Sand blasting process for PVD deposition ring in semiconductor processing

Abstract

The invention relates to the technical field of semiconductor processing, and particularly discloses a PVD deposition ring sand blasting process in semiconductor processing, which comprises the following steps: selecting a sand material based on a PVD deposition ring, placing the PVD deposition ring in a processing station on a sand blasting machine, and fixing the PVD deposition ring; the area of a sand blasting target area on the surface of the PVD deposition ring is obtained, sand blasting data of the sand blasting machine on the surface of the PVD deposition ring is adjusted, and sand blasting is conducted on the surface of the PVD deposition ring; after the surface of the PVD deposition ring is subjected to sand blasting, a cleaning agent is adopted to clean the surface of the PVD deposition ring, residual sand is removed, roughness detection is carried out on each divided target area of the surface of the PVD deposition ring, and when the surface roughness of the target sand blasting area cannot meet the requirement, sand blasting work is carried out on the surface of the target sand blasting area. And the surface area of the PVD deposition ring meets the surface requirements, the quality inspection effect on the sand blasting of the PVD deposition ring is achieved, and the sand blasting qualification rate of the PVD deposition ring is further guaranteed.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor processing, and in particular to a PVD deposition ring sandblasting process in semiconductor processing. Background Art

[0002] During the PVD deposition ring processing, there are requirements for the surface roughness of the deposition ring components, and the surface of the deposition ring components needs to be sandblasted. When sandblasting the deposition ring components during cleaning and regeneration, high-temperature resistant tape is usually used to protect the non-sandblasting area of ​​the deposition ring components, and then the target sandblasting area is sandblasted; during the sandblasting process, the surface treatment of the deposition ring needs to meet the processing requirements, but in the sandblasting process, large-area sandblasting has poor accuracy, and different sandblasting time and sandblasting distance are prone to unqualified sandblasting. Therefore, improving the accuracy of sandblasting and ensuring the sandblasting effect are the top priorities for improving product qualification rate. Summary of the invention

[0003] The object of the present invention is to provide a PVD deposition ring sandblasting process in semiconductor processing to solve the above-mentioned background problems.

[0004] The purpose of the present invention can be achieved by the following technical solutions:

[0005] A PVD deposition ring sandblasting process in semiconductor processing comprises the following steps:

[0006] Step 1: Select abrasive materials based on the PVD deposition ring, place the PVD deposition ring in a processing station on the sandblasting machine and fix it;

[0007] Step 2: obtaining the target area of ​​the sandblasting on the surface of the PVD deposition ring, adjusting the sandblasting data of the sandblasting machine on the surface of the PVD deposition ring, and sandblasting the surface of the PVD deposition ring;

[0008] Specific:

[0009] 021: Obtain the sandblasting area on the surface of the PVD deposition ring, divide the target sandblasting area into regions with a unit length value e, obtain mXn target sandblasting areas, construct a coordinate system on the target sandblasting area, and mark the coordinates of each target sandblasting area as (x, y), where x is 1, 2, 3...m, and y is 1, 2, 3...n;

[0010] 022: traverse the target blasting area (x, y) on the surface of the PVD deposition ring and blast the target blasting area;

[0011] 023: traverse and calculate the surface state performance value BJY of the target sandblasting area (x, y) (x，y) ;

[0012] 024: The surface condition value BJY of the target blasting area (x, y) (x，y) Compare with the surface condition threshold value BJYZ; obtain the regional sandblasting qualified signal or the regional sandblasting compensation signal;

[0013] Step 3: After the surface of the PVD deposition ring is sandblasted, a cleaning agent is used to clean the surface of the PVD deposition ring to remove residual sand.

[0014] As a further solution of the present invention, traversing the target blasting area (x, y) on the surface of the PVD deposition ring and blasting the target blasting area specifically comprises the following steps:

[0015] 0221: Get the initial state data of the target sandblasting area (x, y); including: the highest value QLG of the area contour point (x，y) and regional roughness value QYCC (x，y) ;

[0016] 0222: Set the regional roughness value QYCC (x，y) Compare with the roughness standard value CCDB; get the regional surface sandblasting signal;

[0017] 0223: Based on the regional surface sandblasting signal, the regional surface initial state data of the target sandblasting area (x, y) is obtained, and the sandblasting data of the target sandblasting area (x, y) is calculated;

[0018] 0224: Sandblasting based on sandblasting data.

