Substrate processing apparatus and substrate processing method

Abstract

The invention relates to a substrate processing apparatus and a substrate processing method. This substrate processing apparatus is provided with: at least one peeling gas nozzle that ejects a peeling gas toward the upper surface of a substrate at a first speed, thereby breaking a polymer film by the pressure of the peeling gas such that a peeling part that peels from the upper surface of the substrate and a sealing part that is in sealing contact with the upper surface of the substrate are included in the polymer film, and then spraying the peeling gas toward the upper surface of the substrate at a second speed; changing the adhesion part into a peeling part by using a peeling gas entering between the peeling part and the substrate while spraying the peeling gas to the upper surface of the substrate at a second speed lower than the first speed; and a nozzle actuator that changes the distance from the collision position of the stripping gas with respect to the upper surface of the substrate to the center of the substrate by horizontally moving the at least one stripping gas nozzle.

Description

Technical Field

[0001] The present invention relates to a substrate processing device and a substrate processing method for processing a substrate. The substrate includes, for example, a semiconductor wafer, a liquid crystal display device or an organic EL (electroluminescence) display device, a FPD (Flat Panel Display) substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, a ceramic substrate, a solar cell substrate, etc. Background Art

[0002] JP 2015095583 A discloses a substrate cleaning method and a substrate cleaning system for removing particles from a substrate using a treatment film. In the method and the system, a film-forming treatment liquid for forming a treatment film is supplied to a substrate having a hydrophilic surface. Then, a stripping treatment liquid for stripping the treatment film from the substrate is supplied to the substrate, and a dissolving treatment liquid for dissolving the treatment film is supplied to the substrate.

[0003] However, in the method and system described in JP 201 5095583A, in order to peel the processing film from the substrate, it is necessary to supply the peeling processing liquid to the substrate, which increases the consumption of the processing liquid.

[0004] At least one embodiment of the present invention provides a substrate processing apparatus and a substrate processing method capable of peeling a polymer film from a substrate without using a peeling liquid. Summary of the invention

[0005] One embodiment of the present invention provides a substrate processing device, comprising: a substrate holder horizontally holding a substrate whose upper surface is covered with a solid or semi-solid polymer film; at least one stripping gas nozzle, which sprays stripping gas at a first speed toward the upper surface of the substrate held on the substrate holder, thereby destroying the polymer film by the pressure of the stripping gas in such a manner that a stripping portion stripped from the upper surface of the substrate and a close contact portion with the upper surface of the substrate are included in the polymer film, and then, while spraying the stripping gas at a second speed lower than the first speed toward the upper surface of the substrate held on the substrate holder, the close contact portion is changed into the stripping portion by utilizing the stripping gas that enters between the stripping portion and the substrate; and a nozzle actuator, which changes the distance from the collision position of the stripping gas with respect to the upper surface of the substrate to the center of the substrate by horizontally moving the at least one stripping gas nozzle.

[0006] In the above embodiment, at least one of the following features may be added to the substrate processing apparatus.

[0007] The nozzle actuator causes the at least one stripping gas nozzle to be located at a first ejection position where the stripping gas collides with a non-device forming area on the upper surface of the substrate when the at least one stripping gas nozzle ejects the stripping gas at the first speed, and causes the at least one stripping gas nozzle to be moved to a position where the stripping gas collides with a device forming area on the upper surface of the substrate when the at least one stripping gas nozzle ejects the stripping gas at the second speed.

[0008] The polymer film is a solid or semi-solid film containing a water-soluble polymer; the substrate processing device also includes: a cleaning liquid nozzle, which sprays a cleaning liquid containing water onto the upper surface of the substrate held on the substrate holder after the polymer film is peeled off from the upper surface of the substrate.

[0009] The substrate processing apparatus further includes a cylindrical protector for catching the polymer film and the cleaning liquid that are scattered from the upper surface of the substrate held by the substrate holder to the periphery of the substrate.

[0010] The polymer film is a solid or semisolid film containing a water-soluble polymer; and a contact angle of water with respect to the upper surface of the substrate is greater than or equal to 32 degrees.

[0011] The substrate processing apparatus further includes: a polymer solution nozzle that ejects a polymer solution toward the upper surface of the substrate held by the substrate holder; and a heat source that generates heat that changes a liquid film of the polymer solution on the substrate into the polymer film.

[0012] The at least one stripping gas nozzle ejects the stripping gas toward the upper surface of the substrate held by the substrate holder until the polymer film is stripped from the upper surface of the substrate without being separated as a whole.

[0013] The at least one stripping gas nozzle is a stripping gas nozzle that ejects the stripping gas at the first speed and ejects the stripping gas at the second speed; the substrate processing device also includes: a flow adjustment valve that changes the flow rate of the stripping gas supplied to the one stripping gas nozzle; the one stripping gas nozzle is a variable opening nozzle whose opening area decreases when the flow rate of the stripping gas supplied to the stripping gas nozzle increases, and whose opening area increases when the flow rate of the stripping gas supplied to the stripping gas nozzle decreases.

[0014] The variable-opening nozzle includes: an outer tube, including a nozzle for ejecting the stripping gas; an inner tube, including a front end opening in the outer tube for ejecting the stripping gas; and an elastomer, supporting the inner tube in the outer tube; and when the flow rate of the stripping gas supplied to the outer tube increases to a first flow rate, the elastomer elastically deforms into a first shape in which the front end opening of the inner tube is arranged outside the outer tube when the inner tube is inserted into the nozzle of the outer tube, and when the flow rate of the stripping gas supplied to the outer tube decreases from the first flow rate to a second flow rate, the elastomer returns to a second shape in which the inner tube is entirely arranged in the outer tube.

[0015] Another embodiment of the present invention provides a substrate processing method, comprising: a substrate holding step of horizontally holding a substrate whose upper surface is covered with a solid or semi-solid polymer film; a stripping portion forming step of causing at least one stripping gas nozzle to eject stripping gas toward the upper surface of the substrate at a first speed, thereby destroying the polymer film by the pressure of the stripping gas in such a manner that the stripping portion peeled off from the upper surface of the substrate and the close contact portion close to the upper surface of the substrate are included in the polymer film; and a stripping portion enlarging step of causing at least one stripping gas nozzle to eject the stripping gas toward the upper surface of the substrate at a second speed lower than the first speed while causing the at least one stripping gas nozzle to horizontally move, thereby changing the close contact portion into the stripping portion by using the stripping gas that enters between the stripping portion and the substrate. According to the method, the same effect as that of the substrate processing apparatus can be exerted. At least one of the features related to the substrate processing apparatus may also be added to the substrate processing method. For example, the following features may also be added to the substrate processing method.

[0016] The stripping portion forming process includes the following process: when the at least one stripping gas nozzle sprays the stripping gas at the first speed, the at least one stripping gas nozzle is located at the first spraying position where the stripping gas collides with the non-device forming area on the upper surface of the substrate; the stripping portion expanding process includes the following process: when the at least one stripping gas nozzle sprays the stripping gas at the second speed, the at least one stripping gas nozzle is moved to the position where the stripping gas collides with the device forming area on the upper surface of the substrate.

[0017] The polymer film is a solid or semi-solid film containing a water-soluble polymer; the substrate processing method also includes: a cleaning liquid supply process, after the polymer film is peeled off from the upper surface of the substrate, the cleaning liquid nozzle sprays a cleaning liquid containing water onto the upper surface of the substrate.

[0018] The substrate processing method further includes a catching step of catching the polymer film and the cleaning liquid scattered from the upper surface of the substrate to the periphery of the substrate using a cylindrical protective member.

[0019] The substrate processing method also includes: a polymer solution supplying process, before the stripping portion forming process, the polymer solution nozzle sprays the polymer solution toward the upper surface of the substrate; and a polymer film forming process, using the heat generated by the heat source to change the liquid film of the polymer solution on the substrate into the polymer film.

[0020] The peeling portion enlarging step includes causing the at least one peeling gas nozzle to eject the peeling gas toward the upper surface of the substrate until the polymer film is peeled off from the upper surface of the substrate without being separated as a whole.

[0021] The above and further other objects, features and effects of the present invention will be clarified through the explanation of the embodiments described below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1A It is a schematic plan view showing the layout of a substrate processing apparatus according to one embodiment of the present invention.

[0023] Figure 1B It is a schematic side view of a substrate processing apparatus.

[0024] Figure 2 This is a schematic diagram showing the interior of a processing unit included in the substrate processing apparatus when viewed horizontally.

[0025] Figure 3A -D is a schematic cross-sectional view of the stripping gas nozzle.

[0026] Figure 4 This is a block diagram showing the electrical configuration of a substrate processing apparatus.

[0027] Figure 5 The present invention is a process diagram for explaining an example of processing of a substrate by the substrate processing apparatus.

[0028] Figure 6 This is a timing chart showing an example of changes in the flow rate of the stripping gas during the polymer film stripping step.

[0029] Fig. 7A This is a diagram showing a horizontal view of the substrate during the polymer film peeling step.

[0030] Figure 7B It is a figure which shows the vertical cross section of the substrate when performing a polymer film peeling process.

[0031] Figure 7CIt is a figure which shows the vertical cross section of the substrate when performing a polymer film peeling process.

[0032] Fig.7D This is a diagram showing the substrate during the polymer film peeling step as viewed from above.

[0033] Fig. 7E This is a diagram showing the substrate during the polymer film peeling step as viewed from above.

[0034] Figure 7F This is a diagram showing a horizontal view of the substrate during the polymer film peeling step.

[0035] Figure 7G This is a diagram showing a horizontal view of the substrate during the polymer film peeling step.

[0036] Figure 7H This is a diagram showing a horizontal view of a substrate during a cleaning liquid supply process.

[0037] Figure 8 It is a schematic plan view of a substrate showing a non-device formation region and a device formation region. DETAILED DESCRIPTION

[0038] Figure 1A It is a schematic plan view showing the layout of a substrate processing apparatus 1 according to one embodiment of the present invention. Figure 1B It is a schematic side view of the substrate processing apparatus 1 .

[0039] The substrate processing device 1 is a single-wafer device that processes disc-shaped substrates W such as semiconductor wafers one by one. The substrate processing device 1 includes: a loading port LP that holds a carrier CA that accommodates the substrate W; a plurality of processing units 2 that process the substrates W transferred from the carrier CA on the loading port LP using a processing fluid such as a processing liquid or a processing gas; a transfer system TS that transfers the substrates W between the carrier CA on the loading port LP and the plurality of processing units 2; and a control device 3 that controls the substrate processing device 1.

