Semiconductor pasting method

Abstract

The invention discloses a method for pasting a semiconductor, which comprises the following steps of: heating the semiconductor, coating wax drops on the back surface of the semiconductor when the semiconductor is heated, stopping heating after coating, pasting the back surface of the semiconductor on a clamp, applying a force of 10-15kg to the front surface of the semiconductor during pasting, and pasting the back surface of the semiconductor on the clamp after the wax drops are coated on the back surface of the semiconductor. The method comprises the following steps of: forming a wax layer with the thickness of 0.1-1mm by wax drops on the back surface of a semiconductor, and dripping curing glue between the outer edge of the semiconductor and a clamp, so that the bonding between the semiconductor and the clamp is firmer, and the wax layer formed between the semiconductor and the clamp can play a role in shock absorption, thereby effectively reducing the internal stress of the semiconductor and prolonging the service life of the semiconductor. And the situation that the semiconductor is easy to break is avoided.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor processing, and in particular to a semiconductor pasting method. Background Art

[0002] With the rapid advancement of science and technology, the requirements for chip processing accuracy are getting higher and higher. In the process of semiconductor processing, there are usually traditional processes such as mechanical processing. Usually, photoresist is used to bond the semiconductor to the fixture for cutting and grinding. However, the texture of photoresist is very hard after curing, which makes the semiconductor easy to break during the processing process, coupled with factors such as the vibration of the grinding wheel. Summary of the invention

[0003] In view of the deficiencies in the prior art, an embodiment of the present invention provides a method for pasting a semiconductor, comprising:

[0004] Heating the semiconductor;

[0005] applying wax droplets on the back side of the semiconductor while the semiconductor is heated;

[0006] Stop heating the semiconductor, and stick the back side of the semiconductor to a fixture, wherein during sticking, a force of 10-15 kg is applied to the front side of the semiconductor, and the wax droplets on the back side of the semiconductor form a wax layer, and the thickness of the wax layer is 0.1-1 mm;

[0007] Curing glue is dripped between the outer edge of the semiconductor and the fixture.

[0008] As a preferred embodiment, the wax droplets include polyethylene wax.

[0009] As a preferred embodiment, the heating temperature when heating the semiconductor is 60-70°C.

[0010] As a preferred embodiment, the time for coating the wax droplets is less than or equal to 10 minutes.

[0011] As a preferred solution, the heating of the semiconductor specifically includes:

[0012] Place the semiconductor on a hot plate.

[0013] As a preferred solution, when the semiconductor is heated, applying wax droplets on the back side of the semiconductor specifically includes:

[0014] When the semiconductor is heated, wax droplets are sprayed onto the back of the semiconductor through a stainless steel tube carrying wax liquid, and the distance between two adjacent wax droplets is equal.

[0015] As a preferred solution, a stainless steel nozzle is provided at the first end of the stainless steel tube, and the second end of the stainless steel tube is connected to a compressed air pipeline;

[0016] In the process of spraying wax droplets, the compression force of the compressed air is 10.5-12.5atm, the supply rate is 0.4-0.55ml / s, the moving speed of the stainless steel nozzle is 3.0-3.5cm / s, the height between the stainless steel nozzle and the semiconductor is 1.0-1.2mm, the width of the wax droplets is 1.5-2.5mm, the length of the wax droplets is 2.5-3.0mm, and the distance between each two adjacent wax droplets is 0.01mm.

[0017] As a preferred solution, the curing glue is 502 glue.

[0018] As a preferred solution, a buffer layer is provided on the surface of the clamp.

[0019] As a preferred solution, the clamp further includes a plurality of protrusions, the protrusions are connected to the buffer layer, the protrusions are made of elastic material, the height of the protrusions is 0.05-0.9 mm, and the height of the protrusions is less than the thickness of the wax layer.

[0020] Compared with the prior art, the beneficial effect of the embodiments of the present invention is that: the embodiments of the present invention provide a method for pasting a semiconductor, by first heating the semiconductor, and then coating wax droplets on the back of the semiconductor while the semiconductor is heated, stopping heating after coating and pasting the back of the semiconductor on a fixture, wherein, during pasting, a force of 10-15kg is applied to the front of the semiconductor, and the wax droplets on the back of the semiconductor form a wax layer with a thickness of 0.1-1mm, and then curing glue is dripped between the outer edge of the semiconductor and the fixture, thereby making the bonding between the semiconductor and the fixture more secure, wherein the wax layer formed between the semiconductor and the fixture can play a shock-absorbing role, thereby effectively reducing the internal stress of the semiconductor, and thus avoiding the situation where the semiconductor is easily broken. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a schematic flow chart of a semiconductor pasting method in an embodiment of the present invention. DETAILED DESCRIPTION

[0022] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0023] See also Figure 1 , which is a flow chart of a semiconductor pasting method in an embodiment of the present invention.

