System, method and device for wafer drying control

Abstract

The present invention discloses a system, method and device for wafer drying control, wherein the system for wafer drying comprises: a dry wafer drying device, a mechanical arm, a wafer clamping arm, and a PLC, wherein the PLC is configured to control the clean air knife of the wafer drying device to open the air nozzle when it is determined that all semiconductor wafers clamped by the wafer clamping arm have entered the drying tunnel of the wafer drying device, so that the dry gas passes through the slit to dry the semiconductor wafers in the drying tunnel, and control the mechanical arm to lift the wafer clamping arm; and when it is determined that all semiconductor wafers have been lifted out of the drying tunnel, control the clean air knife to stop spraying. In this way, the drying of the wafer can be realized automatically, manual operation is reduced, and secondary pollution of the wafer is reduced, thereby improving the production efficiency of the wafer.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a system, method and device for wafer drying control. Background Art

[0002] With the development of science and technology, semiconductor products have received more and more attention, and the degree of automation in semiconductor product manufacturing has also become higher and higher. Semiconductor wafers refer to the substrate silicon wafers used in the production of silicon semiconductor integrated circuits. Because of their round shape, they are called wafers. In semiconductor manufacturing, wafer manufacturing is one of the core links, and its quality directly determines the performance and reliability of the final product.

[0003] In the production process of wafers, there is a process that requires wafers to be unloaded into a pure water environment for cleaning, and the cleaned wafers need to be dried before the subsequent manufacturing process can be carried out. Therefore, after the wafers are cleaned, rapid drying becomes an indispensable quality control method. At present, after taking the wafers out of the unloading water tank, they are generally left to dry naturally, or manually blown dry with a nitrogen gun. However, the long waiting time for drying results in low production efficiency, and it is easily affected by human factors, including: traces of touch residues on the wafers caused by manual operation and possible damage to the wafers, etc., which leads to instability and uncertainty in the drying effect of the wafers. Summary of the invention

[0004] In order to solve the above problems existing in the prior art, the present invention provides a system, method and device for wafer drying control. The technical problem to be solved by the present invention is achieved through the following technical solutions:

[0005] A first aspect of an embodiment of the present invention provides a system for wafer drying control, comprising: a wafer drying device, a robotic arm, a wafer clamping arm, and a PLC, wherein:

[0006] The wafer drying equipment includes: a drying tunnel for inserting a wafer clamping arm for clamping semiconductor wafers, and a clean air knife for spraying drying gas, and there are two opposite slits on the drying tunnel, and the clean air knives are symmetrically distributed on both sides of the slits;

[0007] The PLC is configured to, when it is determined that all the semiconductor wafers clamped by the wafer clamping arm have entered the drying tunnel, control the clean air knife to open the air nozzle so that the dry gas passes through the slit to dry the semiconductor wafers in the drying tunnel, and control the robot arm to lift the wafer clamping arm; and, when it is determined that all the semiconductor wafers have been lifted out of the drying tunnel, control the clean air knife to stop spraying.

[0008] A second aspect of an embodiment of the present invention provides a method for controlling wafer drying, comprising: when it is determined that all semiconductor wafers held by a wafer holding arm have entered a drying tunnel of a wafer drying device, controlling a clean air knife of the wafer drying device to open a gas nozzle so that dry gas passes through a slit to dry the semiconductor wafer in the drying tunnel, and controlling a mechanical arm to lift the wafer holding arm;

[0009] When it is confirmed that all semiconductor wafers are lifted out of the drying tunnel, the clean air knife is controlled to stop spraying.

[0010] A third aspect of an embodiment of the present invention provides a device for wafer drying control, comprising: the device includes a processor and a memory storing program instructions, characterized in that the processor is configured to execute the above-mentioned method for wafer drying control when executing the program instructions.

[0011] Beneficial effects of the present invention:

[0012] The wafer clamping arm is controlled by a mechanical arm, so that the wafer clamping arm clamps the semiconductor wafer and inserts it into the drying tunnel of the wafer drying equipment, and the clean air knife of the wafer drying equipment is controlled to open the air nozzle to spray dry gas. After the dry air flow beam is refracted, reflected, and mixed to form a positive pressure static pressure cavity in the wafer drying equipment, the positive pressure dry air flow can overflow into the drying tunnel through the slit on the drying tunnel to dry the wafer and the clamping arm in the drying tunnel. In this way, the drying of the wafer can be realized automatically, manual operation is reduced, and the secondary pollution of the wafer is reduced, thereby improving the production efficiency of the wafer.

[0013] Other features and advantages of the present invention will be described in the following description, and partly become apparent from the description, or understood by practicing the present invention. The purpose and other advantages of the present invention can be realized and obtained by the structures particularly pointed out in the written description and the accompanying drawings.

[0014] The technical solution of the present invention is further described in detail below through the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings:

[0016] Figure 1 A schematic structural diagram of a wafer drying device provided by an embodiment of the present invention;

[0017] Figure 2 A schematic structural diagram of a wafer clamping arm provided by an embodiment of the present invention;

[0018] Figure 3 A schematic structural diagram of a system for wafer drying control provided by an embodiment of the present invention;

[0019] Figure 4 A structural schematic diagram of a lifting and drying arm mechanism provided by an embodiment of the present invention;

[0020] Figure 5 A schematic flow chart of a wafer drying control method provided by an embodiment of the present invention;

[0021] Figure 6 A schematic flow chart of a wafer drying control method provided by an embodiment of the present invention;

[0022] Figure 7 A schematic structural diagram of a wafer drying control device provided in an embodiment of the present invention.

[0023] In the attached drawings: 1. lifting and drying arm mechanism; 101. wafer carrier; 102. support and positioning vertical plate; 103. front guide plate; 104. rear guide plate; 105. front guide plate of the arm; 106. rear guide plate of the arm; 107. lifting drive mechanism; 109. drive guide mechanism; 110. lifting solenoid valve; 111. lifting control valve 111;

[0024] 2. Semiconductor wafer; 3. Wafer cleaning process water tank; 5. Robotic arm; 7. PLC;

[0025] 4. Wafer drying equipment; 401. Drying box; 402. Clean air knife; 403. Drying box cover; 404. Drying tunnel; 405. Negative pressure laminar flow cover; 406. Negative pressure regulating valve; 407. Start-stop beam sensor; 408. Drying gas flow control valve;

[0026] 6. Wafer clamping arm; 601. Clamping arm; 602. Clamping fingers; 603. Cylinder structure; 604. Presence or absence of a beam sensor. DETAILED DESCRIPTION

[0027] The present invention is further described in detail below with reference to specific embodiments, but the embodiments of the present invention are not limited thereto.

