Substrate processing system for processing a plurality of substrates and method of processing substrates in an in-line substrate processing system

Abstract

A substrate processing system for processing a plurality of substrates is described. The substrate processing system includes: one or more vacuum chambers; at least a first deposition source and a second deposition source, the first deposition source and the second deposition source being provided in one or more vacuum chambers, the first deposition source providing a first deposition region in a first angular direction and the second deposition source providing a second deposition region; at least a first free shield associated with the first deposition source, the first free shield configured to block evaporated material in a second angular direction of the first deposition source; a substrate transport track configured to move a first substrate of the plurality of substrates through the first deposition area and the second deposition area by translation; and a shield transport track between the substrate transport track and the first deposition source, the shield transport track configured to move, by translation, a shield back and forth between a first shield position of the first deposition area and a second shield position of the first deposition area.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a substrate processing system, in particular an in-line substrate processing system. In addition, embodiments of the present disclosure relate to systems and methods for evaporating an OLED layer stack in a vertical orientation. Embodiments of the present disclosure relate particularly to a substrate processing system for processing multiple substrates (such as a substrate processing system for processing multiple large-area substrates in a substantially vertical orientation), a method of processing a substrate in an in-line substrate processing system, and a method of manufacturing a layer stack for a display on a large-area substrate. Background Art

[0002] Organic light emitting diodes (OLEDs) are a special type of light emitting diode in which the emitting layer includes a thin film of certain organic compounds. OLEDs are used to make television screens, computer monitors, mobile phones, other handheld devices, etc. for displaying information. OLEDs can also be used for general space lighting. Because OLED materials emit light directly, OLED displays can have a greater range of colors and brightness than traditional LCD displays. OLED displays use much less energy than traditional LCD displays.

[0003] In addition, the fact that OLEDs can be manufactured on flexible substrates creates further applications. An OLED display may include, for example, a layer of organic material between two electrodes, such as electrodes made of a metallic material. Typically, the OLED is placed between two glass panels, and the edges of the glass panels are sealed to encapsulate the OLED in the glass panels. Alternatively, the OLED may be encapsulated using thin film technology, such as with a barrier film.

[0004] The process of manufacturing OLED displays includes thermal evaporation of organic materials in a high vacuum and deposition of the organic materials on a substrate. The process uses an edge exclusion mask to block areas of the substrate (e.g., the edges of the substrate) from being coated. During deposition, the substrate is arranged behind the mask.

[0005] Given the trend toward display manufacturing using larger substrate sizes, it would be beneficial to provide improved systems and improved methods for depositing organic layer stacks. Summary of the invention

[0006] In view of the above, a substrate processing system for processing a plurality of substrates, a method for processing a first substrate of a plurality of substrates in an in-line substrate processing system and a method for manufacturing a layer stack for a display on a large-area substrate are provided. Further aspects, embodiments, features and details may be derived from the dependent claims, the drawings and the description.

[0007] According to an embodiment, a substrate processing system for processing a plurality of substrates is provided. The substrate processing system comprises: one or more vacuum chambers; at least a first deposition source provided in the one or more vacuum chambers, the first deposition source providing a first deposition area in a first angular direction; at least a first idle shield associated with the first deposition source, the first idle shield being configured to block evaporated material in a second angular direction of the first deposition source; a substrate transport track configured to move a first substrate of a plurality of substrates through the first deposition area by translation; and a shield transport track between the substrate transport track and the first deposition source, the shield transport track being configured to move the shield back and forth between a first shield position of the first deposition area and a second shield position of the first deposition area by translation.

[0008] According to an embodiment, a method for processing a first substrate among a plurality of substrates in an inline substrate processing system is provided. The method includes: moving a first substrate on a first substrate carrier to a first substrate position associated with a first deposition source along a substrate transport track in one or more vacuum chambers by translation; moving a shield to a first shield position by translation, wherein the first shield position is configured to protect at least a portion of at least one of the first substrate to be coated by the first deposition source and the first substrate carrier; moving the first substrate and the shield on the first substrate carrier by translation, wherein the first substrate is moved through a first deposition area of ​​the first deposition source for depositing material on the first substrate, wherein the first substrate is moved to a second substrate position, and the shield is moved to a second shield position, wherein the second shield position is configured to protect at least a portion of at least one of the first substrate to be coated by the first deposition source and the first substrate carrier; and moving the shield from the second shield position back to the first shield position by translation.

[0009] According to an embodiment, a method for manufacturing a layer stack for a display on a large area substrate is provided. The method includes a method for processing a substrate in an inline processing system according to any of the embodiments described herein, wherein at least a first layer of the layer stack is deposited by a first deposition source and a second layer of the layer stack is deposited by a second deposition source.

