T-type three-level three-phase inverter IGBT radiation electromagnetic field distribution prediction method

Abstract

The invention belongs to the technical field of electromagnetic interference prediction, and discloses a T-type three-level inverter IGBT radiation electromagnetic field distribution prediction method, which comprises the following steps: S1, on the basis of an inverter SPWM control principle, building a simulation circuit model of a T-type three-level inverter in a simple lorer; s2, establishing an IGBT (Insulated Gate Bipolar Translator) parameter model in simple lorer; s3, inputting the IGBT model parameters obtained in the step S2 into the simulation circuit model established in the step S1; and S4, an IGBT 3D model is established in ANSYS MAXWELL, parameters of a user-defined material are set, and mesh generation calculation is carried out. According to the method, the internal space radiation field of the IGBT is finally obtained by setting the model and calculating related parameters, and the influence of the radiation field in the single IGBT is predicted according to the corresponding radiation field.

Description

Technical Field

[0001] The invention belongs to the technical field of electromagnetic interference prediction, and in particular relates to a method for predicting the distribution of electromagnetic field radiated by an IGBT of a T-type three-level three-phase inverter. Background Art

[0002] As the main component of the T-type three-level inverter, IGBT may emit strong electromagnetic interference when it works normally. During the on-off or conversion process of IGBT, the voltage and current jump in a short time, thus forming electromagnetic interference. The rapid development of power electronics technology has greatly promoted the prosperity of the power industry. Among them, switching devices constitute an indispensable cornerstone of power electronic equipment. As power electronic devices continue to evolve towards high power and high frequency, the electromagnetic interference caused by them to the surrounding environment has become increasingly prominent and has become a key issue that needs to be solved urgently. As a composite semiconductor device with full control characteristics, the insulated gate bipolar transistor (IGBT) has been deeply applied in a wide range of fields due to its excellent switching frequency characteristics, convenient controllability, high input impedance and low output impedance. However, the high dv / dt (voltage change rate) and high di / dt (current change rate) generated by IGBT during the switching action also cause electromagnetic compatibility problems that cannot be ignored. These problems pose a potential threat to the stable operation of the system. In high-power drive IGBT systems, di / dt can reach 2kA / us, and 30nH of stray inductance can stimulate 60V of voltage interference.

[0003] Tao.Q and other scholars have developed a piecewise linear model of IGBT modules for electromagnetic interference (EMI) simulation, which has the characteristics of high accuracy and simplicity. This model is not built based on physical mechanisms, but consists of a set of piecewise linear circuits, whose parameters can be easily obtained directly from data sheets or simple device measurements. With its ease of use and sufficient accuracy, this model well meets the needs of electromagnetic interference modeling.

[0004] Yang and other researchers used active voltage control technology to control the IGBT gate drive, shaping the IGBT switching action into a series of determined ramp waveforms, and then using multiple slope waveforms for fitting approximation. The research results show that the use of this multiple slope switch approximation method for electromagnetic interference prediction is not only more accurate, but also less expensive and easier to implement.

[0005] Palmer.PR et al. proposed a simple IGBT behavioral model for electromagnetic interference time domain analysis. This model not only fully considers the behavioral characteristics of the IGBT during operation, but also incorporates the characteristic factors of the diode. During the switching transient process, this model can provide finer waveform details compared to the classic IGBT model. Therefore, the model can also provide a spectrum diagram with a certain degree of accuracy in the frequency domain. The authors used this model to perform system time domain simulation and deeply analyzed the intrinsic relationship between the power converter layout and the electromagnetic interference level. The simulation results show that the busbar design should be as close to the converter housing as possible. This finding provides useful reference suggestions for the design of power converters.

[0006] Shim and other research teams proposed a high-frequency IGBT model based on data sheets and measured data, which is intended for the analysis of inverter electromagnetic interference. In order to build a simulation environment that is close to the actual working state of the full-bridge inverter circuit, Shim's team extracted the parasitic parameters on the IGBT module PCB board and modeled the lumped components including the wires by fitting the impedance curve up to 30MHz. Subsequently, they used two IGBT models (the proposed IGBT model and the system-level IGBT model) for simulation and compared the simulation results with the measurement results. The results show that in the frequency range of 100kHz to 3MHz, the proposed IGBT model has higher accuracy than the system-level IGBT model.

