Diaphragm processing device for electrochemical equipment and sputtering target

Abstract

The invention relates to a diaphragm processing device for electrochemical equipment and a sputtering target. The present invention provides a membrane treatment apparatus for an electrochemical device, the membrane treatment apparatus comprising: a vacuum chamber; a base disposed in the vacuum chamber and configured to allow a diaphragm to be seated on the base; and a sputtering target provided on the vacuum chamber and including a target element and a light emitting element to be deposited on the diaphragm, thereby obtaining an advantageous effect of accurately detecting a lifetime of the sputtering target and a replacement time of the sputtering target.

Description

[0001] Related Applications

[0002] This application claims the benefit of Korean Patent Application No. 10-2023-0117179 filed in the Korean Intellectual Property Office on September 4, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] Embodiments of the present invention relate to a sputtering target and a diaphragm processing device for an electrochemical device, which can improve stability and reliability and accurately detect the service life of the sputtering target and the time to replace the sputtering target. Background Art

[0004] There is an increasing demand for research and development of alternative energy sources to cope with global warming and the depletion of fossil fuels. Hydrogen energy has received attention as a practical solution for solving environmental and energy problems.

[0005] In particular, hydrogen is of interest as a future energy carrier because it has high energy density and properties suitable for application on a grid scale.

[0006] A water electrolysis stack, which is one of the electrochemical devices, refers to a device that generates hydrogen and oxygen by electrochemically decomposing water. A water electrolysis stack can be configured by stacking tens or hundreds of water electrolysis stacks (unit cells) in series.

[0007] The membrane-electrode assembly (MEA) is located at the innermost side of the unit cell of the water electrolysis stack. The membrane-electrode assembly includes a perfluorinated sulfonic acid ionomer-based electrolyte membrane capable of moving hydrogen ions (protons), and an anode and a cathode respectively disposed on two opposite surfaces of the electrolyte membrane.

[0008] In addition, the porous transport layer (PTL), the gas diffusion layer (GDL), and the gasket may be stacked on each outer portion (outer surface) of the membrane electrode assembly (MEA) on which the anode and the cathode are positioned. The diaphragm (or bipolar plate) may be disposed on the outer side (outer surface) of the porous transport layer (PTL) and the gas diffusion layer (GDL). The diaphragm includes a flow path (flow field) through which reactants, coolants, and products produced by the reaction flow, or the diaphragm may include a structure that can replace the flow path. Summary of the invention

[0009] The present invention provides a sputtering target and a diaphragm processing apparatus for an electrochemical device, which can improve stability and reliability and accurately detect the life of the sputtering target and the time to replace the sputtering target.

[0010] In particular, the present invention accurately and visually detects the life of a sputtering target and the time to replace the sputtering target without using an expensive analysis device, and replaces the sputtering target in time.

[0011] The present invention also improves the coating quality of the separator and minimizes coating defects.

[0012] Among other things, the present invention has minimized the imbalances and defects in the coating layer caused by local consumption of the sputtering target.

[0013] The present invention also simplifies the structure and manufacturing process and reduces the cost.

[0014] The objects achieved by the embodiments are not limited to the above objects, but also include objects or effects that can be understood from the schemes or embodiments described below.

[0015] An exemplary embodiment of the present invention provides a diaphragm processing apparatus for an electrochemical device, the diaphragm processing apparatus including: a vacuum chamber; a diaphragm in the vacuum chamber; and a sputtering target in the vacuum chamber, the sputtering target including a target element and a light emitting element.

[0016] In an exemplary embodiment, the sputtering target may include: a light emitting layer including a light emitting element; and a target layer including a target element stacked on the light emitting layer and facing the diaphragm. The sputtering target may further include a base layer, and the light emitting layer may be stacked on the base layer.

[0017] In an exemplary embodiment, the membrane processing apparatus may further include a flow rate controller configured to adjust a supply flow rate of the reaction gas to be supplied into the vacuum chamber. The membrane processing apparatus may further include an ion beam, an electron beam, a magnetron, a thermal evaporator, an arc generator, or a combination thereof.

