Light-emitting chip and light-emitting substrate

Abstract

The invention discloses a light-emitting chip, a manufacturing method thereof and a light-emitting module, and belongs to the technical field of display. The light-emitting chip comprises a substrate, a light-emitting unit, a dimming film layer and a first protection layer. The first protection layer with high hardness is arranged on the side, away from the substrate, of the dimming film layer, so that the risk that the dimming film layer is mechanically damaged can be effectively reduced. For example, in the process of connecting the light-emitting chip and the driving back plate by using the needling type die bonder, the first protective layer with relatively high hardness can better bear the pressing force applied by a thimble in the needling type die bonder, so that the probability that the dimming film layer is damaged due to the pressing force applied by the thimble is relatively low, and the light-emitting efficiency is improved. Therefore, the light emitting effect of the light-emitting chip can be effectively improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a light-emitting chip and a light-emitting substrate. Background Art

[0002] Light-Emitting Diode (LED) has the advantages of pure color, wide dynamic range, high brightness, high definition, low operating voltage, low power consumption, long life, impact resistance, large viewing angle and stable and reliable operation, so that more and more display products can integrate LED light-emitting chips. Usually, by transferring a large number of LED light-emitting chips to the driving backplane, each LED light-emitting chip can emit light under the drive of the driving backplane.

[0003] Generally, a large number of LED light-emitting chips are transferred and connected to a driving backplane, so that each LED light-emitting chip can emit light under the driving action of the driving backplane. Here, the driving backplane connected with the LED light-emitting chips can be directly used as a display panel for displaying images, and can also be used as a backlight panel to provide light source for the liquid crystal display panel.

[0004] The process of connecting the LED chip to the driver backplane requires the use of a needle-piercing die bonder. However, during the die bonding process of the LED chip, the die bonder's ejector pins will apply pressure to the LED chip. When the pressure applied by the ejector pins to the LED chip is too large, the LED chip is easily damaged, resulting in poor light output from the LED chip. Summary of the invention

[0005] The embodiment of the present application provides a light-emitting chip and a manufacturing method thereof, and a light-emitting module, which can solve the problem of poor light-emitting effect of the light-emitting chip in the prior art. The technical solution is as follows:

[0006] In one aspect, a light-emitting chip is provided, comprising: a substrate, a light-emitting unit, a dimming film layer, and a first protective layer;

[0007] The light emitting unit is located at one side of the substrate, and the light emitting side of the light emitting unit faces the substrate;

[0008] The dimming film layer is located on a side of the substrate away from the light-emitting unit, and the dimming film layer is used to increase the divergence angle of the light emitted by the light-emitting unit and passing through the substrate;

[0009] The first protective layer is located on a side of the dimming film layer facing away from the substrate;

[0010] Wherein, the hardness of the first protective layer is higher than that of the dimming film layer.

[0011] Optionally, the dimming film layer comprises: a plurality of first inorganic layers and a plurality of second inorganic layers stacked, wherein the plurality of first inorganic layers and the plurality of second inorganic layers are alternately arranged;

[0012] In the dimming film layer, a first inorganic layer and a second inorganic layer that are adjacently distributed are used to form a dimming layer group, and in the same dimming layer group, the first inorganic layer is closer to the substrate than the second inorganic layer;

[0013] The hardness of the first protective layer is higher than the hardness of at least one of the first inorganic layer and the second inorganic layer.

[0014] Optionally, the hardness of the second inorganic layer is higher than that of the first inorganic layer, and the first protective layer and the second inorganic layer in the outermost dimming layer group are the same film layer.

[0015] Optionally, the hardness of the first inorganic layer is higher than that of the second inorganic layer, the first protective layer is in contact with the second inorganic layer in the outermost dimming layer group, and the material of the first protective layer is the same as that of the first inorganic layer.

[0016] Optionally, the hardness of the first protective layer is higher than that of the first inorganic layer and higher than that of the second inorganic layer, and the first protective layer is in contact with the second inorganic layer in the outermost dimming layer group.

[0017] Optionally, the thickness of the first protective layer is greater than or equal to the thickness of the second inorganic layer in the outermost dimming layer group.

[0018] Optionally, the material of the first protective layer includes: any one of niobium pentoxide, hafnium dioxide and zirconium oxide.

[0019] Optionally, the number of the dimming layer groups in the dimming film layer ranges from 18 to 39.

[0020] Optionally, the light-emitting chip further includes: a reflective film layer, wherein the reflective film layer is located on a side of the light-emitting unit facing away from the substrate.

[0021] Optionally, a portion of the reflective film layer is in contact with a side of the light-emitting unit facing away from the substrate;

[0022] Alternatively, the light-emitting chip further comprises: an insulating protective layer, the insulating protective layer being located on the side of the light-emitting unit away from the substrate, and a portion of the insulating protective layer being in contact with the side of the light-emitting unit away from the substrate, and the reflective film layer being located on the side of the insulating protective layer away from the substrate.

[0023] Optionally, the light-emitting chip further includes: a second protective layer, the second protective layer being located on a side of the reflective film layer away from the substrate;

[0024] Wherein, the hardness of the second protective layer is higher than that of the reflective film layer.

[0025] Optionally, there is at least one light-emitting unit, and the light-emitting unit includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a current blocking layer and a current spreading layer stacked in a direction perpendicular to and away from the substrate.

[0026] Optionally, when there are multiple light-emitting units, two adjacent light-emitting units among the multiple light-emitting units are respectively a first light-emitting unit and a second light-emitting unit;

[0027] The light emitting chip further comprises: a bridging electrode and an auxiliary insulating layer;

[0028] The two ends of the bridging electrode are respectively connected to the first semiconductor layer of the first light-emitting unit and the current spreading layer of the second light-emitting unit, and the auxiliary insulating layer is located on a side of the bridging electrode facing the substrate.

[0029] Optionally, the light-emitting chip further includes: a first welding electrode and a second welding electrode, wherein the first welding electrode and the second welding electrode are both distributed on a side of the light-emitting unit away from the substrate, and the first welding electrode and the second welding electrode are overlapped with different positions of the light-emitting unit respectively;

[0030] The shape of the orthographic projection of the first welding electrode on the substrate is different from the shape of the orthographic projection of the second welding electrode on the substrate.

[0031] On the other hand, a light-emitting substrate is provided, comprising: a driving backplane, and a plurality of light-emitting chips distributed on the driving backplane, wherein the light-emitting chip is any one of the light-emitting chips described above.

[0032] The technical solution provided by the embodiment of the present application has at least the following beneficial effects:

[0033] By providing a first protective layer with a higher hardness on the side of the dimming film layer away from the substrate, the risk of mechanical damage to the dimming film layer can be effectively reduced. For example, in the process of using a needle-piercing die bonder to connect the light-emitting chip and the driver backplane, the first protective layer with a higher hardness can better bear the pressing force applied by the ejector pins in the needle-piercing die bonder, so as to ensure that the probability of the dimming film layer being damaged by the pressing force applied by the ejector pins is low, thereby effectively improving the light output effect of the light-emitting chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0035] Figure 1 It is a schematic diagram of a film structure of a light-emitting chip provided in an embodiment of the present application;

[0036] Figure 2 is a schematic diagram of a film layer structure of another light-emitting chip provided in an embodiment of the present application;

[0037] Figure 3 This is a schematic diagram of a film layer structure of another light-emitting chip provided in an embodiment of the present application;

[0038] Figure 4 is a light distribution curve of light emitted by the light-emitting chip provided in an embodiment of the present application;

[0039] Figure 5 is a schematic diagram of a film layer structure of another light-emitting chip provided in an embodiment of the present application;

[0040] Figure 6 is a schematic diagram of a film layer structure of another light-emitting chip provided in an embodiment of the present application;

