Three-dimensional stacked ultraviolet-infrared double-color area array detection chip

Abstract

The invention relates to a three-dimensional stacked ultraviolet-infrared double-color area array detection chip, which comprises an ultraviolet detection layer, a substrate, an infrared detection layer, filling glue and a reading circuit, and is characterized in that the ultraviolet detection layer and the infrared detection layer are of planar structures; the ultraviolet detection layer is prepared on the back surface of the infrared detection layer, and the substrate is arranged between the ultraviolet detection layer and the infrared detection layer; each pixel unit of the infrared detection chip is in one-to-one correspondence with each pixel unit of the ultraviolet detection chip, and signals of each ultraviolet photosensitive element and each infrared photosensitive element are independently output to a reading circuit on one side of the infrared detection layer. The problems that an existing ultraviolet-infrared two-color integrated detector is not effectively arrayed, and the performance of an infrared detection part is weak are solved, and the difficulty that high-quality materials are difficult to obtain due to direct laminated growth of photosensitive materials with different wave bands is overcome.

Description

Technical Field

[0001] The invention relates to the technical field of ultraviolet detection and infrared detection, and in particular to a three-dimensionally stacked ultraviolet-infrared dual-color area array detection chip. Background Art

[0002] Infrared detection technology has been widely used in many fields such as communications, environment, astronomy, and aviation detection, especially in the field of national defense. However, due to the complexity of the actual application environment and the rapid development of infrared jamming technology, the detection accuracy requirements for detectors are getting higher and higher. Integrating infrared detection and ultraviolet detection can process dual-band radiation information, effectively suppress the impact of background complexity on the detector, improve the system's anti-interference ability and target recognition ability, and reduce the false alarm rate in early warning, search and tracking systems. Infrared-ultraviolet dual-color integrated detectors have become one of the main development directions in the field of detectors.

[0003] The realization of ultraviolet-infrared dual-color integrated detectors has problems such as lattice mismatch of photosensitive materials in different bands, difficulty in directly stacking and growing high-quality photosensitive materials, and weak performance of the infrared detection system after integration. Existing monolithic integrated ultraviolet-infrared dual-color detectors are mostly unit devices. Most ultraviolet detection is based on wide-bandgap semiconductors, while infrared detection is realized by low-dimensional materials such as quantum dots, quantum wells, superlattices, and narrow-bandgap two-dimensional materials (such as graphene). Conventional infrared photosensitive materials are not used, thus avoiding the lattice mismatch problem of ultraviolet and infrared photosensitive materials. However, quantum well and superlattice materials have high process requirements and are difficult to obtain high-quality materials with few defects. The stacking mode, structural characteristics and preparation process of two-dimensional materials such as graphene are closely related, making it difficult to control the quality of the device, and the infrared light absorption rate is low. The infrared response is poor at room temperature, and it is difficult to achieve large-scale arraying. The currently reported UV-IR dual-color focal plane array detector structure is a vertical integration of a Pt / CdS UV detection system and an InSb infrared focal plane detection system, which only covers the mid-infrared band and has not yet considered signal output ([1] Li Qing, Bai Jie, Lv Yanqiu, et al. Dual-color detection mechanism based on Pt / CdS and InSb photovoltaic UV-IR focal plane detectors (English) [J]. Journal of Infrared and Millimeter Waves, 2017, 36(04): 385-388.). In addition, for large-scale array detection chips, how to improve the solder connection rate between the chip and the readout circuit has always been a major challenge.

[0004] Therefore, the UV-infrared dual-color detectors reported so far are mostly unit devices without effective arraying, and have problems such as high process difficulty and weak performance of the infrared detection system after integration. Summary of the invention

[0005] The purpose of the present invention is to provide a three-dimensional stacked ultraviolet-infrared two-color area array detection chip, which solves the problem that the existing ultraviolet-infrared two-color integrated detectors are not effectively arrayed and the performance of the infrared detection part is weak, and overcomes the difficulty of obtaining high-quality materials by directly stacking photosensitive materials of different bands.

[0006] To achieve the above object, the technical solution of the present invention is:

[0007] A three-dimensional stacked ultraviolet-infrared dual-color array detection chip, comprising an ultraviolet detection layer, a substrate, an infrared detection layer, a filling glue and a readout circuit, wherein the ultraviolet detection layer and the infrared detection layer are both planar structures;

[0008] The ultraviolet detection layer is prepared on the back of the infrared detection layer, and a substrate is arranged between the ultraviolet detection layer and the infrared detection layer; each pixel unit of the infrared detection chip corresponds one-to-one to each pixel unit of the ultraviolet detection chip, and each ultraviolet photosensitive element and infrared photosensitive element signal is independently output to the readout circuit on one side of the infrared detection layer.

