A method and apparatus for pre-treating silicon crystals for diamond deposition

Abstract

The present application belongs to the technical field of silicon crystal coating diamond, and particularly relates to a silicon crystal pretreatment method and device for diamond deposition, which comprises the following steps: step S10: washing the dust on the surface of the silicon crystal with pure water; step S20: soaking the silicon crystal in hydrofluoric acid and then rinsing the acid away with a large amount of pure water; step S30: drying the surface of the silicon crystal substrate; step S40: dropping DMSO on the surface of the silicon crystal at 40-50 degrees, and keeping still for more than 1 hour; step S50: rinsing the silicon crystal with pure water again; and step S60: placing the silicon crystal on a centrifuge, spinning at a medium or low speed, and spinning dry, thus completing the pretreatment. The present method corrodes the oxide film on the surface of the silicon by means of hydrofluoric acid soaking, so that the silicon surface is easier to nucleate. Meanwhile, the hydrofluoric acid modifies the silicon surface by means of pitting, so that water is easy to stay on the surface of the silicon crystal, and the silicon crystal is easy to clean.

Description

Technical Field

[0001] This invention belongs to the field of silicon crystal coated diamond technology, specifically relating to a silicon crystal pretreatment method and apparatus for diamond deposition. Background Technology

[0002] Semiconductor coating technology is one of the core technologies in the modern microelectronics and optoelectronics industries. It involves depositing one or more thin films on the surface of semiconductor materials to achieve specific physical, chemical, or electrical functions. Diamond has extremely high thermal conductivity, far exceeding that of silicon. Coating silicon with diamond can significantly improve the overall thermal conductivity of the material, which is crucial for the thermal management of high-performance electronic devices, especially integrated circuits and microprocessors that generate a lot of heat. Therefore, pretreatment of the silicon crystal before coating is particularly important.

[0003] Currently, the existing method for preparing silicon carbide crystals according to CN113113290A includes: (1) selecting at least one substrate and performing polishing and cleaning treatment on the at least one substrate; (2) under a first condition, performing in-situ etching treatment on the at least one substrate by introducing hydrogen gas; (3) under a second condition, performing carbonization treatment on the at least one substrate by introducing propane and hydrogen gas; (4) under a third condition, introducing silane, propane and hydrogen gas, and growing silicon carbide crystals on the at least one substrate by vapor deposition to obtain at least one combined crystal including the substrate and the silicon carbide crystal; (5) placing the combined crystal in an environment with a temperature of 500 to 1200°C for at least 1 hour to cool down; (6) placing the combined crystal in a room temperature environment to cool down; (7) heating the combined crystal to 50 to 100°C and using an etching solution to perform ultrasonic cleaning on the combined crystal at 50 to 100°C for a first time to obtain a silicon carbide crystal with a basal dislocation density of 120-2000 cm-2.

[0004] However, there are also two problems: 1. When cleaning silicon crystals using this method, water does not easily stay on the silicon crystals, making it easy to not clean them thoroughly. 2. An oxide film will form on the surface of the silicon crystals, affecting the nucleation efficiency. Summary of the Invention

[0005] This solution provides a silicon crystal pretreatment method for diamond deposition to address the problem of incomplete cleaning.

[0006] This solution provides a silicon pretreatment method for diamond deposition, comprising the following steps:

[0007] Step S10: Wash away the dust on the silicon crystal surface with pure water;

[0008] Step S20: Immerse the silicon crystal in hydrofluoric acid, and then rinse off the hydrofluoric acid with pure water;

[0009] Step S30: Dry the silicon crystal surface;

[0010] Step S40: Drop DMSO onto the silicon crystal surface at 40-50 degrees Celsius and let it stand for more than 1 hour;

[0011] Step S50: Rinse the silicon crystal again with pure water;

[0012] Step S60: Place the silicon crystal on a centrifuge, spin dry to complete the pretreatment.

