Over-temperature protection circuit for high-voltage driving and integrated chip

Abstract

The invention relates to the technical field of chip internal power supplies, in particular to an over-temperature protection circuit for high-voltage driving and an integrated chip, the circuit comprises a voltage stabilization unit, a voltage stabilization adjustment unit, a temperature detection unit, an amplification unit and a feedback unit, the voltage stabilization unit is connected to the voltage stabilization adjustment unit, and the temperature detection unit is connected to the temperature detection unit. The temperature detection unit and the voltage stabilization adjustment unit are both connected to the amplification unit, and the amplification unit is connected to the feedback unit. The application has the effect of improving applicability and accuracy.

Description

Technical Field

[0001] The present application relates to the technical field of chip internal power supply, and in particular to an over-temperature protection circuit and an integrated chip for high voltage driving. Background Art

[0002] With the development of electronic technology, integrated chips have greatly reduced the size of electronic components, while having the characteristics of low cost and good performance.

[0003] Among them, the temperature of the internal power supply of the chip may be too high, so the temperature detection of the internal power supply of the chip is essential. In the related art, the over-temperature protection circuit is generally set, and the output signal is a step signal, that is, the output high and low levels. This method has a single usage scenario. In addition, in the related art, the over-temperature protection circuit is not integrated with other circuits, that is, the over-temperature protection circuit is set separately, resulting in the over-temperature protection circuit being far away from the test point, resulting in inaccurate over-temperature protection. Summary of the invention

[0004] In order to improve applicability and accuracy, the present application provides an over-temperature protection circuit and an integrated chip for high-voltage driving.

[0005] In a first aspect, the present application provides an over-temperature protection circuit for high voltage driving, which adopts the following technical solution: An over-temperature protection circuit for high-voltage drive includes a voltage stabilizing unit, a voltage stabilizing adjustment unit, a temperature detection unit, an amplifying unit, and a feedback unit. The voltage stabilizing unit is connected to the voltage stabilizing adjustment unit, the temperature detection unit and the voltage stabilizing adjustment unit are both connected to the amplifying unit, and the amplifying unit is connected to the feedback unit.

[0006] By adopting the above technical solution, the voltage stabilizing unit is used to provide a stable voltage value, the voltage stabilizing adjustment unit can adjust the voltage value provided by the voltage stabilizing unit to output a stable reference voltage value to the amplifying unit, and the temperature detection unit can output a linear voltage value based on the temperature change, and then amplify and output the linear output voltage through the amplifying unit. The temperature detection unit can be used to accurately detect the temperature change of the large current MOS tube, and the amplifying unit outputs a linear output voltage. Compared with the output step signal in the related technology, it is convenient for users to use it based on actual usage scenarios and improves applicability. Through the integrated setting of the temperature detection unit and other units, the distance between the temperature detection unit and the point to be measured is reduced, so that the temperature detection is more accurate, and then the over-temperature protection is more accurate.

[0007] Optionally, the voltage stabilizing unit includes a PMOS tube P1 and a voltage stabilizing diode D1, the gate of the PMOS tube P1 is connected to a bias terminal VBP, the source of the PMOS tube P1 is connected to a power supply terminal VCC, the drain of the PMOS tube P1 is connected to the cathode terminal of the voltage stabilizing diode D1, and the anode terminal of the voltage stabilizing diode D1 is connected to the ground terminal.

[0008] Optionally, the voltage regulating adjustment unit includes an NMOS tube N1, an NMOS tube N2, an NMOS tube N3, a resistor R1, a resistor R2, a resistor R3 and a resistor R4, the drain of the NMOS tube N3 is connected to the resistor R5, the other end of the resistor R5 is connected to the drain of the PMOS tube P1, and the gate of the NMOS tube N3 is connected to the control terminal F3. The source of the NMOS tube N3 is connected to the drain of the NMOS tube N2, the gate of the NMOS tube N2 is connected to the control terminal F2, the source of the NMOS tube N2 is connected to the drain of the NMOS tube N1, the gate of the NMOS tube N1 is connected to the control terminal F1, the source of the NMOS tube N1 is connected to the resistor R1, the other end of the resistor R1 is connected to the ground terminal, the source of the NMOS tube N1 is also used to connect the amplification unit, one end of the resistor R4 is connected to the drain of the NMOS tube N3, the other end of the resistor R4 is connected to the source of the NMOS tube N3, one end of the resistor R3 is connected to the drain of the NMOS tube N2, the other end of the resistor R3 is connected to the source of the NMOS tube N2, one end of the resistor R2 is connected to the drain of the NMOS tube N1, and the other end of the resistor R2 is connected to the source of the NMOS tube N1.

