Method and apparatus for manufacturing package structures

Abstract

A method and apparatus for manufacturing a package structure are disclosed. The apparatus includes a first space, a joint removal apparatus, a second space, and a fluid supply device. The debonding apparatus is disposed in the first space and is configured to perform a debonding process. The second space is disposed around the first space. The fluid supply device is configured such that a first humidity of air in the first space is greater than a second humidity of air in the second space.

Description

Technical Field

[0001] The present disclosure relates to an apparatus and a manufacturing method, and to a method and an apparatus for manufacturing a package structure. Background Art

[0002] Semiconductor processing technology may include at least one bonding process and at least one de-bonding process. However, when the substrate is de-bonded (or peeled off) or separated from the tape layer, static electricity may be generated during the de-bonding process. If a plurality of semiconductor devices or semiconductor dies are placed on the substrate, such static electricity may damage the semiconductor devices or semiconductor dies. Therefore, the yield of the semiconductor substrate may be reduced. Summary of the invention

[0003] In some embodiments, a method for manufacturing a packaging structure includes: providing an assembly structure, the assembly structure including a substrate structure and a tape, wherein the substrate structure has a first surface and a second surface opposite to the first surface and bonded to the tape; removably bonding the second surface of the substrate structure to the tape; and before removably bonding the second surface of the substrate structure to the tape, neutralizing a plurality of charges adjacent to the first surface of the substrate structure.

[0004] In some embodiments, a method for manufacturing a packaging structure includes: providing an assembly structure, the assembly structure including a substrate structure bonded to a tape and a die disposed on the substrate structure; providing a plurality of ion carriers onto the substrate structure; and debonding the substrate structure from the tape after providing the plurality of ion carriers onto the substrate structure.

[0005] In some embodiments, an apparatus for manufacturing a package structure includes a first space, a removal bonding device, a second space, and a fluid supply device. The removal bonding device is disposed in the first space and is configured to perform a removal bonding process. The second space is disposed around the first space. The fluid supply device is configured to make the first humidity of the air in the first space greater than the second humidity of the air in the second space. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Aspects of some embodiments of the present disclosure will be best understood from the following detailed description when read in conjunction with the accompanying drawings.It should be noted that the various structures may not be drawn to scale and that the dimensions of the various structures may be arbitrarily increased or reduced for clarity of discussion.

[0007] Figure 1 A cross-sectional view of a device according to some embodiments of the present disclosure is shown.

[0008] Figure 2 Show Figure 1A partial enlarged view of area "A".

[0009] Figure 3 Show Figure 1 A top view of the removal bonding device.

[0010] Figure 4 Show Figure 1 A top view of a removal bonding device, a fluid supply device, and an air supply device.

[0011] Figure 5 Show Figure 3 Front view of the removal engagement device.

[0012] Figure 6 A cross-sectional view of a device according to some embodiments of the present disclosure is shown.

[0013] Figure 7 A cross-sectional view of a device according to some embodiments of the present disclosure is shown.

[0014] Figure 8 Show Figure 7 A partial enlarged view of area "B".

[0015] Fig. 9 A cross-sectional view of a device according to some embodiments of the present disclosure is shown.

[0016] Fig.10 Show Fig. 9 A partial magnified view of area "C".

[0017] Fig.11 A top view of a removal engagement apparatus is shown according to some embodiments of the present disclosure.

[0018] Fig.12 Show Fig.11 Front view of the removal engagement device.

[0019] Fig.13 Show Fig.11 Left side view of the removal bonding device.

[0020] Fig.14 A top view of a removal engagement apparatus is shown according to some embodiments of the present disclosure.

[0021] Fig.15 Show Fig.14 Front view of the removal engagement device.

[0022] Fig.16 Show Fig.14 Left side view of the removal bonding device.

[0023] Fig.17 Show Fig.14Right side view of the removal bonding device.

[0024] Fig.18 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0025] Fig.19 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0026] Fig. 20 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0027] Fig.21 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0028] Fig. 22 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0029] Fig.23 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0030] Fig.24 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0031] Fig.25 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0032] Fig.26 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0033] Fig. 27 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0034] Fig.28 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0035] Fig.29 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0036] Fig.30 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0037] Fig.31 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0038] Fig.32 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0039] Fig.33 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0040] Fig.34 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0041] Fig.35 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0042] Fig.36 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0043] Fig.37 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0044] Fig.38 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0045] Fig.39 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0046] Fig.40 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0047] Fig.41 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0048] Fig.42 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0049] Fig.43 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0050] Fig.44One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0051] Fig.45 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0052] Fig.46 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0053] Fig.47 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0054] Fig.48 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown.

[0055] Fig.49 One or more stages of an example of a method for manufacturing a package structure according to some embodiments of the present disclosure are shown. DETAILED DESCRIPTION

[0056] Common reference numerals are used throughout the drawings and detailed description to indicate the same or similar components. Embodiments of the present disclosure will be easily understood from the following detailed description taken in conjunction with the accompanying drawings.

[0057] The following disclosure provides a plurality of different embodiments or examples for implementing the different features of the provided subject matter. Specific examples of components and arrangements are described below to explain certain aspects of the present disclosure. Of course, these are only examples and are not intended to be restrictive. For example, in the following description, the formation of a first feature on or on a second feature may include an embodiment in which the first feature and the second feature are formed or arranged in direct contact, and may also include an embodiment in which an additional feature may be formed or arranged between the first feature and the second feature so that the first feature and the second feature may not be in direct contact. In addition, the present disclosure may repeat reference numerals and / or letters in various examples. This repetition is for the purpose of simplification and clarity, and does not itself specify the relationship between the various embodiments and / or configurations discussed.

[0058] Figure 1 A cross-sectional view of a device 1 according to some embodiments of the present disclosure is shown. Figure 2 Show Figure 1 A partial enlarged view of area "A". Figure 3 Show Figure 1 FIG. 1 is a top view of a de-bonding apparatus 10 . Figure 4 Show Figure 1FIG. 1 is a top view of the removal bonding device 10 , the fluid supply device 24 and the air supply device 26 . Figure 5 Show Figure 3 1 is a front view of a debonding device 10. Device 1 may be a device that can perform or implement a debonding (or stripping) process of a semiconductor manufacturing process. In some embodiments, device 1 may be a device for manufacturing a package structure 7 ( Fig.39 ) device 1.

[0059] The apparatus 1 may include a machine table 30, a first space 31, a removal bonding apparatus 10, a second space 32, a fluid supply device 24, at least one static electricity sensor 19, an air supply device 26, and a housing 28. The machine table 30 may be a support table, and may have a first surface (e.g., an upper surface) 301. The first surface (e.g., the upper surface) 301 may include a first portion 3011 and a second portion 3012 around the first portion 3011. The second portion 3012 of the first surface (e.g., the upper surface) 301 may include a first area 3012a and a second area 3012b. The first portion 3011 of the first surface (e.g., the upper surface) 301 may be disposed between the first area 3012a and the second area 3012b.

[0060] The first space 31 may be located above or adjacent to a first portion 3011 of a first surface (e.g., upper surface) 301 of the machine stage 30. That is, the first space 31 may correspond to the first portion 3011 of the first surface (e.g., upper surface) 301 of the machine stage 30. In addition, the debonding device 10 may be disposed in the first space 31 and configured to perform a debonding (or peeling) process. That is, the position of the debonding device 10 may correspond to the first space 31. Therefore, the debonding device 10 may be disposed above or adjacent to a first portion 3011 of a first surface (e.g., upper surface) 301 of the machine stage 30. The debonding device 10 may be configured to perform or implement a debonding process. In addition, the second space 32 may be disposed around the first space 31. The second space 32 may be disposed above or adjacent to a second portion 3012 of a first surface (e.g., upper surface) 301 of the machine stage 30. That is, the second space 32 may correspond to the second portion 3012 of the first surface (eg, upper surface) 301 of the machine stage 30 .

[0061] In some embodiments, the second space 32 may be part of an indoor environment such as a clean room. Therefore, the device 1 may be placed in a clean room. The second space 32 may include a loading area 32a and an unloading area 32b. The first space 31 may be disposed between the loading area 32a and the unloading area 32b. The loading area 32a may be disposed on or adjacent to the first area 3012a of the second portion 3012 of the first surface (e.g., upper surface) 301 of the machine table 30. That is, the loading area 32a may correspond to the first area 3012a of the second portion 3012 of the first surface (e.g., upper surface) 301 of the machine table 30. The unloading area 32b may be disposed on or adjacent to the second area 3012b of the second portion 3012 of the first surface (e.g., upper surface) 301 of the machine table 30. That is, the unloading area 32b may correspond to the second area 3012b of the second portion 3012 of the first surface (e.g., upper surface) 301 of the machine stage 30. In some embodiments, the first humidity is defined as the humidity of the air in the first space 31, and the second humidity is defined as the humidity of the air in the second space 32 (including the loading area 32a and the unloading area 32b). During the debonding process, the first humidity may be greater than the second humidity.

[0062] The removal bonding apparatus 10 may include a chuck 12 and a plurality of ejection pins 13 (or ejection pins or ejector pins) disposed in the chuck 12. In some embodiments, the chuck 12 may include a metal material. In some embodiments, the chuck 12 may have a first surface (e.g., an upper surface) 121, and may define a receiving cavity 123 recessed from the first surface (e.g., an upper surface) 121. The receiving cavity 123 may have a lower surface 124. The receiving cavity 123 of the chuck 12 may be configured to receive and hold the workpiece 11.

