PIN diode assembly, diode module and electronic equipment

Abstract

The invention provides a PIN diode assembly, a diode module and electronic equipment, and relates to the technical field of electronics, the PIN diode assembly comprises a PIN diode and two heat dissipation substrates, and the PIN diode is of a cylindrical structure; the two heat dissipation substrates are respectively arranged at two electrode ends of the PIN diode; a welding part is convexly arranged at the side end of each heat dissipation substrate; and conductive layers are arranged between each heat dissipation substrate and the corresponding electrode end and on the side wall of the welding part. The PIN diode assembly can be flexibly assembled on the circuit board through the welding part on the heat dissipation substrate, the two electrode ends of the PIN diode can simultaneously dissipate heat through the heat dissipation substrate with insulation and high heat dissipation performance, and the PIN diode assembly and the circuit board form full-link interconnection through the conducting layer. Therefore, the PIN diode assembly has the characteristics of high heat dissipation performance, high voltage resistance, simple structure and small occupied space at the same time, and the problems of low heat dissipation performance and large occupied space of the existing high-power PIN diode assembly are solved.

Description

Technical Field

[0001] The present application belongs to the field of electronic technology, and in particular relates to a PIN diode component, a diode module and an electronic device. Background Art

[0002] A PIN diode (positive-intrinsic negative diode) is a diode with a PIN structure formed by adding a thin layer of low-doped intrinsic semiconductor layer between a P-type semiconductor material and an N-type semiconductor material. It is widely used in the field of electronics. It can be used as a variable impedance element and is also a basic element for various power devices.

[0003] In high-power electronic devices such as digital matched filters, a large number of high-power PIN diodes with high current and withstand voltage of more than kilovolts are needed. The height and cross-sectional area of ​​this type of PIN diodes are much larger than those of traditional chip diodes, and large-volume PIN diodes have greater heat dissipation requirements than chip diodes.

[0004] In the prior art, a PIN diode is encapsulated in a shell made of heat dissipation material, and a channel for placing a conductive pin is provided in the shell, so that the PIN diode dissipates heat through the shell, and at the same time, the two electrode ends of the PIN diode can be connected to an external circuit board through the conductive pins. However, the packaging structure causes the PIN diode assembly to occupy a large space, resulting in the inability to miniaturize a device equipped with a large number of PIN diode assemblies. Alternatively, the PIN diode is arranged on top of a heat sink, and the heat sink dissipates heat on one side of the PIN diode, but the heat dissipation performance of this method is limited. Therefore, how to reduce the space occupied by the high-power PIN diode assembly while improving the heat dissipation capacity is an urgent problem to be solved. Summary of the invention

[0005] The present application provides a PIN diode component, a diode module and an electronic device, which to a certain extent solve the problem that the existing high-power PIN diode components have low heat dissipation performance and occupy a large space.

[0006] In order to achieve the above objectives, this application adopts the following technical solutions:

[0007] In the first aspect, the present application provides a PIN diode assembly, comprising: a PIN diode and two heat dissipation substrates, the PIN diode being a columnar structure; the two heat dissipation substrates being respectively arranged at two electrode ends of the PIN diode; a welding portion being protruding from the side end of each heat dissipation substrate; and a conductive layer being arranged between each heat dissipation substrate and the corresponding electrode end and on the side wall of the welding portion.

[0008] Based on the PIN diode assembly provided by the present application, a heat dissipation substrate is respectively arranged at the two electrode ends of the high-power PIN diode, and a welding portion and a conductive layer are arranged on the heat dissipation substrate, so that the two electrode ends can simultaneously conduct heat to the corresponding heat dissipation substrate for heat dissipation, which has a better heat dissipation effect than the existing method of only dissipating heat for a single electrode. The PIN diode assembly can be flexibly assembled on any circuit board through the welding portion arranged on the heat dissipation substrate, and the electrode end of the PIN diode can be fully interconnected with the circuit board through the heat dissipation substrate and the conductive layer arranged on the welding portion. The structure of the PIN diode assembly is simple and simultaneously meets the functions of efficient heat dissipation, small space occupation and flexible assembly.

[0009] In an optional design, a welding layer is provided between each electrode end and the corresponding conductive layer, and the material of the welding layer is a conductive material.

[0010] Based on this optional design, the material of the welding layer can be tin. In the process of assembling the PIN diode assembly, the heat dissipation substrate, tin sheet and PIN diode in the PIN diode assembly can be pressed and limited in sequence using a high-precision limit tooling, and then the PIN diode assembly can be heated through a furnace reflow process so that the tin sheets at both ends of the PIN diode are melted. Then, the two ends of the PIN diode are simultaneously welded to the correspondingly connected heat dissipation substrate through an automated process. Compared with the existing method of manually assembling the PIN diode and the heat dissipation device, the production efficiency, product consistency, product quality and structural stability are higher.

[0011] In addition, the interface between the two electrode ends of the PIN diode and the corresponding heat dissipation substrate can dissipate heat through the intermetallic compounds produced during the welding process. Compared with the existing method of hard connecting the PIN diode and the heat dissipation device through structures such as screws and using thermal conductive paste to dissipate heat at the contact interface, the heat dissipation effect can be effectively improved.

[0012] In another optional design, a solder resist layer is disposed on the periphery of the solder layer, and the orthographic projection of the solder resist layer on the conductive layer does not overlap with the orthographic projection of the soldering portion on the conductive layer.

