Light-emitting device and light-emitting device

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a light-emitting device and a light-emitting device. The light-emitting device at least comprises a substrate, a first electrode, a first insulating layer, a conducting layer, a first light-emitting area and a second light-emitting area, the first electrode is arranged on one side of the lower surface of the substrate, the first insulating layer is arranged on one side of the upper surface of the substrate, and the conducting layer is located on the side, away from the substrate, of the first insulating layer. The conducting layer comprises a first conducting layer and a second conducting layer which are electrically isolated, the first light-emitting area is electrically connected with the first conducting layer, the second light-emitting area is electrically connected with the second conducting layer, the second light-emitting area is located on the peripheral side of the first light-emitting area, and the area of the first light-emitting area is smaller than that of the second light-emitting area; therefore, the purpose of adjusting the light-emitting beam angle of the light-emitting device is achieved, and different requirements for light sources under different scene requirements are met.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a light-emitting device and a light-emitting apparatus. Background Art

[0002] Light Emitting Diode (LED) is a semiconductor light-emitting element, usually made of semiconductor processes such as GaN, GaAs, GaP, GaAsP, etc., and its core is a PN junction with light-emitting characteristics. LED has the advantages of high luminous intensity, high efficiency, small size, and long service life, and is considered to be one of the most promising light sources at present. LED has been widely used in lighting, monitoring and command, high-definition broadcasting, high-end cinemas, office displays, conference interactions, virtual reality and other fields.

[0003] At present, in some application scenarios, there are special requirements for the range of LED light sources, the size of the light pattern, and the softness of the light spot transition. For example, in outdoor search and outdoor rescue scenarios, the light source is required to have a long range and strong penetration; in camping and lighting scenarios, the light pattern is required to be wide and the light spot transition is soft. However, it is difficult for existing light-emitting devices to simultaneously meet the different range requirements and light spot requirements in different scenarios.

[0004] It should be noted that the information disclosed in this background technology section is only intended to increase the understanding of the overall background of the present invention, and should not be regarded as acknowledging or suggesting in any form that the information constitutes prior art already known to a person skilled in the art. Summary of the invention

[0005] In order to solve the technical problem that the conventional light source cannot take into account both the range and the light spot requirements, the present invention provides a light emitting device and a light emitting apparatus.

[0006] In a first aspect, the present invention provides a light-emitting device, which at least includes a substrate, a first electrode, a first insulating layer, a conductive layer, a second insulating layer, a first light-emitting region, and a second light-emitting region.

[0007] The substrate has an upper surface and a lower surface relative to each other, a first electrode is arranged on one side of the lower surface of the substrate, a first insulating layer is arranged on one side of the upper surface of the substrate, a conductive layer is located on a side of the first insulating layer away from the substrate, the conductive layer includes an electrically isolated first conductive layer and a second conductive layer, the second electrode is electrically in contact with the first conductive layer, the third electrode is electrically in contact with the second conductive layer, the first light-emitting region is electrically in contact with the first conductive layer, the second light-emitting region is electrically in contact with the second conductive layer, and the second light-emitting region is located on the outer peripheral side of the first light-emitting region.

[0008] The top-view projection area of ​​the first light-emitting region is smaller than the top-view projection area of ​​the second light-emitting region.

[0009] In a second aspect, the present invention provides a light-emitting device, which adopts the light-emitting device of the above structure.

[0010] Based on the above, the present invention provides a light-emitting device and a light-emitting apparatus. Compared with the prior art, a first light-emitting area and a second light-emitting area are set so that the first light-emitting area and the second light-emitting area share a substrate. At the same time, the first light-emitting area and the second light-emitting area respectively control the input current through the second electrode and the third electrode, thereby achieving the purpose of adjusting the light beam angle of the light-emitting device, thereby meeting different requirements for light sources under different scene needs, and improving versatility and practicality. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following is a brief introduction to the drawings required for use in the embodiments or the prior art descriptions. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can also be obtained based on these drawings without creative work. The positional relationship described in the drawings in the following description is based on the direction of the components in the drawings unless otherwise specified.