[0009] The common substrate between the ultraviolet detection layer and the infrared detection layer is a silicon crystal material. The infrared detection layer and the ultraviolet detection layer are arranged back to back on two opposite surfaces of the substrate. The infrared detection layer is arranged on one side of the substrate with a back-illuminated structure, and the ultraviolet detection layer is integrated into the other side of the substrate. The ultraviolet signal and the infrared signal are simultaneously output to one side of the infrared detection layer, and the readout circuit and the infrared detection layer are fixed by filling glue.

[0010] The infrared detection layer includes a plurality of infrared detection photosensitive elements and an infrared common electrode of the infrared detection layer. Each infrared detection photosensitive element is composed of an infrared unit electrode, an n-type mercury cadmium telluride, and a p-type mercury cadmium telluride region; the infrared common electrode is located in the p-type mercury cadmium telluride region.

[0011] The ultraviolet detection layer includes a plurality of ultraviolet detection photosensitive elements and an ultraviolet common electrode of the ultraviolet detection layer. Each ultraviolet detection photosensitive element is composed of an ultraviolet unit electrode, a p-type gallium oxide, and an n-type gallium oxide region; the ultraviolet common electrode is located in the n-type gallium oxide region.

[0012] The infrared detection layer and the ultraviolet detection layer are prepared with metal electrodes by opening holes, and the metal electrodes include ultraviolet unit electrodes, ultraviolet common electrodes, infrared unit electrodes and infrared common electrodes; each infrared photosensitive element and ultraviolet photosensitive element is directly and independently connected to the readout circuit on one side of the infrared detection layer to realize one-to-one signal output of the infrared photosensitive element and the ultraviolet photosensitive element.

[0013] The ultraviolet unit electrode is connected to the p-type gallium oxide region and the readout circuit, and the ultraviolet unit electrode is isolated from the infrared detection layer by a first insulating layer; the ultraviolet common electrode is connected to the n-type gallium oxide region and the readout circuit, and the ultraviolet common electrode is isolated from the infrared detection layer by a second insulating layer.

[0014] The infrared unit electrode is connected to the n-type mercury cadmium telluride region and the readout circuit, and the infrared unit electrode and the p-type mercury cadmium telluride region are isolated by the third insulating layer; the infrared common electrode is connected to the p-type mercury cadmium telluride region and the readout circuit.

[0015] The p-type gallium oxide region of the ultraviolet detection layer and the n-type mercury cadmium telluride region of the infrared detection layer are staggered on both sides of the substrate and correspond one to one at the metal electrode openings. The area of ​​the p-type gallium oxide region of the corresponding single ultraviolet detection photosensitive element is the same as the area of ​​the n-type mercury cadmium telluride region of the single infrared detection photosensitive element.

[0016] The central dislocations of the p-type gallium oxide region and the n-type HgCdTe region have the same diameter as that of the n-type HgCdTe region.

[0017] The infrared detection layer is a back-illuminated infrared detector, and its light absorption material is mercury cadmium telluride. The thickness of mercury cadmium telluride is 1-15μm. The area of ​​the n-type mercury cadmium telluride region of a single infrared photosensitive element is adapted to the center spacing of the photosensitive element. The diameter of the n-type mercury cadmium telluride region is 15-50μm. The thickness of the silicon crystal material of the substrate is 5-20μm.

[0018] The ultraviolet detection layer is a front-irradiated ultraviolet detector, and its light absorption material is gallium oxide. The thickness of gallium oxide is 30-500nm, and the diameter of the p-type gallium oxide region of a single ultraviolet photosensitive element is 15-50μm.

