Analog simulation method, device, equipment and medium for chemical vapor deposition

Abstract

The invention discloses an analog simulation method, device, equipment and medium for chemical vapor deposition, and relates to the field of integrated circuit advanced manufacturing process simulation, the analog simulation method for chemical vapor deposition comprises the following steps: importing a chemical vapor deposition simulation model which comprises deposition particles and a substrate, the deposition particles are used for being deposited in a deposition area of the substrate; according to preset simulation parameters, the chemical vapor deposition simulation model is operated, and the real-time temperature of the substrate is obtained; under the condition that the real-time temperature of the substrate is stabilized at a preset temperature threshold value, generating a velocity vector of the deposition particles distributed according to cosine based on a receiving rejection sampling method; and inputting the velocity vector of the deposition particles and the coordinates of the deposition particles randomly generated in the deposition area into the chemical vapor deposition model, and continuing to operate the chemical vapor deposition simulation model.

Description

Technical Field

[0001] The present invention relates to the field of integrated circuit advanced manufacturing process simulation, and in particular to a chemical vapor deposition simulation method, device, equipment and medium. Background Art

[0002] The thin film deposition process is a key process in the large-scale integrated circuit manufacturing process. In the manufacturing process, many different types of thin films will be deposited on the micro-nano structure on the silicon wafer in the front-end process and the back-end process, and the pattern transfer is realized together with the photolithography and etching processes. In some cases, these thin films become an integral part of the device structure, while other thin films act as sacrifices in the process and are removed in subsequent processes.

[0003] There are many technologies for depositing thin films on silicon wafer substrates, among which the main deposition methods can be divided into physical vapor deposition (PVD) and chemical vapor deposition (CVD). Among them, the CVD process includes plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), atomic layer deposition (ALD), etc. Among them, PECVD is widely used due to its low temperature, fast deposition rate, good step coverage, and strong gap filling ability.

[0004] In existing plasma vapor deposition simulations, the desired deposition particles are mostly injected vertically directly above the flat substrate, but simple vertical injection cannot truly reflect the movement of isotropic and anisotropic deposition particles in the plasma chemical vapor deposition process. Therefore, how to implement plasma vapor deposition simulation to truly reflect the movement of isotropic and anisotropic deposition particles in the plasma chemical vapor deposition process has become a technical problem that technicians in this field need to solve urgently. Summary of the invention

[0005] In view of the above technical status, the present invention provides a simulation method, device, equipment and medium for chemical vapor deposition.

[0006] In order to achieve the above object, the present invention provides the following technical solutions:

[0007] A simulation method for chemical vapor deposition, comprising:

[0008] Importing a chemical vapor deposition simulation model, the chemical vapor deposition simulation model comprising: deposition particles and a substrate, the deposition particles being used to be deposited in a deposition region of the substrate;

[0009] According to preset simulation parameters, the chemical vapor deposition simulation model is run to obtain the real-time temperature of the substrate;

[0010] When the real-time temperature of the substrate is stabilized at a preset temperature threshold, generating a velocity vector of the deposited particles according to a cosine distribution based on a reception rejection sampling method;

[0011] The velocity vector of the deposited particle and the coordinates of the deposited particle randomly generated in the deposition area are input into the chemical vapor deposition model, and the chemical vapor deposition simulation model is continuously run.

[0012] In an optional implementation of the present application, it also includes:

[0013] Obtaining the first position coordinates of each atom in the chemical vapor deposition simulation model, and randomly generating the second position coordinates of each of the deposited particles corresponding to the three-dimensional coordinate system of the deposition area;

[0014] For any of the deposited particles, determining whether the distance between the second position coordinate of the deposited particle and each of the first position coordinates, and the distance between the second position coordinates of the deposited particle and other deposited particles is less than a preset distance threshold;

[0015] In the case where the difference between the second position coordinate of the deposited particle and each of the first position coordinates, and the difference between the second position coordinates of the deposited particle and other deposited particles is less than a preset distance threshold, the second position coordinate of the deposited particle is randomly regenerated, and it is returned to determine whether the difference between the second position coordinate of the deposited particle and each of the first position coordinates, and the difference between the second position coordinates of the deposited particle and other deposited particles is less than the preset distance threshold;

[0016] When the distance between the second position coordinate of the deposited particle and the first position, and the distance between the deposited particle and other deposited particles is greater than or equal to a preset distance threshold, the second position coordinate is used as the position coordinate of the deposited particle in the chemical vapor deposition simulation model.

