Magnetic rod assembly, magnetron sputtering rotating cathode and magnetron sputtering coating equipment

Abstract

The present invention discloses a magnetic bar assembly, a magnetron sputtering rotating cathode and a magnetron sputtering coating device. The magnet array of the magnetic bar includes a straight line area located in the middle and a turning area located at both ends of the straight line area. The turning area includes at least one offset segment, which includes a first offset magnetic area located in the outer part of the pattern and a second offset magnetic area located in the inner part of the pattern. The first offset magnetic area and the second offset magnetic area are offset along the width direction of the straight line area to form a magnetic step. The two offset magnetic areas in the offset segment of the turning area are offset along the width direction to form a magnetic step. Under the premise of not affecting the overall width of the magnetic bar, the number of deep etching points in the turning area is increased, and the etching speed of a single point position is reduced, thereby improving the utilization rate of the target material, avoiding the local etching of the end of the target material to be faster, and extending the service life of the target material.

Description

Technical Field

[0001] The invention relates to the technical field of magnetron sputtering, and in particular to a magnetic bar assembly, a magnetron sputtering rotating cathode and a magnetron sputtering coating device. Background Art

[0002] The magnetron sputtering cathode is the core component of the vacuum magnetron sputtering coating equipment. Both the planar cathode and the rotating cathode are widely used in the industry. The utilization rate of the target material is an important parameter for judging the cathode in the industry, which is related to the production cost of the customer and the utilization rate of the equipment.

[0003] The target utilization rate of the planar cathode on the market is generally around 20-40%, while the working characteristic of the rotating cathode is that the target is in a rotating state during the working process, so the target utilization rate is high, the target surface is clean and the number of arcs is small. The target utilization rate of the rotating cathode on the market is generally around 65-75%.

[0004] With the development of the industry, rotating cathodes are used in more and more industries. Some industries use precious metal targets or expensive ceramic targets. The purchase price of targets is very expensive. The improvement of target utilization is directly related to the production cost and market competitiveness of the product. At the same time, the improvement of target utilization is also conducive to improving the utilization rate of equipment and increasing the production capacity of coating equipment.

[0005] The existing rotating cathode magnet assembly technology generally adopts the traditional independent three-row magnetic field structure design to form a sputtering track pattern, such as Figure 1-3 As shown. As the target material set outside the magnetic rod rotates, the straight line part in the middle of the sputtering pattern evenly etches the middle part of the target material. However, the magnetic field density is higher at the two corners, which makes the corresponding position of the target material etch faster, resulting in slower etching of the middle part of the target material, and the end of the target material is etched first, so the utilization rate of the target material is low, as shown in the figure. Figure 4 and 5 To solve this problem, the patent (CN103354844B) adopts a magnetic field structure design with at least four straight parallel independent linear arrays, such as Figure 6 Increasing the magnetic field width can improve the utilization rate of the target to a certain extent. However, as the magnet array increases, the space occupied by the magnet increases, which is difficult to set up and implement in small-diameter target projects. It will also increase the cathode sputtering angle, thereby reducing the collection rate of the etched target. Summary of the invention

[0006] In order to solve the technical problems existing in the background technology, the present invention provides a magnetic rod assembly, a magnetron sputtering rotating cathode and a magnetron sputtering coating device.

[0007] A magnetic bar assembly proposed by the present invention comprises: a magnetic yoke and a magnet array arranged on the magnetic yoke, wherein the magnet array forms a pattern on the magnetic yoke including an inner part and an outer part surrounding the inner part; the inner part has a second magnetic property and the outer part has a first magnetic property;

[0008] The plurality of magnets include a straight region located in the middle and a turning region located at both ends of the straight region, the straight region includes two or three columns of magnets, the two or three columns of magnets form two first straight magnetic portions located in the outer portion and a second straight magnetic portion located in the inner portion; the turning region includes a magnet array, the magnet array forms a first turning magnetic portion located in the outer portion and a second turning magnetic portion located in the inner portion;

[0009] The turning area includes at least one offset segment, the offset segment includes a first offset magnetic region located in the outer part and a second offset magnetic region located in the inner part, the first offset magnetic region has a first magnetism and the second offset magnetic region has a second magnetism, the first offset magnetic region and the second offset magnetic region are offset along the width direction of the straight area to form a magnetic step.

