Preparation method of HJT electrode of photovoltaic solar cell

Abstract

The invention discloses a photovoltaic solar cell HJT electrode preparation method, and relates to the technical field of photovoltaic solar cells. Depositing a transparent conductive indium tin oxide (ITO) thin film layer on the surface of the photovoltaic HJT cell, and depositing copper on the whole surface of the ITO thin film layer by using a physical vapor deposition (PVD) process to form a copper layer; and using a laser process to ablate the copper layer according to a preset pattern, and forming an electrode grid line on the surface of the copper layer. Through the PVD deposition and laser ablation process, the photoelectric conversion efficiency of the cell is improved, the overall performance of the cell is improved, the requirements of different photoelectric conversion devices can be met, meanwhile, the preparation cost is reduced, and the application prospect is wide.

Description

Technical Field

[0001] The present invention relates to the technical field of photovoltaic solar cells, and in particular to a method for preparing a HJT electrode for a photovoltaic solar cell. Background Art

[0002] As an important component of clean energy, the performance and efficiency of photovoltaic solar cells directly depend on the design and preparation process of electrodes. In crystalline silicon heterojunction solar cells HJT (Heterojunction with Intrinsic Thin-layer), the preparation of electrodes has an important influence on the photoelectric conversion efficiency of the cell. The current common electrode preparation method often uses indium tin oxide ITO (Indium Tin Oxide) as a transparent conductive layer, and then prints low-temperature curing silver paste on ITO and performs thermal curing; however, due to the high cost and limited conductivity of silver paste, the overall performance of the cell is restricted. In order to solve the above problems, it is particularly necessary to develop a method for preparing HJT electrodes for photovoltaic solar cells. Summary of the invention

[0003] In view of the deficiencies in the prior art, the purpose of the present invention is to provide a method for preparing HJT electrodes for photovoltaic solar cells, which is simple to prepare, improves the photoelectric conversion efficiency of the battery, reduces the preparation cost, enhances the overall performance of the battery, and is easy to promote and use.

[0004] In order to achieve the above object, the present invention is implemented by the following technical solution: a method for preparing a HJT electrode for a photovoltaic solar cell, the steps of which are:

[0005] ①ITO deposition: Deposit a transparent conductive indium tin oxide ITO thin film layer on the surface of the photovoltaic HJT cell;

[0006] ② PVD deposition of copper on the entire surface: using the physical vapor deposition (PVD) process, copper is deposited on the entire surface of the ITO film layer to form a copper layer;

[0007] ③ Laser ablation: Use laser technology to ablate the copper layer according to the preset pattern to form electrode grid lines on the surface of the copper layer.

[0008] Preferably, in step ①, the thickness of the indium tin oxide ITO thin film layer is 100 nm.

[0009] Preferably, the thickness of the copper layer in step ② is 5-20 μm.

[0010] Preferably, in step ③, the ablation depth and shape are controlled by adjusting the laser energy and scanning speed, and the width of the electrode grid lines formed by ablation is 10-30 μm.

[0011] Beneficial effects of the present invention: This method improves the photoelectric conversion efficiency of the battery and the overall performance of the battery through PVD deposition and laser ablation processes, can meet the needs of different photoelectric conversion devices, and at the same time reduces the preparation cost, and has broad application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments;

[0013] Figure 1 It is a preparation flow chart of the present invention. DETAILED DESCRIPTION

[0014] In order to make the technical means, creative features, objectives and effects achieved by the present invention easy to understand, the present invention is further explained below in conjunction with specific implementation methods.

[0015] Reference Figure 1 , this specific implementation adopts the following technical solution: a method for preparing a photovoltaic solar cell HJT electrode, the steps of which are:

[0016] ① ITO deposition: depositing a transparent conductive indium tin oxide ITO thin film layer (1) on the surface of the photovoltaic HJT cell, wherein the thickness of the indium tin oxide ITO thin film layer (1) is 100 nm;

[0017] ② PVD deposition of copper on the entire surface: using physical vapor deposition (PVD) technology, copper is deposited on the entire surface of the ITO thin film layer to form a copper layer with a thickness of 5-20 μm (2);

[0018] ③ Laser ablation: Using laser technology, the copper layer (2) is ablated according to a preset pattern to form electrode grid lines (3) on the surface of the copper layer.

[0019] This specific implementation is used to prepare battery electrodes with HJT structure, and forms precise electrode grid lines through PVD deposition of copper layer and laser ablation process, effectively improving the performance and cost-effectiveness of the battery. The thickness of the copper layer is determined according to the battery design and performance requirements, and can be adjusted to achieve the best battery efficiency; the ablation depth and shape are controlled by adjusting the laser energy and scanning speed, so as to form electrode grid lines on the surface of the copper layer. Its technical advantages are:

[0020] ⅰ. High efficiency: Through PVD deposition and laser ablation processes, high-precision electrode formation can be achieved, greatly improving the photoelectric conversion efficiency of the battery.

[0021] ⅱ. Strong process controllability: The laser ablation process can accurately control the width and shape of the electrode grid line, making the electrode design more flexible and able to meet the needs of different photoelectric conversion devices.

[0022] ⅲ. Obvious cost-effectiveness: Using copper as the conductive material, compared with the traditional ITO electrode, while maintaining good conductive properties, it can also significantly reduce the preparation cost and improve economic benefits.

[0023] In summary, this method improves the overall performance and stability of solar cells by optimizing the preparation process of electrodes, promotes the development of clean energy technology, and has broad market application prospects.

[0024] The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention. It should be understood by those skilled in the art that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention to be protected. The scope of protection of the present invention is defined by the attached claims and their equivalents.

Claims

1. A method for preparing a HJT electrode for a photovoltaic solar cell, characterized in that: The steps are: ① ITO deposition: depositing a transparent conductive indium tin oxide (ITO) thin film layer on the surface of the photovoltaic HJT cell (1); ② PVD deposition of copper on the entire surface: using the physical vapor deposition (PVD) process, copper is deposited on the entire surface of the ITO thin film layer to form a copper layer (2); ③ Laser ablation: Using laser technology, the copper layer (2) is ablated according to a preset pattern to form electrode grid lines (3) on the surface of the copper layer.

2. A method for preparing a photovoltaic solar cell HJT electrode according to claim 1, characterized in that: In the step ①, the thickness of the indium tin oxide ITO thin film layer (1) is 100 nm.

3. The method for preparing a photovoltaic solar cell HJT electrode according to claim 1, characterized in that: In the step ②, the thickness of the copper layer (2) is 5-20 μm.

4. The method for preparing a photovoltaic solar cell HJT electrode according to claim 1, characterized in that: In step ③, the ablation depth and shape are controlled by adjusting the laser energy and scanning speed.

5. The method for preparing a photovoltaic solar cell HJT electrode according to claim 1, characterized in that: The width of the electrode grid lines (3) formed by ablation in step ③ is 10-30 μm.

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