Crystal growth device with sacrificial structure

Abstract

An embodiment of the present invention provides a crystal growth device with a sacrificial structure, which relates to the technical field of silicon carbide crystal growth. The crystal growth device includes a crucible, a temperature regulating chamber, a heating device, and a sacrificial structure. The crucible includes a crucible body, a crucible cover, and a seed crystal. The crucible cover and the crucible body together form a crystal growth chamber. The seed crystal is arranged on the inner wall of the crucible cover and is located in the crystal growth chamber. The temperature regulating chamber cover is arranged outside the crucible cover and together with the crucible cover, forms a temperature regulating chamber. The heating device is arranged on the periphery of the crucible body and the temperature regulating chamber, and is used to heat the crucible body and the temperature regulating chamber. The sacrificial structure is arranged on the outer wall of the crucible cover and is located in the temperature regulating chamber. The sacrificial structure is used to sublimate when heated by the heating device to adjust the temperature gradient in the crystal growth chamber. The crystal growth device can improve the efficiency and quality of crystal growth.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon carbide crystal growth, and in particular to a crystal growth device with a sacrificial structure. Background Art

[0002] At present, the main methods for growing silicon carbide crystals include physical vapor transport method (PVT method) and liquid phase method. Among them, the PVT method is a relatively mature method suitable for industrial mass production. The so-called PVT method refers to a method in which a silicon carbide seed crystal is placed on the top of a crucible and silicon carbide powder as a raw material is placed at the bottom of the crucible. In a closed environment of high temperature and low pressure, the silicon carbide powder sublimates and is transported upward to the vicinity of the seed crystal under the action of a temperature gradient, reaching a supersaturated state and then recrystallizing.

[0003] For silicon carbide crystal growth equipment, the temperature gradient is a key factor affecting the crystal growth rate and quality. However, in related art, the temperature gradient regulation within silicon carbide crystal growth equipment is poor, resulting in low crystal growth efficiency and low-quality crystals. Summary of the Invention

[0004] The present invention aims to provide a crystal growth device with a sacrificial structure, which can improve the efficiency and quality of crystal growth.

[0005] The embodiments of the present invention can be implemented as follows:

[0006] In a first aspect, the present invention provides a crystal growth device with a sacrificial structure, comprising a crucible, a temperature regulating chamber, a heating device, and a sacrificial structure.

[0007] The crucible includes a crucible body, a crucible cover and a seed crystal. The crucible cover is detachably connected to the top of the crucible body. The crucible cover and the crucible body together form a crystal growth chamber for accommodating crystal growth raw materials. The seed crystal is arranged on the inner side wall of the crucible cover and is located in the crystal growth chamber.

[0008] The temperature regulating cavity cover is arranged outside the crucible cover, and together with the crucible cover, forms a temperature regulating cavity.

[0009] The heating device is arranged on the periphery of the crucible body and the temperature regulating cavity, and is used for heating the crucible body and the temperature regulating cavity.

[0010] The sacrificial structure is arranged on the outer side wall of the crucible cover and is located in the temperature regulating chamber. The sacrificial structure is used to sublime when heated by the heating device to adjust the temperature gradient in the crystal growth chamber.

[0011] Further, in an optional embodiment, the projection of the sacrificial structure on the inner sidewall surrounds the projection of the seed crystal on the inner sidewall.

[0012] Furthermore, in an optional embodiment, the sacrificial structure is a layered structure formed by pressing carbon powder and silicon carbide powder.

[0013] Further, in an optional embodiment, in the sacrificial structure, the silicon content of the portion where the projection on the inner side wall coincides with the projection on the inner side wall of the concave portion of the crystal to be improved grown on the seed crystal, is greater than the silicon content of the portion where the projection on the inner side wall coincides with the projection on the inner side wall of the convex portion of the crystal to be improved grown on the seed crystal.

[0014] Further, in an optional embodiment, the sacrificial structure includes a first sacrificial block and a second sacrificial block;

[0015] The second sacrificial block is arranged around the outer periphery of the first sacrificial block, and the projection of the seed crystal on the inner sidewall is located within the projection range of the second sacrificial block on the inner sidewall;

[0016] The first sacrificial block and the second sacrificial block are both made of at least one of carbon powder and silicon carbide powder, wherein the silicon content in the second sacrificial block is greater than the silicon content in the first sacrificial block.

[0017] Further, in an optional embodiment, the sacrificial structure includes a third sacrificial block, a fourth sacrificial block and a fifth sacrificial block;

[0018] The fourth sacrificial block is arranged around the outer periphery of the third sacrificial block, the fifth sacrificial block is arranged around the outer periphery of the fourth sacrificial block, and the projection of the seed crystal on the inner sidewall is located within the projection range of the fifth sacrificial block on the inner sidewall;

[0019] The third sacrificial block, the fourth sacrificial block and the fifth sacrificial block are all made of at least one of carbon powder and silicon carbide powder, wherein the silicon content in the third sacrificial block and the silicon content in the fifth sacrificial block are both less than the silicon content in the fourth sacrificial block.

[0020] Further, in an optional embodiment, the sacrificial structure includes a sixth sacrificial block, a seventh sacrificial block and an eighth sacrificial block;

[0021] The seventh sacrificial block is arranged around the outer periphery of the sixth sacrificial block, the eighth sacrificial block is arranged around the outer periphery of the seventh sacrificial block, and the projection of the seed crystal on the inner sidewall is located within the projection range of the eighth sacrificial block on the inner sidewall;

[0022] The sixth sacrificial block, the seventh sacrificial block and the eighth sacrificial block are all made of at least one of carbon powder and silicon carbide powder, wherein the silicon content in the sixth sacrificial block, the silicon content in the seventh sacrificial block and the silicon content in the eighth sacrificial block decrease in sequence.

[0023] Furthermore, in an optional embodiment, a receiving groove is provided on the outer side wall of the crucible cover, and the sacrificial structure is at least partially embedded in the receiving groove.

[0024] Furthermore, in an optional embodiment, the sacrificial structure is a layered structure formed by pressing carbon powder and silicon carbide powder, and the sacrificial structure is installed in the receiving groove after being pressed;

[0025] Alternatively, the sacrificial structure is a layered structure formed by pressing the carbon powder and silicon carbide powder filled in the receiving groove.

