Flexible material surface low-stress damp-heat-resistant infrared radiation heat dissipation film and preparation method thereof

Abstract

The invention relates to a flexible material surface low-stress damp-heat-resistant infrared radiation heat dissipation film and a preparation method thereof. The method is especially suitable for heat management of satellite surface curved surface positions. The infrared radiation heat dissipation performance of the thin film is rapidly improved by utilizing loose-structure silicon dioxide deposited under high air pressure, and large internal stress is avoided. In addition, thin and compact aluminum oxide and silicon oxide deposited under low air pressure are used for blocking a loose structure of oxide deposited under high air pressure, and the problem that the loose structure is not resistant to damp and heat is solved. According to the preparation method of the low-stress damp-heat-resistant infrared radiation heat dissipation film on the surface of the flexible material, under the same preparation method, the density degree of the organization structure of the film is changed by utilizing the change of deposition air pressure, the internal stress of the film is reduced, and the infrared radiation performance is improved; the preparation of the low-stress damp-heat-resistant infrared radiation film on the surface of the flexible material is realized, and the low-stress damp-heat-resistant infrared radiation film has the characteristics of adjustable infrared emissivity, small stress and damp-heat resistance.

Description

Technical Field

[0001] The present invention relates to a low-stress, moisture-heat-resistant, infrared radiation heat dissipation film on the surface of a flexible material and a preparation method thereof, which is particularly suitable for thermal management of curved surfaces on satellite surfaces. Background Art

[0002] With the development of space technology, satellites are playing an increasingly important role in my country's national economy and military fields. As a precision instrument, satellites carry important payloads inside and thermal control materials outside that are specially used to adjust the thermal radiation properties of satellites to achieve thermal control purposes. At present, satellites often use glass-based optical solar reflectors (OSRs) to regulate the thermal control performance of satellites, also known as secondary surface mirrors (SSMs), which can maintain the temperature of satellite working parts in a relatively stable range. The infrared radiation heat dissipation performance of secondary surface mirrors is regulated by the thickness of the silicon dioxide (SiO2) film on its surface. There are two ways to improve the infrared emissivity of secondary surface mirrors: 1) Prepare a relatively loose silicon dioxide film layer structure. The advantage of this method is that it will not greatly increase the internal stress of the film layer, but its moisture and heat resistance is obviously insufficient. When the satellite is stored at the launch site for a long time, it is easily corroded by water vapor; 2) Prepare a relatively dense silicon dioxide film layer structure. The advantage of this method is that the film layer has excellent moisture and heat resistance, but its internal stress is large and the adhesion is insufficient. Moisture and heat resistance and stress problems cannot always be achieved at the same time. In addition, as a rigid component, the secondary surface mirror is not easy to bend and cannot be mounted on the curved surface of the satellite. Summary of the invention

[0003] To achieve the above purpose, the technical solution of the present invention is: a low-stress, moisture-resistant, infrared radiation heat dissipation film on the surface of a flexible material and a preparation method thereof, and a low-stress, moisture-resistant, infrared radiation film is prepared for a flexible material substrate. Therefore, in response to the above problems and needs, the present invention utilizes the change of the deposition pressure during the coating process to control the organizational structure of the film layer, and realizes the preparation of a low-stress, moisture-resistant, infrared radiation film on the surface of a flexible material, which is particularly suitable for application on the curved surface of satellites and other spacecraft, and provides technical support for my country's satellite thermal control system.

[0004] A low-stress, moisture-resistant, infrared radiation heat dissipation film on a flexible material surface, the film comprising, from bottom to top, a flexible polyimide substrate, a barrier layer, a combination of n radiation heat dissipation layers, a radiation heat dissipation layer 1, and a barrier layer 1;

[0005] The radiation heat dissipation layer combination includes a radiation heat dissipation layer 1 and a radiation heat dissipation layer 2;

[0006] A barrier layer is arranged on the surface of the flexible polyimide substrate, and the flexible polyimide substrate material is aluminum oxide;

[0007] A combination of n radiation heat dissipation layers is arranged on the surface of the barrier layer, and the materials of the radiation heat dissipation layer 1 and the radiation heat dissipation layer 2 are both silicon oxide;

[0008] The radiation heat dissipation layer 1 is arranged on the surface of the n radiation heat dissipation layer combination;

[0009] A barrier layer 1 is arranged on the surface of the radiation heat dissipation layer 1, and the material of the barrier layer 1 is aluminum oxide;

[0010] The barrier layer is 100nm of aluminum oxide;

[0011] The radiation heat dissipation layer 1 is 100 to 200 nm of silicon oxide;

[0012] The radiation heat dissipation layer 2 is 400 to 500 nm of silicon oxide.

