Hydrophobilization processing apparatus, hydrophobization processing method, and computer storage medium

Abstract

The present invention provides a hydrophobization processing apparatus, a hydrophobization processing method, and a computer storage medium capable of hydrophobizing both the front surface and the back surface of a substrate. The hydrophobization apparatus for hydrophobizing a substrate comprises: a processing container for accommodating the substrate and forming a processing space; a first supply port for supplying a first gas to the substrate from above the substrate in the processing container; and a second supply port for supplying a second gas to the substrate from a position below the substrate in the processing container facing the center region of the substrate, and a hydrophobizing gas can be supplied as the first gas from the first supply port and the second gas from the second supply port.

Description

Technical Field

[0001] The invention relates to a hydrophobic treatment device, a hydrophobic treatment method and a computer storage medium. Background Art

[0002] Patent document 1 discloses a substrate processing device for forming a friction reducing film on the back side of a substrate. The substrate processing device includes: a processing container that accommodates the substrate to form a closed processing space; a heating unit that heats the back side of the substrate in the processing container; and a supply unit that supplies a material for forming the friction reducing film to the back side of the substrate in the processing container. The substrate processing device also includes: a first gas supply unit that supplies an inert gas from above the substrate in the processing container to the peripheral portion of the substrate; a second gas supply unit that supplies an inert gas from above the substrate in the processing container to a position closer to the center side of the substrate than the first gas supply unit; and an exhaust unit that exhausts the atmosphere of the processing space from around or below the substrate in the processing container.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: International Publication No. 2022 / 196336 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] The technology of the present invention can perform a hydrophobic treatment on both the front and back sides of a substrate.

[0008] Technical solutions for solving technical problems

[0009] One embodiment of the present invention is a hydrophobic treatment device for performing hydrophobic treatment on a substrate, comprising: a processing container, which accommodates the above-mentioned substrate to form a processing space; a first supply port, which supplies a first gas to the substrate from above the above-mentioned substrate in the above-mentioned processing container; and a second supply port, which supplies a second gas to the substrate from below the above-mentioned substrate in the above-mentioned processing container at a position opposite to the central area of ​​the substrate, wherein the hydrophobic gas can be supplied as the above-mentioned first gas from the above-mentioned first supply port and the above-mentioned second gas from the above-mentioned second supply port.

[0010] Effects of the Invention

[0011] According to the present invention, both the front and back surfaces of the substrate can be subjected to a hydrophobic treatment. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a cross-sectional view schematically showing the general structure of the hydrophobic treatment device according to the present embodiment.

[0013] Figure 2 It is a bottom view of the cover portion of the upper member.

[0014] Figure 3 This is a flowchart showing main steps of Example 1 of the processing flow.

[0015] Figure 4 It is a diagram showing the state of the processing container when Example 1 of the processing flow is executed.

[0016] Figure 5 It is a diagram showing the state of the processing container when Example 1 of the processing flow is executed.

[0017] Figure 6 It is a diagram showing the state of the processing container when Example 1 of the processing flow is executed.

[0018] Figure 7 This is a flowchart showing main steps of Example 2 of the processing flow.

[0019] Figure 8 This is a diagram showing the state of the processing container when Example 2 of the processing flow is executed.

[0020] Fig. 9 This is a diagram showing the state of the processing container when Example 2 of the processing flow is executed.

[0021] Fig.10 This is a flowchart showing the main steps of Example 3 of the processing flow.

[0022] Fig.11 This is a flowchart showing main steps of Example 4 of the processing flow.

[0023] Fig.12 This is a diagram for explaining Modification 1 of Example 4 of the processing flow.

[0024] Fig.13 This is a flowchart showing the main steps of Example 5 of the processing flow.

[0025] Fig.14 This is a diagram of Modification Example 2 of Example 4 for explaining the processing flow.

[0026] Fig.15 It is a diagram for explaining a modification of Example 1 of the processing flow.

[0027] Description of Reference Numerals

[0028] 1Hydrophobic treatment device

[0029] 41 First supply port

[0030] 91 Second supply port

[0031] C Processing Container

[0032] W chip. DETAILED DESCRIPTION

[0033] In the photolithography in the manufacturing process of semiconductor devices, a hydrophobic treatment is performed to improve the adhesion between a substrate such as a semiconductor wafer (hereinafter referred to as a "wafer") and a resist liquid. In the hydrophobic treatment, HMDS (Hexa Methyl Disilazane) is supplied to the surface of the substrate placed in the processing container for a predetermined time to hydrophobize the surface of the substrate. Thus, the resist film can be prevented from peeling off from the surface of the substrate in the subsequent steps. That is, the hydrophobic treatment can be said to be a close-fitting treatment that gives the film close adhesion to the surface of the substrate to be processed.

[0034] In addition, there is a case where a hydrophobic film is formed on the back of the substrate as a friction reducing film by hydrophobic treatment, etc., to alleviate the adsorption deformation when the substrate is adsorbed on the mounting table of the exposure machine and improve the overlay error. The hydrophobic treatment can be said to be a friction reducing treatment that puts the surface of the target substrate into a friction reducing state.

[0035] It is preferable to be able to perform both the hydrophobic treatment on the front side and the hydrophobic treatment on the back side of the substrate.

[0036] Thus, the technology of the present invention can perform a hydrophobic treatment on both the front and back sides of the substrate.

[0037] Hereinafter, the hydrophobic treatment device and the hydrophobic treatment method of the present embodiment will be described with reference to the accompanying drawings. In addition, in this specification and the accompanying drawings, the same reference numerals are attached to elements having substantially the same functional configuration, and repeated descriptions are omitted.

[0038] <Hydrophobic treatment device>

[0039] Figure 1 It is a cross-sectional view schematically showing the general structure of the hydrophobic treatment device according to the present embodiment. Figure 2 It is a bottom view of the cover portion of the upper member described later.

[0040] Figure 1 The hydrophobic treatment apparatus 1 includes a processing container C that accommodates a wafer W as a substrate and forms a processing space S. The processing container C includes, for example, a lower member 2 and an upper member 3 .

[0041] The lower member 2 includes a disk-shaped heat plate 20 having a radius larger than that of a wafer W as a substrate, and a flat cylindrical outer casing 21 surrounding the heat plate 20 except for the upper surface.

[0042] A heater 22 made of a resistance heating element is provided in the hot plate 20 as a heating unit. The heater 22 is divided into a plurality of parts, for example, in a concentric circle shape with the center of the hot plate 20 as the center, and can heat the surface of the hot plate 20 with high uniformity. Figure 1 In the figure, the heater 22 is divided into two for convenience of illustration.

[0043] On the surface of the hot plate 20, a plurality of (e.g., eight) gap pins 23 are provided along a circle having a radius smaller than that of the wafer W, with the center of the hot plate 20 as the center. The height of each gap pin 23 is set, for example, to be 0.1 mm from the surface of the hot plate 20. Figure 1 Only two gap pins 23 are shown in the figure.

[0044] At a portion of the hot plate 20 closer to the center than the gap pins 23, three lift pins 24 are provided along a circle centered at the center of the hot plate 20, penetrating the hot plate 20 in the circumferential direction. The three lift pins 24 are connected to a lift mechanism 26 via a lift member 25. The lift mechanism 26 has a drive source (not shown) such as a motor that generates a driving force for lifting the lift pins 24. Figure 1 Only two lift pins 24 are shown in the figure.

[0045] The upper member 3 has a flat cylindrical cover 31 in a manner covering the upper space of the lower member 2. The lower surface of the peripheral wall 32 of the cover 31 is formed in a manner that it can approach the upper surface of the outer periphery of the outer casing 21. The cover 31 is configured to be able to be raised and lowered between a first position and a second position by means of a lifting mechanism 4. The first position is a position where the lower surface of the peripheral wall 32 of the cover 31 is close to the upper surface of the outer periphery of the outer casing 21, and the second position is a position where the wafer W is delivered between an external substrate conveying mechanism (not shown) and the lifting pins 24. A processing space S is formed between the cover 31 lowered to the first position and the lower member 2. Specifically, a processing space S is formed between the top 33 of the cover 31 lowered to the first position that is opposite to the hot plate 20 and between the peripheral wall 32 and the hot plate 20.

