Group wafer Map generation method, Group wafer Map test method and Group wafer Map test device

Abstract

The invention relates to a Group wafer Map generation method, a Group wafer Map test method and a Group wafer Map test device. The Group wafer Map generation method comprises the following steps: acquiring a wafer image, a center grain coordinate and a layout parameter of a Group wafer; according to the layout parameters, the number of crystal grain units in the Group wafer in the first direction and the number of crystal grain units in the Group wafer in the second direction which are perpendicular to each other are calculated; on the basis of the center grain coordinates, the layout parameters and the number of the grain units, traversing and analyzing the number of preset type grains located in the Group wafer range in the grain units to obtain the grain column number and the grain row number; determining the physical coordinates of the crystal grains corresponding to the crystal grain column number and the crystal grain row number, and determining the crystal grain attributes of the corresponding crystal grains according to the distance between the physical coordinates and the wafer center; and generating a Map of the Group wafer according to the grain column number, the grain row number, the physical coordinates and the grain attributes. By adopting the method and the device, the accurate generation of the Map of the Group wafer can be realized.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a Group wafer Map generation method, testing method, device, equipment and storage medium. Background Art

[0002] As modern electronic devices have increasing requirements for miniaturization, lightweight, high performance, multi-function, low power consumption and low cost, the characteristic size of IC chips continues to shrink and the integration scale is rapidly expanding. Chip packaging technology is also constantly innovating, and the requirements for wafer testing are also constantly increasing.

[0003] A group wafer is a wafer composed of multiple die units (Group dies) evenly arranged and distributed. Several different types of dies can be distributed in one die unit, and one type of die is used as a test die. A group wafer includes several test dies and non-test dies. When testing a group wafer, it is necessary to perform a needle test on the test dies in all die units. On the one hand, it is necessary to determine the location of each die unit, and on the other hand, it is necessary to determine the location of the test die in the die unit.

[0004] Before wafer testing, a map needs to be generated and tested based on the map. The map generation method for a conventional wafer composed of grains only requires determining the central test grain, and calculating the number of grains in the four directions of up, down, left, and right based on the wafer radius and the test grain spacing to draw a map. Compared with conventional wafers, Group wafers have their own particularity. The distances between each test grain are different, and it is impossible to generate and test Group wafers using the traditional conventional wafer method. Summary of the invention

[0005] Based on this, it is necessary to provide a Group wafer Map generation method, testing method, device, equipment and storage medium that can realize Group wafer Map generation to address the technical problem of the lack of an automatic Group wafer Map generation method in the prior art.

[0006] A method for generating a Group wafer Map, comprising:

[0007] Acquire a wafer image of a group wafer, a center grain coordinate of the group wafer, and a layout parameter of the group wafer;

[0008] According to the layout parameters of the Group wafer, respectively calculate the number of die units in the Group wafer in a first direction and a second direction, wherein the first direction and the second direction are perpendicular to each other;

[0009] Based on the center grain coordinates, the layout parameters of the Group wafer, and the number of the grain units in the first direction and the second direction, traverse and analyze the number of preset type grains in each grain unit in the first direction and the second direction within the range of the Group wafer to obtain the number of grain columns and the number of grain rows respectively;

[0010] Determine the physical coordinates of the grains corresponding to the number of grain columns and the number of grain rows, and determine the grain properties of the corresponding grains according to the distance between the physical coordinates and the center of the wafer, wherein the grain properties include test grain properties and non-test grain properties;

[0011] A Map of the Group wafer is generated at least according to the number of grain columns, the number of grain rows, the physical coordinates and the grain attributes.

[0012] In one of the embodiments, the layout parameters include wafer size, the length of the grain unit in the first direction and the length in the second direction, the length of the preset type grain in the first direction and the length in the second direction, and the coordinates of the preset type grain included in a grain unit relative to the grain unit.

