Reflector, semiconductor processing system and method of depositing material layer

Abstract

A reflector includes a reflector body having a slotted surface, a planar surface, and an ellipsoidal surface. The planar surface is opposite the slotted surface and is separated from the slotted surface by a thickness of the reflector body. The ellipsoidal surface is offset from the planar surface, opposite the slotted surface, and separated from the slotted surface by a thickness of the reflector body, and spans the slotted surface of the reflector body. The ellipsoidal surface defines an ellipsoidal profile orthogonal to the planar surface to concentrate heat flux at a distal focus of the ellipsoidal profile using electromagnetic radiation reflected by the ellipsoidal surface of the reflector body. Semiconductor processing systems and material layer deposition methods are also described.

Description

Technical Field

[0001] The present disclosure relates generally to fabricating semiconductor devices. More particularly, the present disclosure relates to heating a substrate during deposition of a material layer on the substrate for fabricating a semiconductor device. Background Art

[0002] Semiconductor devices such as solar cells and integrated circuit semiconductor devices are typically manufactured by depositing layers of material on a substrate. Material layer deposition is typically accomplished by supporting the substrate within a reaction chamber, heating the substrate to a desired material layer deposition temperature, and exposing the substrate to one or more material layer precursors under selected environmental conditions to deposit the material layer onto the substrate. Substrate heating can be accomplished using a radiant heating device, which typically uses a radiant heat source in conjunction with a reflector, such as a lamp supported outside the reaction chamber, to transmit radiant energy through the walls of the reaction chamber to heat the substrate supported within the reaction chamber. Once the material layer reaches the desired thickness, the precursor flow and heating are typically stopped, and further processing of the substrate continues to be suitable for the semiconductor device being manufactured.

[0003] In some material layer deposition processes, cross-substrate variations in the material layer deposited onto the substrate may affect the properties of the material layer, potentially affecting the performance of a semiconductor device formed using the material layer. For example, cross-substrate variations in the thickness of the material layer may result in corresponding cross-substrate variations in the electrical properties of the material layer deposited onto the substrate, potentially affecting the reliability of a semiconductor device formed using the material layer. Cross-substrate variations in the concentration of alloy components such as germanium and dopants may also cause variations in the electrical properties of the material layer deposited onto the substrate, also potentially affecting the reliability of a semiconductor device formed using the substrate. In some deposition processes, the material layer may curl up or down, causing the substrate edge, the material layer, or the component concentration to increase or decrease at the substrate edge, respectively, during these processes.

[0004] Various countermeasures exist to limit material layer variations across the substrate. For example, the substrate can be rotated relative to the material layer flow provided to the substrate to limit material layer variations across the substrate. The mass flow rate of the precursor can be locally increased or decreased at the edge relative to the center of the substrate to compensate for variations in the material layer between the center and the edge of the substrate, which are otherwise characteristic of the deposition process. And substrate heating can be varied between the center and the edge of the substrate, such as by varying the radiant energy produced by a radiant heat source covering the edge of the substrate relative to a radiant heat source lamp covering the center of the substrate, also compensating for variations in the material layer, which are otherwise characteristic of the deposition process. While generally satisfactory, this technique may not be sufficient to compensate for material layer variations across the substrate in some deposition processes.

[0005] Such systems and methods are generally acceptable for their intended purposes. However, there remains a need for improved reflectors, semiconductor processing systems having reflectors, and methods of depositing a material layer onto a substrate in a reaction chamber apparatus using a reflector. The present disclosure provides a solution to this need. Summary of the invention

[0006] A reflector is provided. The reflector includes a reflector body having a grooved surface, a planar surface, and an ellipsoidal surface. The planar surface is opposite to the grooved surface and is separated from the grooved surface by the thickness of the reflector body. The ellipsoidal surface is offset from the planar surface, opposite to the grooved surface, is separated from the grooved surface by the thickness of the reflector body, and spans the grooved surface of the reflector body. The ellipsoidal surface defines an elliptical profile orthogonal to the planar surface to concentrate heat flux at a far focus of the elliptical profile using electromagnetic radiation reflected by the ellipsoidal surface of the reflector body.

[0007] In addition to one or more of the above features, or as an alternative, further examples of the reflector may include the ellipsoidal surface being a first ellipsoidal surface, and the reflector body having a second ellipsoidal surface. The second ellipsoidal surface may be separated from the grooved surface by the thickness of the reflector body. The second ellipsoidal surface may extend parallel to the first ellipsoidal surface and be separated from the first ellipsoidal surface by a planar surface.

[0008] In addition to one or more of the above features, or as an alternative, further examples of reflectors may include a reflector body having a parabolic surface. The parabolic surface may define a parabolic profile. The parabolic profile may be orthogonal to the planar surface. The parabolic surface may extend parallel to the ellipsoidal surface of the reflector body.

[0009] In addition to or as an alternative to one or more of the features described above, further examples of reflectors can include an ellipsoidal surface separating a parabolic surface of the reflector body from a planar surface of the reflector body.

[0010] In addition to or as an alternative to one or more of the features described above, further examples of reflectors can include a parabolic surface of the reflector body separated from an ellipsoidal surface of the reflector body by a planar surface of the reflector body.

[0011] In addition to one or more of the above features, or as an alternative, further examples of the reflector may include a reflector body having a partial cylindrical surface. The partial cylindrical surface may define a partial circular profile. The partial circular profile may be orthogonal to the planar surface. The partial cylindrical surface may extend parallel to the ellipsoidal surface of the reflector body.

[0012] In addition to or as an alternative to one or more of the features described above, further examples of reflectors can include a partial cylindrical surface of the reflector body separating an ellipsoidal surface of the reflector body from a planar surface of the reflector body.

[0013] In addition to or as an alternative to one or more of the features described above, further examples of reflectors may include a partially cylindrical surface of the reflector body separated from an ellipsoidal surface by a planar surface of the reflector body.

[0014] In addition to one or more of the above features, or as an alternative, further examples of the reflector may include that the reflector body has an inner rib. The inner rib may separate the planar surface of the reflector body from the ellipsoidal surface of the reflector body. The inner rib may have a partial cylindrical surface. The partial cylindrical surface may define a partial circular profile that is orthogonal to the planar surface and faces the planar surface of the reflector body.

[0015] In addition to one or more of the above features, or as an alternative, further examples of the reflector may include a reflector body having an intermediate rib. The intermediate rib may be separated from the planar surface by an ellipsoidal surface of the reflector body. The intermediate rib may have a parabolic surface defining a parabolic profile. The parabolic profile may be orthogonal relative to the planar surface of the reflector body.

[0016] In addition to one or more of the above features, or as an alternative, a further example of a reflector may include a reflector body having an outer rib. The outer rib may be separated from the planar surface by an ellipsoidal surface of the reflector body. The outer rib may have a parabolic surface and an edge surface, the parabolic surface defining a parabolic profile orthogonal to the planar surface, and the edge surface orthogonal to the planar surface.

[0017] In addition to or as an alternative to one or more of the features described above, further examples of the reflector may include the reflector body being formed of a bulk metal material. The gold coating material may be conformally deposited onto the planar surface and the ellipsoidal surface of the reflector body.

[0018] In addition to or in lieu of one or more of the above features, further examples of the reflector may include a grooved surface defining a plurality of grooves therein. The plurality of grooves may extend parallel to the ellipsoidal surface of the reflector body. The plurality of grooves may fluidly couple the grooved surface with the planar surface and the ellipsoidal surface of the reflector body. The thickness of the reflector body may define a coolant channel therein. The coolant channel may extend between the grooved surface and the ellipsoidal surface of the reflector body.

[0019] In addition to or as an alternative to one or more of the above features, further examples of the reflector may include that the reflector body may have an integral arrangement, or the reflector body may have a segmented arrangement including a first body segment and at least one second body segment. The planar surface may be defined on the first body segment, the ellipsoidal surface may be defined on the at least one second body segment, and the second body segment abuts the first body segment at a joint across the reflector body.

[0020] A semiconductor processing system is provided. The semiconductor processing system includes a chamber body formed of a transmissive material, a substrate support disposed within the chamber body, and a reflector supported above the chamber body as described above. A lamp array including two or more linear lamps is supported between the reflector and the chamber body, a first of the two or more linear lamps extending along a near focus of an elliptical profile defined by an ellipsoidal surface of the reflector body, and a second of the two or more linear lamps separating a planar surface of the reflector body from the chamber body and parallel to the first of the two or more linear lamps.

[0021] In addition to or in lieu of one or more of the features described above, further examples of semiconductor processing systems can include a far focus of an elliptical profile defined by the ellipsoidal surface intersecting a surface of a substrate positioned on a substrate support.

[0022] In addition to or in lieu of one or more of the features described above, further examples of semiconductor processing systems can include a chamber body having two or more external ribs. The two or more external ribs can extend parallel to the ellipsoidal surface of the reflector body. At least one of the two or more linear lamps can cover one of the plurality of external ribs.

[0023] In addition to or as an alternative to one or more of the features described above, further examples of semiconductor processing systems can include a chamber body having two or more external ribs. The external ribs can extend parallel to the ellipsoidal surface. A first of the two or more linear lamps can be arranged between the two external ribs.

