A purification device and control method for semiconductors

Abstract

The present invention relates to a purification device for semiconductors. The purification device is used to remove impurities on the surface of a wafer and includes a cleaning mechanism. The cleaning mechanism includes a material seat, a diversion seat, a diversion member, and a cleaning component. Among them, the material seat rotates controllably. The material seat includes a placement plane for placing the wafer, and the diversion seat rotates controllably. In this purification device, due to the coaxial arrangement of the material seat and the diversion seat and the technical means that the radius of the edge contour of the diversion surface is smaller than the radius of the wafer, it effectively prevents the cleaning liquid from entering the gap between the wafer and the diversion seat. Furthermore, precise control of the flow path of the cleaning liquid is achieved. At the same time, through the first annular groove and the second annular groove arranged in a concentric structure, inert gas and pure water are sprayed on the back side of the wafer, thereby forming a double block on the back side of the wafer, effectively solving the problem of cleaning liquid residue caused by uneven flow rate or sputtering, and further achieving the effect of preventing the cleaning liquid from seeping into the gap.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor cleaning, and particularly to a purification device for semiconductors. Background Art

[0002] In the process of semiconductor manufacturing, the cleaning of the wafer surface is a key step to ensure high-quality chip production. With the continuous development of semiconductor technology, the integration and precision of chips have been continuously improved, and the requirements for the cleanliness of the wafer surface have become increasingly strict. Removing impurities, particles, and residues on the wafer surface has become an essential link in the manufacturing process. When cleaning the wafer, liquid cleaning agents and gas drying media are usually applied alternately or in combination to achieve efficient cleaning and drying effects on the wafer surface.

[0003] Existing wafer purification devices generally include a material seat for supporting and rotating the wafer, as well as corresponding liquid and gas injection devices. The cleaning liquid is sprayed onto the rotating wafer surface through a nozzle or a spraying system, and cooperates with the megasonic system to remove attached impurities and particles, and uses centrifugal force to throw the liquid mixed with impurities and particles from the wafer surface to the edge. At the same time, existing cleaning equipment is also provided with a diversion seat and a drainage member for guiding and collecting the used cleaning liquid to improve the cleaning efficiency and the reuse efficiency of the cleaning liquid. The diversion seat is generally fixedly or rotatably arranged above the material seat and cooperates with the material seat to jointly achieve the cleaning of the wafer surface and the collection of the liquid.

[0004] However, in the existing technology during the cleaning process, when the spraying mode and flow rate of the cleaning liquid are uneven, cleaning liquid sputtering may occur, resulting in the cleaning liquid entering the gap between the cleaning ring and the wafer surface. This will cause the cleaning liquid to remain on the edge or back of the wafer, affecting the cleaning effect, reducing the efficiency of high-precision cleaning, and making it difficult to fully meet the strict requirements for wafer cleanliness in semiconductor manufacturing. Therefore, it is urgent to propose a purification device for semiconductors to solve the above problems. Summary of the Invention

[0005] The purpose of the present invention is to provide a purification device for semiconductors that can prevent the cleaning liquid from entering the gap between the wafer and the cleaning ring and avoid the residue of the cleaning liquid.

[0006] The technical solution adopted by the present invention to solve the above problems is: a purification device for semiconductors, the purification device is used to remove impurities on the wafer surface, including:

[0007] A material seat, the material seat is controlled to rotate, and the material seat includes a placement plane for placing the wafer.

[0008] Flow guiding seat, the flow guiding seat rotates controllably, and the rotation axis of the flow guiding seat is coaxially arranged with the rotation axis of the material seat. The flow guiding seat includes a flow guiding surface, the rotation axis of the flow guiding seat is perpendicular to the flow guiding surface, and the edge contour of the flow guiding surface is circular. The radius corresponding to the edge contour of the flow guiding surface is smaller than the radius of the wafer placed coaxially on the placement plane. A first annular groove and a second annular groove are formed on the side of the flow guiding surface of the flow guiding seat. The first annular groove and the second annular groove are concentrically arranged, and the radius of the first annular groove is smaller than the radius of the second annular groove. A first flow channel and a second flow channel are formed in the material seat. One end of the first flow channel is communicated with the first annular groove, and the other end of the first flow channel is communicated with a gas source. One end of the second flow channel is communicated with the second annular groove, and the other end of the second flow channel is communicated with a liquid source. Wherein, the opening direction of the first annular groove forms a first preset angle with the rotation axis of the material seat, the opening direction of the second annular groove forms a second preset angle with the rotation axis of the material seat, and there is a first gap between the flow guiding surface and the placement plane, so that the placement plane of the material seat protrudes from the flow guiding surface of the flow guiding seat.

[0009] Drainage member, the drainage member rotates controllably, and the rotation axis of the drainage member is coaxially arranged with the rotation axis of the flow guiding seat. The drainage member includes a drainage surface, the drainage surface is perpendicular to the rotation axis of the drainage member, and there is a second gap between the drainage surface of the drainage member and the drainage surface of the flow guiding seat, so that the drainage surface of the flow guiding seat protrudes from the drainage surface of the drainage member.

[0010] Cleaning assembly, the cleaning assembly is arranged on the side of the material seat away from the drainage member. The cleaning assembly includes a nozzle, and the nozzle opening is arranged towards the placement plane.

[0011] Preferably, a first main flow channel is formed in the flow guiding seat. The number of the first main flow channels formed in the flow guiding seat is several. One ends of the several first main flow channels away from the first annular groove are all communicated with the inside of the first main flow channel, and the first main flow channel is communicated with a gas source through a pipeline.

[0012] A second main flow channel is formed in the flow guiding seat. The number of the second flow channels formed in the flow guiding seat is several. One ends of the second main flow channels away from the second annular groove are all communicated with the inside of the second main flow channel, and the second main flow channel is communicated with a liquid source through a pipeline.

[0013] Preferably, a first connecting groove connected to the first flow channel and a second connecting groove connected to the second flow channel are formed inside the guide seat, and a third annular groove connected to the first connecting groove and a fourth annular groove connected to the second connecting groove are formed on the outer peripheral side of the guide seat.

[0014] An annular embedding groove is provided at the drainage surface of the drainage member. The drainage member comprises an annular component. The annular component is detachably arranged in the annular embedding groove. The annular component is composed of a plurality of concentrically arranged annular members.

[0015] An extension ring, wherein a third flow channel and a fourth flow channel are provided inside the extension ring, and a fifth annular groove and a sixth annular groove are provided concentrically on the side of the extension ring away from the guide member, one end of the third flow channel is connected to the fifth annular groove, one end of the fourth flow channel is connected to the sixth annular groove, and the extension ring is configured so that when the annular member closest to the guide seat is replaced by the extension ring, the outer peripheral side wall of the extension ring is fitted with the inner peripheral side wall of the adjacent annular member, and the inner peripheral side wall of the extension ring is fitted with the outer peripheral side wall of the guide seat, so that the other end of the third flow channel in the extension ring is connected to the third annular groove, and the other end of the fourth flow channel in the extension ring is connected to the fourth annular groove.

[0016] Preferably, the opening direction of the fifth annular groove forms a third preset angle with the rotation axis of the material seat, and the opening direction of the sixth annular seat forms a fourth preset angle with the rotation axis of the material seat.

[0017] Preferably, a purification device for semiconductors further comprises:

[0018] A rotating shaft, the rotating shaft is controlled to rotate, the rotating shaft is connected to the material seat, the rotating shaft is connected to the guide seat, the rotating shaft is connected to the guide member, and the axis of the rotating shaft is coaxially arranged with the rotation axis of the material seat, the rotation axis of the guide seat and the rotation axis of the guide member.

[0019] A driving motor, wherein the output shaft of the driving motor is drivingly connected to the rotating shaft.

[0020] Preferably, a purification device for semiconductors further comprises:

[0021] The liquid collector comprises an annular liquid collecting trough, which is coaxially arranged outside the rotating shaft, and the notch of the liquid collecting trough is arranged lower than the drainage surface on the drainage member.

[0022] Preferably, a purification device for semiconductors further comprises:

[0023] A box body, the box body includes a first accommodation space, and the material seat, the diversion seat, the drainage member and the nozzle are all arranged in the first accommodation space.

[0024] A control cabinet, the control cabinet includes a second accommodation space, and the box body is arranged in the second accommodation space.

[0025] Specifically, a control method for a purification device for semiconductors as described above is characterized by including:

[0026] The control method for the injection of gas and liquid during the start-up stage of the drive motor includes:

[0027] Obtain the real-time speed of the drive motor and the speed change rate of the drive motor.

[0028] Obtain the initial ejection speed of the gas and the initial ejection speed of the liquid according to the real-time speed of the drive motor.

