Photoresist composition as well as preparation method and application thereof

Abstract

The invention provides a photoresist composition as well as a preparation method and application thereof. The photoresist composition comprises the following components: (a) a multifunctional monomer, (b) a resin polymer, (c) an auxiliary agent, (d) a photoinitiator and (e) a solvent, wherein (b) the multifunctional polymeric functional group monomer comprises at least one of compounds A1 to A6. The photoresist composition with excellent performance is prepared by designing the specific composition of the photoresist composition and further using at least one multifunctional monomer with a specific structure, and the photoresist composition is suitable for integrated circuit packaging.

Description

Technical Field

[0001] The invention belongs to the technical field of packaging materials, and specifically relates to a photoresist composition and a preparation method and application thereof. Background Art

[0002] Integrated circuit packaging refers to the entire process of assembling qualified chips, components, etc. onto a carrier, using appropriate connection technology to form electrical connections, installing a housing, and forming an effective component. Packaging mainly plays the role of placing, fixing, sealing, protecting chips, and ensuring circuit performance and thermal performance. Advanced packaging technology can provide chips with higher integration, smaller size, higher performance and lower energy consumption by adopting more compact and advanced design and process technology. By stacking multiple chips, space requirements are reduced while significantly improving integration and performance. In terms of performance and energy consumption, advanced packaging can greatly increase signal transmission speed and reduce power consumption by optimizing design and process. In terms of process technology, advanced packaging uses innovative technologies such as miniaturized solder balls and ultra-low k materials to significantly improve the electrical performance and heat dissipation performance of packaging. In the future, the spacing of various types of packaging will be further reduced, the Bump I / 0 spacing will be reduced to between 50-40μm, and the line width spacing of the heavy layer will be reduced to 2μm. The era of high-density packaging is approaching.

[0003] This puts higher demands on materials in the packaging field, especially on packaging etchants: (1) The resist forms a thin film with uniform thickness; (2) The resist forms a pattern as a template with almost vertical side walls, and the pattern has high fidelity to the aperture size of the mask; (3) High sensitivity and good developability, which improves production efficiency; (4) The resist has good wettability with the plating solution; (5) The resist does not dissolve in the plating solution during the electroplating process and does not cause the plating solution to deteriorate; (6) The resist has high adhesion to the substrate to prevent the plating solution from leaking between the substrate and the resist; (7) After electroplating, the resist can be easily released with a release solution; (8) The etchant has high etching ability, especially high anti-etching performance for O2.

[0004] However, the resist provided by the prior art cannot fully meet the above requirements, especially cannot meet the O2 anti-etching performance. Therefore, how to provide a resist that can meet the above requirements, especially having good O2 anti-etching performance, has become a technical problem that needs to be solved urgently. Summary of the invention

[0005] In view of the shortcomings of the prior art, the purpose of the present invention is to provide a photoresist composition and a preparation method and application thereof. The present invention designs the specific composition of the photoresist composition and further uses at least one multifunctional monomer with a specific structure to prepare a photoresist composition with excellent performance, which is suitable for integrated circuit packaging.

[0006] To achieve this object, the present invention adopts the following technical solutions:

[0007] In a first aspect, the present invention provides a photoresist composition, comprising the following components:

[0008] (a) Multifunctional monomers;

[0009] The multifunctional monomer includes at least one of Compound A1 to Compound A6:

[0010]

[0011]

[0012] Wherein, in Compound A1-Compound A6, a, b, c, d, e, f, g, h, i, j, k, l, m, n, o, p, q, and r are each independently 1, 2, 3, or 4;

[0013] R1, R2, R3, R4, R5, and R6 are each independently selected from any one of the following groups, and the dotted line indicates the substitution site:

[0014]

[0015] Among them, in R1 and R2, n1-n13 in the above groups is 2;

[0016] In R3 and R4, n1-n13 in the above groups is 3;

[0017] In R5 and R6, n1-n13 is 4 in the above groups.

[0018] The present invention designs the specific composition of the photoresist composition and further uses at least one multifunctional monomer with a specific structure to prepare a photoresist composition with excellent performance, which is suitable for integrated circuit packaging.