[0046] The top 33 of the cover 31 has a first supply port 41 for supplying a first gas to the wafer W from above the wafer W in the processing container C. The first supply port 41 can selectively supply a hydrophobic gas such as HMDS gas or an inert gas such as nitrogen gas as the first gas, and opens to the processing space S.

[0047] The first supply port 41 includes, for example, a central supply port 42 and an outer peripheral supply port 43 .

[0048] The central supply port 42 is formed at a position facing a second supply port 91 described later across the wafer W in the processing container C. Specifically, the central supply port 42 is formed at a position facing the center of the hot plate 20 on the top 33 of the cover 31 .

[0049] The peripheral supply port 43 is formed at the following position. That is, as described later, the processing container C is configured to be able to be exhausted from an exhaust position outside the wafer W in the processing container C, and the peripheral supply port 43 is formed between the central supply port 42 and the exhaust position outside. Specifically, the peripheral supply port 43 is formed at a position between the central supply port 42 of the top 33 of the cover 31 and an upper peripheral exhaust port 121 described later.

[0050] The top portion 33 of the cover portion 31 further includes a central supply passage 44 extending from the central supply port 42 and an outer peripheral supply passage 45 extending from the outer peripheral supply port 43 .

[0051] The central supply passage 44 is connected to a supply pipe 46, and the supply pipe 46 is connected to a supply mechanism 52 via a branch pipe 51. The supply mechanism 52 supplies a hydrophobic gas such as HMDS to the central supply passage 44 via the branch pipe 51 and the supply pipe 46. The supply mechanism 52, for example, includes a supply source of the hydrophobic gas, i.e., a storage source (not shown), an opening and closing valve for controlling the flow of the hydrophobic gas, and a flow regulating valve (not shown). In addition, the HMDS gas is, for example, a mixed gas of HMDS vapor / mist and a carrier gas such as nitrogen. The HMDS vapor / mist is generated by a known technique such as vaporizing the HMDS liquid by a vaporizer or bubbling, so a detailed description is omitted.

[0052] In addition, the supply pipe 46 is connected to a supply mechanism 62 via a branch pipe 61. The supply mechanism 62 supplies the inert gas to the central supply passage 44 via the branch pipe 61 and the supply pipe 46. The supply mechanism 62 includes, for example, a supply source of the inert gas, i.e., a storage source (not shown), and a supply device group (not shown) including an on-off valve and a flow rate regulating valve for controlling the flow of the inert gas.

[0053] The peripheral supply passage 45 is connected to the supply pipe 47, and the supply pipe 47 is connected to the supply mechanism 72 via the branch pipe 71. The supply mechanism 72 supplies the hydrophobic gas to the peripheral supply passage 45 via the branch pipe 71 and the supply pipe 47. The supply mechanism 72 includes, for example, a supply source of the hydrophobic gas, i.e., a storage source (not shown), and a supply device group (not shown) including an on-off valve and a flow rate regulating valve for controlling the flow of the hydrophobic gas.

[0054] In addition, the supply pipe 47 is connected to a supply mechanism 82 via a branch pipe 81. The supply mechanism 82 supplies the inert gas to the peripheral supply passage 45 via the branch pipe 81 and the supply pipe 47. The supply mechanism 82 includes, for example, a supply source of the inert gas, i.e., a storage source (not shown), and a supply device group (not shown) including an on-off valve and a flow rate regulating valve for controlling the flow of the inert gas.

[0055] like Figure 2 As shown, the peripheral supply port 43 is provided in a circular shape at the peripheral portion of the top portion 33. That is, a plurality of peripheral supply ports 43 (eg, more than 100) are provided along the circumferential direction of the wafer W accommodated in the processing container C, for example.

[0056] In addition, if Figure 1 As shown, the hot plate 20 has a second supply port 91 for supplying a second gas to the wafer W from a position below the wafer W in the processing container C and opposite to the central region of the wafer W. The second supply port 91 selectively supplies a hydrophobic gas such as HMDS gas or an inert gas such as nitrogen gas as the second gas, and opens to the processing space S.

[0057] The second supply port 91 is formed at a position of the hot plate 20 facing the central region of the wafer W in the processing container C. The “position facing the central region of the wafer W” is a position at least part of which overlaps the center of the wafer W in a plan view.

[0058] The hot plate 20 further includes a supply passage 92 extending from the second supply port 91 .

[0059] The supply passage 92 is connected to a supply pipe 93, and the supply pipe 93 is connected to a supply mechanism 102 via a branch pipe 101. The supply mechanism 102 supplies the hydrophobic gas to the supply passage 92 via the branch pipe 101 and the supply pipe 93. The supply mechanism 102 includes, for example, a supply source of the hydrophobic gas, i.e., a storage source (not shown), and a supply device group (not shown) including an on-off valve and a flow regulating valve for controlling the flow of the hydrophobic gas.

[0060] In addition, the supply pipe 93 is connected to the supply mechanism 112 via the branch pipe 111. The supply mechanism 112 supplies the inert gas to the supply passage 92 via the branch pipe 111 and the supply pipe 93. The supply mechanism 112 includes, for example, a supply source of the inert gas, i.e., a storage source (not shown), and a supply equipment group (not shown) including an on-off valve and a flow regulating valve for controlling the flow of the inert gas.

[0061] The processing container C is configured to be evacuated from an exhaust position outside the wafer W in the processing container C. Specifically, the processing container C has an upper peripheral exhaust port 121 . The processing container C may also have a side exhaust port 122 .

[0062] The upper peripheral exhaust port 121 is disposed above and outside the wafer W in the processing container C and is open to the processing space S. Specifically, the upper peripheral exhaust port 121 is disposed in a circular ring shape at the peripheral edge of the top portion 33. More specifically, the upper peripheral exhaust port 121 is disposed at the outer side of the wafer W in the processing container C and is open to the processing space S. Figure 2 As shown, for example, a plurality of (eg, more than 100) wafers are provided along the circumferential direction of the wafers W accommodated in the processing container C at the peripheral portion of the top portion 33 .

[0063] The top 33 of the cover 31 is as shown in FIG. Figure 1 As shown, there is an exhaust passage 131 extending from the upper peripheral exhaust port 121. The exhaust passage 131 is connected to an exhaust mechanism 133 via an exhaust pipe 132. The exhaust mechanism 133 includes an exhaust equipment group including an exhaust device such as a vacuum pump, a valve for adjusting the exhaust amount, and the like.

[0064] The side exhaust port 122 is formed on the side of the wafer W in the processing container C and at a position lower than the upper peripheral exhaust port 121 in a manner opening to the processing space S. The side exhaust port 122 is formed in a ring shape by, for example, the lower surface of the inner side of the peripheral wall portion 32 of the cover portion 31 and the upper surface of the inner side of the peripheral portion of the outer casing 21. The side exhaust port 122 is connected to an exhaust passage 142 provided on the outer periphery of the outer casing 21, for example, via an opening 141 provided on the upper surface of the outer periphery of the outer casing 21. For example, a plurality of openings 141 and exhaust passages 142 are arranged along the circumference of the outer casing. Each exhaust passage 142 is connected to an exhaust mechanism 144 via an exhaust pipe 143. The exhaust mechanism 144 includes an exhaust device group including an exhaust device such as a vacuum pump, a valve for adjusting the exhaust volume, and the like.

[0065] Furthermore, when the processing space S is exhausted through the side exhaust port 122 and the exhaust passage 142 , the atmosphere outside the processing container C is also sucked into the exhaust passage 142 .

[0066] A recessed portion 151 is formed upwardly in a portion of the lower surface of the peripheral wall of the cover 31 that faces the opening 141. The recessed portion 151 constitutes a buffer space for uniformly exhausting the processing space S in the circumferential direction through the side exhaust port 122.

