Perovskite cell and preparation method thereof

Abstract

The invention discloses a perovskite cell and a preparation method thereof. The perovskite cell comprises a substrate, a transparent conductive layer, a photoelectric conversion function layer and a back electrode layer which are sequentially laminated along a first direction, the transparent conductive layer, the photoelectric conversion function layer and the back electrode layer are all divided into at least two sub-structures which are connected in series. The solar cell further comprises an insulation column, and the height of the insulation column penetrates through the back electrode layer and a part of the photoelectric conversion function layer in the first direction. The surface, away from the transparent conductive layer, of the insulating column is flush with the surface, away from the transparent conductive layer, of the back electrode layer. According to the perovskite cell provided by the embodiment of the invention, the position of the back electrode layer is of a flat structure and does not comprise a groove type structure, so that the sealing performance of packaging of the perovskite cell is relatively high, and the use safety of the perovskite cell is better.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and more specifically, to a perovskite cell and a method for preparing the same. Background Art

[0002] Perovskite cells, or perovskite solar cells, are a new type of high-efficiency, low-cost photovoltaic power generation technology that uses perovskite structural materials as light-absorbing materials. Perovskite cells have high photoelectric conversion efficiency and have broad application prospects in the photovoltaic field.

[0003] In the prior art, after being divided into several sub-cells, perovskite cells often contain a groove structure, which has an adverse effect on the airtightness of their packaging.

[0004] In view of this, it is necessary to propose a new technical solution to solve the above technical problems. Summary of the invention

[0005] One object of the present application is to provide a new technical solution for perovskite cells and methods for preparing the same.

[0006] According to a first aspect of the present application, a perovskite cell is provided, the perovskite cell comprising:

[0007] A substrate, a transparent conductive layer, a photoelectric conversion functional layer and a back electrode layer are sequentially stacked along a first direction; wherein the transparent conductive layer, the photoelectric conversion functional layer and the back electrode layer are each divided into at least two substructures connected in series;

[0008] The insulating column has a height that penetrates the back electrode layer and part of the photoelectric conversion functional layer along the first direction; and the surface of the insulating column away from the transparent conductive layer is flush with the surface of the back electrode layer away from the transparent conductive layer.

[0009] Optionally, the photoelectric conversion functional layer includes a first charge transport layer, a perovskite layer and a second charge transport layer which are stacked in sequence along a first direction; the polarities of carriers transported by the first charge transport layer and the second charge transport layer are opposite; wherein the first charge transport layer is connected to the transparent conductive layer, and the second charge transport layer is connected to the back electrode layer; along the first direction, the height of the insulating column penetrates the back electrode layer and the second charge transport layer.

[0010] Optionally, the perovskite cell further comprises an isolation column and a conductive column;

[0011] Along the first direction, the height of the isolation column penetrates the transparent conductive layer and the first charge transport layer; the height of the conductive column penetrates the first charge transport layer and the perovskite layer;

[0012] Along the second direction, the isolation pillars, the conductive pillars and the insulating pillars are sequentially arranged at intervals.

[0013] Optionally, the isolation pillars, the conductive pillars and the insulating pillars are sequentially arranged at intervals along the second direction to form a pillar group, and at least two groups of the pillar groups are arranged at intervals along the second direction.

[0014] Optionally, the isolation column is made of perovskite.

[0015] Optionally, the width of the isolation column is smaller than the width of the conductive column; and the material of the conductive column is the same as that of the second charge transport layer.

[0016] Optionally, the first charge transport layer is an electron transport layer and the second charge transport layer is a hole transport layer; or, the first charge transport layer is a hole transport layer and the second charge transport layer is an electron transport layer.