[0063] like Figures 3 to 5, the chuck 12 may define at least one groove (e.g., a first groove 125 and a second groove 127) and at least one drain hole (e.g., a first drain hole 126 and a second drain hole 128). The at least one groove (e.g., the first groove 125 and the second groove 127) may be recessed from a first surface (e.g., an upper surface) 121 of the chuck 12. The at least one drain hole (e.g., the first drain hole 126 and the second drain hole 128) may be in communication with the bottommost portion of the groove (e.g., the first groove 125 and the second groove 127). For example, the first groove 125 may be disposed adjacent to a long side 1211 of the chuck 12. The first groove 125 may be recessed from a first surface (e.g., an upper surface) 121 of the chuck 12, and the first drain hole 126 may be in fluid communication with the bottommost portion of the first groove 125. Therefore, the first drain hole 126 may be spaced apart from the first surface (e.g., an upper surface) 121 of the chuck 12. The first groove 125 may be disposed between the first drain hole 126 and the first surface (e.g., upper surface) 121 of the chuck 12. The first groove 125 may have an inclined lower surface 1253 connected to the first drain hole 126. The inclined lower surface 1253 may not be parallel to the first surface (e.g., upper surface) 121 of the chuck 12 so as to guide the liquid in the first groove 125 to flow to the first drain hole 126. Similarly, the second groove 127 may be disposed adjacent to the short side 1212 of the chuck 12. The second groove 127 may be recessed from the first surface (e.g., upper surface) 121 of the chuck 12, and the second drain hole 128 may be in fluid communication with the bottommost portion of the second groove 127. Therefore, the second drain hole 128 may be spaced apart from the first surface (e.g., upper surface) 121 of the chuck 12. The second groove 127 may be disposed between the second drain hole 128 and the first surface (e.g., upper surface) 121 of the chuck 12. The second groove 127 may have an inclined lower surface 1273 connected to the second drain hole 128. The inclined lower surface 1273 may not be parallel to the first surface (eg, upper surface) 121 of the chuck 12 so as to guide the liquid in the second groove 127 to flow to the second drain hole 128.

[0064] like Figure 1, the workpiece 11 may be an assembly structure 11, which includes a substrate structure 18, at least one die 20 (e.g., a semiconductor die 20 or an electronic die 20 or a MEMS die 20), a tape 16, and a carrier plate 14. The tape 16 may also be referred to as a "second element". The die 20 may be disposed on the substrate structure 18, or may be disposed adjacent to a first surface 181 of the substrate structure 18. The combination of the die 20 and the substrate structure 18 may be a combination structure 2 (or a strip structure 2). The combination structure 2 may include a substrate structure 18 and a plurality of semiconductor dies 20. The substrate structure 18 may also be referred to as a "first element" or a "wiring structure". The carrier plate 14 may include a metal material, such as stainless steel or an aluminum alloy. The carrier plate 14 may have a first surface (e.g., an upper surface) 141 and a second surface (e.g., a lower surface) 142 opposite to the first surface 141. The carrier plate 14 may define a plurality of through holes 143 extending through the carrier plate 14. The carrier plate 14 may be used to provide rigidity to the entire workpiece 11 or the assembly structure 11. In some embodiments, the second surface 142 of the carrier plate 14 may be adsorbed by a plurality of suction holes or vacuum holes recessed from the lower surface 124 of the receiving cavity 123 of the chuck 12. The thickness of the carrier plate 14 may be greater than the thickness of the tape 16 and the thickness of the substrate structure 18. Therefore, the carrier plate 14 may suppress the warping of the substrate structure 18 because the carrier plate 14 may provide sufficient rigidity to resist the warping of the substrate structure 18 caused by temperature changes.

[0065] The tape 16 (e.g., the second element) may be a layer and may include an adhesive material, such as silicone rubber. The tape 16 may be used to temporarily adhere and bond the substrate structure 18 to the carrier plate 14 to reduce warping or deformation of the substrate structure 18 and facilitate handling of the substrate structure 18 during the manufacturing process. The tape 16 may have a first surface (e.g., an upper surface) 161 and a second surface (e.g., a lower surface) 162 opposite to the first surface 161. The second surface 162 of the tape 16 may contact the first surface 141 of the carrier plate 14. The tape 16 may define a plurality of through holes 163 extending through the tape 16. The through holes 163 of the tape 16 may be connected to the through holes 143 of the carrier plate 14. In some embodiments, the through holes 163 of the tape 16 may be aligned with the through holes 143 of the carrier plate 14. In some embodiments, the through holes 163 of the tape 16 may not be aligned with the through holes 143 of the carrier plate 14. In some embodiments, the first surface (e.g., upper surface) 161 of the tape 16 may be substantially aligned with the first surface (e.g., upper surface) 121 of the chuck 12. In some embodiments, the first surface (e.g., upper surface) 161 of the tape 16 may be higher or lower than the first surface (e.g., upper surface) 121 of the chuck 12. In some embodiments, the width of the tape 16 and the width of the carrier plate 14 may be substantially equal to the width of the receiving cavity 123 of the chuck 12.

[0066] In some embodiments, the tape 16 and the carrier plate 14 may further define a plurality of positioning holes 185 ( Figure 3 The chuck 12 may include a plurality of positioning pins 15 ( Figure 3 When the workpiece 11 (or the assembly structure 11) is placed in the receiving cavity 123 of the chuck 12, the positioning pin 15 can be inserted into the positioning hole 185 to fix the position of the workpiece 11 (or the assembly structure 11).

[0067] The substrate structure 18 (e.g., the first element) may have a first surface (e.g., an upper surface) 181 and a second surface (e.g., a lower surface) 182 opposite to the first surface 181. The second surface (e.g., the lower surface) 182 of the substrate structure 18 may be bonded to the first surface (e.g., the upper surface) 161 of the tape 16. The width of the substrate structure 18 may be smaller than the width of the tape 16. Therefore, when the substrate structure 18 is attached to the tape 16, the difference between the width of the substrate structure 18 and the width of the tape 16 may allow for tolerance. The substrate structure 18 may include at least one circuit layer (not shown) therein. For example, the substrate structure 18 may include a ground circuit layer electrically connected to the eject pins 13 for grounding. The semiconductor die 20 may be physically and electrically connected to the first surface (e.g., the upper surface) 181 of the substrate structure 18.

[0068] like Figure 2 , each of the dies 20 (e.g., semiconductor dies 20 or electronic dies 20 or MEMS dies 20) may have a first surface (e.g., upper surface or backside surface) 201, a second surface (e.g., lower surface or active surface) 202, and a side surface 203. The second surface (e.g., lower surface) 202 may be opposite to the first surface 201 and may face the first surface (e.g., upper surface) 181 of the substrate structure 18. The side surface 203 may extend between the first surface 201 and the second surface 202. Each of the semiconductor dies 20 may include at least one bump 21 disposed on the second surface 202 and connected to the substrate structure 18. The semiconductor die 20 may be attached to the substrate structure 18 by flip chip bonding. The second surface 202 of the semiconductor die 20 may be physically and electrically connected to the first surface 181 of the substrate structure 18 by the bump 21. The thickness of the substrate structure 18 may be greater than or less than the thickness of the tape 16.

[0069] like Figure 1 As shown in , the housing 28 may cover the removal joint device 10 and physically separate the first space 31 and the second space 32. Therefore, the first space 31 can be separated or isolated from the second space 32 by the housing 28. In some embodiments, the housing 28 may be a cap structure and may include at least one first part 281 and a second part 282. The first part 281 may be a side wall connected to the first surface (e.g., upper surface) 301 of the machine table 30 and standing on the first surface 301. The second part 282 may be a top cover covering the first part 281. In some embodiments, the first space 31 may be defined by the housing 28 and may be a closed space. That is, the housing 28 may cover the first part 3011 of the first surface (e.g., upper surface) 301 of the machine table 30. In some embodiments, the housing 28 may define an air hole 22, which is configured to discharge the humid air of the first space 31 to the external space (e.g., the second space 32) or introduce the dry air of the external space (e.g., the second space 32) into the first space 31. In some embodiments, the housing 28 may define a first air hole 22 and a second air hole 22. The first air hole 22 may be configured to discharge the humid air of the first space 31 to the external space (e.g., the second space 32). The second air hole 22 may be configured to introduce dry air of the external space (e.g., the second space 32) into the first space 31. Therefore, the first space 31 may be in communication with the external space (e.g., the second space 32) through the air hole 22. The air hole 22 may be an exhaust channel and / or an inlet channel so as to control the first humidity of the first space 31.