[0013] A method for preparing a low-stress, moisture-resistant, infrared radiation heat dissipation film on the surface of a flexible material, comprising the following steps:

[0014] Step 1, cleaning and drying the flexible polyimide substrate;

[0015] Step 2, based on step 1, bombarding the surface of the flexible polyimide substrate with an ion source to remove inert functional groups on the surface of the flexible polyimide substrate and improve the adhesion of the film layer;

[0016] Step 3, based on step 2, a reactive magnetron sputtering thin film deposition technology is used, Ar gas is used as a sputtering gas, O2 gas is used as a reaction gas, and a dense barrier layer with a thickness of 100 nm is prepared on the surface of the flexible polyimide substrate at a deposition pressure of no more than 0.2 Pa;

[0017] Step 4, based on step 3, a reactive magnetron sputtering thin film deposition technology is used, Ar gas is used as sputtering gas, O2 gas is used as reaction gas, and a dense radiation heat dissipation layer 1 with a thickness of 100 to 200 nm is prepared on the surface of the barrier layer at a deposition pressure of 0.2 to 0.3 Pa;

[0018] Step 5, based on step 4, a reactive magnetron sputtering thin film deposition technology is used, Ar gas is used as sputtering gas, O2 gas is used as reaction gas, and a relatively loose radiation heat dissipation layer 2 with a thickness of 500nm-600nm is prepared on the surface of the radiation heat dissipation layer 1 at a deposition pressure of 0.5-0.6Pa;

[0019] Step 6, repeating steps 4 and 5, alternately depositing radiation heat dissipation layer 1 and radiation heat dissipation layer 2 under low pressure (0.2-0.3 Pa) and high pressure (0.5-0.6 Pa), and adjusting the overall thickness of the film according to the actual infrared radiation performance requirements;

[0020] Step 7, preparing a dense radiation heat dissipation layer 1 with a thickness of 100 to 200 nm on the surface of the radiation heat dissipation layer 2 at a deposition pressure of 0.2 to 0.3 Pa;

[0021] Step 8. Finally, a reactive magnetron sputtering thin film deposition technique is used, with Ar gas as the sputtering gas and O2 gas as the reaction gas, to prepare a dense barrier layer with a thickness of 100 nm on the surface of the radiation heat dissipation layer 1 at a deposition pressure not greater than 0.2 Pa.

[0022] The beneficial effects of the present invention are:

[0023] The present invention can prepare a low-stress, moisture-resistant and heat-resistant infrared radiation film on the surface of a flexible material, and utilizes the loose structure silicon dioxide deposited under high pressure to rapidly improve the infrared radiation heat dissipation performance of the film, thereby avoiding the generation of large internal stress. In addition, the thinner and denser aluminum oxide and silicon oxide deposited under low pressure seal the loose structure of the oxide deposited under high pressure, thereby solving the problem that the loose structure is not resistant to moisture and heat. A method for preparing a low-stress, moisture-resistant and heat-resistant infrared radiation heat dissipation film on the surface of a flexible material, characterized in that: under the same preparation method, the density of the organizational structure of the film is changed by changing the deposition pressure, thereby reducing the internal stress of the film and improving the infrared radiation performance, thereby realizing the preparation of a low-stress, moisture-resistant and heat-resistant infrared radiation film on the surface of a flexible material, which has the characteristics of adjustable infrared emissivity, low stress and moisture and heat resistance. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 This is a schematic diagram of a low stress, heat and humidity resistant infrared radiation film;

[0025] Figure 2 This is a scanning electron microscope image of the prepared low stress, heat and humidity resistant infrared radiation film;

[0026] Figure 3 The test results of hemispherical emissivity of the prepared low-stress, moisture-resistant and infrared radiation film.