[0017] According to the second aspect of the present application, a method for preparing a perovskite battery as described in the first aspect is provided, the preparation method comprising:

[0018] Providing a substrate having a first surface, and preparing a transparent conductive layer having at least two substructures on the first surface of the substrate;

[0019] A photoelectric conversion functional layer having at least two substructures is prepared on a surface of the transparent conductive layer away from the substrate, and a first subgroove is formed in a partial structure of the photoelectric conversion functional layer away from the transparent conductive layer;

[0020] A back electrode layer is prepared on a surface of the photoelectric conversion functional layer away from the transparent conductive layer, and a second sub-groove is formed on the back electrode layer, penetrating the back electrode layer, wherein the second sub-groove is connected to the first sub-groove to form an insulating groove;

[0021] Disposing a first mask on the back electrode layer, wherein an uncovered area of ​​the first mask corresponds to the insulating groove;

[0022] An insulating material is deposited on the back electrode layer provided with the first mask, and the insulating material fills the insulating grooves to form insulating columns.

[0023] Optionally, preparing a transparent conductive layer having at least two substructures on the first surface of the substrate includes:

[0024] Disposing a second mask in a predetermined area of ​​the first surface of the substrate;

[0025] A transparent conductive layer is formed on the substrate provided with the second mask by a deposition method, and a first isolation groove penetrating the transparent conductive layer is formed corresponding to the shielding area of ​​the second mask.

[0026] Optionally, preparing a photoelectric conversion functional layer having at least two substructures on a surface of the transparent conductive layer away from the substrate comprises:

[0027] Disposing a third mask in a predetermined area of ​​the surface of the transparent conductive layer away from the substrate;

[0028] The transparent conductive layer provided with the third mask is deposited to form a first charge transport layer, and a second isolation groove and a first groove penetrating the first charge transport layer are formed corresponding to the shielding area of ​​the third mask, wherein the second isolation groove and the first isolation groove are connected to each other to form an isolation groove, and the first groove and the second isolation groove are arranged at intervals along the second direction;

[0029] Disposing a fourth mask in a predetermined area of ​​the surface of the first charge transport layer away from the transparent conductive layer;

[0030] The first charge transport layer provided with the fourth mask is deposited to form a perovskite layer, and a second groove penetrating the perovskite layer is formed corresponding to the shielding area of ​​the fourth mask, and the second groove is connected with the first groove to form a conducting groove; at the same time, the isolation groove is filled with a perovskite material to form an isolation column;

[0031] Disposing a fifth mask in a predetermined area of ​​the surface of the perovskite layer away from the first charge transport layer;

[0032] A second charge transport layer is formed by a deposition method on the perovskite layer provided with the fifth mask, and a first sub-groove penetrating the second charge transport layer is formed corresponding to the shielding area of ​​the fifth mask; at the same time, the conductive groove is filled with the material of the second charge transport layer to form a conductive column.

[0033] Optionally, the step of preparing a back electrode layer on a surface of the photoelectric conversion functional layer away from the transparent conductive layer, and forming a second sub-groove penetrating the back electrode layer on the back electrode layer comprises:

[0034] Disposing a sixth mask in a predetermined area of ​​the surface of the second charge transport layer away from the perovskite layer;

[0035] A back electrode layer is formed on the second charge transport layer provided with the sixth mask by a deposition method, and the second sub-groove is formed corresponding to the shielding area of ​​the sixth mask.

[0036] The perovskite battery provided in the embodiments of the present application can achieve the following technical effects:

[0037] The perovskite cell has a flat structure at the back electrode layer and does not include a groove structure. Therefore, the perovskite cell has a higher degree of sealing in packaging and is safer to use.

[0038] Other features and advantages of the present application will become apparent from the following detailed description of exemplary embodiments of the present application with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the application and, together with the description, serve to explain the principles of the application.

[0040] Figure 1 Shown is a schematic structural diagram of a perovskite battery of the present application;

[0041] Figure 2 Shown is a schematic diagram of current flow in a perovskite battery of the present application;

[0042] Figure 3a to Figure 3f Shown is a schematic diagram of a process for preparing a perovskite battery of the present application;

[0043] Figure 4a to Figure 4f Shown is a schematic structural diagram of a mask plate used in a method for preparing a perovskite battery of the present application;

[0044] Figure 5 Shown is a schematic flow chart of a method for preparing a perovskite battery in the present application.