[0017] In an optional embodiment of the present application, the angle between the velocity vector of the deposited particle and the negative direction of the z-axis of the three-dimensional coordinate system of the deposition area obeys the following cosine distribution:

[0018] f(θ)=2(1+cos2θ) / π;

[0019] Wherein, θ represents the angle between the velocity vector of the deposited particle and the negative direction of the z-axis of the three-dimensional coordinate system of the deposition area; 0≤θ<π / 2.

[0020] In an optional embodiment of the present application, the velocity vector of the deposited particles is generated based on a uniform distribution method at an angle between an xoy plane and a z axis of a three-dimensional coordinate system of the deposition area.

[0021] In an optional implementation manner of the present application, the simulation parameters include:

[0022] The ensemble of the chemical vapor deposition simulation model is set to be an isothermal and isochoric canonical ensemble;

[0023] Setting periodic boundary conditions in the horizontal direction of the chemical vapor deposition simulation model and using open boundary conditions in the vertical direction;

[0024] The force on the bottom of the substrate of the chemical vapor deposition simulation model is set to zero.

[0025] Compared with the prior art, the chemical vapor deposition simulation method provided by the present invention generates a velocity vector of the deposited particles according to a cosine distribution based on a reception rejection sampling method when the real-time temperature of the substrate is stabilized at a preset temperature threshold. This enables the velocity of the deposited particles to be generated according to a certain statistical probability distribution during the chemical vapor deposition simulation process, thereby realizing molecular dynamics simulation of non-planar substrates, which is conducive to better reflecting the motion state of the actual gas, improving the reliability of the simulation, and more realistically reflecting the influence of the substrate structure on the thin film deposition effect.

[0026] The present invention also provides a simulation device for chemical vapor deposition, comprising:

[0027] A model importing unit, used for importing a chemical vapor deposition simulation model, wherein the chemical vapor deposition simulation model comprises: deposition particles and a substrate, wherein the deposition particles are used for being deposited in a deposition region of the substrate;

[0028] A first simulation unit, used to run the chemical vapor deposition simulation model according to preset simulation parameters and obtain the real-time temperature of the substrate;

[0029] A speed setting unit, configured to generate a speed vector of the deposited particles according to a cosine distribution based on a reception rejection sampling method when the real-time temperature of the substrate is stabilized at a preset temperature threshold;

[0030] The second simulation unit is used to input the velocity vector of the deposited particles and the coordinates of the deposited particles randomly generated in the deposition area into the chemical vapor deposition model, and continue to run the chemical vapor deposition simulation model.

[0031] Compared with the prior art, the beneficial effects of the chemical vapor deposition simulation device provided by the present invention are the same as the beneficial effects of the chemical vapor deposition simulation method described in the above technical solution, which will not be elaborated here.

[0032] The present invention also provides an electronic device, comprising:

[0033] processor;

[0034] a memory for storing instructions executable by the processor;

[0035] The processor is used to execute the above-mentioned chemical vapor deposition simulation method by running the instructions in the memory.

[0036] Compared with the prior art, the beneficial effects of the electronic device provided by the present invention are the same as the beneficial effects of the simulation method of chemical vapor deposition described in the above technical solution, which will not be described in detail here.

[0037] The present invention also provides a computer storage medium, in which instructions are stored. When the instructions are executed, the above-mentioned chemical vapor deposition simulation method is implemented.

[0038] Compared with the prior art, the beneficial effects of the computer storage medium provided by the present invention are the same as the beneficial effects of the simulation method of chemical vapor deposition described in the above technical solution, and will not be elaborated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0040] Figure 1 A flow chart of a simulation method for chemical vapor deposition provided in an embodiment of the present application;

[0041] Figure 2 A schematic diagram of selecting a deposition particle velocity direction vector provided in an embodiment of the present application;

[0042] Figure 3 A structural diagram of a simulation device for chemical vapor deposition provided in an embodiment of the present application;

[0043] Figure 4 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0044] In order to clearly describe the technical solutions of the embodiments of the present invention, in the embodiments of the present invention, words such as "first" and "second" are used to distinguish the same items or similar items with basically the same functions and effects. For example, the first threshold and the second threshold are only used to distinguish different thresholds, and their order is not limited. Those skilled in the art can understand that words such as "first" and "second" do not limit the quantity and execution order, and words such as "first" and "second" do not necessarily limit them to be different.

