High-power wave-stabilized semiconductor laser and laser device

Abstract

The invention discloses a high-power wave-stabilized semiconductor laser and a laser device. The semiconductor laser comprises a chip module, a wave stabilization module and a transmission device, the output end of the wave stabilization module is connected with the first end of the transmission device through an optical fiber, and the output end of the chip module is connected with the second end of the transmission device through an optical fiber; the wave stabilization module is used for generating a wave stabilization light beam, and the wave stabilization light beam is transmitted to the chip module through the first end and the second end of the transmission device; the chip module is used for receiving the wave-stabilized light beam and generating a wave-stabilized pump light beam, and the pump light beam is coupled to the second end of the transmission device and then is output by the third end of the transmission device. According to the technical scheme, the VBG is installed and adjusted in the wave stabilizing module, light generated by the wave stabilizing module is used as seed light, the chip module is excited to output high-power laser with the consistent wavelength, the power density of the surface of the VBG is small, the VBG is prevented from being burnt down, and the situation that cost is too high due to the fact that multiple VBGs are used is avoided.

Description

Technical Field

[0001] The present invention relates to the field of laser technology, and in particular to a high-power wave-stabilized semiconductor laser and a laser device. Background Art

[0002] Fiber-optic semiconductor lasers play an important role in industrial cutting, medicine, beauty, lidar and other fields because of their highly stable beam output, good beam quality and high electro-optical efficiency.

[0003] However, semiconductor lasers have a major disadvantage - poor spectral quality. The wavelength drifts greatly with changes in operating current and heat sink temperature, and the spectral linewidth is wide. It is easy to cause a mismatch between the central wavelength of the semiconductor laser and the absorption peak of the pumped gain material, which greatly affects the output efficiency and reliability of semiconductor laser pumping in high-power semiconductor lasers, limiting its further application as a pump light source in the field of material processing.

[0004] At present, volume Bragg grating (VBG) technology is widely used in the production and manufacturing of wavelength-stabilized pump sources. When the light wave is transmitted along the direction of the refractive index modulation period, wavelength-selective reflection will occur if the Bragg diffraction condition is met. It is placed outside the semiconductor chip perpendicular to the direction of light beam transmission to form an external cavity. After wavelength-selective emission in the external cavity, the output wavelength of the semiconductor laser is stabilized at this Bragg wavelength. In the traditional VBG wave-locking structure, one is to set the VBG at the very end of the output light path, which will bear all the power and have the risk of burning; the other is to set multiple VBGs scattered at the front end of the light path, which requires a large number of VBGs, and the VBG is expensive and costly. Summary of the invention

[0005] The embodiment of the present invention provides a high-power wave-stabilized semiconductor laser and a laser device. The semiconductor laser is equipped with a VBG in a wave-stabilizing module, and the light generated by the wave-stabilizing module is used as a seed light, so that the chip module outputs a high-power laser with a consistent wavelength. The power density on the surface of the VBG is small, so that the VBG is prevented from burning, and the use of multiple VBGs can avoid the high cost caused by using multiple VBGs.

[0006] According to one aspect of the present invention, a high-power wave-stabilized semiconductor laser is provided, comprising a chip module, a wave-stabilizing module and a transmission device.

[0007] The output end of the wave stabilization module is connected to the first end of the transmission device through an optical fiber, and the output end of the chip module is connected to the second end of the transmission device through an optical fiber;

[0008] The wave stabilization module includes a first laser chip and a volume Bragg grating. The output beam of the first laser chip is modulated by the volume Bragg grating to form a wave stabilization beam. The wave stabilization beam is transmitted to the chip module through the first end and the second end of the transmission device. The wavelength of the wave stabilization beam is equal to the Bragg wavelength of the volume Bragg grating.

[0009] The chip module is used to receive the stabilized light beam and generate a stabilized pump light beam. After the pump light beam is coupled to the optical fiber at the second end of the transmission device, it is output from the third end of the transmission device.