[0029] According to the real-time speed and the speed change rate of the drive motor during the acceleration process, and in combination with the interaction between the injected gas and the injected liquid, adjust the ejection speed of the gas and the ejection speed of the liquid, and form a stable injection flow after the drive motor reaches a stable speed.

[0030] Preferably, a control method for a purification device for semiconductors further includes:

[0031] The control method for the injection of gas and liquid during the stop stage of the drive motor includes:

[0032] Obtain the real-time speed of the drive motor and the speed change rate of the drive motor.

[0033] Obtain the gas injection speed and the liquid injection speed according to the real-time speed of the drive motor and the speed change rate of the drive motor.

[0034] Obtain the corrected gas injection speed and the corrected liquid injection speed according to the interaction between the injected gas and the injected liquid.

[0035] According to the real-time speed and the speed change rate of the drive motor, adjust the real-time injection speed of the gas and the real-time injection speed of the liquid to keep the blocking layer stable.

[0036] Preferably, the interaction between the injected gas and the injected liquid is obtained through the following formula:

[0037] C(t) = α·v g (t)·v l (t)·cos(θ g -θ l )。

[0038] Wherein:

[0039] α is the proportionality constant of the interaction, adjusted based on the nozzle structure and fluid physical properties.

[0040] θ g are the gas injection angles respectively.

[0041] θ l is the liquid injection angle.

[0042] v g is the gas injection velocity.

[0043] v l (t) is the liquid injection velocity.

[0044] Advantages of the embodiments in the present invention

[0045] For the purification device for semiconductors, due to the coaxial arrangement of the material seat and the diversion seat and the technical means that the radius of the edge contour of the diversion surface is smaller than the radius of the wafer, it effectively prevents the cleaning liquid from entering the gap between the wafer and the diversion seat, and thus realizes the precise control of the flow path of the cleaning liquid. At the same time, through the first annular groove and the second annular groove arranged in a concentric structure, the inert gas and pure water are sprayed on the back side of the wafer, thereby forming a double block on the back of the wafer, effectively solving the problem of cleaning liquid residue caused by uneven flow rate or sputtering, and thus realizing the effect of preventing the cleaning liquid from infiltrating into the gap. In addition, the diversion surface of the diversion member is coaxial with the diversion surface and the diversion surface protrudes slightly, so that the excess cleaning liquid can be quickly guided after the cleaning is completed, effectively solving the problem of cleaning liquid retention, and thus realizing the improvement of the cleaning liquid collection efficiency. These designs together achieve a significant improvement in high-efficiency cleaning, cleaning liquid control and cleaning liquid collection efficiency, meeting the strict requirements for the cleanliness of wafers in semiconductor manufacturing.

[0046] For the purification device for semiconductors, due to the combined design of the annular member and the extension ring, the annular assembly can adjust the radial dimension by increasing or decreasing the number of annular members according to the target wafer size, so as to be applicable to wafers of different sizes. Therefore, it effectively solves the problem that the purification device in the prior art can only be applied to a fixed size, and thus realizes the adaptability and versatility of the purification device to wafers of various sizes, significantly improving the flexibility and application range of the purification device. Brief Description of the Drawings

[0047] Figure 1 is a schematic structural diagram of a battery case applicable to the present invention.

[0048] Figure 2 is a schematic cross-sectional view of a battery case applicable to the present invention.

[0049] Figure 3It is a schematic structural diagram of an embodiment of the present invention.

[0050] Figure 4 It is a schematic structural diagram of the shunt component and the detection table in a connected state in an embodiment of the present invention.

[0051] Figure 5 It is a schematic cross-section when the battery housing is sleeved outside the core mold in an embodiment of the present invention Figure 1 。

[0052] Figure 6 It is a schematic cross-section when the battery housing is sleeved outside the core mold in an embodiment of the present invention Figure 2 。

[0053] Figure 7 It is a schematic exploded view of the shunt in an embodiment of the present invention.

[0054] Figure 8 It is a schematic structural diagram when the drive motor, the liquid collector and the box body are connected in an embodiment of the present invention.

[0055] Figure 9 It is a schematic structural diagram of a semiconductor cleaning device in an embodiment of the present invention.

[0056] Wherein: 100, cleaning mechanism; 110, placement plane; 120, material seat; 130, diversion seat; 131, main flow channel; 1311, main annular groove; 132, communication groove; 133, sealing ring; 140, connecting piece; 150, drainage piece; 160, annular assembly; 170, extension ring; 171, extension flow channel; 172, secondary annular groove; 200, liquid collector; 210, annular liquid collection groove; 300, drive motor; 400, cleaning component; 500, box body; 600, control cabinet; 700, rotating shaft; 800, shaft sleeve; 900, wafer 900. Detailed implementation manners

[0057] The following will further describe in detail the specific implementation manners of the present invention with reference to the drawings and embodiments. The following embodiments are used to illustrate the present invention, but are not used to limit the scope of the present invention.

[0058] In the description of the present application, it should be understood that the orientation or positional relationships indicated by the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientation or positional relationships shown in the drawings. These are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be construed as limiting the scope of protection of the present application. In addition, the terms "first", "second", etc. are only used for descriptive purposes and cannot be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first", "second", etc. may explicitly or implicitly include one or more of such features. In the description of the present invention, unless otherwise specified, the meaning of "a plurality" is two or more.

[0059] In the description of the present application, it should be noted that unless otherwise clearly specified and defined, the terms "mounted", "connected", and "coupled" should be understood in a broad sense. For example, it may be a fixed connection, a detachable connection, or an integral connection; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood through specific circumstances.

[0060] As shown in the figure, in a preferred embodiment of the present application, a purification device for semiconductors is provided. The purification device is used to remove impurities on the surface of the wafer 900, and includes a cleaning mechanism 100. The cleaning mechanism 100 includes a material seat 120, a diversion seat 130, a diversion member 150, and a cleaning assembly 400. Among them, the material seat 120 rotates controllably. The material seat 120 includes a placement plane 110 for placing the wafer 900. The diversion seat 130 rotates controllably, and the rotation axis of the diversion seat 130 is coaxially arranged with the rotation axis of the material seat 120. The diversion seat 130 includes a diversion surface. The rotation axis of the diversion seat 130 is perpendicular to the diversion surface, and the edge contour of the diversion surface is circular. The radius corresponding to the edge contour of the diversion surface is smaller than the radius of the wafer 900 coaxially placed on the placement plane 110. A main annular groove 1311 is formed on the side of the diversion surface of the diversion seat 130, which are respectively a first annular groove and a second annular groove. The first annular groove and the second annular groove are concentrically arranged, and the radius of the first annular groove is smaller than the radius of the second annular groove. A main flow channel 131 is formed in the material seat 120, which are respectively a first flow channel and a second flow channel. One end of the first flow channel is connected to the first annular groove, and the other end of the first flow channel is connected to a gas source. One end of the second flow channel is connected to the second annular groove, and the other end of the second flow channel is connected to a liquid source. Among them, the opening direction of the first annular groove forms a first preset angle with the rotation axis of the material seat 120, and the opening direction of the second annular groove forms a second preset angle with the rotation axis of the material seat 120. There is a first gap between the diversion surface and the placement plane 110, so that the placement plane 110 of the material seat 120 protrudes from the diversion surface of the diversion seat 130. The diversion member 150 rotates controllably, and the rotation axis of the diversion member 150 is coaxially arranged with the rotation axis of the diversion seat 130. The diversion member 150 includes a diversion surface. The diversion surface is perpendicular to the rotation axis of the diversion member 150. There is a second gap between the diversion surface of the diversion member 150 and the diversion surface of the diversion seat 130, so that the diversion surface of the diversion seat 130 protrudes from the diversion surface of the diversion member 150. The cleaning assembly 400 is arranged on the side of the material seat 120 away from the diversion member 150. The cleaning assembly 400 includes a nozzle, and the nozzle opening is oriented towards the placement plane 110.

[0061] In this embodiment, the material seat 120 is a disk structure capable of being controlled to rotate, and includes a placement plane 110 for placing the wafer 900. The placement plane 110 is designed as a smooth and firm surface to fix and support the wafer 900. The material seat 120 supports the wafer 900 during the cleaning process, providing a stable rotating platform, so that the cleaning liquid and gas can uniformly cover the surface of the wafer 900. The material seat 120 is designed to be controllably rotatable and has a plane for placing the wafer 900. Its coaxial rotation design functions to provide centrifugal force during the cleaning process, throwing impurities and the cleaning liquid away from the surface of the wafer 900, thereby improving the cleaning efficiency. At the same time, its rotation provides stable support, enabling the cleaning liquid and gas to act uniformly on the surface of the wafer 900. The material seat 120 is designed to be controllably rotatable to ensure the stability of the wafer 900 during the cleaning process, and cooperate with the centrifugal force to achieve efficient removal of impurities.

