Method for testing temperature zone distribution of flash memory medium by using erasing time and storage medium

Abstract

The invention discloses a method for testing temperature zone distribution of a flash memory medium by using erasure time and a storage medium, and the method comprises the following steps: in a continuous temperature changing environment, commanding the flash memory medium to erase data according to a preset period and sample the erasure time, counting average erasure time in a sampling interval, and taking the maximum or minimum erasure time according to a temperature change trend; calculating an erasure time change rate R value according to the average erasure time and the maximum or minimum erasure time, and judging whether the sampling interval is in a variable temperature area or a stable temperature area; for the sampling interval in the stable temperature zone, if the sampling frequency reaches a preset value, sampling is stopped; after all the stable temperature zones are found out, sampling is stopped, and the corresponding erasing time of entering each stable temperature zone is recorded; according to the erasing time of the to-be-tested flash memory medium, the type of the temperature interval where the to-be-tested flash memory medium is located is judged. According to the invention, the type of the temperature zone where the flash memory medium is located can be judged according to the erasing time of the flash memory medium.

Description

Technical Field

[0001] The present invention relates to the technical field of non-volatile memory characteristic analysis, and in particular to a method for testing temperature zone distribution of a flash memory medium by using erasure time and a storage medium. Background Art

[0002] Flash memory chips are a type of non-volatile memory used to store data. They are widely used in mobile devices, consumer electronics devices, computing devices, embedded systems, industrial control, medical, automotive electronics and other fields. The core component of data storage is NAND flash memory, and its reliability is directly related to the integrity and security of stored data. Through rigorous reliability testing, potential storage problems can be discovered and repaired in a timely manner to prevent data loss, damage or tampering. Therefore, how to efficiently evaluate the stability of flash memory under different temperature conditions, especially for flash memory chips in the harsh scenarios of high temperature writing data and low temperature reading data, how to use simple and easy-to-measure parameters to preliminarily determine the actual temperature tolerance range and type of flash memory chips is very important.

[0003] In order to read the temperature of the flash memory chip, the existing solution usually requires the master to send a temperature reading command to the flash memory chip controller, and then read the flash memory temperature through the internal temperature sensor. This approach will occupy additional resources of the master and flash memory controller, and the temperature read is generally the node temperature of the chip. The node temperature is related to the ambient temperature, chip heating power and thermal resistance. It is a core indicator to characterize the failure of the PN junction of the flash memory chip, but it is a different level of problem from the temperature tolerance of the flash memory medium. Based on the defects of the existing technical solution, the present invention proposes a method and storage medium for testing the temperature zone distribution of the flash memory medium using the erase time. Summary of the invention

[0004] The main purpose of the present invention is to provide a method and storage medium for testing the temperature zone distribution of a flash memory medium by using the erasure time, and to determine the temperature zone of the flash memory medium according to the erasure time of the flash memory medium.

[0005] The technical solution adopted by the present invention is a method for testing the temperature zone distribution of a flash memory medium using the erasure time, comprising:

[0006] In a continuously changing temperature environment, command the flash memory medium to erase data according to a preset cycle and sample the erasure time, calculate the average erasure time within the sampling interval, and take the maximum or minimum erasure time according to the temperature change trend;

[0007] Calculate the erasing time change rate R value according to the average erasing time and the maximum or minimum erasing time to determine whether the sampling interval is in a variable temperature zone or a stable temperature zone; for a sampling interval in a stable temperature zone, if the number of sampling times reaches a preset value, stop sampling;

[0008] After finding all stable temperature zones, stop sampling and record the erasure time corresponding to entering the boundary of each stable temperature zone;

[0009] The temperature range type of the flash memory medium to be tested is determined according to the erasure time of the flash memory medium to be tested.

[0010] According to the above technical solution, the method for instructing the flash memory medium to erase data according to a preset period includes the solid state drive periodically sending an erase command to the flash memory controller through the main control.

[0011] According to the above technical solution, based on the temperature change trend, if the maximum erasing time is taken, the method for calculating the erasing time change rate R value is: If the minimum erasing time is taken, the method for calculating the erasing time change rate R value is: Among them, T n is the average erase time, T max is the maximum erase time, T min is the minimum erase time.

[0012] According to the above technical solution, the continuous temperature change is a continuous temperature change, including continuous temperature increase, or continuous temperature decrease, or a continuous change of first temperature increase and then temperature decrease, or a continuous change of first temperature decrease and then temperature increase.