[0010] As a preferred solution, the transmission device includes a 2×1 fiber combiner, a first input end of the fiber combiner is connected to the output end of the wave stabilization module, a second input end of the fiber combiner is connected to the output end of the chip module, and a pump beam is output from the output end of the fiber combiner.

[0011] As a preferred solution, the transmission device includes a fiber circulator, a first end of the fiber circulator is connected to the output end of the wave stabilization module, a second end of the fiber circulator is connected to the output end of the chip module, and the pump beam is output from the third end of the fiber circulator.

[0012] As a preferred solution, a mode stripper is also included, the input end of the mode stripper is connected to the third end of the transmission device, and the mode stripper is used to filter out residual cladding light in the optical fiber at the third end of the transmission device.

[0013] As a preferred solution, the wave stabilization module also includes a fast-axis collimator, a slow-axis collimator, a coupling lens and a first optical fiber arranged in sequence along the light emitting direction of the first laser chip. The volume Bragg grating is arranged between the slow-axis collimator and the coupling lens. The wave stabilization light beam output by the volume Bragg grating is converged into the first optical fiber through the coupling lens.

[0014] As a preferred solution, the chip module includes at least two second laser chips, a spot shaping element located at the output end of the at least two second laser chips, and a beam combining component. The at least two second laser chips use a stabilized wave beam as a seed light to generate at least two pump beams. The at least two pump beams are combined by the beam combining component after the spot shape is adjusted by the spot shaping element.

[0015] As a preferred solution, the chip module further includes a beam focusing component and a second optical fiber which are located at the output end of the beam combining component and are arranged in sequence, and the beam focusing component couples the combined pump beam into the second optical fiber.

[0016] As a preferred solution, a power supply module is also included, and both the first laser chip and the second laser chip are connected to the power supply module.

[0017] As a preferred solution, the wave stabilization module, the transmission device and the chip module are integrated on the same housing substrate.

[0018] According to another aspect of the present invention, a laser device is provided, comprising the high-power stabilized-wave semiconductor laser in any of the above solutions.

[0019] The high-power wave-stabilized semiconductor laser provided by the embodiment of the present invention includes a chip module, a wave-stabilizing module and a transmission device. The output end of the wave-stabilizing module is connected to the first end of the transmission device through an optical fiber, and the output end of the chip module is connected to the second end of the transmission device through an optical fiber. The wave-stabilizing module includes a first laser chip and a volume Bragg grating. The output beam of the first laser chip is modulated by the volume Bragg grating to form a wave-stabilized beam. The wave-stabilized beam is transmitted to the chip module through the first end and the second end of the transmission device, and the wavelength of the wave-stabilized beam is equal to the Bragg wavelength of the volume Bragg grating. The chip module is used to receive the wave-stabilized beam and generate a pump beam after stabilization. After the pump beam is coupled to the optical fiber at the second end of the transmission device, it is output from the third end of the transmission device. The technical solution of the embodiment of the present invention uses an external wave-stabilizing module, and the wave-stabilizing beam generated by the VBG is adjusted in this module as a seed light, which is conducted into the chip module, so that the wavelength characteristics of the output light of each laser chip in the chip module are consistent with the seed light. At the same time, the power density of the additionally arranged wave-stabilizing module irradiated to the surface of the VBG is small, and the probability of the VBG burning is low. Compared with the solution of multiple VBGs, the cost can be effectively reduced.

[0020] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0022] Figure 1 It is a structural schematic diagram of a semiconductor laser in the prior art;

[0023] Figure 2 It is a schematic diagram of the structure of another semiconductor laser in the prior art;

[0024] Figure 3 A structural block diagram of a high-power wave-stabilized semiconductor laser provided by an embodiment of the present invention;

[0025] Figure 4 A schematic diagram of the structure of a high-power wave-stabilized semiconductor laser provided by an embodiment of the present invention;

[0026] Figure 5 A schematic structural diagram of another high-power wave-stabilized semiconductor laser provided by an embodiment of the present invention;

[0027] Figure 6 A schematic diagram of the structure of another high-power wave-stabilized semiconductor laser provided by an embodiment of the present invention;