[0024] In addition to or in lieu of one or more of the features described above, further examples of the system can include the substrate support being supported within the chamber body for rotation about the rotation axis. The near focus and the far focus can be offset from the rotation axis by between about 135 mm and about 155 mm.

[0025] A material layer deposition method is provided. The material layer deposition method includes: at a semiconductor processing system including a reflector as described above, positioning a substrate at a far focus of an elliptical profile of a reflector body; heating the substrate using electromagnetic radiation emitted by a lamp supported at a near focus of the elliptical profile of the reflector body; and further heating the substrate by reflecting electromagnetic radiation emitted in a direction opposite to the substrate toward the far focus using an ellipsoidal surface of the reflector body. A silicon-containing material layer is deposited onto the substrate using an epitaxial deposition technique, the ellipsoidal surface using electromagnetic radiation reflected by the ellipsoidal surface to concentrate heat flux at the far focus of the elliptical profile, the heat flux concentrated at the far focus of the elliptical profile limiting cross-substrate variations within the silicon-containing material layer deposited onto the substrate using the epitaxial deposition technique.

[0026] The present invention summary is provided to introduce some concepts in a simplified form. These concepts are further described in detail in the detailed description of the examples of the following disclosure. The present invention summary is not intended to identify the key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] These and other features, aspects and advantages of the present invention disclosed herein are described below with reference to the accompanying drawings of certain embodiments, which are intended to illustrate rather than to limit the present invention.

[0028] Figure 1 is a schematic diagram of a semiconductor processing system including a reflector according to the present disclosure, showing the reflector transferring radiant energy generated by a lamp to a substrate located within the semiconductor processing system;

[0029] Figure 2 According to the example of the present disclosure Figure 1 A schematic diagram of a semiconductor processing system showing providing a silicon-containing precursor to a substrate while heating the substrate using reflected radiant energy;

[0030] Figure 3 According to the example of the present disclosure Figure 1 A schematic diagram of a semiconductor processing system showing a reflective surface of a reflector distributing radiant energy on a substrate according to a shape of the reflective surface;

[0031] Figure 4 According to the example of the present disclosure Figure 1 A perspective view of a reflector of , showing a grooved surface and an opposing contoured surface of the reflector for distributing radiant energy across a substrate within a semiconductor processing system;

[0032] Figure 5 According to the example of the present disclosure Figure 1A top view of a reflector showing a grooved surface of the reflector and a plurality of grooves defined within the grooved surface of the reflector;

[0033] Figure 6 According to the example of the present disclosure Figure 1 A bottom view of a reflector of , showing an ellipsoidal surface separated from a planar surface by a partial cylindrical surface, and an ellipsoidal surface separating a parabolic surface of the reflector from a planar surface of the reflector;

[0034] Figure 7 According to the example of the present disclosure Figure 1 A side view of a portion of a reflector and chamber arrangement of , showing the illumination distribution produced by electromagnetic radiation reflected by the ellipsoidal surface and the planar surface of the reflector body;

[0035] Figure 8 According to the example of the present disclosure Figure 1 a partial view of a chamber arrangement and a reflector showing a parabolic surface and a parabolic surface illumination distribution generated by the parabolic surface using electromagnetic radiation reflected from the parabolic surface of the reflector;

[0036] Fig. 9 According to the example of the present disclosure Figure 1 A partial view of a chamber arrangement and a reflector showing the ellipsoidal surface of the reflector and the ellipsoidal surface illumination distribution produced by the ellipsoidal surface;

[0037] Fig.10 and Fig.11 According to the example of the present disclosure Figure 1 A partial view of a chamber arrangement and a reflector showing partial cylindrical and planar surfaces and associated partial cylindrical and planar surface illumination distributions, respectively;

[0038] Fig.12 is a graph of substrate edge temperature variation in response to power applied to a lamp overlying the substrate edge, illustrating greater temperature tunability in a chamber arrangement including a reflector having an ellipsoidal surface overlying the substrate edge; and

[0039] Fig.13 is a process flow diagram of a method of depositing a material layer onto a substrate according to examples of the present disclosure, showing the operations of the method according to illustrative and non-limiting examples of the present disclosure.

[0040] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the relative sizes of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION

[0041] Reference will now be made to the drawings, wherein like reference numerals represent similar structural features or aspects of the subject disclosure. For purposes of explanation and illustration, and not limitation, a partial view of a reflector included in a semiconductor processing system according to the present disclosure is shown in FIG. Figure 1 , and is generally indicated by the reference numeral 200. Figure 2-13 Other examples of reflectors, semiconductor processing systems with reflectors, and methods of depositing material layers using reflectors, or aspects thereof, are provided in accordance with the present disclosure, as will be described. The systems and methods of the present invention may be used to deposit material layers onto substrates, such as during the manufacture of semiconductor devices such as logic and memory semiconductor devices, although the present invention is generally not limited to a particular type of material layer for any particular type of semiconductor device.

[0042] refer to Figure 1 , a semiconductor processing system 100 is shown. The semiconductor processing system 100 includes a precursor delivery device 102, a chamber device 104 including a reflector 200, an exhaust source 106, and a controller 108. The precursor delivery device 102 is connected to the chamber device 104 through a precursor supply conduit 110, and is configured to provide a flow of one or more material layer precursors 10 to the chamber device 104. The chamber device 104 is configured to support the substrate 2 during the deposition of the material layer 4 onto the upper surface 6 of the substrate 2 using the material layer precursor 10. The exhaust source 106 is connected to the chamber device 104 through an exhaust conduit 112, fluidly connects the chamber device 104 to the external environment 12 outside the semiconductor processing system 100, and is configured to convey the flow of residual precursors and / or reaction products 14 emitted by the chamber device 104 to the external environment 12, for example, using a vacuum pump and / or an abatement device. The controller 108 is operably connected to the precursor delivery device 102 and the chamber device 104 via a wired or wireless link 114, the chamber device 104, and responds to instructions recorded on a non-transitory machine-readable medium to use the material layer deposition method 300 (eg, Fig.13 A material layer 4 is deposited onto the substrate 2 as will be described.

[0043] As used herein, the term "substrate" may refer to any one or more underlying materials, including any one or more underlying materials that may be modified or on which a device, circuit, or film may be formed. The substrate may be continuous or non-continuous; rigid or flexible; solid or porous; and combinations thereof. The substrate may be in any form, such as (but not limited to) a powder, a plate, or a workpiece. Plate-like substrates may include wafers of various shapes and sizes, including, for example, 300 mm wafers.

[0044] The substrate may be formed of a semiconductor material, including, for example, silicon (Si), silicon germanium (SiGe), silicon oxide (SiO2), gallium arsenide (GaAs), gallium nitride (GaN), and silicon carbide (SiC). The substrate may include a pattern or may be a blanket substrate without a pattern. For example, a substrate in powder form may be used in drug manufacturing. The porous substrate may include one or more polymers. Examples of workpieces may include medical devices (e.g., stents and syringes), jewelry, tool equipment, components for battery manufacturing (e.g., anodes, cathodes, or separators), or components of photovoltaic cells, etc.

[0045] The continuous substrate can extend beyond the boundaries of the treatment chamber where the deposition process occurs. In some processes, the continuous substrate can be moved through the treatment chamber so that the process continues until the end of the substrate is reached. The continuous substrate can be supplied from a continuous substrate feed system to allow the continuous substrate to be manufactured and output in any suitable form. The non-limiting example of a continuous substrate may include a sheet, a nonwoven film, a roll, a foil, a net, a flexible material, a continuous filament or a fiber bundle (e.g., a ceramic fiber or a polymer fiber). The continuous substrate may also include a carrier or sheet on which one or more non-continuous substrates are mounted.

[0046] Reference Figure 2 , a precursor delivery device 102 according to an example of the present disclosure is shown. In the example shown, the precursor delivery device 102 includes a first precursor source 116, a second precursor source 118, a third precursor source 120, a carrier gas / purge fluid source 122, and an etchant source 124. In some examples, the precursor delivery device 102 can be as shown and described in U.S. Patent No. 11,053,591 to Ma et al., published on July 6, 2021, the contents of which are incorporated herein by reference in their entirety. Although shown and described herein as having a particular arrangement, it should be understood and appreciated that in other examples of the present disclosure, the precursor delivery device 102 can have a different arrangement and still be within the scope of the present disclosure.

[0047] The first precursor source 116 is connected to the chamber device 104 through the first precursor supply valve 126, and includes a silicon-containing material layer precursor 16. The first precursor source 116 is also configured to provide a flow of the silicon-containing material layer precursor 16 to the chamber device 104 using the first precursor supply valve 126. The first precursor supply valve 126 is in turn operably associated with the controller 108 and may include a mass flow controller (MFC) device. It is contemplated that the silicon-containing material layer precursor 16 may include one or more of a halogenated silicon-containing precursor and / or a non-halogenated silicon-containing precursor. Examples of suitable halogenated silicon-containing precursors include dichlorosilane (H2SiCl2) and trichlorosilane (HCl3Si). Examples of suitable non-halogenated silicon-containing precursors include silane (SiH4) and disilane (Si2H6).

