Wafer bonding alignment method, wafer bonding method, and wafer bonding alignment apparatus

Abstract

This application provides a wafer bonding alignment method, a wafer bonding method, and a wafer bonding alignment apparatus. The wafer bonding alignment method includes: measuring the distance S0 between a first and a second ranging element that are relatively spaced apart in a first direction; controlling the second ranging element to measure n first marker points A1, A2, ..., A3 on the bonding surface of a first wafer. n The distance S between each of the second ranging element and the first ranging element in the first direction 11 S 12 ... S 1n The first ranging element is controlled to measure n second marker points B1, B2, ..., B on the bonding surface of the second wafer. n The distance S between each of the first ranging elements and the first ranging element in the first direction 21 S 22 ... S 2n Controlling the movement of at least one of the first and second support structures causes the first wafer and the second wafer to move toward each other, so that each first mark point A i and the corresponding second marker point B i The distance between them moving towards each other is S. 1i +S 2i -S0-S t This can improve the reliability of wafer bonding alignment.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a wafer bonding alignment method, a wafer bonding method, and a wafer bonding alignment device. Background Technology

[0002] In the wafer-to-wafer bonding process, if the wafers cannot be kept parallel before bonding or if the wafers cannot be moved to the required spacing distance before bonding, the reliability of the wafer-to-wafer bonding will be poor, which will lead to wafer bonding failure or poor product performance after wafer bonding. Summary of the Invention

[0003] This application addresses the shortcomings of related technologies by proposing a wafer bonding alignment method, a wafer bonding method, and a wafer bonding alignment device to solve the problem of poor wafer bonding reliability in related technologies.

[0004] This application provides a wafer bonding alignment method, including:

[0005] The distance S0 between a first ranging element and a second ranging element that are set at a relative interval is measured in a first direction, where the first direction is the direction from the first ranging element to the second ranging element.

[0006] The first carrier structure carrying the first wafer is controlled to move to a first position between the first ranging element and the second ranging element, with the bonding surface of the first wafer facing the second ranging element; the second ranging element is controlled to measure n first marker points A1, A2, ..., A on the bonding surface of the first wafer. n The distance S between each of the second ranging element and the first ranging element in the first direction 11 S 12 ... S 1n Mark points A1, A2, ..., A n At least three of the first marker points are not collinear; n is a positive integer greater than or equal to 3;

[0007] The system controls the first support structure carrying the first wafer to move from the first position to an idle position; the idle position and the first position are located in the same plane perpendicular to the first direction; and controls the second support structure carrying the second wafer to move to a second position opposite to the first position, wherein the distance between the second position and the first ranging element is greater than the distance between the first position and the first ranging element in the first direction, and the bonding surface of the second wafer faces the first ranging element; and controls the first ranging element to measure n second marker points B1, B2, ..., B on the bonding surface of the second wafer. na distance S between each of the first alignment elements and the corresponding second alignment element in the first direction 21 , S 22 , …, S 2n , at least three of the marking points B1, B2, …, B n are not collinear; wherein each of the second marking points B i corresponds to one of the first marking points A i , and i is selected from 1 to n;

[0008] controlling the first carrier structure carrying the first wafer to move from the idle position to the first position, so that the bonding surface of the first wafer faces the bonding surface of the second wafer; wherein the line between each of the first marking points A i and the corresponding second marking points B i is parallel to the first direction;

[0009] controlling at least one of the first carrier structure and the second carrier structure to move, so that the first wafer and the second wafer move towards each other, so that the distance between each of the first marking points A i and the corresponding second marking points B i moves towards each other is S 1i + S 2i - S0-S t , i is selected from 1 to n, and S t is a preset distance between the first wafer and the second wafer before bonding.

[0010] In some embodiments, the first carrier structure is connected to n first adjusting elements M 11 , M 12 , …, M 1n away from one side of the first wafer, the line between the first adjusting elements M 1i and the first marking points A i is parallel to the first direction, i is selected from 1 to n, and n is a positive integer greater than or equal to 3; the controlling at least one of the first carrier structure and the second carrier structure to move, so that the first wafer and the second wafer move towards each other comprises: controlling the first adjusting elements M 11 , M 12 , …, M 1n to move, so that the first wafer moves towards the second wafer;

[0011] And / or, the second carrier structure is connected to n second adjusting elements M 21 , M 22 , …, M 2n away from one side of the second wafer, the line between the second adjusting elements M 2ia line between the second mark point B i parallel to the first direction, i is selected from 1 to n, n is a positive integer greater than or equal to 3; the control at least one of the first bearing structure and the second bearing structure to move, so that the first wafer and the second wafer move towards each other, including: control the second adjusting element M 21 , M 22 , …, M 2n move, so that the second wafer moves towards the direction close to the first wafer.

[0012] In some embodiments, the distance S0 between the first distance measuring element and the second distance measuring element arranged at a relative interval in the first direction includes:

[0013] The first distance measuring element transmits a first distance measuring signal to the second distance measuring element, the second distance measuring element receives the first distance measuring signal and converts the first distance measuring signal into a second distance measuring signal, the second distance measuring signal is reflected to the first distance measuring element, and the first distance measuring element calculates the distance S0 between the first distance measuring element and the second distance measuring element in the first direction according to the time difference between transmitting the first distance measuring signal and receiving the second distance measuring signal after receiving the second distance measuring signal;

[0014] In some embodiments, the second distance measuring element transmits a first distance measuring signal to the first distance measuring element, the first distance measuring element receives the first distance measuring signal and converts the first distance measuring signal into a second distance measuring signal, the second distance measuring signal is reflected to the second distance measuring element, and the second distance measuring element calculates the distance S0 between the first distance measuring element and the second distance measuring element in the first direction according to the time difference between transmitting the first distance measuring signal and receiving the second distance measuring signal after receiving the second distance measuring signal;

[0015] Or, a calibration structure is arranged between the first ranging element and the second ranging element, the first ranging element is controlled to emit a first ranging signal to the calibration structure, the calibration structure receives the first ranging signal and converts the first ranging signal into a second ranging signal, the second ranging signal is reflected to the first ranging element, the first ranging element calculates a distance d1 between the first ranging element and the calibration structure according to the second ranging signal, the second ranging element is controlled to emit a third ranging signal to the calibration structure, the calibration structure receives the third ranging signal and converts the third ranging signal into a fourth ranging signal, the fourth ranging signal is reflected to the second ranging element, the second ranging element calculates a distance d3 between the second ranging element and the calibration structure according to the fourth ranging signal, a distance S0 between the first ranging element and the second ranging element in a first direction is d1+d2+d3, wherein d3 is a thickness of the calibration structure in the first direction.

[0016] In some embodiments, the method further comprises, before measuring the distance S0 between the first ranging element and the second ranging element in the first direction:

[0017] Calibrating relative positions of the first ranging element and the second ranging element, so that a line between a reference point of the first ranging element and a reference point of the second ranging element is parallel to the first direction.

[0018] In some embodiments, the first direction is a vertically upward direction or a vertically downward direction.