[0024] The semiconductor pasting method according to the embodiment of the present invention comprises:

[0025] Step S101, heating the semiconductor;

[0026] Step S102, applying wax droplets on the back side of the semiconductor while the semiconductor is heated;

[0027] Step S103, stop heating the semiconductor, and stick the back side of the semiconductor on a fixture, wherein during sticking, a force of 10-15 kg is applied to the front side of the semiconductor, and the wax droplets on the back side of the semiconductor form a wax layer, and the thickness of the wax layer is 0.1-1 mm;

[0028] Step S104, dripping curing glue between the outer edge of the semiconductor and the clamp.

[0029] In an embodiment of the present invention, the semiconductor is first heated, and then wax droplets are coated on the back side of the semiconductor while the semiconductor is heated. After coating, heating is stopped and the back side of the semiconductor is pasted on a fixture. During pasting, a force of 10-15 kg is applied to the front side of the semiconductor, and the wax droplets on the back side of the semiconductor form a wax layer with a thickness of 0.1-1 mm. Then, curing glue is dripped between the outer edge of the semiconductor and the fixture, thereby making the bonding between the semiconductor and the fixture more secure. The wax layer formed between the semiconductor and the fixture can play a shock-absorbing role, thereby effectively reducing the internal stress of the semiconductor, thereby avoiding the situation where the semiconductor is easily broken.

[0030] In a specific implementation, after step S104, the semiconductor is fixed and can be ground. During the grinding process, the shock-absorbing effect of the wax is fully exerted to reduce the occurrence of internal stress in the semiconductor. Thus, compared with the prior art method of using photoresist to stick semiconductors, the embodiment of the present invention can reduce the deformation of the semiconductor caused by internal stress from 5 mm to 1-2 mm.

[0031] In an optional embodiment, the wax droplets include polyethylene wax. In a specific implementation, the wax droplets are mainly made of polyethylene wax. For example, the wax droplets can be made of a product of model WAX325MP, which has a melting point of 106°C, a softening point of 109°C, and a melt viscosity of 205.

[0032] In an optional embodiment, the heating temperature when heating the semiconductor is 60-70°C, for example, it can be 60°C, 61°C, 62°C, 63°C, 64°C, 65°C, 66°C, 67°C, 68°C, 69°C, 70°C, etc. Of course, the heating temperature when heating the semiconductor can also be set to other values ​​according to actual use requirements, which will not be further described here. It should be noted that 60-70°C meets the temperature range that the integrated circuit inside the semiconductor can withstand and will not cause damage to the semiconductor.

[0033] In an optional embodiment, the time for applying the wax droplets is less than or equal to 10 minutes. In a specific implementation, the chemical properties of the polyethylene wax may change when the polyethylene wax is heated at 60-70°C for more than 10 minutes. In this embodiment, since the semiconductor is always on the heating plate, the wax droplets will not solidify during the application of the wax droplets, and the wax droplets are applied within 10 minutes to avoid changes in the chemical properties of the polyethylene wax.

[0034] In an optional implementation, the step S101 of “heating the semiconductor” specifically includes:

[0035] Place the semiconductor on a hot plate.

[0036] This embodiment heats the semiconductor by placing the semiconductor on a heating plate, which can be heated evenly and is easy to operate. Of course, in the specific implementation, the semiconductor can also be heated in other ways, which will not be described in detail here.

[0037] In an optional embodiment, when the semiconductor is heated, applying wax droplets on the back side of the semiconductor specifically includes:

[0038] When the semiconductor is heated, wax droplets are sprayed onto the back of the semiconductor through a stainless steel tube carrying wax liquid, and the distance between two adjacent wax droplets is equal.

[0039] This embodiment evenly applies wax droplets on the semiconductor so that the formed wax layer has roughly the same shock-absorbing effect on various positions of the semiconductor, so that the semiconductor can be evenly stressed and the shock-absorbing effect of the wax layer can be fully exerted, which is beneficial to reducing the internal stress of the semiconductor.

[0040] In an optional embodiment, a stainless steel nozzle is provided at the first end of the stainless steel tube, and the second end of the stainless steel tube is connected to a compressed air pipeline;

[0041] In the process of spraying wax droplets, the compression force of the compressed air is 10.5-12.5atm, the supply rate is 0.4-0.55ml / s, the moving speed of the stainless steel nozzle is 3.0-3.5cm / s, the height between the stainless steel nozzle and the semiconductor is 1.0-1.2mm, the width of the wax droplets is 1.5-2.5mm, the length of the wax droplets is 2.5-3.0mm, and the distance between each two adjacent wax droplets is 0.01mm.

[0042] In an optional embodiment, the curing glue is 502 glue. Since the wax only acts as a shock absorber and has little bonding strength, 502 curing glue is dripped onto the outer edges of the fixture and the semiconductor to ensure a more secure bonding between the semiconductor and the fixture.