[0010] According to an embodiment, a substrate processing system for processing a plurality of substrates is provided. The system comprises: one or more vacuum chambers; at least a first deposition source and a second deposition source, the first deposition source and the second deposition source being provided in the one or more vacuum chambers, the first deposition source providing a first deposition area in a first angular direction; a substrate transport track, the substrate transport track being configured to move a first substrate of a plurality of substrates through a first deposition area by translation; a shield transport track, the shield transport track being configured to move a shield by translation; and a controller, the controller having a memory including instructions and having a processor, wherein the instructions, when executed by the processor, cause the substrate processing system to perform a method according to any one of the embodiments described herein. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order to be able to understand in detail the manner in which the above-mentioned features of the present disclosure are achieved, a more particular description of the present disclosure briefly summarized above may be made by reference to the embodiments. The accompanying drawings relate to the embodiments and are described below:

[0012] Figure 1 A schematic top view showing an in-line evaporation system according to an embodiment of the present disclosure;

[0013] Figures 2A to 2G Various processing conditions are shown to illustrate embodiments according to the present disclosure and as shown in FIG. Figure 3 A schematic top view of a processing chamber is described;

[0014] Figure 3 shows a flow chart illustrating a method of manufacturing an organic layer stack according to embodiments described herein;

[0015] Figure 4A and Figure 4B A schematic diagram showing the relative positions of a substrate carrier, a movable shield, and a deposition source according to an embodiment of the present disclosure;

[0016] Figure 5A and Figure 5B A schematic diagram showing a movable shield that may be used with embodiments of the present disclosure; and

[0017] FIG. 6A to FIG. 6E Schematic side views showing various processing conditions according to embodiments of the present disclosure. DETAILED DESCRIPTION

[0018] Reference will now be made in detail to various embodiments, one or more examples of which are illustrated in the accompanying drawings. In the following description of the drawings, the same reference numerals denote the same components. Typically, only the differences with respect to a single embodiment are described. Each example is provided by way of explanation, and each example is not meant to limit the present disclosure. In addition, features illustrated or described as part of one embodiment may be used on other embodiments or used in conjunction with other embodiments to produce yet another embodiment. This specification is intended to include such modifications and changes.

[0019] The process of manufacturing an OLED display may include thermal evaporation of organic material in a high vacuum and deposition of the organic material on a substrate. Depending on the display technology, patterning of the organic layer onto the substrate using a mask during deposition may be provided, or patterning may be provided without a fine metal mask. An edge exclusion mask or shield (e.g., a removable shield) may be provided to block the evaporated material from reaching the substrate carrier and, optionally, to block the evaporated material from reaching the edge of the substrate to be processed. For example, the mask may be an edge exclusion mask or a removable shield that masks the perimeter of a glass substrate (such as, for example, a rectangular glass substrate with an edge of a few millimeters).

[0020] Embodiments of the present disclosure relate to substrate processing systems and substrate processing apparatus, in particular, in-line systems and in-line apparatus for subsequently depositing materials on multiple substrates. A movable edge exclusion mask or movable shield is provided for in-line processing. A specific movable edge exclusion mask or movable shield is associated with a specific deposition source and / or can be stored for use with a specific deposition source.

[0021] According to some embodiments, which can be combined with other embodiments described herein, methods are provided for reducing edge exclusion distance of a dynamic deposition system by dynamically adjusting shield positions, particularly entering and exiting a deposition zone (ie, processing area), with reference to substrate positions.

[0022] According to an embodiment, a substrate processing system for processing multiple substrates is provided. The substrate processing system includes: one or more vacuum chambers; and at least a first deposition source and an optional second deposition source, the first deposition source and the second deposition source being provided in the one or more vacuum chambers. The first deposition source provides a first deposition area in a first angular direction, and optionally, the second deposition source provides a second deposition area. At least a first idle shield is associated with the first deposition source, and the first idle shield is configured to block the evaporated material in the second angular direction of the first deposition source. The system further includes: a substrate transport track, the substrate transport track is configured to move a first substrate of a plurality of substrates through a first deposition area and an optional second deposition area by translation; and a shield transport track, the shield transport track is between the substrate transport track and the first deposition source, and the shield transport track is configured to move the shield back and forth between a first shield position of the first deposition area and a second shield position of the first deposition area by translation.

[0023] Figure 1 1 shows a substrate processing system 100. Figure 1 The substrate processing system 100 shown in FIG. 1 includes a plurality of vacuum chambers. The one or more vacuum chambers may include a vacuum processing chamber 102 and a vacuum transfer chamber 104 . Figure 1 Three vacuum processing chambers and three vacuum transfer chambers are shown. The vacuum processing chamber 102 is included in the substrate processing device 101. A glass handling module (not shown) may be provided at one end of the substrate processing system 100. The glass handling module may load and / or unload the substrate into the vacuum processing chamber. In addition, a rotation module (not shown) may be provided at a second end of the substrate processing system, the second end being at a distal end relative to the mask handling module.

