Semiconductor reaction chamber and use method thereof

Abstract

The invention provides a semiconductor reaction chamber and a use method thereof.The semiconductor reaction chamber comprises a chamber body and an air inlet flange, the chamber body comprises a chamber body and a chamber flange fixed to one side of the chamber body, and a flow guide plate and a preheating ring adjacent to the flow guide plate and located on the downstream side of the flow guide plate are arranged in the chamber body; the area above the guide plate and the preheating ring is an upper cavity of the cavity, and the area below the guide plate and the preheating ring is a lower cavity of the cavity; the air inlet flange is located on the side, away from the cavity body, of the cavity flange. The air inlet flange is provided with a wafer conveying opening and an air inlet channel. The wafer conveying opening is communicated with the lower cavity of the cavity, the air inlet channel is arranged in the air inlet flange and located above the wafer conveying opening, and an air outlet of the air inlet channel is communicated with the upper cavity of the cavity. The substrate entering mode of the chamber is lower cavity transmission, the film deposition quality is improved, and the usage amount of deposition reaction gas is reduced.

Description

Technical Field

[0001] The present invention mainly relates to the technical field of semiconductor manufacturing equipment, and in particular to a semiconductor reaction chamber and a method of using the same. Background Art

[0002] With the continuous development of semiconductor technology and the continuous expansion of its application fields, semiconductor manufacturing equipment is also constantly being updated to meet the manufacturing needs of higher precision, higher efficiency and lower cost. The semiconductor reaction chamber is one of the indispensable equipment in the semiconductor manufacturing process. It is mainly used for material deposition, etching and other reactions. It is one of the most important components in the semiconductor industry and plays a vital role in the manufacture of semiconductor devices.

[0003] In the related art, semiconductor reaction chambers mainly adopt the method of transferring substrates through the upper chamber. This transfer method requires the upper chamber to have sufficient space or height so that the substrate can be smoothly transferred to the semiconductor reaction chamber. Since the upper chamber has a large space and a high height, the stability of the reaction gas flowing through the upper chamber will be reduced, which will in turn have an adverse effect on the quality of thin film deposition on the substrate. Summary of the invention

[0004] The technical problem to be solved by the present invention is to provide a semiconductor reaction chamber and a method for using the same, wherein the substrate is introduced into the chamber by lower chamber transmission, thereby improving the quality of thin film deposition and reducing the amount of reaction gas used.

[0005] To solve the above technical problems, in a first aspect, the present invention provides a semiconductor reaction chamber, comprising: a cavity, wherein the cavity comprises a cavity body and a chamber flange fixed to one side of the cavity body, a guide plate and a preheating ring adjacent to the guide plate and located on the downstream side of the guide plate are arranged inside the cavity body, the area above the guide plate and the preheating ring is the upper cavity of the cavity, and the area below the guide plate and the preheating ring is the lower cavity of the cavity; and an air inlet flange, wherein the air inlet flange is located on the side of the chamber flange away from the cavity body, the air inlet flange has a sheet conveying port and an air inlet channel; the sheet conveying port is connected to the lower cavity of the cavity, the air inlet channel is arranged inside the air inlet flange and above the sheet conveying port, and the air outlet of the air inlet channel is connected to the upper cavity of the cavity.

[0006] Optionally, the air inlet flange further includes a scavenging channel, which is arranged in the air inlet flange and below the blade transfer port; an air outlet of the scavenging channel is connected to the lower cavity of the cavity.

[0007] Optionally, the air inlet passage comprises a first vertical section and a first horizontal section, the first end of the first vertical section is an air inlet, the second end of the first vertical section is connected to the first end of the first horizontal section; the second end of the first horizontal section is an air outlet.

[0008] Optionally, the air intake channel further includes a first curved channel; the first curved channel is connected between the first vertical segment and the first horizontal segment; or the air intake channel further includes a first buffer zone; the first buffer zone is connected between the first vertical segment and the first horizontal segment.

[0009] Optionally, the scavenging passage includes a second vertical section and a second horizontal section, the first end of the second vertical section is an air inlet, the second end of the second vertical section is connected to the first end of the second horizontal section; the second end of the second horizontal section is an air outlet.

[0010] Optionally, the scavenging channel further includes a second curved channel; the second curved channel is connected between the second vertical section and the second horizontal section; or the scavenging channel further includes a second buffer zone, and the second buffer zone is connected between the second vertical section and the second horizontal section.

[0011] Optionally, the air outlet of the air inlet channel and / or the air scavenging channel is one or multiple parallel outlet slits; or the air outlet of the air inlet channel and / or the air scavenging channel is one or more rows of outlet holes.

[0012] Optionally, the air outlet of the scavenging channel is a plurality of rows of outlet holes with different inclination angles.

[0013] Optionally, the air outlet direction of the air outlet of the scavenging channel is toward a first area, wherein the first area is an area where the gap between the preheating ring and the guide plate is located.

[0014] Optionally, the outlet direction of the air outlet of the scavenging channel is toward at least a portion of the second area, wherein the second area is the area where the gap between the preheating ring and the cavity body is located.

[0015] Optionally, a guide channel is provided on one side of the guide plate close to the preheating ring, the guide channel is located inside the guide plate and the air inlet of the guide channel is located below the guide plate, the air outlet of the guide channel faces the preheating ring, and the air outlet direction of the air outlet of the scavenging channel is also toward the air inlet of the guide channel.

[0016] Optionally, a guide arc surface is provided on one side of the guide plate close to the preheating ring, and the guide arc surface is configured to guide the purge gas to blow toward the preheating ring; the outlet direction of the air outlet of the purge channel is also toward the guide arc surface.

[0017] Optionally, the outlet direction of the air outlet of the air inlet channel has an angle with the process plane, and the outlet direction of the air outlet of the air inlet channel is toward the lower cavity of the cavity; the process plane is the plane where the upper surface of the substrate is located when the substrate is subjected to a process in the semiconductor reaction chamber.

[0018] Optionally, the air inlet flange further includes a scavenging channel, which is arranged in the air inlet flange and located above the blade transfer port; an air outlet of the scavenging channel is connected to the lower cavity of the cavity.

[0019] Optionally, it also includes a support member, which includes a tray bracket, a substrate tray and an ejector pin; the substrate tray is arranged on the tray bracket; the ejector pin is movably arranged on the substrate tray, and when the ejector pin is supported by the substrate tray, the upper surface of the ejector pin is flush with the upper surface of the substrate tray or is located below the upper surface of the substrate tray; the tray bracket includes a support shaft and a plurality of support arms; one end of the plurality of support arms is connected to the support shaft, and the other end of the plurality of support arms is connected to the substrate tray.

