Backlight unit and display apparatus including same

Abstract

The invention provides a backlight unit and a display apparatus including the same. The backlight unit includes a base substrate, a wiring layer, a light emitting element, a connection member, a backlight flexible substrate, and a pad connection member, in which a light emitting region and a non-light emitting region are defined in the base substrate; the wiring layer comprises a lower conductive layer arranged on the base substrate, a middle conductive layer arranged on the lower conductive layer, and an upper conductive layer arranged on the middle conductive layer; the light-emitting element is arranged on the wiring layer in the light-emitting area; a connecting member electrically connecting the light emitting element and the wiring layer, the connecting member contacting the intermediate conductive layer of the wiring layer and the light emitting element; the backlight flexible substrate is electrically connected to the wiring layer in the non-light-emitting area; a pad connection member electrically connects the wiring layer and the backlight flexible substrate in the non-light emitting region, the pad connection member contacting an upper conductive layer of the wiring layer.

Description

[0001] This application is a divisional application with application date of July 31, 2020, application number 202010757437.5, and invention name “Backlight unit and display device including a backlight unit”.

[0002] CROSS-REFERENCE TO RELATED APPLICATIONS

[0003] This application claims priority to Korean Patent Application No. 10-2019-0093228, filed on Jul. 31, 2019, which is hereby incorporated by reference for all purposes as if fully set forth herein. Technical Field

[0004] Exemplary embodiments of the present invention generally relate to a backlight unit, and more particularly, to a display apparatus including the backlight unit. Background Art

[0005] A non-emissive display device such as a liquid crystal display device generates an image using light provided from a backlight unit because a display panel itself for generating an image does not emit light.

[0006] The backlight unit may include a light emitting element as a light source. The light emitting element may be provided in plurality, and each light emitting element may be provided on a substrate.

[0007] The above information disclosed in this Background section is only for understanding the background of the present inventive concept and therefore it may contain information that does not constitute prior art. Summary of the invention

[0008] In order to reduce material costs, attempts have been made to apply a substrate having a wiring layer formed on a separate base substrate, instead of a printed circuit board, as a substrate of a backlight unit on which a light emitting element is mounted.

[0009] The device constructed according to the exemplary embodiment of the present invention can provide a backlight unit having a simplified structure and reduced manufacturing cost, and a display device including the backlight unit.

[0010] Additional features of the inventive concept will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the inventive concept.

[0011] According to one or more exemplary embodiments of the present invention, a backlight unit includes a base substrate, a wiring layer, a light-emitting element, a connecting member, a backlight flexible substrate and a pad connecting member, wherein a light-emitting area and a non-light-emitting area are defined in the base substrate; the wiring layer includes a lower conductive layer arranged on the base substrate, an intermediate conductive layer arranged on the lower conductive layer, and an upper conductive layer arranged on the intermediate conductive layer; the light-emitting element is arranged on the wiring layer in the light-emitting area; the connecting member electrically connects the light-emitting element and the wiring layer, and the connecting member contacts the intermediate conductive layer and the light-emitting element of the wiring layer; the backlight flexible substrate is electrically connected to the wiring layer in the non-light-emitting area; the pad connecting member electrically connects the wiring layer and the backlight flexible substrate in the non-light-emitting area, and the pad connecting member contacts the upper conductive layer of the wiring layer.

[0012] The backlight unit may further include an insulating layer, a contact hole and a pad contact hole, wherein the insulating layer is arranged between the wiring layer and the light-emitting element; the contact hole exposes the intermediate conductive layer, and the contact hole is defined to penetrate the insulating layer and the upper conductive layer in the light-emitting area; the pad contact hole exposes the upper conductive layer, and the pad contact hole is defined to penetrate the insulating layer in the non-light-emitting area, the connecting member may contact the intermediate conductive layer through the contact hole, and the pad connecting member may contact the upper conductive layer through the pad contact hole.

[0013] The backlight unit may further include a reflective layer directly disposed on the insulating layer, the reflective layer including an opening, and the light emitting element may be disposed in the opening in a plan view.

[0014] The backlight unit may further include a capping layer disposed on the light emitting element and a wavelength converter disposed on the capping layer, wherein the capping layer covers the light emitting element.

[0015] A capping layer may also be disposed in the space between the light emitting element and the insulating layer.

[0016] The light emitting element may be configured to emit blue light, and the wavelength converter may include a first wavelength shifter configured to convert the blue light into red light and a second wavelength shifter configured to convert the blue light into green light.

[0017] The lower conductive layer and the upper conductive layer may include at least one of titanium and a titanium alloy, and the intermediate conductive layer may include at least one of copper and a copper alloy.

[0018] The lower conductive layer may include a first lower conductive pattern and a second lower conductive pattern arranged to be spaced apart from each other in the light emitting region, the middle conductive layer may include a first middle conductive pattern and a second middle conductive pattern arranged to be spaced apart from each other in the light emitting region, and the upper conductive layer may include a first upper conductive pattern and a second upper conductive pattern arranged to be spaced apart from each other in the light emitting region, the first lower conductive pattern, the first middle conductive pattern and the first upper conductive pattern may overlap with each other, the second lower conductive pattern, the second middle conductive pattern and the second upper conductive pattern may overlap with each other, the light emitting element may include a first electrode electrically connected to the first middle conductive pattern and a second electrode electrically connected to the second middle conductive pattern, and a distance between the first lower conductive pattern and the second lower conductive pattern may be smaller than a distance between the first upper conductive pattern and the second upper conductive pattern.

[0019] The upper conductive layer may further include a protrusion tip connected to the first upper conductive pattern, the protrusion tip being disposed at an edge of the first upper conductive pattern facing the second upper conductive pattern and not contacting the first intermediate conductive pattern.

[0020] The backlight unit may also include a switching element arranged between the base substrate and the wiring layer, the wiring layer may include a first conductive pattern, a second conductive pattern, a pad and a connecting pattern, the first conductive pattern is arranged in the light-emitting area and is connected to the first electrode of the light-emitting element and the switching element; the second conductive pattern is arranged in the light-emitting area, is connected to the second electrode of the light-emitting element and is separated from the first conductive pattern; the pad is arranged in the non-light-emitting area, and the pad is in contact with the pad connecting member; the connecting pattern is connected to the pad and the switching element.

[0021] According to one or more exemplary embodiments of the present invention, a display device includes a display panel and a backlight unit that provides light to the display panel, wherein the backlight unit includes a base substrate, a wiring layer, a light-emitting element, a connecting member, a backlight flexible substrate, a pad connecting member, and a wavelength converter, wherein a light-emitting area and a non-light-emitting area are defined in the base substrate; the wiring layer includes a lower conductive layer arranged on the base substrate, an intermediate conductive layer arranged on the lower conductive layer, and an upper conductive layer arranged on the intermediate conductive layer; the light-emitting element is arranged on the wiring layer in the light-emitting area and is configured to emit blue light; the connecting member electrically connects the light-emitting element and the wiring layer, and the connecting member contacts the wiring layer and the intermediate conductive layer of the light-emitting element; the backlight flexible substrate is electrically connected to the wiring layer in the non-light-emitting area; the pad connecting member electrically connects the wiring layer and the backlight flexible substrate in the non-light-emitting area, and the pad connecting member contacts the upper conductive layer of the wiring layer; and the wavelength converter is arranged between the light-emitting element and the display panel.

[0022] According to one or more exemplary embodiments of the present invention, a backlight unit includes a base substrate, a wiring layer, a light-emitting element, a connecting member, a backlight flexible substrate and a pad connecting member, wherein a light-emitting area and a non-light-emitting area are defined in the base substrate; the wiring layer includes a lower conductive layer arranged on the base substrate and an upper conductive layer arranged on the lower conductive layer, and the upper conductive layer is in contact with the lower conductive layer; the light-emitting element is arranged on the wiring layer in the light-emitting area; the connecting member electrically connects the light-emitting element and the wiring layer, and the connecting member contacts the light-emitting element and the lower conductive layer of the wiring layer; the backlight flexible substrate is electrically connected to the wiring layer in the non-light-emitting area; the pad connecting member electrically connects the wiring layer and the backlight flexible substrate in the non-light-emitting area, and the pad connecting member contacts the upper conductive layer of the wiring layer.

[0023] The upper conductive layer of the wiring layer may be provided only in the non-light emitting region.

[0024] A thickness of a portion of the lower conductive layer disposed in the light emitting region may be thinner than a thickness of a portion of the lower conductive layer disposed in the non-light emitting region.

[0025] The lower conductive layer may include at least one of aluminum (Al), aluminum alloy, silver (Ag), silver alloy, and gold (Au), and the upper conductive layer may include at least one of titanium and a titanium alloy.

[0026] The backlight unit may further include an insulating layer, a contact hole and a pad contact hole, wherein the insulating layer is arranged between the wiring layer and the light emitting element; the contact hole exposes the lower conductive layer, and the contact hole is defined to penetrate the insulating layer in the light emitting area; the pad contact hole exposes the upper conductive layer, and the pad contact hole is defined to penetrate the insulating layer in the non-light emitting area, the connecting member may contact the lower conductive layer through the contact hole, and the pad connecting member may contact the upper conductive layer through the pad contact hole.

[0027] The backlight unit may further include: a capping layer disposed on and covering the light emitting element; a wavelength converter disposed on the capping layer; and a passivation layer covering the wavelength converter, and a portion of the wavelength converter may be in contact with the insulating layer.

[0028] The wavelength converter may include quantum dots.

[0029] A light emitting block including a plurality of light emitting elements may be defined on the wiring layer, the lower conductive layer may include a plurality of lower conductive patterns spaced apart from each other, and the plurality of light emitting elements included in the light emitting block may be connected to each other in series through the lower conductive patterns.

[0030] According to one or more exemplary embodiments of the present invention, a display device includes a display panel and a backlight unit, wherein the backlight unit is configured to provide light to the display panel, the backlight unit includes a base substrate, a wiring layer, a light emitting element, a connecting member, a backlight flexible substrate, a pad connecting member, and a wavelength converter, wherein a light emitting area and a non-light emitting area are defined in the base substrate, the wiring layer includes a lower conductive layer disposed on the base substrate and an upper conductive layer disposed on the lower conductive layer, the upper conductive layer contacts the lower conductive layer, the light emitting element is disposed on the wiring layer in the light emitting area, the connecting member electrically connects the light emitting element and the wiring layer, the connecting member contacts the light emitting element and the lower conductive layer of the wiring layer, the backlight flexible substrate is electrically connected to the wiring layer in the non-light emitting area, the pad connecting member electrically connects the wiring layer and the backlight flexible substrate in the non-light emitting area, the pad connecting member contacts the upper conductive layer of the wiring layer, and the wavelength converter is disposed between the light emitting element and the display panel, wherein a thickness of a portion of the lower conductive layer disposed in the light emitting area is thinner than a thickness of a portion of the lower conductive layer disposed in the non-light emitting area.

[0031] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention and together with the description serve to explain the inventive concept.

[0033] Figure 1 is an exploded perspective view of a display apparatus according to an exemplary embodiment.

[0034] Figure 2 is along Figure 1 A schematic cross-sectional view of the display device taken along section line X1 - X1 ′ in FIG.

[0035] Figure 3 yes Figure 2 An enlarged cross-sectional view of portion Q1 in FIG.

[0036] Figure 4 yes Figure 2 An enlarged cross-sectional view of the wiring layer.

[0037] Figure 5 yes Figure 1 and Figure 2 A plan view of a backlight substrate is shown in FIG.

[0038] Figure 6 yes Figure 5 An enlarged plan view of any one of the light emitting groups shown in .

[0039] Figure 7 It is shown Figure 1 and Figure 2 A plan view of the reflective layer and light source of the backlight substrate shown in FIG.

[0040] Figure 8 It is along Figure 5 A cross-sectional view of the backlight substrate taken along section line X3-X3'.

[0041] Fig. 9 It is along Figure 5 A cross-sectional view of the backlight substrate taken along section line X5-X5'.

[0042] Fig.10 , Fig.11 , Fig.12 , Fig.13 , Fig.14 , Fig.15 , Fig.16 , Fig.17 , Fig.18 , Fig.19 and Fig. 20 It is used to explain the manufacturing Figure 5 A cross-sectional view of an exemplary process of a backlight substrate is shown in Fig.10 , Fig.11 , Fig.12 , Fig.14 , Fig.15 , Fig.17 , Fig.18 , Fig.19 and Fig. 20 is a step-by-step cross-sectional view. Fig.13 yes Fig.12 an enlarged cross-sectional view of portion Q3, and Fig.16 yes Fig.15 An enlarged cross-sectional view of portion Q5.

[0043] Fig.21 It is shown Figure 8 sectional view of a modified example of the backlight substrate shown in .

[0044] Fig. 22 yes Fig.21 An enlarged cross-sectional view of portion Q7.

[0045] Fig.23 It is shown Fig. 9 sectional view of a modified example of the backlight substrate shown in .

[0046] Fig.24 It is shown Figure 5 2 is a cross-sectional view of another modified example of the backlight substrate shown in FIG.

[0047] Fig.25 is along Figure 1 FIG. 1 is a cross-sectional view of a display device according to another exemplary embodiment taken along a section line X1 - X1 ′.

[0048] Fig.26 yes Fig.25 An enlarged cross-sectional view of the wiring layer.

[0049] Fig. 27 yes Fig.25 A plan view of a backlight substrate is shown in FIG.

[0050] Fig.28 yes Fig. 27 An enlarged plan view of any one of the light emitting groups shown in .

[0051] Fig.29 It is along Fig. 27 A cross-sectional view of the backlight substrate taken along section line X7-X7'.

[0052] Fig.30 It is along Fig. 27 A cross-sectional view of the backlight substrate taken along section line X9-X9'.

[0053] Fig.31 , Fig.32 , Fig.33 , Fig.34 , Fig.35 , Fig.36 and Fig.37 It is used to explain the manufacturing Fig.29 A step-by-step cross-sectional view of the process of backlight substrate is shown in FIG.