[0026] Further, in an optional embodiment, the temperature regulating chamber includes a first sleeve and a regulating chamber cover;

[0027] The first sleeve cover is arranged outside the crucible cover, the regulating chamber cover is detachably connected to the top of the first sleeve, and the first sleeve, the crucible cover and the regulating chamber cover together form the temperature regulating chamber.

[0028] Furthermore, in an optional embodiment, a second sleeve is further included;

[0029] The second sleeve is sleeved outside the crucible body, and the top of the second sleeve is connected to the bottom of the first sleeve.

[0030] Furthermore, in an optional embodiment, it further includes graphite soft felt;

[0031] The regulating chamber cover is provided with a plurality of air holes, and the graphite soft felt is laid on a side of the regulating chamber cover away from the temperature regulating chamber and covers the plurality of air holes.

[0032] The beneficial effects of the crystal growth device with a sacrificial structure provided by the embodiment of the present invention include:

[0033] The crystal growth device with a sacrificial structure provided by an embodiment of the present invention, when growing silicon carbide crystals, places the silicon carbide crystal growth material in a crystal growth chamber. The crucible body and temperature regulation chamber are heated by a heating device, causing the silicon carbide crystal growth material to sublime and, under the action of the temperature gradient, be transferred upward to the vicinity of the seed crystal for recrystallization. During the silicon carbide crystal growth process, the sacrificial structure is heated to a preset temperature by the heating device and sublimates. Since sublimation absorbs heat, heat conduction through the crucible lid achieves regulation of the temperature gradient within the crystal growth chamber. Furthermore, the temperature regulation of the seed crystal growth interface is more direct and significant, thereby maintaining the temperature of the seed crystal growth interface and improving the efficiency and quality of crystal growth.

[0034] Furthermore, the specific structure and component ratio of the sacrificial structure can be adjusted accordingly according to the convexity of the crystal to be improved, so as to maintain the temperature of the seed crystal growth interface and regulate the convexity of the crystal, thereby further improving the quality of the crystal. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without paying any creative work.

[0036] Figure 1 A schematic structural diagram of a crystal growth device with a sacrificial structure provided by an embodiment of the present invention;

[0037] Figure 2 for Figure 1 Schematic diagram of the structure of the crucible cover;

[0038] Figure 3 Schematic diagram of the growth structure of the "over-convex" crystal to be improved obtained after the first crystal growth using a crystal growth device without a sacrificial structure;

[0039] Figure 4 A schematic diagram of the partial structure of a crystal growth device with a sacrificial structure at a first sacrificial structure provided in an optional embodiment of the present invention;

[0040] Figure 5 A schematic diagram of the partial structure of a crystal growth apparatus with a sacrificial structure provided in an optional embodiment of the present invention at the first sacrificial structure after crystal growth; wherein the shape of the crystal micro-convexity and the shape of the sacrificial structure after sublimation are shown;

[0041] Figure 6Schematic diagram of the growth structure of a "W"-shaped crystal to be improved obtained after the first crystal growth using a crystal growth device without a sacrificial structure;

[0042] Figure 7 A schematic diagram of the partial structure of a crystal growth device with a sacrificial structure at a second sacrificial structure provided in an optional embodiment of the present invention;

[0043] Figure 8 A schematic diagram of the partial structure of a second sacrificial structure of a crystal growth apparatus with a sacrificial structure provided in an optional embodiment of the present invention after crystal growth; wherein the shape of the crystal micro-convexity and the shape of the sacrificial structure after sublimation are shown;

[0044] Figure 9 Schematic diagram of the growth structure of the "concave" crystal to be improved obtained after the first crystal growth using a crystal growth device without a sacrificial structure;

[0045] Figure 10 A schematic diagram of the partial structure of a crystal growth device with a sacrificial structure at a third sacrificial structure provided in an optional embodiment of the present invention;

[0046] Figure 11 A schematic diagram of the local structure of a crystal growth device with a sacrificial structure provided in an optional embodiment of the present invention at the third sacrificial structure after crystal growth; wherein, the shape of the crystal micro-convexity and the shape of the sacrificial structure after sublimation are shown.

[0047] icon:

[0048] 10-crystal growth device with sacrificial structure; 12-crystal growth raw material; 14-crystal; 16-crystal to be improved;

[0049] 100 - crucible; 110 - crucible body; 120 - crucible cover; 121 - inner wall; 122 - outer wall; 123 - receiving groove; 130 - seed crystal; 140 - crystal growth chamber;

[0050] 200 - temperature regulating chamber; 210 - temperature regulating chamber; 220 - first sleeve; 230 - regulating chamber cover; 231 - vent hole;

[0051] 300-heating device;

[0052] 400-sacrificial structure; 410-first sacrificial block; 420-second sacrificial block; 430-third sacrificial block; 440-fourth sacrificial block; 450-fifth sacrificial block; 460-sixth sacrificial block; 470-seventh sacrificial block; 480-eighth sacrificial block;

[0053] 500-second sleeve;

[0054] 600-Graphite soft felt. DETAILED DESCRIPTION

[0055] To make the objectives, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings herein can be arranged and designed in various different configurations.

[0056] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but rather merely represents selected embodiments of the present invention. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without creative effort shall fall within the scope of protection of the present invention.

[0057] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined or explained in subsequent drawings.

[0058] In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. appear, the orientation or position relationship indicated is based on the orientation or position relationship shown in the accompanying drawings, or is the orientation or position relationship in which the product of the invention is usually placed when in use. It is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be understood as a limitation on the present invention.

[0059] In addition, the terms "first", "second", etc., if used, are merely used to distinguish and describe, and should not be understood as indicating or implying relative importance.

[0060] It should be noted that, in the absence of conflict, the features in the embodiments of the present invention may be combined with each other.

[0061] See also Figure 1 An embodiment of the present invention provides a crystal growth device 10 with a sacrificial structure, which can be used for growing crystals 14, such as silicon carbide crystals 14. The crystal growth device 10 with a sacrificial structure can effectively improve the growth efficiency and quality of the crystals 14.

