Substrate processing apparatus and substrate processing method

Abstract

The present disclosure describes a substrate processing apparatus and a substrate processing method capable of efficiently performing dry lithography processing. An example of a substrate processing apparatus is provided with: a dry lithography apparatus configured to perform lithography processing on a substrate mainly with a gas; and a connection part configured to connect the exposure machine to the dry lithography apparatus, the exposure machine being configured to expose the substrate. The connecting part comprises a conveying space which is adjacent to the exposure space of the exposure machine and is used for conveying the substrate between the exposure machine and the dry type photoetching device.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. Background Art

[0002] Patent document 1 discloses a substrate processing device, which includes: a box transfer station for carrying in and out substrates; a processing unit that performs various processes on the substrates under atmospheric pressure; a conveying unit; an interface device; and an EUV exposure machine. The conveying unit is configured to transfer the substrate between the processing unit and the interface device. The EUV exposure machine is configured to perform exposure processing on a substrate arranged in a vacuum chamber that is depressurized to a vacuum using an EUV light source. The interface device is configured to include a load lock chamber that switches between a vacuum state and an atmospheric state, and transfers the substrate between the conveying unit and the EUV exposure machine.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2010-123732 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] The present disclosure describes a substrate processing apparatus and a substrate processing method capable of efficiently performing dry photolithography processing.

[0008] Solutions for solving problems

[0009] An example of a substrate processing apparatus includes: a dry photolithography apparatus configured to perform photolithography processing on a substrate mainly using gas; and a connection portion configured to connect an exposure machine to the dry photolithography apparatus, the exposure machine configured to expose the substrate. The connection portion includes a transport space adjacent to an exposure space of the exposure machine and used to transport the substrate between the exposure machine and the dry photolithography apparatus.

[0010] Effects of the Invention

[0011] According to the substrate processing apparatus and substrate processing method disclosed in the present invention, dry photolithography processing can be performed efficiently. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a side view schematically showing an example (first example) of a substrate processing system.

[0013] Figure 2 It is schematically indicated Figure 1 A top view of a substrate processing system.

[0014] Figure 3It is a top view schematically showing another example (second example) of the substrate processing system.

[0015] Figure 4 It is a top view schematically showing another example (third example) of the substrate processing system.

[0016] Figure 5 It is a side view schematically showing another example (fourth example) of the substrate processing system.

[0017] Figure 6 (a) is a side view schematically showing another example (No. 5) of the substrate processing system. Figure 6 (b) is a side view schematically showing another example (sixth example) of the substrate processing system.

[0018] Figure 7 (a) is a side view schematically showing another example (the seventh example) of the substrate processing system. Figure 7 (b) is a side view schematically showing another example (eighth example) of the substrate processing system.

[0019] Figure 8 It is a top view schematically showing another example (ninth example) of the substrate processing system.

[0020] Description of Reference Numerals

[0021] 1. Substrate processing system (substrate processing device); 20. Dry photolithography device; 20A. Wet photolithography device; 30. Exposure machine; 40. Connection station (connection part); 40A. Connection station (another connection part); 50. Auxiliary connection station (auxiliary connection part); Ctr. Controller (control part); P3. Pressure adjustment part (pressure reduction part); P3A. Pressure adjustment part; P4. Pressure adjustment part (suction part, another pressure adjustment part); S1. Exposure space; S2. Transport space; U. Photolithography room. DETAILED DESCRIPTION

[0022] In the following description, the same reference numerals are used for the same elements or elements having the same functions, and repeated descriptions are omitted. In addition, in this specification, when referring to the top, bottom, right, and left of a figure, the orientation of the reference numerals in the figure is used as a reference.

[0023] [Structure of substrate processing system]

[0024] First, refer to Figure 1 and Figure 2, a substrate processing system 1 (substrate processing device) configured to process a substrate W is described. The substrate processing system 1 includes a feeding station 10, a dry photolithography device 20, an exposure machine 30, a connection station 40 (connection unit), pressure adjustment units P1 to P3, and a controller Ctr (control unit). The feeding station 10, the dry photolithography device 20, the connection station 40, and the exposure machine 30 can be arranged in a row in the horizontal direction, for example.

[0025] The substrate W may be in the shape of a circular plate or a plate other than a circular plate such as a polygon. The substrate W may also have a notch portion formed by partial cutting. The notch portion may be, for example, a notch (a groove in the shape of the letter U, the shape of the letter V, etc.), or a straight line portion extending in a straight line (the so-called orientation plane). The substrate W may also be, for example, a semiconductor substrate (silicon wafer), a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, and various other substrates. The diameter of the substrate W may be, for example, about 200 mm to 450 mm.

[0026] The loading and unloading station 10 includes a loading platform 11, which is configured to load at least one carrier (not shown). The carrier is configured to accommodate at least one substrate W in a sealed state. The carrier includes an opening and closing door for taking out and putting in the substrate W. A load lock chamber (not shown) may also be arranged on the loading platform 11.