[0013] The beneficial effects of this method are as follows: This method etches the oxide film on the silicon surface by immersion in hydrofluoric acid, making the silicon surface more prone to nucleation. Simultaneously, the hydrofluoric acid performs pitting etching on the silicon surface, making it easier for moisture to remain on the silicon crystal surface and thus easier to clean.

[0014] Furthermore, the immersion time of hydrofluoric acid in step S20 is 100-130 seconds. This time provides the best effect of hydrofluoric acid; too short a time will result in the oxide film not being removed, while too long a time will result in excessive damage to the silicon crystal surface.

[0015] Furthermore, the process includes step S25: ultrasonically cleaning the silicon crystal in a methanol container, followed by ultrasonic cleaning in a pure water container. Ultrasonic cleaning with methanol and pure water effectively removes residual hydrofluoric acid from the silicon crystal surface.

[0016] Furthermore, in step S40, during the dripping process, the silicon crystal is rotated at a set speed. During dripping, the rotation of the silicon crystal allows the nucleating agent to disperse due to centrifugal force, resulting in a more uniform distribution of the nucleating agent.

[0017] Since existing pretreatment is all done manually, and hydrofluoric acid is highly corrosive and volatile, manual handling can easily cause injury to personnel.

[0018] This solution also provides a silicon crystal pretreatment device for diamond deposition, comprising: a sealed chamber: the sealed chamber is provided with an air inlet pipe, an air outlet pipe, a cleaning chamber, a hydrofluoric acid chamber, a methanol chamber, and a pure water chamber; the cleaning chamber is provided with a nozzle, and the methanol chamber and the pure water chamber are each provided with a vibrator; a ball screw: the ball screw cooperates with the sealed chamber; a moving part: the moving part is slidably connected to the ball screw; a main motor: the shaft of the main motor is fixedly connected to the ball screw, and the main motor is fixedly connected to the chamber; and a telescopic mechanism: the telescopic mechanism... Fixedly connected to the moving part; clamping mechanism: used to clamp the silicon crystal, the clamping mechanism cooperates with the telescopic mechanism; air pump: the air pump is connected to the air inlet pipe; water pump: the water pump is connected to the nozzle; dripping mechanism: the dripping mechanism is used to drip the silicon crystal, the dripping mechanism is located inside the sealed box; heating mechanism: the heating mechanism is used to maintain the temperature inside the box, the heating mechanism is located inside the sealed box; controller: the main motor, dripping mechanism, heating mechanism, water pump, air pump, vibrator and telescopic mechanism are all electrically connected to the controller.

[0019] The principle of this solution is as follows: The operator fixes the silicon crystal onto the clamping mechanism, closes the chamber, and then the controller starts the main motor. The main motor rotates the ball screw, causing the moving part to move. The moving part drives the telescopic mechanism, which in turn moves the clamping mechanism, moving it above the cleaning chamber. Then, the controller starts the telescopic mechanism, causing the clamping mechanism to move downwards until the silicon crystal is inside the cleaning chamber. The controller then starts the water pump, causing the nozzles to spray water to remove dust from the silicon crystal. Next, the controller controls the main motor and telescopic mechanism to allow the silicon crystal to enter the hydrofluoric acid chamber for immersion. After immersion, the controller again moves the main motor and telescopic mechanism to the cleaning chamber for a second rinse. Afterward, the controller moves the silicon crystal sequentially to the methanol chamber and the pure water chamber. The controller then starts the vibrator for ultrasonic cleaning. After cleaning, the controller starts the heating wire, and the air pump introduces nitrogen through the air inlet pipe for drying. After drying, the heating wire temperature is maintained at the set temperature, and the clamping mechanism places the silicon crystal onto the dripping mechanism for dripping. After standing for one hour, the pretreatment is complete.

[0020] The beneficial effects of this solution are: it automates the pretreatment process, reduces the risk of personnel coming into contact with hydrofluoric acid, and improves efficiency.