[0062] See also Figure 1 and Figure 2The crystal growth device 10 with a sacrificial structure includes a crucible 100, a temperature regulating chamber 200, a heating device 300, and a sacrificial structure 400. The crucible 100 includes a crucible body 110, a crucible lid 120, and a seed crystal 130. The crucible lid 120 is detachably connected to the top of the crucible body 110. The crucible lid 120 and the crucible body 110 together form a crystal growth chamber 140 for accommodating crystal growth raw materials 12. The seed crystal 130 is arranged on the inner side wall 121 of the crucible lid 120 and is located in the crystal growth chamber 140. The temperature regulating chamber 200 is covered outside the crucible lid 120 and together with the crucible lid 120, forms a temperature regulating chamber 210. The heating device 300 is arranged on the periphery of the crucible body 110 and the temperature regulating chamber 200 for heating the crucible body 110 and the temperature regulating chamber 200. The sacrificial structure 400 is disposed on the outer wall 122 of the crucible cover 120 and is located in the temperature regulating chamber 210 . The sacrificial structure 400 is configured to sublime when heated by the heating device 300 to regulate the temperature gradient in the crystal growth chamber 140 .

[0063] In the crystal growth apparatus 10 with a sacrificial structure provided in an embodiment of the present invention, when growing a silicon carbide crystal 14, a silicon carbide crystal growth material 12 is placed in a crystal growth chamber 140. The crucible body 110 and the temperature regulation chamber 200 are heated by a heating device 300, causing the crystal growth material 12 to sublime and, under the action of the temperature gradient, be transported upward to the vicinity of the seed crystal 130 for recrystallization. During the growth of crystal 14, the sacrificial structure 400 is heated to a preset temperature and sublimated by the heating device 300. Since sublimation absorbs heat, heat is conducted through the crucible lid 120, thereby regulating the temperature gradient within the crystal growth chamber 140. Furthermore, the temperature regulation of the growth interface of the seed crystal 130 is more direct and significant, thereby maintaining the temperature of the growth interface of the seed crystal 130 and improving the growth efficiency and quality of the crystal 14.

[0064] It should be noted that the crucible cover 120 can be optionally threadedly connected to the top of the crucible body 110 to facilitate disassembly and assembly. In this embodiment, the crucible cover 120 is made of graphite. The crucible cover 120 has an inner sidewall 121 and an outer sidewall 122 arranged in opposite directions. Optionally, the inner sidewall 121 and the outer sidewall 122 are arranged in parallel. The inner sidewall 121 is used to enclose a crystal growth chamber 140 together with the crucible body 110, and the seed crystal 130 is bonded to the inner sidewall 121 of the crucible cover 120. Of course, in some embodiments, a seed crystal holder can be provided on the inner sidewall 121 of the crucible cover 120, and the seed crystal 130 can be bonded to the seed crystal holder. In addition, the outer wall 122 of the crucible cover 120 and the temperature regulating chamber 200 together form a temperature regulating chamber 210, and the outer wall 122 is used to set a sacrificial structure 400 so that the sacrificial structure 400 can better perform heat conduction when sublimating and absorbing heat, thereby adjusting the temperature gradient in the crystal growth chamber 140.

[0065] In this embodiment, the sacrificial structure 400 is a layered structure formed by pressing carbon powder and silicon carbide powder. As an example, in each embodiment of the present invention, the sacrificial structure 400 is a layered structure as a whole.

[0066] The sacrificial structure 400 utilizes the principle that silicon has a lower sublimation temperature than carbon. By adjusting the carbon-silicon ratio, the sublimation rate at different locations can be controlled. This allows the sacrificial rate and shape of the sacrificial structure 400 to be adjusted to achieve a suitable radial temperature gradient and the growth interface temperature of the seed crystal 130. For example, components with higher silicon content can be used in sacrificial locations that require faster sublimation, while components with higher carbon content can be used in sacrificial locations that require slower sublimation. During the growth of the silicon carbide crystal 14, the sacrificial structure 400 sublimates and becomes thinner, while the sublimation absorbs heat, thereby maintaining the temperature of the growth interface and regulating the temperature gradient.

[0067] Furthermore, it should be noted that sacrificial structure 400 can be a circular layered structure. When configuring sacrificial structure 400, the carbon and silicon content can be adjusted radially as desired, thereby simultaneously adjusting the axial temperature gradient within crystal growth chamber 140 and the radial temperature gradient. This allows the sublimated crystal growth feedstock 12 to be more rapidly transferred to seed crystal 130 under the influence of both the axial and radial temperature gradients, thereby improving the efficiency and quality of crystal 14 growth.

[0068] In addition, the projection of the sacrificial structure 400 on the inner sidewall 121 surrounds the projection of the seed crystal 130 on the inner sidewall 121. That is, in an optional embodiment, the location of the sacrificial structure 400 on the outer sidewall 122 corresponds to the location of the seed crystal 130 on the inner sidewall 121. The axis of the sacrificial structure 400 roughly coincides with the axis of the seed crystal 130, and the diameter of the sacrificial structure 400 is greater than or equal to the diameter of the seed crystal 130. In this way, it is possible to effectively adjust the axial temperature gradient and the radial temperature gradient, so that the crystal growth raw material 12 is more quickly transferred to the seed crystal 130 after sublimation, further improving the efficiency and quality of the crystal 14 growth. In addition, the sacrificial structure 400 can regulate the temperature of the entire growth interface to improve the regulation effect.

[0069] In addition, since the sacrificial structure 400 is formed by pressing carbon powder and silicon carbide powder, the materials are easy to obtain and the cost is low. Waste materials generated during the growth of the silicon carbide crystal 14 can also be used, further reducing the cost.

[0070] Also, see Figures 3 to 11 In an optional embodiment, in the sacrificial structure 400, the silicon content of the portion where the projection on the inner side wall 121 coincides with the projection on the inner side wall 121 of the concave portion of the crystal 14 grown on the seed crystal 130 is greater than the silicon content of the portion where the projection on the inner side wall 121 coincides with the projection on the inner side wall 121 of the convex portion of the crystal 14 grown on the seed crystal 130.

[0071] It should be noted that after the first growth using a crystal growth device without a sacrificial structure, a crystal to be improved 16 is obtained. The crystal to be improved 16 may have different shapes. On the end surface of the crystal to be improved 16 away from the seed crystal 130, some parts are concave, and some parts are convex. The "concave" and "convex" referred to here refer to the surface shape of the end of the crystal to be improved 16 away from the seed crystal 130, among which the part closer to the seed crystal 130 can be considered "concave", and the part farther from the seed crystal 130 can be considered "convex". The concave portion of the crystal 16 to be improved can be considered as a portion with a relatively higher temperature during the growth of the crystal 16 to be improved, and its growth rate is slower. If the temperature is adjusted, the temperature of the concave portion of the crystal 16 to be improved will need to be lowered faster during the subsequent growth of the crystal 14. The convex portion of the crystal 16 to be improved can be considered as a portion with a relatively lower temperature during the growth of the crystal 16 to be improved, and its growth rate is faster. If the temperature is adjusted, the temperature of the convex portion of the crystal 14 to be improved will need to be higher than the temperature of the concave portion of the crystal 14 to be improved during the subsequent growth of the crystal 14. Therefore, in order to improve the temperature of the growth interface and the convexity of the crystal 16 to be improved during the growth of the above-mentioned crystal 16 to be improved, the crystal growth device 10 with a sacrificial structure provided in an embodiment of the present invention can be used. By adding a sacrificial structure 400 for adjustment, a new crystal 14 is grown on a new seed crystal 130, thereby improving the growth efficiency and quality of the crystal 14.