[0041] Figure 7 is a schematic diagram of a film layer structure of another light-emitting chip provided in an embodiment of the present application;

[0042] Figure 8 It is a schematic diagram of a film structure of a light-emitting unit provided in an embodiment of the present application;

[0043] Fig. 9 is a top view of a light-emitting chip provided in an embodiment of the present application;

[0044] Fig.10 is a schematic diagram of a film layer structure of another light-emitting chip provided in an embodiment of the present application;

[0045] Fig.11 is a bottom view of a light-emitting chip provided in an embodiment of the present application;

[0046] Fig.12 is a top view of another light-emitting chip provided in an embodiment of the present application;

[0047] Fig.13 is a bottom view of another light-emitting chip provided in an embodiment of the present application;

[0048] Fig.14This is a schematic diagram of a sapphire substrate structure provided in an embodiment of the present application;

[0049] Fig.15 This is a schematic diagram of a patterned sapphire substrate structure provided in an embodiment of the present application;

[0050] Fig.16 is a schematic diagram of forming a transition layer on one side of a patterned structure of a sapphire substrate provided by an embodiment of the present application;

[0051] Fig.17 It is a schematic diagram of forming a tensile stress epitaxial layer on a side of a transition layer away from a substrate provided by an embodiment of the present application;

[0052] Fig.18 It is a schematic diagram of forming a first semiconductor layer on a side of a tensile stress epitaxial layer facing away from a substrate provided by an embodiment of the present application;

[0053] Fig.19 is a schematic diagram of forming a light-emitting layer on a side of a first semiconductor layer facing away from a substrate, provided in an embodiment of the present application;

[0054] Fig. 20 It is a schematic diagram of forming a second semiconductor layer on a side of the light-emitting layer away from the substrate provided by an embodiment of the present application;

[0055] Fig.21 is a schematic diagram of forming a current blocking layer on a side of the second semiconductor layer facing away from the substrate provided by an embodiment of the present application;

[0056] Fig. 22 It is a schematic diagram of forming a current spreading layer on a side of the current blocking layer away from the substrate, to form a complete light-emitting unit, provided by an embodiment of the present application;

[0057] Fig.23 is a schematic diagram of forming an auxiliary insulating layer between adjacent light-emitting units provided in an embodiment of the present application;

[0058] Fig.24 is a schematic diagram of forming a bridging electrode on a side of an auxiliary insulating layer facing away from a substrate provided by an embodiment of the present application;

[0059] Fig.25 is a schematic diagram of forming a first connection electrode and a second connection electrode on a side of a light-emitting unit away from a substrate, provided by an embodiment of the present application;

[0060] Fig.26 is a schematic diagram of a protective insulating layer formed on a side of a light-emitting unit away from a substrate provided in an embodiment of the present application;

[0061] Fig. 27It is a schematic diagram of forming a reflective film layer on a side of a protective insulating layer facing away from a substrate provided by an embodiment of the present application;

[0062] Fig.28 It is a schematic diagram of forming a second protective layer on a side of a reflective film layer facing away from a substrate provided by an embodiment of the present application;

[0063] Fig.29 It is a schematic diagram of forming a first welding electrode and a second welding electrode on a side of a second protective layer facing away from a substrate provided in an embodiment of the present application. DETAILED DESCRIPTION

[0064] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0065] Please refer to Figure 1 , Figure 1 Schematic diagram of the structure of a light emitting chip provided in an embodiment of the present application. The light emitting chip 000 may include: a substrate 100, a light emitting unit 200, a dimming film layer 300 and a first protective layer 400.

[0066] The light emitting unit 200 in the light emitting chip 000 is located on one side of the substrate 100 , and the light emitting side of the light emitting unit 200 may face the substrate 100 .

[0067] The dimming film layer 300 in the light-emitting chip 000 is located on the side of the substrate 100 away from the light-emitting unit 200. The dimming film layer 300 is used to increase the divergence angle of the light emitted by the light-emitting unit 200 and passing through the substrate 100. In this way, the dimming film layer 300 can ensure that the divergence angle of the light emitted by the light-emitting chip 000 is large. After the multiple light-emitting chips 000 are transferred and connected to the driving backplane to form a light-emitting substrate, it can be ensured that the light emitted by two adjacent light-emitting chips 000 can be better mixed, so that the light emitted by the light-emitting substrate is more uniform. For example, after such a light-emitting substrate is used as a backlight board, it can be ensured that the mixing distance of the backlight board is low, and then the overall thickness of the backlight module integrated with such a backlight board can be ensured to be low.

[0068] The first protection layer 400 in the light emitting chip 000 is located on a side of the dimming film layer 300 away from the light emitting unit 200 , and the hardness of the first protection layer 400 is higher than that of the dimming film layer 300 .

[0069] In the embodiment of the present application, since the hardness of the first protective layer 400 is higher than that of the dimming film layer 300, the risk of mechanical damage to the dimming film layer 300 can be effectively reduced through the protective effect of the first protective layer 400. For example, in the process of connecting the light-emitting chip 000 and the driving backplane using a needle-piercing die-bonding machine, the first protective layer 400 with greater hardness can better bear the pressing force applied by the ejector pins in the needle-piercing die-bonding machine, so as to ensure that the probability of the dimming film layer 300 being damaged by the pressing force applied by the ejector pins is low, thereby effectively improving the light-emitting effect of the light-emitting chip 000.

[0070] In summary, the light-emitting chip provided in the embodiment of the present application includes: a substrate, a light-emitting unit, a dimming film layer and a first protective layer. By providing a first protective layer with a higher hardness on the side of the dimming film layer away from the substrate, the risk of mechanical damage to the dimming film layer can be effectively reduced. For example, in the process of using a needle-piercing type crystal bonding machine to connect the light-emitting chip and the driving backplane, the first protective layer with a higher hardness can better bear the pressing force applied by the ejector pin in the needle-piercing type crystal bonding machine to ensure that the probability of the dimming film layer being damaged by the pressing force applied by the ejector pin is low, thereby effectively improving the light emission effect of the light-emitting chip.

[0071] Optional, such as Figure 2 As shown, Figure 2 3 is a schematic diagram of the structure of another light-emitting chip provided in an embodiment of the present application. The dimming film layer 300 in the light-emitting chip 000 is composed of a plurality of first inorganic layers 301 and a plurality of second inorganic layers 302 stacked in layers. The plurality of first inorganic layers 301 and the plurality of second inorganic layers 302 are arranged alternately, that is, a second inorganic layer 302 is distributed between two adjacent first inorganic layers 301, and a first inorganic layer 301 is distributed between two adjacent second inorganic layers 302.

[0072] In the dimming film layer 300 , a first inorganic layer 301 and a second inorganic layer 302 that are adjacently distributed together form a dimming layer group 300 a . In the same dimming layer group 300 a , the first inorganic layer 301 is closer to the substrate 100 than the second inorganic layer 302 .

[0073] Exemplarily, the dimming film layer 300 in the light-emitting chip 000 may be a distributed Bragg reflector. Then, a single dimming layer group 300a in the dimming film layer 300 is composed of an inorganic layer with a higher refractive index and an inorganic layer with a lower refractive index. That is, in the same dimming layer group 300a, when the refractive index of the first inorganic layer 301 is higher, the refractive index of the second inorganic layer 302 is lower; when the refractive index of the first inorganic layer 301 is lower, the refractive index of the second inorganic layer 302 is higher.

[0074] The hardness of the first protective layer 400 in the light emitting chip 000 is higher than the hardness of at least one of the first inorganic layer 301 and the second inorganic layer 302 .