[0020] Optionally, a variable column is connected to the upper end of each support arm, and the variable column is configured to adjust the horizontality of the substrate tray.

[0021] Optionally, the upper end of the support arm has a first groove, the lower end of the variable column matches the first groove, and the lower end of the variable column is located in the first groove.

[0022] Optionally, a stopper is further provided in the cavity body, and the stopper is configured to adjust the height of the ejector pin; each of the stoppers is located below the corresponding ejector pin.

[0023] Optionally, the lower wall of the cavity body has a second groove, which is recessed downward from the upper surface of the lower wall, and the upper surface of the lower wall is a plane; the stop member includes a lower mounting portion and an upper supporting portion, the lower surface of the mounting portion of the stop member abuts against the bottom of the second groove for positioning, and the supporting portion of the stop member is used to support the ejector pin.

[0024] In a second aspect, the present invention provides a method for using a semiconductor reaction chamber, using the semiconductor reaction chamber as described in the first aspect, comprising: after the ejector pin is supported on the lower wall of the semiconductor reaction chamber or the ejector pin is supported on a stopper, the robot is configured to transfer the substrate from the film transfer port of the semiconductor reaction chamber into the semiconductor reaction chamber and drop the substrate onto the upper surface of the ejector pin; the robot withdraws from the semiconductor reaction chamber; the tray support drives the substrate tray to rise to a process position, and the process position is the position where the substrate is subjected to thin film deposition.

[0025] Compared with the prior art, the present invention has the following advantages: the film transmission port of the air inlet flange is connected to the lower cavity of the cavity, so the substrate enters the cavity by transmission from the lower cavity, so that the upper cavity space of the semiconductor reaction chamber is smaller and the height is lower, the flow rate of the reaction gas is more stable, the quality of thin film deposition is improved, and the amount of reaction gas used is reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] The accompanying drawings are included to provide a further understanding of the present application. They are included and constitute a part of the present application. The accompanying drawings illustrate embodiments of the present application and together with the present specification serve to explain the principles of the present application. In the accompanying drawings:

[0027] Figure 1 It is a schematic diagram of the overall structure of a semiconductor reaction chamber according to an embodiment of the present invention;

[0028] Figure 2 Schematic diagram of the side wall structure of a semiconductor reaction chamber according to an embodiment of the present invention;

[0029] Figure 3 FIG. 1 is a schematic cross-sectional view of a semiconductor reaction chamber according to an embodiment of the present invention. Figure 1 ;

[0030] Figure 4 FIG. 1 is a schematic cross-sectional view of a semiconductor reaction chamber according to an embodiment of the present invention. Figure 2 ;

[0031] Figure 5 yes Figure 4 Schematic diagram of the structure of the middle air intake flange;

[0032] Figure 6 is a top view of the interior of a reaction chamber in one embodiment of the present invention;

[0033] Figure 7 This is a schematic structural diagram of a guide plate in a semiconductor reaction chamber according to an embodiment of the present invention;

[0034] Figure 8 It is another structural schematic diagram of a guide plate in a semiconductor reaction chamber according to an embodiment of the present invention;

[0035] Fig. 9 It is a schematic structural diagram of an improved preheating ring in a semiconductor reaction chamber according to an embodiment of the present invention;

[0036] Fig.10 It is another structural schematic diagram of a guide plate in a semiconductor reaction chamber according to an embodiment of the present invention;

[0037] Fig.11 FIG. 1 is a schematic cross-sectional view of a semiconductor reaction chamber according to an embodiment of the present invention. Figure 3 ;

[0038] Fig.12 FIG. 1 is a schematic cross-sectional view of a semiconductor reaction chamber according to an embodiment of the present invention. Figure 4 ;

[0039] Fig.13 FIG. 1 is a schematic cross-sectional view of a semiconductor reaction chamber according to an embodiment of the present invention. Figure 5 ;

[0040] Fig.14 FIG. 1 is a schematic cross-sectional view of a semiconductor reaction chamber according to an embodiment of the present invention. Figure 6 ;

[0041] Fig.15 FIG. 1 is a schematic cross-sectional view of a semiconductor reaction chamber according to an embodiment of the present invention. Figure 7 ;

[0042] Fig.16 is a schematic diagram of the structure of an exit slit in one embodiment of the present invention;

[0043] Fig.17 is another schematic diagram of the structure of an exit slit in one embodiment of the present invention;

[0044] Fig.18 is a schematic diagram of a structure of an exit hole in one embodiment of the present invention;

[0045] Fig.19 is another structural schematic diagram of an exit hole in one embodiment of the present invention;

[0046] Fig. 20 FIG. 1 is a schematic cross-sectional view of a semiconductor reaction chamber according to an embodiment of the present invention. Figure 8 ;

[0047] Fig.21 FIG. 1 is a schematic cross-sectional view of a semiconductor reaction chamber according to an embodiment of the present invention. Figure 9 ;

[0048] Fig. 22 It is a schematic diagram of the structure of a support member of a semiconductor reaction chamber according to an embodiment of the present invention;

[0049] Fig.23 FIG. 1 is a schematic cross-sectional view of a semiconductor reaction chamber according to an embodiment of the present invention. Figure 10 ;

[0050] Fig.24 It is a schematic flow chart of a method for using a semiconductor reaction chamber according to an embodiment of the present invention.

[0051] The continuous arrows in the figure indicate the gas flow direction.

[0052] The numbers in the figure are:

[0053] 100- cavity;

[0054] 110- chamber body, 120- chamber flange;

[0055] 111- flow guide plate, 112- preheating ring, 113- first wall plate, 114- second wall plate, 115- third wall plate, 116- fourth wall plate, 117- flow guide channel, 118- flow guide arc surface, 119- heating plate, 121- flow guide arc surface;

[0056] 200-intake flange;

[0057] 210-film transmission port, 220-air inlet channel, 230-air scavenging channel, 240-emission hole, 250-emission slit;

[0058] 221-first vertical section, 222-first buffer zone, 223-first horizontal section, 224-first bending channel;

[0059] 231 - second vertical section, 232 - second buffer zone, 233 - second horizontal section, 234 - second bending channel;

[0060] 300-support member;

[0061] 310-tray support, 320-substrate tray, 330-thrust pin, 340-stopper;

[0062] 311-support shaft, 312-support arm, 313-variable column, 341-annular groove;

[0063] 400-substrate. DETAILED DESCRIPTION

[0064] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for the description of the embodiments. Obviously, the drawings described below are only some examples or embodiments of the present application. For ordinary technicians in this field, the present application can also be applied to other similar scenarios based on these drawings without creative work. Unless it is obvious from the language environment or otherwise explained, the same reference numerals in the figures represent the same structure or operation.

