Semiconductor process chamber and semiconductor process equipment

Abstract

The invention discloses a semiconductor process chamber and semiconductor process equipment, and relates to the field of semiconductors. The semiconductor process chamber comprises a cavity, a bearing assembly and a connecting assembly, the bearing assembly comprises a plurality of first bearing pieces and a plurality of second bearing pieces, one first bearing piece and the adjacent second bearing piece are mutually spaced to form a process space, the first bearing piece is provided with a plurality of feed-in ends, and the second bearing piece is provided with a plurality of grounding ends; the connecting assembly comprises a connecting strip, a plurality of elastic components, a plurality of radio frequency connecting blocks and a plurality of grounding connecting blocks; the connecting strip comprises a plurality of branch ends which are connected in parallel; the plurality of radio frequency connection blocks are respectively connected with the plurality of branch ends through a part of elastic components; a plurality of feed-in ends of each first bearing piece are respectively connected with a plurality of radio frequency connecting blocks, and a plurality of grounding ends of each second bearing piece are respectively connected with a plurality of grounding connecting blocks. The PECVD equipment can solve the problem that the film forming uniformity of the existing PECVD equipment is influenced by the standing wave effect and the like.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and specifically relates to a semiconductor process chamber and semiconductor process equipment. Background Art

[0002] The amorphous silicon film layer in the heterojunction (HJT) battery plays a key role in improving the battery opening voltage. Amorphous silicon contains a large number of hydrogen ions, which can saturate the defects in the silicon substrate and play a role in hydrogen passivation. At present, the mainstream technologies for depositing amorphous silicon in HJT battery technology are plate-type plasma enhanced chemical vapor deposition (PECVD) equipment and tubular PECVD equipment.

[0003] With the development of solar cell technology, the low-frequency (KHz level, such as 20-400KHz, etc.) power supply used by traditional PECVD equipment can no longer meet the process requirements of heterojunction (HJT) batteries, because the ion energy in the plasma generated by the low-frequency power supply is high, which severely bombards the wafer, resulting in poor density of the deposited film. Therefore, PECVD equipment has introduced radio frequency (MHz level, such as 2-30MHz, etc.) and very high frequency power supply (MHz level, such as 30-300MHz, etc.), and the plasma generated has the advantages of high density and small ion energy bombardment, so that the deposited film is denser and less damaged, so as to meet the process requirements of heterojunction (HJT) batteries.

[0004] However, when PECVD equipment uses radio frequency or very high frequency power supply, the standing wave effect is the main factor affecting the uniformity of film formation. The standing wave effect means that when the electrical size of the radio frequency power supply or very high frequency power supply is comparable to the mechanical size, the mechanical structure will be regarded as a transmission line, and the electric field distribution on the mechanical structure will form standing waves, affecting the uniformity of film formation of the equipment. Summary of the invention

[0005] The purpose of the embodiments of the present application is to provide a semiconductor process chamber and semiconductor process equipment, which can solve the problem that the current PECVD equipment has problems such as the film formation uniformity of the equipment affected by the standing wave effect.

[0006] In order to solve the above technical problems, this application is implemented as follows:

[0007] The embodiment of the present application provides a semiconductor process chamber, comprising: a chamber, a carrier component disposed in the chamber, and a connecting component extending into the chamber and connected to the carrier component;

[0008] The carrier assembly includes a plurality of first carriers and a plurality of second carriers, wherein one of the first carriers and an adjacent second carrier are spaced apart from each other to form a process space, each of the first carriers is provided with a plurality of feeding terminals, and each of the second carriers is provided with a plurality of grounding terminals;

[0009] The connection assembly includes a connection bar, a plurality of elastic components, a plurality of radio frequency connection blocks and a plurality of ground connection blocks, and the connection bar includes a plurality of branch ends connected in parallel;

[0010] The plurality of radio frequency connection blocks are respectively connected to the plurality of branch ends through a portion of the elastic components, and the plurality of ground connection blocks are used to be respectively grounded through another portion of the elastic components;

[0011] The multiple feeding ends of each of the first carriers are respectively connected to the multiple radio frequency connection blocks, and the multiple grounding ends of each of the second carriers are respectively connected to the multiple grounding connection blocks.

[0012] The embodiment of the present application also provides a semiconductor process equipment, including a radio frequency power supply and the above-mentioned semiconductor process chamber;

[0013] The radio frequency power source is connected to the connecting bar.