[0027] Figure 4 The test results of the moisture and heat resistance of the prepared low-stress moisture and heat resistant infrared radiation film. DETAILED DESCRIPTION

[0028] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0029] Example

[0030] like Figure 1 As shown, a low-stress, moisture-resistant, infrared radiation heat dissipation film on a flexible material surface, the film comprises, from bottom to top, a flexible polyimide substrate, a barrier layer 1, a combination of n radiation heat dissipation layers, a radiation heat dissipation layer 1 and a barrier layer 1;

[0031] The radiation heat dissipation layer combination includes a radiation heat dissipation layer 1 and a radiation heat dissipation layer 2;

[0032] A barrier layer 1 is arranged on the surface of the flexible polyimide substrate, and the flexible polyimide substrate material is aluminum oxide;

[0033] A combination of n radiation heat dissipation layers is arranged on the surface of the barrier layer 1, and the materials of the radiation heat dissipation layer 1 and the radiation heat dissipation layer 2 are both silicon oxide;

[0034] The radiation heat dissipation layer 1 is arranged on the surface of the n radiation heat dissipation layer combination;

[0035] A barrier layer 1 is arranged on the surface of the radiation heat dissipation layer 1, and the material of the barrier layer 1 is aluminum oxide;

[0036] Barrier layer 1 is 100 nm aluminum oxide;

[0037] The radiation heat dissipation layer 1 is 200nm of silicon oxide;

[0038] The radiation heat dissipation layer 2 is 500 nm thick silicon oxide.

[0039] A method for preparing a low-stress, moisture-resistant, infrared radiation heat dissipation film on the surface of a flexible material, comprising the following steps:

[0040] Step 1, cleaning and drying the flexible polyimide substrate;

[0041] Step 2, based on step 1, bombarding the surface of the flexible polyimide substrate with an ion source to remove inert functional groups on the surface of the flexible polyimide substrate and improve the adhesion of the film layer;

[0042] Step 3, based on step 2, a reactive magnetron sputtering thin film deposition technology is used, Ar gas is used as a sputtering gas, O2 gas is used as a reaction gas, and a dense barrier layer with a thickness of 100 nm is prepared on the surface of the flexible polyimide substrate at a deposition pressure of no more than 0.2 Pa;

[0043] Step 4, based on step 3, a reactive magnetron sputtering thin film deposition technology is used, Ar gas is used as the sputtering gas, O2 gas is used as the reaction gas, and a dense radiation heat dissipation layer 1 with a thickness of 200 nm is prepared on the surface of the barrier layer at a deposition pressure of 0.2-0.3 Pa;

[0044] Step 5, based on step 4, a reactive magnetron sputtering thin film deposition technology is used, Ar gas is used as sputtering gas, O2 gas is used as reaction gas, and a relatively loose radiation heat dissipation layer 2 with a thickness of 500nm is prepared on the surface of the radiation heat dissipation layer 1 at a deposition pressure of 0.5-0.6Pa;

[0045] Step 6, repeating steps 4 and 5, alternately depositing radiation heat dissipation layer 1 and radiation heat dissipation layer 2 under low pressure (0.2-0.3 Pa) and high pressure (0.5-0.6 Pa), and adjusting the overall thickness of the film according to the actual infrared radiation performance requirements;

[0046] Step 7, preparing a dense radiation heat dissipation layer 1 with a thickness of 100 to 200 nm on the surface of the radiation heat dissipation layer 2 at a deposition pressure of 0.2 to 0.3 Pa;

[0047] Step 8. Finally, a reactive magnetron sputtering thin film deposition technique is used, with Ar gas as the sputtering gas and O2 gas as the reaction gas, to prepare a dense barrier layer with a thickness of 100 nm on the surface of the radiation heat dissipation layer 1 at a deposition pressure not greater than 0.2 Pa.

