8*8 infrared thermopile wafer level parameter automatic probe test system

Abstract

The invention belongs to the technical field of wafer test equipment, and particularly relates to an 8 * 8 infrared thermopile wafer level parameter automatic probe test system, which comprises a probe station and a test machine junction box arranged on the probe station, a test machine is arranged on one side of the probe station, the test machine is electrically connected with the test machine junction box, and the test machine junction box is electrically connected with the probe station. A wafer placing area is arranged in the center of the probe station, a probe card used for testing wafers is arranged above the wafer placing area, the probe card is detachably installed on the probe station, four-station electrical parameter parallel testing can be carried out at the same time, the standard of sampling data interfaces is unified, and infrared thermopile multi-parameter, multi-station and multi-parameter parallel testing can be carried out. And testing such as a working clock, reference voltage, sleep power consumption and working current can be carried out simultaneously, so that the production UPH efficiency is improved.

Description

Technical Field

[0001] The invention belongs to the technical field of wafer testing equipment, and in particular relates to an 8x8 infrared thermopile wafer-level parameter automatic probe testing system. Background Art

[0002] Compared with other basic application chips (generally within 1.0mm*1.0mm), the surface area of ​​8x8 infrared thermopile grains is large (3.5mm*3.5mm). In the same 8-inch / 12-inch wafer, it can only etch and produce more than 1000 / 3000 DIEs, which has a higher economic value than its single DIE. In addition, each grain of 8x8 infrared thermopile has 64 blocks. Due to the difference in doping concentration during the tape-out process, the response potential of each BLOCK will be different. Before packaging to form various shapes and using the finished products, it is necessary to test the various parameter values ​​of 8x8 infrared thermopile grains and make TRIM adjustment compensation. The current more common method for performing TRIM adjustment compensation on grains is to perform it on 8-inch wafers / 12-inch wafers before the grain DIEs are cut and separated, so as to uniformly classify and distinguish the electrical properties of each DIE on the wafer and improve the efficiency of TRIM adjustment.

[0003] In this context, a test system should be developed to generate controllable infrared excitation light sources, completely simulate infrared emission sources under different temperature conditions in nature, radiate the surface of 8x8 infrared thermopile grains, and let the weak electrical difference signals generated by the 8*8 blocks be transmitted to the 16-bit ∑ADC for averaging and summing after passing through 64 amplifiers, and then converted into standard I2C signals through the LOG processing circuit. The ATE system collects the signals, makes TRIM adjustment compensation after calculation, and then analyzes and classifies them to distinguish good from defective products, and gives a completed MAP diagram for the subsequent packaging finished product to call. Summary of the invention

[0004] In view of the above-mentioned deficiencies in the prior art, the present invention provides an 8x8 infrared thermopile wafer-level parameter automatic probe testing system to solve the above-mentioned existing problems.

[0005] In order to solve the above technical problems, the present invention adopts the following technical solutions:

[0006] An 8x8 infrared thermopile wafer-level parameter automatic probe testing system comprises a probe station and a tester junction box installed on the probe station, a tester is provided on one side of the probe station, the tester is electrically connected to the tester junction box, a wafer placement area is provided at the center of the probe station, a probe card for testing wafers is provided above the wafer placement area, and the probe card is detachably installed on the probe station.

[0007] Furthermore, the probe card includes a needle card fixing plate and a light source fixing plate detachably mounted on the needle card fixing plate, a light-transmitting hole is opened on the light source fixing plate, an infrared excitation light source is mounted on the light source fixing plate, the infrared excitation light source penetrates the needle card fixing plate, gold needles are arranged on both sides of the infrared excitation light source, the gold needles are fixedly connected to the bottom of the needle card fixing plate, an information acquisition and processing card is mounted on both ends of the needle card fixing plate, and two data interfaces are correspondingly arranged on the information acquisition and processing card.

[0008] Furthermore, the probe station is rotatably connected with a cover plate.

[0009] Furthermore, the testing machine includes a testing host and a testing display screen.

[0010] Compared with the prior art, the present invention has the following beneficial effects:

[0011] 1. The test system of the present invention can completely imitate the three wavebands of short-wave infrared (1-2.5 μm), medium-wave infrared (3-5 μm), and long-wave infrared (8-12 μm) in the natural atmosphere because the infrared excitation heat source it generates is controllable. The calculation circuit is formulated to facilitate the programming of various tests on the electrical parameters of the 8x8 infrared thermopile grains.