[0072] During the process of growing a crystal 14 using the crystal growth apparatus 10 with a sacrificial structure provided by an embodiment of the present invention, the shape of the sacrificial structure 400 can be configured accordingly based on the shape of the crystal 16 to be improved. For example, if the temperature of the concave portion of the crystal 16 to be improved needs to be lowered more quickly, the portion of the added sacrificial structure 400 corresponding to the concave portion of the crystal 16 to be improved can be configured with a carbon-to-silicon ratio that has a faster sublimation rate. In other words, the portion where the projection on the inner sidewall 121 overlaps with the projection on the inner sidewall 121 of the concave portion of the crystal 16 to be improved grown on the seed crystal 130 has a higher silicon content. This allows for a faster sublimation rate and faster sublimation to absorb heat, thereby lowering the temperature of the crystal 14 corresponding to the concave portion and increasing the growth rate of the crystal 14 corresponding to the concave portion. Similarly, the crystal 14 grown on the new seed crystal 130 corresponds to the convex part of the crystal 16 to be improved, which needs to have a higher temperature than the concave part. Then, the part corresponding to the convex part on the sacrificial structure 400 can be set with a carbon-silicon ratio with a slower sublimation rate. That is to say, the silicon content of the part where the projection on the inner wall 121 coincides with the projection on the inner wall 121 of the convex part of the crystal 16 to be improved grown on the seed crystal 130 is smaller. This can make the sublimation rate slower and the sublimation heat absorption slower, so that the temperature of the crystal 14 corresponding to the convex part is higher than the temperature of the concave part, thereby reducing the growth rate of the crystal 14 corresponding to the convex part.

[0073] Simply put, in a plane perpendicular to the inner sidewall 121, the end of the crystal 16 to be improved, which is away from the seed crystal 130, is concave. The corresponding portion of the sacrificial structure 400 needs to sublimate faster, and the corresponding portion of the sacrificial structure 400 has a higher silicon content. The end of the crystal 16 to be improved, which is away from the seed crystal 130, is convex. The corresponding portion of the sacrificial structure 400 needs to sublimate slower, and the corresponding portion of the sacrificial structure 400 has a lower silicon content. This arrangement effectively adjusts the radial temperature gradient and the growth interface temperature of the seed crystal 130, thereby maintaining the temperature of the growth interface and regulating the convexity of the crystal 14. After subsequent growth of the crystal 14, the end of the crystal 14 away from the seed crystal 130 is adjusted to be slightly convex or flatter, thereby improving the quality of the crystal 14.

[0074] In order to better adjust the radial temperature gradient and control the convexity of the crystal 14 , in an optional embodiment of the present invention, different shapes of the sacrificial structure 400 are designed to adapt to different shapes of the crystal 16 to be improved.

[0075] See also Figures 3 to 5In the first case, after the first growth of the crystal 16 to be improved, the crucible lid 120 is opened. It can be seen that the convex portion of the end surface of the crystal 16 to be improved, away from the seed crystal 130, is located in the middle area, the concave portion is located in the peripheral area, and the height difference between the convex portion and the concave portion is too large. This type of crystal 16 to be improved is considered to be "overconvex" and has a roughly U-shaped longitudinal cross-section. For this "overconvex" type of crystal 16 to be improved, the following corresponding sacrificial structure 400 can be set during the subsequent growth of the crystal 14:

[0076] The sacrificial structure 400 includes a first sacrificial block 410 and a second sacrificial block 420. Both the first sacrificial block 410 and the second sacrificial block 420 are disposed on the outer sidewall 122. The second sacrificial block 420 is disposed around the periphery of the first sacrificial block 410, such that the projection of the seed crystal 130 on the inner sidewall 121 is within the projection of the second sacrificial block 420 on the inner sidewall 121. Both the first sacrificial block 410 and the second sacrificial block 420 are made of at least one of carbon powder and silicon carbide powder. The silicon content of the second sacrificial block 420 is greater than that of the first sacrificial block 410.

[0077] It should be noted that the first sacrificial block 410 is generally circular, with its axis approximately coinciding with the axis of the seed crystal 130. The second sacrificial block 420 is annular and disposed around the periphery of the first sacrificial block 410, wherein the inner circumferential wall of the second sacrificial block 420 is aligned with the outer circumferential wall of the first sacrificial block 410. In addition, the projection of the seed crystal 130 on the inner sidewall 121 is located within the projection range of the second sacrificial block 420 on the inner sidewall 121, meaning that the projection of the seed crystal 130 on the inner sidewall 121 is located between the projection of the inner circumferential wall and the projection of the outer circumferential wall of the second sacrificial block 420 on the inner sidewall 121. In other words, the diameter of the seed crystal 130 is smaller than the outer diameter of the second sacrificial block 420 and larger than the inner diameter of the second sacrificial block 420. In addition, when viewed in a plane perpendicular to the inner sidewall 121, the first sacrificial block 410 corresponds to the convex portion of the central region of the crystal 16 to be improved, and the second sacrificial block 420 corresponds to the concave portion of the outer circumferential region of the crystal 16 to be improved. In this way, the first sacrificial block 410 and the second sacrificial block 420 can adjust the temperature of the entire growth interface and the convexity of the crystal 14, thereby improving the adjustment effect.

[0078] In addition, it should be noted that the first sacrificial block 410 and the second sacrificial block 420 are both made of at least one of carbon powder and silicon carbide powder, wherein the first sacrificial block 410 can be made of only carbon powder, or only silicon carbide powder, or both carbon powder and silicon carbide powder, and the second sacrificial block 420 is at least made of silicon carbide powder, which may contain carbon powder or not, as long as the silicon content in the second sacrificial block 420 is greater than the silicon content in the first sacrificial block 410.

