Thermal management system and vehicle

Abstract

A thermal management system includes a power semiconductor, i.e., a heat generation unit. The power semiconductor has a heat dissipation path. The heat dissipation path is configured so as to transfer heat from the power semiconductor to other portions other than the power semiconductor. As the temperature of the power semiconductor rises, the heat dissipation amount of the power semiconductor passing through the heat dissipation path increases.

Description

Technical Field

[0001] The present disclosure relates to thermal management systems and vehicles. Background Art

[0002] International Publication No. 2005 / 071824 discloses a technique for cooling a semiconductor device by controlling the temperature of a refrigerant that circulates in a flow path provided in a housing of the semiconductor device.

[0003] In recent years, in the fields of automobiles and the like, thermal management systems have been proposed that perform not only heat dissipation management but also creative heat management. For example, in the system described in the above-mentioned International Publication No. 2005 / 071824, it may be possible to utilize the heat generated by a semiconductor device for heating other devices. However, in International Publication No. 2005 / 071824, only thermal management related to heat dissipation of semiconductor devices (heat dissipation management) is mentioned, and thermal management utilizing the heat generated by semiconductor devices (creative heat management) is not mentioned. Therefore, creative heat management may not be appropriately performed depending on the situation. Summary of the invention

[0004] The present disclosure is made to solve the above-mentioned problems and aims to appropriately perform both heat dissipation management and heat creation management.

[0005] A heat management system according to one aspect of the present disclosure includes a heat generating portion having a plurality of heat dissipation paths.

[0006] The plurality of heat dissipation paths include a first heat dissipation path and a second heat dissipation path.

[0007] The first heat dissipation path is configured to transfer heat from the heat generating portion to a portion other than the heat generating portion.

[0008] As the temperature of the heat generating portion increases, the amount of heat dissipated by the heat generating portion through the second heat dissipation path increases.

[0009] According to another aspect of the present disclosure, a vehicle including the above-mentioned system is provided.

[0010] According to the present disclosure, both heat dissipation management and heat creation management can be appropriately performed. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Features, advantages, and technical and industrial significance of exemplary embodiments of the present invention will be described hereinafter with reference to the accompanying drawings, wherein like reference numerals represent like elements, and wherein:

[0012] Figure 1 is a diagram showing a thermal management system according to an embodiment of the present disclosure.

[0013] Figure 2 This is a diagram showing the state of the heat management system when the heat generating portion is at a high temperature.

[0014] Figure 3 This is a diagram showing the state of the heat management system when the heat generating portion is at a low temperature.

[0015] Figure 4 It is a diagram showing an example of the planar structure of the second heat dissipation path.

[0016] Figure 5 It is a diagram showing a modified example of the planar structure of the second heat dissipation path.

[0017] Figure 6 It means that it is applied Figure 1 A diagram of a vehicle showing the heat dissipation structure. DETAILED DESCRIPTION

[0018] Embodiments of the present disclosure are described in detail with reference to the accompanying drawings. In the accompanying drawings, the same figure marks are given to the same or corresponding parts, and their descriptions are not repeated. In the figures used below, among the X-axis, Y-axis and Z-axis that are orthogonal to each other, the Z-axis shows the thickness direction of the substrate. Hereinafter, the direction indicated by the arrows of the X-axis, Y-axis and Z-axis is represented as "+", and the direction opposite to the arrow is represented as "-". For the two main surfaces (front and back) of a plate-like component (or its laminate), the surface in the +Z direction is sometimes referred to as the "first surface", and the surface in the -Z direction is referred to as the "second surface".

[0019] Figure 1 : is a diagram showing a thermal management system according to the present embodiment. Figure 1 The -Z direction in the figure corresponds to the direction of gravity (vertically downward). Figure 1 The thermal management system includes a semiconductor power device 10 including a power semiconductor 11 (heat generating portion), a heat dissipation path 30 (first heat dissipation path) and a heat dissipation path 40 (second heat dissipation path) of the power semiconductor 11 .