[0075] It should be noted that the first protective layer 400 in the light-emitting chip 000, and the first inorganic layer 301 and the second inorganic layer 302 in the dimming module 300 can all be made of inorganic materials. Here, the choice of inorganic material directly determines the hardness of the film layer to be made. For example, a high-hardness inorganic material can be used to make the first protective layer 400, and an inorganic material with relatively low hardness can be used to make the first inorganic layer 301 and / or the second inorganic layer 302.

[0076] It should also be noted that one of the first inorganic layer 301 and the second inorganic layer 302 can also be made of an inorganic material with relatively high hardness. In this case, the material of the first protective layer 400 can be consistent with the material of the inorganic layer with the highest hardness in the first inorganic layer 301 and the second inorganic layer 302. Of course, the first inorganic layer 301 and the second inorganic layer 302 can also be made of inorganic materials with relatively low hardness. In this case, the material of the first protective layer 400 is different from the material of the first inorganic layer 301 and the material of the second inorganic layer 302. To this end, the embodiments of the present application will be schematically described by taking the following three possible implementation methods as examples:

[0077] In a first possible implementation, when the second inorganic layer 302 is made of an inorganic material with relatively high hardness, the hardness of the second inorganic layer 302 is higher than that of the first inorganic layer 301, the material of the second inorganic layer 302 can be the same as that of the first protective layer 400, and the hardness of the inorganic materials selected for the second inorganic layer 302 and the first protective layer 400 is higher than that of the inorganic material selected for the first inorganic layer 301.

[0078] In this case, if Figure 3 As shown, Figure 3 This is a structural schematic diagram of another light-emitting chip provided in an embodiment of the present application. Since in the same dimming layer group 300a in the dimming module 300, the first inorganic layer 301 is closer to the substrate 100 than the second inorganic layer 302. Therefore, the first protective layer 400 can be the same film layer as the second inorganic layer 302 in the outermost dimming layer group 300a. That is, the first protective layer 400 can be used as a film layer for protecting the dimming film layer 300, and can also be used as the second inorganic layer 302 in the outermost dimming layer group 300a to play a dimming role.

[0079] In this way, there is no need to set an additional protective film layer on the outermost side of the dimming film layer 300, so as to ensure that the probability of the dimming film layer 300 being mechanically damaged is low, thereby ensuring that the overall thickness of the film layer set on the side of the substrate 100 away from the light-emitting unit 200 in the light-emitting chip 000 is relatively small.

[0080] For example, in the dimming film layer 300, the second inorganic layer 302 can be made of inorganic materials with relatively high hardness such as niobium pentoxide, hafnium dioxide or zirconium oxide; the first inorganic layer 301 can be made of inorganic materials with relatively low hardness such as zinc oxide, titanium dioxide, tantalum pentoxide, silicon dioxide, magnesium oxide, etc.

[0081] The second possible implementation method is that when the first inorganic layer 301 is made of an inorganic material with relatively high hardness, the hardness of the first inorganic layer 301 is higher than the hardness of the second inorganic layer 302, the material of the first protective layer 400 can be the same as the material of the first inorganic layer 301, and the hardness of the inorganic materials selected for the first inorganic layer 301 and the first protective layer 400 is higher than the hardness of the material selected for the second inorganic layer 302.

[0082] In this case, if Figure 2 As shown, the first protective layer 400 needs to be in contact with the second inorganic layer 302 in the outermost dimming layer group 300a. Here, since in the same dimming layer group 300a in the dimming module 300, the first inorganic layer 301 is closer to the substrate 100 than the second inorganic layer 302. Therefore, by making the first protective layer 400 contact with the second inorganic layer 302 in the outermost dimming layer group 300a, it can be ensured that the first protective layer 400 can protect the second inorganic layer 302 in the dimming film layer 300, which is located at the outermost side and has a relatively low hardness.

[0083] For example, in the dimming film layer 300, the first inorganic layer 301 and the first protective layer 400 can be made of inorganic materials with relatively high hardness such as niobium pentoxide, hafnium dioxide or zirconium oxide; the second inorganic layer 302 can be made of inorganic materials with relatively low hardness such as zinc oxide, titanium dioxide, tantalum pentoxide, silicon dioxide, magnesium oxide, etc.

[0084] In a third possible implementation, when both the first inorganic layer 301 and the second inorganic layer 302 are made of inorganic materials with relatively low hardness, the material of the first protective layer 400 is different from the materials of the first inorganic layer 301 and the second inorganic layer 302. The hardness of the first protective layer 400 is higher than that of the first inorganic layer 301, and higher than that of the second inorganic layer 302.

[0085] In this case, if Figure 2As shown, the first protective layer 400 also needs to be in contact with the second inorganic layer 302 in the outermost dimming layer group 300a. In this way, by making the first protective layer 400 contact with the second inorganic layer 302 in the outermost dimming layer group 300a, it can be ensured that the first protective layer 400 can protect each first inorganic layer 301 and each second inorganic layer 302 in the dimming film layer 300.

[0086] For example, in the dimming film layer 300, the first protective layer 400 can be made of inorganic materials with relatively high hardness such as niobium pentoxide, hafnium dioxide or zirconium oxide; the first inorganic layer 301 and the second inorganic layer 302 can be made of any two of inorganic materials with relatively low hardness such as zinc oxide, titanium dioxide, tantalum pentoxide, silicon dioxide, magnesium oxide, etc.

[0087] Optionally, in order to ensure that the first protective layer 400 can better bear the pressing force applied by the ejector pins in the needle-piercing die-bonding machine, for the second possible implementation and the third possible implementation, the thickness of the first protective layer 400 needs to be greater than or equal to the thickness of the second inorganic layer 302 in the outermost dimming layer group 300a. In this way, the relatively thick first protective layer 400 can further reduce the probability of the dimming film layer 300 being damaged due to the pressing force applied by the ejector pins, thereby effectively improving the light output effect of the light-emitting chip 000.

[0088] In an embodiment of the present application, the number of dimming layer groups 300a in the dimming film layer 300 ranges from 18 to 39. Here, the sum of the overall thickness of the first protective layer 400 and the dimming film layer 300 ranges from 1 micron to 5 microns. In the process of light emitted by the light-emitting unit 200 passing through the dimming film layer 300, the dimming film layer 300 can regulate the exit angle of the emitted light. Exemplarily, by controlling the refractive index and thickness of the first inorganic layer 301 and the second inorganic layer 302, as well as the number of dimming layer groups 300a, the transmittance of the emitted light within different central wavelength ranges at different angles can be controlled. Among them, the thickness of the first inorganic layer 301 is calculated from one quarter of the central wavelength of the light passing through the first inorganic layer 301, and the thickness of the second inorganic layer 302 is also calculated from one quarter of the central wavelength of the light passing through the second inorganic layer 302.

[0089] When the number of dimming layer groups 300a in the dimming film layer 300 is in the range of 18 to 39, the divergence angle of the light emitted by the light-emitting unit 200 and passing through the dimming film layer 300 can be increased to within the range of 155° to 175°, so that the divergence angle of the light emitted by the light-emitting chip 000 can be within the range of 155° to 175°, thereby ensuring that the divergence angle of the light emitted by the light-emitting chip 000 is larger.

[0090] For example, Figure 4 As shown, Figure 4 This is a light distribution curve diagram of light emitted by a light-emitting chip provided in an embodiment of the present application. Figure 4 The three curves in the figure represent the light distribution curves of the light emitted by the light emitting unit 200 in the light emitting chip 000 at different light emission angles within the visible light range. Curve a represents the light distribution curve of the light emitting chip 000 at a light emission angle of 155°; curve b represents the light distribution curve of the light emitting chip 000 at a light emission angle of 165°; and curve c represents the light distribution curve of the light emitting chip 000 at a light emission angle of 175°. Figure 4 It can be seen from curves a, b and c in the figure that when the light-emitting unit 200 in the light-emitting chip 000 emits light in the visible light range and the number of dimming layer groups 300a in the dimming film layer 300 ranges from 18 to 39, the divergence angle of the light emitted by the light-emitting chip 000 can be in the range of 155° to 175°.