[0013] Based on this optional design, the conductive layer on the side wall of the welding part needs to be wave-soldered with the electroplated copper layer in the through-hole on the circuit board to achieve full-link connectivity between the PIN diode and the circuit board. During the welding of the PIN diode assembly through an automated process, the melted welding layer has fluidity, and the solder resist layer can limit the flow area of ​​the melted welding layer to prevent the melted welding layer from flowing to the side wall of the welding part and covering the conductive layer on the side wall of the welding part.

[0014] In an optional design, the area of ​​the heat dissipation substrate is greater than or equal to the area of ​​the electrode terminal.

[0015] Based on this optional design, when the area of ​​the heat dissipation substrate is greater than or equal to the area of ​​the electrode end of the corresponding connected PIN diode, the heat generated by the electrode end can be fully transferred to the heat dissipation substrate for heat dissipation. The larger the contact area between the electrode end and the heat dissipation substrate and the area of ​​the heat dissipation substrate, the better the heat dissipation effect.

[0016] Optionally, the material of the heat dissipation substrate is an insulating thermally conductive material.

[0017] Based on this optional design, when multiple PIN diode components are arranged on the circuit board, even if the PIN diode is in a high-voltage working environment, the heat dissipation substrate with insulating properties can avoid interference between the relative electrode ends of two adjacent PIN diodes, greatly reducing the spacing between two adjacent PIN diode components, thereby reducing the space occupied by the multiple arranged PIN diode components, and allowing more PIN diode components to be arranged in a device with limited space.

[0018] Optionally, the material of the conductive layer is copper.

[0019] In a second aspect, an embodiment of the present application provides a diode module, comprising: a substrate and at least one PIN diode component provided by various possible designs of the first aspect and arranged on the substrate.

[0020] In an optional design, the substrate includes: a first circuit substrate; a welding portion in each PIN diode assembly is fixed on the first circuit substrate, and a heat dissipation substrate in each PIN diode assembly is perpendicular to the first circuit substrate.

[0021] Based on this design, the soldering part of the PIN diode assembly can be fixed on the pad on the surface of the first circuit substrate by means of surface mount technology (SMT) and other assembly methods. When the diode module includes multiple PIN diode assemblies, the multiple PIN diode assemblies can be horizontally and densely distributed on the first circuit substrate, and the conductive layer on the side wall of the soldering part can be connected to the circuit in the first circuit substrate through the soldering pad on the surface of the first circuit substrate, thereby forming a full-link interconnection between the PIN diode in each PIN diode assembly and the first circuit substrate through the soldering part.

[0022] Optionally, a first conducting hole corresponding to the welding portion in each PIN diode assembly is provided in the first circuit substrate.

[0023] Based on this optional design, the welding part of the PIN diode assembly can be fixed in the first conductive hole of the first circuit substrate by wave soldering, plug-in and other assembly methods, and the conductive layer on the side wall of the welding part can be connected to the circuit in the first circuit substrate through the electroplated copper layer on the side wall of the first conductive hole, so that the PIN diode in each PIN diode assembly forms a full-link interconnection with the first circuit substrate through the welding part.

[0024] In another optional design, the substrate includes: a first circuit substrate and at least one second circuit substrate; each second circuit substrate is vertically arranged on the first circuit substrate; a plurality of PIN diode components are arranged on each second circuit substrate, and the plurality of PIN diode components are arranged along the height direction of the corresponding second circuit substrate; the welding portion in each PIN diode component is fixed on the corresponding second circuit substrate, and the heat dissipation substrate in each PIN diode component is perpendicular to the corresponding second circuit substrate.

[0025] Based on this design, the soldering part in the PIN diode assembly can be fixedly connected to the pad on the surface of the second circuit substrate by means of assembly methods such as surface mount technology (SMT), and the second circuit substrate can be fixed on the first circuit substrate. A plurality of second circuit substrates are vertically arranged on the first circuit substrate, and a plurality of PIN diode assemblies are arranged along the height direction of each second circuit substrate. A diode module can be assembled in which a plurality of PIN diodes are densely arranged in the horizontal direction and densely stacked in the height direction, so that each PIN diode assembly can realize full-link circuit interconnection with the first circuit substrate through the second circuit substrate.

[0026] Optionally, a second via hole corresponding to the welding portion is provided in the second circuit substrate.

[0027] Based on this design, the welding part of each PIN diode assembly can be fixed in the second via hole of the second circuit substrate by wave soldering, plug-in or other assembly methods, so that the conductive layer on the side wall of the welding part can be connected to the circuit in the second circuit substrate through the electroplated copper layer on the side wall of the second via hole, thereby forming a full-link interconnection between the PIN diode in each PIN diode assembly and the second circuit substrate and the first circuit substrate through the welding part.

[0028] Optionally, at least one solder finger is protruding from each second circuit substrate; and a third conductive hole correspondingly connected to each solder finger is provided in the first circuit substrate. For example, the solder finger on each second circuit substrate can be fixed in the third conductive hole of the first circuit substrate by wave soldering, plug-in or other assembly methods, so that each second circuit substrate is electrically connected to the first circuit substrate.

[0029] In a third aspect, an embodiment of the present application provides an electronic device, including a diode module provided by various possible designs of the aforementioned second aspect.

[0030] The technical effects of the third aspect provided in the present application can refer to the technical effects of each possible implementation method of the first and second aspects mentioned above, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 It is a schematic diagram of the structure of a PIN diode provided in an embodiment of the present application.

[0032] Figure 2 It is a schematic diagram of the overall structure of a PIN diode assembly provided in an embodiment of the present application.

[0033] Figure 3 It is a schematic diagram of the exploded structure of a PIN diode component provided in an embodiment of the present application.

[0034] Figure 4 It is a structural schematic diagram of a diode module provided in an embodiment of the present application.