[0020] In addition to the power semiconductor 11, the semiconductor power device 10 also includes a stacked substrate in which substrates 13-15 are stacked in the Z direction and a cooler 16. Substrate 15, substrate 14, and substrate 13 are stacked in sequence from the -Z side. Substrates 13 and 15 are, for example, substrates made of metal. Substrates 13 and 15 can be copper plates. Substrate 14 is an insulating substrate made of ceramic. As examples of ceramic insulating substrates, aluminum oxide substrates, aluminum nitride substrates, and silicon nitride substrates can be cited. The above-mentioned stacked substrate is, for example, an insulating heat dissipation circuit substrate having a structure in which a ceramic substrate is sandwiched between two metal substrates. The ceramic substrate and the two metal substrates can be bonded and integrated by active metal bonding (AMB) or direct bonding (DCB).

[0021] The substrate 13 includes an electronic circuit, and a power semiconductor 11 is mounted on the first surface of the substrate 13 via a bonding material 12. Examples of the bonding material 12 include solder and a conductive adhesive material. The semiconductor power device 10 is configured to perform power conversion and / or control using the above-mentioned electronic circuit including the power semiconductor 11. Examples of the power semiconductor 11 include power transistors such as IGBTs, MOSFETs, or bipolar power transistors. Examples of semiconductor materials include Si, SiC, and GaN.

[0022] A cooler 16 is bonded to the second surface of the substrate 15. Examples of bonding materials for the cooler 16 include solder and grease. The cooler 16 is configured to transfer heat received from the laminated substrate to the heat dissipation path 30. The cooler 16 is formed of, for example, metal. The cooler 16 has a plurality of protrusions protruding toward the heat dissipation path 30.

[0023] The heat dissipation path 30 includes a tube body 31 and a heat insulating material 33. The tube body 31 is, for example, a cylindrical member made of metal. The heat insulating material 33 is provided on the outer surface of the tube body 31 on the -Z side. As a result, heat exchange of the tube body 31 on the -Z side is suppressed. However, the present invention is not limited to this, and a heat dissipation material may be provided instead of the heat insulating material 33 to promote heat dissipation of the tube body 31 on the -Z side. The tube body 31 accommodates a heat medium 30a and cooling fins 32 in the tube. The heat medium 30a flows, for example, toward the +Y side in the tube body 31. The outer surface of the +Z side of the tube body 31 is in contact with each protrusion of the cooler 16. The heat from the cooler 16 is transferred to the heat medium 30a and the cooling fins 32 via the tube body 31. Examples of the heat medium 30a include water, antifreeze, organic fluorine compounds, carbon dioxide, ammonia, and the like.

[0024] The cooling fin 32 is, for example, a metal plate bent into a wave shape (corrugated fin). The cooling fin 32 is formed to be able to reciprocate between the inner surface of the +Z side and the inner surface of the -Z side of the tube body 31. This shape promotes heat exchange between the cooling fin 32 and the heat medium 30a. The cooling fin 32 is in contact with a portion of the inner surface of the +Z side of the tube body 31 that is opposite to the protrusion of the cooler 16. Thus, heat exchange between the cooling fin 32 and the cooler 16 is promoted.

[0025] The heat dissipation path 30 is configured to transfer heat from the power semiconductor 11 to other components (components other than the power semiconductor 11). Hereinafter, other components that exchange heat with the power semiconductor 11 via the heat dissipation path 30 are referred to as "target components". In this embodiment, the heat medium 30a flows in the flow path formed by the tube body 31. The heat medium 30a is connected to the power semiconductor 11 and the target component ( Figure 1 The details will be described later, but examples of target parts include vehicle-mounted batteries (see Figure 6 ).

[0026] Figure 1 The thermal management system shown also has a container 20 capable of performing heat exchange with the power semiconductor 11. The container 20 includes a metal part 21 (first metal part), a resin part 22 and a metal part 23 (second metal part). The metal part 21 is connected to the substrate 13. The metal part 21 performs heat exchange with the power semiconductor 11 via the substrate 13 and the bonding material 12. The metal part 21, the resin part 22 and the metal part 23 are connected and seal the internal space. The resin part 22 is located between the metal part 21 and the metal part 23. The container 20 accommodates the thermal expansion material M1, the high thermal conductivity material M2 and the low thermal conductivity material M3 in the sealed internal space. The thermal conductivity of the high thermal conductivity material M2 is higher than the thermal conductivity of the low thermal conductivity material M3. The thermal expansion material M1 has a thermal expansion coefficient higher than the thermal expansion coefficients of the low thermal conductivity material M3 and the high thermal conductivity material M2.