[0045] Description of reference numerals:

[0046] 1. Perovskite battery; 10. Substrate; 11. Transparent conductive layer; 12. First charge transport layer; 13. Perovskite layer; 14. Second charge transport layer; 15. Back electrode layer; 16. Insulating column; 17. Isolation column; 18. Conductive column; 101. First sub-groove; 102. Second sub-groove; 103. First isolation groove; 104. Second isolation groove; 105. First groove; 106. Second groove;

[0047] 21. The first mask plate; 211. The first blocking block; 210. The first gap portion; 22. The second mask plate; 221. The second blocking block; 220. The second gap portion; 23. The third mask plate; 231. The third blocking block a; 232. The third blocking block b; 230. The third gap portion a; 233. The third gap portion b; 24. The fourth mask plate; 241. The fourth blocking block; 240. The fourth gap portion; 25. The fifth mask plate; 251. The fifth blocking block; 250. The fifth gap portion; 26. The sixth mask plate; 261. The sixth blocking block; 260. The sixth gap portion. DETAILED DESCRIPTION

[0048] Various exemplary embodiments of the present application will now be described in detail with reference to the accompanying drawings. It should be noted that unless otherwise specifically stated, the relative arrangement of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present application.

[0049] The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the present application, its application, or uses.

[0050] Technologies, methods, and equipment known to ordinary technicians in the relevant art may not be discussed in detail, but where appropriate, the technologies, methods, and equipment should be considered as part of the specification.

[0051] In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not limiting. Therefore, other examples of the exemplary embodiments may have different values.

[0052] It should be noted that like reference numerals and letters refer to similar items in the following figures, and therefore, once an item is defined in one figure, it need not be further discussed in subsequent figures.

[0053] Reference Figure 1 As shown, according to one embodiment of the present application, a perovskite cell 1 is provided, the perovskite cell 1 comprising a substrate 10, a transparent conductive layer 11, a photoelectric conversion functional layer and a back electrode layer 15 which are sequentially stacked along a first direction; wherein the transparent conductive layer 11, the photoelectric conversion functional layer and the back electrode layer 15 are all divided into at least two substructures connected in series;

[0054] It also includes an insulating column 16. Along the first direction, the height of the insulating column 16 penetrates the back electrode layer 15 and part of the photoelectric conversion functional layer; the surface of the insulating column 16 away from the transparent conductive layer 11 is arranged flush with the surface of the back electrode layer 15 away from the transparent conductive layer 11.

[0055] In the perovskite cell 1 provided in the embodiment of the present application, it includes a substrate 10, a transparent conductive layer 11, a photoelectric conversion functional layer and a back electrode layer 15 which are sequentially stacked along a first direction; the perovskite cell 1 is divided into a plurality of sub-cells connected in series, and each sub-cell is separated by an insulating column 16. In the perovskite cell 1 provided in the embodiment of the present application, the surface of the insulating column 16 away from the transparent conductive layer 11 is flush with the surface of the back electrode layer 15 away from the transparent conductive layer 11, that is, although the sub-cells are separated at the position of the back electrode layer 15, the perovskite cell 1 is still a flat structure at the position of the back electrode layer 15, and does not include a groove-type structure. Therefore, the perovskite cell 1 has a higher sealing property in the packaging and is safer to use. Reference Figure 1 As shown, in one embodiment, the photoelectric conversion functional layer includes a first charge transport layer 12, a perovskite layer 13 and a second charge transport layer 14 which are sequentially stacked along a first direction; the carriers transported by the first charge transport layer 12 and the second charge transport layer 14 have opposite polarities; wherein the first charge transport layer 12 is connected to the transparent conductive layer 11, and the second charge transport layer 14 is connected to the back electrode layer 15; along the first direction, the height of the insulating column 16 penetrates the back electrode layer 15 and the second charge transport layer 14.

[0056] In this specific example, the perovskite cell 1 includes a substrate 10, a transparent conductive layer 11, a first charge transport layer 12, a perovskite layer 13, a second charge transport layer 14 and a back electrode layer 15 which are sequentially stacked along a first direction; wherein the polarity of carriers transported by the first charge transport layer 12 and the second charge transport layer 14 are opposite; specifically, the first charge transport layer 12 is an electron transport layer and the second charge transport layer 14 is a hole transport layer; or, the first charge transport layer 12 is a hole transport layer and the second charge transport layer 14 is an electron transport layer.