[0024] like Figure 1 The substrate processing system shown in FIG. 1 is an in-line substrate processing system. Substrates to be processed in the substrate processing system 100 are loaded at the glass handling module (e.g., on a substrate carrier) and unloaded at the glass handling module (e.g., from a substrate carrier). The substrates can be transported in one direction (e.g., in one direction) on the first substrate transport track 132. Figure 1The substrate can be transported on the second substrate transport track 132 (for example, from left to right). The substrate can be rotated in the rotation module and transferred to the second substrate transport track 132. The substrate can be transported on the second substrate transport track (for example, from right to left) to unload the substrate at the glass handling module. Correspondingly, at the same location, an empty carrier is provided after unloading the processed substrate, at which position a new substrate is loaded onto the empty carrier. Thus, the transportation of empty carriers (for example, on the carrier return path) can be avoided or minimized. In addition, the exposure of the carrier to atmospheric conditions can be avoided or minimized. In addition, the rotation module allows folding the substrate processing system. As Figure 1 As shown in the example, the substrate processing system may include: a forward transport path on the first substrate transport track 132, the forward transport path is used to deposit a first set of material layers, such as an organic layer, on the substrate; and a backward transport path on the second substrate transport track 132, the backward transport path is used to deposit a second set of material layers above the first set of material layers. The substrate is rotated between the forward transport path and the backward transport path by a rotation module. By "folding" the substrate processing system, the length of the substrate processing system can be reduced.

[0025] Figure 1 The substrate processing system shown in further includes a shield transport track 134, and in particular a first shield transport track 134 in the forward transport path and a second shield transport track 134 in the backward transport path. The shield transport track 134 is provided between the substrate transport track 132 and the deposition source 110. The shield transport track is configured to move the shield in front of the deposition area.

[0026] According to an embodiment of the present disclosure, reference is made to edge exclusion masks and / or shields. A shield as described herein may be understood as a mask having a material blocking area and a hole in the material blocking area. The hole has a size that covers at least a portion of the substrate carrier (and in particular covers the substrate carrier) to avoid or reduce material deposition on the substrate carrier during substrate processing. As referenced Figure 5A and Figure 5B Described in more detail, the size of the apertures of the shield may be configured to shield a small portion of the substrate, such as an edge portion of a substrate having a size of several millimeters at least on one substrate dimension. In addition, the aperture may have a size smaller than the substrate along a second substrate dimension to shield an edge portion of the substrate (i.e., an edge portion of several millimeters also on the second substrate dimension). Accordingly, the shield as referred to herein may also be referred to as an edge exclusion mask. However, according to various embodiments, the shield may be an edge exclusion mask only along one substrate dimension, or the shield may only substantially block the substrate carrier from material deposition.

[0027] The inline substrate processing system may be a display manufacturing system, particularly an OLED display manufacturing system, and more particularly an OLED display manufacturing system for large area substrates, or a part of a display manufacturing system. Transport of a mask or a substrate carrier, for example on a mask carrier, may be provided, for example, in a vertical orientation of the substrate carrier (i.e., movement of the substrate carrier through the inline substrate processing system). For example, the substrate carrier may be configured to hold a substrate, such as a glass sheet, in a vertical orientation or substantially vertical orientation.

[0028] According to some embodiments that can be combined with other embodiments described herein, the substrate carrier can be configured to hold or support the substrate or the substrate and the mask in a substantially vertical orientation. In addition, the mask carrier can be configured to hold or support the mask in a substantially vertical orientation. As used throughout the present disclosure, "vertical" or "substantially vertical" is understood to allow deviations from the vertical direction or orientation of ±20° or less, such as ±10° or less, particularly when it comes to substrate orientation. The deviation can be provided, for example, because a substrate support with some deviation from the vertical orientation can result in a more stable substrate position. In addition, when the substrate is tilted forward, fewer particles reach the substrate surface. However, during deposition of materials (such as organic or metallic materials) on a substrate in a high vacuum, for example, the substrate orientation is considered to be substantially vertical, which is considered to be different from a horizontal substrate orientation, which can be considered to be horizontal ±20° or less.

[0029] like Figure 1 As shown in , a substrate transport track 132 may be provided. In addition, a shield transport track 134 may be provided. According to some embodiments, the substrate transport track and / or the shield transport track may be configured for contactless transport of the substrate carrier. The contactless transport may be a magnetic levitation system. In particular, a magnetic levitation system may be provided so that at least a portion of the weight of the substrate carrier and / or the shield carrier is carried by the magnetic levitation system. Then, the carrier may be guided through the inline substrate processing system in a substantially contactless manner along the substrate transport track. Then, the carrier may be guided back and forth in the inline substrate processing system in a substantially contactless manner along the shield transport track. In particular, the transport may include a carrier holding structure and a carrier drive structure. The carrier holding structure may be configured for contactless holding of the carrier. The carrier drive structure may be configured for contactless translation of the carrier. The carrier holding structure may include a magnetic levitation system for contactlessly holding the substrate carrier. In addition, the carrier drive structure may include a magnetic drive system for contactless drive of the carrier. Other transport devices may also be provided, such as other transport devices on rollers or with passive magnetic elements.