[0070] The fluid supply device 24 may be disposed in or outside the first space 31, and may be configured to humidify the first space 31. The fluid supply device 24 may be configured to make the first humidity of the air in the first space 31 greater than the second humidity of the air in the second space 32. In some embodiments, the fluid supply device 24 may include one or more dispensing devices 241 (e.g., nozzles 241), which are configured to dispense liquid to the removal bonding device 10. In some embodiments, the nozzles 241 may be arranged in an array or at least one row. The fluid supply device 24 may be fixed at a position, or may be movable along a path. The nozzles 241 may be opened sequentially or simultaneously. In some embodiments, the nozzles 241 may spray while moving. In some embodiments, the fluid supply device 24 (including the nozzles 241) may be rotatable. For example, the fluid supply device 24 may be configured to apply fluid to the workpiece 11 in the removal bonding device 10. The fluid may include a plurality of ion carriers, or may include a polar material. In some embodiments, the fluid may include an ion flow containing an ion carrier. In some embodiments, the fluid may include a liquid (e.g., water or ethanol) that is a polar material and may contain an ion carrier. In some embodiments, the fluid may include moisture that is a polar material and may contain an ion carrier. Therefore, the polar material of the present disclosure may include water containing an ion carrier and moisture containing an ion carrier. In some embodiments, the fluid may be a mixture of water vapor and carbon dioxide (CO2) gas.

[0071] For example, the fluid supply device 24 may be configured to spray or dispense water onto a receiving surface of the workpiece 11 (e.g., a first surface (e.g., upper surface) 181 of the substrate structure 18 and a first surface (e.g., upper surface) 201 of the semiconductor die 20) in the removal bonding apparatus 10. For example, the fluid supply device 24 may be configured to supply an ion flow including a plurality of ion carriers onto a receiving surface of the workpiece 11 (e.g., a first surface 181 of the substrate structure 18 and a first surface (e.g., upper surface) 201 of the semiconductor die 20) in the removal bonding apparatus 10. The receiving surface of the workpiece 11 (e.g., a first surface (e.g., upper surface) 181 of the substrate structure 18 and a first surface (e.g., upper surface) 201 of the semiconductor die 20) is opposite to a separation surface (e.g., a second surface (e.g., lower surface) 182 of the substrate structure 18 or a first surface (e.g., upper surface) 161 of the tape 16) of the workpiece 11. The separation surface (eg, second surface (eg, lower surface) 182 of substrate structure 18 or first surface (eg, upper surface) 161 of tape 16) may be defined as a surface or interface at which substrate structure 18 may be separated from tape 16 during a debonding process.

[0072] In embodiments where a polar material (e.g., water) is sprayed or dispensed, a plurality of droplets or particles may be formed on a receiving surface of the workpiece 11 (e.g., the first surface 181 of the substrate structure 18 and the first surface 201 of the semiconductor die 20). For example, the polar material (e.g., water) may include a plurality of water droplets spaced apart from one another, or may include a plurality of ion-containing particles spaced apart from one another. Thus, the ion carriers may be divided into a plurality of groups on the receiving surface. Each of the groups contains a portion of the ion carriers, and the groups of ion carriers are spaced apart from one another. Each of the water droplets or each of the ion-containing particles may include each of the groups. In some embodiments, the water droplets (or ion-containing particles) may have different sizes.

[0073] The air supply device 26 may be disposed in the first space 31, and may be configured to provide air to remove liquid from the removal bonding device 10. The air supply device 26 may be configured to move relative to the removal bonding device 10. The air supply device 26 may be configured to blow off liquid (e.g., including a plurality of water droplets) on the receiving surface of the workpiece 11 (e.g., the first surface (e.g., upper surface) 181 of the substrate structure 18 and the first surface (e.g., upper surface) 201 of the semiconductor die 20). In some embodiments, the air supply device 26 may include a plurality of nozzles 261. In some embodiments, the nozzles 261 may be arranged in at least one row to form at least one air knife. In some embodiments, the air supply device 26 (including the nozzles 261) may move along the receiving surface of the workpiece 11 (e.g., the first surface (e.g., upper surface) 181 of the substrate structure 18 and the first surface (e.g., upper surface) 201 of the semiconductor die 20). In some embodiments, the air supply device 26 (including the nozzles 261) may be rotatable. In some embodiments, the air supply device 26 may be configured to blow liquid (e.g., including water droplets) on the receiving surface of the workpiece 11 (e.g., the first surface (e.g., upper surface) 181 of the substrate structure 18 and the first surface (e.g., upper surface) 201 of the semiconductor die 20) to the first groove 125 and / or the second groove 127.

[0074] The ejector pins 13 may protrude from the lower surface 124 of the accommodating cavity 123 of the chuck 12, and may extend through or pass through the through hole 143 of the carrier plate 14 and the through hole 163 of the tape 16. The ejector pins 13 may contact the second surface (e.g., the lower surface) 182 of the substrate structure 18. In some embodiments, the ejector pins 13 may move upward to push the substrate structure 18 upward to perform or implement a debonding process. Therefore, the second surface (e.g., the lower surface) 182 of the substrate structure 18 may leave the first surface (e.g., the upper surface) 161 of the tape 16. The second surface (e.g., the lower surface) 182 of the substrate structure 18 or the first surface (e.g., the upper surface) 161 of the tape 16 may be defined as a separation surface. In some embodiments, each of the ejector pins 13 may push or eject a portion of the substrate structure 18 to move upward to separate, detach, or debond from the tape 16. Figure 3 As shown in FIG. 1 , the ejector pins 13 may be arranged in an array. The ejector pins 13 may push or eject the substrate structure 18 row by row or column by column. That is, the ejector pins 13 may push or eject the substrate structure 18 sequentially.

[0075] The electrostatic sensor 19 may be disposed above the first surface 181 of the substrate structure 18 so as to detect and measure the static electricity of the substrate structure 18 by a non-contact member. For example, the electrostatic sensor 19 may measure and record the change in the static electricity of the substrate structure 18 during the debonding process. If the value measured by the electrostatic sensor 19 exceeds a predetermined value, an alarm signal may be generated and the apparatus 1 may be temporarily shut down.

[0076] like Figure 3 and Figure 4 , the semiconductor die 20 may include at least a first column 20c1 of the semiconductor die 20, a second column 20c2 of the semiconductor die 20, a third column 20c3 of the semiconductor die 20, a first row 20r1 of the semiconductor die 20, a second row 20r2 of the semiconductor die 20, and a third row 20r3 of the semiconductor die 20. The ejector pins 13 may include at least a first column 13c1 of the ejector pins 13, a second column 13c2 of the ejector pins 13, a third column 13c3 of the ejector pins 13, a first row 13r1 of the ejector pins 13, a second row 13r2 of the ejector pins 13, and a third row 13r3 of the ejector pins 13. The columns 13c1, 13c2, 13c3 of the ejector pins 13 may be arranged along the short side of the substrate structure 18. The rows 13r1, 13r2, 13r3 of the ejector pins 13 may be arranged along the long side of the substrate structure 18. In some embodiments, the rows 13r1, 13r2, 13r3 of the ejector pins 13 may be moved upward in sequence (i.e., row by row). Alternatively, the columns 13c1, 13c2, 13c3 of the ejector pins 13 may be moved upward in sequence (i.e., column by column). The first column 13c1 of the ejector pins 13 may not correspond to a semiconductor die. No semiconductor die may be disposed on the first column 13c1 of the ejector pins 13. The second column 13c2 of the ejector pins 13 may correspond to the first column 20c1 of the semiconductor die 20. That is, the first column 20c1 of the semiconductor die 20 may be disposed on the second column 13c2 of the ejector pins 13. The third column 13c3 of the ejector pins 13 may correspond to the second column 20c2 of the semiconductor die 20. That is, the second column 20c2 of the semiconductor die 20 may be disposed on the third column 13c3 of the ejector pins 13. In addition, the first row 13r1 of the ejector pins 13 may not correspond to a semiconductor die. No semiconductor die may be disposed over the first row 13r1 of the ejector pins 13. The second row 13r2 of the ejector pins 13 may correspond to the first row 20r1 of the semiconductor die 20. That is, the first row 20r1 of the semiconductor die 20 may be disposed over the second row 13r2 of the ejector pins 13. The third row 13r3 of the ejector pins 13 may correspond to the second row 20r2 of the semiconductor die 20. That is, the second row 20r2 of the semiconductor die 20 may be disposed over the third row 13r3 of the ejector pins 13. The pitch between the ejector pins 13 may be substantially equal to the pitch between the semiconductor die 20.

[0077] The nozzles 241 of the fluid supply device 24 may include at least a first column 24c1 of the nozzles 241, a second column 24c2 of the nozzles 241, a third column 24c3 of the nozzles 241, a first row 24r1 of the nozzles 241, a second row 24r2 of the nozzles 241, and a third row 24r3 of the nozzles 241. The distribution of the nozzles 241 of the fluid supply device 24 may or may not correspond to the distribution of the ejector pins 13. The distribution of the nozzles 241 of the fluid supply device 24 may or may not correspond to the distribution of the semiconductor die 20. The distribution of the semiconductor die 20 may or may not correspond to the distribution of the ejector pins 13. The first column 24c1 of the nozzles 241 may not correspond to a semiconductor die. No semiconductor die may be disposed under the first column 24c1 of the nozzles 241. The first column 24c1 of the nozzles 241 may correspond to the first column 13c1 of the ejector pins 13. The second column 24c2 of the nozzles 241 may correspond to the second column 20c2 of the semiconductor die 20. That is, the second column 20c2 of the semiconductor die 20 may be disposed under the second column 24c2 of the nozzle 241. The second column 24c2 of the nozzle 241 may correspond to the third column 13c3 of the ejector pins 13. The third column 24c3 of the nozzle 241 may correspond to the fourth column of the semiconductor die 20. That is, the fourth column of the semiconductor die 20 may be disposed under the third column 24c3 of the nozzle 241. The third column 24c3 of the nozzle 241 may correspond to the fifth column of the ejector pins 13. In addition, the first row 24r1 of the nozzle 241 may not correspond to a semiconductor die. There may be no semiconductor die disposed under the first row 24r1 of the nozzle 241. The first row 24r1 of the nozzle 241 may correspond to the first row 13r1 of the ejector pins 13. The second row 24r2 of the nozzle 241 may correspond to the second row 20r2 of the semiconductor die 20. That is, the second row 20r2 of the semiconductor die 20 may be disposed under the second row 24r2 of the nozzle 241. The second row 24r2 of the nozzles 241 may correspond to the third row 13r3 of the ejector pins 13. The third row 24r3 of the nozzles 241 may correspond to the fourth row of the semiconductor die 20. That is, the fourth row of the semiconductor die 20 may be disposed below the third row 24r3 of the nozzles 241. The third row 24r3 of the nozzles 241 may correspond to the fifth row of the ejector pins 13. The spacing between the nozzles 241 of the fluid supply device 24 may be greater than the spacing between the ejector pins 13 and the spacing between the semiconductor die 20. The nozzles 261 of the air supply device 26 may include at least one column of nozzles 261.