[0035] Figure 5 It is a schematic diagram of the structure of another diode module provided in an embodiment of the present application.

[0036] Figure 6 It is a schematic diagram of the assembly structure of a second circuit substrate and multiple PIN diode components provided in an embodiment of the present application.

[0037] Figure 7 It is a structural schematic diagram of the front side of a second circuit substrate provided in an embodiment of the present application.

[0038] Figure 8 It is a structural schematic diagram of the back side of a second circuit substrate provided in an embodiment of the present application.

[0039] Fig. 9 It is a structural schematic diagram of an electronic device provided in an embodiment of the present application.

[0040] Reference numerals:

[0041] 100, PIN diode assembly; 110, PIN diode; 1101, electrode terminal; 120, heat dissipation substrate; 1201, welding part; 130, conductive layer; 140, welding layer; 150, solder resist layer; 200, diode module; 210, first circuit substrate; 2101, first via hole; 2102, third via hole; 220, second circuit substrate; 2201, second via hole; 2202, tin finger; 2203, circuit layer; 300, electronic device; 310, processor. DETAILED DESCRIPTION

[0042] Ordinary diodes are composed of PN junctions. A PIN diode is a diode with a PIN structure formed by adding a thin layer of low-doped intrinsic semiconductor layer between P-type and N-type semiconductor materials. A large number of PIN diodes are required in electronic devices such as digital matched filters. PIN diodes need to have high current flow, high power, and high voltage resistance, and the voltage resistance value can reach more than kilovolts. Usually, the height, cross-sectional area and package volume of this type of PIN diode are much larger than traditional SMD diodes to achieve high current flow. Figure 1 A structural schematic diagram of a PIN diode 110 with a large cross-sectional area packaging structure is shown. This type of PIN diode 110 is generally a cylindrical structure. Exemplarily, the shape of the PIN diode 110 can be a cylinder, a cube, etc. This type of PIN diode 110 has two electrode ends 1101, and the two electrode ends 1101 are respectively an anode electrode end 1101a and a cathode electrode end 1101b, and the two electrode ends 1101 are located at different sides of the PIN diode. The volume of this type of PIN diode is relatively large.

[0043] The larger the size of the PIN diode, the greater the heat dissipation requirement. The heat dissipation requirement of a large-volume PIN diode is much greater than that of a traditional SMD diode, and it takes up more space in an electronic device. In the prior art, in order to solve the heat dissipation problem of a PIN diode, a method is to encapsulate the PIN diode in a shell made of heat dissipation material, and to provide a channel for placing conductive pins in the shell, so that the PIN diode dissipates heat through the shell, and at the same time, the two electrode ends of the PIN diode can be connected to an external circuit board through the conductive pins, but the packaging structure will further increase the size of the PIN diode, resulting in the inability to miniaturize electronic devices that need to install a large number of PIN diodes. Another method is to weld a copper pillar between the anode terminal of the PIN diode and the welding wire of the circuit board to achieve interconnection of the electrical performance of the anode terminal, and provide a long thread structure at the cathode terminal that can be screwed into the heat sink, so that the cathode terminal contacts the heat sink through a hardware connection for heat dissipation, and conductive paste and thermal conductive paste need to be provided at the cathode terminal to ensure effective grounding of the cathode terminal. However, the heat dissipation capacity of the single-sided electrode terminal is poor, and additional copper pillars, long thread structures, etc. need to be provided, which increases the volume and equipment cost of the PIN diode. At the same time, the two electrode terminals are respectively connected to the circuit board through welding wires and to the ground through conductive paste. The conductive paste is easy to lose during long-term use, resulting in a small effective grounding area of ​​the cathode terminal, poor reliability and stability of the heat dissipation component, and a short service life.

[0044] Therefore, in order to solve the technical problem that both improving the heat dissipation capacity of the high-power PIN diode 110 and reducing the occupied space of the PIN diode 110 cannot be taken into account at the same time, the present application provides a PIN diode assembly 100, a diode module 200 and an electronic device 300, wherein a heat dissipation substrate 120 is respectively arranged at the two electrode ends 1101 of the high-power PIN diode 110, so that the two electrode ends 1101 are both cooled by the heat dissipation substrate 120, and the heat dissipation effect is better than that of a single-end heat dissipation method. The PIN diode assembly 100 can be installed on any circuit board through the welding portion 1201 on the side wall of the heat dissipation substrate 120, and the electrode end 1101 of the PIN diode 110 can be interconnected with the circuit on the circuit board through the heat dissipation substrate 120 and the conductive layer 130 on the welding portion 1201, without the need to arrange additional conductive pins. The PIN diode assembly 100 composed of the PIN diode 110 and the heat dissipation substrate 120 located at the two electrode ends 1101 occupies a small space and has efficient heat dissipation capacity.

[0045] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0046] In the description of the embodiments of the present application, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features.

[0047] In the description of the present application, “plurality” means at least two, for example, two, three, etc., unless otherwise clearly and specifically defined.

[0048] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0049] In the present application, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being “above”, “above”, and “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0050] In the description of the present application, it should be understood that the terms "inside", "outside", "side", "top", "bottom", "front", "back", etc., indicating directions or positional relationships, are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore should not be understood as a limitation on the present application.

[0051] In the description of this application, it should be noted that the term "and / or" is merely a description of the association relationship between associated objects, indicating that three relationships may exist. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone.

[0052] It should also be noted that, in the embodiments of the present application, the same figure mark is used to represent the same component or the same part. For the same parts in the embodiments of the present application, the figure may only mark one of the parts or components as an example. It should be understood that the figure mark also applies to other identical parts or components.