[0040] A plurality of treatment units 2 forms a plurality of towers TW. Figure 1A This shows an example of forming four towers TW. Figure 1B As shown, a plurality of processing units 2 included in one tower TW are stacked up and down. Figure 1A As shown, the plurality of towers TW form two rows in a plan view extending in the depth direction of the substrate processing apparatus 1. The two rows face each other via the transport path TP in a plan view.

[0041] The transport system TS includes a transfer robot IR that transfers substrates W between a carrier CA on a load port LP and a plurality of processing units 2, and a central robot CR that transfers substrates W between the transfer robot IR and a plurality of processing units 2. The transfer robot IR is disposed between the load port LP and the central robot CR in a plan view. The central robot CR is disposed on the transport path TP.

[0042] The carrier robot IR includes one or more hands Hi for horizontally supporting the substrate W. The hands Hi can move in parallel in either the horizontal direction or the vertical direction. The hands Hi can rotate around a vertical line. The hands Hi can carry in and out the substrate W from the carrier CA on any load port LP, and can transfer the substrate W between the center robot CR and the substrate W.

[0043] The central robot CR includes one or more hands Hc for horizontally supporting the substrate W. The hand Hc can move in parallel in either the horizontal direction or the vertical direction. The hand Hc can rotate around a vertical line. The hand Hc can transfer the substrate W between the carrier robot IR and the substrate W, and can carry the substrate W into and out of any processing unit 2.

[0044] Next, the processing unit 2 will be described.

[0045] Figure 2 1 is a schematic diagram of the interior of a processing unit 2 provided in a substrate processing apparatus 1 when viewed horizontally. The processing unit 2 includes: a box-shaped chamber 4 having an internal space; a spin chuck 10 that holds a substrate W horizontally in the chamber 4 while rotating the substrate W around a vertical rotation axis A1 passing through the center of the substrate W; and a cylindrical processing cup 21 that surrounds the spin chuck 10.

[0046] The chamber 4 includes: a box-shaped partition 5, which is provided with a loading and unloading port 5b for the substrate W to pass through; and a door 7, which opens and closes the loading and unloading port 5b. FFU6 (Fan Filter Unit) is arranged above the air supply port 5a provided on the upper part of the partition 5. FFU6 always supplies clean air (air filtered by the filter) into the chamber 4 from the air supply port 5a. The gas in the chamber 4 is discharged from the chamber 4 through the exhaust duct 8 connected to the bottom of the processing cup 21. As a result, a downflow of clean air is always formed in the chamber 4. The flow rate of the exhaust gas discharged to the exhaust duct 8 changes according to the opening of the exhaust valve 9 arranged in the exhaust duct 8.

[0047] The spin chuck 10 includes: a disc-shaped spin base 12 that is held horizontally; a plurality of chuck pins 11 that hold the substrate W horizontally above the spin base 12; a spin shaft 13 that extends downward from the center of the spin base 12; and a spin motor 14 that rotates the spin base 12 and the plurality of chuck pins 11 by rotating the spin shaft 13.

[0048] The spin chuck 10 is not limited to a clamping type chuck in which the plurality of chuck pins 11 are in contact with the end surface of the substrate W, but may be a vacuum type chuck in which the non-device forming surface, that is, the back surface (lower surface) of the substrate W is adsorbed on the upper surface 12u of the spin base 12 to horizontally hold the substrate W. When the spin chuck 10 is a clamping type chuck, the plurality of chuck pins 11 correspond to a substrate holder. When the spin chuck 10 is a vacuum type chuck, the spin base 12 corresponds to a substrate holder.

[0049] The processing cup 21 includes: a plurality of protection members 24 for receiving the processing liquid discharged around the substrate W; a plurality of cups 23 for receiving the processing liquid guided downward by the plurality of protection members 24; and a cylindrical outer wall member 22 surrounding the plurality of protection members 24 and the plurality of cups 23. Figure 2 The example shown is that four protection members 24 and three cups 23 are provided, and the outermost cup 23 and the third protection member 24 from the top are integrated.

[0050] The protective member 24 includes: a cylindrical portion 25 surrounding the spin chuck 10; and an annular top portion 26 extending obliquely upward from the upper end of the cylindrical portion 25 toward the rotation axis A1. A plurality of top portions 26 overlap each other, and a plurality of cylindrical portions 25 are arranged in a concentric circle. The annular upper end of the top portion 26 corresponds to the upper end 24u of the protective member 24 surrounding the substrate W and the spin base 12 in a top view. A plurality of cups 23 are respectively arranged below the plurality of cylindrical portions 25. The cups 23 form an annular groove for receiving the processing liquid guided to the bottom by the protective member 24.

[0051] The processing unit 2 includes a protector lifting unit 27 for individually lifting and lowering the plurality of protectors 24. The protector lifting unit 27 positions the protector 24 at any position within a range from an upper position to a lower position. Figure 2 The figure shows a state where two of the protectors 24 are arranged at the upper position and the remaining two protectors 24 are arranged at the lower position. The upper position is when the upper end 24u of the protector 24 is arranged above the holding position where the substrate W held on the spin chuck 10 is arranged. The lower position is when the upper end 24u of the protector 24 is arranged below the holding position.

[0052] The processing unit 2 includes a plurality of nozzles for spraying a processing liquid onto a substrate W held on a spin chuck 10. The plurality of nozzles include a polymer solution nozzle 31 for spraying a polymer solution onto the upper surface of the substrate W; a cleaning liquid nozzle 32 for spraying a cleaning liquid onto the upper surface of the substrate W; and a stripping gas nozzle 33 for spraying a stripping gas onto the upper surface of the substrate W. A lower surface nozzle 71 described later is also included in the plurality of nozzles.

[0053] The polymer solution nozzle 31 may be a scanning nozzle that moves the collision position of the polymer solution with respect to the substrate W within the upper surface of the substrate W, or may be a fixed nozzle that cannot move the collision position of the polymer solution with respect to the substrate W. The same applies to other nozzles. Figure 2 The polymer solution nozzle 31 , the cleaning liquid nozzle 32 , and the stripping gas nozzle 33 are shown as examples of scanning nozzles.

[0054] The polymer solution nozzle 31 is connected to a polymer solution pipe 31p that guides the polymer solution to the polymer solution nozzle 31. When a polymer solution valve 31v attached to the polymer solution pipe 31p is opened, the polymer solution is continuously ejected downward from the ejection port of the polymer solution nozzle 31.

[0055] Although not shown, the polymer solution valve 31v includes: a valve body provided with an annular valve seat for passing the polymer solution; a valve body that can move relative to the valve seat; and an actuator that moves the valve body between a closed position where the valve body contacts the valve seat and an open position where the valve body is separated from the valve seat. The same is true for other valves. The actuator may be a pneumatic actuator or an electric actuator, or an actuator other than these. The control device 3 opens and closes the polymer solution valve 31v and the like by controlling the actuator.

[0056] The polymer solution nozzle 31 is connected to a nozzle moving unit 31m that moves the polymer solution nozzle 31 in at least one of a vertical direction and a horizontal direction. The nozzle moving unit 31m moves the polymer solution nozzle 31 horizontally between a processing position where the polymer solution ejected from the polymer solution nozzle 31 is supplied to the upper surface of the substrate W and a standby position where the polymer solution nozzle 31 is located outside the processing cup 21 in a plan view.

[0057] The polymer solution is a solution containing a polymer equivalent to a solute and a solvent that dissolves the polymer. The polymer is a water-soluble polymer (hydrophilic polymer) that is soluble in water. The solvent is water. Therefore, the polymer solution is an aqueous polymer solution. The polymer solution may contain components other than a water-soluble polymer and water. The solvent may be a liquid of an amphiphilic substance having a hydrophilic group and a hydrophobic group in one molecule. The polymer may be a hydrophobic polymer that is insoluble or almost insoluble in water. In the case described above, the solvent may be a liquid of an organic solvent or a liquid of a substance other than an organic solvent.

[0058] A water-soluble polymer is a polymer having a hydrophilic group such as a carboxyl group, a hydroxyl group, or a sulfonic acid group at the end of the molecule. The water-soluble polymer may contain at least one of a water-soluble acrylic resin, a water-soluble polyester, and a water-soluble polyurethane, or may contain polymers other than these. The water-soluble acrylic resin may be at least one of an OH-based acrylic resin and a hydroxy acrylic resin. The water-soluble polymer may be a polymer that is insoluble or almost insoluble in oil, or may be a polymer that is soluble in oil. In the latter case, the solubility of the water-soluble polymer relative to water is greater than the solubility of the water-soluble polymer relative to oil.

[0059] The upper surface of the substrate W is one of the surfaces in contact with the ambient gas in the space where the substrate W is arranged. The upper surface of the substrate W before coming into contact with the polymer solution can be either hydrophobic or hydrophilic. The contact angle of water with respect to the upper surface of the substrate W before coming into contact with the polymer solution can be greater than 32 degrees or less than 32 degrees. At least a portion of the upper surface of the substrate W can be made of silicon carbonitride (SiCN) or amorphous carbon. The contact angle of water with respect to silicon carbonitride is 62 degrees. The contact angle of water with respect to amorphous carbon is 50 to 60 degrees. However, the material of the upper surface of the substrate W is not limited to silicon carbonitride and amorphous carbon.

[0060] The cleaning liquid nozzle 32 is connected to a cleaning liquid pipe 32p that guides the cleaning liquid to the cleaning liquid nozzle 32. When a cleaning liquid valve 32v attached to the cleaning liquid pipe 32p is opened, the cleaning liquid is continuously ejected downward from the ejection port of the cleaning liquid nozzle 32. Figure 2 The example of DIW being ejected from the cleaning liquid nozzle 32 is shown. DIW (Deionized Water) means pure water (deionized water). The cleaning liquid ejected from the cleaning liquid nozzle 32 may be any of carbonated water, electrolytic ionized water, hydrogen water, ozone water, and hydrochloric acid water of a diluted concentration (e.g., about 10 to 100 ppm), or may be liquids other than these.