[0012] Figure 1 A schematic diagram of a top view of a light emitting device according to an embodiment of the present invention; Figure 2 for Figure 1 Schematic diagram of the cross-sectional structure at AA in the middle; Figure 3 and Figure 4 A schematic diagram of a top view of an embodiment of a first light-emitting area and a second light-emitting area provided by the present invention; Figure 5 A schematic structural diagram of an embodiment of the first light-emitting area and the second light-emitting area provided by the present invention; Figure 6 for Figure 5 Schematic diagram of the local enlarged structure at N in the middle; Figure 7 for Figure 5 Schematic diagram of the local enlarged structure at M in the middle.

[0013] Reference numerals: DETAILED DESCRIPTION

[0014] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0015] In the description of the present invention, it should be noted that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first" and "second" are used only for descriptive purposes, and cannot be understood as indicating or implying relative importance, or implicitly indicating the number of technical features indicated. Thus, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more. In addition, the term "including" and any variation thereof all mean "at least including".

[0016] See also Figure 1 and Figure 2 , Figure 1 A schematic diagram of a top view of a light emitting device according to an embodiment of the present invention; Figure 2 for Figure 1 Schematic diagram of the cross-sectional structure at AA in the middle.

[0017] In order to solve the technical problem that the conventional light source mentioned above is difficult to meet the requirements of both range and light spot at the same time, or to achieve at least one of the above advantages or other advantages, an embodiment of the present invention provides a light-emitting device. The light-emitting device in the example is a vertical structure LED light-emitting device. Compared with the traditional horizontal structure LED light-emitting device and the flip-chip structure LED light-emitting device, the vertical structure LED light-emitting device solves the problem of uneven current density distribution in the active area of ​​the device due to the lateral expansion of the current, and has significant advantages, including but not limited to higher light output, more uniform white light, and lower cost.

[0018] like Figure 2As shown in , the light emitting device includes a substrate 10. The substrate 10 may be a conductive substrate. The substrate 10 may be a metal, alloy, silicon or silicon carbide material, which has good electron transmission, heat conduction and mechanical strength, and can achieve higher efficiency, better heat dissipation performance and lower cost. However, the present invention is not limited thereto, and the substrate 10 may also be made of other conductive materials or semiconductor materials, without limitation thereto.

[0019] Of course, in some other embodiments, the substrate 10 may also be an insulating substrate, for example, made of AlN. AlN material has high thermal conductivity, excellent electrical insulation and good thermal expansion coefficient. In actual production, it can be formulated according to the actual needs of the light-emitting device, which will not be repeated here.

[0020] The substrate 10 has an upper surface 11 and a lower surface 12 opposite to each other. The first electrode 20 is disposed on one side of the lower surface 12 of the substrate 10, and the first electrode 20 is electrically connected to the substrate 10. The first electrode 20 can be a single-layer, double-layer or multi-layer structure, for example, a stacked structure of Ti / Al, Ti / Al / Ti / Au, Ti / Al / Ni / Au, V / Al / Pt / Au, Ti / Ni / Pt / Au, etc.

[0021] The first insulating layer 30 is disposed on one side of the upper surface 11 of the substrate 10. The conductive layer 40 is located on the side of the first insulating layer 30 away from the substrate 10. The conductive layer 40 has good current conduction performance. Optionally, the conductive layer 40 can be a transparent conductive layer, such as an indium tin oxide (ITO) film, an indium zinc oxide (IZO) film, a carbon nanotube film, a metal mesh film, etc. Of course, in some other embodiments, the conductive layer 40 can be a metal conductive layer, including but not limited to one or more of chromium (Cr), nickel (Ni), aluminum (Al), titanium (Ti), platinum (Pt), and gold (Au), which is not limited in this case.

[0022] The first insulating layer 30 can isolate the current conduction between the substrate 10 and the conductive layer 40. In a specific implementation, the conductive layer 40 includes a first conductive layer 41 and a second conductive layer 42 that are electrically isolated from each other. The first conductive layer 41 and the second conductive layer 42 do not conduct current.