[0062] The flow guide seat 130 is coaxially arranged with the material seat 120, so that it can rotate synchronously with the material seat 120, and the rotation axis is perpendicular to the flow guide surface thereon. The edge contour of the flow guide surface is circular, and the radius is smaller than the radius of the wafer 900 placed on the material seat 120, so that the edge of the wafer 900 is in a suspended state, ensuring that there is a controllable flow space between the flow guide surface and the edge of the wafer 900. Concentric first and second annular grooves are provided on the side of the flow guide surface. The radius of the first annular groove is smaller than that of the second annular groove, that is, the first annular groove is located inside the second annular groove. The first annular groove and the second annular groove are respectively connected to the gas source and the liquid source. By precisely controlling the flow directions of the gas and the cleaning liquid, a double blocking layer is formed on the back surface of the wafer 900 to prevent the cleaning liquid from penetrating into the gap. The gas from the gas source can be an inert gas, and the liquid from the liquid source can be pure water. Moreover, the gas source can be an air pump, and the liquid source can be a water pump. The flow guide seat 130 can be made of a high-strength alloy material to ensure stable structure without deformation during high-speed rotation. The design of the flow guide seat 130 effectively prevents the cleaning liquid from penetrating into the gap between the wafer 900 and the cleaning ring, ensuring precise control of the flow path of the cleaning liquid. The flow guide seat 130 plays a role in guiding the cleaning liquid and gas to form a stable blocking layer on the back surface of the wafer 900, improving the cleaning effect while avoiding liquid penetration.

[0063] The drain member 150 is coaxially arranged with the diversion seat 130 and the material seat 120. There is a certain gap between its drain surface and the diversion surface, and the drain surface is slightly lower than the diversion surface. The structure of the drain member 150 enables the excess cleaning liquid to be smoothly discharged after the cleaning is completed. The drain member 150 controls the flow direction of the cleaning liquid through the second gap between it and the diversion surface, and can quickly guide the excess cleaning liquid to the designated liquid collector 200 or collection device after the cleaning is completed, preventing the cleaning liquid from remaining between the wafer 900 and the diversion structure. In practical applications, the drain member 150 can be made of corrosion-resistant metal or hard engineering plastics to adapt to the long-term erosion of the cleaning liquid and gas. The structure of the drain member 150 ensures the rapid discharge of the cleaning liquid after cleaning, maintains the cleanliness of the cleaning system, prevents the cleaning liquid from remaining in the system, and thereby improves the efficiency and effect of the entire cleaning process.

[0064] In some embodiments, the material seat 120, the diversion seat 130 and the drain member 150 are connected to one end of the rotating shaft 700 through a connecting member 140.

[0065] The nozzle of the cleaning assembly 400 is designed to face the wafer 900 to ensure that the cleaning liquid can evenly cover the surface of the wafer 900 and remove surface impurities. By controlling the spraying pressure and flow rate of the nozzle, cleaning modes such as high-pressure spraying or fine atomization can be selected according to different cleaning requirements. The cleaning assembly 400 can directly spray the cleaning liquid onto the surface of the wafer 900, and cooperate with the rotational centrifugal force of the material seat 120 to ensure that impurities and the cleaning liquid quickly leave the surface of the wafer 900, achieving the effects of efficient cleaning and rapid drying.

[0066] In this embodiment, due to the coaxial arrangement of the material seat 120 and the diversion seat 130 and the technical means that the radius of the edge contour of the diversion surface is smaller than the radius of the wafer 900, it effectively prevents the cleaning liquid from entering the gap between the wafer 900 and the diversion seat 130, and thus realizes the precise control of the flow path of the cleaning liquid. At the same time, through the first annular groove and the second annular groove arranged in a concentric structure, inert gas and pure water are sprayed on the back side of the wafer 900, thereby forming a double block on the back side of the wafer 900, effectively solving the problem of cleaning liquid residue caused by uneven flow rate or sputtering, and thus realizing the effect of preventing the cleaning liquid from seeping into the gap. In addition, the drain surface of the drain member 150 is coaxially arranged with the diversion surface and the diversion surface protrudes slightly, so that the excess cleaning liquid can be quickly guided after the cleaning is completed, effectively solving the problem of cleaning liquid retention, and thus realizing the improvement of the cleaning liquid collection efficiency. These designs together achieve a significant improvement in efficient cleaning, cleaning liquid control and cleaning liquid collection efficiency, meeting the strict requirements for the cleanliness of the wafer 900 in semiconductor manufacturing.

[0067] In some embodiments, a plurality of main channels 131 are formed in the flow guiding seat 130. The main channels 131 are divided into a first channel and a second channel. One end of each first channel away from the first annular groove is communicated with a gas source through a pipeline. One end of each second channel away from the second annular groove is communicated with a liquid source.

[0068] In this embodiment, the purification device for semiconductors adds the structure of the main channel 131, further optimizing the transmission path and distribution effect of gas and liquid. A plurality of main channels 131 are arranged inside the flow guiding seat 130 for respectively introducing gas and liquid into the first annular groove and the second annular groove. The main channel 131 is divided into a first channel and a second channel. One end of the first channel is communicated with the first annular groove, and the other end is connected to the gas source through a pipeline. One end of the second channel is communicated with the second annular groove, and the other end is connected to the liquid source through a pipeline. The split design of the main channel 131 effectively realizes the independent transportation of gas and liquid, avoiding mutual interference between gas and liquid in the flow guiding seat 130. The first channel ensures that the gas flows to the first annular groove, while the second channel ensures that the liquid flows to the second annular groove, so that gas and liquid respectively form independent blocking layers, enhancing the cleaning effect. The main channel 131 can be designed as a pipeline with a smooth inner wall to reduce the resistance of liquid and gas flow and improve the transmission efficiency. High-hardness metal or anti-corrosion materials can be used as the pipeline material of the main channel 131. This independent design of the main channel 131 realizes the efficient transmission of gas and liquid in the flow guiding seat 130, ensures the stability of the formation of the blocking layer, improves the flow control ability of the purification device for the cleaning liquid and gas, and thus improves the overall stability and accuracy of the cleaning process.

[0069] One end of the first channel is connected to the first annular groove, and the other end is connected to the gas source through a pipeline. The first channel is designed as an independent pipeline dedicated to transmitting gas. The independent setting of the first channel can prevent cross-influence during the flow of gas and liquid, ensuring that the gas can be evenly transported to the first annular groove, thus forming a stable gas blocking layer. The first channel makes the gas transmission path more stable, avoiding the occurrence of gas-liquid mixed flow phenomenon, thus effectively improving the stability of the gas blocking layer and enhancing the blocking effect on the cleaning liquid during the cleaning process.

[0070] One end of the second channel is connected to the second annular groove, and the other end is connected to the liquid source through a pipeline, dedicated to transmitting liquid. The second channel is designed as an independent channel system to ensure the independence of the cleaning liquid transmission. The second channel ensures that the cleaning liquid can be stably and continuously transported to the second annular groove, forming a uniform liquid blocking layer. Through the independent liquid channel, the interference between gas and liquid during the flow is avoided, which helps the cleaning liquid to be more evenly distributed on the back surface. The structure of the second channel enhances the stability of the liquid transmission, ensures the uniform distribution of the liquid blocking layer on the back surface of the wafer 900, further improves the cleaning effect, and reduces the risk of the cleaning liquid seeping in.

[0071] In summary, the first flow channel and the second flow channel provided in the flow guiding seat 130 are respectively connected to the gas source and the liquid source, ensuring the independent transmission of gas and liquid, forming a double blocking layer, and further optimizing the stability of gas-liquid blocking. This double flow channel design ensures the stability and independence of the gas and liquid blocking layers, further improving the cleaning efficiency and cleaning effect of the purification device, and meeting the cleaning requirements in high-precision semiconductor manufacturing.

[0072] In some embodiments, a communication groove 132 communicating with the main flow channel 131 is formed inside the flow guiding seat 130. The communication groove 132 includes a first communication groove and a second communication groove. The first communication groove communicates with the first flow channel, and the second communication groove communicates with the second flow channel. A third annular groove communicating with the first communication groove and a fourth annular groove communicating with the second communication groove are formed on the outer peripheral side of the flow guiding seat 130. When the third annular groove and the fourth annular groove need to be sealed, the sealing ring 133 can be installed in the third annular groove and the fourth annular groove to achieve the sealing of the third annular groove and the fourth annular groove. An annular embedding groove is formed at the drainage surface of the drainage member 150. The drainage member 150 includes an annular assembly 160. The annular assembly 160 is detachably arranged in the annular embedding groove. The annular assembly 160 is composed of a plurality of concentric annular members. An extension flow channel 171 is formed inside the extension ring 170. The extension flow channel 171 includes a third flow channel and a fourth flow channel. A secondary annular groove 172 is formed on the side of the extension ring 170 facing away from the drainage member 150. The secondary annular groove 172 includes a fifth annular groove and a sixth annular groove arranged concentrically. One end of the third flow channel communicates with the fifth annular groove, and one end of the fourth flow channel communicates with the sixth annular groove. Moreover, the extension ring 170 is configured such that when the annular member closest to the flow guiding seat 130 is replaced with the extension ring 170, the outer peripheral side wall of the extension ring 170 fits with the inner peripheral side wall of the adjacent annular member, and the inner peripheral side wall of the extension ring 170 fits with the outer peripheral side wall of the flow guiding seat 130, so that the other end of the third flow channel in the extension ring 170 communicates with the third annular groove, and the other end of the fourth flow channel in the extension ring 170 communicates with the fourth annular groove.

