Semiconductor reaction chamber and use method thereof

Abstract

The invention provides a semiconductor reaction chamber and a use method thereof. The reaction chamber comprises a chamber body, an air inlet flange and a supporting piece, the cavity comprises a cavity body and a first cavity flange fixed to the first side of the cavity body, the first cavity flange is provided with a first transmission port and a second transmission port, and the first transmission port and the second transmission port are both configured to allow a substrate to pass through the first transmission port and the second transmission port; the air inlet flange is located on the side, away from the cavity body, of the first cavity flange and is configured to be a first air inlet flange or a second air inlet flange, a wafer conveying opening of the first air inlet flange is communicated with the first conveying opening, and a wafer conveying opening of the second air inlet flange is communicated with the second conveying opening. The support member is partially located within the cavity body and the support member is configured to carry a substrate. The first cavity flange of the cavity is provided with the first transmission port and the second transmission port, and the cavity can adapt to different air inlet flanges, so that the semiconductor reaction cavity is compatible with two substrate cavity entering modes, and the application scenarios of the semiconductor reaction cavity are increased.

Description

Technical Field

[0001] The present invention mainly relates to the field of semiconductor preparation technology, and in particular to a semiconductor reaction chamber and a method of using the same. Background Art

[0002] With the continuous development of semiconductor technology and the continuous expansion of its application fields, semiconductor manufacturing equipment is also constantly being updated to meet the manufacturing needs of higher precision, higher efficiency and lower cost. The semiconductor reaction chamber is one of the indispensable equipment in the semiconductor manufacturing process. It is mainly used for material deposition, etching and other reactions. It is one of the most important components in the semiconductor industry and plays a vital role in the manufacture of semiconductor devices.

[0003] In the related art, semiconductor reaction chambers all have a single entry mode, that is, there is only one substrate entry transfer port, which is difficult to adapt to more production needs and has limited application scenarios. Summary of the invention

[0004] The technical problem to be solved by the present invention is to provide a semiconductor reaction chamber and a method of using the same. By providing a chamber with a first transmission port and a second transmission port and adapting different air inlet flanges to the chamber, the semiconductor reaction chamber can be compatible with two substrate entry methods, thereby increasing the application scenarios of the semiconductor reaction chamber.

[0005] To solve the above technical problems, in a first aspect, the present invention provides a semiconductor reaction chamber, comprising: a chamber body, wherein the chamber body comprises a chamber body and a first chamber flange fixed to a first side of the chamber body, wherein the first chamber flange has a first transfer port and a second transfer port, wherein the first transfer port and the second transfer port are both configured to allow a substrate to pass therethrough, and the first transfer port is positioned higher than the second transfer port; an air inlet flange, wherein the air inlet flange is located on a side of the first chamber flange away from the chamber body, wherein the air inlet flange is configured as a first type of air inlet flange or a second type of air inlet flange, wherein the film transfer port of the first type of air inlet flange is connected to the first transfer port, and the film transfer port of the second type of air inlet flange is connected to the second transfer port; and a support member, wherein a portion of the support member is located in the chamber body, and the support member is used to support the substrate.

[0006] Optionally, the cavity further comprises a second chamber flange fixed to a second side of the cavity body, and the second chamber flange has an air outlet.

[0007] Optionally, it also includes an air inlet channel extending in the air inlet flange, wherein the first end of the air inlet channel is an air inlet end for connecting to an upstream gas passage, and the second end of the air inlet channel is an air outlet end for providing the substrate with gas required for thin film deposition.

[0008] Optionally, in the first type of air inlet flange, the air inlet channel is a first vertical channel that runs through a solid body between the upper surface of the air inlet flange and the film transmission port.

[0009] Optionally, in the second type of air inlet flange, the air inlet channel includes a second vertical channel and a transverse channel passing through the air inlet flange, wherein the first end of the second vertical channel passes through the upper surface of the air inlet flange, the second end of the second vertical channel is connected to the first end of the transverse channel, and the second end of the transverse channel is exposed to the first transmission port.

[0010] Optionally, the support member includes a tray bracket, a substrate tray, an ejector pin and an ejector pin bracket; the substrate tray is arranged on the tray bracket; the ejector pin is movably arranged on the substrate tray, and when the ejector pin is supported by the substrate tray, the upper surface of the ejector pin is flush with the upper surface of the substrate tray or is located below the upper surface of the substrate tray; the top end of the ejector pin bracket has an ejector pin support, and the ejector pin support is used to support the ejector pin; the ejector pin bracket is coaxially arranged with the tray bracket.

