Display panel and manufacturing method thereof

Abstract

The application provides a display panel and a manufacturing method thereof. The display panel comprises a substrate and a driving circuit layer. The driving circuit layer is arranged above the substrate. The driving circuit layer comprises at least one conductive layer. The conductive layer comprises a first conductive part and a second conductive part. The second conductive part is arranged on the upper surface of the first conductive part. In the etching process, the second conductive part can be etched from the side first, and the first conductive part can be etched from the gap of the second conductive part. Therefore, the profile of the conductive layer after etching can be controlled by adjusting the etching selection ratio of the first conductive part and the second conductive part. The type of etching liquid does not need to be changed, and the production equipment does not need to be increased. Therefore, the production cost of the display panel can be reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a display panel and a manufacturing method thereof. BACKGROUND

[0002] Currently, in order to reduce production cost, a wet etching process is generally used to etch a metal pattern, and the key of this process is to finely control the chemical components of the etching liquid to realize the customization of the profile of the metal pattern after etching. This method not only takes a long time, but also has a relatively high difficulty in technical implementation.

[0003] In the manufacturing of a display panel, the metal patterns on different functional film layers have different profile requirements. Specifically, the light shielding layer tends to adopt a low slope angle profile design, aiming to prevent the subsequent film layer from being broken in the slope angle area, so as to ensure the structural stability. On the contrary, the source-drain electrode layer requires a high slope angle profile, so as to reduce the line width and the area occupied by the metal pattern, thereby improving the resolution of the display panel and optimizing the display effect. In order to meet these diversified profile requirements, the traditional method often needs to frequently change the type of etching liquid, which undoubtedly increases the cost of material procurement, and at the same time puts forward more diversified requirements for the production equipment, increases the burden of equipment investment and maintenance, and leads to a substantial increase in the production cost of the display panel.

[0004] Therefore, it is necessary to provide a display panel and a manufacturing method thereof to improve this defect. SUMMARY

[0005] Embodiments of the present application provide a display panel and a manufacturing method thereof, which can reduce production cost.

[0006] In order to achieve the above-mentioned purpose, according to a first aspect of the present application, a display panel is provided, comprising:

[0007] a substrate;

[0008] a driving circuit layer arranged above the substrate, the driving circuit layer comprising at least one conductive layer, the conductive layer comprising a first conductive part and a second conductive part, the first conductive part being arranged above the substrate, and the second conductive part being arranged on the upper surface of the first conductive part;

[0009] wherein the upper surface width of the first conductive part is smaller than the bottom surface width.

[0010] Optionally, the conductive layer comprises a light shielding layer, a source-drain electrode layer and a gate electrode layer, the gate electrode layer is arranged on the side of the light shielding layer away from the substrate, and the source-drain electrode layer is arranged on the side of the gate electrode layer away from the light shielding layer.

[0011] The first conductive part has a side surface and a bottom surface, and an angle between the side surface and the bottom surface is a slope angle. The slope angle of the first conductive part of the gate layer is greater than the slope angle of the first conductive part of the light shielding layer, the slope angle of the first conductive part of the source-drain layer is greater than the slope angle of the first conductive part of the light shielding layer, and the slope angle of the first conductive part of the gate layer is less than the slope angle of the first conductive part of the source-drain layer.

[0012] Optionally, the etching selection ratio of the second conductive part is greater than the etching selection ratio of the first conductive part.

[0013] Optionally, the greater the thickness of the second conductive part, the smaller the slope angle of the first conductive part.

[0014] Optionally, the side surface of the first conductive part is a concave surface.

[0015] Optionally, the material of the second conductive part includes a metal oxide or an alloy.

[0016] Optionally, the material of the second conductive part is a metal oxide or an alloy.

[0017] Optionally, the first conductive part has a first material, and the second conductive part has a second material and an alloy composed of an etching control element;

[0018] Optionally, the first material is a metal or an alloy, the second material is the same as the first material, and the etching control element includes at least one metal element.