[0014] In the embodiment of the present application, through multi-point feeding, the electric field distribution on the carrier component can be made into the form of multiple sinusoidal curves. Compared with the electric field distribution in the form of a single sinusoidal curve formed by single-point feeding, the difference between the maximum and minimum values ​​of the electric field on the carrier component can be reduced, so that the electric field distribution on the carrier component can be more uniform, and then the plasma density can be more uniform in the space generated on the wafer surface, thereby improving the uniformity of film formation; the electrical conductivity of the RF feeding path can be improved by elastic components, and the positional relationship between the structures can be adaptively adjusted to improve the fault tolerance of the connection; through the RF connection block and the ground connection block, support and connection of multiple first carriers and multiple second carriers can be achieved, which is beneficial to improve the uniformity of RF transmission and improve the stability of the carrier component. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a structural schematic diagram of a PECVD device in the related art;

[0016] Figure 2 A schematic diagram of electric field distribution of a graphite boat of a single-feed PECVD device in the related art at 60MHz / 13.5MHz;

[0017] Figure 3 A schematic diagram of the structure of a semiconductor process chamber disclosed in an embodiment of the present application;

[0018] Figure 4It is a schematic diagram of the structure of the bearing assembly, the radio frequency connection block, the ground connection block, the elastic component, the support seat and the connection strip disclosed in the embodiment of the present application;

[0019] Figure 5 It is a schematic diagram of the structure of the process boat disclosed in the embodiment of the present application;

[0020] Figure 6 A schematic diagram of the structure of a process boat and a wafer disclosed in an embodiment of the present application;

[0021] Figure 7 A schematic diagram of the structure of a first bearing member disclosed in an embodiment of the present application;

[0022] Figure 8 A schematic diagram of the structure of a second bearing member disclosed in an embodiment of the present application;

[0023] Fig. 9 A schematic diagram of the structure of a radio frequency connection block disclosed in an embodiment of the present application;

[0024] Fig.10 A schematic diagram of the structure of the ground connection block disclosed in the embodiment of the present application;

[0025] Fig.11 A schematic diagram of the structure of the connecting strip and the elastic component disclosed in the embodiment of the present application;

[0026] Fig.12 A schematic diagram of the structure of the connecting strip disclosed in the embodiment of the present application;

[0027] Fig.13 This is a schematic diagram of the structure of the elastic component disclosed in the embodiment of the present application;

[0028] Fig.14 This is a schematic diagram of the structure of the support member disclosed in the embodiment of the present application;

[0029] Fig.15 A schematic diagram of the structure of the bearing assembly and the connecting assembly disclosed in the embodiment of the present application;

[0030] Fig.16 Schematic diagram of the electric field distribution of a process boat of a semiconductor process chamber with multi-point feeding disclosed in an embodiment of the present application at 60 MHz.

[0031] Description of reference numerals:

[0032] 01-graphite boat; 02-feed electrode;

[0033] 100 - cavity; 110 - quartz tube; 120 - first valve plate; 130 - second valve plate;

[0034] 200-carrying assembly; 210-first carrier; 211-feeding end; 220-second carrier; 221-grounding end; 230-first conductive block; 240-second conductive block; 250-first boat angle; 260-second boat angle;

[0035] 300-connection assembly; 310-connection strip; 311-branch end; 320-elastic component; 321-first connection plate; 322-second connection plate; 323-flexible connector; 324-first guide structure; 325-second guide structure; 330-RF connection block; 331-block; 3311-card slot; 332-connector; 340-ground connection block;

[0036] 400 - support member; 410 - first groove; 420 - second groove. DETAILED DESCRIPTION

[0037] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0038] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0039] The embodiments of the present application are described in detail below through specific embodiments and their application scenarios in conjunction with the accompanying drawings.

[0040] Some PECVD equipment in related technologies, such as Figure 1 and Figure 2As shown, a single-point feeding electrode is used, and the size of the graphite boat is 1.5m, and the electrical size of the 13.56MHz RF power supply is 2.2m, so that the size of the graphite boat is smaller than the frequency. In this case, the influence of the standing wave effect on the graphite boat is relatively small; however, when a very high frequency (such as 60MHz, etc.) power supply is used, the electrical size of the very high frequency power supply at this frequency is 0.5m, which is much smaller than the size of the graphite boat. In this case, under the very high frequency power supply, the standing wave effect has a greater impact on the graphite boat, affecting the uniformity of the electric field and causing uneven film production on the wafer surface.

[0041] refer to Figures 3 to 16 The embodiment of the present application discloses a semiconductor process chamber, which includes a chamber 100, a carrier assembly 200 and a connection assembly 300. The carrier assembly 200 is disposed in the chamber 100 and is used to carry a wafer. The connection assembly 300 extends into the chamber 100 and is connected to the carrier assembly 200 to facilitate the transmission of radio frequency power to the carrier assembly 200, thereby realizing the process processing of the wafer carried by the carrier assembly 200.

[0042] The chamber 100 is a basic component that can provide a space for the supporting assembly 200, the wafer, etc., so as to provide process conditions for the wafer to be processed. Figure 3 As shown, the chamber 100 may include a quartz tube 110, a first valve plate 120 and a second valve plate 130. The first valve plate 120 and the second valve plate 130 are respectively arranged at both ends of the quartz tube 110 to play a sealing role to provide a sealed space for process treatment, and at least one of the first valve plate 120 and the second valve plate 130 can be opened and closed to facilitate moving the supporting assembly 200 into or out of the quartz tube 110.

