Substrate processing apparatus, substrate processing method, method for manufacturing semiconductor device, and program

Abstract

Provided is a technique capable of suppressing variations in the supply amount of a processing gas in a substrate surface. The present invention is provided with: a processing chamber for processing a substrate; a substrate support unit that supports the substrate; an exhaust system that exhausts the processing chamber; a first flow path that supplies a gas to the processing chamber along an inner wall surface of the processing chamber; and a second flow path that supplies a gas to the processing chamber from a side of the first flow path.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a substrate processing method, a method for manufacturing a semiconductor device, and a program. Background Art

[0002] Patent Document 1 discloses a substrate processing apparatus configured to supply a processing gas in a direction toward the outer periphery of a substrate rather than a direction toward the center of the substrate.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2020-136301 Summary of the invention

[0006] Problems to be solved by the invention

[0007] A gas vortex may be generated around the inner wall of a processing chamber for processing a substrate, and in this case, a supply amount of the processing gas may be uneven between the center side and the outer peripheral side of the substrate.

[0008] The present disclosure provides a technology capable of suppressing the supply amount variation of a processing gas within a substrate surface.

[0009] Means for solving problems

[0010] According to one embodiment of the present disclosure, a technology is provided, comprising:

[0011] a processing chamber that processes a substrate;

[0012] a substrate supporting portion that supports the substrate;

[0013] an exhaust system for exhausting the processing chamber;

[0014] a first flow path that supplies gas to the processing chamber along an inner wall surface of the processing chamber; and

[0015] The second flow path supplies gas to the processing chamber from a side of the first flow path.

[0016] Effects of the Invention

[0017] According to the present disclosure, it is possible to suppress the variation in the supply amount of the processing gas within the substrate surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a longitudinal sectional view schematically showing a substrate processing apparatus according to one embodiment of the present disclosure.

[0019] Figure 2 It is a cross-sectional view showing a gas supply unit according to one embodiment of the present disclosure.

[0020] Figure 3 It is a longitudinal sectional view showing a gas supply unit according to one embodiment of the present disclosure.

[0021] Figure 4 This is a schematic configuration diagram of a controller of a substrate processing apparatus according to one embodiment of the present disclosure, and is a diagram showing a control system of the controller in the form of a block diagram.

[0022] Figure 5 This is a flowchart for explaining a substrate processing flow according to one embodiment of the present disclosure.

[0023] Figure 6 It is a transverse cross-sectional view showing a gas supply unit according to a second embodiment of the present disclosure.

[0024] Figure 7 It is a cross-sectional view showing a gas supply unit according to a third aspect of the present disclosure.

[0025] Figure 8 (A) is a plan view showing an operation of storing a nozzle used as a gas supply unit according to the third aspect of the present disclosure in a storing portion. Figure 8 (B) means Figure 8 (A) is a plan view of a state in which the nozzle is stored in the storage portion.

[0026] Fig. 9 It is a cross-sectional view showing a gas supply unit according to a third aspect of the present disclosure.

[0027] Fig.10 (A) and Fig.10 (B) is a diagram showing a modified example of the gas supply unit according to one embodiment of the present disclosure. DETAILED DESCRIPTION

[0028] The following mainly refers to Figures 1 to 10 One mode of the present disclosure is described. In addition, the drawings used in the following description are all schematic, and the dimensional relationship of each element, the ratio of each element, etc. shown in the drawings may not be consistent with the actual situation. In addition, the dimensional relationship of each element, the ratio of each element, etc. may not be consistent between multiple drawings.

[0029] (1) Structure of substrate processing apparatus

[0030] use Figure 1 The structure of the substrate processing apparatus 10 will be described.

[0031] The substrate processing apparatus 10 includes a reaction tube housing chamber 206, and the reaction tube housing chamber 206 includes: a cylindrical reaction tube 210 extending in the vertical direction, a heater 211 as a heating unit (also referred to as a furnace body) provided on the outer periphery of the reaction tube 210, a gas supply structure 212 as a gas supply unit, and a gas exhaust structure 213 as a gas exhaust unit. The gas supply unit includes an upstream side rectifying unit 214 described later, etc. In addition, the gas exhaust unit includes a downstream side rectifying unit 215 described later, etc.

[0032] The gas supply structure 212 is disposed on the side of the reaction tube 210 and upstream in the gas flow direction. Gas is supplied from the gas supply structure 212 to the reaction tube 210, that is, the processing chamber 201 from the outside of the heater 211, and gas is supplied from the horizontal direction to the substrate S. The gas exhaust structure 213 is disposed on the side of the reaction tube 210 and downstream in the gas flow direction. The gas in the reaction tube 210 is exhausted from the gas exhaust structure 213. The gas exhaust structure 213 is disposed to be opposite to the gas supply structure 212 across the reaction tube 210.

[0033] An upstream rectifying section 214 is provided on the upstream side of the reaction tube 210 to regulate the flow of the gas supplied from the gas supply structure 212. A downstream rectifying section 215 is provided on the downstream side of the reaction tube 210 to regulate the flow of the gas discharged from the reaction tube 210. The lower end of the reaction tube 210 is supported by a manifold 216.

[0034] The reaction tube 210, the upstream rectifying section 214, and the downstream rectifying section 215 are connected and continuous in the horizontal direction, and are formed of materials such as quartz, SiC, etc. They are composed of heat-transmitting components that transmit the heat radiated from the heater 211. The heat of the heater 211 heats the substrate S and the gas.

[0035] The upstream side rectifying section 214 has a housing 227 and a dividing plate 226. The dividing plate 226 extends in the horizontal direction. The horizontal direction mentioned here means the side wall direction of the housing 227. A plurality of dividing plates 226 are arranged in the vertical direction. The dividing plate 226 is fixed to the side wall of the housing 227, and is configured so that the gas does not exceed the dividing plate 226 and move to the adjacent area below or above. By setting it not to exceed, the airflow described later can be reliably formed.

[0036] The partitioning plates 226 are provided at positions corresponding to the respective substrates S in a state where the substrates S are supported by the substrate support 300 .

[0037] The downstream side rectifying part 215 is configured such that when the substrate S is supported by the substrate support 300 , the top is higher than the uppermost substrate S and the bottom is lower than the lowermost substrate S disposed on the substrate support 300 . The substrate support 300 is used as a substrate supporting part that supports a plurality of substrates S.

[0038] The downstream side rectifying section 215 has a shell 231 and a dividing plate 232. The dividing plate 232 extends in the horizontal direction. The horizontal direction mentioned here means the side wall direction of the shell 231. In addition, a plurality of dividing plates 232 are arranged in the vertical direction. The dividing plate 232 is fixed to the side wall of the shell 231, and is configured so that the gas will not exceed the dividing plate 232 and move to the adjacent area below or above. By setting it not to exceed, the airflow described later can be reliably formed.

[0039] The upstream rectifying section 214 communicates with the space of the downstream rectifying section 215 via the processing chamber 201. The top of the housing 227 is configured to be at the same height as the top of the housing 231. The bottom of the housing 227 is configured to be higher than the bottom of the housing 231.

[0040] The partition plates 232 are disposed at positions corresponding to the substrates S and at positions corresponding to the partition plates 226, respectively, when the substrates S are supported on the substrate support 300. The corresponding partition plates 226 and partition plates 232 are preferably disposed at the same height. Furthermore, when the substrates S are processed, the height of the substrates S is preferably aligned with the heights of the partition plates 226 and 232.

[0041] By setting the dividing plate 226 and the dividing plate 232, the pressure loss can be made uniform in the vertical direction upstream and downstream of each substrate S. Therefore, a horizontal airflow that suppresses flow in the vertical direction can be reliably formed on the dividing plate 226, the substrate S, and the dividing plate 232.

[0042] The gas exhaust structure 213 is provided downstream of the downstream rectifying section 215. The gas exhaust structure 213 is mainly composed of a housing 241 and an exhaust hole 244. The exhaust hole 244 is formed downstream and below or in the horizontal direction of the housing 241. The exhaust pipe 281 is connected to the processing chamber 201 via the exhaust hole 244.

[0043] The gas exhaust structure 213 is connected to the space of the downstream side rectifying section 215. The housing 231 and the housing 241 are highly continuous structures. The top of the housing 231 is configured to be at the same height as the top of the housing 241, and the bottom of the housing 231 is configured to be at the same height as the bottom of the housing 241. The thermocouple 500 can be set at the bottom of the housing 231.

[0044] The gas exhaust structure 213 is provided in the lateral direction of the reaction tube 210 , and is a lateral exhaust structure for exhausting gas from the lateral direction of the substrate S.

[0045] The processing chamber 201 includes: a processing area A for processing the substrate S; and a heat insulating area B located below the processing area A. The heat insulating portion 502 is disposed when the substrate support 300 is carried into the processing chamber 201. The inert gas supplied to the heat insulating portion 502 and the ambient gas (including reaction byproducts) of the heat insulating area B can be prevented from flowing into the processing area A. The gas flow passing through each substrate S is prevented from flowing in the vertical direction and is formed in the horizontal direction toward the gas exhaust structure 213.

