Power module bridge, method for producing same, and use in a vehicle

Abstract

The invention relates to a power module bridge comprising: one or more power modules having one or more circuit carriers comprising at least three material layers, an intermediate circuit carrier layer comprising an insulating material, a first and a second outer circuit carrier layer comprising an electrically conductive material, the outer layers being configured as one or more conductor structures, one or more bonding wires, comprising a connection from the semiconductor switch to the semiconductor switch and from the semiconductor switch to the press-in pin, and one or more semiconductor switches comprising a first semiconductor layer and a second semiconductor layer; a cooling surface; a frame having lateral boundaries and having an upwardly and / or downwardly exposed region, the volume surrounded by the frame being filled with a gel; one or more connecting elements; the one or more circuit carriers, the one or more first semiconductor layers and the one or more second semiconductor layers are connected to one another by means of a sintered connection. The invention also relates to a method for producing a power module bridge and to the use of a power module bridge in a vehicle.

Description

Technical Field

[0001] The invention relates to a power module bridge, in particular a power module bridge for converting direct current into alternating current, for example a power module B6 bridge. The invention also relates to one or more power modules without a molded body and without a flexible printed circuit board (Flex-PCB) and a frame with injection-molded press-in pins, as well as the integration of the power modules and the frame into a power module bridge and the gelling of one or more power modules in the power module bridge. Background Art

[0002] In the prior art, power modules are additionally molded, which are installed, for example, in a power module bridge. During molding, the power module is embedded in a solid housing, which is made, for example, of plastic (molded mass). The molded mass serves to encase and protect the interior of the power module. However, this encasement of the power module by the molded mass is not particularly tear-resistant. In addition, the power module usually contains a flexible printed circuit board, which serves as a connection between the power module and the gate printed circuit board.

[0003] DE 10 2021 202336A1 relates to a circuit component, which has a circuit carrier and has an at least partially flexible connecting element connected to the circuit carrier at least in a contact area, on which electrical and / or electronic structural elements of the circuit are arranged, and the connecting element is constructed for forming electrical contacts with the circuit, wherein the connecting element is a flexible printed circuit board foil having multiple layers, which is arranged at least almost parallel to the plane of the circuit carrier in the contact area with a first section and is connected to the circuit carrier, wherein a flexible second section is adjacent to the first section on the side facing away from the circuit carrier, the second section protruding from the plane of the circuit carrier, and at least one longitudinal gap is constructed in the second section, which is parallel to the longitudinal direction of the second section.

[0004] DE 11 2017 004 390 T5 relates to a power module, which comprises the following: an insulating substrate having a front side on which a power semiconductor is mounted; a base plate connected to the rear side of the insulating substrate; a housing mounted on the base plate and surrounding the insulating substrate; a cover mounted on the housing and defining a sealing area; and a silicone gel used as a filling element and filling the entire sealing area and having an internal stress, which serves as a compressive stress; a cover that is fastened to the housing and forms a sealed area; and a silicone gel used as a filling material and filling the entire sealing area and having an inherent stress, which serves as a compressive stress. Summary of the invention

[0005] According to the present invention, a power module bridge according to a first aspect is disclosed, such as a power module B2 bridge or a power module B6 bridge, the power module bridge comprising:

[0006] One or more power modules, wherein the one or more power modules have:

[0007] i. one or more circuit carriers, the circuit carrier comprising at least three material layers, wherein the middle circuit carrier layer comprises an insulating material, and the first outer circuit carrier layer and the second outer circuit carrier layer comprise an electrically conductive material, wherein the outer layers are designed as one or more conductor structures,

[0008] ii. one or more bonding wires, wherein the bonding wires include connections from semiconductor switch to semiconductor switch and from semiconductor switch to press-in pins,

[0009] iii. one or more semiconductor switches, wherein the semiconductor switch comprises a first semiconductor layer and a second semiconductor layer,

[0010] Cooling surface,

[0011] a frame having lateral boundaries and having regions which are exposed upward and / or downward, wherein the volume surrounded by the frame is filled with gel,

[0012] One or more connection elements and

[0013] One or more press-fit pins,

[0014] In this case, one or more circuit carriers, one or more first semiconductor layers and one or more second semiconductor layers are connected to one another via a sintered connection.

