Field plate structure optimization method, device, equipment and medium

Abstract

The invention relates to the technical field of semiconductors, in particular to a field plate structure optimization method and device, equipment and a medium, and the method comprises the steps: obtaining an initial field plate structure optimization model; obtaining an electrical performance evaluation parameter before adjustment; obtaining multiple groups of adjustment structure parameters; obtaining adjusted electrical performance evaluation parameters; if the adjusted electrical performance evaluation parameters belong to the target parameter range, taking the initial structure parameters as input, taking the corresponding adjusted structure parameters as output, and training the initial field plate structure optimization model; obtaining structure parameters and device parameters; if the device parameter is matched with the initial device parameter, inputting the structure parameter into a field plate structure optimization model to obtain a target structure parameter; and performing optimization based on the target structure parameters. According to the scheme, the field plate structure can be optimized on the premise of not depending on human experience, so that the performance of the optimized semiconductor device can meet requirements, the optimization efficiency is improved, and the optimization cost is reduced.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a field plate structure optimization method, device, equipment and medium. Background Art

[0002] Power semiconductor devices are key components used in high voltage and high current applications. In recent years, power semiconductor devices have been widely used in energy conversion, automotive electronics, industrial control and other fields. Among them, the industry believes that the performance of power semiconductor devices in high voltage and high frequency applications still has room for improvement, which has prompted researchers to continuously explore various improvement measures, and the field plate structure is one of the important means to improve the performance of power semiconductor devices.

[0003] The field plate structure refers to a metal plate added above the drift region of the device. It reduces the on-resistance of the device and improves the breakdown voltage and stability of the device by adjusting the electric field distribution and reducing the electric field peak. The optimized design of the field plate structure can effectively balance and improve the contradictory relationship between the breakdown voltage and on-resistance of power semiconductor devices, thereby enhancing their stability and reliability under high frequency and high voltage conditions.

[0004] In the related art, when designing power semiconductor devices, it is often necessary to optimize the field plate structure therein to achieve better results. Generally, the designer can optimize the field plate structure based on experience, and then simulate the structural parameters of the optimized field plate structure through simulation software to determine whether the optimized field plate structure meets the requirements. Although this scheme can optimize the field plate structure, it needs to be based on the experience of the simulator, and when the optimized field plate structure does not meet the requirements, the designer needs to repeatedly iterate the design scheme of the field plate structure. The efficiency of optimizing the field plate structure is low, and it consumes more manpower, resulting in a high cost for optimizing the field plate structure. Summary of the invention

[0005] In order to solve the problems in the related art, the embodiments of the present disclosure provide a field plate structure optimization method, device, equipment and medium.

[0006] In a first aspect, an embodiment of the present disclosure provides a method for optimizing a field plate structure, comprising:

[0007] Obtaining an initial field plate structure optimization model;

[0008] Based on the initial device parameters and the initial structural parameters, obtaining electrical performance evaluation parameters of the initial semiconductor device before adjustment, wherein the structural parameters include the length of each step in the field plate structure and the thickness of the oxide under the field plate in each step, and the device parameters include at least one of the doping concentration of the drift region and the length of the drift region;

[0009] Adjusting the initial structural parameters to obtain multiple groups of adjusted structural parameters;

[0010] Based on each set of adjustment structure parameters and the initial device parameters, obtaining adjusted electrical performance evaluation parameters corresponding to each set of adjustment structure parameters;

[0011] If any set of adjusted electrical performance evaluation parameters belongs to the target electrical performance evaluation parameter range, the initial structural parameters are used as input, and the adjusted structural parameters corresponding to any set of adjusted electrical performance evaluation parameters are used as output to train the initial field plate structure optimization model;

[0012] In response to the convergence of the trained initial field plate structure optimization model, determining the trained initial field plate structure optimization model as a field plate structure optimization model corresponding to the initial device parameters;

[0013] Obtaining structural parameters of the midfield structure in the semiconductor device to be optimized and device parameters of the semiconductor device to be optimized;

[0014] If the device parameters match the initial device parameters, the structural parameters are used as inputs to the field plate structure optimization model to obtain target structural parameters output by the field plate structure optimization model;

[0015] The field plate structure in the semiconductor device to be optimized is optimized based on the target structural parameters.

[0016] In one embodiment of the present disclosure, the method further comprises:

[0017] If each set of adjusted electrical performance evaluation parameters does not fall within the target electrical performance evaluation parameter range, then based on the adjusted electrical performance evaluation parameters and the target electrical performance evaluation parameter range, determining at least one set of structural parameters to be adjusted from the multiple sets of adjusted structural parameters;

[0018] Acquire a structural parameter adjustment direction based on at least one set of structural parameters to be adjusted, initial structural parameters, adjusted electrical performance evaluation parameters corresponding to at least one set of structural parameters to be adjusted, and a target electrical performance evaluation parameter range;

[0019] Adjust any group of structural parameters to be adjusted based on the structural parameter adjustment direction to obtain multiple groups of readjusted structural parameters;

[0020] Based on each set of readjusted structural parameters and the initial device parameters, obtaining readjusted electrical performance evaluation parameters corresponding to each set of readjusted structural parameters;

[0021] If any set of readjusted electrical performance evaluation parameters belongs to the target electrical performance evaluation parameter range, the initial structural parameters are used as input, and the readjusted structural parameters corresponding to any set of readjusted electrical performance evaluation parameters are used as output to train the initial field plate structure optimization model;

[0022] In response to the convergence of the trained initial field plate structure optimization model, the trained initial field plate structure optimization model is determined as the field plate structure optimization model corresponding to the initial device parameters.

[0023] In one embodiment of the present disclosure, based on the adjusted electrical performance evaluation parameter and the target electrical performance evaluation parameter range, at least one set of structural parameters to be adjusted is determined from multiple sets of adjustment structural parameters, including:

[0024] Determine the closest boundary value between the target electrical performance evaluation parameter range and the adjusted electrical performance evaluation parameter corresponding to the adjusted structural parameter, and obtain the absolute difference between the boundary value and the adjusted electrical performance evaluation parameter corresponding to the adjusted structural parameter;

[0025] At least one set of adjustment structural parameters with the smallest corresponding absolute difference is determined as at least one set of structural parameters to be adjusted.

[0026] In one embodiment of the present disclosure, the electrical performance evaluation parameter includes at least one of a breakdown voltage, a specific on-resistance, and a quality factor.

[0027] In one embodiment of the present disclosure, the target electrical performance evaluation parameter range includes: the breakdown voltage is greater than the target breakdown voltage threshold BV0, the specific on-resistance is less than the target specific on-resistance Ron,sp0, and the quality factor is greater than the quality factor threshold FOM0;

[0028] The structural parameter adjustment direction is obtained based on at least one set of structural parameters to be adjusted, initial structural parameters, adjusted electrical performance evaluation parameters corresponding to at least one set of structural parameters to be adjusted, and a target electrical performance evaluation parameter range, including:

[0029] based on Obtaining a first adaptation function value F(x)1 corresponding to each group of structural parameters to be adjusted, wherein BV1 is a breakdown voltage in the electrical performance evaluation parameter after adjustment;

[0030] based on Obtaining a second adaptation function value F(x)2 corresponding to each group of structural parameters to be adjusted, wherein Ron, sp1 is the specific on-resistance in the electrical performance evaluation parameter after adjustment;

[0031] based on Obtaining a third adaptation function value F(x)3 corresponding to each group of structural parameters to be adjusted, wherein FOM1 is a quality factor in the electrical performance evaluation parameter after adjustment;

[0032] Determine, in at least one group of structural parameters to be adjusted, at least one of the first adaptation function value F(x)1, the second adaptation function value F(x)2, and the third adaptation function value F(x)3 that is the minimum target structural parameter to be adjusted;

[0033] Based on the difference between the target structural parameters to be adjusted and the initial structural parameters, the structural parameter adjustment direction is determined.