[0045] It should be noted that, in the present invention, words such as "exemplary" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the present invention should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0046] In the present invention, "at least one" means one or more, and "plurality" means two or more. "And / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone, where A and B can be singular or plural. The character " / " generally indicates that the associated objects before and after are in an "or" relationship. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items. For example, at least one of a, b or c can mean: a, b, c, the combination of a and b, the combination of a and c, the combination of b and c, or the combination of a, b and c, where a, b, c can be single or multiple.

[0047] The thin film deposition process is a key process in the large-scale integrated circuit manufacturing process. In the manufacturing process, many different types of thin films will be deposited on the micro-nano structure on the silicon wafer in the front-end process and the back-end process, and the pattern transfer is realized together with the lithography and etching processes. In some cases, these films become a completed part of the device structure, while other films act as sacrifices in the process and are removed in subsequent processes.

[0048] There are many technologies for depositing thin films on silicon wafer substrates, among which the main deposition methods can be divided into physical vapor deposition (PVD) and chemical vapor deposition (CVD). Among them, the CVD process includes plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), atomic layer deposition (ALD), etc. Among them, PECVD is widely used due to its low temperature, fast deposition rate, good step coverage, and strong gap filling ability.

[0049] With the continuous advancement of integrated circuit advanced manufacturing process nodes, the device structure feature size is also shrinking, and some small size limitation effects have emerged. Traditional process simulation tools are no longer applicable. In recent years, with the development of artificial intelligence technology and the improvement of computing power, atomic-scale molecular dynamics simulation methods have gradually attracted attention. Through molecular dynamics simulation, the spatiotemporal evolution of particles in the system can be obtained, so as to analyze the physical properties and chemical behavior of the system. The core idea of ​​molecular dynamics is to simulate the motion of particles based on the principles of classical mechanics and Newton's second law. Under given initial conditions (such as position and velocity), the trajectory of the particle evolution over time is simulated under the force of the particle (such as intermolecular force, electromagnetic force, etc.).

[0050] There are two advantages to using analytical dynamics to simulate thin film deposition processes. First, it is possible to study microscopic dynamics from the perspective of microscopic particle cluster behavior, analyze substrate structure effects, surface diffusion phenomena, and even chemical bond structures, which are difficult to do experimentally. On the other hand, molecular dynamics can obtain information such as deposition rate and film density through statistical analysis, and can reveal its variation with key process parameters such as deposition time, temperature, pressure, and gas composition. These process parameters can also be coupled to the model of characteristic size, thereby achieving multi-scale simulation.

[0051] In existing plasma vapor deposition simulations, the required deposition particles are mostly injected vertically directly above the flat substrate, but simple vertical injection cannot truly reflect the movement of isotropic and anisotropic deposition particles in the plasma chemical vapor deposition process. Therefore, how to implement plasma vapor deposition simulation to truly reflect the movement of isotropic and anisotropic deposition particles in the plasma chemical vapor deposition process has become a technical problem that technicians in this field need to solve urgently.

[0052] In order to solve the above technical problems, the present application provides a simulation method, device, equipment and medium for chemical vapor deposition, which are described in detail one by one in the following embodiments.

[0053] The embodiment of the present application first provides a simulation method for chemical vapor deposition. The core of the method is that when using analytical dynamics simulation software to perform plasma enhanced chemical vapor deposition simulation, the direction of particle movement speed is set according to the cosine distribution during the process of processing deposited particles. Therefore, in the process of simulating non-planar substrate structures (such as nanostructures such as grooves and steps), the actual gas movement state can be normally reflected, the reliability of the simulation is improved, and the influence of different substrate structures on the thin film deposition effect is more realistically reflected.

[0054] Please refer to Figure 1 , Figure 1 A flow chart of a simulation method for chemical vapor deposition provided in an embodiment of the present application.