[0048] The second precursor source 118 is similar to the first precursor source 116 and is also connected to the chamber arrangement 104 through a second precursor supply valve 128. It is contemplated that the second precursor source 118 includes a germanium-containing precursor 18, and the second precursor source 118 is further configured to provide a flow of the germanium-containing precursor 18 to the chamber arrangement 104 using the second precursor supply valve 128. The second precursor supply valve 128 can be operably associated with the controller 108, including the MFC device, and configured to control the mass flow of the germanium-containing precursor 18 to the chamber arrangement 104. Examples of suitable germanium-containing precursors include germanium (GeH4) and digermane (Ge2H6).

[0049] The third precursor source 120 is also similar to the first precursor source 116 and is also connected to the chamber apparatus 104 through a third precursor supply valve 130. It is contemplated that the third precursor source 120 includes a dopant-containing precursor 20 and is configured to provide a flow of the dopant-containing precursor 20 to the chamber apparatus 104 using the third precursor supply valve 130. The third precursor supply valve 130 can in turn be operably associated with the controller 108, including an MFC device, and configured to control the mass flow of the germanium-containing precursor 18 to the chamber apparatus 104. In some examples, the dopant-containing precursor 20 can include a p-type dopant, such as phosphorus (P) and / or arsenic (As). According to some examples, the dopant-containing precursor 20 can include an n-type dopant, such as boron (B) and / or gallium (Ga), and still be within the scope of the present disclosure.

[0050] The carrier gas / purge fluid source 122 is also similar to the first precursor source 116 and is also connected to the chamber device 104 through the carrier gas / purge fluid supply valve 132. It is conceivable that the carrier gas / purge fluid source 122 includes the carrier gas / purge fluid 22 and is configured to provide a flow of the carrier gas / purge fluid 22 to the chamber device 104 using the carrier gas / purge fluid supply valve 132. The carrier gas / purge fluid supply valve 132 is in turn operably associated with the controller 108, including an MFC device, and is further configured to control the mass flow rate of the carrier gas / purge fluid 22 to the chamber device 104. In some examples, the carrier gas / purge fluid 22 may include an inert gas, such as nitrogen (N2). According to some examples, the carrier gas / purge fluid 22 may include a rare gas, such as argon (Ar) and / or helium (He). It is also conceivable that the carrier gas / purge fluid 22 may include hydrogen (H2) and is still within the scope of the present disclosure.

[0051] Etchant source 124 is also similar to first precursor source 116, and is also connected to chamber device 104 by etchant supply valve 134. It is conceivable that etchant source 124 includes etchant fluid 24, and is configured to use etchant supply valve 134 to provide the flow of etchant fluid 24 to chamber device 104. Etchant supply valve 134 is operably associated with controller 108, includes MFC device, and is configured to control the mass flow rate of etchant fluid 24 to chamber device 104. In some examples, etchant fluid 24 can include halogen, such as chlorine (Cl) or fluorine (F). Examples of suitable etchant fluids include chlorine (Cl2), hydrochloric acid (HCl), fluorine (F2) and hydrofluoric acid (HF).

[0052] refer to Figure 3 , according to an example of the present disclosure, a chamber device 104 and a controller 108 are shown. In the illustrated example, the chamber device 104 has a single wafer crossflow device and includes a chamber body 136, an injection flange 138, and an exhaust flange 140. The chamber device 104 also includes an upper heater element array 142, a lower heater element array 144, a lifting and rotation module 146, a separator 148, a substrate support 150, a support member 152, and an axis member 154. In some examples, the chamber device 104 can be as shown and described in U.S. Patent Application Publication No. 2018 / 0363139A1 filed by Rajavelu et al. on April 25, 2018, the contents of which are incorporated herein by reference in their entirety. Although shown and described herein as having a specific arrangement, it should be understood and appreciated that in other examples of the present disclosure, the chamber device 104 can have a different arrangement (e.g., including additional elements and / or excluding certain elements shown and described herein) and still be within the scope of the present disclosure.

[0053] The chamber body 136 is formed of a transparent material 156, has an injection end 158 and a longitudinally opposed discharge end 160, and has a plurality of external ribs 162 extending transversely around the exterior of the chamber body 136 and longitudinally spaced apart from each other between the injection end 158 and the discharge end 160 of the chamber body 136. The injection flange 138 is adjacent to the injection end 158 of the chamber body 136 and couples the precursor delivery device 102 ( Figure 1 The exhaust flange 140 is adjacent to the exhaust end 160 of the chamber body 136, is fluidly coupled to the injection flange 138 through the interior 164 of the chamber body 136, and couples the chamber body 136 to the exhaust source 106 (e.g., Figure 1164 ). It is contemplated that the divider 148 is fixed within the interior 164 of the chamber body 136, and that the divider 148 divides the interior 164 of the chamber body 136 into an upper chamber 166 and a lower chamber 168. It is also contemplated that the divider 148 has a divider hole 170 extending therethrough, and that the divider 148 is formed of an opaque material 172. In some examples, the transparent material 156 forming the chamber body 136 may be transparent to electromagnetic radiation in the infrared band, such as quartz or sapphire. According to some examples, the opaque material 172 forming the divider 148 may be opaque to electromagnetic radiation in the infrared band, such as, for example, silicon carbide, as a non-limiting example.

[0054] The substrate support 150 is disposed within the interior 164 of the chamber body 136 and is supported to rotate R about an axis of rotation 174. In this regard, it is contemplated that the substrate support 150 is disposed within the divider aperture 170 and is coupled to the lift and rotate module 146 via the support member 152 and the shaft member 154. The support member 152 is, in turn, disposed within the lower chamber 168 of the chamber body 136 along the axis of rotation 174 and is rotationally fixed relative to the substrate support 150. The shaft member 154 is rotationally fixed relative to the support member 152, extends through the lower chamber 168 of the chamber body 136 and a lower wall of the chamber body 136, and is coupled to the lift and rotate module 146 to rotate the substrate support 150 about the axis of rotation 174. It is contemplated that the support member 152 and / or the shaft member 154 are formed of a transparent material, such as the transparent material 156. It is also contemplated that the substrate support 150 is configured to provide edgewise support to the substrate 2, such that an interior region of the substrate is spaced from the substrate support 150, while a peripheral region of the substrate 2 abuts the substrate support 150. Examples of suitable substrate supports include those shown and described in U.S. Patent Application Publication No. 2022 / 0352006A1, filed April 27, 2022, by Huang et al., the contents of which are incorporated herein by reference in their entirety.

[0055] The lower heater element array 144 is supported below the chamber body 136 and is configured to transmit electromagnetic radiation in the infrared band into the interior 164 of the chamber body 136 to heat the substrate 2 during deposition of the material layer 4 onto the substrate 2. In this regard, it is contemplated that the lower heater element array 144 includes a plurality of linear heater elements, such as linear filament-type linear lamps, each supported below the chamber body 136 and laterally spaced from each other below the chamber body 136, with each of the linear heater elements of the lower heater element array 144 extending longitudinally between the injection end 158 and the discharge end 160 of the chamber body 136.

[0056] The upper heater element array 142 is supported above the chamber body 136, configured to transmit electromagnetic radiation in the infrared band into the interior 164 of the chamber body 136 to heat the substrate 2 during deposition of the material layer 4 onto the substrate 2, and can include a plurality of filament-type lamps, such as linear filament-type lamps. In this regard, the plurality of linear filament-type lamps can extend laterally across the upper surface of the chamber body 136 and be longitudinally spaced apart from each other between the injection end 158 and the discharge end 160 of the chamber body 136. It is also contemplated that the reflector 200 is supported above the chamber body 136, the upper heater element array 142 separates the reflector 200 from the chamber body 136, and the pyrometer 176 is supported above the upper heater element array 142, optically coupled to the interior 164 of the chamber body 136 along the optical axis 178, and configured to provide a temperature measurement indicative of the temperature of the substrate 2 supported within the interior 164 of the chamber body 136 to the controller 108.

[0057] Likewise Figure 3 As shown, the controller 108 includes a device interface 180, a processor 182, a user interface 184, and a memory 186. The device interface 180 connects the processor 182 to the wired or wireless link 114 and, through it, to the precursor delivery device 102 ( Figure 1 ), chamber device 104 and exhaust source 106 ( Figure 1 The processor 182 is operably connected to the user interface 184 to provide user output thereto and / or receive user input therefrom, and is arranged to communicate with the memory 186. The memory 186 includes a non-transitory machine-readable medium having a plurality of program modules 188 recorded thereon, which, when read by the processor 182, cause the processor 182 to perform certain operations. Among these operations are the operations of the material layer deposition method 300, as will be described. Although shown and described herein as having a particular arrangement, it should be understood and appreciated that in other examples, the controller 108 may have a different arrangement (e.g., a distributed computing architecture) and still be within the scope of the present disclosure.