[0010] Preferably, the first offset magnetic region and the first linear magnetic portion are arranged offset in the width direction, and the second offset magnetic region and the second linear magnetic portion are arranged offset in the width direction.

[0011] Preferably, the turning area includes a plurality of offset segments arranged side by side along the extension direction of the straight area, the first offset magnetic region and the second offset magnetic region of two adjacent offset segments are offset along the width direction to form a magnetic step, and the width of the plurality of first offset magnetic regions gradually increases in the direction away from the straight area.

[0012] Preferably, the turning area comprises a first offset segment and a second offset segment arranged along the width direction of the straight area, and the magnetic steps of the first offset segment and the second offset segment are staggered.

[0013] Preferably, the first offset magnetic region comprises a first magnetic block and a second magnetic block, the first magnetic block is located in the outer portion, and the second magnetic block is located in the inner portion;

[0014] Preferably, the first offset magnetic region includes at least one first magnetic block and at least one second magnetic block, and the at least one first magnetic block and the at least one second magnetic block are arranged in sequence along the width direction of the straight area.

[0015] Preferably, the offset section comprises a transverse magnet having a first magnetic property located at the outer portion and a second magnetic property located at the inner portion.

[0016] Preferably, the offset section further comprises a longitudinal magnet;

[0017] The transverse magnet is located outside the longitudinal magnet, and the longitudinal magnet has a second magnetic property located in the inner portion;

[0018] Alternatively, the longitudinal magnet is located outside the transverse magnet, and the longitudinal magnet has a first magnetic property located in the outer portion.

[0019] Preferably, the offset section comprises a plurality of longitudinal magnets sequentially arranged along the width direction, and the number of the longitudinal magnets of the plurality of offset sections gradually decreases or increases in a direction away from the straight region.

[0020] Preferably, the two deflection areas are arranged symmetrically with respect to the straight area.

[0021] In the present invention, the proposed magnetic bar assembly, the magnetic bar's magnet array includes a straight area located in the middle and a turning area located at both ends of the straight area, the turning area includes at least one offset section, which includes a first offset magnetic area located in the outer part of the pattern and a second offset magnetic area located in the inner part of the pattern, the first offset magnetic area and the second offset magnetic area are offset along the width direction of the straight area to form a magnetic step. The two offset magnetic areas in the offset section of the turning area are offset along the width direction to form a magnetic step, and the number of deep etching points in the turning area is increased without affecting the overall width of the magnetic bar, and the etching speed of a single point position is reduced, thereby improving the utilization rate of the target material, avoiding local etching at the end of the target material faster, and extending the service life of the target material.

[0022] The present invention also provides a magnetron sputtering rotating cathode, comprising the above-mentioned magnetic bar assembly.

[0023] The present invention also provides a magnetron sputtering coating device, comprising the above-mentioned magnetron sputtering rotating cathode.

[0024] In the present invention, the proposed magnetron sputtering rotating cathode and magnetron sputtering coating equipment have technical effects similar to those of the above-mentioned magnetic rod assembly, so they are not described in detail. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 Schematic diagram of a rotating cathode with three rows of magnets in the prior art.

[0026] Figure 2 It is a schematic diagram of the magnetic field of a magnetic bar with three rows of magnets in the prior art.

[0027] Figure 3 for Figure 2 Schematic diagram of the sputtering racetrack pattern of the middle magnetic bar.

[0028] Figure 4 Schematic diagram of the cross section of the new target before sputtering.

[0029] Figure 5 To adopt Figure 2 Schematic diagram of the target material cross-section after magnetic rod etching.