[0078] exist Figures 1 to 5In the embodiment shown in , during the debonding process, static electricity may be generated at the second surface (e.g., lower surface) 182 (e.g., separation surface) of the substrate structure 18. The static electricity may damage the semiconductor die 20. In the present disclosure, a liquid (e.g., water or ethanol) may be applied to one side (e.g., the first side or the top side) of the substrate structure 18 through the nozzle 241 of the fluid supply device 24 so as to neutralize a plurality of electrostatic charges adjacent to the first surface 181 of the substrate structure 18. Thus, the static electricity generated at the second surface 182 of the substrate structure 18 may be reduced or eliminated. In addition, the liquid (e.g., water or ethanol) may be blown to the grooves (e.g., the first groove 125 and the second groove 127), and then discharged through the discharge holes (e.g., the first discharge holes 126 and the second discharge holes 128).

[0079] Figure 6 A cross-sectional view of a device 1 a according to some embodiments of the present disclosure is shown. Figure 6 The device 1a can be used with Figure 1 The device 1 is similar to the device 1, except that the structure of the tape 16a is different. Figure 6 Shown in, omitted Figure 1 The through hole 163 of the tape 16. Therefore, Figure 6 The tape 16a may not define a through hole for the ejector pin 13 to extend through or pass through. Therefore, the liquid may not flow into the through hole 143 of the carrier plate 14. In addition, voids and a popcorn effect may be avoided during the reflow process. The ejector pin 13 may contact and push the second surface (e.g., lower surface) 162 of the tape 16a. The ejector pin 13 may not contact the second surface (e.g., lower surface) 182 of the substrate structure 18. In addition, the tape 16 may include a plurality of blocks that are separated and spaced apart from each other. The gaps between the blocks of the tape 16 may allow the ejector pin 13 to extend through or pass through. In addition, individual blocks may be replaced. In addition, the humid air in the first space 31 may enter the gaps between the blocks of the tape 16 to contact the second surface 182 of the substrate structure 18, thereby further reducing static electricity. Therefore, static electricity of the substrate structure 18 can be reduced from the first surface 181 and the second surface 182 of the substrate structure 18.

[0080] Figure 7 A cross-sectional view of a device 1 b according to some embodiments of the present disclosure is shown. Figure 8 Show Figure 7 A partial enlarged view of area "B". Figure 7 and Figure 8 Device 1b can be used with Figure 1 and Figure 2 The device 1 is similar to the device 1, except that the structure of the tape 16b is different. Figure 7 and Figure 8As shown in FIG. 1 , the tape 16b may define a first through hole 163b and a second through hole 164b. The first through hole 163b may include a first sidewall 1631 and a second sidewall 1632 opposite to the first sidewall 1631. The through hole 143 of the carrier plate 14 may include a sidewall 1431. The width of the first through hole 163b of the tape 16b may be greater than the width of the through hole 143 of the carrier plate 14. Therefore, the first sidewall 1631 and the second sidewall 1632 of the first through hole 163b may not be aligned with the sidewall 1431 of the through hole 143. In addition, the central axis of the first through hole 163b may not be aligned with the central axis of the through hole 143. In some embodiments, the first gap G1 between the first sidewall 1631 of the first through hole 163b and the sidewall 1431 of the through hole 143 may be different from the second gap G2 between the second sidewall 1632 of the first through hole 163b and the sidewall 1431 of the through hole 143.

[0081] The second through hole 164b may include a first side wall 1641 and a second side wall 1642 opposite to the first side wall 1641. The through hole 143 of the carrier plate 14 may include a side wall 1431. The width of the second through hole 164b of the tape 16b may be greater than the width of the through hole 143 of the carrier plate 14 and the width of the first through hole 163b of the tape 16b. Therefore, the first side wall 1641 and the second side wall 1642 of the second through hole 164b may not be aligned with the side wall 1431 of the through hole 143. In addition, the central axis of the second through hole 164b may not be aligned with the central axis of the through hole 143. In some embodiments, the third gap G3 between the first side wall 1641 of the second through hole 164b and the side wall 1431 of the through hole 143 may be different from the fourth gap G4 between the second side wall 1642 of the second through hole 164b and the side wall 1431 of the through hole 143. In some embodiments, the third gap G3 may be greater than the first gap G1. The first gap G1 may be larger than the fourth gap G4. The fourth gap G4 may be larger than the second gap G2.

[0082] Fig. 9 A cross-sectional view of a device 1c according to some embodiments of the present disclosure is shown. Fig.10 Show Fig. 9 A partial enlarged view of area "C". Fig. 9 and Fig.10 The device 1c can be used with Figure 7 and Figure 8 The device 1b is similar to the device 16a, except that the structure of the tape 16c is different. Fig. 9 and Fig.10As shown in , the first sidewall 1631c of the first through hole 163c and the first sidewall 1641c of the second through hole 164c may include a curved surface so as to avoid the accumulation of electrostatic charge, which can reduce the amount of electrostatic charge on the second surface 182 of the substrate structure 18. Compared with a right-angle profile, an obtuse profile or a curved profile can avoid charge accumulation and can reduce the amount of charge induced on the second surface 182 of the substrate structure 18. The curvature of the first sidewall 1631c of the first through hole 163c may be smaller than the curvature of the first sidewall 1641c of the second through hole 164c. In addition, the second sidewall 1632c of the first through hole 163c and the second sidewall 1642c of the second through hole 164c may include an inclined flat surface. The slope of the second sidewall 1632c of the first through hole 163c may be greater than the slope of the second sidewall 1642c of the second through hole 164c. In addition, the first surface (e.g., upper surface) 161 of the tape 16c may be a rough surface.

[0083] Fig.11 A top view of a removal engagement device 10d is shown, according to some embodiments of the present disclosure. Fig.12 Show Fig.11 10d is a front view of a removal engagement device 10d. Fig.13 Show Fig.11 A left side view of the removal engagement device 10d. Figure 11 to Figure 13 The removal bonding device 10d can be used with Figure 3 and Figure 4 The removal joint device 10 is the same or similar, and the differences are described as follows. The first groove 125 can be in fluid communication with the second groove 127 so as to intersect each other to form a generally L-shape when viewed from a top view. The second drain hole 128 can be omitted. The first drain hole 126 can be in fluid communication with the bottommost portion of the first groove 125 and the bottommost portion of the second groove 127. The inclined lower surface 1253 of the first groove 125 and the inclined lower surface 1273 of the second groove 127 can both be inclined to and connected to the first drain hole 126. Therefore, the liquid in the first groove 125 and the second groove 127 can be guided to flow to the first drain hole 126.

[0084] Fig.14 A top view of a removal engagement device 10e is shown, according to some embodiments of the present disclosure. Fig.15 Show Fig.14 10e is a front view of a removal engagement device 10e. Fig.16 Show Fig.14 A left side view of the removal engagement device 10e. Fig.17 Show Fig.14 A right side view of the removal engagement device 10e. Figure 14 to Figure 17 The removal bonding device 10e can be used with Figure 11 to Figure 13The removal engagement device 10d is the same or similar to the removal engagement device 10d, and the differences are described as follows. The removal engagement device 10e may further define a third groove 129 and a third drain hole 126'. The third groove 129 may be disposed adjacent to the short side 1213 of the chuck 12 and may be opposite to the second groove 127. The third groove 129 may have an inclined lower surface 1293. The third drain hole 126' may be in fluid communication with the third groove 129. In addition, the first groove 125e may include a first portion 1251 and a second portion 1252. The first portion 1251 of the first groove 125e may have an inclined lower surface 1254, and the second portion 1252 of the first groove 125e may have an inclined lower surface 1255.

[0085] The first groove 125e may be in fluid communication with the second groove 127 and the third groove 129 so as to form a substantially U-shape when viewed from a top view. The first discharge hole 126 may be in fluid communication with the bottommost portion of the first portion 1251 of the first groove 125e and the bottommost portion of the second groove 127. Both the inclined lower surface 1254 of the first portion 1251 of the first groove 125e and the inclined lower surface 1273 of the second groove 127 may be inclined to and connected to the first discharge hole 126. Therefore, liquid in the first portion 1251 and the second groove 127 of the first groove 125e may be guided to flow to the first discharge hole 126. Similarly, the third discharge hole 126' may be in fluid communication with the bottommost portion of the second portion 1252 of the first groove 125e and the bottommost portion of the third groove 129. Both the inclined lower surface 1255 of the second portion 1252 of the first groove 125e and the inclined lower surface 1293 of the third groove 129 may be inclined to and connected to the third discharge hole 126'. Therefore, the liquid in the second portion 1252 of the first groove 125e and the third groove 129 may be guided to flow to the third discharge hole 126'. Fig.15 As shown in FIG. 1 , an intersection portion of the first portion 1251 and the second portion 1252 of the first groove 125 e may be higher than the first and third discharge holes 126 and 126 ′.