[0019] Optionally, the atomic percentage of the etching control element in the second conductive part is greater than or equal to 5% and less than or equal to 50%.

[0020] Optionally, the first material is selected from one or a combination of copper, aluminum, molybdenum, titanium, and silver, and the etching control element is selected from one or a combination of molybdenum, manganese, magnesium, aluminum, tungsten, titanium, and zinc.

[0021] According to a second aspect of the present application, a manufacturing method of a display panel is provided for manufacturing the display panel as described above, and the manufacturing method of the display panel includes the following steps:

[0022] forming a first conductive material layer above a substrate;

[0023] forming a second conductive material layer on the upper surface of the first conductive material layer, and the etching selection ratio of the second conductive material layer is greater than the etching selection ratio of the first conductive material layer;

[0024] etching the first conductive material layer and the second conductive material layer to form a first conductive part and a second conductive part, and the upper surface width of the first conductive part is less than the bottom surface width.

[0025] The embodiments of the present application provide a display panel and a manufacturing method of the display panel. The display panel comprises a substrate and a driving circuit layer. The driving circuit layer is arranged above the substrate. The driving circuit layer comprises at least one conductive layer. The conductive layer comprises a first conductive part and a second conductive part. The second conductive part is arranged on the upper surface of the first conductive part. In the etching process, the second conductive part can be etched from the side first, and the first conductive part can be etched from the gap of the second conductive part, so that the width of the upper surface of the first conductive part is smaller than the bottom surface. Therefore, the profile of the conductive layer after etching can be controlled by adjusting the etching selectivity ratio of the first conductive part and the second conductive part. The type of etching liquid does not need to be changed, and the production equipment does not need to be increased. Therefore, the production cost of the display panel can be reduced. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1 A schematic diagram of a film layer structure of a display panel provided by the embodiments of the present application is shown in the figure;

[0027] Figure 2 A schematic diagram of another structure of a display panel provided by the embodiments of the present application is shown in the figure;

[0028] Figure 3 A schematic diagram of another structure of a display panel provided by the embodiments of the present application is shown in the figure;

[0029] Figure 4 A schematic diagram of another structure of a display panel provided by the embodiments of the present application is shown in the figure;

[0030] Figure 5 A schematic diagram of another structure of a display panel provided by the embodiments of the present application is shown in the figure;

[0031] Figure 6 A flow chart of a manufacturing method of a display panel provided by the embodiments of the present application is shown in the figure;

[0032] Figures 7a to 7d A schematic diagram of a manufacturing method of a display panel provided by the embodiments of the present application is shown in the figure;

[0033] Figure 8 A schematic diagram of a display device provided by the embodiments of the present application is shown in the figure. DETAILED DESCRIPTION

[0034] The following description of the embodiments is provided with reference to the attached drawings, which are used to illustrate specific embodiments in which the present application can be practiced. Directional terms as used in describing the present application, such as [up], [down], [front], [back], [left], [right], [inner], [outer], [lateral] and the like, are only used with reference to the attached drawings. Therefore, the directional terms are used to illustrate and understand the present application, but not to limit the present application. In the drawings, similar elements are denoted by the same reference numerals.

[0035] The application will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0036] Embodiments of the application provide a display panel, the display panel comprising a substrate and a drive circuit layer, the drive circuit layer being disposed above the substrate, the drive circuit layer comprising at least one conductive layer, the conductive layer comprising a first conductive part and a second conductive part, the second conductive part being disposed on an upper surface of the first conductive part, the upper surface of the first conductive part having a width smaller than a bottom surface.

[0037] In the embodiments of the application, in the etching process, the second conductive part can be preferentially etched away, and the first conductive part can be etched from the gap of the second conductive part, so that the width of the upper surface of the first conductive part is smaller than the width of the bottom surface, thereby the profile of the conductive layer after etching can be controlled by adjusting the etching selectivity of the first conductive part and the second conductive part, without changing the type of etching liquid, and without increasing the production equipment, thereby the production cost of the display panel can be reduced.