[0079] As an example, in an optional embodiment, the mass proportion of silicon carbide powder in the first sacrificial block 410 is 0% to 30%. If the mass proportion of silicon carbide powder in the first sacrificial block 410 is 0%, it can be considered that the first sacrificial block 410 contains only carbon powder and no silicon carbide powder. If the mass proportion of silicon carbide powder in the first sacrificial block 410 is 30%, it can be considered that the mass proportion of silicon carbide powder in the first sacrificial block 410 is 30%, and the mass proportion of carbon powder in the first sacrificial block 410 is 70%. If the mass proportion of silicon carbide powder in the second sacrificial block 420 is greater than 30% and less than or equal to 70%, the second sacrificial block 420 contains both silicon carbide powder and carbon powder.

[0080] By setting the first sacrificial block 410 and the second sacrificial block 420, when the crystal 14 is subsequently grown, the silicon content of the first sacrificial block 410 is smaller and the sublimation speed is slower, which can correspondingly adjust the temperature of the convex part of the crystal 14 corresponding to the crystal 16 to be improved and the convexity of the crystal 14, so that the growth rate of the part of the crystal 14 corresponding to the convex part of the crystal 16 to be improved is relatively slowed down; similarly, the silicon content of the second sacrificial block 420 is larger and the sublimation speed is faster, which can correspondingly adjust the temperature of the concave part of the crystal 14 corresponding to the crystal 16 to be improved and the convexity of the crystal 14, so that the growth rate of the part of the crystal 14 corresponding to the concave part of the crystal 16 to be improved is relatively accelerated, so that the end of the grown crystal 14 away from the seed crystal 130 is adjusted to be slightly convex or flatter, thereby improving the quality of the crystal 14.

[0081] See also Figures 6 to 8 In the second scenario, after the growth of the crystal 16 to be improved, the crucible lid 120 is opened. It can be seen that the surface of the end of the crystal 16 to be improved, away from the seed crystal 130, has an inner convex portion, an annular inner concave portion, and an outer convex portion, from the inside out. This crystal 16 to be improved is considered to be "W"-shaped, with a longitudinal cross-section roughly in the shape of an inverted W. For this "W"-shaped crystal 16 to be improved, the following corresponding sacrificial structures 400 can be provided during the subsequent growth of the crystal 14:

[0082] The sacrificial structure 400 includes a third sacrificial block 430, a fourth sacrificial block 440, and a fifth sacrificial block 450. The third sacrificial block 430, the fourth sacrificial block 440, and the fifth sacrificial block 450 are all disposed on the outer sidewall 122. The fourth sacrificial block 440 is disposed around the periphery of the third sacrificial block 430, and the fifth sacrificial block 450 is disposed around the periphery of the fourth sacrificial block 440. The projection of the seed crystal 130 on the inner sidewall 121 is located within the projection of the fifth sacrificial block 450 on the inner sidewall 121. The third sacrificial block 430, the fourth sacrificial block 440, and the fifth sacrificial block 450 are all made of at least one of carbon powder and silicon carbide powder. The silicon content in the third sacrificial block 430 and the silicon content in the fifth sacrificial block 450 are both less than the silicon content in the fourth sacrificial block 440.

[0083] It should be noted that the third sacrificial block 430 is generally circular, with its axis approximately coinciding with the axis of the seed crystal 130. The fourth sacrificial block 440 and the fifth sacrificial block 450 are both annular, with their axis approximately coinciding with the axis of the third sacrificial block 430. The fourth sacrificial block 440 is disposed around the periphery of the third sacrificial block 430, with the inner circumferential wall of the fourth sacrificial block 440 aligned with the outer circumferential wall of the third sacrificial block 430. The fifth sacrificial block 450 is disposed around the periphery of the fourth sacrificial block 440, with the inner circumferential wall of the fifth sacrificial block 450 aligned with the outer circumferential wall of the fourth sacrificial block 440. The projection of the seed crystal 130 on the inner sidewall 121 is located within the projection of the fifth sacrificial block 450 on the inner sidewall 121. This means that the projection of the seed crystal 130 on the inner sidewall 121 is located between the projections of the inner and outer peripheral walls of the fifth sacrificial block 450 on the inner sidewall 121. In other words, the diameter of the seed crystal 130 is smaller than the outer diameter of the fifth sacrificial block 450 and larger than the inner diameter of the fifth sacrificial block 450. Furthermore, when viewed in a plane perpendicular to the inner sidewall 121, the third sacrificial block 430 corresponds to the convex portion of the inner periphery of the central region of the crystal 16 to be improved, the fourth sacrificial block 440 corresponds to the concave portion of the central region of the crystal 16 to be improved, and the fifth sacrificial block 450 corresponds to the convex portion of the outer periphery of the crystal 16 to be improved. In this way, the third, fourth, and fifth sacrificial blocks 430, 440, and 450 can adjust the temperature of the entire growth interface and the convexity of the crystal 14, thereby improving the adjustment effect.

[0084] In addition, it should be noted that the third sacrificial block 430, the fourth sacrificial block 440, and the fifth sacrificial block 450 are all made of at least one of carbon powder and silicon carbide powder. The third sacrificial block 430 and the fifth sacrificial block 450 can be made of only carbon powder, only silicon carbide powder, or both carbon powder and silicon carbide powder, while the fourth sacrificial block 440 is at least made of silicon carbide powder, which may or may not contain carbon powder, as long as the silicon content in the third sacrificial block 430 and the silicon content in the fifth sacrificial block 450 are both less than the silicon content in the fourth sacrificial block 440. In addition, the silicon content in the third sacrificial block 430 and the fifth sacrificial block 450 can be the same or different, and can be set accordingly according to the convex portion of the inner periphery and the degree of convexity of the convex portion of the outer periphery on the crystal 16 to be improved.

[0085] As an example, in an optional embodiment, the silicon content in the third sacrificial block 430 and the fifth sacrificial block 450 is the same. For example, the mass proportion of silicon carbide powder in the third sacrificial block 430 and the fifth sacrificial block 450 is 0% to 30%. If the mass proportion of silicon carbide powder in the third sacrificial block 430 and the fifth sacrificial block 450 is 0%, it can be considered that the third sacrificial block 430 and the fifth sacrificial block 450 only contain carbon powder. If the mass proportion of silicon carbide powder in the third sacrificial block 430 and the fifth sacrificial block 450 is 30%, it can be considered that the mass proportion of silicon carbide powder in the third sacrificial block 430 and the fifth sacrificial block 450 is 30%, and the mass proportion of carbon powder in the third sacrificial block 430 and the fifth sacrificial block 450 is 70%. If the mass proportion of silicon carbide powder in the fourth sacrificial block 440 is greater than 30% and less than or equal to 70%, the fourth sacrificial block 440 contains both silicon carbide powder and carbon powder.