[0013] In one embodiment, respectively calculating the number of die units in the Group wafer in the first direction and the second direction according to the layout parameters of the Group wafer includes:

[0014] Calculate the number of the die units in the Group wafer in the first direction according to the wafer size and the length of the die unit in the first direction;

[0015] The number of the die units in the Group wafer in the second direction is calculated according to the wafer size and the length of the die unit in the second direction.

[0016] In one embodiment, the wafer size includes a wafer radius;

[0017] The method of traversing and analyzing the number of preset type grains located within the Group wafer range in each grain unit in the first direction and the second direction based on the center grain coordinate, the layout parameters of the Group wafer, and the number of the grain units in the first direction and the second direction to obtain the number of grain columns and the number of grain rows respectively includes:

[0018] Calculate the coordinates of the preset type of grains in each grain unit in the first direction according to the coordinates of the central grain, the number of the grain units in the first direction, the lengths of the grain unit in the first direction and the second direction, and the coordinates of the preset type of grains included in one grain unit relative to the grain unit;

[0019] Calculating the distance from the coordinates of each preset type of grain in the first direction to the center of the wafer to obtain a first distance;

[0020] Record the number of wafers for which the first distance is less than or equal to the wafer radius, and obtain the number of grain columns;

[0021] Calculate the coordinates of the preset type of grains in each grain unit in the second direction according to the coordinates of the central grain, the number of the grain units in the second direction, the lengths of the grain unit in the first direction and the second direction, and the coordinates of the preset type of grains included in one grain unit relative to the grain unit;

[0022] Calculate the distance from the coordinates of each preset type of grain in the second direction to the center of the wafer to obtain a second distance;

[0023] The number of times that the second distance is less than or equal to the wafer radius is recorded to obtain the number of grain rows.

[0024] In one embodiment, the wafer size includes a wafer radius; determining the physical coordinates of the grains corresponding to the number of grain columns and the number of grain rows, and determining the grain properties of the corresponding grains according to the distance between the physical coordinates and the center of the wafer, includes:

[0025] Calculate the physical coordinates of the grain corresponding to the serial number according to the coordinates of the central grain, the serial numbers corresponding to the number of grain columns and the number of grain rows, the length of the grain unit in the first direction and the length in the second direction, and the length of the preset type of grain in the first direction and the length in the second direction;

[0026] Calculating the distance between the physical coordinate and the center of the wafer;

[0027] If the distance is greater than or equal to the wafer radius, marking the grain attribute of the grain corresponding to the physical coordinate as a non-test grain;

[0028] If the distance is less than the wafer radius, the die attribute of the die corresponding to the physical coordinate is marked as a test die.

[0029] In one embodiment, the grain attributes further include edge grain attributes; when the distance is less than the wafer radius, the grain attribute of the grain corresponding to the physical coordinate marked as a test grain includes:

[0030] Calculating the difference between the wafer radius and a preset edge removal distance;

[0031] If the distance is greater than or equal to the difference, marking the grain attribute of the grain corresponding to the physical coordinate as an edge grain;

[0032] If the distance is smaller than the difference, the die attribute of the die corresponding to the physical coordinate is marked as a test die.

[0033] A Group wafer testing method, comprising:

[0034] Based on the Map of the Group wafer generated by the method described in any one of claims 1 to 6, the test die in the Group wafer are tested.

[0035] A Group wafer Map generation device, comprising:

[0036] A parameter acquisition module, used to acquire a wafer image of a Group wafer, a center grain coordinate of the Group wafer, and a layout parameter of the Group wafer;

[0037] A parameter calculation module, used to calculate the number of grain units in the Group wafer in a first direction and a second direction respectively according to the layout parameters of the Group wafer, wherein the first direction and the second direction are perpendicular to each other;

[0038] A row and column analysis module, configured to traverse and analyze the number of preset type grains in each grain unit in the first direction and the second direction within the range of the Group wafer based on the center grain coordinate, the layout parameters of the Group wafer, and the number of the grain units in the first direction and the second direction, and obtain the number of grain columns and the number of grain rows respectively;

[0039] an attribute determination module, used to determine the physical coordinates of the grains corresponding to the number of grain columns and the number of grain rows, and determine the grain attributes of the corresponding grains according to the distance between the physical coordinates and the center of the wafer, wherein the grain attributes include test grain attributes and non-test grain attributes;

[0040] A map generating module is used to generate a map of the Group wafer according to at least the number of grain columns, the number of grain rows, the physical coordinates and the grain attributes.