[0015] The solution according to the invention shows a power module bridge. A power module bridge is an electronic circuit in which power electronics, such as power modules, are used. Power module bridges are used in various applications, such as motor control devices, converter circuits, switch network components and power inverters. The solution according to the invention is particularly suitable for use in power inverters in electric vehicles, for example. In this case, the power inverter converts direct current (DC) into alternating current (AC).

[0016] The circuit carrier is a component of the power module. The circuit carrier can include, for example, a plurality of material layers, wherein, for example, the outer layer includes a conductive layer and the inner layer includes a non-conductive material. The conductive layer can be used, for example, to electrically connect different power electronic components. In addition, effective thermal management of the power electronic device can be achieved, for example, by the integration of the non-conductive layer. By integrating the conductive layer and the non-conductive layer, a heat dissipation path for conducting heat from the power component can be achieved, for example. For example, the outer layer of the circuit carrier can be configured as a conductor structure, wherein the number and shape of the conductor structure can be different depending on the power module. The power structure includes a conductive material, which is applied to an insulating circuit carrier and is used to achieve a current flow between the components and ensure efficient energy transmission.

[0017] A semiconductor switch within the meaning of the present invention comprises a first semiconductor layer and a second semiconductor layer.

[0018] Another component of the power module bridge proposed according to the invention is a cooling surface. The cooling surface is used to dissipate excess heat generated during the operation of one or more power modules. Among other things, the cooling surface in the sense of the invention fulfills the functions of heat dissipation, heat distribution, temperature control, long-term stability and for preventing thermal failure. For example, the cooling surface can be made of a metal with high thermal conductivity, such as aluminum or copper, in order to dissipate heat from one or more heat-generating power modules.

[0019] The frame is another component of the power module bridge. According to the invention, the frame comprises injection-molded press-in pins. Press-in pins are to be understood as special contact pins for establishing a permanent electronic connection between an electronic component and a printed circuit board, such as a power module. By using press-in pins, conventional solder connections can be bypassed, for example. By connecting with press-in pins, a stable and reliable connection of electronic components can be achieved.

[0020] The solution according to the invention achieves a particularly advantageous design of a power module bridge, wherein the power modules installed in the power module bridge are not encased by a molded mass as in other designs realized according to the prior art, but are gel-cast without such an additional encapsulation.

[0021] In one embodiment of the power module bridge according to the invention, it is provided that one or more power modules are positioned within the frame.

[0022] In another extension of the power module bridge according to the invention, it is characterized in that at least one first outer circuit carrier layer comprises one or more conductor structures, wherein the conductor structures are constructed in such a way that they have a symmetrical arrangement and / or shape, which is mirror-symmetrical with respect to a center line of the circuit carrier layer.

[0023] For example, the first outer circuit carrier layer can be constructed as a symmetrical connection on a T+ path (T-Pluspfad) and a symmetrical connection on a phase path. The T+ path is, for example, a conductor structure that has a T-shaped structure and is responsible for, for example, dividing or combining currents between different branches within the power module. The phase path is a structure consisting of one and / or a plurality of conductor structures, which includes all important relevant components and connections, for example for accurately analyzing, controlling or maintaining the phase relationship between the input current and the output current. The symmetrical connection is, for example, a symmetrical current path.

[0024] Symmetrical current paths are distinguished, for example, by the fact that the current is evenly distributed over different conductor structures of power modules and / or power components (eg semiconductor switches) on the circuit carrier.

[0025] For example, symmetrical current paths can be achieved by a symmetrical arrangement of conductor structures, wherein conductor structures of identical pairs of lengths are arranged in parallel and at a defined distance from one another and have identical electrical properties and an arrangement of semiconductor switches.

[0026] By symmetrically arranging one or more conductor structures, for example, a uniform loading of semiconductor switches can be achieved, which are sintered to the conductor structure, for example. In addition, in the event of a short circuit, the received energy can be uniformly received by all semiconductor switches, whereby, for example, the vehicle can be safely disconnected from the current path in order to protect other components of the vehicle.

[0027] In an advantageous embodiment of the power module bridge proposed according to the invention, a power module bridge is proposed in which the bonding wires which produce the connection from semiconductor switch to semiconductor switch comprise a copper material.

[0028] In one embodiment of the power module bridge according to the invention, it is provided that the bonding wires which produce the connection from the semiconductor switches to the press-in pins are produced from an aluminum material.