[0073] In this embodiment, the purification device for semiconductors is added with designs such as the communication groove 132, the annular groove, the sealing ring 133, and the extension ring 170 to further optimize the distribution and control of gas and liquid.

[0074] The communication groove 132 is arranged inside the diversion seat 130 and communicates with the main flow channel 131. The communication groove 132 includes a first communication groove and a second communication groove, which are respectively used for the transmission of gas and liquid. The first communication groove is connected to the first flow channel to ensure the transmission of gas; the second communication groove is connected to the second flow channel to ensure the transmission of liquid. The design of the communication groove 132 enables gas and liquid to be smoothly distributed from the main flow channel 131 to the inside of the diversion seat 130, ensuring independent paths for the cleaning liquid and gas to flow to the first annular groove and the second annular groove, and avoiding gas-liquid cross interference. The communication groove 132 provides a stable gas-liquid transmission channel, ensures the efficient distribution of the cleaning liquid and gas, improves the formation effect of the double blocking layer, and ensures the stability and accuracy of the cleaning process.

[0075] The outer peripheral side of the diversion seat 130 is provided with a third annular groove and a fourth annular groove, which are respectively connected to the first communication groove and the second communication groove. The third annular groove is used for the transmission of gas, and the fourth annular groove is used for the transmission of liquid. The design of the annular groove ensures the uniform distribution of gas and liquid in the edge area of the diversion seat 130. The gas in the third annular groove and the liquid in the fourth annular groove respectively form a layered block on the outside and inside, so as to achieve the uniformity of gas-liquid distribution. The structural design of the annular groove provides good layered gas-liquid transmission, effectively forms a double-layer blocking protection, prevents the cleaning liquid from penetrating, and improves the stability and cleaning effect of the cleaning system.

[0076] The sealing ring 133 can be installed in the third annular groove and the fourth annular groove to seal the annular groove and ensure that gas and liquid do not leak during transmission. The function of the sealing ring 133 is to enhance the sealing effect of the annular groove, prevent gas or liquid from leaking from the annular groove, and ensure the stability of gas-liquid distribution. The common materials of the sealing ring 133 include corrosion-resistant materials such as silica gel and fluororubber, which are suitable for long-term exposure to gas-liquid pressure environments. The design of the sealing ring 133 ensures the sealing effect of gas and liquid in the annular groove, prevents leakage, and further improves the cleaning efficiency and transmission stability of the cleaning mechanism 100.

[0077] An annular groove is formed at the drainage surface of the drainage member 150 for installing the annular component 160. The annular component 160 is composed of a plurality of concentric annular members and can be detachably inserted into the annular groove to form a modular structure, facilitating adjustment for wafers 900 of different sizes. Through the multi-layer concentric structure of the annular component 160, when the purification device needs to be adjusted to adapt to wafers 900 of different sizes, only several annular members close to the diversion seat 130 in the annular groove need to be removed, and then the extension ring 170 with a suitable size is placed in the vacancy of the annular groove, so as to effectively extend the coverage range of the diversion seat 130 and provide precise double blocking for wafers 900 of different sizes. In practical applications, the annular members in the annular component 160 are usually made of high-strength wear-resistant materials, such as hard plastics or corrosion-resistant alloys, so as to withstand the erosion of gas and cleaning liquid for a long time during the cleaning process. The detachable design makes the equipment maintenance and adjustment more convenient and rapid. The modular design of the annular component 160 and the extension ring 170 enables the purification device to flexibly adapt to wafers 900 of different sizes, ensuring the uniform distribution of the gas-liquid blocking layer on the back of wafers 900 of various sizes. This flexibility effectively improves the adaptability of the purification device and can maintain stable cleaning effects and double-sealing blocking effects during the cleaning of wafers 900 of different sizes.

[0078] The extension ring 170 can be installed in the annular component 160 and is internally provided with an extension flow channel 171, and the extension flow channel 171 includes a third flow channel and a fourth flow channel. The design of the extension ring 170 enables it to cooperate with other annular members in the annular groove, and concentric fifth annular groove and sixth annular groove are formed on the side of the extension ring 170 facing away from the drainage member 150, which are respectively communicated with the third flow channel and the fourth flow channel of the extension flow channel 171. The extension ring 170 provides a suitable double blocking layer for wafers 900 of different sizes by fitting with other annular members of the annular component 160. At the same time, the inner and outer peripheral side walls of the extension ring 170 are respectively attached to the diversion seat 130 and the adjacent annular member, ensuring the sealed transmission of gas and liquid and filling the possible gaps to prevent the cleaning liquid from seeping in. The setting of the extension ring 170 enhances the adaptability of the cleaning system. By simply replacing the extension ring 170, it can be adapted to wafers 900 of different sizes, ensuring the continuity of gas-liquid flow and the sealing effect. This design improves the versatility and efficiency of the cleaning mechanism 100, enabling it to still maintain high-efficiency cleaning and double-sealing effects when facing wafers 900 of different sizes.

[0079] Among them, it should be noted that the mating design of the annular component 160 and the extension ring 170. In the purification device for semiconductors, in order to accommodate wafers 900 of different sizes, the mating design of the annular component 160 and the extension ring 170 provides the advantages of modularity and flexibility. Since the sizes of the wafers 900 are usually concentrated in several standard specifications, the purification device only needs to set corresponding annular parts and extension rings 170 for these common specifications to achieve efficient adaptation to wafers 900 of different sizes. The annular component 160 is composed of multiple concentric annular parts. Several annular parts close to the flow guide seat 130 can be removed according to the actual size of the wafer 900, and then the extension ring 170 with a suitable size is placed in the vacant position of the annular groove. The extension ring 170 is precisely designed, and its outer diameter matches the inner diameter of the annular part corresponding to the size of the target wafer 900, and it can accurately replace the original annular part. This modular design enables the purification device to quickly switch the support and sealing structures for wafers 900 of different sizes by simply replacing the combination of the annular part and the extension ring 170, and provides a suitable double-sealing blocking layer for the back of the wafer 900.

[0080] In this embodiment, due to the adoption of the mating design of the annular part and the extension ring 170, the annular component 160 can adjust its radial dimension by increasing or decreasing the number of annular parts according to the size of the target wafer 900, so as to be applicable to wafers 900 of different sizes. Therefore, it effectively solves the problem in the prior art that the purification device can only be applied to a fixed size, and further realizes the adaptability and versatility of the purification device to wafers 900 of various sizes, significantly improving the flexibility and application range of the purification device.

[0081] The purification device for semiconductors further optimizes the structures of the fifth annular groove and the sixth annular groove of the extension ring 170, and enhances the spraying effects of gas and liquid by setting a third preset angle and a fourth preset angle to ensure the formation of a stable protection on the back of the wafer 900 for the blocking layer.

[0082] In some embodiments, the opening direction of the fifth annular groove forms a third preset angle with the rotation axis of the material seat 120, and the opening direction of the sixth annular seat forms a fourth preset angle with the rotation axis of the material seat 120.

[0083] The fifth annular groove and the sixth annular groove are respectively formed on the outer peripheral surface of the extension ring 170 for transmitting gas and liquid. The fifth annular groove is connected to the third flow channel for transmitting gas, and the sixth annular groove is connected to the fourth flow channel for transmitting liquid. The opening direction of the fifth annular groove forms a third preset angle with the rotation axis of the material seat 120, while the opening direction of the sixth annular groove forms a fourth preset angle with the rotation axis of the material seat 120. The setting of these angles optimizes the spraying directions of the gas and liquid on the back surface of the wafer 900. By designing the third preset angle and the fourth preset angle, the gas and liquid can be sprayed onto the back surface of the wafer 900 at the optimal angles, ensuring the formation of a stable gas-liquid blocking layer. This angle design enhances the coverage range and thickness of the blocking layer by controlling the spraying direction, effectively preventing the cleaning liquid from seeping into the gaps at the edge of the wafer 900. Different preset angles can optimize the flow paths of the gas and liquid, avoiding interference between the gas and liquid on the back surface and further improving the double blocking effect.

[0084] In some embodiments, the purification device for semiconductors further includes structures such as a rotating shaft 700, a driving motor 300, a liquid collector 200, a box body 500, and a control cabinet 600. The design of these components and structures further improves the operation convenience and cleaning efficiency of the device.