[0034] In a second aspect, an embodiment of the present disclosure provides a field plate structure optimization device, comprising:

[0035] The optimization model acquisition module is configured to acquire an initial field plate structure optimization model; based on initial device parameters and initial structural parameters, acquire electrical performance evaluation parameters of the initial semiconductor device before adjustment, wherein the structural parameters include the length of each step in the field plate structure and the thickness of the oxide under the field plate in each step, and the device parameters include at least one of the doping concentration of the drift region and the length of the drift region; adjust the initial structural parameters to acquire multiple groups of adjusted structural parameters; based on each group of adjusted structural parameters and the initial device parameters, acquire adjusted electrical performance evaluation parameters corresponding to each group of adjusted structural parameters; if any group of adjusted electrical performance evaluation parameters belongs to the target electrical performance evaluation parameter range, the initial structural parameters are used as input, and the adjusted structural parameters corresponding to any group of adjusted electrical performance evaluation parameters are used as output to train the initial field plate structure optimization model; in response to the convergence of the trained initial field plate structure optimization model, the trained initial field plate structure optimization model is determined as the field plate structure optimization model corresponding to the initial device parameters;

[0036] The device parameter acquisition module is configured to acquire structural parameters of the field plate structure in the semiconductor device to be optimized and device parameters of the semiconductor device, wherein the structural parameters include the length of each step in the field plate structure and the thickness of the oxide under the field plate in each step, and the device parameters include at least one of the doping concentration of the drift region and the length of the drift region:

[0037] The optimization parameter acquisition module is configured to input the structural parameters as input into the field plate structure optimization model if the device parameters match the initial device parameters, so as to obtain the target structural parameters output by the field plate structure optimization model;

[0038] The field plate structure optimization module is configured to optimize the field plate structure in the semiconductor device to be optimized based on the target structure parameters.

[0039] In one embodiment of the present disclosure, the optimization model acquisition module is further configured to:

[0040] If each set of adjusted electrical performance evaluation parameters does not fall within the target electrical performance evaluation parameter range, then based on the adjusted electrical performance evaluation parameters and the target electrical performance evaluation parameter range, determining at least one set of structural parameters to be adjusted from the multiple sets of adjusted structural parameters;

[0041] Acquire a structural parameter adjustment direction based on at least one set of structural parameters to be adjusted, initial structural parameters, adjusted electrical performance evaluation parameters corresponding to at least one set of structural parameters to be adjusted, and a target electrical performance evaluation parameter range;

[0042] Adjust any group of structural parameters to be adjusted based on the structural parameter adjustment direction to obtain multiple groups of readjusted structural parameters;

[0043] Based on each set of readjusted structural parameters and the initial device parameters, obtaining readjusted electrical performance evaluation parameters corresponding to each set of readjusted structural parameters;

[0044] If any set of readjusted electrical performance evaluation parameters belongs to the target electrical performance evaluation parameter range, the initial structural parameters are used as input, and the readjusted structural parameters corresponding to any set of readjusted electrical performance evaluation parameters are used as output to train the initial field plate structure optimization model;

[0045] In response to the convergence of the trained initial field plate structure optimization model, the trained initial field plate structure optimization model is determined as the field plate structure optimization model corresponding to the initial device parameters.

[0046] In one embodiment of the present disclosure, the optimization model acquisition module is specifically configured as follows:

[0047] Determine the closest boundary value between the target electrical performance evaluation parameter range and the adjusted electrical performance evaluation parameter corresponding to the adjusted structural parameter, and obtain the absolute difference between the boundary value and the adjusted electrical performance evaluation parameter corresponding to the adjusted structural parameter;

[0048] At least one set of adjustment structural parameters with the smallest corresponding absolute difference is determined as at least one set of structural parameters to be adjusted.

[0049] In one embodiment of the present disclosure, the electrical performance evaluation parameter includes at least one of a breakdown voltage, a specific on-resistance, and a quality factor.

[0050] In one embodiment of the present disclosure, the target electrical performance evaluation parameter range includes: the breakdown voltage is greater than the target breakdown voltage threshold BV0, the specific on-resistance is less than the target specific on-resistance Ron,sp0, and the quality factor is greater than the quality factor threshold FOM n ;

[0051] The optimization model acquisition module is specifically configured as follows:

[0052] based on Obtaining a first adaptation function value F(x)1 corresponding to each group of structural parameters to be adjusted, wherein BV1 is a breakdown voltage in the electrical performance evaluation parameter after adjustment;

[0053] based on Obtaining a second adaptation function value F(x)2 corresponding to each group of structural parameters to be adjusted, wherein Ron, sp1 is the specific on-resistance in the electrical performance evaluation parameter after adjustment;

[0054] based on Obtaining a third adaptation function value F(x)3 corresponding to each group of structural parameters to be adjusted, wherein FOM1 is a quality factor in the electrical performance evaluation parameter after adjustment;

[0055] Determine, in at least one group of structural parameters to be adjusted, at least one of the first adaptation function value F(x)1, the second adaptation function value F(x)2, and the third adaptation function value F(x)3 that is the minimum target structural parameter to be adjusted;

[0056] Based on the difference between the target structural parameters to be adjusted and the initial structural parameters, the structural parameter adjustment direction is determined.

[0057] In a third aspect, an embodiment of the present disclosure provides an electronic device, comprising a memory and a processor, wherein the memory is used to store one or more computer instructions, and wherein the one or more computer instructions are executed by the processor to implement a method as described in any one of the first aspects.

[0058] In a fourth aspect, an embodiment of the present disclosure provides a computer-readable storage medium on which computer instructions are stored. When the computer instructions are executed by a processor, a method as described in any one of the first aspects is implemented.

[0059] According to the technical solution provided by the embodiment of the present disclosure, an initial field plate structure optimization model is obtained; based on the initial device parameters and the initial structural parameters, the electrical performance evaluation parameters of the initial semiconductor device before adjustment are obtained, wherein the structural parameters include the length of each step in the field plate structure and the thickness of the oxide under the field plate in each step, and the device parameters include at least one of the doping concentration of the drift region and the length of the drift region; the initial structural parameters are adjusted to obtain multiple groups of adjusted structural parameters; based on each group of adjusted structural parameters and the initial device parameters, the adjusted electrical performance evaluation parameters corresponding to each group of adjusted structural parameters are obtained; if any group of adjusted electrical performance evaluation parameters belongs to the target electrical performance evaluation parameter range, the electrical performance evaluation parameters after adjustment are obtained. range, the initial structural parameters are used as input, and the adjusted structural parameters corresponding to any set of adjusted electrical performance evaluation parameters are used as output to train the initial field plate structure optimization model; in response to the convergence of the trained initial field plate structure optimization model, the trained initial field plate structure optimization model is determined as the field plate structure optimization model corresponding to the initial device parameters; the structural parameters of the field plate structure in the semiconductor device to be optimized and the device parameters of the semiconductor device to be optimized are obtained; if the device parameters match the initial device parameters, the structural parameters are used as input to the field plate structure optimization model to obtain the target structural parameters output by the field plate structure optimization model; the field plate structure in the semiconductor device to be optimized is optimized based on the target structural parameters. This solution can optimize the field plate structure in the semiconductor device without relying on the experience of the designer to ensure that the optimized semiconductor device can meet the requirements, improve the efficiency of optimizing the field plate structure, and reduce the cost of optimizing the field plate structure.