[0029] In a development of the power module bridge proposed according to the invention, a power module bridge is proposed, wherein the frame has a variable frame height, wherein the variable frame height is 12 mm, preferably 2 mm to 7 mm, particularly preferably 4 mm to 5 mm.

[0030] According to the invention, a variable frame height is proposed, wherein the frame height depends on the height of the power module inserted into the frame, since the frame height forms a surrounding volume for the gel to be filled in. According to the proposed solution, the frame height is higher than the power module and the components connected to the power module, such as bonding wires and semiconductor circuits.

[0031] In a development of the power module bridge according to the invention, a power module bridge is provided in which the volume surrounded by the frame is filled with gel in such a way that one or more power modules are completely covered by the gel.

[0032] The enclosed volume of the frame refers to the area of ​​the frame that is confined. The enclosed volume of the frame includes the space confined by the outer dimensions of the frame, including the surface of the power module, connecting elements, bonding wires and other electronic components of the power module. The enclosed volume includes at least one open side.

[0033] In a development of the power module bridge according to the invention, a power module bridge is provided, in which the gel is a silicone gel.

[0034] Silicone gel is a semi-solid material comprising a silicone polymer network suspended in a liquid or viscous medium. In the context of the use of the power module bridge according to the invention, silicone gel has excellent temperature resistance, which tolerates thermal stresses at increased temperatures very well without damaging the structural strength or deforming. In particular, compared to the molded mass, the silicone gel has high elasticity and flexibility and is therefore able to absorb and distribute thermal stresses without tearing or forming cracks. In addition, silicone gel has a low thermal conductivity, which improves the insulation and limitation of local temperature differences.

[0035] According to the invention, a method for producing a power module bridge is provided, which comprises one or more power modules, a cooling surface, a frame, injection-molded press-in pins, a gel and one or more connecting elements according to one of the above-mentioned embodiments of the power module bridge according to the invention, wherein the method comprises the following steps:

[0036] I. Provide one or more power modules,

[0037] II. fastening the one or more power modules to the cooling surface,

[0038] III. Applying a frame including press-fit pins on a cooling surface surrounding one or more power modules,

[0039] IV. Connect one or more semiconductor switches with one or more press-in pins,

[0040] V. Mounting one or more connection elements on one or more power modules, wherein:

[0041] The one or more connecting elements are mounted in such a way that each connecting element is fastened above and / or to the frame,

[0042] VI. Fill the surrounded area of ​​the frame with gel.

[0043] The proposed method makes it possible to integrate a power module bridge into various embodiments, for example electric vehicles. In addition, a particularly advantageous design of a power module bridge is achieved by the method, wherein the power module bridge is designed in such a way that the thermomechanical stresses of the components of the power module bridge are reduced by not encapsulating the power modules by means of a molding mass and by gelling the electronic components located in the frame. This reduces, for example, the occurrence of material aging and / or crack formation, which leads to a longer service life of the power module bridge. In addition, for example, by targeted use of cooling measures, the temperature differences that occur can be reduced, which leads to an improvement in the structural integrity and service life.

[0044] In addition, the method enables a particularly advantageous construction of a power module bridge, wherein the power module bridge is designed in such a way that mechanical stability is present when a flexible printed circuit board of the power module is omitted. For example, a flexible printed circuit board is more susceptible to mechanical loads and may become loose or damaged over time. In addition, the current that can be transmitted via the press-in pins is higher than the current that can be transmitted via the flexible printed circuit board. In addition, the press-in pins can be assembled simply and cost-effectively, while the flexible printed circuit board is more specifically distinguished by the disadvantageous and laborious manufacturing process. In addition, compared with the flexible printed circuit board, the press-in pins provide a durable and reliable electrical connection. Compared with the flexible printed circuit board, in the case of which wear phenomena may occur due to the flexibility of the structural group, fewer failures due to temperature changes or repeated movements occur.

[0045] For example, the method according to the invention is particularly well suited for efficient heat removal, because the gel mass has good thermal properties, which enable efficient heat removal of the encapsulated components. Thus, the operating temperature of the power module bridge can be optimally maintained, for example. In addition, the application of the gel provides an effective protective layer for the encapsulated power module components to prevent harmful environmental influences, such as moisture, dust, dirt or chemicals. In addition, the gel mass can have an impact damping and vibration damping effect, in that the gel mass acts like a filler and protects the encapsulated power module components from mechanical loads. This is particularly advantageous in applications where electronic components are subjected to vibrations or shocks, such as in the automotive industry. Compared with rigid encapsulation materials, the gel mass also provides higher flexibility and adaptability to the shape and size of the encapsulated power module components. In addition, it is more cost-effective to use the gel mass instead of the rigid encapsulation due to the smaller material requirement and less laborious processing steps.

