Gas uniformizing device and semiconductor process equipment

Abstract

The application discloses a kind of uniform gas device and semiconductor process equipment, wherein the uniform gas device includes: substrate;First radial uniform gas disc, for the barrel-shaped cavity installed on the substrate, the first side wall of first radial uniform gas disc is distributed with first uniform gas hole, and the first radial uniform gas disc is connected with air inlet pipe;Second radial uniform gas disc, for the barrel-shaped cavity covered outside first radial uniform gas disc, second radial uniform gas disc is installed on the substrate by rotating pair;Second radial uniform gas disc is distributed with second uniform gas hole in second side wall;And first driving mechanism, installed on substrate, to drive the rotation of second radial uniform gas disc.The uniform gas device according to the application is relatively good to the initial flow rate adaptability of process gas.

Description

Technical Field

[0001] This invention relates to a gas equalization device used in semiconductor process equipment, and further to a semiconductor process equipment equipped with the gas equalization device. Background Technology

[0002] Semiconductor processing equipment often requires process gases. Examples include chemical vapor deposition (CVD) equipment, plasma injection equipment, oxidation equipment, heat treatment equipment, and packaging equipment. For instance, CVD is a chemical technique used to produce high-purity solid materials. It involves exposing a wafer, for example, as a substrate, to one or more different precursors, causing a chemical reaction and / or decomposition on the substrate surface to produce the desired thin film. Various byproducts are usually generated during the reaction, but most are carried away with the process gases and do not remain in the reaction chamber.

[0003] Since processes such as chemical vapor deposition (CVD) require the prepared films to reach the micron or even nanometer scale, this necessitates that the aerosol composition and flow pattern in contact with the substrate during CVD be relatively uniform. However, process gases are generally supplied through pipelines. A typical characteristic of pipeline gas supply is that the gas flow has a certain inertia, and it tends to spread a relatively long distance in the direction of gas supply, while only a small amount of process gas is obtained in other directions based on diffusion or turbulence. This is clearly an undesirable result for processes such as CVD.

[0004] In view of this, some semiconductor process equipment that has high requirements for the uniformity of process gas supply is generally equipped with a gas equalization device, so that a relatively stable and generally uniform gas flow is formed after the gas enters the reaction chamber.

[0005] A common gas equalization device employs a multi-stage orifice plate structure. Specifically, a pipe is positioned along the gas supply direction, and multiple orifice plates are arranged axially along this pipe. The orifice plates divide the pipe into several equalization chambers, allowing the process gas to achieve primary equalization through the first-stage orifice plate. This process continues, with the number of orifice plates determining the number of equalization stages. As mentioned earlier, the process gas entering through the inlet pipe generally has a certain flow velocity. For fluids, the principle of proximity is extremely pronounced; that is, the closer the orifice is to the inlet pipe, the greater the flow rate. However, this phenomenon is difficult to avoid regardless of whether orifices or slits are used, especially since gas equalization devices inevitably require orifices or slits to achieve equalization.

[0006] Furthermore, the orifice plates in the preceding stages have relatively large cross-sectional areas and relatively few orifices, while the orifice plates in the subsequent stages have relatively small cross-sectional areas but relatively many orifices. This is to gradually reduce the influence of the proximity effect, allowing the process gas to be gradually dispersed and homogenized within the multi-stage homogenization chamber. However, homogenization devices using this method often require five or even more stages to meet the desired homogenization requirements.

[0007] Therefore, some implementations employ homogenizing holes with relatively special shapes on the orifice plate, mainly elongated holes (similar to slits). These elongated holes also need to be arranged in a predetermined array to achieve a certain degree of dispersion of the process gas passing through the orifice plate, thus achieving homogenization. Such homogenization devices are generally relatively complex.