[0061] The cleaning liquid nozzle 32 is connected to a nozzle moving unit 32m that moves the cleaning liquid nozzle 32 in at least one of a vertical direction and a horizontal direction. The nozzle moving unit 32m moves the cleaning liquid nozzle 32 horizontally between a processing position where the cleaning liquid ejected from the cleaning liquid nozzle 32 is supplied to the upper surface of the substrate W and a standby position where the cleaning liquid nozzle 32 is located outside the processing cup 21 in a plan view.

[0062] The stripping gas nozzle 33 is connected to a stripping gas pipe 33p for guiding the stripping gas to the stripping gas nozzle 33. When the on-off valve 33v installed in the stripping gas pipe 33p is opened, the stripping gas is continuously ejected downward from the ejection port of the stripping gas nozzle 33 at a flow rate corresponding to the opening degree of the flow rate regulating valve 33f for changing the flow rate of the stripping gas. Figure 2The stripping gas nozzle 33 shows an example of nitrogen gas as an example of the stripping gas ejected. The stripping gas may be an inert gas other than nitrogen gas, or may be a gas other than the inert gas.

[0063] The stripping gas nozzle 33 is connected to a nozzle moving unit 33m that moves the stripping gas nozzle 33 in at least one of a vertical direction and a horizontal direction. The nozzle moving unit 33m moves the stripping gas nozzle 33 horizontally between a processing position where the stripping gas ejected from the stripping gas nozzle 33 is supplied to the upper surface of the substrate W and a standby position where the stripping gas nozzle 33 is located outside the processing cup 21 in a plan view.

[0064] The nozzle moving unit 33m moves the polymer solution nozzle 31 horizontally along a path that is an arc in a plan view by rotating the polymer solution nozzle 31 around a vertical line located outside the processing cup 21. Since the radius of the arc-shaped path is large, the polymer solution nozzle 31 moves horizontally along a path that can be regarded as a straight line in a plan view. The nozzle moving unit 33m can move the polymer solution nozzle 31 horizontally and parallelly without rotating it.

[0065] The nozzle moving unit 33m includes: a nozzle actuator 33a that generates power to move the polymer solution nozzle 31; and a support arm 33s that transmits the power of the nozzle actuator 33a to the polymer solution nozzle 31. The support arm 33s is an example of a transmission element that transmits the power of the nozzle actuator 33a to the polymer solution nozzle 31. The polymer solution nozzle 31 is mounted on the support arm 33s.

[0066] The nozzle actuator 33a is a device that converts driving energy representing electrical, fluid, magnetic, thermal or chemical energy into mechanical work. The nozzle actuator 33a includes an electric motor (rotational motor), a linear motor, a cylinder and other devices. The nozzle actuator 33a is an electric motor. When the polymer solution nozzle 31 is moved horizontally and parallel, the rotation of the nozzle actuator 33a can be converted into the linear motion of the polymer solution nozzle 31 through a motion converter such as a ball screw and a ball nut.

[0067] The plurality of nozzles include a lower surface nozzle 71 for ejecting a processing fluid toward the center of the lower surface of the substrate W. The lower surface nozzle 71 includes a circular plate portion disposed between the upper surface 12u of the spin base 12 and the lower surface of the substrate W; and a cylindrical portion extending downward from the circular plate portion. The ejection port of the lower surface nozzle 71 opens at the center of the upper surface of the circular plate portion. When the substrate W is held on the spin chuck 10, the ejection port of the lower surface nozzle 71 and the center of the lower surface of the substrate W are facing each other vertically.

[0068] The lower surface nozzle 71 is connected to a heating fluid pipe 71p that guides hot water, which is an example of a heating fluid, to the lower surface nozzle 71. The hot water is pure water at a higher temperature than room temperature (e.g., 20 to 30°C). The pure water is supplied to the lower surface nozzle 71 after being heated by a heater 71h, which is an example of a heat source. When a heating fluid valve 71v installed in the heating fluid pipe 71p is opened, hot water is continuously ejected upward from the ejection port of the lower surface nozzle 71. Thus, hot water is supplied to the lower surface of the substrate W.

[0069] Next, an example of the peeling gas nozzle 33 will be described.

[0070] Figure 3A It is a schematic diagram showing a vertical cross section of the peeling gas nozzle 33 with the inner tube 35 arranged at the second position. Figure 3B It means along Figure 3A FIG. 2 is a schematic diagram of a horizontal cross section of the stripping gas nozzle 33 taken along line BB. Figure 3C It means along Figure 3A FIG. 1 is a schematic diagram of a horizontal cross section of the stripping gas nozzle 33 taken along line CC. Figure 3D It is a schematic diagram showing a vertical cross section of the peeling gas nozzle 33 with the inner tube 35 arranged at the first position.

[0071] The stripping gas nozzle 33 is a variable opening nozzle whose opening area decreases when the flow rate of the stripping gas supplied to the stripping gas nozzle 33 increases, and whose opening area increases when the flow rate of the stripping gas supplied to the stripping gas nozzle 33 decreases. The stripping gas nozzle 33 includes: an outer tube 34 including a jet port 340 for spraying the stripping gas downward; an inner tube 35 including a front end opening 350 for spraying the stripping gas downward in the outer tube 34; and a plurality of elastic bodies 36 for supporting the inner tube 35 in the outer tube 34.

[0072] The outer tube 34 surrounds the inner tube 35. The outer tube 34 is concentric with the inner tube 35. The outer tube 34 supports the inner tube 35 via a plurality of fixing arms 38, a fixing ring 37, and a plurality of elastic bodies 36. The fixing arms 38, the fixing ring 37, and the elastic bodies 36 are disposed in the outer tube 34.

[0073] like Figure 3B As shown, the fixing ring 37 is concentric with the outer tube 34 and the inner tube 35. A plurality of fixing arms 38 extend from the outer peripheral surface of the fixing ring 37 to the inner peripheral surface of the outer tube 34. The plurality of fixing arms 38 are arranged at intervals in the circumferential direction of the outer tube 34. The fixing ring 37 is fixed to the outer tube 34 via the plurality of fixing arms 38.

[0074] like Figure 3A and Figure 3DAs shown in FIG. 1 , the plurality of elastic bodies 36 and the inner tube 35 are arranged below the fixing ring 37. The plurality of elastic bodies 36 extend downward from the fixing ring 37 to the upper end of the inner tube 35. The inner tube 35 is suspended from the fixing ring 37 by the plurality of elastic bodies 36. Figure 3B As shown, the plurality of elastic bodies 36 are arranged at intervals in the circumferential direction of the outer tube 34 .

[0075] The ejection port 340 of the outer tube 34 opens on the lower surface of the outer tube 34. The front end opening 350 of the inner tube 35 opens on the lower surface of the inner tube 35. The ejection port 340 and the front end opening 35o are two concentric circles. The diameter of the ejection port 340 is larger than the diameter of the front end opening 35o. The stripping gas guided by the stripping gas pipe 33p enters the outer tube 34 from the inlet 34i opened on the outer surface of the outer tube 34. The stripping gas in the outer tube 34 is ejected downward from the ejection port 34o of the outer tube 34. In addition, the stripping gas in the outer tube 34 enters the inner tube 35 from the upper end of the inner tube 35, and is ejected downward from the front end opening 35o of the inner tube 35.

[0076] The upper surface of the inner tube 35 is pressed downward by the stripping gas in the outer tube 34. Figure 3A and Figure 3D In the example shown, since the inner circumference of the inner tube 35 is in an inverted cone shape, the inner circumference of the inner tube 35 is also pressed downward by the stripping gas in the outer tube 34. The force pressing the inner tube 35 downward is transmitted to the plurality of elastic bodies 36. Therefore, the plurality of elastic bodies 36 expand and contract up and down according to the gas pressure in the outer tube 34. The elastic body 36 is made of rubber or resin. If the elastic body 36 has rubber elasticity, the elastic body 36 may be made of a material other than rubber and resin.

[0077] like Figure 3D As shown, the inner tube 35 is formed in a shape and size such that it protrudes downward from the discharge port 340 of the outer tube 34 but cannot be removed from the outer tube 34 . Figure 3D The example in which the maximum value of the outer diameter of the inner tube 35 is larger than the diameter of the ejection port 34o of the outer tube 34 is shown. In the example, the inverted conical outer peripheral surface of the inner tube 35 is in contact with the inverted conical conical portion 34c provided on the inner peripheral surface of the outer tube 34, and the inner tube 35 is prevented from moving downward relative to the outer tube 34 by the contact. The ejection port 34o of the outer tube 34 is formed by the inverted conical conical portion 34c. The front end opening 35o of the inner tube 35 is formed by the inverted conical inner peripheral surface of the inner tube 35.

[0078] Figure 3A This shows a state in which a gas such as a peeling gas is not supplied into the outer tube 34 through the inlet 34 i of the outer tube 34 . Figure 3D The figure shows a state in which the stripping gas is supplied into the outer tube 34 through the inlet 34 i of the outer tube 34 .

[0079] like Figure 3D As shown in FIG. 1 , when the flow rate of the stripping gas supplied to the outer tube 34 increases to the first flow rate, the elastic body 36 elastically deforms into a first shape in which the front end opening 35o of the inner tube 35 is arranged outside the outer tube 34 when the inner tube 35 is inserted into the ejection port 34o of the outer tube 34. Figure 3D The first position shown. Figure 3A As shown in FIG. 1 , when the flow rate of the stripping gas supplied to the outer tube 34 is reduced from the first flow rate to the second flow rate, the inner tube 35 is returned to the second shape in which the entire inner tube 35 is arranged in the outer tube 34. Figure 3A 2nd position shown.

[0080] The inner tube 35 is arranged at Figure 3D In the first position shown in FIG. 1 , the stripping gas in the outer tube 34 is discharged from the front end opening 350 of the inner tube 35 to the outside of the stripping gas nozzle 33. Figure 3A In the second position shown, the stripping gas in the outer tube 34 is discharged from the ejection port 340 of the outer tube 34 to the outside of the stripping gas nozzle 33. Therefore, when the elastic body 36 is in the first shape, the front end opening 350 of the inner tube 35 is the outlet of the stripping gas, and the area of ​​the front end opening 350 is equivalent to the opening area of ​​the stripping gas nozzle 33. When the elastic body 36 is in the second shape, the ejection port 340 of the outer tube 34 is the outlet of the stripping gas, and the area of ​​the ejection port 340 is equivalent to the opening area of ​​the stripping gas nozzle 33.

[0081] Next, the electrical configuration of the substrate processing apparatus 1 will be described.