[0028] With the development of science and technology, the degree of automation in the manufacture of semiconductor products is getting higher and higher. During the production process, the wafer needs to be placed in a wet process environment. After the wafer is pulled out of the wet process environment, the wafer needs to be dried before the subsequent manufacturing process can be carried out. In an embodiment of the present invention, the system for wafer drying control can control the wafer clamping arm by controlling the mechanical arm, so that the wafer clamping arm clamps the semiconductor wafer and completely inserts it into the drying tunnel of the wafer drying equipment, and controls the clean air knife of the wafer drying equipment to open the air nozzle to spray dry gas. After the dry air flow beam is refracted, reflected, and mixed to form a positive pressure static pressure cavity in the wafer drying equipment, the positive pressure dry air flow can overflow into the drying tunnel through the slit on the drying tunnel to dry the wafer and the clamping arm in the drying tunnel. In this way, the drying of the wafer can be realized automatically, reducing manual operation, thereby reducing secondary pollution of the wafer and improving the production efficiency of the wafer. In addition, the lifting and drying arm mechanism can also be controlled to slowly pull the semiconductor wafer out of the cleaning process water tank, thereby controlling the water film of the wafer, improving the microscopic quality of the wafer surface, and further accelerating the drying speed of the wafer.

[0029] like Figure 1 As shown, the wafer drying device 4 includes: a drying box 401, a clean air knife 402, a drying box cover 403, and a drying tunnel 404. The drying tunnel 404 can be used to insert a wafer clamping arm 6 clamping a semiconductor wafer 2, and includes: two parallel boiling wall panels with slits, and two tunnel covers.

[0030] In this way, the wafer clamping arm 6 for clamping the semiconductor wafer 2 is inserted into the drying tunnel 404, and after the wafer completely enters the drying tunnel 404, the clean air knife 402 opens the air nozzle, and the dry gas enters the wafer drying equipment 4. After the dry air flow wind beam is refracted, reflected, and mixed to form a positive pressure static pressure cavity, the clean air knife 402 of the positive pressure static pressure cavity scatters the air flow and sputters the surrounding of the positive pressure static pressure cavity jet port, and the internal reflection and mixed flow form a positive pressure static pressure environment. The positive pressure static pressure cavity overflows the static pressure air flow to the outside. In the positive pressure static pressure cavity, the air knife drying wind curtain is shielded by the static pressure positive pressure compression and does not scatter. Through the overflow port, the dry laminar wind cuts and sweeps the drying tunnel space. At this time, the wafer clamping arm clamps the wafer in the drying tunnel, and the dry air curtains on both sides stimulate the water vapor boiling on the surface of the wafer clamping arm 6 and the wafer 2 to stimulate atomization and gasification separation, so as to achieve the drying of the semiconductor wafer and the clamping arm in the drying tunnel.

[0031] like Figure 1As shown, in some embodiments, the wafer drying device 4 further includes: a negative pressure laminar flow cover plate 405. That is, the wafer drying device 4 also includes an exhaust mechanism, which is connected to the exhaust device through the exhaust mechanism, so that when the exhaust device is working, the gas in the wafer drying device 4 can be extracted through the negative pressure laminar flow, which speeds up the flow speed of the airflow, thereby further speeding up the efficiency of wafer drying, and can also make the surface of the wafer and the clamping arm dry with negative pressure laminar flow.

[0032] In order to keep the wafer drying equipment in a clean state, in the embodiments disclosed in the present invention, the exhaust device can be kept in a normally open state, and the wafer drying equipment is always in a negative pressure extraction state. In order to reduce energy consumption, the exhaust device can be kept running at a relatively low flow rate. In order to balance drying efficiency and energy consumption, in some embodiments, such as Figure 1 As shown, the wafer drying equipment may further include: a negative pressure regulating valve 406, which can be respectively connected to the exhaust mechanism and the suction device of the wafer drying equipment, so that when there are wafers and their corresponding clamping arms in the drying tunnel of the wafer drying equipment, the negative pressure regulating valve can increase the suction flow of the suction device; if there are no wafers and their corresponding clamping arms in the drying tunnel of the wafer drying equipment, the negative pressure regulating valve can reduce the suction flow of the suction device, that is, the negative pressure regulating valve connected to the exhaust mechanism is configured to adjust the flow rate of gas extracted from the wafer drying equipment.

[0033] To improve the automation and intelligence of wafer drying equipment, such as Figure 1 As shown, in some embodiments, the wafer drying device further includes: a start-stop cross-beam sensor 407 located on the drying box cover 403, which is configured to detect whether the wafer clamping arm 6 holding the wafer 2 is located in the drying tunnel. That is, the transmitting end of the start-stop cross-beam sensor 407 emits light, and if the receiving end receives the light, it can be determined that the wafer clamping arm 6 holding the wafer 2 is not located in the drying tunnel, and the wafer drying device does not need to dry the wafer, and only needs to keep the device clean. If the receiving end does not receive the light, it can be determined that the wafer clamping arm 6 holding the wafer 2 is located in the drying tunnel, and a dry airflow can be input into the wafer drying device to dry the corresponding wafer.

[0034] It can be seen that the wafer clamping arm 6 can clamp the semiconductor wafer 2, and during the wafer drying process, it needs to be inserted into the drying tunnel of the wafer drying device 4. Figure 2As shown, the wafer clamping arm 6 may include: a clamping arm 601, a clamping finger 602, a cylinder structure 603, a presence / absence of a beam sensor 604, and the like. In this way, after the clamping finger 602 clamps the semiconductor wafer 2, the clamping arm 601 can be moved up and down through the cylinder structure 603, so that the specific position of the wafer 2 can be determined through the presence / absence of a beam sensor 604. For example, when the wafer clamping arm 6 clamping the semiconductor wafer 2 is located above the wafer drying device 4 and has not yet entered the drying tunnel, the presence / absence of a beam sensor 604 cannot receive the emitted light signal, but the wafer 2 can receive the light signal after it descends into the drying tunnel, so that it can be determined that the wafer 2 has completely entered the drying tunnel. Of course, after the wafer rises out of the drying tunnel, the presence / absence of a beam sensor 604 cannot receive the emitted light signal.

[0035] A programmable logic controller (PLC) is a digital operation electronic system designed specifically for use in an industrial environment. It uses a programmable memory to store instructions for performing logic operations, sequential control, timing, counting, and arithmetic operations, and controls various types of mechanical equipment or production processes through digital or analog input and output. In the embodiment of the present invention, the wafer drying device 4, the wafer clamping arm 6, etc. can be controlled by the PLC to realize the automation of wafer drying.