[0054] Fig.38 It is shown Fig.29 sectional view of a modified example of the backlight substrate shown in .

[0055] Fig.39 , Fig.40 , Fig.41 , Fig.42 , Fig.43 , Fig.44 , Fig.45 and Fig.46 It is used to explain the manufacturing Figure 5 A cross-sectional view of another exemplary process of a backlight substrate is shown in Fig.39 , Fig.40 , Fig.41 , Fig.42 , Fig.44 , Fig.45 and Fig.46 is a step-by-step cross-sectional view, and Fig.43 yes Fig.42 An enlarged cross-sectional view of portion Q9. DETAILED DESCRIPTION

[0056] In the following description, for the purpose of explanation, many specific details are set forth for a thorough understanding of each exemplary embodiment or embodiment of the present invention. As used herein, "embodiment" and "embodiment" are interchangeable words, which are non-limiting examples of one or more devices or methods to which the inventive concepts disclosed herein are applied. However, it is apparent that each exemplary embodiment may be implemented without these specific details or with one or more equivalent arrangements. In other cases, in order to avoid unnecessary confusion of each exemplary embodiment, known structures and devices are shown in block diagram form. In addition, each exemplary embodiment may be different, but need not be exclusive. For example, without departing from the inventive concept, the specific shape, configuration and characteristics of the exemplary embodiment may be used or performed in another exemplary embodiment.

[0057] Unless otherwise noted, the exemplary embodiments shown are understood to be exemplary features that provide different details of some ways in which the inventive concept can be implemented in practice. Therefore, unless otherwise noted, the features, components, modules, layers, films, panels, regions and / or aspects of each embodiment (hereinafter individually or collectively referred to as "elements") may be combined, separated, exchanged and / or rearranged without departing from the inventive concept.

[0058] The use of hatching and / or shading in the accompanying drawings is generally used to make the boundaries between adjacent elements clear. Thus, unless otherwise specified, the presence or absence of hatching or shading does not convey or indicate any preference or requirement for a particular material, material property, size, ratio, commonality between the elements shown, and / or any other characteristics, attributes, properties, etc. of the elements. In addition, in the accompanying drawings, the size and relative size of the elements may be exaggerated for clarity and / or descriptive purposes. When the exemplary embodiments may be performed differently, a specific process sequence may be performed differently from the described sequence. For example, two consecutively described processes may be performed substantially simultaneously or in an order opposite to the described sequence. In addition, the same reference numerals represent the same elements.

[0059] When an element such as a layer is referred to as being on another element or layer, being connected to or being coupled to another element or layer, it may be directly on the other element or layer, being connected to or being coupled to the other element or layer, or there may be an intervening element or layer. However, when an element such as a layer is referred to as being directly on another element or layer, being directly connected to or being directly coupled to another element or layer, there may not be an intervening element or layer. For this reason, the term "connection" may represent physical connection, electrical connection and / or fluid connection with or without an intermediate element. In addition, the X-axis, Y-axis and Z-axis are not limited to the three axes of a rectangular coordinate system, such as an x-axis, a y-axis and a z-axis, but can be explained with a broader meaning. For example, the X-axis, the Y-axis and the Z-axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other. For the purpose of this disclosure, "at least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" may be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z, for example, XYZ, XYY, YZ, and ZZ. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0060] Although the terms "first", "second", etc. may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. Therefore, without departing from the teachings of the present disclosure, the first element discussed below may be referred to as the second element.

[0061] Spatially relative terms, such as "beneath," "below," "under," "lower," "above," "upper," "over," "higher," "side" (e.g., as in "sidewall"), and the like, may be used herein for descriptive purposes, and thus may be used to describe the relationship of one element to another element as shown in the accompanying drawings. Spatially relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture in addition to the orientation depicted in the accompanying drawings. For example, if the device in the accompanying drawings is turned over, elements described as being "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "below" may encompass both the above and below orientations. Furthermore, the device may be otherwise oriented (e.g., rotated 90 degrees or at other orientations), and as such, the spatially relative descriptors used herein should be interpreted accordingly.

[0062] The terms used herein are for the purpose of describing specific embodiments and are not intended to be limiting. As used herein, the singular forms "a", "an", and "said" are intended to also include the plural meaning unless the context clearly indicates otherwise. In addition, the terms "comprises", "comprising", "includes", and / or "including" when used in this specification indicate the presence of the features, wholes, steps, operations, elements, components, and / or combinations thereof described, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components, and / or combinations thereof. It is also worth noting that, as used herein, the terms "substantially", "about", and other similar terms are used as approximate terms rather than as terms of degree, and as such, are used to allow for inherent deviations in measured values, calculated values, and / or provided values ​​that will be recognized by those of ordinary skill in the art.

[0063] Various exemplary embodiments are described herein with reference to cross-sectional views and / or exploded views that are schematic diagrams of idealized exemplary embodiments and / or intermediate structures. As such, variations from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are contemplated. Therefore, the exemplary embodiments disclosed herein should not necessarily be construed as limited to the specifically illustrated shapes of the regions, but rather include shape deviations due to, for example, manufacturing. In this manner, the regions shown in the accompanying drawings may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of the regions of the device, and as such, are not necessarily intended to be limiting.

[0064] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those skilled in the art to which the present disclosure belongs. Terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and should not be interpreted in an idealized or overly formal sense unless explicitly defined as such herein.

[0065] Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.

[0066] Figure 1 is an exploded perspective view of a display device according to an exemplary embodiment, Figure 2 It is along Figure 1 A schematic cross-sectional view of the display device taken along the section line X1-X1' in FIG. Figure 3 yes Figure 2 an enlarged cross-sectional view of portion Q1, and Figure 4 yes Figure 2 An enlarged cross-sectional view of the wiring layer.

[0067] Reference Figure 1 , Figure 2 , Figure 3 and Figure 4 The display device 1 as a device for displaying an image can be applied to various electronic devices, such as a tablet PC, a smart phone, a car navigation unit, a camera, a central information display (CID) of a car, a wristwatch-type electronic device, a personal digital assistant (PDA), a portable multimedia player (PMP), a game console, a television, an outdoor billboard, a monitor, a personal computer, and a notebook computer. These devices are provided only as examples, and it should be understood that the display device 1 can be applied to other electronic devices as long as it does not deviate from the concept of the present invention.

[0068] In the drawings, a first direction X, a second direction Y, and a third direction Z are defined. The first direction X and the second direction Y may be directions perpendicular to each other in a plane. The third direction Z may be a direction perpendicular to the plane where the first direction X and the second direction Y are located. The third direction Z is perpendicular to each of the first direction X and the second direction Y. In an exemplary embodiment, the third direction Z represents a thickness direction of the display device 1.

[0069] Unless otherwise specified in the exemplary embodiments, the “upper portion or upper side” in the drawings indicates the thickness direction of the display device 1 on one side (the upper side in the drawings) facing the third direction Z, and the “upper surface” in the drawings indicates the surface of the display device 1 on one side facing the third direction Z. In addition, the “lower portion or lower side” in the drawings indicates the direction opposite to the thickness direction of the display device 1 on the other side (the lower side in the drawings) facing the third direction Z, and the “lower surface” in the drawings indicates the surface of the display device 1 on the other side facing the third direction Z.

[0070] The display device 1 may have a rectangular shape including a long side and a short side, wherein in a plan view, the side in the first direction X is longer than the side in the second direction Y. In the display device 1, the corner where the long side intersects the short side may have a right angle shape, but is not limited thereto, and may also have a rounded curved shape. The planar shape of the display device 1 is not limited to the illustrated shape, and examples thereof may include a square, a circle, an ellipse, and other shapes. The display surface of the display device 1 may be defined on one side of the third direction Z as the thickness direction.

[0071] The display device 1 includes a display panel 100 and a backlight unit BLU, and may further include a panel guide 930 , a panel flexible substrate FPC1 , a driving chip IC1 , and a panel driving board DBD.

[0072] The display panel 100 may be a panel member including elements that allow the display device 1 to implement image display. In an exemplary embodiment, the display panel 100 may be a liquid crystal display panel, and may include a lower substrate 110, an upper substrate 120, and a liquid crystal layer (not shown) disposed between the lower substrate 110 and the upper substrate 120. However, the present invention is not limited thereto, and another display panel requiring a backlight unit for displaying an image may also be used at the display panel 100. The lower substrate 110 and the upper substrate 120 may be attached to each other by a sealing member (not shown) such as a sealant.

[0073] The panel flexible substrate FPC1 may electrically connect the panel driving board DBD and the display panel 100 to each other. Exemplarily, an input terminal disposed on one side of the panel flexible substrate FPC1 may be connected to the panel driving board DBD, and the other side of the panel flexible substrate FPC1 may be connected to a pad portion disposed on a lower substrate 110 of the display panel 100. In some exemplary embodiments, the panel flexible substrate FPC1 may be bent to reduce a bezel area of ​​the display device 1. For example, the panel flexible substrate FPC1 may be formed of a tape carrier package (TCP), a chip on a flexible board (COFB), or a chip on a film (COF).

[0074] In some exemplary embodiments, a plurality of panel flexible substrates FPC1 may be provided.

[0075] The driving chip IC1 may be mounted on the panel flexible substrate FPC1 and may receive pixel data and a data control signal from the panel driving board DBD, convert the pixel data into an analog data signal for each pixel according to the data control signal, and provide the analog data signal to the data line.

[0076] The panel driving board DBD may provide power and a signal for controlling the driving of the display panel 100 to the display panel 100. In some exemplary embodiments, the panel driving board DBD may include a timing controller. The panel driving board DBD may provide driving power to the driver chip IC1 and a scan driver (not shown) of the display panel 100 and a control signal for displaying an image to each pixel. In some exemplary embodiments, the panel driving board DBD may be formed of a printed circuit board.

[0077] The panel guide 930 may surround the edge of the lower surface of the display panel 100 to support and protect the display panel 100. In some exemplary embodiments, the panel guide 930 may include a sidewall 931 and a protrusion 933 protruding inward from the sidewall 931. The sidewall 931 may surround the edge of the display panel 100. The protrusion 933 may support the display panel 100. That is, the display panel 100 may be located on the protrusion 933.

[0078] In some exemplary embodiments, the panel protection member AD may be located on the side surface of the display panel 100. The panel protection member AD may protect the side surface or edge of the display panel 100. The panel protection member AD may be made of a siloxane-based or ultraviolet (UV)-based sealant (or resin). In some exemplary embodiments, the panel protection member AD may be made of a colored resin or a light-shielding resin to prevent or suppress light leakage from the side surface of the display panel 100. The panel protection member AD may be inserted into a space between the side wall 931 of the panel guide 930 and the edge of the display panel 100, and the panel protection member AD may couple the display panel 100 to the side wall 931 of the panel guide 930.

[0079] A backlight unit BLU is disposed under the display panel 100 .

[0080] The backlight unit BLU may include a backlight substrate LS, and may further include a backlight flexible substrate FPC2 , a first optical member 200 , a second optical member 300 , a backlight driving chip IC2 , a backlight driving board BBD, and a bottom chassis 910 .

[0081] The backlight substrate LS may provide light to the display panel 100 .

[0082] In some exemplary embodiments, the backlight substrate LS may include a light source substrate 400 and a light emitting element 500 , and the backlight substrate LS may further include a wavelength converter 700 and a passivation layer 800 .

[0083] The light source substrate 400 as a substrate for mounting the light emitting element 500 may include a base substrate 410 , a wiring layer 430 disposed on the base substrate 410 , and an insulating layer 450 disposed on the wiring layer 430 , and may further include a reflective layer 470 disposed on the insulating layer 450 .

[0084] The base substrate 410 may support components disposed thereon, such as a wiring layer 430 and a light emitting element 500. In some exemplary embodiments, the base substrate 410 may be a glass substrate, and may be rigid.

[0085] The wiring layer 430 is disposed on the base substrate 410. The wiring layer 430 may include wirings or conductors connected to the light emitting element 500.

[0086] The wiring layer 430 may have a structure in which a plurality of conductive layers are stacked. For example, the wiring layer 430 may have a structure in which three conductive layers are stacked. Figure 4 As shown in FIG. 4 , the wiring layer 430 may include a lower conductive layer 430 a , an intermediate conductive layer 430 b , and an upper conductive layer 430 c .

[0087] The lower conductive layer 430a may be disposed on the base substrate 410. In some exemplary embodiments, a coupling force between the lower conductive layer 430a and the base substrate 410 may be greater than a coupling force between the intermediate conductive layer 430b and the base substrate 410. That is, the lower conductive layer 430a may improve a coupling force between the wiring layer 430 and the base substrate 410.

[0088] In some exemplary embodiments, the lower conductive layer 430a may be made of titanium (Ti) or a titanium alloy. In some exemplary embodiments, the thickness THa of the lower conductive layer 430a may be 10 nm to 30 nm.

[0089] The middle conductive layer 430b may be disposed on the lower conductive layer 430a, and the middle conductive layer 430b may contact the lower conductive layer 430a. Hereinafter, the term "contact" may refer to a case where two components are physically in direct contact with each other.

[0090] In some exemplary embodiments, the middle conductive layer 430b may be made of a material having excellent conductivity to achieve a fast response speed and a stable backlight configuration. In some exemplary embodiments, the middle conductive layer 430b may include copper (Cu) or a copper alloy. In some exemplary embodiments, the thickness THb of the middle conductive layer 430b may be thicker than the thickness THa of the lower conductive layer 430a. Exemplarily, the thickness THb of the middle conductive layer 430b may be 600nm to 800nm.

[0091] The upper conductive layer 430c may be disposed on the middle conductive layer 430b, and the upper conductive layer 430c may be in contact with the middle conductive layer 430b. In some exemplary embodiments, the upper conductive layer 430c may be used as a capping layer for capping the middle conductive layer 430b. When the middle conductive layer 430b is oxidized or corroded, the conductivity of the middle conductive layer 430b may deteriorate. In particular, when the middle conductive layer 430b is made of an easily oxidizable material such as copper, the conductive property may deteriorate.