[0046] That is, the gas passing through the downstream side rectifying portion 215 is exhausted from the exhaust hole 244. At this time, since the gas exhaust structure 213 does not have a structure such as a partition plate, an airflow including a vertical direction is formed toward the exhaust hole 244.

[0047] The substrate support 300 includes a partition plate support portion 310 and a base portion 311, and is accommodated in the reaction tube 210. The substrate S is arranged directly below the inner wall of the top plate of the reaction tube 210. In addition, the substrate support 300 performs the following processes: a process of transferring the substrate S through a substrate transfer port (not shown) in the transfer chamber 217 by a vacuum transfer robot; and a process of transferring the transferred substrate S to the inside of the reaction tube 210 to form a thin film on the surface of the substrate S. The substrate transfer port is provided, for example, at the side wall of the transfer chamber 217.

[0048] A plurality of disk-shaped partition plates 314 are fixed at a predetermined interval to the partition plate support portion 310. In addition, the partition plates 314 are configured to support the substrate S at a predetermined interval between the partition plates 314. The partition plates 314 are arranged directly below the substrate S and are arranged at either or both of the upper and lower parts of the substrate S. The partition plates 314 block the space between the substrates S.

[0049] The plurality of substrates S are stacked at a predetermined interval in the vertical direction and placed on the substrate support 300. The predetermined interval between the plurality of substrates S placed on the substrate support 300 is the same as the vertical interval between the partition plates 314 fixed to the partition plate support 310. In addition, the diameter of the partition plates 314 is formed to be larger than the diameter of the substrates S.

[0050] The substrate support 300 supports a plurality of substrates S, for example, five substrates S, in multiple stages in the vertical direction (also referred to as the vertical direction). In addition, an example in which five substrates S are supported by the substrate support 300 is shown here, but the present invention is not limited thereto. For example, the substrate support 300 may be configured to support about 5 to 50 substrates S.

[0051] In addition, in this specification, the expression of a numerical range such as "5 to 50 sheets" means that the lower limit and the upper limit are included in the range. Therefore, for example, "5 to 50 sheets" means "more than 5 sheets and less than 50 sheets." The same applies to other numerical ranges.

[0052] The substrate support 300 is driven by the vertical driving mechanism 400 in the vertical direction between the reaction tube 210 and the transfer chamber 217 and in the rotation direction of the substrate S supported by the substrate support 300 around the center. That is, the vertical driving mechanism 400 serves as a rotating unit that rotates the substrate support 300 .

[0053] A heat insulating portion 502 is provided below the substrate support 300. An exhaust hole 503 is formed below the processing chamber 201 of the reaction tube 210 and on the side of the heat insulating portion 502 when the substrate support 300 is loaded into the reaction tube 210. The exhaust hole 503 is connected to an exhaust pipe 504 that exhausts the atmosphere in the heat insulating region.

[0054] The transfer chamber 217 is provided at the lower part of the reaction tube 210 across the manifold 216. In the transfer chamber 217, the substrate S is placed (also referred to as mounted) on a substrate support (hereinafter, sometimes also referred to as a wafer boat) 300 via a substrate carrying port by a vacuum transfer robot, or the substrate S is taken out from the substrate support 300 by a vacuum transfer robot.

[0055] The transfer chamber 217 can accommodate a vertical direction driving mechanism 400 for driving the substrate support 300 and the partition plate support 310 in the vertical direction. Figure 1 , the state in which the substrate support 300 is raised by the vertical direction driving mechanism 400 and accommodated in the reaction tube 210 is shown. In addition, in the state in which the substrate support 300 is accommodated in the reaction tube 210, the heat insulating portion 502 is arranged at the lower part in the reaction tube 210, and the heat insulating portion 502 constitutes the heat insulating region B provided at the lower part of the processing chamber 201. As a result, the heat conduction to the transfer chamber 217 in the processing chamber 201 is reduced.

[0056] The vertical driving mechanism unit 400 includes a rotation driving mechanism 430 for rotating the substrate support 300 and the partition plate support 310 , and a boat vertical mechanism 420 for driving the substrate support 300 in the vertical direction relative to the partition plate support 310 .

[0057] The rotation drive mechanism 430 and the wafer boat up-and-down mechanism 420 are fixed to the base flange 401 , and the base flange 401 serves as a cover body supported on the base plate 402 by the side plates 403 .

[0058] An annular space is formed between the support portion 441 and the support material 440. The annular space below the heat insulating portion 502 is connected to the gas supply pipe 271. An inert gas is supplied from the gas supply pipe 271, and the inert gas is supplied to the heat insulating portion 502 from below.

[0059] An O-ring 446 is provided on the upper surface of the base flange 401. Figure 1As shown, the upper surface of the susceptor flange 401 is driven by the up-and-down driving motor 410 to rise to a position where it contacts the transfer chamber 217 , thereby making it possible to keep the interior of the reaction tube 210 airtight.

[0060] Next, use Figure 2 , Figure 3 The details of the gas supply structure 212 will be described.

[0061] like Figure 2 As described, the housing 227 and the housing 231 are connected to the upstream and downstream sides of the cylindrical reaction tube 210 via the linear widening portion 230. The widening portion 230 is configured to expand from the housing 227 and the housing 231 toward the processing chamber 201. The reaction tube 210 may include the widening portion 230.

[0062] A flat plate-shaped partition wall 228 as a first partition wall is provided substantially at the center of the partition plate 226 in the housing 227 and substantially perpendicular to the partition plate 226. The partition wall 228 includes a wall 228a extending substantially parallel to the housing 227 and a wall 228b extending from the wall 228a in a curved manner substantially parallel to the widening portion 230. That is, the downstream side of the partition wall 228 is configured as the inner wall surface of the reaction tube 210 on the downstream side along the rotation direction of the substrate S.

[0063] The partition wall 228 is configured such that the center O of the substrate S is arranged on a line extending the wall 228a toward the processing chamber 201, and the end of the substrate S is arranged on a line extending the wall 228b toward the processing chamber 201. That is, the partition wall 228 is configured such that the range extending the wall 228b toward the processing chamber 201 includes the center point O of the substrate S.

[0064] The first flow path 227a and the second flow path 227b are constituted by the shell 227, the widening portion 230, the dividing plate 226 and the partition wall 228, and the first flow path 227a and the second flow path 227b are constituted so that at least a part of them is separated from each other by the partition wall 228. The flow path is formed by separating from each other by the flat partition wall 228, thereby, the flow paths are close to each other, and the overall lateral width can be narrowed while maintaining the lateral width of each flow path, and the coverage area (footprint) can be improved. In addition, by using the widening portion 230 as a part of the flow path, gas can be supplied to a wider area where the substrate S is configured, so that the in-plane uniformity of the processing of the substrate S can be improved. In addition, the first flow path 227a and the second flow path 227b are arranged to be arranged horizontally approximately horizontally relative to the substrate S. The first flow path 227a is arranged on the downstream side of the rotation direction of the substrate S of the second flow path 227b. The vertical direction driving mechanism unit 400 is configured to rotate the substrate S in a direction along the flow direction of the gas supplied from the first flow path 227 a on the upper surface of the substrate S.

[0065] The first flow path 227a extends along the inner wall surface of the reaction tube 210 on the downstream side of the rotation direction of the substrate S to form a gas flow path. The first flow path 227a supplies gas to the processing chamber 201 along the inner wall surface of the reaction tube 210 on the downstream side of the rotation direction of the substrate S.

[0066] In addition, the extension direction of the second flow path 227b includes the center of the reaction tube 210, and the gas flow path is formed in a manner along the inner wall surface of the reaction tube 210 on the upstream side of the rotation direction of the substrate S. Therefore, the second flow path 227b is configured to supply gas to the processing chamber 201 from the side of the first flow path 227a toward the center of the reaction tube 210 along the inner wall surface of the reaction tube 210 on the upstream side of the rotation direction of the substrate S.

[0067] As described above, by supplying gas in two directions in the processing chamber 201 to form two flow paths, gas eddy currents can be suppressed on the inner wall surface of the reaction tube 210 on the downstream side of the first flow path 227a and the second flow path 227b. That is, gas eddy currents around the inner wall surface of the reaction tube 210 on the upstream side and the downstream side in the rotation direction of the substrate S can be suppressed.

[0068] Here, the gas supplied from the first flow path 227a that supplies the gas from the inner wall surface of the reaction tube 210 on the downstream side in the rotation direction of the substrate S is more likely to increase in temperature and to be thermally decomposed more easily than the gas supplied from the second flow path 227b that supplies the gas from the inner wall surface of the reaction tube 210 on the center of the substrate S and the upstream side in the rotation direction of the substrate S. By arranging the first flow path 227a on the downstream side in the rotation direction of the second flow path 227b, it is possible to suppress the thermally decomposed gas from flowing to the vicinity of the outlet of the first flow path 227a and the vicinity of the outlet of the second flow path 227b as the substrate S rotates.