[0021] Furthermore, it also includes a first contact sensor, a second contact sensor, and an electrically operated flip cover. The electrically operated flip cover is used to open and close the hydrofluoric acid chamber. The first contact sensor is electrically connected to the water pump and is located inside the cleaning chamber. Both the first and second contact sensors cooperate with the clamping mechanism. The second contact sensor is electrically connected to the electrically operated flip cover and is located inside the cleaning chamber. The electrically operated flip cover is rotatably connected to the hydrofluoric acid chamber.

[0022] When the controller moves the clamping mechanism into the cleaning chamber, the first contact sensor contacts the clamping element, triggering the water pump to spray water for cleaning. When the controller moves the clamping mechanism into the hydrofluoric acid chamber, the clamping mechanism touches the second contact sensor, which then controls the electrically operated flip cover to open, allowing the silicon crystal to be immersed in hydrofluoric acid. When the controller moves the clamping mechanism out of the hydrofluoric acid chamber, the second contact sensor is triggered, and the electrically operated flip cover automatically closes. Because hydrofluoric acid is volatile, to prevent corrosion of other instruments, this design only opens the cover when the silicon crystal is immersed in hydrofluoric acid, keeping it closed at other times, thus improving the lifespan of the instruments.

[0023] Furthermore, the cleaning chamber is connected to the hydrofluoric acid chamber, and the two chambers are vertically aligned. The cleaning chamber is located above the hydrofluoric acid chamber and has a drain outlet that cooperates with the electrically operated flip cover. Since the silicon crystal carries some hydrofluoric acid with it when it exits, which can easily corrode other equipment, this mechanism activates a first contact sensor when the clamping mechanism enters the cleaning chamber, causing the nozzle to spray water for dust removal. As the clamping mechanism continues to move downwards, it passes the first contact sensor, the nozzle stops spraying water, and wastewater slides from the electrically operated flip cover to the drain outlet. Then, as the clamping mechanism continues to move downwards, it contacts a second contact sensor, causing the electrically operated flip cover to open. The clamping mechanism, carrying the silicon crystal, enters the hydrofluoric acid chamber for immersion. After immersion, the clamping mechanism rises, triggering the second contact sensor and closing the electrically operated flip cover. The clamping mechanism then rises again, triggering the first contact sensor and causing the nozzle to spray water, thus washing away the hydrofluoric acid on the silicon crystal and preventing it from entering the sealed chamber. Meanwhile, the cleaning chamber and the hydrofluoric acid chamber are arranged vertically, and the cleaning chamber is located above the hydrofluoric acid chamber, which prevents hydrofluoric acid from entering the sealed box.

[0024] Furthermore, it also includes gears and racks. The clamping mechanism includes a clamping member and a connecting rod. The clamping member is used to clamp the silicon crystal. One end of the connecting rod is rotatably connected to the clamping member, and the other end is fixedly connected to the telescopic mechanism. The gear is fixedly connected to the clamping member, and the rack is fixedly connected to the cleaning chamber. The gear and rack cooperate with each other. Since the silicon crystal needs to be kept horizontal during dripping, the clamping mechanism usually clamps the silicon crystal horizontally. However, when rinsing with pure water, the horizontal state of the silicon crystal makes it easy for water to adhere to the surface of the silicon crystal, forming watermarks. In this mechanism, when the clamping mechanism enters the cleaning chamber, the gear will mesh with the rack inside the cleaning chamber, causing the gear to rotate. The rotation of the gear drives the clamping member to rotate, and the clamping member drives the silicon crystal to rotate. After reaching the set position, it rotates exactly 90 degrees, making the silicon crystal vertical. In this way, when the nozzle sprays water, water will not remain on the surface of the silicon crystal.

[0025] Furthermore, the clamping mechanism includes a float, a nitrogen pipe, a pressure sensor, a spring, and a clamping member. The telescopic mechanism has a groove. One end of the spring is fixedly connected to the telescopic rod of the telescopic mechanism, and the other end is fixedly connected to the float. The clamping member is fixedly connected to the float. The nitrogen pipe is fixedly connected to the telescopic mechanism and is connected to a gas pump. Multiple nitrogen pipes are provided and arranged in a circumferential array around the telescopic mechanism. The pressure sensor is disposed in the groove and cooperates with the float. The pressure sensor is electrically connected to the controller.