[0092] In some exemplary embodiments, the upper conductive layer 430c may be made of a conductive material having better corrosion resistance than the middle conductive layer 430b. For example, the upper conductive layer 430c may be made of titanium (Ti) or a titanium alloy. In some exemplary embodiments, the thickness THc of the upper conductive layer 430c may be 10nm to 30nm.

[0093] The insulating layer 450 may be disposed on the upper conductive layer 430c. The insulating layer 450 may provide a flat surface between the wiring layer 430 and the light emitting element 500, and may define a connection portion between the wiring layer 430 and the light emitting element 500. In some exemplary embodiments, as will be described below, the insulating layer 450 may include a first insulating layer and a second insulating layer.

[0094] The reflective layer 470 may be disposed on the insulating layer 450. The reflective layer 470 may reflect light propagating toward the opposite side of the display panel 100 among the light emitted from the light emitting element 500 and guide the light toward the display panel 100.

[0095] In some exemplary embodiments, the reflective layer 470 may be formed by printing a reflective ink on the upper surface of the insulating layer 450 using a screen mask, etc. However, the present invention is not limited thereto, and the reflective layer 470 may be formed by depositing or coating a reflective material, such as a metal, such as a metal having reflectivity, such as aluminum, silver, or gold, on the insulating layer 450.

[0096] As will be described later, the reflective layer 470 may include an opening OPN (see FIG. 1 ) formed in a portion corresponding to the light emitting element 500. Figure 7 ).

[0097] The light emitting element 500 may be disposed on the insulating layer 450. A plurality of light emitting elements 500 may be disposed on the light source substrate 400 and may be spaced apart from each other.

[0098] The light emitting element 500 may be coupled to the light source substrate 400 and may be electrically connected to the wiring layer 430. The light emitting element 500 may receive a voltage and an electrical signal (eg, a driving signal) through the wiring layer 430 to emit light.

[0099] In some exemplary embodiments, the light emitting element 500 may be a light emitting diode (LED). A detailed structure of the light emitting element 500 will be described later.

[0100] The light emitting element 500 may receive an electrical signal from the wiring layer 430 and emit light of a specific wavelength band. In some exemplary embodiments, the light emitting element 500 may emit light having a first peak wavelength range. In some exemplary embodiments, the first peak wavelength range may be approximately 420 nm to 480 nm, and the light emitted from the light emitting element 500 may be blue light.

[0101] The wavelength converter 700 may be disposed on the light emitting element 500. The wavelength converter 700 may be disposed between the light emitting element 500 and the display panel 100.

[0102] The wavelength converter 700 may convert the wavelength of light emitted from the light emitting element 500. Exemplarily, the wavelength converter 700 may convert light having a first peak wavelength emitted from the light emitting element 500 into light having a second peak wavelength longer than the first peak wavelength and light having a third peak wavelength longer than the first peak wavelength and different from the second peak wavelength. In some exemplary embodiments, the second peak wavelength may range from about 610 nm to about 670 nm, and the light having the second peak wavelength may be red light. The third peak wavelength may range from about 510 nm to about 570 nm, and the light having the third peak wavelength may be green light. Therefore, the light transmitted through the wavelength converter 700 among the light emitted from the light emitting element 500 may be white light mixed with red light, green light, and blue light.

[0103] In some exemplary embodiments, the wavelength converter 700 may cover each light emitting element 500, and adjacent wavelength converters 700 may be spaced apart from each other. Exemplarily, the wavelength converter 700 may be formed in an island shape on a plane. However, the present invention is not limited thereto. In another exemplary embodiment, the wavelength converter 700 may be disposed on a separate optical member located between the light emitting element 500 and the display panel 100.

[0104] like Figure 3 As shown in FIG. 7 , the wavelength converter 700 may include a base resin 710 and a first wavelength phase shifter 730 and a second wavelength phase shifter 750 dispersed in the base resin 710 . The wavelength converter 700 may further include a diffuser 770 dispersed in the base resin 710 .

[0105] The base resin 710 may be made of a material having high light transmittance. In some exemplary embodiments, the base resin 710 may be made of an organic material. For example, the base resin 710 may include an organic material such as epoxy resin, acrylic resin, cardo resin, or imide resin.

[0106] The diffuser 770 may have a different refractive index from the base resin 710, and the diffuser 770 may form an optical interface with the base resin 710. For example, the diffuser 770 may be light scattering particles. The diffuser 770 may be made of a material capable of scattering at least a portion of the transmitted light. Exemplarily, the diffuser 770 may be made of metal oxide particles or organic particles. Examples of metal oxides may include titanium oxide (TiO 2 ), zirconium oxide (ZrO 2 ), aluminum oxide (Al 2 O 3 ), indium oxide (In 2 O 3 ), zinc oxide (ZnO) and tin oxide (SnO 2), and examples of the material of the organic particles may include acrylic resin and polyurethane resin.

[0107] The diffuser 770 may scatter incident light in random directions without substantially converting the wavelength of light transmitted through the wavelength converter 700 .

[0108] The first wavelength phase shifter 730 may convert or shift the peak wavelength of the incident light to another specific peak wavelength. In some exemplary embodiments, the first wavelength phase shifter 730 may convert the blue light provided from the light emitting element 500 into red light having a single peak wavelength in the range of about 610nm to about 670nm.

[0109] Examples of the first wavelength phase shifter 730 may include quantum dots, quantum rods, and phosphors. For example, quantum dots may be particulate matter that emits light of a specific color when electrons transition from a conduction band to a valence band.

[0110] Quantum dots can be semiconductor nanocrystal materials. Depending on the composition and size of the quantum dots, the quantum dots can have a specific band gap to absorb light and then emit light with a unique wavelength. Examples of semiconductor nanocrystals of quantum dots can include IV group compound nanocrystals, II-VI group compound nanocrystals, III-V group compound nanocrystals, IV-VI group compound nanocrystals, and combinations thereof.

[0111] The II-VI compounds may be selected from the following: binary compounds selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; binary compounds selected from the group consisting of InZnP, AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnP, CdZnS, CdZnSe, CdZnS ... Ternary compounds selected from the group consisting of CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof; and quaternary compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof.

[0112] The III-V compounds can be selected from the following: binary compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaAlNP, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof.

[0113] The IV-VI group compound may be selected from the following: a binary compound selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof; a ternary compound selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof; and a quaternary compound selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof. The IV group element may be selected from the group consisting of Si, Ge and mixtures thereof. The IV group compound may be a binary compound selected from the group consisting of SiC, SiGe and mixtures thereof.

[0114] In this case, the binary, ternary or quaternary compound may be present in particulate form at a uniform concentration, or may be present in particulate form by being partially divided by a concentration profile. A core-shell structure may be provided in which one quantum dot surrounds another quantum dot. The interface between the core and the shell may have a concentration gradient in which the concentration of the element in the shell decreases toward the center.

[0115] In some exemplary embodiments, the quantum dot may have a core-shell structure including a core containing the aforementioned nanocrystals and a shell surrounding the core. The shell of the quantum dot may be used as a protective layer for preventing or inhibiting the chemical denaturation of the core to maintain semiconductor properties and / or as a charging layer for imparting electrophoretic properties to the quantum dot. The shell may be a single layer or multiple layers. The interface between the core and the shell may have a concentration gradient, wherein the concentration of the element in the shell decreases toward the center. Examples of the shell of the quantum dot include metal or non-metal oxides, semiconductor compounds, or combinations thereof.

[0116] Examples of metal or nonmetal oxides may include, but are not limited to, binary compounds such as SiO 2 、Al 2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 and NiO; ternary compounds such as MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2 O 4 、CoMn 2 O 4 wait.

[0117] Examples of semiconductor compounds may include, but are not limited to, CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, and AlSb.

[0118] The light emitted by the first wavelength phase shifter 730 may have a full width at half maximum (FWHM) of about 45 nm or less, about 40 nm or less, or about 30 nm or less. The light emitted by the first wavelength phase shifter 730 may be emitted in various directions regardless of the incident direction of the incident light. Therefore, the side visibility of the display device 1 may be improved.

[0119] The second wavelength phase shifter 750 may convert or shift the peak wavelength of the incident light to another specific peak wavelength. In some exemplary embodiments, the second wavelength phase shifter 750 may convert the blue light provided by the light emitting element 500 into green light having a peak wavelength in the range of 510nm to 570nm.

[0120] Examples of the second wavelength shifter 750 may include quantum dots, quantum rods, and phosphors. A more detailed description of the second wavelength shifter 750 is substantially the same as or similar to that described above when describing the first wavelength shifter 730, and thus will be omitted.

[0121] In some exemplary embodiments, both the first wavelength phase shifter 730 and the second wavelength phase shifter 750 may be formed of quantum dots. In this case, the particle size of the quantum dots forming the first wavelength phase shifter 730 may be larger than the particle size of the quantum dots forming the second wavelength phase shifter 750.

[0122] The passivation layer 800 may be disposed on the wavelength converter 700. The passivation layer 800 may cover the wavelength converter 700. In some exemplary embodiments, the passivation layer 800 may be disposed on the entire surface of the light source substrate 400 to completely cover the wavelength converter 700.

[0123] The passivation layer 800 can prevent or inhibit moisture, oxygen, and other impurities from penetrating into the wavelength converter 700 from the outside. That is, the passivation layer 800 can prevent or protect the wavelength converter 700 from being damaged or contaminated by external factors. In some exemplary embodiments, the passivation layer 800 can be made of a light-transmitting inorganic material. For example, the passivation layer 800 can be made of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, or silicon oxynitride.

[0124] The backlight flexible substrate FPC2 may electrically connect the backlight driving board BBD and the backlight substrate LS to each other. Exemplarily, an input terminal provided on one side of the backlight flexible substrate FPC2 may be connected to the backlight driving board BBD, and the other side of the backlight flexible substrate FPC2 may be connected to a pad included in the wiring layer 430 of the backlight substrate LS. In some exemplary embodiments, the backlight flexible substrate FPC2 may be bent in a downward direction of the backlight unit BLU. For example, the backlight flexible substrate FPC2 may be formed of a tape carrier package (TCP), a chip on a flexible board (COFB), or a chip on a film (COF).

[0125] In some exemplary embodiments, a plurality of backlight flexible substrates FPC2 may be provided.

[0126] The backlight driver chip IC2 may be mounted on the backlight flexible substrate FPC2. The backlight driver chip IC2 may receive a control signal for driving the backlight unit BLU or a control signal for controlling the light emitting element 500 from the backlight driving board BBD, process the signals, and provide the processed signals to the backlight substrate LS.

[0127] The backlight driving board BBD may provide power and a signal for controlling the driving of the backlight substrate LS to the backlight substrate LS. In some exemplary embodiments, the backlight driving board BBD may generate a control signal for local dimming driving or local boost driving of the backlight substrate LS. In some exemplary embodiments, the backlight driving board BBD may be formed of a printed circuit board, and the backlight driving board BBD may include a power supply unit for providing power or voltage to the light emitting element 500.

[0128] The first optical member 200 may be disposed on the backlight substrate LS. In some exemplary embodiments, the first optical member 200 may be a diffusion plate or a diffusion sheet. The first optical member 200 may be used to diffuse light provided from the backlight substrate LS, thereby providing more uniform light to the display panel 100.

[0129] The second optical member 300 may be disposed on the first optical member 200. The second optical member 300 may perform optical functions such as focusing, refraction, diffusion, reflection, polarization, and phase delay for incident light. Examples of the second optical member 300 may include a prism film, a microlens film, a lenticular lens film, a polarizing film, a reflective polarizing film, a delay film, and a protective film. In some exemplary embodiments, the second optical member 300 may include a plurality of optical films. Alternatively, the second optical member 300 may be formed by a composite sheet in which a layer having a plurality of optical functions is integrated.

[0130] The bottom chassis 910 may receive the backlight substrate LS. In some exemplary embodiments, the bottom chassis 910 may include a bottom portion 911 and a sidewall portion 913 .

[0131] In some exemplary embodiments, the bottom chassis 910 may include a material having a predetermined rigidity and excellent thermal conductivity. For example, the bottom chassis 910 may include a metal material such as iron, copper, aluminum, or an alloy thereof. In some exemplary embodiments, the surface of the bottom chassis 910 may be plated or coated with zinc or the like. Since the bottom chassis 910 is made of a material having excellent thermal conductivity, heat generated from the backlight substrate LS or the light emitting element 500 may be discharged to the outside through the bottom chassis 910.

[0132] In some exemplary embodiments, the backlight substrate LS may be disposed in a space defined by the bottom portion 911 and the sidewall portion 913 , and the first optical member 200 and the second optical member 300 may be disposed on the sidewall portion 913 .

[0133] Figure 5 yes Figure 1 and Figure 2 A plan view of a backlight substrate shown in FIG. 1 , showing wiring layers, light emitting elements and wavelength converters, Figure 6 yes Figure 5an enlarged plan view of any one of the light-emitting groups shown in, Figure 7 It is shown Figure 1 and Figure 2 A plan view of the reflective layer of the backlight substrate and the light source shown in FIG. Figure 8 It is along Figure 5 A cross-sectional view of the backlight substrate taken along the section line X3-X3', Fig. 9 It is along Figure 5 A cross-sectional view of the backlight substrate taken along section line X5-X5'.

[0134] Reference Figure 5 , Figure 6 , Figure 7 and Figure 8 , the light emitting area LA and the non-light emitting area NLA may be defined in the base substrate 410. The light emitting area LA may be an area in which the light emitting element 500 is disposed to provide light to the display panel 100. The non-light emitting area NLA is an area in which the light emitting element 500 is not disposed and does not emit light. In some exemplary embodiments, the non-light emitting area NLA may be located around the light emitting area LA and may surround the light emitting area LA.