[0082] Figure 4 This is a block diagram showing the electrical structure of the substrate processing device 1. The control device 3 includes at least one computer that can communicate with each other. The computer includes a computer body 3a and a peripheral device 3d connected to the computer body 3a. The computer body 3a includes a CPU 3b (central processing unit) that executes various commands and a memory 3c that stores information. The peripheral device 3d includes: a storage device 3e that stores information such as a program P to be sent and received between the memory 3c; a reader 3f that reads information from a removable medium RM; and a communication device 3g that communicates with other devices such as a host computer. The memory 3c and the storage device 3e are examples of storage devices that store information.

[0083] The control device 3 is connected to an input device and a display device. The input device is operated when an operator such as a user or a maintenance person inputs information to the substrate processing device 1. The information is displayed on the screen of the display device. The input device can be any one of a keyboard, a position indicating device, and a touch panel, or can be a device other than these. A touch panel display that also serves as an input device and a display device can also be set in the substrate processing device 1.

[0084] CPU 3b executes program P stored in storage device 3e. Program P in storage device 3e may be pre-installed in control device 3, or may be sent to storage device 3e from removable medium RM via reader 3f, or may be sent to storage device 3e from an external device such as a host computer via communication device 3g.

[0085] The memory 3c is a volatile memory that retains the stored data only when power is supplied. The storage device 3e and the removable medium RM are non-volatile memories that retain the stored data even when power is not supplied. The storage device 3e is a magnetic storage device such as a hard disk drive. The removable medium RM is a semiconductor memory such as an optical disk such as a compact disk or a memory card. The removable medium RM is an example of a computer-readable recording medium that records the program P. The removable medium RM is a non-transitory tangible recording medium.

[0086] The storage device 3e stores a plurality of process recipes. The process recipe is information that specifies the processing content, processing conditions, and processing sequence of the substrate W. The plurality of process recipes differ from each other in at least one of the processing content, processing conditions, and processing sequence of the substrate W. The control device 3 controls the substrate processing device 1 in such a manner that the substrate W is processed according to the process recipe specified by the host computer. The control device 3 is programmed to execute the following steps.

[0087] Next, an example of processing of the substrate W will be described.

[0088] Figure 5 1 is a process diagram for explaining an example of processing of a substrate W by the substrate processing apparatus 1. Figure 2 and Figure 5 .

[0089] The substrate W to be processed is, for example, a semiconductor wafer such as a silicon wafer. The substrate W may be a substrate having a pattern PA formed on its surface (see Figure 7B ) may also be a substrate W on which a pattern PA is not formed on the surface of the substrate W.

[0090] When the substrate W is processed by the substrate processing apparatus 1, a loading step ( Figure 5 Step S1).

[0091] Specifically, when all the protection members 24 are in the lower position and all the scanning nozzles are in the standby position, the central robot CR (refer to Figure 1A ) While supporting the substrate W horizontally with the hand Hc, the hand Hc is moved into the chamber 4. Then, the central robot CR places the substrate W on the hand Hc on the plurality of chuck pins 11 with the surface of the substrate W facing upward. Then, the central robot CR withdraws the hand Hc from the interior of the chamber 4.

[0092] After the substrate W is placed on the plurality of chuck pins 11, the plurality of chuck pins 11 are pressed against the end surface of the substrate W to hold the substrate W. Then, the rotation motor 14 is driven to start the rotation of the substrate W ( Figure 5 Step S2). Thus, the substrate W rotates at the polymer solution supply speed. The protective member lifting unit 27 raises at least one protective member 24 from the lower position to the upper position before or after the substrate W starts to rotate.

[0093] Next, a polymer solution supplying step ( Figure 5 Step S3).

[0094] Specifically, in a state where at least one protective member 24 is in the upper position, the nozzle moving unit 31m moves the polymer solution nozzle 31 from the standby position to the processing position. Then, the polymer solution valve 31v is opened, and the polymer solution nozzle 31 starts to eject the polymer solution. When a predetermined time has passed since the polymer solution valve 31v was opened, the polymer solution valve 31v is closed, and the ejection of the polymer solution is stopped. Then, the nozzle moving unit 31m moves the polymer solution nozzle 31 to the standby position.

[0095] After the polymer solution ejected from the polymer solution nozzle 31 collides with the upper surface of the substrate W rotating at the polymer solution supply speed, it flows outward along the upper surface of the substrate W due to the centrifugal force and scatters from the outer periphery of the substrate W to the periphery of the substrate W. As a result, the polymer solution is supplied to the entire upper surface of the substrate W, forming a liquid film of the polymer solution covering the entire upper surface of the substrate W. When the polymer solution nozzle 31 ejects the polymer solution, the nozzle moving unit 31m can move the collision position so that the collision position of the polymer solution relative to the upper surface of the substrate W passes through the central part and the outer periphery, or the collision position can be stationary at the central part. Whether to move the collision position also applies to the processing liquid supplied to the upper surface of the substrate W after the polymer solution.

[0096] Next, a process is performed to change the liquid film of the polymer solution on the substrate W into a solid or semi-solid polymer film 80 (see Fig. 7A ) of the polymer film forming step ( Figure 5 Step S4).

[0097] Specifically, when at least one protective member 24 is in the upper position and the polymer solution nozzle 31 stops ejecting the polymer solution, the rotary motor 14 maintains the rotation speed of the substrate W at the film forming speed. The film forming speed may be equal to or different from the polymer solution supply speed. Even after the ejection of the polymer solution stops, the polymer solution on the substrate W is discharged from the substrate W to the outside due to the centrifugal force. Therefore, the thickness of the liquid film of the polymer solution on the substrate W decreases. When the polymer solution on the substrate W is discharged to a certain extent, the amount of the polymer solution discharged from the substrate W per unit time is reduced to zero or substantially zero. Thus, when the entire upper surface of the substrate W is covered with the liquid film of the polymer solution, the thickness of the liquid film of the polymer solution on the substrate W is stabilized at a value corresponding to the rotation speed of the substrate W.

[0098] When the rotary engine 14 rotates the substrate W at the film forming speed, the heating fluid valve 71v is opened, and the lower surface nozzle 71 starts to spray hot water. The hot water sprayed from the lower surface nozzle 71 collides with the lower surface of the substrate W rotating at the film forming speed, and then flows outward along the lower surface of the substrate W. Thus, hot water is supplied to the entire lower surface of the substrate W. When a predetermined time has passed after the heating fluid valve 71v is opened, the heating fluid valve 71v is closed, and the spraying of hot water is stopped. The spraying of hot water may be started before the spraying of the polymer solution stops, or before the spraying of the polymer solution starts.

[0099] The concentration of the solvent of the polymer solution on the substrate W (the concentration of water when the polymer solution is a polymer aqueous solution) gradually decreases as the solvent evaporates. Since the rotary motor 14 rotates the substrate W, an airflow that promotes the evaporation of the solvent is formed above the substrate W. Figure 2 ) The downflow of clean air flowing also promotes the evaporation of the solvent. In addition, since the heat supplied from the hot water to the substrate W is transferred to the polymer solution, the evaporation of the solvent is further promoted. The solvent evaporates from the polymer solution, while the solute, that is, the polymer, does not evaporate or hardly evaporates. Therefore, when the solvent evaporates from the polymer solution, the concentration of the polymer in the polymer solution gradually increases.

[0100] When the concentration of the polymer reaches or exceeds the saturation concentration, the liquid film of the polymer solution covering the entire upper surface of the substrate W changes to a solid or semi-solid polymer film 80 covering the entire upper surface of the substrate W, and the upper surface of the substrate W becomes dry or almost dry. When observed in a direction perpendicular to the upper surface of the substrate W, the polymer film 80 is a circle having the same diameter as the substrate W and concentric with the substrate W (see FIG. Fig.7D). When viewed in a direction perpendicular to the upper surface of the substrate W, the outer edge of the polymer film 80 overlaps with the outer edge of the substrate W at any position. As described later, the polymer film 80 is peeled off from the substrate W by the pressure of the peeling gas. If the polymer film 80 peeled off from the substrate W is not separated, the polymer film 80 may be in a state with a large amount of solvent such as a gel.

[0101] When the liquid film of the polymer solution changes to the polymer film 80, the particles in contact with the liquid film of the polymer solution are captured by the polymer film 80, and the movement relative to the polymer film 80 is restricted. Hot water is continuously supplied to the lower surface of the substrate W even after the polymer film 80 is formed. As a result, the solvent further evaporates from the polymer film 80, and the polymer film 80 shrinks. The force of the shrinkage of the polymer film 80 attempts to peel the particles captured by the polymer film 80 from the substrate W. As a result, useless materials such as particles are peeled off from the substrate W or are easily peeled off from the substrate W.

[0102] Next, a polymer film peeling step ( ) is performed in which a peeling gas is ejected toward the upper surface of the substrate W to peel off the polymer film 80 from the substrate W. Figure 5 Step S5).

[0103] Specifically, when at least one protective member 24 is in the upper position and the rotary engine 14 rotates the substrate W at the stripping speed, the nozzle moving unit 33m moves the stripping gas nozzle 33 from the standby position to the processing position. Then, the on-off valve 33v is opened, and the stripping gas nozzle 33 starts to spray the stripping gas. When a predetermined time has passed since the on-off valve 33v was opened, the on-off valve 33v is closed and the spraying of the stripping gas is stopped. Then, the nozzle moving unit 33m moves the stripping gas nozzle 33 to the standby position. The stripping speed may be equal to or different from the polymer solution supply speed. As described later, when the stripping gas nozzle 33 sprays the stripping gas toward the upper surface of the substrate W covered with the polymer film 80, the polymer film 80 that is in close contact with the entire upper surface of the substrate W is stripped from the substrate W and removed from the substrate W.

[0104] Next, a cleaning liquid supply step (a step of supplying a cleaning liquid such as pure water to the upper surface of the substrate W) is performed. Figure 5 Step S6).

[0105] Specifically, in a state where at least one of the protective members 24 is located at the upper position, the nozzle moving unit 32m moves the cleaning liquid nozzle 32 from the standby position to the processing position. Then, in a state where the substrate W is rotated at the cleaning liquid supply speed by the rotation motor 14, the cleaning liquid valve 32v is opened, and the cleaning liquid nozzle 32 starts to spray pure water. Before starting to spray pure water, the protective member lifting unit 27 can vertically move at least one of the protective members 24 in order to switch the protective member 24 that receives the liquid discharged from the substrate W.