[0041] A Group wafer testing device, comprising:

[0042] A parameter acquisition module, used to acquire a wafer image of a Group wafer, a center grain coordinate of the Group wafer, and a layout parameter of the Group wafer;

[0043] A parameter calculation module, used to calculate the number of grain units in the Group wafer in a first direction and a second direction respectively according to the layout parameters of the Group wafer, wherein the first direction and the second direction are perpendicular to each other;

[0044] A row and column analysis module, configured to traverse and analyze the number of preset type grains in each grain unit in the first direction and the second direction within the range of the Group wafer based on the center grain coordinate, the layout parameters of the Group wafer, and the number of the grain units in the first direction and the second direction, and obtain the number of grain columns and the number of grain rows respectively;

[0045] an attribute determination module, used to determine the physical coordinates of the grains corresponding to the number of grain columns and the number of grain rows, and determine the grain attributes of the corresponding grains according to the distance between the physical coordinates and the center of the wafer, wherein the grain attributes include test grain attributes and non-test grain attributes;

[0046] A map generating module, configured to generate a map of the Group wafer according to at least the number of grain columns, the number of grain rows, the physical coordinates and the grain attributes;

[0047] The test module is used to test the test dies in the Group wafer based on the Map of the Group wafer.

[0048] An electronic device comprises a memory and a processor, wherein the memory stores a computer program, and the processor implements the steps of the above-mentioned Group wafer Map generation method when executing the computer program, or implements the steps of the above-mentioned Group wafer testing method when executing the computer program.

[0049] A probe station comprises a wafer stage, an image acquisition device and the above electronic device, wherein the electronic device is connected to the image acquisition device;

[0050] The wafer stage is used to place a wafer, and the image acquisition device acquires an image of the wafer to obtain a wafer image and sends the image to the electronic device.

[0051] The above-mentioned Group wafer Map generation method, test method, device, equipment and storage medium calculate the number of grain units in the Group wafer in the first direction and the second direction, analyze the number of grain rows and grain columns, and accurately calculate the physical coordinates of each grain based on the number of grain rows and grain columns, determine the grain properties based on the distance between the physical coordinates and the wafer center, and generate a Map based on the obtained number of grain columns, number of grain rows, physical coordinates and grain properties, thereby realizing the accurate generation of the Map of the Group wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0053] Figure 1 1 is a flow chart of a method for generating a Group wafer map in one embodiment;

[0054] Figure 2 A schematic diagram of the layout of a Group wafer in one embodiment;

[0055] Figure 3 It is a flowchart of a method for generating a Group wafer map in another embodiment;

[0056] Figure 4 1 is a flow chart of a Group wafer testing method in one embodiment;

[0057] Figure 5 It is a structural block diagram of a Group wafer map generating device in one embodiment;

[0058] Figure 6 FIG. 4 is a structural block diagram of a Group wafer testing device in one embodiment. DETAILED DESCRIPTION

[0059] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0060] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0061] In one embodiment, Figure 1 As shown, a method for generating a Group wafer Map is provided, comprising the following steps S110 to S190.

[0062] S110: Obtain wafer images of the Group wafers, central die coordinates of the Group wafers, and layout parameters of the Group wafers.

[0063] The wafer image of the Group wafer can be obtained by photographing the Group wafer through an image acquisition device. For example, the Group wafer is placed on the wafer carrier of the probe station, and the wafer image is obtained by photographing the Group wafer through the image acquisition device of the probe station. The center grain coordinates are the position coordinates of the center grain of the Group wafer in the coordinate system, which can be obtained by locating the center grain of the Group wafer. The layout parameters of the Group wafer are data related to the layout of the Group wafer. For example, they may include wafer size, data related to the layout of grain units in the Group wafer, etc. The data related to the layout of grain units include, for example, the length and width of the grain unit, the length of the grain in a grain unit, and the width of the grain.