[0036] like Figure 3 As shown, a system for wafer drying control provided by an embodiment of the present disclosure includes: a wafer drying device 4, a robot arm 5, a wafer clamping arm 6, and a PLC 7, wherein:

[0037] The wafer drying equipment 4 comprises: a drying tunnel for inserting a wafer clamping arm 6 for clamping the semiconductor wafer 2, and a clean air knife 402 for spraying dry gas, and there are two opposite slits on the drying tunnel, and the clean air knives 403 are symmetrically distributed on both sides of the slits.

[0038] PLC7 is configured to control the clean air knife 402 to open the air nozzle so that the dry gas passes through the slit to dry the semiconductor wafer 2 in the drying tunnel, and control the robot arm 5 to lift the wafer clamping arm 6 when it is determined that all the semiconductor wafers 2 clamped by the wafer clamping arm 6 have entered the drying tunnel; and control the clean air knife 402 to stop spraying when it is determined that all the semiconductor wafers 2 have been lifted out of the drying tunnel.

[0039] The wafer drying device can be as described above, and the drying gas enters the wafer drying device 4 through the clean air knife 402, so that Figure 3As shown, PLC7 can be connected to the dry gas flow control valve 408, and the dry gas flow control valve 408 is respectively connected to the dry gas source and the clean air knife 402, and under the control of PLC7, the gas path between the dry gas source and the clean air knife 402 is connected, or the gas path between the dry gas source and the clean air knife 402 is closed. Therefore, PLC7 can control the clean air knife 402 of the wafer drying equipment 4 through the dry gas flow control valve 408, that is, when the wafer needs to be dried, the flow rate of the dry gas sprayed by the clean air knife 402 can be controlled through the dry gas flow control valve 408.

[0040] The mechanical arm 5 can be connected to the cylinder structure 603 of the wafer drying device 4, so that the wafer clamping arm 6 can be controlled by the mechanical arm 5, so that the wafer clamping arm 6 clamping the semiconductor wafer 2 can move up and down, so that it can be inserted into the drying tunnel of the wafer drying device 4, or rise out of the drying tunnel of the wafer drying device 4. Of course, the wafer clamping arm 6 can also be moved to other positions by the mechanical arm 5.

[0041] In this way, during the wafer drying process, when it is determined that the semiconductor wafer 2 held by the wafer clamping arm 6 has fully entered the drying tunnel, the PLC can control the dry gas flow control valve 408 to open, so that the clean air knife 402 opens the air nozzle, so that the dry gas enters the wafer drying equipment, and the dry air flow beam is refracted, reflected, and mixed to form a positive pressure static pressure cavity. The clean air knife 402 of the positive pressure static pressure cavity scatters the air flow and sputters the surrounding of the positive pressure static pressure cavity jet port, and the internal reflection and mixing flow form a positive pressure static pressure environment. The positive pressure static pressure cavity overflows the static pressure air flow to the outside. In the positive pressure static pressure cavity, the air knife drying wind curtain is shielded by the static pressure positive pressure compression and does not scatter. Through the overflow port, the dry laminar air cut sweeps the drying tunnel space. At this time, the dry air curtains on both sides stimulate the water vapor boiling on the surface of the wafer clamping arm 6 and the wafer 2 to stimulate atomization and gasification separation, so as to achieve the drying of the semiconductor wafer and the clamping arm in the drying tunnel.

[0042] Moreover, when the clean air knife 402 opens the nozzle and sprays the drying gas, the PLC7 also controls the mechanical arm 5 to lift the wafer clamping arm, that is, lifting while drying. Of course, the PLC7 can also control the lifting speed. Generally, for the same wafer, the corresponding lifting speed from the drying tunnel is smaller than the corresponding descending speed when the wafer is inserted into the drying tunnel.

[0043] Of course, if it is determined that the wafer clamping arm 6 clamps the semiconductor wafer 2 and fully lifts it out of the drying tunnel, the PLC can control the dry gas flow control valve 408 to close, so that the clean air knife 402 cannot spray dry gas, that is, the clean air knife 402 is controlled to stop spraying through the dry gas flow control valve 408, thus saving energy consumption. Of course, the PLC also controls the mechanical arm 5 to stop rising, so that the subsequent process can be carried out.

[0044] There are many ways to determine the relative position between the wafer and the drying tunnel. After manual determination, a corresponding instruction can be given to the PLC, so that the PLC can control the robot arm, the drying gas flow control valve 408, and the clean air knife 402 according to the corresponding instruction. Of course, in order to further improve the automation and intelligence of wafer drying control, other position detection equipment can also be used to determine the relative position between the wafer and the drying tunnel, such as: a beam sensor.

[0045] Since the wafer clamping arm 6 is provided with a cross-beam sensor 604, the relative position between the wafer and the drying tunnel can be determined by the cross-beam sensor 604. Therefore, in some embodiments, the wafer clamping arm 6 includes a cross-beam sensor, and is configured to generate a stop descent signal and send it to PLC7 when receiving a light signal after the semiconductor wafer 2 descends into the drying tunnel; PLC7 is also configured to control the robotic arm 5 to descend the wafer clamping arm 6 clamping the semiconductor wafer 2, and when receiving the stop descent signal, control the robotic arm 5 to stop running, and determine that the wafer clamping arm 6 clamping the semiconductor wafer 2 has fully entered the drying tunnel of the wafer drying equipment 4.

[0046] The presence or absence of a corresponding beam sensor 604 can be connected to the PLC7. The PLC controls the robotic arm 5 so that the wafer clamping arm 6 holding the semiconductor wafer 2 descends and enters the drying tunnel of the wafer drying equipment. In the initial stage of the descending operation, due to the obstruction of the wafer 2, the presence or absence of a corresponding beam sensor 604 cannot receive the emitted light signal. Once the wafer 2 completely enters the drying tunnel, the presence or absence of a corresponding beam sensor 604 can receive the emitted light signal. At this time, the PLC can determine that a stop descending signal has been obtained based on the change process of the light signal from nothing to something, thereby controlling the robotic arm 5 to stop running, that is, the wafer 2 is already completely in the drying tunnel and does not need to be descended, and the corresponding drying operation can be carried out.