[0060] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0061] Other features, objectives and advantages of the present disclosure will become more apparent through the following detailed description of non-limiting embodiments in conjunction with the accompanying drawings. In the accompanying drawings:

[0062] Figure 1 A flow chart of a field plate structure optimization method according to an embodiment of the present disclosure is shown.

[0063] Figure 2 A schematic structural diagram of a field plate structure according to an embodiment of the present disclosure is shown.

[0064] Figure 3 A structural block diagram of a field plate structure optimization device according to an embodiment of the present disclosure is shown.

[0065] Figure 4 A structural block diagram of an electronic device according to an embodiment of the present disclosure is shown.

[0066] Figure 5 A schematic diagram showing the structure of a computer system suitable for implementing the method according to an embodiment of the present disclosure is shown. DETAILED DESCRIPTION

[0067] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement them. In addition, for the sake of clarity, parts not related to the description of the exemplary embodiments are omitted in the accompanying drawings.

[0068] In the present disclosure, it should be understood that terms such as "include" or "have" are intended to indicate the presence of features, numbers, steps, behaviors, components, parts, or a combination thereof disclosed in the present specification, and are not intended to exclude the possibility that one or more other features, numbers, steps, behaviors, components, parts, or a combination thereof exist or are added.

[0069] It should also be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present disclosure may be combined with each other. The present disclosure will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0070] In the present disclosure, if it involves operations of obtaining user information or user data or displaying user information or user data to others, the operations are all authorized and confirmed by the user, or actively selected by the user.

[0071] In the related art, when designing power semiconductor devices, it is often necessary to optimize the field plate structure therein to achieve better results. Generally, designers can optimize the field plate structure based on experience, and then simulate the structural parameters of the optimized field plate structure through simulation software to determine whether the optimized field plate structure meets the requirements.

[0072] However, the applicant found that although the above scheme can optimize the field plate structure of the power semiconductor device, it needs to be based on the experience of the simulation personnel, and when the optimized field plate structure does not meet the requirements, the designer needs to repeatedly iterate the design scheme of the power semiconductor device. The efficiency of optimizing the power semiconductor device is low and it consumes more manpower, resulting in a high cost for optimizing the power semiconductor device.

[0073] In order to solve the above problems, embodiments of the present disclosure provide a field plate structure optimization method, device, equipment and medium.

[0074] According to the technical solution provided by the embodiment of the present disclosure, an initial field plate structure optimization model is obtained; based on the initial device parameters and the initial structural parameters, the electrical performance evaluation parameters of the initial semiconductor device before adjustment are obtained, wherein the structural parameters include the length of each step in the field plate structure and the thickness of the oxide under the field plate in each step, and the device parameters include at least one of the doping concentration of the drift region and the length of the drift region; the initial structural parameters are adjusted to obtain multiple groups of adjusted structural parameters; based on each group of adjusted structural parameters and the initial device parameters, the adjusted electrical performance evaluation parameters corresponding to each group of adjusted structural parameters are obtained; if any group of adjusted electrical performance evaluation parameters belongs to the target electrical performance evaluation parameter range, the electrical performance evaluation parameters after adjustment are obtained. range, the initial structural parameters are used as input, and the adjusted structural parameters corresponding to any set of adjusted electrical performance evaluation parameters are used as output to train the initial field plate structure optimization model; in response to the convergence of the trained initial field plate structure optimization model, the trained initial field plate structure optimization model is determined as the field plate structure optimization model corresponding to the initial device parameters; the structural parameters of the field plate structure in the semiconductor device to be optimized and the device parameters of the semiconductor device to be optimized are obtained; if the device parameters match the initial device parameters, the structural parameters are used as input to the field plate structure optimization model to obtain the target structural parameters output by the field plate structure optimization model; the field plate structure in the semiconductor device to be optimized is optimized based on the target structural parameters. This solution can optimize the field plate structure in the semiconductor device without relying on the experience of the designer to ensure that the optimized semiconductor device can meet the requirements, improve the efficiency of optimizing the field plate structure, and reduce the cost of optimizing the field plate structure.

[0075] Figure 1 FIG. 1 is a flow chart showing a method for optimizing a field plate structure according to an embodiment of the present disclosure. Figure 1 As shown, the field plate structure optimization method includes the following steps S101-S109:

[0076] In step S101, an initial field plate structure optimization model is obtained;

[0077] In step S102, based on the initial device parameters and the initial structural parameters, the electrical performance evaluation parameters of the initial semiconductor device before adjustment are obtained;

[0078] The structural parameters include the length of each step in the field plate structure and the thickness of the oxide under the field plate in each step, and the device parameters include at least one of the doping concentration of the drift region and the length of the drift region;

[0079] In step S103, the initial structural parameters are adjusted to obtain multiple groups of adjusted structural parameters;

[0080] In step S104, based on each set of adjustment structure parameters and the initial device parameters, the adjusted electrical performance evaluation parameters corresponding to each set of adjustment structure parameters are obtained;

[0081] In step S105, if any set of adjusted electrical performance evaluation parameters belongs to the target electrical performance evaluation parameter range, the initial structural parameters are used as input, and the adjusted structural parameters corresponding to any set of adjusted electrical performance evaluation parameters are used as output to train the initial field plate structure optimization model;

[0082] In step S106, in response to the convergence of the trained initial field plate structure optimization model, the trained initial field plate structure optimization model is determined as a field plate structure optimization model corresponding to the initial device parameters;

[0083] In step S107, the structural parameters of the field board structure in the semiconductor device to be optimized and the device parameters of the semiconductor device to be optimized are obtained;

[0084] In step S108, if the device parameters match the initial device parameters, the structural parameters are used as inputs to the field plate structure optimization model to obtain target structural parameters output by the field plate structure optimization model;

[0085] In step S109 , the field plate structure in the semiconductor device to be optimized is optimized based on the target structural parameters.

[0086] In one implementation of the present disclosure, structural parameters of a field board structure in a semiconductor device and device parameters of the semiconductor device are obtained. The structural parameters and device parameters can be obtained based on design data of the semiconductor device, or the actual semiconductor device can be measured to obtain the structural parameters and device parameters.

[0087] For example, Figure 2 A schematic structural diagram of a field plate structure according to an embodiment of the present disclosure is shown, Figure 2 As shown, the field plate structure is located on the surface of the semiconductor device 200, and the field plate structure includes a stepped field plate 201 and an oxide 202 located below the field plate 201. The structural parameters include the length of each step in the field plate structure, namely, step length 211, step length 221 and step length 231; the structural parameters also include the thickness of the oxide 202 located below the field plate 201 in each step, namely, thickness 212, thickness 222 and thickness 232.

[0088] In one implementation of the present disclosure, the drift region of a semiconductor device may be understood as a carrier concentration gradient region caused by doping elements in the semiconductor device.

[0089] In one implementation of the present disclosure, the field plate structure optimization model may be a neural network (NN) model, a convolutional neural network (CNN) model, or a long short-term memory network (LSTM) model, etc.