[0019] In some embodiments, the controlling the second ranging element to measure the n mark points A1, A2, …, An on the bonding surface of the first wafer comprises: n respectively, and the distance S0 between the first ranging element and the second ranging element in the first direction. 11 , S 12 , …, S 1n comprises:

[0020] The bonding surface of the first wafer is provided with a second ranging element moving in a first plane perpendicular to the first direction away from the first ranging element, the second ranging element is controlled to move in the first plane to the positioning points P1, P2, …, Pn corresponding to the mark points A1, A2, …, An respectively in sequence, and the second ranging element is controlled to measure the distances S1, S2, …, Sn between the mark points A1, A2, …, An on the bonding surface of the first wafer and the second ranging element in the first direction respectively. n respectively. n n respectively. 11 , S 12 ​, …, S 1n ;

[0021] In some embodiments, the bonding surface of the first wafer is provided with a plurality of the second ranging elements away from one side of the first ranging element, the plurality of the second ranging elements are located on the same plane perpendicular to the first direction, and the plurality of the second ranging elements respectively correspond to the mark points A1, A2, …, A n , respectively, and the plurality of the second ranging elements are controlled to measure the distances between the mark points A1, A2, …, A n , respectively, and the plurality of the second ranging elements in the first direction. 11 , S 12 , …, S 1n .

[0022] In some embodiments, the first bearing structure bearing the first wafer is moved from the idle position to the first position to make the bonding surface of the first wafer face the bonding surface of the second wafer, which includes:

[0023] The first bearing structure bearing the first wafer is moved from the idle position to the first position to make the bonding surface of the first wafer face the bonding surface of the second wafer, and the distance between the bonding surface of the first wafer and the bonding surface of the second wafer in the first direction is less than or equal to 60 μm.

[0024] The application also provides a wafer bonding method, which includes:

[0025] Aligning the first wafer and the second wafer by performing the wafer bonding alignment method as described above;

[0026] Controlling the driving elements connected to the first bearing structure to apply pressure to the bearing surface of the first wafer to move the first wafer to the side close to the second wafer and form a bonding wave to bond the first wafer and the second wafer; and / or, controlling the driving elements connected to the second bearing structure to apply pressure to the bearing surface of the second wafer to move the second wafer to the side close to the first wafer and form a bonding wave to bond the first wafer and the second wafer.

[0027] The application also provides a wafer bonding alignment device, which includes:

[0028] A first bearing structure for bearing a first wafer;

[0029] A second bearing structure for bearing a second wafer;

[0030] Oppositely arranged first and second distance measuring elements for measuring distance;

[0031] A controller connected between the first and second carrier structures and the first and second distance measuring elements for controlling the first and second carrier structures and the first and second distance measuring elements to perform the wafer bonding alignment method as described above.

[0032] In some embodiments, the wafer bonding apparatus further comprises:

[0033] A plurality of adjusting elements arranged on a side of the first carrier structure facing away from the second carrier structure and / or on a side of the second carrier structure facing away from the first carrier structure for controlling movement of at least one of the first and second carrier structures.

[0034] The beneficial effects of the present application include:

[0035] In the process of moving the first and second wafers from the aligned position to the bonding position, the relative distances between the respective mark points on the bonding surface of the first wafer and the corresponding respective mark points on the bonding surface of the second wafer are adjusted according to the actual positions of the bonding surface of the first wafer and the bonding surface of the second wafer obtained by measurement, so that when the first and second wafers are located at the bonding position, the spacings between the respective mark points on the bonding surface of the first wafer and the corresponding respective mark points on the bonding surface of the second wafer are all equal, and the bonding surface of the first wafer and the bonding surface of the second wafer remain parallel. And the actual spacing between the bonding surface of the first wafer and the bonding surface of the second wafer is ensured to be the preset bonding distance, so that the parallelism between the bonding surfaces of the first and second wafers before bonding can be achieved and the accurate bonding distance between the first and second wafers can be ensured.

[0036] Additional aspects and advantages of the present application will be partially given in the following description, which will become apparent from the following description, or will be learned by practice of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0037] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and serve to explain the principles of the present application, together with the description.

[0038] Figure 1 Shown are schematic diagrams of the device structures of the respective steps of the wafer bonding process in the related art;

[0039] Figure 2 Shown is a schematic diagram of the structure for calibrating the motor using a micrometer in the related art;

[0040] Figure 3The diagram shown is a schematic diagram of the equipment structure for each step of the wafer bonding process provided in an exemplary embodiment of this application;

[0041] Figure 4 The diagram shown is a schematic diagram of the equipment structure for each step of the wafer bonding process provided in an exemplary embodiment of this application;

[0042] Figure 5 The diagram shown is a schematic representation of the device structure used in the bonding process after wafer alignment, as provided in an exemplary embodiment of this application.

[0043] Figure 6 The diagram shown is a schematic representation of the device structure used in the bonding process after wafer alignment, as provided in an exemplary embodiment of this application.

[0044] Figure 7 The diagram shown is a schematic representation of the device structure used in the bonding process after wafer alignment, as provided in an exemplary embodiment of this application.

[0045] Figure 8 The diagram shown is a schematic representation of the device structure in a ranging step of a wafer bonding process provided in an exemplary embodiment of this application.

[0046] Figure 9 The diagram shown is a schematic diagram of the device structure in a ranging step of a wafer bonding process provided in an exemplary embodiment of this application.

[0047] In the figure: 100' - upper wafer; 200' - lower wafer; 31' - upper chuck; 32' - upper tray; 41' - lower chuck; 42' - lower tray; 301' - cylinder piston; 302' - calibration lens; 100 - first wafer; 100a - first bonding surface; 100b - first bearing surface; 200 - second wafer; 200a - second bonding surface; 200b - second bearing surface; 30 - first bearing structure; 31 - first chuck; 32 - first tray; 40 - second bearing structure; 41 - second chuck; 42 - second tray; 301(401) - driving element; 302(402) - calibration structure; 50 - position sensor. Detailed Implementation

[0048] In related technologies, such as Figure 1 As shown, the wafer bonding equipment includes an upper lens E1' and a lower lens E2' integrally arranged opposite each other. The equipment also includes an upper tray 32' for supporting the upper wafer 100' and a lower tray 42' for supporting the lower wafer 200'. The upper tray 32' contains an upper chuck 31' for securing the upper wafer 100', and the lower tray 42' contains a lower chuck 41' for securing the lower wafer 200'. Both the upper tray 32' and the lower tray 42' are movable within a plane. The wafer bonding process includes the following steps:

[0049] First step, such as Figure 1 As shown in (a), the upper lens E1' and the lower lens E2' are calibrated relative to each other. If there is a deviation between the upper lens and the lower lens, the deviation distance is recorded. For example, the upper lens E1' and the lower lens E2' can be calibrated by the calibration lens 302' set on the side of the upper tray.