[0008] As can be seen from the above description, for process gases with different initial flow rates, the radial spread ability of the process gas will differ after entering the first-stage homogenization chamber. Similarly, the homogenization ability of each stage of the homogenization chamber is related to the initial flow rate of the process gas. That is, the current homogenization device may be able to homogenize process gases with a first flow rate, but it may be difficult to homogenize process gases with a second flow rate. This is a defect that is difficult to overcome in such homogenization equipment. Summary of the Invention

[0009] The purpose of this invention is to provide a gas equalization device with relatively good adaptability to the initial flow rate of process gas. This invention also relates to a semiconductor process equipment equipped with the gas equalization device.

[0010] According to a first aspect of the present invention, a gas equalization device is provided, comprising:

[0011] substrate;

[0012] The first radial air distribution plate is a cylindrical cavity mounted on the substrate. The first sidewall of the first radial air distribution plate is provided with first air distribution holes, and the first radial air distribution plate is connected to an air inlet pipe.

[0013] The second radial air-distributing disk is a cylindrical cavity covering the first radial air-distributing disk, and is mounted on the substrate via a rotating joint; second air-distributing holes are distributed on the second sidewall of the second radial air-distributing disk; and

[0014] A first drive mechanism is mounted on the substrate to drive the second radial air distribution disk to rotate.

[0015] Optionally, the distribution of the second air distribution holes on the second radial air distribution disk is a ring array of second air distribution holes arranged uniformly along the axial direction on the second radial air distribution disk.

[0016] Each second row of uniform air holes has an axially extending blade on one side to assist in generating a centrifugal effect.

[0017] Optionally, the blades are arranged in a ring array to form a vortex blade group to match the rotation direction of the second radial air distribution disk.

[0018] Optionally, an axially spaced gas distribution disk fixed on the substrate is also provided outside the second radial gas distribution disk;

[0019] Correspondingly, the upper cover plate of the axial air distribution disk is provided with a third air distribution hole.

[0020] Optionally, the substrate has a central hole, and the first cover plate of the first radial gas equalization disk and the second cover plate of the second radial gas equalization disk both have a central through hole.

[0021] A support shaft is provided, which passes through the central hole and the central through hole, to support the substrate;

[0022] A second drive mechanism is provided to drive the support shaft to rotate.

[0023] Optionally, the support shaft rotates in the opposite direction to the second radial air distribution disc.

[0024] Optionally, the second radial air distribution device is mounted on the substrate via a thrust bearing and has a connector extending to the second side of the substrate;

[0025] The second side is the side opposite to the side where the second radial gas equalization device is located;

[0026] Accordingly, the connector is equipped with a gear ring to drive the second radial air distribution device to rotate via a gear transmission mechanism.

[0027] Optionally, the first drive mechanism and the second drive mechanism share a power unit;

[0028] Accordingly, the power unit outputs power via a power shaft;

[0029] The active drive components of the first and second drive mechanisms are mounted on the power shaft.

[0030] Optionally, the substrate is a separate water-cooled flange, which includes:

[0031] A water-cooled annular disk, the annular hole of which forms the seat hole of the thrust bearing; and

[0032] The center disc is located within the annular hole to engage with the corresponding thrust bearing from the inside.

[0033] According to a second aspect of the present invention, a semiconductor process apparatus is provided, including the gas equalization device described in the first aspect of the present invention.

[0034] Unlike existing technologies where gas equalization components primarily perform gas equalization axially, the gas equalization device according to this invention first performs radial equalization. It begins by providing a first radial equalization disk for introducing process gas and performing initial equalization, completing the initial equalization. Then, a second radial equalization disk is provided, covering the first radial equalization disk, to provide a second equalization. The equalization components are the sidewalls of the first and second radial equalization disks, and the gas supply direction is typically axial. When the process gas enters, for example, the first radial equalization disk, it undergoes radial dispersion, making it easier to achieve relatively high equalization efficiency compared to traditional radial equalization components. Furthermore, the second radial equalization disk is constructed as a rotating disk, allowing its rotational speed to be adjusted according to the process gas flow rate, overcoming the difficulty in adjusting equalization due to changes in process gas flow rate, and exhibiting good adaptability to the initial flow rate of the process gas. Attached Figure Description

[0035] Figure 1 This is a schematic diagram of the gas equalization device in one embodiment.