[0007] Xiao Fang and other scholars proposed a new frequency domain modular modeling method, which can be used to predict the conducted electromagnetic interference in IGBT modules. This method is based on the IGBT module under specific switching conditions, constructs a Norton equivalent circuit, and fully considers the influencing factors such as the current waveform, impedance parameters and propagation path of the electromagnetic interference source, thereby constructing a complete electromagnetic interference prediction model for IGBT modules.

[0008] Huang Huazhen and other researchers proposed an IGBT segmented transient model that takes parasitic oscillation into account by analyzing the effects of relevant parasitic parameters in the circuit and the nonlinear capacitance of the IGBT module on the switching transient. They built an experimental platform and compared the waveforms predicted by the model with the actual waveforms. The experimental results show that incorporating parasitic parameters into the consideration range of the IGBT equivalent model can significantly improve the model's prediction accuracy for the electromagnetic interference spectrum.

[0009] Judging from the published literature, the existing research results are mainly focused on the study of IGBT equivalent circuit models and the prediction and suppression of common-mode conducted interference generated by stray inductance and stray capacitance. There is less research on IGBT radiated electromagnetic interference. The existing radiation models all build equivalent antenna models to simulate their near-field and far-field radiation, but cannot simulate the impact of radiated electromagnetic interference on a single IGBT itself. Most of them only consider the electromagnetic interference generated at the moment of turn-on and turn-off, and do not consider the impact of SPWM control strategy on the electromagnetic radiation field of a single IGBT.

[0010] Therefore, the present application proposes a method for predicting the distribution of electromagnetic field radiated by IGBT of a T-type three-level three-phase inverter. Summary of the invention

[0011] In view of the deficiencies of the prior art, the present invention provides a method for predicting the distribution of electromagnetic field radiated by IGBT of a T-type three-level three-phase inverter, which makes up for the defect that the prior art does not consider the influence of SPWM control strategy on the electromagnetic radiation field of a single IGBT.

[0012] To achieve the above object, the present invention provides the following technical solutions: A method for predicting the distribution of electromagnetic field radiated by an IGBT of a T-type three-level inverter, the method comprising the following steps: S1. Based on the inverter SPWM control principle, build a simulation circuit model of T-type three-level inverter in Simplorer; S2. Establish IGBT parameter model in Simplorer according to IGBT product manual; S3, inputting the IGBT model parameters obtained in step S2 into the simulation circuit model built in step S1; S4. Create an IGBT 3D model in ANSYS MAXWELL, set custom material parameters, and perform meshing calculations; S5, setting a conduction path based on the custom material parameters set in step S4; S6. Use Simplorer and MAXWELL collaborative simulation interface to establish a joint simulation model, and perform joint simulation calculations to obtain the IGBT spatial radiation electromagnetic field distribution.

[0013] As a further solution of the present invention: Step S1 specifically includes the following steps: S11. Build a simulation circuit model of a T-type three-level inverter in Simplorer, and adopt a common-collector T-type three-level topology three-phase SWPM strategy; S12. In step S11, the carrier wave is a symmetrical triangle wave, and the modulating wave is a three-phase sine wave; S13, compare the positive cycle of the modulated wave with the positive carrier, and compare the negative cycle of the modulated wave with the negative carrier; S14, generating gate PWM signal; S15, sending the gate PWM signal in S14 to the inverter.

[0014] As a further solution of the present invention: step S2 is specifically the IGBT parameterized modeling using the Basic dynamic model in Simplorer.

[0015] As a further solution of the present invention: Step S4 is specifically that in the ANSYS MAXWELL IGBT 3D model, the chip part material is set to be customized, the resistivity curve is set to be the copper resistivity curve, the magnetic permeability curve is set to be the silicon magnetic permeability curve, and the grid division adopts an adaptive grid and performs encryption processing.