[0019] As a further solution of the present invention: the sandblasting data includes: sandblasting distance value PJ (x，y) And the sandblasting time value PT (x，y) .

[0020] As a further solution of the present invention: the regional roughness value QYCC (x，y) Compare with the roughness standard value CCDB:

[0021] If the regional roughness value QYCC (x，y) Less than or equal to the roughness standard value CCDB, generating a qualified signal for regional pre-detection;

[0022] If the regional roughness value QYCC (x，y) If the roughness is greater than the standard value CCDB, a sandblasting signal of the area surface is generated.

[0023] As a further solution of the present invention: the sandblasting distance value PJ (x，y) The calculation method is:

[0024] Get the maximum value QLG of the area contour point in the target sandblasting area (x, y)(x，y) ;

[0025] By PJ (x，y) =a×QLG (x，y) +b Calculate the blasting distance value PJ of the target blasting area (x, y) (x，y) , where a is the sandblasting distance influence coefficient and b is the sandblasting distance correction value.

[0026] As a further solution of the present invention: the sandblasting time value PT (x，y) The calculation method is:

[0027] Get the regional roughness value QYCC in the target sandblasting area (x, y) (x，y) ; and based on the blasting distance value PJ (x，y) ,pass Calculate the sandblasting time value PT (x，y) ; Among them, c is the influence coefficient of sandblasting distance, and d is the influence coefficient of sandblasting time.

[0028] As a further solution of the present invention: the surface state performance value BJY (x，y) The way to obtain is:

[0029] Obtain the surface feature data of the target blasting area (x, y) after blasting, including the highest value SPG of the regional blasting point (x，y) , Regional sandblasting point minimum value SPD (x，y) And the area sandblasting roughness value PSCC (x，y) ;

[0030] By BJY (x，y) =PSCC (x，y) ×[(|SPG (x，y) -PSCC (x，y) |)+(|SPD (x，y) -PSCC (x，y) |)] Calculate the surface state performance value BJY of the target blasting area (x, y) (x，y) .

[0031] As a further solution of the present invention: the surface state performance value BJY of the target blasting area (x, y) is (x，y) Compare with the surface state performance threshold BJYZ:

[0032] If the surface state shows value BJY (x，y) Less than or equal to the surface condition threshold BJYZ, generating a qualified signal for regional sandblasting;

[0033] If the surface state shows value BJY (x，y) When the surface condition value is greater than the surface condition threshold value BJYZ, a regional sandblasting compensation signal is generated.

[0034] As a further solution of the present invention: based on the regional sandblasting compensation signal, sandblasting compensation is performed in the target sandblasting area (x, y), and the roughness of the target sandblasting area is adjusted to reduce. At the same time, sandblasting is performed on the higher parts of the regional sandblasting points in the target sandblasting area (x, y).

[0035] As a further solution of the present invention: the sandblasting distance influence coefficient c and the sandblasting time influence coefficient d are obtained as follows:

[0036] Acquire several groups of sandblasting test data sets in the PVD deposition ring sandblasting process in semiconductor processing, including: a test area roughness value CSCC of the sandblasting area, and simultaneously acquire a test sandblasting time value CSSJ when the test area roughness value is adjusted from CSCC to a roughness standard value CCDB under a test sandblasting distance value CSJL based on the test area;

[0037] Then, based on several sets of sandblasting test data sets, the sandblasting distance influence coefficient c and the sandblasting time influence coefficient d are obtained through training through CSCC-CCDB=c×CSJL+d×CSSJ.

[0038] Beneficial effects of the present invention:

[0039] In the present invention, the surface of the PVD deposition ring is divided into regions. On the one hand, the degree of refinement of the sandblasting can be improved during the sandblasting process. On the other hand, the sandblasting of the PVD deposition ring can be precisely controlled to reduce the situation where the sandblasting area is too large and the sandblasting is uneven, which affects the cleanliness of the surface of the PVD deposition ring.