[0086] Figures 18 to 39 A method for manufacturing a package structure according to some embodiments of the present disclosure is shown. In some embodiments, the method is used to manufacture Fig.39 The packaging structure 7 shown in FIG.

[0087] refer to Figures 18 to 20 , an assembly structure 11 is provided. The assembly structure 11 can be manufactured as follows. Fig.18 , the adhesive tape 16 may be formed or disposed on the carrier plate 14 . Fig.18 The tape 16 and the carrier plate 14 can be respectively Figure 1The adhesive tape 16 and the carrier plate 14 may be the same or similar. The carrier plate 14 may have a first surface (e.g., an upper surface) 141 and a second surface (e.g., a lower surface) 142 opposite to the first surface 141. The carrier plate 14 may define a plurality of through holes 143 extending through the carrier plate 14. The thickness of the carrier plate 14 may be greater than the thickness of the adhesive tape 16. In addition, the adhesive tape 16 may include an adhesive material. Therefore, the adhesive tape 16 may be bonded to or attached to the carrier plate 14. The adhesive tape 16 may have a first surface (e.g., an upper surface) 161 and a second surface (e.g., a lower surface) 162 opposite to the first surface 161. The second surface 162 of the adhesive tape 16 may contact the first surface 141 of the carrier plate 14. The adhesive tape 16 may define a plurality of through holes 163 extending through the adhesive tape 16. The through holes 163 of the adhesive tape 16 may be connected to the through holes 143 of the carrier plate 14. In some embodiments, the through holes 163 of the tape 16 may be aligned with the through holes 143 of the carrier plate 14. In some embodiments, the through holes 163 of the tape 16 may not be aligned with the through holes 143 of the carrier plate 14.

[0088] refer to Fig.19 , the substrate structure 18 may be bonded to a first surface (eg, upper surface) 161 of the tape 16 . Fig.19 The substrate structure 18 may be Figure 1 The substrate structure 18 may be the same as or similar to the substrate structure 18 of the tape 16. The substrate structure 18 may have a first surface (e.g., upper surface) 181 and a second surface (e.g., lower surface) 182 opposite to the first surface 181. The second surface (e.g., lower surface) 182 of the substrate structure 18 may contact and may be bonded to the first surface (e.g., upper surface) 161 of the tape 16. The width of the substrate structure 18 may be smaller than the width of the tape 16. The substrate structure 18 may include at least one circuit layer (not shown) therein.

[0089] refer to Fig. 20 , a plurality of semiconductor dies 20 may be disposed or placed on a first surface (e.g., upper surface) 181 of the substrate structure 18. Each of the semiconductor dies 20 may have a first surface (e.g., upper surface or backside surface) 201, a second surface (e.g., lower surface or active surface) 202, and a side surface 203 ( Fig. 22). The second surface 202 may be opposite to the first surface 201, and the side surface 203 may extend between the first surface 201 and the second surface 202. Each of the semiconductor dies 20 may include at least one bump 21 disposed on the second surface 202 and connected to the substrate structure 18. Then, a reflow process may be performed. Therefore, the semiconductor die 20 may be attached or mounted to the substrate structure 18 by flip chip bonding. The second surface 202 of the semiconductor die 20 may be physically connected and electrically connected to the first surface 181 of the substrate structure 18 by the bump 21. At the same time, the semiconductor die 20 and the substrate structure 18 may form a combined structure 2. The combined structure 2 (including the semiconductor die 20 and the substrate structure 18), the tape 16, and the carrier plate 14 may form an assembly structure 11. Therefore, the assembly structure 11 may include the combined structure 2 (including the die 20 and the substrate structure 18), the tape 16, and the carrier plate 14. The assembly structure 11 may be a workpiece.

[0090] refer to Fig.21 and Fig. 22 ,in Fig. 22 Show Fig.21 A partial enlarged view of region “D” in device 1 may be provided. Fig.21 Device 1 can be used with Figure 1 Next, the assembly structure 11 may be placed or disposed in the receiving cavity 123 of the chuck 12 of the removal bonding device 10 in the first space 31 (eg, a closed space) formed by the housing 28 in the second space 32 (eg, an indoor environment of a clean room).

[0091] Next, a plurality of polar materials 4 may be dispensed or sprayed toward the first surface 181 of the substrate structure 18 to neutralize a plurality of charges adjacent to the first surface 181 of the substrate structure 18. The plurality of polar materials 4 may be a plurality of ion carriers 4, and may be a fluid 4 (e.g., a first fluid 4a). The polar materials 4 (e.g., ion carriers 4, fluid 4, and first fluid 4a) may be provided onto the substrate structure 18. A portion of the polar materials 4 (e.g., ion carriers 4, fluid 4, and first fluid 4a) may be provided onto the die 20. The polar materials 4 (e.g., ion carriers 4, fluid 4, and first fluid 4a) may be applied to the receiving side (e.g., the top side) of the bonding structure 2 by the nozzle 241 of the fluid supply device 24. In some embodiments, the fluid 4 may include an ion flow containing ion carriers. In some embodiments, the fluid 4 may include a liquid (e.g., water or ethanol) that is a polar material, and may contain ion carriers. In some embodiments, the fluid 4 may include moisture that is a polar material, and may contain ion carriers. As Fig.21 and Fig. 22, the fluid 4 may be a polar material, such as water. In addition, the receiving side (e.g., top side) of the bonded structure 2 may be adjacent to the first surface 181 of the substrate structure 18. For example, the receiving side (e.g., top side) of the bonded structure 2 may include a receiving surface of the bonded structure 2 (e.g., the first surface 181 of the substrate structure 18 and the first surface 201 of the semiconductor die 20).

[0092] In some embodiments, the first fluid 4a may be applied to the receiving side (e.g., top side) of the bonding structure 2 through the first row 24c1 of the nozzles 241, and the other nozzles 241 of the fluid supply device 24 may still be closed. Then, in the following steps, the second fluid 4b ( Fig.25 ) is applied on the receiving side (e.g., top side) of the bonding structure 2. Therefore, the fluid 4 can be applied gradually or sequentially on the receiving side (e.g., top side) of the bonding structure 2. However, in some embodiments, all nozzles 241 of the fluid supply device 24 can be opened at the same time, and therefore, the fluid 4 can be applied on the receiving side (e.g., top side) of the bonding structure 2 at the same time.

[0093] refer to Fig. 22 After the polar material 4 (e.g., ion carrier 4, fluid 4, and first fluid 4a) is sprayed or dispensed through the nozzle 241 of the fluid supply device 24, a plurality of droplets 40 (e.g., water droplets) or particles may be formed on the receiving surface of the bonding structure 2 (e.g., the first surface 181 of the substrate structure 18 and the first surface 201 of the semiconductor die 20). The droplets 40 (e.g., water droplets) may be spaced apart from each other, and each of the droplets 40 (e.g., water droplets) may contain a group of ion carriers. Therefore, the polar material 4 (e.g., ion carrier 4, fluid 4, and first fluid 4a) may partially cover the first surface 181 of the substrate structure 18. Therefore, a plurality of groups of ion carriers are applied to the receiving surface of the bonding structure 2 (e.g., the first surface 181 of the substrate structure 18 and the first surface 201 of the semiconductor die 20). Each of the groups contains a portion of a plurality of ion carriers, and the groups of ion carriers are spaced apart from each other.

[0094] In some embodiments, the droplets 40 (e.g., water droplets) may include a plurality of first droplets 41 (e.g., first water droplets), a plurality of second droplets 42 (e.g., second water droplets), and a plurality of third droplets 43 (e.g., third water droplets). Some of the polar materials 4 (e.g., ion carriers 4, fluid 4, and first fluid 4a) may gather to form first droplets 41 (e.g., first water droplets) on the first surface 181 of the substrate structure 18. The first droplets 41 may be formed in a time sequence or a spatial sequence. Some of the polar materials 4 (e.g., ion carriers 4, fluid 4, and first fluid 4a) may gather to form second droplets 42 (e.g., second water droplets) on the first surface 201 of the semiconductor die 20. Some of the polar materials 4 (e.g., ion carriers 4, fluid 4, and first fluid 4a) may gather to form third droplets 43 (e.g., third water droplets) on the side 203 of the semiconductor die 20. Therefore, the polar material 4 (e.g., ion carrier 4, fluid 4, and first fluid 4a) may partially cover the first surface 181 of the substrate structure 18, the upper surface 201 of the die 20, and the side 203 of the die 20 after dispensing. The mean particle size (or average particle size) of the first droplet 41 (e.g., first water droplet), the second droplet 42 (e.g., second water droplet), and the third droplet 43 (e.g., third water droplet) may be equal to or different from each other. The distribution density of the first droplet 41 (e.g., first water droplet), the second droplet 42 (e.g., second water droplet), and the third droplet 43 (e.g., third water droplet) may be equal to or different from each other.