[0058] In the example shown, the substrate 2 has a radially inner inner surface portion 8 (eg Figure 7 As shown), the radial outer peripheral surface portion 3 (as Figure 7 shown) and slope 5 (as shown Figure 7174). When positioned on the substrate support 150, the rotation axis 174 intersects the radially inner inner surface portion 8 of the substrate 2, and the radially inner inner surface portion 8 extends circumferentially around the rotation axis 174. The radially outer peripheral surface portion 3 extends around the radially inner inner surface portion 8 and is substantially annular. The bevel 5 extends circumferentially around the radially outer surface portion 3, is separated from the radially inner inner surface portion 8 by the radially outer peripheral surface portion 3, and when the substrate 2 is positioned on the substrate support 150, the bevel 5 supports the substrate 2 on the substrate support 150 in an edge-supporting manner. In some examples, the radially inner inner surface portion 8 may extend between about 120 mm and about 140 mm from the rotation axis 174, for example, about 135 mm from the rotation axis 174. According to some examples, the radially outer peripheral surface portion 3 may extend between about 120 mm and about 150 mm from the rotation axis 174, for example, between about 135 mm and about 149 mm from the rotation axis 174. The bevel 5 may have a radial width between about 1 mm and about 3 mm, and in some examples of the present disclosure may have a radial width of about 1 mm. It is also contemplated that, according to some examples, the substrate 2 may include a pattern 7 (e.g. Figure 7 shown), and still within the scope of the present disclosure.

[0059] refer to Figure 4 and Figure 8-11 , the reflector 200 is shown in a perspective view. The reflector 200 generally includes a reflector body 202 having a grooved surface 204, a planar surface 206 separated from the grooved surface 204 by a thickness 208 of the reflector body 202, and an ellipsoidal surface 210 also separated from the grooved surface 204 by the thickness 208 of the reflector body 202 and further longitudinally spaced from the planar surface 206 of the reflector body 202. The grooved surface 204 defines a plurality of grooves 212 therein. The plurality of grooves 212 each extend through the thickness 208 of the reflector body 202 and fluidly couple the grooved surface 204 of the reflector body 202 to the planar surface 206 and the ellipsoidal surface 210 of the reflector body 202. It is contemplated that one or more of the plurality of slots 212 fluidly couples the slotted surface 204 to the ellipsoidal surface 210 of the reflector body 202, and one or more of the plurality of slots 212 fluidly couples the slotted surface 204 of the reflector body 202 to the planar surface 206 of the reflector body 202. In view of this disclosure, one skilled in the art will appreciate that the plurality of slots 212 is capable of controlling the chamber body 136 ( Figure 2 shown) and / or upper heater element array 142 ( Figure 2 shown).

[0060] like Fig.11As shown, the planar surface 206 of the reflector body 202 is substantially planar and is configured to reflect electromagnetic radiation incident on the planar surface 206 according to a planar surface illumination profile 214. In this regard, it is contemplated that the planar surface 206 defines a planar surface profile 216 that longitudinally spans the planar surface 206. The planar surface profile 216 reflects electromagnetic radiation incident along the planar surface 206 according to specular reflection or regular reflection. In view of this disclosure, it will be appreciated by those skilled in the art that the specular reflection or regular reflection of the planar surface profile 216 causes electromagnetic radiation rays incident on the planar surface 206 to exit from the planar surface 206 at the same angle as incident on the surface, but on opposite sides of the planar surface normal in the plane formed by the incident and reflected rays, and the planar surface 206 limits heat flux variations in an area illuminated using the planar surface illumination profile 214.

[0061] like Fig. 9 As shown, the ellipsoidal surface 210 of the reflector body 202 is configured to focus electromagnetic radiation reflected from the ellipsoidal surface 210 at a location covered by the ellipsoidal surface 210 according to the ellipsoidal surface illumination distribution 218. In this regard, it is contemplated that the ellipsoidal surface 210 defines an elliptical profile 222. The elliptical profile 222 is substantially orthogonal relative to the planar surface 206, has a near focus 224 and a far focus 226 arranged along a major axis 228, and also has a near vertex 230 and a far vertex 232 also arranged along the major axis 228, and the major axis 228 is orthogonal relative to a minor axis 234 of the elliptical profile 222, and the minor axis 234 is substantially parallel to the planar surface 206 of the reflector body 202. Advantageously, reflecting electromagnetic radiation incident on the ellipsoidal surface 210 using the ellipsoidal profile 222 according to the ellipsoidal surface illumination distribution 218 concentrates the heat flux associated with the reflected illumination within the area covered by the ellipsoidal surface 210 of the reflector body 202, increasing the temperature variation associated with the illumination reflected by the reflector body 202.

[0062] Continue to refer Figure 4 In some examples of the present disclosure, it is contemplated that the reflector body 202 may have a parabolic surface 236. Figure 8As shown, the parabolic surface 236 can be configured to distribute electromagnetic radiation reflected by the parabolic surface 236 according to a parabolic surface illumination distribution 238 over an area covered by the reflector body 202 and one or more surfaces longitudinally adjacent to the parabolic surface 236. In this regard, it is contemplated that the parabolic surface 236 defines a parabolic profile 240. The parabolic profile 240 can be orthogonal to the planar surface 206, extend parallel to the ellipsoidal surface 210 of the reflector body 202, and have a single focus 242 and an apex 244. It is contemplated that the single focus 242 is located between the reflector body 202 and the chamber body 136, the apex is located on the parabolic surface 236, and the single focus 242 and the apex 244 are located on a symmetry axis 246 defined by the parabolic profile 240 and are orthogonal to the planar surface 206. It is contemplated that the parabolic profile 240 includes a locus of points equidistant from the axis of symmetry 246 and a directrix 248 of the parabolic profile 240, the directrix 248 being substantially parallel to the planar surface 206. In light of this disclosure, one skilled in the art will appreciate that the parabolic surface illumination distribution 238 distributes electromagnetic radiation reflected from the parabolic surface 236 over a larger area than the area covered by the parabolic surface 236, reduces the average heat flux in the area covered by the parabolic surface 236 relative to the area covered by adjacent surfaces of the reflector body 202, and increases the temperature difference between the area covered by the parabolic surface 236 and the adjacent area covered by the surface of the reflector body 202 adjacent to the parabolic surface 236.

[0063] Continue to refer Figure 4 In some examples of the present disclosure, the reflector body 202 may have a partial cylindrical surface 250. The partial cylindrical surface 250 may extend parallel to the ellipsoidal surface 210 of the reflector body 202. The partial cylindrical surface 250 may further separate the planar surface 206 of the reflector body 202 from the ellipsoidal surface 210 of the reflector body 202. Fig.10As shown, the partial cylindrical surface 250 can be configured to longitudinally displace electromagnetic radiation reflected by the partial cylindrical surface 250 to an area longitudinally offset from an area covered by the partial cylindrical surface 250 according to the partial cylindrical surface illumination profile 252. In this regard, it is contemplated that the partial cylindrical surface 250 defines a partial circular profile 254 having a center 256 and a radius 258, and that the locus of points defining the circumferential segments of the partial circular profile 254 is located on the partial cylindrical surface 250. In another aspect, the locus of points defining the circumferential segments of the circular segments of the partial circular profile 254 can have an angular scan between about 20 degrees and about 120 degrees, or between about 45 degrees and about 120 degrees, or even between about 90 degrees and about 90 degrees. Advantageously, when specular reflections from the planar surface 206 may result in heat flux variations, utilizing a partially cylindrical surface 250 to shift the reflected electromagnetic radiation (where the partially circular profile 254 has an angular scan within these ranges) can smooth heat flux variations within the area covered by the planar surface 206, such as at the longitudinal edges.

[0064] refer to Figure 5 , the reflector body 202 is shown in a top view. In the example shown, the reflector body 202 is configured to be supported above the chamber body 136 and is configured to adjust the chamber body 136 ( Figure 3 164 (shown) Figure 3 260 ). In this regard, it is contemplated that the reflector body 202 is generally rectangular and has an injection edge 260, a discharge edge 262, a first side edge 264, and a second side edge 266. The injection edge 260 of the reflector body 202 extends between the first side edge 264 and the second side edge 266 of the reflector body 202 and can define a parabolic surface 236 of the reflector body 202. The first side edge 264 and the second side edge 266 extend longitudinally between the injection edge 260 and the discharge edge 262 of the reflector body 202, are parallel to each other, and are orthogonal relative to the injection edge 260 and the discharge edge 262 of the reflector body 202. It is contemplated that the first side edge 264 and the second side edge 266 of the reflector body 202 define a planar surface 206 ( Figure 4 ) and the ellipsoidal surface 210 ( Figure 4 It is also contemplated that the first side edge 264 and the second side edge 266 may further define the parabolic surface 236 of the reflector body 202 (eg, Figure 4 shown) and a partially cylindrical surface 250 ( Figure 4 shown).

[0065] The plurality of grooves 212 extend laterally across the grooved surface 204 of the reflector body 202 and are laterally offset from the first side edge 264 and the second side edge 266 of the reflector body 202. In this regard, it is contemplated that the plurality of grooves 212 are longitudinally spaced apart from one another between the first side edge 264 and the second side edge 266 of the reflector body 202 and may be substantially parallel to one another. In another aspect, the plurality of grooves 212 may be substantially parallel to either (or both) of the injection edge 260 and the discharge edge 262 of the reflector body 202, the plurality of grooves 212 may be substantially orthogonal relative to either (or both) of the first side edge 264 and the second side edge 266 of the reflector body 202, and each of the plurality of grooves 212 terminates at a location laterally offset from the first side edge 264 and the second side edge 266. In the example shown, the reflector body 202 has eleven (11) grooves. This is for illustrative purposes only and is not intended to be limiting. In view of the present disclosure, one skilled in the art will appreciate that the reflector body 202 may have fewer than eleven (11) grooves or greater than eleven (11) grooves and still be within the scope of the present disclosure.