[0090] In one implementation of the present disclosure, obtaining electrical performance evaluation parameters of a semiconductor device before adjustment based on device parameters and initial structural parameters can be understood as performing simulation based on the device parameters and initial structural parameters, and obtaining electrical performance evaluation parameters of the semiconductor device before adjustment based on the simulation results; it can also be understood as manufacturing a corresponding semiconductor device based on the device parameters and initial structural parameters, and testing the manufactured semiconductor device, and obtaining electrical performance evaluation parameters of the semiconductor device before adjustment based on actual test results.

[0091] Similarly, based on each set of adjustment structural parameters and device parameters, the adjusted electrical performance evaluation parameters corresponding to each set of adjustment structural parameters are obtained. This can be understood as performing simulation based on the device parameters and the adjustment structural parameters, and obtaining the adjusted electrical performance evaluation parameters of the semiconductor device according to the simulation results; it can also be understood as manufacturing corresponding semiconductor devices based on the device parameters and the adjustment structural parameters, and testing the manufactured semiconductor devices, and obtaining the adjusted electrical performance evaluation parameters of the semiconductor device according to the actual test results.

[0092] In one implementation of the present disclosure, the initial structural parameters are adjusted to obtain multiple groups of adjusted structural parameters, which can be understood as randomly adjusting the initial structural parameters within a preset range of structural parameter values; it can also be understood as adjusting the initial structural parameters based on a pre-acquired algorithm.

[0093] In one implementation of the present disclosure, optimizing the field plate structure in a semiconductor device based on target structural parameters can be understood as updating the structural parameters in the design data of the semiconductor device to the target structural parameters, or can be understood as modifying the actual semiconductor device based on the target structural parameters.

[0094] According to the technical solution provided by the embodiment of the present disclosure, an initial field plate structure optimization model is obtained; based on the initial device parameters and the initial structural parameters, the electrical performance evaluation parameters of the initial semiconductor device before adjustment are obtained, wherein the structural parameters include the length of each step in the field plate structure and the thickness of the oxide under the field plate in each step, and the device parameters include at least one of the doping concentration of the drift region and the length of the drift region; the initial structural parameters are adjusted to obtain multiple groups of adjusted structural parameters; based on each group of adjusted structural parameters and the initial device parameters, the adjusted electrical performance evaluation parameters corresponding to each group of adjusted structural parameters are obtained; if any group of adjusted electrical performance evaluation parameters belongs to the target electrical performance evaluation parameter range, the electrical performance evaluation parameters after adjustment are obtained. range, the initial structural parameters are used as input, and the adjusted structural parameters corresponding to any set of adjusted electrical performance evaluation parameters are used as output to train the initial field plate structure optimization model; in response to the convergence of the trained initial field plate structure optimization model, the trained initial field plate structure optimization model is determined as the field plate structure optimization model corresponding to the initial device parameters; the structural parameters of the field plate structure in the semiconductor device to be optimized and the device parameters of the semiconductor device to be optimized are obtained; if the device parameters match the initial device parameters, the structural parameters are used as input to the field plate structure optimization model to obtain the target structural parameters output by the field plate structure optimization model; the field plate structure in the semiconductor device to be optimized is optimized based on the target structural parameters. This solution can optimize the field plate structure in the semiconductor device without relying on the experience of the designer to ensure that the optimized semiconductor device can meet the requirements, improve the efficiency of optimizing the field plate structure, and reduce the cost of optimizing the field plate structure.

[0095] In one embodiment of the present disclosure, the method further comprises:

[0096] If each set of adjusted electrical performance evaluation parameters does not fall within the target electrical performance evaluation parameter range, then based on the adjusted electrical performance evaluation parameters and the target electrical performance evaluation parameter range, determining at least one set of structural parameters to be adjusted from the multiple sets of adjusted structural parameters;

[0097] Acquire a structural parameter adjustment direction based on at least one set of structural parameters to be adjusted, initial structural parameters, adjusted electrical performance evaluation parameters corresponding to at least one set of structural parameters to be adjusted, and a target electrical performance evaluation parameter range;

[0098] Adjust any group of structural parameters to be adjusted based on the structural parameter adjustment direction to obtain multiple groups of readjusted structural parameters;

[0099] Based on each set of readjusted structural parameters and the initial device parameters, obtaining readjusted electrical performance evaluation parameters corresponding to each set of readjusted structural parameters;

[0100] If any set of readjusted electrical performance evaluation parameters belongs to the target electrical performance evaluation parameter range, the initial structural parameters are used as input, and the readjusted structural parameters corresponding to any set of readjusted electrical performance evaluation parameters are used as output to train the initial field plate structure optimization model;

[0101] In response to the convergence of the trained initial field plate structure optimization model, the trained initial field plate structure optimization model is determined as the field plate structure optimization model corresponding to the initial device parameters.

[0102] According to the technical solution provided by the embodiment of the present disclosure, when each group of adjusted electrical performance evaluation parameters does not fall within the target electrical performance evaluation parameter range, at least one group of structural parameters to be adjusted is determined from multiple groups of adjustment structural parameters based on the adjusted electrical performance evaluation parameters and the target electrical performance evaluation parameter range; a structural parameter adjustment direction is obtained based on at least one group of structural parameters to be adjusted, the initial structural parameters, the adjusted electrical performance evaluation parameters corresponding to at least one group of structural parameters to be adjusted, and the target electrical performance evaluation parameter range; any group of structural parameters to be adjusted is adjusted based on the structural parameter adjustment direction to obtain multiple groups of structural parameters to be adjusted. Adjust the structural parameters; based on each set of readjusted structural parameters and the initial device parameters, obtain the readjusted electrical performance evaluation parameters corresponding to each set of readjusted structural parameters; if any set of readjusted electrical performance evaluation parameters belongs to the target electrical performance evaluation parameter range, use the initial structural parameters as input, use the readjusted structural parameters corresponding to any set of readjusted electrical performance evaluation parameters as output, and train the initial field plate structure optimization model; in response to the convergence of the trained initial field plate structure optimization model, determine the trained initial field plate structure optimization model as the field plate structure optimization model corresponding to the initial device parameters. The above scheme can adjust the structural parameters to be adjusted again when each set of adjusted electrical performance evaluation parameters does not belong to the target electrical performance evaluation parameter range, so as to ensure that the readjusted structural parameters that meet the conditions, that is, the corresponding readjusted electrical performance evaluation parameters belong to the target electrical performance evaluation parameter range, can be obtained, so as to train the initial field plate structure optimization model according to the initial structural parameters and the readjusted structural parameters, thereby improving the efficiency of training the field plate structure optimization model and reducing the training cost.

[0103] In one embodiment of the present disclosure, based on the adjusted electrical performance evaluation parameter and the target electrical performance evaluation parameter range, at least one set of structural parameters to be adjusted is determined from multiple sets of adjustment structural parameters, including:

[0104] Determine the closest boundary value between the target electrical performance evaluation parameter range and the adjusted electrical performance evaluation parameter corresponding to the adjusted structural parameter, and obtain the absolute difference between the boundary value and the adjusted electrical performance evaluation parameter corresponding to the adjusted structural parameter;

[0105] At least one set of adjustment structural parameters with the smallest corresponding absolute difference is determined as at least one set of structural parameters to be adjusted.

