Member for semiconductor manufacturing apparatus

Abstract

A wafer mounting table (10) is an example of a member for a semiconductor manufacturing apparatus, and is provided with a ceramic plate (20), a ceramic plate through-hole (24), a substrate (30), a substrate through-hole (34), an insulating sleeve (50), and a sleeve through-hole (54). The sleeve through-hole 54 passes through the insulating sleeve 50 in the vertical direction and communicates with the ceramic plate through-hole 24. The insulating sleeve (50) is adhered to the substrate through-hole (34) via an adhesive layer (60). The insulating sleeve (50) has a tool engagement section (female screw section (52)) capable of engaging with an external tool. When the tool engaging portion engages with the external tool, the rotation torque of the external tool is transmitted to the insulating sleeve 50.

Description

Technical Field The present invention relates to a component for semiconductor manufacturing equipment. Background Art Conventionally, there is a known semiconductor manufacturing device component, which includes: a ceramic plate with electrodes built therein, and a conductive substrate provided on the lower surface side of the ceramic plate. For example, Patent Document 1 discloses: Based on the above semiconductor manufacturing device component, it includes: a ceramic plate through hole that penetrates the ceramic plate along the thickness direction; a substrate through hole that penetrates the substrate along the thickness direction; and an insulating sleeve that is inserted into the substrate through hole, and the outer peripheral surface of which is bonded to the inner peripheral surface of the substrate through hole by an adhesive layer. Prior art literature Patent Literature Patent Document 1: Utility Model Grant No. 3154720 Summary of the invention However, if the semiconductor manufacturing device component is used for a long period of time, the adhesive between the substrate through hole and the insulating sleeve may corrode and deteriorate and be consumed. In most cases, the semiconductor manufacturing device component whose adhesive has been consumed can be used again by replacing the adhesive. The replacement of the adhesive requires temporarily removing the insulating sleeve and re-bonding. However, the operation of removing the insulating sleeve is difficult, and the ceramic plate and substrate may be damaged during the operation. The present invention has been implemented to solve the above-mentioned problems, and a main object of the present invention is to enable easy removal of an insulating sleeve.

[0001] The semiconductor manufacturing device component of the present invention comprises: A ceramic plate having a wafer placement surface on an upper surface and having electrodes built therein; A ceramic plate through hole, the ceramic plate through hole penetrating the ceramic plate in an up-down direction; A conductive substrate disposed on the lower surface of the ceramic plate; A substrate through hole, the substrate through hole passes through the substrate in a vertical direction; an insulating sleeve, the insulating sleeve being inserted into the substrate through hole, the outer peripheral surface of the insulating sleeve being bonded to the inner peripheral surface of the substrate through hole by means of an adhesive layer; and a sleeve through hole, the sleeve through hole penetrating the insulating sleeve in the up-down direction and communicating with the ceramic plate through hole, The semiconductor manufacturing device component is characterized in that: The insulating sleeve has a tool engaging portion that can engage with an external tool. When the tool engaging portion is engaged with the external tool, the rotational torque of the external tool is transmitted to the insulating sleeve. In the semiconductor manufacturing device component, the insulating sleeve has a tool engaging portion that can be engaged with an external tool. When the tool engaging portion is engaged with the external tool, the rotational torque of the external tool is transmitted to the insulating sleeve. When the insulating sleeve is removed from the substrate through hole, the external tool is engaged with the tool engaging portion. When the external tool is rotated, the adhesive layer is cut by the rotational torque. Therefore, the insulating sleeve can be easily removed from the substrate through hole.

[0002] In the semiconductor manufacturing device component of the present invention (the semiconductor manufacturing device component described in [1] above), the substrate may have a built-in coolant flow path, and the tool engaging portion may be arranged to be lower than the bottom surface of the coolant flow path. When the tool engaging portion is arranged to be higher than the bottom surface of the coolant flow path, the shape of the tool engaging portion may sometimes affect the thermal uniformity of the wafer, but here, since the tool engaging portion is arranged to be lower than the bottom surface of the coolant flow path, the influence is reduced.