[0026] When the clamping mechanism, carrying the silicon crystal, is immersed in hydrofluoric acid, and the electrically operated flip-top is open, there is still a possibility that the hydrofluoric acid will evaporate. This mechanism, however, prevents hydrofluoric acid from evaporating even when the clamping mechanism, carrying the silicon crystal, is in place. Simultaneously, a nitrogen gas pipe enters the hydrofluoric acid chamber. The float rises due to buoyancy, but the silicon crystal remains immersed in the hydrofluoric acid, causing the float to move upwards. This upward movement presses against a pressure sensor, triggering the controller to activate a gas pump that introduces nitrogen gas into the nitrogen pipe. The nitrogen pipe continuously sprays nitrogen gas, creating a nitrogen layer in the upper part of the hydrofluoric acid chamber, preventing the hydrofluoric acid from evaporating. This mechanism solves the problem of preventing hydrofluoric acid evaporation even when the electrically operated flip-top is open.

[0027] Furthermore, it also includes a timer, which is electrically connected to the controller and the pressure sensor. In this design, the ethanol chamber and the pure water chamber do not require gas seals. Therefore, when the device is in the ethanol chamber or the pure water chamber, the float will move up and down due to the vibrator, sometimes pressing the pressure sensor and sometimes not. When the float triggers the pressure sensor, the pressure sensor energizes the timer, and the timer starts counting. If the time has not been reached, the pressure sensor disconnects, and the timer restarts, without triggering the gas pump to inject nitrogen. If the set time is reached, the timer sends an electrical signal to the controller, which then starts the gas pump, causing the nitrogen pipe to spray nitrogen. This design saves energy. Attached Figure Description

[0028] Figure 1 This is a structural diagram of a silicon crystal pretreatment device for diamond deposition;

[0029] Figure 2 This is a state diagram of the cleaning chamber during cleaning in a silicon crystal pretreatment device for diamond deposition.

[0030] Figure 3 This is a diagram showing the state of a silicon crystal pretreatment device for diamond deposition entering the hydrofluoric acid chamber.

[0031] The reference numerals in the accompanying drawings include: 1. Sealed chamber; 2. Air pump; 3. Ball screw; 4. Moving part; 5. First contact sensor; 6. Nozzle; 7. Electric flip cover; 8. Drain outlet; 9. Rack; 10. Vibrator; 11. Methanol chamber; 12. Pure water chamber; 13. Rotary motor; 14. Air inlet pipe; 15. Sponge; 16. Air outlet pipe; 17. Gear; 18. Clamping part; 19. Float; 20. Groove; 21. Telescopic mechanism; 22. Nitrogen pipe; 23. Spring; 24. Silicon crystal; 25. Dropper; 26. Turntable; 27. Second contact sensor. Detailed Implementation

[0032] This solution provides a diamond sheet pretreatment method, including the following steps: Step S10: Wash away the dust on the surface of silicon crystal 24 with pure water;

[0033] Step S20: Immerse silicon crystal 24 in hydrofluoric acid for 100-130 seconds. This immersion time yields the best results; too short a time will result in incomplete removal of the oxide film, while too long a time will cause excessive damage to the surface of silicon crystal 24. Then rinse off the acid with plenty of pure water.

[0034] Step S25: Place silicon crystal 24 in a methanol container for ultrasonic cleaning, and then place it in a pure water container for ultrasonic cleaning. Ultrasonic cleaning with methanol and pure water effectively removes residual hydrofluoric acid from the surface of silicon crystal 24.

[0035] Step S30: Dry the surface of silicon crystal 24;

[0036] Step S40: Apply DMSO to the surface of silicon crystal 24 at 40-50 degrees Celsius and allow it to stand for at least 1 hour. During the dripping process, rotate silicon crystal 24 at a speed of 500-1000 RPM. The rotation of silicon crystal 24 during dripping allows the nucleating agent to disperse due to centrifugal force, resulting in a more uniform distribution of the nucleating agent.