[0069] The first flow path 227a is connected to the gas supply pipe 251 via the distribution unit 125. The second flow path 227b is connected to the gas supply pipe 261 via the distribution unit 125.

[0070] The gas supply pipe 251 is provided with a first processing gas source 252a, a flow controller (also referred to as a flow control unit) namely a mass flow controller (MFC) 253a, and an opening and closing valve namely a valve 254a in order from the upstream direction.

[0071] The downstream side of the valve 254a in the gas supply pipe 251 is connected to the gas supply pipes 255a and 259a. The second processing gas source 256a, MFC 257a and valve 258a are sequentially provided in the gas supply pipe 255a from the upstream direction. The inert gas source 260a, MFC 261a and valve 262a are sequentially provided in the gas supply pipe 259a from the upstream direction.

[0072] The gas supply pipe 261 is provided with a first processing gas source 252 b , an MFC 253 b , and a valve 254 b in this order from the upstream direction.

[0073] The downstream side of the valve 254b in the gas supply pipe 261 is connected to the gas supply pipes 255b and 259b. The second processing gas source 256b, MFC 257b and valve 258b are sequentially provided in the gas supply pipe 255b from the upstream direction. The inert gas source 260b, MFC 261b and valve 262b are sequentially provided in the gas supply pipe 259b from the upstream direction.

[0074] The first supply system 350 mainly includes a gas supply pipe 251, MFC 253a, valve 254a, gas supply pipe 255a, MFC 257a, valve 258a, gas supply pipe 259a, MFC 261a, and valve 262a for supplying gas to the processing chamber 201 through the first flow path 227a. In addition, the first processing gas source 252a, the second processing gas source 256a, and the inert gas source 260a may also be included in the first supply system 350.

[0075] The second supply system 360 mainly includes a gas supply pipe 261, MFC 253b, valve 254b, gas supply pipe 255b, MFC 257b, valve 258b, gas supply pipe 259b, MFC 261b, and valve 262b for supplying gas to the processing chamber 201 through the second flow path 227b. In addition, the first processing gas source 252b, the second processing gas source 256b, and the inert gas source 260b may also be included in the second supply system 360.

[0076] In addition, the first process gas source 252a and the first process gas source 252b may use a common first process gas source. In addition, the second process gas source 256a and the second process gas source 256b may use a common second process gas source. In addition, the inert gas source 260a and the inert gas source 260b may use a common inert gas source.

[0077] In addition, when the first process gas is supplied to the process chamber 201 through the first flow path 227a and the second flow path 227b, the first supply system 350 and the second supply system 360 may be referred to as a first process gas supply system. In addition, when the second process gas is supplied to the process chamber 201 through the first flow path 227a and the second flow path 227b, the first supply system 350 and the second supply system 360 may be referred to as a second process gas supply system.

[0078] Mainly, the inert gas supplied from the gas supply pipes 259a and 259b acts as a carrier gas for transporting the first processing gas or the second processing gas when supplying the first processing gas or the second processing gas, and acts as a purge gas for purging the gas retained in the reaction tube 210 during purging.

[0079] Next, use Figure 3 The positional relationship between the partition plate 226 and the substrate S will be described.

[0080] like Figure 3 As shown, a partition wall 228 is arranged between each partition plate 226 of the upstream side rectifying section 214. That is, it is configured so that the first flow path 227a and the second flow path 227b are respectively arranged for each partition plate 226. The substrate S supported by the substrate support 300 is arranged to be arranged approximately horizontally between the partition plates 314. In addition, each partition plate 226 and each partition plate 314 are arranged at the same height, and each substrate S is arranged on the downstream side of the approximately horizontal direction between the partition plates 226.

[0081] That is, when the substrate support 300 supports a plurality of substrates S, the partition plate 226 is disposed at positions corresponding to the respective substrates S in the housing 227, and the first flow path 227a and the second flow path 227b are provided at heights corresponding to the plurality of substrates S. Thus, a plurality of substrates S can be processed at one time, thereby improving production efficiency.

[0082] When there is a substrate S in the processing chamber 201, a processing gas is supplied from the first flow path 227a and the second flow path 227b on the side of the substrate S. The gas supplied from the first flow path 227a and the second flow path 227b is supplied to the surface of the substrate S. That is, from the perspective of the substrate S, the gas is supplied from the lateral direction of the substrate S. Here, the dividing plate 226 is a continuous structure extending in the horizontal direction and having no holes, so the movement of the main flow of the gas in the vertical direction can be suppressed. In addition, the gas supplied from each flow path forms a horizontal flow passing through the substrate S as shown by the arrow in the figure. Therefore, the gas flow through each substrate S is suppressed in the vertical direction, and is formed in the horizontal direction toward the gas exhaust structure 213.

[0083] Next, use Figure 1 The exhaust system will be described.

[0084] The exhaust pipe 281 is connected to a vacuum pump 284 as a vacuum exhaust device via a valve 282 as an on-off valve and an APC (Auto Pressure Controller) valve 283 as a pressure regulator (also referred to as a pressure regulator), and can perform vacuum exhaust so that the pressure in the reaction tube 210 becomes a predetermined pressure (also referred to as a vacuum degree). The exhaust pipe 281, the valve 282, and the APC valve 283 are collectively referred to as an exhaust system 280. In addition, the exhaust system 280 may also include a vacuum pump 284.

[0085] Next, use Figure 4 The controller as a control unit (also referred to as a control unit) will be described. The substrate processing apparatus 10 includes a controller 600 for controlling the operation of each unit of the substrate processing apparatus 10 .

[0086] Figure 4 600 is schematically shown. The controller 600 is configured as a computer having a CPU (Central Processing Unit) 601, a RAM (Random Access Memory) 602, a storage device 603 as a storage unit, and an I / O port 604. The RAM 602, the storage device 603, and the I / O port 604 can exchange data with the CPU 601 via an internal bus 605. Data transmission and reception within the substrate processing apparatus 10 is performed by instructions from a transmission and reception instruction unit 606 which is also a function of the CPU 601.

[0087] The controller 600 is provided with a network transceiver 683 connected to the host device 670 via a network. The network transceiver 683 can receive, from the host device 670, processing history information of the substrates S accommodated in the wafer boat, information on processing schedules, and the like.

[0088] The storage device 603 is composed of, for example, a flash memory, a HDD (Hard Disk Drive), etc. The storage device 603 stores processing conditions according to the type of substrate processing. That is, the control program for controlling the operation of the substrate processing apparatus 10, the process recipe recording the steps and conditions of the substrate processing, etc. are stored in the storage device 603 in a readable manner.

[0089] In addition, the process recipe is a combination of processes in the substrate processing step described later by the controller 600 so as to obtain a predetermined result, and functions as a program. Hereinafter, the process recipe, control program, etc. are also simply referred to as a program. In addition, when the term "program" is used in this specification, there is a case where only the process recipe alone is included, only the control program alone is included, or both are included. In addition, the RAM 602 is configured as a storage area (also called a work area) for temporarily storing programs, data, etc. read by the CPU 601.

[0090] The I / O port 604 is connected to each component of the substrate processing apparatus 10 , that is, the first supply system 350 and the second supply system 360 .

[0091] The CPU 601 is configured to read and execute a control program from the storage device 603, and to read a process recipe from the storage device 603 in accordance with an input of an operation command from the input / output device 681. The CPU 601 is configured to control the first supply system 350 and the second supply system 360 of the substrate processing apparatus 10 in accordance with the contents of the read process recipe.

[0092] CPU601 has a sending and receiving instruction unit 606. The controller 600 can constitute the controller 600 of this method by installing the program on a computer or the like using an external storage device (for example, a disk such as a hard disk, an optical disk such as a DVD, an optical magnetic disk such as an MO, a semiconductor memory such as a USB memory) 682 that stores the above-mentioned program. In addition, the unit for supplying the program to the computer is not limited to the case of supplying via the external storage device 682. For example, the program can also be supplied using a communication unit such as the Internet or a dedicated line, rather than via the external storage device 682. In addition, the storage device 603 and the external storage device 682 are configured as a computer-readable storage medium. Hereinafter, they are collectively referred to as storage media. In addition, in this specification, when using the term storage medium, there is a case where only the storage device 603 monomer is included, a case where only the external storage device 682 monomer is included, or a case where both are included.

[0093] (2) Substrate processing steps

[0094] Next, as one process of semiconductor manufacturing process, a process of forming a thin film on a substrate S using the substrate processing apparatus 10 having the above structure will be described. In the following description, the operations of the components constituting the substrate processing apparatus 10 are controlled by the controller 600 .

[0095] Here, use Figure 5 A film forming process in which a film is formed on the substrate S by using the first process gas and the second process gas and supplying them alternately will be described.