[0067] In the above hydrophobic treatment device 1, a control unit 200 for controlling the hydrophobic treatment device 1 is provided. The control unit 200 is composed of, for example, a computer including a processor such as a CPU, a memory, etc., and has a program storage unit (not shown). In the program storage unit, a program including instructions for causing the hydrophobic treatment device 1 to perform the processing flow described later is stored. For example, the lifting mechanism 4, 26, the supply mechanism 52, 62, 72, 82, 102, 112 and the exhaust mechanism 133, 144 are controlled by the control unit 200 based on the above program. In addition, the above program can be recorded in a computer-readable storage medium H, and installed in the control unit 200 from the storage medium H. The storage medium H can be temporary or non-temporary.

[0068] <Processing flow example 1>

[0069] Next, an example of a treatment flow executed by the hydrophobic treatment device 1 will be described. Figure 3 This is a flowchart showing main steps of Example 1 of the processing flow. Figures 4 to 6 1 is a diagram showing the state of the processing container C when executing Example 1 of the processing flow. Figures 4 to 6 In the figure, the lifting pin 24 and the gap pin 23 are omitted. Figures 4 to 6 In FIG. 1 , the flow of the hydrophobized gas in the processing space S is indicated by solid arrows, and the flow of the inert gas in the processing space S is indicated by dotted arrows. The same is true for the subsequent drawings.

[0070] The following steps of Example 1 of the processing flow are executed based on the program stored in the aforementioned program storage unit (not shown) under the control of the control unit 200. The same applies to examples other than Example 1 of the processing flow.

[0071] (Step S1)

[0072] Regarding a wafer W whose front and back surfaces are both subjected to hydrophobic treatment, for example, Figure 3 As shown, it is first sent into the processing container C.

[0073] Specifically, the wafer W is moved by an external substrate conveying mechanism (not shown) between the cover 31 raised to the aforementioned second position and the hot plate 20. Then, the lifting pins 24 are raised, whereby the wafer W is delivered from the substrate conveying mechanism to the lifting pins 24 and moved to the delivery position. Then, the substrate conveying mechanism withdraws from the processing container C. In addition, the cover 31 is lowered to the aforementioned first position, and the processing space S is formed by the cover 31 and the lower member 2.

[0074] At this time, the wafer W is supported by the lift pins 24 so that the center of the wafer W coincides with the center of the hot plate 20 , that is, the center of the second supply port 91 , within a predetermined allowable range.

[0075] (Step S2)

[0076] Next, the hydrophobic gas is supplied to the front surface and the hydrophobic gas is supplied to the back surface of the wafer W. Specifically, the hydrophobic gas is supplied simultaneously.

[0077] More specifically, the wafer W supported by the lift pins 24 is moved to an upper processing position above the gap pins 23. The upper processing position is a position spaced apart from the surface of the hot plate 20 and the top of the gap pins 23, for example, a position spaced 2 mm from the surface of the hot plate 20.

[0078] In this state, if Figure 4 As shown in FIG. 1 , the hydrophobic gas is supplied from the central supply port 42 to the central portion of the front surface of the wafer W, and the hydrophobic gas is supplied from the second supply port 91 to the central portion of the back surface of the wafer W. In addition, no gas is supplied from the peripheral supply port 43. In addition, the processing space S is exhausted through the upper peripheral exhaust port 121, and the processing space S is exhausted through the side exhaust port 122.

[0079] Thus, the hydrophobic gas from the central supply port 42 flows from the center of the wafer W to the outside along the front surface of the wafer W, and the hydrophobic gas from the second supply port 91 flows from the center of the wafer W to the outside along the back surface of the wafer W. As a result, a hydrophobic film can be formed on the entire front and back surfaces of the wafer W. In addition, the wafer W is spaced apart from the hot plate 20 and has a relatively low temperature, so that the physical adsorption of the constituent molecules of the hydrophobic film on the entire front and back surfaces of the wafer W can be promoted.

[0080] For example, after the supply of the hydrophobic gas starts, when a predetermined time has passed, this step S2 ends.

[0081] In this step S2, exhaust through the upper peripheral exhaust port 121 and exhaust through the side exhaust port 122 are performed in a manner such that, for example, the gas containing the hydrophobized gas does not leak out of the processing container C and the atmosphere outside the processing container C does not flow into the processing space S. Specifically, the exhaust is controlled in a manner that satisfies the following equations (a) and (b).

[0082] L1+L2<L11+L12……(a)

[0083] L11<L12……(b)

[0084] L1: Supply flow rate of the hydrophobic gas from the central supply port 42

[0085] L2: Supply flow rate of the hydrophobic gas from the second supply port 91

[0086] L11: Exhaust flow rate through the upper peripheral exhaust port 121

[0087] L12: Exhaust flow rate through the exhaust passage 142 passing through the side exhaust port 122

[0088] In addition, in the present step S2 , exhaust through the upper peripheral exhaust port 121 and exhaust through the side exhaust port 122 may be performed so as to satisfy the following formula (c).

[0089] L1+L2>L11……(c)

[0090] When the exhaust flow rate through the upper peripheral exhaust port 121 is too high, when observed from the center of the chip W on the back side of the chip W, it is difficult for the hydrophobic gas to flow into the portion corresponding to the back side of the lifting pin 24, and the hydrophobicity of the back side of the chip W is uneven within the surface. However, by satisfying the above (c), the unevenness within the surface can be suppressed.

[0091] Furthermore, in the present step S2 , exhaust through the upper outer peripheral exhaust port 121 and exhaust through the side exhaust port 122 may be performed so as to satisfy the following formula (d).

[0092] L13>L11……(d)

[0093] L13: Exhaust flow rate from the processing space S via the side exhaust port 122

[0094] By exhausting gas from both the upper peripheral exhaust port 121 close to the front side of the chip W and the side exhaust port 122 close to the back side of the chip W, it is easy to suppress the hydrophobic gas supplied to the front side from spreading to the back side (hereinafter referred to as spreading from the front side to the back side) and the hydrophobic gas supplied to the back side from spreading to the front side (hereinafter referred to as spreading from the back side to the front side).

[0095] Furthermore, during processing, there is a situation where the spatial height on the upper side of the wafer W is greater than the spatial height on the lower side of the wafer W. In this case, there is a tendency for the flow rate on the lower side to be relatively higher than that on the upper side of the wafer W, forming a high-flow airflow on the lower side of the wafer W, thereby suppressing the above-mentioned spread from the front to the back. The condition of L13>L11 in (d) above is a condition in which, when the above-mentioned spatial height relationship is achieved, a high flow rate is formed on the lower side of the wafer W, and the airflow on the lower side of the wafer W, i.e., the airflow on the back side, is urged to flow to the lower side exhaust port 122 rather than the upper peripheral exhaust port 121. Therefore, it can be considered that this condition is satisfactory for both the spread from the front to the back and the spread from the back to the front.

[0096] Under the condition of L12>L13, the atmosphere outside the processing container C is sucked into the exhaust passage 142 together with the gas in the processing space S by exhaust through the exhaust passage 142, and the gas in the processing space S can be suppressed from leaking to the outside of the processing container C. That is, when the above-mentioned spatial height relationship is achieved, under the condition of L12>L13>L11, the gas including the hydrophobized gas can be suppressed from leaking to the outside of the processing container C, and the above-mentioned spreading between the front side and the back side of the wafer W can be prevented. In addition, as an example of a structure in which the condition of L12>L13 is satisfied, it can be cited that the gap of the side exhaust port 122 is set larger than the gap that connects the exhaust passage 142 and the space outside the processing container C on the outside thereof.

[0097] (Step S3)

[0098] Next, heat treatment is performed on the front side and the back side of the wafer W. Specifically, these heat treatments are performed simultaneously.

[0099] More specifically, the supply of the hydrophobic gas from the central supply port 42 to the central portion of the front surface of the wafer W and the supply of the hydrophobic gas from the second supply port 91 to the central portion of the back surface of the wafer W are stopped. At the same time, the lifting pins 24 are lowered, and the wafer W is moved as shown in FIG. Figure 5 As shown, the wafer W is placed on the hot plate 20, that is, it is transferred from the lifting pins 24 to the gap pins 23. As a result, the wafer W is heated, and the hydrophobic film formed on the front and back sides of the wafer W is heat-treated at a relatively high temperature, thereby promoting the chemical adsorption of the constituent molecules of the hydrophobic film on the front and back sides of the wafer W.