[0011] Optionally, the tray support comprises a support shaft and a plurality of support arms; one end of the plurality of support arms is fixed to the support shaft, and the other end of the plurality of support arms is fixed to the substrate tray.

[0012] Optionally, a projected length of the support arm on the substrate tray is smaller than a distance from the ejector pin to the support shaft.

[0013] Optionally, a stopper is further provided in the cavity body, and the stopper is configured to adjust the height of the upper surface of the ejector pin; each of the stoppers is located below the corresponding ejector pin.

[0014] Optionally, the lower wall of the cavity body has a groove, which is recessed downward from the upper surface of the lower wall, and the stop member includes a lower mounting portion and an upper supporting portion, the lower surface of the mounting portion of the stop member abuts against the bottom of the groove, and the supporting portion of the stop member is used to support the ejector pin.

[0015] Optionally, when the lower surface of the mounting portion of the stopper is in a state of abutting against the groove, a gap is provided between the lower surface of the supporting portion of the stopper and the lower wall.

[0016] In a second aspect, the present invention provides a method for using a semiconductor reaction chamber, using the semiconductor reaction chamber as described in the first aspect, comprising: selecting the first air inlet flange; the robot is configured to transfer the substrate from the film transfer port of the first air inlet flange and the first transfer port of the cavity to the semiconductor reaction chamber; the ejector pin holder rises to support the substrate on the upper surface of the ejector pin; the robot withdraws from the semiconductor reaction chamber; the ejector pin holder descends to allow the substrate to fall on the substrate tray.

[0017] In a third aspect, the present invention provides a method for using a semiconductor reaction chamber, using the semiconductor reaction chamber as described in the first aspect, comprising: selecting the second air inlet flange; rotating the ejector pin holder so that the ejector pin holder is offset from the ejector pin; the robot is configured to transfer the substrate into the semiconductor reaction chamber from the second transfer port of the semiconductor reaction chamber and drop the substrate onto the upper surface of the ejector pin; the robot exits the semiconductor reaction chamber; the tray holder drives the substrate tray to rise to a process position, and the process position is a position for the substrate to undergo thin film deposition.

[0018] Compared with the prior art, the present invention has the following advantages: the first chamber flange of the cavity has a first transfer port and a second transfer port, and the first transfer port and the second transfer port are both configured to allow the substrate to pass therethrough, thereby enabling the semiconductor reaction chamber to be compatible with two substrate entry methods, which is more flexible and increases the application scenarios of the semiconductor reaction chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The accompanying drawings are included to provide a further understanding of the present application. They are included and constitute a part of the present application. The accompanying drawings illustrate embodiments of the present application and together with the present specification serve to explain the principles of the present application. In the accompanying drawings:

[0020] Figure 1 It is a schematic structural diagram of a semiconductor reaction chamber in one embodiment of the present invention under a usage condition;

[0021] Figure 2 yes Figure 1 A schematic diagram of a semiconductor reaction chamber during deposition is shown;

[0022] Figure 3 is a schematic structural diagram of a semiconductor reaction chamber in another use condition according to an embodiment of the present invention;

[0023] Figure 4 yes Figure 3 A schematic diagram of a semiconductor reaction chamber during deposition is shown;

[0024] Figure 5It is a top view of a positional relationship between a tray support and an ejector support in one embodiment of the present invention;

[0025] Figure 6 is a top view of another positional relationship between the tray support and the ejector support in one embodiment of the present invention;

[0026] Figure 7 is a schematic flow chart of a method for using a semiconductor reaction chamber according to an embodiment of the present invention;

[0027] Figure 8 It is a schematic flow chart of another method of using a semiconductor reaction chamber according to an embodiment of the present invention;

[0028] Fig. 9 The figure is a flow chart of another method for using the semiconductor reaction chamber according to an embodiment of the present invention.

[0029] It should be noted that Figure 3 and Figure 4 The ejector bracket is not shown in the figure to better illustrate the essential content of the present invention.