[0019] The advantages of the present invention are: 1. A relatively independent structure is adopted to integrate an ultraviolet detector on the back of a back-illuminated mercury cadmium telluride infrared detector, and the ultraviolet detection layer and the infrared detection are respectively prepared on both sides of the substrate, thereby reducing the difficulty of material growth; 2. The photoelectric signal is directly output to the readout circuit in combination with the ring hole technology, thereby avoiding the reverse soldering process; 3. The ring hole process is utilized to realize one-to-one independent output of ultraviolet and infrared photosensitive elements to the readout circuit on the same side, thereby realizing high integration of ultraviolet / infrared detectors; 4. Gallium oxide is used as the ultraviolet photosensitive material, and high-quality thin films can be grown at a relatively low temperature, and still have good ultraviolet detection performance at low temperatures, which is compatible with the low preparation temperature and low operating temperature of the mercury cadmium telluride infrared detector, so that the system can work at low temperatures, thereby avoiding a sharp drop in the performance of the infrared detection module at room temperature after integration. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a cross-sectional schematic diagram of the present invention;

[0021] Figure 2 It is a top view schematic diagram of the present invention

[0022] In the figure: 1-ultraviolet detection layer; 101-ultraviolet unit electrode; 102-p-type gallium oxide; 103-n-type gallium oxide; 104-ultraviolet common electrode; 2-substrate; 3-infrared detection layer; 301-infrared unit electrode; 302-n-type mercury cadmium telluride; 303-p-type mercury cadmium telluride; 304-infrared common electrode; 4-filling glue; 5-readout circuit; 6-first insulating layer; 7-second insulating layer; 8-third insulating layer; 9-unit electrode opening; 10-ultraviolet common electrode opening; 11-infrared common electrode opening. DETAILED DESCRIPTION

[0023] The present invention is further described below in conjunction with the accompanying drawings, which are only used for exemplary description and cannot be understood as limiting the present invention.

[0024] In order to more concisely describe the present embodiment, some parts known to those skilled in the art but not related to the main content of the present invention are omitted in the drawings or descriptions. In addition, for the convenience of description, some parts in the drawings are omitted, enlarged or reduced, but they do not represent the size or entire structure of the actual product.

[0025] The present invention discloses a three-dimensional stacked ultraviolet-infrared dual-color array detection chip, such as Figure 1-2 As shown, it includes an ultraviolet detection layer 1, a substrate 2, an infrared detection layer 3, a filling glue 4 and a readout circuit 5. The ultraviolet detection layer 1 and the infrared detection layer 3 are both planar structures, and the infrared detection layer 3 back-illuminates the infrared detector.

[0026] The planar structured ultraviolet detection layer 1 is prepared on the back side of the back-illuminated planar structured infrared detection layer 3, and a substrate 2 is arranged between the ultraviolet detection layer 1 and the infrared detection layer 3, and the substrate 2 is a silicon crystal material.

[0027] The infrared detection layer 3 and the ultraviolet detection layer 1 are arranged back to back on two opposite surfaces of the substrate 2. The infrared detection layer 3 is arranged on one side of the substrate 2 with a back-illuminated structure, and the ultraviolet detection layer 1 is integrated into the other side of the substrate 2. The ultraviolet signal and the infrared signal are simultaneously output to one side of the infrared detection layer 3, and the readout circuit 5 and the infrared detection layer 3 are connected and fixed by filling glue 4.

[0028] Each pixel unit of the infrared detection chip 3 corresponds to each pixel unit of the ultraviolet detection chip 1 one by one, and each ultraviolet light sensitive element and infrared light sensitive element signal is independently output to the readout circuit 5 on one side of the infrared detection layer.

[0029] The ultraviolet-infrared dual-color light is incident on one side of the ultraviolet detection layer 1, wherein the ultraviolet light with a shorter wavelength is absorbed by the ultraviolet detection layer 1 and converted into an electrical signal output, while the infrared light with a longer wavelength penetrates the ultraviolet detection layer 1, and then penetrates the thinned silicon crystal material substrate 2, reaches the infrared detection layer 3, is absorbed and converted into an electrical signal output, and each ultraviolet detection photosensitive element corresponds to an infrared detection photosensitive element, and the ultraviolet and infrared signals of the target object are obtained at the same time.

[0030] The infrared detection layer 3 includes a plurality of infrared detection photosensitive elements and an infrared common electrode 304 of the infrared detection layer 3. Each infrared detection photosensitive element is composed of an infrared unit electrode 301, an n-type HgCdTe 302, and a p-type HgCdTe 303 region. The infrared common electrode 304 is located in the p-type HgCdTe 303 region.

[0031] The ultraviolet detection layer 1 includes a plurality of ultraviolet detection photosensitive elements and an ultraviolet common electrode 104 of the ultraviolet detection layer 1 . Each ultraviolet detection photosensitive element is composed of an ultraviolet unit electrode 101 , a p-type gallium oxide 102 , and an n-type gallium oxide 103 region; the ultraviolet common electrode 104 is located in the n-type gallium oxide 103 region.