[0009] By adopting the above technical solution, a stable voltage value is provided by the voltage stabilizing diode D1, and then different control signals are inputted by the three control terminals to adjust the stable voltage value by the voltage stabilizing adjustment unit. Since different chip over-temperature protection values ​​are discrete, a stable reference voltage value can be obtained by adjusting the control signals of the three control terminals. Maintaining the stability of the reference voltage value can improve the consistency of the over-temperature protection value, that is, maintain the accuracy of temperature detection.

[0010] Optionally, the temperature detection unit includes a PMOS tube P2 and a diode D2, the gate of the PMOS tube P2 is connected to the bias terminal VBP, the source of the PMOS tube P2 is connected to the power supply terminal VCC, the drain of the PMOS tube P2 is connected to the cathode terminal of the diode D2, the anode terminal of the diode D2 is connected to the ground terminal, and the drain of the PMOS tube P2 is also used to connect to the amplification unit.

[0011] By adopting the above technical solution and utilizing the negative temperature characteristic of the diode D2 itself, the temperature detection unit can output a linear voltage.

[0012] Optionally, the amplification unit includes a PMOS tube P3, a PMOS tube P4, a PMOS tube P5, a PMOS tube P6, an NMOS tube N4, an NMOS tube N5, an NMOS tube N6 and a capacitor C1, the gate of the PMOS tube P3 is connected to the bias terminal VBP, the source of the PMOS tube P3 is connected to the power supply terminal VCC, the drain of the PMOS tube P3 is connected to the source of the PMOS tube P5, the gate of the PMOS tube P5 is used to connect to the temperature detection unit, the drain of the PMOS tube P5 is connected to the drain of the NMOS tube N4, the drain and the gate of the NMOS tube N4 are short-circuited, the source of the NMOS tube N4 is connected to the ground terminal, the gate of the NMOS tube N4 is connected to the gate of the NMOS tube N5, and the N The source of the MOS tube N5 is connected to the ground terminal, the drain of the NMOS tube N5 is connected to the drain of the PMOS tube P6, the source of the PMOS tube P6 is connected to the source of the PMOS tube P5, the gate of the PMOS tube P6 is used to connect the voltage regulation adjustment unit, the drain of the NMOS tube N5 is also connected to the gate of the NMOS tube N6, the source of the NMOS tube N6 is connected to the ground terminal, the drain of the NMOS tube N6 is connected to the drain of the PMOS tube P4, the source of the PMOS tube P4 is connected to the power supply terminal VCC, the gate of the PMOS tube P4 is connected to the bias terminal VBP, one end of the capacitor C1 is connected to the gate of the NMOS tube N6, and the other end of the capacitor C1 is connected to the drain of the NMOS tube N6.

[0013] By adopting the above technical solution, the signal output by the temperature unit is amplified.

[0014] Optionally, the feedback unit includes an NMOS tube N7, a resistor R6, a resistor R7 and a resistor R8, the drain of the NMOS tube N7 is connected to the power supply terminal VCC, the gate of the NMOS tube N7 is connected to the drain of the PMOS tube P4, the source of the NMOS tube N7 is connected to the resistor R8, the other end of the resistor R8 is connected to the ground terminal, the source of the NMOS tube N7 is also connected to the output terminal VTO, the source of the NMOS tube N7 is also connected to the resistor R7, the other end of the resistor R7 is connected to the gate of the PMOS tube P5, the resistor R6 is arranged at the gate of the PMOS tube P5, one end of the resistor R6 is used to connect the temperature detection unit, and the other end of the resistor R6 is connected to the gate of the PMOS tube P5.

[0015] In the second aspect, the present application provides a high-voltage driver integrated chip that adopts the following technical solution: A high-voltage drive integrated chip comprises an over-temperature protection circuit for high-voltage drive as described in the first aspect.

