Application method of semiconductor equipment

Abstract

The invention provides a use method of semiconductor equipment. The use method comprises the following steps: placing a substrate on a tray of a carrying table; the transition cavity is vacuumized until the transition cavity enters a vacuum state; the control rod drives the first carrying table and the second carrying table to move along a preset path, so that the substrate sequentially passes through the transition cavity, the conveying cavity, the cleaning cavity, the preheating cavity and the growth cavity, and coating of the substrate is completed; the substrate is placed on the second carrying table, the control rod drives the second carrying table to move in the direction opposite to the preset path till the second carrying table makes contact with the cooling plate, and therefore the second carrying table and the substrate are cooled; and the control rod drives the second carrying table to move until the distance between the second carrying table and the cooling plate reaches the preset distance, and then vacuum breaking treatment is conducted on the transition cavity. And when the substrate is coated with the film, the relative temperature is 0.3-0.7. According to the invention, the uniformity of film coating can be improved.

Description

[0001] This patent is a divisional application of patent number 201910895152.5, application date September 20, 2019, and invention name “A semiconductor device”. Technical Field

[0002] The present invention relates to the field of semiconductors, and in particular to a method for using a semiconductor device. Background Art

[0003] With the continuous advancement of integrated circuit production technology, the integration of circuit chips has been greatly improved. At present, the number of transistors integrated in a chip has reached an astonishing tens of millions. The signal integration of such a large number of active components requires more than ten layers of high-density metal interconnection layers for connection. Therefore, as an important process for preparing the above-mentioned metal interconnection layer, physical vapor deposition (PVD) technology has been widely used.

[0004] In the magnetron sputtering equipment, electrons are accelerated to fly toward the substrate under the action of the electric field. In the process, they collide with argon atoms, ionize a large number of argon ions and electrons, and form a plasma area between the target material and the substrate. Argon ions are accelerated to bombard the target material under the action of the electric field, sputtering a large number of target atoms or molecules, and the neutral target atoms or molecules are deposited on the substrate to form a film. In order to form more argon ions to bombard the target material to produce more target atoms or molecules, it is necessary to increase the collision rate between electrons and argon atoms. By using the magnetic field formed near the target material, the electrons are affected by the Lorentz magnetic force of the magnetic field and are bound in the plasma area close to the target material, moving around the target material, increasing the movement path of the electrons, thereby increasing the collision rate between electrons and argon atoms. The large number of ionized argon ions can bombard more target atoms or molecules. However, the uniformity of the film after direct sputtering is poor, so that subsequent processing is required in the next process. The process is cumbersome and not suitable for the production of large-size wafers. Summary of the invention

[0005] In view of the above-mentioned defects of the prior art, the present invention provides a semiconductor device to improve the uniformity of the coating and simplify the operation process.

[0006] To achieve the above and other purposes, the present invention provides a method for using a semiconductor device, comprising:

[0007] The carrier is arranged in a transition chamber, the transition chamber is arranged before the growth chamber, the carrier is divided into a first carrier and a second carrier, and before the vacuum treatment, the substrate is placed on a tray of the first carrier;

[0008] Performing a vacuum treatment on the transition cavity until the transition cavity enters a vacuum state, wherein a vacuum port and an exhaust port are provided on one side of the transition cavity;

[0009] The control rod drives the first stage and the second stage to move along a preset path, so that the substrate passes through the transition chamber, the transfer chamber, the cleaning chamber, the preheating chamber and the growth chamber in sequence to complete the coating of the substrate;

[0010] After the coating is completed, the substrate is moved to the tray of the second stage of the transition chamber;

[0011] The control rod drives the second stage to move in a direction opposite to the preset path until the control rod drives the second stage to contact the cooling plate to cool the second stage and the substrate;

[0012] Before the vacuum breaking process, the control rod drives the second carrier to move until the distance between the second carrier and the cooling plate reaches a preset distance, and then the transition cavity is subjected to the vacuum breaking process;

[0013] When the substrate is completely coated, the relative temperature is 0.3-0.7, and the relative temperature is the ratio of the substrate temperature to the melting temperature of the film.

[0014] In one embodiment, the thin film of the substrate has a columnar crystal structure.

[0015] In one embodiment, the relative humidity is 0.3-0.5.

[0016] In one embodiment, a target is rotatably provided at the top of the growth chamber, a magnet is provided above the target, the magnet is an arc-shaped structure or a rectangular structure, the magnet is connected to a driving mechanism, and the driving mechanism drives the magnet to rotate and reciprocate up and down.

[0017] In one embodiment, the magnet rotates around the central axis of the target, and the rotation speed of the magnet and the target is different.

[0018] In one embodiment, a control unit is further included, wherein the control unit is used to drive the susceptor to rise during the magnetron sputtering process to keep the distance between the target material and the susceptor unchanged.

[0019] In one embodiment, the first carrier and the second carrier are connected to a support plate, the support plate is connected to a control rod, one end of the control rod is located outside the transition cavity, and the control rod drives the support plate to rise and / or fall.

[0020] In one embodiment, the middle portion of the base is raised relative to the edge, the substrate is arranged on the middle portion of the base, a portion of the substrate covers the edge area and is spaced apart from the edge area, and at the edge of the substrate, there is no direct contact between the base and the substrate.

[0021] In one embodiment, two air inlets are arranged on the side wall of the growth chamber, the two air inlets are staggered with each other, and the two air inlets are respectively connected to an air inlet pipe.

[0022] In one embodiment, the cooling plate is fixed to the transition cavity via a plurality of brackets.

[0023] The present invention provides a semiconductor device, by which a thin film formed is of high quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 : A brief schematic diagram of the growth chamber proposed in this embodiment.

[0025] Figure 2 : Another brief schematic diagram of the base in this embodiment.

[0026] Figure 3 : Schematic diagram of the back side of the base in this embodiment.

[0027] Figure 4 : A brief schematic diagram of the heater in this embodiment.

[0028] Figure 5 : Another brief schematic diagram of the heater in this embodiment.

[0029] Figure 6 : A brief schematic diagram of the temperature measuring device in this embodiment.

[0030] Figure 7 : A brief schematic diagram of the magnet in this embodiment.

[0031] Figure 8 : Another brief schematic diagram of the magnet in this embodiment.

[0032] Fig. 9 : Another brief schematic diagram of the magnet in this embodiment.

[0033] Fig.10 : A brief schematic diagram of the reflector in this embodiment.

[0034] Fig.11 : A brief schematic diagram of the clamp in this embodiment.

[0035] Fig.12 : A brief schematic diagram of the cooling device in this embodiment.

[0036] Fig.13 : A brief schematic diagram of the air inlet in this embodiment.

[0037] Fig.14 : A brief schematic diagram of the air intake duct in this embodiment.

[0038] Fig.15 : A brief schematic diagram of the bottom of the air intake duct in this embodiment.

[0039] Fig.16 : Another simplified schematic diagram of the air inlet in this embodiment.

[0040] Fig.17 : Another simplified schematic diagram of the air inlet in this embodiment.

[0041] Fig.18 : Another simplified schematic diagram of the air inlet in this embodiment.

[0042] Fig.19 : Another simplified schematic diagram of the air inlet in this embodiment.

[0043] Fig. 20 : A brief schematic diagram of the semiconductor device proposed in this embodiment.

[0044] Fig.21 : A brief schematic diagram of the transition cavity in this embodiment.

[0045] Fig. 22 : A brief schematic diagram of the cooling plate in this embodiment.

[0046] Fig.23 : A brief schematic diagram of the base in this embodiment.

[0047] Fig.24 : A brief schematic diagram of the carrier and tray in this embodiment.

[0048] Fig.25 : A brief schematic diagram of the cleaning chamber in this embodiment.

[0049] Fig.26 : A brief schematic diagram of the lifting and rotating mechanism in this embodiment.

[0050] Fig. 27 : Another simplified schematic diagram of the cleaning chamber in this embodiment.

[0051] Fig.28 : A brief schematic diagram of the bushing and coil assembly in this embodiment.

[0052] Fig.29 : A brief schematic diagram of the preheating chamber in this embodiment.

[0053] Fig.30 : A brief schematic diagram of the heater in this embodiment.

[0054] Fig.31 : A brief schematic diagram of the heating coil in this embodiment.

[0055] Fig.32 : A brief schematic diagram of the temperature measuring points in this embodiment.

[0056] Fig.33 : Flowchart of the method of using the semiconductor device in this embodiment.

[0057] Fig.34 : Analysis diagram of aluminum nitride coating in this embodiment.

[0058] Fig.35 : SEM image of the aluminum nitride film in this embodiment.

[0059] Fig.36 : The rocking curve diagram of the aluminum nitride film in this embodiment. DETAILED DESCRIPTION

[0060] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0061] It should be noted that the illustrations provided in this embodiment are only used to schematically illustrate the basic concept of the present invention. Therefore, the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0062] The following description sets forth many specific details, such as process chamber configurations and material systems, to provide a thorough understanding of the embodiments of the present invention. It will be apparent to those skilled in the art that embodiments of the present invention may be implemented without these specific details. In other cases, well-known features such as specific diode configurations are not described in detail to avoid obscuring the embodiments of the present invention. In addition, it should be understood that the various embodiments shown in the figures are exemplary illustrations and are not necessarily drawn to scale. In addition, other arrangements and configurations may not be explicitly disclosed in the embodiments herein, but the other arrangements and configurations are still considered to be within the spirit and scope of the present invention.