[0106] After the pure water ejected from the cleaning liquid nozzle 32 collides with the upper surface of the substrate W rotating at the cleaning liquid supply speed, it flows outward along the upper surface of the substrate W due to the centrifugal force and scatters from the outer periphery of the substrate W to the surroundings of the substrate W. As a result, a liquid film of pure water covering the entire upper surface of the substrate W is formed. In the case where useless matter such as fragments of the polymer film 80 remains on the substrate W, the useless matter is washed away by the pure water. When a predetermined time has passed after the cleaning liquid valve 32v is opened, the cleaning liquid valve 32v is closed to stop ejecting the pure water. Then, the nozzle moving unit 32m moves the cleaning liquid nozzle 32 to the standby position.

[0107] Next, a drying step ( ) is performed in which the substrate W is dried by rotating the substrate W at a high speed. Figure 5 Step S7).

[0108] Specifically, the rotation motor 14 rotates the substrate W in the rotation direction Dr (refer to Fig. 7A ) is accelerated, and the substrate W is rotated at a high rotation speed (for example, several thousand rpm) that is higher than the rotation speed of the substrate W from the polymer solution supply process to the cleaning liquid supply process. When the rotation motor 14 starts the high-speed rotation of the substrate W, the liquid is scattered from the substrate W to the outside and removed from the substrate W. Thus, the substrate W is dried. When a predetermined time has passed after the start of the high-speed rotation of the substrate W, the rotation motor 14 stops rotating. Thus, the rotation of the substrate W stops ( Figure 5 Step S8).

[0109] Next, a step of carrying out the substrate W from the chamber 4 is performed ( Figure 5 Step S9).

[0110] Specifically, the protective member lifting unit 27 lowers all the protective members 24 to the lower position. Then, the central robot CR causes the hand Hc to enter the chamber 4. After the plurality of chuck pins 11 release the substrate W from being held, the central robot CR uses the hand Hc to support the substrate W on the spin chuck 10. Then, the central robot CR retreats the hand Hc from the inside of the chamber 4 while supporting the substrate W horizontally with the hand Hc. Thus, the processed substrate W is carried out of the chamber 4.

[0111] Next, the polymer film peeling step will be described in more detail.

[0112] Figure 6 This is a timing chart showing an example of changes in the flow rate of the stripping gas during the polymer film stripping step. Figure 7A to Figure 7G 1 is a schematic diagram showing a substrate W during a polymer film peeling step. Figure 7H FIG. 1 is a schematic diagram showing a substrate W during a cleaning liquid supply step. Figure 8 1 is a schematic plan view of the substrate W showing the non-device formation region R1 and the device formation region R2. Figure 7BThe multiple circles in the four sides of the frame represent particles. Figure 2 .

[0113] In the polymer film stripping step, when at least one protective member 24 is located at the upper position and the rotary engine 14 rotates the substrate W at the stripping speed, the nozzle actuator 33a moves the stripping gas nozzle 33 from the standby position to the first ejection position P1 (see FIG. Fig. 7A ).like Figure 6 As shown, at time T1, when the stripping gas nozzle 33 is located at the first ejection position P1, the on-off valve 33v is opened, and the stripping gas nozzle 33 starts to eject the stripping gas. When the on-off valve 33v is opened, the opening degree of the flow rate regulating valve 33f is the first opening degree, and the flow rate of the stripping gas ejected from the stripping gas nozzle 33 is the first speed.

[0114] like Figure 6 As shown, when reaching the time T2, the opening of the flow regulating valve 33f is reduced from the first opening to the second opening. As a result, the flow rate of the stripping gas ejected from the stripping gas nozzle 33 is reduced from the first speed to the second speed. Then, the nozzle actuator 33a moves the stripping gas nozzle 33 from the first ejection position P1 to the second ejection position P2. Then, at the time T3, the on-off valve 33v is closed, and the stripping gas nozzle 33 stops ejecting the stripping gas. Then, the nozzle actuator 33a moves the stripping gas nozzle 33 from the second ejection position P2 to the standby position. The opening of the flow regulating valve 33f returns to the first opening after the on-off valve 33v is closed.

[0115] like Fig. 7A As shown, after the stripping gas ejected from the stripping gas nozzle 33 collides with the polymer film 80 at the collision position, it flows radially from the collision position along the surface of the polymer film 80. The collision position is a circular area where the stripping gas ejected from the stripping gas nozzle 33 first collides with the upper surface of the substrate W or the upper surface of the polymer film 80. The diameter of the collision position is smaller than the radius of the substrate W. The diameter of the collision position may be less than the outer diameter of the stripping gas nozzle 33, or may exceed the outer diameter of the stripping gas nozzle 33. The diameter of the collision position may be such that the collision position as a whole can be arranged in the non-device forming area R1 (refer to Figure 8 ) or any other value. The collision position may be a linear or other area than a circle.

[0116] The force applied from the stripping gas to the polymer film 80 is greatest at the collision position. The polymer film 80 is pressed against the substrate W by the pressure of the stripping gas. Figure 7B As shown, the thickness of the polymer film 80 is locally reduced at the collision location. Figure 7CAs shown, the stripping gas destroys the polymer film 80 at the collision position, and forms a through hole 81 that penetrates the polymer film 80 in the thickness direction of the polymer film 80. The through hole 81 is a hole surrounded by the edge 80e of the polymer film 80. The edge 80e of the polymer film 80 corresponds to the outer periphery of the through hole 81. The through hole 81 may be surrounded by the polymer film 80 throughout the entire periphery of the through hole 81, or may be open at the outer edge of the polymer film 80.

[0117] like Fig. 7A As shown in FIG. 1 , the stripping gas nozzle 33 starts to eject the stripping gas while being stationary at the first ejection position P1 where the stripping gas is blown onto the upper surface of the substrate W between the center of the substrate W and the outer periphery of the substrate W. Since the stripping gas nozzle 33 is stationary, although the absolute position of the stripping gas nozzle 33 does not change, the collision position with the upper surface of the substrate W rotates relative to the substrate W around the rotation center of the substrate W because the substrate W rotates. Therefore, the thickness of the polymer film 80 is locally reduced on a circle concentric with the substrate W. When the thickness of the polymer film 80 in the circle is reduced to a certain extent, a through hole 81 is formed. The through hole 81 may also be a linear cut extending along the circumference of the substrate W.

[0118] like Figure 7C As shown in the figure, when the through hole 81 is formed in the polymer film 80, a part of the upper surface of the substrate W is exposed from the polymer film 80 in the through hole 81. In addition, the polymer film 80 is peeled off from the substrate W around the through hole 81, and a gap is formed between the polymer film 80 and the substrate W. In other words, the polymer film 80 changes from a state of being in close contact with the upper surface of the substrate W over the entire area to a state of being partially peeled off from the upper surface of the substrate W. As a result, the polymer film 80 is morphologically divided into a peeling portion 82 peeled off from the upper surface of the substrate W and a close contact portion 83 close to the upper surface of the substrate W. In other words, the polymer film 80 changes from a state in which the entire polymer film 80 is the close contact portion 83 to a state including the peeling portion 82 and the close contact portion 83.

[0119] The polymer film 80 is broken under the pressure of the stripping gas, so that the stripping portion 82 stripped from the upper surface of the substrate W and the close contact portion 83 which is in close contact with the upper surface of the substrate W as a whole with the stripping portion 82 can be formed as the polymer film 80. The stripping portion 82 is a part of the polymer film 80, and the close contact portion 83 is the remaining part of the polymer film 80. The lower surface of the close contact portion 83 is in close contact with the upper surface of the substrate W. The upper surface of the close contact portion 83 is in contact with the ambient gas in the space where the substrate W is arranged. The upper surface of the close contact portion 83 is connected to the upper surface of the stripping portion 82, and the lower surface of the close contact portion 83 is connected to the lower surface of the stripping portion 82. The stripping portion 82 is a part or all of the polymer film 80 whose connection with the substrate W is cut off. After being stripped from the substrate W, the stripping portion 82 can be in contact with the upper surface of the substrate W, or can be separated from the upper surface of the substrate W.

[0120] Immediately after the through hole 81 is formed, the polymer film 80 is in close contact with most of the upper surface of the substrate W, and the polymer film 80 is peeled off only from a very narrow range around the through hole 81. The peeling gas enters between the polymer film 80 and the substrate W through the through hole 81, and exerts a peeling force on the polymer film 80 to peel the polymer film 80 from the substrate W. The polymer film 80 is further peeled off from the substrate W by the peeling force. Specifically, the peeling gas entering between the polymer film 80 and the substrate W separates the boundary 84 (refer to Figure 7C ) is pressed to the close contact portion 83 side to form a new peeling portion 82. Strictly speaking, the close contact portion 83 is changed into a new peeling portion 82.

[0121] The stripping gas that enters between the polymer film 80 and the substrate W from the through hole 81 spreads in a semicircular shape from the outer periphery of the through hole 81. Therefore, a new semicircular stripping portion 82 is formed outside the through hole 81, the center of which is arranged near the outer periphery of the through hole 81. Just after the through hole 81 is formed, a plurality of such semicircular stripping portions 82 are formed around the entire circumference or substantially the entire circumference of the through hole 81, and the plurality of semicircular stripping portions 82 are connected to each other. Therefore, just after the through hole 81 is formed, an annular stripping portion 82 that expands outward from the entire circumference or substantially the entire circumference of the through hole 81 is formed.

[0122] After the annular peeling portion 82 surrounding the through hole 81 is formed, the peeling gas that has entered between the polymer film 80 and the substrate W diffuses in a semicircular shape from the outer periphery of the annular peeling portion 82. Therefore, at least one new semicircular peeling portion 82 is formed outside the annular peeling portion 82. By repeatedly generating the same phenomenon, the close contact portion 83 changes into the peeling portion 82, and the peeling portion 82 becomes larger. When the area of ​​the peeling portion 82 exceeds the area of ​​the close contact portion 83 and the close contact portion 83 changes into the peeling portion 82 as a whole, the polymer film 80 is peeled off from the upper surface of the substrate W as a whole.