[0135] A light emitting element 500 may be provided in the light emitting area LA, and a plurality of light emitting elements 500 may be arranged in the light emitting area LA. In some exemplary embodiments, each of the light emitting elements 500 may be connected to the wiring layer 430 by a first connection member SR1 and a second connection member SR2. In some exemplary embodiments, the first connection member SR1 and the second connection member SR2 may be solder bumps. That is, in some exemplary embodiments, the light emitting element 500 may be soldered to the wiring layer 430 by a flip chip bonding method, but the present invention is not limited thereto.

[0136] In some exemplary embodiments, a width WL1 of each light emitting element 500 in the first direction X on a plane may be 100 μm to 700 μm. In addition, a width WL2 of each light emitting element 500 in the second direction Y on a plane may be 100 μm to 700 μm.

[0137] The light emitting element 500 may include a base portion 510 , a first conductive semiconductor layer 521 , a second conductive semiconductor layer 522 , an active material layer 530 , a first electrode 561 , and a second electrode 562 , and may further include an auxiliary layer 550 .

[0138] The base portion 510 may support a semiconductor crystal of the light emitting element 500. In an exemplary embodiment, the base portion 510 may be a transparent substrate. In some exemplary embodiments, the base portion 510 may be a sapphire substrate or a glass substrate. However, the present invention is not limited thereto, and the base portion 510 may include a material such as GaN, SiC, ZnO, Si, GaP, or GaAs.

[0139] The first conductive semiconductor layer 521 is disposed on the base portion 510. In some exemplary embodiments, the first conductive semiconductor layer 521 may be an n-type semiconductor layer. Exemplarily, when the light emitting element 500 emits blue light, the first conductive semiconductor layer 521 may include a semiconductor layer having a chemical formula of In x Al y Ga 1-x-y The first conductive semiconductor layer 521 may include a semiconductor material of N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). For example, the first conductive semiconductor layer 521 may include at least one of InAlGaN, GaN, AlGaN, InGaN, AlN, and InN doped with an n-type dopant. The first conductive semiconductor layer 521 may be doped with a first conductive dopant. For example, the first conductive dopant may be Si, Ge, Sn, etc.

[0140] The first conductive semiconductor layer 521 may have a shape in which at least a portion of one surface of the first conductive semiconductor layer 521 is recessed inwardly. The auxiliary layer 550 may be disposed on the recessed upper surface of the first conductive semiconductor layer 521, and the first electrode 561 may be disposed on the auxiliary layer 550. The auxiliary layer 550 may compensate for a step between the first electrode 561 and the second electrode 562 disposed on the second conductive semiconductor layer 522. In some exemplary embodiments, the auxiliary layer 550 may include a conductive material or a semiconductor material, and the auxiliary layer 550 may transmit an electrical signal applied to the first electrode 561 to the first conductive semiconductor layer 521.

[0141] The second conductive semiconductor layer 522 may be a p-type semiconductor layer. For example, when the light emitting element 500 emits blue light, the second conductive semiconductor layer 522 may include a semiconductor layer having a chemical formula of In x Al y Ga 1-x-y N (0≤x≤1, 0≤y≤1, 0≤x+y≤1). For example, the second conductive semiconductor layer 522 may include at least one of InAlGaN, GaN, AlGaN, InGaN, AlN, and InN doped with a p-type dopant. The second conductive semiconductor layer 522 may be doped with a second conductive dopant. For example, the second conductive dopant may be Mg, Zn, Ca, Se, Ba, etc.

[0142] The active material layer 530 is disposed between the first conductive semiconductor layer 521 and the second conductive semiconductor layer 522. The active material layer 530 may include a material having a single quantum well structure or a multi-quantum well structure. When the active material layer 530 includes a material having a single quantum well structure or a multi-quantum well structure, the active material layer 530 may have a structure in which a plurality of quantum layers and a plurality of well layers are alternately stacked. According to an electrical signal applied through the first conductive semiconductor layer 521 and the second conductive semiconductor layer 522, the active material layer 530 may emit light by the combination of electron-hole pairs. For example, when the light emitting element 500 emits blue light, the active material layer 530 may include a material such as AlGaN or AlInGaN. In particular, when the active material layer 530 has a multi-quantum well structure in which quantum layers and well layers are alternately stacked, the quantum layers may include materials such as AlGaN or AlInGaN, and the well layers may include materials such as GaN or AlGaN. However, the present invention is not limited thereto, and the active material layer 530 may include other III-group to V-group semiconductor materials depending on the wavelength band of the emitted light.

[0143] The first electrode 561 may be disposed on the auxiliary layer 550, and the second electrode 562 may be disposed on the second conductive semiconductor layer 522. The first electrode 561 and the second electrode 562 may be made of a conductive material such as metal.

[0144] In some exemplary embodiments, the first electrode 561 may be electrically connected to the wiring layer 430 through the first connection member SR1, and the second electrode 562 may be electrically connected to the wiring layer 430 through the second connection member SR2. The first electrode 561 and the second electrode 562 may transmit an electrical signal such as a voltage provided from the wiring layer 430 to the first conductive semiconductor layer 521 and the second conductive semiconductor layer 522.

[0145] In some exemplary embodiments, the first electrode 561 may be a positive electrode (or an anode electrode), and the second electrode 562 may be a negative electrode (or a cathode electrode).

[0146] In some exemplary embodiments, two or more light emitting elements 500 may constitute a light emitting block BL. A plurality of light emitting blocks BL may be arranged in the light emitting area LA, and each of the light emitting blocks BL may include a plurality of light emitting elements 500. In some exemplary embodiments, the light emitting elements 500 included in one light emitting block BL may be connected in series to each other. For example, Figure 5 As shown in , one light-emitting block BL may include four light-emitting elements 500 connected in series to each other. However, the present invention is not limited thereto, and the number of light-emitting elements 500 included in one light-emitting block BL may be variously changed. Hereinafter, for the convenience of explanation, a case where the light-emitting block BL includes four light-emitting elements 500 will be described as an example.

[0147] The wiring layer 430 may be disposed on the base substrate 410, and the insulating layer 450 and the reflective layer 470 may be disposed on the wiring layer 430. The aforementioned light emitting element 500 or the aforementioned light emitting block BL may be disposed on the insulating layer 450 or the reflective layer 470.

[0148] In some exemplary embodiments, the wiring layer 430 may include first to second conductive patterns 431 , 433 , third to fourth to fifth conductive patterns 435 , 437 , 439 , first to second pads P1 , P2 , first to second connection patterns CL1 , and CL2 .

[0149] The first conductive pattern 431, the second conductive pattern 433, the third conductive pattern 435, the fourth conductive pattern 437, and the fifth conductive pattern 439 may be arranged in the light emitting area LA, and the first conductive pattern 431, the second conductive pattern 433, the third conductive pattern 435, the fourth conductive pattern 437, and the fifth conductive pattern 439 may be spaced apart from each other. In some exemplary embodiments, the second conductive pattern 433 may be spaced apart from the first conductive pattern 431 and the third conductive pattern 435 along the second direction Y. Similarly, the fourth conductive pattern 437 may be spaced apart from the fifth conductive pattern 439 and the third conductive pattern 435 along the second direction Y. The second conductive pattern 433 and the fourth conductive pattern 437 may be disposed to face each other along the first direction X. However, the second conductive pattern 433 and the fourth conductive pattern 437 may be spaced apart from each other.

[0150] In some exemplary embodiments, an interval Wa between the second conductive pattern 433 and the fourth conductive pattern 437 measured along the first direction X may be greater than a width WL1 of the light emitting element 500 measured along the first direction X.

[0151] In some exemplary embodiments, the first conductive pattern 431 may be independently connected to each light-emitting block BL and may provide a driving voltage to each light-emitting block BL. In some exemplary embodiments, the fifth conductive pattern 439 may be connected to two or more light-emitting blocks BL and may provide a common voltage to each light-emitting block BL.

[0152] In the following exemplary embodiments, the term “connected” may mean physically contacted and / or electrically connected.

[0153] The connection relationship between the light emitting elements 500 and the wiring layer 430 included in the light emitting block BL is explained. When any one of the four light emitting elements 500 is referred to as a first light emitting element, the first electrode 561 of the first light emitting element may be electrically connected to the first conductive pattern 431, and the second electrode 562 of the first light emitting element may be connected to one side of the second conductive pattern 433. When another one of the four light emitting elements 500 is referred to as a second light emitting element, the first electrode 561 of the second light emitting element may be connected to the other side of the second conductive pattern 433, and the second electrode 562 of the second light emitting element may be connected to one side of the third conductive pattern 435. When another one of the light emitting elements 500 is referred to as a third light emitting element, the first electrode 561 of the third light emitting element may be connected to the same side of the third conductive pattern 435 at the other end of the third conductive pattern 435 opposite to the end to which the second electrode 562 of the second light emitting element is connected, and the second electrode 562 of the third light emitting element may be connected to one side of the fourth conductive pattern 437. When another one of the four light emitting elements 500 is referred to as a fourth light emitting element, the first electrode 561 of the fourth light emitting element may be connected to the other side of the fourth conductive pattern 437, and the second electrode 562 of the fourth light emitting element may be connected to the fifth conductive pattern 439. The four light emitting elements in the light emitting block BL may be connected in series through the above connection relationship.

[0154] In some exemplary embodiments, when one of the plurality of light-emitting blocks BL is referred to as a first light-emitting block and a light-emitting block other than the first light-emitting block among the plurality of light-emitting blocks BL may be referred to as a second light-emitting block, the size or shape of the conductive pattern of the light-emitting element connected to the first light-emitting block may be different from the size or shape of the conductive pattern of the light-emitting element connected to the second light-emitting block. Exemplarily, based on the accompanying drawings, when a light-emitting block adjacent to the first pad P1 and the second pad P2 is referred to as a first light-emitting block and a light-emitting block spaced apart from the first pad P1 and the second pad P2 in the second direction Y relative to the first light-emitting block is referred to as a second light-emitting block, the size or shape of the third conductive pattern 435 connected to the light-emitting element of the first light-emitting block may be different from the size or shape of the third conductive pattern 435 connected to the light-emitting element of the second light-emitting block. According to an exemplary embodiment, for each light-emitting block, the size or shape of each second conductive pattern 433, the size or shape of each fourth conductive pattern 437, and the size or shape of each first conductive pattern 431 may be different from each other.

[0155] However, this is merely an example, and sizes or shapes of conductive patterns of the light emitting elements connected to each light emitting block may be identical to each other.

[0156] The first pad P1 and the second pad P2 may be disposed in the non-light emitting area NLA and may be spaced apart from each other. The first pad P1 may be connected to the backlight flexible substrate FPC2 through a pad connection member AP such as an anisotropic conductive film. The first pad P1 may receive a driving voltage through the backlight flexible substrate FPC2. The second pad P2 may be connected to the backlight flexible substrate FPC2 or an external circuit through a pad connection member AP such as an anisotropic conductive film to receive a common voltage.

[0157] That is, a driving voltage may be provided to the first pad P1, and a common voltage may be provided to the second pad P2. Therefore, each light emitting element 500 connected in series in the light emitting block BL may emit light (e.g., blue light). A portion of the blue light emitted from the light emitting element 500 may be converted into red light and green light by the wavelength converter 700, and another portion of the blue light emitted from the light emitting element 500 may pass through the wavelength converter 700 without converting the wavelength of the blue light by the wavelength converter 700. Therefore, the wavelength converter 700 may emit white light as a mixture of blue light, green light, and red light.

[0158] In some exemplary embodiments, the number of first pads P1 may be provided to be the same as the number of light-emitting blocks BL or the number of first conductive patterns 431. In some exemplary embodiments, a plurality of second pads P2 may be provided, but the present invention is not limited thereto, and only one second pad P2 may be provided.

[0159] The first connection pattern CL1 may electrically connect the first conductive pattern 431 and the first pad P1. In some exemplary embodiments, one side of the first connection pattern CL1 may be connected to the first conductive pattern 431, and the other side of the first connection pattern CL1 may be connected to the first pad P1.

[0160] The second connection pattern CL2 may electrically connect the fifth conductive pattern 439 and the second pad P2. In some exemplary embodiments, one side of the second connection pattern CL2 may be connected to the fifth conductive pattern 439, and the other side of the second connection pattern CL2 may be connected to the second pad P2.

[0161] The first connection pattern CL1 and the second connection pattern CL2 may generally be disposed in the non-light emitting area NLA. That is, each of the first connection pattern CL1 and the second connection pattern CL2 may include a portion located in the non-light emitting area NLA. In some exemplary embodiments, a portion of the first connection pattern CL1 and a portion of the second connection pattern CL2 may be located in the light emitting area LA.

[0162] As mentioned above Figure 4As described, the wiring layer 430 includes a lower conductive layer 430a, an intermediate conductive layer 430b, and an upper conductive layer 430c. Therefore, in some exemplary embodiments, each of the first conductive pattern 431, the second conductive pattern 433, the third conductive pattern 435, the fourth conductive pattern 437, the fifth conductive pattern 439, the first pad P1, the second pad P2, the first connection pattern CL1, and the second connection pattern CL2 may also include three conductive layers.

[0163] Specifically, the first conductive pattern 431 may include a first lower conductive pattern 431a, a first middle conductive pattern 431b, and a first upper conductive pattern 431c overlapping each other. The second conductive pattern 433 may include a second lower conductive pattern 433a, a second middle conductive pattern 433b, and a second upper conductive pattern 433c overlapping each other. The third conductive pattern 435 may include a third lower conductive pattern 435a, a third middle conductive pattern 435b, and a third upper conductive pattern 435c overlapping each other. The fourth conductive pattern 437 may include a fourth lower conductive pattern 437a, a fourth middle conductive pattern 437b, and a fourth upper conductive pattern 437c overlapping each other. The fifth conductive pattern 439 may include a fifth lower conductive pattern 439a, a fifth middle conductive pattern 439b, and a fifth upper conductive pattern 439c overlapping each other. The first pad P1 may include a first lower pad pattern P1a, a first middle pad pattern P1b, and a first upper pad pattern P1c overlapping each other. Similar to the first pad P1, the second pad P2 may have a three-layer structure. The first connection pattern CL1 may include a first lower connection pattern CL1a, a first middle connection pattern CL1b, and a first upper connection pattern CL1c overlapping each other. Similar to the first connection pattern CL1, the second connection pattern CL2 may have a three-layer structure.