[0030] Figure 6 Schematic diagram of a rotating cathode with four rows of magnets in the prior art.

[0031] Figure 7 A schematic diagram of the magnetic field of an embodiment of a magnetron sputtering device proposed in the present invention.

[0032] Figure 8 A schematic diagram of the magnetic field of an embodiment of a magnetic bar assembly proposed by the present invention.

[0033] Fig. 9 A schematic diagram of the magnetic field in the turning area of ​​a magnetic bar assembly in one embodiment of the present invention.

[0034] Fig.10 This is a schematic diagram of the arrangement of magnetic poles in a turning area of ​​a magnetic bar assembly in one embodiment of the present invention.

[0035] Fig.11 This is a schematic diagram of the arrangement of magnetic blocks in an offset section of a magnetic bar assembly in one embodiment of the present invention.

[0036] Fig.12 This is a schematic diagram of the arrangement of magnetic blocks in an offset section of a magnetic bar assembly in one embodiment of the present invention.

[0037] Fig.13 This is a schematic diagram of the arrangement of magnetic poles in a turning area of ​​a magnetic bar assembly in one embodiment of the present invention.

[0038] Fig.14 A schematic cross-sectional view of an offset section in a turning area of ​​a magnetic bar assembly according to an embodiment of the present invention.

[0039] Fig.15 This is a schematic cross-sectional view of a straight line region in one embodiment of a magnetic bar assembly provided by the present invention.

[0040] Fig.16 This is a schematic diagram of a turning area in one embodiment of a magnetic bar assembly provided by the present invention.

[0041] Fig.17 This is a schematic diagram of a turning area in one embodiment of a magnetic bar assembly provided by the present invention.

[0042] Fig.18 A schematic diagram of the magnetic pole arrangement of an embodiment of a magnetic bar assembly proposed in the present invention.

[0043] Fig.19 A schematic diagram of the magnetic pole arrangement of an embodiment of a magnetic bar assembly proposed in the present invention.

[0044] Reference numerals:

[0045] 1 yoke; 100 targets;

[0046] 200: terminal assembly; 201: first linear magnetic portion; 202: second linear magnetic portion;

[0047] 300 substrate to be coated; 301 first steering magnetic portion; 302 second steering magnetic portion;

[0048] 401 a first offset magnetic region; 402 a second offset magnetic region;

[0049] 501 a first magnetic block; 502 a second magnetic block;

[0050] 601 is a transverse magnet; 602 is a longitudinal magnet. DETAILED DESCRIPTION

[0051] Reference Figure 8 and 9 A magnetic bar assembly proposed by the present invention comprises: a magnetic yoke 1 and a magnet array arranged on the magnetic yoke 1, wherein the magnet array forms a pattern including an inner part and an outer part surrounding the inner part on the magnetic yoke 1, wherein the inner part has a second magnetic property and the outer part has a first magnetic property;

[0052] The plurality of magnets include a straight region located in the middle and a turning region located at both ends of the straight region, the straight region includes two or three rows of magnets, the two or three rows of magnets form two first straight magnetic portions 201 located in the outer portion and a second straight magnetic portion 202 located in the inner portion; the turning region includes a magnet array, the magnet array forms a first turning magnetic portion 301 located in the outer portion and a second turning magnetic portion 302 located in the inner portion;

[0053] The turning area includes at least one offset segment, and the offset segment includes a first offset magnetic zone 401 located in the outer part and a second offset magnetic zone 402 located in the inner part, the first offset magnetic zone 401 has a first magnetism and the second offset magnetic zone 402 has a second magnetism, and the first offset magnetic zone 401 and the second offset magnetic zone 402 are offset along the width direction of the straight area to form a magnetic step.