[0085] The rotating shaft 700 is the core transmission component for connecting and driving the material seat 120, the flow guiding seat 130, and the drainage member 150. Its axis is coaxially arranged with the rotation axes of the material seat 120, the flow guiding seat 130, and the drainage member 150 to achieve synchronous rotation of each part. The rotating shaft 700 realizes synchronous driving of the material seat 120, the flow guiding seat 130, and the drainage member 150 through coaxial design, ensuring that each component maintains the same rotation speed and direction during the cleaning process. This design helps to evenly distribute the cleaning liquid and gas, avoiding the instability problem of the blocking layer caused by different rotation speeds. In practice, the rotating shaft 700 can be made of high-strength steel or corrosion-resistant alloy to adapt to the mechanical stress caused by rotation and the corrosive environment of the cleaning liquid. Moreover, through coaxial arrangement, the rotating shaft 700 realizes synchronous rotation of multiple components in the cleaning mechanism 100, making the blocking layer more uniform and stable, and effectively improving the cleaning efficiency and overall cleanliness.

[0086] The driving motor 300 is connected to the rotating shaft 700. The output shaft of the driving motor 300 is connected to the rotating shaft 700 through a transmission mechanism to provide rotational power for the material seat 120, the flow guiding seat 130, and the drainage member 150. Among them, the transmission mechanism can be selected as a coupling. The driving motor 300 enables the rotating shaft 700 and each rotating component to achieve synchronous and efficient operation through stable power output, improving the stability of the cleaning process, ensuring the uniform distribution of the cleaning liquid, and further improving the cleaning effect.

[0087] The liquid collector 200 includes an annular liquid collecting groove 210, which is arranged coaxially outside the rotating shaft 700, and the notch position is lower than the liquid guiding surface of the liquid guiding member 150. The annular design of the liquid collector 200 can effectively collect the cleaning liquid discharged by the liquid guiding member 150. Since the notch is lower than the liquid guiding surface, the cleaning liquid can enter the annular liquid collecting groove 210 under the combined action of centrifugal force and gravity after the cleaning process ends, preventing the cleaning liquid from remaining inside the device. The coaxial design of the liquid collector 200 ensures that the cleaning liquid can flow smoothly into the annular liquid collecting groove 210, reducing the residue of the cleaning liquid, ensuring the cleanliness and stability inside the cleaning mechanism 100, and extending the service life of the device. The rotating shaft 700 is connected to the liquid collector 200 through a bushing 800, and a bearing is installed inside the bushing 800. The rotating shaft 700 is connected to the bushing 800 through the bearing.

[0088] The box body 500 includes a first accommodating space, and the material seat 120, the diversion seat 130, the liquid guiding member 150 and the nozzle are all arranged in this accommodating space to isolate the splashing liquid and gas during the cleaning process. The liquid collector 200 is fixedly installed in the box body 500. The design of the box body 500 provides a closed cleaning environment, effectively preventing the cleaning liquid and gas from splashing to the outside. At the same time, the accommodating space inside the box body 500 makes the layout of the components of the purification device more compact, facilitating management and maintenance. The closed design of the box body 500 avoids the leakage of the cleaning liquid and gas, provides a safe and clean cleaning space, effectively controls the environmental pollution during the cleaning process, and meets the cleanliness requirements of semiconductor production. The control cabinet 600 includes a second accommodating space, and the box body 500 is arranged in the second accommodating space. The control cabinet 600 is usually equipped with a control system for controlling various parameters (such as rotation speed, cleaning liquid flow rate, gas pressure, etc.) during the cleaning process. The design of the control cabinet 600 can centrally manage the operating state of the cleaning system. The layout of the control cabinet 600 not only protects the control system from the influence of the cleaning liquid, but also enables the operator to conveniently adjust and monitor various parameters during the cleaning process. The setting of the control cabinet 600 not only ensures the operation safety of the purification device, but also realizes the precise control of the cleaning process, ensuring that the cleaning process is efficient and stable, and meets the high requirements of semiconductor manufacturing for cleanliness and automation.

[0089] During the start-up and stop processes of the drive motor 300, since the rotation speed of the wafer 900 changes during the acceleration or deceleration stage, it is indeed possible to cause uneven centrifugal force on the surface of the wafer 900. Such a change in rotation speed will make the spraying effects of the cleaning liquid and the inert gas less stable than at a constant rotation speed, thereby increasing the probability of the cleaning liquid splashing obliquely and entering the gap between the wafer 900 and the diversion seat 130 or the liquid guiding member 150. Therefore, in order to reduce the probability of liquid entering the gap during the start-up and stop stages of the drive motor 300, the present application proposes a control method for controlling the above purification device, specifically including:

[0090] Method for controlling injection of gas and liquid during startup phase of drive motor 300:

[0091] Obtain the real-time rotational speed of drive motor 300 and the rate of change of the rotational speed of drive motor 300.

[0092] Obtain the initial ejection speed of gas and the initial ejection speed of liquid based on the real-time rotational speed of drive motor 300.

[0093] Based on the real-time rotational speed and the rate of change of rotational speed of drive motor 300 during the acceleration process, and in combination with the interaction between the two injection fluids of gas and liquid, adjust the ejection speed of gas and the ejection speed of liquid, and form a stable injection flow after the drive motor 300 reaches a stable rotational speed.

[0094] Furthermore, monitor the injection effect through a feedback system to ensure that the injection angles and speeds of gas and liquid always remain within the set range, and if there are any deviations, make timely adjustments.

[0095] Among them, obtaining the real-time rotational speed of drive motor 300 and the rate of change of the rotational speed of drive motor 300 specifically includes:

[0096] Start drive motor 300 and monitor the real-time rotational speed ω(t) and acceleration of its output shaft

[0097] Among them, the gas injection formula and the liquid injection control formula during the startup phase of drive motor 300 are as follows:

[0098]

[0099] v g (t) is the gas injection speed, representing the speed of the gas ejected from the first circular groove, describing the intensity and flow velocity of gas injection. The unit is m / s. It determines the contribution of the gas to the formation of the blocking layer. A higher injection speed will improve the guiding and disturbing effects of the gas on the liquid flow direction.

[0100] v l (t) is the liquid injection speed, representing the speed of the liquid ejected from the second circular groove, describing the intensity and flow rate of liquid injection. The unit is m / s. It affects the movement path and coverage effect of the liquid under the guidance of the gas. The combination with the gas speed determines the stability of the liquid distribution on the back surface of the wafer 900.

[0101] v g0 and v l0 are respectively the initial speed of gas and the base speed of liquid injection during the startup phase. They serve as the benchmarks for the injection speed to ensure a stable base value during adjustment.

[0102] k g1 and k l1are the rotational speed response gain coefficients, which define how the injection speed varies with the rotational speed of the drive motor 300. They determine the response amplitude of the gas and liquid injection speeds to the real-time rotational speed of the motor. Higher coefficients make the injection speed more sensitive to the rotational speed.

[0103] ω(t) is the real-time rotational speed, which is the rotational speed of the motor at any given moment, measured in rad / s or rpm. It can be used to reflect the motor state in real time and is a key variable for controlling the injection speed.

[0104] ω max is the maximum stable rotational speed, which is the maximum stable operating rotational speed that the motor can reach. It serves as a reference value for normalizing the current rotational speed to facilitate control adjustments.

[0105] k g2 and k l2 are the acceleration response gain coefficients, which respectively define how the gas and liquid injection speeds are adjusted according to the acceleration or deceleration of the motor. They are used to adjust the injection speed during the start-up or stop of the motor to compensate for the inertial effects of the fluid during rapid changes in rotational speed.

[0106] is the rate of change of rotational speed, which is the instantaneous rate of change of the motor's rotational speed, reflecting the acceleration or deceleration, measured in rad / s 2 , and can be used to adjust the injection speed in real time to cope with the dynamic changes during the start-up or stop of the motor.

[0107] The two formulas are designed to achieve precise control of the gas and liquid injection speeds during the start-up and stop phases to cope with the dynamic changes caused by the interaction between the rotational speed of the drive motor 300 and the fluid.

[0108] Explanation of the formula for the start-up phase:

[0109] The base injection speed terms (v g0 and v l0 ), these two base terms provide the initial injection speed during the start-up phase, ensuring that the gas and liquid have sufficient speed for injection at the instant the motor starts. At start-up, a fixed initial injection speed is required to initiate the fluid flow and form an initial blocking layer. Regardless of the rotational speed, the base speed ensures a stable starting point for the system.