[0091] In this application, if Figure 2 and Figure 3 As shown, the light emitting chip 000 may further include: a reflective film layer 500, which may be located on the side of the light emitting unit 200 away from the substrate 100. The reflective film layer 500 is used to reflect the light emitted by the light emitting unit 200 that is transmitted in a direction away from the substrate 100, so that the reflected light can be emitted in a direction toward the substrate 100, thereby improving the light extraction rate of the light emitting chip 000.

[0092] For example, the reflective film layer 500 can also be a distributed Bragg reflector. The reflective film layer 500 is composed of a plurality of third inorganic layers 501 and a plurality of fourth inorganic layers 502 stacked in layers. The plurality of third inorganic layers 501 and the plurality of fourth inorganic layers 502 are arranged alternately. That is, a fourth inorganic layer 502 is distributed between two adjacent third inorganic layers 501, and a third inorganic layer 501 is distributed between two adjacent fourth inorganic layers 502. In addition, a third inorganic layer 501 and a fourth inorganic layer 502 that are adjacently distributed are used to form a reflective layer group 500a. The number of reflective layer groups 500a in the reflective film layer 500 is 10 to 70 groups, and the overall thickness is 2 microns to 6 microns.

[0093] In the same reflective layer group 500a, the fourth inorganic layer 502 is closer to the substrate 100 than the third inorganic layer 501. A single reflective layer group 500a in the reflective film layer 500 is composed of an inorganic layer with a higher refractive index and an inorganic layer with a lower refractive index, that is, when the refractive index of the third inorganic layer 501 is higher, the refractive index of the fourth inorganic layer 502 is lower; when the refractive index of the third inorganic layer 501 is lower, the refractive index of the fourth inorganic layer 502 is higher. The reflective film layer 500 controls the reflectivity of light within different central wavelength ranges at different angles by controlling the refractive index and thickness of the third inorganic layer 501 and the fourth inorganic layer 502, as well as the number of reflective layer groups 500a. The thickness of the third inorganic layer 501 is calculated from one quarter of the central wavelength of the light passing through the third inorganic layer 501. The thickness of the fourth inorganic layer 502 is calculated from one quarter of the central wavelength of the light passing through the fourth inorganic layer 502.

[0094] In the embodiment of the present application, there are two arrangements between the light-emitting film layer 500 and the light-emitting unit 200. The embodiment of the present application will take the following two cases as examples for explanation.

[0095] The first case, such as Figure 2 and Figure 3 As shown, a portion of the reflective film layer 500 can be in contact with the side of the light-emitting unit 200 away from the substrate 100. Here, since the reflective film layer 500 is composed of multiple layers of the third inorganic layer 501 and multiple layers of the fourth inorganic layer 502, the reflective film layer 500 has a certain insulation ability, so that even if a portion of the reflective film layer 500 is directly in contact with the side of the light-emitting unit 200 away from the substrate 100, it can be ensured that the internal structure of the light-emitting unit 200 will not be short-circuited.

[0096] For the second case, please refer to Figure 5 , Figure 5 A schematic diagram of the structure of another light-emitting chip provided in an embodiment of the present application. The light-emitting chip 000 may further include: an insulating protective layer 600, the insulating protective layer 600 is located on the side of the light-emitting unit 200 away from the substrate 100, and a portion of the insulating protective layer 600 is in contact with the side of the light-emitting unit 200 away from the substrate 100, and a reflective film layer 500 is located on the side of the insulating protective layer 600 away from the substrate 100.

[0097] Here, the main material of the insulating protective layer 600 is aluminum oxide, and its thickness is 1.15 microns to 11 microns. The insulating packaging performance of the insulating protective layer 600 is better than the insulating packaging performance of the reflective film layer 500. To this end, when a part of the insulating protective layer 600 is in contact with the side of the light-emitting unit 200 away from the substrate 100, it not only ensures that the internal structure of the light-emitting unit 200 will not short-circuit, but also improves the ability to package and protect the light-emitting unit 200. In this way, even if the reflective film layer 500 is mechanically damaged, the insulating protective layer 600 can prevent water vapor in the external environment from invading the interior of the light-emitting chip 000, thereby improving the reliability of the light-emitting chip 000.

[0098] In the present application, please refer to Figure 6 , Figure 6 A schematic diagram of the structure of another light-emitting chip provided in an embodiment of the present application. The light-emitting chip 000 may further include: a second protective layer 700, the second protective layer 700 being located on the side of the reflective film layer 500 facing away from the substrate 100. The hardness of the second protective layer 700 is at least higher than the hardness of at least one of the third inorganic layer 501 and the fourth inorganic layer 502 in the reflective film layer 500, and the thickness of the second protective layer 700 is 500 angstroms to 1000 angstroms. The second protective layer 700 having a certain thickness and a high hardness can protect the reflective film layer 500 from mechanical damage, prevent water vapor from invading the interior of the light-emitting chip 000, and further improve the reliability of the light-emitting chip 000.

[0099] It should be noted that the second protective layer 700 in the light-emitting chip 000, and the third inorganic layer 501 and the fourth inorganic layer 502 in the reflective module 500 can all be made of inorganic materials. Here, the choice of inorganic material directly determines the hardness of the film layer to be made. For example, a high-hardness inorganic material can be used to make the second protective layer 700, and an inorganic material with relatively low hardness can be used to make the third inorganic layer 501 and / or the fourth inorganic layer 502.

[0100] It should also be noted that one of the third inorganic layer 501 and the second inorganic layer 502 can also be made of an inorganic material with relatively high hardness. In this case, the material of the second protective layer 700 can be consistent with the material of the inorganic layer with the highest hardness in the third inorganic layer 501 and the fourth inorganic layer 502. Of course, the third inorganic layer 501 and the fourth inorganic layer 502 can also be made of inorganic materials with relatively low hardness. In this case, the material of the second protective layer 700 is different from the material of the third inorganic layer 501 and the material of the fourth inorganic layer 502. To this end, the embodiments of the present application will be schematically described by taking the following three possible implementation methods as examples:

[0101] A first possible implementation method is that when the third inorganic layer 501 is made of an inorganic material with relatively high hardness, the hardness of the third inorganic layer 501 is higher than that of the fourth inorganic layer 502, the material of the third inorganic layer 501 can be the same as that of the second protective layer 700, and the hardness of the inorganic materials selected for the third inorganic layer 501 and the second protective layer 700 is higher than that of the inorganic material selected for the fourth inorganic layer 502.

[0102] In this case, if Figure 7 As shown, Figure 7 : is a schematic diagram of the structure of another light-emitting chip provided by an embodiment of the present application. Since in the same reflective layer group 500a in the reflective module 500, the fourth inorganic layer 502 is closer to the substrate 100 than the third inorganic layer 501. Therefore, the second protective layer 700 can be the same film layer as the third inorganic layer 501 in the outermost reflective layer group 500a. That is, the second protective layer 700 can be used as a film layer for protecting the reflective film layer 700, and can also be used as the third inorganic layer 501 in the outermost reflective layer group 300a to reflect light.

[0103] In this way, there is no need to set an additional protective film layer separately on the outermost side of the reflective film layer 500, so as to ensure that the probability of the reflective film layer 500 being mechanically damaged is low, thereby ensuring that the overall thickness of the film layer set on the side of the light-emitting unit 200 away from the substrate 100 in the light-emitting chip 000 is relatively small.