[0050] The second step, as Figure 1 As shown in (b), the lower tray 42' carrying the lower wafer 200' is horizontally moved from an idle position to the marked position of the lower tray 42' within the plane O2'. For example, the marked position of the lower tray 42' can be determined by the position sensor 50'. Then, the integrated upper lens E1' and lower lens E2' are controlled and moved so that the upper lens E1' is aligned with the marked point on the surface of the lower wafer 200', and the positions of the integrated upper lens E1' and lower lens E2' are fixed.

[0051] The third step, as Figure 1 As shown in (c), the lower tray 42' carrying the lower wafer 200' is moved horizontally from the marked position to the idle position in the plane O2', and the upper tray 32' is controlled to move in the plane O1' so that the marked point on the surface of the upper wafer 100' in the upper tray 32' is aligned with the lower lens E2'. If there is a deviation between the upper lens E1' and the lower lens E2', the deviation distance is considered simultaneously so that the upper tray 32' carrying the upper wafer 100' is moved horizontally from the idle position to the marked position of the upper tray 32'.

[0052] Step four, as Figure 1 As shown in (d), the lower tray 42' carrying the lower wafer 200' is moved horizontally from the idle position to the marked position of the lower tray 42' again, at which time the upper wafer 100' and the lower wafer 200' are aligned;

[0053] Fifth step, as Figure 1 As shown in (e), the motors M1', M2', and M3' connected to the lower tray 42' drive the lower tray 42' to move in a direction close to the upper tray 32' until the lower tray 42' moves from the marked position to the bonding position, that is, the lower tray moves from plane O2' to plane O3'.

[0054] Step 6, as follows Figure 1 As shown in (f), the cylinder piston 301' that is in contact with the back of the upper wafer 100' exerts pressure on the upper wafer 100', causing the upper wafer 100' to move downward and form a bonding wave, so that the upper wafer 100' and the lower wafer 200' are bonded together.

[0055] like Figure 2As shown, in related technologies, the parallelism of multiple motors M1', M2', and M3' connected to the lower chuck 41' is typically calibrated by installing a measuring instrument (e.g., a dial indicator) on the upper chuck 31' to ensure that the lower chuck 41' remains parallel after moving from the marked position to the bonding position. Because the installation and fixing of the measuring instrument is relatively cumbersome and troublesome, the number of adjustments is limited; for example, adjustments are only performed during the overall installation of the equipment. However, after multiple drive operations of motors M1', M2', and M3' connected to the lower chuck 41' of the lower wafer 200' in the wafer bonding process, the origin of motors M1', M2', and M3' may shift, causing a deviation in the parallelism between the upper chuck 31' and the lower chuck 41' at the bonding position. This, in turn, causes a deviation in the parallelism between the upper wafer 100' and the lower wafer 200'. Consequently, the upper wafer 100' and the lower wafer 200' cannot maintain parallelism when moving to the bonding position, resulting in wafer bonding failure or poor product performance after bonding. Furthermore, wafers produced in different batches may exhibit variations in thickness. If the thicknesses of the upper wafer 100' and the lower wafer 200' differ from the wafer thickness set by the wafer bonding equipment, it cannot be guaranteed that the upper wafer 100' and the lower wafer 200' will maintain the necessary gap for actual wafer bonding when moving to the bonding position set by the equipment. This may result in the wafers failing to bond successfully under the action of the bonding wave, leading to wafer slippage and bonding failure. Moreover, if the bonding surface and the bearing surface of the wafer are not perfectly parallel, and the bonding surface has a certain tilt relative to the bearing surface, even if the upper and lower chucks are relatively parallel, the parallelism between the bonding surfaces of the upper and lower wafers cannot be guaranteed. Therefore, in related technologies, deviations in the parallelism between the upper and lower chucks caused by motor origin deviation, as well as deviations in thickness uniformity between different batches of wafers, can both lead to bonding failures between the upper and lower wafers.

[0056] The wafer bonding alignment method, wafer bonding method and wafer bonding alignment equipment provided in this application are intended to solve the above-mentioned technical problems in related technologies.

[0057] The wafer bonding alignment method, wafer bonding method, and wafer bonding alignment apparatus in the embodiments of this application will be described in detail below with reference to the accompanying drawings. Unless otherwise specified, the features in the following embodiments may complement or combine with each other.

[0058] This application provides a wafer bonding alignment method, such as... Figure 3 or Figure 4 As shown, it includes the following steps:

[0059] Step 100: As Figure 3 (a) or Figure 4measuring a distance S0 between the first distance measuring element E1 and the second distance measuring element E2 in the first direction, the first direction being a direction in which the first distance measuring element E1 points to the second distance measuring element E2;

[0060] Step 200: as shown in Figure 3 Step 200: as shown in Figure 4 controlling the first carrier structure 30 carrying the first wafer 100 to move to a first position between the first distance measuring element E1 and the second distance measuring element E2, the bonding surface of the first wafer 100 facing the second distance measuring element E2; and controlling the second distance measuring element E2 to measure distances S 11 , S 12 and S 13 between the three first mark points A1, A2 and A3 on the bonding surface of the first wafer 100 and the second distance measuring element E2 in the first direction respectively, the mark points A1, A2 and A3 not being collinear;

[0061] Step 300: as shown in Figure 3 Step 300: as shown in Figure 4 controlling the first carrier structure 30 carrying the first wafer 100 to move from the first position to an idle position, the idle position and the first position being located in a same plane perpendicular to the first direction; controlling the second carrier structure 40 carrying the second wafer 200 to move to a second position opposite to the first position, the distance between the second position and the first distance measuring element E1 in the first direction being greater than the distance between the first position and the first distance measuring element E1, the bonding surface of the second wafer 200 facing the first distance measuring element E1; and controlling the first distance measuring element E1 to measure distances S 21 , S 22 and S 23 between the three second mark points B1, B2 and B3 on the bonding surface of the second wafer 200 and the first distance measuring element E1 in the first direction respectively, the mark points B1, B2 and B3 not being collinear; wherein each second mark point B i corresponds to a first mark point A i , i being selected from 1, 2 and 3;

[0062] Step 400: as shown in Figure 3 Step 400: as shown in Figure 4 controlling the first carrier structure 30 carrying the first wafer 100 to move from the idle position to the first position, the bonding surface of the first wafer 100 facing the bonding surface of the second wafer 200; wherein a line connecting the first mark point A1 and the corresponding second mark point B1 is parallel to the first direction, a line connecting the first mark point A2 and the corresponding second mark point B2 is parallel to the first direction, and a line connecting the first mark point A3 and the corresponding second mark point B3 is parallel to the first direction;

[0063] Step 500: As shown in Figure 3 Step 500: As shown in Figure 4 Step 500: As shown in i Step 500: As shown in i Step 500: As shown in 1i Step 500: As shown in 2i Step 500: As shown in t Step 500: As shown in t S0 is a preset distance between the bonding surface of the first wafer 100 and the bonding surface of the second wafer 200 before bonding.