[0047] The relative position between the wafer and the drying tunnel can be determined by the presence or absence of the cross-beam sensor 604. To further improve the accuracy of determining the wafer position, in some embodiments, the PLC 7 is further configured to obtain the current coordinate information of the robot arm 5 when receiving the stop descending signal, and control the robot arm 5 to stop moving when the current coordinate information matches the drying process coordinate information. Since the positions of the robot arm, the wafer drying equipment, etc. are relatively fixed during the wafer drying process, the coordinate information corresponding to the robot arm inserting the wafer 2 into the drying tunnel through the wafer clamping arm 6 can be saved, that is, the drying process coordinate information matching. Different types of semiconductor wafers have different corresponding drying process coordinate information.

[0048] In this way, when receiving the stop descending signal of the presence / absence sensor 604, the PLC 7 can obtain the current coordinate information of the robot arm 5, and can also determine the drying process coordinate information corresponding to the semiconductor wafer 2 clamped by the wafer clamping arm 6, and control the robot arm 5 to stop moving when the current coordinate information matches the drying process coordinate information. The position of the wafer 2 can be determined through double verification, thereby improving the accuracy of wafer drying control.

[0049] In some embodiments, since the wafer drying equipment 4 includes a start-stop beam sensor 407, the start-stop beam sensor 407 can also be connected to PLC7, so that the relative position between the wafer and the drying tunnel can be doubly verified by the presence or absence of the beam sensor 604 and the start-stop beam sensor 407, that is, the wafer drying equipment 4 includes a start-stop beam sensor, which is configured to generate a drying start instruction and send it to PLC7 when no light signal is received after the semiconductor wafer 2 reaches the descending drying tunnel; PLC7 is specifically configured to control the robot arm 5 to stop moving when a stop descent signal is received and a drying start instruction is received.

[0050] The PLC controls the robotic arm 5 so that the wafer clamping arm 6 holding the semiconductor wafer 2 descends and enters the drying tunnel of the wafer drying equipment. In the initial stage of the descending operation, the wafer is located above the wafer drying equipment 4, and the start-stop shooting sensor 407 can receive the emitted light signal. Once the wafer 2 enters the drying tunnel, the start-stop shooting sensor 407 cannot receive the emitted light signal. Therefore, when receiving the stop descent signal from the presence or absence shooting sensor 604, if the PLC7 also receives the drying start instruction generated by the start-stop shooting sensor 407 based on the failure to receive the light signal, the robotic arm 5 can be controlled to stop running and determine that the wafer clamping arm 6 holding the semiconductor wafer 2 has fully entered the drying tunnel of the wafer drying equipment 4.

[0051] Of course, in some embodiments, the wafer position can be triple-verified by the presence or absence of the opposing beam sensor 604, the start / stop opposing beam sensor 407, and the coordinate information of the robot arm 5, so as to further improve the accuracy of wafer drying control, which will not be described in detail.

[0052] In some embodiments, Figure 1 As shown, the wafer drying equipment 4 may also include: a negative pressure regulating valve 406 connected to the exhaust device, which can be connected to the exhaust mechanism and the exhaust device of the wafer drying equipment respectively. In this way, PLC7 is also configured to place the valve of the negative pressure regulating valve in the first gear when it is determined that all the semiconductor wafers 2 clamped by the wafer clamping arm 6 have entered the drying tunnel, so that the surfaces of the semiconductor wafer 2 and the wafer clamping arm 6 are dried by negative pressure laminar flow; and, when it is determined that all the semiconductor wafers 2 are lifted out of the drying tunnel, place the valve in the second gear so that the wafer drying equipment 4 remains clean, wherein the flow rate corresponding to the first gear is greater than the flow rate corresponding to the second gear.

[0053] PLC7 can be connected to the negative pressure regulating valve 406. In this way, PLC7 can control the valve of the negative pressure regulating valve to be in the first gear when it determines that the wafer clamping arm clamps the semiconductor wafer and all enters the drying tunnel through one or more of the start and stop of the shooting sensor 407, the presence or absence of the shooting sensor 604, the coordinate information of the robot arm, etc., and can control the valve of the negative pressure regulating valve to be in the second gear when it determines that the semiconductor wafer 2 is completely lifted out of the drying tunnel. The flow rate corresponding to the first gear is greater than the flow rate corresponding to the second gear, that is, when the wafer is dried, the exhaust flow rate is large, and when it is only used for cleaning, the exhaust flow rate is small, which improves the automation of the wafer drying process and takes into account the drying efficiency and energy saving.

[0054] Of course, for different types of wafers, the corresponding drying gas flow rate and the lifting speed of the robot arm may be different during the drying process. Therefore, in some embodiments, PLC7 is specifically configured to determine the current number of air nozzles opened by the clean air knife 402 and the current lifting speed of the robot arm 5 according to the type information of the semiconductor wafer 2, and control the clean air knife 402 to open the current number of air nozzles for drying gas injection, and control the robot arm 5 to lift the wafer clamping arm 6 according to the current lifting speed.

[0055] For example, for a 12-inch wafer, the lifting speed of the robot arm is 10 cm per second, and the lowering speed of the robot arm when inserting the wafer is 15 cm per second. The clean air knife 402 can open 6 air nozzles on both sides. For an 8-inch or 6-inch wafer, the clean air knife 402 opens 4 air nozzles on both sides. In addition, the lowering speed and lifting speed of the robot arm are faster than the corresponding lowering speed and lifting speed of the 12-inch wafer.

[0056] PLC7 can be connected to the clean air knife 402 and the robot arm 5 control, and can save the wafer type information and the number of air nozzles, as well as the corresponding relationship between the descending speed and the lifting speed. In this way, after the PLC obtains the current type information of the wafer 2 clamped by the wafer clamping arm 6, it can determine the corresponding current number, current lifting speed, and current descending speed according to the saved corresponding relationship. Therefore, according to the previous descending speed, the PLC controls the robot arm to insert all the wafers 2 clamped by the wafer clamping arm 6 into the drying tunnel, and then stops descending the robot arm. In addition, the PLC controls the clean air knife 402 to open the current number of air nozzles to spray dry gas, and controls the robot arm according to the current lifting speed to lift all the wafers out of the drying tunnel.

[0057] When it is determined that all semiconductor wafers 2 are lifted out of the drying tunnel, the PLC can control the clean air knife 402 to stop spraying. Of course, the mechanical arm 5 can also be controlled to drive the wafer clamping arm 6 to perform operations matching other processes. The method of determining that all semiconductor wafers 2 are lifted out of the drying tunnel can also be to manually send a corresponding instruction, or, as mentioned above, to determine by one or more of the presence or absence of a beam sensor, the start and stop beam sensor, and the current coordinate information of the mechanical arm, which will not be described in detail.