[0064] S130: Calculate the number of die units in the Group wafer in a first direction and a second direction according to the layout parameters of the Group wafer, respectively, where the first direction and the second direction are perpendicular to each other.

[0065] The first direction and the second direction may be one of the X-axis direction and the Y-axis direction in the coordinate system. For example, if the first direction is the X-axis direction, the second direction is the Y-axis direction. Specifically, the center grain coordinates may be used as the position center, and the number of grain units on the left and right sides of the center grain coordinates may be calculated respectively to obtain the number of grain units in the first direction / second direction, and the number of grain units on the upper and lower sides of the center grain coordinates may be calculated respectively to obtain the number of grain units in the second direction / first direction.

[0066] S150: Based on the center grain coordinates, the layout parameters of the Group wafer, and the number of grain units in the first direction and the second direction, traverse and analyze the number of preset type grains in each grain unit in the first direction and the second direction within the range of the Group wafer to obtain the number of grain columns and the number of grain rows, respectively.

[0067] A die unit of a Group wafer includes multiple types of die. Among them, the preset type of die can be determined according to the type of die currently required to be tested. For example, the die unit includes type A die, type B die, and type C die. If type A die is currently required to be tested, the preset type of die is type A die. The number of type A die in each die unit within the range of the Group wafer is traversed and analyzed.

[0068] Specifically, the coordinates of the preset type of grains in each grain unit are calculated, and by calculating the distance between the coordinates of the preset type of grains in the grain unit and the center of the wafer, it is determined whether the distance is within the radius of the wafer, thereby determining whether the preset type of grains are within the Group wafer range. For example, the first direction is the X-axis direction, and the second direction is the Y-axis direction. The number of preset type of grains within the Group wafer range in the first direction is counted to obtain the number of grain columns, and the number of preset type of grains within the Group wafer range in the second direction is counted to obtain the number of grain columns to obtain the number of grain rows.

[0069] S170: Determine the physical coordinates of the grains corresponding to the number of grain columns and the number of grain rows, and determine the grain properties of the corresponding grains according to the distance between the physical coordinates and the center of the wafer, where the grain properties include test grain properties and non-test grain properties.

[0070] Specifically, it can be determined whether the distance between the physical coordinates of the grain and the center of the wafer is within the radius of the wafer to determine whether the grain is within the wafer range, thereby determining the grain properties of the corresponding grain.

[0071] S190: Generate a Map of the Group wafer at least according to the number of grain columns, the number of grain rows, the physical coordinates, and the grain attributes.

[0072] Specifically, after obtaining the number of grain columns, the number of grain rows, the physical coordinates of the grains and the grain properties, the map of the Group wafer can be generated according to the position and number of the test grains using the existing map generation method.

[0073] The above-mentioned Group wafer Map image generation method calculates the number of grain units in the Group wafer in the first direction and the second direction, analyzes the number of grain rows and the number of grain columns, and accurately calculates the physical coordinates of each grain based on the number of grain rows and the number of grain columns, determines the grain properties based on the distance between the physical coordinates and the wafer center, and generates a Map image based on the obtained number of grain columns, number of grain rows, physical coordinates and grain properties, thereby realizing the accurate generation of the Map image of the Group wafer.

[0074] In one embodiment, the layout parameters of the Group wafer include the wafer size, the length of the grain unit in the first direction and the length in the second direction, the length of the preset type of grain in the first direction and the length in the second direction, and the coordinates of the preset type of grain included in a grain unit relative to the grain unit.

[0075] The wafer size is a value indicating the size of the wafer, and specifically may be the wafer radius, which is convenient for subsequent calculations. It is understood that the obtained wafer size may also be the wafer diameter, and the wafer radius may be further calculated based on the wafer diameter.