[0030] As in Figure 1The substrate processing apparatus 101 exemplarily shown in FIG. 1 may include a forward transport path. The forward transport path includes a substrate transport track 132 and a shield transport track 134. For example, the forward transport path may be Figure 1 1 , wherein the substrate is transported from left to right through the substrate processing system 100. A deposition source 110 is provided in the vacuum processing chamber 102. In addition, an idle shield 120 is provided. The idle shield is configured to block evaporated material, that is, material evaporated from the deposition source 110. Figures 2A to 2G More detailed description (e.g. in Figure 1 The deposition source 110 can be rotated to an idle position (in a clockwise direction in FIG. 1 ). In the idle position, the evaporated material is blocked by the idle shield 120. Figure 1 In the rotational position shown in FIG. 1 , material evaporated by deposition source 110 may pass through apertures 122 in idle shield 120 to deposit the material on a substrate.

[0031] For example, the deposition source 110 may be an organic deposition source. The deposition source is provided in a vacuum processing chamber of the substrate processing device 101. According to some embodiments that may be combined with other embodiments described herein, one or more deposition sources in the substrate processing system 100 may be evaporation sources and in particular line sources extending substantially vertically. For example, when the substrate moves past the deposition source 110 providing the line source, an organic material may be deposited on the substrate. According to some embodiments that may be combined with other embodiments described herein, one or more of the deposition sources may also be a metal source and / or an inorganic source, for example, to manufacture the cathode of the device.

[0032] According to some embodiments, which may be combined with other embodiments described herein, the inline substrate processing system may include at least one transport path. For example, a forward transport path may be provided, i.e. Figure 1 Optionally, such as Figure 1 As shown in , a second transport path having a second substrate transport track 132 and a second shield transport track 134 may be provided. Accordingly, the substrate processing apparatus 101 may include a first deposition source 110 in the vacuum processing chamber 102 and a second deposition source 110 in the vacuum processing chamber 102. According to some embodiments that may be combined with other embodiments described herein, a forward transport path may be separated from a backward transport path by one or more protective shields 142. The protective shield 142 separates the forward transport path from the backward transport path to allow, for example, deposition of different materials in the vacuum processing chamber 102.

[0033] refer to Figures 2A to 2G and Figure 3Methods of operating a substrate processing system and methods of processing a substrate according to embodiments of the present disclosure are described. According to operation 302, a first substrate is moved to a first substrate position. The first substrate position is associated with a first deposition source 110. Figure 2A As shown in FIG. 1 , a substrate 210 may be provided on a substrate carrier 202. Moving from left to right along the substrate transport track Figures 2A to 2G The substrate is moved by translation and in particular in a vertical orientation. According to operation 304, the shield 220 is moved to a first shield position. Figure 2A As shown in , the first shield position is configured to protect at least a portion of the substrate and / or the substrate carrier from being coated. In the first shield position, the substrate 210 can be coated through the apertures of the shield 220.

[0034] like Figure 2B As shown in , and according to operation 306, the substrate 210 and the shield 220 are moved through the deposition area of ​​the deposition source 110 for substrate processing. Figure 2B As the substrate and shield are moved from left to right in FIG. 2 , material may be deposited on the substrate. The substrate carrier and optionally a portion of the substrate (e.g., the edge of the substrate) are protected from being coated by the shield 220. Figure 2C As shown in , after processing substrate 210, the substrate (e.g., supported by substrate carrier 202) is in a second substrate position relative to the deposition area of ​​deposition source 110. Shield 220 is in the second shield position. At operation 308, and as Figure 2D As shown in , the deposition source 110 is rotated so that the plume of evaporated material is directed toward the idle shield 120. Figure 2E As shown in , the first substrate 210 is further moved along the transport path (eg, toward another deposition source 110). The shield 220 is associated with the deposition source 110 and is moved back to the first shield position (see operation 310). Figure 2E As shown in FIG. 1 , the shield 220 may await the second substrate 212 in the first shield position.

[0035] According to an embodiment, a method for processing a first substrate among a plurality of substrates in an inline substrate processing system is provided. The method includes: moving a first substrate on a first substrate carrier to a first substrate position associated with a first deposition source along a substrate transport track in one or more vacuum chambers by translation; moving a shield to a first shield position by translation, wherein the first shield position is configured to protect at least a portion of at least one of the first substrate to be coated by the first deposition source and the first substrate carrier; moving the first substrate and the shield on the first substrate carrier by translation, wherein the first substrate is moved through a first deposition area of ​​the first deposition source for depositing material on the first substrate, wherein the first substrate is moved to a second substrate position, and the shield is moved to a second shield position, wherein the second shield position is configured to protect at least a portion of at least one of the first substrate to be coated by the first deposition source and the first substrate carrier; moving the first substrate toward a second deposition area of ​​the second deposition source by translation; and moving the mask from the second shield position back to the first shield position by translation.