[0058] It can be seen that in the embodiment of the present invention, the system for wafer drying control can control the wafer clamping arm by controlling the mechanical arm, so that the semiconductor wafer clamped by the wafer clamping arm is fully inserted into the drying tunnel of the wafer drying equipment, and the clean air knife of the wafer drying equipment is controlled to open the air nozzle to spray dry gas. After the dry air flow beam is refracted, reflected, and mixed to form a positive pressure static pressure cavity in the wafer drying equipment, the positive pressure dry air flow can overflow into the drying tunnel through the slit on the drying tunnel to dry the wafer and the clamping arm in the drying tunnel. In this way, the drying of the wafer can be realized automatically, manual operation is reduced, and secondary pollution of the wafer is reduced, thereby improving the production efficiency of the wafer. In addition, the process parameters of the drying process can be determined according to the type of wafer, further taking into account production efficiency and energy consumption.

[0059] During the production process of wafers, the wafers need to be placed in a circular wet process environment, cleaned, and then pulled up from the circular wet process environment for corresponding drying treatment. In some embodiments of the present invention, the pulling up of the wafers from the circular wet process environment can also be automatically controlled accordingly, and the slow lifting technology can be used to slowly pull the semiconductor wafer out of the cleaning process water tank, thereby controlling the water film of the wafer, improving the microscopic quality of the wafer surface, and further accelerating the drying speed of the wafer.

[0060] like Figure 3As shown, the system for wafer drying control also includes: a lifting and drying arm mechanism 1, and the lifting solenoid valve 110 and the lifting control valve 111 in the lifting and drying arm mechanism 1 can be connected to PLC7, so that PLC7 can control the lifting solenoid valve 110 and the lifting control valve 111 to enable the lifting and drying arm mechanism 1 to pull the semiconductor wafer 2 out of the cleaning process water tank 3, that is, to pull the wafer out of the wet process environment, and then, the robot arm 5 can be controlled to act as a wafer clamping arm 6 to hold the semiconductor wafer 2, and run it to the top of the wafer drying equipment 4 to perform the next step of wafer drying treatment.

[0061] like Figure 3 and Figure 4 As shown, the lifting and drying arm mechanism 1 includes: a wafer carrier 101, a lifting drive mechanism 107, a lifting solenoid valve 110, and a lifting control valve 111. In this way, when the wafer 2 needs to be lifted out of the cleaning process water tank 3, the PLC can start the lifting and lifting solenoid valve 110, and then drive the wafer carrier 101 loaded with the wafer 2 to move upward through the lifting drive mechanism 107, so that the lifting and drying arm mechanism 1 can lift the semiconductor wafer 2 out of the cleaning process water tank 3. In addition, the PLC can also control the rising speed of the lifting drive mechanism 107 through the lifting control valve 111. PLC 7 controls the standard lifting process action of the lifting and drying arm mechanism 1 through the lifting solenoid valve 110; and PLC7 controls the slow lifting and drying process action of the wafer by the lifting and drying arm mechanism 1 through the lifting control valve 111. That is, PLC7 is also configured to control the lifting control valve 111 and the lifting solenoid valve 110 according to the first speed matching the pretreatment drying process, so that the lifting and drying arm mechanism 1 pulls the semiconductor wafer 2 out of the cleaning process water tank 3, and controls the robot arm 5 to operate the wafer clamping arm 6 to clamp the semiconductor wafer 2, and then runs to the top of the wafer drying equipment 4.

[0062] In some embodiments, the PLC can use a slow-pulling technique to control the pull-up and drying arm mechanism 1 to pull the wafer out of the cleaning process water tank, and the pull-up and drying arm mechanism has a standard speed control lifting and a controllable speed slow-pulling lifting and lifting. The two lifting speeds are switched according to process requirements. In this way, the process of pulling the wafer out of the cleaning process water tank can be used as a pre-treatment drying process. That is, during the pulling process, the first speed matching the pre-treatment drying process can be determined in real time. This first speed can be variable. Then, the PLC7 controls the pull-up and drying arm mechanism 1 to slowly pull and dry the wafer according to the first speed through the pull control valve 111. In this way, the water film of the wafer can be controlled to improve the surface quality of the wafer drying.

[0063] Of course, the first speed matching the pretreatment drying process can be determined based on multiple experimental data or big data obtained in other ways. During the pulling process, this first speed can be variable.

[0064] It can be seen that the PLC can control the lifting and drying arm mechanism 1 to pull the semiconductor wafer 2 out of the cleaning process water tank 3, and control the mechanical arm 5 to operate the wafer clamping arm 6 to clamp the semiconductor wafer 2, and then run to the top of the wafer drying equipment 4. Then, the PLC continues to control the mechanical arm 5 to insert the wafer clamping arm 6 into the drying tunnel of the wafer drying equipment, and when it is determined that the wafer clamping arm 6 holding the wafer 2 has been inserted into the drying tunnel of the wafer drying equipment, the clean air knife 402 is controlled to open the gas nozzle so that the dry gas passes through the slit to dry the semiconductor wafer in the drying tunnel, and the mechanical arm 5 is controlled to lift the wafer clamping arm. At the same time, the negative pressure regulating valve can also be controlled to use a larger negative pressure to make the surface of the wafer and the clamping arm dry under negative pressure laminar flow. Finally, when it is determined that the semiconductor wafer 2 is lifted out of the drying tunnel, the PLC controls the clean air knife 402 to stop spraying.

[0065] It can be seen that in the embodiment of the present invention, the system for wafer drying control can slowly pull up the wafer to control the water film out of the wafer, and can control the wafer clamping arm through the robotic arm to clamp the wafer into the drying tunnel of the wafer drying equipment for drying, and can control the drying gas flow, negative air pressure flow, and the speed of the robotic arm and other process parameters to achieve automatic drying of the wafer, improve the production efficiency of the wafer, and save energy consumption.

[0066] like Figure 5 As shown, a method for wafer drying control provided by an embodiment of the present disclosure is applied to the above-mentioned system for wafer drying control, including:

[0067] Step 5001: When it is determined that all the semiconductor wafers held by the wafer clamping arm have entered the drying tunnel of the wafer drying equipment, the clean air knife of the wafer drying equipment is controlled to open the air nozzle so that the dry gas passes through the slit to dry the semiconductor wafers in the drying tunnel, and the robotic arm is controlled to lift the wafer clamping arm.