[0164] That is, the lower conductive layer 430a may include first, second, third, fourth, and fifth lower conductive patterns 431a, 433a, 435a, 437a, 439a, first lower pad patterns P1a, and first lower connection patterns CL1a.

[0165] In addition, the intermediate conductive layer 430b may include first, second, third, fourth, and fifth intermediate conductive patterns 431b, 433b, 435b, 437b, and 439b, first intermediate pad patterns P1b, and first intermediate connection patterns CL1b.

[0166] In addition, the upper conductive layer 430c may include a first upper conductive pattern 431c, a second upper conductive pattern 433c, a third upper conductive pattern 435c, a fourth upper conductive pattern 437c, a fifth upper conductive pattern 439c, a first upper pad pattern P1c, and a first upper connection pattern CL1c.

[0167] In some exemplary embodiments, a minimum interval between lower conductive patterns included in the lower conductive layer 430 a may be greater than a minimum interval between upper conductive patterns included in the upper conductive layer 430 c .

[0168] The insulating layer 450 may be disposed on the wiring layer 430. In some exemplary embodiments, the insulating layer 450 may be disposed in both the light emitting area LA and the non-light emitting area NLA.

[0169] The insulating layer 450 may planarize the upper side of the wiring layer 430 and protect the wiring layer 430 .

[0170] In some exemplary embodiments, the insulating layer 450 may include a first insulating layer 450 a on the wiring layer 430 and a second insulating layer 450 b on the first insulating layer 450 a .

[0171] The first insulating layer 450a may cover the wiring layer 430 to protect the wiring layer 430. In some exemplary embodiments, the first insulating layer 450a may be made of an inorganic insulating material. For example, the first insulating layer 450a may be made of silicon nitride, silicon oxide, silicon oxynitride, or the like.

[0172] The second insulating layer 450b may provide a flat surface to the upper side of the wiring layer 430. In some exemplary embodiments, the second insulating layer 450b may be made of an organic insulating material. For example, the second insulating layer 450b may be made of a photosensitive organic insulating material such as acrylic resin.

[0173] In the light emitting area LA, a contact hole CH exposing the middle conductive layer 430 b of the wiring layer 430 may be defined in the upper conductive layer 430 c of the wiring layer 430 and the insulating layer 450 .

[0174] In some exemplary embodiments, the contact hole CH may be formed to expose each of both sides of the second intermediate conductive pattern 433b, both sides of the third intermediate conductive pattern 435b, both sides of the fourth intermediate conductive pattern 437b, one side of the first intermediate conductive pattern 431b, and one side of the fifth intermediate conductive pattern 439b.

[0175] In the non-light emitting area NLA, a pad contact hole CHP exposing the upper conductive layer 430 c of the wiring layer 430 or the first upper pad pattern P1 c may be defined in the insulating layer 450 .

[0176] The reflective layer 470 may be disposed on the insulating layer 450. In some exemplary embodiments, the reflective layer 470 may be disposed in the light emitting area LA, and may not be disposed in the non-light emitting area NLA. Figure 7 As shown in , an opening OPN may be formed in a portion of the reflective layer 470 corresponding to the light emitting element 500 .

[0177] The reflective layer 470 may be directly disposed on the insulating layer 450, and the reflective layer 470 may contact the insulating layer 450. In some exemplary embodiments, as described above, the reflective layer 470 may be formed by printing reflective ink on the insulating layer 450 through screen masking, but the present invention is not limited thereto.

[0178] The first and second connection members SR1 and SR2 may be disposed in the contact holes CH, and the first and second connection members SR1 and SR2 may make contact with the intermediate conductive layer 430 b of the wiring layer 430 .

[0179] In the light emitting area LA, the light emitting element 500 may be electrically connected to the wiring layer 430 through the first and second connection members SR1 and SR2. In some exemplary embodiments, the first electrode 561 of the light emitting element 500 may contact the first connection member SR1, and the second electrode 562 of the light emitting element 500 may contact the second connection member SR2.

[0180] When any one of the four light emitting elements 500 is referred to as a first light emitting element, a first electrode 561 of the first light emitting element may be electrically connected to the first conductive pattern 431 through a first connection member SR1, and a second electrode 562 of the first light emitting element may be connected to one side of the second conductive pattern 433 through a second connection member SR2. When another one of the four light emitting elements 500 is referred to as a second light emitting element, a first electrode 561 of the second light emitting element may be connected to the other side of the second conductive pattern 433 through a first connection member SR1, and a second electrode 562 of the second light emitting element may be connected to one side of the third conductive pattern 435 through a second connection member SR2. When another one of the four light emitting elements 500 is referred to as a third light emitting element, a first electrode 561 of the third light emitting element may be connected to the same side of the third conductive pattern 435 at the other end of the third conductive pattern 435 opposite to the end to which the second electrode 562 of the second light emitting element is connected through a first connection member SR1, and a second electrode 562 of the third light emitting element may be connected to one side of the fourth conductive pattern 437 through a second connection member SR2. When another of the four light emitting elements 500 is referred to as a fourth light emitting element, the first electrode 561 of the fourth light emitting element may be connected to the other side of the fourth conductive pattern 437 via a first connection member SR1, and the second electrode 562 of the fourth light emitting element may be connected to the fifth conductive pattern 439 via a second connection member SR2.

[0181] In some exemplary embodiments, the coupling force between the first connection member SR1 and the intermediate conductive layer 430b and between the second connection member SR2 and the intermediate conductive layer 430b may be greater than the coupling force between the first connection member SR1 and the upper conductive layer 430c and between the second connection member SR2 and the upper conductive layer 430c. Exemplarily, when the first connection member SR1 and the second connection member SR2 are solder bumps made of solder, the intermediate conductive layer 430b is made of copper or a copper alloy, and the upper conductive layer 430c is made of titanium or a titanium alloy, the bonding force between the solder and the copper (or copper alloy) may be greater than the bonding force between the solder and the titanium (or titanium alloy). In this exemplary embodiment, a portion of the upper conductive layer 430c is removed to expose the intermediate conductive layer 430b, and the first connection member SR1 and the second connection member SR2 are coupled to the exposed intermediate conductive layer 430b, so that the connection reliability between the light emitting element 500 and the wiring layer 430 can be improved.

[0182] A capping layer CPL may be disposed on each light emitting element 500. The capping layer CPL may cover the light emitting element 500 to protect the light emitting element 500. The capping layers CPL covering the respective light emitting elements 500 may be spaced apart from each other, but the present invention is not limited thereto.

[0183] In some exemplary embodiments, at least a portion of the capping layer CPL may be disposed on the reflective layer 470. In other words, a portion of the reflective layer 470 may be disposed between the capping layer CPL and the insulating layer 450.

[0184] In some exemplary embodiments, when a space is formed between the light emitting element 500 and the insulating layer 450 , the capping layer CPL may fill the space between the light emitting element 500 and the insulating layer 450 .

[0185] In some exemplary embodiments, the capping layer CPL may be made of an insulating material, and the capping layer CPL may be made of an organic insulating material or an inorganic insulating material. Exemplarily, the capping layer CPL may be made of a silicone resin, but the material thereof is not limited thereto.

[0186] The wavelength converter 700 may be disposed on the capping layer CPL. In some exemplary embodiments, the wavelength converter 700 may be in contact with the capping layer CPL. The wavelength converter 700 may cover each of the light emitting elements 500, and adjacent wavelength converters 700 may be spaced apart from each other. The wavelength converter 700 may be patterned only on a portion corresponding to the light emitting element 500, thereby reducing material costs.

[0187] In some exemplary embodiments, a portion of the wavelength converter 700 may be in contact with the reflective layer 470 .

[0188] A passivation layer 800 covering the wavelength converter 700 may be disposed on the wavelength converter 700. In some exemplary embodiments, the passivation layer 800 may be disposed in the light emitting area LA, but the passivation layer 800 may not be disposed in the non-light emitting area NLA.

[0189] In the non-light emitting area NLA, the pad connection member AP may be disposed in the pad contact hole CHP, and the pad connection member AP may contact the upper conductive layer 430c or the first upper pad pattern P1c of the first pad P1 in the pad contact hole CHP.

[0190] The first pads P1 may be electrically connected to the backlight flexible substrate FPC2 through the pad connection member AP. In some exemplary embodiments, the pad connection member AP may be an anisotropic conductive film.

[0191] Unlike the light-emitting area LA, in the non-light-emitting area NLA, the intermediate conductive layer 430b is not exposed to the outside. Therefore, in the non-light-emitting area NLA that can be exposed to external moisture / oxygen relative to the light-emitting area LA, the intermediate conductive layer 430b can be protected by the upper conductive layer 430c, thereby preventing or reducing oxidation or corrosion of the intermediate conductive layer 430b.

[0192] Typically, a pad connection pattern made of ITO or the like is additionally formed on the pad to prevent or inhibit corrosion or oxidation of the pad. According to the present exemplary embodiment, corrosion / oxidation of the pad can be prevented or reduced without forming an additional pad connection pattern in addition to the wiring layer 430, thereby simplifying the structure and manufacturing process of the backlight substrate LS.

[0193] Fig.10 , Fig.11 , Fig.12 , Fig.13 , Fig.14 , Fig.15 , Fig.16 , Fig.17 , Fig.18 , Fig.19 and Fig. 20 It is used to explain the manufacturing Figure 5 A cross-sectional view of an exemplary process of a backlight substrate is shown in Fig.10 , Fig.11 , Fig.12 , Fig.14 , Fig.15 , Fig.17 , Fig.18 , Fig.19 and Fig. 20 is a step-by-step cross-sectional view. Fig.13 yes Fig.12 An enlarged cross-sectional view of part Q3, Fig.16 yes Fig.15 An enlarged cross-sectional view of portion Q5.

[0194] Reference Fig.10 , Fig.11 , Fig.12 , Fig.13 , Fig.14 , Fig.15 , Fig.16 , Fig.17 , Fig.18 , Fig.19 and Fig. 20 , first, if Fig.10 As shown in FIG. 1 , a first conductive material layer 43a, a second conductive material layer 43b, and a third conductive material layer 43c are sequentially deposited on a base substrate 410. Examples of materials for forming each of the first conductive material layer 43a, the second conductive material layer 43b, and the third conductive material layer 43c may be the same as those already described above with reference to Figure 4 The lower conductive layer ( Figure 4 430a in), the middle conductive layer ( Figure 4 430b) and the upper conductive layer ( Figure 4 The examples of materials for each of 430c) are the same.

[0195] Then, a photosensitive organic layer is formed on the third conductive material layer 43c, exposed to light, and developed to form an organic layer pattern PR. The exposure / development process of the photosensitive organic layer for forming the organic layer pattern PR may be performed using a full-tone mask including a light blocking unit and a light transmitting unit.

[0196] The organic layer pattern PR may have a substantially constant thickness. The organic layer pattern PR may be formed at Figure 5 and Figure 8 The wiring layer shown in ( Figure 5 and Figure 8 430) in the corresponding portion, and may not be formed in the Figure 8 The contact holes shown in ( Figure 8 CH) in the corresponding part.

[0197] Then, if Fig.11 As shown in FIG. 4 , the third conductive material layer 43c is patterned using the organic layer pattern PR as a mask. The third conductive material layer 43c may be patterned by a dry etching process, and the second conductive material layer 43b may not be etched during the patterning of the third conductive material layer 43c.

[0198] Then, if Fig.12 As shown in FIG, the second conductive material layer 43b is patterned using the organic layer pattern PR and the patterned third conductive material layer 43c as a mask. The second conductive material layer 43b may be patterned by a wet etching process using an etching solution, and the first conductive material layer 43a and the third conductive material layer 43c having different etching selectivities based on the etching solution may not be etched.

[0199] Since the second conductive material layer 43b is patterned by the wet etching process, Fig.13 As shown in FIG. 4 , a space SP may be formed between the lower surface 43c1 of the third conductive material layer 43c and the second conductive material layer 43b along the third direction Z. That is, a convex pattern 43ct may be formed in the third conductive material layer 43c. The convex pattern 43ct may be defined as a portion where the lower surface 43c1 of the third conductive material layer 43c does not contact the second conductive material layer 43b.

[0200] Then, if Fig.14 As shown in FIG. 4 , the first conductive material layer 43a is patterned using the organic layer pattern PR and the patterned second conductive material layer 43b as a mask. The first conductive material layer 43a may be patterned through a dry etching process.

[0201] Then, if Fig.15As shown in FIG. 4 , the upper surface of the third conductive material layer 43c is exposed by ashing the organic layer pattern PR. The organic layer residual pattern PR11 may remain on the third conductive material layer 43c. The organic layer residual pattern PR11 may be a portion of the organic layer pattern PR that remains without being removed during the ashing process.

[0202] Since the organic layer residual pattern PR11 is a pattern in which a portion of the organic layer pattern PR remains, the width of the organic layer residual pattern PR11 may be narrower than that of the organic layer pattern PR. Therefore, the convex pattern 43ct of the third conductive material layer 43c may be partially or entirely exposed without being covered by the organic layer residual pattern PR11.

[0203] Next, the protrusion pattern 43ct of the third conductive material layer 43c is removed using the organic layer residual pattern PR11 as a mask. Fig.15 and Fig.16 As shown in , the protrusion pattern 43ct may be removed by a dry etching process. Therefore, after the etching process is completed, the distance D1 between adjacent first conductive material layers 43a may be smaller than the distance D2 between adjacent third conductive material layers 43c.

[0204] Then, the organic layer residual pattern PR11 is removed.

[0205] Then, if Fig.17 As shown in FIG. 4 , a first insulating material layer 45a is formed on the third conductive material layer 43c. The first insulating material layer 45a may be formed over the entire surface of the base substrate 410 and may be made of an inorganic insulating material.