[0038] In conjunction with Figure 1 the drawings, Figure 1 The film layer structure schematic diagram of the display panel provided by the embodiments of the application is shown, the display panel comprising a substrate 1 and a drive circuit layer 2, the drive circuit layer 2 being disposed on the substrate 1. The drive circuit layer 2 comprises at least one conductive layer 21, the conductive layer 21 being disposed on the substrate 1. The conductive layer 21 comprises a first conductive part 211 and a second conductive part 212, the first conductive part 211 being disposed on the substrate 1, and the second conductive part 212 being disposed on an upper surface 211a of the first conductive part 211.

[0039] In the embodiments of the application, the etching selectivity of the second conductive part 212 is greater than the etching selectivity of the first conductive part 211, that is, in the same etching liquid, the etching rate of the second conductive part 212 is greater than the etching rate of the first conductive part 211. In the etching process, the second conductive part 212 can be preferentially etched away, and the first conductive part 211 can be etched from the gap of the second conductive part 212, so that the width of the upper surface 211a of the first conductive part 211 is smaller than the width of the bottom surface 211b, and thus the profile of the first conductive part 211 after etching can be controlled by adjusting the etching selectivity of the second conductive part 212, without changing the type of etching liquid, and without increasing the production equipment, thereby the production cost of the display panel can be reduced.

[0040] In some embodiments, the material of the second conductive part 212 includes a metal oxide or an alloy. The metal oxide or the alloy material not only has conductivity, but also has good chemical stability, thermal stability, and good interface compatibility with the first conductive part 211. On the one hand, the metal oxide or the alloy material can play a role in regulating the profile of the first conductive part 211 after etching. On the other hand, the metal oxide or the alloy material can also play a role in protecting the first conductive part 211, which can effectively isolate the first conductive part 211 from direct contact with the external environment, prevent the first conductive part 211 from being oxidized or corroded, and thus can maintain good conductivity of the conductive layer 21.

[0041] In some embodiments, the material of the second conductive part 212 includes a metal oxide, and the metal oxide is selected from any one of titanium oxide, zinc oxide, tin oxide, and indium oxide.

[0042] In some embodiments, the first conductive part 211 has a first material, and the second conductive part 212 has a second material and an alloy composed of an etching regulation element. The first material is a metal or an alloy, the second material is the same as the first material, and the etching regulation element is different from the second material. That is, the material of the second conductive part 212 is an alloy material of the first material of the first conductive part 211 and the etching regulation element.

[0043] In some embodiments, the first material is selected from any one or a combination of multiple of copper, aluminum, molybdenum, titanium, and silver, the second material is the same as the first material, and the etching regulation element is selected from one or a combination of multiple of molybdenum, manganese, magnesium, aluminum, tungsten, titanium, and zinc.

[0044] In some embodiments, the atomic percentage of the etching regulation element in the second conductive part is greater than or equal to 5% and less than or equal to 50%. For example, the atomic percentage of the etching regulation element in the second conductive part is 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, or 50%, etc.

[0045] In the embodiments of the present application, the etching selectivity ratio of the second conductive part 212 can be controlled by controlling the atomic percentage of the etching regulation element in the second conductive part 212, so as to regulate the profile of the first conductive part 211 after etching. The smaller the atomic percentage of the etching regulation element in the second conductive part 212, the greater the etching selectivity ratio of the second conductive part 212, the greater the etching rate of the second conductive part 212, and the smaller the slope angle formed by the first conductive part 211 after etching. The greater the atomic percentage of the etching regulation element in the second conductive part 212, the smaller the etching selectivity ratio of the second conductive part 212, the smaller the etching rate of the second conductive part 212, and the greater the slope angle formed by the first conductive part 211 after etching.