[0053] The present application embodiment provides a PIN diode assembly 100, see Figure 2 The overall structural diagram of the PIN diode assembly 100 is shown as follows Figure 3 The exploded structural diagram of the PIN diode assembly 100 is shown. In a possible implementation, the PIN diode assembly 100 provided in the present application includes a PIN diode 110 and two heat dissipation substrates 120 respectively disposed at two electrode ends 1101 of the PIN diode 110.

[0054] Among them, Figure 3As shown, the PIN diode 110 is a columnar structure. Exemplarily, the shape of the PIN diode 110 can be a cylinder as shown in the figure, or a rectangular parallelepiped or a cube. The PIN diode 110 has two electrode ends 1101, and the two electrode ends 1101 are respectively a P-pole electrode end 1101a and an N-pole electrode end 1101b, and the two electrode ends 1101 are located at two opposite sides of the PIN diode 110. The PIN diode 110 in the PIN diode assembly 100 provided in the embodiment of the present application has high withstand voltage, high current and high power functions and a large cross-sectional area, wherein the withstand voltage value of the PIN diode 110 can reach more than kilovolts, and both electrode ends 1101 have high heat dissipation requirements.

[0055] The plate surfaces of the heat dissipation substrates 120 located at both ends of the PIN diode 110 are parallel to the end surfaces of the corresponding electrode ends 1101. When the PIN diode 110 is working, the heat generated by the two electrode ends 1101 can be respectively conducted to the correspondingly connected heat dissipation substrates 120, and the heat is conducted to the external environment through the heat dissipation substrates 120 for heat dissipation. Compared with the existing method of only dissipating the heat of a single electrode end 1101 of the PIN diode 110, it has a better heat dissipation effect.

[0056] Furthermore, in order to increase the contact area between the heat dissipation substrate 120 and the electrode end 1101 of the PIN diode 110 and improve the heat dissipation effect of the heat dissipation substrate 120 on the PIN diode 110, the area of ​​each heat dissipation substrate 120 can be greater than or equal to the end surface area of ​​the corresponding connected electrode end 1101. The larger the area of ​​the heat dissipation substrate 120, the better the heat dissipation effect.

[0057] As an example but not limitation, the shape of the heat dissipation substrate 120 can be square, rectangular, circular or other shapes.

[0058] In the PIN diode assembly 100 provided in the present application, one or more soldering parts 1201 are protruding from the side ends of the two heat dissipation substrates 120, and the soldering parts 1201 on the two heat dissipation substrates 120 are located on the same side of the heat dissipation substrate 120. The soldering parts 1201 are fixed to the conductive through holes in the circuit board by plugging or wave soldering, so that the PIN diode assembly 100 can be fixed to the circuit board. Figure 2 and Figure 3 As shown, if a soldering portion 1201 is protruding from each of the two heat dissipation substrates 120 , the soldering portions 1201 on the two heat dissipation substrates 120 are located on the same side of the heat dissipation substrates 120 and are arranged opposite to each other in the height direction of the PIN diode 110 .

[0059] In one example, the materials of the heat dissipation substrate 120 and the welding portion 1201 on the heat dissipation substrate 120 can both be insulating thermal conductive materials. For example, the heat dissipation substrate 120 can be a glass substrate or a ceramic plate made of aluminum nitride material. In the PIN diode assembly 100, the welding portion 1201 and the main body of the heat dissipation substrate 120 can be an integrally formed structure. After the heat dissipation substrate 120 is made of insulating thermal conductive material, the welding portion 1201 with a preset shape and size can be cut out at the side end of the heat dissipation substrate 120 by laser cutting technology.

[0060] In one embodiment, the shape of the soldering portion 1201 may be the same as the shape of the conductive through hole on the circuit board, and the size of the soldering portion 1201 may match the size of the conductive through hole on the circuit board, so that the soldering portion 1201 can be inserted into the conductive through hole. Exemplarily, the shape of the soldering portion 1201 may be a cube, a cylinder, an elliptical cylinder, or other shapes.

[0061] In the present application, a heat dissipation substrate 120 is respectively provided at the two electrode ends 1101 of the high-power PIN diode 110, and the side end of the heat dissipation substrate 120 has a welding portion 1201 for connecting to the circuit board, thereby forming a PIN diode assembly 100 with small space occupation, efficient heat dissipation, insulation and independent welding. A plurality of PIN diode assemblies 100 can be distributed on the circuit board. When the PIN diode 110 is used in a high-voltage environment, since the two electrode ends 1101 of the PIN diode 110 are provided with a heat dissipation substrate 120 made of insulating thermal conductive material, it can be used as a pressure-resistant material for high and low voltage scenes, so the distance between two adjacent PIN diode assemblies 100 can be greatly reduced, effective insulation can be achieved, and the space occupied by the PIN diode 110 can be greatly reduced, achieving miniaturization.

[0062] See also Figure 3 The exploded structural schematic diagram of the PIN diode assembly 100 shown in the figure, since the heat dissipation substrate 120 and the welding portion 1201 are insulated, in order to enable the PIN diode 110 in the PIN diode assembly 100 to achieve current flow with the external circuit board through the welding portion 1201, a conductive layer 130 is arranged between each heat dissipation substrate 120 in the PIN diode assembly 100 and the electrode end 1101 of the correspondingly connected PIN diode 110, and a conductive layer 130 is also arranged on the side wall of the welding portion 1201 on each heat dissipation substrate 120, and at the same time, the conductive layer 130 on the side wall of the welding portion 1201 is connected to the conductive layer 130 located between the heat dissipation substrate 120 and the PIN diode 110, so that when the welding portion 1201 is fixed to the conductive through hole in the circuit board, the conductive layer 130 can be used to transmit the electrical signal between the electrode end 1101 of the PIN diode 110 and the circuit board, thereby realizing the current flow function.

