Defect detection device and method and ultrasonic microscope
By using the dielectric liquid control module in the defect detection device, dielectric liquid is injected into the upper surface of the target wafer of the integrated circuit and forming a wind flow through gas, the problem of dielectric liquid penetration affecting product yield is solved, and efficient defect detection and product quality are achieved promote.
Patent Information
- Application Number
- CN202411587701.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-07
- Publication Date
- 2025-02-18
AI Technical Summary
During the defect detection process of integrated circuits, dielectric liquid penetrates into the bonding interface, affecting product yield.
A defect detection device is designed, including a scanning probe and a dielectric liquid control module, injecting dielectric liquid into the upper surface of the target wafer through the dielectric liquid control module, and forming an airflow through gas supply, limiting the distribution of dielectric liquid on the upper surface of the wafer.
It effectively avoids the penetration of dielectric liquid to the sides of the wafer and other wafers, improves product yield, and ensures the smooth progress of defect detection.
Smart Images
Figure CN119470646A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of integrated circuits, and in particular to a defect detection device, method and ultrasonic microscope. Background Art
[0002] After some processes of integrated circuits, defect detection is required to ensure product quality. For example, after the wafer-to-wafer or die-to-wafer bonding process, CSAM (ultrasonic microscopy) is needed to detect defects such as delamination, voids, and cracks inside the bonding interface.
[0003] Among them, the ultrasonic microscope transmits ultrasonic signals through the dielectric liquid. When the signal encounters the interface of different materials, it will be partially reflected and penetrated. The intensity of this transmitted echo will vary due to different material densities. Therefore, the ultrasonic microscope can use this characteristic to detect defects inside the material and perform imaging based on the changes in the received signal.
[0004] However, during the defect detection process of the related technology, the wafer surface needs to be immersed in the dielectric liquid for a long time, which will cause the dielectric liquid to penetrate into the bonding interface, thereby affecting the product yield. Summary of the invention
[0005] In view of this, the embodiments of the present application provide a defect detection device, method and ultrasonic microscope, which can avoid the adverse effects caused by the penetration of dielectric liquid and improve the product yield.
[0006] The technical solution of the embodiment of the present application is implemented as follows:
[0007] An embodiment of the present application provides a defect detection device, which includes: a scanning probe and a dielectric liquid control module; the control head of the dielectric liquid control module is arranged on the scanning probe and surrounds the side wall of the scanning probe; when the scanning probe moves to directly above a target chip, the dielectric liquid control module injects dielectric liquid into the upper surface of the target chip and confines the dielectric liquid to the upper surface of the target chip to perform defect detection on the area where the target chip is located.
[0008] In some embodiments of the present application, the dielectric liquid control module includes: a dielectric liquid supply unit, a gas supply unit and a gas-liquid recovery unit; the dielectric liquid supply unit is configured to inject dielectric liquid into the upper surface of the target chip; the gas supply unit is configured to pass gas around the target chip to form a wind flow, thereby limiting the dielectric liquid to the upper surface of the target chip; the gas-liquid recovery unit is configured to recover the gas and the dielectric liquid on the target chip after defect detection is performed on the area where the target chip is located.
[0009] In some embodiments of the present application, the dielectric liquid supply unit includes: a liquid supply hole, a liquid supply pipe and a liquid storage tank; the gas supply unit includes: a gas supply hole, a gas supply pipe and a gas source; the gas-liquid recovery unit includes: a gas-liquid recovery hole, a gas-liquid recovery pipe and a vacuum source; the liquid supply hole, the gas supply hole and the gas-liquid recovery hole are all arranged on the control head of the dielectric liquid control module; the liquid supply hole, the gas supply hole and the gas-liquid recovery hole are respectively arranged in a ring around the scanning probe.
[0010] In some embodiments of the present application, the gas-liquid recovery hole includes: a first recovery hole and a second recovery hole; the liquid supply hole, the first recovery hole, the gas supply hole and the second recovery hole are arranged in a ring around the scanning probe in sequence from the inside to the outside.
[0011] In some embodiments of the present application, the scanning probe protrudes out of the control head of the medium liquid control module.
[0012] In some embodiments of the present application, the gas supply hole is inclined toward the scanning probe; and the angle between the gas supply hole and the surface of the control head is greater than 55° and less than 65°.