[0012] 2. The test system of the present invention can test four-station electrical parameters in parallel at the same time, and the sampling data interface standard is unified. It can test multiple parameters of infrared thermopile, such as working clock, reference voltage, sleep power consumption, and working current, at the same time, thereby improving the production UPH efficiency;

[0013] 3. The modular design of the test system of the present invention can facilitate later machine modification and maintenance. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 A test system structure diagram of an embodiment of an 8x8 infrared thermopile wafer-level parameter automatic probe test system of the present invention;

[0015] Figure 2 A schematic diagram of the three-dimensional structure of a probe card in an embodiment of an 8x8 infrared thermopile wafer-level parameter automatic probe testing system of the present invention (viewing angle 1);

[0016] Figure 3 A schematic diagram of the three-dimensional structure of a probe card in an embodiment of an 8x8 infrared thermopile wafer-level parameter automatic probe testing system of the present invention (viewing angle 2);

[0017] Figure 4 This is a schematic diagram of the distribution of 8x8 infrared thermopile grains on a wafer in an embodiment of an 8x8 infrared thermopile wafer-level parameter automatic probe testing system of the present invention;

[0018] Figure 5 It is a schematic diagram of 8x8 infrared thermopile wafer-level testing of an embodiment of an 8x8 infrared thermopile wafer-level parameter automatic probe testing system of the present invention;

[0019] The reference numerals in the drawings of the specification include:

[0020] Probe station 1, test machine junction box 2, test machine 3, wafer placement area 4, probe card 5, needle card fixing plate 6, light source fixing plate 7, infrared excitation light source 8, gold needle 9, information acquisition processing card 10. DETAILED DESCRIPTION

[0021] In order to enable those skilled in the art to better understand the present invention, the technical solution of the present invention is further described below in conjunction with the accompanying drawings and embodiments.

[0022] Among them, the drawings are only used for illustrative explanations, and they only represent schematic diagrams rather than actual pictures, and should not be understood as limitations on this patent; in order to better illustrate the embodiments of the present invention, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the size of the actual product; for those skilled in the art, it is understandable that some well-known structures and their descriptions in the drawings may be omitted.

[0023] Example:

[0024] like Figure 1-Figure 5 As shown, an 8x8 infrared thermopile wafer-level parameter automatic probe test system of the present invention comprises a probe station 1 and a test machine junction box 2 installed on the probe station 1, a test machine 3 is provided on one side of the probe station 1, the test machine 3 is electrically connected to the test machine junction box 2, a wafer placement area 4 is provided at the center of the probe station 1, a probe card 5 for testing the wafer is provided above the wafer placement area 4, the probe card 5 is detachably installed on the probe station 1, the probe card 5 comprises a needle card fixing plate 6 and a light source fixing plate 7 detachably installed on the needle card fixing plate 6, a light transmission hole is provided on the light source fixing plate 7, an infrared excitation light source 8 is installed on the light source fixing plate 7, the infrared excitation light source 8 penetrates the needle card fixing plate 6, gold needles 9 are provided on both sides of the infrared excitation light source 8, the gold needles 9 are fixedly connected to the bottom of the needle card fixing plate 6, an information acquisition processing card 10 is installed on both ends of the needle card fixing plate 6, two data interfaces are correspondingly provided on the information acquisition processing card 10, the probe station 1 is rotatably connected with a cover plate, and the test machine 3 comprises a test host and a test display screen. Specifically, when using the 8x8 infrared thermopile wafer-level parameter automatic probe test system, the test process is as follows:

[0025] First, place the 8x8 infrared thermopile WAFER flatly on the probe station's tray, which can move in four directions: front, back, left, and right.

[0026] Then use the 64-core cable to connect the four groups of 64-core horns A-A1, B-B1, C-C1, and D-D1 one by one:

[0027] The infrared excitation light source 8 is placed directly above the light-transmitting hole, so that the infrared radiation it generates can directly and effectively illuminate the surface of the 8x8 infrared thermopile;

[0028] The four groups of gold pins 9 on the pin card fixing plate 6 are connected to the corresponding four 8x8 infrared thermopile crystal chips. The test machine 3 generates different duty cycle signals to the G pole of the NMOS switch according to the set program, so that the DC12V power source is turned on and then transmitted to the infrared excitation light source through the selection switch, so that it generates heat radiation to the 8x8 infrared thermopile crystal chip. After the 64 GAIN circuits inside it receive the heat, a voltage difference is generated at the input end of each GAIN, which is then amplified and transmitted to the ∑ADC circuit through the OUT end for analog-to-digital signal processing;

[0029] Furthermore, the 64 ADC GAIN circuits in the m 8x8 infrared thermopile dies on each wafer output different BIT values ​​≤ the set value n after analog-to-digital signal processing at two to three different temperature points, which are called dead points. The specific number of dead points and their positions need to be written into the die register through the test system to facilitate the application end to call;

[0030] Furthermore, the signals processed by the 8x8 infrared thermopile chip ∑ADC circuit for analog-to-digital signal processing are processed by the LOGIC control circuit, and the data converted into the radiant heat from the first thermopile to the 64th thermopile are transmitted to the two-wire I2C conversion circuit in sequence, and the standard I2C signals are obtained to communicate with the I2C module of the test machine, and then stored and recorded in the test machine 3 in sequence for comparison and call;

