Nondestructive testing system and method for dislocation of semiconductor single crystal wafer

Abstract

The invention discloses a nondestructive testing system and method for dislocation of a semiconductor single crystal wafer. The system comprises a wafer objective table, a light diffractometer and a dislocation diffraction image analysis module, the light diffractometer comprises a detection light emitting device and a detection light receiving device. The wafer objective table is used for placing a single crystal wafer to be detected; the detection light emitting device is used for emitting first detection light to the single crystal wafer to be detected; the detection light receiving device is used for receiving second detection light formed by diffraction of the first detection light through a target crystal face of the single crystal wafer to be detected; generating a dislocation diffraction image of the target crystal face of the single crystal wafer to be detected based on the intensity of the second detection light; and the dislocation diffraction image analysis module is used for analyzing the dislocation diffraction image to obtain a dislocation detection result of the single crystal wafer to be detected. Therefore, nondestructive detection of the to-be-detected single crystal wafer is realized, and the dislocation detection cost of the to-be-detected single crystal wafer is further reduced.

Description

Technical Field

[0001] The present application relates to the technical field of defect detection of semiconductor single wafers, and in particular to a system and method for nondestructive detection of dislocations in semiconductor single wafers. Background Art

[0002] Dislocation refers to a microscopic defect inside a semiconductor. Its existence has a great influence on physical properties such as semiconductor mechanics. For example, silicon carbide SiC single crystal (or silicon carbide single wafer) is a representative material of the third generation of semiconductors, and it has important research value in many fields such as new energy vehicles, photovoltaics, and power grids. The carbon surface of silicon carbide can be used for crystal growth, and its silicon surface can be used for epitaxy. Whether it is crystal growth or epitaxy, dislocations will affect the quality of the subsequently grown crystals. Therefore, it is particularly important to detect dislocations in semiconductor single crystals.

[0003] In the prior art, the method for detecting dislocations in semiconductor single wafers is usually to selectively etch the semiconductor single wafer with a compound such as molten potassium hydroxide (KOH), amplify the dislocation defects in the wafer, and then take pictures and observe with an optical microscope to detect whether there are dislocations in the semiconductor single wafer.

[0004] However, in the above semiconductor single wafer dislocation detection method, the corroded wafer can no longer be used as a semiconductor manufacturing material. In other words, destructive detection of semiconductor single wafers easily leads to waste of materials, thereby increasing the dislocation detection cost of the wafer. Summary of the invention

[0005] In view of this, the embodiments of the present application provide a semiconductor single wafer dislocation non-destructive detection system and method, which aims to perform non-destructive detection of dislocations in semiconductor single wafers, thereby reducing the dislocation detection cost of semiconductor single wafers.

[0006] In a first aspect, an embodiment of the present application provides a semiconductor single wafer dislocation nondestructive detection system, the system comprising:

[0007] A wafer stage, a light diffractometer and a dislocation diffraction image analysis module; the light diffractometer includes a detection light emitting device and a detection light receiving device;

[0008] The wafer stage is used to place a single wafer to be tested;

[0009] The detection light emitting device is used to emit a first detection light to the single wafer to be detected;

[0010] The detection light receiving device is used to receive the second detection light formed by the first detection light diffracting through the target crystal plane of the single wafer to be detected; based on the intensity of the second detection light, generate a dislocation diffraction image of the target crystal plane of the single wafer to be detected;

[0011] The dislocation diffraction image analysis module is used to analyze the dislocation diffraction image to obtain the dislocation detection result of the single wafer to be detected.

[0012] Optionally, the target crystal plane includes a first type of crystal plane, the first type of crystal plane being a crystal plane whose included angle with the actual surface of the single wafer to be detected is smaller than a preset angle, and the detection light emitting device is specifically used for:

[0013] emitting a first detection light beam toward the first type of crystal plane of the single crystal wafer to be detected;

[0014] The detection light receiving device is specifically used for:

[0015] Receive a second detection light beam formed by diffracting the first detection light beam through the first type of crystal plane of the single crystal wafer to be detected; and generate a dislocation diffraction image in which the dislocation Burgers vector is perpendicular to the first type of crystal plane based on the intensity of the second detection light beam.

[0016] Optionally, the target crystal plane includes a second type of crystal plane, the second type of crystal plane is a crystal plane perpendicular to the first type of crystal plane, and the detection light emitting device is specifically used for:

[0017] emitting a first detection light beam toward the second type of crystal plane of the single crystal wafer to be detected;

[0018] The detection light receiving device is specifically used for:

[0019] A second detection light beam is received when the first detection light beam penetrates the single crystal wafer to be detected and is diffracted by the second type of crystal plane; and a dislocation diffraction image in which the dislocation Burgers vector is perpendicular to the second type of crystal plane is generated based on the intensity of the second detection light beam.

[0020] Optionally, the wafer stage is further used for:

[0021] The single wafer to be inspected is moved based on scanning a preset path of the detection light.

[0022] Optionally, the preset detection light scanning path includes at least one of a matrix pattern path, a local rectangular path, a cross path or a cross path.

[0023] Optionally, the dislocation diffraction image analysis module is specifically used to:

[0024] Based on the shape features corresponding to the target dislocation type in the dislocation diffraction image of the single wafer to be inspected, the dislocation distribution of the dislocations belonging to the target dislocation type in the single wafer to be inspected is determined.

[0025] Optionally, the dislocation diffraction image analysis module is specifically used to:

[0026] Based on the shape features corresponding to the target dislocation type in the dislocation diffraction image of the single wafer to be detected and the surface area of ​​the actual surface of the single wafer to be detected, the dislocation density distribution of dislocations belonging to the target dislocation type in the single wafer to be detected is determined.

[0027] Optionally, the dislocation diffraction image analysis module is further used to:

[0028] Based on the dislocation density distribution of dislocations belonging to the target dislocation type in the single wafer to be inspected, a dislocation density distribution map corresponding to the dislocations belonging to the target dislocation type is generated.

[0029] Optionally, the first detection light includes a first X-ray; and the second detection light includes a second X-ray.