[0206] Then, a photosensitive organic layer is applied onto the first insulating material layer 45a, the photosensitive organic layer is exposed to light, and the photosensitive organic layer is developed to form a second insulating material layer 45b. The exposure / development process of the photosensitive organic layer for forming the second insulating material layer 45b may be performed using a mask including a light blocking unit and a light transmitting unit (e.g., a full-tone mask).

[0207] The second insulating material layer 45b may be disposed in addition to the above reference Figure 8 Contact holes described ( Figure 8 The second insulating material layer 45b may include a first portion 45b1 and a second portion 45b2 thinner than the first portion 45b1. That is, the second insulating material layer 45b having a step may be formed using a halftone mask. The second portion 45b2 may be formed in the same manner as in the above reference. Figure 8 Described pad contact hole ( Figure 8 The corresponding part of CHP in .

[0208] Then, if Fig.18 As shown in FIG. 4 , the first insulating material layer 45a is patterned using the second insulating material layer 45b as a mask. In some exemplary embodiments, the first insulating material layer 45a may be patterned by a dry etching process.

[0209] Then, an ashing process is performed. As the ashing process proceeds, the second portion 45b2 of the second insulating material layer 45b may be removed, and as shown in FIG. Fig.19 As shown in FIG. 4 , the first portion 45 b 1 thereof may be formed as a second insulating layer 450 b .

[0210] Then, if Fig.19 As shown in FIG, an etching process is performed using the second insulating layer 450b as a mask. The etching process using the second insulating layer 450b as a mask may be a dry etching process.

[0211] In the light emitting area LA, the third conductive material layer ( Fig.18 43c), and in the non-light emitting area NLA, the first insulating material layer ( Fig.18 45a in the figure). Therefore, an insulating layer 450 including a first insulating layer 450a and a second insulating layer 450b can be formed. In addition, a first conductive pattern 431, a second conductive pattern 433, a third conductive pattern 435, a fourth conductive pattern 437, a fifth conductive pattern 439, a first pad P1, a second pad ( Figure 5 P2 in the figure), the first connection pattern CL1 and the second connection pattern ( Figure 5 Since detailed configurations of the lower conductive layer 430a, the middle conductive layer 430b, and the upper conductive layer 430c included in the wiring layer 430 have been described above, they will not be described.

[0212] Furthermore, in the light emitting area LA, a contact hole CH exposing the middle conductive layer 430b may be formed through an etching process, and in the non-light emitting area NLA, a pad contact hole CHP exposing the upper conductive layer 430c or the first upper pad pattern P1c may be formed.

[0213] Then, if Fig. 20 As shown in FIG. 4 , the reflective layer 470 is formed by printing a reflective ink on the insulating layer 450 through screen masking.

[0214] Then, each light emitting element 500 is electrically connected to the wiring layer 430 by a flip chip bonding method, etc. As described above, the light emitting element 500 may be bonded to the wiring layer 430 through the first connection member SR1, the second connection member SR2, and the like.

[0215] Then, a capping layer CPL is formed to cover each light emitting element 500, and a wavelength converter 700 is formed on the capping layer CPL. In some exemplary embodiments, the wavelength converter 700 may be formed by applying a photosensitive organic material including a wavelength shifter such as quantum dots to the capping layer CPL, exposing the photosensitive organic material to light, and developing the exposed photosensitive organic material.

[0216] Then, a passivation layer 800 is formed to cover each wavelength converter 700. The passivation layer 800 may be formed only in the light emitting area LA, and may not be formed in the non-light emitting area NLA. Alternatively, in another exemplary embodiment, the passivation layer 800 may be disposed in the non-light emitting area NLA, but may be disposed not to cover the pad contact hole CHP.

[0217] The backlight substrate LS can be manufactured through the above-mentioned process.

[0218] Then, when the pads (eg, the first pads P1) exposed through the pad contact holes CHP are connected to the backlight flexible substrate FPC2 via the pad connection members AP, the backlight flexible substrate FPC2 may be manufactured. Figure 8 The structure shown in .

[0219] However, the method of manufacturing the backlight substrate LS is not limited to the foregoing method.

[0220] Fig.39 , Fig.40 , Fig.41 , Fig.42 , Fig.43 , Fig.44 , Fig.45 and Fig.46 It is used to explain the manufacturing Figure 5 A cross-sectional view of another exemplary process of a backlight substrate is shown in Fig.39 , Fig.40 , Fig.41 , Fig.42 , Fig.44 , Fig.45 and Fig.46 is a step-by-step cross-sectional view, and Fig.43 yes Fig.42 An enlarged cross-sectional view of portion Q9.

[0221] Reference Fig.39 , Fig.40 , Fig.41 , Fig.42 , Fig.43 , Fig.44 , Fig.45 and Fig.46 , a first conductive material layer 43a, a second conductive material layer 43b and a third conductive material layer 43c are sequentially deposited on the base substrate 410.

[0222] Then, a photosensitive organic layer is formed on the third conductive material layer 43c, the photosensitive organic layer is exposed to light, and the photosensitive organic layer is developed to form an organic layer pattern PRb. The exposure / development process of the photosensitive organic layer for forming the organic layer pattern PRb may be performed using a multi-tone mask (e.g., a half-tone mask) including a light blocking unit, a semi-transmitting unit, and a light transmitting unit.

[0223] The organic layer pattern PRb may include a first organic layer pattern PR1b having a first thickness TR1 and a second organic layer pattern PR2b having a second thickness TR2 thinner than the first thickness TR1. That is, the organic layer pattern PRb having a step may be formed using one halftone mask. The organic layer pattern PRb may have a substantially constant thickness. The organic layer pattern PRb may be formed at a position corresponding to the thickness of the first organic layer pattern PR1b. Figure 5 and Figure 8 The wiring layer shown in ( Figure 5 and Figure 8 430) in the portion corresponding to the organic layer pattern PRb, and the second organic layer pattern PR2b of the organic layer pattern PRb is formed at the same Figure 8 The contact holes shown in ( Figure 8 CH) in the corresponding part.

[0224] Then, if Fig.40 As shown in FIG. 4 , the third conductive material layer 43 c is patterned using the organic layer pattern PRb as a mask. The third conductive material layer 43 c may be patterned through a dry etching process.

[0225] Then, if Fig.41 As shown in FIG. 4 , the second conductive material layer 43b is patterned using the organic layer pattern PRb and the patterned third conductive material layer 43c as a mask. The second conductive material layer 43b may be patterned by a wet etching process.

[0226] Since the second conductive material layer 43b is patterned by the wet etching process, a convex pattern ( Fig.13 43ct in ).

[0227] Then, if Fig.42 As shown in , the second organic layer pattern PR2b is removed by ashing the organic layer pattern PRb to expose the upper surface of the third conductive material layer 43c. After removing the second organic layer PR2b, the organic layer residual pattern PR11b may remain on the third conductive material layer 43c. The organic layer residual pattern PR11b may be a portion of the first organic layer pattern PR1b that remains without being removed during the ashing process.

[0228] Since the organic layer residual pattern PR11b is a pattern in which a portion of the first organic layer pattern PR1b remains, the width of the organic layer residual pattern PR11b may be narrower than that of the first organic layer pattern PRb. Therefore, the convex pattern 43ct of the third conductive material layer 43c may be partially or entirely exposed without being covered by the organic layer residual pattern PR11b.

[0229] Next, the protruding pattern 43ct of the third conductive material layer 43c, the portion of the third conductive material layer 43c not covered by the organic layer residual pattern PR11b, and the portion of the first conductive material layer 43a exposed and not covered by the second conductive material layer 43b are removed by batch etching using the organic layer residual pattern PR11b as a mask. In addition, the portion of the third conductive material layer 43c not covered by the organic layer residual pattern PR11b may also be removed during the dry etching process. The first conductive material layer 43a may also be patterned.

[0230] Even when the convex pattern 43ct and the first conductive material layer 43a are removed in the same process, the first conductive material layer 43a is masked by the second conductive material layer 43b. Therefore, after the etching process is completed, the distance D1b between adjacent first conductive material layers 43a can be smaller than the distance D2b between adjacent third conductive material layers 43c.

[0231] Then, the organic layer residual pattern PR11b is removed.

[0232] Then, if Fig.44 As shown in FIG. 4 , a first insulating material layer 45a is formed on the third conductive material layer 43c. The first insulating material layer 45a may be formed over the entire surface of the base substrate 410, and the first insulating material layer 45a may be made of an inorganic insulating material.

[0233] Then, a photosensitive organic layer is applied onto the first insulating material layer 45a, exposed to light, and developed to form a second insulating material layer 45b. The exposure / development process of the photosensitive organic layer for forming the second insulating material layer 45b may be performed using a full-tone mask.

[0234] Next, when the first insulating material layer 45a is patterned using the second insulating layer 450b as a mask, as shown in FIG. Fig.45 As shown in FIG. 4 , an insulating layer 450 including a first insulating layer 450a and a second insulating layer 450b may be formed. In some exemplary embodiments, the first insulating material layer 45a may be patterned through a dry etching process.

[0235] exist Fig.45In the above process, a first conductive pattern 431, a second conductive pattern 433, a third conductive pattern 435, a fourth conductive pattern 437, a fifth conductive pattern 439, a first pad P1, a second pad ( Figure 5 P2 in the figure), the first connection pattern CL1 and the second connection pattern ( Figure 8 Since the configurations of the lower conductive layer 430a, the middle conductive layer 430b, and the upper conductive layer 430c included in the wiring layer 430 have been described as described above, a detailed description thereof will be omitted.

[0236] In addition, in the light emitting area LA, Fig.45 The etching process forms a contact hole CH exposing the middle conductive layer 430b, and in the non-light emitting area NLA, a pad contact hole CHP exposing the upper conductive layer 430c or the first upper pad pattern P1c may be formed.

[0237] Then, if Fig.46 As shown in , the reflective layer 470 is formed by printing a reflective ink on the insulating layer 450 through screen masking. Then, each light emitting element 500 is electrically connected to the wiring layer 430 by a flip chip bonding method, etc. As described above, the light emitting element 500 can be bonded to the wiring layer 430 by the first connection member SR1, the second connection member SR2, etc.

[0238] Then, a capping layer CPL is formed to cover each light emitting element 500, and a wavelength converter 700 is formed on the capping layer CPL. Then, a passivation layer 800 is formed to cover each wavelength converter 700.

[0239] The backlight substrate LS may be manufactured through the above process. Then, when the pads (eg, the first pads P1) exposed through the pad contact holes CHP are connected to the backlight flexible substrate FPC2 via the pad connection members AP, the backlight substrate LS may be manufactured. Figure 8 The structure shown in .

[0240] According to the above exemplary embodiment, only two masks can be used to form not only a conductive pattern in the light-emitting area but also a connection pattern and a pad in the non-light-emitting area. Therefore, since a pad process, for example, a process of additionally forming a pad connection pattern separated from a wiring layer on the side of the pad can be omitted, there are advantages that the number of masks used in the manufacturing process of the backlight substrate can be reduced, and the manufacturing cost can be reduced according to the reduction in the number of masks.

[0241] Fig.21 It is shown Figure 8 A cross-sectional view of a modified example of a backlight substrate shown in, Fig. 22 yes Fig.21an enlarged cross-sectional view of portion Q7, and Fig.23 It is shown Fig. 9 sectional view of a modified example of the backlight substrate shown in .

[0242] Reference Fig.21 , Fig. 22 and Fig.23 The backlight substrate LS1 according to the present exemplary embodiment is different from the backlight substrate LS2 according to the previous exemplary embodiment. Figure 8 and Fig. 9 The backlight substrate LS shown in FIG. 4 is different in that the backlight substrate LS1 includes a wiring layer 430 ′, and the other configurations are substantially the same or similar. Therefore, redundant descriptions will be omitted.

[0243] The wiring layer 430 ′ may include a lower conductive layer 430 a , an intermediate conductive layer 430 b , an upper conductive layer 430 c , and protruding tips 430 t .

[0244] The protrusion tip 430t may be disposed at the edge of each conductive pattern of the upper conductive layer 430c. Fig. 22 As shown in FIG. 4 , the protrusion tip 430t may be disposed at an edge of the first upper conductive pattern 431c and an edge of the second upper conductive pattern 433c, and as shown in FIG. Fig.23 As shown in , the protrusion tip 430t may also be disposed at the edge of the first upper pad pattern P1c. In some exemplary embodiments, the lower surface 430t1 of the protrusion tip 430t may not contact the intermediate conductive layer 430b, and may contact the first insulating layer 450a. Alternatively, although not shown in the drawings, in another exemplary embodiment, the lower surface 430t1 of the protrusion tip 430t may not contact the first insulating layer 450a, and in this case, an empty space may be formed between the lower surface 430t1 of the protrusion tip 430t and the first insulating layer 450a.

[0245] The protrusion tip 430t can be formed by allowing the protrusion pattern ( Fig.16 More specifically, when the raised pattern ( Fig.16 43ct) rather than exposing the raised pattern ( Fig.16 In the above reference Fig.15 and Fig.16 The organic layer residual pattern ( Fig.15 PR11 in) and then perform a process for removing the raised pattern ( Fig.16 During the dry etching process of 43ct) in Fig.16A portion of 43ct) in can be retained without being removed, which can be the raised tip 430t in the final structure.

[0246] In some exemplary embodiments, the distance between the protrusion tips 430t facing each other may be smaller than the distance between the lower conductive patterns facing each other. For example, the distance D2a between the two protrusion tips 430t respectively disposed at the edge of the first upper conductive pattern 431c and the edge of the second upper conductive pattern 433c may be narrower than the distance D1a between the first lower conductive pattern 431a and the second lower conductive pattern 433a facing each other.

[0247] Fig.24 It is shown Figure 5 2 is a cross-sectional view of another modified example of the backlight substrate shown in FIG.