[0013] According to the above technical solution, the method for judging whether the sampling interval is in the changing temperature zone or the stable temperature zone according to the erasing time change rate includes: comparing the calculated erasing time change rate R value with the preset erasing time change rate R c Value comparison, if R value is greater than or equal to R c , then it is judged that the current sampling interval is in the changing temperature zone, otherwise it is in the stable temperature zone.

[0014] The method for finding all stable temperature zones according to the above technical solution includes: if a sampling interval in a variable temperature zone appears after multiple sampling intervals in the stable temperature zone appear continuously, according to the temperature change trend, the minimum or maximum erasure time of the sampling interval is used as the boundary erasure time of the stable temperature zone adjacent to the sampling interval, and the sampling time of each boundary erasure time is recorded accordingly;

[0015] Set the initial number of stable temperature zones to 0, and increase the number by 1 each time a new stable temperature zone is found.

[0016] According to the above technical solution, the maximum number of the stable temperature zones is 3.

[0017] According to the above technical solution, the statistical boundary erasure time is sorted;

[0018] According to the sorting results, the stable temperature zone corresponding to the shortest boundary erase time is the low temperature zone, the stable temperature zone corresponding to the middle boundary erase time is the normal temperature zone, and the stable temperature zone corresponding to the longest boundary erase time is the high temperature zone.

[0019] According to the above technical solution, the method for judging the temperature zone type of the flash memory medium to be tested based on the erasure time of the flash memory medium to be tested executing the erase command includes comparing the erasure time of the flash memory medium to be tested executing the erase command with the boundary erase time of each stable temperature zone.

[0020] The present invention also provides a computer storage medium storing a computer program, characterized in that when the computer program is executed by a processor, the steps of the method for testing the temperature zone distribution of a flash memory medium using the erasure time are implemented.

[0021] The present invention also provides a computer device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein when the processor executes the computer program, the steps of the above-mentioned method for testing the temperature zone distribution of a flash memory medium using the erasure time are implemented.

[0022] Compared with the prior art, the beneficial effects of the present invention are:

[0023] In order to read the temperature of the flash memory chip, the existing solution usually requires the master control to send a temperature reading command to the flash memory chip controller, and then read the flash memory temperature through the internal temperature sensor. This approach will occupy additional resources of the master control and flash memory controller, and the temperature read is generally the node temperature of the chip. The node temperature cannot represent the temperature tolerance of the flash memory medium. Using the method of the present invention, the internal firmware of the solid-state hard disk can collect the erase time through the erase command issued normally without occupying additional master control resources to estimate the test temperature range and high and low temperature types of the solid-state hard disk, and the temperature zone type judged by the erase time is strongly correlated with the medium array temperature.

[0024] In the wide temperature test of NAND flash memory chips as storage media, the process of writing data at high temperature and reading data at low temperature requires strict test conditions. However, the existing test methods often monitor the ambient temperature by means of a temperature box, etc., and lack effective parameter indicators to characterize the actual temperature that the flash memory chip can withstand. The present invention periodically executes the erase data command to sample and record the erase time of the flash memory medium, and then analyzes the corresponding erase time when the flash memory medium is in each stable temperature zone, establishes the association between the erase time and the temperature zone type, and determines the temperature zone type of the flash memory medium by testing the erase time, which can substantially reflect the temperature tolerance of the flash memory medium. Testers can combine the erase time data collected on the solid-state hard disk serial port log to determine whether the solid-state hard disk currently being tested is in a high temperature, normal temperature or low temperature state and conduct targeted tests.

[0025] In the prior art, as a tester of storage products such as solid-state hard disks, for the abnormal power-off scenario of the hard disk, it is often necessary to construct the most complex processing scenario inside the firmware during the abnormal power-off process. This scenario usually consumes the largest capacitance value on the hard disk, and the existing means usually believe that the erase command operation time is constant, which often leads to the depletion of the capacitor on the hard disk under abnormal power-off conditions under high temperature conditions, and the firmware abnormal power-off process processing is not completed, and data is lost. The present invention can test the erase time value of the solid-state hard disk under high temperature and abnormal power-off scenarios to construct the most stringent test scenario for the solid-state hard disk, thereby testing the capacitor power supply time of the solid-state hard disk in the power-off state.