[0104] For example, in the reflective film layer 500, the third inorganic layer 501 can be made of inorganic materials with relatively high hardness such as niobium pentoxide, hafnium dioxide or zirconium oxide; the fourth inorganic layer 502 can be made of inorganic materials with relatively low hardness such as zinc oxide, titanium dioxide, tantalum pentoxide, silicon dioxide, magnesium oxide, etc.

[0105] A second possible implementation method is that when the fourth inorganic layer 502 is made of an inorganic material with relatively high hardness, the hardness of the fourth inorganic layer 502 is higher than that of the third inorganic layer 501, the material of the second protective layer 700 can be the same as that of the fourth inorganic layer 502, and the hardness of the inorganic materials selected for the fourth inorganic layer 502 and the second protective layer 700 is higher than that of the material selected for the third inorganic layer 501.

[0106] In this case, if Figure 6As shown, the second protective layer 700 needs to be in contact with the third inorganic layer 501 in the outermost reflective layer group 500a. Here, since in the same reflective layer group 500a in the reflective film layer 500, the fourth inorganic layer 502 is closer to the substrate 100 than the third inorganic layer 501. Therefore, by making the second protective layer 700 contact with the third inorganic layer 501 in the outermost reflective layer group 500a, it can be ensured that the second protective layer 700 can protect the third inorganic layer 501 in the reflective film layer 500, which is located at the outermost side and has a relatively low hardness.

[0107] For example, in the reflective film layer 500, the fourth inorganic layer 502 and the second protective layer 700 can be made of inorganic materials with relatively high hardness such as niobium pentoxide, hafnium dioxide or zirconium oxide; the third inorganic layer 501 can be made of inorganic materials with relatively low hardness such as zinc oxide, titanium dioxide, tantalum pentoxide, silicon dioxide, magnesium oxide, etc.

[0108] In a third possible implementation, when both the fourth inorganic layer 502 and the third inorganic layer 501 are made of inorganic materials with relatively low hardness, the material of the second protective layer 700 is different from the materials of the third inorganic layer 501 and the fourth inorganic layer 502. The hardness of the second protective layer 700 is higher than that of the third inorganic layer 501, and higher than that of the fourth inorganic layer 502.

[0109] In this case, if Figure 6 As shown, the second protective layer 700 also needs to be in contact with the third inorganic layer 501 in the outermost reflective layer group 700a. In this way, by making the second protective layer 700 contact with the third inorganic layer 501 in the outermost reflective layer group 500a, it can be ensured that the second protective layer 700 can protect each third inorganic layer 501 and each fourth inorganic layer 502 in the reflective film layer 500.

[0110] For example, in the reflective film layer 500, the second protective layer 700 can be made of inorganic materials with relatively high hardness such as niobium pentoxide, hafnium dioxide, zirconium oxide or aluminum oxide; the third inorganic layer 501 and the fourth inorganic layer 502 can be made of any two of inorganic materials with relatively low hardness such as zinc oxide, titanium dioxide, tantalum pentoxide, silicon dioxide, magnesium oxide, etc.

[0111] In the embodiment of the present application, the number of the light-emitting unit 200 included in the light-emitting chip 000 is at least one. Figure 8Each light-emitting unit 200 in the light-emitting chip 000 includes: a first semiconductor layer 202, a light-emitting layer 203, a second semiconductor layer 204, a current blocking layer 205 and a current spreading layer 206 stacked in a direction vertically and away from the substrate 100. Optionally, each light-emitting unit 200 also includes: a tensile stress epitaxial layer 201 located on the side of the first semiconductor layer 202 facing the substrate 100, and the tensile stress epitaxial layer 201 is used for the transition between the substrate 100 and the first semiconductor layer 202.

[0112] Here, the main material of the tensile stress epitaxial layer 201 is gallium nitride, and the thickness is 500 angstroms to 1500 angstroms.

[0113] The main material of the first semiconductor 202 is gallium nitride, doped with tetravalent silicon, and has a thickness of 0.5 micrometers to 5 micrometers.

[0114] The main materials of the light emitting layer 203 are gallium nitride and indium gallium nitride, which is a barrier / well pair stacked structure of the two materials, the number of stacked groups is 5 to 12 groups, and the thickness is 100 angstroms to 1500 angstroms.

[0115] The main material of the second semiconductor layer 204 is gallium nitride, doped with trivalent magnesium, and has a thickness of 0.5 micrometers to 5 micrometers.

[0116] The main material of the current blocking layer 205 is indium gallium nitride or silicon dioxide, and the thickness is 100 angstroms to 500 angstroms.

[0117] The main material of the current spreading layer 206 is indium tin oxide, and the thickness is 500 angstroms to 1500 angstroms.

[0118] Exemplarily, the orthographic projection of the first semiconductor layer 202 on the substrate 100 is located within the orthographic projection of the tensile stress epitaxial layer 201 on the substrate 100; the orthographic projection of the light-emitting layer 203 on the substrate 100 is located within the orthographic projection of the first semiconductor layer 202 on the substrate 100, and in a direction parallel to the substrate 100, the edges of the light-emitting layer 203 and the first semiconductor 202 do not overlap; the orthographic projection of the second semiconductor layer 204 on the substrate 100 is located within the orthographic projection of the light-emitting layer 203 on the substrate 100; the orthographic projection of the current blocking layer 205 on the substrate 100 is located in the central area of ​​the orthographic projection of the second semiconductor layer 204 on the substrate 100, and in a direction parallel to the substrate 100, the current blocking layer 205 and the edges of the second semiconductor 204 do not overlap; the orthographic projection of the current spreading layer 206 on the substrate 100 is located within the orthographic projection of the second semiconductor layer 204 on the substrate 100, and the current spreading layer 206 covers the current blocking layer 205.

[0119] In the present application, after an electric field is formed on both sides of the light-emitting unit 200, the first semiconductor layer 202 can inject electrons into the light-emitting layer 203, and the second semiconductor layer 204 can inject holes into the light-emitting layer 203. The electrons and holes can be combined into high-energy excitons in the light-emitting layer 203. The high-energy excitons are unstable and can easily transition to low-energy excitons and release energy. When releasing energy, photons are generated to emit light with a wavelength within a certain range.

[0120] It should be noted that, since the current always chooses the path with the lowest resistance value for conduction, the conduction of the current in the light-emitting unit is uneven. Figure 7 As shown in , the current of the second semiconductor layer 204 is crowded in the part close to the first connection electrode 1011. This causes uneven current distribution in the light-emitting layer 203, uneven light-emitting area, and reduced light-emitting efficiency. On the one hand, the current blocking layer 205 can block the current from diffusing toward the bottom of the first connection electrode 1011, so that most of the injected current flows to the light-emitting area outside the first connection electrode 1011, increasing the lateral transport of the current, reducing the current density flowing to the light-emitting area below the first connection electrode 1011, and effectively reducing the proportion of the current directly below the first connection electrode 1011 to the total injected current, thereby reducing the light loss caused by the metal light absorption and light blocking of the first connection electrode 1011. On the other hand, the current blocking layer 206 with high conductivity is used to guide the current to the area far away from the first connection electrode 1011, so that the current can be extended to the entire light-emitting unit as evenly as possible, so that each area of ​​the light-emitting layer 203 can emit light. Reduce the current crowding near the first connection electrode 1011 and improve the light output power.

[0121] In the examples of this application, please refer to Fig. 9 and Fig.10 , Fig. 9 is a bottom view of a light-emitting chip provided in another embodiment of the present application, Fig.10 yes Fig. 9 The schematic diagram of the film structure of the light-emitting chip at A-A' is shown. In the case where there are multiple light-emitting units 200 in the light-emitting chip 000, two adjacent light-emitting units 200 in the multiple light-emitting units are respectively the first light-emitting unit 210 and the second light-emitting unit 220. Here, a bridge electrode 800 and an auxiliary insulating layer 900 are provided between the first light-emitting unit 210 and the second light-emitting unit 220.