[0100] For example, after the wafer W is placed on the hot plate 20, when a predetermined time has passed, this step S3 ends.

[0101] In this step S3, exhaust of the processing space S through the upper peripheral exhaust port 121 and exhaust of the processing space S through the side exhaust port 122 are continuously performed from step S2. In addition, inert gas is not supplied from the central supply port 42 and the second supply port 91, and no gas is supplied from the peripheral supply port 43.

[0102] During the heat treatment in step S3 , the hydrophobic gas and the inert gas are supplied from the second supply port 91 to the back surface of the wafer W, thereby preventing the wafer W from floating from the hot plate 20 .

[0103] (Step S4)

[0104] Next, the atmosphere in the processing container C is replaced with an inert gas.

[0105] Specifically, the lift pins 24 are raised, the wafer W is transferred from the heat plate 20 to the lift pins 24, and the wafer W is moved to a replacement position above the gap pins 23. The replacement position may be the same as the upper processing position described above.

[0106] In this state, if Figure 6 As shown in FIG. 1 , the inert gas is supplied from the central supply port 42 to the central portion of the front surface of the wafer W, and the inert gas is supplied from the second supply port 91 to the central portion of the back surface of the wafer W. In addition, the inert gas is not supplied from the peripheral supply port 43 in this example, but it may be supplied. In addition, the exhaust of the processing space S through the upper peripheral exhaust port 121 and the exhaust of the processing space S through the side exhaust port 122 are continuously performed from step S2 and step S3.

[0107] Thus, the hydrophobic gas in the processing space S is replaced with the inert gas. When the replacement is performed, as described above, when the wafer W is moved to the replacement position and is spaced apart from the hot plate 20 (specifically, the gap pins 23), it is possible to suppress the hydrophobic gas near the back surface of the wafer W from remaining in the processing container C during the replacement.

[0108] For example, when a predetermined time has passed after the inert gas supply starts, this step S4 ends.

[0109] In addition, the sum of the supply flow rate L21 of the inert gas from the central supply port 42 and the supply flow rate L22 of the inert gas from the second supply port 91 in this step S4 may be less than the sum of the supply flow rate L1 of the hydrophobized gas from the central supply port 42 and the supply flow rate L2 of the hydrophobized gas from the second supply port 91 in step S2. That is, L21+L22≤L1+L2. Thus, in step S4, the sum (L11+L12) of the exhaust flow rate L11 through the upper peripheral exhaust port 121 and the exhaust flow rate L12 through the side exhaust port 122 and through the exhaust passage 142 is not changed from step S2, so that the gas containing the hydrophobized gas can be suppressed from leaking out of the processing container C.

[0110] In addition, when L21+L22>L1+L2, in step S4, in order to suppress the gas containing the hydrophobized gas from leaking out of the processing container C, it is necessary to make L11+L12 higher than that in step S2, so that the replacement efficiency of the atmosphere in the processing container C can be improved. That is, in step S4, by making the total supply flow rate and the total exhaust volume of the inert gas higher than those in step S2, the replacement efficiency of the atmosphere in the processing container C can be improved. In this case, by increasing the total supply flow rate of the inert gas after increasing the total exhaust volume, the gas containing the hydrophobized gas can be suppressed from leaking out of the processing container C.

[0111] (Step S5)

[0112] Then, the wafer W is carried out of the processing container C.

[0113] Specifically, for example, the supply of the inactive gas from the central supply port 42 to the central portion of the front surface of the wafer W and the supply of the inactive gas from the second supply port 91 to the central portion of the back surface of the wafer W are stopped, and then the exhaust of the processing space S through the upper peripheral exhaust port 121 and the exhaust of the processing space S through the side exhaust port 122 are also stopped. Next, the cover 31 is raised to the aforementioned second position, and the lifting pins 24 are raised, and the wafer W is raised to the handover position while being supported by the lifting pins 24. Next, after the substrate conveying mechanism is inserted into the processing container C between the cover 31 and the hot plate 20, the lifting pins 24 are lowered to hand over the wafer W to the substrate conveying mechanism. Thereafter, by withdrawing the substrate conveying mechanism from the processing container C, the wafer W can be sent out of the processing container C.

[0114] In this way, a series of processing flows are completed.

[0115] According to Example 1 of the process flow, compared with Example 2 of the process flow described later, the wafer W is at a low temperature when the hydrophobizing gas is supplied to the front surface, so that the amount of molecules constituting the hydrophobic film physically adsorbed to the front surface of the wafer is large. Therefore, the contact angle of the hydrophobic film on the front surface of the wafer W can be increased.

[0116] In addition, the purpose of forming the hydrophobic film on the front surface of the wafer W is, for example, to improve the adhesion between the resist film formed later and the wafer W. In addition, the purpose of forming the hydrophobic film on the back surface of the wafer W is, for example, to improve the overlay error during exposure as described above by utilizing the friction reduction film as the hydrophobic film.

[0117] <Processing flow example 2>

[0118] Figure 7 This is a flowchart showing main steps of Example 2 of the processing flow. Figure 8 and Fig. 9 FIG. 1 is a diagram showing the state of the processing container C when Example 2 of the processing flow is executed.

[0119] Example 2 of the process flow can be applied to a wafer W whose front and back sides are both subjected to hydrophobic treatment in the same manner as Example 1 of the process flow. However, in Example 1 of the process flow, the hydrophobic gas is supplied to the front side of the wafer W and the hydrophobic gas is supplied to the back side at the same time, whereas in Example 2 of the process flow, these supplies are performed sequentially, specifically, the hydrophobic gas is supplied to the front side of the wafer W and the hydrophobic gas is supplied to the back side sequentially. This will be described in more detail below.

[0120] (Step S11)

[0121] In the processing flow example 2, if Figure 7 As shown, after step S1, the supply of the hydrophobizing gas to the front surface of the wafer W and the heat treatment of the front surface of the wafer W are performed. Specifically, these are performed simultaneously.

[0122] More specifically, the lift pins 24 are lowered to move the wafer W as shown in FIG. Figure 8 The wafer W is placed on the hot plate 20 as shown, that is, the wafer W is handed over from the lifting pins 24 to the gap pins 23. In addition, the hydrophobic gas is supplied from the central supply port 42 to the front center of the wafer W. In addition, no gas is supplied from the second supply port 91 and the peripheral supply port 43. In addition, the processing space S is exhausted through the upper peripheral exhaust port 121 and the processing space S is exhausted through the side exhaust port 122.

[0123] Thus, the hydrophobic gas from the central supply port 42 flows from the center of the wafer W toward the outside along the front surface of the wafer W. As a result, a hydrophobic film can be formed on the entire front surface of the wafer W.

[0124] Furthermore, by heating the wafer W using the hot plate 20 , the water-repellent film formed on the front surface of the wafer W can be thermally treated.

[0125] For example, after the wafer W is placed on the hot plate 20 and the supply of the hydrophobic gas is started, when a predetermined time has passed, the present step S11 is terminated.

[0126] (Step S12)

[0127] Next, the back surface of the wafer W is supplied with a hydrophobic gas.

[0128] Specifically, the lift pins 24 are raised, and the wafer W is transferred from the hot plate 20 to the lift pins 24 and moved to the aforementioned upper processing position.

[0129] In this state, if Fig. 9 As shown, the hydrophobic gas is supplied from the second supply port 91 to the center of the back surface of the wafer W. In addition, the processing space S is exhausted through the upper peripheral exhaust port 121 and the processing space S is exhausted through the side exhaust port 122.

[0130] Thus, the hydrophobic gas from the second supply port 91 flows from the center of the wafer W to the outside along the back surface of the wafer W. As a result, a hydrophobic film can be formed on the entire back surface of the wafer W.

[0131] Furthermore, the inert gas is supplied from the central supply port 42 to the central portion of the front surface of the wafer W, and from the peripheral supply port 43 to the peripheral portion of the front surface of the wafer W. Thus, the hydrophobic gas supplied to the back surface of the wafer W can be prevented from spreading to the front surface of the wafer W.