[0055] like Figure 1 As shown, the chemical vapor deposition simulation method includes the following S101 to S104:

[0056] S101, importing a chemical vapor deposition simulation model, wherein the chemical vapor deposition simulation model includes: deposition particles and a substrate, wherein the deposition particles are used to be deposited in a deposition region of the substrate.

[0057] The chemical vapor deposition simulation model can be understood as a simulation model of plasma-enhanced chemical vapor deposition (PECVD), which is used to simulate and predict physical and chemical phenomena in the PECVD process.

[0058] In the process of practical application, it is necessary to generate the required deposition particle structure file and substrate structure file to construct the deposition particles and substrate of the chemical vapor deposition simulation model. Among them, the deposition particle structure file can be modeled by Materials Studio (MS) software, and the appropriate structure optimization method is selected according to the structure of different particles (such as molecules, atoms, particles and free radicals), and exported to a readable LAMMPS format. The substrate structure file can be modeled and energy minimized using MS software, or the create_atoms command in LAMMPS can be used to directly add substrate atoms in the specified area.

[0059] S102, running the chemical vapor deposition simulation model according to preset simulation parameters, and obtaining the real-time temperature of the substrate.

[0060] In the embodiment of the present application, the setting of the simulation parameters includes: ensemble setting, potential function, boundary conditions, external force setting, etc.

[0061] The ensemble is used to describe a collection of microscopic states, including microcanonical ensemble, canonical ensemble, grand canonical ensemble, etc. In practical applications, the ensemble setting can be selected according to the specific type of simulation. For example, for thin film deposition simulation, the ensemble can be set to a canonical system (NVT) to maintain the number of particles and volume of the system unchanged and heat the system to a specified temperature.

[0062] The potential function is used to describe the interaction force between particles in the system, thereby simulating the movement of particles. Considering that PECVD involves chemical reactions, potential functions suitable for chemical processes should be selected, such as ReaxFF, Tersoff, DeePMD, etc.

[0063] Boundary conditions are used to define the processing parameters at the edge of the simulation system. In the field of chemical vapor deposition simulation, the boundary conditions include periodic boundary conditions, fixed boundary conditions, open boundary conditions, etc. In the process of chemical vapor deposition simulation, the main research object is the deposition process of thin film on the substrate. Therefore, the settings on the boundary conditions include: in the xy direction, periodic boundary conditions are used to simulate the infinite substrate plane; in the z direction, open boundary conditions are used to simulate the process of gas entering from the inlet and leaving from the outlet; fixed boundary conditions are used to fix the substrate atoms to ensure the stability of the substrate. In an optional embodiment of the present application, the fix setforece instruction can also be used to set the force on the atoms at the bottom of the substrate to zero, thereby fixing the substrate.

[0064] S103 , when the real-time temperature of the substrate is stabilized at a preset temperature threshold, generating a velocity vector of the deposited particles according to a cosine distribution based on a reception rejection sampling method.

[0065] After the chemical vapor simulation model is established and the parameters are set, the simulation can be performed for a period of time until the substrate temperature is stabilized at a preset temperature threshold, and then the motion simulation of the deposited particles is performed.

[0066] Before generating the velocity vector of the deposited particle, firstly, the position of the deposited particle in the chemical vapor simulation model is generated.

[0067] Specifically, the method further includes S1 to S4:

[0068] S1, obtaining the first position coordinates of each atom in the chemical vapor deposition simulation model, and randomly generating the second position coordinates of each of the deposited particles corresponding to the three-dimensional coordinate system of the deposition area;

[0069] S2, for any one of the deposited particles, determining whether the distance between the second position coordinate of the deposited particle and each of the first position coordinates, and the distance between the second position coordinates of the deposited particle and other deposited particles is less than a preset distance threshold;

[0070] S3, when the difference between the second position coordinate of the deposited particle and each of the first position coordinates, and the difference between the second position coordinates of the deposited particle and other deposited particles is less than a preset distance threshold, randomly regenerate the second position coordinate of the deposited particle, and return to determine whether the difference between the second position coordinate of the deposited particle and each of the first position coordinates, and the difference between the second position coordinates of the deposited particle and other deposited particles is less than a preset distance threshold;

[0071] S4. When the distance between the second position coordinate of the deposited particle and the first position, and the distance between the deposited particle and other deposited particles is greater than or equal to a preset distance threshold, the second position coordinate is used as the position coordinate of the deposited particle in the chemical vapor deposition simulation model.