[0036] According to the methods described herein, a method for processing a substrate includes depositing a material on a first substrate while moving the substrate through a first deposition region of a first deposition source, and a first deposition source may be provided in a first angular direction. For example, the first angular direction corresponds to a source rotation, wherein the material passes through the hole 122 of the idle shield 120. According to some embodiments that may be combined with other embodiments described herein, the method for processing a substrate may further include rotating the first deposition source from the first angular direction to a second angular direction, wherein in the second angular direction, the evaporated material is blocked by the idle shield.

[0037] like Figure 2F As shown in , the shield 220 and the second substrate 212 can be moved in the substrate processing system so that the shield 220 is in a first shield position and the second substrate is in a first substrate position. Figure 2G As illustrated in FIG. 1 , the deposition source 110 may be rotated from the second rotation position to the first rotation position. Figure 2G and Figure 2A Accordingly, by repeating the sequence described above, the method may include moving the second substrate and the shield on the second substrate carrier by translation, wherein the second substrate is moved through the first deposition area of ​​the first deposition source for depositing material on the second substrate. Figures 2A to 2G The first substrate on the first substrate carrier is moved (not shown), and an additional shield may be associated with a second deposition source. The movable substrate passes through a second deposition area of ​​the second deposition source for depositing material on the first substrate.

[0038] As described above, in an initial operation, the edge exclusion mask or shield, in particular the shield carrier, is in a starting position (see e.g. Figure 2A According to some embodiments, which can be combined with other embodiments described herein, the shield carrier and the substrate carrier can be moved synchronously with each other (see, for example, Figure 2B and Figure 2C After the deposition is completed, the deposition source 110 is rotated to an idle position relative to the idle shield, that is, the deposition source is rotated into the idle shield (see, for example Figure 2D ). For example, the idle position may be a second angular orientation. This enables further transport of the shield carrier and / or substrate carrier. The substrate carrier may be moved forward to another source. The shield carrier stays at the deposition source 110 and moves back to the starting position (see, e.g. Figure 2E ). The deposition source is rotated back into the process position to restart the process with another substrate (see Figure 2G ). According to some embodiments that can be combined with other embodiments described herein, the hole 122 of the idle shield 120 can have a sufficiently large size so that some material can be deposited into the vacuum processing chamber 102. Accordingly, in order to block the material of the deposition source 110 during the rotation of the deposition source, the shield can move in relation to the rotation of the deposition source. The shield can help the idle shield protect chamber components. Undesirable coating of the interior chamber wall can be reduced or avoided.

[0039] Figure 1A controller 180 is shown, which is connected to the substrate processing system 100. The controller 180 includes a central processing unit (CPU), a memory, and, for example, a support circuit. To facilitate control of the apparatus and / or system for substrate processing, the CPU may be one of any form of general-purpose computer processors that can be used in industrial settings to control various chambers and subprocessors. The memory is coupled to the CPU. The memory or computer-readable medium may be one or more readily available memory devices, such as random access memory, read-only memory, hard disk, or any other form of local or remote digital storage. The support circuit may be coupled to the CPU to support the processor in a conventional manner. The circuit includes a cache, a power supply, a clock circuit, an input / output circuit system, and related subsystems and the like. Substrate processing instructions are generally stored in the memory as software routines, which are generally referred to as recipes. The software routines may also be stored and / or executed by a second CPU (not shown) away from the hardware controlled by the CPU. The software routines, when executed by the CPU, transform a general-purpose computer into a special-purpose computer (controller) that controls apparatus operations and / or system operations (such as for shield conveyance, substrate conveyance, and deposition source rotation). Although the methods and / or processes of the present disclosure are discussed as being implemented as software routines, some of the method steps disclosed in the present disclosure may be implemented in hardware and by a software controller. As such, embodiments of the present invention may be implemented in software executed on a computer system and in hardware implemented as an application specific integrated circuit or other type of hardware, or in a combination of software and hardware.

[0040] The controller may execute or implement a method of processing a substrate, in particular in an inline substrate processing system. The controller may also execute or implement a method of manufacturing a layer stack for a display on a large area substrate. The method of manufacturing a layer stack for a display on a large area substrate includes a method of processing a substrate in an inline processing system according to any of the embodiments described herein, wherein a first layer of the layer stack is deposited by a first deposition source, and a second layer of the layer stack is deposited by a second deposition source.