[0096] The term "substrate" used in this specification may refer to the substrate itself or to a laminate of a substrate and a predetermined layer or film formed on the surface thereof. The term "surface of a substrate" used in this specification may refer to the surface of a substrate itself or to the surface of a predetermined layer, etc., formed on a substrate. When "a predetermined layer is formed on a substrate" is stated in this specification, it may refer to directly forming a predetermined layer on the surface of the substrate itself or to forming a predetermined layer on a layer, etc., formed on a substrate. The term "substrate" used in this specification is synonymous with the term "wafer".

[0097] (S10)

[0098] The transfer chamber pressure adjustment step S10 will be described. Here, the pressure in the transfer chamber 217 is set to the same level as the pressure in the vacuum transfer chamber (not shown) adjacent to the transfer chamber 217.

[0099] (S11)

[0100] Next, the substrate carrying-in step S11 will be described.

[0101] When the transfer chamber 217 reaches the vacuum level, the substrate S starts to be transferred. When the substrate S reaches the vacuum transfer chamber, the gate valve is opened, and the vacuum transfer robot transfers the substrate S into the transfer chamber 217 .

[0102] At this time, the substrate support 300 is on standby in the transfer chamber 217, and the substrate S is transferred to the substrate support 300. When a predetermined number of substrates S are transferred to the substrate support 300, the vacuum transfer robot is retracted, and the substrate support 300 is raised by the vertical direction driving mechanism 400 to move the substrate S into the reaction tube 210, that is, into the processing chamber 201. A plurality of substrates S are moved into the processing chamber 201 in a state of being stacked in the vertical direction.

[0103] During the movement to the reaction tube 210 , the surface of the substrate S is positioned so as to be aligned with the heights of the partition plates 226 and 232 .

[0104] (S12)

[0105] Next, the heating step S12 will be described.

[0106] When the substrate S is loaded into the reaction tube 210 , that is, the processing chamber 201 , the pressure in the reaction tube 210 is controlled to a predetermined pressure, and the surface temperature of the substrate S is controlled to a predetermined temperature.

[0107] (S13)

[0108] Next, the film processing step S13 will be described. In the film processing step S13, according to the process recipe, the substrate S is stacked on the substrate support 300 and the substrate S is accommodated in the processing chamber, and the following steps are performed on the substrate S.

[0109] <Supplying the first processing gas, step S100>

[0110] First, the first process gas is supplied to the reaction tube 210. Specifically, the valves 254a and 254b are opened to supply the first process gas to the gas supply pipes 251 and 261. The first process gas is flow-regulated by the MFCs 253a and 253b, supplied to the reaction tube 210 via the distribution unit 125, the first flow path 227a, and the second flow path 227b, and discharged via the space on the substrate S, the downstream side rectifying unit 215, the gas exhaust structure 213, and the exhaust pipe 281. At this time, the valves 262a and 262b may also be opened to allow the inert gas to flow in the gas supply pipes 251 and 261.

[0111] The flow rate of the gas is different near the center of the reaction tube 210 and near the inner wall of the reaction tube 210. The controller 600 controls the first supply system 350 that supplies the gas along the inner wall surface of the reaction tube 210 and the second supply system 360 that supplies the gas near the center of the reaction tube 210. That is, the controller 600 controls the first supply system 350 and the second supply system 360 to control the ratio of the flow rate (also referred to as the supply amount) of the first processing gas supplied from the first flow path 227a and the second flow path 227b, respectively. In this way, by controlling the gas flow rate supplied near the inner wall of the reaction tube 210 and the gas flow rate supplied near the center of the reaction tube 210, the in-plane uniformity of the processing of the substrate S can be improved according to the substrate processing content.

[0112] At this time, the APC valve 283 is adjusted to set the pressure in the reaction tube 210 to, for example, 1 to 3990 Pa. Next, the temperature of the heater 211 is set so that the temperature of the substrate S is, for example, 100 to 1500° C., that is, a temperature between 400° C. and 800° C.

[0113] At this time, the first process gas is supplied in a horizontal direction from the side of the substrate S along the inner wall surface of the reaction tube 210 through the first flow path 227a connected to the inside of the reaction tube 210, and is exhausted through the exhaust pipe 281. At this time, the first process gas is simultaneously supplied in a horizontal direction from the side of the substrate S toward the vicinity of the center of the reaction tube 210 through the second flow path 227b connected to the inside of the reaction tube 210, and is exhausted through the exhaust pipe 281. In this way, the first process gas is supplied to the processing chamber 201 from the first flow path 227a and the second flow path 227b at the same time, thereby shortening the processing time compared with the case where the first process gas is supplied at different times.

[0114] The case where the control valve 254a and the valve 254b are opened and closed simultaneously has been described, but the opening and closing control may be performed using a time difference, or the opening and closing control may be performed partially simultaneously. That is, the first processing gas supplied from the first flow path 277a and the second flow path 277b is not limited to being supplied simultaneously, but may be supplied partially simultaneously, or may be supplied alternately at different times.

[0115] The first process gas supplied to the processing chamber 201 forms a gas flow in the upstream rectifying section 214, the space on the substrate S, and the downstream rectifying section 215. At this time, the first process gas is supplied to the substrate S without pressure loss on each substrate S, so that each substrate S can be processed uniformly. By supplying the first process gas from the gas supply structure 212 to the gas exhaust structure 213 in this way, a side flow of gas is formed in the processing chamber 201.

[0116] In addition, by using the first flow path 227a and the second flow path 227b, a high-speed gas flow is formed in the direction along the inner wall surface of the processing chamber 201 and a gas flow is supplied to the substrate S from the side thereof. Thus, the generation of vortexes can be suppressed and the first processing gas can be supplied to a wider range of the substrate S. As a result, the in-plane uniformity of processing the substrate S can be improved.

[0117] In addition, the first process gas is introduced into the first flow path 227a and the second flow path 227b from the outside of the heater 211, and is supplied to the process chamber 201. That is, the first flow path 227a and the second flow path 227b can supply the gas introduced from the outside of the heater 211 to the process chamber 201, wherein the heater 211 is arranged outside the process chamber 201. Therefore, it is possible to suppress the first process gas from being thermally decomposed before reaching the substrate S.

[0118] As the first processing gas, a raw material gas, such as a silicon (Si)-containing gas, can be used. As the Si-containing gas, for example, a gas containing Si and chlorine (Cl), i.e., disilicon hexachloride (Si 2 Cl 6 , hexachlorodisilane, referred to as: HCDS) gas, etc.

[0119] As the inert gas, for example, nitrogen (N 2 ), helium (He), argon (Ar), etc.

[0120] <Purge, step S101>

[0121] In this step, while valves 254a and 254b are closed to stop the supply of the first processing gas, valves 262a and 262b are opened to supply an inert gas as a purge gas into the gas supply pipes 251 and 261, and valve 282 of the exhaust pipe 281, APC valve 283, and valve 506 of the exhaust pipe 504 are kept open, and the reaction tube 210 is evacuated using the vacuum pump 284.

[0122] <Supplying the second processing gas, step S102>

[0123] After a predetermined time has passed since the start of the purge, the valves 262a and 262b are closed, and the valves 258a and 258b are opened to allow the second process gas to flow through the gas supply pipes 251 and 261. The second process gas is flow-regulated by the MFCs 257a and 257b, and is supplied to the reaction tube 210 through the distribution unit 125, the first flow path 227a, and the second flow path 227b, and is discharged through the space on the substrate S, the downstream side rectifying unit 215, the gas exhaust structure 213, and the exhaust pipe 281. At this time, the valves 262a and 262b may be opened to allow the inert gas to flow through the gas supply pipes 251 and 261.

[0124] At this time, the second process gas is supplied in a horizontal direction from the side of the substrate S along the inner wall surface of the reaction tube 210 through the first flow path 227a communicating with the inside of the reaction tube 210, and is exhausted through the exhaust pipe 281. At this time, the second process gas is supplied in a horizontal direction from the side of the substrate S toward the vicinity of the center of the reaction tube 210 through the second flow path 227b communicating with the inside of the reaction tube 210, and is exhausted through the exhaust pipe 281.

[0125] In this case, the inert gas may be supplied to the insulation region B via the inert gas supply pipe 271 . The inert gas supplied to the insulation region B is exhausted from the exhaust pipe 504 via the lower portion of the insulation 502 , the upper surface of the base flange 401 , and the exhaust hole 503 .

[0126] Here, the valve 258a and the valve 258b can be opened and closed simultaneously, or can be opened and closed by using a time difference, or can be opened and closed partially simultaneously. That is, the second processing gas supplied from the first flow path 277a and the second flow path 277b is not limited to being supplied simultaneously, but can be supplied partially simultaneously, or can be supplied alternately at different times.

[0127] As the second process gas, for example, a reaction gas that reacts with the first process gas, for example, a gas containing hydrogen (H) and nitrogen (N), can be used. As the gas containing H and N, for example, ammonia (NH 3 ), diazene (N 2 H 2 ) gas, hydrazine (N 2 H 4 ) Gas, N 3 H 8 Gas, etc.