[0095] refer to Fig.23 and Fig.24 ,in Fig.24 Show Fig.23, at least a portion of the substrate structure 18 may be debonded from the tape 16. For example, the second surface 182 of the substrate structure 18 may be debonded from the tape 16. In some embodiments, after the ion carrier 4 is provided onto the substrate structure 18, the substrate structure 18 may be debonded from the tape 16. For example, the first column 13c1 of the ejector pins 13 may be moved upward. Therefore, the first portion 182a of the second surface (e.g., lower surface) 182 of the substrate structure 18 may be pushed upward by the first column 13c1 of the ejector pins 13 so as to be debonded or separated from the first surface (e.g., upper surface) 161 of the tape 16. Therefore, the second surface (e.g., lower surface) 182 of the substrate structure 18 or the first surface (e.g., upper surface) 161 of the tape 16 may be defined as a separation surface. Meanwhile, during the debonding process, a plurality of undesirable charges (e.g., electrostatic charges) may be generated at the second surface (e.g., lower surface) 182 of the substrate structure 18, and a plurality of induced charges (e.g., electrostatic charges) may also be generated adjacent to the first surface (e.g., upper surface) 181 of the substrate structure 18. In some embodiments, the polar material 4 (e.g., ion carriers 4 and fluid 4) may be applied to the second surface 182 of the substrate structure 18 where the induced charges (e.g., electrostatic charges) are generated, rather than to the first surface 181 of the substrate structure 18 where the charges (e.g., electrostatic charges) are directly generated.

[0096] In some embodiments, debonding the second surface 182 of the substrate structure 18 from the tape 16 may include debonding the first portion 182a after dispensing the polar material 4 (eg, ion carrier 4, fluid 4, and first fluid 4a) toward the first portion 182a.

[0097] In the present disclosure, the polar material 4 (e.g., ion carrier 4, fluid 4, and first fluid 4a) applied on the receiving side of the bonding structure 2 (including the receiving surface of the bonding structure 2 (e.g., the first surface 181 of the substrate structure 18 and the first surface 201 of the semiconductor die 20)) can neutralize the charge (e.g., electrostatic charge) so as to eliminate or reduce the static electricity generated during the debonding process. In some embodiments, the plurality of ions in the polar material 4 (e.g., ion carrier 4, fluid 4, and first fluid 4a) can be configured to reduce the static electricity generated during the debonding process. In some embodiments, the charge adjacent to the first surface 181 of the substrate structure 18 can be neutralized before the second surface 182 of the substrate structure 18 is debonded from the tape 16. Therefore, the semiconductor die 20 can be protected from damage due to static electricity. In some embodiments, the fluid 4 can include an ion flow containing an ion carrier. In some embodiments, the fluid 4 can include a liquid (e.g., water or ethanol) that is a polar material, and can contain an ion carrier. In some embodiments, the fluid 4 can include moisture that is a polar material, and can contain an ion carrier. In some embodiments, the fluid 4 (eg, the first fluid 4a) may be continuously applied during the debonding process. In some embodiments, the polar material 4 may be dispensed onto the second surface 182 of the substrate structure 18, such as Fig.24 As shown in .

[0098] refer to Fig.25 and Fig.26 ,in Fig.26 Show Fig.25, a second fluid 4b may be applied to the receiving side (e.g., top side) of the bonded structure 2 by the second column 24c2 of the nozzle 241. In some embodiments, the second fluid 4b may be the same as the first fluid 4a. Then, the first column 13c1 of the ejector pins 13 may stop moving, and the second column 13c2 of the ejector pins 13 may move upward. Therefore, the second portion 182b of the second surface (e.g., lower surface) 182 of the substrate structure 18 may be pushed upward by the second column 13c2 of the ejector pins 13 so as to be debonded or separated from the first surface (e.g., upper surface) 161 of the tape 16. At the same time, during the debonding process, undesirable static electricity may be generated at the second surface (e.g., lower surface) 182 of the substrate structure 18, and a plurality of electrostatic charges may also be generated adjacent to the first surface (e.g., upper surface) 181 of the substrate structure 18. Such electrostatic charges adjacent to the first surface 181 of the substrate structure 18 may be neutralized by the fluid 4 including, for example, the first fluid 4a and the second fluid 4b. Therefore, static electricity generated during the debonding process can be eliminated or reduced. In some embodiments, polar materials 4 (e.g., ion carriers 4, fluids 4, and first fluids 4a) may be dispensed toward the first portion 182a of the substrate structure 18, and then the polar materials may be dispensed toward the second portion 182b of the substrate structure 18. That is, the plurality of polar materials 4 are dispensed toward the first portion 182a of the substrate structure 18 before the plurality of polar materials 4 are dispensed toward the second portion 182b of the substrate structure 18. The first portion 182a of the substrate structure 18 is closer to the periphery of the substrate structure 18, and the second portion 182b of the substrate structure 18 is closer to the center of the substrate structure 18.

[0099] like Fig.25 and Fig.26 As shown in FIG. 1 , during the debonding process, the fluid 4 (e.g., the first fluid 4a and the second fluid 4b) may remain on the receiving side of the bonded structure 2 (including the receiving surface of the bonded structure 2 (e.g., the first surface 181 of the substrate structure 18 and the first surface 201 of the semiconductor die 20)). That is, the fluid 4 (e.g., the first fluid 4a and the second fluid 4b) may be removed after the debonding process is completed. In some embodiments, during the debonding process, the fluid 4 (e.g., the first fluid 4a and the second fluid 4b) may be continuously applied.

[0100] refer to Fig. 27 and Fig.28 ,in Fig.28 Show Fig. 27, the first column 24c1 of the nozzle 241 may be closed to stop applying the first fluid 4a. The second column 13c2 of the ejector pins 13 may stop moving, and the third column 13c3 of the ejector pins 13 may move upward. Therefore, the third portion 182c of the second surface (e.g., lower surface) 182 of the substrate structure 18 may be pushed upward by the third column 13c3 of the ejector pins 13 so as to be debonded or separated from the first surface (e.g., upper surface) 161 of the tape 16. Meanwhile, during the debonding process, undesirable static electricity may be generated at the second surface (e.g., lower surface) 182 of the substrate structure 18, and a plurality of electrostatic charges may be generated adjacent to the first surface (e.g., upper surface) 181 of the substrate structure 18. Such electrostatic charges adjacent to the first surface 181 of the substrate structure 18 may be neutralized by the fluid 4 including, for example, the second fluid 4b. Therefore, static electricity generated during the debonding process may be eliminated or reduced.

[0101] like Fig. 27 and Fig.28 , during the debonding process, the fluid 4 (e.g., the second fluid 4b) may be maintained on the receiving side of the bonded structure 2 (including the receiving surface of the bonded structure 2 (e.g., the first surface 181 of the substrate structure 18 and the first surface 201 of the semiconductor die 20)). In some embodiments, during the debonding process, the fluid 4 (e.g., the second fluid 4b) may be continuously applied. In some embodiments, the fluid 4 may be applied on the first surface 181 of the substrate structure 18 according to the portion of the substrate structure 18 that is debonded with the tape 16. For example, when the third portion 182c of the second surface (e.g., the lower surface) 182 of the substrate structure 18 is debonded with the tape 16, the first column 24c1 of the nozzle 241 may be closed to stop applying the first fluid 4a, and the second column 24c2 of the nozzle 241 may be opened to apply the second fluid 4b.

[0102] refer to Fig.29 , repeat with Figure 23 to Figure 28 , so that the entire bonded structure 2 (including the semiconductor die 20 and the substrate structure 18) is completely debonded or separated from the tape 16. Therefore, the entire substrate structure 18 can be gradually or sequentially debonded or separated from the tape 16. The fluid 4 can be gradually or sequentially applied to the receiving side of the bonded structure 2 (including the receiving surface of the bonded structure 2 (for example, the first surface 181 of the substrate structure 18 and the first surface 201 of the semiconductor die 20)). At the same time, the bonded structure 2 is supported by the ejector pins 13. In some embodiments, the bonded structure 2 can be positioned by positioning pins.

[0103] Next, the nozzle 261 of the air supply device 26 may be opened to provide a downward air flow 8, such as an air knife. In some embodiments, the air flow 8 may include ions to neutralize the charge adjacent to the first surface 181 of the substrate 18. That is, the air supply device 26 may include an ionizer. In addition, the air supply device 26 may be moved from a position corresponding to the short side 1213 of the chuck 12 to a position corresponding to the short side 1212 of the chuck 12 so as to blow the fluid 4 (including, for example, the droplet 40) to an area outside the substrate structure 18 (for example, the second groove 127). Therefore, the polar material 4 (for example, the ion carrier 4, the fluid 4, the droplet 40) may be removed from the first surface (for example, the upper surface) 181 of the substrate structure 18. For example, the first droplet 41 (for example, the first water droplet) may be removed from the first surface 181 of the substrate structure 18.