[0019] In the present invention, in R1 and R2, n1-n13 in the above groups is 2, indicating that R1 and R2 are disubstituted groups, and there is no specific restriction on the substitution site; similarly, in R3 and R4, n1-n13 in the above groups is 3, indicating that R3 and R4 are trisubstituted groups, and there is no specific restriction on the substitution site; in R5 and R6, n1-n13 in the above groups is 4, indicating that R5 and R6 are tetrasubstituted groups, and there is no specific restriction on the substitution site.

[0020] In the present invention, there is no special limitation on the preparation methods of Compound A1 to Compound A6, and the commonly used preparation methods in the art are applicable, for example:

[0021] The preparation method of compound A1, compound A3 and compound A5 comprises the following steps:

[0022]

[0023] Among them, x1 represents 2, 3 or 4, y1 represents 1, 2, 3 or 4;

[0024] R has the same definition as R1, R3 or R5;

[0025] The above preparation method comprises the following steps:

[0026] (1) Compound a and at least one compound b are mixed, and a NaOH aqueous solution is added thereto, and the mixture is refluxed and stirred for 18-30 h (for example, 18 h, 20 h, 22 h, 24 h, 26 h, 28 h or 30 h, etc.), and after the reaction is completed, the mixture is cooled to room temperature, HCl is added for neutralization, and then extracted with ethyl acetate to obtain a supernatant, and the supernatant is washed with water, and then rotary evaporated to obtain an intermediate product c;

[0027] Wherein, the molar ratio of compound a to compound b is 1:(5-10), for example, it can be 1:5, 1:6, 1:7, 1:8, 1:9 or 1:10, etc.;

[0028] (2) Mixing the intermediate product c and the reaction solvent 1 to obtain a solution 1; mixing the compound d, triethylamine and the reaction solvent 2 to obtain a solution 2; slowly dripping the solution 2 into the solution 1 at 0°C for a dripping time of 20-40 min (for example, 20 min, 22 min, 25 min, 27 min, 30 min, 33 min, 36 min, 38 min or 40 min, etc.); during the dripping, heating to 20-30°C (for example, 20°C, 22°C, 24°C, 26°C, 28°C or 30°C, etc.); reacting for 5-8 h (for example, 5 h, 6 h, 7 h, or 8 h, etc.); removing the excess reaction solvent 1 and reaction solvent 2 by distillation under reduced pressure; and performing column chromatography separation and purification, using a mixture of ethyl acetate and petroleum ether as the eluent (the volume ratio of ethyl acetate to petroleum ether is 1:2); after the column chromatography is completed, performing distillation under reduced pressure to obtain the multifunctional monomer;

[0029] Wherein, the molar ratio of the intermediate product c to the compound d is 1:(5-10), for example, it can be 1:5, 1:6, 1:7, 1:8, 1:9 or 1:10, etc.;

[0030] Reaction solvent 1 and reaction solvent 2 each independently include anhydrous acetone.

[0031] It should be noted that if the multifunctional monomer is compound A1, R has the same definition as R1, x represents 2, y represents 1, 2, 3 or 4 (having the same definition as a or b); similarly, if the multifunctional monomer is compound A3, R has the same definition as R3, x represents 3, y represents 1, 2, 3 or 4 (having the same definition as e, f or g); if the multifunctional monomer is compound A5, R has the same definition as R5, x represents 4, y represents 1, 2, 3 or 4 (having the same definition as k, l, m, n).

[0032] The preparation method of compound A2, compound A4 and compound A6 comprises the following steps:

[0033]

[0034] Wherein, y2 represents 2, 3 or 4, and in the repeating unit y2, each x2 independently represents 1, 2, 3 or 4;

[0035] R′ has the same definition as R2, R4 or R6;

[0036] The above preparation method comprises the following steps:

[0037] Compound e and reaction solvent 3 are mixed to obtain solution 3; compound d, triethylamine and reaction solvent 2 are mixed to obtain solution 2; solution 2 is slowly added dropwise to solution 3 at 0°C for 20-40 min (e.g., 20 min, 22 min, 25 min, 27 min, 30 min, 33 min, 36 min, 38 min or 40 min, etc.); during the addition, the temperature is raised to 20-30°C (e.g., 20°C, 22°C, 24°C, 26°C, 28°C or 30°C, etc.); after reacting for 5-8 h (e.g., 5 h, 6 h, 7 h, or 8 h, etc.), excess reaction solvent 3 and reaction solvent 2 are removed by vacuum distillation, and then column chromatography is performed for separation and purification, wherein the eluent is a mixture of ethyl acetate and petroleum ether (the volume ratio of ethyl acetate to petroleum ether is 1:2); after the column chromatography is completed, vacuum distillation is performed to obtain a multifunctional monomer;

[0038] Wherein, the molar ratio of compound e to compound d is 1:(5-10), for example, it can be 1:5, 1:6, 1:7, 1:8, 1:9 or 1:10, etc.;

[0039] Reaction solvent 3 and reaction solvent 2 each independently include anhydrous acetone.