[0036] Figure 2 This is a schematic diagram of the gas equalization device in another embodiment.

[0037] Figure 3 This is a schematic diagram of the structure of the reverse gas equalization disc (excluding the cover) in one embodiment.

[0038] In the diagram: 1. Driven sprocket, 2. Inlet pipe, 3. Cooling water inlet pipe, 4. Gear ring, 5. Cooling flange, 6. Thrust bearing, 7. Second air distribution hole, 8. Reverse air distribution plate, 9. Cover, 10. Base, 11. Forward rotation shaft, 12. Fixed air distribution plate, 13. First air distribution hole, 14. Cooling water outlet pipe, 15. Drive gear, 16. Magnetohydrodynamic fluid, 17. Drive sprocket, 18. Power shaft, 19. Electric motor, 20. Third air distribution hole, 21. Axial air distribution plate, 22. Stop, 23. Blade. Detailed Implementation

[0039] It should be understood that for semiconductor process equipment, such as CVD equipment, the main body is a rotating body with definite axial, radial and circumferential directions.

[0040] Process gas pipes are typically connected axially to, for example, the furnace plug of the furnace body. Figure 1 and Figure 2The cooling flange 5 shown can serve as the lower furnace plug or the lower furnace cover. In the figure, the inlet pipe 2 is the process gas inlet pipe. As mentioned in the background section, due to the use of a pipeline and the certain flow velocity of the process gas in the inlet pipe 2, when it is directly fed into the furnace cavity, there will be significant runoff, meaning it has a distinct path and cannot achieve uniform contact with the workpiece. Under these conditions, semiconductor process equipment that requires gas generally employs a gas homogenizing device to homogenize the process gas introduced through the inlet pipe 2, which can also be understood as eliminating runoff.

[0041] In some embodiments of the present invention, only radial air equalization is used to achieve air equalization, while in other embodiments, a radial air equalization device is used in conjunction with an axial air equalization device to achieve better air equalization effect.

[0042] As the mounting base, the main body of the substrate is a circular plate structure, and it is mainly used to construct the lower furnace cover, such as... Figure 1 and 2 The cooling flange 5 shown is installed at the lower end of the furnace body via a flange connection.

[0043] Given that the process temperature inside the furnace is generally high, the lower furnace cover adopts the form of a cooling flange 5 to protect components located outside the lower furnace cover, such as the electric motor 19 and two transmission mechanisms driven by the electric motor 19.

[0044] Considering that the cooling flange 5 may affect the stability of the process temperature inside the furnace, in some embodiments, the lower furnace cover may be made of heat-insulating material or at least contain a heat-insulating layer, thereby reducing the negative impact on the motor 19 and the like through thermal isolation.

[0045] exist Figure 1 and Figure 2 The illustrated structure has two radial gas equalization disks. The inner radial gas equalization disk is shown in the figure as fixed gas equalization disk 12, and is denoted as the first radial gas equalization disk.

[0046] As shown in the figure, the fixed gas equalization disc 12 is a cylindrical gas equalization disc with an upper bottom. Although it also has an inner tube for cooperating with the rotating shaft 11, the inner tube does not constitute a functional structure for gas equalization. The following description focuses on the functional structure of the fixed gas equalization disc 12, and the rotating shaft 11 shown in the figure does not necessarily need to be configured as a rotation shaft. Under this condition, the inner tube is not a necessary configuration.

[0047] Taking the fixed air distribution plate 12 as an example, the first radial air distribution plate has an upper barrel bottom as described above, the lower end of which is fixed to, for example, a cooling flange 5, and the fixed air distribution plate 12 is sealed from the lower end. The upper barrel bottom is a sealing plate, and the barrel body of the fixed air distribution plate 12 is referred to as the first side wall. The first side wall is provided with first air distribution holes 13 evenly in the figure.