[0110] The rotational speed gain terms ( and ) As the motor starts, the rotational speed gradually increases, which triggers changes in fluid behavior, such as an increase in centrifugal force. This gain term is used to dynamically adjust the injection speed as the motor speed rises. In practical applications, as the motor speed increases, the injection system needs to correspondingly increase the injection speed to ensure that the gas and liquid can adapt to the enhanced centrifugal force. This term adjusts the injection speed through normalization (using the ratio of the current speed to the maximum speed) to maintain synchronization with the motor operating state.

[0111] Acceleration adjustment term ( and ), During the start-up phase, there is usually a significant acceleration (rapid increase in rotational speed), which has an inertial effect on the fluid. This term adjusts the injection speed according to the acceleration to compensate for the fluid disturbance caused by acceleration. When the motor accelerates rapidly, the inertia of the fluid may cause changes in the injection path and stability, resulting in injection deviation or uneven flow. This acceleration term helps balance this change and provides a method to dynamically adjust the injection speed according to the real-time acceleration to ensure stable fluid injection.

[0112] Coupling term (C(t)), During the injection process, there are complex interactions between the fluid flows of the gas and liquid in the contact area, such as fluid guidance, interference, or mutual fusion. This term is used to supplement the influence of these interactions on the injection speed. The injection system not only needs to consider the independent gas and liquid flows but also their interaction behavior in the contact area. Introducing the coupling term C(t) helps reflect the dynamic influence between the gas and liquid in the formula, enabling the injection speed to be adjusted more precisely according to these interactions. This term improves the uniformity and stability of the blocking layer, especially preventing injection instability or fluid path interference during the acceleration phase.

[0113] In summary, the formula adjusts the injection speed by responding in real time to changes in the motor speed and acceleration, enabling the injection system to maintain a stable fluid flow throughout the motor start-up process. Each gain and adjustment term takes into account the actual physical phenomena present in the injection system, such as centrifugal force, inertia, and fluid interactions. This enables the formula to more realistically simulate and regulate the injection fluid behavior.

[0114] Therefore, by combining the base speed, speed gain, acceleration adjustment, and coupling term, the formula ensures that the injection speeds of the gas and liquid can be dynamically adjusted during the start-up phase, preventing fluid turbulence or uneven injection, and thus maintaining the stability and uniformity of the blocking layer.

[0115] Among them, the method for obtaining the initial injection speeds (v g0 and v l0 ) is as follows:

[0116] Set the drive motor 300 to conduct an experiment in a stationary state (i.e., the rotational speed is zero).

[0117] Configure the gas and liquid injection system to ensure that the nozzle angle and fluid characteristics are consistent with the actual operating conditions.

[0118] Measure the initial injection flow rate and start the injection system to eject gas and liquid at a constant initial pressure and flow rate.

[0119] Use a flow meter to measure the gas and liquid velocities at the nozzle outlet and take the average value as v g0 and v l0 as the initial velocity.

[0120] Verification and adjustment: Adjust the injection pressure and flow rate and conduct multiple experiments to confirm data stability and repeatability. If the data fluctuates greatly, calibrate by improving the nozzle design or optimizing the fluid pressure.

[0121] The method for obtaining the rotational speed response gain coefficients (k g1 and k l1 ) is as follows:

[0122] Set the basic experimental conditions. At a constant initial injection velocity v g0 and v l0 , start the drive motor 300 and gradually increase the rotational speed.

[0123] Measure the change in injection velocity and measure the gas and liquid injection velocities at different rotational speeds (e.g., 0%, 25%, 50%, 75%, 100% of the maximum rotational speed ω max ). Record the relationship between the injection velocity and the motor rotational speed.

[0124] Data fitting and calculation: Use linear regression or polynomial fitting analysis to fit the measured relationship between the change in injection velocity and the rotational speed into a linear model. And calculate k g1 and k l1 as the response coefficients of the injection velocity to the change in motor rotational speed.

[0125] Verify the gain coefficients: Repeat the experiment under different environmental and fluid conditions to ensure that k g1 and k l1 can be applied in practical applications.

[0126] The method for obtaining the maximum stable rotational speed (ω max ) is as follows:

[0127] Start the drive motor 300 and gradually increase the rotational speed to the maximum value allowed by its technical specifications. Record reaching the stable operating state.

[0128] Observe the stability: Ensure that the motor runs continuously at this rotational speed for at least a certain period of time (e.g., 5 - 10 minutes) and observe whether there are obvious vibrations or instability phenomena.

[0129] Record the data and record the highest rotational speed value under stable operation as ω max .

[0130] The method for obtaining the acceleration response gain coefficients (k g2 and k l2 ) is as follows:

[0131] Set the experimental conditions and set the motor to operate under different acceleration (acceleration and deceleration) states.

[0132] Measure the dynamic response of the injection speed and use an accelerometer to record the acceleration of the motor during startup and stop At the same time, measure the changes in the injection speeds of the gas and liquid under these acceleration conditions.

[0133] Data analysis: Through regression analysis, fit the dynamic response of the injection speed and the motor acceleration into a model.

[0134] Determine k g2 and k l2 as the gain coefficients for the adjustment of the injection speed by the acceleration.

[0135] Verification and optimization: Repeat the experiment under different motor acceleration and deceleration conditions to ensure that the obtained gain coefficients are valid under different working conditions.

[0136] Among them, according to the real-time rotational speed and the rotational speed change rate of the drive motor 300 during the acceleration process, and in combination with the interaction between the two injection fluids of gas and liquid, adjust the ejection speeds of the gas and the liquid, and form a stable injection flow after the drive motor 300 reaches a stable rotational speed. Among them, the combination of the interaction between the two injection fluids of gas and liquid is specifically:

[0137] Introduce a coupling term C(t). This formula is used to describe the interaction between the injected gas and the injected liquid in the contact area, especially the influence on the overall blocking effect when the gas and liquid flows injected in the first circular groove and the second circular groove meet. Specifically, the interaction influence between the ejection speeds of the two fluids can be calculated.

[0138] C(t) = α·v g (t)·v l (t)·cos(θ g -θ l ).

[0139] Where:

[0140] α is an adjustment factor used to describe the interaction strength between gas and liquid. Its specific value depends on nozzle structure, fluid properties (such as viscosity and density), and the design of the device. By adjusting α, the physical properties and operating conditions of different devices can be adapted, making the formula still valid under different spraying conditions.

[0141] θ g is the gas injection angle, which is the angle between the gas injection direction and the deflector surface, measured in degrees or radians. It determines the diffusion path of the gas during injection and the way it meets the liquid.

[0142] θ l is the liquid injection angle, which is the angle between the liquid injection direction and the deflector surface, measured in degrees or radians. It affects the directionality of the liquid flow and the way it intersects with the gas flow.

[0143] cos(θ g -θ l ) is the direction intersection factor, indicating the influence of the angle between the injection directions, and simulating the degree of intersection between the two fluids. When the gas and liquid injection directions are close (i.e., θ g and θ l are close), cos(θ g -θ l ) is close to 1, indicating a strong interaction between the two fluids. On the contrary, when the angle between the two is close to 90 degrees, cos(θ g -θ l ) approaches 0, and the interaction is weak.

[0144] The coupling term formula comprehensively reflects the dynamic behavior of the injected fluids in the device by considering the injection speeds, direction angles, and their interactions of the gas and liquid. The reasons for using this formula are as follows:

[0145] Firstly, in practical applications, the injected gas and liquid will produce complex interactions in the contact area, including phenomena such as guiding, interfering, or merging. By using α, speed, and angle factors, this formula can capture the effects of these interactions, thus more accurately adjusting the injection speed to maintain a stable blocking layer.

[0146] Secondly, the introduction of cos(θ g -θ l ) reflects the influence of the gas and liquid flows at different injection angles. When the two directions are the same, the liquid is more easily guided by the gas to form a stable blocking layer; while when the angle difference is large, the interaction weakens and the stability of the blocking layer decreases.

[0147] Moreover, α provides flexibility, allowing adjustment according to different devices and injection conditions, ensuring that this formula can accurately reflect the interaction between gas and liquid in various practical application scenarios.

[0148] In summary, this formula accurately simulates the interaction between gas and liquid jets through the coupling of velocity and angle, helping the control system to adjust the jet velocity in real time, thereby optimizing the blocking effect and maintaining the stable operation of the purification device.

[0149] Among them, obtaining the proportionality constant α requires determination through experiments and data analysis in order to accurately reflect the interaction between gas and liquid under different device conditions and jet environments. The following are the detailed steps:

[0150] First, prepare the experimental device. Prepare an experimental system identical to the actual purification device, including the first and second circular tanks, the drive motor 300, the gas and liquid jet systems. Install a high-speed camera and a flow velocity sensor in the jet area to capture the velocity and intersection of the jet fluids. Also, install an angle sensor on the device to measure the angles of gas and liquid jets in real time.

