Flexible material surface low-stress damp-heat-resistant infrared radiation heat dissipation film

Abstract

The invention relates to the technical field of satellite surface heat management, in particular to a flexible material surface low-stress damp-heat-resistant infrared radiation heat dissipation film. The compactness of aluminum oxide of the barrier layer is used for preventing water vapor from entering, and the problem that a thermal control film is not resistant to damp and heat is solved; the internal stress of the film is reduced by the compactness and looseness of the two radiation heat dissipation layers, and the infrared radiation heat dissipation performance of the film is improved. The method can be used for preparing the low-stress damp-heat-resistant infrared radiation film on the surface of the flexible substrate material. According to the design of the low-stress damp-heat-resistant infrared radiation heat dissipation film on the surface of the flexible material, dense aluminum oxide is used for blocking invasion of water vapor, the internal stress of the film is reduced and the infrared radiation performance is improved through the sparse and dense structure of a silicon dioxide film layer, and preparation of the low-stress damp-heat-resistant infrared radiation film on the surface of the flexible material is achieved. The infrared radiation capability is adjustable; the stress is small; and the heat and humidity resistance is realized.

Description

Technical Field

[0001] The invention relates to the technical field of satellite surface thermal management, and in particular to a low-stress, moisture-heat-resistant, infrared radiation heat dissipation film on the surface of a flexible material. Background Art

[0002] With the development of space technology, satellites are playing an increasingly important role in my country's national economy and military fields. As a precision instrument, satellites carry important payloads inside and thermal control materials outside that are specially used to adjust the thermal radiation properties of satellites to achieve thermal control purposes. At present, satellites often use glass-based optical solar reflectors (OSRs) to regulate the thermal control performance of satellites, also known as secondary surface mirrors (SSMs), which can maintain the temperature of satellite working parts in a relatively stable range. The infrared radiation heat dissipation performance of secondary surface mirrors is regulated by the thickness of the silicon dioxide (SiO2) film on its surface. There are two ways to improve the infrared emissivity of secondary surface mirrors: 1) Prepare a relatively loose silicon dioxide film layer structure. The advantage of this method is that it will not greatly increase the internal stress of the film layer, but its moisture and heat resistance is obviously insufficient. When the satellite is stored at the launch site for a long time, it is easily corroded by water vapor; 2) Prepare a relatively dense silicon dioxide film layer structure. The advantage of this method is that the film layer has excellent moisture and heat resistance, but its internal stress is large and the adhesion is insufficient. Moisture and heat resistance and stress problems cannot always be achieved at the same time. In addition, as a rigid component, the secondary surface mirror is not easy to bend and cannot be mounted on the curved surface of the satellite. Summary of the invention

[0003] The technical problem solved by the present invention is: to overcome the deficiencies of the prior art and to provide a low-stress, moisture-resistant, and infrared radiation heat dissipation film on the surface of a flexible material.

[0004] The technical solution of the present invention is:

[0005] A low-stress, moisture-heat-resistant, infrared radiation heat dissipation film on the surface of a flexible material. By designing a periodic film layer structure and changing the density of the film layer, a low-stress, moisture-heat-resistant, infrared radiation heat dissipation film can be prepared on the surface of a flexible material. A low-stress, moisture-heat-resistant, infrared radiation heat dissipation film on the surface of a flexible material is designed using a periodic laminated structure. The film is particularly suitable for being applied to curved surfaces of satellites and other spacecraft, providing technical support for my country's satellite thermal control system.

[0006] The design of low-stress, moisture-resistant, infrared radiation heat dissipation film mainly involves two parts: the thickness and organizational structure of each functional film.