[0048] The opening method of the first air distribution hole 13 on the first radial air distribution plate can be referred to Figure 3 Regarding the opening method of the reverse air distribution plate 8. From Figure 3 As can be seen, the second air distribution holes 7 are arranged in rows of four, and then arranged in a circular array with the axis of the reverse air distribution disk 8 as the axis. This hole-opening method is beneficial for drilling, such as with a multi-drill, and also for initial air distribution in the axial (column direction).

[0049] In addition, the distribution density of the first air equalization hole 13 on the first radial air equalization plate can be slightly less than the distribution density of the second air equalization hole 7 on the second radial air equalization plate. Since the barrel of the second radial air equalization plate is larger, even if the distribution density of the first air equalization hole 13 and the second air equalization hole 7 are the same and the hole diameter is the same, the number of the second air equalization hole 7 will be relatively larger because the side wall area of ​​the second radial air equalization plate is larger, thus satisfying the characteristic of gradual homogenization.

[0050] The phrase "slightly smaller" can be understood as meaning that, under the same distribution density, the pore size of the second uniform air hole 7 is relatively larger.

[0051] In some embodiments, the second air-distributing hole 7 may have the same diameter as the first air-distributing hole 13 to facilitate processing using, for example, the same set of drilling machines, thereby improving the manufacturability of the forming process. Under this condition, the air-distributing effect can be improved by increasing the number of second air-distributing holes 7.

[0052] In addition, the distribution density of the second air distribution hole 7 can be increased, but this distribution density should not be too high, otherwise the air distribution effect will be lost. The porosity on the sidewalls of both the first and second radial air distribution discs should not exceed 15%.

[0053] In addition, Figure 1 and Figure 2 In the middle, the fixed gas distribution plate 12, which serves as the first radial gas distribution plate, is connected to the air inlet pipe 2 to introduce process gas.

[0054] The intake pipe 2 is connected in the axial direction. The process gas flow will directly impact the bottom of the fixed gas distribution plate, resulting in dispersion and backflow. At the same time, the backflow and the intake flow will collide, resulting in secondary dispersion.

[0055] Regarding the number of intake pipes 2 Figure 1The illustrated structure has one inlet pipe, but in some embodiments multiple inlet pipes can be provided. Multiple inlet pipes 2 are evenly arranged at, for example, the location of the cooling flange 5 corresponding to the location of the first radial air distribution device, specifically in a single-ring array around the axis of the cooling flange 5.

[0056] Multiple intake pipes can be connected by a manifold to achieve the first stage of air equalization on both sides of the intake pipes.

[0057] exist Figure 1 and Figure 2 In the illustrated structure, the reverse-flowing air-distributing disk 8, which serves as the second radial air-distributing disk, is also a cylindrical cavity, and second air-distributing holes 7 are distributed on its second sidewall. Figure 3 The example structure is relatively clear, so it will not be repeated here.

[0058] In addition, Figure 3 In the illustrated structure, the upper end of the reversing gas equalization disc 8 has a stop for fitting such as Figure 1 The cap 9 is shown in the image.

[0059] The cover 9 has a central through hole for, for example, access to the forward rotation shaft 11.

[0060] In a preferred embodiment, the first gas equalization hole 13 and the second gas equalization hole 7 are staggered, so that a portion of the gas discharged through the first gas equalization hole 13 will directly hit the inner wall surface of the second radial gas equalization plate, thus achieving a relatively good gas equalization effect.

[0061] Furthermore, a first driving mechanism is provided, which is mounted on the substrate to drive the second radial gas equalization disk to rotate, thereby reducing the influence of flow rate on gas equalization according to the change of gas intake, so as to improve the adaptability to changes in process gas flow rate.

[0062] The main function of the second radial gas equalization disk is to generate a certain centrifugal force, thereby adjusting the rate at which gas is discharged from the chamber of the second radial gas equalization disk.