[0072] In a chemical vapor deposition reaction, the reaction gas is transported to the substrate surface by diffusion and undergoes a chemical reaction under appropriate conditions to generate deposited particles. For example, in the CVD process of silicon, silane decomposes into silicon atoms and hydrogen at high temperatures, and the silicon atoms are deposited on the substrate surface to form a silicon film.

[0073] However, in the actual application process, the reaction gas in the chemical vapor deposition reaction bombards the substrate and generates corresponding atoms. However, due to the mutual repulsion between atoms, it is necessary to avoid the distance between the random position coordinates of the deposited particles and the position coordinates of the atoms being too close, and to avoid the distance between the position coordinates of the deposited particles being too close.

[0074] Therefore, it is necessary to first determine the first position coordinates of each atom in the chemical vapor deposition simulation model, and then determine whether the difference between the second position coordinates randomly obtained by each deposited particle and the first position coordinates, as well as the difference between each deposited particle is greater than or less than a preset distance threshold. If the distance is less than the preset distance threshold, the coordinates of the particles are randomly deposited again until the distance between all deposited particles and the distance between the deposited particles and the atoms meet the distance threshold.

[0075] After the position of the deposited particle is set, a corresponding velocity vector may be assigned to the deposited particle, so that the deposited particle moves according to the velocity vector, thereby reflecting the actual motion state of the gas.

[0076] Specifically, the velocity vector of the deposited particles may be generated based on an acceptance rejection sampling method.

[0077] The Acceptance-Rejection Sampling method is a Monte Carlo method for generating random samples from probability distributions that are complex or difficult to sample directly.

[0078] Among them, when only the particles moving toward the substrate are considered, the angle θ between the velocity vector V of the deposited particles and the negative direction of the z-axis is approximately a cosine distribution, that is:

[0079] f(θ)=2(1+cos2θ) / π; 0≤θ<π / 2.

[0080] Furthermore, the velocity vector of the deposited particles obeys a uniform distribution in all directions in the xoy plane, that is, the angle α between the velocity vector of the deposited particles and the positive direction of the x-axis is uniformly distributed within a range of 0 to 2π.

[0081] Please refer to Figure 2 , Figure 2 A schematic diagram of the selection of the deposition particle velocity direction vector provided in an embodiment of the present application.

[0082] like Figure 2 As shown, a random angle α is generated, and the velocity direction component v of the velocity vector V in the x-axis direction is x = sinα, the velocity direction component of the velocity vector V in the y-axis direction is v y =cosα, then according to The velocity direction component v of the velocity vector V in the z-axis direction can be obtained z , and then obtain the velocity direction vector (v x , v y , v z ), and then convert it into unit, we can get: v = v x ,v y ,v z ) / sqrt(1+v z 2 ).

[0083] Furthermore, a velocity magnitude V1 is randomly assigned to the deposited particles, and the velocity vector V=V1*v.

[0084] In the actual application process, the step of generating the velocity vector of the deposited particles according to the cosine distribution based on the reception rejection sampling method can also be implemented by the following algorithm code:

[0085]

[0086] S104, inputting the velocity vector of the deposited particles and the coordinates of the deposited particles randomly generated in the deposition area into the chemical vapor deposition model, and continuing to run the chemical vapor deposition simulation model.

[0087] After the velocity vector and the coordinate position of the deposition particle are determined, the velocity vector and the coordinate of the deposition particle can be input into the chemical vapor deposition model, so that the chemical vapor deposition model continues to run until the expected deposition target is achieved.

[0088] To summarize, the chemical vapor deposition simulation method provided in the embodiment of the present application generates a velocity vector of the deposited particles according to a cosine distribution based on a reception rejection sampling method when the real-time temperature of the substrate is stabilized at a preset temperature threshold. This allows the velocity of the deposited particles to be generated according to a certain statistical probability distribution during the chemical vapor deposition simulation process, thereby realizing molecular dynamics simulation of non-planar substrates, which is conducive to better reflecting the motion state of the actual gas, improving the reliability of the simulation, and more realistically reflecting the influence of the substrate structure on the thin film deposition effect.