[0016] In summary, the present application includes at least one of the following beneficial technical effects: 1. The voltage stabilizing unit is used to provide a stable voltage value. The voltage stabilizing adjustment unit can adjust the voltage value provided by the voltage stabilizing unit to output a stable reference voltage value to the amplifying unit. The temperature detection unit can output a linear voltage value based on the temperature change, and then amplify and output a linear output voltage through the amplifying unit. The temperature detection unit can accurately detect the temperature change of the high-current MOS tube, and the amplifying unit outputs a linear output voltage. Compared with the output step signal in the related technology, it can be convenient for users to use it based on actual usage scenarios, improving applicability; 2. Provide a stable voltage value through the voltage stabilizing diode D1, and then use the three control terminals to input different control signals to adjust the stable voltage value using the voltage stabilizing adjustment unit. Since different chip over-temperature protection values ​​are discrete, a stable reference voltage value can be obtained by adjusting the control signals of the three control terminals. Keeping the reference voltage stable can improve the consistency of the over-temperature protection value, that is, maintain the accuracy of temperature detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a block diagram showing the overall connection of this embodiment.

[0018] Figure 2 is a circuit schematic diagram showing the connection of the devices of this embodiment.

[0019] Figure 3 Schematic diagram showing the temperature-voltage curve of this embodiment.

[0020] Explanation of the accompanying drawings: 1. Voltage stabilizing unit; 2. Voltage stabilizing adjustment unit; 3. Temperature detection unit; 4. Amplifying unit. DETAILED DESCRIPTION

[0021] The following is combined with Figure 1-3 This application is described in further detail.

[0022] The present application embodiment discloses an over-temperature protection circuit for high voltage driving. Figure 1 An over-temperature protection circuit for high-voltage driving includes a voltage stabilizing unit 1, a voltage stabilizing adjustment unit 2, a temperature detection unit 3, an amplifying unit 4, and a feedback unit. The voltage stabilizing unit 1 is connected to the voltage stabilizing adjustment unit 2, the temperature detection unit 3 and the voltage stabilizing adjustment unit 2 are both connected to the amplifying unit 4, and the amplifying unit 4 is connected to the feedback unit.

[0023] Reference Figure 2 The voltage stabilizing unit 1 includes a PMOS tube P1 and a voltage stabilizing diode D1, the gate of the PMOS tube P1 is connected to the bias terminal VBP, the source of the PMOS tube P1 is connected to the power supply terminal VCC, the drain of the PMOS tube P1 is connected to the cathode terminal of the voltage stabilizing diode D1, and the anode terminal of the voltage stabilizing diode D1 is connected to the ground terminal.

[0024] The voltage regulating unit 2 includes NMOS tube N1, NMOS tube N2, NMOS tube N3, resistor R1, resistor R2, resistor R3 and resistor R4. The drain of NMOS tube N3 is connected to resistor R5, and the other end of resistor R5 is connected to the drain of PMOS tube P1. The gate of NMOS tube N3 is connected to control terminal F3. The source of the NMOS tube N3 is connected to the drain of the NMOS tube N2, the gate of the NMOS tube N2 is connected to the control terminal F2, the source of the NMOS tube N2 is connected to the drain of the NMOS tube N1, the gate of the NMOS tube N1 is connected to the control terminal F1, the source of the NMOS tube N1 is connected to the resistor R1, the other end of the resistor R1 is connected to the ground terminal, the source of the NMOS tube N1 is also used to connect the amplification unit 4, one end of the resistor R4 is connected to the drain of the NMOS tube N3, the other end of the resistor R4 is connected to the source of the NMOS tube N3, one end of the resistor R3 is connected to the drain of the NMOS tube N2, the other end of the resistor R3 is connected to the source of the NMOS tube N2, one end of the resistor R2 is connected to the drain of the NMOS tube N1, and the other end of the resistor R2 is connected to the source of the NMOS tube N1.

[0025] The temperature detection unit 3 includes a PMOS tube P2 and a diode D2, the gate of the PMOS tube P2 is connected to the bias terminal VBP, the source of the PMOS tube P2 is connected to the power supply terminal VCC, the drain of the PMOS tube P2 is connected to the cathode terminal of the diode D2, the anode terminal of the diode D2 is connected to the ground terminal, and the drain of the PMOS tube P2 is also used to connect to the amplification unit 4.