[0057] Among them, the substrate is the supporting structure of the perovskite battery, which is usually made of materials with high light transmittance, good stability and mechanical strength; the main function of the substrate is to provide a flat and stable base on which other battery structure layers are built; common substrate materials include glass, flexible polymers, etc.

[0058] The transparent conductive layer is located on the substrate, and its main function is to transmit current. In addition, it can also protect the perovskite layer, prevent the perovskite layer from being corroded by external moisture and gas, and improve the stability of the battery. It needs to have good light transmittance and conductivity to ensure that sunlight can penetrate and shine on the perovskite layer, while collecting the generated current.

[0059] The main function of the hole transport layer is to promote the transport of photogenerated holes (i.e. atoms or molecules lacking electrons) from the perovskite layer while blocking the reverse flow of electrons. This function helps to reduce charge recombination (i.e. the process of electrons and holes recombine), thereby improving the photoelectric conversion efficiency of the battery. The hole transport layer usually uses semiconductor materials with excellent hole transport properties.

[0060] The perovskite layer is the core part of the perovskite cell, which is mainly responsible for absorbing solar energy and generating electron-hole pairs. When sunlight shines on the perovskite layer, photons are absorbed and excite electrons to jump from the valence band to the conduction band, leaving holes behind. These electrons and holes are then separated and transmitted to the corresponding electrode layers, thereby generating current.

[0061] The main function of the electron transport layer is to promote the transport of photogenerated electrons from the perovskite layer and block the reverse flow of holes, thereby helping to reduce charge recombination and improve the photoelectric conversion efficiency of the battery; the electron transport layer usually uses materials with high electron mobility and stability to ensure that electrons can be efficiently transmitted.

[0062] The back electrode layer is located at the bottom layer of the battery. Its main function is to collect holes (or electrons in some trans structures) transmitted from the perovskite layer through the hole transport layer and transmit them to the external circuit. The back electrode layer is usually made of metal or alloy with high conductivity.

[0063] In summary, the various layers in the perovskite cell work together to achieve efficient photoelectric conversion. The transparent conductive layer and the back electrode layer are responsible for collecting and conducting current, the hole transport layer and the electron transport layer are responsible for facilitating the separation and transport of charges, and the perovskite layer is the core of the entire cell, responsible for absorbing sunlight and generating electron-hole pairs.

[0064] In addition, the structure of the perovskite battery 1 provided in the embodiment of the present application avoids direct contact between the back electrode layer 15 and the perovskite layer 13, and the perovskite layer 13 is completely isolated by the electron transport layer and the hole transport layer instead of being exposed to the atmospheric environment, thereby improving the stability of the battery.

[0065] Reference Figure 1 As shown, in one embodiment, the perovskite cell further includes an isolation column 17 and a conductive column 18;

[0066] Along the first direction, the height of the isolation column 17 penetrates the transparent conductive layer 11 and the first charge transport layer 12; the height of the conductive column 18 penetrates the first charge transport layer 12 and the perovskite layer 13;

[0067] Along the second direction, the isolation pillars 17 , the conductive pillars 18 , and the insulating pillars 16 are sequentially arranged at intervals.

[0068] In this specific example, the arrangement of the isolation column 17, the conductive column 18 and the insulating column 16 ensures that the current can flow in accordance with Figure 2 The isolation column 17 separates each sub-cell at the transparent conductive layer 11 and the first charge transport layer 12, the insulating column 16 separates each sub-cell at the back electrode layer 15 and the second charge transport layer 14, and the conductive column 18 realizes the series connection of each sub-cell and the current flow.

[0069] The isolation column 17 , the conductive column 18 and the insulating column 16 only occupy the thickness of two film layers, which helps to reduce the difficulty of processing and manufacturing the perovskite battery 1 and helps to save material costs.

[0070] Reference Figure 1 As shown, in one embodiment, the isolation pillars 17, the conductive pillars 18 and the insulating pillars 16 are sequentially arranged at intervals along the second direction to form a pillar group, and at least two groups of the pillar groups are arranged at intervals along the second direction.