[0027] The load lock chamber is configured to be able to adjust the internal pressure between atmospheric pressure and a pressure less than atmospheric pressure. When the substrate W is transported from the carrier to the dry photolithography apparatus 20, the substrate W can be placed in the load lock chamber from the carrier, and after the pressure in the load lock chamber is reduced, the substrate W is transferred from the load lock chamber to the dry photolithography apparatus 20. When the substrate W is transported from the dry photolithography apparatus 20 to the carrier, the substrate W can be placed in the load lock chamber from the dry photolithography apparatus 20, and after the pressure in the load lock chamber is restored to atmospheric pressure, the substrate W is transferred from the load lock chamber to the carrier.

[0028] The pressure in the load lock chamber can be adjusted by controlling the operation of an exhaust pump (not shown) connected to the load lock chamber and the opening and closing of a gas inlet valve (not shown) by the controller Ctr. The transfer of substrates W between the carrier, the load lock chamber, and the dry photolithography apparatus 20 can be performed by controlling the operation of a transfer arm (not shown) provided on the stage 11 by the controller Ctr.

[0029] The dry photolithography apparatus 20 is configured to perform photolithography processing on the substrate W mainly using gas. Therefore, the pressure in the dry photolithography apparatus 20 is set to a reduced pressure state lower than the atmospheric pressure. Here, in this specification, the photolithography processing of the dry photolithography apparatus 20 includes, for example, various processing for patterning the surface of the substrate W, such as the formation processing of the photoreactive film on the surface of the substrate W, the development processing of the photoreactive film after exposure, the heat treatment of the substrate W, the etching processing of the substrate W, etc. (excluding the exposure processing of the photoreactive film). The photoreactive film includes, for example, a metal-containing film with high EUV absorption, a resist film, etc. The gas used for processing the substrate W in the dry photolithography apparatus 20 can be a gas containing an organic solvent or a gas containing an acid. In addition, in the photolithography processing of the substrate W in the dry photolithography apparatus 20, a liquid such as a processing liquid can also be used locally.

[0030] like Figure 2 As illustrated in detail, the dry lithography apparatus 20 includes transport units 21 and 22 and a plurality of lithography chambers U.

[0031] The transport unit 21 is arranged in the first direction ( Figure 2 The conveying unit 21 has a conveying arm A1 built therein. The conveying arm A1 is configured to be able to perform horizontal movement in the first direction, vertical movement in the vertical direction, rotation around the vertical axis, and forward and backward movement based on a control signal from the controller Ctr. The conveying arm A1 is configured to transfer the substrate W between the load lock chamber, the lithography chamber U, and the conveying unit 22.

[0032] The transport unit 22 is arranged in a second direction (the width direction of the dry photolithography apparatus 20, Figure 2 The conveying unit 22 has a conveying arm A2 built therein. The conveying arm A2 is configured to be able to perform horizontal movement in the second direction, vertical movement in the vertical direction, rotation around the vertical axis, and forward and backward movement based on a control signal from the controller Ctr. The conveying arm A2 is configured to transfer the substrate W between the conveying unit 22 and the connection station 40 (pressure adjustment chambers 41, 42 described later).

[0033] The plurality of photolithography chambers U are arranged on both sides of the conveying unit 21 along the first direction ( Figure 1 Although not shown in the figure, the plurality of photolithography chambers U may also be arranged in a row along the first direction ( Figure 1 The photolithography chamber U is configured to perform a predetermined photolithography process on the substrate W (e.g., a process of forming a photoreactive thin film on the surface of the substrate W, a process of developing the photoreactive thin film after exposure, a heat treatment on the substrate W, an etching process on the substrate W, etc.).

[0034] The exposure device 30 is configured to perform exposure processing (e.g., pattern exposure) in the internal exposure space S1 on the photoreactive thin film formed on the surface of the substrate W in the dry photolithography apparatus 20. The exposure device 30 can be configured to selectively irradiate EUV light (wavelength: 13.5 nm) to the exposure target portion of the photoreactive thin film.

[0035] The connection station 40 is configured to connect the dry photolithography apparatus 20 to the exposure machine 30. Figure 1 and Figure 2 As illustrated, the connection station 40 is adjacent to the dry photolithography apparatus 20 and the exposure device 30. The connection station 40 may not be adjacent to the dry photolithography apparatus 20. That is, another device may be interposed between the connection station 40 and the dry photolithography apparatus 20.

[0036] like Figure 2 As shown in the example, the connection station 40 includes pressure adjustment chambers 41, 42 and a transfer chamber 43. Figure 1 As shown in the example, the connection station 40 may also include a plurality of pressure adjustment chambers 41 and a plurality of pressure adjustment chambers 42. The plurality of pressure adjustment chambers 41 may be stacked in the vertical direction or arranged in the horizontal direction. The plurality of pressure adjustment chambers 42 may be stacked in the vertical direction or arranged in the horizontal direction. Figure 1 As illustrated, the pressure adjustment chambers 41 and 42 may have an internal space capable of arranging one substrate W, and may be sufficiently smaller in size than the connection station 40 .

[0037] The pressure regulating chamber 41 is connected to the internal space of the dry photolithography apparatus 20 via the gate valve V1. The pressure regulating chamber 41 is connected to the internal space of the transfer chamber 43 via the gate valve V2. The pressure regulating chamber 42 is connected to the internal space of the dry photolithography apparatus 20 via the gate valve V3. The pressure regulating chamber 42 is connected to the internal space of the transfer chamber 43 via the gate valve V4.