[0132] In addition, the hydrophobic gas is not supplied from the central supply port 42 and the outer peripheral supply port 43 .

[0133] In this step S12, exhaust through the upper peripheral exhaust port 121 and exhaust through the side exhaust port 122 are performed, for example, in such a manner that the gas containing the hydrophobized gas does not leak out of the processing container C and the atmosphere outside the processing container C does not flow into the processing space S. Specifically, control is performed in such a manner that the aforementioned formula (b) and the following formula (e) are satisfied.

[0134] L21+L23+L2<L11+L12……(e)

[0135] L23: Supply flow rate of the inert gas from the outer peripheral supply port 43

[0136] In addition, in the present step S12, exhaust through the upper outer peripheral exhaust port 121 and exhaust through the side exhaust port 122 may be performed so as to satisfy the following formula (f).

[0137] L21+L23+L2>L11……(f)

[0138] When the exhaust flow rate through the upper peripheral exhaust port 121 is too large (too high), when observed from the center of the chip W on the back side of the chip W, although the hydrophobic gas is difficult to flow into the part corresponding to the back of the lifting pin 24, the hydrophobicity of the back side of the chip W becomes uneven within the surface, but by satisfying the above (f), such a situation can be suppressed.

[0139] In addition, in this step S12, similarly to the aforementioned step S2, exhaust through the upper peripheral exhaust port 121 and exhaust through the side exhaust port 122 may be performed so as to satisfy the aforementioned formula (d).

[0140] (Step S13)

[0141] Next, heat treatment is performed on the back surface of the wafer W. Specifically, heat treatment on the back surface of the wafer W and re-heat treatment on the front surface of the wafer W are performed simultaneously.

[0142] More specifically, the supply of the hydrophobic gas from the second supply port 91 to the center of the back side of the wafer W, the supply of the inert gas from the central supply port 42 to the center of the front side of the wafer W, and the supply of the inert gas from the peripheral supply port 43 to the peripheral side of the front side of the wafer W are stopped. Figure 5 Similarly, the wafer W is placed on the hot plate 20, that is, transferred from the lift pins 24 to the gap pins 23. Thus, the wafer W is heated, the hydrophobic film formed on the back side of the wafer W is heat-treated, and the hydrophobic film formed on the front side of the wafer W is heat-treated again.

[0143] For example, after the wafer W is placed on the hot plate 20 , when a predetermined time has passed, this step S13 ends.

[0144] In step S13 , exhaust of the processing space S through the upper peripheral exhaust port 121 and exhaust of the processing space S through the side exhaust port 122 are continued from step S12 . No gas is supplied from the central supply port 42 and the peripheral supply port 43 .

[0145] Thereafter, step S4 and step S5 are performed in the same manner as in example 1 of the processing flow.

[0146] <Processing flow example 3>

[0147] Fig.10 This is a flowchart showing the main steps of Example 3 of the processing flow.

[0148] In Example 3 of the process flow, the hydrophobic gas is sequentially supplied to the front side of the wafer W and the hydrophobic gas is sequentially supplied to the back side of the wafer W, similarly to Example 2 of the process flow. However, in Example 3 of the process flow, the difference from Example 2 of the process flow is that the hydrophobic gas is sequentially supplied to the back side of the wafer W and the hydrophobic gas is sequentially supplied to the front side. This will be described in more detail below.

[0149] (Step S21)

[0150] In example 3 of the processing flow, if Fig.10 As shown, after step S1, step S12 of Example 2 of the process flow is performed, i.e., hydrophobizing gas is supplied to the back side of the wafer W. Thereafter, hydrophobizing gas is supplied to the front side of the wafer W, and heat treatment is performed on the front side and the back side of the wafer W. Specifically, these are performed simultaneously.

[0151] More specifically, the lift pins 24 are lowered to place the wafer W on the hot plate 20, that is, the wafer W is transferred from the lift pins 24 to the gap pins 23. Figure 8 Similarly, the hydrophobic gas is supplied from the central supply port 42 to the front center of the wafer W. Specifically, the supply of the hydrophobic gas from the second supply port 91, the supply of the inert gas from the central supply port 42, and the supply of the inert gas from the peripheral supply port 43 in step S12 are stopped, and the hydrophobic gas is supplied from the central supply port 42 to the front center of the wafer W. In addition, the exhaust of the processing space S through the upper peripheral exhaust port 121 and the exhaust of the processing space S through the side exhaust port 122 are continuously performed from step S12.

[0152] Thus, the hydrophobic gas from the central supply port 42 flows from the center of the wafer W toward the outside along the front surface of the wafer W. As a result, a hydrophobic film can be formed on the entire front surface of the wafer W.

[0153] In addition, by heating the wafer W with the hot plate 20 , the water-repellent films formed on the front and back surfaces of the wafer W can be heat-treated.

[0154] For example, after the wafer W is placed on the hot plate 20 and the supply of the hydrophobic gas is started, when a predetermined time has passed, the present step S21 is terminated.

[0155] Thereafter, step S4 and step S5 are performed in the same manner as in example 1 of the processing flow.

[0156] According to Example 3 of the process flow, the number of steps is small compared to Example 2 of the process flow, so it is possible to shorten the time required to hydrophobize both the front and back sides of the wafer W. In addition, the hydrophobization treatment of the front side of the wafer W is performed in the same manner as the device that only performs the hydrophobization treatment on the existing front side, so in the adjustment of the hydrophobization treatment conditions of the front side that places more emphasis on uniformity, etc., the findings obtained using the above-mentioned existing device can be utilized. That is, regarding the hydrophobization treatment of the front side of the wafer W, the interchangeability with the above-mentioned existing device is high.

[0157] In step S21, when the hydrophobic gas is supplied from the central supply port 42 to the central portion of the front surface of the wafer W, the following may be performed. That is, the supply of the hydrophobic gas from the second supply port 91 in step S12 may be stopped, and then the supply of the inactive gas from the central supply port 42 in step S12 may be similarly stopped, and then the supply of the hydrophobic gas from the central supply port 42 may be started, and the supply of the inactive gas from the peripheral supply port 43 may be stopped. Thus, the hydrophobic gas supplied from the central supply port 42 to the front surface of the wafer W may be more reliably prevented from spreading to the back surface of the wafer W.

[0158] <Processing flow example 4>

[0159] Fig.11 This is a flowchart showing main steps of Example 4 of the processing flow.

[0160] The processing flow example 4 is different from the processing flow example 1 and the like in that it can be applied to a wafer W whose front surface only is subjected to the hydrophobic treatment.

[0161] In example 4 of the processing flow, if Fig.11 As shown, after step S1 , step S11 is performed, that is, supply of the hydrophobizing gas to the front surface of the wafer W and heat treatment of the front surface of the wafer W are performed. Specifically, these are performed simultaneously after step S1 .

[0162] Thereafter, step S4 and step S5 are performed.

[0163] This processing flow is highly compatible with an apparatus that performs hydrophobic treatment on only the front surface of an existing wafer W.

[0164] <Variation 1 of Example 4 of Processing Flow>

[0165] Fig.12 This is a diagram for explaining Modification 1 of Example 4 of the processing flow.

[0166] In Example 4 of the above processing flow, the supply of hydrophobic gas to the front side of chip W and the heat treatment of the front side of chip W are performed simultaneously. However, it is also possible to supply hydrophobic gas to the front side of chip W and then perform the heat treatment of the front side of chip W.

[0167] In this case, for example, when the wafer W supported by the lift pins 24 is moved to the above-mentioned upper processing position, Fig.12 As shown, the hydrophobic gas is supplied from the central supply port 42 to the center of the front surface of the wafer W. In addition, the processing space S is exhausted through the upper peripheral exhaust port 121 and the processing space S is exhausted through the side exhaust port 122.

[0168] Thus, the hydrophobic gas from the central supply port 42 flows from the center of the wafer W toward the outside along the front surface of the wafer W. As a result, a hydrophobic film can be formed on the entire front surface of the wafer W.