[0063] Optionally, if the soldering portion 1201 has a plurality of side walls in different directions, a conductive layer 130 may be disposed on at least one of the side walls, and the conductive layer 130 on at least one of the side walls is connected to the conductive layer 130 disposed on the heat dissipation substrate 120. The larger the area of ​​the conductive layer 130 disposed on the side wall of the soldering portion 1201, the greater the flow rate between the PIN diode assembly 100 and the circuit board. For example, Figure 3 As shown, assuming that the shape of the welding portion 1201 is square and the welding portion 1201 includes side walls in four different directions, a conductive layer 130 can be set on the side wall of the welding portion 1201 facing the PIN diode 110 and the side wall facing away from the PIN diode 110, and the conductive layer 130 set on the side wall of the welding portion 1201 facing the PIN diode 110 is connected to the conductive layer 130 set on the heat dissipation substrate 120. Furthermore, in order to increase the flow rate between the PIN diode assembly 100 and the circuit board, a conductive layer 130 can be set on the side walls in the five directions exposed of the square welding portion 1201.

[0064] In one example, the conductive layer 130 may be a circuit layer with a conductive function formed on the heat dissipation substrate 120 and the welding portion 1201 by a sputtering process and an electroplating process. Exemplarily, the material of the conductive layer 130 may be a conductive metal, such as copper. In the process of making the conductive layer 130 on the heat dissipation substrate 120, a metal layer may be first formed on the side of the heat dissipation substrate 120 facing the PIN diode 110 and the side wall of the welding portion 1201 by a sputtering process, and then a metal film that can be used to prevent oxidation of the metal layer is plated on the surface of the metal layer by an electroplating process, thereby improving the wear resistance, conductivity and corrosion resistance of the conductive layer 130.

[0065] Further, in the PIN diode assembly 100 provided in the embodiment of the present application, the PIN diode 110 can be connected to the heat dissipation substrate 120 at both ends through the welding layer 140. Figure 2 and Figure 3 As shown, a welding layer 140 is arranged between each heat dissipation substrate 120 in the PIN diode assembly 100 and the electrode end 1101 of the corresponding connected PIN diode 110, and the welding layer 140 is located between the conductive layer 130 on the heat dissipation substrate 120 and the electrode end 1101 of the PIN diode 110. The material of the welding layer 140 is a conductive material, so that the two electrode ends 1101 of the PIN diode 110 can pass current through the welding layer 140 and the conductive layer 130.

[0066] As an example but not limitation, the material of the welding layer 140 can be a tin sheet, and the heat dissipation substrate 120 provided with the conductive layer 130 can be a direct copper-plated ceramic substrate (Direct Plate Copper, DPC). The PIN diode 110 can be welded to the heat dissipation substrate 120 provided with the conductive layer 130 through an automated process. Specifically, a high-precision limit fixture can be first used to press and limit a heat dissipation substrate 120, a tin sheet, a PIN diode 110, another tin sheet, and another heat dissipation substrate 120 in the PIN diode assembly 100 in a top-to-bottom order, and then transferred to a reflow soldering device. The PIN diode assembly 100 is heated through a furnace reflow process, so that the tin sheets at both ends of the PIN diode 110 are melted, and then the two ends of the PIN diode 110 are simultaneously welded to the correspondingly connected heat dissipation substrate 120. The welding process does not require manual operation and can be fully automated. Compared with the existing PIN diode assembly 100 that needs to be manually generated, the PIN diode assembly 100 produced by automated production has higher production efficiency, product consistency, and product quality.

[0067] Optionally, the shape of the welding layer 140 may be circular, square, rectangular, elliptical or other shapes. The area of ​​the welding layer 140 may be less than or equal to the area of ​​the conductive layer 130 between the heat dissipation substrate 120 and the corresponding PIN diode 110, and the area of ​​the conductive layer 130 and the area of ​​the welding layer 140 may be greater than or equal to the area of ​​the electrode end 1101 of the corresponding PIN diode 110. As an example and not a limitation, Figure 3 As shown, in the embodiment of the present application, in order to facilitate the distinction between the P-pole and N-pole of the PIN diode 110, the cross-sectional area of ​​the P-pole electrode end 1101a can be larger than the cross-sectional area of ​​the N-pole electrode end 1101b, and the areas of the two welding layers 140 located at both ends of the PIN diode 110 are equal in size and are equal to the cross-sectional area of ​​the P-pole electrode end 1101a.

[0068] In the present application, the two end surfaces of the PIN diode 110 are simultaneously welded to the heat dissipation substrate 120 through the welding layer 140. The heat generated by the two electrode ends 1101 of the PIN diode 110 can be conducted to the correspondingly connected heat dissipation substrate 120 through the welding layer 140 and the conductive layer 130 for heat dissipation, and the interface between the electrode end 1101 of the PIN diode 110 and the heat dissipation substrate 120 can be dissipated through the intermetallic compound in the welding layer 140. If the welding layer 140 is a tin sheet, the intermetallic compound can be a lattice compound produced by metal elements such as tin, silver, copper and lead. Compared with the method of contacting the heat sink and dissipating heat through a hard connection method such as a long thread in the prior art, this interface heat dissipation method can effectively reduce the interface thermal resistance and improve the heat dissipation effect of the PIN diode 110. Moreover, by fixing the electrode end 1101 of the PIN diode 110 and the heat dissipation substrate 120 through a large area of ​​the welding layer 140, the structural strength and stability of the PIN diode component 100 can be higher, and the service life of the PIN diode component 100 can be effectively improved.