[0128] <Purge, step S103>

[0129] In this step, valves 258a and 258b are closed to stop the supply of the second processing gas, and then valves 262a and 262b are opened to supply an inert gas as a purge gas to the gas supply pipes 251 and 261. While keeping the valve 282 of the exhaust pipe 281, the APC valve 283, and the valve 506 of the exhaust pipe 504 open, the reaction tube 210 is evacuated using the vacuum pump 284.

[0130] <Perform the specified number of times, step S104>

[0131] The above-mentioned cycle of step S100 to step S103 is performed sequentially and non-simultaneously for a predetermined number of times (n times, n is an integer greater than or equal to 1). Thus, a film of a predetermined thickness is formed on the substrate S. Here, for example, a silicon nitride (SiN) film is formed.

[0132] That is, while the substrate S carried into the processing chamber 201 is heated, the first processing gas and the second processing gas are alternately supplied to the processing chamber 201, and the first processing gas, the second processing gas, and the reaction by-products are exhausted from the exhaust pipe 281 connected to the processing chamber 201. At this time, the inert gas is supplied from below to the heat insulating portion 502 constituting the heat insulating region B provided below the processing chamber 201, and the inert gas is exhausted from the exhaust pipe 504 connected to the heat insulating region B.

[0133] (S14)

[0134] Next, the substrate unloading step S14 is described. In S14, the processed substrate S is unloaded to the outside of the transfer chamber 217 in a reverse process to the above-mentioned substrate loading step S11.

[0135] (S15)

[0136] Next, determination S15 is described. Here, it is determined whether the substrate has been processed a predetermined number of times. If it is determined that the substrate has not been processed a predetermined number of times, the process returns to the substrate loading step S11 to process the next substrate S. If it is determined that the substrate has been processed a predetermined number of times, the process ends.

[0137] In the above description, the gas flow is horizontal, but as long as the main flow of gas is formed in the horizontal direction as a whole, the gas flow may be diffused in the vertical direction as long as it does not affect the uniform processing of multiple substrates.

[0138] In addition, in the above, there are expressions such as the same, the same degree, equivalent, and equivalent, which of course include substantially the same meanings.

[0139] (3) Other methods

[0140] The above is a specific description of the present invention, but it is not limited to this, and various changes can be made without departing from the spirit of the present invention. For example, the following method can be used to make changes, and other parts can be changed. Figure 1 The substrate processing device shown in FIG. Figure 1 Elements that are substantially the same as those described in are denoted by the same reference numerals, and description thereof is omitted.

[0141] (Second method)

[0142] Figure 6 It is a diagram showing a gas supply structure 612 of a second embodiment.

[0143] On each partition plate 226 in the housing 227, a partition wall 228 and a partition wall 229 as a flat plate-shaped first partition wall are provided substantially perpendicularly to the partition plate 226. The partition wall 228 includes a wall 228a extending substantially parallel to the housing 227, and a wall 228b extending from the wall 228a in a curved manner substantially parallel to the widening portion 230. That is, the downstream side of the partition wall 228 is configured as the inner wall surface of the reaction tube 210 on the downstream side along the rotation direction of the substrate S.

[0144] In addition, the partition wall 229 includes: a wall 229a extending substantially parallel to the housing 227; and a wall 229b extending substantially parallel to the widened portion 230 on the side of the wall 229a opposite to the wall 228a, which is disposed line-symmetrically with the partition wall 228. That is, the downstream side of the partition wall 229 is configured as the inner wall surface of the reaction tube 210 on the upstream side along the rotation direction of the substrate S.

[0145] The first flow path 227a and the second flow path 227b are configured so that at least a part thereof is separated from each other by a partition wall 228. In addition, the second flow path 227b and the third flow path 227c are configured so that at least a part thereof is separated from each other by a partition wall 229.

[0146] The second flow path 227b is arranged on the side of the first flow path 227a, and the third flow path 227c is arranged on the side of the second flow path 227b. The first flow path 227a, the second flow path 227b and the third flow path 227c are arranged side by side approximately horizontally, and are arranged along the circumferential direction of the substrate S on the upstream side in the approximately horizontal direction relative to the substrate S. The first flow path 227a among the first flow path 227a, the second flow path 227b and the third flow path 227c is arranged on the most downstream side in the rotation direction of the substrate S. The third flow path 227c among the first flow path 227a, the second flow path 227b and the third flow path 227c is arranged on the most upstream side in the rotation direction of the substrate S. The second flow path 227b is arranged between the first flow path 227a and the second flow path 227b.

[0147] That is, the extension direction of the first flow path 227a forms a gas flow path along the inner wall surface of the reaction tube 210 on the downstream side of the rotation direction of the substrate S, and supplies gas to the processing chamber 201 along the inner wall surface of the reaction tube 210 on the downstream side of the rotation direction of the substrate S.

[0148] In addition, the extension direction of the second flow path 227b constitutes a gas flow path in a manner including the center of the reaction tube 210, and the second flow path 227b supplies gas to the processing chamber 201 from the side of the first flow path 227a toward the center of the reaction tube 210. In other words, the extension direction of the second flow path 227b constitutes a gas flow path toward the center of the substrate S, and the gas is supplied toward the center of the substrate S.

[0149] The third flow path 227 c extends in a direction along the inner wall of the reaction tube 210 upstream of the substrate S in the rotation direction to form a gas flow path, thereby supplying gas to the processing chamber 201 along the inner wall of the reaction tube 210 upstream of the substrate S in the rotation direction.

[0150] As described above, three flow paths are formed in the processing chamber 201 in a manner of supplying gas in three directions. The inner wall surface of the reaction tube 210 on the downstream side of the first flow path 227a and the third flow path 227c can suppress gas vortex. That is, the gas vortex around the inner wall surface of the reaction tube 210 on the upstream and downstream sides of the rotation direction of the substrate S can be suppressed. In addition, the first flow path 227a to the third flow path 227c are provided at heights corresponding to the plurality of substrates S, respectively, in a state where the substrate support 300 supports the plurality of substrates S. Thus, a plurality of substrates S can be processed at one time, thereby improving production efficiency.

[0151] In the case of this method, as in the above-mentioned gas supply structure 212, the first process gas, the second process gas, and the inert gas are respectively supplied to the first flow path 227a and the second flow path 227b. In addition, the third flow path 227c is connected to a third supply system that supplies a third process gas different from the first process gas and the second process gas and an inert gas, and the third process gas and the inert gas are supplied to the third flow path 227c. As the third process gas, for example, a mixed gas can be used. As the mixed gas, for example, hydrogen (H 2 ) and oxygen (O 2 ) of a mixed gas.

[0152] Specifically, for example, after the above-mentioned steps S100 to S104 are performed, a SiN film is formed on the substrate S, and H is supplied from the third flow path 227c for a predetermined time. 2 Gas and O 2 Thereby, the SiN film is oxidized to form a silicon oxide (SiO) film or a silicon oxynitride (SiON) film.

[0153] In addition, the first process gas and the inert gas may be supplied to the first flow path 227a and the second flow path 227b, respectively, and the second process gas and the inert gas may be supplied to the third flow path 227c. That is, a third supply system for supplying the second process gas and the inert gas may be connected to the third flow path 227c. Thus, the second process gas can be supplied from a flow path different from the first process gas, and the process using the first process gas and the process using the second process gas can be performed separately.

[0154] In this embodiment, the same effects as those in the above embodiment can be obtained.

[0155] (Third Method)

[0156] Figure 7 It is a diagram showing the periphery of the gas supply structure 712 according to the third embodiment.

[0157] The gas supply structure 712 of this embodiment will Figure 8 (A) and Figure 8 The nozzle 700 as shown in (B) is stored in a housing 227 provided on the side of the processing chamber 201 for use. That is, the nozzle 700 can be stored in the housing 227 in a detachable manner. Thus, it is easy to perform maintenance and replacement of the partition wall etc. constituting the nozzle 700, change the flow path shape, etc. In this embodiment, the housing 227 is used as a storage portion for storing the nozzle 700.

[0158] like Figure 8 (B) and Fig. 9As shown, the nozzle 700 includes: a flat plate-shaped partition wall 702 as a second partition wall arranged between the substrates S in a direction substantially horizontal to the substrates S, partition walls 228 and 229 arranged parallel to each other substantially perpendicularly to the partition wall 702, and a flat plate-shaped partition wall 233 as a first partition wall. Fig. 9 As shown, a plurality of partition walls 702 may be arranged substantially horizontally along the vertical direction.