[0007] The film comprises, from bottom to top, a flexible polyimide substrate, a barrier layer, a combination of n radiation heat dissipation layers, a first radiation heat dissipation layer and a barrier layer;

[0008] The radiation heat dissipation layer combination includes a first radiation heat dissipation layer and a second radiation heat dissipation layer;

[0009] A barrier layer is arranged on the surface of the flexible polyimide substrate, and the flexible substrate material is polyimide;

[0010] A combination of n radiation heat dissipation layers is arranged on the surface of the barrier layer, and the materials of the first radiation heat dissipation layer and the second radiation heat dissipation layer are both silicon oxide;

[0011] A first radiation heat dissipation layer is arranged on the surface of the n radiation heat dissipation layer combination;

[0012] A barrier layer is arranged on the surface of the first radiation heat dissipation layer, and the barrier layer material is aluminum oxide;

[0013] The barrier layer is 100nm of aluminum oxide;

[0014] The first radiation heat dissipation layer is 100-200nm of silicon oxide;

[0015] The second radiation heat dissipation layer is 400-500nm of silicon oxide.

[0016] A method for preparing a low-stress, moisture-resistant, infrared radiation heat dissipation film on the surface of a flexible material, the method comprising the following steps:

[0017] Step 1, cleaning and drying the flexible polyimide substrate;

[0018] Step 2, based on step 1, bombarding the surface of the flexible polyimide substrate with an ion source to remove inert functional groups on the surface of the flexible polyimide substrate and improve the adhesion of the film layer;

[0019] Step 3, based on step 2, a reactive magnetron sputtering thin film deposition technology is used, Ar gas is used as a sputtering gas, O2 gas is used as a reaction gas, and a dense barrier layer with a thickness of 100 nm is prepared on the surface of the flexible polyimide substrate at a deposition pressure of no more than 0.2 Pa;

[0020] Step 4, based on step 3, a reactive magnetron sputtering thin film deposition technology is used, Ar gas is used as sputtering gas, O2 gas is used as reaction gas, and a dense first radiation heat dissipation layer with a thickness of 100 to 200 nm is prepared on the surface of the barrier layer at a deposition pressure of 0.2 to 0.3 Pa;

[0021] Step 5, based on step 4, a reactive magnetron sputtering thin film deposition technology is used, Ar gas is used as sputtering gas, O2 gas is used as reaction gas, and a relatively loose second radiation heat dissipation layer is prepared on the surface of the first radiation heat dissipation layer at a deposition pressure of 0.5-0.6 Pa, with a thickness of 500nm-600nm;

[0022] Step 6, repeating steps 4 and 5, alternately depositing the first radiation heat dissipation layer and the second radiation heat dissipation layer under low pressure (0.2-0.3 Pa) and high pressure (0.5-0.6 Pa), and adjusting the overall thickness of the film according to the actual infrared radiation performance requirements;

[0023] Step 7, preparing a dense first radiation heat dissipation layer on the surface of the second radiation heat dissipation layer at a deposition pressure of 0.2-0.3 Pa with a thickness of 100-200 nm;

[0024] Step 8. Finally, a reactive magnetron sputtering thin film deposition technique is used, with Ar gas as the sputtering gas and O2 gas as the reaction gas, to prepare a dense barrier layer with a thickness of 100 nm on the surface of the first radiation heat dissipation layer at a deposition pressure not greater than 0.2 Pa.

[0025] The beneficial effects of the present invention are:

[0026] The present invention can prepare a low-stress, moisture-heat-resistant, thermal control film on the surface of a flexible material, and utilize the density of the barrier layer 1, aluminum oxide, to block the intrusion of water vapor, thereby solving the problem that the thermal control film is not resistant to moisture and heat; utilize the density and looseness of the first radiation heat dissipation layer and the second radiation heat dissipation layer to reduce the internal stress of the film, thereby improving the infrared radiation heat dissipation performance of the film. That is, the present invention can prepare a low-stress, moisture-heat-resistant, infrared radiation film on the surface of a flexible substrate material. A design of a low-stress, moisture-heat-resistant, infrared radiation heat dissipation film on the surface of a flexible material, utilizes dense aluminum oxide to block the intrusion of water vapor, utilizes the sparse and dense structure of a silicon dioxide film layer to reduce the internal stress of the film and improve the infrared radiation performance, thereby realizing the preparation of a low-stress, moisture-heat-resistant, infrared radiation film on the surface of a flexible material, which has the characteristics of adjustable infrared radiation capacity, low stress, and moisture and heat resistance. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 It is a schematic diagram of the structure of a low-stress, moisture-heat-resistant, thermal control film.