[0026] Finally, the present invention samples and records the erase time of the flash memory medium that periodically executes the erase data command, and then analyzes the corresponding erase time when the flash memory medium is in each constant temperature zone, establishes the association between the erase time and the temperature zone type, and determines the temperature zone type of the flash memory medium by testing the erase time. This can be applied to various test scenarios that require strict control of the flash memory chip temperature.

[0027] Of course, any product implementing the present invention does not necessarily need to achieve all of the advantages described above at the same time. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0029] Figure 1 A flow chart of a method for testing the temperature zone distribution of a flash memory medium using the erasure time according to an embodiment of the present invention;

[0030] Figure 2 This is a diagram of the operation steps of testing the temperature zone distribution of a flash memory medium using the erasure time according to an embodiment of the present invention;

[0031] Figure 3 A curve diagram showing the relationship between the average erasing time of the flash memory particle samples and the particle sample sequence number according to an embodiment of the present invention;

[0032] Figure 4 The figure is a curve diagram showing the relationship between the average erasing time of the flash memory chip and the test environment temperature according to the embodiment of the present invention. DETAILED DESCRIPTION

[0033] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0034] It should be noted that the illustrations provided in the embodiments of the present invention are only used to illustrate the basic concept of the present invention in a schematic manner. Therefore, the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout type may also be more complicated.

[0035] In the present invention, it is also necessary to explain that, if the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. appear, the orientation or position relationship indicated is based on the orientation or position relationship shown in the drawings, which is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. In addition, if the terms "first" and "second" appear, they are only used for description and distinction purposes, and cannot be understood as indicating or implying relative importance.

[0036] Example 1

[0037] In view of the shortcomings of the existing methods in the background technology, this embodiment provides a method for testing the temperature distribution of a flash memory medium using the erasure time. The process is as follows: Figure 1 As shown, including:

[0038] S1. In a continuously heated environment, command the flash memory medium to erase data and perform sampling according to a preset cycle, and record the average erasure time and the minimum erasure time within the sampling interval.

[0039] Specifically, a flash memory block is randomly selected, and the internal firmware of the solid-state drive sends an erase command to the flash memory controller through the master control and starts timing. The erase time from the start of sending the command to the completion of the erase command is recorded, and the average erase time T in the sampling interval is calculated. n and the minimum erase time T min .

[0040] Specifically, the solid state drive receives and processes normal read and write commands from the host during the intervals between erase commands.

[0041] S2, according to the average erasure time T recorded n and the minimum erase time T minCalculate the erasing time change rate of each sampling, and determine whether the sampling interval is in a variable temperature zone or a stable temperature zone according to the erasing time change rate R. The temperature change in the stable temperature zone is very small and can be ignored. For example, the temperature fluctuation or jitter amplitude in the stable temperature zone is less than 1%.

[0042] Specifically, the calculation formula of the erasure time change rate R is:

[0043] Specifically, the method for judging whether the sampling interval is in the changing temperature zone or the stable temperature zone according to the erasing time change rate R is as follows: comparing the calculated erasing time change rate R with the preset erasing time change rate R c Compare, if the R value is greater than or equal to R c , then the current sampling interval is judged to be in the variable temperature zone. If the R value is less than R c , it is determined that the current sampling interval is in a stable temperature zone. In this embodiment, the preset erasing time change rate R c The value range is 10% to 15%.

[0044] Specifically, if the sampling interval is in a stable temperature zone and the number of sampling times is greater than a preset value, the sampling is stopped. In this embodiment, the preset value is 100.

[0045] S3. Determine the positions of all stable temperature zones and the erasing times corresponding to their boundaries.

[0046] Specifically, the method for determining all stable temperature zones includes: setting the initial number of stable temperature zones to 0, after sampling starts, if a sampling interval in a stable temperature zone appears after multiple sampling intervals in a stable temperature zone appear in succession, then the minimum erasure time of the sampling interval is recorded as the boundary erasure time of the stable temperature zone adjacent to the sampling interval, and the sampling time of each boundary erasure time is recorded accordingly, and the maximum number of stable temperature zones is 3, and when three different stable temperature zones are found, the sampling cycle is exited. Furthermore, since the erasure time in the same stable temperature zone is basically unchanged, the erasure time of different stable temperature zones is quite different, so the difference in the boundary erasure time can be compared to determine whether a new stable temperature zone has been found.

[0047] S4. Determine the temperature range type of the flash memory medium to be tested according to the time when the flash memory medium to be tested erases data.