[0013] An embodiment of the present application also provides a defect detection method, which includes: moving a scanning probe to directly above a target wafer; injecting a dielectric liquid into the upper surface of the target wafer and confining the dielectric liquid to the upper surface of the target wafer; and performing defect detection on the area where the target wafer is located.
[0014] In some embodiments of the present application, confining the medium liquid to the upper surface of the target wafer includes: introducing gas around the target wafer to form a wind flow to confine the medium liquid to the upper surface of the target wafer.
[0015] In some embodiments of the present application, after performing defect detection on the area where the target wafer is located, the defect detection method further includes: recovering the gas and the dielectric liquid on the target wafer.
[0016] An embodiment of the present application also provides an ultrasonic microscope, which includes the defect detection device described in the above scheme.
[0017] It can be understood that during the defect detection process, the dielectric liquid is limited to the upper surface of the target chip to prevent the dielectric liquid from immersing the sides of the target chip and other chips. In this way, while ensuring the smooth progress of defect detection, the adverse effects caused by the penetration of the dielectric liquid are avoided, thereby improving the product yield. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0019] Figure 1 A schematic diagram of the structure of the defect detection device provided in the embodiment of the present application Figure 1 ;
[0020] Figure 2 A schematic diagram of the structure of the defect detection device provided in the embodiment of the present application Figure 2 ;
[0021] Figure 3 A schematic diagram of the structure of the defect detection device provided in the embodiment of the present application Figure 3 ;
[0022] Figure 4 A schematic diagram of the structure of the defect detection device provided in the embodiment of the present application Figure 4 ;
[0023] Figure 5 A schematic diagram of the structure of the defect detection device provided in the embodiment of the present application Figure 5 ;
[0024] Figure 6 A schematic diagram of the structure of the defect detection device provided in the embodiment of the present application Figure 6 ;;
[0025] Figure 7 Schematic diagram of the implementation process of the defect detection method provided in the embodiment of the present application Figure 1 ;
[0026] Figure 8 Schematic diagram of the implementation process of the defect detection method provided in the embodiment of the present application Figure 2 ;
[0027] Fig. 9 Schematic diagram of the implementation process of the defect detection method provided in the embodiment of the present application Figure 3 ;
[0028] Fig.10 A schematic diagram of the structure of an ultrasonic microscope provided in an embodiment of the present application. DETAILED DESCRIPTION
[0029] The exemplary embodiments disclosed in the present application will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present application are shown in the accompanying drawings, it should be understood that the present application can be implemented in various forms and should not be limited by the specific embodiments described herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present application and to fully convey the scope disclosed in the present application to those skilled in the art.
[0030] In the following description, a large number of specific details are given to provide a more thorough understanding of the present application. However, it is obvious to those skilled in the art that the present application can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present application, some technical features known in the art are not described; that is, all features of the actual embodiments are not described here, and well-known functions and structures are not described in detail.
[0031] In the drawings, the sizes of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like reference numerals denote like elements throughout.
[0032] It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer or part discussed below can be represented as a second element, component, region, layer or part. When the second element, component, region, layer or part is discussed, it does not indicate that the present application necessarily has a first element, component, region, layer or part.
[0033] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be a limitation of the present application. When used herein, the singular "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates another way. It should also be understood that the terms "composition" and / or "comprising" when used in this specification determine the existence of the features, integers, steps, operations, elements and / or parts, but do not exclude the existence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items. All numerical ranges herein include endpoint values.
[0034] The present application embodiment provides a defect detection device, including: a scanning probe and a medium liquid control module. Figure 1 As shown, the control head of the medium liquid control module is arranged on the scanning probe and surrounds the side wall of the scanning probe.
[0035] refer to Figure 1 , a plurality of dies are bonded on a wafer. When the scanning probe moves to the top of the target wafer, the dielectric liquid control module injects dielectric liquid into the upper surface of the target wafer and limits the dielectric liquid to the upper surface of the target wafer to perform defect detection on the area where the target wafer is located.
[0036] In the embodiment of the present application, the size of the scanning probe and the size of the control head of the dielectric liquid control module are determined according to the size of the wafer. The size of the scanning probe can be comparable to the size of the wafer, while the size of the control head of the dielectric liquid control module can be slightly larger than the size of the wafer. In this way, the dielectric liquid control module can control the immersion area of the dielectric liquid to be limited to the size range of a wafer, thereby ensuring that during the defect detection process, the dielectric liquid is limited to the upper surface of the target wafer, and will not immerse the side of the target wafer and other wafers.