[0071] In this specific example, the isolation columns 17, the conductive columns 18 and the insulating columns 16 are sequentially arranged along the second direction to form a column group, and at least two groups of the column groups are arranged along the second direction to form at least three sub-batteries connected in series.

[0072] Reference Figure 1 As shown, in one embodiment, the material of the isolation column 17 is perovskite.

[0073] Reference Figure 1 As shown, in one embodiment, the width of the isolation column 17 is smaller than the width of the conductive column 18 ; the material of the conductive column 18 is the same as that of the second charge transport layer 14 .

[0074] In this specific example, the isolation column 17 is formed by depositing the perovskite layer 13 and the two are made of the same material; the conductive column 18 is formed by depositing the second charge transport layer 14 and the two are made of the same material. The narrower the width of the isolation column 17, the more conducive it is to reducing the dead zone area.

[0075] Reference Figure 3a to Figure 4f as well as Figure 5 As shown, according to another embodiment of the present application, a method for preparing the perovskite battery as described above is provided, and the preparation method comprises:

[0076] A substrate 10 having a first surface is provided, and a transparent conductive layer 11 having at least two substructures is prepared on the first surface of the substrate 10;

[0077] A photoelectric conversion functional layer having at least two substructures is prepared on a surface of the transparent conductive layer 11 away from the substrate 10, and a first subgroove 101 is formed in a portion of the photoelectric conversion functional layer away from the transparent conductive layer 11;

[0078] A back electrode layer 15 is prepared on the surface of the photoelectric conversion functional layer away from the transparent conductive layer 11, and a second sub-groove 102 penetrating the back electrode layer 15 is formed on the back electrode layer 15, and the second sub-groove 102 is connected to the first sub-groove 101 to form an insulating groove;

[0079] A first mask 21 is disposed on the back electrode layer 15 , and an uncovered area of ​​the first mask 21 corresponds to the insulating groove. An insulating material is deposited on the back electrode layer 15 provided with the first mask 21 , and the insulating material fills the insulating groove and forms an insulating column 16 .

[0080] In the preparation method of the perovskite cell provided in the embodiment of the present application, when depositing the insulating material on the back electrode layer 15, a first mask plate 21 is used to assist the deposition process, so that the insulating material is completely deposited to fill the insulating groove and form an insulating column 16; the insulating material will not be deposited in other areas of the back electrode layer 15 except the insulating groove.

[0081] The first mask 21 includes at least two first blocking blocks 211 arranged at intervals, and a first gap portion 210 is provided between two adjacent first blocking blocks 211, and the first gap portion 210 constitutes an uncovered area of ​​the first mask 21; the width of the first blocking block 211 is much larger than the width of the first gap portion 210; the width of the first gap portion 210 corresponds to the width of the insulating groove.

[0082] The perovskite battery 1 manufactured by the preparation method of the perovskite battery provided in the embodiment of the present application does not include a grooved structure, and has a flat structure at the position of the back electrode layer 15, so that the packaging of the perovskite battery 1 is more airtight and safer to use.

[0083] Reference Figure 3a , Figure 4b As shown, in one embodiment, the transparent conductive layer 11 having at least two substructures is prepared on the first surface of the substrate 10, including:

[0084] A second mask 22 is disposed in a predetermined area of ​​the first surface of the substrate 10;

[0085] A transparent conductive layer 11 is formed on the substrate 10 provided with the second mask 22 by a deposition method, and a first isolation groove 103 penetrating the transparent conductive layer 11 is formed corresponding to the shielding area of ​​the second mask 22 .

[0086] In this specific example, the second mask 22 is used in the process of preparing the transparent conductive layer 11, so that the first isolation groove 103 that divides the transparent conductive layer 11 is formed while forming the transparent conductive layer 11, thereby avoiding the possibility of damaging the transparent conductive layer 11 by laser etching.

[0087] The second mask plate 22 includes at least two second blocking blocks 221 arranged at intervals, and there is a second gap portion 220 between two adjacent second blocking blocks 221, and the second blocking block 221 constitutes a blocking area of ​​the second mask plate 22; the width of the second blocking block 221 is much smaller than the width of the second gap portion 220; the width of the second blocking block 221 corresponds to the width of the first isolation groove 103, and the height of the second blocking block 221 corresponds to the thickness of the transparent conductive layer 11.