[0028] Figure 2 The test results of hemispherical emissivity of the prepared low-stress, moisture-resistant and infrared radiation film.

[0029] Figure 3 The test results of the moisture and heat resistance of the prepared low-stress moisture and heat resistant infrared radiation film. DETAILED DESCRIPTION

[0030] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0031] Example

[0032] like Figure 1As shown, a low-stress, moisture-heat-resistant, infrared radiation heat dissipation film on the surface of a flexible material is prepared by designing a periodic film layer structure and changing the density of the film layer. A low-stress, moisture-heat-resistant, infrared radiation heat dissipation film on the surface of a flexible material is designed using a periodic laminated structure. The film is particularly suitable for being applied to curved surfaces of satellites and other spacecraft, providing technical support for my country's satellite thermal control system.

[0033] The design of low-stress, moisture-resistant, infrared radiation heat dissipation film mainly involves two parts: the thickness and organizational structure of each functional film.

[0034] The film comprises, from bottom to top, a flexible polyimide substrate, a barrier layer 1, a combination of two radiation heat dissipation layers, a radiation heat dissipation layer 1 and a barrier layer 1;

[0035] The radiation heat dissipation layer combination includes a radiation heat dissipation layer 1 and a radiation heat dissipation layer 2;

[0036] A barrier layer 1 is arranged on the surface of the flexible polyimide substrate, and the flexible polyimide substrate material is aluminum oxide;

[0037] A combination of n radiation heat dissipation layers is arranged on the surface of the barrier layer 1, and the materials of the radiation heat dissipation layer 1 and the radiation heat dissipation layer 2 are both silicon oxide;

[0038] The radiation heat dissipation layer 1 is arranged on the surface of the n radiation heat dissipation layer combination;

[0039] A barrier layer 1 is arranged on the surface of the radiation heat dissipation layer 1, and the material of the barrier layer 1 is aluminum oxide;

[0040] Barrier layer 1 is 100 nm aluminum oxide;

[0041] The radiation heat dissipation layer 1 is 200nm of silicon oxide;

[0042] The radiation heat dissipation layer 2 is 500 nm thick silicon oxide.

[0043] A method for preparing a low-stress, moisture-resistant, infrared radiation heat dissipation film on the surface of a flexible material, the method comprising the following steps:

[0044] Step 1, cleaning and drying the flexible polyimide substrate;

[0045] Step 2, based on step 1, bombarding the surface of the flexible polyimide substrate with an ion source to remove inert functional groups on the surface of the flexible polyimide substrate and improve the adhesion of the film layer;

[0046] Step 3, based on step 2, a reactive magnetron sputtering thin film deposition technology is used, Ar gas is used as a sputtering gas, O2 gas is used as a reaction gas, and a dense barrier layer with a thickness of 100 nm is prepared on the surface of the flexible polyimide substrate at a deposition pressure of no more than 0.2 Pa;

[0047] Step 4, based on step 3, a reactive magnetron sputtering thin film deposition technology is used, Ar gas is used as sputtering gas, O2 gas is used as reaction gas, and a dense radiation heat dissipation layer 1 with a thickness of 100 to 200 nm is prepared on the surface of the barrier layer at a deposition pressure of 0.2 to 0.3 Pa;

[0048] Step 5, based on step 4, a reactive magnetron sputtering thin film deposition technology is used, Ar gas is used as sputtering gas, O2 gas is used as reaction gas, and a relatively loose radiation heat dissipation layer 2 with a thickness of 500nm-600nm is prepared on the surface of the radiation heat dissipation layer 1 at a deposition pressure of 0.5-0.6Pa;