[0038] The conveying chamber 43 is connected to the exposure space S1 of the exposure machine 30 via a gate valve V5. The conveying chamber 43 has a conveying arm A3 built therein. The conveying arm A3 is configured to be able to move up and down in the vertical direction, to rotate around the vertical axis, and to move forward and backward based on a control signal from the controller Ctr. The conveying arm A3 is configured to transfer the substrate W between the pressure adjustment chambers 41 and 42 and the exposure machine 30.

[0039] The gate valves V1 to V5 are configured to open and close based on control signals from the controller Ctr. When the gate valves V1 and V3 are open, the controller Ctr controls the conveying arms A2 and A3, thereby enabling the substrate W to be transported in and out between the pressure adjustment chambers 41 and 42 and the dry photolithography device 20. When the gate valve V5 is open, the controller Ctr controls the conveying arm A3, thereby enabling the substrate W to be transported in and out between the conveying chamber 43 and the exposure space S1 of the exposure machine 30. That is, the interior of the pressure adjustment chambers 41 and 42 and the conveying chamber 43 becomes the conveying space S2 for conveying the substrate W between the dry photolithography device 20 and the exposure machine 30. Figure 2 In the example, the conveying space S2 is adjacent to the internal space of the dry photolithography apparatus 20 and adjacent to the exposure space S1 of the exposure machine 30 .

[0040] The pressure regulating parts P1 to P3 are configured to adjust the pressure of the internal space of each connection object. The pressure regulating parts P1 to P3 may also each include an exhaust pump (not shown) and a gas inlet valve (not shown). The exhaust pump may be, for example, a turbomolecular pump. The operation of the exhaust pump and the opening and closing of the gas inlet valve may be controlled by the controller Ctr.

[0041] The pressure regulating unit P1 is connected to the dry photolithography apparatus 20. The pressure regulating unit P1 can reduce the pressure in the photolithography chamber U to 1×10 -5 Pa~1×10 -3 The pressure regulating unit P1 may reduce the pressure in the conveying units 21 and 22 to a vacuum of about 1 Pa to 100 Pa (within the range of "high vacuum" specified in Japanese Industrial Standard JIS Z8261-1:1999).

[0042] The pressure adjustment unit P2 is connected to the exposure machine 30. The pressure adjustment unit P2 can reduce the pressure in the exposure space S1 of the exposure machine 30 to 1×10 -8 Pa~1×10 -5 A vacuum of about 1000 Pa (within the range of "ultra-high vacuum" defined in Japanese Industrial Standard JIS Z8261-1:1999).

[0043] The pressure adjustment unit P3 (decompression unit) is connected to the pressure adjustment chambers 41, 42 and the conveying chamber 43. The pressure adjustment unit P3 can adjust the pressure in the conveying space S2 of the pressure adjustment chambers 41, 42 and the conveying chamber 43 from the pressure of the same degree as the pressure in the conveying units 21, 22 to the pressure of the same degree as the pressure in the exposure space S1 (i.e., medium vacuum to ultra-high vacuum). The pressure adjustment unit P3 can reduce the pressure in the conveying space S2 when the substrate W is conveyed in the conveying space S2, and can also reduce the pressure in the conveying space S2 all the time during the operation of the substrate processing system 1.

[0044] In this way, the pressure regulating parts P1 to P3 operate, so that the inside of each of the dry photolithography apparatus 20, the exposure machine 30, and the connection station 40 is maintained in a reduced pressure state (vacuum state). Therefore, during the transportation of the substrate W between the dry photolithography apparatus 20 and the exposure machine 30 via the transportation space S2 of the connection station 40, the pressure regulating part P3 is used to reduce the pressure in the transportation space S2 to a pressure lower than the atmospheric pressure. As a result, during the transportation of the substrate W, the reaction of the photoreactive thin film is suppressed.

[0045] When the substrate W is transported in the transport space S2, the gate valves V2 and V4 may be kept in an open state. That is, when the substrate W is transported in and out of the pressure adjustment chambers 41 and 42, the gate valves V1 and V3 may be opened while the gate valve V5 is closed. When the substrate W is transported in and out of the exposure machine 30, the gate valve V5 may be opened while the gate valves V1 and V3 are closed. On the other hand, when the substrate W is transported in the transport space S2, the gate valves V2 and V4 may be opened and closed. That is, when the substrate W is transported in and out of the pressure adjustment chambers 41 and 42, the gate valves V1 and V3 may be opened while the gate valves V2 and V4 are closed. When the substrate W is transported in and out between the pressure adjustment chambers 41 and 42 and the transport chamber 43, the gate valves V2 and V4 may be opened while the gate valves V1, V3 and V5 are closed. When the substrate W is transported in and out of the exposure machine 30, the gate valve V5 may be opened while the gate valves V2 and V4 are closed.

[0046] The controller Ctr is configured to control the substrate processing system 1 partially or entirely.

[0047] [Substrate processing method]

[0048] Next, refer to Figure 1 and Figure 2 , a method for processing a substrate W using the substrate processing system 1 is described. When processing the substrate W, the interiors of the dry photolithography apparatus 20, the exposure machine 30, and the connection station 40 are all depressurized to a pressure lower than atmospheric pressure.