[0037] In the embodiment of the present application, the medium liquid has surface tension. Under the effect of the surface tension, the medium liquid can be confined in a certain area. The medium liquid may include water or oil.
[0038] It can be understood that during the defect detection process, the dielectric liquid is limited to the upper surface of the target chip to prevent the dielectric liquid from immersing the sides of the target chip and other chips. In this way, while ensuring the smooth progress of defect detection, the adverse effects caused by the penetration of the dielectric liquid are avoided, thereby improving the product yield.
[0039] In some embodiments of the present application, reference Figure 1 The scanning probe protrudes from the control head of the medium liquid control module. In this way, during the defect detection process, a gap between the scanning probe and the medium liquid can be avoided, ensuring that the top of the scanning probe can be immersed in the medium liquid, thereby ensuring the accuracy of the defect detection result.
[0040] In some embodiments of the present application, the medium liquid control module includes: a medium liquid supply unit, a gas supply unit and a gas-liquid recovery unit.
[0041] The dielectric liquid supply unit is configured to inject dielectric liquid into the upper surface of the target wafer. The gas supply unit is configured to pass gas around the target wafer to form a wind flow, so as to limit the dielectric liquid to the upper surface of the target wafer. The gas-liquid recovery unit is configured to recover the gas and dielectric liquid on the target wafer after defect detection is performed on the area where the target wafer is located.
[0042] refer to Figure 2At the beginning of defect detection in the target wafer area, the dielectric liquid supply unit supplies liquid and injects dielectric liquid onto the upper surface of the target wafer. At the same time, the gas supply unit supplies gas and passes gas around the target wafer to form a wind flow, which limits the dielectric liquid to the upper surface of the target wafer; the gas supply continues until the defect detection in the target wafer area is completed. After the defect detection in the target wafer area is completed, the gas-liquid recovery unit recovers liquid and gas to recover the gas and dielectric liquid on the target wafer.
[0043] It can be understood that by introducing gas around the target chip to form a wind flow, the surface tension of the wind flow and the dielectric liquid can be used to limit the dielectric liquid to the upper surface of the target chip, thereby preventing the dielectric liquid from immersing the sides of the target chip and other chips. In this way, while ensuring the smooth progress of defect detection, the adverse effects caused by the penetration of the dielectric liquid are avoided, thereby improving the product yield.
[0044] At the same time, after the defect detection in the area where the target wafer is located is completed, the gas and dielectric liquid on the target wafer are recovered in time to prevent the dielectric liquid from flowing into other areas, thereby avoiding the adverse effects caused by the penetration of the dielectric liquid and improving the product yield.
[0045] In some embodiments of the present application, the medium liquid supply unit includes: a liquid supply hole, a liquid supply pipe and a liquid storage tank. The gas supply unit includes: a gas supply hole, a gas supply pipe and a gas source. The gas-liquid recovery unit includes: a gas-liquid recovery hole, a gas-liquid recovery pipe and a vacuum source.
[0046] In the present application examples, reference Figure 3 The medium liquid in the liquid storage tank is supplied to the area where the scanning probe is located (i.e., the upper surface of the target chip) through the liquid supply pipe, and the medium liquid is supplied to the scanning probe through the liquid supply hole ( Figure 3 Gas supply hole (not shown) output. Figure 3 The gas supply pipe is connected to the gas source to supply gas and form wind flow. Figure 3 The gas source is connected to the gas source through a gas-liquid recovery pipe for liquid recovery and gas recovery.
[0047] It should be noted that Figure 4 This is a bottom view of the control head of the medium fluid control module. Figure 5 A cross-sectional view of the control head of the medium fluid control module.
[0048] In the present application examples, reference Figure 4 and Figure 5 The liquid supply hole, the gas supply hole and the gas-liquid recovery hole are all arranged on the control head of the medium liquid control module. The liquid supply hole, the gas supply hole and the gas-liquid recovery hole are respectively arranged in a ring around the scanning probe.
[0049] In some embodiments of the present application, reference Figure 4 and Figure 5 The gas-liquid recovery hole includes: a first recovery hole and a second recovery hole. The liquid supply hole, the first recovery hole, the gas supply hole and the second recovery hole are sequentially arranged in a ring around the scanning probe from the inside to the outside.