[0018] An exemplary embodiment of the present invention provides a diaphragm processing device for an electrochemical device, the diaphragm processing device comprising: a vacuum chamber; a base, disposed in the vacuum chamber and configured to allow a diaphragm to seat on the base; and a sputtering target, disposed on the vacuum chamber and comprising a target element and a light-emitting element configured to be deposited on the diaphragm.

[0019] According to an exemplary embodiment of the present invention, a sputtering target for an object may include: a base layer; a light emitting layer including the light emitting element and stacked on the base layer; and a target layer including the target element and stacked on the light emitting layer facing the object.

[0020] According to an exemplary embodiment of the present invention, the diaphragm processing apparatus may include: an insulating member interposed between the target layer and the vacuum chamber.

[0021] According to the exemplary embodiment of the present invention, an opening portion may be provided on one surface of the vacuum chamber facing the diaphragm, and the sputtering target may be configured to cover the opening portion.

[0022] According to an exemplary embodiment of the present disclosure, the target element may include a noble metal.

[0023] According to an exemplary embodiment of the present invention, the target element may include at least any one of platinum (Pt), iridium (Ir), and gold (Au).

[0024] According to an exemplary embodiment of the present invention, the light emitting element may include at least any one of an ultraviolet sensitive material and a non-ferrous metal.

[0025] In an exemplary embodiment, the membrane processing apparatus may further include a flow controller configured to adjust a supply flow rate of the reaction gas to be supplied into the vacuum chamber. The membrane processing apparatus may further include an ion beam, an electron beam, a magnetron, a thermal evaporator, an arc generator, or a combination thereof.

[0026] Another exemplary embodiment of the present invention provides a sputtering target for an object, the sputtering target including: a base layer; a light emitting layer including a light emitting element and stacked on the base layer; and a target layer including the target element and stacked on the light emitting layer facing the object.

[0027] According to an exemplary embodiment of the present disclosure, the target element may include a noble metal.

[0028] According to an exemplary embodiment of the present invention, the target element may include at least any one of platinum (Pt), iridium (Ir), and gold (Au).

[0029] According to an exemplary embodiment of the present invention, the light emitting element may include at least any one of an ultraviolet sensitive material and a non-ferrous metal.

[0030] The ultraviolet sensitive material may be at least any one of silver chloride (AgCl), silver bromide (AgBr), silver iodide (AgI), spirooxazine, spiropyran, fulgides, benzophenone, zinc oxide and titanium dioxide.

[0031] The color material may include at least any one of lead (Pb), aluminum (Al), nickel (Ni), magnesium (Mg), tin (Sn), antimony (Sb), zinc (Zn), and titanium (Ti).

[0032] As discussed, the method and system suitably include the use of a controller or processor. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 12 is a view for explaining a separator treating apparatus for an electrochemical device according to an exemplary embodiment of the present invention.

[0034] Figure 2 It is a view for explaining a sputtering target according to an embodiment of the present invention.

[0035] Figure 3 1 is a view for explaining a sputtering process performed by the separator processing apparatus for an electrochemical device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0036] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0037] However, the technical spirit of the present invention is not limited to some embodiments described herein, but can be implemented in various forms. Within the scope of the technical spirit of the present invention, one or more constituent elements in the embodiments can be selectively combined and replaced.

[0038] In addition, unless otherwise specifically and clearly defined and stated, the terms (including technical and scientific terms) used in the embodiments of the present invention may be interpreted as the meanings commonly understood by ordinary technicians in the field to which the present invention belongs. The meanings of commonly used terms such as terms defined in dictionaries may be interpreted taking into account the contextual meanings of the relevant technology.

[0039] Furthermore, the terms used in the embodiments of the present invention are for explaining the embodiments and are not intended to limit the present invention.

[0040] In the present specification, unless otherwise specifically stated, a singular form may also include a plural form. The expression "at least one (or one or more) of A, B, and C" may include one or more of all combinations that can be made by combining A, B, and C.

[0041] Furthermore, terms such as first, second, A, B, (a), and (b) may be used to describe constituent elements of embodiments of the present invention.

[0042] These terms are used only for the purpose of distinguishing one constituent element from another constituent element, and the nature, sequence or order of the constituent elements is not limited by these terms.