[0030] The numbers in the figure are:

[0031] 100- cavity;

[0032] 110 - cavity body, 120 - first chamber flange, 130 - second chamber flange;

[0033] 111 - groove, 121 - first transmission port, 122 - second transmission port, 131 - air outlet;

[0034] 200-intake flange;

[0035] 210-first type of air inlet flange, 220-second type of air inlet flange;

[0036] 201-first vertical channel, 202-second vertical channel, 203-lateral channel;

[0037] 300-support member;

[0038] 310-tray support, 320-substrate tray, 330-throw pin, 340-throw pin support;

[0039] 311-support shaft, 312-support arm;

[0040] 400-stopper;

[0041] 500-rear heating plate;

[0042] 600-substrate. DETAILED DESCRIPTION

[0043] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for the description of the embodiments. Obviously, the drawings described below are only some examples or embodiments of the present application. For ordinary technicians in this field, the present application can also be applied to other similar scenarios based on these drawings without creative work. Unless it is obvious from the language environment or otherwise explained, the same reference numerals in the figures represent the same structure or operation.

[0044] In the description of the present application, it should be understood that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "lateral, vertical, perpendicular, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the device or element referred to must have a specific direction or be constructed and operated in a specific direction, and therefore cannot be understood as limiting the scope of protection of the present application; the directional words "inside and outside" refer to the inside and outside relative to the contours of each component itself.

[0045] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used here to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0046] In addition, it should be noted that the use of words such as "first" and "second" to define components is only for the convenience of distinguishing the corresponding components. If not otherwise stated, the above words have no special meaning and cannot be understood as limiting the scope of protection of this application. In addition, although the terms used in this application are selected from well-known and commonly used terms, some terms mentioned in the specification of this application may be selected by the applicant at his or her discretion, and their detailed meanings are explained in the relevant parts of the description of this article. In addition, it is required to understand this application not only by the actual terms used, but also by the meaning implied by each term.

[0047] Flowcharts are used in this application to illustrate the operations performed by a semiconductor reaction chamber according to an embodiment of the present application. It should be understood that the preceding or following operations are not necessarily performed in exact order. Instead, various steps may be processed in reverse order or simultaneously. At the same time, other operations may be added to these processes, or one or more operations may be removed from these processes.

[0048] An embodiment of the present invention provides a semiconductor reaction chamber, referring to Figure 1 to Figure 4 As shown, it mainly includes a cavity 100, an air inlet flange 200 and a support member 300, wherein:

[0049] The chamber 100 includes a chamber body 110 and a first chamber flange 120 fixed to a first side of the chamber body 110. The first chamber flange 120 has a first transfer port 121 and a second transfer port 122. The first transfer port 121 and the second transfer port 122 are both configured to allow the substrate 600 to pass therethrough. The first transfer port 121 is located higher than the second transfer port 122. The inlet flange 200 is located on a side of the first chamber flange 120 away from the chamber body 110. The inlet flange 200 is configured as a first inlet flange 210 or a second inlet flange 220. When configured as the first inlet flange 210, refer to Figure 1 and Figure 2 As shown, Figure 2 Where P1, P2 and P3 represent process gas, purge gas and exhaust gas respectively. The transmission port of the first inlet flange 210 is connected to the first transmission port 121. When the second inlet flange 220 is configured, refer to Figure 3 and Figure 4 As shown, Figure 4 P1, P2 and P3 represent process gas, purge gas and exhaust gas respectively, and the wafer transfer port of the second inlet flange 220 is connected to the second transfer port 122. The support member 300 is partially located in the chamber body 110, and the support member 300 is used to carry the substrate 600 (such as a wafer).

[0050] In this embodiment, the first chamber flange 120 has a first transfer port 121 and a second transfer port 122, and the first transfer port 121 is located higher than the second transfer port 122. The transfer ports are distinguished only by their positions on the first chamber flange 120. The first transfer port 121 can also be called the upper chamber transfer port, and the corresponding substrate 600 transfer method is upper chamber transfer. The second transfer port 122 is the lower chamber transfer port, and the corresponding substrate 600 transfer method is lower chamber transfer. Both transfer ports can transfer substrates 600.

[0051] In this embodiment, the substrate 600 can enter the cavity 100 from the first transfer port 121 or from the second transfer port 122. The upper cavity transfer can take into account the conventional transfer method. The lower cavity transfer does not need to be at the process position (such as Figure 2 or Figure 4 The distance between the upper surface of the substrate 600 and the inner surface of the upper wall of the chamber 100 is relatively small. The advantage of this structure is that it can reduce the Reynolds number of the gas flow field, making the gas flow field more stable and easier to control, that is, the controllability and flexibility of the semiconductor manufacturing process will be higher. In addition, the lower chamber transmission also reduces the consumption of precursors accordingly, which has a positive effect on cost reduction control in the production process.

