Large-frequency-difference low-insertion-loss ceramic dielectric duplexer with special-shaped structure

Abstract

The invention discloses a large-frequency-difference low-insertion-loss ceramic dielectric duplexer with a special-shaped structure, and the duplexer comprises a ceramic dielectric main body with a special-shaped structure, the ceramic dielectric main body comprises a first main body part and a second main body part, and the first main body part is higher than the second main body part; the first through hole group is arranged on the first main body part and penetrates through the first main body part; the second through hole group is arranged on the second main body part and penetrates through the second main body part; the groove is formed in the other surface of the first main body part; an opening of the first through hole set is located in the groove. According to the duplexer, the two sections of main body parts with different heights are arranged on the ceramic dielectric main body, so that the frequency difference between a low-end frequency band and a high-end frequency band can be conveniently adjusted by adjusting the height difference between the two sections of main body parts, and the large frequency difference requirement of the low-end frequency band and the high-end frequency band of the duplexer is met. And meanwhile, one side of the ceramic main body part of the low-end frequency band is provided with a groove, so that inductive coupling is enhanced to form a larger bandwidth, and insertion loss is smaller.

Description

Technical Field

[0001] The invention relates to the field of filters, and in particular to a ceramic dielectric duplexer with a special-shaped structure and large frequency difference and low insertion loss. Background Art

[0002] Dielectric filters are formed by coupling between dielectric resonators. Dielectric resonator filters have high Q values ​​and low insertion losses. There are many types of communication filters, and different types of filters have different frequency ranges and applications. Ceramic dielectric duplexers are mainly used in microwave communication systems to achieve two-way communication by combining and separating the transmitted and received signals.

[0003] In recent years, with the rapid development of microwave communication systems, communication manufacturers have put forward higher performance and size requirements for filter manufacturers, especially the requirements for diverse and convenient frequency differences between the transmitting and receiving ends and low insertion loss. Currently, the demand for frequency differences is mostly in the range of 20MHz-150MHz. If the required frequency difference is larger, such as 190MHz, it is difficult to meet the existing design or the design is difficult. Summary of the invention

[0004] In view of the background technology, the present invention aims to provide a ceramic dielectric duplexer with a large frequency difference and low insertion loss of a special-shaped structure to improve the above-mentioned problems.

[0005] A ceramic dielectric duplexer with a large frequency difference and low insertion loss of a special-shaped structure, comprising:

[0006] A ceramic dielectric body with a special-shaped structure comprises a first main body and a second main body, wherein the first main body and the second main body both have an open surface and a short surface that are arranged opposite to each other, the first main body and the second main body are flush on one side of the open surface or the short surface, and form a step structure on the other side; and the first main body is higher than the second main body;

[0007] A first through hole group is provided on the first main body portion and penetrates the first main body portion along the direction of the open surface and the short-circuit surface;

[0008] A second through hole group is provided in the first main body and penetrates the second main body along the direction of the open surface and the short-circuit surface;

[0009] A groove is arranged on the other side of the first main body forming the step structure; the opening of the first through hole group on the other side is located in the groove.

[0010] Preferably, the open surfaces of the first main body portion and the second main body portion are flush with each other, forming the step structure on the short-circuit surface.

[0011] Preferably, the number of through holes in the first through hole group and the second through hole group is 3, forming 6 through holes arranged side by side and with central axes parallel to each other.

[0012] Preferably, it also includes side surfaces arranged on the open surface and the periphery of the short-circuit surface; the interior of the through hole and the side surfaces are metallized to form a metal covering layer; each through hole forms a metal loading layer with a specific shape on the open surface in a one-to-one correspondence;

[0013] A high-end port electrode is formed at a position adjacent to the side surface and one end of the open surface of the first main body, and the high-end port electrode is connected to the metal loading layer of the adjacent through hole, thereby forming a capacitive coupling electrode with the adjacent through hole;

[0014] A low-end port electrode is formed at a position adjacent to the side surface and one end of the open surface of the second main body, and the low-end port electrode is connected to the metal loading layer of the adjacent through hole, thereby forming a capacitive coupling electrode with the adjacent through hole;

[0015] A common port electrode is formed at a position adjacent to the first main body portion and the second main body portion, and the common port electrode is connected to the metal loading layer of the adjacent through hole, thereby forming a capacitive coupling electrode with the two adjacent through holes.