[0065] In the description of the present application, it should be understood that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "lateral, vertical, perpendicular, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the device or element referred to must have a specific direction or be constructed and operated in a specific direction, and therefore cannot be understood as limiting the scope of protection of the present application; the directional words "inside and outside" refer to the inside and outside relative to the contours of each component itself.

[0066] In addition, it should be noted that the use of words such as "first" and "second" to define components is only for the convenience of distinguishing the corresponding components. If not otherwise stated, the above words have no special meaning and cannot be understood as limiting the scope of protection of this application. In addition, although the terms used in this application are selected from well-known and commonly used terms, some terms mentioned in the specification of this application may be selected by the applicant at his or her discretion, and their detailed meanings are explained in the relevant parts of the description of this article. In addition, it is required to understand this application not only by the actual terms used, but also by the meaning implied by each term.

[0067] Flowcharts are used in this application to illustrate the operations performed by a semiconductor reaction chamber according to an embodiment of the present application. It should be understood that the preceding or following operations are not necessarily performed in exact order. Instead, various steps may be processed in reverse order or simultaneously. At the same time, other operations may be added to these processes, or one or more operations may be removed from these processes.

[0068] refer to Figure 1 and Figure 2 As shown, the semiconductor reaction chamber of this embodiment includes a chamber 100, which includes a chamber body 110 and a chamber flange 120 fixed to one side of the chamber body 110. In a chamber structure, the side wall of the chamber body 110 is formed by splicing four wall panels in sequence. Figure 2 The figure shows the first wall plate 113 at the rear, the second wall plate 114 at the top, the third wall plate 115 at the front, and the fourth wall plate 116 at the bottom, all of which are plate-shaped members. The above four wall plates are sequentially spliced ​​to form the side walls of the cavity body 110, that is, the first wall plate 113 and the third wall plate 115 are arranged oppositely, and the second wall plate 114 and the fourth wall plate 116 are arranged oppositely to form the semiconductor reaction square cavity of this embodiment. In one implementation, the four wall plates of the cavity body 110 are all flat wall plates.

[0069] refer to Figure 3 As shown, a guide plate 111 and a preheating ring 112 adjacent to the guide plate 111 and located on the downstream side of the guide plate 111 are provided inside the cavity body 110; the area above the guide plate 111 and the preheating ring 112 is the upper cavity of the cavity; the area below the guide plate 111 and the preheating ring 112 is the lower cavity of the cavity; and an air inlet flange 200 is provided. The air inlet flange 200 is provided on the side of the chamber flange 120 away from the cavity body 110; the air inlet flange 200 has a film transmission port 210 and an air inlet channel 220; the film transmission port 210 is connected to the fluid of the lower cavity of the cavity; the air inlet channel 220 is provided inside the air inlet flange 200 and above the film transmission port 210; the air outlet of the air inlet channel 220 is connected to the upper cavity of the cavity.

[0070] In this embodiment, the guide plate 111 and the preheating ring 112 are basically at the same horizontal position, and the guide plate 111 and the preheating ring 112 separate the cavity body 110 into the upper cavity and the lower cavity. When working in the semiconductor reaction chamber, for example, when performing an epitaxial process, the substrate 400 (such as a wafer) is stabilized in the area surrounded by the preheating ring 112 by the relevant support structure, and the substrate 400 is also basically at the same horizontal position as the preheating ring 112, and the thin film deposition process is performed at this position, which is the process position of thin film deposition. Therefore, it can also be said that the area above the process position is the upper cavity of the cavity, and the area below the process position is the lower cavity of the cavity.

[0071] In this embodiment, the film transfer port 210 of the air inlet flange 200 is connected to the lower cavity of the cavity, and the substrate 400 is transferred to the lower cavity of the cavity by the lower cavity transfer method, and then the substrate 400 is lifted to the process position by the support structure for thin film deposition. It can be seen that since the semiconductor reaction chamber adopts the lower cavity transfer method, the upper cavity space of the semiconductor reaction chamber can be designed to be smaller and lower in height, thereby reducing the Reynolds number of the reaction gas flow field, making the flow rate of the reaction gas more stable and easier to control, and the controllability and flexibility of the semiconductor preparation process will be higher, and the quality of thin film deposition will be finally improved. In addition, the lower cavity transmission method also reduces the consumption of reaction gas accordingly, which has a positive effect on cost reduction control in the production process.

[0072] exist Figure 3In the embodiment, the air inlet channel 220 is arranged in the air inlet flange 200 and is located above the film transmission port 210, and the air outlet of the air inlet channel 220 is connected to the upper chamber of the chamber. It should be understood that a avoidance port is provided on the chamber flange 120 located between the air inlet flange 200 and the chamber body 110, so that the substrate 400, the reaction gas, and the purge gas can be transmitted into the reaction chamber without obstacles. In addition, the air inlet channel 220 includes a first vertical section 221 and a first horizontal section 223. The first end of the first vertical section 221 is an air inlet. In the illustrated embodiment, the air inlet of the air inlet channel 220 passes through the upper end surface of the air inlet flange 200. The second end of the first vertical section 221 is connected to the first end of the first horizontal section 223, and the second end of the first horizontal section 223 is an air outlet. The scavenging channel 230 includes a second vertical section 231 and a second horizontal section 233. The first end of the second vertical section 231 is an air inlet. In the illustrated embodiment, the air inlet of the scavenging channel 230 runs through the lower end surface of the air inlet flange 200. The second end of the second vertical section 231 is connected to the first end of the second horizontal section 233, and the second end of the second horizontal section 233 is an air outlet. It should be noted that the "horizontal" in the first horizontal section 223 and / or the second horizontal section 233 refers to approximately horizontal. In some embodiments, the gas channel section (the first horizontal section 223 and / or the second horizontal section 233) is horizontally arranged. In other embodiments, the gas channel section (the first horizontal section 223 and / or the second horizontal section 233) can also be arranged to have a certain inclination angle relative to the horizontal line. For ease of description, in this embodiment, the aforementioned types of gas channel sections can all be referred to as horizontal sections.