[0063] See also Figure 1The present embodiment provides a semiconductor device 100, which includes a growth chamber 110, a pedestal 111, a target 123 and a magnet 122. The pedestal 111 is disposed in the growth chamber 110. The pedestal 111 can be disposed at the bottom of the growth chamber 110. A plurality of substrates 112 can be placed on the front of the pedestal 111, for example, four or six or more or less substrates 112 can be placed. In the present embodiment, one substrate 112 is disposed on the pedestal 111. In some embodiments, the diameter of the pedestal 111 ranges from 200 mm to 800 mm, for example, from 400 mm to 600 mm. In some embodiments, the size of the pedestal 111 ranges from 2 to 12 inches, for example, from 4 inches, 6 inches, 8 inches, 10 inches, 12 inches or other sizes. The pedestal 111 can be formed of a variety of materials, including silicon carbide or graphite coated with silicon carbide. In some embodiments, the base 111 includes a silicon carbide material and has a surface area of ​​2000 square centimeters or more, for example, 5000 square centimeters or more, and for example, 6000 square centimeters or more. In this embodiment, the substrate 112 may include sapphire, silicon carbide, silicon, gallium nitride, diamond, lithium aluminate, zinc oxide, tungsten, copper and / or aluminum gallium nitride, and the substrate 112 may also be, for example, soda-lime glass and / or high silica glass. In general, the substrate 112 may be composed of the following: a material with a compatible lattice constant and thermal expansion coefficient, a substrate compatible with the III-V group material grown thereon, or a substrate that is thermally stable and chemically stable at the III-V growth temperature. The size of the substrate 112 may range from 50 mm to 100 mm (or larger) in diameter. In some embodiments, the size of the substrate 112 is, for example, 2-12 inches, for example, 4 inches, 6 inches, 8 inches, 10 inches, 12 inches or other sizes. In the present embodiment, the substrate 112 is, for example, a silicon substrate, and a metal compound film can be formed on the silicon substrate, for example, an aluminum nitride film or a gallium nitride film, for example, an aluminum nitride film with a (002) orientation. The base 111 is also connected to a driving unit 113, and the driving unit 113 is connected to a control unit (not shown). The driving unit 113 is used to drive the base 111 to rise or fall. The driving unit 113 can use a driving device such as a servo motor or a stepping motor. The control unit is used to control the driving unit 113 to drive the base 111 to rise during magnetron sputtering, so that the distance between the target 123 and the base 111 always remains at a predetermined value. The predetermined value can be set to an optimal value for obtaining ideal film uniformity, deposition rate, and other process results according to specific needs. Therefore, by controlling the driving unit 113 to drive the base 111 to rise during magnetron sputtering with the help of the control unit, so that the target-base distance always remains at an optimal value, the film uniformity and deposition rate can be improved, and then the process quality can be improved. The control unit can use a host computer or a PLC.In some embodiments, the susceptor 111 may be further connected to a rotating unit, and the rotating unit is used to rotate the susceptor 111 during film deposition to further improve the thickness uniformity of the coated film and improve the stress uniformity of the coated film.

[0064] It is worth noting that, in some embodiments, the semiconductor device 100 may further include, for example, a load lock chamber, a carrier box, and an optionally additional MOCVD reaction chamber (not shown) for a large number of applications.

[0065] In some embodiments, the choice of substrate includes, but is not limited to, sapphire, SiC, Si, diamond, LiAlO2, ZnO, W, Cu, GaN, AlGaN, AlN, soda lime / high silica glass, substrates with matching lattice constants and thermal expansion coefficients, substrates compatible with the nitride material grown on the substrate or engineered according to the nitride material grown on the substrate, substrates that are thermally and chemically stable at the required nitride growth temperature, and unpatterned or patterned substrates. In some embodiments, the choice of target includes, but is not limited to, Al-containing metals, alloys, compounds, such as Al, AlN, AlGa, Al2O3, etc., and the target can be doped with II / IV / VI group elements to improve layer compatibility and device performance. In one embodiment, the sputtering process gas may include, but is not limited to, nitrogen-containing gases such as N2, NH3, NO2, NO, etc. and inert gases such as Ar, Ne, Kr, etc.

[0066] In some embodiments, the semiconductor device of the present invention may involve devices and methods for forming high-quality buffer layers and III-V family layers, which can be used to form possible semiconductor components, such as RF components, power components, or other possible components.

[0067] See also Figure 2In some embodiments, the middle portion of the base 111 is convex relative to the edge, and the substrate 112 is disposed on the middle portion of the base 111, so that a portion of the substrate 112 covers the edge region and is spaced apart from the edge region. At the edge of the substrate 112, there is no direct contact between the base 111 and the substrate 112, which is believed to reduce the contact cooling of the substrate 112 by the base 111. The substrate 112 is heated by ion bombardment during the entire deposition process. Since the substrate 112 is in thermal contact with the middle portion of the base 111, the middle portion of the substrate 112 is cooled by the base 111, and the edge of the substrate 112 is not subjected to direct contact cooling and is therefore subjected to a higher temperature. This makes the edge of the film layer more tensile, thereby again playing a role in the overall change of stress on the film layer. In this embodiment, the substrate 112 is, for example, a silicon substrate or a silicon carbide substrate, and a metal compound film, for example, an aluminum nitride film or a gallium nitride film, for example, a (002) oriented aluminum nitride film, can be formed on the silicon substrate or the silicon carbide substrate.

[0068] See also Figure 3-4 , Figure 3 The back side of the base 111 is shown. A heater is arranged on the back side of the base 111, wherein the heater includes a plurality of heating electrodes 126 and a heating coil 127, and a temperature measuring point 128 is also arranged near the heating electrode 126. In this embodiment, a plurality of heating electrodes 126 are connected to a heating coil 127. In this embodiment, a specific design is made for the heating coil 127, for example, the heating coil 127 includes a first part and a second part, the first part and the second part are symmetrically connected about the center of the heating coil 127, wherein the first part includes a first arc edge 127a, a second arc edge 127b and a third arc edge 127c from the outside to the inside, and the first arc edge 127a, the second arc edge 127b and the third arc edge 127c can be concentric circles. One end of the first arc edge 127a is connected to one end of the second arc edge 127b, and the other end of the second arc edge 127b is connected to the third arc edge 127c, and the first part is connected to the second part through the third arc edge 127c, forming a circular heating coil 127. The other end of the first arc edge 127a is connected to the heating electrode 126. After the plurality of heating electrodes 126 are connected to an external power source, the heating coil 127 starts to heat the base 111. In this embodiment, the heating coil 127 can ensure the uniformity of heating of the base 111, thereby ensuring the temperature uniformity of the substrate 112. The heating coil 127 can be, for example, arranged on a pyrolytic boron nitride substrate. In some embodiments, in order to further improve the uniformity of heating, the shape and number of turns of the heating coil 127 can be adjusted. In this embodiment, seven heating electrodes 126 are arranged on the back of the base 111. In other embodiments, in order to improve the uniformity of heating, 8 or more heating electrodes 126 can be arranged.

[0069] See also Figure 5 In some embodiments, in order to further improve the heating uniformity of the base 111, the heating coil 127 can be adjusted. For example, the heating coil 127 is formed by bending an enameled wire 127d, and the cross section of the enameled wire 127d can be circular, square or flat. According to actual conditions, the number of windings of the enameled wire 127d can be adjusted, or the heating coil 127 can be set to an asymmetric shape, or the enameled wire can be wound into other shapes.

[0070] See also Figure 3 and Figure 6 In this embodiment, a temperature measuring point 128 is also provided near the heating electrode 126. The temperature measuring point 128 is connected to a temperature measuring device. In this embodiment, the temperature measuring device includes a detection circuit 129a and a temperature acquisition module 129b connected in sequence. The detection circuit 129a is composed of two conductors of different materials. One end (working end) of the detection circuit 129a contacts the temperature measuring point 128 to generate a thermoelectric signal. The temperature acquisition module 129b is used to receive the thermoelectric signal through the first detection point and the second detection point at the other end (free end) of the detection circuit 129a, and calculate the temperature of the temperature measuring point 128 according to the thermoelectric signal. Since the detection circuit 129a is composed of two conductors of different materials, the thermoelectric signal will affect the potential difference between the first detection point and the second detection point. The temperature acquisition module 129b calculates the temperature of the temperature measuring point 128 by calculating the potential difference between the first detection point and the second detection point. In this embodiment, the temperature measuring device can be, for example, a thermocouple. In some embodiments, other thermometers may be used to measure the temperature on the base 111, for example, an infrared thermometer may be used to measure the temperature on the base 111. In this embodiment, the temperature conditions at various positions of the base 111 can be known in real time through the temperature measuring device, which can ensure that the temperature on the base 111 is in a uniform and stable state, and at the same time, it can also ensure that the substrate 112 on the base 111 is in a uniform and stable temperature environment.