[0068] In some embodiments, determining that all semiconductor wafers held by the wafer clamping arm have entered the drying tunnel of the wafer drying equipment includes: controlling the robotic arm 5 to lower the wafer clamping arm 6 holding the semiconductor wafer 2, and when receiving a stop descending signal, controlling the robotic arm 5 to stop running, and determining that all semiconductor wafers 2 held by the wafer clamping arm 6 have entered the drying tunnel of the wafer drying equipment 4, wherein the stop descending signal is generated and sent by whether there is a corresponding radiation sensor in the wafer clamping arm 6 after receiving a light signal after the semiconductor wafer 2 descends into the drying tunnel.

[0069] In some embodiments, determining that all semiconductor wafers held by the wafer clamping arm have entered the drying tunnel of the wafer drying equipment also includes: upon receiving a stop descent signal, obtaining current coordinate information of the robotic arm 5, and controlling the robotic arm 5 to stop moving when the current coordinate information matches the drying processing coordinate information.

[0070] In some embodiments, determining that all semiconductor wafers held by the wafer holding arm have entered the drying tunnel of the wafer drying device further includes: in the case of receiving a stop descending signal, if a drying start instruction is received, controlling the mechanical arm 5 to stop moving. The drying start instruction is generated and sent by the start-stop shooting sensor in the wafer drying device 4 when the semiconductor wafer 2 does not receive an optical signal after entering the descending drying tunnel.

[0071] It can be seen that the PLC can determine the relative position relationship between the wafer and the drying tunnel through one, two or more of the non-reflective sensor, the current coordinate information of the robot arm 5, and the start-stop reflective sensor, thereby achieving double or multiple guarantees and further improving the accuracy of wafer drying control.

[0072] In this way, during the wafer drying process, when it is determined that the semiconductor wafer 2 held by the wafer clamping arm 6 has fully entered the drying tunnel, the PLC can control the dry gas flow control valve 408 to open, so that the clean air knife 402 opens the air nozzle, so that the dry gas enters the wafer drying equipment, and the dry air flow beam is refracted, reflected, and mixed to form a positive pressure static pressure cavity. The clean air knife 402 of the positive pressure static pressure cavity scatters the air flow and sputters the surrounding of the positive pressure static pressure cavity jet port, and the internal reflection and mixing flow form a positive pressure static pressure environment. The positive pressure static pressure cavity overflows the static pressure air flow to the outside. In the positive pressure static pressure cavity, the air knife drying wind curtain is shielded by the static pressure positive pressure compression and does not scatter. Through the overflow port, the dry laminar air cut sweeps the drying tunnel space. At this time, the dry air curtains on both sides stimulate the water vapor boiling on the surface of the wafer clamping arm 6 and the wafer 2 to stimulate atomization and gasification separation, so as to achieve the drying of the semiconductor wafer and the clamping arm in the drying tunnel.

[0073] The drying gas may be nitrogen, or other inert gases used in industrial production.

[0074] In some embodiments, during the wafer drying process, the PLC can also control various specific process parameters, that is, control the clean air knife to open the air nozzle so that the dry gas passes through the slit to dry the semiconductor wafers in the drying tunnel, and control the robot arm to lift the wafer clamping arm. The specific process may include: determining the current number of air nozzles opened by the clean air knife 402 and the current lifting speed of the robot arm 5 according to the type information of the semiconductor wafer 2, and controlling the clean air knife 402 to open the current number of air nozzles for drying gas injection, and controlling the robot arm 5 to lift the wafer clamping arm 6 according to the current lifting speed.

[0075] For example, for a 12-inch wafer, the lifting speed of the robot arm is determined to be 10 cm / s, the lowering speed of the robot arm when inserting the wafer is 15 cm / s, and the six air nozzles on both sides of the clean air knife 402 can be opened. For an 8-inch or 6-inch wafer, the four air nozzles on both sides of the clean air knife 402 can be opened, and the lowering speed and lifting speed of the robot arm are determined to be faster than the lowering speed and lifting speed corresponding to the 12-inch wafer.

[0076] Different wafers correspond to different process parameter values. This not only improves the automation and intelligence of wafer drying, but also further reduces energy consumption.

[0077] Step 5002: When it is determined that all semiconductor wafers are lifted out of the drying tunnel, control the clean air knife to stop spraying.

[0078] Of course, the positional relationship between the wafer and the drying tunnel can also be determined as described above. After all the semiconductor wafers are lifted out of the drying tunnel, the drying process of the wafers can be stopped, that is, the clean air knife 402 can be controlled to stop spraying, the dry gas flow control valve 408 can be controlled to close, and of course, the clean air knife 402 can also be controlled to close the air nozzle.

[0079] It can be seen that in the embodiment of the present invention, the PLC controls the wafer clamping arm through the mechanical arm, so that the semiconductor wafer clamped by the wafer clamping arm is fully inserted into the drying tunnel of the wafer drying equipment, and controls the clean air knife of the wafer drying equipment to open the air nozzle to spray dry gas. After the dry air flow beam is refracted, reflected, and mixed to form a positive pressure static pressure cavity in the wafer drying equipment, the positive pressure dry air flow can overflow into the drying tunnel through the slit on the drying tunnel to dry the wafer and the clamping arm in the drying tunnel. In this way, the drying of the wafer can be realized automatically, manual operation is reduced, and the secondary pollution of the wafer is reduced, thereby improving the production efficiency of the wafer.

[0080] In some embodiments, the method for wafer drying control also includes: when it is determined that all the semiconductor wafers 2 clamped by the wafer clamping arm 6 have entered the drying tunnel, the valve of the negative pressure regulating valve connecting the wafer drying equipment and the exhaust equipment is in the first gear position, so that the surface of the semiconductor wafer 2 and the wafer clamping arm 6 are dried by negative pressure laminar flow; and, when it is determined that all the semiconductor wafers 2 are lifted out of the drying tunnel, the valve is in the second gear position, so that the wafer drying equipment 4 remains clean, wherein the flow rate corresponding to the first gear is greater than the flow rate corresponding to the second gear.

[0081] In this way, when the wafer is dried, the exhaust flow rate is large, and when it is only used for cleaning, the exhaust flow rate is small, which improves the automation of the wafer drying process and takes into account the drying efficiency and energy saving.

[0082] The amount of water on the wafer is related to the speed at which the wafer is pulled out of the water tank. Therefore, in some embodiments, the method for controlling wafer drying also includes: controlling the lifting control valve 111 and the lifting solenoid valve 110 according to a first speed matching the pretreatment drying process, so that the lifting and drying arm mechanism 1 pulls the semiconductor wafer 2 out of the cleaning process water tank 3, and controls the robotic arm 5 to operate the wafer clamping arm 6 to clamp the semiconductor wafer 2, and then runs to the top of the wafer drying equipment 4.