[0159] The partition wall 228 includes a wall 228a extending substantially parallel to the housing 227, and a wall 228b extending from the wall 228a in a curved manner substantially parallel to the widening portion 230. The partition wall 229 includes a wall 229a extending substantially parallel to the housing 227, and a wall 229b extending from the wall 229a in a curved manner substantially parallel to the widening portion 230 on the side opposite to the wall 228a, which is provided line-symmetrically with the partition wall 228. That is, the downstream side of the partition wall 229 is configured as the inner wall surface of the reaction tube 210 on the upstream side along the rotation direction of the substrate S. The partition wall 233 includes a wall 233a extending substantially parallel to the housing 227, and a wall 233b extending substantially parallel to the widening portion 230, which is provided parallel to the partition wall 229 and is curved from the wall 233a in a direction same as the second wall 229b of the partition wall 229. A plurality of connection holes 701 are formed in the wall 233a. In addition, the partition wall 229 may be in a shape in which the wall 229 b is not curved but is linearly continuous from the wall 229 a .

[0160] In addition, in the processing chamber 201, an auxiliary component 703 is provided on the extension line of the wall 228b of the partition wall 228 when the nozzle 700 is stored in the housing 227. In addition, an auxiliary component 704 is provided on the extension line of the wall 233b of the partition wall 233 when the nozzle 700 is stored in the housing 227. That is, the processing chamber 201 has auxiliary components 703 and 704 that extend the partition wall 228b and the partition wall 233, respectively, wherein the partition wall 228b is a component that constitutes at least a part of the first flow path 227a and the second flow path 227b that can be detachably stored in the processing chamber 201, and the partition wall 233 is a component that constitutes at least a part of the third flow path 227c and the fourth flow path 227d. In this way, the downstream side of each flow path is close to the substrate S, and the airflows supplied from each flow path can be suppressed from interfering with each other.

[0161] That is, when the nozzle 700 is stored in the housing 227, the downstream side of the partition wall 228 is configured to be along the inner wall surface of the reaction tube 210 on the downstream side of the rotation direction of the substrate S. In addition, the downstream side of the partition wall 229 is configured to be along the inner wall surface of the reaction tube 210 on the upstream side of the rotation direction of the substrate S. In addition, the downstream side of the partition wall 233 is configured to be curved in the same direction as the downstream side of the partition wall 229 and along the inner wall surface of the reaction tube 210 on the upstream side of the rotation direction of the substrate S.

[0162] The first flow path 227a and the second flow path 227b are configured so that at least a part of them is separated from each other by the partition 228. In addition, the second flow path 227b and the third flow path 227c are configured so that at least a part of them is separated from each other by the partition 229. In addition, the third flow path 227c and the fourth flow path 227d are configured so that at least a part of them is separated from each other by the partition 233. Specifically, the first flow path 227a is configured by the partition 702, the housing 227, the partition 228 and the auxiliary component 703. The second flow path 227b is configured by the partition 702, the partition 229, the partition 233 and the auxiliary component 704. The third flow path 227c is configured by the partition 702, the partition 233, the housing 227 and the auxiliary component 704. The fourth flow path 227d is configured by the partition 702, the partition 233, the housing 227 and the auxiliary component 704.

[0163] The third flow path 227c and the fourth flow path 227d are connected via a plurality of circular connection holes 701. That is, the connection holes 701 connect the third flow path 227c and the fourth flow path 227d so that the gas in the third flow path 227c and the gas in the fourth flow path 227d are mixed.

[0164] In addition, at the most downstream end of the wall 228a, the wall 229a and the wall 233a, a wall 705 is formed substantially perpendicularly to the wall 228a, the wall 229a, the wall 233a and the partition wall 702. That is, the first flow path 227a to the fourth flow path 227d are separated by the wall 705 at the end of the most downstream side of the linear shape. In addition, a circular hole 706 is formed in each wall 705 of the first flow path 227a to the fourth flow path 227d so that each flow path is connected with the processing chamber 201. The diameter of the hole 706 is a size that can make the gas flowing in each flow path have directivity. Thus, the flow of the gas can be easily controlled.

[0165] The first to fourth flow paths 227a to 227d are arranged side by side substantially horizontally, and are provided along the circumferential direction of the substrate S on the upstream side substantially horizontally with respect to the substrate S. From the most downstream side in the rotation direction of the substrate S, the first flow path 227a, the second flow path 227b, the third flow path 227c, and the fourth flow path 227d of the first to fourth flow paths 227a to 227d are arranged.

[0166] That is, the extension direction of the first flow path 227a forms a gas flow path along the inner wall surface of the reaction tube 210 on the most downstream side of the rotation direction of the substrate S, and the first flow path 227a supplies gas to the processing chamber 201 along the inner wall surface of the reaction tube 210 on the downstream side of the rotation direction of the substrate S.

[0167] The second flow path 227 b extends in a direction that includes the center of the reaction tube 210 to form a gas flow path. The second flow path 227 b supplies gas to the processing chamber 201 from the side of the first flow path 227 a toward the center of the reaction tube 210 .

[0168] The third flow path 227c and the fourth flow path 227d are configured to extend along the inner wall surface of the reaction tube 210 upstream of the rotation direction of the substrate S. This can suppress gas eddy flow around the inner wall surface of the reaction tube 210 upstream and downstream of the rotation direction of the substrate S.

[0169] Furthermore, the third flow path 227c and the fourth flow path 227d are configured to mix the gases respectively supplied from the third flow path 227c and the fourth flow path 227d through the connection hole 701 and supply the mixed gases to the processing chamber 201. That is, by simultaneously supplying gases from the third flow path 227c and the fourth flow path 227d, the gas supplied from the third flow path 227c and the gas supplied from the fourth flow path 227d can be mixed and supplied to the processing chamber 201. Thus, substrate processing using a mixed gas of the gas supplied from the third flow path 227c and the gas supplied from the fourth flow path 227d can be efficiently performed.

[0170] As described above, four flow paths are formed in the processing chamber 201 so as to supply gas in four directions.

[0171] like Fig. 9 As described above, a nozzle 700 is arranged in the housing 227 of the upstream rectifying section 214. The first flow path 227a to the fourth flow path 227d are each configured so that at least a portion thereof is separated up and down by a partition wall 702. In addition, the partition wall 702 is configured in a flat plate shape. That is, the first flow path 227a to the fourth flow path 227d are respectively arranged between each partition wall 702. The substrate S supported by the substrate support 300 is arranged so as to be arranged approximately horizontally between the partition plates 314. In addition, each partition wall 702 and each partition plate 314 are respectively arranged at the same height, and each substrate S is arranged on the approximately horizontal downstream side between each partition wall 702. As a result, the flow of gas in the vertical direction is restricted, and the directivity of the gas flow flowing from each flow path can be improved. In addition, by configuring the partition wall 702 in a flat plate shape, more partition walls 702 can be arranged in the vertical direction when the interval between each substrate S is narrowed. That is, it is easy to increase the number of substrates S that can be arranged per unit height.

[0172] That is, the partition wall 702 is disposed at a position corresponding to each substrate S in the housing 227 when the substrate support 300 supports the plurality of substrates S, and the first to fourth flow paths 227a to 227d are provided at heights corresponding to the plurality of substrates S. Thus, a plurality of substrates S can be processed at one time, thereby improving production efficiency.

[0173] In this embodiment, the first flow path 227a in the above embodiment is connected to the gas supply pipe 251, the second flow path 227b is connected to the gas supply pipe 261, and in addition, the third flow path 227c is connected to the gas supply pipe 651, and the fourth flow path 227d is connected to the gas supply pipe 661.

[0174] In the gas supply pipe 651, a third process gas source 652a for supplying the third process gas, an MFC 653a, and a valve 654a are provided in order from the upstream direction.

[0175] The downstream side of the valve 654a in the gas supply pipe 651 is connected to the gas supply pipe 655a. In the gas supply pipe 655a, an inert gas source 656a, an MFC 657a, and a valve 658a are provided in this order from the upstream direction.

[0176] The third supply system 370 as a third process gas supply system mainly includes a gas supply pipe 651, MFC 653a, valve 654a, gas supply pipe 655a, MFC 657a, and valve 658a for supplying process gas to the process chamber 201 through the third flow path 227c. In addition, the third process gas source 652a and the inert gas source 656a may also be included in the third supply system 370.

[0177] In the gas supply pipe 661, a fourth process gas source 652b for supplying a fourth process gas, an MFC 653b, and a valve 654b are provided in order from the upstream direction.

[0178] The downstream side of the valve 654b in the gas supply pipe 661 is connected to the gas supply pipe 655b. The gas supply pipe 655b is provided with an inert gas source 656b, an MFC 657b, and a valve 658b in order from the upstream direction.

[0179] The fourth supply system 380 as a fourth process gas supply system mainly includes a gas supply pipe 661 for supplying process gas to the process chamber 201 through the fourth flow path 227d, MFC 653b, valve 654b, gas supply pipe 655b, MFC 657b, and valve 658b. In addition, the fourth process gas source 652b and the inert gas source 656b may also be included in the fourth supply system 380.

[0180] A third process gas different from the first process gas and the second process gas may be supplied from the third process gas source 652a. As the third process gas, for example, a gas containing oxygen (O) may be used. 2 )gas.