[0073] refer to Figure 3 and Figure 4 As shown, the air inlet channel 220 further includes a first buffer zone 222, which is connected between the first vertical section 221 and the first horizontal section 223. The scavenging channel 230 further includes a second buffer zone 232, which is connected between the second vertical section 231 and the second horizontal section 233. The cross-sectional areas of the first buffer zone 222 and the second buffer zone 232 perpendicular to the airflow direction are larger than the cross-sectional area of ​​the upstream channel. Based on this, the buffer zone can reduce the gas flow rate and also enable the gas to be mixed evenly. Figure 5 As shown, it can be seen that no matter the air intake passage 220 or the scavenging passage 230, their air outlets can be a single row of perforations or multiple rows of perforations.

[0074] On the one hand, the air inlet channel 220 is separated from the film transfer port 210, and the reaction gas has an independent flow channel, which will not interact with the process of transmitting the substrate 400 to the cavity 100; on the other hand, when the reaction gas flows from the first vertical section 221 into the first buffer zone 222, because the cross-sectional area of ​​the first buffer zone 222 is larger than the cross-sectional area of ​​the first vertical section 221, the first buffer zone 222 reduces the flow rate of the reaction gas, and the gas pressure is more stable, which also makes the reaction gas mix more evenly, thereby providing favorable conditions for the reaction gas to have smoother fluidity and better uniformity after flowing into the upper cavity of the cavity. The second buffer zone 232 of the purge channel 230 is based on the same principle. The cross-sectional area of ​​the second buffer zone 232 is greater than the cross-sectional area of ​​the second vertical section 231. Therefore, when the purge gas flows into the second buffer zone 232 from the second vertical section 231, the second buffer zone 232 reduces the flow rate of the purge gas, the gas pressure becomes more stable, and the purge gas is mixed more evenly. Then, the purge gas can flow to the set area more smoothly after passing through the second horizontal section 233.

[0075] In one implementation, the outlet direction of the air outlet of the scavenging channel 230 is toward the first area, wherein the first area is the area where the gap between the preheating ring 112 and the guide plate 111 is located.

[0076] refer to Figure 6 As shown in the figure, area A is the area where the gap between the guide plate 111 and the preheating ring 112 is located. Areas B and C are the second area, and the second area is the area where the gap between the preheating ring 112 and the cavity body 110 is located. Specifically, the area where the gap between the preheating ring 112 and the first wall plate 113 is located is area B, and the area where the gap between the preheating ring 112 and the third wall plate 115 is located is area C. Area D is the area where the gap between the preheating ring 112 and the heating plate 119 is located. In this embodiment, the purge channel 230 is separated from the film transfer port 210, and the purge gas has an independent circulation channel, which will not interact with the process of transmitting the substrate 400 to the cavity 100. The outlet direction of the purge channel 230 is toward the first area. Under the action of the purge gas, the reaction gas flowing in the upper cavity of the cavity will not flow into the lower cavity of the cavity through the gap in area A, thereby ensuring the stability of the reaction gas flow.

[0077] In one implementation, the outlet of the scavenging channel 230 is directed toward at least part of the second region (region B and region C). Preferably, the outlet of the scavenging channel 230 is directed toward the upstream portion of the second region.

[0078] Furthermore, the air outlet of the scavenging channel 230 may be partially oriented toward the first area and partially oriented toward the second area (or the upstream part of the second area). Accordingly, the scavenging channel 230 includes at least two exhaust ports, wherein at least one exhaust port has a first inclination angle (the meaning of "the air outlet has a certain inclination angle" described in this article is: there is a section of guide channel in the channel (inlet channel or scavenging channel) (for example, it may correspond to the "horizontal section" of at least the downstream part mentioned in other positions of this patent), the outlet of the guide channel is the "air outlet" of the channel (inlet channel or scavenging channel), the air outlet has a certain inclination angle, that is, the guide channel is set to have a certain inclination angle, so that the gas flowing through the air outlet can be blown out of the air intake flange along the aforementioned certain inclination angle), the air outlet with the first inclination angle is responsible for blowing the scavenging gas to the first area; at least another exhaust port has a second inclination angle, and the air outlet with the second inclination angle is responsible for blowing the scavenging gas to the second area (or the upstream part of the second area). Furthermore, due to the Figure 6 In the horizontal direction, different positions of the second region have different distances from the scavenging channel. In order to blow the scavenging gas to different places in the second region respectively, the scavenging channel 230 also includes at least one row of air outlets with a third inclination angle, and the air outlets with the third inclination angle are responsible for blowing the scavenging gas to another part of the second region (the other part is different from the part blown to by the air outlets with the second inclination angle).

[0079] In a semiconductor reaction chamber, the area close to the gas inflow side is called the upstream area, and the area far from the gas inflow side is called the downstream area.

[0080] This embodiment provides a purge gas in the first area or the first area plus the second area near the gas inflow side, thereby reducing the flow of reaction gas into the lower chamber of the chamber, avoiding the deposition of reaction gas in the lower chamber, improving the stability of reaction gas flow in the upper chamber, and improving the quality of thin film deposition. Less reaction gas flows into the lower chamber of the chamber, indicating that the utilization rate of the reaction gas is high, reducing the amount of reaction gas used, and also avoiding the reaction gas from entering the lower chamber and generating undesired deposition in the lower chamber.

[0081] In another embodiment, the outlet direction of the air outlet of the scavenging passage 230 may also be toward the third region (region D).

[0082] Correspondingly, the purge channel 230 further includes at least one row of gas outlets with a fourth inclination angle, which are responsible for blowing the purge gas to the third area. That is, in this embodiment, the purge gas is blown to as many gaps as possible to prevent the reaction gas from flowing into the lower cavity of the chamber.

[0083] This embodiment can provide purge gas not only in the upstream area, but also in the downstream area (i.e., the third area) to isolate the reaction gas and make the reaction gas flow only in the upper cavity of the cavity as much as possible, thereby avoiding the disadvantage that too much reaction gas is deposited in the lower cavity of the cavity and is difficult to remove due to long-term use of the semiconductor reaction chamber.

[0084] refer to Figure 7 As shown, a guide channel 117 is provided on one side of the guide plate 111 close to the preheating ring 112, the air inlet of the guide channel 117 is located below the guide plate 111, the air outlet of the guide channel 117 faces the preheating ring 112, and the air outlet direction of the air outlet refers to the direction in which the fluid flows out of the air outlet. The air outlet direction of the scavenging channel 230 faces the air inlet of the guide channel 117.