[0003] In the semiconductor manufacturing device component of the present invention (the semiconductor manufacturing device component described in [2] above), the lower end of the adhesive layer can be located at: the same as the bottom surface of the coolant flow path or lower than the bottom surface of the coolant flow path and higher than the tool engaging portion. If the lower end of the adhesive layer is located at: the same as the bottom surface of the coolant flow path or lower than the bottom surface of the coolant flow path, the heat from the ceramic plate is efficiently transferred to the coolant flow path via the adhesive layer. In addition, if the lower end of the adhesive layer is located at a position higher than the tool engaging portion, the amount of adhesive layer is small, and the insulating sleeve can be easily removed from the substrate through-hole.

[0004] In the semiconductor manufacturing device component of the present invention (the semiconductor manufacturing device component described in any one of [1] to [3] above), the tool engaging portion may be: an internal thread portion provided in the sleeve through hole, or may be: an external thread portion provided on the outer peripheral surface of the insulating sleeve, or may be: a plurality of slit grooves provided along the upper and lower directions from the lower end of the insulating sleeve. In the case where the tool engaging portion is an external thread portion, the internal thread may be used as an external tool. In the case where the tool engaging portion is an internal thread portion, the external thread may be used as an external tool. In the case where the tool engaging portion is a slit groove, as an external tool, for example, a tool having an insertion portion that can be inserted into at least two of the plurality of slit grooves may be used.

[0005] In the semiconductor manufacturing device component of the present invention (the semiconductor manufacturing device component described in any one of [1] to [3] above), the cross section of the sleeve through hole when the tool engaging portion is cut along a surface parallel to the wafer placement surface may be a polygon, a shape in which a convex portion or a concave portion is provided on a circle, or a shape in which a circle is cut along two parallel chords. In the case where the tool engaging portion is a hole having a predetermined cross-sectional shape (a polygon, a shape in which a convex portion or a concave portion is provided on a circle, or a shape in which a circle is cut along two parallel chords), a tool that fits into the predetermined shape may be used as an external tool.