[0050] In the present application examples, reference Figure 4 and Figure 5 , a circle of liquid supply holes and a circle of gas supply holes are arranged on the control head of the medium liquid control module; in addition, two circles of gas-liquid recovery holes, namely the first recovery hole and the second recovery hole, are arranged on the control head of the medium liquid control module. Among them, the liquid supply hole is arranged in the innermost circle, surrounding the scanning probe; the gas supply hole is arranged in the outer circle of the liquid supply hole; the first recovery hole is arranged between the liquid supply hole and the gas supply hole; and the second recovery hole is arranged in the outer circle of the gas supply hole, that is, the second recovery hole is arranged in the outermost circle.
[0051] In this way, combined Figure 5 and Figure 6 After the dielectric liquid is injected through the liquid supply hole, two circles of liquid circulation are formed inward and outward respectively, namely, the liquid inner circulation and the liquid outer circulation. Correspondingly, after the gas is introduced through the gas supply hole, two circles of gas circulation are formed inward and outward respectively, namely, the gas inner circulation and the gas outer circulation. The gas supply hole is arranged in the outer circle of the liquid supply hole, and a wind flow can be formed in the outer circle to limit the injection area of the dielectric liquid. The first recovery hole is arranged between the liquid supply hole and the gas supply hole, and the dielectric liquid and gas on both sides of the inner and outer sides can be effectively recovered. The second recovery hole is arranged in the outermost circle, and the dielectric liquid and gas that overflow to the outermost side can be recovered to prevent the dielectric liquid and gas from overflowing to other chips and avoid adverse effects on other chips.
[0052] In some embodiments of the present application, reference Figure 5 The gas supply hole is inclined toward the scanning probe, that is, the gas supply hole is inclined inward. An angle a between the gas supply hole and the surface of the control head is greater than 55° and less than 65°.
[0053] It is understandable that if the gas supply hole is inclined inward, the flow direction of the gas introduced is inclined inward, which is conducive to limiting the coverage area of the medium liquid. The angle a is greater than 55° and less than 65°, which is a preferred range, and can ensure that the coverage area of the medium liquid is limited while preventing the medium liquid from being blown too far into the middle position.
[0054] The present application also provides a defect detection method. Figure 7 As shown, the defect detection method includes steps S101 to S103.
[0055] S101, moving the scanning probe to just above the target wafer.
[0056] S102 , injecting dielectric liquid into the upper surface of the target wafer, and limiting the dielectric liquid to the upper surface of the target wafer.
[0057] S103, performing defect detection on the area where the target wafer is located.
[0058] In an embodiment of the present application, when defect detection begins in the area where the target chip is located, the scanning probe will move to directly above the target chip; then, the dielectric liquid control module will inject dielectric liquid into the upper surface of the target chip, so that the dielectric liquid submerges the scanning probe and confines the dielectric liquid to the upper surface of the target chip; then, the scanning probe can be used to perform defect detection on the area where the target chip is located.
[0059] It can be understood that during the defect detection process, the dielectric liquid is limited to the upper surface of the target chip to prevent the dielectric liquid from immersing the sides of the target chip and other chips. In this way, while ensuring the smooth progress of defect detection, the adverse effects caused by the penetration of the dielectric liquid are avoided, thereby improving the product yield.
[0060] In some embodiments of the present application, Figure 8 Step S1021 is shown to achieve Figure 7 Step S102 is shown.
[0061] S1021, injecting dielectric liquid into the upper surface of the target wafer, and introducing gas around the target wafer to form wind flow, so as to confine the dielectric liquid to the upper surface of the target wafer.
[0062] In the embodiment of the present application, the dielectric liquid control module can inject gas around the target wafer to form wind flow while injecting the dielectric liquid into the upper surface of the target wafer, thereby limiting the dielectric liquid to the upper surface of the target wafer.
[0063] It can be understood that by introducing gas around the target chip to form a wind flow, the surface tension of the wind flow and the dielectric liquid can be used to limit the dielectric liquid to the upper surface of the target chip, thereby preventing the dielectric liquid from immersing the sides of the target chip and other chips. In this way, while ensuring the smooth progress of defect detection, the adverse effects caused by the penetration of the dielectric liquid are avoided, thereby improving the product yield.