[0069] Furthermore, in order to prevent the melted tin sheet from flowing to the side wall of the soldering portion 1201 during the reflow process, see Figure 2 and Figure 3 , a solder resist layer 150 may be provided on each heat dissipation substrate 120, and the solder resist layer 150 is specifically provided at the periphery of the solder layer 140, and the orthographic projection of the solder resist layer 150 on the conductive layer 130 does not overlap with the orthographic projection of the solder portion 1201 on the conductive layer 130. In other words, the solder resist layer 150 and the solder layer 140 are located at the same height, and the solder resist layer 150 is located on the side of the conductive layer 130 facing the PIN diode 110. In the process of assembling the PIN diode assembly 100, the solder resist layer 150 can limit the flow area of ​​the melted solder layer 140, and prevent the solder portion 1201 at the side end of the heat dissipation substrate 120 from being covered by the intermetallic compound.

[0070] In one example, the solder resist layer 150 may surround the periphery of the solder layer 140. For example, assuming that the solder layer 140 is circular in shape, the solder resist layer 150 may be in a ring shape surrounding the periphery of the circular solder layer 140.

[0071] In another example, the solder resist layer 150 is only located in the area between the solder layer 140 and the soldering portion 1201. Figure 2 and Figure 3 As shown, the shape of the soldering layer 140 is circular, the soldering resist layer 150 is located between the soldering layer 140 and the soldering portion 1201 , and the shape of the soldering resist layer 150 may be a concave shape.

[0072] As an example but not limitation, the material of the solder resist layer 150 may be ink.

[0073] In the embodiment of the present application, two electrode ends 1101 of the high-power packaged PIN diode 110 are respectively welded to a heat dissipation substrate 120 having a conductive layer 130 and a protruding welding portion 1201, forming a low-cost PIN diode component 100 that meets the functions of efficient heat dissipation, reliable interconnection, flexible assembly, efficient insulation, and automated assembly.

[0074] The PIN diode assembly 100 and the substrate provided in the above embodiment can form a diode module 200. In a possible implementation, see Figure 4 A schematic diagram of the structure of a diode module 200 is shown and Figure 5 The schematic diagram of the structure of another diode module 200 shown in the figure, the diode module 200 provided in the embodiment of the present application includes a substrate and at least one PIN diode assembly 100 provided in any of the above embodiments arranged on the substrate. When the number of PIN diode assemblies 100 in the diode module 200 is different, the PIN diode assemblies 100 can be arranged on different substrates in different distribution modes, and therefore, the PIN diode assemblies 100 can be assembled with different substrates into different diode modules 200.

[0075] In one embodiment, Figure 4 As shown, the substrate in the diode module 200 may include a first circuit substrate 210, on which one or more PIN diode components 100 are arranged at intervals, and the welding portion 1201 in each PIN diode component 100 can be fixed on the first circuit substrate 210, and the heat dissipation substrate 120 in the PIN diode component 100 is perpendicular to the first circuit substrate 210, and the end faces of the two electrode ends 1101 of the PIN diode 110 in the PIN diode component 100 are perpendicular to the first circuit substrate 210.

[0076] In this embodiment, the first circuit substrate 210 may be a printed circuit board (PCB). The PIN diode assembly 100 may be assembled on the first circuit substrate 210 through the welding portion 1201. When the diode module 200 includes a plurality of PIN diode assemblies 100, the plurality of PIN diode assemblies 100 may be horizontally distributed on the top of the first circuit substrate 210.

[0077] Exemplarily, the soldering portion 1201 of each PIN diode assembly 100 can be fixed on a soldering pad on the surface of the first circuit substrate 210 by surface mounting technology (SMT) or other assembly methods, and the conductive layer 130 on the side wall of the soldering portion 1201 can be connected to the circuit within the first circuit substrate 210 through the soldering pad on the surface of the first circuit substrate 210, thereby forming a full-link interconnection between the PIN diode 110 in each PIN diode assembly 100 and the first circuit substrate 210 through the soldering portion 1201.

[0078] Furthermore, a first via hole 2101 corresponding to the soldering portion 1201 on each heat dissipation substrate 120 in each PIN diode assembly 100 may be provided on the first circuit substrate 210. When the PIN diode assembly 100 is fixed on the first circuit substrate 210, the soldering portion 1201 on each heat dissipation substrate 120 in the PIN diode assembly 100 may be fixed in the first via hole 2101 of the first circuit substrate 210 by wave soldering, plugging or other assembly methods. The first via hole 2101 on the first circuit substrate 210 may be used to conduct or connect the copper foil circuit layer between the circuit board layer and the conductive pattern in the layer. When the soldering portion 1201 on the heat dissipation substrate 120 is fixed in the first via hole 2101, the conductive layer 130 on the side wall of the soldering portion 1201 may be connected to the electroplated copper layer on the side wall of the first via hole 2101, so that the PIN diode 110 in the PIN diode assembly 100 forms a full link interconnection with the first circuit substrate 210 through the conductive layer 130.

[0079] In addition, if Figure 4 As shown, the electrode ends 1101 of two adjacent PIN diodes 110 on the first circuit substrate 210 are separated by a heat dissipation substrate 120, and the heat dissipation substrate 120 has an insulating property. Even in a high-voltage application scenario, the heat dissipation substrates 120 at both ends of the PIN diode 110 can effectively avoid crosstalk between the electrode ends 1101 of two adjacent PIN diodes 110. Therefore, the distance between two adjacent PIN diode components 100 can be greatly reduced, and then the space occupied by the multiple PIN diode components 100 arranged can be reduced. More PIN diode components 100 can also be arranged on the first circuit substrate 210 with limited space to achieve a dense arrangement of the PIN diode components 100.