[0063] Furthermore, as previously stated and in reference to Figure 3As shown, the second air distribution holes on the second radial air distribution disk are distributed in a ring array of rows of second air distribution holes evenly arranged along the axial direction on the second radial air distribution disk; furthermore, each row of second air distribution holes has an axially extending blade 23 on one side to assist in generating a centrifugal effect. This structure is similar to a centrifugal fan, which uses centrifugal force to radially transport gas entering through the inlet. The outlet speed is adjusted by changing the rotational speed. In the embodiment of the present invention, by utilizing this principle, blades are used to isolate the radial channel, making the centrifugal effect more pronounced, thereby achieving better adjustment according to changes in the intake volume and intake speed even when the rotational speed of the second radial air distribution disk is relatively low.

[0064] The blades in centrifugal fans are primarily radial blades (used to describe blades arranged in a radially extending manner). Figure 3 The blade 23 used in the illustrated structure is also a radial blade, but in some implementations other types of blade arrangements can be selected, such as a vortex blade group formed by a ring array of blades, to adapt to the rotation direction of the second radial air distribution disk, which can easily achieve a better effect suitable for low-speed adjustment.

[0065] exist Figure 2 In the illustrated structure, an axially oriented gas equalizing disk 21, fixed to the substrate, is also covered outside the reversible gas equalizing disk 8, which serves as the second radial gas equalizing disk. This axially oriented gas equalizing disk 21 is also a barrel-shaped structure, with its bottom facing upwards and its opening receiving a container as shown in the diagram. Figure 2 On the cooling flange 5 shown.

[0066] Correspondingly, the upper cover plate of the axial air distribution disk 21 is provided with a third air distribution hole 20.

[0067] As mentioned above, the second radial gas distribution disk can rotate. In some implementations, it can also be used to rotate the process object, that is... Figure 1 and Figure 2 The rotation of the substrate 10 shown in the diagram further mixes the process gas transported circumferentially through the turbulence generated by its own rotation. Accordingly, the substrate has a central hole, and the first cover plate of the first radial gas equalization disk and the second cover plate of the second radial gas equalization disk both have central through holes for the introduction of power.

[0068] Furthermore, a support shaft is provided that passes through the central hole and the central through hole, such as... Figure 1 and Figure 2 The rotating shaft 11 shown is used to support the base 10.

[0069] A second drive mechanism is provided to drive the support shaft to rotate.

[0070] exist Figure 1 and Figure 2In the illustrated structure, the upper end of the forward rotation shaft 11, which serves as a support shaft, can be, for example, a quartz boat used to hold the base 10.

[0071] In addition, the outer surface of the quartz boat can have ribs to generate turbulence. For the purpose of generating turbulence, the ribs do not need to be very long; otherwise, it will cause excessive disturbance to the process gas and fail to achieve a good process gas homogenization effect. The radial elongation of the ribs is 1.5~3mm, and the ribs approximate ridges.

[0072] Furthermore, the support shaft rotates in the opposite direction to the second radial gas equalization disk, thereby creating opposite forces that cause the process gas to rotate, thus producing a counteracting effect and making the process gas equalization more favorable.

[0073] exist Figure 1 and Figure 2 In the illustrated structure, the reverse air distribution disk 8, which serves as the second radial air distribution device, is mounted on the base plate via a thrust bearing 6 and has a connector extending to the second side of the base plate. Its assembly method is similar to that of a tower crane bearing, and it is a relatively large thrust bearing.

[0074] Furthermore, this second side is the side opposite to the side where the second radial gas equalization device is located, based on Figure 1 and Figure 2 The lower side is shown in the image.

[0075] Accordingly, the connector is equipped with a gear ring 4 to drive the second radial air distribution device to rotate via a gear transmission mechanism.

[0076] exist Figure 1 and Figure 2 In the illustrated structure, the first drive mechanism and the second drive mechanism share a power unit, such as the electric motor 19 shown in the figure. The motor shaft of the electric motor 19 is connected to a power shaft 18 via a coupling. The power shaft 18 is equipped with a drive sprocket 17 and a drive gear 15. Correspondingly, a driven sprocket 1 is mounted on the forward rotation shaft 11, and the driven sprocket 1 and the drive sprocket 17 form a chain drive mechanism using a transmission chain.