[0181] A fourth process gas may also be supplied from a fourth process gas source 652b. The fourth process gas is a gas different from the first process gas, the second process gas, and the third process gas and is a gas mixed with the third process gas. As the fourth process gas, for example, a gas containing hydrogen (H), i.e., hydrogen (H 2 )gas.

[0182] In this embodiment, for example, the above steps S100 to S104 are performed, and after the SiN film is formed on the substrate S, O is respectively supplied from the third flow path 227c and the fourth flow path 227d. 2 Gas and H 2 At least a portion of the gas is simultaneously supplied for a predetermined time. Thus, O is supplied to the SiN film on the substrate S. 2 Gas and H 2 The mixed gas of the gases oxidizes the SiN film on the substrate S to form a silicon oxide (SiO) film or a silicon oxynitride (SiON) film.

[0183] In addition, the connecting hole 701 may not be provided in the partition wall 233, and the first process gas and the inert gas may be supplied to the first flow path 227a and the second flow path 227b, respectively, the second process gas and the inert gas may be supplied to the third flow path 227c, and the third process gas, i.e., the mixed gas, which is different from the first process gas and the second process gas may be supplied to the fourth flow path 227d. Thus, the second process gas may be supplied from a flow path different from the first process gas, and the third process gas may be supplied from a flow path different from the first process gas and the second process gas, and the process using the first process gas, the process using the second process gas, and the process using the third process gas may be performed separately.

[0184] In addition, if Figure 7 As shown, the first process gas is introduced into the first flow path 227a, the second flow path 227b, the third flow path 227c and the fourth flow path 227d from the outside of the heater 211, respectively, and flows in a straight line, and is supplied to the process chamber 201. That is, the first flow path 227a, the second flow path 227b, the third flow path 227c and the fourth flow path 227d can supply the gas introduced from the outside of the heater 211 disposed outside the process chamber 201 into the process chamber 201. Therefore, it is possible to suppress the first process gas from being thermally decomposed before reaching the substrate S.

[0185] In this embodiment, the same effects as those in the above embodiment can be obtained.

[0186] Next, use Fig.10 (A) and Fig.10 (B) describes a modification example of the gas supply structure 212 according to one embodiment of the present disclosure.

[0187] Fig.10(A) shows that the block-shaped nozzle 800 is stored in the housing 227 for use. In the nozzle 800, three flow paths are formed in the block-shaped housing 801. The housing 801 is formed with a first flow path 802a, a second flow path 802b, and a third flow path 802c.

[0188] The first flow path 802a extends substantially parallel to the housing 227, opens toward the widening portion 230, and supplies gas to the processing chamber 201 along the inner wall surface of the reaction tube 210 on the downstream side of the rotation direction of the substrate S. The second flow path 802b extends substantially parallel to the first flow path 802a on the side of the first flow path 802a, opens in a step-like manner, and supplies gas to include the center point of the substrate S. The third flow path 802c extends substantially parallel to the second flow path 802b on the side of the second flow path 802b, opens toward the widening portion 230 on the side opposite to the opening side of the first flow path 802a, and supplies gas to the processing chamber 201 along the inner wall surface of the reaction tube 210 on the upstream side of the rotation direction of the substrate S on the side opposite to the opening side of the first flow path 802a.

[0189] In the case of this variation, as with the gas supply structure 612 in the above-mentioned second method, the first processing gas, the second processing gas and the inert gas are respectively supplied to the first flow path 802a and the second flow path 802b, and the third processing gas and the inert gas different from the first processing gas and the second processing gas are supplied to the third flow path 803c.

[0190] Fig.10 (B) Four nozzles 902a, 902b, 902c, and 902d of different lengths are housed in the housing 227 for use. That is, four flow paths are provided in the housing 227. The nozzles 902a to 902d are arranged in parallel in the housing 227, respectively.

[0191] The nozzle 902a extends substantially parallel to the housing 227, and has a hole 903a that opens obliquely toward the widened portion 230 at the downstream end. The nozzle 902a supplies gas to the processing chamber 201 along the inner wall surface of the reaction tube 210 on the downstream side of the rotation direction of the substrate S. The nozzle 902b is arranged on the side of the nozzle 902a, and its length is shorter than that of the nozzles 902a, 902c, and 902d. It has a hole 903b that opens toward the center of the reaction tube 210 at the downstream end. The nozzle 902b supplies gas so as to include the center of the reaction tube 210. The nozzle 902c is arranged on the side of the nozzle 902b, and its length is longer than that of the nozzle 902b, and shorter than that of the nozzles 902a and 902d. It has a hole 903c that opens toward the center of the reaction tube 210 at the downstream end. The nozzle 902c supplies gas from the downstream side of the nozzle 902b so as to include the center of the substrate S. The nozzle 902d is arranged on the side of the nozzle 902c, and has a hole 903d with the same length as the nozzle 902a and opened toward the widened portion 230 on the side opposite to the opening side of the nozzle 902a. The nozzle 902d supplies gas to the processing chamber 201 along the inner wall surface of the reaction tube 210 on the upstream side of the rotation direction of the substrate S on the side opposite to the opening side of the hole 903a of the nozzle 902a.

[0192] The nozzles 902a to 902d are used as the first to fourth flow paths, respectively.

[0193] In the case of this variation, as with the gas supply structure 712 in the third embodiment, the first processing gas, the second processing gas and the inert gas are respectively supplied to the nozzle 902a serving as the first flow path and the nozzle 902b serving as the second flow path, the third processing gas and the inert gas which are different from the first processing gas and the second processing gas are supplied to the nozzle 902c serving as the third flow path, and the fourth processing gas and the inert gas which are different from the first processing gas, the second processing gas and the third processing gas and are mixed with the third processing gas are supplied to the nozzle 902d serving as the fourth flow path.

[0194] Even with the configuration using the nozzle 800 and the nozzles 902a to 902d of the above-described modified example, the same effects as those of the above-described embodiment can be obtained.

[0195] In addition, in the above-mentioned embodiment and the modified example, the case where 2 to 4 flow paths are used is described, but the present embodiment is not limited thereto. That is, even when 5 or more flow paths are used, the same effect as the above-mentioned embodiment can be obtained.

[0196] In addition, in the above-mentioned gas supply structure 212 and gas supply structure 612, as in the above-mentioned nozzle 700, a flat partition wall 702 is provided to separate at least a portion of each flow path up and down in a manner that can be loaded and unloaded inside the shell 227 arranged on the side of the processing chamber 201, and the flow paths are separated from each other approximately vertically relative to the partition wall 702. In this case, the same effect as the above-mentioned method can also be obtained.

[0197] In the above-mentioned embodiment, HCDS gas is used as the first process gas in the membrane treatment step S13, and NH 3 The case where the gas is used as the second process gas to form a film is exemplified, but the present embodiment is not limited thereto.

[0198] In addition, in the above-mentioned method, in the film processing step S13, the case where the gas supplied from the first flow path and the gas supplied from the second flow path are simultaneously supplied to the processing chamber 201 according to the process recipe is described, but the present method is not limited thereto. That is, the gas supplied from the first flow path and the gas supplied from the second flow path may be supplied at different times, or may be partially supplied simultaneously.

[0199] In addition, in the film treatment step S13, it is also possible to appropriately apply a case where at least one of the first process gas and the second process gas is stored in a tank as a storage unit and is supplied in large quantities to the substrate S at one time. That is, even in a state where at least one of the first process gas and the second process gas is stored in a tank and pressurized, when a valve as an on-off valve provided on the downstream side of the tank is opened and supplied to the substrate S, the same effect as the above-mentioned method can be obtained.

[0200] In addition, in the above embodiment, film forming is cited as an example of processing performed by the substrate processing apparatus, but the present embodiment is not limited thereto. That is, the present embodiment can be applied to film forming processing other than the thin film exemplified in the above embodiment in addition to the film forming processing exemplified above.

[0201] In addition, in the above-mentioned method, an example of forming a film using a batch-type substrate processing device that can process multiple substrates at a time is described. The present disclosure is not limited to the above-mentioned method, for example, when a film is formed using a single-piece substrate processing device that processes one or several substrates at a time, it can also be appropriately applied. In addition, in the above-mentioned method, an example of forming a film using a substrate processing device having a hot-wall type processing furnace is described. The present disclosure is not limited to the above-mentioned method, and when a film is formed using a substrate processing device having a cold-wall type processing furnace, it can also be appropriately applied.

[0202] When these substrate processing apparatuses are used, each process can be performed with the same process procedures and process conditions as those of the above-mentioned embodiment or modified examples, and the same effects as those of the above-mentioned embodiment or modified examples can be obtained.

[0203] In addition, the above-mentioned aspects and modifications may be used in combination as appropriate. The processing procedure and processing conditions in this case may be, for example, the same as those of the above-mentioned aspects and modifications.