[0080] In another embodiment, in order to arrange more PIN diode components 100 on the substrate, the PIN diode components 100 may be distributed not only horizontally on the substrate but also vertically. Figure 5In the diode module 200 shown, the substrate in the diode module 200 includes a first circuit substrate 210 and at least one second circuit substrate 220. Each second circuit substrate 220 is vertically arranged on the first circuit substrate 210. When the diode module 200 includes a plurality of second circuit substrates 220, the plurality of second circuit substrates 220 are arranged at intervals on top of the first circuit substrate 210.

[0081] See also Figure 6 The schematic diagram of the assembly structure of the second circuit substrate 220 and multiple PIN diode components 100 shown in the figure, multiple PIN diode components 100 can be arranged on the second circuit substrate 220, and the multiple PIN diode components 100 are arranged at intervals along the height direction of the second circuit substrate 220. Further, multiple columns of PIN diode components 100 can be arranged along the height direction of the second circuit substrate 220, and each column includes multiple PIN diode components 100 distributed at intervals in the height direction, so that the PIN diode components 100 in the diode module 200 can not only be densely distributed in the horizontal direction, but also densely stacked up and down in the height direction. The multiple described in the embodiment of the present application is specifically two or more than two.

[0082] like Figure 5 and Figure 6 As shown, when the PIN diode assembly 100 is fixed on the second circuit substrate 220, the heat dissipation substrate 120 in each PIN diode assembly 100 is perpendicular to the second circuit substrate 220, and the plate surface of the heat dissipation substrate 120 in the PIN diode assembly 100 and the end surface of the electrode end 1101 of the PIN diode 110 are parallel to the top surface of the first circuit substrate 210.

[0083] In the embodiment of the present application, the second circuit substrate 220 and the first circuit substrate 210 can both be printed circuit boards (PCB). Figure 6 As shown, one or more tin fingers 2202 may be protruding from the side wall of each second circuit substrate 220, and the tin fingers 2202 of each second circuit substrate 220 may be fixed to the pad on the surface of the first circuit substrate 210 by surface mounting technology (SMT) or other assembly methods, so that the circuit layer 2203 in the second circuit substrate 220 is connected to the circuit in the first circuit substrate 210 through the tin fingers 2202.

[0084] Furthermore, the first circuit substrate 210 may be provided with a third via hole 2102 for correspondingly connecting with each tin finger 2202 on each second circuit substrate 220. The tin finger 2202 on the second circuit substrate 220 may be fixed in the third via hole 2102 by wave soldering, plugging or other assembly methods, and the circuit layer 2203 in the second circuit substrate 220 may be connected to the electroplated copper layer on the side wall of the third via hole 2102 through the tin finger 2202, so that the PIN diode 110 in the PIN diode assembly 100 provided on each second circuit substrate 220 forms a full-link interconnection with the first circuit substrate 210 and the second circuit substrate 220 through the welding portion 1201.

[0085] In one example, see Figure 7 The structural diagram of the front side of the second circuit substrate 220 is shown in FIG. Figure 8 The schematic diagram of the structure of the back side of the second circuit substrate 220 is shown, and the second circuit substrate 220 is provided with a second via 2201 fixedly connected to the welding portion 1201 in each PIN diode assembly 100, and each second via 2201 is connected to the circuit layer 2203 in the second circuit substrate 220, and communicates with the tin finger 2202 protruding from the side end of the second circuit substrate 220 through the circuit layer 2203. At the same time, the welding portion 1201 at the side end of the heat dissipation substrate 120 in each PIN diode assembly 100 can be fixed in the second via 2201 by wave soldering, so as to fix the PIN diode assembly 100 on the second circuit substrate 220, and the conductive layer 130 on the side wall of the welding portion 1201 can be connected to the electroplated copper layer in the second via 2201. The heat dissipation substrate 120 of the PIN diode assembly 100 is fixed in the second conductive hole 2201 of the second circuit substrate 220, and the tin finger 2202 of the second circuit substrate 220 is fixed in the third conductive hole 2102 of the first circuit substrate 210. Then, the PIN diode 110 in the PIN diode assembly 100 can form a full-link interconnection with the second circuit substrate 220 and the first circuit substrate 210 through the conductive layer 130 in sequence.

[0086] In the different diode modules 200 provided in the above embodiments, a plurality of PIN diode components 100 may be arranged horizontally on the first circuit substrate 210 to assemble into a diode module 200 in which a plurality of PIN diodes 110 are densely distributed in the horizontal direction. A plurality of second circuit substrates 220 may also be arranged vertically on the first circuit substrate 210, and a plurality of PIN diode components 100 may be arranged in the height direction and the horizontal direction of the second circuit substrate 220 to assemble into a diode module 200 in which a plurality of PIN diodes 110 are densely arranged in the horizontal direction and can be densely stacked in the height direction. The two electrode ends 1101 of the PIN diode 110 can dissipate heat efficiently and quickly through the correspondingly connected heat dissipation substrate 120 at the same time, and the electrode ends 1101 at both ends can be electrically connected to the first circuit substrate 210 through the heat dissipation substrate 120 and the conductive layer 130 on the welding part 1201, or can be electrically connected to the first circuit substrate 210 through the heat dissipation substrate 120, the conductive layer 130 on the welding part 1201 and the second circuit substrate 220 in sequence, so that the circuit connection is more stable, and long-term stable interconnection will increase the service life of the diode module 200 to a certain extent. In addition, the assembly process of the PIN diode assembly 100, the assembly between the PIN diode assembly 100 and the second circuit substrate 220 or the first circuit substrate 210, and the assembly between the first circuit substrate 210 and the second circuit substrate 220 can all be achieved through fully automated welding technology, without manual operation, which can effectively improve the product consistency and quality of the diode module 200. In addition, the heat dissipation substrate 120 also has voltage resistance and insulation properties. Even if the PIN diode 110 is in a high-voltage operating environment, no interference will occur between the electrode ends of two adjacent PIN diodes 110. The spacing between two adjacent PIN diode components 100 in a high-density layout can be reduced, and the space occupied by a large number of PIN diode components 100 in the diode module 200 can be reduced, which is conducive to the miniaturization of the diode module 200.