[0088] Reference Figure 3b to Figure 4e As shown, in one embodiment, the photoelectric conversion functional layer having at least two substructures is prepared on the surface of the transparent conductive layer 11 away from the substrate 10, including:

[0089] A third mask 23 is disposed in a predetermined area of ​​the transparent conductive layer 11 away from the surface of the substrate 10;

[0090] The transparent conductive layer 11 provided with the third mask 23 is deposited to form a first charge transport layer 12, and a second isolation groove 104 and a first groove 105 penetrating the first charge transport layer 12 are respectively formed corresponding to the shielding area of ​​the third mask 23; wherein the second isolation groove 104 and the first isolation groove 103 are connected to each other to form an isolation groove, and the first groove 105 and the second isolation groove 104 are arranged at intervals along the second direction;

[0091] A fourth mask 24 is disposed in a predetermined area of ​​the first charge transport layer 12 away from the surface of the transparent conductive layer 11;

[0092] The first charge transport layer 12 provided with the fourth mask 24 is deposited to form a perovskite layer 13, and a second groove 106 penetrating the perovskite layer 13 is formed corresponding to the shielding area of ​​the fourth mask 24, and the second groove 106 is connected with the first groove 105 to form a conducting groove; at the same time, the isolation groove is filled with a perovskite material to form an isolation column 17;

[0093] Disposing a fifth mask 25 in a predetermined area of ​​the surface of the perovskite layer 13 away from the first charge transport layer 12;

[0094] The second charge transport layer 14 is formed by a deposition method on the perovskite layer 13 provided with the fifth mask 25, and a first sub-groove 101 penetrating the second charge transport layer 14 is formed corresponding to the shielding area of ​​the fifth mask 25; at the same time, the conductive groove is filled with the material of the second charge transport layer 14 to form a conductive column 18.

[0095] In this specific example, the third mask plate 23 includes at least two spaced-apart blocking block groups, each blocking block group includes two spaced-apart third blocking blocks a231 and third blocking blocks b232, and the third blocking blocks a231 and the third blocking blocks b232 constitute two blocking areas of the third mask plate 23; wherein, the third blocking block a231 corresponds to the second isolation groove 104, and the third blocking block b232 corresponds to the first groove 105.

[0096] There is a third gap portion a230 between two adjacent blocking block groups, and there is a third gap portion b233 between the third blocking block a231 and the third blocking block b232. The width of the third gap portion a230 is much larger than the widths of the third blocking blocks a231, b232 and b233; the width of the third blocking block a231 corresponds to the width of the second isolation groove 104, and the width of the third gap portion b233 corresponds to the width of the first groove 105; the height of the third blocking block a231 and the height of the third blocking block b232 correspond to the thickness of the first charge transfer layer 12.

[0097] The fourth mask plate 24 includes at least two fourth blocking blocks 241 arranged at intervals, and a fourth gap portion 240 is provided between two adjacent fourth blocking blocks 241, and the fourth blocking block 241 constitutes a blocking area of ​​the fourth mask plate 24; the width of the fourth blocking block 241 is much smaller than the width of the fourth gap portion 240; the width of the fourth blocking block 241 corresponds to the width of the second groove 106, and the height of the fourth blocking block 241 corresponds to the thickness of the perovskite layer 13.

[0098] The fifth mask plate 25 includes at least two fifth blocking blocks 251 arranged at intervals, and a fifth gap portion 250 is provided between two adjacent fifth blocking blocks 251, and the fifth blocking block 251 constitutes a blocking area of ​​the fifth mask plate 25; the width of the fifth blocking block 251 is much smaller than the width of the fifth gap portion 250; the width of the fifth blocking block 251 corresponds to the width of the first sub-groove 101, and the height of the fifth blocking block 251 corresponds to the thickness of the second charge transfer layer 14.