[0151] Second, collect data. Adjust the rotation speed and rotation speed change rate of the drive motor 300, and test different combinations of gas and liquid jet velocities and jet angles respectively. Record the intersection area of gas and liquid jets through the high-speed camera and sensors, and analyze the interaction of the jet fluids. Then, measure the thickness and stability of the blocking layer under different combinations of jet velocities and angles through a flowmeter and visual analysis software.

[0152] Next, preliminarily calculate α. Organize the jet effect data measured under different velocity and angle combinations in the experiment into a data table, and mark the stability and effect of the blocking layer under each combination.

[0153] Establish the equation:

[0154] C(t) = α·v g (t)·v l (t)·cos(θ g -θ l )

[0155] Substitute the experimental data and calculate the α value under each combination.

[0156] Then, data fitting and model optimization. Fit the α values calculated in the experiment with the corresponding jet conditions to find the α model that best explains the data (such as linear regression or multiple regression analysis). Adjust the fitting model to ensure that this α value can adapt to different jet velocity and angle conditions in actual use.

[0157] Next, verify and calibrate. Run the adjusted α value in the actual purification device environment to verify its effectiveness under different working conditions. Calibrate α. According to the gap between the actual spraying effect and the desired effect, fine-tune α to ensure that the stability and thickness of the blocking layer are maintained within the ideal range under various working conditions.

[0158] Finally, establish standards and documentation. Record the verified and calibrated α constant, and establish a database or lookup table for the specific values under different conditions. Also, organize the experimental process, data analysis methods, fitting models, and verification results to form a complete experimental report, providing a basis for subsequent applications and optimizations.

[0159] It should be noted that the value of α may be affected by factors such as environmental temperature and the physical properties of the spraying substance (such as viscosity and density). Therefore, various conditions should be covered as much as possible in the experiment to obtain a more generally applicable α. And in modern automatic control, the dynamic adjustment of α can be achieved through an adaptive algorithm, enabling it to automatically optimize according to the device feedback in real-time applications. Through this method, α can better reflect the interaction between gas and liquid in the spraying area in practical applications, thus ensuring the formation of a stable and efficient blocking layer.

[0160] Method for controlling the spraying of gas and liquid during the stopping stage of the drive motor 300:

[0161] Obtain the real-time rotational speed and the rate of change of the rotational speed of the drive motor 300.

[0162] Obtain the gas spraying speed and the liquid spraying speed based on the real-time rotational speed and the rate of change of the rotational speed of the drive motor 300.

[0163] Obtain the corrected gas spraying speed and the corrected liquid spraying speed based on the interaction between the sprayed gas and the sprayed liquid.

[0164] Adjust the real-time gas spraying speed and the real-time liquid spraying speed according to the real-time rotational speed and the rate of change of the rotational speed of the drive motor 300 to keep the blocking layer stable.

[0165] When the rotational speed of the drive motor 300 is close to zero, gradually reduce the real-time gas spraying speed and the real-time liquid spraying speed to prevent the liquid from flowing back or seeping into the gaps of the device.

[0166] Furthermore, the real-time spraying conditions of the gas and the real-time spraying conditions of the liquid can be continuously monitored through a feedback system, and the spraying speed and angle can be adjusted as needed.

[0167] Among them, obtaining the real-time rotational speed and the rate of change of the rotational speed of the drive motor 300 specifically means:

[0168] Gradually reduce the rotational speed of the drive motor 300 and monitor the real-time rotational speed ω of the output shaft stop (t) and the deceleration

[0169] Among them, the gas ejection speed v g (t) and the liquid ejection speed v l (t):

[0170]

[0171] Among them:

[0172] v gfinal and v lfinal are the final ejection speeds, representing the basic ejection speeds reached by the gas and liquid respectively during the motor deceleration stage, with the unit of m / s, providing a stable ejection reference during the stop stage to ensure sufficient basic ejection force for fluid flow.

[0173] m g1 and m l1 are the rotational speed attenuation coefficients, which are used to adjust the amplitude of the ejection speed reduction with the decrease of the rotational speed, and can be used to control how the ejection speed linearly decays according to the decrease of the real-time rotational speed of the motor, ensuring that the ejection speed changes synchronously with the motor rotational speed.

[0174] ω stop (t) is the real-time rotational speed, representing the current rotational speed of the motor during the stop stage, with the unit of rad / s or rpm, which can reflect the dynamic state of the motor in real time so as to adjust the ejection speed to match the current motor state.

[0175] ω max is the maximum stable rotational speed, representing the maximum stable operating rotational speed that the motor can reach, with the unit of rad / s or rpm, used as a standardized reference for normalizing the current rotational speed, enabling the adjustment of the ejection speed to have a relative reference framework.

[0176] m g2 and m l2 are the deceleration adjustment coefficients, reflecting how the ejection speed is adjusted according to the deceleration rate. Compensate for the inertial effect of the motor during deceleration. A higher deceleration will cause the ejection path of the fluid to be unstable, and this item helps to balance the inertial change of the fluid.

[0177] is the rotational speed change rate, or deceleration, representing the change rate of the motor rotational speed during the stop stage, representing the deceleration of the motor, with the unit of rad / s 2 , which can be used to dynamically reflect the acceleration or deceleration behavior of the motor during the stop process, affecting the adjustment of the ejection speed to compensate for the behavior of the fluid under the action of inertial force.

[0178] C(t) is the coupling term, which is used to reflect the interaction between gas and liquid injection, and reflects the interference and guiding effects of fluid flow in the injection intersection area, with the unit of m / s. By comprehensively considering the injection speed and angle relationship between gas and liquid, it is ensured that the adjustment of the injection speed during the stop phase can balance the fluid interaction and keep the blocking layer stable.

[0179] Moreover, during the stop phase, the interaction between the gas and liquid injection flows becomes complex. The coupling term C(t) provides a correction factor to capture the impact of this interaction on the injection speed, such as the gas guiding the liquid flow, the liquid obstructing the gas flow, or the mixing effect. Since the changes in the motor speed and deceleration during the stop phase may cause the injection flow to be unstable, the coupling term is used to smooth these changes, make the injection speed more stable, and prevent the sudden change of the injection flow from affecting the thickness and uniformity of the blocking layer. The coupling term helps to make real-time adjustments according to the actual injection conditions to cope with the uncertainty of fluid flow during the motor stop process. It can ensure that the adjustment of the injection speed is closer to the physical reality, thus maintaining the integrity and stability of the blocking layer during the stop process.

[0180] Furthermore, a detailed explanation of the stop phase formula:

[0181] The basic injection speed terms (v gfinal and v lfinal ), the basic speed terms are used to provide a stable starting point for the injection speed, ensuring that the gas and liquid injections can maintain sufficient power throughout the deceleration process during the stop phase to form and maintain the blocking layer. This term ensures that there is a basic initial value for the injection speed during the process of the rotational speed of the drive motor 300 gradually decreasing, preventing the injection flow from suddenly decreasing or becoming unstable when the motor just starts to decelerate.

[0182] The rotational speed decay terms ( and ), during the motor stop process, as the rotational speed decreases, the fluid behavior will be affected by the weakening of the centrifugal force. This term dynamically reduces the injection speed according to the ratio of the real-time rotational speed to the maximum stable rotational speed. Through this decay term, the injection speed gradually decreases as the motor rotational speed gradually decreases. This can make the injection speed synchronize with the state of the decelerating motor, preventing excessive injection from causing fluid instability or uneven thickness of the blocking layer.

[0183] The deceleration adjustment terms ( and ) During the stop phase, the deceleration of the motor is accompanied by a significant deceleration rate, which can cause the influence of fluid inertial forces, potentially leading to the deviation or instability of the jet flow. This adjustment term is used to compensate for the inertial effects generated during deceleration and ensure the stability of the jet. The deceleration term dynamically adjusts the jet velocity according to the rate of change of the motor deceleration. If the deceleration is large, the inertial force will significantly affect the stability of the fluid, and this term helps to adjust the jet velocity to balance the inertial effects and maintain a stable jet flow.

[0184] Coupling term (C(t)), during the stop phase, the interaction between the gas and liquid fluids still exists, especially when the jet velocity decreases and the hydrodynamic characteristics change. The coupling term is used to reflect the adjustment and compensation of these interactions. Logic: The coupling term enables the jet velocity to be finely adjusted according to the convergence and interaction of the gas and liquid fluids during the stop process. It takes into account the influence of both in the contact area, helps to maintain the thickness and uniformity of the blocking layer, and prevents fluid infiltration or blocking layer rupture due to instability during the stop process.