[0071] See also Figure 1In this embodiment, the target 123 is disposed at the top of the growth chamber 110. The target 123 is electrically connected to a sputtering power source (not shown). During magnetron sputtering, the sputtering power source outputs sputtering power to the target 123 so that the plasma formed in the growth chamber 110 etches the target 123. The sputtering power source may include a DC power source, an intermediate frequency power source, or an RF power source. The target 123 has at least one surface portion composed of a material to be sputter-deposited on a substrate 112 disposed on a base 111. In some embodiments, when, for example, an aluminum nitride film is formed, a substantially pure aluminum target may be used to form an AlN-containing buffer layer, and the pure aluminum target may be sputtered using a plasma including an inert gas (e.g., argon) and a nitrogen-containing gas. In some embodiments, after one or more epitaxially ready substrates 112 are loaded into the growth chamber 110, a continuous AlN film is deposited on the substrate 112 using an aluminum-containing target and a nitrogen-containing process gas. In some embodiments, the target 123 may be formed of a material selected from, but not limited to, the group consisting of substantially pure aluminum, aluminum-containing alloys, aluminum-containing compounds (e.g., AlN, AlGa, Al2O3), and aluminum-containing targets doped with Group II / IV / VI elements to improve layer compatibility and device performance. Process gases used during the sputtering process may include, but are not limited to, nitrogen-containing gases such as nitrogen (N2), ammonia (NH3), nitrogen dioxide (NO2), nitrogen oxide (NO), etc., and inert gases such as argon (Ar), neon (Ne), krypton (Kr), etc. In some embodiments, dopant atoms may be added to the deposited film by doping the target material and / or delivering the dopant gas to the generated sputtering plasma to adjust the electrical, mechanical, and optical properties of the deposited PVD AlN buffer layer, for example, to make the film suitable for fabricating a Group III nitride device thereon. In some embodiments, the film (e.g., AlN buffer layer) formed in the growth chamber 110 has a thickness between 0.1-1000 nanometers.

[0072] See also Figure 1In this embodiment, the magnet 122 is located above the target 123, and the magnet 122 rotates around the central axis of the target 123, for example, the magnet 122 rotates around the central axis of the target 123 by 90°, 180°, 360° or any other angle, or the magnet 122 can rotate around the central axis of the target 123 at any angle. In this embodiment, the magnet 122 is connected to a driving mechanism, and the driving mechanism drives the magnet 122 to rotate and reciprocate up and down. The driving mechanism includes a first motor 114, a transmission rod 115, a second motor 116 and a lifting assembly. The first motor 114 is connected to the second motor 116 via a transmission rod 115. The first motor 114 is, for example, a servo motor or a stepper motor. The transmission rod 115 is, for example, a screw. The second motor 116 is, for example, a rotary servo motor. Thus, the first motor 114 can drive the second motor 116 to reciprocate up and down via the transmission rod 115. The first motor 114 drives the transmission rod 115 to rotate forward or reversely to make the second motor 116 reciprocate. In this embodiment, the lifting assembly includes an outer shaft 118 and an inner shaft 119. The inner shaft 119 is arranged in the outer shaft 118. The inner shaft 119 is allowed to move along the outer shaft 118. At the same time, the outer shaft 118 is arranged on the growth chamber 110, and part of the inner shaft 119 is arranged in the growth chamber 110. A fixing device 121 is also provided on one end of the inner shaft 119, and the magnet 122 is fixed to one end of the inner shaft 119 through the fixing device 121. At the same time, a sealing device 120 is also provided around the outer shaft 118 in contact with the growth chamber 110, and a vacuum seal is achieved by the sealing device 120. The sealing device 120 can be, for example, a sealing ring. In this embodiment, the second motor 116 is connected to the inner shaft 119 through the output shaft 117, and the output shaft 117 is partially located in the outer shaft 118. The second motor 116 can drive the inner shaft 119 to rotate through the output shaft 117, and the first motor 114 drives the second motor 116 to reciprocate up and down through the transmission rod 115. Therefore, when the first motor 114 and the second motor 116 are turned on at the same time, the inner shaft 119 can be rotated while reciprocating up and down, so that the magnet 122 on the inner shaft 119 can also be driven to move accordingly. When the first motor 114 is turned on and the second motor 116 is turned off, the inner shaft 119 can only reciprocate up and down. When the first motor 114 is turned off and the second motor 116 is turned on, the inner shaft 119 can only rotate. Thus, the staff can choose to turn on and / or turn off the first motor 114 and / or the second motor 116 according to the implementation situation.

[0073] In some implementations, when the magnet 122 is rotating, the target 123 can remain stationary or rotate around its own central axis, but there is a speed difference between the target 123 and the magnet 122. When the magnet 122 is rotating, the target 123 can be driven to rotate around its own central axis by a power source such as a motor, so that there is a speed difference between the target 123 and the magnet 122. The relative movement of the target 123 and the magnet 122 can make the magnetic field generated by the magnet 122 evenly scan the sputtering surface of the target 123, and because the electric field and the magnetic field uniformly distributed on the sputtering surface of the target 123 act on the secondary electrons at the same time in this embodiment, the movement trajectory of the secondary electrons can be adjusted to increase the number of collisions between the secondary electrons and the argon atoms, so that the argon atoms near the sputtering surface of the target 123 are fully ionized to generate more argon ions; and by bombarding the target 123 with more argon ions, the sputtering utilization rate and sputtering uniformity of the target 123 can be effectively improved, and the quality and uniformity of the deposited film can be further improved.

[0074] See also Figure 7In this embodiment, the magnet 122 includes a first part, a second part and a plurality of third parts, and the plurality of third parts are connected between the first part and the second part. The first part includes a first magnetic unit 1221, the second part includes a second magnetic unit 1222, a third magnetic unit 1223 and a fourth magnetic unit 1224, and the third part includes a fifth magnetic unit 1225, a sixth magnetic unit 1226 and a seventh magnetic unit 1227. In this embodiment, both ends of the first part are respectively connected to one end of the third part, specifically, both ends of the first magnetic unit 1221 are connected to the third part, and more specifically, both ends of the first magnetic unit 1221 are respectively connected to the fifth magnetic unit 1225. The two ends of the second part are respectively connected to the other end of the third part, wherein the two ends of the fourth magnetic unit 1224 of the second part are connected to one end of the third magnetic unit 1223, and the other end of the third magnetic unit 1223 is connected to the second magnetic unit 1222, and the third magnetic unit 1223 is tilted between the second magnetic unit 1222 and the fourth magnetic unit 1224, so that the fourth magnetic unit 1224 is recessed inward to form a recess. It should be noted that the second part can be a symmetrical structure, that is, the second magnetic unit 1222 and the third magnetic unit 1223 are symmetrical about the center of the fourth magnetic unit 1224, and further, the length of the second part is greater than the length of the first part. The third part includes a fifth magnetic unit 1225, a sixth magnetic unit 1226 and a seventh magnetic unit 1227 connected in sequence, the fifth magnetic unit 1225 is also connected to the first magnetic unit 1221, and the seventh magnetic unit 1227 is also connected to the second magnetic unit 1222. At the same time, the slopes of the fifth magnetic unit 1225, the sixth magnetic unit 1226 and the seventh magnetic unit 1227 become larger in sequence, that is, the slope of the seventh magnetic unit 1227 is greater than the slope of the sixth magnetic unit 1226, and the slope of the sixth magnetic unit 1226 is greater than the slope of the fifth magnetic unit 1225. It should be noted that the multiple third parts are symmetrical about the central axis of the first part and the second part. In this embodiment, a plurality of magnetic units are spliced ​​into a symmetrical annular magnet 122, and an arc-shaped magnetic field can be formed when the magnet 122 is stationary, and a uniform magnetic field can be formed when the magnet 122 rotates around the target material 123. The uniform magnetic field can provide the sputtering uniformity of the target material, thereby achieving the uniformity of the coating.

[0075] See also Figure 8In some embodiments, the magnet 122 may also be an arc-shaped structure, and the magnet 122 includes a first magnetic unit 1221, a second magnetic unit 1222, and a plurality of third magnetic units 1223. The first magnetic unit 1221 is connected to the second magnetic unit 1222 via the third magnetic unit 1223, wherein the first magnetic unit 1221 and the second magnetic unit 1222 are, for example, arc-shaped, and the first magnetic unit 1221 and the second magnetic unit 1222 are of the same arc-shaped structure, and the third magnetic unit 1223 is connected between the first magnetic unit 1221 and the second magnetic unit 1222, and is symmetrical about the central axis of the first magnetic unit 1221 and the second magnetic unit 1222. When the magnet 122 is stationary, an arc-shaped magnetic field may be formed, and when the magnet 122 rotates around the target 1223, a uniform magnetic field may be formed. The uniform magnetic field may provide the sputtering uniformity of the target, thereby achieving the uniformity of the coating.

[0076] See also Fig. 9 In some embodiments, the magnet 122 may also be a rectangular structure, and the magnet 122 includes a plurality of first magnetic units 1221 and a plurality of second magnetic units 1222 arranged opposite to each other, wherein the first magnetic unit 1221 is connected to the second magnetic unit 1222, the first magnetic unit 1221 may be an arc-shaped structure, and the first magnetic unit 1221 may be concave inward or outward, and the plurality of first magnetic units 1221 may also be an arc-shaped structure concave inward or outward at the same time, and the plurality of first magnetic units 1221 may also include different arc-shaped structures. The magnet 122 may be a symmetrical structure or an asymmetrical structure, and may form an arc-shaped magnetic field when the magnet 122 is stationary, and may form a uniform magnetic field when the magnet 122 rotates around the target 123. The uniform magnetic field may provide the sputtering uniformity of the target, thereby achieving the uniformity of the coating.

[0077] See also Fig.10In some embodiments, the growth chamber 110 may include an outer wall 110a and an inner wall 110b, wherein the inner wall 110b is disposed inside the outer wall 110a, and the inner wall 110b is fixed inside the outer wall 110a by a plurality of bolts, so that the outer wall 110a and the inner wall 110b form an annular structure, and when the semiconductor device 100 is working, the annular structure can slow down the heat loss. A plurality of reflective plates are also disposed on the inner wall 110b, for example, a first reflective plate 111a and a second reflective plate 111b are disposed sequentially from the inside to the outside of the inner wall 110b, and the first reflective plate 111a and the second reflective plate 111b are sequentially attached. When the deposition operation is performed, the base 112 is in a high temperature state, and the radiant heat can be isolated in time by disposing a plurality of reflective plates on the inner wall 110b to prevent the heat from being lost to the outside. Among them, the first reflective plate 111a and the second reflective plate 111b are disposed on the inner wall 111b in a circular shape. The first reflector 111a can be made of a whole insulation material or a plurality of insulation materials, and the second reflector 111b can be made of a whole insulation material or a plurality of insulation materials. In this embodiment, two layers of reflectors are arranged on the inner wall 110b, and in some embodiments, three or four layers or more or fewer layers of reflectors can be arranged.