[0023] The second insulating layer 50 is disposed on a side of the conductive layer 40 away from the substrate 10. The second insulating layer 50 exposes at least a portion of the surface of the first conductive layer 41 and a portion of the surface of the second conductive layer 42. The exposed portion of the surface of the first conductive layer 41 is in electrical contact with the second electrode 60. The exposed portion of the surface of the second conductive layer 42 is in electrical contact with the third electrode 70.

[0024] The first light emitting region 80 is in electrical contact with the first conductive layer 41. The second light emitting region 90 is in electrical contact with the second conductive layer 42 and is located on the outer peripheral side of the first light emitting region 80. No current is conducted between the first light emitting region 80 and the second light emitting region 90. When the second electrode 60 and the third electrode 70 are connected to the power supply, the current is respectively conducted to the first light-emitting area 80 and the second light-emitting area 90 via the first conductive layer 41 and the second conductive layer 42, and then the angle of the light beam is adjusted by controlling the input current size and current density of the second electrode 60 and the third electrode 70: When the current density of the first light-emitting area 80 is greater than the current density of the second light-emitting area 90, the light intensity density at the center of the light source is high, the angle of the light beam is reduced, and the range and light penetration of the light source are improved, which can be used in scenes such as outdoor search and outdoor rescue.

[0025] When the current density of the first light-emitting area 80 is less than that of the second light-emitting area 90, the light intensity density at the center of the light source is low, the light beam angle is increased, and the light type range and the softness of the light spot transition are improved, which can be applied to scenes such as camping and lighting, thereby meeting different requirements for light sources in different scenes and improving versatility and practicality.

[0026] Preferably, the top projection area of ​​the first light emitting region 80 is smaller than the top projection area of ​​the second light emitting region 90 , so as to facilitate adjustment of the light beam angle of the entire light emitting device.

[0027] In some preferred embodiments, the top projection area of ​​the first light-emitting region 80 is not less than 50% of the top projection area of ​​the second light-emitting region 90. This avoids the situation where the light spot has a rough transition and a blue light ring due to the excessive current density of the first light-emitting region 80 when the first light-emitting region 80 and the second light-emitting region 90 are at the same current.

[0028] Furthermore, the top-view projection area of ​​the first light-emitting region 80 is less than 50% of the top-view projection area of ​​the overall light-emitting area of ​​the light-emitting device, which can improve the transition softness of the light spot and avoid the situation where the light spot has an uneven transition and a blue halo when the first light-emitting region 80 and the second light-emitting region 90 are at the same current.

[0029] In a specific embodiment, if Figure 3 , Figure 4 As shown, the ratio of the top projection radius r of the first light-emitting area 80 to the top projection radius R of the entire light-emitting area of ​​the light-emitting device is between 0.55:1 and 0.75:1. The ratio of the top projection width H of the second light-emitting area 90 to the top projection radius R of the entire light-emitting area of ​​the light-emitting device is between 0.45:1 and 0.25:1.

[0030] Through the above arrangement, it is convenient to design the size ratio of the first light-emitting area 80 and the second light-emitting area 90 during the manufacturing process, so that the top-view projection area of ​​the first light-emitting area 80 is 60% to 95% of the top-view projection area of ​​the second light-emitting area 90, thereby improving the transition softness of the light spot.

[0031] It should be noted that the top view projection area of ​​the entire light emitting region of the light emitting device described in this embodiment is the sum of the top view projection area of ​​the first light emitting region 80 and the top view projection area of ​​the second light emitting region 90 .

[0032] Please combine Figure 2 See also Figure 5 In some preferred embodiments, the first light emitting region 80 includes, from bottom to top, a first semiconductor layer 81, a first active layer 82, and a second semiconductor layer 83. The second light emitting region 90 includes, from bottom to top, a third semiconductor layer 91, a second active layer 92, and a fourth semiconductor layer 93.