[0030] In a second aspect, an embodiment of the present application provides a semiconductor single wafer dislocation nondestructive detection method, which is applied to a semiconductor single wafer dislocation nondestructive detection system, the system comprising: a wafer stage, a light diffractometer and a dislocation diffraction image analysis module, the light diffractometer comprising a detection light emitting device and a detection light receiving device, the method comprising:

[0031] The detection light emitting device emits a first detection light to the single wafer to be detected; the wafer to be detected is placed on the wafer stage;

[0032] The detection light receiving device receives a second detection light formed by diffracting the first detection light through the target crystal plane of the single wafer to be detected;

[0033] The detection light receiving device generates a dislocation diffraction image of a target crystal plane of the single wafer to be detected based on the intensity of the second detection light;

[0034] The dislocation diffraction image analysis module analyzes the dislocation diffraction image to obtain a dislocation detection result of the single wafer to be detected.

[0035] In a third aspect, an embodiment of the present application provides a semiconductor single wafer dislocation nondestructive detection device, the device comprising a memory and a processor:

[0036] The memory is used to store a computer program and transmit the computer program to the processor;

[0037] The processor is used to execute the computer program so that the device executes the semiconductor single wafer dislocation non-destructive detection method described in the second aspect.

[0038] In a fourth aspect, an embodiment of the present application provides a computer-readable storage medium having a computer program stored thereon. When the computer program is executed, the device executing the computer program implements the semiconductor single wafer dislocation non-destructive detection method described in the second aspect above.

[0039] Compared with the prior art, the embodiments of the present application have the following beneficial effects:

[0040] The embodiment of the present application provides a semiconductor single wafer dislocation non-destructive detection system and method. The system includes: a wafer stage, a light diffractometer and a dislocation diffraction image analysis module; the light diffractometer includes a detection light emitting device and a detection light receiving device. Among them, the wafer stage is used to place the single wafer to be detected; the detection light emitting device is used to emit a first detection light to the single wafer to be detected; the detection light receiving device is used to receive the second detection light formed by the first detection light diffracting through the target crystal plane of the single wafer to be detected; based on the intensity of the second detection light, a dislocation diffraction image of the target crystal plane of the single wafer to be detected is generated; the dislocation diffraction image analysis module is used to analyze the dislocation diffraction image to obtain the dislocation detection result of the single wafer to be detected. It can be seen that the system does not need to use compounds such as molten potassium hydroxide to damage the single wafer to be tested. It only needs the semiconductor single wafer dislocation nondestructive detection system to detect the dislocation of the single wafer to be tested. The first detection light emitted by the light diffractometer in the semiconductor single wafer dislocation nondestructive detection system will not cause damage to the single wafer to be tested. Therefore, nondestructive testing of the single wafer to be tested can be achieved, avoiding waste of materials, and thereby reducing the dislocation detection cost of semiconductor single wafers.

[0041] In addition, when using molten KOH and other compounds to detect dislocations in semiconductor single wafers, 1-2 wafers are usually selected from a column of semiconductor single wafers as the single wafers to be detected, and the dislocation detection results of the single wafers to be detected are used as the dislocation detection results of the entire column of semiconductor single wafers. The semiconductor single wafer dislocation nondestructive detection system in the present application can realize nondestructive detection of dislocations of multiple or each wafer in the entire column of semiconductor single wafers, thereby effectively improving the accuracy of the dislocation detection results of the entire column of semiconductor single wafers. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] In order to more clearly illustrate the technical solutions in this embodiment or the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0043] Figure 1 A schematic diagram of the structure of a semiconductor single wafer dislocation nondestructive detection system provided in an embodiment of the present application;

[0044] Figure 2 A schematic diagram of a light diffractometer in a reflection mode provided in an embodiment of the present application;

[0045] Figure 3 A schematic diagram of a light diffractometer in a transmission mode provided in an embodiment of the present application;

[0046] Figure 4 A dislocation diffraction image of a sample 1 in a reflection mode provided in an embodiment of the present application;

[0047] Figure 5 A dislocation density distribution diagram of screw dislocations of a sample 1 provided in an embodiment of the present application;

[0048] Figure 6 A dislocation diffraction image of a sample 2 in a reflection mode provided in an embodiment of the present application;

[0049] Figure 7 A dislocation density distribution diagram of screw dislocations of a sample 2 provided in an embodiment of the present application;

[0050] Figure 8 A dislocation diffraction image of a sample 3 in a reflection mode provided in an embodiment of the present application;

[0051] Fig. 9 A dislocation density distribution diagram of a screw dislocation of a sample 3 provided in an embodiment of the present application;

[0052] Fig.10 A dislocation diffraction image of a sample 1 in a transmission mode provided in an embodiment of the present application;

[0053] Fig.11 A dislocation density distribution diagram of edge dislocations of a sample 1 provided in an embodiment of the present application;

[0054] Fig.12 A dislocation density distribution diagram of basal plane dislocation of a sample 1 provided in an embodiment of the present application;

[0055] Fig.13 A dislocation diffraction image of a sample 4 in a transmission mode provided in an embodiment of the present application;

[0056] Fig.14 A dislocation density distribution diagram of edge dislocations of a sample 4 provided in an embodiment of the present application;

[0057] Fig.15 A dislocation density distribution diagram of basal plane dislocation of a sample 4 provided in an embodiment of the present application;

[0058] Fig.16A dislocation diffraction image of a sample 3 in transmission mode provided in an embodiment of the present application;

[0059] Fig.17 A dislocation density distribution diagram of edge dislocations of a sample 3 provided in an embodiment of the present application;

[0060] Fig.18 A dislocation density distribution diagram of basal plane dislocation of a sample 3 provided in an embodiment of the present application;

[0061] Fig.19 A comparative schematic diagram of a screw dislocation provided in an embodiment of the present application;

[0062] Fig. 20 A flowchart of a method for nondestructive detection of dislocations in a semiconductor single wafer provided in an embodiment of the present application. DETAILED DESCRIPTION

[0063] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0064] First, several terms that may be involved in the embodiments of the present application are explained below.

[0065] Silicon carbide: It is a representative material of the third-generation semiconductors. It is used to make power devices and can significantly improve the utilization rate of electrical energy.

[0066] Gallium nitride: is a semiconductor material and a high-performance crystal used to manufacture optoelectronic devices.

[0067] X-ray: It is an electromagnetic wave with extremely high frequency, extremely short wavelength and great energy. X-rays are penetrating. When X-rays are emitted to an object, corresponding images can be obtained according to the degree of absorption of the X-rays.