[0078] See also Figure 10-11In this embodiment, a plurality of clamps 132 are arranged on the inner wall 111b of the growth chamber 110, and the clamps 132 are used to fix the first reflector 111a and the second reflector 111b. The clamps 132 include a plurality of limiting strips 1321, and two adjacent limiting strips 1321 form a clamping groove 1322. The limiting strip 1321 at one end of the clamps 132 is arranged on the inner wall 110b, and then the first reflector 111a and the second reflector 111b are arranged in the corresponding clamping grooves 1322. In this embodiment, the first reflector 111a and the second reflector 111b are arranged in adjacent clamping grooves 1322. In some embodiments, the first reflector 111a and the second reflector 111b may be arranged in the corresponding clamping grooves 1322 at intervals. The first reflector 111a and the second reflector 111b each include a bent portion (not shown) at both ends, and the bent portions at both ends of the first reflector 111a protrude from the clamping groove 1322, so the first reflector 111a is arranged on the inner wall 110b in a circular shape. In the present embodiment, six clamps 132 are arranged on the inner wall 110b, and the clamps 132 are evenly arranged on the inner wall 110b. In some embodiments, eight or ten or more or less clamps 132 may be arranged on the inner wall 110b. In some embodiments, the first reflector 111a and the second reflector 111b may be arranged on the inner wall 110b by other means, for example, the first reflector 111a and the second reflector 111b are arranged on the inner wall 110b by bonding or fixing with nuts. In this embodiment, through holes 130 of the same size are provided at the same positions of the outer wall 110a, the inner wall 110b, the first reflector 111a and the second reflector 111b. The position of the through hole 130 is higher than the base 111. High temperature resistant transparent material is provided on the through holes 130 of the outer wall 110a and the inner wall 110b. Thus, the staff can understand the growth situation in the growth cavity 110 from the outside of the growth cavity 110. A baffle 131 is also provided on the inner wall 110b. The baffle 131 is provided at the position of the through hole 130. The baffle 131 can completely cover the through hole 131. The baffle 131 is provided on the inner wall 110b through a bracket, and the position of the baffle 131 allows adjustment. After the staff has observed the growth situation in the growth chamber 110, the blocking piece 131 can be set in front of the through hole 130, so that the sputtered ions cannot be deposited on the high temperature resistant transparent material set on the through hole 130 of the outer wall 110a and the inner wall 110b. In some embodiments, the through hole 130 on the outer wall 110a can be larger than the through hole 130 on the inner wall 110b to expand the viewing angle and facilitate viewing of the growth situation in the growth chamber 110.

[0079] See also Fig.12A cooling device 140 is also provided on the outer wall 110b of the growth chamber 110. The cooling device 140 is used to absorb the heat dissipated to the outer wall 110a to prevent the outer wall 110a from deforming due to high temperature. In this embodiment, the cooling device 140 is, for example, a water pipe surrounding the outer wall 110a. One end of the water pipe is a water inlet, and the other end of the water pipe is a water outlet. By forming a circulating water path with the water pipe, the temperature on the outer wall 110a is effectively absorbed. At the same time, when the semiconductor device 100 completes the work, the cooling device 140 can also help the growth chamber 110 to cool faster and improve efficiency.

[0080] See also Figure 1 and Figure 13-14In this embodiment, the growth chamber 110 includes at least one air inlet, which is connected to an external air source 124, and the external air source 124 delivers gas into the growth chamber 110 through the air inlet. The growth chamber 110 includes at least one air extraction port, which is connected to a vacuum pump 125, and the vacuum pump 125 performs a vacuum process on the growth chamber 110 through the air extraction port. In some embodiments, the growth chamber 110 includes at least two air inlets, for example, a first air inlet 119a and a second air inlet 119b, the first air inlet 119a and the second air inlet 119b are respectively arranged on opposite sides of the growth chamber 110, the first air inlet 119a and the second air inlet 119b are staggered with each other, and gas can be input into the growth chamber 110 through the first air inlet 119a and the second air inlet 119b. In this embodiment, the first air inlet 119a and the second air inlet 119b are respectively connected to an air inlet pipe 200, and the air inlet pipe 200 includes an outer sleeve 210 and an inner sleeve 220. The inner sleeve 220 is arranged in parallel in the outer sleeve 210, and one end of the inner sleeve 220 can be connected to one end of the outer sleeve 210 to form a closed annular cavity. One end of the air inlet pipe 200 is connected to the air inlet, and the other end of the air inlet pipe 200 can contact the inner wall of the growth chamber 110 or the other end of the air inlet pipe 200 has a certain gap with the inner wall of the growth chamber 110. The outer sleeve 210 includes a plurality of first exhaust holes 211, and the inner sleeve 210 includes a plurality of second exhaust holes 221. The plurality of first exhaust holes 211 are evenly arranged on the outer sleeve 210, and the plurality of second exhaust holes 221 are evenly arranged on the inner sleeve 220, wherein the size of the second exhaust holes 221 is greater than or equal to the size of the first exhaust holes 211, so the first exhaust holes 211 and the second exhaust holes 221 can be staggered or partially overlapped or overlapped. In this embodiment, the size of the first exhaust hole 211 is smaller than the size of the second exhaust hole 221, and the first exhaust hole 211 and the second exhaust hole 221 are staggered, and the first exhaust hole 211 and the second exhaust hole 221 are, for example, circular, rectangular, triangular, or a combination thereof. The external airflow first enters the inner sleeve 220, then enters the annular cavity through the second exhaust hole 221 on the inner sleeve 220, and then enters the growth chamber 110 more evenly through the first exhaust hole 211 on the outer sleeve 210. In this way, the flow rate of the airflow entering the growth chamber 110 can be greatly slowed down and will not be turbulent, thereby greatly reducing the vibration of equipment and products caused by the impact of the airflow, avoiding equipment defects and product damage. At the same time, the airflow entering the growth chamber 110 is uniform, which can also improve the uniformity of the coating.

[0081] See also Fig.14In this embodiment, the air inlet pipe 200 is connected to the air inlet through a branch pipe 230. One end of the branch pipe 230 is fixed to the air inlet, and the other end of the branch pipe 230 is connected to the outer sleeve 210. An exhaust pipe 240 is also arranged on the outer wall of the growth chamber 110. The exhaust pipe 240 and the outer wall of the growth chamber 110 are kept in a sealed state. The exhaust pipe 240 is arranged on the air inlet, and the exhaust pipe 240 is also connected to an external gas source 250. The gas is transported to the branch pipe 230 through the exhaust pipe 240 through the external gas source 250. When the gas enters the inner sleeve 220, it enters the outer sleeve 210 through the multiple second exhaust holes 221 on the inner sleeve 220, and then enters the growth chamber 110 through the multiple first exhaust holes 211 on the outer sleeve 210. In this way, the flow rate of the airflow entering the growth chamber 110 can be greatly reduced and will not be turbulent, thereby greatly reducing the vibration of the equipment and products caused by the impact of the airflow, avoiding the phenomenon of equipment damage and product damage. At the same time, the airflow entering the growth chamber 110 is uniform, which can also improve the uniformity of the coating. In some embodiments, an airflow regulator can also be set on the branch pipe 230 or the exhaust pipe 240, and the airflow regulator can be used to adjust the gas flow rate in the air intake pipe 200.

[0082] See also Fig.15 In some embodiments, there is a certain gap between the bottom of the inner sleeve 220 and the bottom of the outer sleeve 210, and the gap is, for example, 2-3 mm. A plurality of second exhaust holes 221 are provided on the bottom of the inner sleeve 220, and a plurality of first exhaust holes 211 are provided on the bottom of the outer sleeve 210. At the same time, the diameter of the second exhaust holes 221 is greater than the diameter of the first exhaust holes 211, so the relative density of the first exhaust holes 211 is greater than the relative density of the second exhaust holes 221, and at the same time, the first exhaust holes 211 and the second exhaust holes 221 are staggered or overlapped or partially overlapped with each other. In this embodiment, a plurality of through holes are provided on one end of the air inlet pipe 200, which can further improve the uniformity of the airflow entering the growth chamber 110.

[0083] See also Fig.16 In some embodiments, four air inlets are provided on the side wall of the growth chamber 110, namely, a first air inlet 119a, a second air inlet 119b, a third air inlet 119c and a fourth air inlet 119d. The four air inlets are respectively connected to an air inlet pipe 200, and gas is input into the growth chamber 110 through the four air inlets, thereby improving the uniformity of the gas in the growth chamber 110, thereby improving the uniformity of the coating.

[0084] See also Fig.17In some embodiments, two air inlets are provided on the side wall of the growth chamber 110, namely, a first air inlet 119a and a second air inlet 119b. The first air inlet 119a and the second air inlet 119b are staggered with each other. An air inlet pipe 200 is connected to the first air inlet 119a and the second air inlet 119b respectively, and the air inlet pipe 200 includes a plurality of exhaust holes 201 so that the gas becomes more uniform after entering the growth chamber 110. The diameters of the air inlet pipes 200 connected to the first air inlet 119a and the second air inlet 119b can be the same or different so as to adjust the flow rate of the gas.