[0169] Furthermore, the inert gas is supplied from the second supply port 91 to the center portion of the back surface of the wafer W. Thus, the hydrophobic gas supplied to the front surface of the wafer W can be prevented from spreading to the back surface of the wafer W.

[0170] In addition, the hydrophobicizing gas is not supplied from the second supply port 91 , and no gas is supplied from the outer peripheral supply port 43 .

[0171] At this time, exhaust through the upper peripheral exhaust port 121 and exhaust through the side exhaust port 122 are performed, for example, in such a manner that the gas containing the hydrophobized gas does not leak out of the processing container C and the atmosphere outside the processing container C does not flow into the processing space S. Specifically, the control is performed in such a manner that the aforementioned formula (b) and the following formula (g) are satisfied.

[0172] L1+L22<L11+L12……(g)

[0173] For example, after the supply of the hydrophobic gas is started, when a predetermined time has elapsed, the hydrophobic gas supply step is terminated.

[0174] After that, the supply of the hydrophobic gas from the central supply port 42 to the central portion of the front surface of the wafer W and the supply of the inactive gas from the second supply port 91 to the central portion of the back surface of the wafer W are stopped. Figure 5 The wafer W is similarly placed on the hot plate 20, that is, transferred from the lift pins 24 to the gap pins 23. As a result, the wafer W is heated, and the water-repellent film formed on the front surface of the wafer W is thermally processed.

[0175] For example, after the wafer W is placed on the hot plate 20, when a predetermined time has passed, the heat treatment step is completed.

[0176] Compared with Example 4 of the process flow, in this modification, when the hydrophobic gas is supplied to the front, the wafer W is at a low temperature, so the amount of physical adsorption of the constituent molecules of the hydrophobic film on the front of the wafer is relatively large. Furthermore, compared with Example 4 of the process flow, when the hydrophobic gas is supplied to the front, the wafer W is close to the central supply port 42, so the hydrophobic gas is violently sprayed onto the wafer W. Therefore, the contact angle of the hydrophobic film on the front of the wafer W can be increased. In addition, when the hydrophobic gas is supplied to the front, an inactive gas is supplied to the back, so compared with Example 4 of the process flow, the hydrophobic gas can be more reliably suppressed from spreading to the back.

[0177] <Processing flow example 5>

[0178] Fig.13 This is a flowchart showing the main steps of Example 5 of the processing flow.

[0179] The processing flow example 5 is different from the processing flow example 1 and the like in that it can be applied to a wafer W whose back surface only is subjected to the hydrophobic treatment.

[0180] In Example 5 of the processing flow, if Fig.13 As shown, step S12 and step S13 are performed after step S1, that is, supply of hydrophobic gas to the back side of wafer W and heat treatment of the back side of wafer W are performed. Specifically, after step S1, supply of hydrophobic gas to the back side of wafer W and heat treatment of the back side of wafer W are performed in sequence.

[0181] Thereafter, step S4 and step S5 are performed.

[0182] <Variation 2 of Example 4 of Processing Flow>

[0183] Fig.14 This is a diagram of Modification Example 2 of Example 4 for explaining the processing flow.

[0184] In the above processing flow example 4 and its variation 1, when only the front side of the wafer W is subjected to hydrophobic treatment, the entire front side is subjected to hydrophobic treatment, that is, a hydrophobic film is formed on the entire front side. Alternatively, when only the front side of the wafer W is subjected to hydrophobic treatment, only the peripheral portion of the front side is subjected to hydrophobic treatment, that is, a hydrophobic film is formed only on the peripheral portion of the front side.

[0185] In this case, for example, when the wafer W supported by the lift pins 24 is moved to the above-mentioned upper processing position, Fig.14 As shown, the hydrophobic gas is supplied from the peripheral supply port 43 to the front peripheral portion of the wafer W. In addition, the processing space S is exhausted through the upper peripheral exhaust port 121 and the processing space S is exhausted through the side exhaust port 122.

[0186] Thus, the hydrophobic gas from the peripheral supply port 43 flows along the front surface of the wafer W toward the outside of the wafer W. As a result, a hydrophobic film can be formed on the front peripheral portion of the wafer W (including the inclined surface portion).

[0187] Furthermore, the inert gas is supplied from the central supply port 42 to the central portion of the front surface of the wafer W. By the supply of the inert gas and the above-mentioned exhaust, the inert gas flows from the center of the wafer W to the outside along the front surface of the wafer W, thereby preventing the hydrophobic gas from being attached to a position inside the outer peripheral portion of the front surface.

[0188] In addition, an inert gas is supplied from the second supply port 91 to the central portion of the back side of the wafer W. By the supply of the inert gas and the above-mentioned exhaust, the inert gas flows from the center of the wafer W to the outside along the back side of the wafer W, thereby preventing the hydrophobic gas supplied to the front side of the wafer W from spreading to the back side of the wafer W.

[0189] For example, after the supply of the hydrophobic gas is started, when a predetermined time has elapsed, the hydrophobic gas supply step is terminated.

[0190] After that, the supply of the hydrophobic gas from the peripheral supply port 43 to the front peripheral portion of the wafer W, the supply of the inert gas from the central supply port 42 to the front central portion of the wafer W, and the supply of the inert gas from the second supply port 91 to the back central portion of the wafer W are stopped. Then, the lifting pins 24 are lowered to move the wafer W and the wafer W to the wafer W. Figure 5 The wafer W is similarly placed on the hot plate 20, that is, transferred from the lift pins 24 to the gap pins 23. Thus, the wafer W is heated, and the water-repellent film formed on the outer peripheral portion of the front surface of the wafer W is thermally processed.

[0191] For example, after the wafer W is placed on the hot plate 20, when a predetermined time has passed, the heat treatment step is completed.

[0192] By performing a hydrophobic treatment only on the outer peripheral portion of the front side of the chip W as in the present variation, even if there is water on a stage for mounting the chip W in, for example, a liquid immersion exposure apparatus, it is possible to prevent the water from spreading to the back side of the chip W and causing defects.

[0193] <Modification of Example 1 of Processing Flow>

[0194] Fig.15It is a diagram for explaining a modification of Example 1 of the processing flow.

[0195] In Example 1 of the above processing flow, when the hydrophobic treatment is performed on both the front and back sides of the wafer W, the entire front side is hydrophobicized, that is, a hydrophobic film is formed on the entire side. Alternatively, when the hydrophobic treatment is performed on both the front and back sides of the wafer W, only the peripheral portion of the front side is hydrophobicized, that is, a hydrophobic film is formed only on the peripheral portion of the front side.

[0196] In this case, for example, when the wafer W supported by the lift pins 24 is moved to the above-mentioned upper processing position, Fig.15 As shown, the hydrophobic gas is supplied from the peripheral supply port 43 to the front peripheral portion of the wafer W, and the hydrophobic gas is supplied from the second supply port 91 to the back central portion of the wafer W. In addition, the processing space S is exhausted through the upper peripheral exhaust port 121 and the processing space S is exhausted through the side exhaust port 122.

[0197] Thus, the hydrophobic gas from the peripheral supply port 43 flows along the front surface of the wafer W toward the outside of the wafer W, and the hydrophobic gas from the second supply port 91 flows along the back surface of the wafer W from the center of the wafer W toward the outside. As a result, a hydrophobic film can be formed on the peripheral portion of the front surface of the wafer W, and a hydrophobic film can be formed on the entire back surface of the wafer W.

[0198] Furthermore, the inert gas is supplied from the central supply port 42 to the central portion of the front surface of the wafer W. By the supply of the inert gas and the above-mentioned exhaust, the inert gas flows from the center of the wafer W to the outside along the front surface of the wafer W, thereby preventing the hydrophobic gas from being attached to a position inside the outer peripheral portion of the front surface.

[0199] For example, when a predetermined time has elapsed after the supply of the hydrophobic gas has started, the hydrophobic gas supply step is terminated.