[0066] In some examples, the reflector body 202 may include one or more temperature sensor mounts 268. The one or more temperature sensor mounts 268 may include a thickness 208 ( Figure 4 2) and a fastener pattern 272 defined in the grooved surface 204 of the reflector body 202. The fastener pattern 272 can extend around the through hole 270 and is configured to attach a temperature sensor, such as a pyrometer 176 ( Figure 2 The through hole 270 extends through the reflector body 202 and the thickness 208 of the reflector body 202 and fluidly couples the grooved surface 204 to the opposing surface of the reflector body 202. In this regard, it is contemplated that the through hole 270 can optically couple the grooved surface 204 of the reflector body 202 to the planar surface 206 ( Figure 4 ), or optically coupling the grooved surface 204 of the reflector body 202 to the ellipsoidal surface 210 of the reflector body 202 ( Figure 4 In some examples, the reflector body 202 can fluidly separate the through-hole 270 from the plurality of slots 212. Advantageously, this can improve the reliability and / or accuracy of temperature measurements taken by an optical temperature sensor (e.g., a pyrometer), for example by limiting air flow through the through-hole 270 that would otherwise affect the use of an optical temperature sensor (e.g., a pyrometer 176 ( Figure 3 The temperature measurements obtained are shown).

[0067] According to certain examples, the one or more temperature sensor mounts 268 may be first temperature sensor mounts 268, and the reflector body 202 may have one or more second temperature sensor mounts 274. The one or more second temperature sensor mounts 274 may be similar to the first temperature sensor mounts 268, additionally laterally and / or longitudinally offset from the first temperature sensor mounts 268, and optically couple the grooved surface 204 to the same surface of the reflector body 202 as the first temperature sensor mounts 268, or optically couple another surface of the reflector body 202 to the grooved surface 204. In view of this disclosure, those skilled in the art will appreciate that this enables temperature measurements to be taken at more than one location below the reflector body 202, such as at the chamber body 136 ( Figure 3 ) and / or from the chamber body 136 and the transparent material 156 ( Figure 3 In the illustrated example, the reflector body has four (4) sensor mounts, whereby the reflector body 202 is configured to support three (3) substrate pyrometers (e.g., “wafer” pyrometers) and a single chamber pyrometer (e.g., “quartz” pyrometer). Examples of suitable substrate pyrometers and quartz pyrometers include those shown and described in U.S. Patent Application Publication No. 2022 / 0301906A1 to Naik et al., filed on March 17, 2022, the contents of which are incorporated herein by reference in their entirety.

[0068] refer to Figure 6 , shows a bottom view of a reflector body 202 according to an example of the present disclosure. In the example shown, the planar surface 206 is located intermediate the injection edge 260 and the discharge edge 262 of the reflector body 202. In this regard, it is contemplated that the planar surface 206 of the reflector body 202 is longitudinally spaced from the injection edge 260 of the reflector body 202, such as by a distance substantially equal to or greater than a longitudinal span 276 of the ellipsoidal surface 210 of the reflector body 202. In some examples, the ellipsoidal surface 210 can be a first ellipsoidal surface 210, and the reflector body 202 can include a second ellipsoidal surface 278. The second ellipsoidal surface 278 can be similar to the first ellipsoidal surface 210, additionally separated from the first ellipsoidal surface 210 (e.g., longitudinally spaced apart) by the planar surface 206, further separating the planar surface 206 from the discharge edge 262 of the reflector body 202, and extending parallel to the first ellipsoidal surface 210 between the first side edge 264 and the second side edge 266. As shown and described herein, the reflector body 202 includes two (2) ellipsoidal surfaces. In view of the present disclosure, one skilled in the art will appreciate that the reflector body 202 can have a single ellipsoidal surface or more than two (2) ellipsoidal surfaces and still be within the scope of the present disclosure.

[0069] In some examples, the parabolic surface 236 can be a first parabolic surface 236 separated from the planar surface 206 by the ellipsoidal surface 210, and the reflector body 202 can have a second parabolic surface 280. The second parabolic surface 280 can be similar to the first parabolic surface 236, additionally separating the second ellipsoidal surface 278 from the discharge edge 262 of the reflector body 202, and extending parallel to the first parabolic surface 236 between the first side edge 264 and the second side edge 266 of the reflector body 202. In this regard, the second parabolic surface 280 can separate the planar surface 206 and the second ellipsoidal surface 278 from the discharge edge 262 of the reflector body 202. As shown and described herein, the reflector body 202 includes two (2) parabolic surfaces. In view of the present disclosure, those skilled in the art will understand that the reflector body 202 can have a single parabolic surface or more than two parabolic surfaces and still be within the scope of the present disclosure.

[0070] In some examples, the partial cylindrical surface 250 can be a first partial cylindrical surface 250, and the reflector body 202 can have a second partial cylindrical surface 282. The second partial cylindrical surface 282 can be similar to the first partial cylindrical surface 250, additionally separates the planar surface 206 from the second ellipsoidal surface 278 and the discharge edge 262 of the reflector body 202, and extends parallel to the first partial cylindrical surface 250 between the first side edge 264 and the second side edge 266 of the reflector body 202. The second partial cylindrical surface 282 can further separate the planar surface 206 from the second parabolic surface 280 of the reflector body 202. As shown and described herein, the reflector body 202 includes two (2) partial cylindrical surfaces. In view of the present disclosure, those skilled in the art will understand that the reflector body 202 can have a single partial cylindrical surface or more than two (2) partial cylindrical surfaces and still be within the scope of the present disclosure.

[0071] In some examples, the reflector body 202 can be integrally formed so as to have a monolithic arrangement. In this regard, the reflector body 202 can extend continuously without interruption between the injection edge 260 and the discharge edge 262 of the reflector body 202. In another aspect, the reflector body 202 can also extend continuously within the interruption between the first side edge 264 and the second side edge 266 of the reflector body 202. In view of this disclosure, those skilled in the art will appreciate that forming the reflector body 202 as a monolithic body can improve the chamber body 136 ( Figure 2 ), for example by limiting leakage of coolant through joints defined between segments of the reflector body 202.

[0072] In some examples, the reflector body 202 can be segmented, thereby having a segmented arrangement. In this regard, the reflector body 202 can include a first reflector body segment 284 and at least one second reflector body segment 286 that abut each other at a joint 288. Advantageously, forming the reflector body 202 as a segmented reflector body can simplify the chamber device 104 ( Figure 1 104), for example by limiting the weight of the reflector body segments so that the reflector body 202 can be removed and replaced from the chamber device 104 by a single maintainer.

[0073] In some examples, the reflector body 202 can be made of a bulk metal material 290 (eg, Figure 7 290) and has a reflective coating 292. In certain examples, the bulk metal material 290 may include an aluminum-containing material such as a 6064 aluminum alloy (or consist of or consist essentially of it), as a non-limiting example. According to certain examples, the bulk metal material 290 may include a copper- and zinc-containing material such as red brass or a dezincification-resistant (DZR) brass material (or consist of or consist essentially of it). In view of the present disclosure, those skilled in the art will appreciate that forming the reflector body 202 from an aluminum-containing material can limit the weight and / or cost of the reflector body. In view of the present disclosure, those skilled in the art will also appreciate that forming the reflector body 202 from brass limits the tendency of the reflector body to deform when heated, enabling the reflector to be used in chamber devices employed for deposition of material layers at high temperatures. Advantageously, forming the reflector body 202 from a DZR brass material enables the reflector body 202 to be cooled by a liquid coolant that is potentially corrosive to the brass material (e.g., due to zinc leaching), thereby limiting deformation of the reflector body 202 due to heating, such as in a chamber device used for deposition of material layers at relatively high temperatures (e.g., greater than 800 degrees Celsius). In this regard, the reflector body 202 can define one or more coolant channels 291 therein. The one or more coolant channels 291 can further span laterally across the reflector body 202 and further extend between the grooved surface 204 of the reflector body 202 and the ellipsoidal surface 210 of the reflector body 202 to allow liquid coolant to flow through the reflector body 202.

[0074] The reflective coating 292 covers at least a portion of the reflector body 202, such as at least a portion of the bulk metal material 290 forming the reflector body 202, and can reflect electromagnetic radiation within the infrared band. In some examples, the reflective coating 292 can cover the planar surface 206 and the ellipsoidal surface of the reflector body 202. According to some examples, the reflective coating 292 can cover the parabolic surface 236 and the partial cylindrical surface 250 of the reflector body 202. It is also contemplated that the reflective coating 292 can cover the second ellipsoidal surface 278, the second parabolic surface 280, and / or the second partial cylindrical surface 282. The reflective coating 292 can include a reflective material such as silver or gold (or consist of or consist essentially of it), as non-limiting examples. Advantageously, the reflective material such as silver and gold can have a thermal expansion coefficient similar enough to the bulk metal material described above, which is within the temperature range that the reflector body 202 is maintained during operation to limit deformation of the reflective coating 292 due to thermal cycling of the reflector body 202.