[0085] refer to Figure 8 As shown, a guide arc surface 118 is provided on one side of the guide plate 111 close to the preheating ring 112 , and the outlet direction of the scavenging channel 230 is also toward the guide arc surface 118 , and the guide arc surface 118 is configured to guide the scavenging gas to blow toward the preheating ring 112 .

[0086] There are two ways to improve the guide plate 111 . One is to provide a guide channel 117 in the guide plate 111 . The other is to provide a guide arc surface 118 on the guide plate 111 . The purpose is to guide the purge gas to blow toward the preheating ring 112 .

[0087] In an optimized implementation, reference Fig. 9 As shown, a guide arc surface 121 is provided on one side of the preheating ring 112 close to the guide plate 111. The guide arc surface 121 guides the airflow downward, and the airflow flows through the guide arc surface 121 at the bottom of the preheating ring 112 after passing through the guide arc surface 118, so as to prevent the airflow from directly flowing onto the preheating ring 112, causing the airflow to flow to the upper cavity and affecting the stability of the airflow in the upper cavity.

[0088] Similarly, in Figure 7 On the basis of the embodiment shown, the following configuration can also be made: the preheating ring 112 can also be provided with a guide arc surface 118 to receive and guide the gas to the bottom surface of the preheating ring 112, similarly to the reference Fig. 9 Alternatively, the preheating ring 112 is designed to be thinner so that the bottom surface of the preheating ring 112 is higher than the highest position of the guide channel 117 .

[0089] Whether to direct the gas directly to the gap between the guide plate 111 and the preheating ring 112 (or to direct the gas to blow toward the preheating ring 112) or to direct the gas so that the gas flows through the lower surface of the gap between the guide plate 111 and the preheating ring 112 can be determined by factors such as the upper and lower chamber pressures, the purge gas flow pressure and speed in actual operation.

[0090] Further, refer to Fig.10 As shown, a guide arc surface 118 as shown in the figure can be provided on the bottom surface of the guide plate 111. The gas is intercepted and then guided to the lower surface of the gap between the guide plate 111 and the preheating ring 112. Preferably, the guide arc surface 118 has a first section protruding upward, a second section protruding downward, and a third section extending horizontally. The first section, the second section, and the third section transition smoothly, thereby guiding the gas to the lower surface of the gap between the guide plate 111 and the preheating ring 112 in a nearly horizontal manner.

[0091] In another embodiment of the present invention, the guide plate 111 and the preheating ring 112 are not designed to guide the flow, and the purge channel is configured to make the purge gas be blown obliquely toward the upstream side of the gap between the guide plate 111 and the preheating ring 112. After the purge gas is blocked by the guide plate 111, turbulence will be generated, and the turbulent airflow will flow through the lower side of the gap between the guide plate 111 and the preheating ring 112. The airflow that is blocked and generates turbulence has a small flow velocity, multiple directions, and a relatively high and stable pressure, which can better and more steadily prevent the reaction gas from flowing downward.

[0092] In the above described embodiment, the purge passage is configured to make the purge gas blow obliquely upward toward the lower cavity independently of the vane transfer port. In other embodiments of the present invention, the purge passage may also be configured to make the purge gas blow obliquely upward toward the vane transfer port.

[0093] refer to Fig.11 As shown, the air outlet of the air inlet channel 220 may be an outlet slit or an outlet hole, and the air outlet of the scavenging channel 230 may also be an outlet slit or an outlet hole. Fig.12 As shown, the air outlet of the air inlet channel 220 may be a plurality of mutually parallel outlet slits or outlet holes, and the air outlet of the scavenging channel 230 may also be a plurality of mutually parallel outlet slits or outlet holes. Of course, whether it is an outlet slit or an outlet hole, the direction of the outflowing gas may be set to a horizontal direction or an inclined direction, that is, at a certain angle to the horizontal direction.

[0094] refer to Fig.13 As shown, the outlet direction of the air outlet of the air inlet channel 220 has an angle with the process plane, and the outlet direction of the air outlet of the air inlet channel 220 is toward the lower cavity of the cavity, wherein the process plane is the plane where the upper surface of the substrate 400 is located when the substrate 400 is processed in the semiconductor reaction chamber, and the outlet direction of the air outlet refers to the direction in which the fluid flows out of the air outlet.

[0095] refer to Fig.14As shown, the air inlet channel 220 is arranged in the air inlet flange 200 and is located above the vane port 210, and the first horizontal section 223 of the air inlet channel 220 is connected to the upper cavity of the cavity. The air inlet flange 200 also includes a scavenging channel 230, which is also arranged in the air inlet flange 200 and is also located above the vane port 210, and the second horizontal section 233 of the scavenging channel 230 is connected to the lower cavity of the cavity.

[0096] refer to Fig.15 As shown, the intake channel 220 further includes a first bending channel 224 (it should be understood that the bending channel includes at least one bend), and the first bending channel 224 is connected between the first vertical section 221 and the first horizontal section 223. The scavenging channel 230 further includes a second bending channel 234, and the second bending channel 234 is connected between the second vertical section 231 and the second horizontal section 233. In this embodiment, by designing the bending channel, the gas can be mixed evenly through the bending channel, and its function is equivalent to the function of uniformly mixing the gas by designing the buffer zone.

[0097] In an embodiment of the present invention, the intake passage 220 or the scavenging passage 230 may include both a bending passage (eg, a first bending passage 224 and a second bending passage 234) and a buffer zone (eg, a first buffer zone 222 and a second buffer zone 232).

[0098] In this embodiment, the air outlet of the air inlet channel 220 and / or the scavenging channel 230 may be an outlet slit 250 (eg, Fig.16 ) or multiple parallel exit slits 250 (as shown Fig.17 shown).

[0099] In one embodiment, the air outlets of the air inlet channel 220 and / or the scavenging channel 230 may be a plurality of collinear outlet slits 250. For example, in a direction perpendicular to the paper (in Fig.15 The air inlet flange 200 includes a plurality of independent air inlet passages 220 and / or scavenging passages 230, each of which has an outlet slit 250 extending in a direction perpendicular to the paper. It should be understood that when the horizontal sections of each independent air inlet passage 220 and / or scavenging passage 230 are at the same level, the air outlet is embodied as a plurality of collinear outlet slits. When the horizontal sections of the independent air inlet passages 220 and / or scavenging passages 230 are not at the same level, the air outlet is embodied as a plurality of parallel outlet slits.