[0028] Figure 7 A schematic diagram of the structure of a wave stabilization module provided by an embodiment of the present invention;

[0029] Figure 8 A structural block diagram of another high-power wave-stabilized semiconductor laser provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0030] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0031] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0032] Figure 1 is a schematic diagram of the structure of a semiconductor laser in the prior art, referring to Figure 1 The semiconductor laser includes multiple laser diodes 1, multiple fast-axis collimators 2, multiple slow-axis collimators 3, multiple first reflectors 4 (some of the first reflectors are semi-transparent and semi-reflective mirrors), a second reflector 5, a half-wave plate 6, a polarization beam combiner 7, a fast-axis coupling mirror 8, a slow-axis coupling mirror 9, a VBG 10 and an optical fiber 11. Since the VBG 10 is arranged at the very end of the output light path, the VBG 10 will bear the output power of all the laser diodes 1 and there is a risk of burning.

[0033] Figure 2is a schematic diagram of the structure of another semiconductor laser in the prior art, referring to Figure 2 The semiconductor laser comprises a plurality of laser diodes 1, a plurality of fast axis collimators 2, a plurality of slow axis collimators 3, a plurality of first reflectors 4, a second reflector 5, a half-wave plate 6, a polarization beam combiner 7, a fast axis coupling mirror 8, a slow axis coupling mirror 9, two VBGs 10 and an optical fiber 11, and Figure 1 The difference between the structure and the optical path is that, in order to reduce the pressure on the VBG, two VBGs 10 are dispersedly arranged at the front end of the optical path, and the power borne by each VBG 10 is reduced, but the number of VBGs required is increased, and the cost is high. In addition, while the VBG in the prior art achieves wavelength stability, since the VBG is arranged in the output optical path, it will lose the optical energy in the original system.

[0034] In order to solve the above problems, an embodiment of the present invention provides a high-power wave-stabilized semiconductor laser, which uses an external wave-stabilization module, and installs and adjusts the wave-stabilized light beam generated by the VBG in this module as the seed light, which is transmitted into the chip module, so that the wavelength characteristics of the output light of each laser chip in the chip module are consistent with the seed light. At the same time, the power density of the additional wave-stabilization module irradiated to the surface of the VBG is small, and the probability of the VBG burning is low, which can effectively reduce the cost compared with the multi-VBG solution. In addition, compared with the prior art of placing the VBG in the optical path of the chip module to lose light energy, the embodiment of the present invention adopts an external VBG, which does not waste the light energy of the chip module.

[0035] The specific embodiments of the present invention are described below with reference to the accompanying drawings. Figure 3 A structural block diagram of a high-power wave-stabilized semiconductor laser provided by an embodiment of the present invention, referring to Figure 1 The high-power wave-stabilized semiconductor laser provided by the embodiment of the present invention includes a chip module 40, a wave-stabilizing module 20 and a transmission device 30. The output end of the wave-stabilizing module 20 is connected to the first end of the transmission device 30 through an optical fiber, and the output end of the chip module 40 is connected to the second end of the transmission device 30 through an optical fiber; the wave-stabilizing module 20 includes a first laser chip 21 and a volume Bragg grating 22. The output beam of the first laser chip 21 is modulated by the volume Bragg grating 22 to generate a wave-stabilized beam. The wave-stabilized beam is transmitted to the chip module 40 through the first end and the second end of the transmission device 30. The wavelength of the wave-stabilized beam is equal to the Bragg wavelength of the volume Bragg grating 22; the chip module 40 is used to receive the wave-stabilized beam and generate a stabilized pump beam. After the pump beam is coupled to the optical fiber at the second end of the transmission device 30, it is output from the third end of the transmission device 30.