[0043] refer to Figure 5 The carrier assembly 200 includes a plurality of first carriers 210 and a plurality of second carriers 220, wherein the first carriers 210 are used to receive the RF power fed from the connection assembly 300, and the second carriers 220 are used for grounding. In some embodiments, one of the first carriers 210 and the adjacent second carrier 220 are spaced apart from each other, and a process space is formed between the two to facilitate processing of the wafer in the process space. Exemplarily, the carrier assembly 200 may be a graphite boat; accordingly, the first carrier 210 may be a first boat sheet, which is used to connect to the radio frequency so as to feed in the RF energy, and the second carrier 220 may be a second boat sheet, which is used for grounding.

[0044] It should be noted here that the wafer is fixed between the adjacent first carrier 210 and the second carrier 220. In this way, when the first carrier 210 is energized, an electric field can be formed between the first carrier 210 and the second carrier 220, so that plasma can bombard the wafer, thereby realizing process processing of the wafer.

[0045] Exemplarily, a plurality of groups of clamping points are respectively provided on the first carrier 210 and the second carrier 220 , and a wafer can be placed and fixed in an area surrounded by each group of clamping points.

[0046] refer to Figure 7 In some embodiments, each first carrier 210 is provided with a plurality of feeding ends 211, and RF power can be fed into the first carrier 210 through the plurality of feeding ends 211 respectively; accordingly, Figure 8 As shown, each second carrier 220 is provided with a plurality of grounding terminals 221, and the plurality of grounding terminals 221 are respectively used for grounding. This arrangement can facilitate a relatively uniform electric field in a plurality of regions of the first carrier 210, which is conducive to promoting uniform distribution of the electric field.

[0047] Exemplarily, the first carrier 210 can be a long strip structure, and multiple feeding ends 211 can be distributed at one end of the width direction of the first carrier 210 along the length direction of the first carrier 210. For example, under actual working conditions, multiple feeding ends 211 can be distributed at the bottom end of the first carrier 210 and arranged at intervals along the length direction, so that the RF power can be fed into different areas of the first carrier 210 along its own length direction through multiple feeding ends 211, which is beneficial to promote the uniformity of the electric field distribution in the length direction of the first carrier 210.

[0048] In addition, the second carrier 220 can also adopt a long strip structure, and multiple grounding ends 221 can be distributed at one end of the width direction of the second carrier 220 along the length direction of the second carrier 220. For example, under actual working conditions, multiple grounding ends 221 can be distributed at the bottom end of the second carrier 220 and arranged at intervals along the length direction of the second carrier 220.

[0049] In the embodiment of the present application, when assembling the carrier assembly 200, the first carrier 210 and the second carrier 220 can be swapped at 180°. At this time, the setting directions of the multiple feeding terminals 211 and the multiple grounding terminals 221 can be opposite to each other, so as to separate the feeding terminals 211 and the grounding terminals 221 to prevent electrical connection.

[0050] In order to distribute the RF power to the multiple feeding ends 211 of each first carrier 210, the connecting assembly 300 may include a connecting bar 310, such as Fig.11 and Fig.12As shown, the connection bar 310 may include a plurality of branch ends 311 connected in parallel, and the plurality of branch ends 311 may be used to transmit radio frequency power to the plurality of feeding ends 211 of the plurality of first carriers 210 .

[0051] Furthermore, the connection assembly 300 may also include a plurality of RF connection blocks 330, and the plurality of feeding ends 211 of each first carrier 210 are respectively connected to the plurality of RF connection blocks 330. In some embodiments, the plurality of RF connection blocks 330 are arranged at intervals along the length direction of the first carrier 210, and are respectively connected to the plurality of feeding ends 211 of each first carrier 210, so that RF power can be simultaneously fed to the feeding ends 211 at the same area of ​​the plurality of first carriers 210 through each RF connection block 330, and the uniformity of the RF power fed to each first carrier 210 can be promoted by the simultaneous feeding of the plurality of RF connection blocks 330. In addition, the RF connection blocks 330 also play a supporting role for the first carrier 210 to improve the stability of the first carrier 210.

[0052] Exemplarily, the RF connection block 330 can be a long strip block, which extends along the thickness direction of the first carrier 210 and is respectively connected to the feeding ends 211 at the bottom of each of the multiple first carriers 210. Of course, it can also be connected to the feeding ends 211 at other positions, which is not specifically limited here.

[0053] In order to synchronously ground the plurality of second carriers 220, the connection assembly 300 may further include a plurality of ground connection blocks 340, and the plurality of ground terminals 221 of each second carrier 220 are respectively connected to the plurality of ground connection blocks 340. In some embodiments, the plurality of ground connection blocks 340 are arranged at intervals along the length direction of the second carrier 220 (i.e., the same as the length direction of the first carrier 210), and are respectively connected to the plurality of ground terminals 221 of each second carrier 220, so that the RF power outputted from the ground terminals 221 at the same region of the plurality of second carriers 220 can be outputted through each ground connection block 340, and the simultaneous output of the plurality of ground connection blocks 340 can promote the uniformity of the RF power. In addition, the ground connection blocks 340 also support the second carrier 220 to improve the stability of the second carrier 220.