[0075] refer to Figure 7-11 , shows a portion of a chamber arrangement 104 including a substrate support 150 and an upper heater element array 142 according to an example of the present disclosure. In the example shown, the reflector body 202 has an inner rib 294, an outer rib 296, and an intermediate rib 298. The inner rib 294 is formed at a first side edge 264 ( Figure 5 ) and a second side edge 266 ( Figure 5 2 (shown in FIG. 2 ), longitudinally separating the planar surface 206 from the injection edge 260, and being bounded by the partial cylindrical surface 250 and the partial ellipsoidal surface 210 of the reflector body 202. In the example shown, the inner rib 294 is a first inner rib 294 and the reflector body 202 has a second inner rib 201. The second inner rib 201 is similar to the first inner rib 294, additionally separated from the first inner rib 294 by the planar surface 206, and further separates the first inner rib 294 from the discharge edge 262 of the reflector body 202. Although shown and described herein as having two (2) inner ribs, it should be understood and appreciated that the reflector body 202 can have a single inner rib or more than two (2) inner ribs and still be within the scope of the present disclosure.

[0076] The outer rib 296 is longitudinally located between the inner rib 294 and the injection edge 260 of the reflector body 202, extends transversely between the first side edge 264 and the second side edge 266, and is bounded by a portion of the parabolic surface 236 and the injection edge 260. In the example shown, the outer rib 296 is a first outer rib 296, and the reflector body 202 has a second outer rib 203. The second outer rib 203 is similar to the first outer rib 296, additionally separated longitudinally from the first inner rib 294 by a planar surface 206, and further separates the discharge edge 262 from the planar surface 206 of the reflector body 202. Although shown and described herein as having two (2) outer ribs, it should be understood and appreciated that the reflector body 202 can have a single outer rib or more than two (2) outer ribs and still be within the scope of the present disclosure.

[0077] The middle rib 298 is longitudinally intermediate (e.g., between) the inner rib 294 and the outer rib 296 and in this regard longitudinally separates the inner rib 294 from the outer rib 296. In another aspect, it is contemplated that the middle rib 298 longitudinally separates the inner rib 294 from the outer rib 296, extends between the first side 264 and the second side 266, and is bounded by longitudinally adjacent portions of the ellipsoidal surface 210 and the parabolic surface 236. In the illustrated example, the middle rib 298 is a first middle rib 298 and the reflector body 202 has a second middle rib 205. The second middle rib 205 is similar to the first middle rib 298, is additionally separated from the first middle rib 298 by the planar surface 206, and is further bounded by longitudinally adjacent portions of the second ellipsoidal surface 278 and the second parabolic surface 280. Although shown and described herein as having two (2) middle ribs, it should be understood and appreciated that the reflector body 202 can have a single middle rib or additional middle ribs and still be within the scope of the present disclosure.

[0078] In the illustrated example, the upper heater element array 142 includes eleven (11) upper linear lamps extending transversely across the upper wall of the chamber body 136 and spaced longitudinally between the injection end 158 and the discharge end 160 of the chamber body 136. In this regard, the upper heater element array 142 includes first outer linear lamps 190 and second outer linear lamps 192, first middle linear lamps 194 and second middle linear lamps 196, first inner linear lamps 198 and second inner linear lamps 101, and five (5) center linear lamps 103. Although illustrated and described herein as having eleven (11) laterally extending linear lamps in a longitudinally spaced arrangement, it should be understood and appreciated that the chamber assembly 104 ( Figure 1 ) may have different heater element array arrangements and still be within the scope of the present disclosure.

[0079] The first outer linear lamp 190 is supported above the chamber body 136 (eg, Figure 3 ) and at the injection end 158 of the chamber body 136 (as Figure 3 The first outer linear lamp 190 is also aligned with the first parabolic surface 236 of the reflector body 202 and arranged along the symmetry axis 246 defined by the first parabolic surface 236 and can laterally cover the single focus 242 of the parabolic profile 240 defined by the parabolic surface 236. Figure 8 As shown, when so positioned, electromagnetic radiation emitted by the first outer linear lamp 190 in a direction opposite to the chamber body 136 is emitted according to the parabolic surface illumination distribution 238 along the symmetry axis 246 (as shown in FIG. Figure 8 ) is reflected toward the chamber body 136 and enters the interior 164 of the chamber body 136 (as shown Figure 3 ). It is contemplated that the reflected electromagnetic radiation illuminates a portion of the substrate support 150 radially outward of the substrate 2 (eg, an edge portion of the substrate support 150 ) and a portion of the divider 148 extending around the substrate support 150 .

[0080] Continue to refer Figure 7 The second outer linear lamp 192 is similar to the first outer linear lamp 190 and is located near the discharge end 160 of the chamber body 136 (eg, Figure 3 164 and 165. The second outer linear lamp 192 is also supported between the second parabolic surface 280 and the chamber body 136 at a position (shown) between the second parabolic surface 280 and the chamber body 136. It is contemplated that the second outer linear lamp 192 illuminates structures within the interior 164 of the chamber body 136 using the second parabolic surface distribution 209. The illumination can be directed along and distributed about the axis of symmetry of the second parabolic profile defined by the second parabolic surface 280 of the reflector body 202.

[0081] The first middle linear lamp 194 is supported above the chamber body 136 and between the reflector body 202 and the chamber body 136 between the first outer linear lamp 190 and the second outer linear lamp 192. The first middle linear lamp 194 is further supported between the first ellipsoidal surface 210 of the reflector body 202 and the upper wall of the chamber body 136 and along the ellipsoidal profile 222 defined by the ellipsoidal surface 210 of the reflector body 202 (e.g., Fig. 9 The major axis 228 (as shown) Fig. 9 As shown in Fig. 9 As shown, the first intermediate linear lamp 194 can laterally cover the near focus 224 of the elliptical profile 222 defined by the ellipsoidal surface 210 of the reflector body 202 (eg, Fig. 9 The first intermediate linear lamp 194 can also be laterally disposed at a first side edge 264 (eg, Figure 5 as shown) and a second side edge 266 (as shown Figure 5222 extends parallel to the ellipsoidal surface 210 about a near focus 224. So positioned, electromagnetic radiation emitted by the first intermediate linear lamp 194, emitted in a direction opposite to the chamber body 136, is reflected along the major axis 228 of the elliptical profile 222 toward the chamber body 136 and enters the interior 164 of the chamber body 136 according to the first ellipsoidal surface illumination distribution 218.

[0082] Continue to refer Figure 7 The second intermediate linear lamp 196 is similar to the first intermediate linear lamp 194 and is also supported on the second ellipsoidal surface 278 and the chamber body 136 (eg, Figure 3 164 of the chamber body 136 using the second ellipsoidal surface distribution 215. In this regard, it is contemplated that the second ellipsoidal surface 278 also illuminates the radially outer peripheral surface portion 3 along the second major axis 217 of the second ellipsoidal profile 219 defined by the second ellipsoidal surface 278 of the reflector body 202. In view of this disclosure, those skilled in the art will appreciate that this can increase the tunability provided by the first ellipsoidal surface 210 of the reflector body 202. In view of this disclosure, those skilled in the art will also appreciate that one or more external ribs 162 ( Figure 3 In an example in which the substrate 2 is shielded from electromagnetic radiation reflected by the first ellipsoidal surface 210 , this may amplify the tunability provided by the first ellipsoidal surface 210 .

[0083] The first inner linear lamp 198 is located between the first intermediate linear lamp 194 and the discharge end 160 (eg, Figure 3 ) is supported above the chamber body 136 and between the reflector body 202 and the chamber body 136 (as shown) Figure 3 The first inner linear lamp 198 is further located below the first partial cylindrical surface 250 of the reflector body 202 and extends parallel to the first partial cylindrical surface 250 of the reflector body 202. Fig.10 As shown, the first inner linear lamp 198 can laterally overlap (e.g., be concentric) with a center 256 of a first partial circular profile 254 defined by the first partial cylindrical surface 250 of the reflector body 202. When so positioned, electromagnetic radiation emitted by the first inner linear lamp 198 in a direction opposite to the chamber body 136 is reflected by the first partial cylindrical surface 250 toward the chamber body 136 to the interior 164 of the chamber body 136 (e.g., Figure 3 ), and shifts toward the rotation axis 174 according to the first partial cylindrical surface illumination distribution 252.