[0036] Figure 4 A schematic diagram of the structure of a high-power wave-stabilized semiconductor laser provided by an embodiment of the present invention, referring to Figure 4Optionally, the transmission device 30 is an optical fiber device, the output end of the wave stabilization module 20 includes a first optical fiber 201, the first optical fiber 201 is connected to the optical fiber a at the first end of the transmission device 30, the output end of the chip module 40 includes a second optical fiber 401, the second optical fiber 401 is connected to the optical fiber b at the second end of the transmission device 30, and the wave stabilization beam is transmitted to the second laser chip ( Figure 4 The transmission device 30 may be a 2-into-1 beam combiner, such as a 2×1 fiber beam combiner with 2 input ends and 1 output end. According to the reversibility of beam transmission, the stabilized beam input into the transmission device 30 by the stabilized module 20 is used as seed light, which is partially transmitted to the chip module 40 to stimulate the second laser chip to amplify the stabilized beam and output laser light of the same wavelength.

[0037] In a specific implementation, optionally, the transmission device 30 includes a 2×1 fiber combiner 31, the optical fiber a at the first input end of the fiber combiner 31 is connected to the first optical fiber 201 at the output end of the wave stabilization module 20, the optical fiber b at the second input end of the fiber combiner 31 is connected to the second optical fiber 401 at the output end of the chip module 40, and the pump beam is output from the optical fiber c at the output end of the fiber combiner 31.

[0038] In another embodiment, the fiber combiner can be replaced by a fiber circulator. Figure 5 A schematic diagram of the structure of another high-power wave-stabilized semiconductor laser provided by an embodiment of the present invention, referring to Figure 5 Optionally, the transmission device 30 includes a fiber circulator 32, a first end d of the fiber circulator 32 is connected to the first optical fiber 201 at the output end of the wave stabilization module 20, a second end e of the fiber circulator 32 is connected to the second optical fiber 401 at the output end of the chip module 40, and the pump beam is output from the third end f of the fiber circulator 40.

[0039] Among them, the fiber circulator can realize bidirectional optical signal transmission on a single optical fiber. The signal transmission direction of the circulator is irreversible, and the optical signal can only be directed from one port to another in one direction at a time. Although the optical signal can be redirected, it must pass through the ports in sequence in one direction. For example, the optical signal of a three-port circulator must go from port 1 to port 2, and then propagate to port 3.

[0040] Figure 6 A schematic diagram of the structure of another high-power wave-stabilized semiconductor laser provided by an embodiment of the present invention, referring to Figure 6 Optionally, the semiconductor laser further includes a mode stripper 60 , the input end of the mode stripper 60 is connected to the third end of the transmission device 30 , and the mode stripper 60 is used to filter out residual cladding light in the optical fiber at the third end of the transmission device 30 .

[0041] It can be understood that the stripper is an optical device that strips off the remaining pump light and high-order mode lasers, which can effectively protect semiconductor lasers and improve the working quality of semiconductor laser applications. It is an important component of high-power continuous fiber semiconductor lasers. The stabilized wave beam emitted by the wave stabilization module 20 with VBG stable wavelength is mainly concentrated in the fiber cladding. The stabilized wave beam is mainly transmitted in the fiber cladding. In addition to being absorbed, part of it will also be reflected. The reflected part is mainly concentrated in the cladding. The stripper 60 can be used to remove the reflected light of the cladding.

[0042] The working process of the high-power wave-stabilized semiconductor laser provided by the embodiment of the present invention is as follows:

[0043] The first step is to power the wave stabilization module with the first laser chip and VBG, and the output light thereof is a signal light with a stable wavelength;

[0044] In the second step, the signal light is introduced into the cladding of the optical fiber of the chip module by a transmission device (such as a 2×1 optical fiber combiner), and finally transmitted into the second laser chip of the chip module;

[0045] In the third step, each second laser chip of the chip module receives the signal light, starts to oscillate, and outputs light consistent with the spectral properties of the signal light. The light output by the second laser chip is mainly in the fiber core;

[0046] In the fourth step, the stripper removes the remaining cladding light.