[0040] It should be noted that, if the multifunctional monomer is compound A2, R has the same definition as R2, y2 represents 2, x2 represents 1, 2, 3 or 4 (having the same definition as c or d); similarly, if the multifunctional monomer is compound A4, R has the same definition as R4, y2 represents 3, x2 represents 1, 2, 3 or 4 (having the same definition as h, i or j); if the multifunctional monomer is compound A6, R has the same definition as R6, y2 represents 4, x2 represents 1, 2, 3 or 4 (having the same definition as o, p, q, r).

[0041] The following are preferred technical solutions of the present invention, but are not intended to limit the technical solutions provided by the present invention. Through the following preferred technical solutions, the objectives and beneficial effects of the present invention can be better achieved and realized.

[0042] As a preferred technical solution of the present invention, in Compound A1-Compound A2, a, b, c, d.

[0043] Preferably, R1 and R2 are each independently selected from Dashed lines indicate ligation sites.

[0044] Preferably, the R1 is selected from Dashed lines indicate ligation sites.

[0045] Preferably, said R2 is selected from Dashed lines indicate ligation sites.

[0046] Preferably, in Compound A3-Compound A4, e, f, g are 1, and h, i, j are 3.

[0047] Preferably, R3 and R4 are each independently selected from Dashed lines indicate ligation sites.

[0048] Preferably, said R3 is selected from Dashed lines indicate ligation sites.

[0049] Preferably, said R4 is selected from Dashed lines indicate ligation sites.

[0050] Preferably, in compounds A5-A6, k, l, m, and n are 1, and o, p, q, and r are 2.

[0051] Preferably, R5 and R6 are each independently selected from Dashed lines indicate ligation sites.

[0052] Preferably, said R5 is selected from Dashed lines indicate ligation sites.

[0053] Preferably, said R6 is selected from Dashed lines indicate ligation sites.

[0054] As a preferred technical solution of the present invention, the photoresist composition includes at least two multifunctional monomers, preferably two.

[0055] Preferably, the photoresist composition comprises a combination of compound A2 and compound A4, or a combination of compound A3 and compound A5, or a combination of compound A4 and compound A6.

[0056] In the present invention, the comprehensive performance of the photoresist composition is further improved by using at least two multifunctional monomers with different structures.

[0057] As a preferred technical solution of the present invention, based on the mass percentage of the photoresist composition as 100%, the mass percentage of the multifunctional monomer is 15-25%, for example, it can be 15%, 16%, 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24% or 25%, etc.

[0058] In the present invention, by controlling the content of the multifunctional monomer in the photoresist composition within a specific range, a photoresist composition with excellent performance can be prepared. If the content of the multifunctional monomer in the photoresist composition is too little or too much, the subsequent photolithography pattern morphology of the photoresist will be irregular, which cannot meet the requirements.

[0059] As a preferred technical solution of the present invention, the photoresist composition further comprises component (b) a resin polymer.

[0060] Preferably, the resin polymer is an acrylic resin.

[0061] Preferably, the weight average molecular weight of the resin polymer is 1000-30000 (for example, it may be 1000, 2000, 4000, 6000, 8000, 10000, 12000, 15000, 16000, 18000, 20000, 23000, 25000, 27000 or 30000, etc.), and more preferably 8000-16000.

[0062] Preferably, based on the mass percentage of the photoresist composition as 100%, the mass percentage of the resin polymer is 25-45%, for example, it may be 26%, 26%, 28%, 30%, 32%, 34%, 36%, 38%, 40%, 42%, 44% or 45%, etc.