[0032] The infrared detection layer 3 and the ultraviolet detection layer 1 are prepared with metal electrodes by opening holes, and the metal electrodes include an ultraviolet unit electrode 101, an ultraviolet common electrode 104, an infrared unit electrode 301 and an infrared common electrode 304; each infrared photosensitive element and ultraviolet photosensitive element is directly and independently connected to the readout circuit 5 on one side of the infrared detection layer 3, so as to realize one-to-one signal output of the infrared photosensitive element and the ultraviolet photosensitive element.

[0033] The ultraviolet unit electrode 101 connects the p-type gallium oxide 102 region and the readout circuit 5, and the ultraviolet unit electrode 101 is isolated from the infrared detection layer 3 by the first insulating layer 6; the ultraviolet common electrode 104 connects the n-type gallium oxide 102 region and the readout circuit 5, and the ultraviolet common electrode 104 is isolated from the infrared detection layer 3 by the second insulating layer 7.

[0034] The infrared unit electrode 301 connects the n-type HgCdTe 302 region and the readout circuit 5 , and the infrared unit electrode 301 and the p-type HgCdTe 303 region are isolated by the third insulating layer 8 ; the infrared common electrode 304 connects the p-type HgCdTe 303 region and the readout circuit 5 .

[0035] The first insulating layer 6, the second insulating layer 7 and the third insulating layer 8 are all made of zinc sulfide, and the side wall thickness is 500nm; the side wall thickness of the ultraviolet unit electrode 101 is 7μm, connecting the p-type gallium oxide 102 and the ultraviolet pixel corresponding to the readout circuit 5; the side wall thickness of the ultraviolet common electrode 104 is 50μm, connecting the n-type gallium oxide 103 and the ultraviolet pixel corresponding to the readout circuit 5; the side wall thickness of the infrared unit electrode 301 is 7μm, connecting the n-type mercury cadmium telluride 302 and the infrared pixel corresponding to the readout circuit; the side wall thickness of the infrared common electrode 304 is 50μm, connecting the p-type mercury cadmium telluride 303 and the infrared pixel corresponding to the readout circuit 5.

[0036] like Figure 1 As shown, the p-type gallium oxide 102 region of the ultraviolet detection layer 1 and the n-type mercury cadmium telluride 302 region of the infrared detection layer 3 are staggered on both sides of the substrate 2 and correspond one to one at the metal electrode openings, and the area of ​​the p-type gallium oxide 102 region of the corresponding single ultraviolet detection photosensitive element is the same as the area of ​​the n-type mercury cadmium telluride 302 region of the single infrared detection photosensitive element.

[0037] like Figure 2 As shown, a plurality of unit electrode openings 9 are provided on the ultraviolet detection layer 1, the size of the openings matches the size of the designed photosensitive element, and the position of the openings corresponds to the p-type gallium oxide 102 region; in addition, an ultraviolet common electrode opening 10 and an infrared common electrode opening 11 are provided in the n-type gallium oxide 103 region.

[0038] The central dislocation of the p-type gallium oxide 102 region and the n-type mercury cadmium telluride 302 region is the same as the diameter of the n-type mercury cadmium telluride 302 region, ensuring that the p-type gallium oxide 102 is exposed on one side after the hole is opened, and the n-type mercury cadmium telluride 302 is exposed on the other side; an ultraviolet unit electrode 101 is prepared on one side of the hole to connect the p-type gallium oxide 102 region with the readout circuit 5, and an infrared unit electrode 301 is prepared on the other side of the hole to connect the n-type mercury cadmium telluride 302 region with the readout circuit 5, thereby realizing one-to-one independent output of infrared photosensitive element and ultraviolet photosensitive element signals.

[0039] The area of ​​the n-type mercury cadmium telluride 302 region of a single infrared photosensitive element and the area of ​​the p-type gallium oxide 102 region of a single ultraviolet photosensitive element depend on the designed photosensitive element center spacing, as shown in the following table:

[0040]

[0041] Furthermore, the infrared detection layer 3 is a back-illuminated infrared detector, and its light absorption material is mercury cadmium telluride, the thickness of mercury cadmium telluride is 1-15μm, and the area of ​​the n-type mercury cadmium telluride 302 region of a single infrared photosensitive element depends on the designed center spacing of the photosensitive elements and changes with the change of the center spacing of the photosensitive elements. The diameter of the n-type mercury cadmium telluride 302 region is 15-50μm; the thickness of the silicon crystal material of the substrate 2 is 5-20μm.