[0037] Step S50: Rinse the silicon crystal 24 again with pure water;

[0038] Step S60: Place silicon crystal 24 on a centrifuge, adjust the speed to 600 RPM, spin dry to complete the pretreatment.

[0039] Step S70: Finally, place the diamond in the oven for growth. Adjust the temperature, gas, power density, etc. according to requirements. The time is generally 15-35 days. After the diamond growth is completed, turn off the equipment.

[0040] The beneficial effects of this method are as follows: This method uses hydrofluoric acid immersion to corrode the oxide film on the silicon surface, making it easier for nucleation to occur on the silicon surface. Simultaneously, the hydrofluoric acid performs pitting modification on the silicon surface, making it easier for moisture to remain on the silicon crystal 24 surface, thus making the silicon crystal 24 easier to clean.

[0041] The basics are as follows: Figure 1 As shown:

[0042] Since existing pretreatment is all done manually, and hydrofluoric acid is highly corrosive and volatile, manual handling can easily cause injury to personnel.

[0043] This solution also provides a silicon crystal pretreatment device for diamond deposition, comprising: a sealed box 1, a main motor, a water pump, an air pump 2, a ball screw 3, a moving part 4, a first contact sensor 5, an electric flip cover 7, a rack 9, a rotating motor 13, a sponge 15, a gear 17, a clamping mechanism, a telescopic mechanism 21, a nitrogen pipe 22, a spring 23, a silicon crystal 24, a dripping pipe 25, a turntable 26, and a second contact sensor 27.

[0044] The clamping mechanism includes a float 19, a nitrogen pipe 22, a pressure sensor, a spring 23, and a clamping member 18. The telescopic mechanism 21 has a groove 20. One end of the spring 23 is fixedly connected to the telescopic rod of the telescopic mechanism 21, and the other end is fixedly connected to the float 19. The clamping member 18 is fixedly connected to the float 19. The nitrogen pipe 22 is connected to the air pump 2. The pressure sensor is located in the groove 20. When the float 19 rises due to liquid buoyancy, it will touch the pressure sensor. When only subjected to gravity, the float 19 will not touch the pressure sensor. The pressure sensor is electrically connected to the controller. The pressure sensor is a capacitive touch switch. In this design, the ethanol chamber and the pure water chamber 12 do not require a gas seal. Therefore, when the device is in the ethanol chamber or the pure water chamber 12, due to the vibrator 10, the float 19 will move up and down, pressing the capacitive touch switch intermittently. Since the capacitive touch switch requires a set touch time to trigger, it will not trigger in the ethanol chamber or the pure water chamber 12. This organization has saved energy.

[0045] The sealed chamber 1 is equipped with an air inlet pipe 14, an air outlet pipe 16, a cleaning chamber, a hydrofluoric acid chamber, a methanol chamber 11, and a pure water chamber 12. The cleaning chamber is equipped with a nozzle 6, and the methanol chamber 11 and the pure water chamber 12 are equipped with vibrators 10. The cleaning chamber and the hydrofluoric acid chamber are arranged vertically and connected, with the cleaning chamber located above and the hydrofluoric acid chamber located below. The cleaning chamber is equipped with a drain outlet 8, which is located above the electrically operated flip cover 7. The electrically operated flip cover 7 is a ramp type, and it will not touch the silicon crystal 24 when it rotates. When the electrically operated flip cover 7 is in the closed state, the wastewater will flow down the ramp to the drain outlet 8. The methanol chamber 11 and the pure water chamber 12 are fixed side by side at the bottom of the sealed chamber 1. The electrically operated flip cover 7 is used to open and close the hydrofluoric acid chamber. The first contact sensor 5 is electrically connected to the water pump and is located inside the cleaning chamber. When the clamping member 18 moves downward, it can touch the first contact sensor 5 and the second contact sensor 27. The second contact sensor 27 is electrically connected to the electrically operated flip cover 7 and is located inside the cleaning chamber. The electrically operated flip cover 7 is rotatably connected to the hydrofluoric acid chamber. The gear 17 is fixedly connected to the clamping member 18, and the rack 9 is fixedly connected to the cleaning chamber. The gear 17 meshes with the rack 9. The air inlet pipe 14, the air outlet pipe 16, the drain outlet 8, and the nitrogen pipe 22 are all equipped with one-way valves. The air outlet pipe 16 is equipped with a sponge 15 to absorb moisture.