[0016] Compared with the prior art, the present invention has the following beneficial effects: By setting the model and calculating the relevant parameters, the radiation field in the internal space of the IGBT is finally obtained, and the influence of the radiation field inside a single IGBT is predicted based on the corresponding radiation field. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the prior art descriptions. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without creative work. Among them: Figure 1 is a schematic diagram of an embodiment of the present invention; Figure 2 is a simulation circuit topology diagram of an embodiment of the present invention; Figure 3 1 is a diagram of simulation results of turning on and off the IGBT of an embodiment of the present invention; Figure 4 It is a diagram of an IGBT 3D model established in ANSYS MAXWELL according to an embodiment of the present invention; Figure 5 is a diagram of a field-road collaboration model according to an embodiment of the present invention; Figure 6 is a position distribution diagram of IGBT space calculation points according to an embodiment of the present invention; Figure 7 1 is a diagram showing the calculation result of the magnetic field strength of the IGBT's own spatial calculation point P1 according to an embodiment of the present invention; Figure 81 is a diagram showing the calculation result of the magnetic field strength at the IGBT space calculation point P2 according to an embodiment of the present invention; Fig. 9 1 is a diagram showing the calculation results of the magnetic field strength at the spatial calculation point P3 of the IGBT itself according to an embodiment of the present invention. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0019] Example See also Figure 1 As shown, the present invention provides a method for predicting the distribution of electromagnetic field radiated by an IGBT of a T-type three-level inverter, the method comprising the following steps: 1. Based on the SPWM control principle of the common collector T-type three-level three-phase inverter, build a T-type three-level inverter topology simulation circuit model in Simplorer. Figure 2 As shown; 2. Use a certain model of IGBT to create an IGBT dynamic model in Simplorer. Select BasicDynamic IGBT model as the model type. According to the PDF document information of the product manual Datasheet, enter the rated voltage of 900V, the rated current of 1400A, the rated reference temperature of 150℃, the gate on-resistance of 0.47Ω, the gate off-resistance of 0.68Ω, the gate drive voltage of ±15V, and enter the transfer characteristic curve and output characteristic curve of IGBT in the dataset. Use the default values ​​for the remaining parameters. After completing the parameter setting, run the simulation to get the simulation results, such as Figure 3 The simulation results of IGBT on and off process are shown, IGBT on time t_on = 0.3us and off time t_off = 1.6us; 3. Based on step 2, the IGBT on-time t_on=0.3us and off-time t_off=1.6us obtained in step 2 are input into the simplorer built in step 1 to build the simulation circuit IGBT parameter setting of the T-type three-level inverter, and the sawtooth wave carrier frequency of the SPWM signal generator is set to 12000HZ, and the sine modulation wave frequency is set to 200HZ; 4. Create an IGBT 3D model in ANSYS MAXWELL, such as Figure 4As shown, set custom material parameters, set the chip material to custom, set the resistivity curve to copper resistivity curve, set the magnetic permeability curve to silicon magnetic permeability curve, and use adaptive mesh for mesh division and perform encryption processing; 5. Set the conduction path based on the custom material parameters set in step 4, and add an external excitation interface to the simulation circuit model of the T-type three-level inverter established in step 1; 6. Use Simplorer and MAXWELL co-simulation interface to establish a joint simulation model such as Figure 5 As shown, the joint simulation calculation is performed to obtain three points P1, P2, and P3 in the IGBT space (positions are shown in Figure 6 The radiated magnetic field strength is as shown in Figure 7 , Figure 8 and Fig. 9 shown.