[0063] It should be noted that the present invention has no special restrictions on the specific selection of acrylic resins, and all commonly used acrylic resins in the art are applicable, including but not limited to: the acrylic resin includes at least one of the following repeating units:

[0064]

[0065] Among them, m1, m2, m3, and m4 respectively represent the degree of polymerization of the above structure. The present invention has no special restrictions on the values ​​of m1, m2, m3, and m4, and illustratively includes but is not limited to: m1, m2, m3, and m4 are all selected from integers greater than 0, and m1÷(m1+m2+m3+m4)+m2÷(m1+m2+m3+m4)+m3÷(m1+m2+m3+m4)+m4÷(m1+m2+m3+m4)=1.

[0066] As a preferred technical solution of the present invention, the photoresist composition further comprises component (c) an auxiliary agent.

[0067] In the present invention, the auxiliary agent helps to improve the flatness of the film prepared from the photoresist composition, the adhesion between the photoresist compound and the substrate, and reduce the residual film after development.

[0068] Preferably, the auxiliary agent includes a leveling agent.

[0069] Preferably, the surfactant includes a fluorine-containing leveling agent and / or a leveling agent containing a polyethylene glycol structure.

[0070] Preferably, based on the mass percentage of the photoresist composition as 100%, the mass percentage of the auxiliary agent is 0.01-0.5%, for example, it can be 0.01%, 0.02%, 0.04%, 0.06%, 0.08%, 0.1%, 0.15%, 0.2%, 0.25%, 0.3%, 0.35%, 0.4%, 0.45% or 0.5%, etc.

[0071] It should be noted that the present invention does not have any special restrictions on the specific selection of fluorine-containing leveling agents or leveling agents containing polyethylene glycol structures. The fluorine-containing leveling agents or leveling agents containing polyethylene glycol structures commonly used in the art are applicable, including but not limited to FTX-218 (purchased from Neos Corporation).

[0072] As a preferred technical solution of the present invention, the photoresist composition further comprises component (d) an initiator.

[0073] Preferably, the initiator comprises a photoinitiator.

[0074] Preferably, based on 100% by mass of the photoresist composition, the mass percentage of the initiator is 7-15%, for example, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14% or 15%.

[0075] It should be noted that in the present invention, there is no special restriction on the specific selection of the photoinitiator, and any photoinitiator commonly used in the art is applicable, including but not limited to: photoinitiator TPO (diphenyl-(2,4,6-trimethylbenzoyl)phosphine oxide, )、Photoinitiator 907 (2-methyl-1-[4-(methylthio)phenyl]-2-(4-morpholinyl)-1-propanone,)、Photoinitiator 819 (phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide), BDK (benzodimethyl ether ) or hexaphenylimidazole.

[0076] As a preferred technical solution of the present invention, the photoresist composition further comprises component (e) a solvent.

[0077] It should be noted that in the present invention, there is no special restriction on the specific selection of solvents, and commonly used solvents in the art are applicable, including but not limited to: ether organic solvents, ester organic solvents, ketone organic solvents or hydroxyl-containing organic solvents, such as: propylene glycol methyl ether acetate (PGMEA), cyclopentanone, cyclohexanone, ethyl lactate, butyl acetate, 2-ethoxyethanol, ethyl 3-ethoxypropionate, etc.

[0078] In the present invention, the photoresist composition comprises the following components in percentage by weight:

[0079]

[0080]

[0081] As a preferred technical solution of the present invention, the solid content of the photoresist composition is 55-70%, for example, it can be 55%, 56%, 57%, 58%, 59%, 60%, 61%, 62%, 63%, 64%, 65%, 66%, 67%, 68%, 69% or 70%, etc.

[0082] In the present invention, solid content = (mass of all components except the solvent) / mass of all components of the photoresist composition.

[0083] In a second aspect, the present invention provides a method for preparing the photoresist composition according to the first aspect, the preparation method comprising the following steps:

[0084] The components of the photoresist composition are mixed to obtain the photoresist composition.

[0085] In a third aspect, the present invention provides a use of the photoresist composition as described in the second aspect, wherein the photoresist composition is used for integrated circuit packaging.