[0077] In the figure, the driving gear 15 meshes with the gear ring 4 to form a gear transmission mechanism.

[0078] If the drive shaft rotates clockwise, the drive gear 15 and drive sprocket 17 will also rotate clockwise. The gear ring 4 meshing with the drive gear 15 will inevitably rotate counterclockwise. The driven sprocket 1 will also rotate clockwise under the drive of the drive sprocket 17. Under this condition, the second radial air distribution disc will rotate counterclockwise, and the forward rotation shaft 11 will rotate clockwise. The two rotate in opposite directions.

[0079] exist Figure 1 and Figure 2In the illustrated structure, to enable the intervention of the reverse air distribution disc 8, the cooling flange 5 needs to be made into a split structure. The cooling flange 5 shown in the figure is a water-cooled flange, which includes:

[0080] A water-cooled annular disk, the annular hole of which forms the seat hole of the thrust bearing 6; and

[0081] The center disc is located inside the annular hole to mate with the corresponding thrust bearing 6 from the inside; obviously, the center disc has the center hole.

Claims

1. A gas homogenizing device characterized by, Comprising: a substrate; a first radial air distribution plate, which is a cylindrical cavity installed on the substrate, and the first radial air distribution plate is provided with first air distribution holes on a first sidewall thereof, and the first radial air distribution plate is connected with an air inlet pipe; a second radial air distribution plate, which is a cylindrical cavity covering the first radial air distribution plate, and the second radial air distribution plate is installed on the substrate through a rotary pair; the second radial air distribution plate is provided with second air distribution holes on a second sidewall thereof; and a first driving mechanism installed on the substrate to drive the second radial air distribution plate to rotate; the second air distribution holes are arranged in the form of an annular array of second air distribution hole rows around the second radial air distribution plate, wherein the second air distribution hole rows are uniform arrangements of the second air distribution holes in the axial direction of the second radial air distribution plate; each second air distribution hole row is provided with an axially extending blade on one side thereof to assist in generating a centrifugal effect; the blades form a scroll blade set through the annular array to adapt to the rotation direction of the second radial air distribution plate; an axial air distribution plate is further covered outside the second radial air distribution plate and fixed on the substrate; correspondingly, the upper cover plate of the axial air distribution plate is provided with third air distribution holes; the substrate is provided with a central hole, and the first cover plate of the first radial air distribution plate and the second cover plate of the second radial air distribution plate are both provided with a central through hole; a support shaft is provided to pass through the central hole and the central through hole to support the substrate; a second driving mechanism is provided to drive the support shaft to rotate.

2. The air homogenizing device according to claim 1, characterized in that The support shaft and the second radial air distribution plate rotate in opposite directions.

3. The air homogenizing device according to claim 1 or 2, characterized in that The second radial air distribution plate is installed on the substrate through a thrust bearing and has a connecting head extending to a second side of the substrate; the second side is opposite to the side where the second radial air distribution plate is located; correspondingly, the connecting head is provided with a gear ring to drive the second radial air distribution plate to rotate through a gear transmission mechanism.

4. The air homogenizing device according to claim 3, characterized in that The first driving mechanism and the second driving mechanism share a power machine; correspondingly, the power machine is connected with a power output shaft; the driving members of the first driving mechanism and the second driving mechanism are installed on the power output shaft.

5. The air homogenizing device according to claim 3, wherein The substrate is a split water-cooled flange, which comprises: a water-cooled annular disc, and an annular hole of the water-cooled annular disc constitutes a seat hole of the thrust bearing; and a central disc located in the annular hole to cooperate with the corresponding thrust bearing from the inside.

6. A semiconductor process apparatus characterized by comprising: The air distribution device comprises any one of claims 1-5. The air distribution device comprises any one of claims 1-5.

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