[0104] refer to Fig.30 In some embodiments, before the air supply device 26 moves, one end (e.g., the right end) of the combined structure 2 (including the semiconductor die 20 and the substrate structure 18) may be lifted upward by the ejector pin 13. Therefore, the second surface (e.g., the lower surface) 182 of the substrate structure 18 may not be parallel to the first surface (e.g., the upper surface) 161 of the tape 16. Alternatively, the substrate structure 18 may not be parallel to the moving direction of the air supply device 26. The angle between the second surface (e.g., the lower surface) 182 of the substrate structure 18 and the first surface (e.g., the upper surface) 161 of the tape 16 may be greater than 0 degrees and less than 45 degrees. Next, the nozzle 261 of the air supply device 26 may be opened to provide a downward airflow 8. Since the combined structure 2 (including the semiconductor die 20 and the substrate structure 18) is tilted, Fig.30 The air pressure of the air flow 8 can be less than Fig.29 The air pressure of the air flow 8.

[0105] refer to Fig.31 When the air supply device 26 moves to a position corresponding to the short side 1212 of the chuck 12, the fluid 4 (including, for example, droplets 40) on the bonded structure 2 (including the semiconductor die 20 and the substrate structure 18) can be removed. Then, the humid air in the first space 31 can be discharged to the external space (for example, the second space 32) through the air holes 22. Dry air or hot air in the external space (for example, the second space 32) can be introduced into the first space 31 through the air holes 22 to dry the bonded structure 2 (including the semiconductor die 20 and the substrate structure 18).

[0106] refer to Fig.32, a suction device 5 may be used to remove the bonded structure 2 (including the semiconductor die 20 and the substrate structure 18) from the tape 16 in the removal bonding apparatus 10. The suction device 5 may be connected to a vacuum source, and may include a main body 50, at least one protrusion 52, and at least one suction head 54. The protrusion 52 may protrude from the main body 50. The suction head 54 may be connected to the protrusion 52. The contact end of the suction head 54 may contact and adsorb a portion of the first surface (e.g., upper surface) 181 of the substrate structure 18. Therefore, the entire bonded structure 2 (including the semiconductor die 20 and the substrate structure 18) may be lifted by the suction device 5. That is, the suction device 5 may adsorb the bonded structure 2 (including the semiconductor die 20 and the substrate structure 18), and may move upward together with the bonded structure 2 (including the semiconductor die 20 and the substrate structure 18).

[0107] refer to Fig.33 , the combined structure 2 (including the semiconductor die 20 and the substrate structure 18) can be placed on the boat 62 by the suction device 5. Then, the vacuum of the suction head 54 can be released. Then, the suction device 5 can be moved upward to leave the combined structure 2 (including the semiconductor die 20 and the substrate structure 18).

[0108] refer to Fig.34 , the bonded structure 2 (including the semiconductor die 20 and the substrate structure 18) may be dried by hot air provided by a dryer (not shown).

[0109] refer to Fig.35 A cover 64 may be formed or disposed on the periphery of the first surface (eg, upper surface) 181 of the substrate structure 18 and on the boat 62 to secure the combined structure 2 (including the semiconductor die 20 and the substrate structure 18 ) on the boat 62 to form a unit 65 .

[0110] refer to Fig.36 , a plurality of units 65 (including the bonded structure 2, the boat 62 and the cover 64) are placed in a magazine 66. Then, the magazine 66 can be immersed in the solution in the tank so as to wash the bonded structure 2.

[0111] refer to Fig.37 , the combined structure 2 (including the semiconductor die 20 and the substrate structure 18) can be taken out from the cassette 66. Then, an underfill 72 can be formed between the second surface 202 of the semiconductor die 20 and the first surface (e.g., upper surface) 181 of the substrate structure 18 so as to cover the bumps 21.

[0112] refer to Fig.38, a molding compound 74 may be formed on a first surface (e.g., upper surface) 181 of the substrate structure 18 to cover the semiconductor die 20 and the underfill 72 to form a molded structure 75. Next, a plurality of external connectors (e.g., solder balls) 76 may be formed on a second surface (e.g., lower surface) 182 of the substrate structure 18. The molded structure 75 may have a plurality of cut lines 77 between the semiconductor die 20.

[0113] refer to Fig.39 , a singulation process may be performed along the cutting lines 77 to obtain a plurality of packaging structures 7 .

[0114] Fig.40 A method for manufacturing a packaging structure according to some embodiments of the present disclosure is shown. Fig.40 The initial stages of the method are Figures 18 to 20 The stages shown in are the same or at least similar. Fig.40 Depicted in Fig. 20 The stage following the stage depicted in .

[0115] refer to Fig.40 , all nozzles 241 of the fluid supply device 24 may be opened simultaneously. Therefore, the fluid 4 (e.g., water) may be applied to cover and contact the entire first surface (e.g., upper surface) 181 of all semiconductor dies 20 and substrate structure 18. The fluid 4 (e.g., water) on the first surface (e.g., upper surface) 181 of the semiconductor die 20 and substrate structure 18 may be in a liquid state rather than in a droplet state. The bonded structure 2 (including the semiconductor die 20 and substrate structure 18) may be immersed in the fluid 4 (e.g., water).

[0116] Corresponds to Fig.40 The subsequent stages of the method are Figure 23 to Figure 39 The stages shown in FIG. 1 are identical or at least similar to those shown in FIG. 1 , so as to obtain Fig.39 Packaging structure 7.

[0117] Fig.41 and Fig.42 A method for manufacturing a packaging structure according to some embodiments of the present disclosure is shown. Fig.41 and Fig.42 The initial stages of the method are Figures 18 to 20 The stages shown in are the same or at least similar. Fig.41 Depicted in Fig. 20 The stage following the stage depicted in .

[0118] refer to Fig.41 and Fig.42 ,in Fig.42 Show Fig.41A partial enlarged view of region “H” of device 1 may be provided. Fig.41 Device 1 can be used with Figure 1 The assembly structure 11 may then be placed or disposed in the receiving cavity 123 of the chuck 12 from which the bonding apparatus 10 is removed. Then, the fluid 4 (e.g., the first fluid 4a) may be applied to the receiving side (e.g., the top side) of the bonded structure 2 through the nozzles 241 of the fluid supply device 24. In some embodiments, the first fluid 4a may be applied to the receiving side (e.g., the top side) of the bonded structure 2 through the first column 24c1 of the nozzles 241, and the other nozzles 241 of the fluid supply device 24 may still be closed. Fig.41 The amount of the first fluid 4a in the Fig.21 The amount of the first fluid 4a in Fig.42 As shown in , there may not be a third droplet disposed on the side 203 of the semiconductor die 20. There may only be a first droplet 41 disposed on the first surface 181 of the substrate structure 18 and a second droplet 42 disposed on the first surface 201 of the semiconductor die 20.

[0119] Corresponds to Fig.41 and Fig.42 The subsequent stages of the method are Figure 23 to Figure 39 The stages shown in FIG. 1 are identical or at least similar to those shown in FIG. 1 , so as to obtain Fig.39 Packaging structure 7.

[0120] Figure 43 to Figure 45 A method for manufacturing a packaging structure according to some embodiments of the present disclosure is shown. Figure 43 to Figure 45 The initial stages of the method are Figures 18 to 20 The stages shown in are the same or at least similar. Fig.43 Depicted in Fig. 20 The stage following the stage depicted in .

[0121] refer to Fig.43 , the assembly structure 11 may be immersed in a fluid 4 (eg, water) in a tank 80 to remove the flux.

[0122] refer to Fig.44 and Fig.45 ,in Fig.45 Show Fig.44 A partial enlarged view of region "I" in device 1a may be provided. Fig.44 The device 1a can be used with Figure 1 The assembly structure 11 can then be removed from the tank 80 and placed or disposed in the receiving cavity 123 of the chuck 12 of the removal device 10. Fig.45, there may be no third droplet disposed on the side 203 of the semiconductor die 20 and no second droplet disposed on the first surface 201 of the semiconductor die 20. There may only be a first droplet 41 disposed on the first surface 181 of the substrate structure 18.

[0123] Corresponds to Figure 43 to Figure 45 The subsequent stages of the method are Figure 23 to Figure 39 The stages shown in FIG. 1 are identical or at least similar to those shown in FIG. 1 , so as to obtain Fig.39 Packaging structure 7.

[0124] Fig.46 A method for manufacturing a packaging structure according to some embodiments of the present disclosure is shown. Fig.46 The initial stages of the method are Figures 18 to 22 The stages shown in are the same or at least similar. Fig.46 Depicted in Fig.21 and Fig. 22 The stage following the stage depicted in .

[0125] refer to Fig.46 , the two ends of the substrate structure 18 may be removed from the tape 16 before the center of the substrate structure 18 is removed from the tape 16. In some embodiments, the two ends of the substrate structure 18 may be removed from the tape 16 at the same time or at different times. In some embodiments, all nozzles 241 of the fluid supply device 24 may be opened at the same time, such as Fig.47 As shown in .

[0126] Corresponds to Fig.46 The subsequent stages of the method are Figure 24 to Figure 39 The stages shown in FIG. 1 are identical or at least similar to those shown in FIG. 1 , so as to obtain Fig.39 Packaging structure 7.

[0127] Fig.48 A method for manufacturing a packaging structure according to some embodiments of the present disclosure is shown. Fig.48 The initial stages of the method are Figures 18 to 20 The stages shown in are the same or at least similar. Fig.48 Depicted in Fig. 20 The stage following the stage depicted in .