[0086] By setting the third sacrificial block 430, the fourth sacrificial block 440 and the fifth sacrificial block 450, when the crystal 14 is subsequently grown, the third sacrificial block 430 and the fifth sacrificial block 450 have a smaller silicon content and a slower sublimation speed than the fourth sacrificial block 440, and can correspondingly adjust the temperature of the convex parts of the inner and outer peripheries of the crystal 14 corresponding to the crystal 16 to be improved and the convexity of the crystal 14, so that the growth rate of the crystal 14 at the convex part of the crystal 14 corresponding to the crystal 16 to be improved is relatively slowed down; similarly, the fourth sacrificial block 440 has a larger silicon content and a faster sublimation speed, and can correspondingly adjust the temperature of the concave part of the crystal 14 corresponding to the crystal 16 to be improved and the convexity of the crystal 14, so that the growth rate of the part of the crystal 14 corresponding to the concave part of the crystal 16 to be improved is relatively accelerated, so that the end of the grown crystal 14 away from the seed crystal 130 is adjusted to be slightly convex or flatter, thereby improving the quality of the crystal 14.

[0087] See also Figures 9 to 11In the third scenario, after the crystal 16 to be improved is grown, the crucible lid 120 is opened. It can be seen that the surface of the end of the crystal 16 to be improved, away from the seed crystal 130, has a concave portion in the center, a concave portion in the middle, and a convex portion on the periphery, from the inside out. The concave portion in the center is more concave than the concave portion in the middle. This type of crystal 16 to be improved is considered "concave," with a longitudinal cross-section roughly in the shape of an inverted U. For this type of "concave" crystal 16 to be improved, the following corresponding sacrificial structures 400 can be provided during subsequent crystal 14 growth:

[0088] The sacrificial structure 400 includes a sixth sacrificial block 460, a seventh sacrificial block 470, and an eighth sacrificial block 480. The sixth, seventh, and eighth sacrificial blocks 460, 470, and 480 are all disposed on the outer sidewall 122. The seventh sacrificial block 470 is disposed around the periphery of the sixth sacrificial block 460, and the eighth sacrificial block 480 is disposed around the periphery of the seventh sacrificial block 470. The projection of the seed crystal 130 on the inner sidewall 121 is located within the projection of the eighth sacrificial block 480 on the inner sidewall 121. The sixth, seventh, and eighth sacrificial blocks 460, 470, and 480 are all made of at least one of carbon powder and silicon carbide powder. The silicon content in the sixth, seventh, and eighth sacrificial blocks 460, 470, and 480 decreases in sequence.

[0089] It should be noted that the sixth sacrificial block 460 is generally circular, with its axis approximately coinciding with the axis of the seed crystal 130. The seventh sacrificial block 470 and the eighth sacrificial block 480 are both annular. The seventh sacrificial block 470 is disposed around the periphery of the sixth sacrificial block 460, with its inner circumferential wall aligned with the outer circumferential wall of the sixth sacrificial block 460. The eighth sacrificial block 480 is disposed around the periphery of the seventh sacrificial block 470, with its inner circumferential wall aligned with the outer circumferential wall of the seventh sacrificial block 480. The projection of the seed crystal 130 on the inner sidewall 121 is located within the projection of the eighth sacrificial block 480 on the inner sidewall 121, meaning that the projection of the seed crystal 130 on the inner sidewall 121 is located between the projection of the inner circumferential wall and the projection of the outer circumferential wall of the eighth sacrificial block 480 on the inner sidewall 121. In other words, the diameter of the seed crystal 130 is smaller than the outer diameter of the eighth sacrificial block 480 and larger than the inner diameter of the eighth sacrificial block 480. Furthermore, viewed from a plane perpendicular to inner sidewall 121, sixth sacrificial block 460 corresponds to the concave portion of the central region of crystal 16 to be improved, seventh sacrificial block 470 corresponds to the convex portion of the inner periphery of crystal 16 to be improved, and eighth sacrificial block 480 corresponds to the convex portion of the outer periphery of crystal 16 to be improved. Thus, sixth sacrificial block 460, seventh sacrificial block 470, and eighth sacrificial block 480 can adjust the temperature of the entire growth interface and the convexity of crystal 14, thereby improving the adjustment effect.

[0090] In addition, it should be noted that the sixth sacrificial block 460, the seventh sacrificial block 470, and the eighth sacrificial block 480 are all made of at least one of carbon powder and silicon carbide powder. The sixth sacrificial block 460 can be made solely of silicon carbide powder, or contain both. The seventh sacrificial block 470 is made of both carbon powder and silicon carbide powder. The eighth sacrificial block 480 can be made solely of carbon powder, solely of silicon carbide powder, or contain both. It is sufficient to ensure that the silicon content in the sixth sacrificial block 460, the silicon content in the seventh sacrificial block 470, and the silicon content in the eighth sacrificial block 480 decreases in sequence.

[0091] As an example, in an optional embodiment, the mass proportion of silicon carbide powder in the sixth sacrificial block 460 is 70% to 100%. If the mass proportion of silicon carbide powder in the sixth sacrificial block 460 is 70%, it can be considered that the sixth sacrificial block 460 contains 70% silicon carbide powder and 30% carbon powder. If the mass proportion of silicon carbide powder in the sixth sacrificial block 460 is 100%, it can be considered that the sixth sacrificial block 460 contains only silicon carbide powder and no carbon powder. The mass proportion of silicon carbide powder and carbon powder in the seventh sacrificial block 470 ranges from greater than 30% to less than or equal to 70%. The mass proportion of silicon carbide powder in the eighth sacrificial block 480 is 0% to 30%. If the mass proportion of silicon carbide powder in the eighth sacrificial block 480 is 0%, it can be considered that the eighth sacrificial block 480 contains only carbon powder and no silicon carbide powder. If the mass proportion of the silicon carbide powder in the eighth sacrificial block 480 is 30%, it can be considered that the mass proportion of the silicon carbide powder in the eighth sacrificial block 480 is 30%, and the mass proportion of the carbon powder is 70%.