[0033] The first semiconductor layer 81 and the third semiconductor layer 91 may be P-type semiconductor layers, which may provide holes to the first active layer 82 and the second active layer 92 under the action of a power supply. In some embodiments, the first semiconductor layer 81 and the third semiconductor layer 91 may include a nitride layer, an arsenide layer, or a phosphide layer doped with P-type impurities of one or more Group II elements. The P-type impurities may include one or a combination of Mg, Zn, and Be. Optionally, the first semiconductor layer 81 and the third semiconductor layer 91 may be a single-layer structure or a multi-layer structure having different compositions. In addition, the setting of the epitaxial structure is not limited thereto, and other types of epitaxial structures may be selected according to actual needs.

[0034] The first active layer 82 and the second active layer 92 may be a quantum well structure (Quantum Well, referred to as QW). In some embodiments, the first active layer 82 and the second active layer 92 may also be a multiple quantum well structure (Multiple Quantum Well, referred to as MQW), wherein the multiple quantum well structure includes multiple quantum well layers (Well) and multiple quantum barrier layers (Barrier) alternately arranged in a repeated manner, for example, a multiple quantum well structure of GaN / AlGaN, InAlGaN / InAlGaN, InGaN / AlGaN, InGaP / AlGaInP, AlGaInP / AlGaInP or InGaAs / AlGaAs. In addition, the composition and thickness of the well layer in the first active layer 82 and the second active layer 92 determine the wavelength of the generated light. In order to improve the luminous efficiency of the first active layer 82 and the second active layer 92, it can be achieved by changing the depth of the quantum well, the number of layers, thickness and / or other features of the paired quantum wells and quantum barriers in the first active layer 82 and the second active layer 92. Preferably, the first active layer 82 and the second active layer 92 are made of the same material and / or the same process.

[0035] The second semiconductor layer 83 and the fourth semiconductor layer 93 may be N-type semiconductor layers, which may provide electrons to the first active layer 82 and the second active layer 63 under the action of a power source. In some embodiments, the second semiconductor layer 83 and the fourth semiconductor layer 93 may include a nitride layer, an arsenide layer, or a phosphide layer doped with N-type impurities of one or more group IV elements. The N-type impurities may include one or a combination of Si, Ge, Sn. Optionally, the second semiconductor layer 83 and the fourth semiconductor layer 93 may be a single-layer structure or a multi-layer structure, and the multi-layer structure has different compositions.

[0036] On the basis of the above, the light emitting device further comprises a conductive layer 100, a plurality of first through holes 110 and a plurality of second through holes 120. The conductive layer 100 is located between the upper surface 11 of the substrate 10 and the first insulating layer 30, and is electrically connected to the substrate 10. Preferably, the conductive layer 100 may be a metal conductive layer.

[0037] A plurality of first through holes 110 penetrate from the first insulating layer 30 toward the side away from the substrate 10 to the second semiconductor layer 83, so as to expose a portion of the conductive layer 100 and electrically contact the second semiconductor layer 83. A plurality of second through holes 120 penetrate from the first insulating layer 30 toward the side away from the substrate 10 to the fourth semiconductor layer 93, so as to expose a portion of the conductive layer 100 and electrically contact the fourth semiconductor layer 93. Specifically, when the second electrode 60 and the third electrode 70 are connected to a power source, the current is respectively conducted to the first light-emitting region 80 and the second light-emitting region 90 via the first conductive layer 41 and the second conductive layer 42, so that the first active layer 82 and the second active layer 92 emit light, and then respectively conducted to the first electrode 20 via the first through hole 110 and the second through hole 120. The purpose of adjusting the angle of the light beam is achieved by controlling the magnitude of the input current of the second electrode 60 and the third electrode 70.

[0038] In a specific embodiment, please combine Figure 5 See also Figure 6 , Figure 7 , in a top view, the diameter of the second through hole 120 is Greater than the diameter of the first through hole 110 Specifically, the diameter of the second through hole 120 is is the diameter of the first through hole 110 1.5 to 2.5 times of.

[0039] Furthermore, in a top view, the number of the first through holes 110 per unit area is greater than the number of the second through holes 120. Specifically, the number of the first through holes 110 per unit area is 2 to 3 times the number of the second through holes 120.

[0040] Preferably, in a top view, the total area of ​​the first through holes 110 is 1.5% to 4% of the total area of ​​the first light emitting region 80 , and the total area of ​​the second through holes 120 is 1% to 3% of the total area of ​​the second light emitting region 90 .