[0200] After that, the supply of the hydrophobic gas from the peripheral supply port 43 to the front peripheral portion of the wafer W, the supply of the hydrophobic gas from the second supply port 91 to the rear central portion of the wafer W, and the supply of the inert gas from the central supply port 42 to the front central portion of the wafer W are stopped. Then, the lifting pins 24 are lowered to move the wafer W and Figure 5 The wafer W is similarly placed on the hot plate 20, that is, transferred from the lift pins 24 to the gap pins 23. The wafer W is heated, and the water-repellent film formed on the outer peripheral portion of the front surface and the entire back surface of the wafer W is thermally processed.

[0201] For example, after the wafer W is placed on the hot plate 20, when a predetermined time has passed, the heat treatment step is completed.

[0202] In this variation, as in variation 2 of example 4 of the processing flow, even if there is water on the mounting table for the chip W in a liquid immersion exposure apparatus, for example, it is possible to prevent the water from spreading to the back side of the chip W and causing defects.

[0203] In addition, it is also possible that after the hydrophobic gas is supplied to the back side of the wafer W, the hydrophobic gas is supplied to the front peripheral portion of the wafer W. In this case, the height of the wafer W when the hydrophobic gas is supplied to the front peripheral portion of the wafer W can be made higher than the height of the wafer W when the hydrophobic gas is supplied to the back side of the wafer W, (making the wafer W) close to the peripheral supply port 43. Thus, the range of diffusion until the hydrophobic gas supplied from the peripheral supply port 43 reaches the front peripheral portion of the wafer W is narrowed, and the part that the hydrophobic gas on the front side of the wafer W reaches well and the part that is not easy to reach become clearer. Therefore, the range of forming a hydrophobic film on the front peripheral portion of the wafer W can be controlled with higher precision.

[0204] <Another Modification of Example 1 of Processing Flow>

[0205] When performing the heat treatment on the front and back sides of the wafer in step S3, in the above example, the supply of the hydrophobizing gas to the front center is stopped. Alternatively, the supply of the hydrophobizing gas to the front center may be continued. Thus, the hydrophobizing of the front side of the wafer W can be further promoted.

[0206] In addition, when performing the heat treatment on the front and back sides of the wafer in step S3, in the above example, the supply of the hydrophobizing gas to the back side center is also stopped. Alternatively, the hydrophobizing gas may be supplied to the back side center at a low flow rate to such an extent that the wafer W does not float from the hot plate 20. Thus, the hydrophobizing of the back side of the wafer W can be further promoted.

[0207] <Main Effects of the Present Embodiment>

[0208] As described above, according to the present embodiment, both the front surface and the back surface of the wafer W can be subjected to the hydrophobic treatment.

[0209] In addition, according to the hydrophobic treatment device 1 and the hydrophobic treatment method of this embodiment, which are capable of performing hydrophobic treatment on both the front and back sides of the chip W, it is possible to not only treat the chip W whose front and back sides are the objects of hydrophobic treatment, but also treat the chip W whose front side or only the back side is the object of hydrophobic treatment.

[0210] Furthermore, according to the present embodiment, only the outer peripheral portion of the front surface of the wafer W can be subjected to the hydrophobic treatment.

[0211] <Other Modifications>

[0212] When supplying the hydrophobic gas to the front surface of the wafer W, the hydrophobic gas may be supplied from the central supply port 42 and the inert gas may be supplied from the peripheral supply port 43. Thus, a hydrophobic film can be formed only on the front surface of the wafer W except for its peripheral portion.

[0213] It can also be that, corresponding to the substrate as the processing object, the hydrophobic treatment of the front side of the substrate and the hydrophobic treatment of the back side of the substrate are selectively carried out. According to the difference of the substrate as the processing object, there are various situations such as different characteristics of the substrate itself, different uses and purposes afterwards, therefore, it can also be that the hydrophobic treatment device and the hydrophobic treatment method of the present invention are respectively used according to the situation that only the front side is hydrophobicized, only the back side is hydrophobicized, and the situation that both the front side and the back side are hydrophobicized. In addition, it can also be considered that the hydrophobic treatment is not carried out according to the difference of the situation.

[0214] It should be considered that the embodiments described in this specification are illustrative in all aspects and are not restrictive. The above embodiments may also be omitted, replaced, or changed in various ways without exceeding the scope of the invention. For example, the constituent elements of the above embodiments may be combined in any way. Of course, the effects and effects corresponding to the constituent elements in the combination can be obtained from any combination, and those skilled in the art can obtain other obvious effects and effects based on the description of this specification.

[0215] In addition, the effects described in this specification are only used to illustrate or exemplify the present invention and are not restrictive. That is, the technology of the present invention can achieve other obvious effects that can be obtained by those skilled in the art based on the description of this specification in addition to or instead of the above-mentioned effects.

[0216] In addition, the configuration examples described below also belong to the technical scope of the present invention.

[0217] (1) A hydrophobic treatment device for performing hydrophobic treatment on a substrate, comprising:

[0218] A processing container, which accommodates the substrate to form a processing space;

[0219] a first supply port for supplying a first gas to the substrate from above the substrate in the processing container; and

[0220] a second supply port for supplying a second gas to the substrate from a position below the substrate in the processing container and facing a central region of the substrate;

[0221] As the first gas from the first supply port and the second gas from the second supply port, a hydrophobic gas may be supplied.

[0222] (2) The hydrophobic treatment device according to (1), wherein:

[0223] The first supply port has a central supply port, and the central supply port is formed at a position opposite to the second supply port across the substrate in the processing container.

[0224] When the hydrophobic treatment is performed on the front surface of the substrate whose front surface and back surface are both subjected to the hydrophobic treatment, the hydrophobic gas as the first gas is supplied from the central supply port.

[0225] (3) The hydrophobic treatment device according to (2), wherein:

[0226] With respect to the substrate whose front surface and back surface are both subjected to the hydrophobic treatment, the hydrophobic gas is supplied to the front surface and back surface simultaneously.

[0227] (4) The hydrophobic treatment device according to (2), wherein:

[0228] With respect to the substrate having both the front surface and the back surface being the target of the hydrophobic treatment, the supply of the hydrophobic gas to the front surface and the supply of the hydrophobic gas to the back surface are sequentially performed.

[0229] (5) The hydrophobic treatment device according to (1), wherein:

[0230] The first supply port has a central supply port, and the central supply port is formed at a position opposite to the second supply port across the substrate in the processing container.

[0231] For the substrate having only the front surface being subjected to the hydrophobic treatment, when the front surface is subjected to the hydrophobic treatment, the hydrophobic gas is supplied as the first gas from the central supply port, and the inert gas is supplied as the second gas from the second supply port.

[0232] (6) The hydrophobic treatment device according to any one of (1) to (5), wherein:

[0233] It also has an upper peripheral exhaust port, which is arranged above and outside the substrate in the processing container and opens to the processing space.

[0234] When the hydrophobic gas is supplied into the processing container, the processing container is exhausted from the upper peripheral exhaust port.

[0235] (7) The hydrophobic treatment device according to (1), wherein:

[0236] The processing container is configured to be able to exhaust the interior of the processing container from an exhaust position outside the substrate.

[0237] The first supply port has:

[0238] a central supply port formed at a position opposite to the second supply port across the substrate in the processing container; and

[0239] The peripheral supply port is formed between the central supply port and the outer exhaust position.

[0240] When only the peripheral portion of the front surface of the substrate in the processing container is subjected to a hydrophobic treatment, the inert gas is supplied as the first gas from the central supply port, and the hydrophobic gas is supplied as the first gas from the peripheral supply port.

[0241] (8) A method for hydrophobizing a substrate, comprising:

[0242] A step of selectively supplying a hydrophobic gas from at least any one of a first supply port and a second supply port, wherein the first supply port is arranged above the substrate in a processing container forming a processing space, and the second supply port is arranged below the substrate in the processing container at a position opposite to the central area of ​​the substrate.

[0243] (9) The hydrophobic treatment method according to (8), wherein:

[0244] The first supply port has a central supply port, and the central supply port is formed at a position opposite to the second supply port across the substrate in the processing container.

[0245] In the step of selectively supplying the hydrophobizing gas, with respect to the substrate whose front and back surfaces are both subjected to the hydrophobizing treatment, the hydrophobizing gas is supplied from the central supply port to the front surface.