[0016] Preferably, the metal covering layer is a silver layer coated on the ceramic dielectric body by an immersion silver metallization process.

[0017] Preferably, the metal loading layer is formed by laser engraving the metal covering layer.

[0018] Preferably, the height difference of the step structure ranges from 0.5 mm to 5 mm.

[0019] Preferably, inductive coupling is formed between the metal loading layers of the through holes of the first through hole group.

[0020] Preferably, the groove has a depth ranging from 0.5 to 3 mm and a width ranging from 1.7 to 3 mm.

[0021] Preferably, capacitive coupling is formed between the metal loading layers of the through holes of the second through hole group.

[0022] The large frequency difference and low insertion loss ceramic dielectric duplexer with a special-shaped structure proposed by the present invention has the following advantages:

[0023] 1. Two main bodies with different heights are arranged on the ceramic dielectric body. The frequency difference between the low-end frequency band and the high-end frequency band can be adjusted conveniently by adjusting the height difference between the two main bodies, so as to meet the large frequency difference requirement between the low-end frequency band and the high-end frequency band of the duplexer and facilitate diversified design.

[0024] 2. By opening a groove on one side of the ceramic main body in the low-end frequency band, the inductive coupling is enhanced to form a larger bandwidth and smaller insertion loss. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 This is a first axial side view of a ceramic dielectric duplexer with a large frequency difference and low insertion loss of a special-shaped structure provided by an embodiment of the present invention;

[0026] Figure 2 This is a second axial view of a ceramic dielectric duplexer with a large frequency difference and low insertion loss of a special-shaped structure provided by an embodiment of the present invention;

[0027] Figure 3 This is an actual test waveform diagram of a ceramic dielectric duplexer with a large frequency difference and low insertion loss of a special-shaped structure provided by an embodiment of the present invention;

[0028] The markings in the accompanying drawings are: first main body 1, first open surface 11, first short-circuit surface 12, first through hole 13, groove 14, second main body 2, second open surface 21, second short-circuit surface 22, second through hole 23, metal covering layer 3, metal loading layer 4, high-end port electrode 5, low-end port electrode 6, common port electrode 7, inductor line 8, capacitive position 9. DETAILED DESCRIPTION

[0029] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present invention clearer and more understandable, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0030] See also Figure 1 and Figure 2 The embodiment of the present invention provides a ceramic dielectric duplexer with a large frequency difference and low insertion loss and a special-shaped structure. The ceramic dielectric body of the special-shaped structure is roughly in the shape of a special-shaped rectangular parallelepiped, which can be obtained by pressing powder into a shape by a press and sintering it into porcelain at a high temperature.

[0031] Specifically, the ceramic dielectric body includes a first body part 1 and a second body part 2, and the first body part 1 and the second body part 2 both have an open surface and a short path surface that are arranged opposite to each other. The first body part 1 and the second body part 2 are flush on one side of the open surface or the short path surface, and form a step structure on the other side; and the first body part 1 is higher than the second body part 2.

[0032] For example, the first main body 1 has a first open surface 11 and a first short-circuit surface 12 that are oppositely disposed, and the second main body 2 has a second open surface 21 and a second short-circuit surface 22 that are oppositely disposed. The first open surface 11 is flush with the second open surface 12, and the first short-circuit surface 12 and the second short-circuit surface 22 have a height difference to form a step structure. Specifically, the height difference of the step structure ranges from 0.5 mm to 5 mm.

