Rectifying and boosting circuit structure capable of being stacked

Abstract

The invention relates to the technical field of boosted circuits, in particular to a stackable rectifying boosted circuit structure which comprises an input signal source and a boosted circuit unit, the boosted circuit unit is composed of at least two stacked boosted units, and each boosted unit comprises a diode, an energy storage capacitor, an MOS device and a current limiting resistor. And the output end of each layer of boosting unit is in cascade connection with the input end of the next layer of boosting unit layer by layer to form a laminated boosting structure so as to output higher voltage. Through the multi-layer cascade boosting design and the control of the current-limiting resistor, the current speed increase in the capacitor charging process is effectively inhibited, and the charging efficiency is improved. Therefore, the stability of the output voltage is greatly improved.

Description

Technical Field

[0001] The present invention relates to the technical field of boost circuits, and more particularly to a stackable rectifier boost circuit structure. Background Art

[0002] In isolated switch drivers, robust protection functions are critical, and traditionally such protection functions have been isolated using mechanical relays or optocouplers.

[0003] Although mechanical relays can achieve circuit isolation, they are large in size, have slow mechanical response speed, limited lifespan, and are prone to mechanical fatigue in frequent switching working environments, affecting stability and durability.

[0004] Optocouplers can achieve isolation through photoelectric conversion, and have a fast response speed and relatively high isolation effect. However, optocouplers are sensitive to operating temperature and noise, and are easily affected by environmental factors, resulting in insufficient stability of the protection function. In addition, optocouplers generally can only provide limited isolation voltage and cannot achieve high-voltage floating regulated power supply output.

[0005] Based on the above shortcomings, this technology designs a new circuit structure to improve the stability of the protection function of the isolated switch driver and provide a relatively higher voltage floating regulated power rail without an additional bias power supply. Summary of the invention

[0006] In view of the shortcomings of the prior art, the object of the present invention is to provide a stackable rectifier boost circuit structure based on transformer coupling and charge pump boost.

[0007] To achieve the above object, the present invention provides the following technical solutions: A stackable rectifier boost circuit structure includes an input signal source and a boost circuit unit. The boost circuit unit is composed of at least two stacked boost units, each of which includes a diode, an energy storage capacitor, a MOS device and a current limiting resistor; The output end of each layer of boosting unit is cascade-connected with the input end of the next layer of boosting unit layer by layer to form a stacked boosting structure so as to output a higher voltage.

[0008] The present invention is further configured as follows: the input signal sources (VL1, VL2) are respectively connected to the diodes (D1, D2) of the first-layer boost unit, and the MOS devices (M1, M2) of the first-layer boost unit are used to control the charge transfer between the energy storage capacitors (C1, C2), and achieve alternating conduction through the alternation of the input signal sources.

[0009] The present invention is further configured as follows: the input signal source (VL1) is connected to one end of a diode (D1), and the other end of the diode (D1) is connected to an energy storage capacitor (C1) and a source of a MOS device (M1); The input signal source (VL2) is connected to one end of a diode (D2), and the other end of the diode (D2) is connected to an energy storage capacitor (C2) and a source of a MOS device (M2); The diode (D1) and the diode (D2) form a first-stage rectifier, which is used to rectify the alternating voltage into a peak direct current voltage.

[0010] The present invention is further configured as follows: the gate of the MOS device (M1) is connected to an input signal source (VL1) via a current limiting resistor (R1), the source is connected to an energy storage capacitor (C1), and the drain is connected to a diode (D3); The gate of the MOS device (M2) is connected to the input signal source (VL2) through a current limiting resistor (R2), and its source is connected to the energy storage capacitor (C2).

[0011] The present invention is further configured as follows: a second-stage boost unit is superimposed on the first-stage boost unit, the second boost unit comprising a diode (D3) connected to the drain of the MOS device (M1), a diode (D4) connected to the drain of the MOS device (M2), the MOS device (M3) and the MOS device (M4); The other end of the diode (D3) is connected to the energy storage capacitor (C3), and the other end of the diode (D4) is connected to the energy storage capacitor (C4); The gate of the MOS device (M3) is connected to the input signal source (VL1) through a current limiting resistor (R3), its source is connected to the energy storage capacitor (C3), and its drain is connected to a diode (D5). The gate of the MOS device (M4) is connected to the input signal source (VL2) through a current limiting resistor (R4), the source is connected to a storage capacitor (C4), and the drain is connected to a diode (D6).

[0012] Compared with the shortcomings of the prior art, the beneficial effects of the present invention are: Isolation is achieved through the principles of inductor coils and transformers, and high voltage output is achieved through multi-layer cascaded boost units, ultimately providing a floating, regulated high voltage output power supply.