[0054] Exemplarily, the ground connection block 340 can be a long strip block, which extends along the thickness direction of the second carrier 220 and is respectively connected to the grounding terminals 221 at the bottom of each of the multiple second carriers 220. Of course, it can also be connected to the grounding terminals 221 at other positions, which is not specifically limited here.

[0055] Considering that when loading or unloading the wafer, the carrier component 200 needs to be moved out of or into the cavity 100, and in the process of moving the carrier component 200, the carrier component 200 and the connecting component 300 will be separated or combined, which may easily lead to poor contact between the carrier component 200 and the connecting component 300, or cause poor grounding of the carrier component 200, etc., affecting the normal process.

[0056] Based on the above situation, the connection assembly 300 of the embodiment of the present application may further include a plurality of elastic components 320, such as Figure 3 and Figure 4 As shown, these elastic components 320 are respectively connected between the RF connection block 330 and the connection bar 310 , and between the ground connection block 340 and the ground electrode to ensure good electrical conductivity.

[0057] In some embodiments, multiple RF connection blocks 330 are respectively connected to multiple branch ends 311 through a portion of elastic components 320. In this way, through the provision of a portion of elastic components 320, elastic connection between each of the multiple RF connection blocks 330 and the corresponding branch ends 311 can be achieved, so that the positional relationship between the multiple RF connection blocks 330 and the multiple branch ends 311 can be adaptively adjusted during the movement of the supporting component 200, thereby improving the fault tolerance of the connection, ensuring the integrity of the connection, and achieving good conductive performance.

[0058] Similarly, multiple grounding connection blocks 340 are used to be grounded respectively through another part of the elastic component 320. In this way, through the setting of another part of the elastic component 320, an elastic connection between each of the multiple grounding connection blocks 340 and the ground electrode can be achieved, so that the positional relationship between the multiple grounding connection blocks 340 and the ground electrode can be adaptively adjusted during the movement of the supporting component 200, thereby improving the fault tolerance of the connection, ensuring the integrity of the connection, and achieving good conductive performance.

[0059] Based on the above settings, through multi-point feeding, the electric field distribution on the carrier component 200 can be made into the form of multiple sinusoidal curves. Compared with the electric field distribution formed by single-point feeding in the form of a single sinusoidal curve, the difference between the maximum and minimum values ​​of the electric field on the carrier component 200 can be reduced, so that the electric field distribution on the carrier component 200 can be made more uniform, and then the plasma density can be made more uniform in the space generated on the wafer surface, thereby improving the uniformity of film formation. The electrical conductivity of the RF feeding path can be improved by the elastic component 320, and the positional relationship between the structures can be adaptively adjusted to improve the fault tolerance of the connection; through the RF connection block 330 and the ground connection block 340, the support and connection of multiple first carriers 210 and multiple second carriers 220 can be achieved, which is beneficial to improve the uniformity of RF transmission and improve the stability of the carrier component 200.

[0060] refer to Fig. 9 In some embodiments, the RF connection block 330 may include a block 331 and a connector 332, wherein the block 331 is connected to the plurality of first carriers 210 so as to support the plurality of first carriers 210, and RF power may be fed to the plurality of first carriers 210 at the same time. The connector 332 is fixedly connected to the block 331 and connected to the elastic component 320, so that the mechanical connection and electrical connection between the block 331 and the elastic component 320 can be achieved through the connector 332.

[0061] For example, the block 331 may be a long strip structure, which extends along the thickness direction of the first carrier 210, so as to be connected to the plurality of first carriers 210. The connector 332 may be a columnar structure, which may be connected at the middle position of the block 331, so as to make the RF power more evenly distributed to the plurality of first carriers 210 through the block 331.

[0062] Furthermore, the block 331 may be provided with a plurality of slots 3311, and in the thickness direction of the first carrier 210, the respective feed-in ends 211 of the plurality of first carriers 210 are correspondingly snap-fitted to the plurality of slots 3311. Through this arrangement, the firmness and stability of the connection between each first carrier 210 and the block 331 can be ensured, and in addition, through snap-fitting, the efficiency of assembly and disassembly of the first carrier 210 can be improved.

[0063] Exemplarily, the feed-in end 211 may be an L-shaped sheet structure, at least a portion of which is inserted into the card slot 3311 and is limited by the card slot 3311 to ensure the firmness and stability of the assembly and facilitate assembly and disassembly.

[0064] It should be noted that the structure of the ground connection block 340 is substantially the same as that of the RF connection block 330. Fig.10As shown. In addition, considering that the second carrier 220 is located on the outside of the carrier assembly 200 and the first carrier 210 is located on the inside of the carrier assembly 200, in this case, the number of the second carriers 220 is one more than the number of the first carriers 210. Based on this, the number of the slots 3311 provided on the block 331 of the ground connection block 340 is one more than the number of the slots 3311 provided on the block 331 of the RF connection block 330. For example, when the carrier assembly 200 has 9 boat pieces, it includes 4 first carriers 210 and 5 second carriers 220, specifically including the 1st, 3rd, 5th, 7th, and 9th pieces are the second carriers 220, and the 2nd, 4th, 6th, and 8th pieces are the first carriers 210; accordingly, the block 331 of the RF connection block 330 is provided with 4 slots 3311, and the block 331 of the ground connection block 340 is provided with 5 slots 3311. Of course, it can also be in other forms, which are not specifically limited here.