[0064] In some embodiments of the present application, Fig. 9 As shown, the defect detection method further includes step S104.
[0065] S104, recovering the gas and dielectric liquid on the target wafer.
[0066] In the embodiment of the present application, after the defect detection of the target wafer area is completed, the gas-liquid recovery unit performs liquid recovery and gas recovery to recover the gas and dielectric liquid on the target wafer. In this way, the dielectric liquid can be prevented from flowing into other areas, thereby avoiding the adverse effects caused by the penetration of the dielectric liquid and improving the product yield.
[0067] The present application also provides an ultrasonic microscope. Fig.10 As shown, the ultrasonic microscope 20 includes a defect detection device 10. The defect detection device 10 includes the technical features of the above-mentioned embodiments.
[0068] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element.
[0069] The serial numbers of the embodiments of the present application are for description only and do not represent the advantages and disadvantages of the embodiments. The methods disclosed in the several method embodiments provided in this application can be arbitrarily combined without conflict to obtain new method embodiments. The features disclosed in the several product embodiments provided in this application can be arbitrarily combined without conflict to obtain new product embodiments. The features disclosed in the several method or device embodiments provided in this application can be arbitrarily combined without conflict to obtain new method embodiments or device embodiments.
[0070] The above description is only a specific implementation manner of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application.
Claims
1. A defect detection device, characterized in that: The defect detection device comprises: a scanning probe and a medium liquid control module; The control head of the medium liquid control module is arranged on the scanning probe and surrounds the side wall of the scanning probe; When the scanning probe moves to the top of the target wafer, the dielectric liquid control module injects dielectric liquid into the upper surface of the target wafer and limits the dielectric liquid to the upper surface of the target wafer to perform defect detection on the area where the target wafer is located.
2. The defect detection device according to claim 1, characterized in that: The medium liquid control module includes: a medium liquid supply unit, a gas supply unit and a gas-liquid recovery unit; The medium liquid supply unit is configured to inject the medium liquid into the upper surface of the target wafer; The gas supply unit is configured to pass gas around the target wafer to form a wind flow, so as to limit the medium liquid to the upper surface of the target wafer; The gas-liquid recovery unit is configured to recover the gas and the dielectric liquid on the target wafer after defect detection is performed on the area where the target wafer is located.
3. The defect detection device according to claim 2, characterized in that: The medium liquid supply unit comprises: a liquid supply hole, a liquid supply pipe and a liquid storage tank; The gas supply unit comprises: a gas supply hole, a gas supply pipe and a gas source; The gas-liquid recovery unit comprises: a gas-liquid recovery hole, a gas-liquid recovery pipe and a vacuum source; The liquid supply hole, the gas supply hole and the gas-liquid recovery hole are all arranged on the control head of the medium liquid control module; the liquid supply hole, the gas supply hole and the gas-liquid recovery hole are respectively arranged in a ring around the scanning probe.
4. The defect detection device according to claim 3, characterized in that: The gas-liquid recovery hole comprises: a first recovery hole and a second recovery hole; The liquid supply hole, the first recovery hole, the gas supply hole and the second recovery hole are sequentially arranged in a ring around the scanning probe from the inside to the outside.
5. The defect detection device according to any one of claims 1 to 4, characterized in that: The scanning probe protrudes out of the control head of the medium liquid control module.
6. The defect detection device according to claim 3 or 4, characterized in that: The gas supply hole is inclined toward the scanning probe; and the angle between the gas supply hole and the surface of the control head is greater than 55° and less than 65°.
7. A defect detection method, characterized in that: The defect detection method comprises: Move the scanning probe to just above the target wafer; Injecting a dielectric liquid into the upper surface of the target wafer and confining the dielectric liquid to the upper surface of the target wafer; Defect detection is performed on the area where the target wafer is located.
8. The defect detection method according to claim 7, characterized in that: The method of limiting the medium liquid to the upper surface of the target wafer comprises: Gas is introduced around the target wafer to form a wind flow, so that the medium liquid is confined to the upper surface of the target wafer.
9. The defect detection method according to claim 7 or 8, characterized in that: After performing defect detection on the area where the target wafer is located, the defect detection method further includes: The gas and the medium liquid on the target wafer are recovered.
10. An ultrasonic microscope, characterized in that: The ultrasonic microscope includes the defect detection device according to any one of claims 1 to 6.