[0049] First, the substrate W is taken out from the carrier at the carrying station 10, and the substrate W is carried into the dry photolithography apparatus 20 from the carrying station 10. Then, the substrate W is subjected to photolithography in the photolithography chamber U, and a photoreactive thin film is formed on the surface of the substrate W. Then, the substrate W is transported to the exposure machine 30 via the transport space S2 of the connection station 40. Then, the photoreactive thin film formed on the surface of the substrate W is subjected to exposure.

[0050] Next, the substrate W is transported to the dry photolithography apparatus 20 via the transport space S2 of the connection station 40. Next, the substrate W is subjected to photolithography in the photolithography chamber U, and the exposed photoreactive thin film is developed and the substrate W is etched. After that, the substrate W is transported from the dry photolithography apparatus 20 to the in-and-out station 10 and returned to the carrier. In this way, the processing of the substrate W is completed.

[0051] [effect]

[0052] According to the above example, the connection station 40 is adjacent to the exposure machine 30, and the substrate W is transported between the dry photolithography apparatus 20 and the exposure machine 30 via the transport space S2 of the connection station 40. Therefore, the transport path of the substrate W between the dry photolithography apparatus 20 and the exposure machine 30 is shortened. Therefore, dry photolithography processing can be performed efficiently.

[0053] According to the above example, the pressure regulating unit P3 is used to depressurize the conveying space S2, so that the substrate W is conveyed while maintaining the depressurized state in the exposure space S1 in the exposure machine 30 and the dry photolithography apparatus 20. Therefore, it is not necessary to provide a load lock chamber that switches the internal pressure between the atmospheric pressure state and the depressurized state in the conveying path of the substrate W between the dry photolithography apparatus 20 and the exposure machine 30. As a result, when the substrate W is conveyed, the time required for the pressure switching in the load lock chamber is omitted, so that the dry photolithography process can be performed more efficiently.

[0054] [Modifications]

[0055] It should be understood that the disclosure in this specification is illustrative in all aspects and not restrictive. Various omissions, substitutions, and changes may be made to the above examples without departing from the scope of the claims and the gist thereof.

[0056] (1) Figure 3 As shown in the example, the dry lithography apparatus 20 may be a multi-chamber cluster module in which a transport unit 21 having a transport arm A1 is disposed at the center and a plurality of lithography chambers U are connected around the transport unit 21. Figure 3As shown in the example, the carrying station 10 may be disposed between the dry lithography apparatus 20 and the connection station 40. Alternatively, the transport unit 21 and the connection station 40 may be connected without the carrying station 10, and the carrying station 10 may be connected around the transport unit 21.

[0057] (2) Figure 4 As illustrated, the dry photolithography apparatus 20 may be arranged on the side of the connection station 40, and a wet photolithography apparatus 20A may be arranged between the feed-in / feed-out station 10 and the connection station 40. The wet photolithography apparatus 20A is configured to perform photolithography processing on the substrate mainly using a processing liquid. Therefore, the pressure inside the wet photolithography apparatus 20A is set to a pressure or positive pressure that is substantially the same as the atmospheric pressure. Here, in the present specification, the photolithography processing of the wet photolithography apparatus 20A includes, for example, various processing for patterning the surface of the substrate W, such as the formation processing of a resist film on the surface of the substrate W, the development processing of the resist film after exposure, the heat treatment of the substrate W, the etching processing of the substrate W, etc. (excluding the exposure processing of the resist film). In addition, in the photolithography processing of the substrate W in the wet photolithography apparatus 20A, the substrate W may also be locally treated with gas. Figure 4 In the example, the pressure adjustment unit P3 may adjust the pressure in the conveying space S2 between atmospheric pressure or positive pressure and a pressure substantially the same as the pressure in the exposure space S1 (ie, atmospheric pressure or positive pressure to ultra-high vacuum).

[0058] according to Figure 4 For example, the substrate W processed by the wet photolithography apparatus 20A can be fed into the exposure machine 30 via the connection station 40, and the substrate W processed by the exposure machine 30 can be fed out of the wet photolithography apparatus 20A via the connection station 40. That is, the pressure in the conveying space S2 is adjusted between the atmospheric pressure or the positive pressure and a pressure lower than the atmospheric pressure or the positive pressure by the pressure adjustment unit P3, so that the substrate W processed under the atmospheric pressure or the positive pressure can be fed into and out of the exposure machine 30. Thus, various substrates W can be processed in the substrate processing system 1, and thus, the efficiency of substrate processing can be achieved.

[0059] (3) Figure 5As illustrated, the substrate processing system 1 may further include a connection station 40A (another connection portion) and a pressure adjustment portion P3A. The connection stations 40 and 40A may be stacked in the up-down direction. The connection station 40A may be configured to connect the dry photolithography device 20 to the exposure machine 30. The connection station 40A may be configured similarly to the connection station 40, including a pressure adjustment chamber and a conveying chamber (not shown). The connection station 40A may include a plurality of pressure adjustment chambers arranged in the horizontal direction or in the up-down direction similarly to the connection station 40. The interior of the pressure adjustment chamber and the conveying chamber may constitute a conveying space (not shown) for conveying the substrate W. In the Figure 5 In the example, the transport space of the connection station 40A is adjacent to the internal space of the dry photolithography apparatus 20 and adjacent to the exposure space S1 of the exposure machine 30.