[0052] In one example, the chamber 100 further includes a second chamber flange 130 fixed to the second side of the chamber body 110 , and the second chamber flange 130 has an air outlet 131 .

[0053] refer to Figure 2 or Figure 4 As shown, during the thin film deposition process on the substrate 600, the process gas P1 enters from one side of the chamber 100 (the left side in the figure) and is deposited on the upper surface of the substrate 600, and the gas (exhaust gas) P3 after deposition needs to be discharged in time, so an outlet 131 is provided on the second chamber flange 130 on the other side of the chamber 100 (the right side in the figure) so that the gas P3 after deposition can be discharged in time. In the chamber body 110, a rear heating plate 500 can be provided on one side close to the outlet 131, and during deposition, the rear heating plate 500 can guide the gas after deposition out of the chamber.

[0054] In one example, the semiconductor reaction chamber of this embodiment further includes an inlet channel extending in the inlet flange 200, wherein the first end of the inlet channel is an inlet end for connecting to an upstream gas passage, and the second end of the inlet channel is an outlet end for providing the substrate 600 with gas required for thin film deposition. Further, in the first inlet flange 210, the inlet channel is a first vertical channel 201 that penetrates the entity between the upper surface of the inlet flange 200 and the film transfer port. In the second inlet flange 220, the inlet channel includes a second vertical channel 202 and a transverse channel 203 that pass through the inlet flange 200, wherein the first end of the second vertical channel 202 penetrates the upper surface of the inlet flange 200, the second end of the second vertical channel 202 is connected to the first end of the transverse channel 203, and the second end of the transverse channel 203 is exposed to the first transfer port 121.

[0055] refer to Figure 1 and Figure 2As shown, the situation where only the first vertical channel 201 is used is often in a scenario where the chamber 100 is matched with the first air inlet flange 210, and the film transfer port of the first air inlet flange 210 is connected to the first transfer port 121. The process gas P1 enters the first vertical channel 201 from the upper end of the first vertical channel 201 (shown in the figure at a), and then flows out through the lower end of the first vertical channel 201 (shown in the figure at b). Thereafter, the process gas P1 flows into the film transfer port of the first air inlet flange 210 and then flows to the substrate 600 on which the thin film is to be deposited.

[0056] refer to Figure 3 and Figure 4 As shown, when the chamber 100 matches the second inlet flange 220, the film transfer port of the inlet flange 200 is connected to the second transfer port 122 of the first chamber flange 120, and the first transfer port 121 located above the second transfer port 122 does not correspond to the film transfer port. In this case, the inlet channel includes a second vertical channel 202, and the process gas P1 is introduced from its inlet end (shown at a). It also includes a transverse channel 203. One end of the transverse channel 203 is connected to the outlet end (shown at b) of the second vertical channel 202, and the other end of the transverse channel 203 (shown at c) passes through the second inlet flange 220 to input the process gas P1 into the chamber 100. At the same time, since the process gas P1 flows out in the horizontal direction after flowing into the chamber 100, the flow is smooth, which is also beneficial to the thin film deposition process of the substrate 600.

[0057] In one example, the support member 300 includes a tray support 310, a substrate tray 320, an ejector pin 330, and an ejector pin support 340. The substrate tray 320 is arranged on the tray support 310. For example, a groove is arranged on the bottom surface of the substrate tray 320, and a positioning pin portion is arranged on the tray support 310. When the positioning pin portion extends into the aforementioned groove, the tray support 310 can drive the substrate tray 320 to rotate. The ejector pin 330 is movably arranged on the substrate tray 320. When the ejector pin 330 is supported by the substrate tray 320, the upper surface of the ejector pin 330 is flush with the upper surface of the substrate tray 320 or is located below the upper surface of the substrate tray 320. The top of the ejector pin support 340 has an ejector pin support, and the ejector pin support is used to support the ejector pin 330. The ejector pin support 340 is arranged coaxially with the tray support 310.