[0046] In an advantageous development of the method according to the invention for producing a power module bridge, it is provided that the frame is fastened to the cooling surface by adhesive bonding or welding.

[0047] In another advantageous embodiment of the method according to the invention for producing a power module bridge, it is provided that one or more power modules are provided, wherein the providing comprises producing the power modules, wherein the producing comprises at least the following steps:

[0048] I. Providing a circuit carrier according to the invention,

[0049] II. applying one or more first semiconductor layers to a circuit carrier, wherein the applying comprises connecting by sintering;

[0050] III. applying one or more second semiconductor layers to the first semiconductor layer, wherein the applying comprises a connection by sintering,

[0051] IV. Establish connections between semiconductor switches through bonding wires.

[0052] In a further advantageous embodiment of the method according to the invention for producing a power module bridge, it is provided that the frame is fastened to the cooling surface by adhesive bonding or welding.

[0053] In a further advantageous embodiment of the method according to the invention for producing a power module bridge, it is provided that the signal connection is effected via press-in pins.

[0054] The proposed signal connection is a connection technology in which metal pins (also called press-in pins) are inserted into recesses suitable for this purpose in the components to be connected, such as gates, sources and temperature sensors. By pressing in the press-in pins, a mechanically secure plug connection is achieved between the individual components. At the same time, a trouble-free and reliable electrical connection is achieved.

[0055] According to the invention, a use according to a third aspect for producing a power module bridge in a vehicle is disclosed, wherein the power module bridge is used for current conversion from direct current to alternating current.

[0056] Advantages of the present invention

[0057] Advantageously, the solution according to the invention is distinguished by the use of press-in pins, which make it possible to carry out a fast and precise connection and disconnection between the electronic component and the power module.

[0058] The solution according to the invention is distinguished, among other things, by a simple method which enables integration into existing power module bridges without modifying the interfaces, wherein the necessary molding and application of a flexible printed circuit board is omitted. Furthermore, in the solution according to the invention, a connection circuit board (DCB) is omitted, which ensures cost savings. By omitting casting (molding) and using a gel to protect the power module in the frame, mechanical and thermal stresses on the power electronics of the power module are minimized and the occurrence of cracks or the formation of cracks is avoided.

[0059] Another advantage of the solution according to the invention is that, in contrast to the use of flexible printed circuit boards, press-in pins form a more robust mechanical connection. This enables a firm and permanent anchoring between the power electronic components to be connected, which anchoring withstands mechanical loads such as vibrations, shocks and / or temperature fluctuations. In addition, in the widely used solution with press-in pins, a high resistance is achieved. Long-term mechanical stability and durability are thereby ensured. In addition, a lower thermal load is applied to the bridges of the power module, since the press-in technique does not require welding, for example, and the risk of damaging or deforming the components due to thermal influences during the joining process is thus reduced to a minimum.

[0060] Another advantage of the solution according to the invention is the high workability achieved by using press-in pins. Compared to conventional methods (such as solder connections), this solution is distinguished by a larger contact surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0061] Embodiments of the present invention are explained in more detail with reference to the drawings and the following description.

[0062] The accompanying drawings show:

[0063] Figure 1 shows a schematic diagram of a circuit carrier having a first semiconductor layer,

[0064] Figure 2 shows a schematic diagram of a circuit carrier having a first semiconductor layer and a second semiconductor layer,

[0065] Figure 3 shows a schematic diagram of a circuit carrier having semiconductor switches and bonding wires,

[0066] Figure 4 shows a schematic top view of a cooling surface with a plurality of power modules,

[0067] Figure 5 A schematic diagram showing a power module bridge,

[0068] Figure 6 A schematic diagram showing a power module bridge with connecting elements,

[0069] Figure 7 A schematic diagram shows a method for producing a power module bridge. DETAILED DESCRIPTION

[0070] In the following description of embodiments of the invention, identical or similar elements are denoted by the same reference numerals, wherein a repeated description of these elements is omitted in individual cases. The figures merely schematically illustrate the subject matter of the invention.