[0060] The pressure adjustment unit P3A is connected to the pressure adjustment chamber and the conveying chamber of the connection station 40A. Alternatively, the pressure adjustment unit P3A is configured to adjust the pressure in the conveying space of the pressure adjustment chamber and the conveying chamber of the connection station 40A between atmospheric pressure or positive pressure and a pressure lower than the atmospheric pressure or positive pressure based on a control signal from the controller Ctr. Alternatively, the pressure adjustment unit P3A adjusts the pressure in the conveying space between atmospheric pressure or positive pressure and a pressure equivalent to the pressure in the exposure space S1 (i.e., atmospheric pressure or positive pressure to ultra-high vacuum).

[0061] according to Figure 5 For example, a substrate processed by an external device can be sent to the exposure machine 30 via the dry photolithography device 20 and the connection station 40A. Figure 5 For example, the substrate W processed by the exposure machine 30 can be sent to an external device via the dry photolithography apparatus 20 and the connection station 40A.

[0062] Alternatively, when the substrate W is transported between the connection station 40A and an external device, the pressure adjustment unit P3A may be operated so that the pressure in the connection station 40A is equal to the atmospheric pressure or positive pressure. In this case, in order to prevent the decompression space inside the dry photolithography apparatus 20 from being opened to the atmosphere, a passage for substrate transport separated from the decompression space and connected to the connection station 40A may be provided inside the dry photolithography apparatus 20. On the other hand, when the substrate W is transported between the connection station 40A and the exposure machine 30, the pressure adjustment unit P3A may be operated so that the pressure in the connection station 40A is equal to the pressure in the exposure space S1 of the exposure machine 30.

[0063] In this way, the pressure in the transport space of the connection station 40A is adjusted between atmospheric pressure or positive pressure and a pressure lower than the atmospheric pressure or positive pressure by the pressure adjustment unit P3A, so that the substrate W processed under the atmospheric pressure or positive pressure can be transported to and from the exposure machine. Therefore, various substrates can be processed in the substrate processing system 1, so that the efficiency of substrate processing can be achieved.

[0064] (4) Figure 6 As shown in the example, the substrate processing system 1 may further include a loading and unloading station 10A, a wet photolithography apparatus 20A, a connection station 40A, and a pressure adjustment unit P3A. The loading and unloading station 10A may be configured in the same manner as the loading and unloading station 10. The wet photolithography apparatus 20A may also have the same configuration as the pressure adjustment unit P3A. Figure 4 The connection station 40A and the pressure adjustment unit P3A may be respectively connected to the wet photolithography apparatus 20A. Figure 5 The connection station 40A and the pressure adjustment unit P3A shown in the example have the same structure. The carrying-in / out station 10A, the wet photolithography apparatus 20A, and the connection station 40A may be arranged in a row in the horizontal direction.

[0065] according to Figure 6 For example, the substrate W processed by the wet lithography apparatus 20A can be fed into the exposure machine 30 via the connection station 40A, and the substrate W processed by the exposure machine 30 can be fed out of the wet lithography apparatus 20A via the connection station 40A. That is, the pressure in the transport space of the connection station 40A is adjusted between atmospheric pressure or positive pressure and a pressure lower than the atmospheric pressure or positive pressure by the pressure adjustment unit P3A, so that the substrate W processed under the atmospheric pressure or positive pressure can be fed into and out of the exposure machine 30. Therefore, various substrates W can be processed in the substrate processing system 1, and thus, the efficiency of substrate processing can be achieved.

[0066] like Figure 6 As shown in the example, the feeding station 10, the dry photolithography apparatus 20 and the connection station 40 may constitute a first unit. Alternatively, the feeding station 10A, the wet photolithography apparatus 20A and the connection station 40A may constitute another second unit. Alternatively, in the substrate processing system 1, the first unit and the second unit may be stacked in the vertical direction. In this case, since the connection stations 40 and 40A are arranged in the vertical direction, the installation area of ​​the substrate processing system 1 relative to the ground becomes smaller when viewed from above. Therefore, the compactness of the substrate processing device can be achieved. Figure 6 (a) shows an example of the substrate processing system 1 in which the second unit is stacked on the first unit. Figure 6 (b) shows an example of the substrate processing system 1 in which the first unit is stacked on the second unit.

[0067] (5) Figure 7As shown in the example, the substrate processing system 1 may further include a connection station 40A and a pressure adjustment unit P3A. Alternatively, the connection stations 40 and 40A may be arranged in a horizontal direction. In this case, since the connection stations 40 and 40A are arranged in a horizontal direction, the structure for transporting the substrate W to the connection stations 40 and 40A respectively can be simplified. Figure 7 The method shown is similar to Figure 5 and Figure 6 In the same manner as the illustrated example, the pressure in the transport space of the connection station 40A is adjusted between atmospheric pressure or positive pressure and a pressure lower than the atmospheric pressure or positive pressure by the pressure adjustment unit P3A, so that the substrate W processed under the atmospheric pressure or positive pressure can be transported to and from the exposure machine. Therefore, various substrates can be processed in the substrate processing system 1, and thus, the efficiency of substrate processing can be improved.