[0058] The support member 300 is essential to ensure the smooth progress of the thin film deposition process. Figure 1 As shown, in the upper chamber transmission mode, when the ejector pin 330 is lifted by the ejector pin support 340, the upper surface of the ejector pin 330 is higher than the upper surface of the substrate tray 320. At this time, the substrate 600 is supported by the ejector pin 330 whose upper surface is higher than the substrate tray 320. Figure 2As shown in the figure, when the ejector pin support 340 is lowered, it no longer provides support force for the ejector pin 330. Since the upper end of the ejector pin 330 is wider, the ejector pin 330 will not fall off the substrate tray 320. After the ejector pin 330 is lowered, it is suspended on the substrate tray 320. In this case, since the upper surface of the ejector pin 330 is flush with the upper surface of the substrate tray 320 or is located below the upper surface of the substrate tray 320, the substrate tray 320 supports the substrate 600.

[0059] refer to Figure 3 As shown, in the lower chamber transfer mode, the ejector pin 330 is not supported by the ejector pin bracket 340. One implementation method is that the ejector pin bracket 340 is staggered at a certain angle relative to the ejector pin 330, or the support member 300 without the ejector pin bracket 340 can be directly used, such as removing the ejector pin bracket 340. In this setting, when the substrate 600 is transferred into the semiconductor reaction chamber, the lower end of the ejector pin 330 abuts against the inner surface of the lower wall of the chamber body 110, and the upper surface of the ejector pin 330 is higher than the upper surface of the substrate tray 320. After the substrate 600 is transferred into the semiconductor reaction chamber, the substrate 600 is supported by the ejector pin 330 whose upper surface is higher than the substrate tray 320. Reference Figure 4 As shown, the tray support 310 rises, driving the substrate tray 320 to rise. When the substrate tray 320 rises to a certain height, the substrate tray 320 can provide support for the ejector pins 330 (i.e., the ejector pins 330 are suspended from the substrate tray 320). At this time, since the upper surface of the ejector pins 330 is flush with the upper surface of the substrate tray 320 or is located below the upper surface of the substrate tray 320, the substrate 600 is supported by the substrate tray 320. When the tray support 310 continues to rise, driving the substrate 600 to rise to the process position, the thin film deposition process begins.

[0060] In order to further illustrate the difference in the use of the support member 300 during the upper cavity transmission and the lower cavity transmission, the detailed description is as follows:

[0061] refer to Figure 5 As shown, in the upper chamber transmission mode, the ejector pin support 340 is required to support the ejector pin 330. Figure 6 As shown, in the lower chamber transmission mode, the ejector bracket 340 is staggered at a certain angle α. For example, if the staggered angle α is 0° when the ejector bracket 340 and the tray bracket 310 overlap, when the ejector bracket 340 or the tray bracket 310 rotates 60° and the other bracket remains stationary, the ejector bracket 340 will stagger the ejector 330. Of course, in one embodiment, the support member 300 without the ejector bracket 340 can also be used directly.

[0062] In one example, reference Figure 1As shown, the tray support 310 includes a support shaft 311 and a plurality of support arms 312 , one end of the plurality of support arms 312 is fixed on the support shaft 311 , and the other end of the plurality of support arms 312 is connected to the substrate tray 320 .

[0063] In one example, the projected length of the support arm 312 on the substrate tray 320 is smaller than the distance from the ejector pin 330 to the support shaft 311 .

[0064] refer to Figure 5 As shown, the projected length of the support arm 312 on the substrate tray 320 is shown as the length L1, and the distance from the ejector pin 330 to the support shaft 311 is shown as the length L2. Since L1 is smaller than L2, from the overall structure, the tray bracket 310 is located inside the plurality of ejector pins 330, which facilitates the support of the substrate tray 320 to the substrate 600 and the rotation of the support member 300 during the thin film deposition process.

[0065] In one example, a stopper 400 is further disposed in the chamber body 110, and the stopper 400 is configured to adjust the height of the upper surface of the ejector pin 330, and each stopper 400 is located below its corresponding ejector pin 330. Because the tray support 310 is located inside the ejector support 340, when the support arm 312 is located at a low position, the stopper 400 and the support arm 312 will not interfere with each other, so that the lower chamber height of the semiconductor reaction chamber will not be affected thereby, and the lower chamber height may be further reduced.