[0013] Through the multi-layer cascade boost design, combined with the control of the current limiting resistor, the current growth rate during the capacitor charging process is effectively suppressed, thereby greatly improving the stability of the output voltage. This feature ensures that the driver can continuously provide a stable floating high voltage during operation, providing more reliable power support for the protection function.

[0014] The output voltage can be flexibly adjusted by increasing or decreasing the number of layers. Compared with the relatively fixed output voltage in the prior art, the design of the present invention can better adapt to scenarios with different voltage level requirements and has higher applicability and expansibility. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic diagram of the overall module of the present invention; Figure 2 Schematic diagram of the circuit of the present invention. DETAILED DESCRIPTION

[0016] Reference Figure 1 to Figure 2 The embodiments of the present invention are further described.

[0017] The design of this circuit is a multi-layer cascade rectifier boost structure, which is suitable for isolated switch drivers. Its implementation process is to generate input excitation through the inductor coil and capacitor in parallel, boost it through the boost circuit, and finally rectify the output. The purpose of the boost structure is to gradually boost the alternating voltage of the input signal source through the stacked boost units, and output a higher voltage without changing the input excitation source.

[0018] The circuit is composed of multiple boost units, each of which contains a diode, energy storage capacitor, MOS device (MOSFET) and current limiting resistor. Each boost unit is cascaded layer by layer to form a stacked boost structure, and through the alternating characteristics of the input signal source, the MOS device is controlled to alternately conduct, so that the charge is transferred between the capacitors and the voltage is gradually increased.

[0019] The input signal sources (VL1, VL2) provide voltage signals for the first-layer boost unit respectively. The following is the detailed connection relationship: the input signal source VL1 is connected to the anode of D1 of the first-layer boost unit, and the input signal source VL2 is connected to the anode of the diode D2. Diode D1 and diode D2 form a rectifier structure, which is used to rectify the input alternating voltage signal into a peak DC voltage. The rectification process utilizes the unidirectional conductive characteristics of the diode. When the input signal is alternating, the diode is turned on in the positive direction and turned off in the negative direction, thereby rectifying the input alternating voltage into a pulsating DC signal.

[0020] In the first-level boost unit, diodes, energy storage capacitors, and MOSFETs work together to achieve charge rectification and transfer. The specific component connections and functions are as follows: The diode D1 and the diode D2 are connected to the input signal sources VL1 and VL2 respectively, and the cathodes are connected to one end of the energy storage capacitors (C1 and C2) and the sources of the MOS devices (M1 and M2).

[0021] The function of the energy storage capacitors C1 and C2 is to store the rectified charge and gradually increase the voltage on the capacitors, thereby forming a higher potential at the output end. The charging process of these capacitors is achieved through the alternation of the input signal. As the alternating signal changes, the charge gradually accumulates on the energy storage capacitors C1 and C2.

[0022] The function of MOS device M1 and MOS device M2 is to control the transfer of charge. The alternating voltage of the input signal source provides the initial voltage for the gate of MOS device M1 and MOS device M2 through the current limiting resistor (R1 and R2), ensuring that MOS device M1 and MOS device M2 can be turned on alternately when the signal is switched. When the gate voltage is high enough, the MOS device is turned on, so that the charge can be smoothly transferred from diode D1 and diode D2 to energy storage capacitor C1 and energy storage capacitor C2.

[0023] The current limiting resistors R1 and R2 are located between the input signal sources VL1 and VL2 and the gates of the MOS devices M1 and M2, respectively, and play the following two roles: Initial conduction: When the circuit starts or the signal switches, the current limiting resistor ensures that the gate can obtain voltage in time, so that the MOS device is turned on and the circuit can smoothly enter the boost working state.

[0024] During the gradual charging process of the energy storage capacitors C1 and C2, the current limiting resistor limits the current growth rate flowing through the MOS device, avoiding instability caused by excessive current and ensuring a more stable output voltage.

[0025] Based on the first-layer boost unit, the second-layer boost unit is connected in cascade to further increase the output voltage. The components of the second-layer boost unit are connected as follows: The anodes of the diodes D3 and D4 are connected to the drains of the first-layer MOS device M1 and the MOS device M2, respectively, and the cathodes are connected to one end of the energy storage capacitors C3 and C4, respectively, to form a second-stage rectifier structure.

[0026] The role of the diodes D3 and D4 here is to further rectify the pulsating voltage outputted by the first layer so that its charge can be transferred to the energy storage capacitors C3 and C4 of the second layer and gradually increase the potential.