[0106] According to the technical solution provided by the embodiments of the present disclosure, by determining the boundary value closest to the target electrical performance evaluation parameter range and the adjusted electrical performance evaluation parameter corresponding to the adjustment structure parameter, and obtaining the absolute difference between the boundary value and the adjusted electrical performance evaluation parameter corresponding to the adjustment structure parameter; determining at least one group of adjustment structure parameters with the smallest corresponding absolute difference as at least one group of structural parameters to be adjusted, it can be improved that after any group of structural parameters to be adjusted are adjusted based on the structural parameter adjustment direction, the re-adjusted electrical performance evaluation parameters corresponding to the re-adjusted structural parameters belong to the target electrical performance evaluation parameter range, thereby accelerating the speed of obtaining the structural parameters whose corresponding electrical performance evaluation parameters belong to the target electrical performance evaluation parameter range, which helps to speed up the training speed and reduce the training cost.

[0107] In one embodiment of the present disclosure, the electrical performance evaluation parameter includes at least one of a breakdown voltage, a specific on-resistance, and a quality factor.

[0108] In one embodiment of the present disclosure, the target electrical performance evaluation parameter range includes: the breakdown voltage is greater than the target breakdown voltage threshold BV0, the specific on-resistance is less than the target specific on-resistance Ron, sp n , and the quality factor is greater than the quality factor threshold FOM n ;

[0109] The structural parameter adjustment direction is obtained based on at least one set of structural parameters to be adjusted, initial structural parameters, adjusted electrical performance evaluation parameters corresponding to at least one set of structural parameters to be adjusted, and a target electrical performance evaluation parameter range, including:

[0110] based on Obtaining a first adaptation function value F(x)1 corresponding to each group of structural parameters to be adjusted, wherein BV1 is a breakdown voltage in the electrical performance evaluation parameter after adjustment;

[0111] based on Obtaining a second adaptation function value F(x)2 corresponding to each group of structural parameters to be adjusted, wherein Ron, sp1 is the specific on-resistance in the electrical performance evaluation parameter after adjustment;

[0112] based on Obtaining a third adaptation function value F(x)3 corresponding to each group of structural parameters to be adjusted, wherein FOM1 is a quality factor in the electrical performance evaluation parameter after adjustment;

[0113] Determine, in at least one group of structural parameters to be adjusted, at least one of the first adaptation function value F(x)1, the second adaptation function value F(x)2, and the third adaptation function value F(x)3 that is the minimum target structural parameter to be adjusted;

[0114] Based on the difference between the target structural parameters to be adjusted and the initial structural parameters, the structural parameter adjustment direction is determined.

[0115] In one embodiment of the present disclosure, the structural parameter adjustment direction is determined based on the difference between the target structural parameter to be adjusted and the initial structural parameter. It can be understood that if the target structural parameter to be adjusted is greater than the initial structural parameter, the direction of expanding the target structural parameter to be adjusted is determined as the structural parameter adjustment direction.

[0116] According to the technical solution provided in the embodiment of the present disclosure, through the above-mentioned solution, the accuracy of obtaining the adjustment direction of the structural parameters can be improved, and after adjusting any group of structural parameters to be adjusted based on the structural parameter adjustment direction, the readjusted electrical performance evaluation parameters corresponding to the adjusted structural parameters can be within the target electrical performance evaluation parameter range, thereby accelerating the speed of obtaining the structural parameters whose corresponding electrical performance evaluation parameters belong to the target electrical performance evaluation parameter range, which helps to speed up the training speed and reduce the training cost.

[0117] Figure 3 The structural block diagram of the field plate structure optimization device according to the embodiment of the present disclosure is shown. The device can be implemented as part or all of the electronic device through software, hardware or a combination of both.

[0118] like Figure 3 As shown, the field plate structure optimization device 300 includes:

[0119] The optimization model acquisition module 301 is configured to acquire an initial field plate structure optimization model; based on initial device parameters and initial structural parameters, acquire electrical performance evaluation parameters of the initial semiconductor device before adjustment, wherein the structural parameters include the length of each step in the field plate structure and the thickness of the oxide under the field plate in each step, and the device parameters include at least one of the doping concentration of the drift region and the length of the drift region; adjust the initial structural parameters to acquire multiple groups of adjusted structural parameters; based on each group of adjusted structural parameters and the initial device parameters, acquire adjusted electrical performance evaluation parameters corresponding to each group of adjusted structural parameters; if any group of adjusted electrical performance evaluation parameters belongs to the target electrical performance evaluation parameter range, the initial structural parameters are used as input, and the adjusted structural parameters corresponding to any group of adjusted electrical performance evaluation parameters are used as output to train the initial field plate structure optimization model; in response to the convergence of the trained initial field plate structure optimization model, the trained initial field plate structure optimization model is determined as the field plate structure optimization model corresponding to the initial device parameters;

[0120] The device parameter acquisition module 302 is configured to acquire structural parameters of the field plate structure in the semiconductor device to be optimized and device parameters of the semiconductor device, wherein the structural parameters include the length of each step in the field plate structure and the thickness of the oxide under the field plate in each step, and the device parameters include at least one of the doping concentration of the drift region and the length of the drift region;

[0121] The optimization parameter acquisition module 303 is configured to input the structural parameters as input into the field plate structure optimization model if the device parameters match the initial device parameters, so as to obtain the target structural parameters output by the field plate structure optimization model;

[0122] The field plate structure optimization module 304 is configured to optimize the field plate structure in the semiconductor device to be optimized based on the target structure parameters.

[0123] In one embodiment of the present disclosure, the optimization model acquisition module 301 is further configured to:

[0124] If each set of adjusted electrical performance evaluation parameters does not fall within the target electrical performance evaluation parameter range, then based on the adjusted electrical performance evaluation parameters and the target electrical performance evaluation parameter range, determining at least one set of structural parameters to be adjusted from the multiple sets of adjusted structural parameters;

[0125] Acquire a structural parameter adjustment direction based on at least one set of structural parameters to be adjusted, initial structural parameters, adjusted electrical performance evaluation parameters corresponding to at least one set of structural parameters to be adjusted, and a target electrical performance evaluation parameter range;

[0126] Adjust any group of structural parameters to be adjusted based on the structural parameter adjustment direction to obtain multiple groups of readjusted structural parameters;

[0127] Based on each set of readjusted structural parameters and the initial device parameters, obtaining readjusted electrical performance evaluation parameters corresponding to each set of readjusted structural parameters;

[0128] If any set of readjusted electrical performance evaluation parameters belongs to the target electrical performance evaluation parameter range, the initial structural parameters are used as input, and the readjusted structural parameters corresponding to any set of readjusted electrical performance evaluation parameters are used as output to train the initial field plate structure optimization model;

[0129] In response to the convergence of the trained initial field plate structure optimization model, the trained initial field plate structure optimization model is determined as the field plate structure optimization model corresponding to the initial device parameters.

[0130] In one embodiment of the present disclosure, the optimization model acquisition module 301 is specifically configured as follows:

[0131] Determine the closest boundary value between the target electrical performance evaluation parameter range and the adjusted electrical performance evaluation parameter corresponding to the adjusted structural parameter, and obtain the absolute difference between the boundary value and the adjusted electrical performance evaluation parameter corresponding to the adjusted structural parameter;

[0132] At least one set of adjustment structural parameters with the smallest corresponding absolute difference is determined as at least one set of structural parameters to be adjusted.

[0133] In one embodiment of the present disclosure, the electrical performance evaluation parameter includes at least one of a breakdown voltage, a specific on-resistance, and a quality factor.