[0068] like Figure 7 As shown in (a), the connection station 40A may be configured to connect the dry photolithography device 20 to the exposure machine 30. The connection station 40A may be configured in the same manner as the connection station 40, including a pressure adjustment chamber and a conveying chamber (not shown). The interior of the pressure adjustment chamber and the conveying chamber may constitute a conveying space (not shown) for conveying the substrate W. Figure 5 In the example of FIG. 4 , the transport space of the connection station 40A is adjacent to the internal space of the dry photolithography apparatus 20 and adjacent to the exposure space S1 of the exposure machine 30. Figure 7 In the example (a), Figure 5 Similarly to the example, in order to prevent the decompression space inside the dry photolithography apparatus 20 from being opened to the atmosphere, a passage for conveying substrates separated from the decompression space and connected to the connection station 40A may be provided inside the dry photolithography apparatus 20.

[0069] like Figure 7 As shown in (b) of the example, it can also be Figure 6 Similarly to the example of , the delivery station 10, the dry photolithography device 20 and the connection station 40 constitute a first unit. Figure 6 Similarly to the example of , the carrying in and carrying out station 10A, the wet photolithography apparatus 20A and the connection station 40A constitute another second unit. Figure 6 Unlike the example, in the substrate processing system 1, the first unit and the second unit are arranged in the horizontal direction.

[0070] (6) Figure 8As illustrated, the substrate processing system 1 may further include an auxiliary connection station 50 (auxiliary connection unit) and a pressure adjustment unit P4. Alternatively, the auxiliary connection station 50 may be disposed between the dry photolithography apparatus 20 and the connection station 40. Alternatively, a gate valve V6 may be provided between the auxiliary connection station 50 and the dry photolithography apparatus 20. Alternatively, a gate valve V7 may be provided between the auxiliary connection station 50 and the connection station 40. The gate valves V6 and V7 are configured to open and close based on a control signal from the controller Ctr. The gate valves V6 and V7 are opened when the substrate W is transported between the dry photolithography apparatus 20 and the connection station 40.

[0071] Alternatively, the pressure regulating unit P4 (suction unit) may include an exhaust pump. Alternatively, the pressure regulating unit P4 may be operated when the gate valves V6 and V7 are opened when the substrate W is transported between the dry photolithography apparatus 20 and the connection station 40. The operation of the pressure regulating unit P4 forms an air flow from the connection station 40 to the auxiliary connection station 50 (see Figure 8 ). Therefore, the pressure adjustment unit P4 may adjust the pressure in the auxiliary connection station 50 to a pressure that is equal to or greater than the pressure in the internal space of the dry photolithography apparatus 20 and lower than the pressure in the conveying space S2 of the connection station 40. In this case, the pressure adjustment unit P4 is used to form an airflow toward the auxiliary connection station 50, so that it is difficult for microscopic substances and gases generated in the dry photolithography apparatus 20 when processing the substrate W to pass through the auxiliary connection station 50 and reach the connection station 40 side. Therefore, it is possible to suppress the contamination of the apparatus by the microscopic substances and gases.

[0072] Alternatively, the pressure regulating unit P4 (another pressure regulating unit) may include a gas inlet valve (not shown) in addition to the exhaust pump. Alternatively, the pressure regulating unit P4 (another pressure regulating unit) may regulate the pressure in the auxiliary connection station 50 between the pressure in the internal space of the dry photolithography apparatus 20 and the pressure in the exposure space S1 of the exposure machine 30. For example, when the substrate W is transported between the dry photolithography apparatus 20 and the auxiliary connection station 50, the pressure regulating unit P4 may operate in such a manner that the pressure in the auxiliary connection station 50 is equal to the pressure in the internal space of the dry photolithography apparatus 20. In this state, the gate valve V6 may be opened while the gate valve V7 is closed, and the substrate W may be transported in and out between the dry photolithography apparatus 20 and the auxiliary connection station 50. On the other hand, when the substrate W is transported between the auxiliary connection station 50 and the connection station 40, the pressure regulating unit P4 may operate in such a manner that the pressure in the auxiliary connection station 50 is equal to the pressure in the transport space S2 of the connection station 40. In this state, the gate valve V7 may be opened while the gate valve V6 is closed, and the substrate W may be carried in and out between the auxiliary connection station 50 and the connection station 40 .

[0073] According to the method of Example 8, the pressure in the relatively narrow space in the auxiliary connection station 50 is adjusted by the pressure adjustment unit P4, rather than adjusting the pressure in the relatively wide space in the exposure machine 30 and the dry photolithography apparatus 20. Therefore, the pressure adjustment is performed quickly in the auxiliary connection station 50, and the substrate W is transported between the exposure machine 30 and the dry photolithography apparatus 20 while maintaining the magnitude relationship between the pressure in the exposure machine 30 and the pressure in the dry photolithography apparatus 20. Therefore, when the substrate W is transported, the time required for the pressure adjustment in the exposure machine 30 and the dry photolithography apparatus 20 is omitted, so that the dry photolithography process can be performed more efficiently.