[0043] In addition, when a component element is described as being “connected,” “coupled” or “attached” to another component element, the component element may be directly connected, coupled or directly connected to the other component element, or may be connected, coupled or attached to the other component element through another component element interposed therebetween.

[0044] Furthermore, the expression “one constituent element is disposed or arranged above (above) or below (below) another constituent element” includes not only a case where two constituent elements are in direct contact with each other but also a case where one or more other constituent elements are disposed or arranged between the two constituent elements. The expression “above (on) or below (below)” may indicate a downward direction as well as an upward direction based on one constituent element.

[0045] The terms used herein are only used for the purpose of describing specific embodiments, and are not intended to limit the present invention. As used herein, unless the context clearly indicates otherwise, the singular forms "one", "an" and "the" are intended to also include plural forms. These terms are only intended to distinguish one component from another component, and these terms do not limit the nature, order or order of the constituent components. It should also be understood that when the terms "comprises" and / or "comprising" are used in this specification, they specify the presence of the features, wholes, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, parts and / or their combinations. As used in this article, the term "and / or" includes any and all combinations of one or more related listed items. Throughout the specification, unless explicitly described to the contrary, the word "comprise" and variants such as "comprises" or "comprising" will be understood to imply the inclusion of the elements, but do not exclude any other elements. In addition, the terms "unit", "part", "device", and "module" described in the specification mean a unit for processing at least one function and operation, and can be implemented by hardware components or software components and a combination thereof.

[0046] Although the exemplary embodiments are described as using multiple units to perform the exemplary processes, it should be understood that the exemplary processes can also be performed by one or more modules. In addition, it should be understood that the term controller / control unit refers to a hardware device that includes a memory and a processor and is specifically programmed to perform the processes described herein. The memory is configured to store the modules, and the processor is specifically configured to execute the modules to perform one or more processes described further below.

[0047] In addition, the control logic of the present invention may be embodied as a non-volatile computer readable medium on a computer readable medium including executable program instructions executed by a processor, controller, etc. Examples of computer readable media include, but are not limited to, ROM, RAM, compact disk (CD)-ROM, magnetic tape, floppy disk, flash drive, smart card, and optical data storage device. The computer readable medium may also be distributed in a network coupled computer system so that the computer readable medium is stored and executed in a distributed manner, such as by a telematics server or a controller area network (CAN).

[0048] refer to Figures 1 to 3 According to an exemplary embodiment of the present invention, a diaphragm processing apparatus 10 for an electrochemical device includes a vacuum chamber 110; a base 120, which is disposed in the vacuum chamber 110 and is configured to allow a diaphragm 20 to be placed thereon; and a sputtering target 200, which is disposed on the vacuum chamber 110 and includes a target element 232 and a light emitting element 222 configured to be deposited on the diaphragm 20.

[0049] This can accurately detect the life of the sputtering target 200 and the time to replace the sputtering target 200 used to coat the diaphragm 20 .

[0050] That is, the durability and conductivity of the diaphragm 20 for electrochemical devices need to be ensured to ensure the performance of the electrochemical devices. To this end, a coating (eg, a noble metal coating) may be provided on the surface of the diaphragm 20 by a deposition process (eg, PVD) using a sputtering target 200 .

[0051] Meanwhile, the sputtering target 200 may be manufactured by stacking a target layer 230 including a target element 232 (e.g., a noble metal) on one surface of a base layer 210 including a base element (e.g., copper). When a thickness deviation of the target layer 230 increases to a predetermined level or more by a repeated deposition process using the sputtering target 200, or when the base layer 210 is exposed (e.g., partially exposed) due to consumption of the target layer 230, problems such as difficulty in forming a completely uniform thickness of a coating, deterioration in quality of the coating, and an increase in defect rate may occur.

[0052] In particular, when the base layer 210 is directly exposed to the diaphragm 20 due to consumption of the target layer 230 , basic elements constituting the base layer 210 will be emitted as ions, which causes a problem of contaminating the diaphragm 20 .