[0071] In accordance with Figure 1 In the schematic diagram of FIG. 1 , the exemplary embodiment comprises a circuit carrier 102 according to the invention, which comprises a first outer circuit carrier layer 110. Figure 1 The circuit carrier 102 comprises a first conductor structure 104, a second conductor structure 105, a third conductor structure 106 and a fourth conductor structure 107, wherein all conductor structures 104, 105, 106 and 107 have a conductor shape. Figure 1 , eight first semiconductor layers 108 are shown. Here, two first semiconductor layers 108 are shown on the first conductor structure 104, and two first semiconductor layers 108 are shown on the third conductor structure 106. In addition, four first semiconductor layers 108 are shown on the fourth conductor structure 107. Figure 1 , a center line 112 is shown which shows a subdivision of the circuit carrier 102 in the middle or serves as an axis of symmetry for the circuit carrier 102 and the first outer circuit carrier layer 110 .

[0072] In accordance with Figure 2In the schematic diagram of FIG. 1 , the exemplary embodiment comprises a circuit carrier 102 according to the invention, which comprises a first outer circuit carrier layer 110. Figure 1 The circuit carrier 102 comprises a first conductor structure 104, a second conductor structure 105, a third conductor structure 106 and a fourth conductor structure 107, wherein all conductor structures 104, 105, 106 and 107 have a conductor shape. Figure 2 1 and 2 show eight first semiconductor layers 108 and eight second semiconductor layers 202. Here, two first semiconductor layers 108 and two second semiconductor layers 202 are shown on the first conductor structure 104, and two first semiconductor layers 108 and two second semiconductor layers 202 are shown on the third conductor structure 106. Another four first semiconductor layers 108 and four second semiconductor layers 202 are shown on the fourth conductor structure 107. In addition, Figure 2 , a center line 112 is shown, which shows a subdivision of the circuit carrier 102 in the middle position or serves as an axis of symmetry for the circuit carrier 102 and the first outer circuit carrier layer 110. Figure 2 In FIG. , two line segments X, Y are also plotted, wherein the line segment X corresponds to a symmetrical connection on the T+ path and the line segment Y corresponds to a symmetrical connection on the phase path.

[0073] A symmetrical connection corresponds, for example, to symmetrical current paths which lead to a uniform loading of the semiconductor switch (for example the chip).

[0074] In accordance with Figure 3 In the schematic diagram of FIG. 1 , the exemplary embodiment comprises a circuit carrier 300 according to the invention, which comprises a first outer circuit carrier layer 110. Figure 3 The power module 300 comprises a circuit carrier 102, a first conductor structure 104, a second conductor structure 105, a third conductor structure 106 and a fourth conductor structure 107, wherein all conductor structures 104, 105, 106 and 107 have a conductor shape. Figure 2 , eight first semiconductor layers 108 and eight second semiconductor layers 202 are shown. Here, two first semiconductor layers 108 and two second semiconductor layers 202 are shown on the first conductor structure 104, and two first semiconductor layers 108 and two second semiconductor layers 202 are shown on the third conductor structure 106. Another four first semiconductor layers 108 and four second semiconductor layers 202 are shown on the fourth conductor structure 107. In addition, Figure 3The semiconductor switches 306 are connected via bonding wires 302. The semiconductor switches 306 of the first conductor structure 104 and the third conductor structure 106 are connected to each other via four bonding wires 302 and to the fourth conductor structure 107 in the region 304. The semiconductor switches 306 located in the same first conductor structure 104 and the same third conductor structure 106 are connected to each other via bonding wires 302. The semiconductor switches 306 on the fourth conductor structure 107 are connected to each other via four bonding wires 302 and to the second conductor structure 105 in the region 304, and the adjacent semiconductor switches 306 on the fourth conductor structure 107 are connected to each other via bonding wires 302. In addition, Figure 3 , a center line 112 is shown which shows a subdivision of the circuit carrier 102 in the middle or serves as an axis of symmetry for the circuit carrier 102 and the first outer circuit carrier layer 110 .

[0075] For example, the bonding wire has a material containing copper in order to ensure efficient heat dissipation between the semiconductor switches 306 in the power module 300. The bonding wire 302 can be fastened to the semiconductor switch 306, for example, by ball-wedge bonding, wherein the bonding wire 302 is melted into a ball at one end by a high current pulse and fastened to the semiconductor switch 306.