[0123] Fig.7D 81 is shown immediately after the through hole 81 is formed. The stripping gas collides with the polymer film 80 between the center of the substrate W and the periphery of the substrate W. In the case where the through hole 81 is not opened at the periphery of the substrate W but is surrounded by the polymer film 80, the stripping portion 82 extends from the through hole 81 to the periphery of the substrate W on the side opposite to the center of the substrate W relative to the through hole 81. Thus, the polymer film 80 is stripped from a part of the periphery of the substrate W. In the case where the stripping portion 82 does not reach the periphery of the substrate W, the stripping portion 82 may be extended to the periphery of the substrate W by moving the stripping gas nozzle 33 away from the center of the substrate W.

[0124] Fig. 7EThe through hole 81 becomes larger than the initial one. The force that rotates the substrate W causes the stripping gas that enters between the polymer film 80 and the substrate W to press the polymer film 80 in the rotation direction Dr of the substrate W. In other words, the force that rotates the substrate W wants to expand the stripping portion 82 in the direction opposite to the rotation direction Dr of the substrate W. Fig. 7E As shown, the peeling portion 82 expands in the direction opposite to the rotation direction Dr of the substrate W at a speed greater than the speed at which the peeling portion 82 expands in the rotation direction Dr of the substrate W. Therefore, not only the pressure of the peeling gas but also the force of rotating the substrate W peels the polymer film 80 from the substrate W. Thus, peeling of the polymer film 80 is promoted.

[0125] The stripping gas nozzle 33 starts to eject the stripping gas at the first ejection position P1 where the stripping gas is blown onto the upper surface of the substrate W between the center of the substrate W and the outer periphery of the substrate W. Then, the nozzle actuator 33a moves the stripping gas nozzle 33 at the first ejection position P1 horizontally to the second ejection position P2 (refer to FIG. Figure 7G ), causing the distance from the center of the substrate W to the collision position of the stripping gas to change. Figure 7F 4 shows the stripping gas nozzle 33 moving to the second ejection position P2. Even when the stripping gas nozzle 33 is located at any position in the path from the first ejection position P1 to the second ejection position P2, the stripping gas ejected from the stripping gas nozzle 33 is blown onto the upper surface of the substrate W via the polymer film 80 or not via the polymer film 80.

[0126] The stripping gas nozzle 33 is arranged at Figure 7F When the stripping gas nozzle 33 is at the first ejection position P1 indicated by the double-dashed line in FIG. 1 , the stripping gas ejected from the stripping gas nozzle 33 first collides with the first collision position Q1 in the upper surface of the substrate W, and flows radially from the first collision position Q1 along the upper surface of the substrate W. Similarly, when the stripping gas nozzle 33 is arranged at Figure 7G At the second ejection position P2 shown, the stripping gas ejected from the stripping gas nozzle 33 first collides with the second collision position Q2 in the upper surface of the substrate W, and flows radially along the upper surface of the substrate W from the second collision position Q2.

[0127] The first ejection position P1 is a position where the stripping gas is blown onto the periphery of the substrate W or its vicinity. The second ejection position P2 may be a central position where the stripping gas is blown onto the center of the substrate W or its vicinity, or a peripheral position where the stripping gas is blown onto the periphery of the substrate W or its vicinity, or an intermediate position between the central position and the peripheral position. The nozzle actuator 33a may cause the stripping gas nozzle 33 to reciprocate horizontally between the first ejection position P1 and the second ejection position P2 at least once.

[0128] The nozzle actuator 33a can maintain the moving speed of the stripping gas nozzle 33 at a fixed speed or can change it. In the latter case, the nozzle actuator 33a can move the stripping gas nozzle 33 in a manner that generates at least one of an acceleration period, a deceleration period, and a stationary period, or can move the stripping gas nozzle 33 in a manner that generates at least one of an acceleration period, a deceleration period, and a stationary period and a constant speed period.

[0129] The acceleration period is a period during which the moving speed of the stripping gas nozzle 33 increases in stages or continuously as the collision position of the stripping gas approaches the center of the substrate W. The deceleration period is a period during which the moving speed of the stripping gas nozzle 33 decreases in stages or continuously as the collision position of the stripping gas approaches the center of the substrate W. The stationary period is a period during which the stripping gas nozzle 33 is stationary. The constant speed period is a period during which the stripping gas nozzle 33 moves at a fixed speed.

[0130] like Figure 7F As shown, when the stripping gas nozzle 33 moves from the first ejection position P1, the collision position of the stripping gas relative to the substrate W approaches the center of the substrate W, and approaches the boundary 84 between the stripping portion 82 and the close contact portion 83. As a result, the pressure of the stripping gas applied to the boundary 84 between the stripping portion 82 and the close contact portion 83 increases, and the polymer film 80 is further stripped. In other words, a new stripping portion 82 is formed, and the stripping portion 82 expands toward the center side of the substrate W. The stripping gas that enters between the polymer film 80 and the substrate W flows from the new stripping portion 82 toward the center direction of the substrate W (toward the center of the substrate W) and in the circumferential direction. As shown in FIG. Fig. 7E As shown in FIG. 1 , as the collision position of the stripping gas approaches the center of the substrate W, such a phenomenon occurs, and the stripping portion 82 becomes larger in the center direction and the circumferential direction of the substrate W.

[0131] When the stripping gas nozzle 33 moves from the first ejection position P1, a force that expands the edge 80e of the polymer film 80 to form the through hole 81 may be applied to the polymer film 80 from the stripping gas, so that the edge 80e of the polymer film 80 is ruptured. In this case, one or more cuts are formed in the polymer film 80 that are open at the edge 80e of the polymer film 80. Fig. 7E As shown in FIG. 1 , when a plurality of cuts are formed in the polymer film 80, the peeling portion 82 located between two cuts may be rolled up from the substrate W and placed on the close contact portion 83 in a reversed state with the front and back sides thereof. The peeling gas is blown onto the peeling portion 82 that is reversed on the close contact portion 83, and a force is applied to the peeling portion 82. The force is transmitted to the close contact portion 83 via the peeling portion 82, and the polymer film 80 is further peeled off. As a result, the peeling portion 82 becomes larger.

[0132] like Figure 7GAs shown in FIG. 1 , when the stripping gas is ejected toward the upper surface of the substrate W while the collision position of the stripping gas with respect to the substrate W is moved, the entire contact portion 83 is changed into the stripping portion 82, and the polymer film 80 is entirely stripped from the substrate W. The polymer film 80 may be stripped from the substrate W in a state where the polymer film 80 is entirely connected, or may be stripped from the substrate W in a state where the polymer film 80 is separated into a plurality of fragments. The ejection of the stripping gas and the rotation of the substrate W continue after the polymer film 80 is entirely stripped from the substrate W. The polymer film 80 remaining on the substrate W after being stripped from the substrate W is subjected to a force from at least one of the stripping gas and the substrate W, and is scattered from the substrate W. Thus, the polymer film 80 holding the particles is removed from the substrate W.

[0133] like Figure 7H As shown in FIG. 2 , after the polymer film 80 is removed from the substrate W, a cleaning liquid such as pure water is sprayed onto the upper surface of the substrate W while the substrate W is rotated (cleaning liquid supply process). If useless materials such as fragments of the polymer film 80 remain on the substrate W, the useless materials are washed away by the cleaning liquid and scattered from the outer periphery of the substrate W to the periphery of the substrate W together with the cleaning liquid. The cleaning liquid scattered from the substrate W is received by the inner peripheral surface of the protective member 24 and flows downward along the inner peripheral surface of the protective member 24. Then, the cleaning liquid enters the cup 23 (refer to FIG. 24 ). Figure 2 ) and is discharged from cup 23 through the drain port of cup 23.

[0134] When the through hole 81 is formed in the polymer film 80, the polymer film 80 may be broken, and fragments of the polymer film 80 may be generated. When the peeling portion 82 extends from the through hole 81, or when a linear cut opened at the edge 80e of the polymer film 80 is formed in the polymer film 80, fragments of the polymer film 80 may also be generated. Such fragments of the polymer film 80 are subjected to force from the peeling gas or the rotating substrate W, and are scattered to the inner peripheral surface of the protective member 24. In the case where the fragments of the polymer film 80 remain on the substrate W, the fragments are washed away by the cleaning liquid and removed from the substrate W. In this way, the fragments of the polymer film 80 are removed from the substrate W.

[0135] After the polymer film 80 is separated from the substrate W and is caught by the inner peripheral surface of the protective member 24, it falls downward in the space inside the protective member 24. In the case where the polymer film 80 scattered from the substrate W does not fall into the cup 23 but stays inside the protective member 24, the polymer film 80 contacts the cleaning liquid scattered from the substrate W and dissolves in the cleaning liquid. As a result, the polymer film 80 becomes smaller or is divided into a plurality of fragments and falls into the cup 23. The polymer film 80 in the cup 23 is dissolved in the cleaning liquid entering the cup 23, or is changed into smaller fragments by contact with the cleaning liquid, and then discharged from the cup 23 through the drain port of the cup 23 together with the cleaning liquid.

[0136] like Figure 6As shown in FIG. 1 , when the stripping gas nozzle 33 starts to eject the stripping gas at the first ejection position P1, the opening of the flow regulating valve 33f is the first opening. When a predetermined time has passed since the on-off valve 33v was opened, the opening of the flow regulating valve 33f is reduced from the first opening to the second opening. As a result, the flow of the stripping gas supplied to the stripping gas nozzle 33 is reduced, and the pressure applied to the upper surface of the substrate W by the stripping gas is reduced from the first pressure to the second pressure. After the opening of the flow regulating valve 33f is reduced from the first opening to the second opening, the nozzle actuator 33a moves the stripping gas nozzle 33 from the first ejection position P1 to the second ejection position P2. Therefore, in a state where the pressure applied to the upper surface of the substrate W by the stripping gas is reduced, the collision position of the stripping gas with respect to the substrate W moves within the upper surface of the substrate W.

[0137] When the through hole 81 is formed in the polymer film 80, the opening of the flow rate adjustment valve 33f is the first opening which is larger than the second opening, and the pressure applied to the upper surface of the substrate W by the stripping gas is the first pressure which is larger than the second pressure. Therefore, compared with the case where the pressure applied to the upper surface of the substrate W by the stripping gas is the second pressure, the through hole 81 can be reliably formed in a short time. On the other hand, when the collision position of the stripping gas with respect to the upper surface of the substrate W moves, the opening of the flow rate adjustment valve 33f is the second opening. After the through hole 81 is formed in the polymer film 80, since the stripping gas enters between the polymer film 80 and the substrate W, even if the pressure applied to the upper surface of the substrate W by the stripping gas is reduced, the polymer film 80 can be stripped under the pressure of the stripping gas. Therefore, compared with the case where the pressure applied to the upper surface of the substrate W by the stripping gas is continuously maintained at the first pressure, the stripping portion 82 can be expanded while reducing the consumption of the stripping gas.