[0053] However, in the prior art, it is difficult for the operator to directly and intuitively detect the time to replace the sputtering target 200 (the time when the target layer 230 reaches its wear limit), and it is inevitable to use expensive analysis equipment to detect the time to replace the sputtering target 200, which leads to problems of reduced process efficiency and increased costs.

[0054] However, according to the embodiment of the present invention, the sputtering target 200 includes the target element 232 and the light emitting element 222, so that the operator can visually and directly recognize the life of the sputtering target 200 and the replacement time of the sputtering target 200 without using an expensive analysis device. Therefore, the effect of simply and accurately detecting the life of the sputtering target 200 and the replacement period of the sputtering target 200 can be obtained.

[0055] Specifically, according to an embodiment of the present invention, when the sputtering target 200 reaches its life limit (the light-emitting layer is exposed due to the consumption of the target layer), the operator can visually and directly identify the life of the sputtering target 200 and the replacement time of the sputtering target 200 through the light-emitting element 222 deposited on the diaphragm 20. Therefore, without performing a process of separating the sputtering target 200 from the vacuum chamber 110 and then performing a separation analysis process, the life of the sputtering target 200 can be accurately detected, and the sputtering target 200 can be replaced in time.

[0056] For reference, the separator treatment apparatus 10 for an electrochemical device according to an embodiment of the present invention may be used to form a coating on a surface of a separator 20 for an electrochemical device.

[0057] In this case, the electrochemical device is defined to include a water electrolysis stack configured to generate hydrogen and oxygen by electrochemically decomposing water and a fuel cell stack configured to generate electrical energy by a chemical reaction of a fuel (eg, hydrogen).

[0058] Hereinafter, an example will be described in which the membrane treatment apparatus 10 for an electrochemical device according to an embodiment of the present invention is used to form a coating on the surface of a membrane 20 of a water electrolysis stack for generating hydrogen and oxygen by decomposing water through an electrochemical reaction.

[0059] For example, a water electrolysis stack (electrochemical device) can be provided by stacking a plurality of unit cells in a reference stacking direction.

[0060] More specifically, the unit cell may include a reaction layer (not shown) and separators 20 stacked on one surface and the other surface of the reaction layer, respectively. The water electrolysis stack may be configured by stacking a plurality of unit cells in a reference stacking direction and then assembling end plates (not shown) to both opposite ends of the plurality of unit cells.

[0061] The reaction layer may have various structures capable of causing an electrochemical reaction of the target fluid (eg, water). The present invention is not restricted or limited by the type and structure of the reaction layer.

[0062] For example, the reaction layer may include a membrane electrode assembly (MEA) (not shown) and a porous substrate layer disposed in close contact with two opposite surfaces of the membrane electrode assembly (MEA).

[0063] The membrane electrode assembly can be variously changed in structure and material according to the required conditions and design specifications. The present invention is not limited or restricted by the structure and material of the membrane electrode assembly.

[0064] For example, the membrane electrode assembly may be configured by attaching catalyst electrode layers (eg, an anode layer and a cathode layer) that generate an electrochemical reaction to two opposing surfaces of an electrolyte membrane (eg, a perfluorinated sulfonic acid ionomer-based electrolyte membrane).

[0065] For reference, water supplied to the anode layer (which is an oxidation electrode for water electrolysis) is separated into hydrogen ions (protons), electrons and oxygen. Then, the hydrogen ions move to the cathode layer as a reduction electrode through the electrolyte membrane, and the electrons move to the cathode through an external circuit. In addition, oxygen can be discharged to the anode outlet, and the hydrogen ions and electrons can be converted into hydrogen at the cathode and then the hydrogen can be discharged to the cathode outlet.

[0066] The membrane 20 and the reaction layer (membrane electrode assembly) together can constitute a single unit cell (water electrolysis cell). The membrane 20 can be used to separate and block water (or water and oxygen) on the anode side and hydrogen generated by the reaction layer on the cathode side. The membrane 20 can also be used to ensure the flow path (flow field) of the fluid.

[0067] In addition, the separator 20 may also serve to distribute heat generated from the unit cells to the entire unit cells, and excessively generated heat may be discharged to the outside through water flowing along the separator 20 .