[0054] In order to explain the specific working principle of the magnetic rod assembly of this embodiment in detail, refer to Figure 7This embodiment also proposes a magnetron sputtering device, which includes a rotating cathode and a target material 100 sleeved outside the rotating cathode. The rotating cathode includes the above-mentioned magnetic rod assembly and two end head assemblies 200 supporting both ends of the magnetic rod assembly. During operation, the magnetic rod located in the middle of the target material generates plasma through a magnetic field, bombards the peripheral target material, and sputters the target material particles onto the substrate 300 to be coated. At the same time, the target material is driven to rotate by the end head, so that the surface of the target material is evenly etched, thereby achieving continuous coating.

[0055] In actual design, the outside of the pattern is divided into an S-pole magnetic pole and the inside is divided into an N-pole magnetic pole, and the inner and outer parts form a runway-shaped magnetic field distribution. During the etching process, the turning areas at both ends of the magnetic bar assembly etch the ends of the target material. By adding magnetic steps in the turning area, the large turn of the pattern formed by the magnet in the turning area is changed into multiple small turns, thereby dividing one deep etching point into multiple deep etching points, reducing the etching speed at the end of the target material, and improving the utilization rate of the target material.

[0056] Reference Figure 8 In one way of forming the magnetic step, the first offset magnetic region 401 and the first linear magnetic portion 201 are offset in the width direction, and the second offset magnetic region 402 and the second linear magnetic portion 202 are offset in the width direction. The magnetic region of the offset segment and the magnetic region of the linear region are offset to form a step structure between the two.

[0057] In another way of forming the magnetic step, the turning area includes a plurality of offset segments arranged side by side along the extension direction of the straight area, and the first offset magnetic area 401 and the second offset magnetic area 402 of two adjacent offset segments are offset in the width direction to form the magnetic step, and the width of the plurality of first offset magnetic areas 401 gradually increases in the direction away from the straight area. The magnetic step can also be formed by offsetting the magnetic areas of two adjacent offset segments.

[0058] In the specific design, multiple offset segments can be set in the turning area to increase the number of deep etching points. The turning area includes a first offset segment and a second offset segment arranged along the width direction of the straight area, and the magnetic steps of the first offset segment and the second offset segment are staggered. When offset segments are set at the connection between the turning area and the straight area on both sides, the offset segments on both sides are staggered to avoid two deep etching points from etching the same area at the end of the target material.

[0059] In order to form a steering pattern with magnetic steps, e.g. Fig.10 As shown, a magnetic block array can be set in the turning area, each magnetic block is a longitudinal magnet, and its top magnetic pole is used. By selecting different magnetic blocks, the design of multiple etching deep point designated positions can be realized. When improving the existing magnetic rod, only the offset section can be designed.

[0060] Reference Fig.11 In a specific design of the magnetic block array, the offset section includes a first magnetic block 501 and a second magnetic block 502, wherein the first magnetic block 501 is located in the outer portion and the second magnetic block 502 is located in the inner portion. In actual design, longitudinal magnets of different sizes can be selected as magnetic blocks in adjacent regions of the same polarity. The position of the magnetic step can be adjusted by adjusting the size of the magnet. For example, the first magnetic block is an S pole and the second magnetic block is an N pole.

[0061] In this embodiment, in the specific design of the straight area, when the straight area is composed of three rows of magnets, longitudinal magnets using S poles are arranged on both sides, and longitudinal magnets using N poles are arranged in the middle.

[0062] Reference Fig.12 In another specific design of the magnetic block array, the offset section includes at least one first magnetic block 501 and at least one second magnetic block 502, and the at least one first magnetic block 501 and the at least one second magnetic block 502 are arranged in sequence along the width direction of the straight area. The magnet array can also select longitudinal magnets of the same size as magnetic blocks, and adjust the position of the magnetic step by adjusting the number of magnets in different areas.

[0063] Reference Fig.13 and 14 In another specific embodiment of the offset segment, the offset segment includes a transverse magnet 601 having a first magnetic property located at the outer portion and a second magnetic property located at the inner portion. By arranging the transverse magnet to span the two offset magnetic regions, only a small number of magnets need to be arranged in each offset segment to achieve the formation of the magnetic step.