[0248] Reference Fig.24 The backlight substrate LS2 according to the present exemplary embodiment is different from the backlight substrate LS2 according to the previous exemplary embodiment. Figure 8 and Fig. 9 The biggest difference of the backlight substrate LS shown in FIG. 1 is that the backlight substrate LS2 further includes a switching element TFT, and the other configurations are substantially the same or similar. Therefore, redundant descriptions will be omitted, and the differences will be mainly described.

[0249] A switching element TFT, a first lower insulating layer 421 , and a second lower insulating layer 423 may be further disposed between the base substrate 410 and the wiring layer 430 .

[0250] In some exemplary embodiments, the switching element TFT may be a thin film transistor. The switching element TFT may include an active layer ACT, a gate electrode GE, a source electrode, and a drain electrode. The active layer ACT may be formed of a semiconductor material. For example, the active layer ACT may be a semiconductor pattern made of polycrystalline silicon, amorphous silicon, an oxide semiconductor, etc.

[0251] The first lower insulating layer 421 may be disposed on the active layer ACT, and the gate electrode GE may be disposed on the first lower insulating layer 421. In addition, the second lower insulating layer 423 may be disposed on the gate electrode GE, and the wiring layer 430 may be disposed on the second lower insulating layer 423.

[0252] A portion of the first conductive pattern 431 may penetrate the first and second lower insulating layers 421 and 423 to contact and be electrically connected to the active layer ACT. That is, a portion of the first conductive pattern 431 may function as a drain electrode of the switching element TFT.

[0253] Furthermore, a portion of the first connection pattern CL1 may extend to the emission area LA and penetrate the first and second lower insulating layers 421 and 423 to contact and be electrically connected to the active layer ACT. That is, a portion of the first connection pattern CL1 may function as a source electrode of the switching element TFT.

[0254] Although not shown in the drawings, a gate line connected to the switching element TFT may be disposed on the base substrate 410. In some exemplary embodiments, the gate line may be disposed on the same layer as the gate electrode GE.

[0255] The switching element TFT may perform a switching operation according to a gate on / off signal supplied to the gate electrode GE, and thus may provide a driving voltage to the light emitting element 500 according to the operation of the switching element TFT.

[0256] At the same time, despite Fig.24 The switching element TFT is shown as a thin film transistor in FIG. 1 , but this is only an example. In addition, the switching element TFT can be implemented as various types of thin film transistors, such as a bottom gate thin film transistor.

[0257] Fig.25 is along Figure 1 A cross-sectional view of a display device according to another exemplary embodiment taken along a section line X1-X1', and Fig.26 yes Fig.25 An enlarged cross-sectional view of the wiring layer.

[0258] Reference Fig.25 and Fig.26 According to the present exemplary embodiment, the display device 2 and Figure 2 The difference between the display device 1 shown in FIG. 1 and FIG. 2 is that the display device 2 includes Figure 2 The backlight substrate LS3 is different from the backlight substrate LS of the exemplary embodiment, and the display device 2 includes Figure 2 The light source substrate 400 of the exemplary embodiment is different from the light source substrate 401, and other configurations are substantially the same or similar. Therefore, redundant descriptions will be described.

[0259] The light source substrate 401 may include a base substrate 410 and a wiring layer 440, and may further include an insulating layer 450. The light source substrate 401 may not include Figure 2 The reflective layer 470 shown in FIG. 4 is not shown because the wiring layer 440 can be used as a reflective layer.

[0260] The stacked structure of the wiring layer 440 is explained. The wiring layer 440 may have a structure in which a plurality of conductive layers are stacked. In some exemplary embodiments, the wiring layer 440 may have a structure in which two conductive layers are stacked. For example, Fig.26As shown in FIG. 4 , the wiring layer 440 may include a lower conductive layer 440 a and an upper conductive layer 440 b .

[0261] The lower conductive layer 440a may be disposed on the base substrate 410. In some exemplary embodiments, the lower conductive layer 440a may be made of a conductive material having excellent light reflectivity. In some exemplary embodiments, the reflectivity of the lower conductive layer 440a relative to light in the visible light range may be 70% to 99%. Exemplarily, the lower conductive layer 440a may be made of a metal having excellent reflectivity, such as aluminum (Al), an aluminum alloy, silver (Ag), a silver alloy, or gold (Au). For example, the lower conductive layer 440a may include aluminum or an aluminum alloy. Since the lower conductive layer 440a is made of a material having excellent light reflectivity, an additional reflective layer may be omitted.

[0262] In some exemplary embodiments, the thickness TH1a of the lower conductive layer 440a may be 600 nm to 800 nm.

[0263] The upper conductive layer 440b may be disposed on the lower conductive layer 440a. The upper conductive layer 440b may contact the lower conductive layer 440a to reduce the resistance of the wiring layer 440. In some exemplary embodiments, the upper conductive layer 440b may be made of titanium (Ti) or a titanium alloy. In some exemplary embodiments, the thickness TH1b of the upper conductive layer 440b may be thinner than the thickness of the lower conductive layer 440a, and may be, for example, 10 nm to 30 nm.

[0264] The insulating layer 450 may be disposed on the wiring layer 440. The insulating layer 450 may provide a flat surface between the wiring layer 440 and the light emitting element 500, and may define a connection portion between the wiring layer 440 and the light emitting element 500. In addition, a more detailed description of the insulating layer 450 is the same as that described above, and thus will be omitted.

[0265] Fig. 27 yes Fig.25 A plan view of the backlight substrate shown in FIG. Fig.28 yes Fig. 27 An enlarged plan view of any one of the light emitting groups shown in .

[0266] Reference Fig. 27 and Fig.28 In a plan view, the wiring layer 440 may include a first conductive pattern 441, a second conductive pattern 443, a third conductive pattern 445, a fourth conductive pattern 447, a fifth conductive pattern 449, a first pad P11, a second pad P12, a first connection pattern CL11, and a second connection pattern CL12.

[0267] The first conductive pattern 441 and the fifth conductive pattern 449 may be connected to each light-emitting block BL, and the second conductive pattern 443 , the third conductive pattern 445 , and the fourth conductive pattern 447 may connect the light-emitting elements 500 included in each light-emitting block BL to each other in series.

[0268] The area occupied by the first conductive pattern 441, the second conductive pattern 443, the third conductive pattern 445, the fourth conductive pattern 447, and the fifth conductive pattern 449 on a plane may be larger than Figure 5 and Figure 6 The area in the exemplary embodiment shown in is relatively wider.

[0269] In some exemplary embodiments, the first conductive pattern 441, the second conductive pattern 443, the third conductive pattern 445, the fourth conductive pattern 447, and the fifth conductive pattern 449 may be spaced apart from each other and may be disposed adjacent to each other on a plane. The distance between adjacent conductive patterns may be less than the width of the light emitting element 500. Exemplarily, the distance Wb between the second conductive pattern 443 and the fourth conductive pattern 447 adjacent to each other along the first direction X may be narrower than the width WL1 of the light emitting element 500 measured along the first direction X.

[0270] A driving voltage for driving the light emitting element 500 may be supplied to the first pad P11. The first pad P11 may be disposed in the non-light emitting area NLA and electrically connected to the first conductive pattern 441 through the first connection pattern CL11.

[0271] A common voltage for driving the light emitting element 500 may be supplied to the second pad P12. The second pad P12 may be electrically connected to the fifth conductive pattern 449 through the second connection pattern CL12.

[0272] Fig.29 It is along Fig. 27 A cross-sectional view of the backlight substrate taken along the section line X7-X7', and Fig.30 It is along Fig. 27 A cross-sectional view of the backlight substrate taken along section line X9-X9'.

[0273] Apart from Fig. 27 and Fig.28 In addition, refer to Fig.29 and Fig.30, the first conductive pattern 441, the second conductive pattern 443, the third conductive pattern 445, the fourth conductive pattern 447, and the fifth conductive pattern 449 may be formed as a single layer, and the first pad P11 may have a two-layer structure including a first lower pad pattern P11a and a first upper pad pattern P11b. In some exemplary embodiments, the first connection pattern CL11 may have a single-layer structure including only the first lower connection pattern CL11a in the light emitting area LA, and may have a double-layer structure including the first lower connection pattern CL11a and the first upper connection pattern CL11b in the non-light emitting area NLA. Alternatively, in another exemplary embodiment, the first connection pattern CL11 may have a single-layer structure including only the first lower connection pattern CL11a in both the light emitting area LA and the non-light emitting area NLA.

[0274] The relationship between the lower conductive layer 440a and the upper conductive layer 440b and the first conductive pattern 441, the second conductive pattern 443, the third conductive pattern 445, the fourth conductive pattern 447, the fifth conductive pattern 449, the first pad P11, and the first connection pattern CL11 is explained. The lower conductive layer 440a may include the first conductive pattern 441, the second conductive pattern 443, the third conductive pattern 445, the fourth conductive pattern 447, the fifth conductive pattern 449, the first lower pad pattern P11a, and the first lower connection pattern CL11a. The upper conductive layer 440b may include the first upper pad pattern P11b, and may also include the first upper connection pattern CL11b.

[0275] In some exemplary embodiments, in order for the lower conductive layer 440a to function as a reflective layer, the upper conductive layer 440b may not be disposed in the light emitting area LA. In other words, the upper conductive layer 440b may be disposed only in the non-light emitting area NLA.

[0276] In some exemplary embodiments, the thickness of the lower conductive layer 440a in the light emitting area LA may be different from the thickness of the lower conductive layer 440a in the non-light emitting area NLA. Exemplarily, the thickness TH1 of the lower conductive layer 440a in the light emitting area LA may be thinner than the thickness TH2 of the lower conductive layer 440a or the first lower pad pattern P11a in the non-light emitting area NLA.

[0277] The insulating layer 450 may be disposed on the wiring layer 440 , and the insulating layer 450 may include a first insulating layer 450 a and a second insulating layer 450 b .

[0278] In the emission area LA, a contact hole CHa exposing the lower conductive layer 440a may be defined in the insulation layer 450 , and in the non-emission area NLA, a pad contact hole CHPa exposing the first upper pad pattern P11b of the first pad P11 may be defined in the insulation layer 450 .

[0279] In the light emitting area LA, the light emitting element 500 may be disposed on the insulating layer 450 , and may be electrically connected to the wiring layer 440 through the first and second connection members SR1 and SR2 .

[0280] Since connection relationships between the first conductive pattern 441 , the second conductive pattern 443 , the third conductive pattern 445 , the fourth conductive pattern 447 , and the fifth conductive pattern 449 and the light emitting element 500 are substantially the same as or similar to those described above, a detailed description thereof will be omitted.

[0281] A capping layer CPL covering the light emitting element 500 may be disposed on the light emitting element 500 .

[0282] The wavelength converter 700 may be disposed on the capping layer CPL. The wavelength converter 700 may be in contact with the capping layer CPL. In some exemplary embodiments, the wavelength converter 700 may also be in contact with the insulating layer 450.

[0283] A passivation layer 800 may be disposed on the wavelength converter 700. The passivation layer 800 may be in contact with the wavelength converter 700.

[0284] In the non-light emitting area NLA, a pad connection member AP such as an anisotropic conductive film may be disposed in the pad contact hole CHPa, and the first pad P11 may be electrically connected to the backlight flexible substrate FPC2 through the pad connection member AP.

[0285] In some exemplary embodiments, the coupling force between the upper conductive layer 440b and the pad connection member AP may be greater than the coupling force between the lower conductive layer 440a and the pad connection member AP. Therefore, the pad connection member AP directly contacts the first upper pad pattern P11b of the first pad P11, and thus the connection reliability between the first pad P11 and the backlight flexible substrate FPC2 may be improved.

[0286] In addition, according to the aforementioned exemplary embodiment, the first conductive pattern 441, the second conductive pattern 443, the third conductive pattern 445, the fourth conductive pattern 447, and the fifth conductive pattern 449 provided in the light emitting area LA are made of a metal having optical reflectivity, and therefore there is an advantage that a separate reflective layer can be omitted. In addition, since the upper conductive layer remains on the pad portion, there is an advantage that the connection reliability between the backlight flexible substrate FPC2 and the pad can be improved and the pad resistance can be reduced.

[0287] Fig.31 , Fig.32 , Fig.33 , Fig.34 , Fig.35 , Fig.36 and Fig.37 It is used to explain the manufacturing Fig.29 A step-by-step cross-sectional view of the process of backlight substrate is shown in FIG.

[0288] Reference Fig.31 , Fig.32 , Fig.33 , Fig.34 , Fig.35 , Fig.36 and Fig.37 ,like Fig.31 As shown in FIG. 4 , a first conductive material layer 44a and a second conductive material layer 44b are sequentially deposited on a base substrate 410. Examples of materials for forming each of the first conductive material layer 44a and the second conductive material layer 44b may be the same as those described above with reference to Fig.26 The lower conductive layer described ( Fig.26 440a) and the upper conductive layer ( Fig.26 The examples of materials for each of 440b) are the same.

[0289] Then, a photosensitive organic layer is formed, exposed to light, and developed to form an organic layer pattern PRa. The exposure / development process of the photosensitive organic layer for forming the organic layer pattern PRa may be performed using a half-tone mask.

[0290] The organic layer pattern PRa may include a first organic layer pattern PR1a having a first thickness TR1a and a second organic layer pattern PR2a having a second thickness TR2a thicker than the first thickness TR1a. That is, the organic layer pattern PRa having a step may be formed using one halftone mask. The organic layer pattern PRa may be formed at a position adjacent to the wiring layer ( Fig. 27 and Fig.29 440) in the corresponding portion, and the second organic layer pattern PR2a of the organic layer pattern PRa is formed on the upper conductive layer ( Fig.29 and Fig.30 In the part set by 440b).

[0291] Then, if Fig.32As shown in FIG. 1 , the first conductive material layer 44a and the second conductive material layer 44b are patterned using the organic layer pattern PRa as a mask. The first conductive material layer 44a and the second conductive material layer 44b may be patterned by a dry etching process during the same process. Portions of the first conductive material layer 44a and the second conductive material layer 44b covered by the organic layer pattern PRa may not be patterned.