[0084] Continue to refer Figure 7, the second inner linear lamp 101 is similar to the first inner linear lamp 198 and is also supported between the second partial cylindrical surface 282 and the chamber body 136 (such as Figure 3 It is contemplated that the second inner linear light 101 illuminates the interior 164 of the chamber body 136 that is displaced toward the rotation axis 174 (as shown). Figure 3 2). It is also contemplated that the second partially cylindrical surface 282 illuminates the structure using a second partially cylindrical surface illumination distribution 221 defined by the second partially cylindrical surface 282 of the reflector body 202. In view of this disclosure, one skilled in the art will appreciate that this provides further compensation for variations in reflected electromagnetic radiation from the planar surface 206 of the reflector body 202. The second partially cylindrical surface illumination distribution 221 may further compensate for variations in reflected electromagnetic radiation from the planar surface 206 of the reflector body 202. Figure 3 Shielding of electromagnetic radiation reflected from the planar surface 206 ) when, for example, the plurality of external ribs 162 have different spacings relative to one another on longitudinally opposite sides of the rotational axis 174 .

[0085] The central linear lamp 103 is supported between the planar surface 206 of the reflector body 202 and the chamber body 136 (eg, Figure 3 ) and longitudinally distributed between the first inner linear lamp 198 and the second inner linear lamp 101. The central linear lamp 103 is further distributed between the injection end 158 of the chamber body 136 (as shown in FIG. Figure 3 ) and the discharge end 160 of the chamber body 136 (as shown Figure 3 174 between the longitudinal opposite sides of the rotation axis 174. Fig.11 As shown, according to the staggered illumination distribution 223 associated with the plurality of central linear lights 103, the planar surface 206 thereby illuminates the interior 164 according to the planar surface illumination distribution 214 associated with each of the plurality of central linear lights 103 ( Figure 3 In view of this disclosure, those skilled in the art will appreciate that this can limit the variation in heat flux in structures illuminated by electromagnetic radiation generated by the plurality of central linear lamps 103 and reflected by the planar surface 206 into the interior 164 of the chamber body 136. In view of this disclosure, those skilled in the art will also appreciate that the variation at the longitudinally opposite edges of the staggered illumination distribution 223 can be caused by the first partial cylindrical surface illumination distribution 252 ( Figure 7 ) and a second part cylindrical surface illumination distribution 221 ( Figure 7 shown) restrictions.

[0086] Reference Fig.12 , and does not include the reflector 200 ( Figure 1 ) compared to the chamber arrangement shown in FIG. 300 , the chamber arrangement 104 ( Figure 1 ) across the substrate temperature adjustability within the range of 80% to 120% of the nominal power applied to the first intermediate linear lamp 194 and the second intermediate linear lamp 196. As shown by traces 302 and 304, when the power applied to the first intermediate linear lamp 194 and the second intermediate linear lamp 196 is adjusted between about 80% and about 120% of the nominal power, the temperature within the peripheral surface region of the substrate can be varied within a range of about 0.6 degrees Celsius relative to the inner surface region of the substrate in the chamber apparatus that does not include the reflector 200, as shown by arrow 306. Conversely, as shown by trace 308 and trace 310 with arrow 312, when the power applied to the first intermediate linear lamp 194 and the second intermediate linear lamp 196 is adjusted between about 80% and about 120% of the nominal power, the temperature within the peripheral surface region of the substrate 2 at the bevel ( Figure 1 The temperature of the chamber arrangement 104 (shown) can be adjusted within a range of about 1.6 degrees Celsius relative to the inner surface area of ​​the substrate 2. Advantageously, the adjustability within these ranges gives the chamber arrangement 104 the ability to compensate for a greater amount of edge roll-up and edge roll-down, such as during a deposition process where a layer of material is deposited on a patterned substrate having a high emissivity, compared to a chamber arrangement that does not include the reflector 200. For example, the covering substrate 2 ( Figure 1 The radial outer peripheral surface portion 5 (shown) Figure 7 The material layer 4 (shown) Figure 1 The amplitude of the edge rolling up or the edge rolling down in the embodiment shown in FIG. 1 can be tuned to be smaller than that in the embodiment without the reflector 200 ( Figure 1 The amplitude of the upward roll-up and downward roll-down deposited in the chamber device (shown) is half.

[0087] refer to Fig.13 , a material layer deposition method 400 is shown. The method 400 includes, at a semiconductor processing system having a reflector as described above, positioning a substrate at a far focus defined by an elliptical profile of a reflector body, for example, at a reflector body 202 (e.g., Figure 4 The ellipsoidal surface 210 (as shown) Figure 4 The elliptical profile 222 (as shown) is defined by Fig. 9 The far focus 226 (as shown) Fig. 9 The substrate 2 (as shown) at Figure 1 ), as shown in block 410. The method 400 also includes heating the substrate using electromagnetic radiation emitted toward the substrate by one or more linear lamps supported at a near focus of an elliptical profile of the reflector body, such as near focus 224 of the elliptical profile defined by the ellipsoidal surface (e.g., Fig. 9), as shown in block 520. The method 400 also includes further heating the substrate by using the ellipsoidal surface of the reflector body to reflect electromagnetic radiation emitted by the one or more linear lamps in a direction opposite to the substrate toward a far focal point, and using an epitaxial deposition technique to deposit a silicon-containing material layer (e.g., material layer 4 ( Figure 1 )) is deposited onto the substrate, as shown in blocks 430 and 440. It is contemplated that in the ellipsoidal surface illumination distribution, the ellipsoidal surface concentrates the heat flux at a far focus of the ellipsoidal surface using electromagnetic radiation reflected by the ellipsoidal surface, and the heat flux at the far focus of the ellipsoidal surface is limited by increasing the adjustability of the substrate temperature at a radially outer peripheral surface portion of the substrate using power applied to one or more linear lamps, as shown in blocks 442 and 444.

[0088] In some examples, the reflector body can have a parabolic surface, such as parabolic surface 236 (eg, Figure 4 ), and method 400 may further include distributing electromagnetic radiation reflected by the parabolic surface to structures located radially outside the substrate, as shown in block 450. The parabolic surface may be configured to have a parabolic surface illumination distribution, such as parabolic surface illumination distribution 238 ( Figure 7 ), reflects electromagnetic radiation incident on the parabolic surface, and distributes heat flux radially outwardly on the ellipsoidal surface of the reflector body, as shown in block 452. It is contemplated that the electromagnetic radiation reflected by the parabolic surface further limits variations in the material layer deposited on the substrate, for example by conducting heat distributed to a surface portion of a substrate support on which the substrate is mounted radially outwardly of the substrate to a contact surface on which the substrate is mounted using the parabolic surface illumination distribution, as shown in block 454.

[0089] In some examples, the reflector body may include a partial cylindrical surface, such as partial cylindrical surface 250 (eg, Figure 4 ), and the cylindrical surface can distribute electromagnetic radiation reflected by the cylindrical surface to the inner surface area of ​​the substrate covered by the planar surface of the reflector body, as shown in block 460. The partial cylindrical surface can be illuminated according to the partial cylindrical surface illumination distribution, for example, using the partial cylindrical surface illumination distribution 252 ( Figure 7 ), reflecting electromagnetic radiation radially inward of the ellipsoidal surface of the reflector, as shown in block 462. The partially cylindrical surface can further limit cross-substrate variations in a material layer deposited onto the substrate, for example by compensating for heat flux variations associated with a planar surface illumination distribution associated with specular or regular reflection of electromagnetic radiation reflected from the planar surface, such as planar surface illumination distribution 214 (as shown in FIG. Figure 7 as shown), as shown in box 464.

[0090] In some examples, the reflector body can have a planar surface, such as planar surface 206 (eg, Figure 4 ), and the method 400 may include further heating the radially inner inner surface portion of the substrate using electromagnetic radiation reflected from the planar surface of the reflector body, as also shown in block 440. The planar surface may reflect electromagnetic radiation incident on the planar surface according to a planar surface illumination distribution that may limit material layer variations within a material layer deposited onto the radially inner inner surface portion of the substrate located on the substrate support, as further shown in block 440.

[0091] In a single wafer cross-flow chamber apparatus, lateral substrate temperature variations may be controlled by varying the power applied to lamps supported on the exterior of the chamber apparatus and used to heat a substrate located within the chamber apparatus. For example, in substrates that exhibit relative layer center-to-edge temperature variations (e.g., patterned substrates exhibiting high emissivity relative to blanket substrates), the power applied to lamps covering the periphery of the substrate may be increased relative to the power applied to lamps covering the inner surface area of ​​the substrate. Within the physical constraints of the lamp design and lamp power system, this edge power biasing technique may limit center-to-edge variations in a layer of material deposited onto the substrate that would otherwise be associated with the center-to-edge temperature variation characteristics of the substrate. However, in some substrates, the emissivity of the substrate may be such that the center-to-edge temperature variation characteristics of the substrate exceed the ability to be compensated by lamp power biasing.