[0134] In one embodiment of the present disclosure, the target electrical performance evaluation parameter range includes: the breakdown voltage is greater than the target breakdown voltage threshold BV0, the specific on-resistance is less than the target specific on-resistance Ron,sp0, and the quality factor is greater than the quality factor threshold FOM0;

[0135] The optimization model acquisition module 301 is specifically configured as follows:

[0136] based on Obtaining a first adaptation function value F(x)1 corresponding to each group of structural parameters to be adjusted, wherein BV1 is a breakdown voltage in the electrical performance evaluation parameter after adjustment;

[0137] based on Obtaining a second adaptation function value F(x)2 corresponding to each group of structural parameters to be adjusted, wherein Ron, sp1 is the specific on-resistance in the electrical performance evaluation parameter after adjustment;

[0138] based on Obtaining a third adaptation function value F(x)3 corresponding to each group of structural parameters to be adjusted, wherein FOM1 is a quality factor in the electrical performance evaluation parameter after adjustment;

[0139] Determine, in at least one group of structural parameters to be adjusted, at least one of the first adaptation function value F(x)1, the second adaptation function value F(x)2, and the third adaptation function value F(x)3 that is the minimum target structural parameter to be adjusted;

[0140] Based on the difference between the target structural parameters to be adjusted and the initial structural parameters, the structural parameter adjustment direction is determined.

[0141] According to the technical solution provided by the embodiment of the present disclosure, an initial field plate structure optimization model is obtained; based on the initial device parameters and the initial structural parameters, the electrical performance evaluation parameters of the initial semiconductor device before adjustment are obtained, wherein the structural parameters include the length of each step in the field plate structure and the thickness of the oxide under the field plate in each step, and the device parameters include at least one of the doping concentration of the drift region and the length of the drift region; the initial structural parameters are adjusted to obtain multiple groups of adjusted structural parameters; based on each group of adjusted structural parameters and the initial device parameters, the adjusted electrical performance evaluation parameters corresponding to each group of adjusted structural parameters are obtained; if any group of adjusted electrical performance evaluation parameters belongs to the target electrical performance evaluation parameter range, the electrical performance evaluation parameters after adjustment are obtained. range, the initial structural parameters are used as input, and the adjusted structural parameters corresponding to any set of adjusted electrical performance evaluation parameters are used as output to train the initial field plate structure optimization model; in response to the convergence of the trained initial field plate structure optimization model, the trained initial field plate structure optimization model is determined as the field plate structure optimization model corresponding to the initial device parameters; the structural parameters of the field plate structure in the semiconductor device to be optimized and the device parameters of the semiconductor device to be optimized are obtained; if the device parameters match the initial device parameters, the structural parameters are used as input to the field plate structure optimization model to obtain the target structural parameters output by the field plate structure optimization model; the field plate structure in the semiconductor device to be optimized is optimized based on the target structural parameters. This solution can optimize the field plate structure in the semiconductor device without relying on the experience of the designer to ensure that the optimized semiconductor device can meet the requirements, improve the efficiency of optimizing the field plate structure, and reduce the cost of optimizing the field plate structure.

[0142] The present disclosure also discloses an electronic device, Figure 4 A structural block diagram of an electronic device according to an embodiment of the present disclosure is shown.

[0143] like Figure 4As shown, the electronic device includes a memory and a processor, wherein the memory is used to store one or more computer instructions, wherein the one or more computer instructions are executed by the processor to implement the method according to an embodiment of the present disclosure.

[0144] The present disclosure provides a method for optimizing a field plate structure, comprising:

[0145] Obtaining an initial field plate structure optimization model;

[0146] Based on the initial device parameters and the initial structural parameters, obtaining electrical performance evaluation parameters of the initial semiconductor device before adjustment, wherein the structural parameters include the length of each step in the field plate structure and the thickness of the oxide under the field plate in each step, and the device parameters include at least one of the doping concentration of the drift region and the length of the drift region;

[0147] Adjusting the initial structural parameters to obtain multiple groups of adjusted structural parameters;

[0148] Based on each set of adjustment structure parameters and the initial device parameters, obtaining adjusted electrical performance evaluation parameters corresponding to each set of adjustment structure parameters;

[0149] If any set of adjusted electrical performance evaluation parameters belongs to the target electrical performance evaluation parameter range, the initial structural parameters are used as input, and the adjusted structural parameters corresponding to any set of adjusted electrical performance evaluation parameters are used as output to train the initial field plate structure optimization model;

[0150] In response to the convergence of the trained initial field plate structure optimization model, determining the trained initial field plate structure optimization model as a field plate structure optimization model corresponding to the initial device parameters;

[0151] Obtaining structural parameters of the midfield structure in the semiconductor device to be optimized and device parameters of the semiconductor device to be optimized;

[0152] If the device parameters match the initial device parameters, the structural parameters are used as inputs to the field plate structure optimization model to obtain target structural parameters output by the field plate structure optimization model;

[0153] The field plate structure in the semiconductor device to be optimized is optimized based on the target structural parameters.

[0154] In one embodiment of the present disclosure, the method further comprises:

[0155] If each set of adjusted electrical performance evaluation parameters does not fall within the target electrical performance evaluation parameter range, then based on the adjusted electrical performance evaluation parameters and the target electrical performance evaluation parameter range, determining at least one set of structural parameters to be adjusted from the multiple sets of adjusted structural parameters;

[0156] Acquire a structural parameter adjustment direction based on at least one set of structural parameters to be adjusted, initial structural parameters, adjusted electrical performance evaluation parameters corresponding to at least one set of structural parameters to be adjusted, and a target electrical performance evaluation parameter range;

[0157] Adjust any group of structural parameters to be adjusted based on the structural parameter adjustment direction to obtain multiple groups of readjusted structural parameters;

[0158] Based on each set of readjusted structural parameters and the initial device parameters, obtaining readjusted electrical performance evaluation parameters corresponding to each set of readjusted structural parameters;

[0159] If any set of readjusted electrical performance evaluation parameters belongs to the target electrical performance evaluation parameter range, the initial structural parameters are used as input, and the readjusted structural parameters corresponding to any set of readjusted electrical performance evaluation parameters are used as output to train the initial field plate structure optimization model;

[0160] In response to the convergence of the trained initial field plate structure optimization model, the trained initial field plate structure optimization model is determined as the field plate structure optimization model corresponding to the initial device parameters.

[0161] In one embodiment of the present disclosure, based on the adjusted electrical performance evaluation parameter and the target electrical performance evaluation parameter range, at least one set of structural parameters to be adjusted is determined from multiple sets of adjustment structural parameters, including:

[0162] Determine the closest boundary value between the target electrical performance evaluation parameter range and the adjusted electrical performance evaluation parameter corresponding to the adjusted structural parameter, and obtain the absolute difference between the boundary value and the adjusted electrical performance evaluation parameter corresponding to the adjusted structural parameter;

[0163] At least one set of adjustment structural parameters with the smallest corresponding absolute difference is determined as at least one set of structural parameters to be adjusted.

[0164] In one embodiment of the present disclosure, the electrical performance evaluation parameter includes at least one of a breakdown voltage, a specific on-resistance, and a quality factor.