[0085] See also Fig.18 In some embodiments, an air inlet 119a is provided on the side wall of the growth chamber 110, and an air inlet pipe 200 is connected to the first air inlet 119a. The air inlet pipe 200 includes a plurality of exhaust holes 201, and the diameters of the plurality of exhaust holes 201 may be the same or different so as to adjust the flow rate of the gas.

[0086] See also Fig.19 In some embodiments, a plurality of air inlets are provided at the top of the growth chamber 110, namely, a first air inlet 119a and a second air inlet 119b. The first air inlet 119a and the second air inlet 119b are respectively connected to an air inlet pipe 200, which is located above the target 112. The air inlet pipe 200 includes a plurality of exhaust holes 201, so that the gas becomes more uniform after entering the growth chamber 110, thereby improving the sputtering uniformity of the target 112 and the utilization rate of the target 112, so as to improve the uniformity of the coating. The diameters of the air inlet pipes 200 connected to the first air inlet 119a and the second air inlet 119b can be the same or different, so as to adjust the flow rate of the gas.

[0087] See also Fig. 20 The present embodiment further provides a semiconductor device 300 , which includes a transfer chamber 310 , a transition chamber 320 , a cleaning chamber 330 , a preheating chamber 340 and a plurality of growth chambers 350 .

[0088] In some embodiments of the present invention, appropriate control of the multi-chamber processing platform can be provided by a controller. The controller can be one of any form of general-purpose data processing system, and the controller can be used in industrial settings to control various sub-processors and sub-controllers. Typically, the controller includes a central processing unit (CPU), which communicates with memory and input / output (I / O) circuits among other shared elements. As an example, the controller may perform or otherwise initialize one or more operations of the operation of any method / process described herein. Any computer program code that performs and / or initializes these operations can be expressed as a computer program product. Each computer program product described herein can be run by a computer-readable medium (e.g., a floppy disk, a compact disk, a DVD, a hard drive, a random access memory, etc.).

[0089] See also Fig. 20 In this embodiment, the transfer chamber 310 includes a substrate handling robot 311, which can be operated to transfer substrates between the transition chamber 320 and the growth chamber 350. More specifically, the substrate handling robot 311 can have dual substrate handling blades suitable for simultaneously transferring two substrates from one chamber to another chamber. The substrates can be transferred between the transfer chamber 310 and the dual growth chamber 350 via a slit valve 312. The movement of the substrate handling robot 311 can be controlled by a motor drive system (not shown), and the motor drive system can include a servo motor or a stepper motor.

[0090] See also Fig. 20 In some embodiments, the semiconductor device further includes a manufacturing interface 313, which includes a cassette and a substrate loading and unloading robot (not shown). The cassette contains substrates to be processed, and the substrate loading and unloading robot may include a substrate planning system to load the substrates in the cassette into the transition chamber 320, specifically, placing the substrates on a tray of a carrier.

[0091] See also Fig.21 In this embodiment, the transition chamber 320 is connected to the transmission chamber 310, wherein the transition chamber 320 is located between the manufacturing interface 313 and the transmission chamber 310. The transition chamber 320 provides a vacuum interface between the manufacturing interface 313 and the transmission chamber 310.

[0092] See also Fig.21 The transition chamber 320 includes a shell 320a, which is, for example, a sealed cylinder. A suction port and an exhaust port are provided on the side wall of the shell 320a.

[0093] See also Fig.21In this embodiment, a cooling plate 322 is provided in the transition cavity 320, and the cooling plate 322 is fixed to the bottom of the housing 320a by a plurality of brackets 321. The substrate can be cooled by the cooling plate 322. In this embodiment, the cooling plate 322 can be, for example, cylindrical, rectangular or other shapes, and the cooling plate 322 can be fixed in the housing 320a by, for example, four brackets 321.

[0094] See also Fig. 22 In this embodiment, the cooling plate 322 is cylindrical and includes a plurality of internal thread holes 322a, for example, four internal thread holes 322a. Corresponding external threads are provided at both ends of the bracket 321, so that one end of the bracket 321 can be set in the internal thread hole 322a.

[0095] See also Fig.23 In this embodiment, the other end of the bracket 321 is fixed in the housing 320a through the base 3211. The base 3211 includes a plurality of first threaded holes 3211a and a second threaded hole 3211b, wherein the second threaded hole 3211b is located at the center of the base 3211, and the plurality of first threaded holes 3211a are evenly arranged around the second threaded hole 3211b. The other end of the bracket 321 is arranged in the second threaded hole 3211b, and the plurality of first threaded holes 3211a are used to place a plurality of nuts, thereby fixing the base 3211 in the housing 320a. In this embodiment, six first threaded holes 3211a are included on the base 3211. In some embodiments, four or more first threaded holes 3211a may be arranged on the base 3211.

[0096] See also Fig.21 In this embodiment, at least one platform is provided in the housing 320a, for example, two platforms are provided, for example, a first platform 325 and a second platform 328. The first platform 325 and the second platform 328 are fixed on the support plate 323, and the first platform 325 is located on the second platform 328. The support plate 323 includes a main rod and two side plates, the two side plates are respectively arranged at the two ends of the main rod, and the first platform 325 and the second platform 328 are arranged between the two side plates. In this embodiment, the support plate 323 is also connected to a control rod 324, specifically, the control rod 324 is connected to the main rod of the support plate 323, and one end of the control rod 324 is also located outside the housing 320a, and the control rod 324 can drive the support plate 114 to rise and / or fall. In this embodiment, the control rod 324 is connected to a driving unit (not shown), and the driving unit is used to control the control rod 324 to rise and / or fall. When the driving unit controls the control rod 324 to descend, the second stage 328 may contact the cooling plate 322 .

[0097] See also Fig.24 In this embodiment, at least one tray can be placed on the first stage 325 and the second stage 328, and the tray is used to place the substrate. For example, taking the first stage 325 as an example, one tray 3251 can be placed on the first stage 325, and two or three or more trays 3251 can also be placed. The tray 3251 can be formed of a variety of materials, including silicon carbide or graphite coated with silicon carbide. At least one substrate can be set on the tray 3251, and the substrate can include sapphire, silicon carbide, silicon, gallium nitride, diamond, lithium aluminate, zinc oxide, tungsten, copper and / or aluminum gallium nitride. The substrate can also be, for example, soda-lime glass and / or high-silicon glass. In general, the substrate may be composed of the following: a material with a compatible lattice constant and thermal expansion coefficient, a substrate compatible with the III-V group material grown thereon, or a substrate that is thermally stable and chemically stable at the III-V growth temperature. In this embodiment, the substrate is, for example, a silicon substrate or a silicon carbide substrate, and a metal nitride film, for example, an aluminum nitride film or a gallium nitride film, for example, an aluminum nitride film with a (002) orientation, can be formed on the silicon substrate or the silicon carbide substrate. When the substrate is placed in the transition chamber 320, the substrate is placed on the first stage 325, and when the substrate completes all corresponding processes, the substrate is placed on the second stage 328.

[0098] In some embodiments, a carrier can be set in the transition chamber 320, and at least one substrate can be set on the carrier. The substrate can be placed in the growth chamber by the carrier rising. When the substrate completes all corresponding processes, the substrate is placed on the carrier and descends to the cooling plate 322 through the carrier to cool the substrate.

[0099] See also Fig.21 In this embodiment, the transition chamber 320 further includes an air extraction port, which is connected to a vacuum pump 327, and the transition chamber 320 is evacuated by the vacuum pump 327. In this embodiment, the vacuuming process is implemented through multiple steps, for example, a dry pump is used to evacuate the transition chamber 320 to 1×10 -2 Pa, and then the transition chamber 320 is evacuated to 1×10 -4 Pa or less than 1×10 -4Pa, when the transition chamber 320 enters the vacuum state, the control rod 324 drives the first stage 325 and the second stage 328 to move along a preset path, for example, the control rod 324 drives them to move upward. In this embodiment, the transition chamber 320 is connected to the transfer chamber, and the substrate loading and unloading robot arm in the transfer chamber transfers the substrate from the transition chamber 320 to the transfer chamber, and then the substrate loading and unloading robot arm transfers the substrate to other chambers, such as a preheating chamber, a cleaning chamber or a growth chamber. In the growth chamber, a thin film can be formed on the surface of the substrate, and the material of the thin film can include one or more of aluminum oxide, hafnium oxide, titanium oxide, titanium nitride, aluminum nitride, aluminum gallium nitride or gallium nitride. When the coating work is completed on the substrate, the substrate loading and unloading robot arm in the transfer chamber transfers the substrate to the second stage 328 in the transition chamber 320, and then the control rod 324 drives the first stage 325 and the second stage 328 to move in the direction opposite to the preset path, for example, downward, so that the second stage 328 contacts the cooling plate 322, and the second stage 328 and the substrate on the second stage 328 are cooled by the cooling plate 322. At the same time, a gas outlet is also included on one side of the housing 320a, and the gas outlet is connected to a gas source 326. When the transition chamber 320 is subjected to vacuum breaking, the second stage 328 is first driven away from the cooling plate 322 by the control rod 324, so that there is a preset distance between the second stage 328 and the cooling plate 322, and the preset distance is, for example, 5-10 mm. Then, nitrogen or argon gas is introduced into the transition chamber 320 through the gas source 326 through the gas outlet to break the vacuum of the transition chamber 320, thereby preventing cracks from being generated on the substrate due to the introduction of nitrogen while the substrate is being cooled. After the transition chamber 320 is completely vacuum broken, the substrate can be taken out for storage and analysis.