[0027] The thermal expansion material M1 changes its volume within the operating temperature range of the power semiconductor 11. The thermal expansion material M1 may have a melting point within the operating temperature range of the power semiconductor 11. For example, the thermal expansion material M1 is in a solid state at room temperature and liquefies as the temperature of the power semiconductor 11 rises. The volume of the thermal expansion material M1 increases due to liquefaction. Wax may be cited as an example of the thermal expansion material M1. The high thermal conductivity material M2 maintains high fluidity within the operating temperature range of the power semiconductor 11. The high thermal conductivity material M2 may be in a liquid state or a semi-solid state within the operating temperature range of the power semiconductor 11. The thermal conductivity of the high thermal conductivity material M2 may be greater than 50 W / m·K and less than 100 W / m·K, or may be approximately 80 W / m·K. Liquid sodium and heat dissipation grease may be cited as examples of the high thermal conductivity material M2. The low thermal conductivity material M3 maintains high fluidity within the operating temperature range of the power semiconductor 11. The low thermal conductivity material M3 may be a gas within the operating temperature range of the power semiconductor 11. The thermal conductivity of the low thermal conductive material M3 may be 0.01 W / m·K or more and 1.00 W / m·K or less, and may be about 0.02 W / m·K. Examples of the low thermal conductive material M3 include air, nitrogen, and argon. Since the thermal expansion material M1, the high thermal conductive material M2, and the low thermal conductive material M3 are in different states (solid / liquid / gas), separation is promoted and mixing is suppressed.

[0028] The heat dissipation path 40 includes metal components 41 and 42 and a variable thermal conductivity portion 43. The metal component 41 is, for example, a housing made of metal and functions as a heat dissipation portion for promoting heat dissipation. Although the details will be described later, an example of the metal component 41 includes a housing of an in-vehicle electronic device (see Figure 6). The semiconductor power device 10 is connected to the metal member 41 via the container 20. The semiconductor power device 10 is in contact with the metal portion 21. The metal member 41 is in contact with the metal portion 23. The resin portion 22 is not in contact with either the semiconductor power device 10 or the metal member 41.

[0029] The metal member 42 is a member made of metal formed into a rod or plate shape, for example. The metal member 42 is connected to the substrate 15, the cooler 16, the tube 31, and the metal portion 23 of the container 20. The metal member 42 transfers heat from the power semiconductor 11 to the variable thermal conductivity portion 43. The metal member 42 is connected to the metal member 41 via the variable thermal conductivity portion 43. The metal member 42 and the variable thermal conductivity portion 43 function as a thermal conductive portion that transfers heat from the power semiconductor 11 to the metal member 41 (heat dissipation portion). Moreover, the variable thermal conductivity portion 43 is configured so that the thermal conductivity becomes higher as the temperature of the power semiconductor 11 rises.

[0030] The thermal conductivity variable portion 43 includes the metal portion 23 of the container 20. In the container 20, the metal portion 21 is configured to transfer heat generated by the power semiconductor 11 to the thermal expansion material M1. The thermal expansion material M1 contracts and expands according to the temperature of the power semiconductor 11. The high thermal conductivity material M2 and the low thermal conductivity material M3 move in the container 20 according to the contraction / expansion of the thermal expansion material M1.