[0185] In summary, when the motor stops, both the rotational speed and deceleration are constantly changing, which directly affects the jet behavior of the fluid. By including the rotational speed and deceleration terms in the formula, the jet velocity is allowed to be dynamically adjusted according to the real-time motor state, preventing sudden velocity changes from causing jet instability. During the stop phase, the inertial effects have a greater impact on the jet fluid, especially when the deceleration is large. Through the deceleration adjustment term, the jet velocity can respond to the rate of change of deceleration, balance the inertial effects of the fluid, and maintain the stability of the fluid flow. As the motor rotational speed decreases, the centrifugal force weakens, and the fluid may lose the stability of the jet path. The rotational speed decay term and the coupling term are used in combination to ensure that the jet velocity can gradually decrease and maintain the integrity of the blocking layer during the motor deceleration process. The introduction of the coupling term aims to consider the dynamic interaction between the gas and liquid. It helps to adjust the jet velocity during the stop phase, enabling it to adapt to the complex flow behavior brought about by the fluid convergence, ensuring that the blocking layer remains stable during the stop, and preventing the liquid from infiltrating into the device gaps due to uneven jetting.

[0186] Among them, according to the interaction between the jet gas and the jet liquid, the corrected gas jet velocity and the corrected liquid jet velocity are obtained, where, according to the interaction between the jet gas and the jet liquid specifically:

[0187] The coupling term C(t) is introduced to calculate the interaction effect of the ejection velocities of the two fluids.

[0188] The coupling term is C(t), which depends on the jet velocities of the gas and liquid, the jet directions, and the contact area between the two.

[0189] C(t) = α·v g (t)·v l (t)·cos(θg -θ l )。

[0190] Wherein:

[0191] α is the proportionality constant of the interaction, which is adjusted based on the nozzle structure and the physical properties of the fluid.

[0192] θ g and θ l are the gas and liquid injection angles respectively.

[0193] cos(θ g -θ l ) represents the angular influence between the injection directions and simulates the degree of intersection between the two fluids.

[0194] The above content described in this specification is only an example of the present invention. Those skilled in the art to which the present invention pertains can make various modifications or supplements to the specific embodiments described or use similar ways to substitute, as long as they do not deviate from the content of this specification of the present invention or exceed the scope defined by this claims, they should fall within the protection scope of the present invention.

Claims

1. A purification device for semiconductors, the purification device is used to remove impurities on the surface of a wafer, characterized in that: include: A material seat, the material seat rotates in a controlled manner, and the material seat includes a placement plane for placing a wafer; A guide seat, the guide seat rotates in a controlled manner, and the rotation axis of the guide seat is coaxially arranged with the rotation axis of the material seat, the guide seat includes a guide surface, the rotation axis of the guide seat is perpendicular to the guide surface, and the edge contour of the guide surface is circular, the radius corresponding to the edge contour of the guide surface is smaller than the radius of the wafer coaxially placed on the placement plane, the guide surface side of the guide seat is provided with a first annular groove and a second annular groove, the first annular groove and the second annular groove are concentrically arranged, and the radius of the first annular groove is smaller than the radius of the second annular groove, the material seat A first flow channel and a second flow channel are provided in the material holder, one end of the first flow channel is connected to the first annular groove, the other end of the first flow channel is connected to an air source, one end of the second flow channel is connected to the second annular groove, and the other end of the second flow channel is connected to a liquid source, wherein the opening direction of the first annular groove forms a first preset angle with the rotation axis of the material holder, the opening direction of the second annular groove forms a second preset angle with the rotation axis of the material holder, and a first gap exists between the guide surface and the placement plane, so that the placement plane of the material holder protrudes from the guide surface of the guide seat; A flow guide member, the flow guide member rotates in a controlled manner, and the rotation axis of the flow guide member is coaxially arranged with the rotation axis of the flow guide seat, the flow guide member comprises a flow guide surface, the flow guide surface is perpendicular to the rotation axis of the flow guide member, and a second gap exists between the flow guide surface of the flow guide member and the flow guide surface of the flow guide seat, so that the flow guide surface of the flow guide seat protrudes from the flow guide surface of the flow guide member; A cleaning component is arranged on a side of the material seat away from the guide member, and the cleaning component comprises a nozzle, and a nozzle of the nozzle is arranged toward the placement plane.

2. A purification device for semiconductors according to claim 1, characterized in that: A first main flow channel is provided in the flow guide seat, and the number of the first main flow channels provided in the flow guide seat is several, and one end of the several first main flow channels away from the first annular groove is connected to the inside of the first main flow channel, and the first main flow channel is connected to the gas source through a pipeline; A second main flow channel is provided in the flow guide seat. The number of the second main flow channels provided in the flow guide seat is several. One end of each second main flow channel away from the second annular groove is connected to the interior of the second main flow channel. The second main flow channel is connected to a liquid source through a pipeline.

3. A purification device for semiconductors according to claim 1, characterized in that: The guide seat has a first connecting groove communicating with the first flow channel and a second connecting groove communicating with the second flow channel formed inside, and a third annular groove communicating with the first connecting groove and a fourth annular groove communicating with the second connecting groove formed on the outer circumference of the guide seat; The drainage surface of the drainage member is provided with an annular embedding groove, and the drainage member comprises an annular component, and the annular component is detachably arranged in the annular embedding groove, and the annular component is composed of a plurality of concentrically arranged annular components; An extension ring, wherein a third flow channel and a fourth flow channel are provided inside the extension ring, and a fifth annular groove and a sixth annular groove are provided concentrically on the side of the extension ring away from the guide member, one end of the third flow channel is connected to the fifth annular groove, one end of the fourth flow channel is connected to the sixth annular groove, and the extension ring is configured so that when the annular member closest to the guide seat is replaced by the extension ring, the outer peripheral side wall of the extension ring is fitted with the inner peripheral side wall of the adjacent annular member, and the inner peripheral side wall of the extension ring is fitted with the outer peripheral side wall of the guide seat, so that the other end of the third flow channel in the extension ring is connected to the third annular groove, and the other end of the fourth flow channel in the extension ring is connected to the fourth annular groove.

4. A purification device for semiconductors according to claim 3, characterized in that: The opening direction of the fifth annular groove forms a third preset angle with the rotation axis of the material seat, and the opening direction of the sixth annular groove forms a fourth preset angle with the rotation axis of the material seat.

5. A purification device for semiconductors according to any one of claims 1 to 4, characterized in that: Also includes: A rotating shaft, the rotating shaft is controlled to rotate, the rotating shaft is connected to the material seat, the rotating shaft is connected to the flow guide seat, the rotating shaft is connected to the flow guide member, and the axis of the rotating shaft is coaxially arranged with the rotation axis of the material seat, the rotation axis of the flow guide seat and the rotation axis of the flow guide member; A driving motor, wherein the output shaft of the driving motor is drivingly connected to the rotating shaft.

6. A purification device for semiconductors according to claim 5, characterized in that: Also includes: The liquid collector comprises an annular liquid collecting trough, which is coaxially arranged outside the rotating shaft, and the notch of the liquid collecting trough is arranged lower than the drainage surface on the drainage member.

7. A purification device for semiconductors according to any one of claims 1 to 4, characterized in that: Also includes: A box body, wherein the box body comprises a first accommodating space, and the material seat, the flow guide seat, the flow guide member and the nozzle are all arranged in the first accommodating space; A control cabinet, wherein the control cabinet comprises a second accommodating space, and the box body is arranged in the second accommodating space.

8. A control method for a semiconductor purification device as claimed in claim 5, characterized in that: include: The method for controlling the injection of gas and liquid during the start-up phase of the drive motor comprises: Obtaining the real-time rotation speed of the drive motor and the rotation speed change rate of the drive motor; Determining the initial ejection velocity of the gas and the initial ejection velocity of the liquid according to the real-time rotation speed of the driving motor; According to the real-time rotation speed and rotation speed change rate of the driving motor during acceleration, and in combination with the interaction between the injected gas and the injected liquid, the injection speed of the gas and the injection speed of the liquid are adjusted, and a stable injection flow is formed after the rotation speed of the driving motor stabilizes.

9. A control method for a semiconductor purification device according to claim 8, characterized in that: Also includes: The method for controlling the injection of gas and liquid by the driving motor during the stop phase comprises: Obtaining the real-time rotation speed of the drive motor and the rotation speed change rate of the drive motor; deriving the gas injection speed and the liquid injection speed according to the real-time rotation speed of the driving motor and the rotation speed change rate of the driving motor; According to the interaction between the injected gas and the injected liquid, a corrected gas injection velocity and a corrected liquid injection velocity are obtained; According to the real-time rotation speed and the rotation speed change rate of the driving motor, the real-time injection speed of the gas and the real-time injection speed of the liquid are adjusted to keep the blocking layer stable.

10. A control method for a semiconductor purification device according to claim 8 or 9, characterized in that: The interaction between the injected gas and the injected liquid is obtained by the following formula: C(t)=α·v g (t)·v l (t)·cos(θ g -θ l ); in: α is the proportionality constant of the interaction, which is adjusted based on the nozzle structure and fluid physical properties; θ g are the gas injection angles, respectively; θ l is the liquid injection angle; v g is the gas jet velocity; v l (t) is the liquid injection velocity.

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