[0048] Specifically, the boundary erasing time of each stable temperature zone is sorted from low to high;

[0049] According to the sorting results, the stable temperature zone corresponding to the shortest erasure entry time is the low temperature zone, the stable temperature zone corresponding to the middle erasure entry time is the normal temperature zone, and the stable temperature zone corresponding to the longest erasure entry time is the high temperature zone; further, according to the pre-test results, the low temperature zone is -40℃~5℃, the normal temperature zone is 15℃~50℃, the high temperature zone is 60℃~85℃, and 5℃~15℃ and 50℃~60℃ are variable temperature zones.

[0050] Specifically, the erasure time of the flash memory medium to be tested for executing the erase command is compared with the boundary erase time of each stable temperature zone. If the erase time of the flash memory medium to be tested is equal to the boundary erase time of a stable temperature zone, the flash memory medium to be tested is in the stable temperature zone; if the erase time of the flash memory medium to be tested is significantly lower than the entry erase time of a stable temperature zone, the temperature of the flash memory medium to be tested is lower than the temperature of the stable temperature zone, and the flash memory medium to be tested is in a variable temperature zone or a stable temperature zone with a lower temperature; if the erase time of the flash memory medium to be tested is significantly higher than the boundary erase time of a stable temperature zone, the flash memory medium to be tested is in a variable temperature zone or a stable temperature zone with a higher temperature.

[0051] The method provided in this embodiment uses the erase time to test the temperature zone distribution of the flash memory medium. The relationship between the erase time and the temperature zone of the flash memory medium is tested during the heating process of the flash memory medium. It is worth noting that any process that tests the relationship between the erase time and the temperature zone of the flash memory medium through continuous temperature changes can be used as an embodiment of the present invention.

[0052] Example 2

[0053] The present invention creatively proposes a method for testing the temperature distribution of a flash memory medium using the erasure time. The specific test operation process is as follows: Figure 2 As shown, taking the heating process as an example.

[0054] (1) A block of a flash memory particle is randomly selected, and the flash memory particle block is not a factory bad block. The internal firmware of the solid-state drive sends an erase command to the flash memory controller through the master control and counts the time from the master control sending the erase command for the first time in a sampling temperature zone to receiving the command completion, which is recorded as T n1 After the erasure is completed, the SSD receives and processes the normal read and write commands from the host, loops the above operations, and records the time T from the second time the master controller sends the erase command in a sampling temperature zone to the time the command is received. n2 , ..., the time T from the master controller sending the erase command for the i-th time in a sampling temperature zone to receiving the command completion ni .

[0055] (2) Count the average erase time T of the flash memory particles to complete the erase command in this temperature range n , T n The calculation method is At the same time, take the minimum erase time Tmin , calculate the erasure time change rate R, the calculation formula is as follows:

[0056] (3) Compare the erase time change rate R value in the current test interval with the set R c , R c The value range of is 10% to 15%. If the R value is less than Rc and the sampling times have not reached the preset times, continue to operate from step (1).

[0057] (4) If the erase time change rate R is greater than or equal to R c At this time, the number of temperature intervals increases, and the average erase time T of the current test interval of the flash memory chip is updated. n The minimum erase time T min .

[0058] (5) Continue to search for the next temperature interval until all three temperature intervals are searched, and then sort the minimum erasing times in the above three temperature zones, which are recorded as T l , T c and T m , and the corresponding sampling times are denoted as t l ,t c and t m .

[0059] This embodiment can use T l , T c , T m ,t l ,t c and t m The value of determines the time when the tested flash memory chip enters the low temperature zone, normal temperature zone and high temperature zone during the temperature cross test of the solid state drive firmware and the corresponding erasure time to complete the erase command. By testing the erase time, the solid state drive firmware can clearly determine the temperature zone status and temperature zone type of the flash memory media array.

[0060] Example 3

[0061] certainly, Figure 2 The maximum erase time T is also given in max In the embodiment of the present invention, the process of estimating the temperature zone type distribution by using the average erasing time of the flash memory chip is completed during the cooling process. Based on the embodiment 2, the difference of this embodiment is that:

[0062] 1. During sampling, the maximum erasure time T within the sampling interval is counted max .

[0063] 2. The formula for calculating the erase time change rate R inside the SSD firmware is: ×100%.

[0064] 3. If the erase time change rate R value is greater than or equal to R c At this time, the number of stable temperature zones is increased, and the average erase time T of the current test interval of the flash memory chip is updated. n The maximum erase time T max .