[0100] Based on the embodiment described in the previous paragraph, each independent air intake channel 220 and / or scavenging channel 230 may also have a plurality of exit slits 250 extending in a direction perpendicular to the paper surface. For example, in one embodiment, in a direction perpendicular to the paper surface, the air intake flange 200 includes a plurality of independent air intake channels 220 and / or scavenging channels 230. Taking the air intake channel 220 as an example for explanation (the scavenging channel 230 is the same), each air intake channel 220 includes a first buffer zone 222, and a first buffer zone 222 is connected to a plurality of exit slits 250, and the plurality of exit slits 250 connected to the same first buffer zone 222 may be arranged in one row or multiple rows in a direction perpendicular to the paper surface.

[0101] Each independent air inlet channel 220 may be connected to a plurality of first vertical sections 221 .

[0102] In other embodiments, the air outlet of the air intake passage 220 and / or the scavenging passage 230 may also be an exhaust hole 240 (eg, Fig.18 ) or multiple rows of exit holes 240 (as shown Fig.19 As shown in FIG. 2 ), the air outlet of the scavenging passage 230 may also be a plurality of rows of outlet holes 240 with different inclination angles.

[0103] Similar to the embodiment in which the air outlet is the outlet slit 250 , when the air outlet is the outlet hole 240 , the air intake passage 220 and the scavenging passage 230 also have a variety of implementations.

[0104] The following description is made by taking the air inlet channel 220 as an example. Fig.15 As a reference for understanding the orientation description here, the air inlet flange 200 includes one or more independent air inlet channels 220. The air outlet of each independent air inlet channel 220 is expressed as one or more outlet holes 240. An embodiment is given to illustrate: each independent air inlet channel 220 includes a first buffer zone 222, each first buffer zone 222 is connected to one or more horizontal sections, and each air inlet channel 220 corresponds to one or more air outlets. It should be noted that since the air inlet channel 220 is generally composed of a vertical section and a horizontal section, the downstream end of the horizontal section is the air outlet, that is, the air outlet of the air inlet channel 220.

[0105] It should be understood that a plurality of first vertical sections 221 may be included in an independent air intake passage 220 .

[0106] refer to Fig. 20 As shown, in the above embodiments, the cavity body 110 of the semiconductor reaction chamber is a square cavity. In other embodiments of the present invention, the cavity body 110 may also be a circular cavity or an inclined cavity with a middle cross-sectional area larger than the cross-sectional area at both ends, or the cavity body 110 may be an arc-shaped cavity with a middle cross-sectional area larger than the outer cross-sectional area.

[0107] refer to Fig.21 and Fig. 22 As shown, the semiconductor reaction chamber of this embodiment further includes a support member 300. The support member 300 includes a tray support 310, a substrate tray 320 and an ejector pin 330. The substrate tray 320 is arranged on the tray support 310; the ejector pin 330 is movably arranged on the substrate tray 320, and when the ejector pin 330 is supported by the substrate tray 320 (i.e., when the ejector pin 330 is suspended on the substrate tray 320), the upper surface of the ejector pin 330 is flush with the upper surface of the substrate tray 320 or is located below the upper surface of the substrate tray 320; the tray support 310 includes a support shaft 311 and a plurality of support arms 312; one end of the plurality of support arms 312 is connected to the support shaft 311, and the other end of the plurality of support arms 312 is connected to the substrate tray 320. The support member 300 in the semiconductor reaction chamber of this embodiment is a single-axis support, with less light blocking and good light transmission uniformity.

[0108] In this embodiment, one implementation of “the substrate tray 320 is arranged on the tray support 310” may be that a recess is arranged on the bottom surface of the substrate tray 320, and a positioning pin is arranged on the tray support 310. When the positioning pin extends into the aforementioned recess, that is, when the substrate tray 320 is mounted on the tray support 310, at least part of the positioning pin is located in the aforementioned recess, and the tray support 310 can drive the substrate tray 320 to rotate. An ejector pin 330 is movably arranged on the substrate tray 320. When the ejector pin 330 is supported by the substrate tray 320, the upper surface of the ejector pin 330 is flush with the upper surface of the substrate tray 320 or is located below the upper surface of the substrate tray 320.

[0109] The support member 300 is essential to ensure the smooth progress of the thin film deposition process. When the substrate 400 is transferred into the interior of the semiconductor reaction chamber, the lower end of the ejector pin 330 abuts against the inner surface of the lower wall of the chamber body 110 (or the upper surface of the lower wall, which is a plane), and the upper surface of the ejector pin 330 is higher than the upper surface of the substrate tray 320. The substrate 400 is supported by the ejector pin 330 whose upper surface is higher than the substrate tray 320. Then, the tray support 310 rises, driving the substrate tray 320 to rise. When the substrate tray 320 rises to a certain height, the substrate tray 320 can provide support for the ejector pin 330. At this time, since the upper surface of the ejector pin 330 is flush with the upper surface of the substrate tray 320 or is located below the upper surface of the substrate tray 320, the substrate 400 is supported by the substrate tray 320. When the tray support 310 continues to rise, driving the substrate 400 to rise to the process position, the thin film deposition process begins.

[0110] In this embodiment, a variable column 313 is connected to the upper end of each support arm 312 , and the variable column 313 is configured to adjust the horizontality of the substrate tray 320 .

[0111] Specifically, refer to Fig. 22 As shown, the support arm 312 supports the substrate tray 320 thereon. Due to the manufacturing process or structural changes of the support member 300 during use, the height of the support arm 312 may be different. In this case, the substrate tray 320 supported by the support arm 312 will be tilted, thereby causing the substrate 400 on the substrate tray 320 to tilt. In the case of excessive tilt, the substrate 400 will overturn under the action of gravity, causing the substrate 400 to be retained in the semiconductor reaction chamber and unable to be removed or even broken. In the case of a small tilt angle, when the substrate 400 approaches the upper surface of the substrate tray 320, the residual gas at the bottom of the substrate 400 is unevenly discharged along the four sides, which can easily cause the substrate 400 to slide off the center position.

[0112] In order to keep the substrate 400 as horizontal as possible under the support of the substrate tray 320, the thickness of the variable column 313 is made into different sizes, and there is a slight difference in thickness between each variable column 313, that is, a set of variable columns 313 can be provided, wherein each variable column 313 has a different height, and of course, there can be multiple variable columns 313 of each height. In this way, variable columns 313 of different heights or the same height are placed on the upper end of the support arm 312 to achieve the leveling of the substrate tray 320, so that the height of the substrate tray 320 is consistent when receiving or supporting the substrate 400, thereby ensuring that the substrate 400 will not tilt.