[0204] Explanation of symbols

[0205] S substrate

[0206] 10 Substrate processing device

[0207] 201 Processing Room

[0208] 227a First flow path

[0209] 227b Second flow path

[0210] 280 Exhaust System

[0211] 300 substrate support (substrate support portion).

Claims

1. A substrate processing device, characterized in that: have: a processing chamber that processes a substrate; a substrate supporting portion that supports the substrate; an exhaust system for exhausting the processing chamber; a first flow path for supplying gas to the processing chamber along an inner wall surface of the processing chamber; as well as The second flow path supplies gas to the processing chamber from a side of the first flow path.

2. The substrate processing device according to claim 1, characterized in that: The substrate processing device further comprises: a first process gas supply system capable of supplying a first process gas to the process chamber through the first flow path and the second flow path; and The control unit is capable of controlling at least the first process gas supply system.

3. The substrate processing device according to claim 2, characterized in that: The first process gas supply system comprises: a first supply system capable of supplying the first process gas to the process chamber through the first flow path; and The second supply system is capable of supplying the first process gas to the process chamber through the second flow path.

4. The substrate processing device according to claim 2, characterized in that: The control unit controls the first process gas supply system so that the first process gas is supplied to the process chamber from the first flow path and the second flow path at least partially and simultaneously.

5. The substrate processing device according to claim 2, characterized in that: The control unit controls the first process gas supply system so as to control a ratio of flow rates of the first process gas supplied from the first flow path and the second flow path.

6. The substrate processing apparatus according to claim 1, wherein: The first flow path and the second flow path are configured such that a range where a wall surface configuring the first flow path and the second flow path is extended toward the processing chamber side includes a center point of the substrate.

7. The substrate processing apparatus according to claim 1, wherein: The substrate processing device further comprises: a rotating part that rotates the substrate supporting part. The rotating unit rotates the substrate in a direction along a direction in which the gas supplied from the first flow path flows on the upper surface of the substrate.

8. The substrate processing apparatus according to claim 1, wherein: At least one of the first flow path and the second flow path has a widened portion whose width increases toward the processing chamber side.

9. The substrate processing apparatus according to claim 1, wherein: The second flow path supplies gas along an inner wall surface of the processing chamber.

10. The substrate processing apparatus according to claim 1, wherein: A component constituting at least a portion of the first flow path and a component constituting at least a portion of the second flow path are detachably housed in a housing portion, wherein the housing portion is provided on a side of the processing chamber.

11. The substrate processing apparatus according to claim 10, wherein: The processing chamber further includes an auxiliary member that extends at least one of a member that is detachably housed in the processing chamber and that constitutes at least a portion of the first flow path and a member that constitutes at least a portion of the second flow path.

12. The substrate processing apparatus according to claim 1, wherein: At least a portion of the first flow path and the second flow path are separated from each other by a first partition wall.

13. The substrate processing apparatus according to claim 1, wherein: The substrate support portion supports a plurality of the substrates. The first flow path and the second flow path are provided at heights corresponding to the plurality of substrates, respectively.

14. The substrate processing apparatus according to claim 13, wherein: At least a portion of each of the first flow path and the second flow path is separated into upper and lower parts by a second partition wall.

15. The substrate processing apparatus according to claim 1, wherein: The substrate processing apparatus further comprises: a heating unit, which is arranged outside the processing chamber and heats the substrate. The first flow path and the second flow path can supply the gas introduced from a position outside the heating unit into the processing chamber.

16. The substrate processing apparatus according to claim 1, wherein: The substrate processing apparatus further includes a third flow path that supplies gas to the processing chamber from a side of the second flow path.

17. The substrate processing apparatus according to claim 16, wherein: The third flow path supplies gas along an inner wall surface of the processing chamber.

18. The substrate processing apparatus according to claim 16, wherein: Components constituting at least a portion of the first flow path, components constituting at least a portion of the second flow path, and components constituting at least a portion of the third flow path are detachably housed inside a housing portion, wherein the housing portion is provided on a side of the processing chamber.

19. The substrate processing apparatus according to claim 18, wherein: The processing chamber further includes an auxiliary component that extends at least one of a component that is detachably housed in the processing chamber and that constitutes at least a portion of the first flow path, a component that constitutes at least a portion of the second flow path, and a component that constitutes at least a portion of the third flow path.

20. The substrate processing apparatus according to claim 16, wherein: At least a portion of the first flow path, the second flow path, and the third flow path are separated from each other by a first partition wall.

21. The substrate processing apparatus according to claim 16, wherein: The substrate support portion supports a plurality of substrates. The first flow path, the second flow path, and the third flow path are provided at heights corresponding to the plurality of substrates, respectively.

22. The substrate processing apparatus according to claim 21, characterized in that: At least a portion of each of the first flow path, the second flow path, and the third flow path is vertically separated by a second partition wall.

23. The substrate processing apparatus according to claim 16, wherein: The substrate processing apparatus further includes a fourth flow path that supplies gas to the processing chamber from a side of the third flow path.

24. The substrate processing apparatus according to claim 23, characterized in that: The fourth flow path supplies gas along an inner wall surface of the processing chamber.

25. The substrate processing apparatus according to claim 23, characterized in that: Components constituting at least a portion of the first flow path, components constituting at least a portion of the second flow path, components constituting at least a portion of the third flow path, and components constituting at least a portion of the fourth flow path can be removably stored inside a storage portion, wherein the storage portion is arranged on the side of the processing chamber.

26. The substrate processing apparatus according to claim 25, characterized in that: The processing chamber also has: an auxiliary component that extends at least one of the components constituting at least a portion of the first flow path, the components constituting at least a portion of the second flow path, the components constituting at least a portion of the third flow path, and the components constituting at least a portion of the fourth flow path, which can be loaded and unloaded and housed in the processing chamber.

27. The substrate processing apparatus according to claim 23, wherein: At least a portion of the first flow path, the second flow path, the third flow path, and the fourth flow path are separated from each other by a first partition wall.

28. The substrate processing apparatus according to claim 23, characterized in that: The substrate support portion supports a plurality of substrates. The first flow path, the second flow path, the third flow path, and the fourth flow path are provided at heights corresponding to the plurality of substrates, respectively.

29. The substrate processing apparatus according to claim 28, characterized in that: At least a portion of each of the first flow path, the second flow path, the third flow path, and the fourth flow path is vertically separated by a second partition wall.

30. The substrate processing apparatus according to any one of claims 12, 20 and 27, characterized in that: The first partition wall is configured in a flat plate shape.

31. The substrate processing device according to any one of claims 14, 22 and 29, characterized in that: The second partition wall is configured in a flat plate shape.

32. The substrate processing apparatus according to claim 23, characterized in that: The substrate processing device further comprises: a first process gas supply system capable of supplying a first process gas to the process chamber through the first flow path and the second flow path; a third process gas supply system capable of supplying a third process gas to the process chamber through the third flow path; a fourth process gas supply system capable of supplying a fourth process gas to the process chamber through the fourth flow path; a connecting hole connecting the third flow path and the fourth flow path so as to mix the third process gas in the third flow path and the fourth process gas in the fourth flow path; and a control unit capable of controlling at least the first process gas supply system, the third process gas supply system, and the fourth process gas supply system, The control unit may control the third process gas supply system and the fourth process gas supply system so that at least a portion of the third process gas and the fourth process gas are simultaneously supplied to the process chamber.

33. The substrate processing device according to claim 2 or 32, characterized in that: The substrate processing apparatus further comprises: a second processing gas supply system capable of supplying a second processing gas to the processing chamber through the first flow path and the second flow path. The control unit is capable of controlling the second process gas supply system.

34. The substrate processing apparatus according to claim 3, characterized in that: The first supply system is capable of supplying a second processing gas to the processing chamber through the first flow path. The second supply system can supply the second processing gas to the processing chamber through the second flow path. The substrate processing apparatus further includes a second processing gas supply system including the first supply system and the second supply system and capable of being controlled by the control unit.

35. A substrate processing method, characterized in that: It has the following processes: A step of supplying gas to the processing chamber in which the substrate is arranged, through a first flow path for supplying gas along an inner wall surface of the processing chamber; supplying gas to the processing chamber through a second flow path for supplying gas to the processing chamber from a side of the first flow path; and The process of exhausting the processing chamber.

36. A method for manufacturing a semiconductor device, characterized in that: It has the following processes: A step of supplying gas to the processing chamber in which the substrate is arranged, through a first flow path for supplying gas along an inner wall surface of the processing chamber; supplying gas to the processing chamber through a second flow path for supplying gas to the processing chamber from a side of the first flow path; and The process of exhausting the processing chamber.

37. A program, characterized in that The computer enables the substrate processing device to perform the following process: A process of supplying gas to a processing chamber in which a substrate is arranged, through a first flow path for supplying gas along an inner wall surface of the processing chamber; A process of supplying gas to the processing chamber through a second flow path for supplying gas to the processing chamber from a side of the first flow path; and The process of exhausting the processing chamber.

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