[0041] According to an embodiment, an apparatus and / or system for processing a substrate according to any of the methods described herein is provided. The apparatus and / or system may include a controller 180. The controller includes a processor and a memory storing instructions that, when executed by the processor, cause the apparatus to perform a method according to an embodiment of the present disclosure.

[0042] According to an embodiment, a substrate processing system for processing a plurality of substrates is provided. The substrate processing system comprises: one or more vacuum chambers; at least a first deposition source and a second deposition source, the first deposition source and the second deposition source being provided in the one or more vacuum chambers, the first deposition source providing a first deposition area in a first angular direction, and the second deposition source providing a second deposition area; a substrate transport track, the substrate transport track being configured to move a first substrate of a plurality of substrates through a first deposition area and a second deposition area by translation; a shield transport track, the shield transport track being configured to move a shield by translation; and a controller, the controller having a memory including instructions and having a processor, wherein the instructions, when executed by the processor, cause the substrate processing system to perform a method according to any one of the embodiments described herein.

[0043] According to an embodiment, a substrate processing system for processing a plurality of substrates is provided. The substrate processing system includes: one or more vacuum chambers; and at least a first deposition source and a second deposition source, the first deposition source and the second deposition source being provided in the one or more vacuum chambers. The first deposition source provides a first deposition area in a first angular direction, and the second deposition source provides a second deposition area. The substrate processing system further includes at least a first idle shield associated with the first deposition source, the first idle shield being configured to block the evaporated material in the second angular direction of the first deposition source; a substrate transport track, the substrate transport track being configured to move a first substrate of a plurality of substrates through the first deposition area and the second deposition area by translation; and a shield transport track, the shield transport track being between the substrate transport track and the first deposition source, the shield transport track being configured to move the shield back and forth between a first shield position of the first deposition area and a second shield position of the first deposition area by translation. According to some embodiments, the first deposition source may be in a fixed position along the substrate transport track direction. In particular, the first deposition source may be rotatable in a fixed position of the first deposition source.

[0044] According to some embodiments that can be combined with other embodiments described herein, the substrate processing system can further include at least a second idle shield, the second idle shield being associated with the second deposition source, the second idle shield being configured to block evaporated material in a second angular direction of the second deposition source, wherein the shield transport track extends toward the second deposition source between the substrate transport track and the second deposition source, and the shield transport track is configured to move the additional shield back and forth between a first shield position of the second deposition area and a second shield position of the second deposition area by translation. For example, the second deposition source can be in a fixed position along the substrate transport track direction, in particular wherein the second deposition source is rotatable in the fixed position of the second deposition source.

[0045] According to some embodiments, which can be combined with other embodiments described herein, the substrate carrier can be an electrostatic chuck (E-chuck), which provides an electrostatic force to hold the substrate and optionally the mask at the substrate carrier, and in particular at the support surface. For example, the substrate carrier includes an electrode arrangement configured to provide an attractive force acting on the substrate.

[0046] The embodiments described herein may be used to deposit materials (such as organic materials, inorganic materials, or metallic materials) on large area substrates, for example for use in OLED display manufacturing. Specifically, the substrate for which the structure and method according to the embodiments described herein are provided may be a large area substrate. For example, a large area substrate may be a substrate having a thickness of about 0.67 m 2 The surface area of ​​GEN 4.5 is about 1.4m 2 The surface area of ​​GEN 5 is about 4.29m 2 The surface area of ​​GEN 7.5 is about 5.7m 2 (2.2m x 2.5m) corresponding to the GEN 8.5 or even with about 8.7m 2 (2.85 m x 3.05 m) surface area corresponding to GEN 10. Even larger generations such as GEN 11 and GEN 12 and corresponding surface areas can be similarly realized. Half-sized GEN generations can also be provided in OLED display manufacturing.

[0047] According to some embodiments that may be combined with other embodiments described herein, the substrate thickness may be from 0.1 mm to 1.8 mm. The substrate thickness may be about 0.9 mm or less, such as 0.5 mm. The term "substrate" as used herein may particularly include substantially non-flexible substrates, such as glass plates or other substrates. However, the present disclosure is not limited thereto, and the term "substrate" may also include flexible substrates, such as coils or foils. The term "substantially non-flexible" should be understood to be distinguished from "flexible". Specifically, a substantially non-flexible substrate may have a certain degree of flexibility, such as a glass plate having a thickness of 0.9 mm or less (such as 0.5 mm or less), wherein the substantially non-flexible substrate has a small flexibility compared to a flexible substrate.

[0048] As described above, according to some embodiments, the shield and the substrate or the shield carrier and the substrate carrier, respectively, can be moved synchronously with each other. This is possible in particular for a symmetrical arrangement of the shield and the hole 122 that substantially corresponds to the size of the substrate. According to some embodiments, which can be combined with other embodiments described herein, the shield and the substrate can be moved independently of each other and at least partially at different speeds.