[0040] By performing roughness detection on each target area of ​​the PVD deposition ring surface, when the surface roughness of the target sandblasting area cannot meet the requirements, sandblasting is performed on the surface to make the surface areas of the PVD deposition ring meet the surface requirements;

[0041] After the sandblasting of the PVD deposition ring surface is completed, the characteristic data of the PVD deposition ring surface is acquired in turn, and the surface state of the target sandblasting area is calculated based on the surface characteristic data to obtain the surface state performance value of the target sandblasting area, and further judge whether the state of the deposition ring surface is qualified, so as to ensure that the subsequent processing and use requirements can be met after the PVD deposition ring is sandblasted; it further plays the role of quality inspection for the sandblasting of the PVD deposition ring, and further ensures the sandblasting pass rate of the PVD deposition ring. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] The present invention will be further described below in conjunction with the accompanying drawings.

[0043] Figure 1 It is a schematic diagram of the process flow of the present invention;

[0044] Figure 2 It is a schematic diagram of the surface sandblasting process in the present invention. DETAILED DESCRIPTION

[0045] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0046] Embodiment 1

[0047] See also Figure 1 and Figure 2 As shown, the present invention is a PVD deposition ring sandblasting process in semiconductor processing, comprising the following steps:

[0048] Step 1: Select abrasive materials based on the PVD deposition ring, place the PVD deposition ring in a processing station on the sandblasting machine and fix it;

[0049] Step 2: obtaining the target area of ​​the sandblasting on the surface of the PVD deposition ring, adjusting the sandblasting data of the sandblasting machine on the surface of the PVD deposition ring, and sandblasting the surface of the PVD deposition ring;

[0050] Specific:

[0051] 021: Obtain the sandblasting area on the surface of the PVD deposition ring, divide the target sandblasting area into regions with a unit length value e, obtain mXn target sandblasting areas, construct a coordinate system on the target sandblasting area, and mark the coordinates of each target sandblasting area as (x, y), where x is 1, 2, 3...m, and y is 1, 2, 3...n;

[0052] Dividing the surface of the PVD deposition ring into regions can, on the one hand, improve the degree of refinement of the sandblasting during the sandblasting process, and on the other hand, ensure that the sandblasting of the PVD deposition ring is precisely controlled, reducing the situation where the sandblasting area is too large, resulting in uneven sandblasting and affecting the cleanliness of the PVD deposition ring surface;

[0053] 022: traverse the target blasting area (x, y) on the surface of the PVD deposition ring and blast the target blasting area;

[0054] The following steps are involved:

[0055] 0221: Get the initial state data of the target sandblasting area (x, y); including: the highest value QLG of the area contour point (x，y) and regional roughness value QYCC (x，y) ;

[0056] 0222: Set the regional roughness value QYCC (x，y) Compare with the roughness standard value CCDB;

[0057] If the regional roughness value QYCC (x，y) If the surface roughness is less than or equal to the roughness standard value CCDB, a qualified signal for regional pre-detection is generated; indicating that the surface roughness of the target sandblasting area (x, y) in the initial state meets the requirements; execute 023;

[0058] If the regional roughness value QYCC (x，y) If the roughness is greater than the standard value CCDB, a regional surface sandblasting signal is generated; based on the regional surface sandblasting signal, the target sandblasting area (x, y) on the surface of the PVD deposition ring is sandblasted, and 0223 is executed;

[0059] 0223: Based on the regional surface sandblasting signal, the regional surface initial state data of the target sandblasting area (x, y) is obtained, and the sandblasting data of the target sandblasting area (x, y) is calculated;

[0060] Among them, the sandblasting data includes: sandblasting distance value PJ (x，y) And the sandblasting time value PT (x，y) ;

[0061] Sandblasting distance value PJ (x，y) The calculation method is:

[0062] Get the maximum value QLG of the area contour point in the target sandblasting area (x, y) (x，y) ;

[0063] By PJ (x，y) =a×QLG (x，y) +b Calculate the blasting distance value PJ of the target blasting area (x, y) (x，y) , where a is the influence coefficient of the sandblasting distance and b is the correction value of the sandblasting distance;

[0064] Since the sandblasting distance affects the sandblasting effect, the sandblasting distance value is obtained by calculating the maximum value of the regional contour point in the target sandblasting area, and the optimal sandblasting distance value of the target sandblasting area in this state is obtained to ensure that the subsequent sandblasting can be optimized;