[0076] The size of each grain unit in the Group wafer is consistent, and the grain layout within the grain unit is consistent. Figure 2 As shown in the figure, multiple die units are regularly arranged inside the Group wafer, and the blocks of the die units are different from the blocks of the die. Consider a die unit (Group) as a large rectangle. Figure 2 The medium thick black box represents a group. Taking the first direction as the X-axis direction, Index X is the length of the group in the first direction, and Index Y is the length of the group in the second direction, that is, the width of the grain unit. The small grid in a group represents a grain. Figure 2 There are three types of grains in the Group, and each grain has a different size. Grain No. 1 is the first type of grain, and its arrangement rule in the Group is 2 rows and 3 columns. Grain No. 2 is the second type of grain, and its arrangement rule in the Group is 1 row and 2 columns. Grain No. 3 is the third type of grain, and its arrangement rule in the Group is 1 row and 1 column. A test device only tests one type of grain at a time.

[0077] by Figure 2 Based on the first grain unit in the upper left corner, the first type of grain is used as the test grain, and the six adjacent test grains are defined as the test area within a Group area; Figure 2 The number of test grains in the X-axis direction in the Group is 3, and the number of test grains in the Y-axis direction in the Group is 2. Take the lower left corner of the test area as the reference point (X1, Y1), find the lower left corner of the adjacent grain unit on the right side of the test area (X2, Y2) and the lower left corner of the adjacent grain unit on the bottom side of the test area (X3, Y3), the length of the grain unit Index X = |X2-X1|, the width of the grain unit Index Y = |Y3-Y1|.

[0078] In one embodiment, step S130 includes: calculating the number of grain units in the Group wafer in the first direction according to the wafer size and the length of the grain unit in the first direction; calculating the number of grain units in the Group wafer in the second direction according to the wafer size and the length of the grain unit in the second direction.

[0079] The number of grain units in the Group wafer in the first direction / second direction refers to the number of grain units arranged in the first direction / second direction of the wafer diameter. Specifically, the quotient of the size of the wafer in the first direction along the diameter divided by the length of the grain unit in the first direction can be calculated and rounded up to obtain the number of grain units arranged in the first direction of the diameter. Similarly, the number of grain units arranged in the second direction of the diameter can be calculated. Thus, using the wafer size and the size of the grain unit, the number of grain units in two directions perpendicular to each other can be accurately calculated.

[0080] For example, the wafer size may be the wafer radius, and the wafer radius is divided by the length Index X of the Group to obtain the number of grain units on the left side of the center grain and the number of grain units on the right side of the center grain along the diameter direction, thereby obtaining the number of grain units in the first direction; the wafer radius is divided by the width Index Y of the Group to obtain the number of grain units on the upper side of the center grain and the number of grain units on the lower side of the center grain along the diameter direction, thereby obtaining the number of grain units in the second direction; if the number is a non-integer, it is rounded up, so as to obtain the maximum number of grain units in the four directions of the top, bottom, left and right of the center grain.

[0081] In one embodiment, the wafer size includes the wafer radius. Step S150 includes steps (a1) to (a6).

[0082] Step (a1): Calculate the coordinates of the preset type of grains in each grain unit in the first direction according to the coordinates of the central grain, the number of grain units in the first direction, the lengths of the grain units in the first direction and the second direction, and the coordinates of the preset type of grains included in a grain unit relative to the grain unit.

[0083] Specifically, if the coordinates of the central grain and the lengths and numbers of the grain units in the first direction and the second direction are known, the coordinates of the corner points of each grain unit in the first direction can be calculated. For example, the first direction is the X-axis, the length of the grain unit in the first direction is Index X, the length in the second direction is Index Y, and the coordinates of the central grain are (X0, Y0); the central grain is a grain near the center of the circle, usually the grain is the grain in the lower left corner of a grain unit, which is generally equal to the Y coordinate of the grain at the lower corner point of the grain unit along the X-axis direction of the wafer diameter, then the coordinates of the lower left corner point of the first grain unit adjacent to the left side of the central grain along the first direction of the wafer diameter are (X0-Index X, Y0), and the coordinates of the upper left corner point are (X0-Index X, Y0+Index Y); the coordinates of the lower left corner point of the second central grain unit adjacent to the left side of the central grain are (X0-2*Index X, Y0), and the coordinates of the upper left corner point of the second central grain unit are (X0-2*Index X, Y0+Index Y), and so on. The coordinates of the preset type of grains in the grain unit in the first direction along the wafer diameter can be calculated based on the coordinates of the corner points of each grain unit in the first direction and the coordinates of the preset type of grains included in the grain unit relative to the grain unit.