[0031] Figure 2 1 is a diagram showing the state of the thermal management system when the power semiconductor 11 is in a high load state. When the load of the power semiconductor 11 becomes high, the temperature of the power semiconductor 11 rises. Figure 2 As shown, the thermal expansion material M1 expands as the temperature of the power semiconductor 11 rises. In addition, due to the force generated by the expansion of the thermal expansion material M1, the high thermal conductivity material M2 moves in the container 20 and is contained in the thermal conductivity variable portion 43. The low thermal conductivity material M3 is compressed and moves in the container 20, so that it is not contained in the thermal conductivity variable portion 43. The low thermal conductivity material M3 is pushed to the end of the container 20. As a result, the thermal conductivity of the thermal conductivity variable portion 43 becomes higher. The amount of heat dissipated by the power semiconductor 11 through the heat dissipation path 40 increases. The heat from the power semiconductor 11 is transferred to the metal member 41 via the metal member 42 and the thermal conductivity variable portion 43 (high thermal conductivity material M2). By heat dissipating the power semiconductor 11 through both the heat dissipation path 30 and the heat dissipation path 40, the cooling of the power semiconductor 11 is promoted. As described above, the thermal conductivity of the thermal conductivity variable portion 43 becomes higher as the temperature of the power semiconductor 11 rises. Therefore, as the temperature of the power semiconductor 11 increases, the amount of heat transferred from the power semiconductor 11 to the metal member 41 (heat dissipation portion) increases. Thus, when the temperature of the power semiconductor 11 is high, cooling of the power semiconductor 11 is promoted.

[0032] Figure 31 is a diagram showing the state of the thermal management system when the power semiconductor 11 is in a low load state. When the load of the power semiconductor 11 is low, the temperature of the power semiconductor 11 also becomes low. Figure 3 As shown, as the temperature of the power semiconductor 11 decreases, the thermal expansion material M1 contracts. Then, due to the force generated by the contraction of the thermal expansion material M1, the low thermal conductivity material M3 expands and moves in the container 20, so that it is included in the thermal conductivity variable part 43. The high thermal conductivity material M2 moves in the container 20 and is not included in the thermal conductivity variable part 43. As a result, the thermal conductivity of the thermal conductivity variable part 43 becomes lower. It is difficult for heat to be transferred from the power semiconductor 11 to the metal member 41. Therefore, the amount of heat dissipated by the power semiconductor 11 through the heat dissipation path 40 is reduced. The thermal conductivity variable part 43 (low thermal conductivity material M3) can also be used for heat insulation. The low thermal conductivity material M3 can prevent the heat dissipation of the power semiconductor 11 through the heat dissipation path 40. Since the amount of heat dissipated by the power semiconductor 11 through the heat dissipation path 40 is reduced, the amount of heat transferred from the power semiconductor 11 to the heat dissipation path 30 increases. Therefore, the temperature of the target component is easily increased by the heat generated by the power semiconductor 11.

[0033] As described above, the power semiconductor 11 (heat generating portion) has a plurality of heat dissipation paths (heat dissipation path 30 and heat dissipation path 40). By transferring the heat from the power semiconductor 11 to other parts (parts other than the power semiconductor 11) via the heat dissipation path 30, the heat generated by the power semiconductor 11 can be used to increase the temperature of other parts. In addition, by dissipating the heat of the power semiconductor 11 simultaneously via a plurality of heat dissipation paths, the total heat dissipation of the power semiconductor 11 increases, and the power semiconductor 11 becomes easier to cool. However, when the heat dissipation of the power semiconductor 11 is performed by a plurality of heat dissipation paths, the heat dissipation of each path decreases. Therefore, in the case where the heat dissipation of the power semiconductor 11 is performed by the heat dissipation path 30 and the heat dissipation path 40, the amount of heat transferred to other parts via the heat dissipation path 30 is less than the case where the heat dissipation of the power semiconductor 11 is performed only by the heat dissipation path 30. As a result, the temperature of other parts is not easy to rise.