[0065] Compared with the second embodiment, this embodiment can complete the process of estimating the temperature zone type distribution by using the average erasing time of the flash memory chip during the cooling process by adjusting the above operations.

[0066] Example 4

[0067] In order to make the method of reading the temperature of a flash memory chip of the present invention more feasible, the present invention conducts a test experiment on actual flash memory particles to test the relationship between the average erase time of the flash memory particle samples and the particle sample serial number.

[0068] like Figure 3 and 4 As shown in the figure, a certain model of flash memory TLC particles from a certain manufacturer were used for erase and write tests. The particles of this type came from different batches and different wafers of the manufacturer, with a total of 410 particles, including 140 particles in the -25℃ low temperature group, 150 particles in the 30℃ normal temperature group, and 120 particles in the 85℃ high temperature group. The above 410 samples were numbered in sequence, and the average erase time of each sample under the three temperature conditions was counted. The relationship between the average erase time of the samples and the particle sample number was plotted as shown in the figure. Figure 3 shown.

[0069] Figure 3 It shows that the average erase time of the flash memory chip is closely related to the ambient temperature of the chip. Based on the average erase time test data of the above 410 flash memory samples, it can be found that within a certain temperature range, the erase time changes of different flash memory particle samples can be ignored. The average erase time is the shortest in the -25°C low temperature zone, which is 6.9 milliseconds, followed by the 30°C normal temperature zone, which is 8.2 milliseconds, and the longest in the 85°C high temperature zone, which is 9.7 milliseconds. This can prove the inventive point of the present invention, that is, the individual differences between samples are small, and the erase time can be used to characterize the temperature tolerance of the flash memory.

[0070] In order to prove the relationship between the average erasing time of the flash memory chip and the ambient temperature in the method of the present invention, a chip is randomly selected from the above 410 chips to test the relationship between the average erasing time and the ambient temperature in the temperature range of -40℃ to 85℃, and the step size is set to 5℃. The test results are as follows Figure 4 shown.

[0071] In the above Figure 4We found that the average erase time of this model of flash memory particles is not linearly related to the ambient temperature, but also presents three ranges: a low temperature range of -40°C to 5°C, a normal temperature range of 15°C to 50°C, and a high temperature range of 60°C to 85°C. In the same temperature range, the average erase time changes very little and basically remains near a constant value, which meets the requirements of the detection method of the present invention.

[0072] The above experimental results show that the average erase time of the flash memory chip has a greater relationship with the ambient temperature of the chip, but has less relationship with the individual differences of the samples. Within a certain temperature range, the erase time changes of different flash memory particle samples can be ignored. The average erase time of the flash memory chip is not linearly related to the temperature, but presents three intervals: the low temperature zone of -40℃~5℃, the normal temperature zone of 15℃~50℃ and the high temperature zone of 60℃~85℃. The average erase time changes very little in the same temperature zone and basically remains near a constant value. Based on the above experimental results, the method of using the erase time to test the temperature zone distribution of the flash memory medium of the present invention has extremely strong applicability.

[0073] Example 5

[0074] In other experiments that can be implemented, the flash memory media that can use the erase time to test the temperature zone distribution of the flash memory media include but are not limited to SLC, MLC, TLC, QLC and PLC types of flash memory particles. The test method is similar to the above embodiment, and those skilled in the art can refer to and implement it based on embodiments 1-4, which will not be repeated here.

[0075] Example 6

[0076] Different from Examples 1-5, in this embodiment, the average erase time to find the chip temperature is not limited to the heating process or the cooling process, but includes any continuous temperature change, including rising first and then falling, falling first and then rising, or both falling and rising, as long as one of the continuous segments contains a continuous temperature change stage.

[0077] Example 7

[0078] This embodiment provides a computer storage medium having a computer program stored thereon. When the computer program is executed by a processor, the steps of the method for testing the temperature zone distribution of a flash memory medium by using the erasure time described in Embodiments 1-5 are implemented.

[0079] Example 8

[0080] This embodiment provides a computer device, including a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, the steps of the method for testing the temperature zone distribution of a flash memory medium using the erasure time described in Embodiments 1-5 are implemented.