[0066] In this embodiment, the function of the stopper 400 is to support the ejector pins 330 when the ejector pins 330 receive the substrate 600 after the substrate tray 320 is lowered. The lower end of the ejector pins 330 contacts the stopper 400, and the upper surface of the ejector pins 330 contacts the substrate 600. The upper surfaces of the three ejector pins 330 on the substrate tray 320 form a contact surface. If the upper surfaces of the three ejector pins 330 are at different heights, the substrate 600 will tilt. In the case of excessive tilt, the substrate 600 will overturn under the action of gravity and friction, causing the substrate 600 to be retained in the semiconductor reaction chamber and unable to be removed or even broken. In the case of a small tilt angle, when the substrate 600 approaches the upper surface of the substrate tray 320, the residual gas at the bottom of the substrate 600 is unevenly discharged along the four sides, causing the substrate 600 to slide away from the center position.

[0067] In order to ensure that the substrate 600 has a good levelness when being received by the ejector pins 330, the thickness of the stopper 400 is made in different sizes, and there is a slight difference in thickness between each type of stopper 400. The stoppers 400 of different thicknesses can be used to adjust the coplanarity of the upper surfaces of multiple ejector pins, so that the ejector pins 330 can receive or support the substrate 600 with a consistent height, thereby ensuring that the substrate 600 will not tilt.

[0068] refer to Figure 3 As shown, in the lower chamber transmission mode, when the ejector support 340 does not exist or is not considered, the stopper 400 can directly cooperate with the ejector 330 to adjust the upper surface height of the ejector 330 so that the ejector 330 has a consistent height when receiving or supporting the substrate 600.

[0069] In one example, the lower wall of the cavity body 110 has a groove 111, and the groove 111 is recessed downward from the upper surface of the lower wall. The groove 111 is set on the flat lower wall, and only cold processing is involved in the processing process, and no hot processing is required. In this way, deformation of the cavity caused by hot processing can be avoided. The stopper 400 includes a lower mounting portion and an upper supporting portion. The lower surface of the mounting portion of the stopper 400 abuts against the bottom of the groove 111, and the supporting portion of the stopper 400 is used to support the ejector pin 330.

[0070] In this embodiment, a groove 111 is provided on the inner surface of the lower wall of the cavity body 110, and a stopper 400 is arranged in the groove 111. In the vertical direction, the stopper 400 cooperates with the ejector pin 330, and the stoppers 400 of different specifications (i.e., different thicknesses) can realize the leveling of the ejector pin 330. For the stopper 400, its mounting portion extends into the groove 111 so that the stopper 400 is supported inside the cavity body 110. The mounting length of the mounting portion below the stopper 400 needs to be equal to or slightly greater than the depth of the groove 111, so as to ensure that the lower surface of the mounting portion of the stopper 400 can smoothly abut against the bottom of the groove 111, thereby enhancing the stability of the stopper 400, and further making the ejector pin 330 more stable when supporting the substrate 600.

[0071] In one example, when the lower surface of the mounting portion of the stopper 400 is in a state of abutting the groove 111, there is a gap between the lower surface of the support portion of the stopper 400 and the inner surface of the lower wall. The cross-sectional area of ​​the mounting portion of the stopper 400 is smaller than the cross-sectional area of ​​the support portion of the stopper 400. The mounting portion of the stopper 400 abuts the groove 111, while the support portion of the stopper 400 does not contact the inner surface of the lower wall, which reduces the parts that require precision machining. In addition, during the installation and removal process of the stopper 400, the gap can provide a better operating space for the installation and removal tools, which is conducive to the smooth installation and removal of the stopper 400. In addition, exemplarily, the height of the gap is 2 mm to 5 mm.

[0072] The semiconductor reaction chamber provided in this embodiment has a first chamber flange 120 of a chamber body 100 having a first transfer port 121 and a second transfer port 122. The first transfer port 121 and the second transfer port 122 are both configured to allow a substrate 600 to pass therethrough, thereby enabling the semiconductor reaction chamber to be compatible with two substrate entry methods, thereby increasing the application scenarios of the semiconductor reaction chamber.

[0073] An embodiment of the present invention provides a method for using a semiconductor reaction chamber, which can be applied to the semiconductor reaction chamber shown in the above embodiment. Figure 7 As shown, the method 700 includes:

[0074] S710, select the first air inlet flange 210; S720, the robot is configured to transfer the substrate 600 into the semiconductor reaction chamber from the film transfer port of the first air inlet flange 210 and the first transfer port 121 of the cavity 100; S730, the ejector bracket 340 rises to support the substrate 600 on the upper surface of the ejector 330; S740, the robot withdraws from the semiconductor reaction chamber; S750, the ejector bracket 340 descends to allow the substrate 600 to fall on the substrate tray 320.