[0027] Energy storage capacitors C3 and C4 are respectively connected to the cathode terminals of diodes D3 and D4, and are connected to the sources of MOS devices M3 and M4, for storing the rectified voltage from the first layer and boosting it to a higher potential to provide power support for the next stage boost unit or the final output.

[0028] The MOS devices M3 and M4 of the second layer boost unit are connected to the energy storage capacitors C3 and C4 respectively, and their functions are similar to those of the MOS devices M1 and M2 in the first layer, and are used to control the transfer of charges between the energy storage capacitors.

[0029] Gate drive: connected to the input signal source (VL1 and VL2) through current limiting resistors R3 and R4, providing alternating gate drive signals for MOS devices M3 and M4. The gate voltages of MOS devices M3 and M4 change with the alternation of input signals, ensuring alternating conduction and realizing the gradual transfer of charge from energy storage capacitors C3 and C4 to the next stage.

[0030] This design allows the voltage to be further increased by increasing the number of layers to meet higher output requirements. The multi-layer structure is connected in cascade layer by layer, and the output of each layer of booster unit is connected to the input of the next layer of booster unit. Each layer increases the potential in turn, and finally achieves the required output voltage. For example: The third layer: MOS devices, diodes and energy storage capacitors can be added on the basis of the second layer to further increase the voltage.

[0031] Cascade advantages: This cascade structure can meet the high voltage requirements in different applications by adjusting the number of stages. The output voltage can be precisely controlled by adjusting the number of layers, making the circuit design more flexible.

[0032] A major advantage of the circuit design is that it can output a floating regulated power rail without the need for an additional bias supply.

[0033] Through the alternating charging and discharging of the diodes and capacitors in each layer, the input alternating voltage is accumulated and rectified layer by layer, and the output voltage is gradually increased to achieve a voltage stabilization effect.

[0034] The circuit generates a floating regulated power rail at the output end which is higher than the main supply voltage. At the same time, it has the characteristics of electrical isolation, which provides a safer high-voltage floating power supply for the driver and meets the floating voltage requirements of the isolated switch driver.

[0035] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Common changes and substitutions made by those skilled in the art within the scope of the technical solution of the present invention should be included in the protection scope of the present invention.

Claims

1. A stackable rectifier boost circuit structure, comprising an input signal source and a boost circuit unit, characterized in that: The boost circuit unit is composed of at least two stacked boost units, each of which includes a diode, an energy storage capacitor, a MOS device and a current limiting resistor; The output end of each layer of boosting unit is cascade-connected with the input end of the next layer of boosting unit layer by layer to form a stacked boosting structure so as to output a higher voltage.

2. A stackable rectifier boost circuit structure according to claim 1, characterized in that: The input signal sources (VL1, VL2) are respectively connected to the diodes (D1, D2) of the first-layer boost unit, and the MOS devices (M1, M2) of the first-layer boost unit are used to control the charge transfer between the energy storage capacitors (C1, C2) and realize alternating conduction through the alternation of the input signal sources.

3. A stackable rectifier boost circuit structure according to claim 2, characterized in that: The input signal source (VL1) is connected to one end of a diode (D1), and the other end of the diode (D1) is connected to an energy storage capacitor (C1) and a source of a MOS device (M1); The input signal source (VL2) is connected to one end of a diode (D2), and the other end of the diode (D2) is connected to an energy storage capacitor (C2) and a source of a MOS device (M2); The diode (D1) and the diode (D2) form a first-stage rectifier, which is used to rectify the alternating voltage into a peak direct current voltage.

4. The stackable rectifier boost circuit structure according to claim 1, characterized in that: The gate of the MOS device (M1) is connected to the input signal source (VL1) through a current limiting resistor (R1), the source is connected to the energy storage capacitor (C1), and the drain is connected to a diode (D3); The gate of the MOS device (M2) is connected to the input signal source (VL2) through a current limiting resistor (R2), and its source is connected to the energy storage capacitor (C2).

5. The stackable rectifier boost circuit structure according to claim 2, characterized in that: A second-stage boost unit is stacked on the first-stage boost unit, the second boost unit comprising a diode (D3) connected to the drain of the MOS device (M1), a diode (D4) connected to the drain of the MOS device (M2), the MOS device (M3) and the MOS device (M4); The other end of the diode (D3) is connected to the energy storage capacitor (C3), and the other end of the diode (D4) is connected to the energy storage capacitor (C4); The gate of the MOS device (M3) is connected to the input signal source (VL1) through a current limiting resistor (R3), its source is connected to the energy storage capacitor (C3), and its drain is connected to a diode (D5). The gate of the MOS device (M4) is connected to the input signal source (VL2) through a current limiting resistor (R4), the source is connected to a storage capacitor (C4), and the drain is connected to a diode (D6).

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