[0047] Figure 7 A schematic diagram of a wave stabilization module provided in an embodiment of the present invention, referring to Figure 7 Optionally, the wave stabilization module 20 also includes a fast-axis collimator 23, a slow-axis collimator 24, a coupling lens 25 and a first optical fiber 201, which are arranged in sequence along the light emitting direction of the first laser chip 21. The volume Bragg grating 22 is arranged between the slow-axis collimator 24 and the coupling lens 25. The wave stabilization light beam output from the volume Bragg grating 22 is converged into the first optical fiber 201 through the coupling lens 25.

[0048] Among them, due to the waveguide structure of the semiconductor laser, the laser emitted by the chip is usually elliptical, with a relatively large divergence angle in the vertical direction and good beam quality, which is called the "fast axis". The divergence angle in the horizontal direction is relatively small, and the beam quality is poor, which is called the "slow axis". In order to obtain a good coupling effect, the light beams in two directions need to be collimated separately, and the corresponding components are called fast-axis collimators and slow-axis collimators.

[0049] In one embodiment, please continue to refer to Figure 3 The chip module 40 includes at least two second laser chips 41, a spot shaping element at the output end of the second laser chip, and a beam combining component ( Figure 3(not shown), at least two second laser chips 41 use the stabilized wave beam as the seed light to generate at least two pump beams, and the at least two pump beams are combined by the beam combining component after the spot shape is adjusted by the spot shaping element.

[0050] Among them, both the first laser chip 21 and the second laser chip 41 can be semiconductor laser diode chips. In specific implementation, the parameters of the first laser chip 21 and the second laser chip 41 can be set to be the same, or the parameters of the first laser chip 21 and the second laser chip 41 can be set to be different. For example, the output power of the first laser chip 21 is less than the output power of the second laser chip 41. In this embodiment, a low-power stabilized wave beam (seed light) can be generated by the stabilization module 20 to avoid burning the VBG due to excessive energy. The light is transmitted to the chip module 40 by external injection. After receiving the seed light, each second laser chip 41 oscillates and outputs a laser that is consistent with the spectral properties of the seed light. The chip module 40 may include a plurality of second laser chips 41 arranged in an array. The specific setting method can be designed according to actual conditions. For example, in a certain embodiment, the plurality of second laser chips may be similarly arranged. Figure 1 or Figure 2 The arrangement is shown in the manner shown, that is, the plurality of second laser chips are arranged in two rows and multiple columns, the spot shaping element includes a fast-axis collimator and a slow-axis collimator arranged at the output end of each second laser chip, and the beam combining assembly includes a plurality of reflectors and a half-wave plate and a polarization beam combining mirror located at the output end of the plurality of reflectors, and each reflector is arranged corresponding to each slow-axis collimator to reflect the collimated light beam to the half-wave plate, and then the polarization beam combining mirror is used to combine the light beam. In another embodiment, the plurality of second laser chips can be arranged in a row, the spot shaping element includes a fast-axis collimator and a slow-axis collimator arranged at the output end of each second laser chip, and the beam combining assembly includes a plurality of reflectors arranged accordingly, which is not limited in the embodiment of the present invention.

[0051] Figure 8 A structural block diagram of another semiconductor laser provided by an embodiment of the present invention, referring to Figure 8 Optionally, the semiconductor laser further includes a power supply module 70 , and both the first laser chip 21 and the second laser chip 41 are connected to the power supply module 70 .

[0052] Among them, the laser chip is an electroluminescent element, and the power supply module 70 provides electrical energy to the laser chip, which can be converted into a laser signal output. In a specific implementation, optionally, the wave stabilization module 20, the transmission device 30 and the chip module 40 are integrated on the same housing substrate. In an embodiment of the present invention, the chip module 40 also includes a beam focusing component and a second optical fiber located at the output end of the beam combining component and arranged in sequence, and the beam focusing component couples the combined pump beam into the second optical fiber. The beam focusing component can be a coupling lens, and a fast-axis coupling mirror and a slow-axis coupling mirror can also be set according to actual needs. It can be selected according to actual conditions during specific implementation.