[0076] Figure 4 Schematic diagram of three power modules 300 fastened to the cooling surface 402 is shown. The three power modules 300 are arranged side by side in parallel, so that the fourth conductor structures 107 of the corresponding power modules 300 point in the same direction. In addition, Figure 4 A region 304 is shown which has a connection between semiconductor switches 306 of the conductor structures 104 , 106 and 107 via a bonding wire 302 on the second conductor structure 105 and the fourth conductor structure 107 .

[0077] For example, the power module 300 may be fastened to the cooling surface 402 by a material-locking connection, such as adhesive bonding. Alternatively, the power module 300 may be fastened to the cooling surface 402 by welding.

[0078] Figure 5 Schematic diagram of three power modules 300 is shown, which are positioned in a frame 504, which is fastened to a cooling plate 402. The frame 504 is composed of plastic, for example. In addition, the frame 504 includes press-in pins 502 which are encapsulated by injection molding. Figure 5 , the frame 504 includes a surrounded volume that is filled with gel.

[0079] For example, the enclosed volume can be influenced by the dimensions of the frame 504, for example by determining the length, width, and depth dimensions of the power module 300 to be set up in the frame. In particular, the frame 504 has a frame height that is greater than the total height of the power module 300 and its electronic components (e.g., bonding wires 302).

[0080] For example, the frame 504 can be fastened to the cooling surface 402 at any desired position, wherein the position can be varied depending on the requirements of the respective application, for example, the application in an electric vehicle. For example, the frame 504 is fastened to the cooling surface 402 in a materially bonded manner. Depending on the size and shape of the frame 504, on the mechanical stresses, on the required stability and on the assembly process, the assembly variants can be adapted.

[0081] The thickness of frame 504 may also vary depending on the requirements of the application.

[0082] Figure 6 4 shows a schematic diagram of a power module bridge 600 having three power modules 300 which are positioned in a frame 504 and fastened to a cooling plate 402. Figure 6 The power module bridge 600 includes a connecting element 602. For example, the frame 504 is made of plastic. In addition, the frame 504 includes press-in pins 502 which are encapsulated by injection molding. The press-in pins 502 are connected to the semiconductor switch 306 via the bonding wires 302. The bonding wires 302 have an aluminum material. Figure 5 , the frame 504 includes a surrounded volume that is filled with gel.

[0083] like Figure 7 As shown in , the illustrated embodiment of the method 700 for producing a power module bridge 600 according to the invention comprises six method steps, wherein the method step of providing 702 one or more power modules 300 has a sequence of four further steps. Therein, the first step is characterized in that providing 702 one or more power modules 300 is a completion 714 of the power module. Therein, the first step has the provision 716 of a circuit carrier 102. In a second step, one or more first semiconductor layers 108 are applied 718 to the circuit carrier 102, wherein the application 718 comprises a connection by sintering. In a third step, one or more second semiconductor layers 202 are applied 720 to the first semiconductor 108, wherein the application 720 comprises a connection by sintering. And the last fourth step of production 714 comprises establishing a connection 722 between semiconductor switches 306 by means of bonding wires 302.

[0084] Additionally, method 700 includes Figure 7, starting with providing 702 one or more power modules 300, then fastening 704 the one or more power modules 300 to the cooling surface 402, and then applying 706 a frame 504 including press-in pins 502 to the cooling surface 402 surrounding the one or more power modules 300. Next, one or more semiconductor switches 306 are connected 708 to the one or more press-in pins 502. In addition, the method 700 includes mounting 710 one or more connecting elements 602 on the one or more power modules 300, wherein the one or more connecting elements 602 are mounted in such a way that each connecting element 602 is fastened above and / or to the frame 504; finally, a last step is included, which includes filling 712 the surrounded area of ​​the frame 504 with gel.

[0085] Alternatively, the frame 504 may be mounted 706 on the cooling surface 402 before fastening 704 the one or more power modules 300 to the cooling surface 402 .

[0086] The invention is not limited to the embodiments described herein and the aspects emphasized therein. On the contrary, numerous modifications within the scope of a person skilled in the art can be realized within the scope given by the claims.