[0033] Of course, in other embodiments of the present invention, the open surface may form a step structure while the short road surface is flush, and these solutions are also within the protection scope of the present invention. For ease of description, the following description is based on an example in which the open surface is flush and the short road surface forms a step structure, but it should not be understood as a limitation of the present invention.

[0034] In this embodiment, it also includes:

[0035] The first through hole group is disposed in the first main body portion 1 and penetrates the first main body portion 1 along the direction of the open surface and the short-circuit surface.

[0036] A second through hole group is provided on the second main body portion 2 and penetrates the second main body portion 2 along the direction of the open surface and the short-circuit surface;

[0037] Specifically, the first through hole group includes three first through holes 13, and the second through hole group includes three second through holes 23, thereby forming six through holes arranged side by side and having central axes parallel to each other.

[0038] The groove 14 is provided on the other side of the first main body 1 forming the step structure; the opening of the first through hole group on the other side is located in the groove 14 .

[0039] Specifically, the groove 14 is arranged on the first short-circuit surface 12, and its depth ranges from 0.5 to 3 mm, and its width ranges from 1.7 to 3 mm, so that the openings of the first through hole group on the first short-circuit surface 12 are all accommodated in the groove. Preferably, the depth is 0.8 mm, and the width is 1.8 mm.

[0040] In this embodiment, in particular, it also includes a side surface arranged on the open surface and the periphery of the short-circuit surface; the interior of the through hole and the side surface are metallized to form a metal covering layer 3; each through hole forms a metal loading layer 4 with a specific shape on the open surface. The metal covering layer 3 is a silver layer coated on the ceramic dielectric body by a silver immersion metallization process, and the metal loading layer 4 is formed by laser engraving the metal covering layer 3, and the thickness is preferably 10um.

[0041] In this embodiment, further, a high-end port electrode 5 is formed at a position adjacent to one end of the first open surface 11 of the first main body 1 on the side surface, and the high-end port electrode 5 is connected to the metal loading layer 4 of the adjacent through hole 13, thereby forming a capacitive coupling electrode with the adjacent through hole 13;

[0042] A low-end port electrode 6 is formed at a position adjacent to the side surface and one end of the second open surface 21 of the second main body 2, and the low-end port electrode 6 is connected to the metal loading layer 4 of the adjacent through hole 23, thereby forming a capacitive coupling electrode with the adjacent through hole 23;

[0043] A common port electrode 7 is formed at a position adjacent to the first main body 1 and the second main body 2, and the common port electrode 7 is connected to the metal loading layer 4 of the adjacent through hole, thereby forming a capacitive coupling electrode with the two adjacent through holes. Here, one of the two through holes belongs to the first through hole group, and the other belongs to the second through hole group.

[0044] In this embodiment, further, the three first through holes 13 of the first through hole group are inductively coupled by means of inductor lines 8, and the groove 14 serves to enhance the inductive coupling, thereby widening the filter bandwidth. The three second through holes 23 of the second through hole group are capacitively coupled by means of capacitor positions 9.

[0045] like Figure 3 The figure shows the actual test waveform of the embodiment of the present invention. The center frequency of the low-end frequency band is 1995 MHz, and the center insertion loss is minimum 0.6 dB; the center frequency of the high-end frequency band is 2185 MHz, and the center insertion loss is minimum 0.8 dB; the frequency difference between the low-end frequency band and the high-end frequency band is 190 MHz, and the isolation is greater than 30 dB.

[0046] In summary, the large frequency difference and low insertion loss ceramic dielectric duplexer with a special-shaped structure proposed in the embodiment of the present invention has the following advantages:

[0047] 1. Two main bodies with different heights are arranged on the ceramic dielectric body. The frequency difference between the low-end frequency band and the high-end frequency band can be adjusted conveniently by adjusting the height difference between the two main bodies, so as to meet the large frequency difference requirement between the low-end frequency band and the high-end frequency band of the duplexer and facilitate diversified design.