[0026] The amplification unit 4 includes a PMOS tube P3, a PMOS tube P4, a PMOS tube P5, a PMOS tube P6, an NMOS tube N4, an NMOS tube N5, an NMOS tube N6 and a capacitor C1. The gate of the PMOS tube P3 is connected to the bias terminal VBP, the source of the PMOS tube P3 is connected to the power supply terminal VCC, the drain of the PMOS tube P3 is connected to the source of the PMOS tube P5, and the gate of the PMOS tube P5 is used to connect to the temperature detection unit 3, that is, the gate of the PMOS tube P5 is connected to the drain of the PMOS tube P2, the drain of the PMOS tube P5 is connected to the drain of the NMOS tube N4, the drain and the gate of the NMOS tube N4 are short-circuited, the source of the NMOS tube N4 is connected to the ground terminal, the gate of the NMOS tube N4 is connected to the gate of the NMOS tube N5, and the gate of the NMOS tube N5 is connected to the ground terminal. The source of the MOS tube N5 is connected to the ground terminal, the drain of the NMOS tube N5 is connected to the drain of the PMOS tube P6, the source of the PMOS tube P6 is connected to the source of the PMOS tube P5, and the gate of the PMOS tube P6 is used to connect to the voltage regulation adjustment unit 2, that is, the gate of the PMOS tube P6 is connected to the source of the NMOS tube N1, the drain of the NMOS tube N5 is also connected to the gate of the NMOS tube N6, the source of the NMOS tube N6 is connected to the ground terminal, the drain of the NMOS tube N6 is connected to the drain of the PMOS tube P4, the source of the PMOS tube P4 is connected to the power supply terminal VCC, the gate of the PMOS tube P4 is connected to the bias terminal VBP, one end of the capacitor C1 is connected to the gate of the NMOS tube N6, and the other end of the capacitor C1 is connected to the drain of the NMOS tube N6.

[0027] Reference Figure 2 The feedback unit includes an NMOS tube N7, a resistor R6, a resistor R7 and a resistor R8. The drain of the NMOS tube N7 is connected to the power supply terminal VCC, the gate of the NMOS tube N7 is connected to the drain of the PMOS tube P4, the source of the NMOS tube N7 is connected to the resistor R8, the other end of the resistor R8 is connected to the ground terminal, the source of the NMOS tube N7 is also connected to the output terminal VTO, the source of the NMOS tube N7 is also connected to the resistor R7, the other end of the resistor R7 is connected to the gate of the PMOS tube P5, the resistor R6 is arranged at the gate of the PMOS tube P5, one end of the resistor R6 is used to connect to the temperature detection unit 3, that is, one end of the resistor R6 is connected to the drain of the PMOS tube P2, and the other end of the resistor R6 is connected to the gate of the PMOS tube P5.

[0028] By providing the feedback unit, the output linear voltage of the output terminal VTO can produce a linear characteristic, that is, when the resistance of the resistor R6 decreases, the slope of the output voltage value increases.

[0029] The power supply terminal VCC provides a 15V voltage.

[0030] The bias terminal VBP is used to connect a bias circuit, that is, to provide a bias voltage for the gates of the PMOS tubes P1, PMOS tubes P2, PMOS tubes P3 and PMOS tubes P4 in the circuit, and can also provide current for each unit.

[0031] When a certain current flows through the PMOS tube P1, a voltage regulator is generated at the voltage regulator diode D1. In this embodiment, a 6V voltage regulator diode is used. By adjusting the signals at the control terminals F1, F2 and F3, a reference voltage value of 0.7V is obtained on the resistor R1. When a certain current flows through the PMOS tube P2, a voltage of 0.7V is generated at the diode D2. Since the diode D2 itself has a negative temperature characteristic, the voltage value of the diode D2 decreases linearly when the temperature rises. Then, the amplification unit is used to make the output terminal VTO output a linear rising voltage. The output voltage curve is as follows: Figure 3 shown.