[0084] Step (a2): Calculate the distance from the coordinates of each preset type of grain in the first direction to the center of the wafer to obtain a first distance.

[0085] Step (a3): Record the number of first distances less than or equal to the wafer radius to obtain the number of grain columns.

[0086] If the first distance is less than or equal to the wafer radius, it means that the corresponding preset type of grains is within the range of the wafer radius. The number of preset type of grains within the range of the wafer radius along the first direction of the wafer diameter is counted to obtain the number of grain columns.

[0087] Specifically, the distance between the preset type of grain on the left side of the central grain and the center of the wafer can be calculated to analyze and count the number of grain columns on the left side. The distance between the preset type of grain on the right side of the central grain and the center of the wafer can be calculated to analyze and count the number of grain columns on the right side. The sum of the number of grain columns on the left and the number of grain columns on the right is equal to the total number of grain columns.

[0088] Step (a4): Calculate the coordinates of the preset type of grains in each grain unit in the second direction based on the coordinates of the central grain, the number of grain units in the second direction, the lengths of the grain units in the first direction and the second direction, and the coordinates of the preset type of grains included in a grain unit relative to the grain unit.

[0089] Specifically, taking the center grain coordinate as the reference point, if the length of the grain unit and the number of grain units in the first direction and the second direction are known, the corner point coordinates of each grain unit in the second direction along the wafer diameter can be calculated. Then, based on the corner point coordinates of each grain unit in the second direction along the wafer diameter and the coordinates of the preset type of grains included in the grain unit relative to the grain unit, the coordinates of the preset type of grains in the grain unit in the second direction along the wafer diameter can be calculated.

[0090] Step (a5): Calculate the distance from the coordinates of each preset type of grain in the second direction to the center of the wafer to obtain a second distance.

[0091] Step (a6): record the number of times the second distance is less than or equal to the wafer radius to obtain the number of grain rows.

[0092] The number of preset type grains within the wafer radius range along the second direction of the wafer diameter is counted to obtain the number of grain rows. Specifically, the distance between the preset type grain on the upper side of the central grain and the wafer center can be calculated to analyze and count the number of grain rows on the upper side, and the distance between the preset type grain on the lower side of the central grain and the wafer center can be calculated to analyze and count the number of grain rows on the lower side. The sum of the number of grain rows on the upper side and the number of grain rows on the lower side is equal to the total number of grain rows.

[0093] By accurately calculating the coordinates of the preset type of grains in the grain units in the first direction and the second direction and calculating the distance between the coordinates of the preset type of grains and the center of the wafer, the number of grain rows and the number of grain columns of the preset type of grains can be accurately analyzed.

[0094] In one embodiment, the wafer size includes the wafer radius. Step S170 includes steps (b1) to (b4).

[0095] Step (b1): Calculate the physical coordinates of the grain corresponding to the serial number based on the coordinates of the central grain, the serial numbers corresponding to the number of grain columns and rows, the length of the grain unit in the first direction and the length in the second direction, and the length of the preset type of grain in the first direction and the length in the second direction.