[0083] Among them, PLC 7 controls the standard lifting process action of the lifting and drying arm mechanism 1 through the lifting solenoid valve 110; and PLC7 controls the lifting and drying arm mechanism 1 through the lifting control valve 111 to perform the slow lifting and drying process action on the wafer. That is, PLC can use the slow lifting technology to control the lifting and drying arm mechanism 1 to lift the wafer out of the cleaning process water tank, so that the process of pulling the wafer out of the cleaning process water tank can be used as a pretreatment drying process. That is, during the lifting process, the first speed matching the pretreatment drying process can be determined in real time, and this first speed can be variable. Then, PLC7 controls the lifting and drying arm mechanism 1 through the lifting control valve 111 according to the first speed to perform the slow lifting and drying process action on the wafer. In this way, the water film of the wafer can be controlled to improve the surface quality of the wafer drying.

[0084] The specific process of wafer drying control is described below in conjunction with a specific implementation.

[0085] In this embodiment, the system for controlling wafer drying can be as follows: Figure 3 As shown, of course, the system can also include air intake equipment, such as: a nitrogen source and its corresponding peripheral control valves, exhaust equipment, connected to the wafer drying equipment through a negative pressure regulating valve, and the PLC can also be electrically connected to the clean air knife, the presence or absence of a corresponding radiation sensor, the start and stop corresponding radiation sensor, etc.

[0086] like Figure 6As shown, the process of wafer drying control includes:

[0087] Step 6001: The PLC uses a lifting control valve to cause the lifting and drying arm mechanism to slowly lift the semiconductor wafer out of the cleaning process water tank according to a first speed that matches the pretreatment drying process.

[0088] Step 6002: Determine whether all wafers are pulled out from the cleaning process water tank. If yes, execute step 6003; otherwise, return to step 6001.

[0089] Here, the PLC can determine the specific position of the wafer and the cleaning process tank according to the corresponding inspection sensor in the lifting and drying arm mechanism. For example, the lifting and drying arm mechanism is equipped with a positioning sensor. When the wafer carrier reaches the set position, the positioning sensor can be triggered. Thus, the PLC can determine that all wafers are lifted out of the cleaning process tank. Of course, there are other ways to determine the specific position of the wafer and the cleaning process tank, which are not listed one by one.

[0090] Step 6003: When it is determined that the wafer clamping arm driven by the robotic arm to clamp the wafer is located above the tunnel entrance of the wafer drying equipment, the PLC determines the descending speed corresponding to the wafer, and controls the robotic arm to insert the wafer clamping arm holding the semiconductor wafer into the drying tunnel of the wafer drying equipment according to the descending speed.

[0091] Here, it can be determined manually or based on the current coordinate information of the robotic arm, to determine that the wafer clamping arm driven by the robotic arm to clamp the wafer is located above the tunnel entrance of the wafer drying equipment.

[0092] Step 6004: Determine whether a stop descending signal sent by the beam sensor is received. If yes, execute step 6005; otherwise, return to step 6004.

[0093] Step 6005: PLC obtains the current coordinate information of the robot arm.

[0094] Step 6006: Determine whether the current coordinate information matches the stored drying process coordinate information. If yes, execute step 6008; otherwise, execute step 6007.

[0095] Step 6007: PLC adjusts the position of the robot arm according to the drying process coordinate information and returns to step 6005.

[0096] Step 6008: The PLC controls the robot arm to stop running, and determines the current number of air nozzles opened that matches the type information of the wafer, and the current lifting speed of the robot arm.

[0097] Step 6009: PLC controls the dry gas flow control valve to open, controls the clean air knife to open the current number of air nozzles to spray dry gas, and controls the valve of the negative pressure regulating valve to be in the first gear position.

[0098] In this way, nitrogen enters the wafer drying equipment, and the dry air flow beam is refracted, reflected, and mixed to form a positive pressure static pressure chamber. The clean wind knife of the positive pressure static pressure chamber scatters the air flow to sputter the surrounding area of ​​the positive pressure static pressure chamber jet port, and the internal reflection and mixing flow form a positive pressure static pressure environment. The positive pressure static pressure chamber overflow port overflows the static pressure air flow to the outside. Inside the positive pressure static pressure chamber, the wind knife drying air curtain is shielded by the static pressure positive pressure compression and does not scatter. Through the overflow port, the dry laminar wind cuts and sweeps the drying tunnel space. At this time, the dry air curtains on both sides stimulate the boiling of water vapor on the wafer clamping arm and the wafer surface to stimulate atomization and gasification separation, thereby achieving the drying of the semiconductor wafers and clamping arms in the drying tunnel. In addition, the exhaust equipment can also enable negative pressure laminar flow drying of the semiconductor wafers and the wafer clamping arm surfaces.

[0099] Step 6010: The PLC controls the robot arm to lift the wafer clamping arm according to the current lifting speed.

[0100] Among them, step 6009 and step 6010 can be executed synchronously.

[0101] Step 6011: Determine whether all semiconductor wafers are lifted out of the drying tunnel. If yes, execute step 6012; otherwise, return to step 6011.

[0102] Here, if a stop rising signal is received from the radiation sensor and the current coordinate information of the robot arm matches the drying stop coordinate information, it can be determined that all the semiconductor wafers have been lifted out of the drying tunnel, wherein the stop rising signal is generated and sent when no light signal is received after all the semiconductor wafers have come out of the drying tunnel.

[0103] Step 6012: PLC controls the dry gas flow control valve to close, controls the clean air knife to stop spraying, controls the valve of the negative pressure regulating valve to be in the second gear, and controls the robot arm to stop running.

[0104] It can be seen that in the embodiment of the present invention, the PLC can slowly pull up the wafer to control the water film out of the wafer, and can control the wafer clamping arm through the robotic arm to clamp the wafer into the drying tunnel of the wafer drying equipment for drying, and can control the drying gas flow, negative air pressure flow, and the speed of the robotic arm and other process parameters to achieve automatic drying of the wafer, improve the production efficiency of the wafer, and save energy consumption.

[0105] Combination Figure 7 , an embodiment of the present invention provides a device 700 for wafer drying control, comprising:

[0106] The processor 1000 and the memory 1001 may also include a communication interface 1002 and a bus 1003. The processor 1000, the communication interface 1002, and the memory 1001 may communicate with each other through the bus 1003. The communication interface 1002 may be used for information transmission. The processor 1000 may call the logic instructions in the memory 1001 to execute the method for controlling semiconductor manufacturing equipment of the above embodiment.