[0043] In an optional embodiment, a buffer layer is provided on the surface of the fixture. In this embodiment, by providing the buffer layer on the surface of the fixture, when the semiconductor is bonded to the fixture through the wax layer, the buffer layer and the wax layer can form a shock absorbing structure together, and then when the semiconductor is mechanically processed, the buffer layer and the wax layer work together to play a good shock absorbing role to avoid the semiconductor from being broken, thereby improving the product yield.

[0044] In an optional embodiment, the clamp further includes a plurality of protrusions, the protrusions are connected to the buffer layer, the protrusions are made of elastic material, the height of the protrusions is 0.05-0.9 mm, and the height of the protrusions is less than the thickness of the wax layer. By arranging a plurality of protrusions made of elastic material on the buffer layer of the clamp to form a triple shock-absorbing protection structure of wax layer + buffer layer + protrusions, a synergistic shock-absorbing effect is further achieved, thereby further avoiding the fragmentation of semiconductors and improving product yield.

[0045] For example, the material of the protrusion can be the same as the buffer layer, or different. For example, the material of the buffer layer and the protrusion can be elastic materials such as rubber and foam, and specifically can be TPV thermoplastic elastomer, PU foam, etc. Of course, the material of the protrusion and the buffer layer can also be other materials according to actual use requirements, which will not be described in detail here. In addition, in the specific implementation, the buffer layer can be formed on the surface of the fixture first, and then the protrusion can be formed on the surface of the buffer layer, or the buffer layer and the protrusion can be formed together.

[0046] Compared with the prior art, the beneficial effect of the embodiments of the present invention is that: the embodiments of the present invention provide a method for pasting a semiconductor, by first heating the semiconductor, and then coating wax droplets on the back of the semiconductor while the semiconductor is heated, stopping heating after coating and pasting the back of the semiconductor on a fixture, wherein, during pasting, a force of 10-15kg is applied to the front of the semiconductor, and the wax droplets on the back of the semiconductor form a wax layer with a thickness of 0.1-1mm, and then curing glue is dripped between the outer edge of the semiconductor and the fixture, thereby making the bonding between the semiconductor and the fixture more secure, wherein the wax layer formed between the semiconductor and the fixture can play a shock-absorbing role, thereby effectively reducing the internal stress of the semiconductor, and thus avoiding the situation where the semiconductor is easily broken.

[0047] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and substitutions can be made without departing from the technical principles of the present invention. These improvements and substitutions should also be regarded as the scope of protection of the present invention.

Claims

1. A method for pasting a semiconductor, characterized in that: include: Heating the semiconductor; applying wax droplets on the back side of the semiconductor while the semiconductor is heated; Stop heating the semiconductor, and stick the back side of the semiconductor to a fixture, wherein during sticking, a force of 10-15 kg is applied to the front side of the semiconductor, and the wax droplets on the back side of the semiconductor form a wax layer, and the thickness of the wax layer is 0.1-1 mm; Curing glue is dripped between the outer edge of the semiconductor and the fixture.

2. The semiconductor pasting method according to claim 1, characterized in that: The wax droplets include polyethylene wax.

3. The semiconductor pasting method according to claim 1, characterized in that: The heating temperature when heating the semiconductor is 60-70°C.

4. The semiconductor pasting method according to claim 3, characterized in that: The time for applying the wax droplets is less than or equal to 10 minutes.

5. The semiconductor pasting method according to claim 1, characterized in that: The heating of the semiconductor specifically comprises: Place the semiconductor on a hot plate.

6. The semiconductor pasting method according to claim 1, characterized in that: When the semiconductor is heated, applying wax droplets on the back side of the semiconductor specifically comprises: When the semiconductor is heated, wax droplets are sprayed onto the back of the semiconductor through a stainless steel tube carrying wax liquid, and the distance between two adjacent wax droplets is equal.

7. The semiconductor pasting method according to claim 6, characterized in that: The first end of the stainless steel tube is provided with a stainless steel nozzle, and the second end of the stainless steel tube is connected to a compressed air pipeline; In the process of spraying wax droplets, the compression force of the compressed air is 10.5-12.5atm, the supply rate is 0.4-0.55ml / s, the moving speed of the stainless steel nozzle is 3.0-3.5cm / s, the height between the stainless steel nozzle and the semiconductor is 1.0-1.2mm, the width of the wax droplets is 1.5-2.5mm, the length of the wax droplets is 2.5-3.0mm, and the distance between each two adjacent wax droplets is 0.01mm.

8. The semiconductor pasting method according to claim 1, wherein: The curing glue is 502 glue.

9. The method for pasting a semiconductor according to any one of claims 1 to 8, characterized in that: A buffer layer is provided on the surface of the clamp.

10. The semiconductor pasting method according to claim 9, characterized in that: The clamp further comprises a plurality of protrusions, wherein the protrusions are connected to the buffer layer, the protrusions are made of elastic material, the height of the protrusions is 0.05-0.9 mm, and the height of the protrusions is less than the thickness of the wax layer.

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