[0006] In the semiconductor manufacturing device component of the present invention (the semiconductor manufacturing device component described in any one of [1] to [3] above), the cross-sectional outer shape of the insulating sleeve when the tool engaging portion is cut along a plane parallel to the wafer placement surface may be a polygon, or may be a shape in which a convex portion or a concave portion is provided on a circle, or may be a shape in which a circle is cut along two parallel chords. In the case where the tool engaging portion has an outer shape of a cross-sectional prescribed shape (a polygon, or a shape in which a convex portion or a concave portion is provided on a circle, or a shape in which a circle is cut along two parallel chords), a tool that fits into its prescribed shape may be used as an external tool. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 It is a top view of the wafer stage 10 . Figure 2 yes Figure 1 A-A cross-section diagram. Figure 3 yes Figure 2 A partial enlarged view of . Figure 4 It is an explanatory diagram of the insulating sleeve 50 . Figure 5 It is a manufacturing process diagram of the wafer placement table 10. Figure 6 It is a process diagram of the work of removing the insulating sleeve 50 from the substrate through-hole 34 . Figure 7 It is an explanatory diagram of the insulating sleeve 150 . Figure 8 It is an explanatory diagram of the insulating sleeve 250 . Fig. 9 It is an explanatory diagram of the insulating sleeve 350 . Fig.10 It is an explanatory diagram of the insulating sleeve 450 . Fig.11 It is an explanatory diagram of the insulating sleeve 550 . Fig.12 It is an explanatory diagram of another example of the insulating sleeve 550 . DETAILED DESCRIPTION Next, preferred embodiments of the present invention will be described with reference to the accompanying drawings. Figure 1 is a top view of the wafer stage 10, Figure 2 yes Figure 1 A-A cross-section diagram, Figure 3 yes Figure 2 The enlarged view of the part (the enlarged view in the single-point dashed line frame), Figure 4 1 is an explanatory diagram of the insulating sleeve 50 ( Figure 4 (A) is a top view. Figure 4 (B) is the main view, Figure 4 (C) is a bottom view). It should be noted that in this specification, "up" and "down" indicate relative positional relationships, not absolute positional relationships. Therefore, depending on the orientation of the wafer stage 10, "up" and "down" become "down", "up", or become "left", "right", or become "front", "rear". The wafer stage 10 is an example of a component for a semiconductor manufacturing apparatus of the present invention. Figure 2 As shown, it comprises: a ceramic plate 20 , a substrate 30 , a bonding layer 40 , an insulating sleeve 50 , an adhesive layer 60 , and a gas hole 70 . The ceramic plate 20 is a circular plate (e.g., 300 mm in diameter and 5 mm in thickness) made of ceramic such as alumina sintered body or aluminum nitride sintered body. The upper surface of the ceramic plate 20 is a wafer placement surface 21 for placing the wafer W. The ceramic plate 20 has an electrostatic electrode 22 and a heater electrode 23 built therein in the order close to the wafer placement surface 21. Figure 1 As shown, a ring-shaped sealing band 21a is formed along the outer edge of the wafer placing surface 21 of the ceramic plate 20, and a plurality of circular small protrusions 21b are formed on the entire inner surface of the sealing band 21a. The sealing band 21a and the circular small protrusions 21b are of the same height, and their heights are, for example, several μm to several tens of μm. The portion of the wafer placing surface 21 where the sealing band 21a and the circular small protrusions 21b are not provided is called a reference surface 21c. The electrostatic electrode 22 is a planar mesh electrode, which is connected to an external DC power source by means of a power supply component (not shown). The power supply component is electrically insulated from the bonding layer 40 and the substrate 30. When a DC voltage is applied to the electrostatic electrode 22, the wafer W is adsorbed and fixed to the wafer loading surface 21 (specifically, the upper surface of the sealing tape 21a and the upper surface of the circular small protrusion 21b) by the electrostatic adsorption force; when the application of the DC voltage is released, the adsorption and fixation of the wafer W on the wafer loading surface 21 is released. The heater electrode 23 is a resistance heating element that is wired from one end to the other end of the entire ceramic plate 20 in a one-stroke manner when viewed from above. A heater power source is connected to one end and the other end of the heater electrode 23 by means of a power supply component not shown. The power supply component is electrically insulated from the bonding layer 40 and the substrate 30. When the heater electrode 23 is energized, it generates heat to heat the wafer placement surface 21 and the wafer W. The substrate 30 is a circular plate with good electrical conductivity and thermal conductivity (for example, a circular plate with a diameter greater than that of the ceramic plate 20 and a thickness of 20 to 40 mm). A refrigerant flow path 32 for refrigerant circulation is formed inside the substrate 30. The refrigerant flowing in the refrigerant flow path 32 is preferably a liquid, and preferably electrically insulating. As electrically insulating liquids, for example, fluorine-based inactive liquids can be cited. The refrigerant flow path 32 is formed in a single stroke from one end (inlet) to the other end (outlet) of the substrate 30 as a whole when viewed from above. At one end and the other end of the refrigerant flow path 32 are respectively connected: a supply port and a recovery port of an external refrigerant device not shown in the figure. The refrigerant supplied from the supply port of the external refrigerant device to one end of the refrigerant flow path 32 passes through the refrigerant flow path 32, returns to the recovery port of the external refrigerant device from the other end of the refrigerant flow path 32, and after temperature adjustment, is supplied again from the supply port to one end of the refrigerant flow path 32. The substrate 30 is connected to a high frequency (RF) power source and also serves as an RF electrode. The material of the substrate 30 may include, for example, a metal material, or a composite material of metal and ceramic. Examples of the metal material include: Al, Ti, Mo or alloys thereof. Examples of the composite material of metal and ceramic include: metal matrix composite material (MMC), ceramic matrix composite material (CMC), etc. Specific examples of the above composite materials include: a material containing Si, SiC and Ti (also referred to as SiSiCTi), a material obtained by impregnating Al and / or Si into a SiC porous body, a composite material of Al2O3 and TiC, etc. As the material of the substrate 30, a material having a thermal expansion coefficient close to that of the material of the ceramic plate 20 is preferred. Here, the bonding layer 40 is made of metal and bonds the lower surface of the ceramic plate 20 and the upper surface of the substrate 30. For example, the bonding layer 40 is formed by TCB (Thermal compression bonding). TCB refers to a well-known method of sandwiching a metal bonding material between two components to be bonded, heating the two components to a temperature below the solidus temperature of the metal bonding material, and bonding the two components under pressure. The insulating sleeve 50 is received in the substrate through-hole 34. The substrate through-hole 34 is a hole that penetrates the substrate 30 in the up-down direction and is arranged not to penetrate the refrigerant flow path 32. The upper end surface 50a of the insulating sleeve 50 enters the bonding layer through-hole 44 that penetrates the metal bonding layer 40 in the up-down direction. The lower end surface 50b of the insulating sleeve 50 is at a height substantially the same as the lower surface of the substrate 30. The insulating sleeve 50 is a substantially cylindrical component made of an electrically insulating material (for example, the same material as the ceramic plate 20), and has a sleeve through-hole 54 that penetrates the insulating sleeve 50 in the up-down direction along the central axis of the insulating sleeve 50. The outer peripheral surface 50c of the insulating sleeve 50 is bonded to the inner peripheral surface of the substrate through-hole 34 by means of an adhesive layer 60. As the material of the adhesive layer 60, for example, insulating resins such as epoxy resin, acrylic resin, and silicone resin can be cited. The adhesive layer 60 is also filled between the outer peripheral surface 50c of the insulating sleeve 50 and the inner peripheral surface of the bonding layer through hole 44, and also enters between the upper end surface 50a of the insulating sleeve 50 and the lower surface of the ceramic plate 20. The lower end of the adhesive layer 60 is located at the same position as the bottom surface 32a of the coolant flow path 32 or at a lower side than the bottom surface 32a. The insulating sleeve 50 has an internal thread portion 52 as a tool engaging portion that can be engaged with a remanufacture tool 90 described later. The internal thread portion 52 is arranged to be located below the bottom surface 32a of the coolant flow path 32 in the sleeve through hole 54. When the internal thread portion 52 is engaged with the remanufacture tool 90, the rotation torque of the remanufacture tool 90 is transmitted to the insulating sleeve 50. The lower end of the adhesive layer 60 is located above the internal thread portion 52. The gas hole 70 is composed of a ceramic plate through hole 24 and a sleeve through hole 54. The ceramic plate through hole 24 penetrates the ceramic plate 20 in the up-down direction (thickness direction). The ceramic plate through hole 24 is open at the reference surface 21c of the chip loading surface 21. The electrostatic electrode 22 and the heater electrode 23 are not exposed on the inner peripheral surface of the ceramic plate through hole 24. That is, the inner peripheral surface of the ceramic plate through hole 24 is covered with ceramic. The sleeve through hole 54 is connected to the ceramic plate through hole 24. The gas hole 70 is used to supply heat-conducting gas to the chip loading surface 21. It should be noted that in the present embodiment, the opening portion 64 of the adhesive layer 60 located between the lower surface of the ceramic plate 20 and the upper end surface 50a of the insulating sleeve 50 also constitutes a part of the gas hole 70. Next, based on Figure 5 , an example of a method for manufacturing the wafer stage 10 is described. Figure 5 It is a manufacturing process diagram of the wafer placement table 10. First, the ceramic plate 20, the substrate 30 and the metal bonding material 80 are prepared. Figure 5(A)). The ceramic plate 20 has an electrostatic electrode 22 and a heater electrode 23 built in, and has a ceramic plate through hole 24. The substrate 30 has a refrigerant flow path 32 built in, and has a substrate through hole 34. The metal bonding material 80 has a bonding material through hole 84 at a position opposite to the substrate through hole 34 of the substrate 30. The diameter of the bonding material through hole 84 is the same as or slightly larger than the diameter of the substrate through