[0046] If the atomic percentage of the etching regulation element in the second conductive part 212 is too small, the etching rate of the second conductive part 212 will be too fast, which is not conducive to regulating the profile of the first conductive part 211 after etching. If the atomic percentage of the etching regulation element in the second conductive part 212 is too large, the etching rate of the first conductive part 211 and the second conductive part 212 will be too small, which will result in that the regulation of the profile of the first conductive part 211 after etching is not obvious. Therefore, limiting the atomic percentage of the etching regulation element in the second conductive part 212 to 5% to 50% is conducive to regulating the profile of the first conductive part 211 after etching.

[0047] In some embodiments, referring to Figure 1 , the thickness of the second conductive part 212 is greater than or equal to 200 angstroms and less than or equal to 5000 angstroms. For example, the thickness of the second conductive part 212 is 200 angstroms, 600 angstroms, 1000 angstroms, 2000 angstroms, 3000 angstroms, 4000 angstroms, or 5000 angstroms, etc. When the thickness of the second conductive part 212 is less than 200 angstroms, the coverage effect on the first conductive part 211 is limited due to the small thickness of the second conductive part 212, which cannot regulate the profile of the first conductive part 211 after etching. When the thickness of the second conductive part 212 is greater than 5000 angstroms, the etching of the first conductive part 211 will be excessive due to the large thickness of the second conductive part 212. Therefore, limiting the thickness of the second conductive part 212 to 200 to 5000 angstroms is conducive to regulating the profile of the first conductive part 211 after etching.

[0048] In some embodiments, the thickness of the first conductive part 211 is greater than or equal to 2000 angstroms and less than or equal to 10000 angstroms. For example, the thickness of the first conductive part 211 is 2000 angstroms, 4000 angstroms, 6000 angstroms, 8000 angstroms, or 10000 angstroms, etc.

[0049] In some embodiments, the greater the thickness of the second conductive part 212, the smaller the slope angle of the first conductive part 211; the greater the thickness of the second conductive part 212, the greater the slope angle of the first conductive part 211. It should be noted that when the thickness of the second conductive part 212 is large, the etching time of the second conductive part 212 will increase under the condition that the etching rate is constant, which will result in that the etching time of the first conductive part 211 will also increase, the more the etched part of the first conductive part 211, the smaller the slope angle of the first conductive part 211; on the contrary, when the thickness of the second conductive part 212 is small, the etching time of the second conductive part 212 will decrease under the condition that the etching rate is constant, which will result in that the etching time of the first conductive part 211 will also decrease, the less the etched part of the first conductive part 211, the greater the slope angle of the first conductive part 211.

[0050] In some embodiments, the side surface 211c of the first conductive part is a concave surface.

[0051] Referring to Figure 1 , the side surface 211c of the first conductive part is recessed from the outside to the inside of the second conductive part 212, the upper surface 211a of the first conductive part is covered by the second conductive part 212, the etching degree of the first conductive part gradually increases from the end close to the second conductive part 212 to the end away from the second conductive part 212, and the etching of the first conductive part 211 is non-linear because the first conductive part 211 is etched in the gap formed by the etching of the second conductive part 212, so that the side surface 211c of the first conductive part finally forms a concave surface recessed inward.

[0052] In some embodiments, referring to Figure 1 , the conductive layer 21 further includes a third conductive part 213, the third conductive part 213 is arranged at the bottom of the first conductive part 211, that is, the conductive layer 21 is a three-layer conductive structure, the third conductive part 213, the first conductive part 211 and the second conductive part 212 are sequentially stacked on the substrate 1. By arranging the third conductive part 213 at the first part of the first conductive part 211, the adhesion of the conductive layer 21 to the substrate 1 or the film layer close to the substrate 1 can be improved.

[0053] In some embodiments, the material of the third conductive part 213 is selected from one of titanium, molybdenum or titanium-molybdenum alloy.