[0064] In the wafer bonding alignment process, the distance between the first wafer 100 and the second wafer 200 is small, so in this embodiment, the positions of the first distance measuring element E1 and the second distance measuring element E2 arranged oppositely are used as references, the distances between the positions of at least three non-collinear mark points on the second wafer 200, at least three non-collinear mark points on the first wafer 100 and the reference positions (the first distance measuring element E1 or the second distance measuring element E2) are measured by the first distance measuring element E1 and the second distance measuring element E2 respectively, so as to measure the actual positions of the bonding surface of the first wafer 100 and the bonding surface of the second wafer 200. In the process of moving the first wafer 100 and the second wafer 200 from the aligned position to the bonding position, according to the actual positions of the bonding surface of the first wafer 100 and the bonding surface of the second wafer 200 measured, the relative distances between each mark point on the bonding surface of the first wafer 100 and the corresponding each mark point on the bonding surface of the second wafer 200 are adjusted, so that when the first wafer 100 and the second wafer 200 are located at the bonding position, the distances between each mark point on the bonding surface of the first wafer 100 and the corresponding each mark point on the bonding surface of the second wafer 200 are all equal to S t , the bonding surface of the first wafer 100 and the bonding surface of the second wafer 200 remain parallel. And the actual distance between the bonding surface of the first wafer 100 and the bonding surface of the second wafer 200 is ensured to be the preset bonding distance S t , so that the parallelism between the bonding surfaces of the first wafer 100 and the second wafer 200 before bonding and the accurate bonding distance between the first wafer 100 and the second wafer 200 can be ensured.

[0065] In some embodiments, before step 500, in steps 100-400, the first carrier structure 30 moves in the first plane O1, and the second carrier structure 40 moves in the second plane O2, to avoid the positional deviation of the first carrier structure 30 and the second carrier structure 40 in the first direction, which affects the distance of the relative movement between the first wafer 100 and the second wafer 200. In step 500, after the first wafer 100 and the second wafer 200 are moved towards each other, the plane in which the first carrier structure 30 is located becomes the third plane O3, and the plane in which the second carrier structure 40 is located becomes the fourth plane O4. The bonding surface of the first wafer 100 carried by the first carrier structure 30 located in the third plane O3 is parallel to the bonding surface of the second wafer 200 carried by the second carrier structure 40 located in the fourth plane O4.

[0066] It should be noted that, for ease of understanding, the present embodiment takes the example of the bonding surface of the first wafer 100 being provided with three first mark points, namely first mark points A1, A2 and A3, and the bonding surface of the second wafer 200 being provided with three second mark points, namely second mark points B1, B2 and B3. It can be understood that the number of first mark points on the bonding surface of the first wafer 100 and the number of second mark points on the bonding surface of the second wafer 200 can both be greater than 3, such as 4, 5, 6, etc. positive integers, which also belong to the protection scope of the present application.

[0067] As shown in (a) of Figure 3 or (a) of Figure 4 The first wafer 100 of the present application has a first bonding surface 100a and a first bearing surface 100b arranged oppositely, and the second wafer 200 has a second bonding surface 200a and a second bearing surface 200b arranged oppositely, wherein the first bonding surface 100a is the side surface of the first wafer 100 facing away from the first carrier structure 30, and the first bearing surface 100b is the side surface of the first wafer 100 facing towards the first carrier structure 30. The second bonding surface 200a is the side surface of the second wafer 200 facing away from the first carrier structure 30, and the second bearing surface 200b is the side surface of the second wafer 200 facing towards the first carrier structure 30.

[0068] In some embodiments, each step in the wafer bonding method of the present application can be realized by controlling the first carrier structure 30 and the second carrier structure 40 to move through a controller. As shown in Figure 3 or Figure 4As shown, the first bearing structure 30 comprises a first chuck 31 for clamping and fixing the position of the first wafer 100, and a first tray 32 for bearing the first chuck 31, the first tray 32 being connected with the controller. In other embodiments, the first bearing structure 30 comprises a first chuck 31 for clamping and fixing the position of the first wafer 100, the first chuck 31 being connected with the controller.

[0069] In some embodiments, as shown in Figure 3 or Figure 4 As shown, the second bearing structure 40 comprises a second chuck 41 for clamping and fixing the position of the second wafer 200, and a second tray 42 for bearing the second chuck 41, the second tray 42 being connected with the controller. In other embodiments, the second bearing structure 40 comprises a second chuck 41 for clamping and fixing the position of the second wafer 200, the second chuck 41 being connected with the controller.

[0070] In some embodiments, as shown in Figure 3 As shown, the side of the first bearing structure 30 is provided with a calibration structure 302. In other embodiments, as shown in Figure 4 As shown, the side of the second bearing structure 40 is provided with a calibration structure 402. When the first distance measuring element E1 and the second distance measuring element E2 are oppositely arranged, the first calibration distance measuring signal emitted by the first distance measuring element E1 and the second calibration distance measuring signal emitted by the second distance measuring element E2 are respectively emitted from opposite sides of the calibration structure, so that the first calibration distance measuring signal and the second calibration distance measuring signal are opposite and coincident to calibrate the relative position between the first distance measuring element E1 and the second distance measuring element E2.

[0071] In some embodiments, as shown in Figure 3 or Figure 4 As shown, one side of the second bearing structure 40 in the present application is also provided with a position sensor 50 for identifying the position of the second bearing structure 40. In other embodiments, one side of the first bearing structure 30 in the present application is also provided with a position sensor 50 for identifying the position of the first bearing structure 30 (not shown in the figure). Of course, in other embodiments, the side of both the first bearing structure 30 and the second bearing structure 40 can be provided with corresponding position sensors.

[0072] In some embodiments, as shown in Figure 3 As shown, when the first direction is vertically downward, the direction in which the first distance measuring element E1 points to the second distance measuring element E2 is vertically downward, and when the first wafer 100 and the second wafer 200 are oppositely arranged, the direction in which the first wafer 100 points to the second wafer 200 is vertically downward.

[0073] In some embodiments, as shown in Figure 4As shown, the first direction is vertically upward, and the direction in which the first distance measuring element E1 points to the second distance measuring element E2 is vertically upward. In the case where the first wafer 100 and the second wafer 200 are oppositely arranged, the direction in which the first wafer 100 points to the second wafer 200 is vertically upward.

[0074] In some embodiments, as Figure 5 shown, the first bearing structure 30 is connected with three first adjusting elements M Figure 3 i on the side away from the first wafer 100. 11 、M 12 and M 13 , the line between the first adjusting element M 1i and the first mark point A i is parallel to the first direction, and i is selected from 1, 2 and 3; and the step 500 of controlling at least one of the first bearing structure 30 and the second bearing structure 40 to move so that the first wafer 100 and the second wafer 200 move towards each other comprises: controlling the first adjusting elements M 11 、M 12 and M 13 to move so that the first wafer 100 moves towards the direction close to the second wafer 200.