[0092] By providing the sixth, seventh, and eighth sacrificial blocks 460, 470, and 480, the silicon content of the sixth, seventh, and eighth sacrificial blocks 460, 470, and 480 gradually decreases during subsequent growth of the crystal 14. The sixth sacrificial block 460 has a higher silicon content and a faster sublimation rate, thereby correspondingly adjusting the temperature and convexity of the concave portion of the central region of the crystal 14 corresponding to the crystal 16 to be improved, thereby accelerating the growth rate of the portion of the crystal 14 corresponding to the concave portion of the central region of the crystal 16 to be improved. Similarly, the seventh sacrificial block 470 has an intermediate silicon content, and while its sublimation rate is not as fast as that of the sixth sacrificial block 460, it is still faster than that of the eighth sacrificial block 480. This allows for corresponding adjustment of the temperature and convexity of the portion of the crystal 14 corresponding to the concave portion of the central region of the crystal 16 to be improved, thereby accelerating the growth rate of the portion of the crystal 14 corresponding to the concave portion of the central region of the crystal 16 to be improved. Similarly, the eighth sacrificial block 480 has a lower silicon content and a slower sublimation rate, which can adjust the temperature and convexity of the convex portion of the crystal 14 corresponding to the periphery of the crystal 16 to be improved, thereby slowing the growth rate of the portion of the crystal 14 corresponding to the convex portion of the periphery of the crystal 16 to be improved. In this way, the end of the grown crystal 14 away from the seed crystal 130 can be adjusted to be slightly convex or more flat, thereby improving the quality of the crystal 14.

[0093] Please continue reading Figure 1 and Figure 2 In addition, in this embodiment, a receiving groove 123 is provided on the outer wall 122 of the crucible cover 120, and the sacrificial structure 400 is at least partially embedded in the receiving groove 123. This facilitates the placement of the sacrificial structure 400 on the outer wall 122 of the crucible cover 120. Furthermore, the sacrificial structure 400 facilitates heat conduction from the crucible cover 120 during sublimation, thereby regulating the temperature gradient within the crystal growth chamber 140.

[0094] Furthermore, since the sacrificial structure 400 is a layered structure formed by pressing carbon powder and silicon carbide powder, in this embodiment, the sacrificial structure 400 can be disposed in the receiving groove 123 in the following two ways:

[0095] The first method is to install the sacrificial structure 400 in the receiving groove 123 after being pressed. In other words, the carbon powder and silicon carbide powder are first arranged according to the predetermined shape and ratio of the sacrificial structure 400, and then pressed into a block to form a layered structure. The pressed sacrificial structure 400 is then installed in the receiving groove 123, for example, by being pressed into the receiving groove 123.

[0096] Alternatively, a second method can be used: the sacrificial structure 400 is a layered structure formed by pressing carbon powder and silicon carbide powder filled in the receiving groove 123. That is, the carbon powder and silicon carbide powder are first filled into the receiving groove 123 according to the predetermined shape of the sacrificial structure 400, and then pressed into a block within the receiving groove 123 by pressing, thereby forming the sacrificial structure 400 filled in the receiving groove 123.

[0097] The sacrificial structure 400 can be obtained by pressing in both of the above two methods, and the pressing is convenient and easy to operate. The three different sacrificial structures 400 in the above embodiments can be obtained by adjusting the component ratio and the molding shape of each part of the sacrificial structure 400 from the inside to the outside in the radial direction as needed.

[0098] To better form the temperature regulating chamber 210, in this embodiment, the temperature regulating chamber 200 includes a first sleeve 220 and a regulating chamber cover 230. The first sleeve 220 is disposed over the crucible cover 120, and the regulating chamber cover 230 is detachably connected to the top of the first sleeve 220. Together, the first sleeve 220, the crucible cover 120, and the regulating chamber cover 230 form the temperature regulating chamber 210.

[0099] It should be noted that both the first sleeve 220 and the regulating chamber cover 230 are made of graphite. The regulating chamber cover 230 may optionally be threadedly connected to the first sleeve 220. Furthermore, in some optional embodiments of the present invention, the first sleeve 220 may be mounted on the outer wall 122 of the crucible cover 120, as long as the first sleeve 220, the crucible cover 120, and the regulating chamber cover 230 collectively enclose the temperature regulating chamber 210.

[0100] In this embodiment, to facilitate the installation of the first sleeve 220, the crystal growth apparatus 10 with a sacrificial structure further includes a second sleeve 500. The second sleeve 500 is sleeved onto the crucible body 110, with the top of the second sleeve 500 connected to the bottom of the first sleeve 220. This facilitates installation by simply inserting the second sleeve 500 onto the crucible body 110 and then installing the adjustment chamber cover 230 on top of the first sleeve 220. The first sleeve 220, crucible cover 120, and adjustment chamber cover 230 together form the temperature adjustment chamber 210.

[0101] In this embodiment, the first sleeve 220 and the second sleeve 500 are integrally formed. Thus, when the second sleeve 500 is sleeved onto the crucible body 110, the first sleeve 220 protrudes from the outer sidewall 122 of the crucible cover 120, thereby more conveniently forming the temperature regulating chamber 210 together with the crucible cover 120 and the regulating chamber cover 230.

[0102] Of course, in other embodiments of the present invention, the first sleeve 220 and the second sleeve 500 may not be integrally formed, and may be connected together by threaded connection or other connection methods.

[0103] In addition, in this embodiment, the crystal growth device 10 with a sacrificial structure further includes a graphite felt 600. The regulating chamber cover 230 is provided with a plurality of vent holes 231. The graphite felt 600 is laid on the side of the regulating chamber cover 230 away from the temperature regulating chamber 210 and covers the plurality of vent holes 231.

[0104] It should be noted that in this embodiment, the graphite felt 600 has a certain porosity, a certain number of pores, and a certain thickness. The porosity, number of pores, and thickness of the graphite felt 600 are set accordingly based on the size of the sacrificial structure 400 and its carbon and silicon content. By providing the graphite felt 600, the gas generated by the sublimation of the sacrificial structure 400 can pass through the air vents 231, allowing the graphite felt 600 to collect and filter the crystals produced by the sublimation of the sacrificial structure 400, thereby reducing contamination of the crystal growth furnace. Furthermore, the first sleeve 220, the second sleeve 500, and the adjustment chamber cover 230 collectively provide excellent support for the graphite felt 600.