[0100] It should be noted that when placing the substrate into the transition chamber 320, nitrogen or argon is first introduced into the transition chamber 320 through the exhaust port so that the transition chamber 320 reaches atmospheric pressure balance, or the pressure in the transition chamber 320 is greater than the atmospheric pressure, to avoid contaminants entering the transition chamber 320 due to the negative pressure difference.

[0101] It should be noted that before placing the substrate into the transition chamber 320 , the surface of the substrate needs to be fully cleaned. The size of the substrate can be 2 inches, 4 inches, 6 inches, 8 inches or 12 inches.

[0102] See also Fig. 20In this embodiment, the cleaning chamber 330 is connected to the transfer chamber 310, and the cleaning chamber 330 is located on the side wall of the transfer chamber 310. When the substrate enters the transition chamber 320, the substrate loading and unloading robot 311 in the transfer chamber 310 then transfers the substrate from the transition chamber 320 to the cleaning chamber 330 for cleaning.

[0103] See also Fig.25 A substrate support assembly 331 is disposed in the cleaning chamber 330. The substrate support assembly 331 is disposed at the bottom of the cleaning chamber 330 and does not contact the cleaning chamber 330. The substrate support assembly 331 includes a pedestal electrode 3311 and an electrostatic chuck 3312. The electrostatic chuck 3312 is disposed on the pedestal electrode 3311. The electrostatic chuck 3312 is used to place a substrate. At least one substrate can be placed on the electrostatic chuck 3312. In some embodiments, multiple substrates can be placed on the electrostatic chuck 3312, and multiple substrates can be cleaned at the same time, thereby improving work efficiency.

[0104] See also Fig.25 In this embodiment, the substrate support assembly 331 is further connected to a lifting and rotating mechanism 334. Specifically, the lifting and rotating mechanism 334 is connected to the pedestal electrode 3311. The lifting and rotating mechanism 334 can realize the lifting or rotation of the substrate support assembly 331, and indirectly realize the lifting or rotation of the substrate. When the substrate support assembly 331 rotates up or down, the distance between the substrate and the electrode 332 changes, so as to adjust the electric field strength between the pedestal electrode 3311 and the electrode 332, so that the plasma can better clean the substrate.

[0105] See also Fig.26, the lifting and rotating mechanism 334 includes a lifting mechanism for driving the pedestal electrode 3311 to rise or fall and a rotating mechanism for driving the pedestal electrode 3311 to rotate. Among them, the lifting mechanism includes a lifting motor 3341 and a guide rod 3342. Among them, one end of the guide rod 3341 is arranged in the cleaning chamber 330 and is connected to the pedestal electrode 3311, and the guide rod 3342 and the pedestal electrode 3311 are sealed by a sealing ring 3343. In this embodiment, the output shaft of the lifting motor 3341 is connected to the guide rod 3342, thereby the pedestal electrode 3311 can be driven to rise or fall by the lifting motor 3341. In this embodiment, the rotating mechanism includes a rotating motor 3344, a worm 3345 and a worm wheel 3346. Among them, the output shaft of the rotating motor 3344 is connected to the worm 3345, the worm 3345 is connected to the worm wheel 3346, and the worm wheel 3346 is fixed on the guide rod 3342. The worm wheel 3346 and the worm 3345 are meshingly transmitted. The rotating motor 3344 is, for example, a stepping motor. When the rotating motor 3344 steps once, the pedestal electrode 3311 rotates one supporting position, and a bracket for supporting the rotating mechanism is fixed on the guide rod 3342.

[0106] See also Fig.25 In this embodiment, the cleaning chamber 330 further includes an electrode 332, which is relatively arranged above the substrate support assembly 331, and the electrode 332 does not contact the top of the cleaning chamber 330. In some embodiments, the distance between the electrode 332 and the substrate support assembly 331 can be 2-25 cm, such as 10-20 cm, and 16-18 cm. The electrode 332 is also connected to a lifting and rotating mechanism 333, and the structure of the lifting and rotating mechanism 333 is consistent with that of the lifting and rotating mechanism 334. The lifting and rotating mechanism 333 is not described in this embodiment. When the electrode 332 rotates up or down, the distance between the electrode 332 and the substrate changes to adjust the electric field strength between the electrode 332 and the substrate, so that the plasma can evenly clean the substrate. When the electrode 332 and the substrate support assembly 331 rotate at the same time, the rotation speed of the electrode 332 and the rotation speed of the substrate support assembly 331 can be the same or there is a certain speed difference, so that the plasma can evenly clean the substrate.

[0107] See also Fig.25In this embodiment, the substrate support assembly 331 is also connected to at least one RF bias power supply 338. Specifically, the RF bias power supply 338 is connected to the pedestal electrode 3311. The RF frequency of the RF bias power supply 338 can be high frequency, medium frequency or low frequency. For example, the high frequency can be a 13.56MHZ RF bias source; the medium frequency can be a 2MHZ RF bias source, and the low frequency can be a 300-500KHZ RF bias source. Among them, silicon etching can be performed using high frequency RF; dielectric etching can be performed using medium frequency or low frequency RF. Therefore, RF bias power supplies 338 of different frequencies can be connected to the pedestal electrode 3311 at the same time to achieve simultaneous etching of silicon and dielectric. In this embodiment, the electrode 332 is also connected to at least one RF power supply 337, and the RF frequency of the RF power supply 337 is, for example, 13.56MHZ. The RF power supply 337 and the RF bias power supply 338 are both driven by synchronous pulses and can be switched on and off simultaneously to reduce the electron temperature in the cleaning chamber 330 . The synchronous pulses have good control over the cleaning (etching depth) of densely populated areas of the substrate.

[0108] See also Fig.25In this embodiment, the cleaning chamber 330 further includes a gas inlet, which is close to the electrode 332 and connected to a gas source 335. The gas is delivered into the cleaning chamber 330 through the gas source 335. The gas is a precursor gas for cleaning applications, such as chlorine-containing gas, fluorine-containing gas, iodine-containing gas, bromine-containing gas, nitrogen-containing gas and / or other suitable reactive elements. When the RF power supply 337 and / or the RF bias power supply 338 are started, a plasma is generated near the substrate surface. The generated plasma generally contains free radicals and ions formed by a gas mixture, and the gas mixture includes argon, nitrogen, hydrogen and / or other gases. The generated gas ions and free radicals interact with the substrate surface and / or bombard the substrate surface to remove any substrate surface contamination and particles. In some cases, the plasma is used to modify the surface structure of the substrate to ensure better crystal alignment between the substrate and the deposited epitaxial thin film layer (such as a buffer layer containing AlN). The plasma density, bias voltage and processing time can be adjusted to efficiently process the substrate surface without damaging the substrate surface. In one embodiment, a bias voltage of about -5 volts to -1000 volts is applied to a pedestal electrode 3311 disposed in a substrate support assembly 331 for about 1 second to 15 minutes, and the substrate is disposed on the substrate support assembly 331. The frequency of the power delivered to the processing area of ​​the cleaning chamber 330 can vary from about 10 kilohertz to 100 megahertz, and the power level can be between about 1 kilowatt and 10 kilowatts. In the present embodiment, the cleaning chamber 330 also includes an exhaust port, which is close to the substrate support assembly 331. The exhaust port is connected to a vacuum pump 336. The vacuum pump 336 is used to extract the gas in the cleaning chamber 330 so that the pressure of the cleaning chamber 330 enters a predetermined background vacuum range. The predetermined background vacuum range is, for example, 10 -5 -10 -3 Pa, a precursor gas for cleaning application is mixed and introduced into the cleaning chamber 330, and the exhaust speed of the cleaning chamber 330 is adjusted so that the pressure of the cleaning chamber 330 enters a predetermined working pressure range, and the predetermined working pressure range is, for example, 1Pa-20Pa.

[0109] In some embodiments, the electrostatic chuck 3312 is provided with multiple independent temperature control zones, and the temperature range of each independent temperature control zone is 30°C-150°C. The temperature also affects the cleaning efficiency. Therefore, controlling and adjusting the temperature on the electrostatic chuck 3312 can further improve the cleaning efficiency of the substrate and improve product quality.

[0110] In this embodiment, by cleaning the substrate, surface contamination (e.g., oxides, organic materials, other contaminants) and particles can be removed from the substrate, while also preparing the substrate surface to receive high-quality buffer layers and III-V family layers having a relatively high crystalline orientation in a highly crystalline structure. In one embodiment, cleaning the substrate enables the deposition of high-quality buffer layers and III-V family layers with a surface roughness of less than about 1 nanometer. In addition, it can also allow for a higher uniformity of thin film formation on the substrate.

[0111] See also Fig. 27 This embodiment provides another cleaning chamber, including a reaction chamber 200 , a lower electrode 201 , a bushing 203 , a coil assembly 204 and a radio frequency bias source 206 .

[0112] See also Fig. 27 The reaction chamber 200 has a reaction space in which the generated plasma and other components can be accommodated. The chamber wall of the reaction chamber 200 can be a quartz window 205.

[0113] See also Fig. 27 , the lower electrode 201 is disposed at the bottom of the reaction chamber 200, but does not contact the bottom of the reaction chamber 200. The lower electrode 201 is used to support the substrate 202 to be etched, and the lower electrode 201 is a conductive plate, for example, an iron plate, etc., but is not limited thereto. Further, the lower electrode 201 can be connected to a temperature controller (not shown), and the temperature controller controls the temperature of the lower electrode 201 within the range of 0-100°C, and the substrate 202 can be indirectly controlled to reach the temperature required for the process through the lower electrode 201.