[0075] In the present embodiment, only the side of the first bearing structure 30 away from the first wafer 100 is connected with multiple first adjusting elements, and at this time, the second wafer 200 carried by the second bearing structure 40 remains in the original position. The distance that the first adjusting element M 11 moves is S 11 +S 21 -S0-S t , the distance that the first adjusting element M 12 moves is S 12 +S 22 -S0-S t , and the distance that the first adjusting element M 13 moves is S 13 +S 23 -S0-S t . In the present embodiment, each first adjusting element M 11 、M 12 and M 13 moves a corresponding distance according to the actual distance between each mark point, so that the distance between each mark point on the bonding surface of the first wafer 100 and the corresponding mark point on the bonding surface of the second wafer 200 is equal to S t , and further makes the bonding surface of the first wafer 100 and the bonding surface of the second wafer 200 remain parallel and at a preset bonding distance.

[0076] In some embodiments, asFigure 6 As shown, with Figure 3 Based on the middle (e), three second adjustment elements M are connected to the side of the second support structure 40 away from the second wafer 200. 21 M 22 and M 23 The second adjusting element M 2i With the second marker point B i The line connecting them is parallel to the first direction, and i is selected from 1, 2, and 3; in step 500, controlling the movement of at least one of the first support structure 30 and the second support structure 40, so that the first wafer 100 and the second wafer 200 move toward each other, includes controlling the second adjustment element M. 21 M 22 and M 23 The movement causes the second wafer 200 to move toward the direction of the first wafer 100.

[0077] In this embodiment, multiple second adjustment elements are connected only on the side of the second support structure 40 away from the second wafer 200. In this case, the first wafer 100 supported by the first support structure 30 remains in its original position, and the second adjustment element M is controlled. 21 The distance moved is S 11 +S 21 -S0-S t Control the second regulating element M 22 The distance moved is S 12 +S 22 -S0-S t Control the second regulating element M 23 The distance moved is S 13 +S 23 -S0-S t This embodiment controls each of the second adjustment elements M separately. 21 M 22 and M 23 The markers are moved a corresponding distance according to the actual spacing between them, so that the spacing between each marker on the bonding surface of the first wafer 100 and the corresponding marker on the bonding surface of the second wafer 200 is equal and both are S. t This further ensures that the bonding surfaces of the first wafer 100 and the second wafer 200 remain parallel and at a preset bonding distance.

[0078] In some embodiments, such as Figure 7 As shown, with Figure 3 Based on the first support structure 30, three first adjustment elements M are connected to the side of the first support structure 30 away from the first wafer 100. 11 M 12 and M 13 The first adjusting element M 1iWith the first marker point A i The connecting lines are parallel to the first direction, and i is selected from 1, 2, and 3; three second adjustment elements M are connected to the side of the second support structure 40 away from the second wafer 200. 21 M 22 and M 23 The second adjusting element M 2i With the second marker point B i The line connecting them is parallel to the first direction, and i is selected from 1, 2, and 3; in step 500, controlling the movement of at least one of the first support structure 30 and the second support structure 40, so that the first wafer 100 and the second wafer 200 move toward each other, includes controlling the first adjusting element M. 11 M 12 and M 13 Second adjustment element M 21 M 22 and M 23 The movement causes the first wafer 100 to move toward the direction of the second wafer 200.

[0079] In this embodiment, multiple first adjustment elements can be connected to the side of the first support structure 30 away from the first wafer 100, and multiple second adjustment elements can be connected to the side of the second support structure 40 away from the second wafer 200. The first and second adjustment elements can be controlled to move in opposite directions or in the same direction. When each first adjustment element and each second adjustment element moves in the same direction, the first adjustment element M is controlled... 11 Second adjustment element M 21 The difference in distance moved is S 11 +S 21 -S0-S t Control the first regulating element M 12 Second adjustment element M 22 The difference in distance moved is S 12 +S 22 -S0-S t Control the first regulating element M 13 Second adjustment element M 23 The difference in distance moved is S 13 +S 23 -S0-S t When the first adjusting elements and the second adjusting elements move towards each other, the control of the first adjusting element M is... 11 Second adjustment element M 21 The sum of the distances moved is S. 11 +S 21 -S0-S t Control the first regulating element M 12 Second adjustment element M 22 The sum of the distances moved is S.12 +S 22 -S0-S t controlling the first adjusting element M 13 and the second adjusting element M 23 to move a distance sum of S 13 +S 23 -S0-S t .

[0080] In some embodiments, the step 100 of measuring the interval S0 between the first distance measuring element E1 and the second distance measuring element E2 arranged in relative interval in the first direction comprises:

[0081] controlling the first distance measuring element E1 to emit a first distance measuring signal to the second distance measuring element E2, the second distance measuring element E2 receiving the first distance measuring signal and converting the first distance measuring signal into a second distance measuring signal, the second distance measuring signal reflecting to the first distance measuring element E1, the first distance measuring element E1 receiving the second distance measuring signal and calculating the interval S0 between the first distance measuring element E1 and the second distance measuring element E2 in the first direction according to the time difference between emitting the first distance measuring signal and receiving the second distance measuring signal.

[0082] In the embodiment, the first distance measuring element E1 can be used as the distance measuring structure itself, without additional distance measuring structure, so that the overall device can be simplified, and the measuring method is relatively simple due to the relative arrangement between the first distance measuring element E1 and the second distance measuring element E2, so that the efficiency of wafer bonding process can be improved.

[0083] In some embodiments, the first distance measuring element E1 comprises any one of a laser distance measuring instrument, an infrared distance measuring instrument, a camera distance measuring instrument or an ultrasonic distance measuring instrument. Then the first distance measuring signal and the second distance measuring signal can be optical signals, infrared signals, image signals or ultrasonic signals.

[0084] In some embodiments, the step 100 of measuring the interval S0 between the first distance measuring element E1 and the second distance measuring element E2 arranged in relative interval in the first direction comprises:

[0085] controlling the second distance measuring element E2 to emit a first distance measuring signal to the first distance measuring element E1, the first distance measuring element E1 receiving the first distance measuring signal and converting the first distance measuring signal into a second distance measuring signal, the second distance measuring signal reflecting to the second distance measuring element E2, the second distance measuring element E2 receiving the second distance measuring signal and calculating the interval S0 between the first distance measuring element E1 and the second distance measuring element E2 in the first direction according to the time difference between emitting the first distance measuring signal and receiving the second distance measuring signal.

[0086] In this embodiment, the second ranging element E2 itself can be used as the structure for measuring distance, eliminating the need for a separate structure for measuring distance. This simplifies the overall equipment. Furthermore, since the first ranging element E1 and the second ranging element E2 are arranged relative to each other, the measurement method is relatively simple, which can improve the efficiency of the wafer bonding process.

[0087] In some embodiments, the second ranging element E2 includes any one of a laser rangefinder, an infrared rangefinder, a camera rangefinder, or an ultrasonic rangefinder. The first ranging signal and the second ranging signal can then be optical signals, infrared signals, image signals, or ultrasonic signals.