[0064] In this embodiment, when the straight region includes three rows of magnets, Fig.15 , the straight area can be provided with transverse magnets on both sides and longitudinal magnets in the middle, so that one magnetic pole of the transverse magnet is located in the outer part, and the other magnetic pole and the longitudinal magnet are located in the inner part. When the straight area includes two rows of magnets, both rows use transverse magnets. The two rows of transverse magnets form S poles on both sides and N poles in the middle.

[0065] Further, in order to adjust the magnetic step position of different offset segments, refer to Fig.16 and 17, the offset section also includes a longitudinal magnet 602. In the specific setting, the transverse magnet 601 is located outside the longitudinal magnet 602, and the longitudinal magnet 602 has a second magnetism located in the inner part; or, the longitudinal magnet 602 is located outside the transverse magnet 601, and the longitudinal magnet 602 has a first magnetism located in the outer part. By adding the longitudinal magnet, the transverse magnet and the magnetic field of the adjacent area can be offset to form a magnetic step. When the longitudinal magnet is set outside the transverse magnet, the local pattern formed by the transverse magnet moves inward. On the contrary, when the longitudinal magnet is set inside the transverse magnet, the local pattern formed by the transverse magnet moves outward. Therefore, by adjusting the size of the longitudinal magnet, the position of the magnetic step can be adjusted.

[0066] In another embodiment, the offset of adjacent magnetic regions can be achieved by increasing the number of longitudinal magnets. In a specific design, the offset section includes a plurality of longitudinal magnets 602 arranged in sequence along the width direction, and the number of longitudinal magnets 602 in the plurality of offset sections gradually decreases or increases in the direction away from the linear region.

[0067] In actual design, those skilled in the art should understand that the longitudinal magnet of this embodiment is a magnet that uses one magnetic pole in the magnetic field, and the transverse magnet is a magnet that uses two magnetic poles in the magnetic field. The magnet shape can be selected in different shapes and structures such as vertical, horizontal, inclined, and special-shaped. The longitudinal magnet and the transverse magnet are only a distinction in the use of magnetic poles, not a limitation on the magnet structure.

[0068] In other specific embodiments, in order to make the etching speed at both ends of the target material consistent, the magnets in the two turning areas are arranged symmetrically about the straight area. Fig.18 and 19 The symmetrical arrangement can be centrally symmetrical or mirror symmetrical.

[0069] In this embodiment, the proposed magnetic bar assembly, magnetron sputtering rotating cathode and magnetron sputtering coating equipment, the magnet array of the magnetic bar includes a straight area located in the middle and a turning area located at both ends of the straight area, the turning area includes at least one offset segment, which includes a first offset magnetic area located outside the pattern and a second offset magnetic area located inside the pattern, the first offset magnetic area and the second offset magnetic area are offset along the width direction of the straight area to form a magnetic step. The two offset magnetic areas in the offset segment of the turning area are offset along the width direction to form a magnetic step, and the number of deep etching points in the turning area is increased without affecting the overall width of the magnetic bar, and the etching speed of a single point position is reduced, thereby improving the utilization rate of the target material, avoiding local etching at the end of the target material to be faster, and extending the service life of the target material.

[0070] The magnetic bar assembly of this embodiment is designed based on a three-row magnet structure, with three independent linear parallel magnets in the middle. The end of the magnetic bar adopts a combination of multiple groups of magnets of different sizes that are staggered and non-independent linear parallel to the central magnet. The magnetic field runway pattern (etching runway pattern) changes from a large turn to a small turn and at least one step turn, dividing a deep etching point in the prior art into multiple deep etching points, reducing the etching speed at the end of the target material and increasing the utilization rate of the target material. By arranging multiple groups of staggered outer magnets of different sizes, forming multiple small turns and dividing them into multiple deep etching points, the etching speed consistency of the center and end of the target material can be achieved, and the utilization rate of the target material can be optimally increased.