hole 34. The metal bonding material 80 is sandwiched between the upper surface of the substrate 30 and the lower surface of the ceramic plate 20 to form a laminate. At this time, the substrate through hole 34, the bonding material through hole 84 and the ceramic plate through hole 24 are aligned in a connected manner. Next, the laminate is subjected to pressure bonding (TCB) at a temperature below the solidus temperature of the metal bonding material 80 (e.g., a temperature above the solidus temperature minus 20°C and below the solidus temperature), and then returned to room temperature. Thus, the ceramic plate 20 and the substrate 30 are bonded via the bonding layer 40 obtained by the change of the metal bonding material 80 ( Figure 5 (B) As the metal bonding material 80, an Al-Mg bonding material or an Al-Si-Mg bonding material can be used. Next, the insulating sleeve 50 is prepared. Then, the adhesive 65 is applied to the upper end surface 50a and the outer peripheral surface 50c of the insulating sleeve 50, and the insulating sleeve 50 is inserted into the substrate through hole 34 ( Figure 5 (B)). It should be noted that Figure 5 (B) shows the situation where the insulating sleeve 50 is inserted from below the substrate 30. Figure 5 The stacked body of (B) is turned upside down, and the insulating sleeve 50 is inserted from above the substrate 30 . Thereafter, the adhesive 65 is cured to form the adhesive layer 60, and the wafer placement table 10 ( Figure 5 (C)). Next, an example of using the wafer carrier 10 constructed as described above is described. First, in a state where the wafer carrier 10 is set in a chamber not shown in the figure, a wafer W is placed on the wafer placement surface 21. Then, the pressure in the chamber is reduced by a vacuum pump and adjusted to a predetermined vacuum degree, and a DC voltage is applied to the electrostatic electrode 22 of the ceramic plate 20 to generate an electrostatic adsorption force, thereby adsorbing and fixing the wafer W to the wafer placement surface 21 (specifically, the upper surface of the sealing tape 21a and the upper surface of the circular small protrusion 21b). In addition, the heater electrode 23 is energized to generate heat on the ceramic plate 20, thereby heating the wafer W to a predetermined temperature. In addition, a back side gas is introduced from a gas cylinder not shown in the figure into the sleeve through hole 54 constituting the gas hole 70. As the back side gas, a heat conductive gas (such as He gas, etc.) is used. The back side gas introduced into the gas hole 70 fills and seals the space between the back side of the chip W and the reference surface 21c of the chip placement surface 21 (the space surrounded by the back side of the chip W, the sealing tape 21a of the chip placement surface 21, the small circular protrusion 21b and the reference surface 21c). Due to the presence of this back side gas, heat conduction between the chip W and the ceramic plate 20 is efficiently performed. Next, the chamber is set to a reaction gas atmosphere of a specified pressure (for example, tens to hundreds of Pa). In this state, an RF voltage is applied between an upper electrode (not shown) provided at the top part of the chamber and the substrate 30 of the chip placement table 10 to generate plasma. The surface of the chip W is processed by the generated plasma. The coolant circulates in the coolant flow path 32 of the substrate 30 in a timely manner. If the wafer stage 10 is used for a long period of time, the adhesive layer 60 may be corroded and degraded and consumed. In this case, other parts of the wafer stage 10 can still be used in most cases. In this case, the adhesive layer 60 is remade so that the wafer stage 10 can be used again. Figure 6 FIG. 1 is a process diagram for removing the insulating sleeve 50 from the substrate through hole 34. First, a remanufacturing tool (external tool) 90 is prepared. The remanufacturing tool 90 is a tool having an elongated shaft 94 mounted on a handle 92 that can be held by hand, and having an external threaded portion 94a at the end of the shaft 94. The operator grasps the handle 92 of the remanufacturing tool 90 and screws the external threaded portion 94a of the remanufacturing tool 90 into the tool engaging portion, i.e., the internal threaded portion 52 ( Figure 6 (A)). Next, the operator applies force in the same direction as the screwing direction to the handle 92 ( Figure 6 (B)). Then, the internal thread portion 52 transmits the rotation torque of the remanufacture tool 90 to the insulating sleeve 50. As a result, the insulating sleeve 50 wants to rotate integrally with the remanufacture tool 90, and thus the adhesive layer 60 is cut by its rotational force. After that, the operator pulls out the insulating sleeve 50 integrally with the remanufacture tool 90 from the substrate through hole 34 ( Figure 6(C)). After cleaning the substrate through hole 34 and the insulating sleeve 50, an adhesive is applied to the insulating sleeve 50, inserted into the substrate through hole 34, and the adhesive is cured. Thus, the wafer stage 10 can be used again. In the wafer stage 10 described in detail above, the insulating sleeve 50 has an internal thread portion 52 as a tool engaging portion that can be engaged with the rework tool 90. When the internal thread portion 52 is engaged with the rework tool 90, the rotational torque of the rework tool 90 is transmitted to the insulating sleeve 50. When the insulating sleeve 50 is removed from the substrate through-hole 34, the external thread portion 94a of the rework tool 90 is engaged with the internal thread portion 52. When the rework tool 90 is rotated, the adhesive layer is cut by the rotational torque. Therefore, the