[0138] The polymer film stripping process can be used in devices such as transistors or pattern PA (reference Figure 7B ) is formed on the substrate W, or it may be performed before the device or pattern PA is formed on the substrate W. In the former case, Figure 8 As shown, the first ejection position P1 of the stripping gas nozzle 33 may be set so that the first collision position Q1 where the stripping gas first collides with the substrate W is located within the non-device forming region R1.

[0139] The device formation region R2 and the non-device formation region R1 are both regions within the surface of the substrate W corresponding to the device formation surface. Figure 8In the figure, the outer edge of the device forming region R2 is indicated by a bold line. The device forming region R2 is a region where a device such as a transistor or a pattern PA is formed. The non-device forming region R1 is a region where no device or pattern PA is formed. The non-device forming region R1 is an annular region around the device forming region R2. The first collision position Q1 may be a position within the device forming region R2. The second collision position Q2 may be a position within the device forming region R2 or a position within the non-device forming region R1. Figure 8 represents an example of the latter.

[0140] When the first collision position Q1 is located in the non-device forming region R1, the relatively high-pressure stripping gas collides with the non-device forming region R1. As described above, the nozzle actuator 33a moves the stripping gas nozzle 33 from the first ejection position P1 to the second ejection position P2 side after the opening of the flow rate adjustment valve 33f is reduced from the first opening to the second opening. Therefore, in a state where the pressure of the stripping gas colliding with the non-device forming region R1 is reduced, the collision position of the stripping gas with respect to the upper surface of the substrate W is moved from the non-device forming region R1 to the device forming region R2. As a result, the polymer film 80 can be stripped in a state where the force applied from the stripping gas to the device forming region R2 is reduced.

[0141] Next, the effects of this embodiment will be described.

[0142] In the present embodiment, a stripping gas is ejected from the stripping gas nozzle 33 at a relatively large first speed toward the upper surface of the substrate W covered with a solid or semi-solid polymer film 80. Since the speed of the stripping gas is relatively large, a relatively large pressure is applied to the polymer film 80 from the stripping gas. As a result, the polymer film 80 is broken and is divided into a stripping portion 82 and a close contact portion 83. The stripping gas enters between the stripping portion 82 and the substrate W. Then, the stripping gas is ejected from the stripping gas nozzle 33 at a relatively small second speed. The boundary 84 between the stripping portion 82 and the close contact portion 83 is pressed toward the close contact portion 83 side by the stripping gas entering between the stripping portion 82 and the substrate W. As a result, the close contact portion 83 is stripped from the substrate W and changes into the stripping portion 82.

[0143] The nozzle actuator 33a changes the distance from the collision position of the stripping gas with respect to the upper surface of the substrate W to the center of the substrate W by horizontally moving the stripping gas nozzle 33. The force applied from the stripping gas to the polymer film 80 is maximum at the collision position. Therefore, by horizontally moving the stripping gas nozzle 33, the change from the close contact portion 83 to the stripping portion 82 can be promoted.

[0144] In this way, the polymer film 80 is peeled off from the substrate W by the peeling gas and the nozzle actuator 33a. Therefore, the polymer film 80 can be peeled off from the substrate W without using a liquid such as a peeling liquid. In addition, since the peeling gas is ejected at a relatively large first speed, the polymer film 80 can be reliably broken in a short time. Since the flow rate of the peeling gas is reduced to the second speed after the polymer film 80 is broken, the amount of peeling gas used can be reduced compared to the case where the flow rate of the peeling gas is continuously maintained at the first speed. As a result, the energy consumption required for processing the substrate W can be reduced.

[0145] In the present embodiment, the stripping gas nozzle 33 located at the first ejection position P1 ejects the stripping gas at the first speed. The first ejection position P1 is a position where the stripping gas ejected from the stripping gas nozzle 33 collides with the non-device formation region R1 in the upper surface of the substrate W. Therefore, the pressure of the stripping gas can be prevented from being applied to at least one of the device and the pattern PA formed in the device formation region R2, while the polymer film 80 can be destroyed by the pressure of the stripping gas.

[0146] After the flow rate of the stripping gas is reduced to the second speed, the nozzle actuator 33a moves the stripping gas nozzle 33 toward the second ejection position P2. The position between the first ejection position P1 and the second ejection position P2 is a position where the stripping gas ejected from the stripping gas nozzle 33 collides with the device formation region R2 in the upper surface of the substrate W. Therefore, the polymer film 80 can be further peeled off from the substrate W while preventing a strong force from being applied to at least one of the device and the pattern PA formed in the device formation region R2.

[0147] In this embodiment, after the polymer film 80 is peeled off from the upper surface of the substrate W, a cleaning liquid is sprayed onto the upper surface of the substrate W. In the case where the polymer film 80 itself or a small piece of the polymer film 80 remains on the upper surface of the substrate W, the polymer film 80 on the substrate W is rinsed with the cleaning liquid. The polymer film 80 is a solid or semi-solid film containing a water-soluble polymer. The cleaning liquid is a liquid containing water. Even if the polymer film 80 is not rinsed with the cleaning liquid and remains on the substrate W, the polymer film 80 will be dissolved in the cleaning liquid and discharged from the substrate W together with the cleaning liquid. In this way, the polymer film 80 remaining on the upper surface of the substrate W can be reduced.

[0148] In the present embodiment, the polymer film 80 that is peeled off from the upper surface of the substrate W by the pressure of the peeling gas and scattered from the upper surface of the substrate W to the periphery of the substrate W is received by the protective member 24 located around the substrate W. Similarly, the cleaning liquid that is supplied to the upper surface of the substrate W and scattered from the upper surface of the substrate W to the periphery of the substrate W is received by the protective member 24 located around the substrate W. In the case where the polymer film 80 itself or a small piece of the polymer film 80 stays inside the protective member 24, the polymer film 80 comes into contact with the cleaning liquid scattered from the substrate W and is dissolved in the cleaning liquid. Thus, the polymer film 80 can be removed from the inside of the protective member 24.

[0149] In this embodiment, a solid or semi-solid film containing a water-soluble polymer is brought into close contact with the upper surface of a substrate W having a water contact angle of 32 degrees or more. The water contact angle is one of the indicators indicating the degree of hydrophilicity. Since the water contact angle is 32 degrees or more, the hydrophilicity of the upper surface of the substrate W is not high, and therefore the affinity of the polymer film 80 to the upper surface of the substrate W is not high. Therefore, it is easier to peel off the polymer film 80 from the substrate W than in the case where the affinity of the polymer film 80 to the upper surface of the substrate W is high. Thus, the fragments of the polymer film 80 that are not peeled off from the substrate W and remain on the substrate W can be reduced.

[0150] In this embodiment, a polymer solution is sprayed onto the upper surface of the substrate W. Thus, a liquid film of the polymer solution is formed on the substrate W. Heat from the heater 71h, which is an example of a heat source, is transferred to the liquid film. Thus, the evaporation of the solvent is promoted, and the liquid film of the polymer solution is changed into a solid or semi-solid polymer film 80. In addition, when the solvent evaporates from the polymer solution, the polymer film 80 shrinks, generating a force to peel off the particles captured in the polymer film 80 from the substrate W. If the polymer film 80 is peeled off and removed from the substrate W, the particles are also removed from the substrate W. Thus, the particles remaining on the substrate W can be reduced.

[0151] In the present embodiment, the polymer film 80 is peeled off from the upper surface of the substrate W without being separated as a whole by ejecting the peeling gas onto the upper surface of the substrate W. In other words, the polymer film 80 is peeled off from the upper surface of the substrate W as a whole without generating fragments of the polymer film 80. The polymer film 80 peeled off from the substrate W is broken but not scattered. When the polymer film 80 peeled off from the substrate W is removed, the fragments of the polymer film 80 do not remain on the substrate W. Therefore, the polymer film 80 peeled off from the substrate W can be easily removed from the substrate W.

[0152] In this embodiment, the stripping gas nozzle 33 is made to eject the stripping gas at a first speed, and then the stripping gas nozzle 33 is made to eject the stripping gas at a second speed. The stripping gas nozzle 33 is a variable opening nozzle whose opening area changes according to the flow rate of the stripping gas supplied to the stripping gas nozzle 33. If the opening area of ​​the stripping gas nozzle 33, that is, the area of ​​the ejection port of the stripping gas nozzle 33 is fixed, the flow rate of the stripping gas ejected from the ejection port of the stripping gas nozzle 33 is proportional to the flow rate of the stripping gas supplied to the stripping gas nozzle 33.

[0153] When the flow rate of the stripping gas supplied to the stripping gas nozzle 33 increases, the opening area of ​​the stripping gas nozzle 33 decreases. Therefore, compared with the case where the opening area of ​​the stripping gas nozzle 33 is fixed, the flow rate of the stripping gas can be increased, and the pressure of the stripping gas applied to the substrate W or the polymer film 80 can be increased. On the contrary, when the flow rate of the stripping gas supplied to the stripping gas nozzle 33 decreases, the opening area of ​​the stripping gas nozzle 33 increases. Therefore, the decrease in the pressure of the stripping gas generated at the ejection port of the stripping gas nozzle 33 can be reduced, and the energy of the stripping gas supplied to the stripping gas nozzle 33 can be effectively used.

[0154] In the present embodiment, an example of a variable opening nozzle, that is, a stripping gas nozzle 33 includes an outer tube 34, an inner tube 35, and an elastic body 36. When the flow rate of the stripping gas supplied to the outer tube 34 increases to a first flow rate, the elastic body 36 elastically deforms into a first shape. When the flow rate of the stripping gas decreases from the first flow rate to a second flow rate, the elastic body 36 returns to a second shape. The first shape is a shape in which the front end opening 35o of the inner tube 35 is arranged outside the outer tube 34 when the inner tube 35 is inserted into the ejection port 34o of the outer tube 34. The second shape is a shape in which the inner tube 35 is entirely arranged in the outer tube 34.