[0113] Furthermore, the upper end of the support arm 312 has a first groove, the lower end of the variable column 313 matches the first groove, and the lower end of the variable column 313 is located in the first groove.

[0114] refer to Fig.23 As shown, in one implementation, the ejector pin 330 is located within the range of the support arm 312 of the tray support 310 .

[0115] refer to Fig. 22 As shown, a stopper 340 may be further disposed in the cavity body 110 , and the stopper 340 is configured to adjust the height of the ejector pins 330 ; each stopper 340 is located below its corresponding ejector pin 330 .

[0116] In this embodiment, the stopper 340 can support the ejector pins 330 after the substrate tray 320 is lowered. The lower ends of the ejector pins 330 contact the stopper 340, and the upper surfaces of the ejector pins 330 contact the substrate 400. The upper surfaces of the ejector pins 330 on the substrate tray 320 form a contact surface. If the upper surfaces formed by the ejector pins 330 are different in height, the substrate 400 will be tilted.

[0117] In order to keep the substrate 400 as horizontal as possible when being caught by the ejector pin 330, the thickness of the stopper 340 is made into different sizes, and there is a slight difference in thickness between each stopper 340. Of course, there can be multiple stoppers 340 of the same thickness. By using stoppers 340 of different or same thicknesses, the ejector pin 330 can catch or support the substrate 400 with consistent height, thereby ensuring that the substrate 400 will not tilt.

[0118] In one implementation, the lower wall of the cavity body 110 has a second groove, which is recessed downward from the upper surface of the lower wall, and the upper surface of the lower wall is a plane; the stop member 340 includes a lower mounting portion and an upper supporting portion, and the lower surface of the mounting portion of the stop member 340 abuts against the bottom of the second groove for positioning, and the supporting portion of the stop member 340 is used to support the ejector pin 330.

[0119] In this embodiment, a second groove is provided on the inner surface of the lower wall of the cavity body 110, and a stopper 340 is arranged in the second groove. In the vertical direction, the stopper 340 cooperates with the ejector pin 330, and the same or different specifications (i.e., different thicknesses) of the stopper 340 are used to achieve leveling of the ejector pin 330. For the stopper 340, its mounting portion extends into the second groove so that the stopper 340 is supported inside the cavity body 110. The mounting length of the mounting portion below the stopper 340 needs to be slightly greater than the depth of the second groove to ensure that the lower surface of the mounting portion of the stopper 340 can smoothly abut against the bottom of the second groove, thereby enhancing the stability and accuracy of the stopper 340, and thereby making the ejector pin 330 more stable when supporting the substrate 400.

[0120] In one embodiment, the stopper 340 is installed and removed using a corresponding installation and removal tool. When the installation portion of the stopper 340 is used to position the stopper 340, there is generally a gap between the lower surface of the support portion of the stopper 340 and the upper surface of the lower wall of the cavity body 110. In this embodiment, the gap is configured as an operating space for the installation and removal tool, thereby facilitating the smooth installation and removal of the stopper 340. Exemplarily, the height of the gap is 2 mm to 5 mm.

[0121] In one implementation, the side surface of the support portion of the stopper 340 has an annular groove. In addition to leaving a gap between the stopper 340 and the upper surface of the lower wall of the cavity body 110, the present embodiment can also directly open an annular groove on the stopper 340, which can also facilitate the installation and removal tools to clamp the stopper 340.

[0122] The annular groove on the stopper 340 cooperates with the installation tool, and clamping is achieved by shape matching and friction, thereby ensuring the stability and accuracy of the stopper 340 during the assembly process.

[0123] In the present embodiment, the film transfer port 210 of the air inlet flange 200 of the semiconductor reaction chamber is connected to the lower cavity of the cavity, so the substrate 400 enters the cavity by transmission from the lower cavity, so that the upper cavity space of the semiconductor reaction chamber is smaller and the height is lower, the flow rate of the reaction gas is more stable, the quality of thin film deposition is improved, and the usage of deposition reaction gas is reduced.

[0124] Another embodiment of the present invention provides a method for using a semiconductor reaction chamber, which can be used as the semiconductor reaction chamber described above, referring to Fig.24 As shown, method 2400 includes: S2410, after the ejector pin is supported on the lower wall of the semiconductor reaction chamber or the ejector pin is supported on the stopper, the robot is configured to transfer the substrate from the film transfer port of the semiconductor reaction chamber into the semiconductor reaction chamber and drop the substrate onto the upper surface of the ejector pin; S2420, the robot withdraws from the semiconductor reaction chamber; S2430, the tray support drives the substrate tray to rise to the process position, which is the position where the substrate is subjected to thin film deposition.

[0125] In this embodiment, the process position is the position of thin film deposition. The substrate 400 is transferred into the semiconductor reaction chamber at the film transfer port 210. Since the ejector pin 330 cannot actively unload the substrate 400, a robot is required to drop the substrate 400 onto the upper surface of the ejector pin 330. During the process of transferring the substrate 400 into the semiconductor reaction chamber, both the robot and the support 300 are active in the lower chamber of the semiconductor reaction chamber. Therefore, the upper chamber of the semiconductor reaction chamber is mainly used for the flow of reaction gases, and there is no need to design a larger upper chamber space and a higher upper chamber height.

[0126] The semiconductor reaction chamber mentioned in this embodiment can refer to the above-mentioned embodiment, and the corresponding component structure details are not expanded here. The method of using the semiconductor reaction chamber of this embodiment can be applied to the semiconductor reaction chamber of the above-mentioned embodiment. When the semiconductor reaction chamber is in use, because the film transmission port 210 of the air inlet flange 200 is connected to the lower cavity of the cavity, the substrate 400 enters the cavity in the lower cavity transmission mode, the upper cavity space of the semiconductor reaction chamber is smaller and the height is lower, the flow rate of the reaction gas is more stable, the quality of thin film deposition is improved, and the amount of deposition reaction gas used is reduced.

[0127] The basic concepts have been described above. Obviously, for those skilled in the art, the above invention disclosure is only used as an example and does not constitute a limitation of the present application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements and amendments to the present application. Such modifications, improvements and amendments are suggested in the present application, so such modifications, improvements and amendments still belong to the spirit and scope of the exemplary embodiments of the present application.

[0128] It should be noted that in order to simplify the description of the disclosure of this application and thus help understand one or more embodiments of the invention, in the above description of the embodiments of this application, multiple features are sometimes combined into one embodiment, figure or description thereof. However, this disclosure method does not mean that the features required by the object of this application are more than the features mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.