insulating sleeve 50 can be easily removed from the substrate through-hole 34. In addition, when the internal thread portion 52 is arranged to be higher than the bottom surface 32a of the coolant flow path 32, the shape of the internal thread portion 52 sometimes affects the thermal uniformity of the chip W. However, here, since the internal thread portion 52 is arranged to be lower than the bottom surface 32a of the coolant flow path 32, its influence is reduced. In addition, the lower end of the adhesive layer 60 is located at the same position as or lower than the bottom surface 32a of the coolant flow path 32. Therefore, the heat from the ceramic plate 20 is efficiently transferred to the coolant flow path 32 via the adhesive layer 60. In addition, the lower end of the adhesive layer 60 is located at a position higher than the internal thread portion 52. Therefore, the amount of the adhesive layer 60 is small, and the insulating sleeve 50 can be easily removed from the substrate through hole 34. In addition, the material of the bonding layer 40 is metal, and therefore, corrosion degradation is reduced compared to resin. Therefore, among the various parts constituting the wafer stage 10, the life of the adhesive layer 60 between the insulating sleeve 50 and the substrate through hole 34 tends to be the shortest. Therefore, in the case where the bonding layer 40 is made of metal, the application of the present invention is of great significance. It should be noted that the present invention is not limited to the above-mentioned embodiments, and can be implemented in various forms as long as they fall within the technical scope of the present invention. In the above-mentioned embodiment, the insulating sleeve 50 having the internal thread portion 52 as the tool engaging portion is exemplified, but the present invention is not particularly limited to this. Figure 7 to Figure 11 Insulating sleeves 150 , 250 , 350 , 450 , 550 are shown instead of insulating sleeve 50 . Figure 7 (A)~ Fig.11 (A) is a top view. Figure 7 (B)~ Fig.11 (B) is the main view, Figure 7 (C)~ Fig.11 (C) is a bottom view. Figure 7 to Figure 11In the drawings, the same components as those of the insulating sleeve 50 of the above-described embodiment are denoted by the same reference numerals. Figure 7 The insulating sleeve 150 shown has a tool engaging portion 152 in the sleeve through hole 54. The tool engaging portion 152 is obtained by setting the horizontal cross section of the interval from the lower end 50b of the insulating sleeve 150 to a predetermined height in the sleeve through hole 54 to a double chamfered shape (a shape obtained by cutting a circle with two parallel chords). The horizontal cross section refers to: Figure 2 The cross section is when the insulating sleeve 150 is cut along a plane parallel to the chip loading surface 21. The specified height is defined as follows: when the insulating sleeve 150 is bonded to the substrate through-hole 34, the upper end of the tool engaging portion 152 is lower than the bottom surface 32a of the refrigerant flow path 32. In this case, as a remaking tool, a tool engaged with the tool engaging portion 152 can be used. In addition, when the insulating sleeve 150 is pulled out from the substrate through-hole 34, another tool is pushed against the inner surface of the tool engaging portion 152 (or the inner surface of the sleeve through-hole 54) and pulled out. It should be noted that Figure 7 In the example, the horizontal cross section can be set to a polygon (such as a quadrilateral, pentagon, hexagon, etc.) instead of a double chamfered shape. Figure 8 The insulating sleeve 250 shown has a tool engaging portion 252 in the sleeve through hole 54. The tool engaging portion 252 is obtained by setting the horizontal cross-section of the interval from the lower end 50b of the insulating sleeve 250 to the specified height in the sleeve through hole 54 to a shape in which a convex portion is provided on a circle. The specified height is defined as follows: when the insulating sleeve 250 is bonded to the substrate through hole 34, the upper end of the tool engaging portion 252 is lower than the bottom surface 32a of the refrigerant flow path 32. In this case, as a remaking tool, a tool engaged with the tool engaging portion 252 can be used. In addition, when the insulating sleeve 250 is pulled out from the substrate through hole 34, another tool is pushed against the inner surface of the tool engaging portion 252 (or the inner surface of the sleeve through hole 54) to pull it out. It should be noted that, Figure 8 In the embodiment, the horizontal cross section may be set to a shape in which a concave portion is provided on a circle, instead of a shape in which a convex portion is provided on a circle. Fig. 9 The insulating sleeve 350 shown has two slit grooves 352 along the up-down direction from the lower end 50b to the specified height. The two slit grooves 352 are equivalent to the tool engaging portion. The specified height is defined as: when the insulating sleeve 350 is bonded to the substrate through-hole 34, the upper end of the slit groove 352 is lower than the bottom surface 32a of the refrigerant flow path 32. In this case, as a remaking tool, a tool that is engaged with the two slit grooves 352 can be used. In addition, when the insulating sleeve 350 is pulled out from the substrate through-hole 34, another tool is pushed against the inner surface of the sleeve through-hole 54 to pull it out. Fig.10The insulating sleeve 450 shown has an external threaded portion 452 in the interval from the lower end 50b to the specified height on the outer peripheral surface of the insulating sleeve 450. The external threaded portion 452 is equivalent to the