[0092] In the examples described herein, a reflector is provided that concentrates reflected electromagnetic radiation on a peripheral surface portion of a substrate, increasing the tunability of temperature compensation by lamp power regulation, which is otherwise available on the peripheral surface portion of the substrate. In this regard, a reflector having an ellipsoidal surface covering the peripheral surface portion can be used to concentrate the reflected electromagnetic radiation on the peripheral surface portion of the substrate. The reflected electromagnetic radiation can be concentrated at a surface location covering a contact location between the substrate and the substrate support, which contact location is opposite to the peripheral surface portion of the substrate, locally increasing the heat flux and weakening the thermal characteristics of the substrate. In the case where the substrate exhibits a relatively low emissivity (e.g., an unpatterned blanket substrate), the concentration of the reflected electromagnetic radiation on the peripheral surface portion increases the ability to compensate for the upward roll-up (local thickening) of the material layer thickness on the peripheral surface portion of the substrate relative to the inner surface portion of the substrate using lamp power regulation. In the case where the substrate exhibits a relatively high emissivity (e.g., a patterned substrate), the concentration of the reflected electromagnetic radiation on the peripheral surface portion of the substrate increases the ability to compensate for the downward roll-up (local thickening) of the material layer thickness on the peripheral surface portion of the substrate relative to the inner surface portion of the substrate using lamp power regulation. In either process, the properties of the material layer covering the peripheral surface portion of the substrate can be closer to the properties within the material layer covering the inner portion of the substrate surface, thereby improving the performance of semiconductor devices formed using the material layer covering the peripheral surface portion of the substrate.

[0093] In some example reflectors described herein, the reflector may have a parabolic surface. The parabolic surface may be radially outside the substrate and cover a portion of the substrate support radially outside the substrate bevel to distribute the reflected electromagnetic radiation on the portion of the substrate support radially outside the substrate bevel. The contact surface of the substrate support on which the substrate is placed is heated by conduction using electromagnetic radiation reflected by the parabolic surface, and a lamp covering the substrate support radially outward of the substrate is used, which further increases the tunability of the lamp covering the peripheral surface portion of the substrate. According to some examples, the reflector described herein may have a partial cylindrical surface. The partial cylindrical surface may be radially inside the ellipsoidal surface, covering the inner surface portion of the substrate, and shifting the reflected electromagnetic radiation reflected by the partial cylindrical surface in the opposite direction to the ellipsoidal surface, compensating for the change in heat flux through the inner surface portion of the substrate associated with the specular reflection of the electromagnetic radiation reflected by the plane surface of the reflector separated from the ellipsoidal surface by the partial cylindrical surface of the reflector.

[0094] Although the present disclosure has been provided in the context of certain embodiments and examples, those skilled in the art will understand that the present disclosure extends to other alternative embodiments and / or uses of embodiments beyond the specifically described embodiments and obvious modifications and equivalents thereof. In addition, although various variations of the embodiments of the present disclosure have been shown and described in detail, other modifications within the scope of the present disclosure will be apparent to those skilled in the art based on the present disclosure. It is also contemplated that various combinations or sub-combinations of the specific features and aspects of the embodiments may be made and still fall within the scope of the present disclosure. It should be understood that the various features and aspects of the disclosed embodiments may be combined or replaced with one another in order to form different modes of embodiments of the present disclosure. Therefore, the scope of the present disclosure should not be limited by the specific embodiments described above.

[0095] The headings provided herein, if any, are for convenience only and do not necessarily affect the scope or meaning of the apparatus and methods disclosed herein.

Claims

1. A reflector, comprising: A reflector body having: Grooved surface; a planar surface opposite the grooved surface and separated from the grooved surface by the thickness of the reflector body; as well as an ellipsoidal surface which deviates from the planar surface and is opposite the grooved surface, the ellipsoidal surface being separated from the grooved surface by the thickness of the reflector body, wherein the ellipsoidal surface defines an elliptical profile orthogonal to the planar surface, wherein the ellipsoidal surface spans the grooved surface of the reflector body, and Therein, the ellipsoidal surface uses electromagnetic radiation reflected by the ellipsoidal surface of the reflector body to concentrate the heat flux at a far focus of the ellipsoidal profile.

2. The reflector according to claim 1, wherein: The ellipsoidal surface is a first ellipsoidal surface, and the reflector body has a second ellipsoidal surface separated from the grooved surface by a thickness of the reflector body, wherein the second ellipsoidal surface extends parallel to the first ellipsoidal surface, and wherein the second ellipsoidal surface is separated from the first ellipsoidal surface by the planar surface.

3. The reflector according to claim 1, wherein: The reflector body has a parabolic surface defining a parabolic profile orthogonal to the planar surface, the parabolic surface extending parallel to the ellipsoidal surface of the reflector body.

4. The reflector according to claim 3, wherein: The ellipsoidal surface separates the parabolic surface of the reflector body from the planar surface of the reflector body.

5. The reflector according to claim 3, wherein: The parabolic surface of the reflector body is separated from the ellipsoidal surface of the reflector body by a planar surface of the reflector body.

6. The reflector according to claim 1, wherein: The reflector body has a part-cylindrical surface defining a part-circular profile, the part-circular profile being orthogonal with respect to the planar surface, the part-cylindrical surface extending parallel to the ellipsoidal surface of the reflector body.

7. The reflector according to claim 6, wherein: The partial cylindrical surface of the reflector body separates the ellipsoidal surface of the reflector body from the planar surface of the reflector body.

8. The reflector according to claim 6, wherein: The part-cylindrical surface of the reflector body is separated from the ellipsoidal surface by a planar surface of the reflector body.

9. The reflector according to claim 1, wherein: The reflector body has an inner rib that separates the planar surface of the reflector body from the ellipsoidal surface of the reflector body, the inner rib having a partial cylindrical surface that defines a partial circular profile normal to and facing the planar surface.

10. The reflector according to claim 1, wherein: The reflector body has a middle rib separated from the planar surface by the ellipsoidal surface of the reflector body, the middle rib having a parabolic surface defining a parabolic profile that is orthogonal relative to the planar surface of the reflector body.

11. The reflector according to claim 1, wherein: The reflector body has an outer rib separated from the planar surface by an ellipsoidal surface of the reflector body, the outer rib having a parabolic surface defining a parabolic profile orthogonal to the planar surface and an edge surface orthogonal to the planar surface.

12. The reflector according to claim 1, wherein: The reflector body is formed of a bulk metal material and further includes a gold coating conformally deposited onto the planar and ellipsoidal surfaces of the reflector body.

13. The reflector according to claim 1, wherein: The grooved surface defines a plurality of grooves extending parallel to the ellipsoidal surface of the reflector body, the plurality of grooves fluidly coupling the grooved surface with the planar surface and the ellipsoidal surface of the reflector body, and wherein the thickness of the reflector body defines a coolant channel extending between the grooved surface and the ellipsoidal surface of the reflector body.

14. The reflector body according to claim 1, wherein: The reflector body has an integral arrangement, or wherein the reflector body has a segmented arrangement, including a first body segment and at least one second body segment, the planar surface being defined on the first body segment, the ellipsoidal surface being defined on at least one second body segment, the second body segment being adjacent to the first body segment at a joint spanning the reflector body.

15. A semiconductor processing system comprising: a chamber body formed of a transmissive material; a substrate support disposed within the chamber body; The reflector of claim 1, supported above the chamber body; as well as a lamp array comprising a plurality of linear lamps supported between a reflector and a chamber body, wherein a first of the plurality of linear lamps extends about a near focus of an elliptical profile defined by the ellipsoidal surface of the reflector body, and The second one of the plurality of linear lamps separates the planar surface of the reflector body from the chamber body and is parallel to the first one of the plurality of linear lamps.

16. The semiconductor processing system of claim 15, wherein: A far focus of the elliptical profile intersects a surface of a substrate positioned on the substrate support.

17. The semiconductor processing system of claim 15, wherein: The chamber body has a plurality of external ribs extending parallel to the ellipsoidal surface, and wherein a first one of the plurality of linear lamps covers one of the plurality of external ribs.

18. The semiconductor processing system of claim 15, wherein: The chamber body has a plurality of external ribs extending parallel to the ellipsoidal surface, and wherein a first one of the plurality of linear lamps is located between two of the plurality of external ribs.

19. The semiconductor processing system of claim 15, wherein: The substrate support is supported for rotation within the chamber body to rotate about a rotation axis, wherein a far focus is between about 135 millimeters and about 155 millimeters offset from the rotation axis.

20. A material layer deposition method, comprising: At a semiconductor processing system, the semiconductor processing system includes a reflector having a reflector body, the reflector body having a grooved surface, a planar surface opposite the grooved surface and separated from the grooved surface by a thickness of the reflector body, and an ellipsoidal surface offset from the planar surface and opposite the grooved surface, the ellipsoidal surface being separated from the grooved surface by a thickness of the reflector body, the ellipsoidal surface defining an elliptical profile orthogonal to the planar surface, the ellipsoidal surface spanning the grooved surface of the reflector body, positioning the substrate at a far focus of an elliptical profile defined by the ellipsoidal surface of the reflector body; heating the substrate using electromagnetic radiation emitted toward the substrate by a lamp supported at a near focus of an elliptical profile of the reflector body; further heating the substrate by reflecting electromagnetic radiation emitted in a direction opposite to the substrate toward a distant focal point using the ellipsoidal surface of the reflector body; depositing a layer of silicon-containing material onto the substrate using an epitaxial deposition technique; Thereby, the ellipsoidal surface concentrates the heat flux at a far focus of the ellipsoidal profile using electromagnetic radiation reflected by the ellipsoidal surface; and Thus, the heat flux concentrated at the far focus of the elliptical profile limits cross-substrate variations in the silicon-containing material layer deposited onto the substrate using epitaxial deposition techniques.

Images