[0099] Reference Figure 3e , Figure 4fAs shown, in one embodiment, the back electrode layer 15 is prepared on the surface of the photoelectric conversion functional layer away from the transparent conductive layer 11, and a second sub-groove 102 penetrating the back electrode layer 15 is formed on the back electrode layer 15, including:

[0100] Disposing a sixth mask 26 in a predetermined area of ​​the second charge transport layer 14 away from the surface of the perovskite layer 13;

[0101] The back electrode layer 15 is formed on the second charge transport layer 14 provided with the sixth mask 26 by a deposition method, and the second sub-groove 102 is formed corresponding to the shielding area of ​​the sixth mask 26 .

[0102] In this specific example, the sixth mask 26 includes at least two sixth blocking blocks 261 arranged at intervals, and a sixth gap portion 260 is provided between two adjacent sixth blocking blocks 261, and the sixth blocking block 261 constitutes a blocking area of ​​the sixth mask 26; the width of the sixth blocking block 261 is much smaller than the width of the sixth gap portion 260; the width of the sixth blocking block 261 corresponds to the width of the second sub-groove 102, and the height of the sixth blocking block 261 corresponds to the thickness of the back electrode layer 15.

[0103] In summary, the preparation method of the perovskite battery provided in the embodiment of the present application uses each mask to control the connection or disconnection of the corresponding film layer to prevent damage to the film layer and increase the series resistance. In addition, its accuracy and consistency are high; additional etching or cleaning steps are omitted, and production efficiency is improved. The use of mask technology allows the position and shape of material deposition to be accurately controlled, thereby improving the manufacturing accuracy of the battery assembly. In addition, the use of mask technology can optimize the structural design of the battery assembly, such as optimizing the carrier transmission and light absorption efficiency by accurately controlling the thickness and position of each layer. In addition, precise material deposition can reduce unnecessary material waste and further reduce manufacturing costs.

[0104] Although some specific embodiments of the present application have been described in detail by way of example, it should be understood by those skilled in the art that the above examples are only for illustration, not for limiting the scope of the present application. It should be understood by those skilled in the art that the above embodiments may be modified without departing from the scope and spirit of the present application. The scope of the present application is defined by the appended claims.

Claims

1. A perovskite battery, characterized in that: The perovskite battery comprises: A substrate (10), a transparent conductive layer (11), a photoelectric conversion functional layer and a back electrode layer (15) are sequentially stacked along a first direction; wherein the transparent conductive layer (11), the photoelectric conversion functional layer and the back electrode layer (15) are each divided into at least two substructures connected in series; An insulating column (16), along a first direction, the height of the insulating column (16) penetrates the back electrode layer (15) and a portion of the photoelectric conversion functional layer; a surface of the insulating column (16) away from the transparent conductive layer (11) is arranged flush with a surface of the back electrode layer (15) away from the transparent conductive layer (11).

2. The perovskite battery according to claim 1, characterized in that: The photoelectric conversion functional layer comprises a first charge transport layer (12), a perovskite layer (13) and a second charge transport layer (14) which are sequentially stacked along a first direction; the polarities of carriers transported by the first charge transport layer (12) and the second charge transport layer (14) are opposite; wherein the first charge transport layer (12) is connected to the transparent conductive layer (11), and the second charge transport layer (14) is connected to the back electrode layer (15); and along the first direction, the height of the insulating column (16) penetrates the back electrode layer (15) and the second charge transport layer (14).

3. The perovskite battery according to claim 2, characterized in that: The perovskite battery further comprises an isolation column (17) and a conductive column (18); Along the first direction, the height of the isolation column (17) is such that it penetrates the transparent conductive layer (11) and the first charge transport layer (12); the height of the conductive column (18) is such that it penetrates the first charge transport layer (12) and the perovskite layer (13); Along the second direction, the isolation column (17), the conductive column (18) and the insulating column (16) are sequentially arranged at intervals.

4. The perovskite battery according to claim 3, characterized in that: The isolation column (17), the conductive column (18) and the insulating column (16) are sequentially arranged at intervals along the second direction to form a column group, and at least two groups of the column groups are arranged at intervals along the second direction.

5. The perovskite battery according to claim 3, characterized in that: The material of the isolation column (17) is perovskite.

6. The perovskite battery according to claim 3, characterized in that: The width of the isolation column (17) is smaller than the width of the conductive column (18); the material of the conductive column (18) is the same as that of the second charge transport layer (14).