[0065] Sandblasting time value PT (x，y) The calculation method is:

[0066] Get the regional roughness value QYCC in the target sandblasting area (x, y) (x，y) ; and based on the blasting distance value PJ (x，y) ,pass Calculate the sandblasting time value PT (x，y); Where c is the influence coefficient of sandblasting distance, and d is the influence coefficient of sandblasting time;

[0067] 0224: Based on the sandblasting data, adjust the sandblasting distance value to PJ (x，y) , keep the blasting time value PT for the target blasting area (x, y) (x，y) Perform sandblasting; after sandblasting is completed, execute 023;

[0068] By performing roughness detection on each target area of ​​the PVD deposition ring surface, when the surface roughness of the target sandblasting area cannot meet the requirements, sandblasting is performed on the surface to make the surface areas of the PVD deposition ring meet the surface requirements;

[0069] 023: Calculate the surface state of the target blasting area (x, y) under the qualified signal of the area pre-detection and after the blasting is completed, and traverse and calculate the surface state performance value BJY of the target blasting area (x, y) (x，y) ;

[0070] About the surface condition performance value BJY (x，y) The way to obtain is:

[0071] Obtain the surface feature data of the target blasting area (x, y) after blasting, including the highest value SPG of the regional blasting point (x，y) , Regional sandblasting point minimum value SPD (x，y) And the area sandblasting roughness value PSCC (x，y) ;

[0072] It should be noted that the surface feature data acquired in this step is based on the re-acquisition of the surface data of all target blasting areas after the target blasting areas are blasted under the surface blasting signal, that is, the surface feature data of the target blasting area under the regional pre-detection qualified signal is the same as the surface initial state data;

[0073] By BJY (x，y) =PSCC (x，y) ×[(|SPG (x，y) -PSCC (x，y) |)+(|SPD (x，y) -PSCC (x，y) |)] Calculate the surface state performance value BJY of the target blasting area (x, y) (x，y) ;

[0074] 024: The surface condition value BJY of the target blasting area (x, y) (x，y) Compare with the surface state performance threshold BJYZ;

[0075] If the surface state shows the value BJY (x，y)Less than or equal to the surface condition threshold BJYZ, generating a qualified signal for regional sandblasting;

[0076] If the surface state shows value BJY (x，y) is greater than the surface state expression threshold value BJYZ, a regional sandblasting compensation signal is generated; based on the regional sandblasting compensation signal, sandblasting compensation is performed in the target sandblasting area (x, y), and the roughness of the target sandblasting area is adjusted to be reduced. At the same time, sandblasting is performed on the higher part of the regional sandblasting point in the target sandblasting area (x, y);

[0077] After the PVD deposition ring surface is sandblasted, the characteristic data of the PVD deposition ring surface is acquired in turn, and the surface state of the target sandblasting area is calculated based on the surface characteristic data to obtain the surface state performance value of the target sandblasting area, and further judge whether the state of the deposition ring surface is qualified, so as to ensure that the subsequent processing and use requirements can be met after the PVD deposition ring is sandblasted; it further plays the role of quality inspection for the PVD deposition ring sandblasting, and further ensures the sandblasting qualification rate of the PVD deposition ring;

[0078] Step 3: After the surface of the PVD deposition ring is sandblasted, a cleaning agent is used to clean the surface of the PVD deposition ring to remove residual sand.

[0079] Embodiment 2

[0080] This embodiment is based on the sandblasting process in the first embodiment, and the method for obtaining the sandblasting distance influence coefficient c and the sandblasting time influence coefficient d includes the following steps:

[0081] Acquire several groups of sandblasting test data sets in the PVD deposition ring sandblasting process in semiconductor processing, including: a test area roughness value CSCC of the sandblasting area, and simultaneously acquire a test sandblasting time value CSSJ when the test area roughness value is adjusted from CSCC to a roughness standard value CCDB under a test sandblasting distance value CSJL based on the test area;

[0082] Then, based on several sets of sandblasting test data sets, the sandblasting distance influence coefficient c and the sandblasting time influence coefficient d are obtained through training through CSCC-CCDB=c×CSJL+d×CSSJ.

[0083] In addition, the sandblasting distance influence coefficient a and the sandblasting distance correction value b are obtained by training the highest value of the sandblasting area contour point in the sandblasting area in the test data in several groups of tests.