[0068] For reference, in an embodiment of the present invention, the diaphragm 20 is defined as including both an anode diaphragm and a cathode diaphragm, which independently define a flow path (channel) of water (or water and oxygen) and a flow path (channel) of hydrogen in a water electrolysis stack.

[0069] For example, the diaphragm (anode diaphragm) facing one surface of the membrane electrode assembly may define a flow path (channel) for water (or water and oxygen). The diaphragm (cathode diaphragm) facing the other surface of the membrane electrode assembly may define a flow path (channel) for hydrogen.

[0070] The diaphragm 20 may have various structures and be made of various materials according to required conditions and design specifications. The present invention is not limited or restricted by the structure and material of the diaphragm 20.

[0071] For example, the diaphragm 20 may have a substantially quadrilateral plate shape and be made of metal (eg, titanium, stainless steel, Inconel, or aluminum).

[0072] According to another embodiment of the present invention, the diaphragm may be provided in a circular or other shape.The diaphragm may be made of other materials such as graphite or carbon composites.

[0073] The vacuum chamber 110 is configured to define a space (vacuum space) for forming a coating layer on the surface of the diaphragm 20 .

[0074] According to an exemplary embodiment of the present invention, the vacuum chamber 110 is configured to define a vacuum space for performing physical vapor deposition (PVD).

[0075] For reference, physical vapor deposition (PVD) refers to a process of vaporizing a material (target element) (which is to be deposited) in the vacuum chamber 110 and then depositing the vaporized particles onto the diaphragm 20 .

[0076] The vacuum chamber 110 may have various structures having a predetermined processing space (vacuum space) therein. The present invention is not restricted or limited by the size and structure of the vacuum chamber 110 .

[0077] For example, the vacuum chamber 110 may be configured to have a vacuum chamber disposed at its upper end (based on Figure 1 ) in the form of an approximately quadrilateral chamber having an opening portion 112. An exit / entrance portion (not shown) through which the diaphragm (object) 20 exits or enters the vacuum chamber 110 may be provided in a side wall of the vacuum chamber 110.

[0078] For reference, in the present invention, the vacuum chamber 110 may be understood as a concept of a housing or a container that can establish both an atmospheric pressure condition and a processing environment having a condition lower than the atmospheric pressure.

[0079] The vacuum chamber 110 may be made of various materials according to required conditions and design specifications. For example, the inner wall of the vacuum chamber 110 may be made of a typical aluminum (Al) material.

[0080] The susceptor 120 may be disposed in the vacuum chamber 110 , and the diaphragm 20 may be seated on a top surface of the susceptor 120 .

[0081] The base 120 may have various structures on which the diaphragm 20 may be seated. The present invention is not limited or restricted by the structure and shape of the base 120.

[0082] For example, the base 120 may have a substantially circular plate shape. The base 120 may be disposed in the vacuum chamber 110 and configured to be movable upward or downward in an upward / downward direction. For example, the base 120 may be movable in the upward / downward direction by a typical driving device (e.g., a motor).

[0083] In addition, various types of auxiliary equipment may be connected to the vacuum chamber 110. The auxiliary equipment may include a vacuum pump 150 configured to maintain a vacuum in the internal space of the vacuum chamber 110, and a flow controller 170 configured to adjust a supply flow rate of a reactant gas (e.g., at least any one of argon, nitrogen, helium, oxygen, and acetylene) to be supplied into the vacuum chamber 110. The present invention is not limited or restricted by the type and structure of the auxiliary equipment.

[0084] The sputtering target 200 includes a target element 232 and a light emitting element 222 , and is disposed on the vacuum chamber 110 .

[0085] For reference, once the reactant gas is ionized by high energy electrons to sputter the target element 232, the target element 232 can be deposited on the diaphragm 20 and configured to form a coating on the surface of the diaphragm 20. In some embodiments, the reactant gas is ionized by, for example, an ion beam, an electron beam, a magnetron, a thermal evaporator, an arc generator, or a combination thereof.