[0068] At present, the existing semiconductor single wafer dislocation detection method is as follows: first select 1-2 semiconductor single wafers from a column of semiconductor single wafers as the single wafers to be detected. Then use molten KOH and other compounds to corrode the semiconductor single wafer to amplify the dislocation defects in the wafer; then, use an optical microscope to select several areas of the corroded wafer for photography and observation. Subsequently, calculate the total number of dislocations and the number of different types of dislocations in each observation area to obtain the dislocation detection result of the corroded wafer, which is used as the dislocation detection result of the entire column of semiconductor single wafers. However, in this semiconductor single wafer dislocation detection method, it is necessary to perform corrosion detection on the wafer, that is, destructive detection, and the corroded wafer can no longer be used as a semiconductor manufacturing material. It is easy to cause waste of semiconductor materials, which in turn leads to an increase in the dislocation detection cost of semiconductor single wafers.

[0069] Based on this, in order to solve the above problems, the embodiments of the present application provide a semiconductor single wafer dislocation non-destructive detection system and method. The semiconductor single wafer dislocation non-destructive detection system includes: a wafer stage, a light diffractometer and a dislocation diffraction image analysis module; the light diffractometer includes a detection light emitting device and a detection light receiving device. Among them, the wafer stage is used to place the single wafer to be detected; the detection light emitting device is used to emit a first detection light to the single wafer to be detected; the detection light receiving device is used to receive the second detection light formed by the first detection light diffracting through the target crystal plane of the single wafer to be detected; based on the intensity of the second detection light, a dislocation diffraction image of the target crystal plane of the single wafer to be detected is generated; the dislocation diffraction image analysis module is used to analyze the dislocation diffraction image to obtain the dislocation detection result of the single wafer to be detected. It can be seen that the system does not need to use molten KOH and other compounds to damage the single wafer to be tested. It only needs the semiconductor single wafer dislocation nondestructive detection system to detect the dislocation of the single wafer to be tested. The first detection light emitted by the light diffractometer in the semiconductor single wafer dislocation nondestructive detection system will not cause damage to the single wafer to be tested. Therefore, nondestructive testing of the single wafer to be tested can be achieved, avoiding waste of materials, and thereby reducing the dislocation detection cost of semiconductor single wafers.

[0070] In addition, when using molten KOH and other compounds to detect the dislocation of semiconductor single wafers, 1-2 wafers are usually selected from a column of semiconductor single wafers as the single wafers to be detected, and the dislocation detection results of the single wafers to be detected are used as the dislocation detection results of the entire column of semiconductor single wafers, which easily leads to a reduction in the accuracy of the dislocation detection results of other single wafers in the column of semiconductor single wafers. The semiconductor single wafer dislocation nondestructive detection system in this application can realize nondestructive detection of dislocations of multiple or each wafer in the entire column of semiconductor single wafers, thereby effectively improving the accuracy of the dislocation detection results of the entire column of semiconductor single wafers.

[0071] The specific implementation of the semiconductor single wafer dislocation nondestructive detection system and method in the embodiment of the present application is described in detail below with reference to the accompanying drawings by way of examples.

[0072] See also Figure 1 , which is a schematic diagram of the structure of a semiconductor single wafer dislocation nondestructive detection system provided in an embodiment of the present application, combined with Figure 1 As shown, the semiconductor single wafer dislocation nondestructive detection system 100 may specifically include: a wafer stage 110, a light diffractometer 120 and a dislocation diffraction image analysis module 130; the light diffractometer 120 includes a detection light emitting device 121 and a detection light receiving device 122;

[0073] The wafer stage 110 is used to place a single wafer to be inspected.

[0074] In the embodiment of the present application, the single wafer to be tested refers to a semiconductor single wafer that needs to be tested for dislocation. As an example, the semiconductor single wafer can be a silicon carbide single wafer, a gallium nitride single wafer, or a silicon single wafer, which is not limited in the present application.

[0075] For ease of understanding, the semiconductor single wafer dislocation nondestructive detection system and method provided in the present application are specifically described in the following text by taking the single wafer to be inspected as a silicon carbide single wafer to be inspected as an example.

[0076] For example, the silicon carbide single crystal wafer can be a 2-inch, 3-inch, 4-inch, 6-inch and 8-inch standard silicon carbide single crystal wafer. The present application does not limit the size of the silicon carbide single crystal wafer to be detected. In addition, the silicon carbide single crystal wafer can also include a 4H conductive type silicon carbide single crystal wafer and a 4H semi-insulating type silicon carbide single crystal wafer. The present application does not limit the conductive type of the silicon carbide single crystal wafer to be detected.

[0077] It should be emphasized that the silicon carbide single crystal wafer is a polished wafer.

[0078] It is understandable that, for the silicon carbide single wafer to be detected, there will be a collection point when the first detection light emitted by the light diffractometer 120 is irradiated on the silicon carbide single wafer to be detected, and the dislocation of the silicon carbide single wafer to be detected may not be accurately detected based on only one collection point. At the same time, considering that the position and angle of the detection light emitting device 121 and the detection light receiving device 122 need to be adjusted multiple times when moving the light diffractometer 120, it is easy to cause additional workload for the non-destructive detection of dislocations of silicon carbide single wafers. Therefore, in a possible implementation of the present application. The wafer stage 110 can also be used to: move the silicon carbide single wafer to be detected based on the preset path of the detection light scanning. That is, the wafer stage 110 moves the silicon carbide single wafer to be detected, so that the light diffractometer 120 is irradiated multiple times to form multiple collection points formed by the silicon carbide single wafer to be detected, which can constitute a preset path for the detection light scanning. Among them, the preset path for the detection light scanning is a scanning path of the detection light pre-set in the silicon carbide single wafer to be detected.

[0079] In a possible implementation of the present application, the preset path of the detection light scanning may be at least one of a matrix pattern path, a local rectangular path, a cross path or a cross path, and the present application does not limit this. Among them, the cross path is two mutually perpendicular diameters in the silicon carbide single crystal to be detected, and multiple collection points are distributed on the cross path. The cross path is composed of multiple diameters in the silicon carbide single crystal to be detected. The matrix pattern path includes multiple collection points arranged in a vertical and horizontal matrix manner. Among them, the matrix pattern path includes a grid matrix path and a continuous matrix path. Specifically, a plurality of collection points in the grid matrix path may include preset intervals; and a plurality of collection points in the continuous matrix path may contact each other. The present application does not limit this.