[0054] In some embodiments, referring to Figure 2 , Figure 2 Another structural schematic diagram of a display panel provided by an embodiment of the present application, the driving circuit layer 2 further includes a light shielding layer 22, a gate layer 23 and a source-drain layer 24, the light shielding layer 22 is arranged on one side of the substrate 1, the gate layer 23 is arranged on the side of the light shielding layer 22 away from the substrate 1, the source-drain layer 24 is arranged on the side of the light shielding layer 22 away from the substrate 1, and the conductive layer 21 includes at least one of the light shielding layer 22, the gate layer 23 and the source-drain layer 24.

[0055] In some embodiments, referring to Figure 2 , the driving circuit layer 2 includes the light shielding layer 22, a barrier layer 25, an active layer 26, a gate insulating layer 27, the gate layer 23, an interlayer dielectric layer 28 and the source-drain layer 24 stacked on the substrate 1.

[0056] In some embodiments, the substrate 1 is a single-layer structure or a stacked structure formed by at least one of an organic material and an inorganic material, the organic material can be polyimide, and the inorganic material can be glass.

[0057] In some embodiments, the barrier layer 25 can be a single-layer structure or a stacked structure formed by at least one of silicon nitride, silicon oxide and silicon oxynitride.

[0058] In some embodiments, the material of the active layer 26 includes a silicon semiconductor material or a metal oxide semiconductor material, the silicon semiconductor material can be amorphous silicon or low-temperature polysilicon, and the oxide semiconductor material can be indium gallium zinc oxide.

[0059] In some embodiments, the gate insulating layer 27 and the interlayer dielectric layer 28 are respectively arranged on the corresponding metal layer or the active layer, so as to insulate and separate the different layers of metal layers or active layers. The gate insulating layer 27 and the interlayer dielectric layer 28 can be a single-layer structure or a stacked-layer structure formed by at least one of silicon nitride, silicon oxide and silicon oxynitride.

[0060] In some embodiments, the display panel can further include a light emitting device layer (not shown in the figure) arranged on the side of the driving circuit layer 2 away from the substrate 1. The light emitting device layer includes a plurality of light emitting devices, which are any one of light emitting diodes, organic light emitting diodes, mini light emitting diodes, micro light emitting diode chips and other light sources.

[0061] In some embodiments, the display panel can be a liquid crystal display panel, and the display panel can further include a counter substrate and a liquid crystal layer. The substrate 1 and the driving circuit layer 2 constitute an array substrate, the counter substrate is arranged on the side of the driving circuit layer away from the substrate 1, and the liquid crystal layer is arranged between the counter substrate and the array substrate.

[0062] In some embodiments, referring to Figure 2 , the conductive layer 21 includes the light shielding layer 22, and the light shielding layer 22 has a three-layer conductive structure, i.e., the light shielding layer 22 includes the third conductive part 213, the first conductive part 211 and the second conductive part 212 arranged on the side of the substrate 1 in a stacked manner. In this way, the light shielding layer 22 after etching has a lower slope angle, so that the risk of film layer formed on the light shielding layer 22 subsequently breaking can be reduced.

[0063] It should be noted that, referring to Figure 1 and Figure 2 , the angle a between the side surface 211c and the bottom surface 211b of the first conductive part 211 is the slope angle of the first conductive part 211.

[0064] In some embodiments, referring to Figure 2 , the gate layer 23 and the source-drain layer 24 are respectively arranged on the corresponding insulating layer or the interlayer dielectric layer, and the gate layer 23 and the source-drain layer 24 can be a single-layer structure formed by at least one of copper, molybdenum, titanium, aluminum and silver, or a stacked-layer structure formed by at least two of the above metal materials.