[0114] See also Figure 27-28, the bushing 203 is arranged in the top center area of ​​the reaction chamber 200, that is, the bushing 203 is located on the upper cavity wall of the reaction chamber 200 and does not contact the upper cavity wall. The bushing 203 can be cylindrical, and of course it can also be other shapes as needed. In addition, the bushing 203 is a conductive plate, for example, it can be an iron plate, etc., but it is not limited to this. Further, the bushing 203 is a rotatable bushing, and its rotation axis is perpendicular to the upper wall of the reaction chamber 200. Of course, it can also have a certain angle of deflection. In this embodiment, the position between the bushing 203 and the coil assembly 204 is not fixedly connected, and its relative position changes during the etching process through the rotation of the bushing 203, which will make the etching rate (cleaning rate) of each position on the substrate 202 more balanced. Furthermore, the distance between the bushing 203 and the lower electrode 201 is adjustable, and the distance can be selected in the range of 5 to 25 cm, for example, it can be selected as 5 cm, 10 cm, 15 cm, 20 cm or 25 cm. In this embodiment, the distance between the bushing 203 and the lower electrode 201 is 20 cm. The bushing 203 is a conductive plate, such as an iron plate, but is not limited thereto.

[0115] See also Figure 27-28 The cleaning chamber also includes a coil assembly 204, the surface of which is convex, and the convex coil assembly 204 extends spirally from the bushing, and the curvature of the convex surface is adjustable. The convex coil assembly is used to keep the middle coil away from the reaction chamber, so that the electron temperature in the middle of the reaction chamber can be kept low, thereby more evenly distributing the electron temperature in the middle and on both sides of the reaction chamber. It should be noted that the material of the coil assembly 204 is one of silver, copper, aluminum, gold or platinum. In this embodiment, the coil assembly 204 is temporarily selected as a copper coil.

[0116] See also Fig. 27 The bushing 203 is also connected to a radio frequency power source (not shown in the figure), and the frequency of the radio frequency power source is, for example, 13.56 MHZ. The lower electrode 201 is connected to at least one radio frequency bias source 206, Fig. 27 Only one RF bias source 206 is shown in the figure. The RF frequency of the RF bias source 206 can be a high frequency, a medium frequency or a low frequency. For example, the high frequency can be a 13.56MHZ RF bias source; the medium frequency can be a 2MHZ RF bias source, and the low frequency can be a 400-600KHZ RF bias source. Among them, silicon etching can be performed using high-frequency RF; dielectric etching can be performed using medium-frequency or low-frequency RF. Therefore, RF bias sources 206 of different frequencies can be connected to the lower electrode 201 at the same time to achieve simultaneous etching of silicon and dielectrics. Both the RF power supply and the RF bias source 206 are driven by synchronous pulses and can be switched on and off at the same time to reduce the electron temperature in the reaction chamber 200, and the synchronous pulse has good control over the etching depth (cleaning depth) of dense areas of the substrate 202.

[0117] See also Fig. 20 In this embodiment, the preheating chamber 340 is connected to the transfer chamber 310, and the preheating chamber 340 is located on the side wall of the transfer chamber 310. After the substrate completes the necessary semiconductor process in the preheating chamber 340, the substrate loading and unloading robot 311 in the transfer chamber 310 transfers the substrate to the preheating chamber 340 to preheat the substrate.

[0118] See also Fig.29 The preheating chamber 340 includes a shell 340a, a bracket 341 is provided at the bottom of the shell 340a, and the bracket 341 can be, for example, a hollow structure, and then the wire is placed in the internal structure of the bracket 341, and the wire is connected to the heater 342. In this embodiment, the bracket 341 can be, for example, a high temperature resistant material.

[0119] See also Figure 29-30 In this embodiment, a heater 342 is arranged in the preheating cavity 340, and the heater 342 is fixed on the bracket 341. The heater 342 includes a chassis 3421 and a heating coil 3424. The chassis 3421 includes a plurality of limit bars 3422, and the plurality of limit bars 3422 are distributed in a fan shape on the chassis 3421. A spacer cavity is arranged between two adjacent limit bars 3422, and the spacer cavity can facilitate the heat dissipation of the enameled wire. The plurality of limit bars 3422 and the chassis 3421 can be integrally formed. A plurality of baffles 3423 are also arranged on the plurality of limit bars 3422, and the plurality of baffles 3423 are distributed in a fan shape on the plurality of limit bars to form a concentric circle structure. In this embodiment, a wire slot is formed between two adjacent baffles 3423, and the heating coil 3424 is arranged in the wire slot, and the enameled wire is placed in the wire slot to form the heating coil 3424. In the present embodiment, the enameled wire is a single-layer structure, and the enameled wire winding position of the present embodiment is not concentrated in the same interval cavity, but is randomly wound between adjacent wire slots on any interval cavity. The winding method of the enameled wire is: first wind the first circle, then, through one of the interval cavities, change the winding to the second circle, then through another interval cavity, change the winding to the third circle, and then wind the fourth circle, the fifth circle... in sequence, and the heater described in this embodiment is wound in this way. In some embodiments, the enameled wire can also be a multi-layer structure. In some embodiments, a layer of insulating film can also be wrapped around the enameled wire to prevent the enameled wire from causing short circuits, leakage, circuit board breakdown and other adverse consequences due to paint peeling or uneven paint baking, thereby improving the safety performance of the wire reel and ensuring that the magnetic induction line is more evenly distributed.

[0120] See also Fig.31In this embodiment, the cross section of the heating coil 3424 is circular, and the height of the baffle 3423 is greater than the height of the heating coil 3424. In some embodiments, the heating coil 3424 can also be an enameled wire with a flat cross section. The flat enameled wire can be vertically arranged in the wire slot. When the number and diameter of the enameled wire are constant, the lateral width of the enameled wire bundle with a flat cross section is smaller than that of the enameled wire bundle with a circular cross section. In this way, the winding density between the coils is denser, the magnetic induction intensity of the coil is greatly enhanced, and the heating is more uniform. If the lateral width of the enameled wire bundle becomes smaller when the diameter of the chassis 3421 is constant, the number of turns of the enameled wire can be increased, and the winding method of the heating coil 3424 can be conveniently adjusted.

[0121] See also Fig.32 In this embodiment, a plurality of measuring points are further provided on a surface of the tray 343 close to the substrate 344, and then the plurality of measuring points are connected to a temperature measuring device, which can be arranged in the preheating chamber 340 or arranged outside the preheating chamber 340. The temperature on the substrate 344 can be measured in real time by the temperature measuring device, so that the surface temperature and thermal uniformity of the substrate 344 can be controlled. The temperature measuring device can be, for example, a thermocouple. In other embodiments, the temperature of the substrate 344 can be measured by irradiating an infrared thermometer onto the surface of the substrate 344.

[0122] See also Fig.32 In this embodiment, the heating rate of the heater 334 can be 3-7°C / s, and the heater 342 can heat to 650-1500°C. In this embodiment, the temperature measurement experiment was conducted at 9 positions on the substrate 334, and the data are as follows:

[0123]

[0124] In Table 1, this embodiment performs three temperature tests, and the three set temperatures are 500°C, 700°C and 760°C respectively. In the first temperature test process, the lowest temperature is at point A, the temperature is 482.2°C, the highest temperature is at point B, the temperature is 511.8°C, the range is 29.6°C, the average temperature of point AI is 499.4°C, and the temperature deviation is 5.9%. In the second temperature test process, the lowest temperature is at point A, the temperature is 663.3°C, the highest temperature is at point E, the temperature is 698°C, the range is 34.7°C, the average temperature of point AI is 682.8°C, and the temperature deviation is 5.1%. In the third temperature test process, the lowest temperature is at point A, the temperature is 734.3°C, the highest temperature is at point C, the temperature is 751°C, the range is 16.7°C, the average temperature of point AI is 745.0°C, and the temperature deviation is 2.2%. In summary, through analysis of the three temperature tests, it is known that the temperature at the center of the substrate is lower, the temperature at the edge of the substrate is higher, and the temperature deviations of the three tests are all less than 6%. Therefore, the heater heats the substrate more uniformly.

[0125] See also Fig.29 , a vacuum port is also provided at the bottom of the preheating chamber 340, and the vacuum port is connected to a vacuum pump 345, and the preheating chamber 340 is evacuated by the vacuum pump 345 to obtain a preheating chamber 340 in a vacuum state. It should be noted that during the preheating process of the substrate 344, the vacuum treatment is first performed, and then the heating is performed to prevent the substrate from being oxidized. In some embodiments, a protective gas, such as nitrogen or helium, can also be introduced into the preheating chamber 340 to further prevent the substrate 344 from being oxidized.

[0126] See also Fig.29 In this embodiment, a heater 342 is set in the preheating cavity 340. It should be noted that multiple heaters 342 can be set on the side wall of the preheating cavity 340, and multiple heaters can be set on the top of the preheating cavity 340 to ensure the uniformity of the overall temperature of the preheating cavity 340.

[0127] See also Fig. 20 In this embodiment, a plurality of growth chambers 350 are arranged on the side wall of the transfer chamber 310. After the substrate completes the corresponding process in the preheating chamber 340, the substrate loading and unloading robot 311 in the transfer chamber 310 transfers the substrate to the growth chamber 350 for operation. Since a uniform arc magnetic field is formed in the growth chamber 350, uniform sputtering ions can be formed on the surface of the substrate, thereby forming a uniform thin film on the substrate.

[0128] See also Fig.33This embodiment also provides a method for using a semiconductor device, including:

[0129] S1: placing the substrate on the tray;

[0130] S2: performing a vacuum process, the stage moves upward to transport the substrate into the growth chamber to form a thin film on the substrate;

[0131] S3: performing vacuum breaking processing, wherein there is a preset distance between the carrier and the cooling plate.