[0086] Once a portion of the target element 232 is sputtered and consumed, so that the light emitting element 222 is exposed (or exposed) to the ionized reactive gas to be sputtered, this will enable the user to determine the time to replace the sputtering target 200 by checking or monitoring the coating on the surface of the diaphragm 20, the sputtering target 200 and / or the table of the vacuum chamber 110. Due to the light emitting element 222 exposed (or to be exposed) on the sputtering target 200; the light emitting element 222 that has been sputtered and deposited on the surface of the diaphragm 20; or the light emitting element 222 that is sputtered and present in the vacuum chamber 110, the localized sputtering and completion of the target element 232 can enable the user to determine the timing of replacement. This inspection and monitoring process can be completed visually by instrumentation or by any desired method. Preferably, the inspection and monitoring process can be performed visually. A predetermined light emission or color level can be used to stop the sputtering process to minimize contamination of the coating on the surface of the diaphragm 20. For example, when inspecting the sputtering target 200, if the monitored luminescence or color level of the sputtering target 200 exceeds a predetermined luminescence or color level, the sputtering process can be manually or automatically stopped. Similarly, when inspecting the sputtering target 200, if the monitored luminescence or color level of the surface of the diaphragm 20 exceeds a predetermined luminescence or color level, the sputtering process can be manually or automatically stopped. Similarly, for the vacuum chamber 110, if the monitored luminescence or color level of the surface of the vacuum chamber 110 exceeds a predetermined luminescence or color level, the sputtering process can be manually or automatically stopped. In some embodiments, more than one coating on the surface of the diaphragm 20, the sputtering target 200, and / or the vacuum chamber 110 can be monitored simultaneously. The predetermined luminescence or color level can vary or be the same for each inspection.

[0087] The sputtering target 200 may be disposed on the vacuum chamber 110 in various ways according to required conditions and design specifications.

[0088] According to an exemplary embodiment of the present invention, the sputtering target 200 may be configured to cover the opening portion 112 of the vacuum chamber 110 .

[0089] According to another embodiment of the present invention, the sputtering target may be disposed on an inner wall surface of the vacuum chamber. Alternatively, the sputtering target may be disposed in the vacuum chamber via a separate support.

[0090] For reference, in the embodiment of the present invention, there has been described an example in which a single sputtering target 200 is provided on the vacuum chamber 110. However, according to another embodiment of the present invention, two or more sputtering targets may be provided on the vacuum chamber.

[0091] The sputtering target 200 may have various structures including the target element 232 and the light emitting element 222. The present invention is not limited or restricted by the structure of the sputtering target 200.

[0092] In particular, the sputtering target 200 may have a structure in which the light emitting element 222 may be exposed after the target element 232 is consumed to a predetermined level or more.

[0093] According to an exemplary embodiment of the present invention, the sputtering target 200 may include: a base layer 210; a light emitting layer 220 including a light emitting element 222 and stacked on one surface of the base layer 210; and a target layer 230 including a target element 232 and stacked on one surface of the light emitting layer 220 while facing the diaphragm 20.

[0094] The base layer 210 serves to support the light emitting layer 220 and the target layer 230 , cool the sputtering target 200 , and transmit power.

[0095] The base layer 210 may be made of various materials and have various structures according to the required conditions and design specifications. The present invention is not limited or restricted by the structure and material of the base layer 210.

[0096] For example, the base layer 210 may have an approximately circular plate shape and be made of copper.

[0097] In addition, the power source 140 for applying power may be electrically connected to the base layer 210. For example, at least any one of direct current and alternating current may be applied to the base layer 210 by means of the power source 140.

[0098] The light emitting layer 220 includes a light emitting element 222 and is stacked on one surface of the base layer 210 facing the diaphragm 20 (based on Figure 1 on the bottom surface of the device.

[0099] The light emitting layer 220 may have various structures according to required conditions and design specifications. The present invention is not limited or restricted by the structure of the light emitting layer 220.

[0100] For example, the light emitting layer 220 may have a substantially circular plate shape corresponding to the base layer 210 .

[0101] Various materials that are visible and directly recognized by an operator can be used as the light emitting element 222. The present invention is not limited or restricted by the type and nature of the light emitting element 222.

[0102] According to an exemplary embodiment of the present invention, the light emitting element 222 may include at least any one of an ultraviolet sensitive material and a non-ferrous metal.