[0065] In some embodiments, referring to Figure 3 , Figure 3This is a schematic diagram of another display panel structure provided in an embodiment of this application. The conductive layer 21 includes a gate layer 23. The gate layer 23 has a three-layer conductive structure, namely, the gate layer 23 includes a third conductive portion 213, a first conductive portion 211 and a second conductive portion 212 stacked on one side of the substrate 1. This allows the etched gate layer 23 to have a higher slope angle and reduce the linewidth of the signal traces of the gate layer 23, thereby freeing up more space to place more sub-pixels, thereby increasing the resolution of the display panel.

[0066] In some embodiments, please refer to Figure 4 , Figure 4 This is a schematic diagram of another display panel structure provided in an embodiment of this application. The conductive layer 21 includes a source-drain layer 24. The source-drain layer 24 has a three-layer conductive structure, namely, the source-drain layer 24 includes a third conductive portion 213, a first conductive portion 211, and a second conductive portion 212 stacked on one side of the substrate 1. This allows the etched source-drain layer 24 to have a higher slope angle, reducing the linewidth of the signal traces in the source-drain layer 24, thereby freeing up more space to place more sub-pixels, which can increase the resolution of the display panel.

[0067] In some embodiments, the display panel may have multiple conductive layers, including a light-shielding layer 22, a gate layer 23, and a source-drain layer 24. This can reduce the risk of breakage of the film layer subsequently formed on the light-shielding layer 22, while reducing the linewidth of the signal traces in the gate layer 23 and the source-drain layer 24, thereby freeing up more space to place more sub-pixels and increasing the resolution of the display panel.

[0068] In some embodiments, please refer to Figure 5 , Figure 5 This is a schematic diagram of another display panel structure provided in an embodiment of this application. The conductive layer 21 includes a light-shielding layer 22, a gate layer 23, and a source-drain layer 24. That is, the light-shielding layer 22, the gate layer 23, and the source-drain layer 24 are all three-layer conductive structures formed by stacking a third conductive portion 213, a first conductive portion 211, and a second conductive portion 212. The slope angle of the first conductive portion 211 of the gate layer 23 is greater than the slope angle of the first conductive portion 211 of the light-shielding layer 22, the slope angle of the first conductive portion 211 of the source-drain layer 24 is greater than the slope angle of the first conductive portion 211 of the light-shielding layer 22, and the slope angle of the first conductive portion 211 of the gate layer 23 is smaller than the slope angle of the first conductive portion 211 of the source-drain layer 24.

[0069] It should be noted that, by setting the slope angle of the first conductive part 211 of the light shielding layer 22 to be the smallest, the flatness of the film layers such as the barrier layer 25, the gate insulating layer 27, and the interlayer dielectric layer 28 deposited on the light shielding layer 22 subsequently can be improved, and the cracks of the gate layer 23 and the source-drain electrode layer 24 deposited on the above film layers can be prevented. By making the slope angle of the first conductive part 211 of the gate layer 23 greater than the slope angle of the first conductive part 211 of the light shielding layer 22, and making the slope angle of the first conductive part 211 of the gate layer 23 smaller than the slope angle of the first conductive part 211 of the source-drain electrode layer 24, the first conductive part 211 of the gate layer 23 has a larger slope angle, and the first conductive part 211 of the source-drain electrode layer 24 has the largest slope angle. In this way, not only the line width of the signal lines in the gate layer 23 and the source-drain electrode layer 24 can be reduced, so as to increase the resolution of the display panel, but also the flatness of the interlayer dielectric layer 28 deposited on the gate layer 23 subsequently can be improved, and the risk of cracks of the source-drain electrode layer 24 formed subsequently can be reduced.

[0070] According to the display panel provided by the above-mentioned embodiments of the present application, the embodiments of the present application further provide a manufacturing method of a display panel, which is used to manufacture the display panel provided by any one of the above-mentioned embodiments. Please refer to Figure 6 、 Figures 7a to 7d , Figure 6 the flow chart of the manufacturing method of the display panel provided by the embodiments of the present application, Figures 7a to 7d the schematic diagram of the manufacturing method of the display panel provided by the embodiments of the present application, the manufacturing method of the display panel comprises the following steps:

[0071] Step S1, forming a first conductive material layer 2110 on the substrate 1.