[0074] (7) In the above example, a moisture supply unit (not shown) for supplying moisture to the substrate W may be provided inside the connection station 40 or the lithography apparatus (including the dry lithography apparatus 20 and the wet lithography apparatus 20A, respectively). For example, the moisture supply unit may be configured to supply moisture in a gaseous or liquid state toward the substrate W in the space where the substrate W is placed. The moisture supply unit may be configured to supply moisture to a positive pressure space or to supply moisture to a reduced pressure space. The substrate W to which moisture is supplied may be the substrate W before exposure processing or the substrate W after exposure processing.

[0075] [Other examples]

[0076] Example 1. An example of a substrate processing device includes: a dry photolithography device, which is configured to perform photolithography processing on a substrate mainly using gas; and a connecting portion, which is configured to connect an exposure machine to the dry photolithography device, and the exposure machine is configured to expose the substrate. The connecting portion includes a conveying space adjacent to the exposure space of the exposure machine and used to convey the substrate between the exposure machine and the dry photolithography device. In this case, the connecting portion is adjacent to the exposure machine, and the substrate is conveyed between the dry photolithography device and the exposure machine via the conveying space of the connecting portion. Therefore, the conveying path of the substrate between the dry photolithography device and the exposure machine is shortened. Therefore, dry photolithography processing can be performed efficiently.

[0077] Example 2. According to the device of Example 1, the substrate processing device may also include a decompression unit, which is configured to reduce the pressure in the conveying space to a pressure less than atmospheric pressure during the conveying process of the substrate through the conveying space. Here, the exposure space in the exposure machine and the dry photolithography device are usually decompressed compared to the atmospheric pressure. In the case of Example 2, since the decompression in the conveying space is performed by the decompression unit, the substrate is conveyed while maintaining the decompressed state in the exposure space in the exposure machine and the dry photolithography device. Therefore, it is not necessary to set a load lock chamber that switches the internal pressure between the atmospheric pressure state and the decompressed state in the conveying path of the substrate between the dry photolithography device and the exposure machine. As a result, when the substrate is conveyed, the time required for the pressure switching in the load lock chamber is omitted, so that the dry photolithography process can be performed more efficiently.

[0078] Example 3. According to the device of Example 1 or Example 2, the substrate processing device may further include: another connection part, which is configured to connect the exposure machine with the dry photolithography device; and a pressure adjustment part, the other connection part includes another conveying space adjacent to the exposure space of the exposure machine and used to convey the substrate between the exposure machine and the dry photolithography device, and the pressure adjustment part is configured to adjust the pressure in the other conveying space between atmospheric pressure and a pressure less than atmospheric pressure during the conveyance of the substrate through the other conveying space. In this case, for example, a substrate processed by an external device can be fed into the exposure machine via the dry photolithography device and the other connection part, and a substrate processed by the exposure machine can be sent out to an external device via the dry photolithography device and the other connection part. That is, the pressure in the other conveying space is adjusted between atmospheric pressure and a pressure less than atmospheric pressure by the pressure adjustment part, so that the substrate processed under atmospheric pressure can be fed into and out of the exposure machine. Therefore, various substrates can be processed in the substrate processing device, and thus, the efficiency of substrate processing can be achieved.

[0079] Example 4. According to the device of Example 1 or Example 2, the substrate processing device may further include: a wet photolithography device, which is configured to perform photolithography processing on the substrate mainly using a processing liquid; another connection part, which is configured to connect the exposure machine and the wet photolithography device; and a pressure adjustment part, wherein the other connection part includes another conveying space adjacent to the exposure space of the exposure machine and used to convey the substrate between the exposure machine and the wet photolithography device, and the pressure adjustment part is configured to adjust the pressure in the other conveying space between atmospheric pressure and a pressure less than atmospheric pressure during the conveyance of the substrate through the other conveying space. In this case, the substrate processed by the wet photolithography device can be conveyed into the exposure machine through the other connection part, and the substrate processed by the exposure machine can be conveyed out of the wet photolithography device through the other connection part. That is, the pressure in the other conveying space is adjusted between atmospheric pressure and a pressure less than atmospheric pressure by the pressure adjustment part, so that the substrate processed under atmospheric pressure can be conveyed into and out of the exposure machine. Therefore, various substrates can be processed in the substrate processing device, and thus, the efficiency of substrate processing can be achieved.

[0080] Example 5. According to the device of Example 3 or Example 4, the connection part and the other connection part may be arranged in the vertical direction. In this case, since the connection part and the other connection part are arranged in the vertical direction, the installation area of ​​the substrate processing device relative to the ground becomes smaller when viewed from above. Therefore, the substrate processing device can be made compact.

[0081] Example 6. In the device according to Example 3 or Example 4, the connection part and the other connection part may be arranged in the horizontal direction. In this case, since the connection part and the other connection part are arranged in the horizontal direction, the structure when the substrate is transported to the connection part and the other connection part respectively can be simplified.

[0082] Example 7. According to any of the devices in Examples 1 to 6, the substrate processing device may further include: an auxiliary connection portion, which is arranged between the connection portion and the dry photolithography device; and a suction portion, which is configured to form an airflow from the connection portion to the auxiliary connection portion. In this case, since the airflow to the auxiliary connection portion is formed by the suction portion, it is difficult for microscopic substances and gases generated in the dry photolithography device when processing the substrate to pass through the auxiliary connection portion and reach the connection portion side. Therefore, it is possible to suppress the contamination of the device by the microscopic substances and gases.