[0065] Fig.15 It is a partial schematic diagram of the bottom of the carrier component 200. The bottom of the carrier component 200 is provided with a connecting component 300. The connecting component 300 may include a plurality of RF connecting blocks 330 and a plurality of grounding connecting blocks 340. The plurality of RF connecting blocks 330 and the plurality of grounding connecting blocks 340 are respectively located at the bottom of the first carrier 210 and the second carrier 220; and each RF connecting block 330 and each grounding connecting block 340 are respectively provided with a plurality of card slots 3311. Since the bottom of the first carrier 210 is provided with a feeding end 211 and the bottom of the second carrier 220 is provided with a grounding end, the feeding end 211 at the corresponding position of each first carrier 210 can be inserted into the corresponding card slot 3311 of the RF connecting block 330, so that the RF energy can be fed into the first carrier 210. Similarly, the grounding end 221 at the corresponding position of each second carrier 220 can be inserted into the corresponding card slot 3311 of the grounding connecting block 340, so that the second carrier 220 can be grounded.

[0066] In addition, the plurality of RF connection blocks 330 may be respectively connected to the plurality of branch ends 311 of the connection bar 310 through the elastic components 320 to facilitate transmission of RF energy.

[0067] refer to Fig.13In some embodiments, the elastic component 320 may include a first connecting plate 321, a second connecting plate 322, and a plurality of flexible connectors 323, wherein the first connecting plate 321 and the second connecting plate 322 are arranged at intervals, and the two may be relatively close or relatively far apart, and the plurality of flexible connectors 323 respectively connect the first connecting plate 321 and the second connecting plate 322. Through such an arrangement, the first connecting plate 321 and the second connecting plate 322 may be relatively moved by the flexible deformation of the flexible connector 323, so as to meet the installation requirements of the bearing assembly 200 and realize adaptive adjustment, which can ensure the reliability of the connection, avoid interference, and effectively alleviate the problem of poor contact caused by irreversible wear caused by hard contact.

[0068] Exemplarily, the flexible connector 323 and the first connecting plate 321 and the second connecting plate 322 may be connected together by welding to ensure that the first connecting plate 321 and the second connecting plate 322 have good electrical contact and can move relative to each other.

[0069] Exemplarily, the flexible connector 323 may be made of a flexible conductive material such as titanium alloy, and may also be in a strip-shaped structure. Of course, it may also be made of other materials or other shapes, which are not specifically limited here.

[0070] The first connecting plate 321 and the connecting body 332 are detachably connected, so that the conductive performance can be achieved and the movement of the bearing assembly 200 is convenient. Exemplarily, the first connecting plate 321 can be provided with a guide hole, and the connecting body 332 can be movably inserted into the guide hole, so that the reliability of the connection can be ensured and the disassembly and assembly can be convenient.

[0071] A second connecting plate 322 of a portion of the elastic component 320 is connected to the branch end 311 to facilitate a flexible connection between the RF connecting block 330 and the connecting strip 310, so that the relative position between the RF connecting block 330 and the connecting strip 310 can be adaptively adjusted, thereby ensuring the reliability of the connection and avoiding interference.

[0072] The second connecting plate 322 of the other part of the elastic component 320 is used for grounding to realize a flexible connection between the ground connection block 340 and the ground electrode, so that the relative position between the ground connection block 340 and the ground electrode can be adaptively adjusted, which not only ensures the reliability of the connection but also avoids interference.

[0073] To ensure that the first connecting plate 321 and the second connecting plate 322 do not move randomly, the elastic component 320 may further include a first guide structure 324 and a second guide structure 325. Fig.13As shown, the first guide structure 324 is provided on the side of the first connecting plate 321 facing the second connecting plate 322, the second guide structure 325 is provided on the side of the second connecting plate 322 facing the first connecting plate 321, and the first guide structure 324 and the second guide structure 325 are slidably matched. Under the cooperation of the first guide structure 324 and the second guide structure 325, the first connecting plate 321 and the second connecting plate 322 can be ensured to move in a direction of being relatively close to or relatively far away from each other, so as to prevent the first connecting plate 321 and the second connecting plate 322 from being misaligned with each other, thereby ensuring the position accuracy between the supporting assembly 200 and the connecting bar 310.

[0074] Exemplarily, one of the first guide structure 324 and the second guide structure 325 may be a guide post, and the other may be a guide sleeve. The sliding fit between the guide post and the guide sleeve can ensure smooth movement between the two and prevent the two from tilting relative to each other.