tool engaging portion. The specified height is defined as: when the insulating sleeve 450 is bonded to the substrate through hole 34, the upper end of the external threaded portion 452 is lower than the bottom surface 32a of the refrigerant flow path 32. In this case, as a remaking tool, a tool having an internal threaded portion that can be screwed on the external threaded portion 452 can be used. When the insulating sleeve 450 is pulled out from the substrate through hole 34, the tool screwed on the external threaded portion 452 can be directly pulled out. Fig.11 The insulating sleeve 550 shown has a tool engaging portion 552 on the outer peripheral surface. The tool engaging portion 552 is a portion obtained by setting the horizontal cross-section of the outer peripheral surface of the insulating sleeve 450 from the lower end 50b to the specified height to a double chamfered shape. The specified height is defined as: when the insulating sleeve 550 is bonded to the substrate through-hole 34, the upper end of the tool engaging portion 552 is lower than the bottom surface 32a of the refrigerant flow path 32. In this case, as a remaking tool, a tool (such as pliers or tweezers) for clamping the tool engaging portion 552 can be used. In addition, when the insulating sleeve 550 is pulled out from the substrate through-hole 34, it can be directly pulled out in a state where the tool engaging portion 552 is clamped using the tool. It should be noted that, Fig.11 In the example, the horizontal cross section can be set to a polygon (such as a quadrilateral, pentagon, hexagon, etc.) instead of a double chamfered shape. Fig.12 yes Fig.11 A modified example of the insulating sleeve 550, Fig.12 (A) is a top view. Fig.12 (B) is the main view, Fig.12 (C) is a bottom view. Fig.12 In the insulating sleeve 550, the flat surface of the tool engaging portion 552 with a double chamfer is provided with an upward step surface 552a. Accordingly, when the insulating sleeve 550 is pulled out from the substrate through hole 34, a tool with a hook-shaped front end (such as pliers, tweezers, see Fig.12 The hook-shaped front end is hooked on the step surface 552a and can be easily pulled out. It should be noted that, when the tool engaging portion is provided on the outer peripheral surface of the insulating sleeve, the remaking tool needs to be inserted into the outer peripheral surface of the insulating sleeve. Therefore, it is preferred that the lower end of the adhesive layer is located at a position higher than the tool engaging portion. In addition, when the tool engaging portion is not a threaded structure, an upward step surface can be provided on the tool engaging portion (for example, refer to Fig.12 ). According to this, if the external tool is hooked on the upward step surface, the insulating sleeve can be easily pulled out from the substrate through-hole. In the above-mentioned embodiment, a metal bonding layer 40 is illustrated, but it is not particularly limited thereto. For example, the bonding layer 40 may be made of resin. Examples of the resin include insulating resins such as epoxy resins, acrylic resins, and silicone resins. In the case where the bonding layer 40 is made of resin, since it is prone to corrosion and degradation, it is preferred to form an annular space between the lower surface of the ceramic plate 20 and the upper surface of the substrate 30 and the outer peripheral surface of the bonding layer 40, and to configure a sacrificial ring in the space. Accordingly, the resin bonding layer 40 is protected by the sacrificial ring. In addition, in the case where the sacrificial ring is corroded and degraded, the sacrificial ring can be replaced. In the above-mentioned embodiment, the electrostatic electrode 22 and the heater electrode 23 are built into the ceramic plate 20, but the present invention is not particularly limited thereto. For example, only one of the electrostatic electrode 22 and the heater electrode 23 may be built into the ceramic plate 20. Alternatively, the heater electrode 23 may be built into the ceramic plate 20 in two or more layers in the thickness direction. In the above-mentioned embodiment, the ceramic plate through hole 24 and the sleeve through hole 54 are used as the gas hole 70, but the present invention is not particularly limited thereto. For example, the ceramic plate through hole 24 and the sleeve through hole 54 can be used as lift pin holes. The lift pin holes are holes through which lift pins that move the wafer W up and down relative to the wafer placement surface 21 are inserted. When the wafer W is supported by, for example, three lift pins, the lift pin holes are provided at three locations. Industrial Applicability The semiconductor manufacturing apparatus component of the present invention can be used in the field of processing a wafer using plasma or the like, for example. Explanation of symbols 10 wafer placement table, 20 ceramic plate, 21 wafer placement surface, 21a sealing tape, 21b small circular protrusion, 21c reference surface, 22 electrostatic electrode, 23 heater electrode, 24 ceramic plate through hole, 30 substrate, 32 coolant flow path, 32a bottom surface, 34 substrate through hole, 40 bonding layer, 44 bonding layer through hole, 50 insulating sleeve, 50a upper end surface, 50b lower end surface, 50c outer peripheral surface, 52 inner Threaded portion, 54 sleeve through hole, 60 adhesive layer, 64 opening portion, 65 adhesive, 70 gas hole, 80 metal bonding material, 84 bonding material through hole, 90 remanufactured tool, 92 handle, 94 shaft, 94a external threaded portion, 150, 250, 350, 450, 550 insulating sleeve, 152, 252, 552 tool engaging portion, 352 slit groove, 452 external threaded portion, 552a step surface.