[0080] In addition, the wafer stage 110 can also move the silicon carbide single wafer to be inspected at a preset moving speed. For example, the preset moving speed can be 1-50 mm per minute; the preset moving speed can also be 5-30 mm per minute; the preset moving speed can also be 10-20 mm per minute. It can be seen that according to the preset moving speed, the exposure time of the collection point can be optimized to form a higher quality dislocation diffraction image.

[0081] In a possible implementation of the present application, the wafer stage 110 can perform X-axis movement, Y-axis movement and φ-axis rotation when moving the silicon carbide single wafer to be inspected, so that the sampling points on the silicon carbide single wafer to be inspected can form a preset path for the detection light scan.

[0082] The detection light emitting device 121 is used to emit a first detection light to the silicon carbide single wafer to be detected.

[0083] The detection light receiving device 122 is used to receive the second detection light formed by the diffraction of the first detection light through the target crystal plane of the silicon carbide single crystal wafer to be detected; based on the intensity of the second detection light, generate a dislocation diffraction image of the silicon carbide single crystal wafer to be detected.

[0084] In the embodiment of the present application, the first detection light emitted by the detection light emitting device 121 in the light diffractometer 120 can excite the silicon carbide single wafer to be detected, so that the detection light receiving device 122 can receive the second detection light formed by the first detection light diffracting through the target crystal plane of the silicon carbide single wafer to be detected. Then, according to the intensity of the second detection light, a dislocation diffraction image of the silicon carbide single wafer to be detected is generated.

[0085] In a possible implementation of the present application, the first detection light may include a first X-ray, and the second detection light may include a second X-ray. That is, the light diffractometer 120 may be an X-ray diffractometer, the detection light emitting device 121 may be an X-ray emitting device, and the detection light receiving device 122 may be an X-ray receiving device.

[0086] For ease of understanding, in the following embodiments, the detection light emitting device 121 is an X-ray emitting device; the detection light receiving device 122 is an X-ray receiving device as an example to specifically introduce the semiconductor single wafer dislocation nondestructive detection system provided in the embodiments of the present application.

[0087] In a possible implementation of the present application, the target crystal plane includes a first type of crystal plane, the first type of crystal plane is a crystal plane whose angle with the actual surface of the silicon carbide single crystal wafer to be detected is less than a preset angle, and the X-ray emitting device can be specifically used to emit a first X-ray to the first type of crystal plane of the silicon carbide single crystal wafer. Correspondingly, the X-ray receiving device can be specifically used to receive a second X-ray formed by the first X-ray diffracted by the first type of crystal plane of the silicon carbide single crystal wafer; and based on the intensity of the second X-ray, generate a dislocation diffraction image in which the dislocation Burgers vector is perpendicular to the first type of crystal plane.

[0088] The actual surface of the silicon carbide single crystal wafer may be the surface of the silicon carbide single crystal wafer used to form an epitaxial layer (or may be referred to as the main surface of the silicon carbide single crystal wafer). For example, the carbon surface of the silicon carbide single crystal wafer may be placed on the wafer stage 110 with the carbon surface facing upward and the silicon surface facing downward, and the carbon surface of the silicon carbide single crystal wafer may be used as the actual surface. Alternatively, the silicon surface of the silicon carbide single crystal wafer may be placed on the wafer stage 110 with the silicon surface facing upward and the carbon surface facing downward, and the silicon surface of the silicon carbide single crystal wafer may be used as the actual surface. This application does not limit this.

[0089] The first type of crystal plane can be a crystal plane such as the 0001 plane, the 0004 plane or the 0008 plane of the silicon carbide single crystal, which are all crystal planes whose angle with the actual surface is less than the preset angle. This application does not limit this. Among them, the preset angle can be 20°, which is not limited by this application.

[0090] The dislocation types of silicon carbide single crystal wafers are mainly divided into screw dislocations, edge dislocations and basal plane dislocations. In the present application, a light diffractometer 120 in reflection mode is used to obtain a dislocation diffraction image about the dislocation Burgers vector perpendicular to the first type of crystal plane, that is, a screw dislocation diffraction image of the silicon carbide single crystal wafer. Screw dislocations mainly appear as points. In the embodiment of the present application, a light diffractometer 120 in transmission mode is used to obtain a dislocation diffraction image about the dislocation Burgers vector perpendicular to the second type of crystal plane, including an edge dislocation diffraction image of a silicon carbide single crystal wafer, and a basal plane dislocation diffraction image of a silicon carbide single crystal wafer. Edge dislocations mainly appear as dots or long dots, and basal plane dislocations mainly appear as lines.

[0091] As an example, see Figure 2 , which is a schematic diagram of a light diffractometer provided in an embodiment of the present application in a reflection mode. Figure 2 As shown, the light diffractometer is in reflection mode, that is, the goniometer of the X-ray emitting device is adjusted so that the X-ray emitting device is located above the right side of the main surface of the silicon carbide single wafer; the goniometer of the X-ray receiving device is adjusted so that the X-ray receiving device is located above the left side of the main surface of the silicon carbide single wafer, so as to perform diffraction imaging of the first type crystal plane of the silicon carbide single wafer in reflection mode.

[0092] As an example, after the position of the X-ray emitting device and the position of the X-ray receiving device are adjusted by adjusting the goniometer, the X-ray emitting device can use a Cu target to emit a wavelength of about Dislocation detection is performed on a silicon carbide single wafer to be detected with a deflection angle of -20 to 20 degrees. The present application does not impose any restrictions on the deflection angle of the silicon carbide single wafer to be detected, the wavelength of the X-ray emission device, etc.

[0093] In a possible implementation of the present application, the target crystal plane may include a second type of crystal plane, the second type of crystal plane is a crystal plane perpendicular to the first type of crystal plane, and the X-ray emitting device can be specifically used to emit a first X-ray to the second type of crystal plane of the silicon carbide single crystal wafer; the second type of crystal plane is a crystal plane that is alternately perpendicular to the first type of crystal plane; accordingly, the X-ray receiving device can be specifically used to receive a second X-ray formed by the first X-ray penetrating the silicon carbide single crystal wafer and diffracting the second type of crystal plane; based on the intensity of the second X-ray, a dislocation diffraction image is generated in which the dislocation Burgers vector is perpendicular to the second type of crystal plane.