[0103] In an embodiment of the present invention, the UV-sensitive material may be defined as a material that undergoes a chemical change or reaction when exposed to UV light.

[0104] Various materials that chemically change or react when exposed to ultraviolet light can be used as the ultraviolet sensitive material. The present invention is not limited or restricted by the type and nature of the ultraviolet sensitive material.

[0105] For example, at least any one of silver chloride (AgCl), silver bromide (AgBr), silver iodide (AgI), spirooxazine, spiropyran, lubricant, benzophenone, zinc oxide, and titanium dioxide may be used as the ultraviolet sensitive material.

[0106] Furthermore, in the embodiments of the present invention, non-ferrous metals may be defined as metals having colors other than iron and iron alloys. The present invention is not limited or restricted by the type and nature of non-ferrous metals.

[0107] For example, at least any one of lead (Pb), aluminum (Al), nickel (Ni), magnesium (Mg), tin (Sn), antimony (Sb), zinc (Zn), and titanium (Ti) may be used as the non-ferrous metal.

[0108] The target layer 230 includes a target element 232 and is stacked on one surface of the light emitting layer 220 facing the diaphragm 20 (based on Figure 1 on the bottom surface of the ).

[0109] The target layer 230 may have different structures according to the required conditions and design specifications. The present invention is not limited or restricted by the structure of the target layer 230.

[0110] For example, the target layer 230 may have a substantially circular plate shape corresponding to the light emitting layer 220 .

[0111] Various materials may be used as the target element 232 depending on the desired conditions and design specifications. The present invention is not limited or restricted by the type and nature of the target element 232.

[0112] According to an exemplary embodiment of the present invention, a typical noble metal may be used as the target element 232 .

[0113] According to an exemplary embodiment of the present invention, the target element 232 may include at least any one of platinum (Pt), iridium (Ir), and gold (Au).

[0114] According to an exemplary embodiment of the present invention, the membrane treating apparatus 10 for an electrochemical device may include an insulating member 130 interposed between a target layer 230 and a vacuum chamber 110 .

[0115] The insulating member 130 may be configured to electrically insulate (isolate) the vacuum chamber 110 and the target layer 230. The present invention is not limited or restricted by the structure and material of the insulator member 130.

[0116] For example, the insulating member 130 may have a continuous ring shape. The insulating member 130 may be disposed at an upper end of the vacuum chamber 110 (based on Figure 1 ) is installed on the vacuum chamber 110.

[0117] In the illustrated and previously described embodiments, an example has been described in which the insulator member 130 is mounted on the vacuum chamber 110 through the adapter 160. However, according to another embodiment of the present invention, the insulator member may be directly mounted on the vacuum chamber without a separate adapter.

[0118] Using the above configuration, if Figure 3 As shown, when the deposition process using the sputtering target 200 is repeatedly performed, when the sputtering target 200 reaches the ultimate life, the light emitting layer 220 may be exposed to the outside of the target layer 230. The light emitting element 222 may be deposited on the surface of the diaphragm 20 from the light emitting layer 220 exposed to the outside of the target layer 230.

[0119] Therefore, the operator can simply and accurately detect the life of the sputtering target 200 and the replacement time of the sputtering target 200 by visually identifying whether the light emitting element is exposed from the sputtering target 200 or visually identifying the light emitting element 222 deposited on the diaphragm 20 without using an expensive analysis device.

[0120] According to the embodiment of the present invention described above, it is possible to obtain the effects of improving stability and reliability, and being able to detect the life of a sputtering target and the replacement timing of the sputtering target with high accuracy.

[0121] In particular, according to an embodiment of the present invention, an operator can visually and directly identify the life of a sputtering target and the timing of replacing the sputtering target without using an expensive analysis device. Therefore, the operator can accurately detect the life of the sputtering target and the time to replace the sputtering target, and replace the sputtering target in time.

[0122] Furthermore, according to the embodiments of the present invention, advantageous effects of improving the coating quality of the separator and minimizing coating defects may be obtained.

[0123] In particular, according to the embodiments of the present invention, an advantageous effect of minimizing imbalance and defects of a coating layer caused by local consumption of a sputtering target may be obtained.