[0046] The ball screw 3 is rotatably connected to the sealed housing 1; the moving part 4 is slidably connected to the ball screw 3; the shaft of the main motor is fixedly connected to the ball screw 3; the telescopic mechanism 21 is fixedly connected to the moving part 4; the air pump 2 is connected to the air inlet pipe 14, and the water pump is connected to the nozzle 6. Both the air pump 2 and the water pump are fixed outside the sealed housing 1. The heating wire is fixedly connected to the sealed housing 1; the controller is electrically connected to the main motor, the dripping mechanism, the heating wire, the water pump, the air pump 2, the vibrator 10, and the telescopic mechanism 21.

[0047] The dripping mechanism is located inside the sealed chamber 1. The mechanism includes a turntable 26, a rotating motor 13, and a dripping tube 25. The dripping tube 25 is connected to the sealed chamber 1. The rotating motor 13 is fixedly connected to the sealed chamber 1, and its shaft is fixedly connected to the turntable 26. The rotating motor 13 is an adjustable-speed motor. The dripping tube 25 is located above the center of the turntable 26. A separate nozzle 6 is also located next to the turntable 26 and is connected to a water pump.

[0048] As attached Figure 1 , Figure 2 , Figure 3 As shown:

[0049] The principle of this solution is as follows: The operator fixes the silicon crystal 24 onto the clamping mechanism, closes the housing, and then the controller controls the main motor to start. The main motor causes the ball screw to rotate, thereby causing the moving part 4 to move. The moving part 4 drives the telescopic mechanism 21 to move, and the telescopic mechanism 21 drives the clamping mechanism to move, so that the clamping mechanism moves above the cleaning chamber. Then the controller controls the telescopic mechanism 21 to start, causing the clamping mechanism to move down. The gear 17 will mesh with the rack 9 inside the cleaning chamber, causing the gear 17 to rotate. The rotation of the gear 17 drives the clamping part 18 to rotate, and the clamping part 18 drives the silicon crystal 24 to rotate. After reaching the set position, it rotates exactly 90 degrees, making the silicon crystal 24 vertical. At the same time, the first contact sensor 5 will contact the clamping part 18. At this time, the controller controls the water pump to spray water, so that the nozzle 6 sprays water for dust removal.

[0050] As the clamping member 18 continues to move downwards, the clamping mechanism passes the first contact sensor 5, the nozzle 6 stops spraying water, and the wastewater slides from the electric flip cover 7 to the drain outlet 8 for discharge. Then, the clamping mechanism continues to move downwards and contacts the second contact sensor 27, causing the electric flip cover 7 to open. The clamping mechanism carries the silicon crystal 24 into the hydrofluoric acid for immersion. During immersion, the float 19 will rise due to the buoyancy of the liquid, but the silicon crystal 24 is still immersed in the hydrofluoric acid, causing the float 19 to move upwards. The upward movement of the float 19 will squeeze the capacitive touch switch. The capacitive touch switch will be triggered after continuous contact for 10 seconds. The controller controls the air pump 2 to introduce nitrogen into the nitrogen pipe 22. The nitrogen pipe 22 sprays out nitrogen continuously, forming a nitrogen layer above the hydrofluoric acid. Even if the hydrofluoric acid evaporates, it cannot escape.

[0051] After soaking, the clamping mechanism rises, triggering the second contact sensor 27, closing the electrically operated flip cover 7. The clamping mechanism continues to rise, triggering the first contact sensor 5, and the nozzle 6 sprays water to wash away the hydrofluoric acid on the silicon crystal 24, preventing hydrofluoric acid from entering the sealed chamber 1. When the clamping member 18 reaches the top of the cleaning chamber, the capacitive touch switch closes after a delay, and the nitrogen pipe 22 stops spraying.