[0128] refer to Fig.48, all nozzles 241 of the fluid supply device 24 may be opened at the same time. Thus, the fluid 4 (e.g., water) may be applied to the substrate structure 18. The fluid 4 (e.g., water) may be continuously provided to the substrate structure 18 until the elevation of the top portion 4t of the aggregate of the fluid 4 (e.g., water) is lower than the elevation of the upper surface 201 of the die 20. The fluid 4 (e.g., water) may contact the side 203 of the semiconductor die 20, but does not cover all the semiconductor die 20 and the entire first surface 181 of the substrate structure 18. There may be some gaps between some of the semiconductor die 20 and the substrate structure 18. Some of the fluid 4 (e.g., water) on the first surface 181 of the substrate structure 18 may be in a droplet state.

[0129] In some embodiments, if the fluid 4 (e.g., water) is further ejected, the amount of the fluid 4 (e.g., water) may increase. Therefore, the fluid 4 (e.g., water) may cover the entire first surface 181 of the substrate structure 18. The fluid 4 (e.g., water) on the first surface 181 of the substrate structure 18 may be in a liquid state rather than in a droplet state, such as Fig.49 As shown in .

[0130] like Fig.49 As shown in FIG. 1 , the step of providing the polar material 4 (e.g., ion carrier 4 and fluid 4) onto the substrate structure 18 may include continuously providing the polar material 4 (e.g., ion carrier 4 and fluid 4) onto the substrate structure 18 to form at least one aggregate of the polar material 4 (e.g., ion carrier 4 and fluid 4). The top elevation of the top portion 4t of the at least one aggregate is lower than the elevation of the upper surface 201 of the die 20.

[0131] Corresponds to Fig.48 The subsequent stages of the method are Figure 23 to Figure 39 The stages shown in FIG. 1 are identical or at least similar to those shown in FIG. 1 , so as to obtain Fig.39 Packaging structure 7.

[0132] Unless otherwise specified, spatial descriptions such as "above", "below", "up", "left", "right", "lower", "top", "bottom", "vertical", "horizontal", "side", "above", "below", "upper", "above", "below", etc. are indicated relative to the orientation shown in the figures. It should be understood that the spatial descriptions used herein are for illustrative purposes only, and that embodiments of the structures described herein may be spatially arranged in any orientation or manner, provided that the advantages of the embodiments of the present disclosure are not deviated by such arrangements.

[0133] As used herein, the terms "approximately," "substantially," "substantially," and "about" are used to describe and explain minor variations. When used in conjunction with an event or circumstance, the terms may refer to instances where the event or circumstance occurred exactly as well as instances where the event or circumstance occurred very approximately. For example, when used in conjunction with a numerical value, the terms may refer to a range of variation of less than or equal to ±10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. For example, if a first numerical value is within a range of variation of less than or equal to ±10% of a second numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%, then the first numerical value may be considered to be "substantially" the same as or equal to the second numerical value. For example, "substantially" perpendicular may refer to an angular variation range of less than or equal to ±10° relative to 90°, such as less than or equal to ±5°, less than or equal to ±4°, less than or equal to ±3°, less than or equal to ±2°, less than or equal to ±1°, less than or equal to ±0.5°, less than or equal to ±0.1°, or less than or equal to ±0.05°. For example, a characteristic or quantity may be considered "substantially" consistent if the maximum value of the characteristic or quantity is within a variation range of less than or equal to +10% of the minimum value of the characteristic or quantity, such as less than or equal to +5%, less than or equal to +4%, less than or equal to +3%, less than or equal to ±2%, less than or equal to +1%, less than or equal to +0.5%, less than or equal to +0.1%, or less than or equal to +0.05%.

[0134] If the displacement between the two surfaces is no more than 5 μm, no more than 2 μm, no more than 1 μm, or no more than 0.5 μm, then the two surfaces can be considered to be coplanar or substantially coplanar. If the displacement between the highest point and the lowest point of a surface is no more than 5 μm, no more than 2 μm, no more than 1 μm, or no more than 0.5 μm, then the surface can be considered to be substantially flat.

[0135] As used herein, the singular forms "a," "an," and "the" may include plural or plural referents unless the context clearly dictates otherwise.

[0136] As used herein, the terms "conductive," "electrically conductive," and "conductivity" refer to the ability to carry an electric current. Conductive materials generally refer to materials that present little or no resistance to the flow of electric current. One unit of measurement for conductivity is Siemens per meter (S / m). Typically, a conductive material is a material that has a conductivity greater than about 10 4 S / m, for example at least 10 5 S / m or at least 10 6 S / m of a material. The conductivity of a material sometimes varies with temperature. Unless otherwise specified, the conductivity of a material is measured at room temperature.

[0137] In addition, amounts, ratios and other numerical values ​​are sometimes presented in this article in a range format. It should be understood that such a range format is used for the sake of convenience and brevity, and should be flexibly understood to include not only the values ​​explicitly specified as the limits of the range, but also all individual values ​​or sub-ranges contained within the range, as if each value and sub-range were explicitly specified.

[0138] Although the present disclosure has been described and illustrated with reference to specific embodiments of the present disclosure, these descriptions and illustrations are not restrictive. It should be understood by those skilled in the art that various changes may be made and equivalents may be replaced without departing from the true spirit and scope of the present disclosure as defined by the appended claims. The illustrations may not necessarily be drawn to scale. Due to manufacturing processes and tolerances, there may be differences between the process reproduction in the present disclosure and the actual equipment. There may be other embodiments that are not specifically shown in the present disclosure. The specification and drawings should be regarded as illustrative rather than restrictive. Modifications may be made to make specific situations, materials, material compositions, methods or processes suitable for the goals, spirit and scope of the present disclosure. All such modifications are deemed to be included within the scope of the appended claims. Although the disclosed method has been described herein with reference to specific operations performed in a specific order, it should be understood that these operations may be combined, subdivided or reordered to form equivalent methods without departing from the teachings of the present disclosure. Therefore, unless specifically indicated herein, the order and grouping of operations are not limitations of the present disclosure.

Claims

1. A method for manufacturing a packaging structure, comprising: providing an assembly structure comprising a substrate structure and an adhesive tape, wherein the substrate structure has a first surface and a second surface opposite to the first surface and bonded to the adhesive tape; removing engagement of the second surface of the substrate structure with the tape; as well as Prior to removing the second surface of the substrate structure from engagement with the tape, a plurality of charges adjacent to the first surface of the substrate structure are neutralized. 2 . The method of claim 1 , further comprising dispensing a plurality of polar materials toward the first surface of the substrate structure to neutralize the plurality of charges. 3 . The method of claim 2 , further comprising removing the plurality of polar materials from the first surface of the substrate structure.

4. The method according to claim 2, further comprising: The first surface of the substrate structure is partially covered with the plurality of polar materials.

5. The method of claim 4 , wherein the assembly structure includes a die disposed adjacent to the first surface of the substrate structure, the die having a lower surface, an upper surface, and a side surface facing the first surface of the substrate structure, wherein the plurality of polar materials partially cover the first surface of the substrate structure, the upper surface of the die, and the side surface of the die after being dispensed.

6. The method according to claim 1, further comprising: The plurality of polar materials are dispensed toward a first portion of the substrate structure before being dispensed toward a second portion of the substrate structure, wherein the first portion of the substrate structure is closer to a periphery of the substrate structure and the second portion of the substrate structure is closer to a center of the substrate structure.

7. The method of claim 6, wherein the step of debonding the second surface of the substrate structure to the tape comprises debonding the first portion after dispensing the plurality of polar materials toward the first portion.

8. The method of claim 1, further comprising dispensing a plurality of polar materials onto the second surface of the substrate structure.

9. A method for manufacturing a packaging structure, comprising: providing an assembly structure comprising a substrate structure bonded to a tape and a die disposed on the substrate structure; providing a plurality of ion carriers onto the substrate structure; as well as After providing the plurality of ion carriers onto the substrate structure, the substrate structure is debonded with the tape.

10. The method of claim 9, wherein the plurality of ions in the ion carrier are configured to reduce static electricity generated during a debonding process. The method of claim 10 , wherein the plurality of ion carriers are fluids.

12. The method according to claim 9, wherein the step of providing the plurality of ion carriers onto the substrate structure comprises continuously providing the plurality of ion carriers onto the substrate structure to form at least one aggregate of the plurality of ion carriers, wherein the top elevation of the at least one aggregate is lower than the elevation of the upper surface of the die.

13. The method of claim 9, wherein the step of providing the plurality of ion carriers onto the substrate structure comprises: A portion of the plurality of ionophores is provided onto the die.

14. The method according to claim 9, further comprising: The plurality of ion carriers are aggregated to form a plurality of droplets on the surface of the substrate structure. The method according to claim 14 , wherein the plurality of droplets are formed in a temporal sequence or in a spatial sequence.

16. The method according to claim 14, further comprising: The plurality of droplets are removed from the surface of the substrate structure.

17. An apparatus for manufacturing a packaging structure, comprising: First Space; a debonding device disposed in the first space and configured to perform a debonding process; a second space disposed around the first space; as well as The fluid supply device is configured to make a first humidity of the air in the first space greater than a second humidity of the air in the second space.

18. The apparatus of claim 17, wherein the fluid supply comprises a dispensing device configured to dispense a liquid to the removal engagement apparatus.

19. The apparatus of claim 17, further comprising: An air supply is disposed in the first space and is configured to provide air to remove liquid from the removal engagement device.

20. The apparatus of claim 19, wherein the air supply is configured to move relative to the de-engaging apparatus.

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