[0032] Specifically, due to the characteristics of the device itself, it is difficult to achieve exactly the same parameters, which may cause the reference voltage to change, that is, it is difficult to determine that the reference voltage must be 0.7V, so a voltage regulation adjustment circuit is set up, and high level or low level is input through three control terminals respectively, which can generate 8 different paths, that is, realize 8 different adjustments, so that the reference voltage can be as stable as possible at 0.7V, thereby achieving the consistency of the reference voltage.

[0033] The output terminal VTO outputs a linear output voltage. Different voltage values ​​correspond to different over-temperature protection points. Therefore, users can use different output voltages to set over-temperature protection points according to actual temperature requirements.

[0034] The implementation principle of an over-temperature protection circuit for high-voltage drive in an embodiment of the present application is as follows: a voltage stabilizing unit 1 provides a stable voltage so that a voltage stabilizing adjustment unit 2 can adjust to obtain a desired voltage value; a temperature detection unit 3 outputs a linear voltage value that changes with temperature based on external temperature changes; and then, the voltage value is amplified by an amplifying unit 4 so that an output terminal VTO outputs a linear output voltage that changes with temperature.

[0035] Compared with the related art, the reference voltage circuit is simplified, the cost of device use is reduced, and the occupied space is reduced; the voltage regulation adjustment unit is capable of adjusting the voltage regulation value to maintain the consistency of over-temperature protection; the circuit of this embodiment outputs a linear output voltage, while the output in the related art is a step signal, that is, a change in high and low levels is generated at a certain temperature value, and is output in the form of high and low levels. Compared with the related art, the circuit of this embodiment is convenient for users to use in different usage scenarios and select different over-temperature protection values.

[0036] Furthermore, the temperature detection unit is integrated with other units, which reduces the distance between the temperature detection unit and the point to be measured compared to the related art, and can make the detection result more accurate, that is, the over-temperature protection is more accurate.

[0037] The embodiment of the present application also discloses a high-voltage drive integrated chip. The high-voltage drive integrated chip includes an over-temperature protection circuit for high-voltage drive disclosed in the above embodiment.

[0038] By improving the over-temperature protection circuit for high-voltage drive, the reference circuit is simplified, the space occupied by the circuit is reduced, and the purpose of reducing the volume of the integrated chip is achieved. In addition, the above circuit is integrated in the chip, and the above circuit is combined with a large-current MOS tube for packaging, so that the temperature detection unit can be closer to the large-current MOS tube, that is, the temperature change can be detected more accurately, that is, the over-temperature protection detection is more accurate.

[0039] The above are all preferred embodiments of the present application, and the protection scope of the present application is not limited thereto. Therefore, any equivalent changes made according to the structure, shape, and principle of the present application should be included in the protection scope of the present application.

Claims

1. An over-temperature protection circuit for high voltage driving, characterized in that: The invention comprises a voltage stabilizing unit (1), a voltage stabilizing adjustment unit (2), a temperature detection unit (3), an amplifying unit (4), and a feedback unit, wherein the voltage stabilizing unit (1) is connected to the voltage stabilizing adjustment unit (2), the temperature detection unit (3) and the voltage stabilizing adjustment unit (2) are both connected to the amplifying unit (4), and the amplifying unit (4) is connected to the feedback unit.

2. The over-temperature protection circuit for high voltage driving according to claim 1, characterized in that: The voltage stabilizing unit (1) comprises a PMOS tube P1 and a voltage stabilizing diode D1, wherein the gate of the PMOS tube P1 is connected to a bias terminal VBP, the source of the PMOS tube P1 is connected to a power supply terminal VCC, the drain of the PMOS tube P1 is connected to a cathode terminal of the voltage stabilizing diode D1, and the anode terminal of the voltage stabilizing diode D1 is connected to a ground terminal.