[0034] Therefore, in the thermal management system of the present embodiment, the amount of heat dissipated by the power semiconductor 11 through the heat dissipation path 40 increases as the temperature of the power semiconductor 11 increases. That is, the amount of heat dissipated by the power semiconductor 11 through the heat dissipation path 40 is less when the temperature of the power semiconductor 11 is low than when the temperature of the power semiconductor 11 is high (see Figure 2 and Figure 3). When the heat released by the power semiconductor 11 becomes difficult to be transferred to the heat dissipation path 40, the amount of heat transferred from the power semiconductor 11 to the heat dissipation path 30 increases. When the amount of heat dissipated by the power semiconductor 11 through the heat dissipation path 40 decreases, the amount of heat dissipated by the power semiconductor 11 through the heat dissipation path 30 increases. Since the power semiconductor 11 and other parts (including the object parts) are thermally connected via the heat dissipation path 30, when the temperature of the power semiconductor 11 is low, the temperature of the other parts is likely to be low. Therefore, when the temperature of the power semiconductor 11 is low, it is likely that other parts are required to heat up (create heat). In the above system, when the temperature of the power semiconductor 11 is low, the amount of heat transferred from the power semiconductor 11 to other parts via the heat dissipation path 30 can be increased, and the temperature increase of other parts can be promoted. On the other hand, when the temperature of the power semiconductor 11 is high, it is likely that the power semiconductor 11 is required to be cooled. In the above system, as the temperature of the power semiconductor 11 increases, the amount of heat dissipated by the power semiconductor 11 through the heat dissipation path 40 increases. As a result, when the temperature of the power semiconductor 11 is high, the total heat dissipation of the power semiconductor 11 increases, promoting the cooling of the power semiconductor 11. As described above, according to the above system, both heat dissipation management and heat creation management can be appropriately performed.

[0035] In the thermal management system of this embodiment, the thermal expansion material M1 displaces the high thermal conductivity material M2 and the low thermal conductivity material M3 according to the temperature of the power semiconductor 11. The thermal expansion material M1 stretches or presses each thermal conductive material by contraction or expansion. In addition, when the thermal conductivity variable portion 43 includes the high thermal conductivity material M2, the thermal conductivity of the thermal conductivity variable portion 43 becomes higher (see Figure 2 ), when the thermal conductivity variable portion 43 includes the low thermal conductivity material M3, the thermal conductivity of the thermal conductivity variable portion 43 becomes low (refer to Figure 3 ). In such a structure, the high thermal conductivity material M2 and the low thermal conductivity material M3 move due to physical phenomena, so electronic control and power supply for moving the high thermal conductivity material M2 and the low thermal conductivity material M3 are not required.

[0036] Figure 1The container 20 shown includes a metal portion 21 (first metal portion), a resin portion 22, and a metal portion 23 (second metal portion). Generally speaking, metal has high thermal conductivity and resin has high thermal insulation. Since the container 20 has the metal portion 21, the heat generated by the power semiconductor 11 is easily transferred to the thermal expansion material M1. As a result, the thermal expansion material M1 is easily deformed (contracted and expanded) according to the temperature of the power semiconductor 11. In addition, since the container 20 has the metal portion 23, it is possible to suppress the container 20 (the cylinder that accommodates the thermal expansion material and each thermal conductive material) from hindering the heat conduction of the power semiconductor 11. In addition, since the container 20 has the resin portion 22, the heat exchange between the thermal expansion material M1 and the outside air is suppressed. When the heat exchange between the thermal expansion material M1 and the outside air becomes dominant over the heat exchange between the thermal expansion material M1 and the power semiconductor 11, the thermal expansion material M1 may not be in a state corresponding to the temperature of the power semiconductor 11. Since the heat exchange between the thermal expansion material M1 and the outside air is suppressed by the resin portion 22, the thermal expansion material M1 is easily in a state corresponding to the temperature of the power semiconductor 11.

[0037] Figure 4 2 is a diagram showing an example of a planar structure of the heat dissipation path 40 (second heat dissipation path). Figure 4 As shown, the heat dissipation path 40 may include a metal member 42 formed in a rod shape. The semiconductor power device 10, the metal member 42, the thermal conductivity variable portion 43, and the metal member 41 may be connected in sequence. However, the shapes and numbers of the metal member 42 and the thermal conductivity variable portion 43 may be appropriately changed.

[0038] Figure 5 FIG. 2 is a diagram showing a modified example of the planar structure of the second heat dissipation path. Figure 5 As shown, the second heat dissipation path may include four metal members 42A-42D formed in a plate shape. In this modification, one end of each of the metal members 42A-42D is connected to the semiconductor power device 10. Moreover, the other ends of the metal members 42A, 42B, 42C, and 42D are connected to the metal member 41 via the thermally conductive variable portions 43A, 43B, 43C, and 43D, respectively. The thermally conductive variable portions 43A-43D each have, for example, Figure 1 The thermal conductivity variable portion 43 shown in FIG. Figure 5 The structure shown in FIG. 1 is obtained by removing the metal members 42C, 42D and the thermal conductivity variable parts 43C, 43D. Alternatively, the structure may be Figure 5 The structure shown is a structure in which the metal members 42B and 42D and the thermal conductivity variable parts 43B and 43D are removed.