Claims

1. A power module bridge (600), the power module bridge comprising: - one or more power modules (300), wherein the one or more power modules (300) have: i. one or more circuit carriers (102), the circuit carrier comprising at least three material layers, wherein the middle circuit carrier layer comprises an insulating material, and the first outer circuit carrier layer and the second outer circuit carrier layer comprise an electrically conductive material, wherein the outer layers are configured as one or more conductor structures (104, 105, 106, 107), ii. one or more bonding wires (302), wherein the bonding wires (302) include connections from semiconductor switch (306) to semiconductor switch (306) and from semiconductor switch (306) to press-in pins (502), iii. one or more semiconductor switches (306), wherein the semiconductor switch (306) comprises a first semiconductor layer (108) and a second semiconductor layer (202), - a cooling surface (402), a frame (504) having lateral boundaries and having regions which are exposed upward and / or downward, wherein the volume surrounded by the frame (504) is filled with gel, - one or more connecting elements (602) and - one or more press-in pins (502), One or more circuit carriers (102), one or more first semiconductor layers (108) and one or more second semiconductor layers (202) are connected to one another via a sintered connection.

2. The power module bridge (600) according to claim 1, wherein: The one or more power modules (300) are positioned within a frame (504).

3. The power module bridge (600) according to any one of the preceding claims, wherein: At least one first outer circuit carrier layer (110) comprises one or more conductor structures (104, 105, 106, 107), wherein the conductor structures (104, 105, 106, 107) are designed in such a way that they have a symmetrical arrangement and / or shape, which is mirror-symmetrical with respect to a center line (112) of the circuit carrier layer (110).

4. The power module bridge (600) according to any one of the preceding claims, wherein: The bonding wire (302) comprising the connection from semiconductor switch (306) to semiconductor switch (306) comprises a copper material.

5. The power module bridge (600) according to any one of the preceding claims, wherein: The bonding wire (302) comprising the connection from the semiconductor switch (306) to the press-in pin (306) comprises an aluminum material.

6. The power module bridge (600) according to any one of the preceding claims, wherein: The frame ( 504 ) has a variable frame height, wherein the variable frame height is 12 mm, preferably between 2 mm and 7 mm, particularly preferably between 4 mm and 5 mm.

7. The power module bridge (600) according to any one of the preceding claims, wherein: The volume surrounded by the frame (504) is filled with gel in such a way that one or more power modules (300) are completely covered by the gel.

8. Method (700) for producing a power module bridge (600) according to any one of claims 1 to 6, the power module bridge comprising one or more power modules (300), a cooling surface (402), a frame (504), one or more press-in pins (502) and one or more connecting elements (602), wherein: The method comprises the following steps: I. providing (702) one or more power modules (300), II. fastening (704) the one or more power modules (300) to the cooling surface (402), III. applying (706) a frame (504) including press-fit pins (502) around the one or more power modules (300) on the cooling surface (402), IV. connecting (708) the one or more semiconductor switches (306) to the one or more push-in pins (502), V. mounting (710) the one or more connecting elements (602) on the one or more power modules (300), wherein the one or more connecting elements (602) are mounted in such a way that each connecting element (602) is fastened above and / or to the frame (504), VI. Filling (712) the surrounded area of ​​the frame (504) with gel.

9. The method (700) for producing a power module bridge (600) according to claim 7, wherein: The one or more power modules (300) are fastened to the cooler (402) by a material-locking connection.

10. The method (700) according to claim 8 or 9, wherein: Providing (702) the one or more power modules (300) includes producing (714) the power modules, wherein the producing (714) includes at least the following steps: I. Providing (716) a circuit carrier (102) according to claim 1, II. applying (718) the one or more first semiconductor layers (108) to the circuit carrier (102), wherein the applying (718) comprises connecting by sintering; III. applying (720) the one or more second semiconductor layers (202) to the first semiconductor layer (108), wherein the applying (720) comprises connecting by sintering, IV. Establishing connections (722) between the semiconductor switches (306) via bonding wires (302).

11. The method (700) for producing a power module bridge (600) according to any one of claims 8 to 10, wherein: The frame (504) is fastened to the cooling surface (402) by gluing or welding.

12. The method (700) for producing a power module bridge (600) according to any one of claims 8 to 11, wherein: Signal connections are made via press-in pins (502).

13. Use of one or more power module bridges (600) in a vehicle, wherein: The power module bridge (600) is used for current conversion from direct current to alternating current.

Images