[0071] Compared with four or more rows of magnets, the magnetic bar assembly structure of this embodiment can achieve a smaller sputtering angle and improve the collection rate of the sputtered target material. It also occupies less space and is designed to be suitable for targets of different inner diameters, especially targets of small inner diameters.

[0072] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A magnetic bar assembly, characterized in that: include: A yoke (1) and a plurality of magnets, the plurality of magnets forming a pattern including an inner portion and an outer portion surrounding the inner portion on the yoke (1), the inner portion having a second magnetic property and the outer portion having a first magnetic property; The plurality of magnets include a straight region located in the middle and turning regions located at both ends of the straight region, the straight region includes two or three rows of magnets, the two or three rows of magnets form two first straight magnetic portions (201) located in the outer portion and a second straight magnetic portion (202) located in the inner portion; the turning region includes a magnet array, the magnet array forms a first turning magnetic portion (301) located in the outer portion and a second turning magnetic portion (302) located in the inner portion; The turning area comprises at least one offset segment, the offset segment comprises a first offset magnetic region (401) located at the outer portion and a second offset magnetic region (402) located at the inner portion, the first offset magnetic region (401) has a first magnetic property and the second offset magnetic region (402) has a second magnetic property, the first offset magnetic region (401) and the second offset magnetic region (402) are offset along the width direction of the straight region to form a magnetic step; The first offset magnetic zone (401) and the first straight magnetic portion (201) are offset in the width direction, and the second offset magnetic zone (402) and the second straight magnetic portion (202) are offset in the width direction; and / or the turning area comprises a plurality of offset segments arranged side by side along the extension direction of the straight area, the first offset magnetic zone (401) and the second offset magnetic zone (402) of two adjacent offset segments are offset in the width direction to form a magnetic step, and the width of the plurality of first offset magnetic zones (401) gradually increases in the direction away from the straight area.

2. The magnetic bar assembly according to claim 1, characterized in that: The turning area includes a first offset segment and a second offset segment arranged along the width direction of the straight area, and the magnetic steps of the first offset segment and the second offset segment are staggered.

3. The magnetic bar assembly according to claim 1 or 2, characterized in that: The first offset magnetic area (401) comprises a first magnetic block (501) and a second magnetic block (502), the first magnetic block (501) being located in the outer part, and the second magnetic block (502) being located in the inner part; And / or, the first offset magnetic region (401) comprises at least one first magnetic block (501) and at least one second magnetic block (502), and the at least one first magnetic block (501) and the at least one second magnetic block (502) are arranged in sequence along the width direction of the straight area.

4. The magnetic bar assembly according to any one of claims 1 or 2, characterized in that: The offset section includes a transverse magnet (601) having a first magnetic property located at the outer portion and a second magnetic property located at the inner portion.

5. The magnetic bar assembly according to claim 4, characterized in that: The offset section also includes a longitudinal magnet (602); The transverse magnet (601) is located outside the longitudinal magnet (602), and the longitudinal magnet (602) has a second magnetic property located in the inner portion; Alternatively, the longitudinal magnet (602) is located outside the transverse magnet (601), and the longitudinal magnet (602) has a first magnetic property located in the outer portion.

6. The magnetic bar assembly according to claim 5, characterized in that: The offset section comprises a plurality of longitudinal magnets (602) arranged in sequence along the width direction, and the number of the longitudinal magnets (602) of the plurality of offset sections gradually decreases or increases in a direction away from the straight region.

7. The magnetic bar assembly according to claim 1, characterized in that: The two deflection regions are arranged symmetrically with respect to the straight region.

8. A magnetron sputtering rotating cathode, characterized in that: The invention comprises the magnetic bar assembly according to any one of claims 1 to 7.

9. A magnetron sputtering coating device, characterized in that: It comprises the magnetron sputtering rotating cathode according to claim 8.

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