[0088] In some embodiments, such as Figure 3 As described in (a), the distance S0 between the first ranging element E1 and the second ranging element E2, which are set at a relative interval, in the first direction in step 100 includes:

[0089] A calibration structure 302 is provided between the first ranging element E1 and the second ranging element E2. The first ranging element E1 is controlled to transmit a first ranging signal to the calibration structure 302. The calibration structure 302 receives the first ranging signal and converts it into a second ranging signal. The second ranging signal is reflected back to the first ranging element E1. The first ranging element E1 calculates the distance d1 between the first ranging element E1 and the calibration structure 302 based on the second ranging signal. The second ranging element E2 is controlled to transmit a third ranging signal to the calibration structure 302. The calibration structure 302 receives the third ranging signal and converts it into a fourth ranging signal. The fourth ranging signal is reflected back to the second ranging element E2. The second ranging element E2 calculates the distance d3 between the second ranging element E2 and the calibration structure 302 based on the fourth ranging signal. The distance S0 between the first ranging element E1 and the second ranging element E2 in the first direction is S0 = d1 + d2 + d3, where d3 is the thickness of the calibration structure 302 in the first direction.

[0090] In some embodiments, before measuring the distance S0 between the first ranging element E1 and the second ranging element E2, which are set at a relative interval, in the first direction, the method further includes:

[0091] The relative positions of the first ranging element E1 and the second ranging element E2 are calibrated so that the line connecting the reference point of the first ranging element E1 and the reference point of the second ranging element E2 is parallel to the first direction.

[0092] In this embodiment, the relative positions between the first ranging element E1 and the second ranging element E2 can be calibrated so that when measuring each first marker point on the bonding surface of the first wafer 100 and each second marker point on the bonding surface of the second wafer 200, the lines connecting each first marker point and each second marker point are parallel to the first direction.

[0093] In some embodiments, the calibration structure is made of a light-transmitting material. The calibration structure has calibration marks on two opposing surfaces perpendicular to the first direction. Both the first and second ranging elements have imaging capabilities. Calibrating the relative position of the first ranging element E1 and the second ranging element E2 includes: controlling the first ranging element to capture a first image of the calibration marks; controlling the second ranging element to capture a second image of the calibration marks; recording the positions of the calibration marks in the first and second images; if the positions of the calibration marks in the first and second images coincide, then it is recorded that the first and second ranging elements are perfectly aligned; if the positions of the calibration marks in the first and second images do not coincide and have a deviation, then the deviation angle and distance are recorded, thus achieving calibration. It should be noted that the first ranging element E1 and the second ranging element E2 do not need to be perfectly aligned. If the first ranging element E1 and the second ranging element E2 are not perfectly aligned, the deviation is recorded and taken into account in subsequent measurements. The lines connecting each first mark point on the bonding surface of the first wafer 100 and each second mark point on the bonding surface of the second wafer 200 are parallel to the first direction.

[0094] In some embodiments, in step 200, the second ranging element E2 is controlled to measure the distance S between the second ranging element E2 and three marker points A1, A2, and A3 on the bonding surface of the first wafer 100 in a first direction, respectively. 11 S 12 and S 13 include:

[0095] like Figure 3 (b) or Figure 4 As shown in (b), a second ranging element E2 is provided on the side of the bonding surface of the first wafer 100 away from the first ranging element E1, which moves along a first plane perpendicular to the first direction. The second ranging element E2 is controlled to move sequentially within the first plane to the marking points A1, A2, ..., A1. n The corresponding positioning points P1, P2, and P3 are used to control the second ranging element E2 to measure the distance S between the marking points A1, A2, and A3 on the bonding surface of the first wafer 100 and the second ranging element E2 in the first direction. 11 S 12 and S 13 .

[0096] In some embodiments, similar to the above embodiments, in step 300, the first ranging element E1 is controlled to measure the distance S between the three second marker points B1, B2, and B3 on the bonding surface of the second wafer 200 and the first ranging element E1 in the first direction. 21 S 22and S 23 include:

[0097] like Figure 3 (c) or Figure 4 As shown in (c), a first ranging element E1 is provided on the side of the bonding surface of the second wafer 200 away from the second ranging element E2, which moves along a first plane perpendicular to the first direction. The first ranging element E1 is controlled to move sequentially in the first plane to positioning points Q1, Q2, and Q3 corresponding to the marking points B1, B2, and B3, respectively. The first ranging element E1 is also controlled to measure the distance S between the marking points B1, B2, and B3 on the bonding surface of the first wafer 100 and the second ranging element E2 in the first direction. 21 S 22 and S 23 .

[0098] In some embodiments, the first ranging element E1 and the second ranging element E2 are integrally disposed opposite to each other, and the relative positions of the first ranging element E1 and the second ranging element E2 are fixed to each other.

[0099] In some embodiments, in step 200, the second ranging element E2 is controlled to measure the distance S between the second ranging element E2 and three marker points A1, A2, and A3 on the bonding surface of the first wafer 100 in a first direction, respectively. 11 S 12 and S 13 include:

[0100] by Figure 3 Based on (b), such as Figure 8 As shown, three second ranging elements E1 are provided on the side of the bonding surface of the first wafer 100 away from the first ranging element E1. 21 E 22 and E 23 Multiple second ranging elements E 21 E 22 and E 23 Multiple second ranging elements E are located on the same plane perpendicular to the first direction. 21 E 22 and E 23 Corresponding to markers A1, A2, and A3 respectively, the second ranging element E is controlled. 21 E 22 and E 23 The markings A1, A2, and A3 on the bonding surface of the first wafer 100 are measured respectively with respect to the second ranging element E. 21 E 22 and E 23 The spacing S between them in the first direction 11 S 12 and S 13 .

[0101] In some embodiments, similar to the above embodiments, in step 300, the first ranging element E1 is controlled to measure the distance S between the three second marker points B1, B2, and B3 on the bonding surface of the second wafer 200 and the first ranging element E1 in the first direction. 21 S 22 and S 23 include:

[0102] by Figure 3 Based on (c), such as Figure 9 As shown, three first ranging elements E are provided on the side of the bonding surface of the first wafer 100 away from the second ranging element E2. 11 E 12 and E 13 Multiple first ranging elements E 11 E 12 and E 13 Located on the same plane perpendicular to the first direction, multiple first ranging elements E 11 E 12 and E 13 Corresponding to markers B1, B2, and B3 respectively, the first ranging element E is controlled. 11 E 12 and E 13 The markings B1, B2, and B3 on the bonding surface of the second wafer 200 are measured respectively with respect to the first ranging element E. 11 E 12 and E 13 The spacing S between them in the first direction 21 S 22 and S 23 .

[0103] As can be seen from the above embodiments, in this application, the distance between multiple marker points and the bonding surface of the wafer can be measured sequentially in the same plane by a single ranging element, or the distance between multiple marker points and the bonding surface of the wafer can be measured separately by multiple ranging elements located in the same plane, which is a more flexible design.