[0075] For the case where the first inlet flange 210 is selected, there is another way of using it, see Figure 8 As shown, the method 800 includes: S810, selecting the first air inlet flange 210; S820, the robot is configured to transfer the substrate 600 into the semiconductor reaction chamber from the film transfer port of the first air inlet flange 210 and the first transfer port 121 of the cavity 100, and drop the substrate 600 onto the upper surface of the ejector pin 330 (the ejector pin 330 has risen to a certain height with the ejector pin support 340); S830, the robot withdraws from the semiconductor reaction chamber; S840, the ejector pin support 340 descends, so that the substrate 600 falls on the substrate tray 320.

[0076] In this embodiment, reference Figure 2 As shown, the process position (position A) is the position of thin film deposition. When the substrate 600 is transferred in the upper chamber, the substrate 600 is transferred into the semiconductor reaction chamber at the first transfer port 121. After entering the semiconductor reaction chamber, the substrate 600 can be dropped onto the upper surface of the ejector pin 330 by a robot, or the ejector pin 330 can actively support the substrate 600.

[0077] One embodiment of the present invention provides another method for using a semiconductor reaction chamber, which can be applied to the semiconductor reaction chamber shown in the above embodiment. Fig. 9 As shown, method 900 includes:

[0078] S910, select the second air inlet flange 220; S920, rotate the ejector bracket 340 so that the ejector bracket 340 is offset from the ejector pin 330; S930, the robot is configured to transfer the substrate 600 into the semiconductor reaction chamber from the second transfer port 122 of the semiconductor reaction chamber, and drop the substrate 600 onto the upper surface of the ejector pin 330; S940, the robot exits the semiconductor reaction chamber; S950, the tray bracket 310 drives the substrate tray 320 to rise to the process position, and the process position is the position where the substrate 600 is subjected to thin film deposition.

[0079] In this embodiment, reference Figure 4 As shown, the process position (position A) is the position of thin film deposition. When the substrate 600 is transferred in the lower chamber, the substrate 600 is transferred into the semiconductor reaction chamber through the second transfer port 122. Since the ejector pins 330 cannot actively support the substrate 600, a robot is required to drop the substrate 600 onto the upper surface of the ejector pins 330.

[0080] The method for using the semiconductor reaction chamber provided in this embodiment can be applied to the aforementioned semiconductor reaction chamber, wherein the first chamber flange 120 of the chamber body 100 has a first transfer port 121 and a second transfer port 122, and the first transfer port 121 and the second transfer port 122 are both configured to allow the substrate 600 to pass therethrough, thereby enabling upper chamber transfer as well as lower chamber transfer. The semiconductor reaction chamber is compatible with two substrate entry methods, thereby increasing the application scenarios of the semiconductor reaction chamber.

[0081] The basic concepts have been described above. Obviously, for those skilled in the art, the above invention disclosure is only used as an example and does not constitute a limitation of the present application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements and amendments to the present application. Such modifications, improvements and amendments are suggested in the present application, so such modifications, improvements and amendments still belong to the spirit and scope of the exemplary embodiments of the present application.

[0082] It should be noted that in order to simplify the description of the disclosure of this application and thus help understand one or more embodiments of the invention, in the above description of the embodiments of this application, multiple features are sometimes combined into one embodiment, figure or description thereof. However, this disclosure method does not mean that the features required by the object of this application are more than the features mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.

[0083] Although the present application has been described with reference to the current specific embodiments, ordinary technicians in this technical field should recognize that the above embodiments are only used to illustrate the present application, and various equivalent changes or substitutions may be made without departing from the spirit of the present application. Therefore, as long as the changes and modifications to the above embodiments are within the essential spirit of the present application, they will fall within the scope of the claims of the present application.