[0072] Step S2, forming a second conductive material layer 2120 on the upper surface of the first conductive material layer 2110, the etching selection ratio of the second conductive material layer 2120 is greater than the etching selection ratio of the first conductive material layer 2110.

[0073] Step S3, etching the first conductive material layer 2110 and the second conductive material layer 2120 to form a first conductive part 211 and a second conductive part 212, the upper surface width of the first conductive part 211 is smaller than the bottom width.

[0074] Please refer to Figure 7a , step S1 comprises: forming a third conductive material layer 2130 on the substrate 1; forming the first conductive material layer 2110 on the upper surface of the third conductive material layer 2130.

[0075] In some embodiments, the material of the first conductive material layer 2110 is selected from one or a combination of copper, aluminum, molybdenum, titanium, and silver.

[0076] In some embodiments, the second conductive material layer 2120 has a second material and an alloy of etching control elements, the second material is the same as the material of the first conductive material layer 2110, and is selected from one or a combination of copper, aluminum, molybdenum, titanium and silver, and the etching control elements are selected from one or a combination of molybdenum, manganese, magnesium, aluminum, tungsten, titanium and zinc, so that the etching selectivity of the second conductive material layer 2120 is greater than that of the first conductive material layer 2110.

[0077] In some embodiments, the atomic percentage of the etching control elements in the second conductive material layer 2120 is greater than or equal to 5% and less than or equal to 50%.

[0078] In some embodiments, the material of the third conductive material layer 2130 is selected from one of titanium, molybdenum or a molybdenum-titanium alloy.

[0079] In some embodiments, referring to Figures 7b to 7d , the step S3 includes: forming a layer of photoresist on the upper surface of the second conductive material layer 2120, exposing and developing the photoresist to form a photoresist pattern 3; and performing wet etching treatment on the first conductive material layer 2110, the second conductive material layer 2120 and the third conductive material layer 2130 using the same etching solution to form the first conductive part 211, the second conductive part 212 and the third conductive part 213.

[0080] Referring to Figure 7c , since the etching selectivity of the second conductive material layer 2120 is greater than that of the first conductive material layer 2110, the second conductive material layer 2120 is preferentially side-etched. As shown in the left image of Figure 7c and the left image of Figure 7d , the greater the etching selectivity of the second conductive material layer 2120, the faster the etching rate of the second conductive material layer 2120, the smaller the width of the second conductive material layer 2120, and the smaller the slope angle of the first conductive material layer 2110; as shown in the right image of Figure 7c and the right image of Figure 7d , the smaller the etching selectivity of the second conductive material layer 2120, the slower the etching rate of the second conductive material layer 2120, the greater the width of the second conductive material layer 2120, and the greater the slope angle of the first conductive material layer 2110. Thus, by controlling the etching rate of the second conductive material layer 2120 to control the profile (i.e. the slope angle) of the first conductive material layer 2110 after etching, there is no need to replace the etching solution and the etching equipment, and therefore the production cost can be reduced.

[0081] It should be noted that the step of forming the conductive layer in the method of manufacturing the display panel provided by the embodiments of the present application can be used to prepare any metal layer in the display panel, such as the light shielding layer, the gate layer and the source-drain layer.

[0082] According to the display panel provided in the above embodiments of the present application, the embodiments of the present application further provide a display device, which is combined with Figure 8 as shown, Figure 8 A structural schematic diagram of the display device provided in the embodiments of the present application is shown in FIG. 10. The display device 1000 includes a display panel 100 and a housing 200. The display panel 100 is arranged on the housing 200. The display panel 100 can be any one of the display panels provided in the above embodiments. The display device provided in the present embodiment can achieve the same effects as the display panel provided in any one of the above embodiments, and thus will not be described here.