[0104] In some embodiments, the first ranging element E 11 E 12 and E 13 With the second ranging element E 21 E 22 and E 23 Integrated relative setup, first ranging element E 11 E 12 and E 13 Second ranging element E 21 E 22 and E 23The relative positions of the first wafer 100 and the second wafer 200 are fixed.

[0105] In some embodiments, the step of moving the first carrier structure 30 carrying the first wafer 100 from the idle position to the first position so that the bonding surface of the first wafer 100 faces the bonding surface of the second wafer 200 in step 400 includes:

[0106] The step of moving the first carrier structure 30 carrying the first wafer 100 from the idle position to the first position so that the bonding surface of the first wafer 100 faces the bonding surface of the second wafer 200 includes:

[0107] In the present embodiment, the distance between the bonding surface of the first wafer 100 and the bonding surface of the second wafer 200 is small when the first wafer 100 and the second wafer 200 are aligned, so it is inconvenient to directly measure the distance between each point on the bonding surface of the first wafer 100 and the bonding surface of the second wafer 200. Therefore, the present application indirectly measures the distance between each mark point on the bonding surface of the first wafer 100 and each mark point on the bonding surface of the second wafer 200 by first measuring the distance between the first distance measuring element and the bonding surface of the second wafer 200 and then measuring the distance between the second distance measuring element and the bonding surface of the first wafer 100, which is a simple and feasible measurement method.

[0108] In some embodiments, the distance between the bonding surface of the first wafer 100 and the bonding surface of the second wafer 200 in the first direction can be 60 μm, 50 μm, 40 μm, 30 μm, 20 μm, or 10 μm.

[0109] Based on the same inventive concept, the present application also provides a wafer bonding method, including the following steps:

[0110] As shown in (a) to (e) of the foregoing wafer bonding alignment method, the first wafer 100 and the second wafer 200 are aligned; Figure 3 As shown in (a) to (e) of the foregoing wafer bonding alignment method, the first wafer 100 and the second wafer 200 are aligned; Figure 4 As shown in (a) to (e) of the foregoing wafer bonding alignment method, the first wafer 100 and the second wafer 200 are aligned;

[0111] Figure 3 As shown in (f) of the foregoing wafer bonding method, the driving element 301 connected to the first carrier structure 30 is controlled to apply pressure to the bearing surface of the first wafer 100 to move the first wafer 100 towards the second wafer 200 and form a bonding wave, so that the first wafer 100 and the second wafer 200 are bonded.

[0112] Based on the same inventive concept, the present application also provides another wafer bonding method, including the following steps:

[0113] As shown in (a) to (e) of the foregoing wafer bonding alignment method, the first wafer 100 and the second wafer 200 are aligned; Figure 4 ​As shown in (a) to (e), the first wafer 100 and the second wafer 200 are aligned using the wafer bonding alignment method described above;

[0114] like Figure 4 As shown in (f), the driving element 401 connected to the second bearing structure 40 applies pressure to the bearing surface of the second wafer 200, causing the second wafer 200 to move towards the side closer to the first wafer 100 to form a bonding wave, thereby bonding the first wafer 100 and the second wafer 200.

[0115] Based on the same inventive concept, this application also provides a wafer bonding alignment device, including a first support structure 30, a second support structure 40, and a first ranging element E1 and a second ranging element E2 disposed opposite to each other, and a controller, wherein: the first support structure 30 is used to support a first wafer 100; the second support structure 40 is used to support a second wafer 200; the first ranging element E1 and the second ranging element E2 disposed opposite to each other are used to measure distance; the controller is connected to the first support structure 30, the second support structure 40, the first ranging element E1 and the second ranging element E2, and is used to control the first support structure 30, the second support structure 40, the first ranging element E1 and the second ranging element E2 to perform the wafer bonding alignment method as described above.

[0116] In some embodiments, the wafer bonding apparatus further includes a plurality of adjustment elements that can be connected to at least one of the first support structure 30 and the second support structure 40 for controlling the movement of at least one of the first support structure 30 and the second support structure 40.

[0117] Multiple adjustment elements can be set on the side of the connected load-bearing structure that is away from the other load-bearing structure.

[0118] In some examples, such as Figure 5 As shown, the wafer bonding equipment includes multiple first adjustment elements M 11 M 12 and M 13 It is located on the side of the first bearing structure 30 away from the second bearing structure 40, and is used to control the movement of the first bearing structure 30.

[0119] In other examples, such as Figure 6 As shown, the wafer bonding equipment includes multiple second adjustment elements M 21 M 22 and M 23 It is located on the side of the second support structure 40 away from the first support structure 30, and is used to control the movement of the second support structure 40.

[0120] In some other examples, such as Figure 7 As shown, the wafer bonding equipment includes multiple first adjustment elements M 11, M 12 and M 13 and a plurality of second adjustment elements M 21 , M 22 and M 23 , the first adjustment elements M 11 , M 12 and M 13 are arranged on the side of the first carrier structure 30 facing away from the second carrier structure 40 for controlling the movement of the first carrier structure 30; the second adjustment elements M 21 , M 22 and M 23 are arranged on the side of the second carrier structure 40 facing away from the first carrier structure 30 for controlling the movement of the second carrier structure 40.

[0121] In some embodiments, the adjustment elements are motors.

[0122] It should be noted that the terms "first", "second" are used only for descriptive purposes and should not be construed as indicating or implying relative importance or an indicated number of technical features. Thus, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise stated.

Claims

1. A method of wafer bonding alignment, the method comprising: Comprising: measuring a distance S0 between a first distance measuring element and a second distance measuring element located vertically downward of the first distance measuring element in a first direction, the first direction being a direction in which the first distance measuring element points to the second distance measuring element located vertically downward of the first distance measuring element; controlling a first carrier structure carrying a first wafer to move to a first position between the first distance measuring element and the second distance measuring element, a bonding surface of the first wafer facing the second distance measuring element; and controlling the second distance measuring element to measure n first mark points A1, A2, …, A n respectively, in the first direction between the second distance measuring element 11 , S 12 , …, S 1n , at least three of the mark points A1, A2, …, A n are not collinear; n is a positive integer greater than or equal to 3; controlling the first carrier structure carrying the first wafer to move from the first position to an idle position; the idle position and the first position are located in a same plane perpendicular to the first direction; and a second carrier structure carrying a second wafer is moved to a second position opposite to the first position, in the first direction, the distance between the second position and the first distance measuring element is greater than the distance between the first position and the first distance measuring element, the bonding surface of the second wafer faces the first distance measuring element; and the first distance measuring element measures n second mark points B1, B2, …, Bn on the bonding surface of the second wafer. n The distances S1, S2, …, Sn between the first distance measuring element and the mark points B1, B2, …, Bn in the first direction are respectively 21 S1 22 , S2 2n , …, Sn n . At least three of the mark points B1, B2, …, Bn are not collinear; wherein each second mark point B i corresponds to a first mark point A i , i is selected from 1 to n. controlling the first carrier structure carrying the first wafer to move from the idle position to the first position, so that a bonding surface of the first wafer faces a bonding surface of the second wafer; wherein a line connecting each first mark point A i and a corresponding second mark point B i is parallel to the first direction; controlling at least one of the first bearing structure and the second bearing structure to move, so that the first wafer and the second wafer move towards each other, to make each first mark point A i and the corresponding second mark point B i move towards each other by a distance of S 1i +S 2i -S0-S t , i is selected from 1 to n, S t is a preset interval between the first wafer and the second wafer before bonding. Specifically, the control of the second ranging element measures n marker points A1, A2, ..., A on the bonding surface of the first wafer. n The distance S between each of the second ranging element and the first ranging element in the first direction 11 S 12 ... S 1n include: The bonding surface of the first wafer is provided with a second distance measuring element moving in a first plane perpendicular to the first direction away from one side of the first distance measuring element, and the second distance measuring element is controlled to move in the first plane to the mark points A1, A2, …, A n respectively corresponding positioning points P1, P2, …, P n And control the second distance measuring element to measure the mark points A1, A2, …, A n respectively on the bonding surface of the first wafer 11 , S 12 , …, S 1n in the first direction between the second distance measuring element respectively Or, the bonding surface of the first wafer is provided with a plurality of second ranging elements away from one side of the first ranging element, the plurality of second ranging elements are located on the same plane perpendicular to the first direction, and the plurality of second ranging elements are respectively corresponding to the mark points A1, A2, …, A n respectively, control a plurality of second ranging elements to measure mark points A1, A2, …, A n respectively on the bonding surface of the first wafer 11 , S 12 , …, S 1n .