[0083] Example 8. According to any one of the apparatuses in Examples 1 to 7, the substrate processing apparatus may further include: an auxiliary connection portion, which is arranged between the connection portion and the dry photolithography apparatus; and another pressure adjustment portion, which is configured to adjust the pressure in the auxiliary connection portion between the pressure in the exposure machine and the pressure in the dry photolithography apparatus. Here, the exposure space in the exposure machine and the dry photolithography apparatus are usually decompressed compared to the atmospheric pressure, but the pressure in the exposure space in the exposure machine tends to be set lower than the pressure in the dry photolithography apparatus. In the case of Example 8, the pressure in the relatively narrow space in the auxiliary connection portion is adjusted by the other pressure adjustment portion, rather than adjusting the pressure in the relatively wide space in the exposure machine and the dry photolithography apparatus. Therefore, the pressure is adjusted quickly in the auxiliary connection portion, and the substrate is transported between the exposure machine and the dry photolithography apparatus while maintaining the magnitude relationship between the pressure in the exposure machine and the pressure in the dry photolithography apparatus. Therefore, when transporting the substrate, the time required for pressure adjustment in the exposure machine and the dry photolithography apparatus is omitted, so that dry photolithography processing can be performed more efficiently.

[0084] Example 9. An example of a substrate processing method includes: transporting a substrate to a dry photolithography apparatus, the dry photolithography apparatus being configured to perform photolithography processing on the substrate mainly using gas; in the dry photolithography apparatus, performing photolithography processing on the substrate mainly using gas; transporting the photolithography-processed substrate to the exposure machine via a connection portion connected to the dry photolithography apparatus and an exposure machine; and exposing the substrate in the exposure machine. The connection portion includes a transport space adjacent to the exposure space of the exposure machine and used to transport the substrate between the exposure machine and the dry photolithography apparatus. In this case, the same effect as the apparatus of Example 1 can be obtained.

Claims

1. A substrate processing device, wherein: The substrate processing device comprises: A dry photolithography apparatus, which is configured to perform photolithography processing on a substrate mainly using gas; and a connecting portion configured to connect an exposure device to the dry photolithography device, wherein the exposure device is configured to expose the substrate, The connection portion includes a conveying space adjacent to an exposure space of the exposure machine and used to convey the substrate between the exposure machine and the dry photolithography apparatus.

2. The substrate processing apparatus according to claim 1, wherein: The substrate processing apparatus further includes a decompression unit configured to reduce the pressure in the conveyance space to a pressure lower than atmospheric pressure during the conveyance of the substrate through the conveyance space.

3. The substrate processing apparatus according to claim 1, wherein: The substrate processing device also includes: another connection portion configured to connect the exposure machine to the dry photolithography apparatus; and Pressure adjustment unit, The another connecting portion includes another conveying space adjacent to the exposure space of the exposure machine and used for conveying the substrate between the exposure machine and the dry photolithography device. The pressure adjustment unit is configured to adjust the pressure in the other transport space between atmospheric pressure and a pressure lower than atmospheric pressure during transport of the substrate through the other transport space.

4. The substrate processing apparatus according to claim 1, wherein: The substrate processing device also includes: A wet lithography apparatus is configured to perform lithography processing on a substrate mainly using a processing liquid; another connecting portion configured to connect the exposure machine to the wet photolithography apparatus; and Pressure adjustment unit, The another connecting portion includes another conveying space adjacent to the exposure space of the exposure machine and used for conveying the substrate between the exposure machine and the wet photolithography device. The pressure adjustment unit is configured to adjust the pressure in the other transport space between atmospheric pressure and a pressure lower than atmospheric pressure during transport of the substrate through the other transport space.

5. The substrate processing apparatus according to claim 3 or 4, wherein: The connection portion and the other connection portion are arranged in a vertical direction.

6. The substrate processing apparatus according to claim 3 or 4, wherein: The connection portion and the other connection portion are arranged in a horizontal direction.

7. The substrate processing apparatus according to any one of claims 1 to 4, wherein: The substrate processing device also includes: an auxiliary connection portion, which is disposed between the connection portion and the dry photolithography device; and The suction portion is configured to form an airflow from the connection portion to the auxiliary connection portion.

8. The substrate processing apparatus according to any one of claims 1 to 4, wherein: The substrate processing device also includes: an auxiliary connection portion, which is disposed between the connection portion and the dry photolithography device; and Another pressure adjustment unit is configured to adjust the pressure in the auxiliary connection unit between the pressure in the exposure machine and the pressure in the dry lithography apparatus.

9. A substrate processing method, wherein: The substrate processing method comprises: The substrate is transported to a dry photolithography apparatus, wherein the dry photolithography apparatus is configured to perform photolithography processing on the substrate mainly using gas; In the dry photolithography apparatus, the substrate is photolithographically processed mainly by using gas; The substrate subjected to the photolithography process is transported to the exposure machine via a connection portion connected to the dry photolithography apparatus and the exposure machine; and exposing the substrate in the exposure machine, The connection portion includes a conveying space adjacent to an exposure space of the exposure machine and used to convey the substrate between the exposure machine and the dry photolithography apparatus.

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