[0020] In addition, it should be noted that the Simplorer and MAXWELL collaborative simulation interface is used to build Figure 5 The joint simulation model shown in the figure uses the SPWM12-channel signal generator provided by the software to output the IGBT gate conduction signal. Figure 5 The meanings of the signal names are as follows: (1) "T1_in" and "T1_out" are the signal inflow and outflow ends of IGBT tube T1 respectively; (2) "T2_in" and "T2_out" are the signal inflow and outflow ends of IGBT tube T2 respectively; (3) "T3_in" and "T3_out" are the signal inflow and outflow terminals of IGBT tube T3 respectively; (4) "T4_in" and "T4_out" are the signal inflow and outflow ends of IGBT tube T4 respectively; (5) "T5_in" and "T5_out" are the signal inflow and outflow ends of IGBT tube T5 respectively; (6) "T6_in" and "T6_out" are the signal inflow and outflow terminals of IGBT tube T6 respectively; (7) "T7_in" and "T7_out" are the signal inflow and outflow terminals of IGBT tube T7 respectively; (8) "T8_in" and "T8_out" are the signal inflow and outflow terminals of IGBT tube T8 respectively; (9) "T9_in" and "T9_out" are the signal inflow and outflow terminals of IGBT tube T9 respectively; (10) "T10_in" and "T10_out" are the signal inflow and outflow terminals of IGBT tube T10 respectively; (11) "T11_in" and "T11_out" are the signal inflow and outflow terminals of IGBT tube T11 respectively; (12) "T12_in" and "T12_out" are the signal inflow and outflow terminals of IGBT tube T12 respectively; (13) “Fieldcurrent_in” is the input signal of the road model coupled field model; (14) “Fieldcurrent_out” is the output signal of the road model coupled field model.

[0021] Specifically, the present invention builds an SPWM control simulation circuit of a T-type three-level inverter in Simplorer, establishes a parameter model according to an IGBT product manual, inputs these parameters into the simulation circuit model, creates a 3D model of the IGBT in ANSYS MAXWELL, sets material parameters and performs meshing, sets a conduction path in MAXWELL, and performs joint simulation through the collaborative simulation interface of Simplorer and MAXWELL to obtain the spatial radiation electromagnetic field distribution of the IGBT.

[0022] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present invention may be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present invention, which should all be included in the scope of the claims of the present invention.

Claims

1. A method for predicting the electromagnetic field distribution of T-type three-level inverter IGBT radiation, characterized in that: The method comprises the following steps: S1. Based on the inverter SPWM control principle, build a simulation circuit model of T-type three-level inverter in Simplorer; S2. Establish IGBT parameter model in Simplorer; S3, inputting the IGBT model parameters obtained in step S2 into the simulation circuit model built in step S1; S4. Create an IGBT 3D model in ANSYS MAXWELL, set custom material parameters, and perform meshing calculations; S5, setting a conduction path based on the custom material parameters set in step S4; S6. Use Simplorer and MAXWELL collaborative simulation interface to establish a joint simulation model, and perform joint simulation calculations to obtain the IGBT spatial radiation electromagnetic field distribution.

2. The method for predicting the electromagnetic field distribution of T-type three-level inverter IGBT according to claim 1, characterized in that: Step S1 specifically includes the following steps: S11. Build a simulation circuit model of a T-type three-level inverter in Simplorer, and adopt a common-collector T-type three-level topology three-phase SWPM strategy; S12. In step S11, the carrier wave is a symmetrical triangle wave, and the modulating wave is a three-phase sine wave; S13, compare the positive cycle of the modulated wave with the positive carrier, and compare the negative cycle of the modulated wave with the negative carrier; S14, generating gate PWM signal; S15, sending the gate PWM signal in S14 to the inverter.

3. The method for predicting the electromagnetic field distribution radiated by the T-type three-level inverter IGBT according to claim 1, characterized in that: Step S2 is specifically the IGBT parameterized modeling using the Basic dynamic model in Simplorer.

4. The method for predicting the electromagnetic field distribution of T-type three-level inverter IGBT according to claim 1, characterized in that: Step S4 specifically includes setting the chip material to custom in the ANSYS MAXWELL IGBT 3D model, setting the resistivity curve to the copper resistivity curve, setting the magnetic permeability curve to the silicon magnetic permeability curve, and using an adaptive grid for mesh division and performing encryption processing.

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