2. The wafer bonding alignment method of claim 1, wherein, The first bearing structure is connected with n first adjusting elements M on the side away from the first wafer 11 , M 12 , …, M 1n , the line between the first adjusting element M 1i and the first mark point A i is parallel to the first direction, i is selected from 1-n, and n is a positive integer greater than or equal to 3; The control of the movement of at least one of the first supporting structure and the second supporting structure so that the first wafer and the second wafer move towards each other includes: controlling the movement of the first adjusting element M 11 , M 12 , …, M 1n so that the first wafer moves towards the direction close to the second wafer. And / or, the second bearing structure is connected with n second adjusting elements M away from one side of the second wafer 21 , M 22 , …, M 2n , the second adjusting element M 2i Between the line and the second mark point B i Parallel to the first direction, i is selected from 1~n, n is a positive integer greater than or equal to 3;The control at least one of the first bearing structure and the second bearing structure moves, so that the first wafer and the second wafer move towards each other, including: control the second adjusting element M 21 , M 22 , …, M 2n Move, so that the second wafer moves towards the direction close to the first wafer.

3. The wafer bonding alignment method of claim 1, wherein, the measuring a distance S0 between a first distance measuring element and a second distance measuring element located vertically downward of the first distance measuring element in a first direction comprises: controlling the first distance measuring element to emit a first distance measuring signal to the second distance measuring element, the second distance measuring element receiving the first distance measuring signal and converting the first distance measuring signal into a second distance measuring signal, the second distance measuring signal reflecting to the first distance measuring element, the first distance measuring element receiving the second distance measuring signal and calculating the distance S0 between the first distance measuring element and the second distance measuring element in the first direction according to a time difference between emitting the first distance measuring signal and receiving the second distance measuring signal; or, controlling the second distance measuring element to emit a first distance measuring signal to the first distance measuring element, the first distance measuring element receiving the first distance measuring signal and converting the first distance measuring signal into a second distance measuring signal, the second distance measuring signal reflecting to the second distance measuring element, the second distance measuring element receiving the second distance measuring signal and calculating the distance S0 between the first distance measuring element and the second distance measuring element in the first direction according to a time difference between emitting the first distance measuring signal and receiving the second distance measuring signal; or, a calibration structure is provided between the first distance measuring element and the second distance measuring element, controlling the first distance measuring element to emit a first distance measuring signal to the calibration structure, the calibration structure receiving the first distance measuring signal and converting the first distance measuring signal into a second distance measuring signal, the second distance measuring signal reflecting to the first distance measuring element, the first distance measuring element calculating a distance d1 between the first distance measuring element and the calibration structure according to the second distance measuring signal, controlling the second distance measuring element to emit a third distance measuring signal to the calibration structure, the calibration structure receiving the third distance measuring signal and converting the third distance measuring signal into a fourth distance measuring signal, the fourth distance measuring signal reflecting to the second distance measuring element, the second distance measuring element calculating a distance d3 between the second distance measuring element and the calibration structure according to the fourth distance measuring signal, the distance S0 between the first distance measuring element and the second distance measuring element in the first direction being S0 = d1 + d2 + d3, wherein d3 is a thickness of the calibration structure in the first direction.

4. The wafer bonding alignment method of claim 3, wherein, the measuring a distance S0 between a first distance measuring element and a second distance measuring element located vertically downward of the first distance measuring element in a first direction further comprises: The relative positions of the first distance measuring element and the second distance measuring element are calibrated so that a line between a reference point of the first distance measuring element and a reference point of the second distance measuring element is parallel to the first direction.

5. The wafer bonding alignment method of claim 1, wherein, The first direction is a vertically upward direction or a vertically downward direction.

6. The wafer bonding alignment method of claim 1, wherein, The control of the movement of the first carrier structure carrying the first wafer from the idle position to the first position so that the bonding surface of the first wafer faces the bonding surface of the second wafer includes: The control of the movement of the first carrier structure carrying the first wafer from the idle position to the first position so that the bonding surface of the first wafer faces the bonding surface of the second wafer, and the distance between the bonding surface of the first wafer and the bonding surface of the second wafer in the first direction is less than or equal to 60 μm.

7. A wafer bonding method characterized by, The wafer bonding method includes: The wafer bonding alignment method according to any one of claims 1-6 is performed to align the first wafer and the second wafer; The control of the driving element connected to the first carrier structure to apply pressure to the bearing surface of the first wafer so that the first wafer moves towards the side close to the second wafer and forms a bonding wave to bond the first wafer and the second wafer; and / or, the control of the driving element connected to the second carrier structure to apply pressure to the bearing surface of the second wafer so that the second wafer moves towards the side close to the first wafer and forms a bonding wave to bond the first wafer and the second wafer.

8. A wafer bonding alignment apparatus, characterized by, It includes: A first carrier structure for carrying a first wafer; A second carrier structure for carrying a second wafer; First and second distance measuring elements arranged oppositely for measuring distance; A controller connected between the first carrier structure, the second carrier structure, the first distance measuring element and the second distance measuring element for controlling the first carrier structure, the second carrier structure, the first distance measuring element and the second distance measuring element to perform the wafer bonding alignment method according to any one of claims 1-7.

9. The wafer bonding alignment apparatus of claim 8, wherein, The wafer bonding device further includes: A plurality of adjusting elements arranged on the side of the first carrier structure away from the second carrier structure and / or arranged on the side of the second carrier structure away from the first carrier structure for controlling the movement of at least one of the first carrier structure and the second carrier structure.

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