[0129] Although the present application has been described with reference to the current specific embodiments, ordinary technicians in this technical field should recognize that the above embodiments are only used to illustrate the present application, and various equivalent changes or substitutions may be made without departing from the spirit of the present application. Therefore, as long as the changes and modifications to the above embodiments are within the essential spirit of the present application, they will fall within the scope of the claims of the present application.

Claims

1. A semiconductor reaction chamber, characterized in that: include: A cavity, the cavity comprising a cavity body and a chamber flange fixed to one side of the cavity body, a guide plate and a preheating ring adjacent to the guide plate and located on the downstream side of the guide plate are arranged inside the cavity body, the area above the guide plate and the preheating ring is the cavity upper cavity, and the area below the guide plate and the preheating ring is the cavity lower cavity; as well as An air inlet flange, the air inlet flange is located on a side of the chamber flange away from the cavity body, the air inlet flange has a film transmission port and an air inlet channel; the film transmission port is connected to the fluid of the lower cavity of the cavity, the air inlet channel is arranged inside the air inlet flange and located above the film transmission port, and the air outlet of the air inlet channel is connected to the upper cavity of the cavity.

2. The semiconductor reaction chamber according to claim 1, wherein: The air inlet flange also includes a scavenging passage, which is arranged in the air inlet flange and below the blade transfer port; an air outlet of the scavenging passage is connected to the lower cavity of the cavity.

3. The semiconductor reaction chamber according to claim 1, wherein: The air inlet passage comprises a first vertical section and a first horizontal section, the first end of the first vertical section is an air inlet, the second end of the first vertical section is fluidically connected to the first end of the first horizontal section; the second end of the first horizontal section is an air outlet.

4. The semiconductor reaction chamber according to claim 3, characterized in that: The air inlet passage further comprises a first bending passage; the first bending passage is connected between the first vertical section and the first horizontal section; and / or The air intake passage also includes a first buffer zone; the first buffer zone is connected between the first vertical section and the first horizontal section.

5. The semiconductor reaction chamber according to claim 2, wherein: The scavenging passage comprises a second vertical section and a second horizontal section, wherein the first end of the second vertical section is an air inlet, the second end of the second vertical section is fluidically connected to the first end of the second horizontal section, and the second end of the second horizontal section is an air outlet.

6. The semiconductor reaction chamber according to claim 5, characterized in that: The scavenging passage further comprises a second bending passage; the second bending passage is connected between the second vertical section and the second horizontal section; and / or The scavenging passage further includes a second buffer zone connected between the second vertical section and the second horizontal section.

7. The semiconductor reaction chamber according to claim 2, wherein: The air outlet of the scavenging channel is arranged in multiple rows; The outlet directions of the multiple rows of outlets have different inclination angles.

8. The semiconductor reaction chamber according to any one of claims 2 to 7, characterized in that: The outlet direction of the air outlet of the scavenging channel is toward the first area, wherein the first area is the area where the gap between the preheating ring and the guide plate is located.

9. The semiconductor reaction chamber according to claim 8, characterized in that: The outlet direction of at least a portion of the air outlets of the scavenging passages is toward at least a portion of the second area, wherein the second area is an area where the gap between the preheating ring and the cavity body is located.

10. The semiconductor reaction chamber according to claim 8, wherein: A guide channel is provided on one side of the guide plate close to the preheating ring, the guide channel is located inside the guide plate and the air inlet of the guide channel is located below the guide plate, the air outlet of the guide channel faces the preheating ring, and the air outlet direction of the air outlet of the scavenging channel faces the air inlet of the guide channel.

11. The semiconductor reaction chamber according to claim 8, wherein: A guide arc surface is provided on one side of the guide plate close to the preheating ring, and the guide arc surface is configured to guide the purge gas to blow toward the preheating ring; the outlet direction of the air outlet of the purge channel is toward the guide arc surface.

12. The semiconductor reaction chamber according to claim 1, wherein: The outlet direction of the air outlet of the air inlet channel has an angle with the process plane, and the outlet direction of the air outlet of the air inlet channel is toward the lower cavity of the cavity; the process plane is the plane where the upper surface of the substrate is located when the substrate is processed in the semiconductor reaction chamber.

13. The semiconductor reaction chamber according to claim 1, wherein: The air inlet flange also includes a scavenging channel, which is arranged in the air inlet flange and located above the blade transfer port; the air outlet of the scavenging channel is connected to the lower cavity of the cavity.

14. The semiconductor reaction chamber according to claim 1, wherein: Also included is a support member, the support member including a tray support, a substrate tray and an ejector pin; The substrate tray is arranged on the tray support; the ejector pin is movably arranged on the substrate tray, and when the ejector pin is supported by the substrate tray, the upper surface of the ejector pin is flush with the upper surface of the substrate tray or is located below the upper surface of the substrate tray; The tray support comprises a supporting shaft and a plurality of supporting arms; one end of the plurality of supporting arms is connected to the supporting shaft, and the other end of the plurality of supporting arms is connected to the substrate tray.

15. The semiconductor reaction chamber according to claim 14, wherein: A variable column is connected to the upper end of each support arm, and the variable column is configured to adjust the horizontality of the substrate tray.

16. The semiconductor reaction chamber according to claim 15, wherein: The upper end of the support arm has a first groove, the lower end of the variable column matches the first groove, and the lower end of the variable column is located in the first groove.

17. The semiconductor reaction chamber according to claim 16, wherein: A stopper is also provided in the cavity body, and the stopper is configured to adjust the height of the ejector pin; each of the stoppers is located below the corresponding ejector pin.

18. The semiconductor reaction chamber according to claim 17, wherein: The lower wall of the cavity body has a second groove, which is recessed downward from the upper surface of the lower wall, and the upper surface of the lower wall is a plane; the stopper includes a mounting portion at the bottom and a supporting portion at the top, the lower surface of the mounting portion of the stopper abuts against the bottom of the second groove for positioning, and the supporting portion of the stopper is used to support the ejector pin.

19. A method for using a semiconductor reaction chamber, characterized in that: A semiconductor reaction chamber as claimed in any one of claims 17 to 18, comprising: After the ejector pin is supported on the lower wall of the semiconductor reaction chamber or the ejector pin is supported on the stopper, the robot is configured to transfer the substrate from the film transfer port of the semiconductor reaction chamber into the semiconductor reaction chamber and drop the substrate onto the upper surface of the ejector pin; The robot arm exits the semiconductor reaction chamber; The tray support drives the substrate tray to rise to a process position, where the process position is a position where thin film deposition is performed on the substrate.

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