[0089] This application also provides a simulation device for chemical vapor deposition, please refer to Figure 3 , Figure 3 This is a structural diagram of a simulation device for chemical vapor deposition provided in an embodiment of the present application.

[0090] like Figure 3 As shown, the chemical vapor deposition simulation device comprises:

[0091] The model importing unit 301 is used to import a chemical vapor deposition simulation model, wherein the chemical vapor deposition simulation model includes: deposition particles and a substrate, wherein the deposition particles are used to be deposited in a deposition area of ​​the substrate;

[0092] A first simulation unit 302, used to run the chemical vapor deposition simulation model according to preset simulation parameters and obtain the real-time temperature of the substrate;

[0093] A speed setting unit 303, configured to generate a speed vector of the deposited particles according to a cosine distribution based on a reception rejection sampling method when the real-time temperature of the substrate is stabilized at a preset temperature threshold;

[0094] The second simulation unit 304 is used to input the velocity vector of the deposited particles and the coordinates of the deposited particles randomly generated in the deposition area into the chemical vapor deposition model, and continue to run the chemical vapor deposition simulation model.

[0095] In an optional embodiment of the present application, the device is also used for:

[0096] Obtaining the first position coordinates of each atom in the chemical vapor deposition simulation model, and randomly generating the second position coordinates of each of the deposited particles corresponding to the three-dimensional coordinate system of the deposition area;

[0097] For any of the deposited particles, determining whether the distance between the second position coordinate of the deposited particle and each of the first position coordinates, and the distance between the second position coordinates of the deposited particle and other deposited particles is less than a preset distance threshold;

[0098] In the case where the difference between the second position coordinate of the deposited particle and each of the first position coordinates, and the difference between the second position coordinates of the deposited particle and other deposited particles is less than a preset distance threshold, the second position coordinate of the deposited particle is randomly regenerated, and it is returned to determine whether the difference between the second position coordinate of the deposited particle and each of the first position coordinates, and the difference between the second position coordinates of the deposited particle and other deposited particles is less than the preset distance threshold;

[0099] When the distance between the second position coordinate of the deposited particle and the first position, and the distance between the deposited particle and other deposited particles is greater than or equal to a preset distance threshold, the second position coordinate is used as the position coordinate of the deposited particle in the chemical vapor deposition simulation model.

[0100] In an optional embodiment of the present application, the angle between the velocity vector of the deposited particle and the negative direction of the z-axis of the three-dimensional coordinate system of the deposition area obeys the following cosine distribution:

[0101] f(θ)=2(1+cos2θ) / π;

[0102] Wherein, θ represents the angle between the velocity vector of the deposited particle and the negative direction of the z-axis of the three-dimensional coordinate system of the deposition area; 0≤θ<π / 2.

[0103] In an optional embodiment of the present application, the velocity vector of the deposited particles is generated based on a uniform distribution method at an angle between an xoy plane and a z axis of a three-dimensional coordinate system of the deposition area.

[0104] In an optional implementation manner of the present application, the simulation parameters include:

[0105] The ensemble of the chemical vapor deposition simulation model is set to be an isothermal and isochoric canonical ensemble;

[0106] Setting periodic boundary conditions in the horizontal direction of the chemical vapor deposition simulation model and using open boundary conditions in the vertical direction;

[0107] The force on the bottom of the substrate of the chemical vapor deposition simulation model is set to zero.

[0108] The above-mentioned device embodiment provided in this embodiment and the method embodiment of the present application belong to the same application concept. For the technical details not fully described in this embodiment, please refer to the specific processing content of the simulation method of chemical vapor deposition provided in the above-mentioned embodiment of the present application, which will not be repeated here.

[0109] The present application also provides an electronic device, such as Figure 4 As shown, Figure 4 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application.

[0110] like Figure 4 As shown, the electronic device comprises:

[0111] Processor 210;

[0112] A memory 200 for storing instructions executable by the processor 210;

[0113] The processor 210 is used to execute the chemical vapor deposition simulation method disclosed in any of the above embodiments by running the instructions in the memory 200.

[0114] The processor 210, the memory 200, the communication interface 220, the input device 230 and the output device 240 are connected to each other via a bus.

[0115] A bus may include a pathway that transfers information between components of a computer system.