[0039] Figure 6 It means that it is applied Figure 1Referring to FIG. Figure 6 The thermal management system 100a is mounted on, for example, a vehicle 100. The vehicle 100 is an electrified vehicle (xEV) that can travel by power discharged from a battery 200 (power storage device) described later. The vehicle 100 may be, for example, a BEV (battery electric vehicle) or a PHEV (plug-in hybrid electric vehicle).

[0040] The thermal management system 100a includes a first circuit 110, a second circuit 120, a third circuit 130, a condenser 140, a refrigeration cycle 150, a refrigerator 160, a five-way valve 310, and a storage tank (R / T) 320. The five-way valve 310 and the storage tank 320 are shared by the second circuit 120 and the third circuit 130. The condenser 140, the refrigeration cycle 150, and the refrigerator 160 are arranged between the first circuit 110 and the second circuit 120, and function as a heat transfer mechanism.

[0041] The first circuit 110 includes a pump 111, an electric heater 112, a three-way valve 113, a heater core 114, a reservoir tank (R / T) 115, and a radiator 118. The pump 111 circulates heat medium in the first circuit 110.

[0042] The five-way valve 310 has five ports P1-P5. By connecting the port P1 and the port P2 of the five-way valve 310, a second circuit 120 including a flow path 120a and a flow path 120b is formed. The flow path 120a includes a pump 121 and a refrigerator 160. The flow path 120b includes a battery 200 and an electric heater 220. The pump 121 circulates the heat medium in the second circuit 120. The ports P3 and P4 of the five-way valve 310 are connected to the storage tank 320 via the flow paths 130b and 130a, respectively. By connecting the port P3 and the port P4, a third circuit 130 including the flow path 130a and the flow path 130b is formed. The flow path 130a includes an SPU (Smart Power Unit) 131, a PCU (Power Control Unit) 132, 134, a pump 133, and oil coolers (O / C) 135, 136. The pump 133 circulates the heat medium in the third circuit 130. The oil coolers 135 and 136 cool the oil supplied to the transaxle (T / A) of the vehicle 100 by the electric oil pump (EOP). The port P5 of the five-way valve 310 is connected to the reservoir tank 320 via the flow path 170a. The flow path 170a includes the radiator 170.

[0043] SPU131 functions as an on-vehicle charger and discharger (charger and discharger) for the battery 200. However, the vehicle 100 does not necessarily have an external power supply function (such as a V2H function). SPU131 includes, for example, a power conversion circuit. PCU132, 134 are circuits that use the power supplied from the battery 200 to drive the Fr-MG (front motor) and Rr-MG (rear motor) not shown in the figure. Each MG is equivalent to an electric motor that drives the vehicle 100. The torque output by each MG rotates the drive wheels of the vehicle 100 via a variable speed drive axle (T / A). T / A functions as a power transmission mechanism. The battery 200 functions as a power storage device for driving. Each PCU may include a bidirectional inverter.

[0044] The refrigeration cycle 150 includes a compressor 151, an electric expansion valve 152, an evaporator 153, an evaporative pressure regulator (EPR) 154, and an electric expansion valve 155. The condenser 140 is connected to both the first circuit 110 and the refrigeration cycle 150, and functions as a heat exchanger. The refrigerator 160 is connected to both the refrigeration cycle 150 and the flow path 120a, and functions as a heat exchanger. The air conditioning device installed in the vehicle 100 uses the first circuit 110 and the refrigeration cycle 150 to perform air conditioning (heating, cooling) inside the vehicle 100. For example, the heater core 114 heats the air in the vehicle cabin, and the evaporator 153 cools the air in the vehicle cabin.