[0165] In one embodiment of the present disclosure, the target electrical performance evaluation parameter range includes: the breakdown voltage is greater than the target breakdown voltage threshold BV0, the specific on-resistance is less than the target specific on-resistance Ron,sp0, and the quality factor is greater than the quality factor threshold FOM n ;

[0166] The structural parameter adjustment direction is obtained based on at least one set of structural parameters to be adjusted, initial structural parameters, adjusted electrical performance evaluation parameters corresponding to at least one set of structural parameters to be adjusted, and a target electrical performance evaluation parameter range, including:

[0167] based on Obtaining a first adaptation function value F(x)1 corresponding to each group of structural parameters to be adjusted, wherein BV1 is a breakdown voltage in the electrical performance evaluation parameter after adjustment;

[0168] based on Obtaining a second adaptation function value F(x)2 corresponding to each group of structural parameters to be adjusted, wherein Ron, sp1 is the specific on-resistance in the electrical performance evaluation parameter after adjustment;

[0169] based on Obtaining a third adaptation function value F(x)3 corresponding to each group of structural parameters to be adjusted, wherein FOM1 is a quality factor in the electrical performance evaluation parameter after adjustment;

[0170] Determine, in at least one group of structural parameters to be adjusted, at least one of the first adaptation function value F(x)1, the second adaptation function value F(x)2, and the third adaptation function value F(x)3 that is the minimum target structural parameter to be adjusted;

[0171] Based on the difference between the target structural parameters to be adjusted and the initial structural parameters, the structural parameter adjustment direction is determined.

[0172] Figure 5 A schematic diagram showing the structure of a computer system suitable for implementing the method according to an embodiment of the present disclosure is shown.

[0173] like Figure 5 As shown, the computer system includes a processing unit, which can perform the various methods in the above-mentioned embodiments according to the program stored in the read-only memory (ROM) or the program loaded from the storage part into the random access memory (RAM). In the RAM, various programs and data required for the operation of the computer system are also stored. The processing unit, ROM and RAM are connected to each other through a bus. The input / output (I / O) interface is also connected to the bus.

[0174] The following components are connected to the I / O interface: an input part including a keyboard, a mouse, etc.; an output part including a cathode ray tube (CRT), a liquid crystal display (LCD), etc., and a speaker; a storage part including a hard disk, etc.; and a communication part including a network interface card such as a LAN card, a modem, etc. The communication part performs a communication process via a network such as the Internet. The drive is also connected to the I / O interface as needed. Removable media, such as disks, optical disks, magneto-optical disks, semiconductor memories, etc., are installed on the drive as needed so that the computer program read therefrom is installed into the storage part as needed. Among them, the processing unit can be implemented as a processing unit such as a CPU, a GPU, a TPU, an FPGA, an NPU, etc.

[0175] In particular, according to an embodiment of the present disclosure, the method described above can be implemented as a computer software program. For example, an embodiment of the present disclosure includes a computer program product, which includes a computer program tangibly contained on a machine-readable medium, and the computer program includes a program code for executing the above method. In such an embodiment, the computer program can be downloaded and installed from a network through a communication part, and / or installed from a removable medium.

[0176] The flowcharts and block diagrams in the accompanying drawings illustrate the possible architecture, functions and operations of the systems, methods and computer program products according to various embodiments of the present disclosure. In this regard, each box in the flowchart or block diagram can represent a module, a program segment or a part of a code, and the module, a program segment or a part of the code contains one or more executable instructions for realizing the specified logical function. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in a different order from the order marked in the accompanying drawings. For example, two boxes represented in succession can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or flowchart, and the combination of boxes in the block diagram and / or flowchart can be implemented with a dedicated hardware-based system that performs a specified function or operation, or can be implemented with a combination of dedicated hardware and computer instructions.

[0177] The units or modules involved in the embodiments described in the present disclosure may be implemented by software or programmable hardware. The units or modules described may also be set in a processor, and the names of these units or modules do not constitute limitations on the units or modules themselves in some cases.

[0178] As another aspect, the present disclosure further provides a computer-readable storage medium, which may be a computer-readable storage medium included in the electronic device or computer system in the above embodiment; or a computer-readable storage medium that exists independently and is not assembled into a device. The computer-readable storage medium stores one or more programs, and the programs are used by one or more processors to execute the method described in the present disclosure.

[0179] The above description is only a preferred embodiment of the present disclosure and an explanation of the technical principles used. Those skilled in the art should understand that the scope of the invention involved in the present disclosure is not limited to the technical solution formed by a specific combination of the above technical features, but should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept. For example, the above features are replaced with the technical features with similar functions disclosed in the present disclosure (but not limited to) by each other.

Claims

1. A method for optimizing a field plate structure, characterized in that: include: Obtaining an initial field plate structure optimization model; Based on the initial device parameters and the initial structural parameters, obtaining electrical performance evaluation parameters of the initial semiconductor device before adjustment, wherein the structural parameters include the length of each step in the field plate structure and the thickness of the oxide under the field plate in each step, and the device parameters include at least one of the doping concentration of the drift region and the length of the drift region; Adjusting the initial structural parameters to obtain multiple groups of adjusted structural parameters; Based on each set of adjustment structure parameters and the initial device parameters, obtaining adjusted electrical performance evaluation parameters corresponding to each set of adjustment structure parameters; If any set of adjusted electrical performance evaluation parameters belongs to the target electrical performance evaluation parameter range, the initial structural parameters are used as input, and the adjusted structural parameters corresponding to any set of adjusted electrical performance evaluation parameters are used as output to train the initial field plate structure optimization model; In response to the convergence of the trained initial field plate structure optimization model, determining the trained initial field plate structure optimization model as a field plate structure optimization model corresponding to the initial device parameters; Acquire structural parameters of the midplane structure in the semiconductor device to be optimized and device parameters of the semiconductor device to be optimized; If the device parameters match the initial device parameters, the structural parameters are used as inputs to the field plate structure optimization model to obtain target structural parameters output by the field plate structure optimization model; The field plate structure in the semiconductor device to be optimized is optimized based on the target structure parameters.

2. The field plate structure optimization method according to claim 1, characterized in that: The method further comprises: If each set of adjusted electrical performance evaluation parameters does not fall within the target electrical performance evaluation parameter range, then based on the adjusted electrical performance evaluation parameters and the target electrical performance evaluation parameter range, determining at least one set of structural parameters to be adjusted from the multiple sets of adjustment structural parameters; Acquire a structural parameter adjustment direction based on the at least one set of structural parameters to be adjusted, the initial structural parameters, the adjusted electrical performance evaluation parameters corresponding to the at least one set of structural parameters to be adjusted, and a target electrical performance evaluation parameter range; Adjusting any one group of structural parameters to be adjusted based on the structural parameter adjustment direction to obtain multiple groups of readjusted structural parameters; Based on each set of readjusted structural parameters and the initial device parameters, obtaining readjusted electrical performance evaluation parameters corresponding to each set of readjusted structural parameters; If any set of readjusted electrical performance evaluation parameters belongs to the target electrical performance evaluation parameter range, the initial structural parameters are used as input, and the readjusted structural parameters corresponding to any set of readjusted electrical performance evaluation parameters are used as output to train the initial field plate structure optimization model; In response to the convergence of the trained initial field plate structure optimization model, the trained initial field plate structure optimization model is determined as the field plate structure optimization model corresponding to the initial device parameters.