[0041] Through the above design, the current distribution uniformity and the light efficiency per unit area of ​​the first light-emitting region 80 can be improved, and the light-emitting angle can be further reduced, so as to facilitate the adjustment of the light beam angle of the entire light-emitting device.

[0042] In some other embodiments, the ratio of the number of the first through holes 110 in the first light emitting region 80 to the number of the second through holes 120 in the second light emitting region 90 is 2:1-3:1.

[0043] Through the above design, the current distribution uniformity and the light efficiency per unit area of ​​the first light-emitting region 80 can be improved, and the light-emitting angle can be further reduced, so as to facilitate the adjustment of the light beam angle of the entire light-emitting device.

[0044] In some preferred embodiments, the thickness S of the conductive layer 40 is 3000-15000 angstroms, so as to balance the current lateral conduction capability of the conductive layer 40 and the production cost.

[0045] In some preferred embodiments, the light emitting device may further include a reflective layer 130. The reflective layer 130 covers the surface of the conductive layer 40 facing the first light emitting region 80 and the second light emitting region 90. The reflective layer 130 has a reflectivity of more than 90%, and can reflect the light radiated from the first active layer 82 and the second active layer 92 toward the substrate 10. The reflective layer 130 can be made of a metal material, including but not limited to at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Ti, Cr, Zn, Pt, Au and Hf or an alloy thereof.

[0046] In some preferred embodiments, the light emitting device is further provided with a fluorescent layer 140. The fluorescent layer 140 covers the surface of the first light emitting region 80 and the second light emitting region 90 away from the conductive layer 40. The fluorescent layer 140 is formed of a wavelength conversion material. Depending on the different wavelength conversion materials applied, the light radiated by the light emitting device has different properties. Further, the fluorescent layer 140 can be a film-like structure or a sheet-like structure.

[0047] Optionally, the light radiated by the light emitting device is one or more of red light, blue light, and green light. Of course, in some other embodiments, the light radiated by the light emitting device may also be other colors. In specific implementation, the wavelength conversion material may include silica gel and phosphor. The specific selection may be based on the actual product and application scenario.

[0048] Furthermore, the thickness L of the fluorescent layer 140 is 30-150 micrometers to balance the difficulty of the manufacturing process and the quality of the film layer.

[0049] In some preferred embodiments, there is a gap 150 between the first light emitting region 80 and the second light emitting region 90. The width W of the gap 150 may be 5-10 micrometers.

[0050] In some preferred embodiments, the present invention further provides a light-emitting device, which uses any of the light-emitting devices described above.

[0051] To sum up, compared with the prior art, the light-emitting device and the light-emitting apparatus provided by the present invention, by setting the first light-emitting area and the second light-emitting area, make the first light-emitting area and the second light-emitting area share a substrate, and at the same time, the first light-emitting area and the second light-emitting area respectively control the current density through the second electrode and the third electrode, thereby achieving the purpose of adjusting the light beam angle of the light-emitting device, thereby meeting the different requirements for light sources under different scene needs, and improving the versatility and practicality of the light-emitting device and the light-emitting apparatus.

[0052] Although the terminology such as first light-emitting area, second light-emitting area, etc. is used more frequently in this article, the possibility of using other terms is not excluded. These terms are used only to more conveniently describe and explain the essence of the present invention; interpreting them as any additional limitation is contrary to the spirit of the present invention.

[0053] In addition, those skilled in the art should understand that, although there are many problems in the prior art, each embodiment or technical solution of the present invention can be improved in only one or several aspects, without having to solve all the technical problems listed in the prior art or background technology at the same time. Those skilled in the art should understand that the content not mentioned in a claim should not be used as a limitation on the claim.