[0052] Afterwards, the controller moves the silicon crystal 24 sequentially to the methanol chamber 11 and the pure water chamber 12. Then, the controller starts the vibrator 10 to perform ultrasonic cleaning. Due to the vibrator 10, the float 19 moves up and down. The float 19 presses the capacitive touch switch and does not press it. The capacitive touch switch needs to be touched for a set time to trigger, so it will not be triggered in the ethanol chamber and the pure water chamber 12.

[0053] After cleaning, the controller starts the heating wire, and then the air pump 2 introduces nitrogen gas through the air inlet pipe 14 for drying. After drying, the temperature of the heating wire is maintained at 40-50 degrees Celsius. The clamping part 18 places the silicon crystal 24 on the center of the turntable 26, and then the dripping tube 25 drips the solution. At the same time, the controller controls the rotating motor 13 to start and rotate slowly, so that the nucleating agent is dispersed under the action of centrifugal force. After standing for one hour, the controller starts the individual nozzle 6 to rinse the silicon crystal 24, and then starts the rotating motor 13 at a medium to low speed to spin dry the water and complete the pretreatment.

[0054] The beneficial effects of this solution are: 1. This solution automates pretreatment, reducing the risk of personnel contact with hydrofluoric acid and improving efficiency. 2. This solution effectively prevents the volatilization of hydrofluoric acid, extending the service life of the equipment. 3. Vertical rinsing is possible during rinsing, ensuring that water does not remain on the surface of the silicon crystal 24 when the nozzle 6 sprays water.

[0055] The above are merely embodiments of the present invention, and common knowledge regarding specific structures and characteristics is not described in detail here. It should be noted that those skilled in the art can make various modifications and improvements without departing from the structure of the present invention, and these should also be considered within the scope of protection of the present invention. These modifications and improvements will not affect the effectiveness of the present invention or the practicality of the patent. The scope of protection claimed in this application should be determined by the content of its claims, and the specific embodiments described in the specification can be used to interpret the content of the claims.

Claims

1. A silicon crystal pretreatment apparatus for diamond deposition, characterized in that, include: Sealed box (1): The sealed box (1) is provided with an air inlet pipe (14), an air outlet pipe (16), a cleaning chamber, a hydrofluoric acid chamber, a methanol chamber (11) and a pure water chamber (12). The cleaning chamber is provided with a nozzle (6), and the methanol chamber (11) and the pure water chamber (12) are both provided with vibrators (10). Ball screw (3): The ball screw (3) is rotatably connected to the sealed box (1); Moving part (4): The moving part (4) cooperates with the ball screw (3); Main motor: The shaft of the main motor is fixedly connected to the ball screw (3), and the main motor is fixedly connected to the sealed box (1); Telescopic mechanism (21): The telescopic mechanism (21) is fixedly connected to the moving part (4); Clamping mechanism: used to clamp silicon crystal (24), the clamping mechanism cooperates with telescopic mechanism (21); Air pump (2): The air pump (2) is connected to the air inlet pipe (14); Water pump: The water pump is connected to the nozzle (6); The dripping mechanism is used to drip silicon crystals and is located inside the sealed box (1). Heating mechanism: The heating mechanism is used to maintain the temperature inside the sealed box (1), and the heating mechanism is located inside the sealed box (1); Controller: The main motor, dripping mechanism, water pump, heating mechanism, air pump (2), vibrator (10) and telescopic mechanism (21) are all electrically connected to the controller; It also includes a first contact sensor (5), a second contact sensor (27), and an electric flip cover (7). The electric flip cover (7) is used to open and close the hydrofluoric acid chamber. The first contact sensor (5) is electrically connected to the water pump. Both the first contact sensor (5) and the second contact sensor (27) are located inside the cleaning chamber. Both the first contact sensor (5) and the second contact sensor (27) cooperate with the clamping mechanism. The second contact sensor (27) is electrically connected to the electric flip cover (7). The electric flip cover (7) is rotatably connected to the hydrofluoric acid chamber. The cleaning chamber is connected to the hydrofluoric acid chamber and the cleaning chamber and the hydrofluoric acid chamber are arranged vertically. The cleaning chamber is located above the hydrofluoric acid chamber. The cleaning chamber is provided with a drain outlet (8). The drain outlet (8) is in conjunction with the electric flip cover (7). When the clamping mechanism enters the cleaning chamber, it contacts the first contact sensor, causing the nozzle to spray water for dust removal. As the clamping mechanism continues to move downward, the nozzle stops spraying water, and the wastewater slides from the electric flip cover to the drain outlet. Then, the clamping mechanism continues to move downward and contacts the second contact sensor, causing the electric flip cover to open. The clamping mechanism, carrying the silicon crystal, enters the hydrofluoric acid interior for immersion. After immersion, the clamping mechanism rises, triggering the second contact sensor and closing the electric flip cover. The clamping mechanism continues to rise, triggering the first contact sensor and causing the nozzle to spray water, thus cleaning away the hydrofluoric acid on the silicon crystal.