[0048] According to the above technical steps, the present invention prepares a low-stress, moisture-resistant, heat-resistant infrared radiation film on the surface of a 50 μm thick flexible polyimide substrate. The microstructure of the low-stress, moisture-resistant, heat-resistant infrared radiation film is as follows: Figure 1 As shown in the scanning electron microscope Figure 2 The hemispherical emissivity is 0.598, and the result is Figure 3 The film can meet the 48h, 50℃, 95% humidity heat resistance test, and there is no shedding or blistering on the surface of the sample. The results are as follows Figure 4 According to the results, the prepared moisture-heat-resistant infrared radiation heat dissipation film can not only block the intrusion of water vapor, but also realize the adjustable infrared radiation performance, thus realizing the preparation of low-stress moisture-heat-resistant infrared radiation film on the surface of flexible materials.

[0049] In summary, the above are only preferred embodiments of the present invention and are not intended to limit the protection scope of the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for preparing a low-stress, moisture-resistant, infrared radiation heat dissipation film on a flexible material surface, characterized in that the steps include: Step 1, cleaning and drying the flexible polyimide substrate; Step 2, bombarding the surface of the flexible polyimide substrate with an ion source to remove inert functional groups on the surface of the flexible polyimide substrate; Step 3, using reactive magnetron sputtering thin film deposition technology, Ar gas is used as sputtering gas, O2 gas is used as reaction gas, and a dense barrier layer is prepared on the surface of the flexible polyimide substrate at a deposition pressure of no more than 0.2 Pa; Step 4, using reactive magnetron sputtering thin film deposition technology, Ar gas is used as sputtering gas, O2 gas is used as reaction gas, and a dense first radiation heat dissipation layer is prepared on the surface of the barrier layer at a deposition pressure of 0.2-0.3 Pa; Step 5, using reactive magnetron sputtering thin film deposition technology, with Ar gas as sputtering gas and O2 gas as reaction gas, to prepare a relatively loose second radiation heat dissipation layer on the surface of the first radiation heat dissipation layer at a deposition pressure of 0.5-0.6 Pa; Step 6, repeating steps 4 and 5, alternately depositing the first radiation heat dissipation layer and the second radiation heat dissipation layer; Step 7, preparing a dense first radiation heat dissipation layer on the surface of the second radiation heat dissipation layer at a deposition pressure of 0.2-0.3 Pa; Step 8. Finally, reactive magnetron sputtering thin film deposition technology is used, with Ar gas as the sputtering gas and O2 gas as the reaction gas, to prepare a dense barrier layer on the surface of the first radiation heat dissipation layer at a deposition pressure not greater than 0.2 Pa, thereby obtaining a low-stress, moisture-resistant, and infrared radiation heat dissipation film on the surface of the flexible material.

2. The method for preparing a low-stress, moisture-heat-resistant, infrared radiation heat dissipation film on a flexible material surface according to claim 1, characterized in that: In step 3, the thickness of the barrier layer is 100 nm.

3. The method for preparing a low-stress, moisture-heat-resistant, infrared radiation heat dissipation film on a flexible material surface according to claim 1, characterized in that: In the step 4, the thickness of the first radiation heat dissipation layer is 100-200 nm.

4. The method for preparing a low-stress, moisture-heat-resistant, infrared radiation heat dissipation film on a flexible material surface according to claim 1, characterized in that: In step 5, the thickness of the second radiation heat dissipation layer is 500nm-600nm.

5. The method for preparing a low-stress, moisture-heat-resistant, infrared radiation heat dissipation film on a flexible material surface according to claim 1, characterized in that: In step 6, the overall thickness of the film is adjusted according to actual infrared radiation performance requirements.

6. The method for preparing a low-stress, moisture-heat-resistant, infrared radiation heat dissipation film on a flexible material surface according to claim 1, characterized in that: In step 7, the thickness of the first radiation heat dissipation layer is 100-200 nm.

7. The method for preparing a low-stress, moisture-heat-resistant, infrared radiation heat dissipation film on a flexible material surface according to claim 1, characterized in that: In the step, the thickness of the barrier layer is 100 nm.

8. The method for preparing a low-stress, moisture-heat-resistant, infrared radiation heat dissipation film on a flexible material surface according to claim 1, characterized in that: The flexible substrate material is polyimide; The materials of the first radiation heat dissipation layer and the second radiation heat dissipation layer are both silicon oxide; The barrier layer material is aluminum oxide; The barrier layer is 100 nm of aluminum oxide.

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