[0081] In summary, the method and storage medium for testing the temperature zone distribution of a flash memory medium using the erase time provided by the present invention determine the relationship between the temperature zone in which the flash memory medium is located and the erase time through testing, thereby realizing the determination of the temperature zone in which the flash memory medium is located by testing the erase time of the flash memory medium. This method has multiple application scenarios, such as judging the temperature state of a solid-state hard disk and constructing a strict solid-state hard disk power-off test scenario.

[0082] It should be pointed out that, according to the needs of implementation, the various steps / components described in this application can be split into more steps / components, and two or more steps / components or partial operations of steps / components can be combined into new steps / components to achieve the purpose of the present invention.

[0083] The order of execution of each step in the above embodiment does not mean the order of execution. The order of execution of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiment of the present application.

[0084] It should be understood that those skilled in the art can make improvements or changes based on the above description, and all these improvements and changes should fall within the scope of protection of the appended claims of the present invention.

Claims

1. A method for testing the temperature distribution of a flash memory medium using erase time, characterized in that: include: In a continuously changing temperature environment, command the flash memory medium to erase data according to a preset cycle and sample the erasure time, calculate the average erasure time within the sampling interval, and take the maximum or minimum erasure time according to the temperature change trend; Calculate the erasing time change rate R value according to the average erasing time and the maximum or minimum erasing time to determine whether the sampling interval is in a variable temperature zone or a stable temperature zone; for a sampling interval in a stable temperature zone, if the number of sampling times reaches a preset value, stop sampling; After finding all stable temperature zones, stop sampling and record the erasing time corresponding to entering each stable temperature zone; The temperature range type of the flash memory medium to be tested is determined according to the erasure time of the flash memory medium to be tested.

2. The method for testing the temperature distribution of a flash memory medium using the erasure time according to claim 1, characterized in that: The method for instructing the flash memory medium to erase data according to a preset period includes the solid state hard disk periodically sending an erase command to the flash memory controller through a main control.

3. The method for testing the temperature distribution of a flash memory medium by using the erasure time according to claim 1, characterized in that: The method for calculating the erase time change rate R value includes taking the absolute value of the difference between the average erase time and the maximum or minimum erase time, and comparing the absolute value with the corresponding maximum or minimum erase time.

4. The method for testing the temperature distribution of a flash memory medium by using the erasure time according to claim 3, characterized in that: The method for judging whether the sampling interval is in a changing temperature zone or a stable temperature zone according to the erasing time change rate comprises: comparing the calculated erasing time change rate R value with the preset erasing time change rate R c Value comparison, if R value is greater than or equal to R c , then it is judged that the current sampling interval is in the changing temperature zone, otherwise it is in the stable temperature zone.

5. The method for testing the temperature distribution of a flash memory medium by using the erasure time according to claim 4, characterized in that: The method for finding out all stable temperature zones includes: if a sampling interval in a variable temperature zone appears after multiple sampling intervals in the stable temperature zone appear continuously, according to the temperature change trend, the minimum or maximum erasure time of the sampling interval is counted as the boundary erasure time of the stable temperature zone adjacent to the sampling interval, and the sampling time of each boundary erasure time is correspondingly recorded; Set the initial number of stable temperature zones to 0, and increase the number by 1 each time a new stable temperature zone is found.

6. The method for testing the temperature distribution of a flash memory medium by using the erasure time according to claim 5, characterized in that: The maximum number of stable temperature zones is 3.

7. The method for testing the temperature distribution of a flash memory medium by using the erasure time according to claim 6, characterized in that: Sort the statistical boundary erasure time; According to the sorting results, the stable temperature zone corresponding to the smallest boundary erase time is the low temperature zone, the stable temperature zone corresponding to the middle boundary erase time is the normal temperature zone, and the stable temperature zone corresponding to the largest boundary erase time is the high temperature zone.

8. The method for testing the temperature distribution of a flash memory medium by using the erasure time according to claim 7, characterized in that: The method for determining the temperature zone type of the flash memory medium to be tested based on the erasure time of the flash memory medium to be tested executing the erasure command includes comparing the erasure time of the flash memory medium to be tested executing the erasure command with the boundary erasure time of each stable temperature zone.

9. A computer storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method for testing the temperature zone distribution of a flash memory medium by using the erasure time described in any one of claims 1 to 8 are implemented.

10. A computer device, characterized in that: The invention comprises a memory, a processor and a computer program stored in the memory and executable on the processor, wherein when the processor executes the computer program, the steps of the method for testing the temperature zone distribution of a flash memory medium by using the erasure time as described in any one of claims 1 to 8 are implemented.

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