[0096] Specifically, assuming that the current grain is in the 5th column, that is, the serial number corresponding to the grain column number is 5, calculate 5 / 3 (the number of preset type grains included in each grain unit), round the quotient upward to a=2, b=a*3-5=1, take the first direction as the X-axis, the coordinates of the central grain are (X0, Y0), the length of the grain unit in the X-axis direction is Index X, and the length of the preset type grain in the X-axis direction is LX, then the coordinate of the current grain in the X-direction is X=Xa*index X+b*LX=X-2*index X+LX. Similarly, the coordinate of the current grain in the Y-axis direction can be calculated based on the Y-axis coordinate of the central grain, the serial number corresponding to the number of grain rows, the length of the grain unit in the Y-axis direction is Index Y, and the length of the preset type grain in the Y-axis direction.

[0097] Step (b2): Calculate the distance between the physical coordinate and the wafer center.

[0098] Step (b3): ​​If the distance is greater than or equal to the wafer radius, the die attribute of the die corresponding to the marked physical coordinate is a non-test die.

[0099] If the distance between the physical coordinate and the wafer center is greater than or equal to the wafer radius, it means that the die corresponding to the physical coordinate is outside the wafer radius range, and the corresponding die is regarded as a non-test die.

[0100] Step (b4): If the distance is less than the wafer radius, the grain attribute of the grain corresponding to the marked physical coordinate is a test grain.

[0101] If the distance between the physical coordinate and the wafer center is less than the wafer radius, it means that the grain corresponding to the physical coordinate is within the wafer radius range, and the corresponding grain can be used as a test grain.

[0102] In this embodiment, the physical coordinates of the crystal grains are accurately calculated, and the properties of the crystal grains are marked according to the distance between the physical coordinates and the center of the wafer, with high accuracy.

[0103] Furthermore, the grain attributes also include edge grain attributes. In one embodiment, step (b4) includes: calculating the difference between the wafer radius and the preset edge removal distance; if the distance is greater than or equal to the difference, marking the grain attribute of the grain corresponding to the physical coordinate as an edge grain; if the distance is less than the difference, marking the grain attribute of the grain corresponding to the physical coordinate as a test grain.

[0104] Among them, the demarcation distance can be set according to the actual required demarcation area. For example, if the wafer radius is 5 cm and the 1 cm area of ​​the outer circle of the wafer needs to be demarcated, the demarcation distance can be set to 1 cm, and the difference is equal to 4. If the distance between the physical coordinate and the center of the wafer is greater than or equal to the difference between the wafer radius and the demarcation distance, it means that the grain corresponding to the physical coordinate is in the demarcation area, and it is marked as an edge grain. Otherwise, if the distance between the physical coordinate and the center of the wafer is less than the difference between the wafer radius and the demarcation distance, it means that the grain corresponding to the physical coordinate is in the non-demarcation area of ​​the wafer, and it is marked as a test grain.

[0105] In this embodiment, the grains within the radius of the wafer are further divided into edge grains and test grains, so that the test grains can be divided more accurately.

[0106] like Figure 3 As shown, in a specific embodiment, with the center grain coordinate as the position center, the number of grain units on the left side of the center grain coordinate is first calculated GroupLeftNum, and the preset type of grains in the grain units with the number of GroupLeftNum on the left side are looped to see if they are within the radius of the wafer. If so, the number of grain columns on the left side ColLeftNum is counted and added by one until the traversal is completed. In this way, the number of grain units on the right side GroupRightNum, the number of grain columns on the right side ColRightNum, the number of grain units on the upper side GroupTopNum, the number of grain rows on the upper side RowTopNum, the number of grain units on the lower side GroupBottomNum, and the number of grain rows on the lower side RowBottomNum are calculated in sequence. The total number of grain columns Col = ColLeftNum + ColRightNum, and the total number of grain rows Row = RowTopNum + RowBottomNum. Then traverse the left and right rows and columns of the loop to divide the grain attributes. Among them, the Dummy grain attribute is the non-test grain attribute, Margin represents the edge removal area, and the Mark grain attribute is the edge grain attribute. Finally, a Map is generated.

[0107] In one embodiment, reference Figure 4 , provides a Group wafer testing method, including steps S110 to S190 in the Group wafer Map generation method in the above embodiment, and also includes step S410.