2. The silicon pretreatment apparatus for diamond deposition according to claim 1, characterized in that, It also includes a gear (17) and a rack (9). The clamping mechanism includes a clamping member (18) and a connecting rod. The clamping member (18) is used to clamp the silicon crystal (24). One end of the connecting rod is rotatably connected to the clamping member (18), and the other end is fixedly connected to the telescopic mechanism (21). The gear (17) is fixedly connected to the clamping member (18), and the rack (9) is fixedly connected to the cleaning chamber. The gear (17) and the rack (9) cooperate with each other.

3. The silicon pretreatment apparatus for diamond deposition according to claim 1, characterized in that, The clamping mechanism includes a float (19), a nitrogen pipe (22), a pressure sensor, a spring (23), and a clamping member (18). The telescopic mechanism (21) has a groove (20). One end of the spring (23) is fixedly connected to the telescopic rod of the telescopic mechanism (21), and the other end is fixedly connected to the float (19). The clamping member (18) is fixedly connected to the float (19). The nitrogen pipe (22) is fixedly connected to the telescopic mechanism (21). The nitrogen pipe (22) is connected to the air pump (2). There are multiple nitrogen pipes (22), and the nitrogen pipes (22) are arranged in a circumferential array with the telescopic mechanism (21) as the center. The pressure sensor is set in the groove (20) and cooperates with the float (19). The pressure sensor is electrically connected to the controller.

4. The silicon pretreatment apparatus for diamond deposition according to claim 3, characterized in that, It also includes a timer, which is electrically connected to the controller and to the pressure sensor.

5. A pretreatment method using the silicon crystal pretreatment apparatus for diamond deposition according to any one of claims 1-4, characterized in that, Includes the following steps: step S10: Wash away the dust on the surface of the silicon crystal (24) with pure water; Step S20: Immerse the silicon crystal (24) in hydrofluoric acid, and then rinse off the hydrofluoric acid with pure water; Step S30: Dry the surface of the silicon crystal (24); Step S40: At the set temperature, DMSO is dripped onto the surface of the silicon crystal (24) and left to stand for more than 1 hour; Step S50: Rinse the silicon crystal (24) again with pure water; Step S60: Place the silicon crystal (24) on a centrifuge, spin dry to complete the pretreatment.

6. The pretreatment method of the silicon crystal pretreatment apparatus for diamond deposition according to claim 5, characterized in that, The soaking time of hydrofluoric acid in step S20 is 100-130 seconds.

7. The pretreatment method of the silicon crystal pretreatment apparatus for diamond deposition according to claim 5, characterized in that, It also includes step S25: placing the silicon crystal (24) substrate in a methanol container for ultrasonic cleaning, and then placing it in a pure water container for ultrasonic cleaning.

8. The pretreatment method of the silicon crystal pretreatment apparatus for diamond deposition according to claim 5, characterized in that, In step S40, during the dripping process, the silicon crystal (24) is rotated at a set speed.

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