[0075] In other embodiments, one of the first guide structure 324 and the second guide structure 325 may be a slide, and the other may be a slide rail. The sliding cooperation between the slide and the slide rail can ensure smooth movement between the two and prevent relative tilting of the two.

[0076] refer to Figure 4 and Fig.14 In some embodiments, the semiconductor process chamber may further include a support member 400 disposed in the cavity 100. The support member 400 is disposed opposite to the carrier assembly 200. The support member 400 can support and fix the plurality of elastic components 320 and the connecting strips 310.

[0077] For example, the support member 400 may be disposed in the bottom region of the cavity 100, and the bearing assembly 200 is located above the support member 400. In addition, the support member 400 may be made of ceramic material, which can ensure sufficient strength and corrosion resistance and achieve insulation.

[0078] Furthermore, if Fig.14 As shown, the surface of the support member 400 facing the bearing assembly 200 may be provided with a plurality of first grooves 410, and a plurality of elastic components 320 are respectively arranged in the plurality of first grooves 410. In this way, the first grooves 410 can be used to support the elastic components 320 in the longitudinal direction and to limit the elastic components 320 in the transverse direction to prevent the elastic components 320 from moving at will.

[0079] A second groove 420 may also be provided on the surface of the support member 400 facing the bearing assembly 200, and the connecting strip 310 is arranged in the second groove 420. In this way, the second groove 420 can provide an accommodating space for the connecting strip 310 and can also limit the connecting strip 310 to prevent the connecting strip 310 from moving at will.

[0080] In addition, the second groove 420 is connected to the multiple first grooves 410 respectively, so that the multiple branch ends 311 of the connecting strip 310 can extend into the multiple first grooves 410 respectively, so that the multiple branch ends 311 are respectively connected to the elastic components 320 in each first groove 410, so as to facilitate the feeding of RF power to each first carrier 210 through the multiple elastic components 320 and the multiple RF connection blocks 330.

[0081] In some embodiments, the process space is divided into a plurality of accommodating areas for accommodating wafers along the extension direction of the carrier assembly 200. Specifically, a plurality of clamping points are respectively provided on the first carrier 210 and the second carrier 220 corresponding to each accommodating area, and the wafer is fixed in the accommodating area through the plurality of clamping points, so as to facilitate the process processing of the wafer. Through the plurality of accommodating areas, it is possible to process a plurality of wafers at one time, so as to improve the process efficiency.

[0082] Furthermore, a plurality of feed-in terminals 211 are arranged at intervals along the extension direction of the carrier assembly 200, and in the extension direction, each feed-in terminal 211 is located at the center of the corresponding accommodation area. Based on this arrangement, RF power can be fed to the center of the corresponding accommodation area through the feed-in terminal 211, so that RF power can be fed to the center of each wafer to improve the uniformity of the electric field distribution. It should be noted here that when the wafer is fixed in the corresponding accommodation area, the center of the wafer coincides with the center of the accommodation area.

[0083] In each first carrier 210, the distance between two adjacent feeding ends 211 is smaller than the electrical dimension of the RF power source connected to the connecting bar 310. It should be noted that the electrical dimension may be one tenth of the wavelength of the electromagnetic wave, such as 13.56 MHz wavelength is 22 m, the electrical dimension is 2.2 m, 60 MHz wavelength is 5 m, the electrical dimension is 0.5 m, and so on.

[0084] For example, taking a wafer with a size of 20 cm (for example, a round wafer with a diameter of 20 cm, or a square wafer with a side length of 20 cm, etc.) and a 1.5 m long carrier component 200 as an example, the distance between two adjacent feeding ends 211 is made less than the electrical dimension of 60 MHz (i.e., 50 cm). In this case, the distribution of the electric field on the carrier component 200 can form multiple sinusoidal waves of the same size, and the difference between the maximum and minimum values ​​is less than 5%, thereby ensuring the uniformity of the electric field distribution.

[0085] Under the condition of preset frequency (such as 60MHz, etc.), the electric field distribution of the carrier component 200 forms multiple sine waves of the same size. At this time, the phases on multiple feed-in terminals 211 need to be the same, that is, the transmission paths of the RF power corresponding to the feed-in terminals 211 at different positions need to be equal. Based on this situation, the connecting bar 310 in the embodiment of the present application is used to connect to the RF power supply, and the distances from the multiple branch terminals 311 of the connecting bar 310 to the RF power supply are equal. In this way, the phases on each feed-in terminal 211 can be guaranteed to be the same, thereby improving the uniformity of the electric field distribution on the entire carrier component 200.

[0086] Taking the first carrier 210 with 6 feeding ends 211 as an example, in order to make the distances from multiple branch ends 311 to the RF power source equal, in the embodiment of the present application, the connecting strip 310 is divided into two equal lengths, the separated connecting strip 310 is further divided into two, and the separated connecting strip 310 is further divided into three, so that 6 branch ends 311 are formed, and the lengths of the connecting strip 310 branches from each branch end 311 to the RF power source are equal, so that the RF transmission distance of each feeding end 211 can be equal. Through this setting, the connecting strip 310 can be divided into multiple parallel branch strips, such as Fig.12 As shown, the RF transmission distance on each branch strip is equal to ensure that the phases of the multiple feeding ends 211 are the same, thereby improving the uniformity of the electric field distribution on the entire carrier assembly 200. Of course, the first carrier 210 can also be provided with other numbers of feeding ends 211, and the principle remains unchanged. As long as the distances from the multiple branch ends 311 to the RF power source are equal, the phases of the multiple feeding ends 211 can be ensured to be the same, and the specific method is not limited.