[0054] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light emitting device, characterized in that: include a substrate having opposing upper and lower surfaces; A first electrode is arranged on one side of the lower surface of the substrate; A first insulating layer, disposed on one side of the upper surface of the substrate; A conductive layer, located on a side of the first insulating layer away from the substrate, the conductive layer comprising a first conductive layer and a second conductive layer that are electrically isolated; a second electrode in electrical contact with the first conductive layer; a third electrode, electrically contacting the second conductive layer; a first light emitting region, electrically contacting the first conductive layer; a second light emitting region, electrically contacting the second conductive layer, and located at an outer peripheral side of the first light emitting region; The top-view projection area of ​​the first light-emitting region is smaller than the top-view projection area of ​​the second light-emitting region.

2. The light emitting device according to claim 1, characterized in that: The top-view projection area of ​​the first light-emitting region is not less than 50% of the top-view projection area of ​​the second light-emitting region.

3. The light emitting device according to claim 1, characterized in that: The ratio of the top-view projection radius r of the first light-emitting area to the top-view projection radius R of the entire light-emitting area of ​​the light-emitting device is 0.55:1 to 0.75:

1.

4. The light emitting device according to claim 1, characterized in that: The ratio of the top projection width H of the second light emitting area to the top projection radius R of the entire light emitting area of ​​the light emitting device is 0.45:1 to 0.25:

1.

5. The light emitting device according to claim 1, characterized in that: The light-emitting device also includes a second insulating layer, which is arranged on a side of the conductive layer away from the substrate, and the second insulating layer exposes at least a portion of the surface of the first conductive layer and a portion of the surface of the second conductive layer, the exposed portion of the surface of the first conductive layer is electrically in contact with the second electrode, and the exposed portion of the surface of the second conductive layer is electrically in contact with the third electrode.

6. The light emitting device according to claim 1, characterized in that: The first light emitting region includes a first semiconductor layer, a first active layer, and a second semiconductor layer stacked sequentially from bottom to top, and the second light emitting region includes a third semiconductor layer, a second active layer, and a fourth semiconductor layer stacked sequentially from bottom to top; The light-emitting device also has a conductive layer, a plurality of first through holes and a plurality of second through holes, the conductive layer is located between the upper surface of the substrate and the first insulating layer, a plurality of the first through holes penetrate from the first insulating layer toward the side away from the substrate to the second semiconductor layer to expose a partial area of ​​the conductive layer to be in electrical contact with the second semiconductor layer, and a plurality of the second through holes penetrate from the first insulating layer toward the side away from the substrate to the fourth semiconductor layer to expose a partial area of ​​the conductive layer to be in electrical contact with the fourth semiconductor layer.

7. The light emitting device according to claim 6, characterized in that: In a top view, the diameter of the second through hole is is the diameter of the first through hole 1.5 to 2.5 times of.

8. The light emitting device according to claim 6, characterized in that: In a top view, the number of the first through holes per unit area is 2 to 3 times the number of the second through holes.

9. The light emitting device according to claim 6, characterized in that: In a top view, the total area of ​​the first through holes is 1.5% to 4% of the total area of ​​the first light-emitting region.

10. The light emitting device according to claim 6, characterized in that: The total area of ​​the plurality of second through holes is 1% to 3% of the total area of ​​the second light emitting region.

11. The light emitting device according to claim 1, characterized in that: The thickness S of the conductive layer is 3000-15000 angstroms.

12. The light emitting device according to claim 1, characterized in that: The light emitting device further includes a reflective layer, and the reflective layer covers a surface of the conductive layer facing the first light emitting region and the second light emitting region.

13. The light emitting device according to claim 1, characterized in that: The light emitting device is further provided with a fluorescent layer, and the fluorescent layer covers a surface of the first light emitting region and the second light emitting region on a side away from the conductive layer.

14. The light emitting device according to claim 13, characterized in that: The fluorescent layer is a film-like structure or a sheet-like structure.

15. The light emitting device according to claim 13, characterized in that: The thickness L of the fluorescent layer is 30 to 150 micrometers.

16. The light emitting device according to claim 13, characterized in that: The radiated light of the light emitting device is one or more of red light, blue light and green light.

17. The light emitting device according to claim 1, characterized in that: There is a gap between the first light emitting area and the second light emitting area, and a width W of the gap is 5 to 10 micrometers.

18. A light emitting device, characterized in that: The light-emitting device adopts the light-emitting device according to any one of claims 1 to 18.

Images