[0086] Compared with the prior art, the present invention has the following beneficial effects:

[0087] The present invention designs the specific composition of the photoresist composition and further uses at least one multifunctional monomer with a specific structure to prepare a photoresist composition with excellent performance, which is suitable for integrated circuit packaging. DETAILED DESCRIPTION

[0088] For the convenience of understanding the present invention, the present invention lists the following embodiments. It should be understood by those skilled in the art that the embodiments are only to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0089] Preparation Example 1

[0090] This preparation example provides a structure and synthesis method of a resin polymer. The resin polymer involved in the present invention is an acrylic resin, and the acrylic resin includes the following repeating units:

[0091]

[0092] The resin polymer synthesis method is as follows:

[0093] Take 12.95g of compound A 26.81g Compound B 31.33g Compound C 28.92g Compound D Add to a 500mL three-necked flask under nitrogen environment, then add 200.00g PGMEA (propylene glycol methyl ether acetate) to dissolve, and introduce nitrogen bubbling for deoxygenation for half an hour under stirring, and heat to 80°C; weigh 2.20g dimethyl azobisisobutyrate (AIBME) and dissolve it in 30g acetonitrile, then slowly drop the AIBME / acetonitrile solution into the three-necked flask solution, the dropping time is 30min, reflux reaction for 8h after the dropwise addition is completed, stop the reaction, and reduce to room temperature;

[0094] The reaction solution was slowly added dropwise into 3L of n-heptane with stirring. After the addition was completed, the mixture was stirred for 2 hours and vacuum filtered. After the filtration was completed, the solid was rinsed three times with n-heptane and then vacuum dried in an oven at 50°C for 48 hours to obtain the resin polymer.

[0095] The molecular weight and distribution of the synthesized polymer resin were characterized by gel chromatography (Shimadzu GPC-20A), and the results were as follows: Mw = 12500, PDI = 2.5.

[0096] The preparation method of compound A11 is as follows:

[0097]

[0098] (1) Compound a1 (11.0 g) and compound b1 (40.0 g) were weighed and added to 200.00 g of a 5% aqueous NaOH solution, and the mixture was stirred under reflux for 24 h. After the reaction was completed, the mixture was cooled to room temperature, neutralized by adding 5% HCl, and extracted with ethyl acetate to obtain a supernatant. The supernatant was washed with water and then rotary evaporated to obtain 12.7 g of an intermediate product c1, which had a purity of 98.5% as measured by HPLC (Agilent);

[0099] (2) Weigh the intermediate product c1 (9.0 g) and dissolve it in 60 mL of anhydrous acetone to obtain solution 1; weigh the compound d1 (9.9 g) and 10.1 g of triethylamine and dissolve them in 500 mL of anhydrous acetone to obtain solution 2; slowly add solution 2 to solution 1 at 0°C for 30 min. During the addition, heat the temperature to 25°C and react for 6 h. After removing excess anhydrous acetone by vacuum distillation, separate and purify by column chromatography. The eluent is a mixture of ethyl acetate and petroleum ether (the volume ratio of ethyl acetate to petroleum ether is 1:2). After the column chromatography, vacuum distillation is performed to obtain 15.8 g of compound A11. The purity of the compound A11 is 98.0% as measured by HPLC (Agilent).

[0100] Compound A13 and Compound A15 were prepared by referring to the preparation method of Compound A11.

[0101] The preparation method of compound A2 is as follows:

[0102]

[0103] Compound e1 and anhydrous acetone were mixed to obtain solution 3; Compound d1, triethylamine and anhydrous acetone were mixed to obtain solution 2; Solution 2 was slowly added dropwise to solution 3 at 0°C for 30 minutes. During the addition, the temperature was raised to 25°C. After reacting for 6 hours, excess anhydrous acetone was removed by vacuum distillation, and then column chromatography was performed for separation and purification. The eluent was a mixture of ethyl acetate and petroleum ether (the volume ratio of ethyl acetate to petroleum ether was 1:2). After the column chromatography was completed, vacuum distillation was performed to obtain compound A12;

[0104] Compound A13 and Compound A15 were prepared by referring to the preparation method of Compound A11.

[0105] It should be noted that the raw materials of the above-mentioned Compound A11-Compound A16 (such as Compound a1, Compound a2, Compound d1, Compound e1, etc.) were all purchased from Aladdin Reagent Network.