[0049] Step 6, repeating steps 4 and 5, alternately depositing radiation heat dissipation layer 1 and radiation heat dissipation layer 2 under low pressure (0.2-0.3 Pa) and high pressure (0.5-0.6 Pa), and adjusting the overall thickness of the film according to the actual infrared radiation performance requirements;

[0050] Step 7, preparing a dense radiation heat dissipation layer 1 with a thickness of 100 to 200 nm on the surface of the radiation heat dissipation layer 2 at a deposition pressure of 0.2 to 0.3 Pa;

[0051] Step 8. Finally, reactive magnetron sputtering thin film deposition technology is used, with Ar gas as the sputtering gas and O2 gas as the reaction gas, to prepare a dense barrier layer with a thickness of 100 nm on the surface of the radiation heat dissipation layer 1 at a deposition pressure not greater than 0.2 Pa, thereby obtaining a low-stress, moisture-resistant, and infrared radiation heat dissipation film on the surface of the flexible material.

[0052] In the process of executing the above steps 1-8, by changing the number of repetitions of 4-5, a film with infrared radiation heat dissipation can be prepared. The hemispherical emissivity and moisture and heat resistance performance of the low stress and moisture-heat resistant infrared radiation heat dissipation film on the surface of the flexible material were tested. The hemispherical emissivity was 0.538, and the results were as follows: Figure 2 The film can meet the 48h, 50℃, 95% humidity heat resistance test, the results are as follows Figure 3 According to the results, the prepared moisture-heat-resistant infrared radiation heat dissipation film can not only block the intrusion of water vapor, but also the sparse and dense structure of the silicon dioxide film layer reduces the internal stress of the film and improves the infrared radiation performance, realizing the preparation of low-stress moisture-heat-resistant infrared radiation film on the surface of flexible materials.

[0053] In summary, the above are only preferred embodiments of the present invention and are not intended to limit the protection scope of the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A low stress, moisture and heat resistant infrared radiation heat dissipation film on the surface of a flexible material, characterized by: The film comprises, from bottom to top, a flexible polyimide substrate, a barrier layer, a combination of n radiation heat dissipation layers, a first radiation heat dissipation layer and a barrier layer; The radiation heat dissipation layer combination includes a first radiation heat dissipation layer and a second radiation heat dissipation layer; A barrier layer is provided on the surface of the flexible polyimide substrate; n radiation heat dissipation layer combinations are arranged on the surface of the barrier layer; A first radiation heat dissipation layer is arranged on the surface of the n radiation heat dissipation layer combination; A barrier layer is arranged on the surface of the first radiation heat dissipation layer.

2. The low stress, moisture and heat resistant infrared radiation heat dissipation film on the surface of a flexible material according to claim 1, characterized in that: The base material is flexible polyimide.

3. The low stress, moisture and heat resistant infrared radiation heat dissipation film on the surface of a flexible material according to claim 1, characterized in that: The materials of the first radiation heat dissipation layer and the second radiation heat dissipation layer are both silicon oxide.

4. The low stress, moisture and heat resistant infrared radiation heat dissipation film on the surface of a flexible material according to claim 1, characterized in that: The barrier layer material is aluminum oxide.

5. The low stress, moisture and heat resistant infrared radiation heat dissipation film on the surface of a flexible material according to claim 1, characterized in that: The barrier layer is 100 nm of aluminum oxide.

6. The low stress, moisture and heat resistant infrared radiation heat dissipation film on the surface of a flexible material according to claim 1, characterized in that: The first radiation heat dissipation layer is 100-200nm thick silicon oxide.

7. The low stress, moisture and heat resistant infrared radiation heat dissipation film on the surface of a flexible material according to claim 1, characterized in that: The second radiation heat dissipation layer is 400-500nm of silicon oxide.

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