[0116] The processor 210 may be a general-purpose processor, such as a general-purpose central processing unit (CPU), a microprocessor, etc., or an application-specific integrated circuit (ASIC), or one or more integrated circuits for controlling the execution of the program of the scheme of the present invention. It may also be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components.

[0117] The processor 210 may include a main processor, and may also include a baseband chip, a modem, and the like.

[0118] The memory 200 stores a program for executing the technical solution of the present invention, and may also store an operating system and other key services. Specifically, the program may include a program code, and the program code includes a computer operation instruction. More specifically, the memory 200 may include a read-only memory (ROM), other types of static storage devices that can store static information and instructions, a random access memory (RAM), other types of dynamic storage devices that can store information and instructions, a disk storage, a flash, and the like.

[0119] The input device 230 may include a device for receiving data and information input by a user, such as a keyboard, a mouse, a camera, a scanner, a touch screen, etc.

[0120] Output device 240 may include devices that allow information to be output to a user, such as a display screen, printer, speaker, etc.

[0121] The communication interface 220 may include any transceiver or the like to communicate with other devices or communication networks, such as Ethernet, Radio Access Network (RAN), Wireless Local Area Network (WLAN), etc.

[0122] The processor 210 executes the program stored in the memory 200 and calls other devices, and can be used to implement each step of any chemical vapor deposition simulation method provided in the above embodiments of the present application.

[0123] In addition to the above-mentioned methods and devices, an embodiment of the present application may also be a computer program product, which includes computer program instructions, which, when executed by a processor, enable the processor to execute the steps in the chemical vapor deposition simulation method of various embodiments of the present application.

[0124] The computer program product may be written in any combination of one or more programming languages ​​to write program codes for performing the operations of the embodiments of the present application, including object-oriented programming languages, such as Java, C++, etc., and conventional procedural programming languages, such as "C" language or similar programming languages. The program code may be executed entirely on the user computing device, partially on the user device, as an independent software package, partially on the user computing device and partially on a remote computing device, or entirely on a remote computing device or server.

[0125] In addition, an embodiment of the present application may also be a storage medium on which a computer program is stored, and the computer program is executed by a processor to execute the steps in the simulation method of chemical vapor deposition in various embodiments of the present application.

[0126] For the aforementioned method embodiments, for the sake of simplicity, they are all described as a series of action combinations, but those skilled in the art should be aware that the present application is not limited by the order of the actions described, because according to the present application, some steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all preferred embodiments, and the actions and modules involved are not necessarily required by the present application.

[0127] It should be noted that each embodiment in this specification is described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other. For the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0128] The steps in the methods of each embodiment of the present application can be adjusted in order, combined and deleted according to actual needs, and the technical features recorded in each embodiment can be replaced or combined.

[0129] The modules and sub-modules in the devices and terminals in the various embodiments of the present application can be combined, divided and deleted according to actual needs.

[0130] In the several embodiments provided in the present application, it should be understood that the disclosed terminals, devices and methods can be implemented in other ways. For example, the terminal embodiments described above are only schematic, for example, the division of modules or submodules is only a logical function division, and there may be other division methods in actual implementation, for example, multiple submodules or modules can be combined or integrated into another module, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interfaces, devices or modules, which can be electrical, mechanical or other forms.

[0131] The modules or submodules described as separate components may or may not be physically separated, and the components of the modules or submodules may or may not be physical modules or submodules, that is, they may be located in one place, or they may be distributed on multiple network modules or submodules. Some or all of the modules or submodules may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0132] In addition, each functional module or submodule in each embodiment of the present application may be integrated into one processing module, or each module or submodule may exist physically separately, or two or more modules or submodules may be integrated into one module. The above-mentioned integrated modules or submodules may be implemented in the form of hardware or in the form of software functional modules or submodules.

[0133] Professionals may further appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of the two. In order to clearly illustrate the interchangeability of hardware and software, the composition and steps of each example have been generally described in the above description according to function. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professionals and technicians may use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of this application.

[0134] The steps of the method or algorithm described in conjunction with the embodiments disclosed herein may be implemented directly by hardware, software units executed by a processor, or a combination of the two. The software units may be placed in a random access memory (RAM), a memory, a read-only memory (ROM), an electrically programmable ROM, an electrically erasable programmable ROM, a register, a hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art.