[0122] The two ends of the bridge electrode 800 are respectively connected to the first semiconductor layer 202 of the first light-emitting unit 210 and the current spreading layer 206 of the second light-emitting unit 220, and the auxiliary insulating layer 900 is located on the side of the bridge electrode 800 facing the substrate 100. The auxiliary insulating layer 900 is used to block the electrical connection between the bridge electrode 800 and other layers of the first light-emitting unit 210 and the second light-emitting unit 220. The main material of the bridge electrode is chromium (Cr), titanium (Ti), aluminum (Al), nickel (Ni), platinum (Pt), gold (Au) and other metals, with a thickness of 1 micron to 3 microns; the main material of the auxiliary insulating layer 900 is silicon dioxide, with a thickness of 100 angstroms to 2000 angstroms.

[0123] The scheme of connecting the first light-emitting unit 210 and the second light-emitting unit 220 using the bridge electrode 800 is used to realize a high-voltage light-emitting chip and improve the performance of the light-emitting chip. The high-voltage light-emitting chip achieves a higher voltage by combining multiple light-emitting units 200 on the same chip and connecting multiple light-emitting units 200 in series through the bridge electrode 800. The high-voltage chip has a higher voltage than the conventional chip, and the required driving current is lower under the same power consumption requirement, and the photoelectric conversion efficiency is high, which can reduce power consumption loss and reduce heat generation.

[0124] For example, in the process of driving the light-emitting chip 000 to emit light, if the voltage to be applied to the driving light-emitting chip 000 is 3 volts, the light-emitting chip 000 needs to include a light-emitting unit 200; if the voltage to be applied to the driving light-emitting chip 000 is 6 volts, the light-emitting chip 000 needs to include two light-emitting units 200, and the two light-emitting units 200 are connected in series through a bridge electrode 800; if the voltage to be applied to the driving light-emitting chip 000 is 9 volts, the light-emitting chip 000 needs to include three light-emitting units 200, and every two adjacent light-emitting units 200 need to be connected in series through a bridge electrode 800; if the voltage to be applied to the driving light-emitting chip 000 is 9 volts, the light-emitting chip 000 needs to include three light-emitting units 200, and every two adjacent light-emitting units 200 need to be connected in series through a bridge electrode 800; When the voltage applied to the driving light-emitting chip 000 is 12 volts, the light-emitting chip 000 needs to include four light-emitting units 200, and every two adjacent light-emitting units 200 need to be connected in series through a bridge electrode 800; when the voltage applied to the driving light-emitting chip 000 is 18 volts, the light-emitting chip 000 needs to include six light-emitting units 200, and every two adjacent light-emitting units 200 need to be connected in series through a bridge electrode 800; when the voltage applied to the driving light-emitting chip 000 is 24 volts, the light-emitting chip 000 needs to include eight light-emitting units 200, and every two adjacent light-emitting units 200 need to be connected in series through a bridge electrode 800.

[0125] Optional, such as Fig.10As shown, the light emitting chip 000 further includes a first welding electrode 1010 and a second welding electrode 1020. The first welding electrode 1010 and the second welding electrode 1020 are both distributed on the side of the light emitting unit 200 away from the substrate 100, and the first welding electrode 1010 and the second welding electrode 1020 overlap different positions of the light emitting unit 200 respectively.

[0126] Exemplarily, when the light emitting chip 000 includes one light emitting unit 200, the first welding electrode 1010 overlaps the current spreading layer 206 in the light emitting unit 200, and the second welding electrode 1020 overlaps the first semiconductor layer 202 in the light emitting unit 200. When the light emitting chip 000 includes multiple light emitting units 200, the first welding electrode 1010 overlaps the current spreading layer 206 in one light emitting unit 200 distributed at the outermost side, and the second welding electrode 1020 overlaps the first semiconductor layer 202 in another light emitting unit 200 distributed at the outermost side.

[0127] In the present application, the first welding electrode 1010 and the second welding electrode 1020 may be evenly distributed on the side of the second protective layer 700 away from the substrate 100. The first welding electrode 1010 may sequentially penetrate the second protective layer 700, the reflective film layer 500 and the insulating protective layer 600 and then overlap the current spreading layer 206 in the corresponding light-emitting unit 200; the second welding electrode 1020 may sequentially penetrate the second protective layer 700, the reflective film layer 500 and the insulating protective layer 600 and then overlap the first semiconductor layer 202 in the corresponding light-emitting unit 200.

[0128] Among them, the main materials of the first welding electrode 1010 and the second welding electrode 1020 are metals such as chromium (Cr), titanium (Ti), aluminum (Al), nickel (Ni), platinum (Pt), gold (Au), tin (Sn), silver (Ag), and copper (Cu), with a thickness of 0.8 microns to 30 microns.

[0129] In the present application, the first welding electrode 1010 can be used as an anode, and the second welding electrode 1020 can be used as a cathode. In this way, after the first welding electrode 1010 and the second welding electrode 1020 are connected to a signal, the light-emitting layer 203 in the light-emitting unit 200 can emit light.

[0130] Optionally, in order to ensure that the first welding electrode 1010 can better overlap with the current spreading layer 206 in the corresponding light-emitting unit 200, a first connecting electrode 1011 can be provided between the first welding electrode 1010 and the current spreading layer 206 in the corresponding light-emitting unit 200. Similarly, in order to ensure that the second welding electrode 1020 can better overlap with the first semiconductor layer 202 in the corresponding light-emitting unit 200, a second connecting electrode 1021 can be provided between the second welding electrode 1020 and the first semiconductor layer 202 in the corresponding light-emitting unit 200.

[0131] The main materials of the first connection electrode 1011 and the second connection electrode 1021 are metals such as chromium (Cr), titanium (Ti), aluminum (Al), nickel (Ni), platinum (Pt), and gold (Au), with a thickness of 1 micron to 3 microns. Here, because the first connection electrode 1011 and the second connection electrode 1021 have better conductivity, after the first connection electrode 1011 is connected to the current spreading layer 206 in the corresponding light-emitting unit 200, the first welding electrode 1010 and the current spreading layer 206 can be guaranteed to have good conductivity. After the second welding electrode 1020 is connected to the first semiconductor layer 202 in the corresponding light-emitting unit 200 through the second connection electrode 1021, the second welding electrode 1020 and the first semiconductor layer 202 can also be guaranteed to have good conductivity.

[0132] Optional, such as Fig.11 As shown, Fig.11 yes Fig. 9 In the top view of the light-emitting chip shown, the shape of the orthographic projection of the first welding electrode 1010 on the substrate 100 is different from the shape of the orthographic projection of the second welding electrode 1020 on the substrate 100, that is, the first welding electrode 1010 and the second welding electrode 1020 can be asymmetric structures. In the asymmetric structure design, the shape of the orthographic projection of the first welding electrode 1010 on the substrate 100 is a rectangle, and the shape of the orthographic projection of the second welding electrode 1020 on the substrate 100 is a trapezoid. In the process of connecting the light-emitting chip to the driving backplane, the asymmetric structure design can better distinguish the first welding electrode 1010 and the second welding electrode 1020.