[0031] Further, according to this summation formula C i The data obtained by summing the AD converted data and then dividing the averaged data by 64 can eliminate low thermal noise and be closer to the true value;

[0032] Further, see the attached Figure 5 In the figure, the duty cycle of the duty cycle signal source is changed to make the current change from 0-100%, each step is 1%, according to Q = I2Rt = Pt; (2) the relationship, in the same time, the current value is changed by 1%, that is, the power P changes linearly by 1%, which is reflected in T2-T1 = Pt / mc; (3) the relationship, that is, the temperature also changes linearly by 1% in equal proportion, which is further reflected in M ​​= σT 4 (1) The relationship is the change in radiation emittance;

[0033] Furthermore, in order to reduce the low thermal noise introduced by each duty cycle change, it is required to stabilize for 10S before collecting ADC data. Through program conversion, the temperature change value of the light source surface is obtained each time, and then converted into the radiation emittance change value, and finally matched with the current change value output to the infrared light source resistance heating core to form a fixed program algorithm relationship.

[0034] Furthermore, the current of the analog signal working part inside the 8x8 infrared thermopile chip is provided by the test machine voltage source V2 connected to AVDD, and its working current is read by the ammeter A1 inside the test machine; the current of the internal digital signal working part is provided by the test machine voltage source V3 connected to VIF, and its working current is read by the ammeter A2 inside the test machine;

[0035] Further, the basic clock of the 8x8 infrared thermopile chip ∑ADC circuit can be read at TESTD2 using a counter in the test machine 3; and the reference working voltage of the 8x8 infrared thermopile chip ∑ADC circuit can be read at TESTA1 using a voltmeter in the test machine;

[0036] Furthermore, the m 8x8 infrared thermopile dies on each wafer communicate with each other through the probe machine and the test system, so that the corresponding register in each die is written with an ID number: the ID number includes: the chip number (1-25) + the coordinates of each die, for example, the 4th wafer, the coordinate position X=20, Y=25, then the number is 42025) to facilitate system management and data retrieval;

[0037] Furthermore, the corresponding registers of the m 8x8 infrared thermopile chips on each wafer are written with the required ambient temperature according to the CP calibration, ranging from -55 degrees to 125 degrees, to facilitate the application end to call.

[0038] The above are only embodiments of the present invention. The common knowledge such as the known specific structures and characteristics in the scheme is not described in detail here. The ordinary technicians in the relevant field are aware of all the common technical knowledge in the technical field of the invention before the application date or priority date, can obtain all the existing technologies in the field, and have the ability to apply the conventional experimental means before that date. The ordinary technicians in the relevant field can improve and implement the scheme in combination with their own abilities under the enlightenment given by this application. Some typical known structures or known methods should not become obstacles for the ordinary technicians in the relevant field to implement this application. It should be pointed out that for the technicians in this field, without departing from the structure of the present invention, several deformations and improvements can be made, which should also be regarded as the protection scope of the present invention, and these will not affect the effect of the implementation of the present invention and the practicality of the patent.

[0039] The same or similar numbers in the drawings of the embodiments of the present invention correspond to the same or similar parts; in the description of the present invention, it should be understood that if the terms "upper", "lower", "left", "right", "inner", "outer", etc. appear, the orientation or position relationship indicated is based on the orientation or position relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, the terms describing the position relationship in the drawings are only used for illustrative purposes and cannot be understood as a limitation on this patent. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to specific circumstances.

[0040] In the description of the present invention, unless otherwise clearly specified and limited, if the term "connection" or the like appears to indicate the connection relationship between components, the term should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two components or the interaction relationship between two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

Claims

1. An 8x8 infrared thermopile wafer-level parameter automatic probe test system, characterized by: It includes a probe station and a test machine junction box installed on the probe station, a test machine is provided on one side of the probe station, the test machine is electrically connected to the test machine junction box, a wafer placement area is provided at the center of the probe station, a probe card for testing the wafer is provided above the wafer placement area, and the probe card is detachably installed on the probe station.

2. The 8x8 infrared thermopile wafer-level parameter automatic probe test system according to claim 1, characterized in that: The probe card includes a needle card fixing plate and a light source fixing plate detachably mounted on the needle card fixing plate, a light-transmitting hole is opened on the light source fixing plate, an infrared excitation light source is mounted on the light source fixing plate, the infrared excitation light source penetrates the needle card fixing plate, gold needles are arranged on both sides of the infrared excitation light source, the gold needles are fixedly connected to the bottom of the needle card fixing plate, an information acquisition and processing card is mounted on both ends of the needle card fixing plate, and two data interfaces are correspondingly arranged on the information acquisition and processing card.

3. The 8x8 infrared thermopile wafer-level parameter automatic probe test system according to claim 1, characterized in that: The probe station is rotatably connected and provided with a cover plate.

4. The 8x8 infrared thermopile wafer-level parameter automatic probe test system according to claim 3, characterized in that: The testing machine comprises a testing host and a testing display screen.

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