[0246] (10) The hydrophobic treatment method according to (9), wherein:

[0247] In the step of selectively supplying the hydrophobizing gas, the hydrophobizing gas is supplied simultaneously to the front surface and the back surface of the substrate, both of which are the target of the hydrophobizing treatment.

[0248] (11) The hydrophobic treatment method according to (9), wherein:

[0249] In the step of selectively supplying the hydrophobicizing gas, for the substrate whose front and back surfaces are both subjected to hydrophobic treatment, the hydrophobicizing gas is supplied to the front surface and to the back surface in sequence.

[0250] (12) The hydrophobic treatment method according to (8), wherein:

[0251] The first supply port has a central supply port, and the central supply port is formed at a position opposite to the second supply port across the substrate in the processing container.

[0252] In the step of selectively supplying the hydrophobizing gas, the hydrophobizing gas is supplied from the central supply port and the inert gas is supplied from the second supply port to the substrate having only the front surface thereof subjected to the hydrophobizing treatment.

[0253] (13) The hydrophobic treatment method according to any one of (8) to (12), wherein:

[0254] In the step of selectively supplying the hydrophobic gas, the processing container is exhausted from the upper peripheral exhaust port.

[0255] The upper peripheral exhaust port is disposed above and outside the substrate in the processing container and opens to the processing space.

[0256] (14) The hydrophobic treatment method according to (8), wherein:

[0257] The processing container is configured to be able to exhaust the interior of the processing container from an exhaust position that is located outside the substrate.

[0258] The first supply port has:

[0259] a central supply port formed at a position opposite to the second supply port across the substrate in the processing container; and

[0260] The peripheral supply port is formed between the central supply port and the outer exhaust position.

[0261] In the step of selectively supplying the hydrophobizing gas, the inert gas is supplied from the central supply port and the hydrophobizing gas is supplied from the peripheral supply port to the substrate whose front surface only has an outer peripheral portion to be hydrophobized.

[0262] (15) A computer-readable storage medium, wherein:

[0263] The computer storage medium stores a program running on a computer as a control unit, and the control unit controls the hydrophobic treatment device so that the hydrophobic treatment method for hydrophobicizing a substrate is performed by the hydrophobic treatment device.

[0264] The hydrophobic treatment method includes a step of selectively supplying a hydrophobic gas from at least any one of a first supply port and a second supply port, wherein the first supply port is arranged above the substrate in a processing container forming a processing space, and the second supply port is arranged below the substrate in the processing container at a position opposite to the central area of ​​the substrate.

Claims

1. A hydrophobic treatment device for performing hydrophobic treatment on a substrate, characterized in that: include: A processing container, which accommodates the substrate to form a processing space; a first supply port for supplying a first gas to the substrate from above the substrate in the processing container; and a second supply port for supplying a second gas to the substrate from a position below the substrate in the processing container and facing a central region of the substrate; A hydrophobic gas may be supplied as the first gas from the first supply port and the second gas from the second supply port.

2. The hydrophobic treatment device according to claim 1, characterized in that: The first supply port has a central supply port formed at a position opposite to the second supply port across the substrate in the processing container. With respect to the substrate having both the front surface and the back surface being subjected to the hydrophobic treatment, when the hydrophobic treatment is performed on the front surface, the hydrophobic gas is supplied as the first gas from the central supply port.

3. The hydrophobic treatment device according to claim 2, characterized in that: With respect to the substrate whose front surface and back surface are both subjected to the hydrophobic treatment, the hydrophobic gas is supplied to the front surface and back surface simultaneously.

4. The hydrophobic treatment device according to claim 2, characterized in that: With respect to the substrate whose front surface and back surface are both subjected to the hydrophobic treatment, the supply of the hydrophobic gas to the front surface and the supply of the hydrophobic gas to the back surface are sequentially performed.

5. The hydrophobic treatment device according to claim 1, characterized in that: The first supply port has a central supply port formed at a position opposite to the second supply port across the substrate in the processing container. When performing the hydrophobic treatment on the front surface of the substrate having only the front surface being treated with hydrophobicity, the hydrophobic gas as the first gas is supplied from the central supply port, and the inert gas as the second gas is supplied from the second supply port.

6. The hydrophobic treatment device according to any one of claims 1 to 5, characterized in that: It also has an upper peripheral exhaust port, which is arranged above and outside the substrate in the processing container and opens to the processing space. When the hydrophobic gas is supplied into the processing container, the processing container is exhausted from the upper peripheral exhaust port.

7. The hydrophobic treatment device according to claim 1, characterized in that: The processing container is configured to be able to exhaust the interior of the processing container from an exhaust position outside the substrate. The first supply port has: a central supply port formed at a position opposite to the second supply port across the substrate in the processing container; and an outer peripheral supply port formed at a position between the central supply port and the outer exhaust position, When only the outer peripheral portion of the front surface of the substrate in the processing container is subjected to the hydrophobic treatment, the inert gas is supplied as the first gas from the central supply port, and the hydrophobic gas is supplied as the first gas from the outer peripheral supply port.

8. A method for hydrophobizing a substrate, characterized in that: The method includes the steps of selectively supplying a hydrophobic gas from at least one of a first supply port and a second supply port, wherein the first supply port is arranged above the substrate in a processing container forming a processing space, and the second supply port is arranged below the substrate in the processing container and at a position opposite to the central area of ​​the substrate.

9. The hydrophobic treatment method according to claim 8, characterized in that: The first supply port has a central supply port formed at a position opposite to the second supply port across the substrate in the processing container. In the step of selectively supplying the hydrophobizing gas, with respect to the substrate whose front and back surfaces are both subjected to the hydrophobizing treatment, the hydrophobizing gas is supplied from the central supply port to the front surface.

10. The hydrophobic treatment method according to claim 9, characterized in that: In the step of selectively supplying the hydrophobizing gas, the hydrophobizing gas is supplied simultaneously to the front surface and the back surface of the substrate, both of which are the target of the hydrophobizing treatment.

11. The hydrophobic treatment method according to claim 9, characterized in that: In the step of selectively supplying the hydrophobic gas, for the substrate whose front and back surfaces are both subjected to hydrophobic treatment, the hydrophobic gas is supplied to the front surface and the hydrophobic gas is supplied to the back surface in sequence.

12. The hydrophobic treatment method according to claim 8, characterized in that: The first supply port has a central supply port formed at a position opposite to the second supply port across the substrate in the processing container. In the step of selectively supplying the hydrophobic gas, the hydrophobic gas is supplied from the central supply port and the inert gas is supplied from the second supply port to the substrate having only the front surface thereof as the target of the hydrophobic treatment.

13. The hydrophobic treatment method according to any one of claims 8 to 12, characterized in that: In the step of selectively supplying the hydrophobic gas, the processing container is exhausted from an upper peripheral exhaust port. The upper peripheral exhaust port is disposed above and outside the substrate in the processing container and opens to the processing space.

14. The hydrophobic treatment method according to claim 8, characterized in that: The processing container is configured to be able to exhaust the interior of the processing container from an exhaust position that is a position outside the substrate. The first supply port has: a central supply port formed at a position opposite to the second supply port across the substrate in the processing container; and an outer peripheral supply port formed at a position between the central supply port and the outer exhaust position, In the step of selectively supplying the hydrophobizing gas, with respect to the substrate having only the outer peripheral portion of the front surface of the substrate to be hydrophobized, the inert gas is supplied from the central supply port and the hydrophobizing gas is supplied from the outer peripheral supply port.

15. A computer-readable storage medium, characterized in that: The computer storage medium stores a program running on a computer as a control unit, and the control unit controls the hydrophobic treatment device so that the hydrophobic treatment method for performing hydrophobic treatment on a substrate is performed by using the hydrophobic treatment device. The hydrophobic treatment method includes: a step of selectively supplying a hydrophobic gas from at least any one of a first supply port and a second supply port, wherein the first supply port is arranged above the substrate in a processing container forming a processing space, and the second supply port is arranged below the substrate in the processing container at a position opposite to the central area of ​​the substrate.

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