[0087] It should be noted here that, in the embodiment of the present application, the number of feed-in terminals 211 of each first carrier 210 can be changed according to the different RF powers, and the distance between two adjacent feed-in terminals 211 can be less than 1 / 10 of the RF wavelength, that is, less than the electrical size. In this way, when the RF wavelength is less than 1 / 10, the number of feed-in terminals 211 can be increased. For example, in the case of 60MHz, each first carrier 210 can be provided with 6 feed-in terminals 211, and can also be increased to 7, 8, 9, 10, etc.; or, the frequency is changed to 40MHz, in which case 4 feed-in terminals 211 can be used. In addition, when the length of the carrier assembly 200 increases, for example, from 1.5m to 1.75m, the number of feed-in terminals 211 can also be increased accordingly, such as, from 6 feed-in terminals 211 for the first carrier 210 of 1.5m, to 7 feed-in terminals 211 for the first carrier 210 of 1.75m, etc.

[0088] refer to Figure 5 In some embodiments, the bearing assembly 200 may further include a first conductive block 230, a second conductive block 240, a first boat angle 250, and a second boat angle 260. The two ends of the extension direction of each of the plurality of first bearing members 210 are connected by the first conductive block 230, so that the first conductive blocks 230 at both ends can fix the plurality of first bearing members 210 and play a certain conductive role, thereby ensuring the stability of the plurality of first bearing members 210 and realizing energy transmission; in addition, the first conductive block 230 can also be used for robot grasping to facilitate the movement of the bearing assembly 200. Exemplarily, the first conductive block 230 may be provided with a plurality of first fixing grooves, and correspondingly, the first fixing protrusions are provided at the two ends of the first bearing member 210, and the first fixing protrusions are inserted into the first fixing grooves to realize installation.

[0089] In addition, the two ends of the respective extension directions of the plurality of second carriers 220 are connected by the second conductive blocks 240, so that the second conductive blocks 240 at the two ends can fix the plurality of second carriers 220 and play a certain conductive role, thereby ensuring the stability of the plurality of second carriers 220 and realizing energy transmission. Exemplarily, the second conductive blocks 240 can be provided with a plurality of second fixing grooves, and correspondingly, the two ends of the first carrier 210 are respectively provided with second fixing protrusions, and the second fixing protrusions are inserted into the second fixing grooves for installation.

[0090] The first boat corner 250 and the second boat corner 260 are respectively connected to the second conductive blocks 240 at both ends. Based on this, the first boat corner 250 and the second boat corner 260 can support the entire bearing assembly 200 to ensure the stability of the bearing assembly 200 in the cavity 100, and the first boat corner 250 and the second boat corner 260 can also play a role in isolating the boat sheet. Exemplarily, the first boat corner 250 and the second boat corner 260 are both made of ceramic material to play an insulating role.

[0091] In the embodiment of the present application, one end of the connecting strip 310 is connected to the RF power supply, and the other end of the connecting strip 310 extends into the cavity 100 and is divided into a plurality of branch strips, each branch strip corresponds to a branch end 311, each branch end 311 is connected to an elastic component 320, each elastic component 320 is connected to a connector 332 of a RF connection block 330, and a block body 331 of each RF connection block 330 connects and fixes the RF ends of a plurality of first carriers 210 at the same area. At the same time, a block body 331 of each grounding connection block 340 connects and fixes the grounding ends 221 of a plurality of second carriers 220 at the same area, and the second carriers 220 are arranged alternately with the first carriers 210 and are grounded through the grounding connection block 340. Based on this, the RF power output by the RF power supply can be introduced into the multiple first carriers 210 respectively through the connecting strips 310, multiple elastic components 320, and multiple RF connecting blocks 330, and an electric field is formed between the first carrier 210 and the adjacent second carrier 220. Under the action of the electric field, plasma can bombard the wafer to achieve process processing of the wafer.

[0092] Based on the above semiconductor process chamber, the embodiment of the present application further discloses a semiconductor process equipment, the disclosed semiconductor process equipment includes a radio frequency power supply and the above semiconductor process chamber, wherein the radio frequency power supply is connected to the connecting bar 310, so as to feed radio frequency power to the connecting bar 310, and finally make the radio frequency power reach the wafer carried by the carrying component 200. In addition, the semiconductor process equipment may also include other components, which may be specifically referred to in the relevant technology, and will not be specifically described here.