[0087] Based on the diode module 200 provided in the above embodiments, the present application embodiment further provides an electronic device 300, see Fig. 9 The electronic device 300 shown in the figure is a schematic diagram of a structure, and the electronic device 300 includes the diode module 200 and the processor 310 shown in the above embodiments. The processor 310 can be connected to the first circuit substrate 210 in the diode module 200, and is used to control the voltage of the PIN diode 110 in the PIN diode assembly 100 arranged on the first circuit substrate 210 through the first circuit substrate 210, or control the voltage of the PIN diode 110 in the PIN diode assembly 100 on the second circuit substrate 220 through the first circuit substrate 210 and the second circuit substrate 220 arranged on the first circuit substrate 210.

[0088] Exemplarily, the electronic device 300 may be a digital matched filter or other device that needs to be provided with a large number of PIN diodes 110 with high current flow, high power, and high withstand voltage.

[0089] The processor 310 may include one or more processing units, for example, the processor 310 may include an application processor (AP), a modem processor, a controller, a memory, a video codec, a digital signal processor (DSP) and / or a baseband processor, etc. Different processing units may be independent devices or integrated into one or more processors.

[0090] It is to be understood that the structure illustrated in the embodiment of the present application does not constitute a specific limitation on the electronic device 300. In other embodiments of the present application, the electronic device 300 may include more or fewer components than shown in the figure, or combine some components, or split some components, or arrange the components differently. The components shown in the figure may be implemented in hardware, software, or a combination of software and hardware.

[0091] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art who is familiar with the present technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A PIN diode component, characterized in that: include: A PIN diode (110) and two heat dissipation substrates (120), wherein the PIN diode (110) is a columnar structure; The two heat dissipation substrates (120) are respectively arranged at two electrode ends (1101) of the PIN diode (110); A welding portion (1201) is convexly provided on the side end of each heat dissipation substrate (120); A conductive layer (130) is provided between each heat dissipation substrate (120) and the corresponding electrode end (1101) and on the side wall of the welding portion (1201).

2. The PIN diode assembly according to claim 1, characterized in that: A welding layer (140) is provided between each electrode end (1101) and the corresponding conductive layer (130); The material of the welding layer (140) is a conductive material.

3. The PIN diode assembly according to claim 2, characterized in that: A solder resist layer (150) is disposed on the periphery of the soldering layer (140), and the orthographic projection of the solder resist layer (150) on the conductive layer (130) does not overlap with the orthographic projection of the soldering portion (1201) on the conductive layer (130).

4. The PIN diode assembly according to any one of claims 1 to 3, characterized in that: The area of ​​the heat dissipation substrate (120) is greater than or equal to the area of ​​the electrode end (1101).

5. The PIN diode assembly according to any one of claims 1 to 4, characterized in that: The material of the heat dissipation substrate (120) is an insulating heat-conductive material.

6. The PIN diode assembly according to any one of claims 1 to 5, characterized in that: The conductive layer (130) is made of copper.

7. A diode module, characterized in that: include: A substrate and at least one PIN diode assembly (100) according to any one of claims 1 to 6 arranged on the substrate.

8. The diode module according to claim 7, characterized in that: The substrate comprises: a first circuit substrate (210); The welding portion (1201) in each of the PIN diode components (100) is fixed on the first circuit substrate (210), and the heat dissipation substrate (120) in each of the PIN diode components (100) and the first circuit substrate (210) are perpendicular to each other.

9. The diode module according to claim 8, characterized in that: A first conducting hole (2101) corresponding to the welding portion (1201) in each of the PIN diode components (100) is provided in the first circuit substrate (210).

10. The diode module according to claim 7, characterized in that: The substrate comprises: a first circuit substrate (210) and at least one second circuit substrate (220); Each of the second circuit substrates (220) is vertically arranged on the first circuit substrate (210); A plurality of the PIN diode components (100) are arranged on each of the second circuit substrates (220), and the plurality of the PIN diode components (100) are arranged in an array along a height direction of the corresponding second circuit substrate (220); The welding portion (1201) in each of the PIN diode components (100) is fixed on the corresponding second circuit substrate (220), and the heat dissipation substrate (120) in each of the PIN diode components (100) and the corresponding second circuit substrate (220) are perpendicular to each other.

11. The diode module according to claim 10, characterized in that: The second circuit substrate (220) is provided with a second conducting hole (2201) corresponding to the welding portion (1201).

12. The diode module according to claim 10 or 11, characterized in that: At least one solder finger (2202) is protruded from each of the second circuit substrates (220); The first circuit substrate (210) is provided with a third conducting hole (2102) correspondingly connected to each of the solder fingers (2202).

13. An electronic device, characterized in that: Comprising the diode module (200) according to any one of claims 7 to 12.

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