[0133] It should be noted that in other possible implementations, such as Fig.12 and Fig.13 As shown, Fig.12 is a bottom view of another light-emitting chip provided in another embodiment of the present application, Fig.13 yes Fig.12In the top view of the light-emitting chip shown, the shape of the orthographic projection of the first welding electrode 1010 on the substrate 100 may also be the same as the shape of the orthographic projection of the second welding electrode 1020 on the substrate 100, that is, the first welding electrode 1010 and the second welding electrode 1020 may be symmetrical structures. For example, in the symmetrical structure design, the shape of the orthographic projection of the first welding electrode 1010 on the substrate 100 is a rectangle, and the shape of the orthographic projection of the second welding electrode 1020 on the substrate 100 is also a rectangle.

[0134] In this application, if Fig.10 As shown in , the substrate 100 may include a sapphire substrate 101 and a transition layer 103. The main material of the sapphire substrate 101 is aluminum oxide, with a thickness of 70 microns to 200 microns. The main material of the transition layer 103 is gallium nitride, with a thickness of 100 angstroms to 1000 angstroms. The transition layer 103 is used to solve the lattice constant mismatch problem between the sapphire substrate 101 and the light-emitting unit.

[0135] In order to increase the probability of light being emitted from the substrate 100 and effectively improve the light extraction efficiency of the light-emitting chip, a patterning process is performed on the side of the sapphire substrate 101 facing the transition layer 103 to form a patterned structure 102. The patterned structure 102 is formed on the sapphire substrate by etching technology through a graphic mask to produce a periodic array pattern with a concave-convex structure at the micrometer or nanometer level. In the present application, an inductively coupled plasma etching technology can be used to produce a conical patterned structure on a sapphire substrate. Among them, the pattern spacing size of the micrometer-level patterned structure is set to 3 micrometers to 4 micrometers, and the pattern spacing size of the nanometer-level patterned structure is set to 1 micrometer to 2 micrometers.

[0136] In summary, the light-emitting chip provided in the embodiment of the present application includes: a substrate, a light-emitting unit, a dimming film layer and a first protective layer. By providing a first protective layer with a higher hardness on the side of the dimming film layer away from the substrate, the risk of mechanical damage to the dimming film layer can be effectively reduced. For example, in the process of using a needle-piercing type crystal bonding machine to connect the light-emitting chip and the driving backplane, the first protective layer with a higher hardness can better bear the pressing force applied by the ejector pin in the needle-piercing type crystal bonding machine to ensure that the probability of the dimming film layer being damaged by the pressing force applied by the ejector pin is low, thereby effectively improving the light emission effect of the light-emitting chip.

[0137] The present application also provides a method for manufacturing a light-emitting chip. The method for manufacturing a light-emitting chip is used to manufacture Fig.10 The light-emitting chip is shown. The manufacturing method of the light-emitting chip includes:

[0138] Step S01: Provide a sapphire substrate 101. Fig.14As shown, the sapphire substrate 101 is annealed to improve the flatness and optical properties of the sapphire substrate. Afterwards, the annealed sapphire substrate 101 is trimmed by chamfering.

[0139] Step S02: fabricating a patterned structure 102 on a sapphire substrate 101. Fig.15 As shown, a patterned mask is used to perform patterning on one side of the sapphire substrate 101 using an etching technique to form a patterned structure 102. Fabricating the patterned structure 102 on the sapphire substrate 101 can effectively improve the light extraction efficiency of the light emitting chip.

[0140] Step S03: forming a transition layer 103. Fig.16 As shown, a transition layer 103 is formed on one side of a sapphire substrate 101 where a patterned structure 102 is formed by metal-organic chemical vapor deposition (MOCVD).

[0141] Step S04: forming a tensile stress epitaxial layer 201. Fig.17 As shown, a tensile stress epitaxial layer 201 is formed on the side of the transition layer 103 facing away from the sapphire substrate 101 by MOCVD.

[0142] Step S05: forming a first semiconductor layer 202. Fig.18 As shown, the first semiconductor layer 202 is formed on the side of the tensile stress epitaxial layer 201 facing away from the substrate 100 by MOCVD.

[0143] Step S06: forming the light emitting layer 203. Fig.19 As shown, the light emitting layer 203 is formed on the side of the first semiconductor layer 202 facing away from the substrate 100 by using MOCVD.

[0144] Step S07: forming a second semiconductor layer 204. Fig. 20 As shown, the second semiconductor layer 204 is formed on the side of the light emitting layer 203 facing away from the substrate 100 by using MOCVD.

[0145] Step S08: forming a current blocking layer 205. Fig.21 As shown, a current blocking layer 205 is formed on a side of the second semiconductor layer 204 facing away from the substrate 100 by using MOCVD.

[0146] Step S09: forming a current spreading layer 206. Fig. 22 As shown, a current spreading layer 206 is formed on the side of the current blocking layer 205 facing away from the substrate 100 by a sputtering process. At this time, a complete light emitting unit 200 is formed.

[0147] Step S10: forming an auxiliary insulating layer 900. Fig.23 As shown, an auxiliary insulating layer 900 is formed between two adjacent light emitting units by using photolithography and deposition processes.

[0148] Step S11: forming a bridging electrode 800. Fig.24 As shown, the auxiliary insulating layer 900 is formed on the side of the auxiliary insulating layer 900 facing away from the substrate between two adjacent light-emitting units by using photolithography and deposition processes, and overlaps the two light-emitting units.

[0149] Step S12: forming a first connection electrode 1011 and a second connection electrode 1021. Fig.25 As shown, a first connection electrode 1011 is formed on the side of the current spreading layer 206 of the outermost light-emitting unit away from the substrate 100 by using photolithography and deposition processes, and a second connection electrode 1021 is formed on the side of the first semiconductor layer 202 of the other outermost light-emitting unit away from the substrate 100.

[0150] Step S13: forming an insulating protection layer 600. Fig.26 As shown, an insulating protection layer 600 is formed on a side of the light emitting unit away from the substrate 100 by using photolithography and deposition processes.

[0151] Step S14: forming a reflective film layer 500. Fig. 27 As shown, a reflective film layer 500 is formed on the side of the insulating protection layer 600 facing away from the substrate 100 by using an evaporation process.

[0152] Step S15: forming a second protective layer 700. Fig.28 As shown, a second protective layer 700 is formed on the side of the reflective film layer 500 facing away from the substrate 100 by using photolithography and deposition processes.

[0153] Step S16: forming the first welding electrode 1010 and the second welding electrode 1020. Fig.29 As shown, a first welding electrode 1010 is formed on a side of the second protective layer 700 away from the substrate 100 by using an evaporation process, and the first welding electrode 1010 sequentially penetrates the second protective layer 700, the reflective film layer 500 and the insulating protective layer 600 and overlaps the first connecting electrode 1011. A second welding electrode 1010 is formed on a side of the second protective layer 700 away from the substrate 100 by using an evaporation process, and the first welding electrode 1010 sequentially penetrates the second protective layer 700, the reflective film layer 500 and the insulating protective layer 600 and overlaps the second connecting electrode 1021.

[0154] Step S17: forming a dimming film layer 300 and a first protective layer 400. Fig.10As shown, a dimming film layer 300 is formed on a side of the substrate 100 away from the light-emitting unit 200 through evaporation and deposition processes.

[0155] It should be noted that, when the hardness of the second inorganic layer 302 of the outermost dimming layer group 300a of the dimming film layer 300 is greater than that of the first inorganic layer 301, the first protective layer 400 and the second inorganic layer 302 of the outermost dimming layer group 300a are the same film layer, and there is no need to form the first protective layer 400 separately. When the hardness of the second inorganic layer 302 of the outermost dimming layer group 300a of the dimming film layer 300 is less than that of the first inorganic layer 301, it is necessary to form the first protective layer 400 on the side of the dimming film layer 300 away from the substrate 100.

[0156] It should also be noted that through the above steps S01 to S17, the following Fig.10 The light-emitting chip shown.