[0094] The second type of crystal plane of the silicon carbide single crystal wafer can be (also called main locating edge) or (also called secondary positioning edge) and so on are the crystal planes of the crystal plane cluster.

[0095] As an example, see Figure 3 , which is a schematic diagram of a light diffractometer provided in an embodiment of the present application in a transmission mode. Figure 3 As shown, the light diffractometer is in the transmission mode, that is, the goniometer of the X-ray emitting device is adjusted so that the X-ray emitting device is located below the right side of the main surface of the silicon carbide single wafer; the goniometer of the X-ray receiving device is adjusted so that the X-ray receiving device is located above the right side of the main surface of the silicon carbide single wafer, so as to perform diffraction imaging of the second type crystal plane of the silicon carbide single wafer in the transmission mode.

[0096] As an example, after the position of the X-ray emitting device and the position of the X-ray receiving device are adjusted by adjusting the goniometer, the X-ray emitting device can use the Mo target to emit a wavelength of about The dislocation detection is performed on the second type crystal plane of the silicon carbide single crystal wafer to be detected with a deflection angle of -20 to 20 degrees. The present application does not limit the deflection angle of the silicon carbide single crystal wafer to be detected, the wavelength of the X-ray emission device, etc.

[0097] The dislocation diffraction image analysis module 130 is used to analyze the dislocation diffraction image to obtain the dislocation detection result of the silicon carbide single wafer to be detected.

[0098] In a possible implementation of the present application, the dislocation diffraction image analysis module 130 can determine the dislocation distribution of dislocations belonging to the target dislocation type in the silicon carbide single wafer to be inspected based on the shape features corresponding to the target dislocation type in the dislocation diffraction image of the silicon carbide single wafer to be inspected.

[0099] There is no limit on the number of target dislocation types. For example, the dislocation diffraction image may include shape features corresponding to one dislocation type, or may include shape features corresponding to two dislocation types. Based on the above example, taking a silicon carbide single crystal wafer as an example, its dislocation types are mainly divided into screw dislocations, edge dislocations, and basal plane dislocations.

[0100] In a possible implementation of the present application, the dislocation diffraction image analysis module 130 can determine the dislocation density distribution of dislocations belonging to the target dislocation type in the silicon carbide single wafer to be detected based on the shape features corresponding to the target dislocation type in the dislocation diffraction image of the silicon carbide single wafer to be detected and the surface area of ​​the actual surface of the silicon carbide single wafer to be detected.

[0101] As an example, different dislocation types have different shape characteristics. For example, screw dislocations are mainly dot-shaped. Edge dislocations are mainly round or long dots, and basal plane dislocations are mainly linear. If the dislocation detection of the surface is performed by diffraction imaging, the dislocation diffraction image analysis module 130 can obtain the dislocation distribution of the edge dislocation according to the shape characteristics of the dots or long dots in the dislocation diffraction image. Similarly, the dislocation diffraction image analysis module 130 can obtain the dislocation distribution of the basal plane dislocation according to the shape characteristics of the lines in the dislocation diffraction image.

[0102] As an example, if dislocation detection is performed on the 0001 surface of the silicon carbide single wafer, the dislocation diffraction image analysis module 130 can obtain the distribution of screw dislocations according to the points in the dislocation diffraction image corresponding to the 0001 surface of the silicon carbide single wafer. On this basis, the dislocation diffraction image analysis module 130 can calculate the dislocation density distribution of screw dislocations on the 0001 surface of the silicon carbide single wafer based on the surface area of ​​the 0001 surface of the silicon carbide single wafer and the distribution of screw dislocations.

[0103] In a possible implementation of the present application, the dislocation diffraction image analysis module 130 can also be used to generate a dislocation density distribution map corresponding to dislocations of the target dislocation type based on the dislocation density distribution of dislocations of the target dislocation type in the silicon carbide single wafer to be detected.

[0104] In addition, in a possible implementation of the present application, the dislocation diffraction image analysis module 130 can also store the dislocation detection results of the silicon carbide single wafer, which can specifically include information such as the dislocation distribution, dislocation density distribution, and dislocation density distribution map of the silicon carbide single wafer. It can be seen that when the technician has a need to view the dislocation detection results, in response to the technician's triggering operation, the dislocation density distribution map of the silicon carbide single wafer can be displayed, so that the technician can view the dislocation detection results of the silicon carbide single wafer at any time.

[0105] As an implementation method, in the dislocation density distribution diagram of the silicon carbide single crystal wafer, different colors can be used to represent different density values; different shades of the same color can also be used to represent different density values. Thus, the visibility of the dislocation density distribution diagram is improved, making it easier for technicians to view.

[0106] In order to improve the resolution of the dislocation diffraction image, the pixel parameter binning in the image can be pre-set. For example, binning can be set to 1x1 to 10x10. Among them, when binning is set to 1x1 to 3x3, especially 2x2, the image resolution and image size are better.

[0107] For ease of understanding, the following specifically introduces the semiconductor single wafer dislocation nondestructive detection system provided in the embodiment of the present application for dislocation detection of screw dislocations of a silicon carbide single wafer to be detected.

[0108] As an example, the semiconductor single wafer dislocation nondestructive detection system provided in the embodiment of the present application can be used to detect screw dislocations on a 6-inch-4H-N type silicon carbide single wafer 1 (referred to as sample 1) with a 4° deflection angle. First, the silicon carbide single wafer 1 is placed on the wafer stage 110, with the silicon surface of the silicon carbide single wafer 1 facing upwards and the secondary positioning edge facing upwards. Facing left, primary positioning edge Perpendicular to the secondary positioning edge. Set the preset path of the detection light scan to a continuous matrix path, with a scanning range of 156mmx156mm and a scanning speed of 20mm / min. Adjust the goniometer of the X-ray emitting device so that the incident angle of the first X-ray emitted by the X-ray emitting device is 33.81° (the incident angle is the angle between the first X-ray and the main surface of the silicon carbide single crystal wafer to be detected), and adjust the goniometer of the X-ray receiving device so that the receiving angle of the second X-ray received by the X-ray receiving device is 41.81° (the receiving angle is the angle between the second X-ray and the main surface of the silicon carbide single crystal wafer to be detected). Set the image parameters to 2×2. Then, the Cu target of the X-ray emitting device is used to emit the first X-ray to the 0008 surface of the silicon carbide single crystal wafer 1, and the X-ray receiving device receives the second X-ray. At the same time, the wafer stage 110 moves according to the continuous matrix path to generate a dislocation diffraction image of the screw dislocation of the silicon carbide single crystal wafer 1. For details, please refer to Figure 4 The dislocation diffraction image of sample 1 in reflection mode is shown. Figure 4 The left part is the dislocation diffraction image of the screw dislocation of the whole silicon carbide single crystal wafer 1. Figure 4 The right part is a dislocation diffraction image of a locally enlarged screw dislocation of the silicon carbide single crystal wafer 1 .