[0045] The refrigeration cycle 150, refrigerator 160, SPU 132, PCUs, heaters, pumps, and valves in the thermal management system 100a are controlled by an onboard electronic control unit (ECU) not shown. Figure 1 The semiconductor power device 10 shown. The housing of each PCU corresponds to the metal member 41. In the thermal management system 100a, the battery 200 corresponds to the target component, and the flow path 130a includes Figure 1 The heat dissipation path 30 is shown. Figure 1 The heat dissipation structure shown is applied to the vehicle 100, and the output limitation (power limitation) of the vehicle 100 caused by the temperature rise of each PCU under high load is suppressed. In addition, when each PCU is at a low temperature, in the state where the port P3 and the port P4 of the five-way valve 310 are connected, the heat generation of each PCU (heat transfer to the flow path 130a) can be promoted. As a result, the temperature of the battery 200 can be increased by using the heat generated by the power semiconductor 11 in each PCU. As a result, according to the vehicle 100, the overheating of the semiconductor power device 10 in a high temperature environment can be suppressed, and the temperature of the battery 200 can be increased by using the heat generated by the semiconductor power device 10 in a low temperature environment.

[0046] Figure 1 The heat dissipation structure shown can be modified appropriately. The actuator for moving the thermally conductive material (high thermally conductive material M2 / low thermally conductive material M3) is not limited to the actuator using Figure 1 The actuator of the thermal expansion material M1 shown. For example, a bimetal pump or a pump capable of forward and reverse rotation can be used to move the thermal conductive material as the temperature of the heat generating part increases. The heat generating part is not limited to a power semiconductor, but can also be a heat generating component other than a power semiconductor. Figure 1 The heat dissipation structure shown can be applied to mobile objects other than automobiles. Examples of mobile objects other than automobiles include transportation vehicles other than automobiles (ships, airplanes, etc.), mobile machinery (agricultural machinery, construction machinery, etc.), and unmanned mobile objects (unmanned guided vehicles, robots, etc.). Figure 1 The heat dissipation structure shown can be applied to a fixed placement type system.

[0047] The embodiments disclosed this time are illustrative in all aspects and are not restrictive. The scope of the present disclosure is indicated by the claims rather than the description of the embodiments above, and includes all modifications within the scope equivalent to the claims.

Claims

1. A thermal management system, comprising a heat generating unit having a plurality of heat dissipation paths, wherein: The plurality of heat dissipation paths include a first heat dissipation path and a second heat dissipation path, The first heat dissipation path is configured to transfer heat from the heat generating portion to other portions other than the heat generating portion. As the temperature of the heat generating portion increases, the amount of heat dissipated by the heat generating portion through the second heat dissipation path increases.

2. The thermal management system according to claim 1, wherein: The first heat dissipation path includes a flow path for a heat medium to flow, and the heat medium performs heat exchange between the heat generating portion and the other portions. The second heat dissipation path includes a heat dissipation portion and a heat conduction portion that transfers heat from the heat generating portion to the heat dissipation portion. At least a portion of the heat transfer portion is configured such that thermal conductivity increases as the temperature of the heat generating portion increases.

3. The thermal management system according to claim 2, wherein: A container capable of exchanging heat with the heat generating portion is also provided. The container contains a low thermal conductivity material, a high thermal conductivity material having a higher thermal conductivity than the low thermal conductivity material, and a thermal expansion material having a higher thermal expansion coefficient than both the low thermal conductivity material and the high thermal conductivity material. The thermal expansion material contracts and expands according to the temperature of the heat generating portion. The low thermal conductive material moves in the container due to the force generated by the contraction or expansion of the thermal expansion material, and is thus contained in the thermal conductive portion. The high thermal conductive material moves in the container by a force generated by expansion or contraction of the thermally expansive material, and is thereby contained in the thermally conductive portion.

4. The thermal management system according to claim 3, wherein: The container includes a first metal portion, a resin portion, and a second metal portion. The first metal part is configured to transfer the heat generated by the heat generating part to the thermal expansion material. The second metal portion is included in the heat conducting portion, The resin portion is located between the first metal portion and the second metal portion.

5. A vehicle equipped with the thermal management system according to any one of claims 1 to 4, wherein: The vehicle has: Electricity storage device; as well as A circuit having a semiconductor power device and using the power output by the power storage device to drive the electric motor for driving the vehicle, The other parts include the power storage device, The semiconductor power device includes the heat generating portion.

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