[0135] Finally, it should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0136] The above description of the disclosed embodiments enables those skilled in the art to implement or use the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application will not be limited to the embodiments shown herein, but will conform to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A simulation method for chemical vapor deposition, characterized in that: include: Importing a chemical vapor deposition simulation model, the chemical vapor deposition simulation model comprising: deposition particles and a substrate, the deposition particles being used to be deposited in a deposition region of the substrate; According to preset simulation parameters, the chemical vapor deposition simulation model is run to obtain the real-time temperature of the substrate; When the real-time temperature of the substrate is stabilized at a preset temperature threshold, generating a velocity vector of the deposited particles according to a cosine distribution based on a reception rejection sampling method; The velocity vector of the deposited particle and the coordinates of the deposited particle randomly generated in the deposition area are input into the chemical vapor deposition model, and the chemical vapor deposition simulation model is continuously run.

2. The method according to claim 1, characterized in that Also includes: Obtaining the first position coordinates of each atom in the chemical vapor deposition simulation model, and randomly generating the second position coordinates of each of the deposited particles corresponding to the three-dimensional coordinate system of the deposition area; For any one of the deposited particles, determining whether the distance between the second position coordinate of the deposited particle and each of the first position coordinates, and the distance between the second position coordinates of the deposited particle and other deposited particles is less than a preset distance threshold; In the case where the difference between the second position coordinate of the deposited particle and each of the first position coordinates, and the difference between the second position coordinates of the deposited particle and other deposited particles is less than a preset distance threshold, the second position coordinate of the deposited particle is randomly regenerated, and it is returned to determine whether the difference between the second position coordinate of the deposited particle and each of the first position coordinates, and the difference between the second position coordinates of the deposited particle and other deposited particles is less than the preset distance threshold; When the distance between the second position coordinate of the deposited particle and the first position, and the distance between the deposited particle and other deposited particles is greater than or equal to a preset distance threshold, the second position coordinate is used as the position coordinate of the deposited particle in the chemical vapor deposition simulation model.

3. The method according to claim 1, characterized in that: The angle between the velocity vector of the deposited particle and the negative direction of the z-axis of the three-dimensional coordinate system of the deposition area obeys the following cosine distribution: f(θ)=2(1+cos2θ) / π; Wherein, θ represents the angle between the velocity vector of the deposited particle and the negative direction of the z-axis of the three-dimensional coordinate system of the deposition area; 0≤θ<π / 2.

4. The method according to claim 1, characterized in that The velocity vector of the deposited particle is generated based on a uniform distribution method based on the angle between the xoy plane and the z axis of the three-dimensional coordinate system of the deposition area.

5. The method according to claim 1, characterized in that The simulation parameters include: The ensemble of the chemical vapor deposition simulation model is set to be an isothermal and isochoric canonical ensemble; Setting periodic boundary conditions in the horizontal direction of the chemical vapor deposition simulation model and using open boundary conditions in the vertical direction; The force on the bottom of the substrate of the chemical vapor deposition simulation model is set to zero.

6. A simulation device for chemical vapor deposition, characterized in that: include: A model importing unit, used for importing a chemical vapor deposition simulation model, wherein the chemical vapor deposition simulation model comprises: deposition particles and a substrate, wherein the deposition particles are used for being deposited in a deposition region of the substrate; A first simulation unit, used to run the chemical vapor deposition simulation model according to preset simulation parameters and obtain the real-time temperature of the substrate; A speed setting unit, configured to generate a speed vector of the deposited particles according to a cosine distribution based on a reception rejection sampling method when the real-time temperature of the substrate is stabilized at a preset temperature threshold; The second simulation unit is used to input the velocity vector of the deposited particles and the coordinates of the deposited particles randomly generated in the deposition area into the chemical vapor deposition model, and continue to run the chemical vapor deposition simulation model.

7. An electronic device, characterized in that: include: processor; a memory for storing instructions executable by the processor; The processor is used to execute the chemical vapor deposition simulation method according to any one of claims 1 to 5 by running instructions in the memory.

8. A computer storage medium, characterized in that The computer storage medium stores instructions, and when the instructions are executed, the chemical vapor deposition simulation method according to any one of claims 1 to 5 is executed.

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