[0109] Then, the dislocation diffraction image analysis module 130 can set the image analysis parameters, set the identification value of the screw dislocation to 15, and set the segmentation size of the dislocation diffraction image to 4mmx4mm. The dislocation diffraction image analysis module 130 then identifies the distribution of the screw dislocations in the dislocation diffraction image, calculates the distribution density of the screw dislocations, and generates a dislocation density distribution map. For details, see Figure 5 The dislocation density distribution diagram of screw dislocation of sample 1 is shown. Figure 5 As shown, the number in each small square represents the distribution density of screw dislocations at that location.

[0110] As an example, the semiconductor single wafer dislocation nondestructive detection system provided in the embodiment of the present application can also be used to perform dislocation detection of screw dislocations on a 4inch-4H-N type silicon carbide single wafer 2 (which can be called sample 2) with a 2° deviation angle. The preset path of the detection light scan is set to a local rectangular path, the scanning range is 44mmx28mm, and the scanning speed is 5mm / min. Adjust the goniometer so that the incident angle of the first X-ray emitted by the X-ray emitting device is 35.81°, and the receiving angle of the second X-ray received by the X-ray receiving device is 39.81°. Set the image parameters to 1×1. Then, the Cu target of the X-ray emitting device is used to emit the first X-ray to the 0008 surface of the silicon carbide single wafer 1, and the X-ray receiving device receives the second X-ray. At the same time, the wafer stage 110 moves according to the local rectangular path to generate a dislocation diffraction image of the screw dislocation of the silicon carbide single wafer 2. For details, please refer to Figure 6 The dislocation diffraction image of sample 2 in the reflection mode is shown. Then the dislocation diffraction image analysis module 130 can identify the distribution of screw dislocations in the dislocation diffraction image, calculate the distribution density of screw dislocations, and generate a dislocation density distribution map. For details, please refer to Figure 7 The dislocation density distribution diagram of screw dislocations of sample 2 is shown.

[0111] As an example, see Figure 8 , which is a dislocation diffraction image of a sample 3 provided in an embodiment of the present application in a reflection mode. Fig. 9 , which is a dislocation density distribution diagram of screw dislocations of a sample 3 provided in an embodiment of the present application. Figure 8 and Fig. 9 All of them are obtained by performing screw dislocation detection on a 6-inch-4H-V type silicon carbide single wafer 3 (which can be called sample 3) with a 0° bias angle through the semiconductor single wafer dislocation nondestructive detection system provided in the embodiments of the present application. Among them, the preset path of the detection light scanning is set to a continuous matrix path, the scanning range is 156mmx156mm, and the scanning speed is 20mm / min. The incident angle of the first X-ray emitted by the X-ray emitting device is 37.81°, and the receiving angle of the second X-ray received by the X-ray receiving device is 37.81°. The image parameters are set to 2×2. The first X-ray is then emitted by the Cu target of the X-ray emitting device to the 0008 surface of the silicon carbide single wafer 3. The specific implementation method can be referred to the above example, which will not be repeated here.

[0112] Next, the semiconductor single wafer dislocation nondestructive detection system provided in the embodiment of the present application for performing dislocation detection of edge dislocations and basal plane dislocations on a silicon carbide single wafer to be inspected is specifically introduced.

[0113] As an example, the semiconductor single wafer dislocation nondestructive detection system provided in the embodiment of the present application can be used to detect edge dislocation and basal plane dislocation of a 6-inch-4H-N type silicon carbide single wafer 1 (referred to as sample 1) with a 4° off-angle. First, the silicon carbide single wafer 1 is placed on the wafer stage 110, with the silicon surface of the silicon carbide single wafer 1 facing upwards and the secondary positioning edge facing upwards. Facing left, primary positioning edge Perpendicular to the secondary positioning edge. Set the preset path of the detection light scan to a continuous matrix path, with a scanning range of 156mmx156mm and a scanning speed of 10mm / min. Adjust the goniometer of the X-ray emitting device, so that the incident angle of the first X-ray emitted by the X-ray emitting device is -72.65°, and adjust the goniometer of the X-ray receiving device so that the receiving angle of the second X-ray received by the X-ray receiving device is 99.35°. Set the image parameters to 2×2. Then use the Mo target of the X-ray emitting device to scan the silicon carbide single wafer 1 The surface emits the first X-ray, and the X-ray receiving device receives the second X-ray. At the same time, the wafer stage 110 moves along a continuous matrix path to generate dislocation diffraction images of edge dislocations and basal plane dislocations of the silicon carbide single wafer 1. For details, see Fig.10 The dislocation diffraction image of sample 1 in transmission mode is shown. Fig.10 The left part is the dislocation diffraction image of the edge dislocation and basal plane dislocation of the whole silicon carbide single crystal wafer 1. Fig.10 The right part is a locally enlarged dislocation diffraction image of edge dislocation and basal plane dislocation of the silicon carbide single crystal wafer 1.

[0115] Then, the dislocation diffraction image analysis module 130 can set the image analysis parameters, set the recognition value of edge dislocation to 25, set the recognition value of basal plane dislocation to 1, and set the segmentation size of the dislocation diffraction image to 4mmx4mm. The dislocation diffraction image analysis module 130 then identifies the distribution of edge dislocations and basal plane dislocations in the dislocation diffraction image, calculates the distribution density of edge dislocations and basal plane dislocations, and generates corresponding dislocation density distribution maps. For details, please refer to Fig.11 The dislocation density distribution of edge dislocations of sample 1 shown in FIG. Fig.12 The dislocation density distribution diagram of basal plane dislocation of sample 1 is shown.