[0155] When the elastic body 36 is in the first shape, the stripping gas supplied to the outer tube 34 is discharged from the front end opening 35o of the inner tube 35 to the outside of the stripping gas nozzle 33. When the elastic body 36 is in the second shape, the stripping gas supplied to the outer tube 34 is discharged from the ejection port 34o of the outer tube 34 to the outside of the stripping gas nozzle 33. Therefore, when the elastic body 36 is in the first shape, the front end opening 35o of the inner tube 35 is the outlet of the stripping gas, and the area of ​​the front end opening 35o is equivalent to the opening area of ​​the stripping gas nozzle 33. When the elastic body 36 is in the second shape, the ejection port 34o of the outer tube 34 is the outlet of the stripping gas, and the area of ​​the ejection port 34o is equivalent to the opening area of ​​the stripping gas nozzle 33.

[0156] If the front end opening 35o of the inner tube 35 is not smaller than the ejection port 34o of the outer tube 34, the front end opening 35o of the inner tube 35 cannot pass through the ejection port 34o of the outer tube 34. Therefore, the opening area of ​​the stripping gas nozzle 33 when the elastic body 36 is in the first shape, that is, the area of ​​the front end opening 35o of the inner tube 35, is smaller than the opening area of ​​the stripping gas nozzle 33 when the elastic body 36 is in the second shape, that is, the ejection port 34o of the outer tube 34. Thus, when the flow rate of the stripping gas supplied to the stripping gas nozzle 33 increases, the opening area of ​​the stripping gas nozzle 33 can be reduced, and when the flow rate of the stripping gas supplied to the stripping gas nozzle 33 decreases, the opening area of ​​the stripping gas nozzle 33 can be increased.

[0157] Next, other embodiments will be described.

[0158] Instead of using the stripping gas nozzle 33 which is an example of a nozzle with a variable opening, a first stripping gas nozzle that ejects the stripping gas at a first speed and a second stripping gas nozzle that ejects the stripping gas at a second speed may be used.

[0159] When the first stripping gas nozzle and the second stripping gas nozzle are used, the first stripping gas nozzle may be caused to eject the stripping gas at a first speed, and the second stripping gas nozzle may be caused to eject the stripping gas at a second speed toward the through hole 81 formed in the polymer film 80. Then, the second stripping gas nozzle may be moved horizontally while ejecting the stripping gas at the second speed.

[0160] In addition to or instead of bringing a heating fluid having a higher temperature than room temperature into contact with the lower surface of the substrate W, evaporation of the solvent of the polymer solution may be promoted by ejecting a heating gas having a higher temperature than room temperature toward the upper surface or the lower surface of the substrate W. In addition to or instead of transferring heat of the heating fluid to the polymer solution on the substrate W, heat of a heating plate disposed between the lower surface of the substrate W and the upper surface 12u of the spin base 12 may be transferred to the polymer solution on the substrate W. The heating plate is an example of a heat source.

[0161] In addition to or instead of directly or indirectly transferring heat from a heat source to the polymer solution on the substrate W, evaporation of the solvent of the polymer solution may be promoted by increasing the rotation speed of the substrate W. In addition to or instead of at least one of these, evaporation of the solvent of the polymer solution may be promoted by reducing the gas pressure in the space where the substrate W is arranged.

[0162] It is also possible not to perform the cleaning liquid supply process ( Figure 5 The substrate W is carried out of the chamber 4 in step S6. The liquid film of the polymer solution may be changed into the polymer film 80 without supplying a heating liquid such as hot water to the lower surface of the substrate W. In the case where the supply of the cleaning liquid and the supply of the heating liquid are not performed, the drying step ( Figure 5 The substrate W is moved out of the chamber 4 in step S7).

[0163] The substrate processing apparatus 1 is not limited to an apparatus that processes a disc-shaped substrate W, but may also be an apparatus that processes a polygonal substrate W.

[0164] Two or more of all the above-mentioned structures may be combined. Two or more of all the above-mentioned steps may be combined.

[0165] The embodiments of the present invention have been described in detail, but these are only specific examples for illustrating the technical content of the present invention. The present invention should not be limited to these specific examples. The spirit and scope of the present invention are limited only by the scope of the attached claims.

Claims

1. A substrate processing device, comprising: a substrate holder for horizontally holding a substrate whose upper surface is covered with a solid or semi-solid polymer film; at least one stripping gas nozzle, which jets stripping gas at a first speed toward the upper surface of the substrate held on the substrate holder, thereby destroying the polymer film by the pressure of the stripping gas in such a manner that a stripping portion stripped from the upper surface of the substrate and a close contact portion in close contact with the upper surface of the substrate are included in the polymer film, and then, while jetting the stripping gas at a second speed lower than the first speed toward the upper surface of the substrate held on the substrate holder, the close contact portion is changed into the stripping portion by using the stripping gas entering between the stripping portion and the substrate; and The nozzle actuator changes the distance from a position where the stripping gas impinges on the upper surface of the substrate to the center of the substrate by horizontally moving the at least one stripping gas nozzle.

2. The substrate processing device according to claim 1, wherein the nozzle actuator causes the at least one stripping gas nozzle to be located at a first ejection position where the stripping gas collides with a non-device forming area on the upper surface of the substrate when the at least one stripping gas nozzle ejects the stripping gas at the first speed, and causes the at least one stripping gas nozzle to be moved to a position where the stripping gas collides with a device forming area on the upper surface of the substrate when the at least one stripping gas nozzle ejects the stripping gas at the second speed.

3. The substrate processing apparatus according to claim 1 or 2, wherein the polymer film is a solid or semi-solid film containing a water-soluble polymer; The substrate processing apparatus further includes a cleaning liquid nozzle configured to eject a cleaning liquid containing water toward the upper surface of the substrate held by the substrate holder after the polymer film is peeled off from the upper surface of the substrate.

4. The substrate processing apparatus according to claim 3, further comprising: a cylindrical protection member for catching the polymer film and the cleaning liquid scattered from the upper surface of the substrate held by the substrate holder to the periphery of the substrate.

5. The substrate processing apparatus according to claim 1 or 2, wherein the polymer film is a solid or semi-solid film containing a water-soluble polymer; A contact angle of water with respect to the upper surface of the substrate is greater than or equal to 32 degrees.

6. The substrate processing apparatus according to claim 1 or 2, further comprising: a polymer solution nozzle for spraying a polymer solution toward the upper surface of the substrate held by the substrate holder; and A heat source generates heat for changing the liquid film of the polymer solution on the substrate into the polymer film.

7. The substrate processing apparatus according to claim 1 or 2, wherein the at least one stripping gas nozzle ejects the stripping gas toward the upper surface of the substrate held on the substrate holder until the polymer film is stripped from the upper surface of the substrate without being separated as a whole.

8. The substrate processing apparatus according to claim 1 or 2, wherein the at least one stripping gas nozzle is a stripping gas nozzle that ejects the stripping gas at the first speed and ejects the stripping gas at the second speed; The substrate processing apparatus further comprises: a flow rate regulating valve for changing a flow rate of the stripping gas supplied to the one stripping gas nozzle; The one stripping gas nozzle is a variable opening nozzle whose opening area decreases when the flow rate of the stripping gas supplied to the stripping gas nozzle increases, and whose opening area increases when the flow rate of the stripping gas supplied to the stripping gas nozzle decreases.

9. The substrate processing apparatus according to claim 8, wherein the variable opening nozzle comprises: an outer tube including a nozzle for ejecting the stripping gas; an inner tube including a front end opening for ejecting the stripping gas in the outer tube; and an elastic body supporting the inner tube in the outer tube; and When the flow rate of the stripping gas supplied into the outer tube increases to the first flow rate, the elastomer elastically deforms into the first shape in which the front end opening of the inner tube is arranged outside the outer tube when the inner tube is inserted into the nozzle of the outer tube, and when the flow rate of the stripping gas supplied into the outer tube decreases from the first flow rate to the second flow rate, the elastomer returns to the second shape in which the inner tube is entirely arranged in the outer tube.

10. A substrate processing method, comprising: a substrate holding step of horizontally holding a substrate whose upper surface is covered with a solid or semi-solid polymer film; a peeling portion forming step of causing at least one peeling gas nozzle to eject a peeling gas toward the upper surface of the substrate at a first speed, thereby destroying the polymer film by the pressure of the peeling gas in such a manner that the peeling portion peeled off from the upper surface of the substrate and the closely contacting portion closely contacting the upper surface of the substrate are included in the polymer film; and The stripping portion expansion process is performed by causing the at least one stripping gas nozzle to spray the stripping gas toward the upper surface of the substrate at a second speed that is lower than the first speed, while causing the at least one stripping gas nozzle to move horizontally, thereby utilizing the stripping gas that enters between the stripping portion and the substrate to change the close contact portion into the stripping portion.

11. The substrate processing method according to claim 10, wherein the stripping portion forming step comprises the following steps: when the at least one stripping gas nozzle ejects the stripping gas at the first speed, the at least one stripping gas nozzle is located at a first ejection position where the stripping gas collides with a non-device forming region in the upper surface of the substrate; The stripping portion enlarging step includes the step of moving the at least one stripping gas nozzle to a position where the stripping gas collides with a device forming region in the upper surface of the substrate when the at least one stripping gas nozzle ejects the stripping gas at the second speed.

12. The substrate processing method according to claim 10 or 11, wherein the polymer film is a solid or semi-solid film containing a water-soluble polymer; The substrate processing method further includes a cleaning liquid supplying step of causing a cleaning liquid nozzle to spray a cleaning liquid containing water toward the upper surface of the substrate after the polymer film is peeled off from the upper surface of the substrate.

13. The substrate processing method according to claim 12, further comprising: a catching step of catching the polymer film and the cleaning liquid scattered from the upper surface of the substrate to the periphery of the substrate by using a cylindrical protective member.

14. The substrate processing method according to claim 10 or 11, further comprising: a polymer solution supplying step of causing a polymer solution nozzle to spray a polymer solution toward the upper surface of the substrate before the peeling portion forming step; and The polymer film forming step converts the liquid film of the polymer solution on the substrate into the polymer film using heat generated by a heat source.

15. The substrate processing method according to claim 10 or 11, wherein the stripping portion expansion step includes the following step: causing the at least one stripping gas nozzle to spray the stripping gas toward the upper surface of the substrate until the polymer film is stripped from the upper surface of the substrate without separation as a whole.

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