[0084] At the same time, during the training process of the sandblasting distance influence coefficient a, the sandblasting distance correction value b, the sandblasting distance influence coefficient c and the sandblasting time influence coefficient d, the training can be updated based on the data during the sandblasting process to ensure that more accurate data is obtained and the sandblasting effect of the PVD deposition ring is improved.

[0085] Embodiment 3

[0086] Based on the above embodiments, this embodiment provides a sandblasting system for a PVD deposition ring, including:

[0087] Data acquisition module: used to obtain the sandblasting area on the surface of the PVD deposition ring, divide the target sandblasting area into regions with a unit length value e, obtain mXn target sandblasting areas, build a coordinate system on the target sandblasting area, and mark the coordinates of each target sandblasting area as (x, y), where x is 1, 2, 3...m, and y is 1, 2, 3...n;

[0088] Sandblasting module: traverses the target sandblasting area (x, y) on the surface of the PVD deposition ring and sandblasts the target sandblasting area;

[0089] Verification module: traverse and calculate the surface state performance value BJY of the target sandblasting area (x, y) (x，y) ;

[0090] Analysis and compensation module: The surface state performance value BJY of the target sandblasting area (x, y) (x，y) Compare with the surface condition threshold value BJYZ; obtain the regional sandblasting qualified signal or the regional sandblasting compensation signal;

[0091] The surface of the PVD deposition ring is divided into regions. On the one hand, the degree of sandblasting refinement can be improved during the sandblasting process. On the other hand, the sandblasting of the PVD deposition ring can be precisely controlled to reduce the uneven sandblasting caused by the sandblasting area being too large, which affects the surface cleanliness of the PVD deposition ring. The roughness of each target area of ​​the PVD deposition ring surface is tested. When the surface roughness of the target sandblasting area cannot meet the requirements, the surface is sandblasted to make the surface area of ​​the PVD deposition ring meet the surface requirements. It is further judged whether the state of the deposition ring surface is qualified to ensure that the subsequent processing and use requirements can be met after the PVD deposition ring is sandblasted. It further plays a role in quality inspection of the sandblasting of the PVD deposition ring and further ensures the sandblasting pass rate of the PVD deposition ring.

[0092] The above is a detailed description of an embodiment of the present invention, but the content is only a preferred embodiment of the present invention and cannot be considered to limit the scope of implementation of the present invention. All equivalent changes and improvements made within the scope of the present invention should still fall within the scope of the patent coverage of the present invention.

Claims

1. A PVD deposition ring sandblasting process in semiconductor processing, characterized in that: The following steps are involved: Step 1: Select abrasive materials based on the PVD deposition ring, place the PVD deposition ring in a processing station on the sandblasting machine and fix it; Step 2: obtaining the target area of ​​the sandblasting on the surface of the PVD deposition ring, adjusting the sandblasting data of the sandblasting machine on the surface of the PVD deposition ring, and sandblasting the surface of the PVD deposition ring; Specific: 021: Obtain the sandblasting area on the surface of the PVD deposition ring, divide the target sandblasting area into regions with a unit length value e, obtain mXn target sandblasting areas, construct a coordinate system on the target sandblasting area, and mark the coordinates of each target sandblasting area as (x, y), where x is 1, 2, 3...m, and y is 1, 2, 3...n; 022: traverse the target blasting area (x, y) on the surface of the PVD deposition ring and blast the target blasting area; 023: traverse and calculate the surface state performance value BJY of the target sandblasting area (x, y) (x，y) ; 024: The surface condition value BJY of the target blasting area (x, y) (x，y) Compare with the surface condition threshold value BJYZ; obtain the regional sandblasting qualified signal or the regional sandblasting compensation signal; Step 3: After the surface of the PVD deposition ring is sandblasted, a cleaning agent is used to clean the surface of the PVD deposition ring to remove residual sand.