[0093] In summary, the embodiment of the present application can improve the uniformity of the electric field on the carrier component 200 by changing the structure of the carrier component 200. For example, the relative difference between the maximum and minimum values ​​of the electric field on the carrier component 200 can be reduced to within 5% to meet the uniformity requirements of the process. In addition, the semiconductor process chamber in the embodiment of the present application can also apply very high frequency (such as 60 MHz, etc.) to facilitate the formation of microcrystalline thin films.

[0094] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A semiconductor process chamber, characterized in that: include: A cavity (100), a bearing assembly (200) disposed in the cavity (100), and a connecting assembly (300) extending into the cavity (100) and connected to the bearing assembly (200); The carrier assembly (200) comprises a plurality of first carriers (210) and a plurality of second carriers (220), wherein one of the first carriers (210) and an adjacent second carrier (220) are spaced apart from each other to form a process space, each of the first carriers (210) is provided with a plurality of feed-in terminals (211), and each of the second carriers (220) is provided with a plurality of ground terminals (221); The connection assembly (300) comprises a connection bar (310), a plurality of elastic components (320), a plurality of radio frequency connection blocks (330) and a plurality of ground connection blocks (340); the connection bar (310) comprises a plurality of branch ends (311) connected in parallel; The plurality of radio frequency connection blocks (330) are respectively connected to the plurality of branch ends (311) through a portion of the elastic components (320), and the plurality of ground connection blocks (340) are used to be respectively grounded through another portion of the elastic components (320); The multiple feeding ends (211) of each of the first carriers (210) are respectively connected to the multiple radio frequency connection blocks (330), and the multiple grounding ends (221) of each of the second carriers (220) are respectively connected to the multiple grounding connection blocks (340).

2. The semiconductor process chamber according to claim 1, characterized in that: The radio frequency connection block (330) and the ground connection block (340) both include a block body (331) and a connection body (332); The block (331) is provided with a plurality of slots (3311), and in the thickness direction of the boat sheet, the respective feeding ends (211) of the plurality of first bearing members (210) or the respective grounding ends (221) of the plurality of second bearing members (220) are correspondingly snapped into the plurality of slots (3311); The connecting body (332) is fixedly connected to the block body (331) and is also connected to the elastic component (320).

3. The semiconductor process chamber according to claim 2, characterized in that: The elastic component (320) comprises a first connecting plate (321), a second connecting plate (322) and a plurality of flexible connecting members (323); The first connecting plate (321) and the second connecting plate (322) are spaced apart and can be relatively close to or relatively far from each other, and the plurality of flexible connecting members (323) respectively connect the first connecting plate (321) and the second connecting plate (322); The first connecting plate (321) is detachably connected to the connecting body (332), and the second connecting plate (322) is connected to the branch end (311), or the second connecting plate (322) is used for grounding.

4. The semiconductor process chamber according to claim 3, characterized in that: The elastic component (320) further includes a first guide structure (324) and a second guide structure (325); The first guide structure (324) is arranged on a side of the first connecting plate (321) facing the second connecting plate (322), and the second guide structure (325) is arranged on a side of the second connecting plate (322) facing the first connecting plate (321), and the first guide structure (324) and the second guide structure (325) are slidably matched.

5. The semiconductor process chamber according to claim 1, wherein: The semiconductor process chamber further comprises a support member (400) disposed in the cavity (100), wherein the support member (400) is disposed opposite to the supporting assembly (200); A surface of the support member (400) facing the bearing assembly (200) is provided with a plurality of first grooves (410) and a second groove (420), and the second grooves (420) are respectively connected to the plurality of first grooves (410); The plurality of elastic components (320) are respectively disposed in the plurality of first grooves (410), and the connecting strip (310) is disposed in the second groove (420).

6. The semiconductor process chamber according to claim 1, wherein: Along the extension direction of the carrying component (200), the process space is divided into a plurality of accommodating areas for accommodating wafers; A plurality of the feeding ends (211) are distributed at intervals along the extension direction, and in the extension direction, each of the feeding ends (211) is located at a central position of a corresponding accommodating area.

7. The semiconductor process chamber according to claim 1, wherein: The distance between two adjacent feeding ends (211) in each of the first carriers (210) is smaller than the electrical dimensions of a radio frequency power source connected to the connecting bar (310).

8. The semiconductor process chamber according to claim 1, wherein: The distances between the plurality of branch ends (311) of the connecting bar (310) and a radio frequency power source for connecting to the connecting bar (310) are equal.

9. The semiconductor process chamber according to claim 1, wherein: The bearing assembly (200) further comprises a first conductive block (230), a second conductive block (240), a first boat angle (250) and a second boat angle (260); Two ends of each of the plurality of first bearing members (210) in the extension direction are connected via the first conductive blocks (230); Two ends of each of the plurality of second carriers (220) in the extension direction are connected via the second conductive blocks (240); The first boat corner (250) and the second boat corner (260) are respectively connected to the second conductive block (240) at two ends.

10. A semiconductor process equipment, characterized in that: A semiconductor process chamber comprising a radio frequency power supply and any one of claims 1 to 9; The radio frequency power source is connected to the connecting bar (310).

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