[0124] Furthermore, according to the embodiments of the present invention, advantageous effects of simplifying the structure and manufacturing process and reducing the cost can be obtained.

[0125] Although the embodiments have been described above, the embodiments are merely illustrative and are not intended to limit the present invention. It will be appreciated by those skilled in the art that various modifications and applications not described above may be made to the present embodiment without departing from the inherent features of the present embodiment. For example, the various constituent elements specifically described in the embodiments may be modified and then executed. In addition, it should be understood that the differences associated with the modifications and applications are included within the scope of the present invention as defined by the appended claims.

Claims

1. A diaphragm treatment device for an electrochemical device, the diaphragm treatment device comprising: Vacuum chamber; a diaphragm located in the vacuum chamber; as well as A sputtering target is located in the vacuum chamber, and includes a target element and a light emitting element.

2. The diaphragm processing apparatus according to claim 1, wherein the sputtering target comprises: a light-emitting layer, comprising the light-emitting element; as well as A target layer, including the target element, is stacked on the light emitting layer and faces the diaphragm. 3 . The diaphragm processing apparatus according to claim 2 , wherein the sputtering target further comprises a base layer, and wherein the light emitting layer is stacked on the base layer. 4 . The membrane processing apparatus according to claim 1 , further comprising a flow controller configured to adjust a supply flow rate of the reaction gas supplied into the vacuum chamber. 5 . The membrane processing apparatus according to claim 4 , further comprising an ion beam, an electron beam, a magnetron, a thermal evaporator, an arc generator, or a combination thereof.

6. A diaphragm treatment device for an electrochemical device, the diaphragm treatment device comprising: Vacuum chamber; a susceptor disposed in the vacuum chamber and configured to allow a diaphragm to be seated on the susceptor; as well as A sputtering target is disposed on the vacuum chamber and includes a target element configured to be deposited on the diaphragm and a light emitting element.

7. The diaphragm processing apparatus according to claim 6, wherein the sputtering target comprises: Basal layer; a light-emitting layer, comprising the light-emitting element and stacked on the base layer; as well as A target layer, including the target element, is stacked on the light emitting layer and faces the diaphragm.

8. The diaphragm processing device according to claim 7, comprising: An insulator member is interposed between the target layer and the vacuum chamber. 9 . The diaphragm processing apparatus according to claim 6 , wherein an opening portion is provided on one surface of the vacuum chamber facing the diaphragm, and the sputtering target is arranged to cover the opening portion.

10. The membrane processing apparatus of claim 6, wherein the target element comprises a noble metal.

11. The membrane processing apparatus according to claim 6, wherein the target element includes at least any one of platinum, iridium, and gold. 12 . The diaphragm processing device according to claim 6 , wherein the light emitting element comprises at least any one of an ultraviolet sensitive material and a non-ferrous metal. 13 . The membrane processing apparatus according to claim 6 , further comprising a flow controller configured to adjust a supply flow rate of the reaction gas supplied into the vacuum chamber.

14. The membrane processing apparatus according to claim 6, further comprising an ion beam, an electron beam, a magnetron, a thermal evaporator, an arc generator, or a combination thereof.

15. A sputtering target for an object, the sputtering target comprising: Basal layer; a light-emitting layer including a light-emitting element and stacked on the base layer; as well as A target layer includes a target element and is stacked on the light emitting layer facing the object.

16. The sputtering target of claim 15, wherein the target element comprises a noble metal.

17. The sputtering target of claim 15, wherein the target element comprises at least any one of platinum, iridium, and gold. 18 . The sputtering target according to claim 15 , wherein the light emitting element comprises at least any one of an ultraviolet sensitive material and a non-ferrous metal. 19 . The sputtering target according to claim 18 , wherein the ultraviolet sensitive material comprises at least any one of silver chloride, silver bromide, silver iodide, spirooxazine, spiropyran, fulgide, benzophenone, zinc oxide, and titanium dioxide.

20. The sputtering target of claim 18, wherein the non-ferrous material comprises at least any one of lead, aluminum, nickel, magnesium, tin, antimony, zinc, and titanium.

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