[0106] The components used in the following examples and comparative examples are shown in Table 1 below:

[0107] Table 1

[0108]

[0109]

[0110]

[0111] Example 1-Example 24, Comparative Example 1-Comparative Example 3

[0112] Example 1 to Example 24 and Comparative Example 1 to Comparative Example 3 respectively provide a photoresist composition, and the specific composition of the photoresist composition is shown in Table 2 to Table 4 below. The amount of each component in Table 2 to Table 4 is mass percentage.

[0113] The preparation method of the above-mentioned photoresist composition is as follows:

[0114] The components of the photoresist composition are mixed to obtain the photoresist composition.

[0115] Table 2

[0116]

[0117]

[0118] Table 3

[0119]

[0120]

[0121] Table 4

[0122]

[0123] The lithographic properties of the photoresist compositions provided in the above embodiments and comparative examples were tested, and the specific testing method is as follows:

[0124] The photoresist compositions provided in the above embodiments and comparative examples were respectively coated on an 8-inch copper-plated silicon wafer with a film thickness of 20 μm, dried at 110° C. for 300 s to form a film, the solvent was removed, and the film was exposed using a Nikon I9 exposure machine (exposure wavelength of 365 nm), and developed in a TMAH (tetramethylammonium hydroxide) developer having a mass concentration of 2.38% to obtain L / S=20 μm / 20 μm; the obtained samples were etched with O2 for 30 s, 60 s, and 90 s, respectively;

[0125] Evaluation criteria: Under O2 conditions, if the CD change value within 90s of etching time is less than 0.5μm, it is considered to meet the requirements; under O2 conditions, if the CD change value within 90s of etching time is greater than 0.5μm, it cannot meet the requirements;

[0126] Morphology: After etching, if the morphology does not change, it is considered OK; if the morphology changes, it is considered not OK;

[0127] Specific evaluation criteria: after etching, if morphology a appears, it is considered OK; if morphology b or c appears, it is considered OK:

[0128]

[0129] The above performance test results are shown in Table 5 below:

[0130] Table 5

[0131]

[0132]

[0133] From the above content, it can be seen that the present invention designs the specific composition of the photoresist composition and further uses at least one multifunctional monomer with a specific structure to prepare a photoresist composition with excellent performance. The photoresist composition has high etching resistance to O2, and the CD change in 90s is ≤0.50μm. After etching for 90s, its morphology does not change, and it is suitable for integrated circuit packaging.

[0134] It can be seen from the contents of Examples 13-14 that the present invention further optimizes the comprehensive performance of the photoresist composition by using three or more multifunctional monomers with specific structures. Although it has higher etching resistance to O2, the CD change in 90s is ≤0.50μm, and good graphic morphology and good etching performance are obtained, but in subsequent studies it was found that other properties (such as degumming performance) are poor and do not meet the use requirements. Therefore, the photoresist composition can preferentially use a mixture of two multifunctional monomers.

[0135] It can be seen from the contents of Examples 15-20 that the present invention further optimizes the comprehensive performance of the photoresist composition by using a single multifunctional monomer with a specific structure. Although it has higher etching resistance to O2 and a CD change of ≤0.50μm in 90s, it has good etching resistance. However, subsequent studies found that its etching resistance to electroplating solution is slightly poor.

[0136] It can be seen from the contents of Examples 21 and 22 that the amount of the multifunctional monomer in the photoresist composition is at the endpoint value required for protection by the present invention, and a photoresist composition with excellent performance is prepared by using two multifunctional monomers with specific structures.

[0137] It can be seen from the contents of Examples 23 and 24 that the present invention further optimizes the comprehensive performance of the photoresist composition by using two multifunctional monomers with specific structures, and the photoresist composition has higher etching resistance to O2. However, since the amount of multifunctional monomer added is not within the preferred range required to be protected by the present invention, Example 23 has insufficient amount of multifunctional monomer, resulting in decreased electroplating resistance in other subsequent applications, and Example 24 has excessive amount of multifunctional monomer, resulting in decreased degumming performance and inability to completely degumming.

[0138] It can be seen from Examples 1-24 and Comparative Examples 1-3 that the present invention prepares a photoresist composition that meets the requirements by designing the structure of the multifunctional monomer.

[0139] In summary, the present invention designs the specific composition of the photoresist composition and further uses at least one multifunctional monomer with a specific structure to prepare a photoresist composition with excellent performance, which is suitable for integrated circuit packaging.