3. The field plate structure optimization method according to claim 2, characterized in that: The determining at least one group of to-be-adjusted structural parameters from the multiple groups of adjustment structural parameters based on the adjusted electrical performance evaluation parameters and the target electrical performance evaluation parameter range comprises: Determine the closest boundary value between the target electrical performance evaluation parameter range and the adjusted electrical performance evaluation parameter corresponding to the adjustment structure parameter, and obtain the absolute difference between the boundary value and the adjusted electrical performance evaluation parameter corresponding to the adjustment structure parameter; At least one set of adjustment structural parameters with the smallest corresponding absolute difference is determined as the at least one set of structural parameters to be adjusted.

4. The field plate structure optimization method according to claim 2, characterized in that: The electrical performance evaluation parameter includes at least one of breakdown voltage, specific on-resistance and quality factor.

5. The field plate structure optimization method according to claim 4, characterized in that: The target electrical performance evaluation parameter range includes: the breakdown voltage is greater than the target breakdown voltage threshold BV0, the specific on-resistance is less than the target specific on-resistance Ron,sp0, and the quality factor is greater than the quality factor threshold FOM0; The obtaining of the structural parameter adjustment direction based on the at least one group of structural parameters to be adjusted, the initial structural parameters, the adjusted electrical performance evaluation parameters corresponding to the at least one group of structural parameters to be adjusted, and the target electrical performance evaluation parameter range includes: based on Obtaining a first adaptation function value F(x)1 corresponding to each group of structural parameters to be adjusted, wherein BV1 is the breakdown voltage in the electrical performance evaluation parameter after adjustment; based on Obtaining a second adaptation function value F(x)2 corresponding to each group of structural parameters to be adjusted, wherein Ron,sp1 is the specific on-resistance in the electrical performance evaluation parameter after adjustment; based on Obtaining a third adaptation function value F(x)3 corresponding to each group of structural parameters to be adjusted, wherein FOM1 is a quality factor in the electrical performance evaluation parameter after adjustment; Determine, in the at least one group of structural parameters to be adjusted, at least one of the first adaptation function value F(x)1, the second adaptation function value F(x)2, and the third adaptation function value F(x)3, which is the minimum target structural parameter to be adjusted; Based on the difference between the target structural parameter to be adjusted and the initial structural parameter, the structural parameter adjustment direction is determined.

6. A field plate structure optimization device, characterized in that: include: The optimization model acquisition module is configured to acquire an initial field plate structure optimization model; based on the initial device parameters and the initial structural parameters, acquire the electrical performance evaluation parameters of the initial semiconductor device before adjustment, wherein the structural parameters include the length of each step in the field plate structure and the thickness of the oxide under the field plate in each step, and the device parameters include at least one of the doping concentration of the drift region and the length of the drift region; adjust the initial structural parameters to acquire multiple groups of adjusted structural parameters; based on each group of adjusted structural parameters and the initial device parameters, acquire the adjusted electrical performance evaluation parameters corresponding to each group of adjusted structural parameters; If any set of adjusted electrical performance evaluation parameters belongs to the target electrical performance evaluation parameter range, the initial structural parameters are used as input, and the adjusted structural parameters corresponding to any set of adjusted electrical performance evaluation parameters are used as output to train the initial field plate structure optimization model; In response to the convergence of the trained initial field plate structure optimization model, determining the trained initial field plate structure optimization model as a field plate structure optimization model corresponding to the initial device parameters; A device parameter acquisition module, configured to acquire structural parameters of a field plate structure in a semiconductor device to be optimized and device parameters of the semiconductor device, wherein the structural parameters include the length of each step in the field plate structure and the thickness of an oxide under the field plate in each step, and the device parameters include at least one of a doping concentration of a drift region and a length of the drift region; an optimization parameter acquisition module, configured to, if the device parameters match the initial device parameters, take the structural parameters as input and input them into the field plate structure optimization model to obtain target structural parameters output by the field plate structure optimization model; The field plate structure optimization module is configured to optimize the field plate structure in the semiconductor device to be optimized based on the target structure parameters.

7. The field plate structure optimization device according to claim 6, characterized in that: The optimization model acquisition module is further configured to: If each set of adjusted electrical performance evaluation parameters does not fall within the target electrical performance evaluation parameter range, then based on the adjusted electrical performance evaluation parameters and the target electrical performance evaluation parameter range, determining at least one set of structural parameters to be adjusted from the multiple sets of adjustment structural parameters; Acquire a structural parameter adjustment direction based on the at least one set of structural parameters to be adjusted, the initial structural parameters, the adjusted electrical performance evaluation parameters corresponding to the at least one set of structural parameters to be adjusted, and a target electrical performance evaluation parameter range; Adjusting any one group of structural parameters to be adjusted based on the structural parameter adjustment direction to obtain multiple groups of readjusted structural parameters; Based on each set of readjusted structural parameters and the initial device parameters, obtaining readjusted electrical performance evaluation parameters corresponding to each set of readjusted structural parameters; If any set of readjusted electrical performance evaluation parameters belongs to the target electrical performance evaluation parameter range, the initial structural parameters are used as input, and the readjusted structural parameters corresponding to any set of readjusted electrical performance evaluation parameters are used as output to train the initial field plate structure optimization model; In response to the convergence of the trained initial field plate structure optimization model, the trained initial field plate structure optimization model is determined as the field plate structure optimization model corresponding to the initial device parameters.

8. The field plate structure optimization device according to claim 7, characterized in that: The optimization model acquisition module is specifically configured as follows: Determine the closest boundary value between the target electrical performance evaluation parameter range and the adjusted electrical performance evaluation parameter corresponding to the adjustment structure parameter, and obtain the absolute difference between the boundary value and the adjusted electrical performance evaluation parameter corresponding to the adjustment structure parameter; At least one set of adjustment structural parameters with the smallest corresponding absolute difference is determined as the at least one set of structural parameters to be adjusted.

9. The field plate structure optimization device according to claim 7, characterized in that: The electrical performance evaluation parameter includes at least one of breakdown voltage, specific on-resistance and quality factor.

10. The field plate structure optimization device according to claim 9, characterized in that: The target electrical performance evaluation parameter range includes: the breakdown voltage is greater than the target breakdown voltage threshold BV0, the specific on-resistance is less than the target specific on-resistance Ron,sp0, and the quality factor is greater than the quality factor threshold FOM0; The optimization model acquisition module is specifically configured as follows: based on Obtaining a first adaptation function value F(x)1 corresponding to each group of structural parameters to be adjusted, wherein BV1 is the breakdown voltage in the electrical performance evaluation parameter after adjustment; based on Obtaining a second adaptation function value F(x)2 corresponding to each group of structural parameters to be adjusted, wherein Ron,sp1 is the specific on-resistance in the electrical performance evaluation parameter after adjustment; based on Obtaining a third adaptation function value F(x)3 corresponding to each group of structural parameters to be adjusted, wherein FOM1 is a quality factor in the electrical performance evaluation parameter after adjustment; Determine, in the at least one group of structural parameters to be adjusted, at least one of the first adaptation function value F(x)1, the second adaptation function value F(x)2, and the third adaptation function value F(x)3, which is the minimum target structural parameter to be adjusted; Based on the difference between the target structural parameter to be adjusted and the initial structural parameter, the structural parameter adjustment direction is determined.

11. An electronic device, characterized in that: The method comprises a memory and a processor; wherein the memory is used to store one or more computer instructions, wherein the one or more computer instructions are executed by the processor to implement the method steps described in any one of claims 1 to 5.

12. A computer-readable storage medium having computer instructions stored thereon, characterized in that: When the computer instructions are executed by a processor, the method steps described in any one of claims 1 to 5 are implemented.

Images