[0048] 2. By opening a groove on one side of the ceramic main body in the low-end frequency band, the inductive coupling is enhanced to form a larger bandwidth and smaller insertion loss.

[0049] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, it should be understood by those skilled in the art that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features thereof may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A ceramic dielectric duplexer with a large frequency difference and low insertion loss of a special-shaped structure, characterized in that: include: A ceramic dielectric body with a special-shaped structure comprises a first main body and a second main body, wherein the first main body and the second main body both have an open surface and a short surface that are arranged opposite to each other, the first main body and the second main body are flush on one side of the open surface or the short surface, and form a step structure on the other side; and the first main body is higher than the second main body; A first through hole group is provided on the first main body portion and penetrates the first main body portion along the direction of the open surface and the short-circuit surface; A second through hole group is provided on the second main body portion and penetrates the second main body portion along the direction of the open surface and the short-circuit surface; A groove is arranged on the other side of the first main body forming the step structure; the opening of the first through hole group on the other side is located in the groove.

2. The ceramic dielectric duplexer with large frequency difference and low insertion loss of a special-shaped structure according to claim 1, characterized in that: The open surfaces of the first main body and the second main body are flush with each other, forming the step structure on the short-circuit surface.

3. The ceramic dielectric duplexer with large frequency difference and low insertion loss of a special-shaped structure according to claim 1, characterized in that: The number of through holes in the first through hole group and the second through hole group are both 3, forming 6 through holes arranged side by side and with central axes parallel to each other.

4. The ceramic dielectric duplexer with large frequency difference and low insertion loss of a special-shaped structure according to claim 2, characterized in that: It also includes a side surface arranged on the open surface and the periphery of the short-circuit surface; the interior of the through hole and the side surface are metallized to form a metal covering layer; each through hole forms a metal loading layer with a specific shape on the open surface in a one-to-one correspondence; A high-end port electrode is formed at a position adjacent to the side surface and one end of the open surface of the first main body, and the high-end port electrode is connected to the metal loading layer of the adjacent through hole, thereby forming a capacitive coupling electrode with the adjacent through hole; A low-end port electrode is formed at a position adjacent to the side surface and one end of the open surface of the second main body, and the low-end port electrode is connected to the metal loading layer of the adjacent through hole, thereby forming a capacitive coupling electrode with the adjacent through hole; A common port electrode is formed at a position adjacent to the first main body portion and the second main body portion, and the common port electrode is connected to the metal loading layer of the adjacent through hole, thereby forming a capacitive coupling electrode with the two adjacent through holes.

5. The ceramic dielectric duplexer with large frequency difference and low insertion loss of a special-shaped structure according to claim 4, characterized in that: The metal covering layer is a silver layer coated on the ceramic dielectric body by an immersion silver metallization process.

6. The ceramic dielectric duplexer with large frequency difference and low insertion loss of a special-shaped structure according to claim 5, characterized in that: The metal loading layer is formed by laser engraving the metal covering layer.

7. The ceramic dielectric duplexer with large frequency difference and low insertion loss of a special-shaped structure according to claim 1, characterized in that: The height difference of the step structure ranges from 0.5 mm to 5 mm.

8. The ceramic dielectric duplexer with large frequency difference and low insertion loss of a special-shaped structure according to claim 4, characterized in that: Inductive coupling is formed between the metal loading layers of the through holes of the first through hole group.

9. The ceramic dielectric duplexer with large frequency difference and low insertion loss of a special-shaped structure according to claim 1, characterized in that: The depth of the groove is in the range of 0.5-3 mm, and the width is in the range of 1.7-3 mm.

10. The ceramic dielectric duplexer with large frequency difference and low insertion loss of a special-shaped structure according to claim 4, characterized in that: Capacitive coupling is formed between the metal loading layers of the through holes of the second through hole group.

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