[0049] According to some embodiments that can be combined with other embodiments described herein, the substrate can be provided on a substrate carrier, and the shield can be provided on a shield carrier, that is, a separate carrier can be provided, in particular with independent position control. Accordingly, the carrier can be dynamically moved during deposition. When the source does not move, the edge of the substrate and the shield can move relative to each other. Compared with other implementations, the amount of edge exclusion can be reduced to, for example, half the width, compared with having a fixed shield-carrier relationship and, for example, moving the source. For example, the distance from the shield to the substrate, in particular in the horizontal direction (i.e., the edge exclusion width), can be reduced to 10 mm or less. According to some embodiments that can be combined with other embodiments described herein, the shield position relative to the substrate can be dynamically adjusted. Accordingly, by adjusting the relative position, both carrier movement and part tolerance can be provided within such a range.

[0050] According to some embodiments, which can be combined with other embodiments described herein, methods according to the present disclosure can reduce edge exclusion distances of dynamic deposition systems by dynamically adjusting shield carrier position differences (particularly entering and exiting a deposition zone or processing area) with reference to substrate position.

[0051] Figure 4A and Figure 4BThe shield 220 is shown with respect to the adjustment of the relative position between the substrate 210. The substrate may be supported on a substrate carrier 202. In addition, the shield 220 may be supported on a shield carrier (not shown). A protected edge region 420 at the edge of the substrate is shown relative to the plume 410 of material evaporated from the deposition source 110. Figure 4A and Figure 4B As shown in , plume 410 may be asymmetric. Figure 4A 2 , in which a relative position 430 between the substrate 210 and the shield 220 is provided in a first position of the substrate 210 relative to the plume. Due to the asymmetry of the plume, the relative position 430 between the substrate 210 and the shield 220 changes in order to maintain the same protected edge area 420. Accordingly, moving the shield and the substrate independently of each other allows for improved control of the size of the protected edge area.

[0052] Figure 5A A first example of a shield 220 is shown. The shield 220 has a shield body 520 having an opening 522. According to some embodiments, the opening 522 may substantially correspond to the size of the substrate. According to some embodiments that may be combined with other embodiments described herein, the shield may have an opening that is 0 mm to 15 mm smaller than the substrate size on a first substrate size and a second substrate size that is different from the first substrate size. If the opening is 0 mm smaller than the substrate, i.e., the openings are the same size, the substrate carrier is protected from being coated. If the opening is a few millimeters smaller than the substrate size, the edge portions of the substrate carrier and the substrate may be protected from being coated.

[0053] Figure 5B Another example of a shield 220 is shown. The opening 524 in the shield body 520 has a vertical orientation relative to the reference 220 in one direction, particularly in the vertical direction. Figure 5A The shield may have an opening 524 having a size similar to that of the opening 522 described above. In a second direction, in particular in a horizontal direction, i.e. in the carrier movement direction, the size of the opening 522 is smaller than the substrate size. According to some embodiments, which can be combined with other embodiments described herein, the shield may have an opening that is 0 mm to 15 mm smaller than the substrate size in a first substrate dimension and is smaller than the substrate size in a second substrate dimension extending in a horizontal direction. For example, the size of the opening 524 in the horizontal direction may correspond to the width of the plume 410 of the evaporated material.

[0054] exist FIG. 6A to FIG. 6E The relative movement of the shield 220, substrate 210, and material plume 410 is shown in FIG. Fig. 6AIn the embodiment, material (i.e., plume 410 of material) is directed onto the shield body of shield 220. The substrate carrier is protected. Opening 524 and substrate 210 have a first relative position relative to each other. Both the substrate carrier and the movable shield may be accelerated, for example, to a constant speed. The substrate and shield are moved until opening 524 is positioned to allow the evaporated material to pass through the opening. For example, opening 524 may be centered relative to plume 410 of evaporated material. This is Figure 6B As shown in Figure 6C As shown in , the substrate carrier may continue to move, for example, at a constant speed. The movable shield may slow down and may stop or move at a reduced speed. The substrate carrier continues to move until reaching a position such as Fig.6D Thereafter, the movable shield may be accelerated to move with the substrate carrier, for example at a constant speed and / or at the same speed as the substrate carrier. This results in Fig. 6E , wherein the substrate carrier and the movable shield may be stopped.

[0055] In view of the above, embodiments of the present disclosure may provide one or more of the following advantages. A movable shield may be provided to protect the edges of the substrate carrier and / or substrate. Particle generation may be reduced. Since the movable shield is associated with the deposition source, material mixing may be reduced or avoided. The process of separate shields (e.g., for each deposition source) further allows source-specific scanning speeds, i.e., source-specific translational movement speeds through the deposition area. The deposition rate of the deposition source may be adjusted by the scanning speed.

[0056] While the foregoing is directed to certain embodiments, other and further embodiments may be devised without departing from the scope, and the scope is determined by the claims that follow.