[0105] To sum up, in the crystal growth device 10 with a sacrificial structure provided by an embodiment of the present invention, during the growth process of the silicon carbide crystal 14, the sacrificial structure 400 is heated to a preset temperature and sublimated by the action of the heating device 300. Since sublimation absorbs heat, heat is conducted through the crucible cover 120, thereby realizing the adjustment of the temperature gradient in the crystal growth chamber 140, and the temperature adjustment of the growth interface of the seed crystal 130 is more direct and significant, thereby maintaining the temperature of the growth interface of the seed crystal 130, and improving the growth efficiency and quality of the crystal 14.

[0106] The above description is merely a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present invention should be included in the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. A crystal growth device with a sacrificial structure, characterized in that: include: A crucible (100), the crucible (100) comprising a crucible body (110), a crucible cover (120) and a seed crystal (130), the crucible cover (120) being detachably connected to the top of the crucible body (110), the crucible cover (120) and the crucible body (110) jointly forming a crystal growth chamber (140) for accommodating crystal growth raw materials (12), the seed crystal (130) being arranged on an inner side wall (121) of the crucible cover (120) and located within the crystal growth chamber (140); a temperature regulating cavity (200), the temperature regulating cavity (200) being arranged outside the crucible cover (120) and forming a temperature regulating cavity (210) together with the crucible cover (120); a heating device (300), the heating device (300) being arranged on the periphery of the crucible body (110) and the temperature regulating cavity (200), and being used for heating the crucible body (110) and the temperature regulating cavity (200); and A sacrificial structure (400) is provided on the outer wall (122) of the crucible cover (120) and is located in the temperature regulating chamber (210). The sacrificial structure (400) is used to sublime when heated by the heating device (300) to adjust the temperature gradient in the crystal growth chamber (140).

2. The crystal growth device with a sacrificial structure according to claim 1, wherein: The projection of the sacrificial structure (400) on the inner sidewall (121) surrounds the projection of the seed crystal (130) on the inner sidewall (121).

3. The crystal growth device with a sacrificial structure according to claim 1 or 2, characterized in that: The sacrificial structure (400) is a layered structure formed by pressing carbon powder and silicon carbide powder.

4. The crystal growth device with a sacrificial structure according to claim 3, wherein: In the sacrificial structure (400), the silicon content of a portion where the projection on the inner side wall (121) coincides with the projection on the inner side wall (121) of the concave portion of the crystal to be improved (16) grown on the seed crystal (130) is greater than the silicon content of a portion where the projection on the inner side wall (121) coincides with the projection on the inner side wall (121) of the convex portion of the crystal to be improved (16) grown on the seed crystal (130).

5. The crystal growth device with a sacrificial structure according to claim 4, characterized in that: The sacrificial structure (400) includes a first sacrificial block (410) and a second sacrificial block (420); The second sacrificial block (420) is arranged around the outer periphery of the first sacrificial block (410), and the projection of the seed crystal (130) on the inner sidewall (121) is located within the projection range of the second sacrificial block (420) on the inner sidewall (121); The first sacrificial block (410) and the second sacrificial block (420) are both made of at least one of carbon powder and silicon carbide powder, wherein the silicon content in the second sacrificial block (420) is greater than the silicon content in the first sacrificial block (410).

6. The crystal growth device with a sacrificial structure according to claim 4, wherein: The sacrificial structure (400) includes a third sacrificial block (430), a fourth sacrificial block (440) and a fifth sacrificial block (450); The fourth sacrificial block (440) is arranged around the outer periphery of the third sacrificial block (430), the fifth sacrificial block (450) is arranged around the outer periphery of the fourth sacrificial block (440), and the projection of the seed crystal (130) on the inner side wall (121) is located within the projection range of the fifth sacrificial block (450) on the inner side wall (121); The third sacrificial block (430), the fourth sacrificial block (440) and the fifth sacrificial block (450) are all made of at least one of carbon powder and silicon carbide powder, wherein the silicon content in the third sacrificial block (430) and the silicon content in the fifth sacrificial block (450) are both less than the silicon content in the fourth sacrificial block (440).

7. The crystal growth device with a sacrificial structure according to claim 4, characterized in that: The sacrificial structure (400) includes a sixth sacrificial block (460), a seventh sacrificial block (470) and an eighth sacrificial block (480); The seventh sacrificial block (470) is arranged around the outer periphery of the sixth sacrificial block (460), the eighth sacrificial block (480) is arranged around the outer periphery of the seventh sacrificial block (470), and the projection of the seed crystal (130) on the inner side wall (121) is located within the projection range of the eighth sacrificial block (480) on the inner side wall (121); The sixth sacrificial block (460), the seventh sacrificial block (470) and the eighth sacrificial block (480) are all made of at least one of carbon powder and silicon carbide powder, wherein the silicon content in the sixth sacrificial block (460), the silicon content in the seventh sacrificial block (470) and the silicon content in the eighth sacrificial block (480) decrease in sequence.

8. The crystal growth device with a sacrificial structure according to claim 1, wherein: An accommodating groove (123) is provided on the outer side wall (122) of the crucible cover (120), and the sacrificial structure (400) is at least partially embedded in the accommodating groove (123).

9. The crystal growth device with a sacrificial structure according to claim 8, wherein: The sacrificial structure (400) is a layered structure formed by pressing carbon powder and silicon carbide powder, and the sacrificial structure (400) is installed in the accommodating groove (123) after being pressed. Alternatively, the sacrificial structure (400) is a layered structure formed by pressing the carbon powder and silicon carbide powder filled in the receiving groove (123).

10. The crystal growth device with a sacrificial structure according to claim 1, wherein: The temperature regulating cavity (200) comprises a first sleeve (220) and a regulating cavity cover (230); The first sleeve (220) is covered outside the crucible cover (120), the regulating chamber cover (230) is detachably connected to the top of the first sleeve (220), and the first sleeve (220), the crucible cover (120) and the regulating chamber cover (230) together form the temperature regulating chamber (210).

11. The crystal growth device with a sacrificial structure according to claim 10, wherein: Also includes a second sleeve (500); The second sleeve (500) is sleeved outside the crucible body (110), and the top of the second sleeve (500) is connected to the bottom of the first sleeve (220).

12. The crystal growth device with a sacrificial structure according to claim 10, wherein: Also included is graphite soft felt (600); The regulating chamber cover (230) is provided with a plurality of air holes (231), and the graphite soft felt (600) is laid on a side of the regulating chamber cover (230) away from the temperature regulating chamber (210) and covers the plurality of air holes (231).

Images