[0107] In addition, the logic instructions in the above-mentioned memory 1001 can be implemented in the form of software functional units and can be stored in a computer-readable storage medium when sold or used as an independent product.

[0108] The memory 1001 is a computer-readable storage medium that can be used to store software programs and computer executable programs, such as program instructions / modules corresponding to the method in the embodiment of the present invention. The processor 1000 executes functional applications and data processing by running the program instructions / modules stored in the memory 1001, that is, implements the method for wafer drying control in the above method embodiment.

[0109] The memory 1001 may include a program storage area and a data storage area, wherein the program storage area may store an operating system and an application required for at least one function; the data storage area may store data created according to the use of the terminal device, etc. In addition, the memory 1001 may include a high-speed random access memory and may also include a non-volatile memory.

[0110] An embodiment of the present invention provides a device for controlling semiconductor manufacturing equipment, comprising: a processor and a memory storing program instructions, wherein the processor is configured to execute a method for controlling wafer drying when executing the program instructions.

[0111] An embodiment of the present invention provides a storage medium storing program instructions, which, when run, execute the above-mentioned method for wafer drying control.

[0112] The present invention is described with reference to flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to embodiments of the present invention. It should be understood that each process and / or block in the flowchart and / or block diagram, as well as the combination of processes and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.

[0113] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.

[0114] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process in the computer or other programmable device. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.

[0115] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A system for wafer drying control, characterized in that: include: Wafer drying equipment (4), a robotic arm (5), a wafer clamping arm (6), and a PLC (7), wherein: The wafer drying device (4) comprises: a drying tunnel for inserting a wafer clamping arm (6) for clamping a semiconductor wafer (2), and a clean air knife (402) for spraying drying gas, and the drying tunnel is provided with two opposite slits, and the clean air knives (402) are symmetrically distributed on both sides of the slits; The PLC (7) is configured to, when it is determined that all the semiconductor wafers (2) clamped by the wafer clamping arm (6) have entered the drying tunnel, control the clean air knife (402) to open the air nozzle so that the dry gas passes through the slit to dry the semiconductor wafers (2) in the drying tunnel, and control the mechanical arm (5) to lift the wafer clamping arm (6); and, when it is determined that all the semiconductor wafers (2) have been lifted out of the drying tunnel, control the clean air knife (402) to stop spraying; Wherein, the wafer drying device (4) further comprises: a negative pressure regulating valve connected to the exhaust device; The PLC (7) is further configured to, when it is determined that all semiconductor wafers (2) clamped by the wafer clamping arm (6) have entered the drying tunnel, place the valve of the negative pressure regulating valve in a first gear position, so that the surfaces of the semiconductor wafer (2) and the wafer clamping arm (6) are dried by negative pressure laminar flow; and, when it is determined that all semiconductor wafers (2) have been lifted out of the drying tunnel, place the valve in a second gear position, so that the wafer drying device (4) remains clean, wherein the flow rate corresponding to the first gear position is greater than the flow rate corresponding to the second gear position.

2. The system according to claim 1, characterized in that The wafer clamping arm (6) includes a presence / absence sensor, and is configured to generate a stop descending signal and send it to the PLC (7) when receiving a light signal after the semiconductor wafer (2) descends into the drying tunnel; The PLC (7) is further configured to control the mechanical arm (5) to lower the wafer clamping arm (6) clamping the semiconductor wafer (2), and when receiving a stop descending signal, control the mechanical arm (5) to stop running, and ensure that all semiconductor wafers (2) clamped by the wafer clamping arm (6) enter the drying tunnel of the wafer drying equipment (4).

3. The system according to claim 2, characterized in that The PLC (7) is further configured to obtain current coordinate information of the robot arm (5) when receiving a stop descending signal, and control the robot arm (5) to stop moving when the current coordinate information matches the drying processing coordinate information.

4. The system according to claim 2, characterized in that The wafer drying device (4) comprises a start-stop beam sensor configured to generate a drying start instruction and send it to a PLC (7) when no light signal is received after the semiconductor wafer (2) reaches the descending drying tunnel; The PLC (7) is specifically configured to control the robot arm (5) to stop moving when receiving a stop descending signal and a drying start instruction.

5. The system according to claim 1, wherein: The PLC (7) is specifically configured to determine the current number of air nozzles opened by the clean air knife (402) and the current lifting speed of the robot arm (5) according to the type information of the semiconductor wafer (2), and control the clean air knife (402) to open the current number of air nozzles to spray dry gas, and control the robot arm (5) to lift the wafer clamping arm (6) according to the current lifting speed.

6. The system according to any one of claims 1 to 5, characterized in that: It also includes: a lifting and drying arm mechanism (1), wherein: The lifting and drying arm mechanism (1) comprises: a lifting solenoid valve (110) and a lifting control valve (111) for controlling a lifting speed; The PLC (7) is also configured to control the lifting control valve (111) and the lifting solenoid valve (110) according to a first speed matching the pretreatment drying process, so that the lifting and drying arm mechanism (1) lifts the semiconductor wafer (2) out of the cleaning process water tank (3).

7. A method for controlling wafer drying, characterized in that: include: When it is determined that the semiconductor wafer (2) clamped by the wafer clamping arm (6) has completely entered the drying tunnel of the wafer drying equipment (4), the clean air knife (402) of the wafer drying equipment (4) is controlled to open the air nozzle so that the drying gas passes through the slit to dry the semiconductor wafer (2) in the drying tunnel, and the mechanical arm (5) is controlled to lift the wafer clamping arm (6); When it is determined that all the semiconductor wafers (2) have been lifted out of the drying tunnel, controlling the clean air knife (402) to stop spraying; The method further comprises: when it is determined that all semiconductor wafers (2) clamped by the wafer clamping arm (6) have entered the drying tunnel, placing the valve of the negative pressure regulating valve connecting the wafer drying equipment and the exhaust equipment in a first gear position, so that the surfaces of the semiconductor wafer (2) and the wafer clamping arm (6) are dried by negative pressure laminar flow; and, when it is determined that all semiconductor wafers (2) have been lifted out of the drying tunnel, placing the valve in a second gear position, so that the wafer drying equipment (4) remains clean, wherein the flow rate corresponding to the first gear position is greater than the flow rate corresponding to the second gear position.

8. The method according to claim 7, characterized in that Also includes: According to a first speed matching the pretreatment drying process, the lifting control valve (111) and the lifting solenoid valve (110) are controlled so that the lifting and drying arm mechanism (1) lifts the semiconductor wafer (2) out of the cleaning process water tank (3).

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