[0116] As an example, the semiconductor single wafer dislocation nondestructive detection system provided in the embodiment of the present application can also be used to perform dislocation detection on the 8inch-4H-N type silicon carbide single wafer 4 (which can be called sample 4) with a 2° deviation angle for edge dislocation and basal plane dislocation. Set the preset path of the detection light scan to a local rectangular path, the scanning range to 28mmx28mm, and the scanning speed to 5mm / min. Adjust the goniometer so that the incident angle of the first X-ray emitted by the X-ray emitting device is -74.65°, and the reflection angle of the second X-ray received by the X-ray receiving device is 101.35°. Set the image parameters to 1×1. Then use the Mo target of the X-ray emitting device to detect the silicon carbide single wafer 4 The surface emits the first X-ray, the X-ray receiving device receives the second X-ray, and at the same time, the wafer stage 110 moves along the local rectangular path to generate the dislocation diffraction images of the edge dislocation and the basal plane dislocation of the silicon carbide single wafer 4. For details, please refer to Fig.13 The dislocation diffraction image of the sample 4 in the transmission mode is shown. Then the dislocation diffraction image analysis module 130 can identify the distribution of edge dislocations and basal plane dislocations in the dislocation diffraction image, calculate the distribution density of edge dislocations and basal plane dislocations, and generate corresponding dislocation density distribution diagrams. For details, please refer to Fig.14 The dislocation density distribution diagram of edge dislocation of sample 4 shown in FIG. Fig.15 The dislocation density distribution diagram of basal plane dislocation of sample 4 is shown.

[0117] As an example, see Fig.16 , which is a dislocation diffraction image of a sample 3 provided in an embodiment of the present application in a transmission mode. Fig.17 , which is a dislocation density distribution diagram of edge dislocations of a sample 3 provided in an embodiment of the present application. Fig.18 , which is a dislocation density distribution diagram of basal plane dislocation of a sample 3 provided in an embodiment of the present application. Figure 16-18 All of them are obtained by performing dislocation detection of edge dislocation and basal plane dislocation on a 6-inch-4H-V type silicon carbide single crystal wafer 3 (referred to as sample 3) with a 0° bias angle through the semiconductor single crystal dislocation nondestructive detection system provided in the embodiments of the present application. Among them, the preset path of the detection light scanning is set to a continuous matrix path, the scanning range is 156mmx156mm, and the scanning speed is 30mm / min. The incident angle of the first X-ray emitted by the X-ray emitting device is -76.65°, and the receiving angle of the second X-ray received by the X-ray receiving device is 103.35°. The image parameters are set to 3×3. Then, the Mo-targeted silicon carbide single crystal wafer 3 of the X-ray emitting device is The first X-ray is emitted. The specific implementation can refer to the above examples, which will not be described in detail here.

[0118] In addition, see Fig.19 , which is a comparative schematic diagram of a screw dislocation provided in an embodiment of the present application. Fig.19 As shown, Fig.19 The left part is an image taken after etching a silicon carbide single crystal wafer using molten potassium hydroxide in the prior art. Fig.19 The dotted distribution in the left part is the distribution of screw dislocations. Fig.19 The right part is a dislocation diffraction image in the reflection mode obtained by the dislocation detection system provided in the embodiment of the present application. Fig.19 The dotted distribution on the right is also the distribution of screw dislocations. Fig.19 As shown, the distribution positions and quantities of the screw dislocations detected by the two methods correspond to each other. Therefore, the dislocation detection system provided in the embodiment of the present application can not only realize non-destructive detection of dislocations in silicon carbide single wafers, but also obtain accurate dislocation detection results.

[0119] It can be seen that the present application can realize non-destructive detection of dislocations of the single wafer to be detected, and on the basis of ensuring the accuracy of the dislocation detection results of the single wafer to be detected, it can significantly save material costs and avoid wafer waste. In addition, compared with the prior art that extracts one or two pieces from each column of semiconductor single wafers for detection to represent the dislocation detection results of the entire column of semiconductor single wafers, the present application can realize the dislocation detection of the entire column of semiconductor single wafers, thereby improving the accuracy of the dislocation detection results of the entire column of semiconductor single wafers.

[0120] In addition, taking the semiconductor single wafer as a silicon carbide single wafer as an example, the molten potassium hydroxide used in the prior art etches the silicon carbide single wafer, but as the etching process progresses, the purity of the molten potassium hydroxide will change, that is, it is impossible to ensure that the same purity of potassium hydroxide is used to etch the silicon carbide single wafer; at the same time, the etching conditions such as etching temperature and etching time of different manufacturers are also difficult to unify, and it is impossible to form a unified standard, which easily leads to deviations in the final dislocation detection results of the silicon carbide single wafer. However, the semiconductor single wafer dislocation nondestructive detection system provided by this application can be uniformly set, which can further improve the accuracy and effectiveness of the dislocation detection results.

[0121] The above are some specific implementations of the semiconductor single wafer dislocation nondestructive detection system provided by the embodiment of the present application. Based on this, the present application also provides a corresponding method. The semiconductor single wafer dislocation nondestructive detection method provided by the embodiment of the present application will be described in detail below.

[0122] See also Fig. 20 , which is a flow chart of a semiconductor single wafer dislocation nondestructive detection method provided by an embodiment of the present application, combined with Fig. 20As shown, the method is applied to a semiconductor single wafer dislocation nondestructive detection system, the system includes: a wafer stage, a light diffractometer and a dislocation diffraction image analysis module, the light diffractometer includes a detection light emitting device and a detection light receiving device, and specifically may include:

[0123] S2001: The detection light emitting device emits a first detection light to the single wafer to be detected; the wafer to be detected is placed on the wafer stage.

[0124] S2002: A detection light receiving device receives a second detection light formed by diffraction of the first detection light through a target crystal plane of the single wafer to be detected.

[0125] S2003: The detection light receiving device generates a dislocation diffraction image of the target crystal plane diffraction of the single crystal wafer to be detected based on the intensity of the second detection light.

[0126] S2004: The dislocation diffraction image analysis module analyzes the dislocation diffraction image to obtain the dislocation detection result of the single wafer to be detected.