[0157] The embodiment of the present application further provides a light-emitting substrate, which may include a driving backplane, and Figure 1 , Figure 3 , Figure 5 , Figure 6 or Fig.10 The multiple light-emitting chips 000 are shown. Since the dimming film layer 300 in the light-emitting chip 000 can increase the range of the divergence angle of the light emitted by the light-emitting chip 000 to 155°~175°, the light-emitting substrate using the light-emitting chip 000 can reduce the number of light-emitting chips 000 used while avoiding problems such as lamp shadows and low resolution, that is, the solution of one driver IC controlling multiple light-emitting chips 000 is replaced by a solution of one driver IC controlling one light-emitting chip 000, thereby reducing the cost of the light-emitting substrate. In addition, the increase in the divergence angle of the light emitted by the light-emitting chip 000 reduces the light mixing distance of the light-emitting substrate using the light-emitting chip 000, which can make the light-emitting substrate thinner and lighter.

[0158] The embodiment of the present application also provides a display device, which can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a laptop computer, a digital photo frame, a navigator, etc. The display device may include the light-emitting substrate in the above embodiment. Here, the light-emitting substrate can be directly used as a display panel for display, or it can be used as a backlight panel. In the case where the light-emitting substrate is used as a backlight panel, it is necessary to set the light-emitting substrate on the back of the liquid crystal display panel so that the light-emitting substrate can provide a light source for the liquid crystal display panel, thereby enabling the liquid crystal display panel to display the corresponding picture.

[0159] It should be noted that in the accompanying drawings, the sizes of layers and regions may be exaggerated for clarity of illustration. It is also understood that when an element or layer is referred to as being "on" another element or layer, it may be directly on the other element, or there may be an intermediate layer. In addition, it is understood that when an element or layer is referred to as being "under" another element or layer, it may be directly under the other element, or there may be more than one intermediate layer or element. In addition, it is also understood that when a layer or element is referred to as being "between" two layers or two elements, it may be the only layer between the two layers or two elements, or there may also be more than one intermediate layer or element. Similar reference numerals throughout the text indicate similar elements.

[0160] In the present application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance. The term "plurality" refers to two or more than two, unless otherwise clearly defined.

[0161] The above description is only an optional embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A light-emitting chip, characterized in that: include: A substrate (100), a light-emitting unit (200), a dimming film layer (300) and a first protective layer (400); The light-emitting unit (200) is located on one side of the substrate (100), and the light-emitting side of the light-emitting unit faces the substrate (100); The dimming film layer (300) is located on a side of the substrate (100) away from the light-emitting unit (200), and the dimming film layer (300) is used to increase the divergence angle of light emitted by the light-emitting unit (200) and passing through the substrate (100); The first protective layer (400) is located on a side of the dimming film layer (300) facing away from the substrate (100); Wherein, the hardness of the first protective layer (400) is higher than the hardness of the dimming film layer (300).

2. The light-emitting chip according to claim 1, characterized in that: The dimming film layer (300) comprises: a plurality of first inorganic layers (301) and a plurality of second inorganic layers (302) which are stacked, wherein the plurality of first inorganic layers (301) and the plurality of second inorganic layers (302) are arranged alternately; In the dimming film layer (300), a first inorganic layer (301) and a second inorganic layer (302) that are adjacently distributed are used to form a dimming layer group (300a); in the same dimming layer group (300a), the first inorganic layer (301) is closer to the substrate (100) than the second inorganic layer (302); The hardness of the first protective layer (400) is higher than the hardness of at least one of the first inorganic layer (301) and the second inorganic layer (302).

3. The light-emitting chip according to claim 2, characterized in that: The hardness of the second inorganic layer (302) is higher than that of the first inorganic layer (301), and the first protective layer (400) and the second inorganic layer (302) in the outermost dimming layer group (300a) are the same film layer.

4. The light-emitting chip according to claim 2, characterized in that: The hardness of the first inorganic layer (301) is higher than that of the second inorganic layer (302); the first protective layer (400) is in contact with the second inorganic layer (302) in the outermost dimming layer group (300a); and the material of the first protective layer (400) is the same as that of the first inorganic layer (301).

5. The light-emitting chip according to claim 2, characterized in that: The hardness of the first protective layer (400) is higher than the hardness of the first inorganic layer (301) and higher than the hardness of the second inorganic layer (302), and the first protective layer (400) is in contact with the second inorganic layer (302) in the outermost dimming layer group (300a).

6. The light-emitting chip according to claim 4 or 5, characterized in that: The thickness of the first protective layer (400) is greater than or equal to the thickness of the second inorganic layer (302) in the outermost dimming layer group (300a).

7. The light-emitting chip according to any one of claims 2 to 5, characterized in that: The material of the first protective layer (400) includes any one of niobium pentoxide, hafnium dioxide and zirconium oxide.

8. The light-emitting chip according to any one of claims 2 to 5, characterized in that: The number of the dimming layer groups (300a) in the dimming film layer (300) ranges from 18 to 39.

9. The light-emitting chip according to any one of claims 2 to 5, characterized in that: The light-emitting chip further comprises: a reflective film layer (500), wherein the reflective film layer (500) is located on a side of the light-emitting unit (200) facing away from the substrate (100).

10. The light emitting chip according to claim 9, characterized in that: A portion of the reflective film layer (500) is in contact with a side of the light-emitting unit (200) facing away from the substrate (100); Alternatively, the light-emitting chip further comprises: an insulating protective layer (600), the insulating protective layer (600) being located on a side of the light-emitting unit (200) facing away from the substrate (100), and a portion of the insulating protective layer (600) being in contact with a side of the light-emitting unit (200) facing away from the substrate (100), and the reflective film layer (500) being located on a side of the insulating protective layer (600) facing away from the substrate (100).

11. The light emitting chip according to claim 10, characterized in that: The light-emitting chip further comprises: a second protective layer (700), the second protective layer (700) being located on a side of the reflective film layer (500) facing away from the substrate (100); Wherein, the hardness of the second protective layer (700) is higher than the hardness of the reflective film layer (500).

12. The light-emitting chip according to any one of claims 1 to 5, characterized in that: The number of the light-emitting units (200) is at least one, and the light-emitting unit (200) comprises a first semiconductor layer (202), a light-emitting layer (203), a second semiconductor layer (204), a current blocking layer (205) and a current spreading layer (206) which are stacked in a direction perpendicular to and away from the substrate (100).

13. The light emitting chip according to claim 12, characterized in that: When there are multiple light-emitting units (200), two adjacent light-emitting units (200) among the multiple light-emitting units (200) are respectively a first light-emitting unit (210) and a second light-emitting unit (220); The light-emitting chip further comprises: a bridging electrode (800) and an auxiliary insulating layer (900); The two ends of the bridging electrode (800) are respectively connected to the first semiconductor layer (202) of the first light-emitting unit (210) and the current spreading layer (206) of the second light-emitting unit (220), and the auxiliary insulating layer (900) is located on a side of the bridging electrode (800) facing the substrate (100).

14. The light-emitting chip according to any one of claims 1 to 5, characterized in that: The light-emitting chip further comprises: a first welding electrode (1010) and a second welding electrode (1020), wherein the first welding electrode (1010) and the second welding electrode (1020) are both distributed on a side of the light-emitting unit (200) away from the substrate (100), and the first welding electrode (1010) and the second welding electrode (1020) are respectively overlapped with different positions of the light-emitting unit (200); The shape of the orthographic projection of the first welding electrode (1010) on the substrate (100) is different from the shape of the orthographic projection of the second welding electrode (1020) on the substrate (100).

15. A light-emitting substrate, characterized in that: include: A driving backplane, and a plurality of light-emitting chips distributed on the driving backplane, wherein the light-emitting chip is the light-emitting chip according to any one of claims 1 to 14.

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