[0053] Compared with the existing methods, the high-power wave-stabilized semiconductor laser provided by the embodiment of the present invention has the following advantages:

[0054] 1. Achieve wavelength stability;

[0055] 2. Compared with VBG which loses light energy when placed in the optical path, VBG in this solution does not waste light energy;

[0056] 3. Compared with the traditional multiple VBG solution, the number of VBGs is small, saving costs;

[0057] 4. Compared with the traditional single VBG solution, the possibility of VBG damage is reduced.

[0058] The embodiment of the present invention further provides a laser device, including any one of the high-power wave-stabilized semiconductor lasers provided in the above embodiment. The gain medium in the laser device can be an active optical fiber, a laser crystal, etc., and the laser device can be a fiber laser device, a solid laser device, etc., and can be designed according to actual conditions during specific implementation.

[0059] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A high-power wave-stabilized semiconductor laser, characterized in that: Including chip modules, wave stabilization modules and transmission devices, The output end of the wave stabilization module is connected to the first end of the transmission device through an optical fiber, and the output end of the chip module is connected to the second end of the transmission device through an optical fiber; The wave stabilization module comprises a first laser chip and a volume Bragg grating. The output beam of the first laser chip is modulated by the volume Bragg grating to form a wave stabilization beam. The wave stabilization beam is transmitted to the chip module through the first end and the second end of the transmission device. The wavelength of the wave stabilization beam is equal to the Bragg wavelength of the volume Bragg grating. The chip module is used to receive the stabilized light beam and generate a stabilized pump light beam. After the pump light beam is coupled to the optical fiber at the second end of the transmission device, it is output from the third end of the transmission device.

2. The high-power wave-stabilized semiconductor laser according to claim 1, characterized in that: The transmission device includes a 2×1 fiber combiner, a first input end of the fiber combiner is connected to the output end of the wave stabilization module, a second input end of the fiber combiner is connected to the output end of the chip module, and the pump beam is output from the output end of the fiber combiner.

3. The high-power wave-stabilized semiconductor laser according to claim 1, characterized in that: The transmission device comprises a fiber circulator, a first end of the fiber circulator is connected to the output end of the wave stabilization module, a second end of the fiber circulator is connected to the output end of the chip module, and the pump beam is output from the third end of the fiber circulator.

4. The high-power wave-stabilized semiconductor laser according to claim 2, characterized in that: It also includes a mode stripper, the input end of which is connected to the third end of the transmission device, and the mode stripper is used to filter out residual cladding light in the optical fiber at the third end of the transmission device.

5. The high-power wave-stabilized semiconductor laser according to claim 1, characterized in that: The wave stabilization module also includes a fast-axis collimator, a slow-axis collimator, a coupling lens and a first optical fiber which are sequentially arranged along the light emitting direction of the first laser chip. The volume Bragg grating is arranged between the slow-axis collimator and the coupling lens. The wave stabilization light beam output from the volume Bragg grating is converged into the first optical fiber through the coupling lens.

6. The high-power wave-stabilized semiconductor laser according to claim 1, characterized in that: The chip module includes at least two second laser chips, a spot shaping element located at the output end of the at least two second laser chips, and a beam combining component. The at least two second laser chips use the stabilized wave beam as seed light to generate at least two pump beams. The at least two pump beams are combined by the beam combining component after the spot shape is adjusted by the spot shaping element.

7. The high-power wave-stabilized semiconductor laser according to claim 6, characterized in that: The chip module further comprises a beam focusing component and a second optical fiber which are located at the output end of the beam combining component and are arranged in sequence, and the beam focusing component couples the combined pump beam into the second optical fiber.

8. The high-power wave-stabilized semiconductor laser according to claim 6, characterized in that: It also includes a power supply module, and the first laser chip and the second laser chip are both connected to the power supply module.

9. The high-power wave-stabilized semiconductor laser according to claim 1, characterized in that: The wave stabilization module, the transmission device and the chip module are integrated on the same housing substrate.

10. A laser device, characterized in that: The invention comprises the high-power wave-stabilized semiconductor laser as described in any one of claims 1 to 9.

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