[0140] The applicant declares that the present invention illustrates the detailed process flow of the present invention through the above-mentioned embodiments, but the present invention is not limited to the above-mentioned detailed process flow, that is, it does not mean that the present invention must rely on the above-mentioned detailed process flow to be implemented. Those skilled in the art should understand that any improvement of the present invention, equivalent replacement of various raw materials of the product of the present invention, addition of auxiliary components, selection of specific methods, etc., all fall within the protection scope and disclosure scope of the present invention.

Claims

1. A photoresist composition, characterized in that: The photoresist composition comprises the following components: (a) a multifunctional monomer; the multifunctional monomer comprises at least one of Compound A1 to Compound A6: Wherein, in Compound A1-Compound A6, a, b, c, d, e, f, g, h, i, j, k, l, m, n, o, p, q, and r are each independently 1, 2, 3, or 4; R1, R2, R3, R4, R5, and R6 are each independently selected from any one of the following groups, and the dotted line indicates the substitution site: Among them, in R1 and R2, n1-n13 in the above groups is 2; In R3 and R4, n1-n13 in the above groups is 3; In R5 and R6, n1-n13 is 4 in the above groups.

2. The photoresist composition according to claim 1, characterized in that In compound A1-compound A2, a, b, c, and d are 1; Preferably, R1 and R2 are each independently selected from Dashed lines indicate junction sites; Preferably, the R1 is selected from Dashed lines indicate junction sites; Preferably, said R2 is selected from Dashed lines indicate junction sites; Preferably, in Compound A3-Compound A4, e, f, and g are 1, and h, i, and j are 3; Preferably, R3 and R4 are each independently selected from Dashed lines indicate junction sites; Preferably, said R3 is selected from Dashed lines indicate junction sites; Preferably, said R4 is selected from Dashed lines indicate junction sites; Preferably, in Compound A5-Compound A6, k, l, m, and n are 1, and o, p, q, and r are 2; Preferably, R5 and R6 are each independently selected from Dashed lines indicate junction sites; Preferably, said R5 is selected from Dashed lines indicate junction sites; Preferably, said R6 is selected from Dashed lines indicate ligation sites.

3. The photoresist composition according to claim 1 or 2, characterized in that: The photoresist composition comprises at least two multifunctional monomers, preferably two; Preferably, the photoresist composition comprises a combination of compound A2 and compound A4, or a combination of compound A3 and compound A5, or a combination of compound A4 and compound A6.

4. The photoresist composition according to any one of claims 1 to 3, characterized in that: Taking the mass percentage of the photoresist composition as 100%, the mass percentage of the multifunctional monomer is 15-25%.

5. The photoresist composition according to any one of claims 1 to 4, characterized in that: The photoresist composition further comprises component (b) a resin polymer; Preferably, the resin polymer is an acrylic resin; Preferably, the weight average molecular weight of the resin polymer is 1000-30000, more preferably 8000-16000; Preferably, based on 100% by mass of the photoresist composition, the mass percentage of the resin polymer is 25-45%.

6. The photoresist composition according to any one of claims 1 to 5, characterized in that: The photoresist composition further comprises component (c) an auxiliary agent; Preferably, the auxiliary agent includes a leveling agent; Preferably, the leveling agent includes a fluorine-containing leveling agent and / or a leveling agent containing a polyethylene glycol structure; Preferably, based on 100% by mass of the photoresist composition, the mass percentage of the auxiliary agent is 0.01-0.5%.

7. The photoresist composition according to any one of claims 1 to 6, characterized in that: The photoresist composition further comprises component (d) an initiator; Preferably, the initiator comprises a photoinitiator; Preferably, based on the mass percentage of the photoresist composition being 100%, the mass percentage of the initiator is 7-15%; Preferably, the photoresist composition further comprises component (e) a solvent.

8. The photoresist composition according to any one of claims 1 to 7, characterized in that: The solid content of the photoresist composition is 55-70%.

9. A method for preparing a photoresist composition according to any one of claims 1 to 8, characterized in that: The preparation method comprises the following steps: The components of the photoresist composition are mixed to obtain the photoresist composition.

10. Use of the photoresist composition according to any one of claims 1 to 8, characterized in that: The photoresist composition is used for integrated circuit packaging.

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