[0132] See also Fig. 20 In step S1, the manufacturing interface 313 includes a cassette and a substrate loading and unloading robot (not shown in the figure). The cassette contains substrates that need to be processed. The substrate loading and unloading robot may include a substrate planning system to load the substrates in the cassette into the transition chamber 320, specifically, placing the substrate on the tray of the first carrier.

[0133] See also Fig. 20 In step S2, after the substrate is placed on the tray of the first stage, the transition chamber 320 is evacuated, for example, by first evacuating the transition chamber 320 to 1×10 -2 Pa, and then the transition chamber 320 is evacuated to 1×10 -4 Pa or less than 1×10 -4 Pa, when the transition chamber 320 enters the vacuum state, the control rod 324 drives the first stage and the second stage to move along a preset path, for example, the control rod 324 drives them to move upward. Then the substrate handling robot arm 311 in the transfer chamber 310 transfers the substrate from the transition chamber 320 to the transfer chamber 310, and then the transfer chamber 310 transfers the substrate to the cleaning chamber 330, the preheating chamber 340 and the growth chamber 350 in sequence. In the growth chamber 350, one or more of aluminum oxide, hafnium oxide, titanium oxide, titanium nitride, aluminum nitride, aluminum gallium nitride or gallium nitride can be formed on the surface of the substrate. In this embodiment, the substrate can be transferred between the manufacturing interface 313 and the transition chamber 320 via a slit valve, and between the transition chamber 320 and the transfer chamber 310 via a slit valve. The movement of the substrate handling robot arm 311 can be controlled by a motor drive system (not shown), and the motor drive system can include a servo motor or a stepper motor.

[0134] See also Fig. 20In step S3, after the coating work on the substrate is completed, the substrate loading and unloading robot arm 311 in the transfer chamber 310 transfers the substrate to the transition chamber 320. Specifically, the substrate is placed on the second stage, and then the second stage is controlled to move in the opposite direction of the preset path by the control rod. For example, the control rod controls the second stage to move downward so that the second stage contacts the cooling plate, and the second stage and the substrate are cooled by the cooling plate. Before the air intake and vacuum breaking treatment, the second stage is first controlled to leave the cooling plate to a preset distance, for example, 5-10mm, and then nitrogen or argon is introduced into the transition chamber 320 for vacuum breaking treatment to prevent cracks in the substrate due to the introduction of a large amount of nitrogen or argon while the substrate is being cooled. Then, the substrate is taken out by the substrate loading and unloading robot arm in the manufacturing interface.

[0135] See also Fig.34 , this embodiment analyzes the aluminum nitride coating on the substrate. It can be seen from the figure that when the relative temperature is less than 0.1, the A1 area shows loose fibrous microcrystals, which are inverted cone-shaped fibers. At the same time, there are a lot of gaps at the grain boundaries, and the film strength is poor. When the relative temperature is 0.1-0.3, the A2 area shows dense fibrous microcrystals. In this area, the microcrystals are still fine fibrous structures with a diameter of tens of nanometers. The defect density inside the fiber is still very high, the fiber boundary is densified, and the holes between the fibers basically disappear. The film strength is significantly improved compared with the A1 area. The film surface is basically flat and has small fluctuations. When the relative temperature is 0.3-0.5, the A3 area shows columnar crystal characteristics. In this area, each grain grows separately to obtain uniform columnar crystals. The defect density in the columnar crystal is low, the grain boundary density is high, and it shows crystallographic plane characteristics. When the relative temperature is greater than 0.5, the A4 area shows coarse equiaxed crystals. The defect density in the equiaxed crystals is very low, the film crystallization is very complete, and the strength is high. Therefore, when the relative temperature is low, i.e., 0-0.3, the sputtered ions fail to fully diffuse on the surface after being incident on the substrate surface, and are continuously covered by subsequent sputtered ions, thereby forming a relatively dense fiber structure that grows parallel to each other, and the fibers are surrounded by relatively loose boundaries. The fiber structure has low boundary density, low bonding strength, is weak and easy to crack, and exhibits obvious bundle fiber characteristics in cross-sectional morphology. When the relative stability is high, i.e., 0.3-0.7, the sputtered ions can fully diffuse on the surface after being incident on the substrate surface, and the migration distance of the sputtered ions increases. The fine fiber structure forms columnar crystals due to surface diffusion, and the columnar crystals form coarse equiaxed crystals after bulk diffusion and grain boundary movement, and the defects between grain boundaries are reduced. This embodiment deposits the coating at a uniform high temperature, the film formation speed is fast, the lattice arrangement of aluminum nitride shows growth in the direction of columnar crystals, the crystallinity of the film is good, and the uniformity of the film formation is also improved. The relative temperature is the ratio of the substrate temperature to the film melting temperature. If the substrate temperature is low, the relative temperature is low, and if the substrate temperature is high, the relative temperature is high.

[0136] See also Fig.35 In this embodiment, an aluminum nitride film 401 formed on a substrate 400 is analyzed. As can be seen from the figure, the aluminum nitride film 401 has a columnar crystal structure, and the aluminum nitride film 401 has a high internal density and a low defect density. Therefore, the aluminum nitride film formed by the semiconductor device is of high quality.

[0137] See also Fig.36 The figure shows the rocking curves of aluminum nitride films formed under two different film forming conditions. The dislocation density of the (002) crystal plane of the aluminum nitride film is then studied through the rocking curves. It should be noted that the difference between the two film forming conditions is only in the pre-treatment of the substrate. Fig.36 It can be seen that the half-peak width of the C1 curve is 227 arc angles, and the half-peak width of the C2 curve is 259 arc angles. It can be concluded that the aluminum nitride film obtained without pre-treatment of the substrate has a fast growth rate and a large dislocation density, and the aluminum nitride film obtained by pre-treatment of the substrate has a slow growth rate and a small dislocation density. Therefore, after the substrate is pre-treated, the quality of the aluminum nitride film formed under the same conditions is improved.

[0138] In summary, the present invention provides a semiconductor device, which can improve the sputtering utilization rate of the target material by forming a uniform arc magnetic field in the growth chamber, thereby effectively improving the uniformity of the coating.

[0139] The above description is only a preferred embodiment of the present application and an explanation of the technical principles used. Those skilled in the art should understand that the scope of the invention involved in the present application is not limited to the technical solution formed by a specific combination of the above-mentioned technical features, but should also cover other technical solutions formed by any combination of the above-mentioned technical features or their equivalent features without departing from the inventive concept, such as a technical solution formed by replacing the above-mentioned features with (but not limited to) technical features with similar functions disclosed in this application.

[0140] Except for the technical features described in the specification, the remaining technical features are known technologies to those skilled in the art. In order to highlight the innovative features of the present invention, the remaining technical features will not be described here in detail.

Claims

1. A method for using a semiconductor device, characterized in that: The carrier is arranged in a transition chamber, the transition chamber is arranged before the growth chamber, the carrier is divided into a first carrier and a second carrier, and before the vacuum treatment, the substrate is placed on a tray of the first carrier; Performing a vacuum treatment on the transition cavity until the transition cavity enters a vacuum state, wherein a vacuum port and an exhaust port are provided on one side of the transition cavity; The control rod drives the first stage and the second stage to move along a preset path, so that the substrate passes through the transition chamber, the transfer chamber, the cleaning chamber, the preheating chamber and the growth chamber in sequence to complete the coating of the substrate; After the coating is completed, the substrate is moved to the tray of the second stage of the transition chamber; The control rod drives the second stage to move in a direction opposite to the preset path until the control rod drives the second stage to contact the cooling plate to cool the second stage and the substrate; Before the vacuum breaking process, the control rod drives the second carrier to move until the distance between the second carrier and the cooling plate reaches a preset distance, and then the transition cavity is subjected to the vacuum breaking process; When the substrate is completely coated, the relative temperature is 0.3-0.7, and the relative temperature is the ratio of the substrate temperature to the melting temperature of the film.

2. The method for using the semiconductor device according to claim 1, wherein: The thin film of the substrate has a columnar crystal structure.

3. The method for using the semiconductor device according to claim 1, wherein: The relative humidity is 0.3-0.

5.

4. The method for using a semiconductor device according to claim 1, wherein: A target material is rotatably arranged on the top of the growth chamber, a magnet is arranged above the target material, the magnet is an arc-shaped structure or a rectangular structure, and the magnet is connected to a driving mechanism, and the driving mechanism drives the magnet to rotate and reciprocate up and down.

5. The method for using a semiconductor device according to claim 4, wherein: The magnet rotates around the central axis of the target, and the rotation speeds of the magnet and the target are different.

6. The method for using the semiconductor device according to claim 1, wherein: The invention also comprises a control unit, which is used for driving the susceptor to rise during the magnetron sputtering process so as to keep the distance between the target material and the susceptor unchanged.

7. The method for using a semiconductor device according to claim 1, wherein: The first carrier and the second carrier are connected to a support plate, the support plate is connected to a control rod, one end of the control rod is located outside the transition cavity, and the control rod drives the support plate to rise and / or fall.

8. The method for using the semiconductor device according to claim 6, wherein: The middle portion of the base is raised relative to the edge, the substrate is arranged on the middle portion of the base, a part of the substrate covers the edge area and is spaced apart from the edge area, and at the edge of the substrate, there is no direct contact between the base and the substrate.

9. The method for using a semiconductor device according to claim 1, wherein: Two air inlets are arranged on the side wall of the growth chamber, the two air inlets are staggered with each other, and the two air inlets are respectively connected to an air inlet pipeline.

10. The method for using a semiconductor device according to claim 1, wherein: The cooling plate is fixed on the transition cavity through a plurality of brackets.

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