[0042] Preferably, a buffer epilayer is grown on a substrate 2 of silicon crystal material, and then p-type mercury cadmium telluride 303 is epitaxially grown as an infrared photosensitivity layer, and a barrier layer is continuously grown, and an n-type mercury cadmium telluride 302 region of each infrared photosensitivity element is formed by photolithography, etching and ion implantation, and the surface of the mercury cadmium telluride is passivated.

[0043] The buffer layer is cadmium telluride with a thickness of 5 μm; the p-type mercury cadmium telluride 303 has a thickness of 7.5 μm; the barrier layer is zinc sulfide with a thickness of 73 nm, and is etched with hydrochloric acid; the diameter of the infrared detection photosensitive element n-type mercury cadmium telluride 302 area is 30 μm, and the center spacing of the n-type mercury cadmium telluride 302 area is 50 μm; the passivation layer is zinc sulfide with a thickness of 200 nm.

[0044] The readout circuit 5 is bonded to the front side of the infrared detection layer 3 by a filling glue 4; the pixel units of the readout circuit 5 correspond one to one with the infrared detection photosensitive elements and the ultraviolet detection photosensitive elements; the substrate 2 of the silicon crystal material is thinned to 5 μm.

[0045] The ultraviolet detection layer 1 is a front-illuminated ultraviolet detector, and its light absorption material is gallium oxide. The thickness of gallium oxide is 30-500nm, and the diameter of the p-type gallium oxide 102 area of ​​a single ultraviolet photosensitive element is 15-50μm.

[0046] Preferably, after growing a buffer layer on the thinned silicon crystal material substrate 2, an n-type gallium oxide 103 is grown as a violet light-sensitive layer, and a p-type mercury cadmium telluride 102 region of each ultraviolet light-sensitive element is formed by photolithography and ion implantation.

[0047] The buffer layer is silicon oxide with a thickness of 400nm; the thickness of the n-type gallium oxide 103 is 300nm and the growth temperature is 100°C; the diameter of the p-type gallium oxide 102 region of the ultraviolet detection photosensitive element is 30μm, the center spacing of the p-type gallium oxide 102 region is 50μm, and the p-type gallium oxide 102 region is displaced by 20μm with the center of the n-type mercury cadmium telluride 302 region of the above-mentioned infrared detection photosensitive element.

[0048] like Figure 1 As shown, the unit electrode opening 9 has a diameter of 20 μm, a center spacing of 50 μm, and the center position of the opening is located at the boundary of the ultraviolet detection photosensitive element p-type gallium oxide 102 area; the opening diameter of the ultraviolet common electrode opening 10 and the infrared common electrode opening 11 is 100 μm, located in the n-type gallium oxide 103 area of ​​the ultraviolet detection layer 1; all the openings sequentially penetrate the ultraviolet detection layer 1, the substrate 2, the infrared detection layer 3, the filling glue 4, and end at the readout circuit 5. The aforementioned openings are realized by photolithography, etching, and corrosion processes.

[0049] The above description is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. That is, any equivalent changes and modifications made according to the content of the patent application scope of the present invention should be within the technical scope of the present invention.

Claims

1. A three-dimensional stacked ultraviolet-infrared dual-color array detection chip, comprising an ultraviolet detection layer (1), a substrate (2), an infrared detection layer (3), a filling glue (4) and a readout circuit (5), wherein the ultraviolet detection layer (1) and the infrared detection layer (3) are both planar structures; characterized in that: The ultraviolet detection layer (1) is prepared on the back side of the infrared detection layer (3), and a substrate (2) is arranged between the ultraviolet detection layer (1) and the infrared detection layer (3); each pixel unit of the infrared detection chip (3) corresponds to each pixel unit of the ultraviolet detection chip (1) one by one, and each ultraviolet light sensitive element and infrared light sensitive element signal is independently output to a readout circuit (5) on one side of the infrared detection layer.

2. The three-dimensional stacked ultraviolet-infrared dual-color area array detection chip according to claim 1, characterized in that: The substrate (2) shared by the ultraviolet detection layer (1) and the infrared detection layer (3) is made of silicon crystal material; the infrared detection layer (3) and the ultraviolet detection layer (1) are arranged back to back on two opposite surfaces of the substrate (2); the infrared detection layer (3) is arranged on one side of the substrate (2) using a back-illuminated structure, and the ultraviolet detection layer (1) is integrated into the other side of the substrate (2); the ultraviolet signal and the infrared signal are simultaneously output to one side of the infrared detection layer (3); and the readout circuit (5) and the infrared detection layer (3) are fixed by means of a filling glue (4).