3. The over-temperature protection circuit for high voltage driving according to claim 2, characterized in that: The voltage regulating unit (2) comprises an NMOS tube N1, an NMOS tube N2, an NMOS tube N3, a resistor R1, a resistor R2, a resistor R3 and a resistor R4, the drain of the NMOS tube N3 is connected to the resistor R5, the other end of the resistor R5 is connected to the drain of the PMOS tube P1, the gate of the NMOS tube N3 is connected to the control terminal F3, The source of the NMOS tube N3 is connected to the drain of the NMOS tube N2, the gate of the NMOS tube N2 is connected to the control terminal F2, the source of the NMOS tube N2 is connected to the drain of the NMOS tube N1, the gate of the NMOS tube N1 is connected to the control terminal F1, the source of the NMOS tube N1 is connected to the resistor R1, the other end of the resistor R1 is connected to the ground terminal, the source of the NMOS tube N1 is also used to connect the amplification unit (4), one end of the resistor R4 is connected to the drain of the NMOS tube N3, the other end of the resistor R4 is connected to the source of the NMOS tube N3, one end of the resistor R3 is connected to the drain of the NMOS tube N2, the other end of the resistor R3 is connected to the source of the NMOS tube N2, one end of the resistor R2 is connected to the drain of the NMOS tube N1, and the other end of the resistor R2 is connected to the source of the NMOS tube N1.

4. The over-temperature protection circuit for high voltage driving according to claim 2, characterized in that: The temperature detection unit (3) comprises a PMOS tube P2 and a diode D2, wherein the gate of the PMOS tube P2 is connected to the bias terminal VBP, the source of the PMOS tube P2 is connected to the power supply terminal VCC, the drain of the PMOS tube P2 is connected to the cathode terminal of the diode D2, the anode terminal of the diode D2 is connected to the ground terminal, and the drain of the PMOS tube P2 is also used to connect to the amplification unit (4).

5. The over-temperature protection circuit for high voltage driving according to claim 2, characterized in that: The amplifying unit (4) comprises a PMOS tube P3, a PMOS tube P4, a PMOS tube P5, a PMOS tube P6, an NMOS tube N4, an NMOS tube N5, an NMOS tube N6 and a capacitor C1, the gate of the PMOS tube P3 is connected to the bias terminal VBP, the source of the PMOS tube P3 is connected to the power supply terminal VCC, the drain of the PMOS tube P3 is connected to the source of the PMOS tube P5, the gate of the PMOS tube P5 is used to connect to the temperature detection unit (3), the drain of the PMOS tube P5 is connected to the drain of the NMOS tube N4, the drain and the gate of the NMOS tube N4 are short-circuited, the source of the NMOS tube N4 is connected to the ground terminal, the gate of the NMOS tube N4 is connected to the gate of the NMOS tube N5, and the NMOS tube N5 is connected to the ground terminal. The source of the OS transistor N5 is connected to the ground terminal, the drain of the NMOS transistor N5 is connected to the drain of the PMOS transistor P6, the source of the PMOS transistor P6 is connected to the source of the PMOS transistor P5, the gate of the PMOS transistor P6 is used to connect to the voltage regulation adjustment unit (2), the drain of the NMOS transistor N5 is also connected to the gate of the NMOS transistor N6, the source of the NMOS transistor N6 is connected to the ground terminal, the drain of the NMOS transistor N6 is connected to the drain of the PMOS transistor P4, the source of the PMOS transistor P4 is connected to the power supply terminal VCC, the gate of the PMOS transistor P4 is connected to the bias terminal VBP, one end of the capacitor C1 is connected to the gate of the NMOS transistor N6, and the other end of the capacitor C1 is connected to the drain of the NMOS transistor N6.

6. The over-temperature protection circuit for high voltage driving according to claim 5, characterized in that: The feedback unit comprises an NMOS tube N7, a resistor R6, a resistor R7 and a resistor R8, wherein the drain of the NMOS tube N7 is connected to the power supply terminal VCC, the gate of the NMOS tube N7 is connected to the drain of the PMOS tube P4, the source of the NMOS tube N7 is connected to the resistor R8, the other end of the resistor R8 is connected to the ground terminal, the source of the NMOS tube N7 is also connected to the output terminal VTO, the source of the NMOS tube N7 is also connected to the resistor R7, the other end of the resistor R7 is connected to the gate of the PMOS tube P5, the resistor R6 is arranged at the gate of the PMOS tube P5, one end of the resistor R6 is used to connect to the temperature detection unit (3), and the other end of the resistor R6 is connected to the gate of the PMOS tube P5.

7. A high voltage driver integrated chip, characterized in that: It comprises an over-temperature protection circuit for high voltage driving as described in any one of claims 1 to 6.

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