Claims

1. A component for a semiconductor manufacturing device, comprising: A ceramic plate having a wafer placement surface on an upper surface and having electrodes built therein; A ceramic plate through hole, the ceramic plate through hole penetrating the ceramic plate in an up-down direction; A conductive substrate disposed on the lower surface of the ceramic plate; A substrate through hole, the substrate through hole passes through the substrate in a vertical direction; an insulating sleeve, the insulating sleeve being inserted into the substrate through hole, the outer peripheral surface of the insulating sleeve being bonded to the inner peripheral surface of the substrate through hole by means of an adhesive layer; and a sleeve through hole, the sleeve through hole penetrating the insulating sleeve in the up-down direction and communicating with the ceramic plate through hole, The semiconductor manufacturing device component is characterized in that: The insulating sleeve has a tool engaging portion that can engage with an external tool. When the tool engaging portion is engaged with the external tool, the rotational torque of the external tool is transmitted to the insulating sleeve.

2. The semiconductor manufacturing device component according to claim 1, wherein: The substrate has a refrigerant flow path built in. The tool engagement portion is provided below a bottom surface of the coolant flow path.

3. The semiconductor manufacturing device component according to claim 2, wherein: The lower end of the adhesive layer is located at the same level as or below the bottom surface of the coolant flow path and above the tool engagement portion.

4. The semiconductor manufacturing equipment component according to any one of claims 1 to 3, wherein: The tool engaging portion is an internal thread portion provided in the sleeve through hole, an external thread portion provided on the outer peripheral surface of the insulating sleeve, or a plurality of slit grooves provided along the vertical direction from the lower end of the insulating sleeve.

5. The semiconductor manufacturing equipment component according to any one of claims 1 to 3, characterized in that: When the tool engaging portion is cut along a plane parallel to the wafer loading surface, the cross section of the sleeve through hole is a polygon, a shape having a convex portion or a concave portion on a circle, or a shape obtained by cutting a circle along two parallel chords.

6. The semiconductor manufacturing equipment component according to any one of claims 1 to 3, characterized in that: When the tool engaging portion is cut along a plane parallel to the wafer loading surface, the cross-sectional outer shape of the insulating sleeve is a polygon, a shape having convex or concave portions on a circle, or a shape obtained by cutting a circle along two parallel chords.

Images