Claims

1. A semiconductor reaction chamber, characterized in that: include: A chamber, the chamber comprising a chamber body and a first chamber flange fixed to a first side of the chamber body, the first chamber flange having a first transfer port and a second transfer port, the first transfer port and the second transfer port are both configured to allow a substrate to pass therethrough, and the first transfer port is located higher than the second transfer port; an air inlet flange, the air inlet flange being located on a side of the first chamber flange away from the chamber body, the air inlet flange being configured as a first type of air inlet flange or a second type of air inlet flange, the film transmission port of the first type of air inlet flange being connected to the first transmission port, and the film transmission port of the second type of air inlet flange being connected to the second transmission port; and A support member, wherein the support member is partially located in the cavity body and is used to support the substrate.

2. The semiconductor reaction chamber according to claim 1, characterized in that: The cavity further comprises a second chamber flange fixed to the second side of the cavity body, and the second chamber flange is provided with an air outlet.

3. The semiconductor reaction chamber according to claim 1, wherein: It also includes an air inlet channel extending in the air inlet flange, wherein the first end of the air inlet channel is an air inlet end for connecting to an upstream gas passage, and the second end of the air inlet channel is an air outlet end for providing the substrate with gas required for thin film deposition.

4. The semiconductor reaction chamber according to claim 3, characterized in that: In the first type of air inlet flange, the air inlet passage is a first vertical passage that penetrates a solid body between the upper surface of the air inlet flange and the film transmission port.

5. The semiconductor reaction chamber according to claim 3, characterized in that: In the second type of air inlet flange, the air inlet channel includes a second vertical channel and a transverse channel passing through the air inlet flange, wherein the first end of the second vertical channel passes through the upper surface of the air inlet flange, the second end of the second vertical channel is connected to the first end of the transverse channel, and the second end of the transverse channel is exposed to the first transmission port.

6. The semiconductor reaction chamber according to claim 1, wherein: The support member includes a tray support, a substrate tray, an ejector pin and an ejector pin support; The substrate tray is arranged on the tray support; The ejector pin is movably arranged on the substrate tray, and when the ejector pin is supported by the substrate tray, the upper surface of the ejector pin is flush with the upper surface of the substrate tray or is located below the upper surface of the substrate tray; The top end of the ejector bracket is provided with an ejector support, and the ejector support is used to support the ejector; the ejector bracket is coaxially arranged with the tray bracket.

7. The semiconductor reaction chamber according to claim 6, wherein: The tray bracket includes a support shaft and a plurality of support arms; one end of the plurality of support arms is fixed to the support shaft, and the other end of the plurality of support arms is fixed to the substrate tray, and the projection length of the support arm on the substrate tray is smaller than the distance from the ejector pin to the support shaft.

8. The semiconductor reaction chamber according to claim 6, wherein: A stopper is also provided in the cavity body, and the stopper is configured to adjust the height of the upper surface of the ejector pin; each of the stoppers is located below the corresponding ejector pin.

9. The semiconductor reaction chamber according to claim 8, characterized in that: The lower wall of the cavity body has a groove, which is recessed downward from the upper surface of the lower wall. The stopper includes a lower mounting portion and an upper supporting portion. The lower surface of the mounting portion of the stopper abuts against the bottom of the groove, and the supporting portion of the stopper is used to support the ejector pin.

10. The semiconductor reaction chamber according to claim 9, wherein: When the lower surface of the mounting portion of the stopper is in contact with the groove, a gap is provided between the lower surface of the supporting portion of the stopper and the lower wall.

11. A method for using a semiconductor reaction chamber, characterized in that: A semiconductor reaction chamber as claimed in any one of claims 6 to 10, comprising: Select the first type of air inlet flange; The robot is configured to transfer the substrate into the semiconductor reaction chamber from the film transfer port of the first inlet flange and the first transfer port of the chamber; The ejector pin support rises to support the substrate on the upper surface of the ejector pin; The robot arm exits the semiconductor reaction chamber; The ejector support is lowered to allow the substrate to fall onto the substrate tray.

12. A method for using a semiconductor reaction chamber, characterized in that: A semiconductor reaction chamber as claimed in any one of claims 6 to 10, comprising: Select the second type of air inlet flange; Rotate the ejector bracket to make the ejector bracket staggered from the ejector; The robot is configured to transfer the substrate into the semiconductor reaction chamber from the second transfer port of the semiconductor reaction chamber, and drop the substrate onto the upper surface of the ejector pin; The robot arm exits the semiconductor reaction chamber; The tray support drives the substrate tray to rise to a process position, where the process position is a position where thin film deposition is performed on the substrate.

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