[0292] Next, the first organic layer pattern PR1a of the organic layer pattern PRa is removed by an ashing process. After the first organic layer pattern PR1a is removed, Fig.33 As shown in FIG. 4 , the organic layer residual pattern PR21a may remain on the second conductive material layer 44b in the non-emission area NLA. The organic layer residual pattern PR21a may be a portion of the second organic layer pattern PR21a that remains without being removed during the ashing process.

[0293] Next, if Fig.34 As shown in , the exposed second conductive material layer 44b is removed using the organic layer residual pattern PR21a as a mask. The process of removing the second conductive material layer 44b may be performed by a dry etching process. In some exemplary embodiments, in the process of removing the second conductive material layer 44b, a portion of the first conductive material layer 44a that is not masked by the organic layer residual pattern PR21a may also be removed. Therefore, the thickness of the portion of the first conductive material layer 44a disposed in the light emitting area LA may be thinner than the thickness of the portion of the first conductive material layer 44a disposed in the non-light emitting area NLA.

[0294] Through the above process, a lower conductive layer 440a including a first conductive pattern 441, a second conductive pattern 443, a third conductive pattern 445, a fourth conductive pattern 447, a fifth conductive pattern 449, a first lower pad pattern P11a and a first lower connection pattern CL11a can be formed, and an upper conductive layer 440b including a first upper pad pattern P11b and a first upper connection pattern CL11b can be formed.

[0295] Then, the organic layer residual pattern PR21a is removed.

[0296] Then, if Fig.35 As shown in FIG. 4 , a first insulating material layer 45a is formed on the third conductive material layer 43c. The first insulating material layer 45a may be formed over the entire surface of the base substrate 410 and may be made of an inorganic insulating material.

[0297] Then, a photosensitive organic layer is applied onto the first insulating material layer 45a, exposed to light, and developed to form the second insulating layer 450b. The exposure / development process of the photosensitive organic layer for forming the second insulating layer 450b may be performed using a full-tone mask.

[0298] The second insulating layer 450b may be formed on the Fig.29 Contact holes described ( Fig.29 CHa) and pad contact hole ( Fig.29 In the remaining area except the part corresponding to CHPa).

[0299] Then, if Fig.36 As shown in , the first insulating material layer 45a is patterned using the second insulating layer 450b as a mask. In some exemplary embodiments, the first insulating material layer 45a may be patterned by a dry etching process, and thereby the first insulating layer 450a may be formed. When the first insulating layer 450a is patterned, a contact hole CHa and a pad contact hole CHPa may be formed in the insulating layer 450.

[0300] Next, if Fig.37 As shown in , each light emitting element 500 is electrically connected to the wiring layer 430 by a flip chip bonding method, etc. As described above, the light emitting element 500 may be bonded to the wiring layer 430 by the first connection member SR1, the second connection member SR2, etc.

[0301] Then, a capping layer CPL is formed to cover each light emitting element 500, and a wavelength converter 700 is formed on the capping layer CPL. Then, a passivation layer 800 is formed to cover each wavelength converter 700.

[0302] Then, when the pads (eg, the first pads P1) exposed through the pad contact holes CHP are connected to the backlight flexible substrate FPC2 via the pad connection members AP, the backlight flexible substrate FPC2 may be manufactured. Fig.29 The structure shown in .

[0303] According to the above exemplary embodiment, only two masks can be used to form not only a conductive pattern in the light-emitting area but also a connection pattern and a pad in the non-light-emitting area. Therefore, since a pad process, for example, a process of additionally forming a pad connection pattern separated from a wiring layer on the side of the pad can be omitted, there are advantages that the number of masks used in the manufacturing process of the backlight substrate can be reduced, and the manufacturing cost can be reduced according to the reduction in the number of masks.

[0304] Furthermore, since the lower conductive layer of the wiring layer can be used as a reflective layer, there is no need to form a separate reflective layer, thereby having advantages of simplifying the manufacturing process and simplifying the structure of the backlight substrate.

[0305] Fig.38 It is shown Fig.29 sectional view of a modified example of the backlight substrate shown in .

[0306] Reference Fig.38 According to the present exemplary embodiment, the backlight substrate LS4 and Fig.29 The above-mentioned backlight substrate LS3 shown in FIG. 1 is significantly different in that the backlight substrate LS4 further includes a switching element TFT, and the other configurations are substantially the same or similar. Therefore, redundant descriptions will be omitted, and the differences will be mainly described.

[0307] A switching element TFT, a first lower insulating layer 421 , and a second lower insulating layer 423 may be further disposed between the base substrate 410 and the wiring layer 430 .

[0308] In some exemplary embodiments, the switching element TFT may be a thin film transistor. The switching element TFT may include an active layer ACT, a gate electrode GE, a source electrode, and a drain electrode.

[0309] The active layer ACT may be disposed on the base substrate 410, and the first lower insulating layer 421 may be disposed on the active layer ACT. The gate electrode GE may be disposed on the first lower insulating layer 421, the second lower insulating layer 423 may be disposed on the gate electrode GE, and the wiring layer 440 may be disposed on the second lower insulating layer 423.

[0310] A portion of the first conductive pattern 441 may penetrate the first and second lower insulating layers 421 and 423 to contact and be electrically connected to the active layer ACT. That is, a portion of the first conductive pattern 441 may function as a drain electrode of the switching element TFT.

[0311] Furthermore, in the emission area LA, a portion of the first connection pattern CL11 may penetrate the first and second lower insulating layers 421 and 423 to contact and be electrically connected to the active layer ACT. That is, a portion of the first connection pattern CL11 may function as a source electrode of the switching element TFT.

[0312] In addition, since the detailed description of the switching element TFT is basically the same as that of the above reference Fig.24 Those described are the same or similar, so a detailed description thereof will be omitted.

[0313] As described above, according to the exemplary embodiments of the present invention, a backlight unit capable of simplifying a structure and reducing the number of masks in a manufacturing process and a display device including the backlight unit can be provided.

[0314] The effects of the present invention are not limited to the foregoing, and other various effects are contemplated herein.

[0315] Although certain exemplary embodiments and examples have been described herein, other embodiments and modifications will be apparent from this description. Therefore, the inventive concept is not limited to such embodiments, but rather lies in the broader scope of the appended claims and various obvious modifications and equivalent arrangements as will be apparent to those of ordinary skill in the art.

Claims

1. Display equipment, including: A base substrate defining a light-emitting region and a non-light-emitting region; A wiring layer is provided on the base substrate, and the wiring layer comprises: A lower conductive layer disposed on the base substrate; an intermediate conductive layer disposed on the lower conductive layer; and an upper conductive layer, disposed on the middle conductive layer; a light emitting element disposed on the wiring layer in the light emitting region; a connecting member for electrically connecting the light emitting element and the wiring layer; a flexible board electrically connected to the wiring layer in the non-light emitting region; and a pad connection member electrically connecting the wiring layer and the flexible board in the non-light emitting region, the pad connection member contacting the upper conductive layer of the wiring layer; in: the connecting member contacts the intermediate conductive layer of the wiring layer in the light emitting region; and The connection member contacts the light emitting element in the light emitting region.

2. The display device according to claim 1, further comprising: an insulating layer, disposed between the wiring layer and the light emitting element; a contact hole exposing the middle conductive layer, the contact hole being defined to penetrate the insulating layer and the upper conductive layer in the light emitting region; as well as a pad contact hole exposing the upper conductive layer, the pad contact hole being defined to penetrate the insulating layer in the non-light emitting region, in: The connecting member contacts the intermediate conductive layer through the contact hole; and The pad connection member contacts the upper conductive layer through the pad contact hole.

3. The display device according to claim 2, further comprising: A reflective layer, directly disposed on the insulating layer, wherein the reflective layer comprises an opening; Wherein, the light emitting element is arranged in the opening in a plan view.

4. The display device according to claim 2, further comprising: A capping layer, disposed on the light emitting element, wherein the capping layer covers the light emitting element; as well as The wavelength converter is arranged on the capping layer.

5. The display device according to claim 4, wherein: The capping layer is further disposed in a space between the light emitting element and the insulating layer.

6. The display device according to claim 4, wherein: The light emitting element is configured to emit blue light; and The wavelength converter includes a wavelength phase shifter configured to convert the blue light into red light or green light.

7. The display device according to claim 1, wherein: in, The lower conductive layer and the upper conductive layer include at least one of titanium and a titanium alloy; and The intermediate conductive layer includes at least one of copper and a copper alloy.

8. The display device according to claim 1, wherein: The lower conductive layer includes a first lower conductive pattern and a second lower conductive pattern disposed to be spaced apart from each other in the light emitting region; The intermediate conductive layer includes a first intermediate conductive pattern and a second intermediate conductive pattern disposed to be spaced apart from each other in the light emitting region; The upper conductive layer includes a first upper conductive pattern and a second upper conductive pattern disposed to be spaced apart from each other in the light emitting region; The first lower conductive pattern, the first middle conductive pattern and the first upper conductive pattern overlap each other; the second lower conductive pattern, the second middle conductive pattern and the second upper conductive pattern overlap each other; The light emitting element comprises: a first electrode electrically connected to the first intermediate conductive pattern; and a second electrode electrically connected to the second intermediate conductive pattern; and A distance between the first lower conductive pattern and the second lower conductive pattern is greater than a distance between the first upper conductive pattern and the second upper conductive pattern.

9. The display device according to claim 8, wherein: The upper conductive layer further includes a protruding tip connected to the first upper conductive pattern, the protruding tip being disposed at an edge of the first upper conductive pattern facing the second upper conductive pattern and not contacting the first intermediate conductive pattern.

10. Display equipment, including: A base substrate defining a light-emitting region and a non-light-emitting region; A wiring layer is provided on the base substrate, and the wiring layer comprises: A lower conductive layer disposed on the base substrate; an intermediate conductive layer disposed on the lower conductive layer; and an upper conductive layer, disposed on the middle conductive layer; a light emitting element disposed on the wiring layer in the light emitting region; a connecting member electrically connecting the light emitting element and the wiring layer, the connecting member contacting the intermediate conductive layer of the wiring layer and the light emitting element; a flexible board electrically connected to the wiring layer in the non-light emitting region; a pad connection member electrically connected to the wiring layer and the flexible board in the non-light emitting region, the pad connection member contacting the upper conductive layer of the wiring layer; and a switching element disposed between the base substrate and the wiring layer, Wherein, the wiring layer further includes: A first conductive pattern, disposed in the light emitting region and electrically connected to the first electrode of the light emitting element and the switch element; a second conductive pattern disposed in the light emitting region, electrically connected to a second electrode of the light emitting element, and spaced apart from the first conductive pattern; and A pad is provided in the non-light emitting area, and the pad is in contact with the pad connecting member.

11. The display device according to claim 10, wherein: The wiring layer further includes: A connection pattern is connected to the pad and the switching element.

12. The display device according to claim 10, wherein: The connecting member includes a first connecting member and a second connecting member spaced apart from the first connecting member; The first connection member contacts the first conductive pattern and the first electrode of the light emitting element in the light emitting region; as well as The second connection member contacts the second conductive pattern and the second electrode of the light emitting element in the light emitting region.

13. Display equipment, including: A base substrate defining a light-emitting region and a non-light-emitting region; A wiring layer is provided on the base substrate, and the wiring layer comprises: a lower conductive layer disposed on the base substrate; and An upper conductive layer, disposed on the lower conductive layer, the upper conductive layer being in contact with the lower conductive layer; a light emitting element disposed on the wiring layer in the light emitting region; a connecting member for electrically connecting the light emitting element and the wiring layer; a flexible board electrically connected to the wiring layer in the non-light emitting region; a pad connection member electrically connecting the wiring layer and the flexible board in the non-light emitting region, the pad connection member contacting the upper conductive layer of the wiring layer; and a switching element disposed between the base substrate and the wiring layer; Wherein, the wiring layer further includes: A first conductive pattern, disposed in the light emitting region and electrically connected to the first electrode of the light emitting element and the switch element; a second conductive pattern disposed in the light emitting region, electrically connected to a second electrode of the light emitting element, and spaced apart from the first conductive pattern; and A pad is provided in the non-light emitting area, and the pad is in contact with the pad connecting member.

14. The display device according to claim 13, wherein: the connecting member contacts the lower conductive layer of the wiring layer in the light emitting region; and The connection member contacts the light emitting element in the light emitting region.

15. The display device according to claim 13, wherein: The connecting member includes a first connecting member and a second connecting member spaced apart from the first connecting member; The first connection member contacts the first conductive pattern and the first electrode of the light emitting element in the light emitting region; as well as The second connection member contacts the second conductive pattern and the second electrode of the light emitting element in the light emitting region.

16. The display device according to claim 13, wherein: The light emitting element does not overlap with the upper conductive layer of the wiring layer.

17. The display device according to claim 13, wherein: A thickness of a portion of the lower conductive layer disposed in the light emitting region is smaller than a thickness of a portion of the lower conductive layer disposed in the non-light emitting region.

18. The display device according to claim 17, wherein: The lower conductive layer comprises at least one of aluminum, aluminum alloy, silver, silver alloy, and gold; and The upper conductive layer includes at least one of titanium and a titanium alloy.

19. The display device according to claim 13, further comprising: an insulating layer, disposed between the wiring layer and the light emitting element; a contact hole exposing the lower conductive layer, the contact hole being defined to penetrate the insulating layer in the light emitting region; as well as a pad contact hole exposing the upper conductive layer, the pad contact hole being defined to penetrate the insulating layer in the non-light emitting region, in: the connection member contacts the lower conductive layer through the contact hole; and The pad connection member contacts the upper conductive layer through the pad contact hole.

20. The display device of claim 13, wherein: A light-emitting block including a plurality of the light-emitting elements is defined on the wiring layer; The lower conductive layer includes a plurality of lower conductive patterns spaced apart from each other; and The plurality of light emitting elements included in the light emitting block are connected in series to one another through the lower conductive pattern.

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