3. The three-dimensional stacked ultraviolet-infrared dual-color area array detection chip according to claim 2, characterized in that: The infrared detection layer (3) comprises a plurality of infrared detection photosensitive elements and an infrared common electrode (304) of the infrared detection layer (3), each infrared detection photosensitive element being composed of an infrared unit electrode (301), an n-type mercury cadmium telluride (302), and a p-type mercury cadmium telluride (303) region; the infrared common electrode (304) is located in the p-type mercury cadmium telluride (303) region. The ultraviolet detection layer (1) comprises a plurality of ultraviolet detection photosensitive elements and an ultraviolet common electrode (104) of the ultraviolet detection layer (1), each ultraviolet detection photosensitive element being composed of an ultraviolet unit electrode (101), a p-type gallium oxide (102), and an n-type gallium oxide (103) region; the ultraviolet common electrode (104) is located in the n-type gallium oxide (103) region.

4. The three-dimensional stacked ultraviolet-infrared dual-color area array detection chip according to claim 3, characterized in that: The infrared detection layer (3) and the ultraviolet detection layer (1) are formed into metal electrodes by opening holes, and the metal electrodes include an ultraviolet unit electrode (101), an ultraviolet common electrode (104), an infrared unit electrode (301) and an infrared common electrode (304); each infrared photosensitive element and ultraviolet photosensitive element is directly and independently connected to a readout circuit (5) on one side of the infrared detection layer (3), so as to realize one-to-one signal output of the infrared photosensitive element and the ultraviolet photosensitive element.

5. The three-dimensional stacked ultraviolet-infrared dual-color area array detection chip according to claim 4, characterized in that: The ultraviolet unit electrode (101) is connected to the p-type gallium oxide (102) region and the readout circuit (5), and the ultraviolet unit electrode (101) and the infrared detection layer (3) are isolated by a first insulating layer (6); the ultraviolet common electrode (104) is connected to the n-type gallium oxide (102) region and the readout circuit (5), and the ultraviolet common electrode (104) and the infrared detection layer (3) are isolated by a second insulating layer (7); The infrared unit electrode (301) is connected to the n-type mercury cadmium telluride (302) region and the readout circuit (5), and the infrared unit electrode (301) and the p-type mercury cadmium telluride (303) region are isolated by a third insulating layer (8); the infrared common electrode (304) is connected to the p-type mercury cadmium telluride (303) region and the readout circuit (5).

6. The three-dimensional stacked ultraviolet-infrared dual-color area array detection chip according to claim 4, characterized in that: The p-type gallium oxide (102) region of the ultraviolet detection layer (1) and the n-type mercury cadmium telluride (302) region of the infrared detection layer (3) are staggered on two sides of the substrate (2) and correspond one to one at the metal electrode openings, and the area of ​​the p-type gallium oxide (102) region of the corresponding single ultraviolet detection photosensitive element is the same as the area of ​​the n-type mercury cadmium telluride (302) region of the single infrared detection photosensitive element.

7. The three-dimensional stacked ultraviolet-infrared dual-color area array detection chip according to claim 6, characterized in that: The central dislocations of the p-type gallium oxide (102) region and the n-type mercury cadmium telluride (302) region have the same diameter as the n-type mercury cadmium telluride (302) region.

8. The three-dimensional stacked ultraviolet-infrared dual-color area array detection chip according to claim 3, characterized in that: The infrared detection layer (3) is a back-illuminated infrared detector, whose light absorption material is mercury cadmium telluride, the thickness of the mercury cadmium telluride is 1-15 μm, the area of ​​the n-type mercury cadmium telluride (302) region of a single infrared photosensitive element is adapted to the center spacing of the photosensitive element, and the diameter of the n-type mercury cadmium telluride (302) region is 15-50 μm; the thickness of the silicon crystal material of the substrate (2) is 5-20 μm.

9. The three-dimensional stacked ultraviolet-infrared dual-color area array detection chip according to claim 3, characterized in that: The ultraviolet detection layer (1) is a front-illuminated ultraviolet detector, the light absorption material of which is gallium oxide, the thickness of the gallium oxide is 30-500nm, and the diameter of the p-type gallium oxide (102) region of a single ultraviolet light sensitive element is 15-50μm.

Images