[0127] It should be noted that the specific implementation methods of S2001-S2004 can refer to some specific implementation methods of the above-mentioned semiconductor single wafer dislocation non-destructive detection system, which will not be repeated here.

[0128] The embodiments of the present application also provide corresponding semiconductor single wafer dislocation nondestructive detection equipment and computer-readable storage media for implementing the solutions provided in the embodiments of the present application.

[0129] The device includes a memory and a processor, the memory is used to store a computer program, and the processor is used to execute the computer program, so that the device executes the semiconductor single wafer dislocation non-destructive detection method described in any embodiment of the present application.

[0130] The computer-readable storage medium stores a computer program. When the computer program is executed, a device executing the computer program implements the semiconductor single wafer dislocation nondestructive detection method described in any embodiment of the present application.

[0131] The "first" and "second" in the names such as "first" and "second" (if any) mentioned in the embodiments of the present application are only used as name identifiers and do not represent the first or second in order.

[0132] Through the description of the above implementation methods, it can be known that those skilled in the art can clearly understand that all or part of the steps in the above-mentioned embodiment method can be implemented by means of software plus a general hardware platform. Based on such an understanding, the technical solution of the present application can be embodied in the form of a software product, which can be stored in a readable storage medium, such as a read-only memory (ROM) / RAM, a disk, an optical disk, etc., including a number of instructions for a computer device (which can be a personal computer, a server, or a network communication device such as a router) to execute the methods described in each embodiment of the present application or some parts of the embodiments.

[0133] It should be noted that the various embodiments in this specification are described in a progressive manner, and the same and similar parts between the various embodiments can refer to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the method embodiment, since it is basically similar to the system embodiment, the description is relatively simple, and the relevant parts can refer to the partial description of the system embodiment. The system embodiment described above is only schematic, in which the units described as separate components may or may not be physically separated, and the components indicated as units may or may not be physical units, that is, they may be located in one place, or they may be distributed on multiple network units. Some or all of the modules can be selected according to actual needs to achieve the purpose of the scheme of this embodiment. Ordinary technicians in this field can understand and implement it without paying creative work.

[0134] The above is only a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed in the present application should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A semiconductor single wafer dislocation nondestructive detection system, characterized in that: The system comprises: a wafer stage, a light diffractometer and a dislocation diffraction image analysis module; the light diffractometer comprises a detection light emitting device and a detection light receiving device; The wafer stage is used to place a single wafer to be tested; The detection light emitting device is used to emit a first detection light to the single wafer to be detected; The detection light receiving device is used to receive the second detection light formed by the first detection light diffracting through the target crystal plane of the single wafer to be detected; based on the intensity of the second detection light, generate a dislocation diffraction image of the target crystal plane of the single wafer to be detected; The dislocation diffraction image analysis module is used to analyze the dislocation diffraction image to obtain the dislocation detection result of the single wafer to be detected.

2. The system according to claim 1, characterized in that The target crystal plane includes a first type of crystal plane, the first type of crystal plane is a crystal plane whose included angle with the actual surface of the single crystal wafer to be detected is less than a preset angle, and the detection light emitting device is specifically used for: emitting a first detection light beam toward the first type of crystal plane of the single crystal wafer to be detected; The detection light receiving device is specifically used for: Receive a second detection light beam formed by diffracting the first detection light beam through the first type of crystal plane of the single crystal wafer to be detected; and generate a dislocation diffraction image in which the dislocation Burgers vector is perpendicular to the first type of crystal plane based on the intensity of the second detection light beam.

3. The system according to claim 2, characterized in that The target crystal plane includes a second type of crystal plane, and the second type of crystal plane is a crystal plane perpendicular to the first type of crystal plane. The detection light emitting device is specifically used for: emitting a first detection light beam toward the second type of crystal plane of the single crystal wafer to be detected; The detection light receiving device is specifically used for: A second detection light beam is received when the first detection light beam penetrates the single crystal wafer to be detected and is diffracted by the second type of crystal plane; and a dislocation diffraction image in which the dislocation Burgers vector is perpendicular to the second type of crystal plane is generated based on the intensity of the second detection light beam.

4. The system according to claim 1, characterized in that The wafer stage is also used for: The single wafer to be inspected is moved based on scanning a preset path of the detection light.

5. The system according to claim 4, characterized in that The preset detection light scanning path includes at least one of a matrix pattern path, a local rectangular path, a cross path or a cross path.

6. The system according to claim 1, characterized in that The dislocation diffraction image analysis module is specifically used for: Based on the shape features corresponding to the target dislocation type in the dislocation diffraction image of the single wafer to be inspected, the dislocation distribution of the dislocations belonging to the target dislocation type in the single wafer to be inspected is determined.

7. The system according to claim 1, characterized in that The dislocation diffraction image analysis module is specifically used for: Based on the shape features corresponding to the target dislocation type in the dislocation diffraction image of the single wafer to be detected and the surface area of ​​the actual surface of the single wafer to be detected, the dislocation density distribution of dislocations belonging to the target dislocation type in the single wafer to be detected is determined.

8. The system according to claim 7, characterized in that The dislocation diffraction image analysis module is also used for: Based on the dislocation density distribution of dislocations belonging to the target dislocation type in the single wafer to be inspected, a dislocation density distribution map corresponding to the dislocations belonging to the target dislocation type is generated.

9. The system according to claims 1-8, characterized in that: The first detection light includes a first X-ray; the second detection light includes a second X-ray.

10. A method for nondestructive detection of semiconductor single wafer dislocations, characterized in that: The invention is applied to a semiconductor single wafer dislocation nondestructive detection system, the system comprising: a wafer stage, a light diffractometer and a dislocation diffraction image analysis module, the light diffractometer comprising a detection light emitting device and a detection light receiving device, and the method comprising: The detection light emitting device emits a first detection light to the single wafer to be detected; the wafer to be detected is placed on the wafer stage; The detection light receiving device receives a second detection light formed by diffracting the first detection light through the target crystal plane of the single wafer to be detected; The detection light receiving device generates a dislocation diffraction image of a target crystal plane of the single wafer to be detected based on the intensity of the second detection light; The dislocation diffraction image analysis module analyzes the dislocation diffraction image to obtain a dislocation detection result of the single wafer to be detected.

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