[0083] The embodiments of the present application have the following beneficial effects: The embodiments of the present application provide a display panel and a manufacturing method of the display panel. The display panel includes a substrate and a driving circuit layer. The driving circuit layer is arranged on the substrate. The driving circuit layer includes at least one conductive layer. The conductive layer includes a first conductive part and a second conductive part. The second conductive part is arranged on the upper surface of the first conductive part. The etching selectivity of the second conductive part is greater than that of the first conductive part. In the etching process, the second conductive part can be preferentially etched away, and the first conductive part can be etched from the gap of the second conductive part, so that the upper surface width of the first conductive part is less than the bottom width. Thus, the etching selectivity of the first conductive part and the second conductive part can be adjusted to adjust the profile of the conductive layer after etching. The type of etching liquid does not need to be changed, and the production equipment does not need to be increased. Thus, the production cost of the display panel can be reduced.

[0084] In conclusion, although the present application is disclosed with preferred embodiments as above, the above preferred embodiments are not used to limit the present application. Those skilled in the art can make various modifications and decorations without departing from the spirit and scope of the present application. Therefore, the protection scope of the present application is based on the scope defined by the claims.

Claims

1. A display panel, characterized in that, include: Substrate; A driving circuit layer is disposed above the substrate. The driving circuit layer includes at least one conductive layer. The conductive layer includes a first conductive portion and a second conductive portion. The first conductive portion is disposed above the substrate, and the second conductive portion is disposed on the upper surface of the first conductive portion. Wherein, the width of the upper surface of the first conductive portion is smaller than the width of the bottom surface; the conductive layer includes a light-shielding layer, a source-drain layer, and a gate layer, the gate layer is disposed on the side of the light-shielding layer away from the substrate, and the source-drain layer is disposed on the side of the gate layer away from the light-shielding layer; the angle between the side surface and the bottom surface of the first conductive portion is defined as a slope angle, the slope angle of the first conductive portion of the gate layer is greater than the slope angle of the first conductive portion of the light-shielding layer, the slope angle of the first conductive portion of the source-drain layer is greater than the slope angle of the first conductive portion of the light-shielding layer, and the slope angle of the first conductive portion of the gate layer is smaller than the slope angle of the first conductive portion of the source-drain layer.

2. The display panel as described in claim 1, characterized in that, The etching selectivity of the second conductive part is greater than that of the first conductive part.

3. The display panel as described in claim 1, characterized in that, The greater the thickness of the second conductive part, the smaller the slope angle of the first conductive part.

4. The display panel as described in claim 1, characterized in that, The side surface of the first conductive part is concave.

5. The display panel as described in claim 1, characterized in that, The material of the second conductive part includes metal oxides or alloys.

6. The display panel as described in claim 5, characterized in that, The first conductive part has a first material, and the second conductive part has an alloy composed of a second material and etching control elements; Wherein, the first material is a metal or alloy, the second material is the same as the first material, and the etching control element includes at least one metal element.

7. The display panel as described in claim 6, characterized in that, The etching control element accounts for a greater than or equal to 5% and less than or equal to 50% of the atomic percentage of the second conductive part.

8. The display panel as described in claim 6, characterized in that, The first material is selected from one or more of copper, aluminum, molybdenum, titanium and silver, and the etching control element is selected from one or more of molybdenum, manganese, magnesium, aluminum, tungsten, titanium and zinc.

9. A method for manufacturing a display panel, characterized in that, A method for manufacturing a display panel as described in any one of claims 1 to 8, the method comprising the following steps: A first conductive material layer is formed above the substrate; A second conductive material layer is formed on the upper surface of the first conductive material layer; The first conductive material layer and the second conductive material layer are etched to form a first conductive part and a second conductive part, wherein the width of the upper surface of the first conductive part is smaller than the width of the bottom surface.

Images