2. A PVD deposition ring sandblasting process in semiconductor processing according to claim 1, characterized in that: Traversing a target blasting area (x, y) on the surface of the PVD deposition ring and blasting the target blasting area; The specific steps include: 0221: Get the initial state data of the target sandblasting area (x, y); including: the highest value QLG of the area contour point (x，y) and regional roughness value QYCC (x，y) ; 0222: Set the regional roughness value QYCC (x，y) Compare with the roughness standard value CCDB; get the regional surface sandblasting signal; 0223: Based on the regional surface sandblasting signal, the regional surface initial state data of the target sandblasting area (x, y) is obtained, and the sandblasting data of the target sandblasting area (x, y) is calculated; 0224: Sandblasting based on sandblasting data.

3. The PVD deposition ring sandblasting process in semiconductor processing according to claim 2, characterized in that: The regional roughness value QYCC (x，y) Compare with the roughness standard value CCDB: If the regional roughness value QYCC (x，y) Less than or equal to the roughness standard value CCDB, generating a qualified signal for regional pre-detection; If the regional roughness value QYCC (x，y) If the roughness is greater than the standard value CCDB, a sandblasting signal of the area surface is generated.

4. The PVD deposition ring sandblasting process in semiconductor processing according to claim 2, characterized in that: The sandblasting data includes: sandblasting distance value PJ (x，y) And the sandblasting time value PT (x，y) .

5. A PVD deposition ring sandblasting process in semiconductor processing according to claim 4, characterized in that: The blasting distance value PJ (x，y) The calculation method is: Get the maximum value QLG of the area contour point in the target sandblasting area (x, y) (x，y) ; By PJ (x，y) =a×QLG (x，y) +b Calculate the blasting distance value PJ of the target blasting area (x, y) (x，y) , where a is the sandblasting distance influence coefficient and b is the sandblasting distance correction value.

6. A PVD deposition ring sandblasting process in semiconductor processing according to claim 4, characterized in that: The sandblasting time value PT (x，y) The calculation method is: Get the regional roughness value QYCC in the target sandblasting area (x, y) (x，y) ; and based on the blasting distance value PJ (x，y) ,pass Calculate the sandblasting time value PT (x，y) ; Among them, c is the influence coefficient of sandblasting distance, and d is the influence coefficient of sandblasting time.

7. The PVD deposition ring sandblasting process in semiconductor processing according to claim 1, characterized in that: The surface condition performance value BJY (x，y) The way to obtain is: Obtain the surface feature data of the target blasting area (x, y) after blasting, including the highest value SPG of the regional blasting point (x，y) , Regional sandblasting point minimum value SPD (x，y) And the area sandblasting roughness value PSCC (x，y) ; By BJY (x，y) =PSCC (x，y) ×[(|SPG (x，y) -PSCC (x，y) |)+(|SPD (x，y) -PSCC (x，y) |)] Calculate the surface state performance value BJY of the target blasting area (x, y) (x，y) .

8. The PVD deposition ring sandblasting process in semiconductor processing according to claim 1, characterized in that: The surface condition value BJY of the target blasting area (x, y) (x，y) Compare with the surface state performance threshold BJYZ: If the surface state shows the value BJY (x，y) Less than or equal to the surface condition threshold BJYZ, generating a qualified signal for regional sandblasting; If the surface state shows the value BJY (x，y) When the surface condition value is greater than the surface condition threshold value BJYZ, a regional sandblasting compensation signal is generated.

9. A PVD deposition ring sandblasting process in semiconductor processing according to claim 8, characterized in that: Based on the regional sandblasting compensation signal, sandblasting compensation is performed in the target sandblasting area (x, y), and the roughness of the target sandblasting area is adjusted to reduce. At the same time, sandblasting is performed on the higher parts of the regional sandblasting points in the target sandblasting area (x, y).

10. A PVD deposition ring sandblasting process in semiconductor processing according to claim 8, characterized in that: The sandblasting distance influence coefficient c and the sandblasting time influence coefficient d are obtained as follows: Acquire several groups of sandblasting test data sets in the PVD deposition ring sandblasting process in semiconductor processing, including: a test area roughness value CSCC of the sandblasting area, and simultaneously acquire a test sandblasting time value CSSJ when the test area roughness value is adjusted from CSCC to a roughness standard value CCDB under a test sandblasting distance value CSJL based on the test area; Then, based on several sets of sandblasting test data sets, the sandblasting distance influence coefficient c and the sandblasting time influence coefficient d are obtained through training through CSCC-CCDB=c×CSJL+d×CSSJ.

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