Claims

1. A substrate processing system for processing a plurality of substrates, the substrate processing system comprising: one or more vacuum chambers; at least a first deposition source, the first deposition source being provided in the one or more vacuum chambers, the first deposition source providing a first deposition region in a first angular direction; at least a first idle shield, the first idle shield being associated with the first deposition source, the first idle shield being configured to block evaporated material emitted in a second angular direction of the first deposition source; a substrate transport track configured to move a first substrate of the plurality of substrates through the first deposition area by translation; and A shield transport track is between the substrate transport track and the first deposition source, the shield transport track being configured to move a shield back and forth between a first shield position of the first deposition area and a second shield position of the first deposition area by translation. 2 . The substrate processing system of claim 1 , wherein the first deposition source is along a substrate transport track direction and in a fixed position relative to the first deposition source. 3 . The substrate processing system of claim 2 , wherein the first deposition source is rotatable in the fixed position of the first deposition source.

4. The substrate processing system according to any one of claims 1 to 3, further comprising: A second deposition source is provided in the one or more vacuum chambers, the second deposition source provides a second deposition area, wherein the substrate transport track is configured to move a first substrate of the plurality of substrates through the first deposition area and the second deposition area by translation.

5. The substrate processing system according to any one of claims 4, further comprising: at least a second idle shield, the second idle shield being associated with the second deposition source, the second idle shield being configured to block evaporated material in a second angular direction of the second deposition source, wherein the shield transport track extends toward the second deposition source between the substrate transport track and the second deposition source, and the shield transport track being configured to move an additional shield back and forth between a first shield position of the second deposition area and a second shield position of the second deposition area by translation. 6 . The substrate processing system of claim 5 , wherein the second deposition source is in a fixed position along a substrate transport track direction and relative to the second deposition source, and wherein the second deposition source is rotatable in the fixed position of the second deposition source.

7. A method for processing a first substrate among a plurality of substrates in an inline substrate processing system, the method comprising: moving the first substrate on a first substrate carrier along a substrate transport track in one or more vacuum chambers by translation into a first substrate position associated with a first deposition source; moving a shield by translation into a first shield position configured to protect at least a portion of at least one of the first substrate to be coated by the first deposition source and the first substrate carrier; moving the first substrate and the shield on the first substrate carrier by translation, wherein the first substrate is moved through a first deposition area of ​​the first deposition source for depositing material on the first substrate, wherein the first substrate is moved to a second substrate position, and the shield is moved to a second shield position, the second shield position being configured to protect at least a portion of at least one of the first substrate and the first substrate carrier to be coated by the first deposition source; and The shield is moved from the second shield position back to the first shield position by translation.

8. The method of claim 7, wherein the shield has an opening at a first substrate size and a second substrate size different from the first substrate size that is 0 mm to 15 mm smaller than the substrate size.

9. The method according to any one of claims 7 to 8, wherein the shield has an opening in a first substrate dimension that is 0 mm to 15 mm smaller than the substrate size and has an opening in a second substrate dimension extending in the carrier moving direction that is smaller than the substrate size and larger than the plume width of the first deposition source.

10. The method according to any one of claims 7 to 9, wherein the shield and the first substrate are moved independently of each other and at least partially at different speeds.

11. The method according to any one of claims 7 to 10, further comprising: Material is deposited on the first substrate while moving the first substrate through the first deposition region of the first deposition source, the first deposition source being in a first angular direction.

12. The method according to claim 11, further comprising: The first deposition source is rotated from the first angular orientation to a second angular orientation, wherein in the second angular orientation, evaporated material is blocked by an idle shield.

13. The method according to any one of claims 7 to 12, further comprising: The first substrate is moved toward a second deposition region of a second deposition source by translation.

14. The method according to claim 13, further comprising: moving a second substrate on a second substrate carrier and the shield by translation, wherein the second substrate is moved through the first deposition region of the first deposition source for depositing material on the second substrate; and The first substrate and the further shield are moved on the first substrate carrier by translation, wherein the first substrate is moved through the second deposition region of the second deposition source for depositing material on the first substrate.

15. A method of manufacturing a layer stack for a display on a large area substrate, the method comprising: The method for processing a substrate in an inline processing system according to any one of claims 7 to 14, wherein at least a first layer of the layer stack is deposited by the first deposition source and a second layer of the layer stack is deposited by the second deposition source.

16. A substrate processing system for processing a plurality of substrates, the substrate processing system comprising: one or more vacuum chambers; at least a first deposition source provided in the one or more vacuum chambers, the first deposition source providing a first deposition region in a first angular direction; a substrate transport track configured to move a first substrate of the plurality of substrates through the first deposition area by translation; a shield transport track configured to move shields by translation; and A controller having a memory including instructions and having a processor, wherein the instructions, when executed by the processor, cause the substrate processing system to perform the method of any one of claims 7 to 15.

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