7. The perovskite battery according to claim 2, characterized in that: The first charge transport layer (12) is an electron transport layer and the second charge transport layer (14) is a hole transport layer; or the first charge transport layer (12) is a hole transport layer and the second charge transport layer (14) is an electron transport layer.

8. A method for preparing a perovskite battery, characterized in that: The preparation method comprises: Providing a substrate (10) having a first surface, and preparing a transparent conductive layer (11) having at least two substructures on the first surface of the substrate (10); A photoelectric conversion functional layer having at least two substructures is prepared on a surface of the transparent conductive layer (11) away from the substrate (10), and a first subgroove (101) is formed in a portion of the structure of the photoelectric conversion functional layer away from the transparent conductive layer (11); A back electrode layer (15) is prepared on a surface of the photoelectric conversion functional layer away from the transparent conductive layer (11), and a second sub-groove (102) penetrating the back electrode layer (15) is formed on the back electrode layer (15), wherein the second sub-groove (102) is connected to the first sub-groove (101) to form an insulating groove; A first mask (21) is arranged on the back electrode layer (15), wherein an uncovered area of ​​the first mask (21) is arranged corresponding to the insulating groove; An insulating material is deposited on the back electrode layer (15) provided with the first mask (21), and the insulating material fills the insulating groove and forms an insulating column (16).

9. The preparation method according to claim 8, characterized in that: The method of preparing a transparent conductive layer (11) having at least two substructures on the first surface of the substrate (10) comprises: Disposing a second mask (22) in a predetermined area of ​​the first surface of the substrate (10); A transparent conductive layer (11) is formed by a deposition method on the substrate (10) provided with the second mask (22), and a first isolation groove (103) penetrating the transparent conductive layer (11) is formed corresponding to the shielding area of ​​the second mask (22).

10. The preparation method according to claim 9, characterized in that: The step of preparing a photoelectric conversion functional layer having at least two substructures on a surface of the transparent conductive layer (11) away from the substrate (10) comprises: Disposing a third mask (23) in a predetermined area of ​​the surface of the transparent conductive layer (11) away from the substrate (10); A first charge transport layer (12) is formed by a deposition method on the transparent conductive layer (11) provided with the third mask (23), and a second isolation groove (104) and a first groove (105) penetrating the first charge transport layer (12) are respectively formed corresponding to the shielding area of ​​the third mask (23); wherein the second isolation groove (104) and the first isolation groove (103) are connected to each other to form an isolation groove, and the first groove (105) and the second isolation groove (104) are arranged at intervals along the second direction; Disposing a fourth mask (24) in a predetermined area of ​​the surface of the first charge transport layer (12) away from the transparent conductive layer (11); The first charge transport layer (12) provided with the fourth mask (24) is deposited to form a perovskite layer (13), and a second groove (106) penetrating the perovskite layer (13) is formed corresponding to the shielding area of ​​the fourth mask (24), the second groove (106) and the first groove (105) being interconnected to form a conduction groove; at the same time, the isolation groove is filled with a perovskite material to form an isolation column (17); Disposing a fifth mask (25) in a predetermined area of ​​the surface of the perovskite layer (13) away from the first charge transport layer (12); A second charge transport layer (14) is formed by a deposition method on the perovskite layer (13) provided with the fifth mask (25), and a first sub-groove (101) penetrating the second charge transport layer (14) is formed corresponding to the shielding area of ​​the fifth mask (25); at the same time, the conduction groove is filled with the material of the second charge transport layer (14) to form a conductive column (18).

11. The preparation method according to claim 10, characterized in that: The method comprises preparing a back electrode layer (15) on a surface of the photoelectric conversion functional layer away from the transparent conductive layer (11), and forming a second sub-groove (102) on the back electrode layer (15) that penetrates the back electrode layer (15), comprising: Disposing a sixth mask (26) in a predetermined area of ​​the surface of the second charge transport layer (14) away from the perovskite layer (13); A deposition method is used to form a back electrode layer (15) on the second charge transport layer (14) provided with the sixth mask (26), and the second sub-groove (102) is formed corresponding to the shielding area of ​​the sixth mask (26).

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