[0108] S410: Testing the test dies in the Group wafer based on the generated Map of the Group wafer.

[0109] The above-mentioned Group wafer testing method performs testing based on a generated Map of the Group wafer. The Map does not need to be drawn manually and has high generation efficiency, thereby improving the efficiency of the Group wafer testing.

[0110] It should be understood that although Figure 1 , Figure 3-Figure 4 The steps in the flowchart are shown in sequence as indicated by the arrows, but these steps are not necessarily executed in the order indicated by the arrows. Unless otherwise specified in this document, there is no strict order restriction for the execution of these steps, and these steps can be executed in other orders. Moreover, Figure 1 , Figure 3-Figure 4 At least part of the steps may include multiple steps or multiple stages. These steps or stages are not necessarily performed at the same time, but can be performed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed in turn or alternately with other steps or at least part of the steps or stages in other steps.

[0111] In one embodiment, Figure 5 As shown, a Group wafer Map generation device is provided, including a parameter acquisition module 510, a parameter calculation module 530, a row and column analysis module 550, a property determination module 570 and a Map generation module 590.

[0112] The parameter acquisition module 510 is used to acquire the wafer image of the Group wafer, the center die coordinates of the Group wafer, and the layout parameters of the Group wafer.

[0113] The parameter calculation module 530 is used to calculate the number of die units in the Group wafer in a first direction and a second direction respectively according to the layout parameters of the Group wafer, and the first direction and the second direction are perpendicular to each other.

[0114] The row and column analysis module 550 is used to traverse and analyze the number of preset type grains located within the Group wafer range in each grain unit in the first direction and the second direction based on the center grain coordinates, the layout parameters of the Group wafer, and the number of grain units in the first direction and the second direction, and obtain the number of grain columns and the number of grain rows respectively.

[0115] The attribute determination module 570 is used to determine the physical coordinates of the grains corresponding to the number of grain columns and rows, and determine the grain attributes of the corresponding grains according to the distance between the physical coordinates and the center of the wafer. The grain attributes include test grain attributes and non-test grain attributes.

[0116] The map generation module 590 is used to generate a map of the Group wafer according to at least the number of grain columns, the number of grain rows, the physical coordinates and the grain attributes.

[0117] The above-mentioned Group wafer Map image generating device calculates the number of grain units in the Group wafer in the first direction and the second direction, analyzes the number of grain rows and the number of grain columns, and accurately calculates the physical coordinates of each grain based on the number of grain rows and the number of grain columns, determines the grain properties based on the distance between the physical coordinates and the wafer center, and generates a Map image based on the obtained number of grain columns, number of grain rows, physical coordinates and grain properties, thereby realizing the accurate generation of the Map image of the Group wafer.

[0118] refer to Figure 6 , provides a Group wafer testing device, including the parameter acquisition module 510, parameter calculation module 530, row and column analysis module 550, attribute determination module 570, and Map generation module 590 in the above-mentioned embodiment, and also includes a testing module 610, wherein the testing module 610 is used to test the test grains in the Group wafer based on the Map of the Group wafer.

[0119] The above-mentioned Group wafer testing device performs testing based on the generated Map of the Group wafer. The Map does not need to be drawn manually and has high generation efficiency, thereby improving the efficiency of the Group wafer testing.

[0120] For the specific limitations of the Group wafer Map generation device and the Group wafer testing device, please refer to the limitations of the Group wafer Map generation method and the Group wafer testing method above, which will not be repeated here. The various modules in the above-mentioned Group wafer Map generation device and the Group wafer testing device can be implemented in whole or in part through software, hardware and a combination thereof. The above-mentioned modules can be embedded in or independent of the processor in the electronic device in the form of hardware, or can be stored in the memory of the electronic device in the form of software, so that the processor can call and execute the operations corresponding to the above modules. It should be noted that the division of modules in the embodiment of the present application is schematic and is only a logical function division. There may be other division methods in actual implementation.

[0121] In one embodiment, an electronic device is provided, including a memory and a processor, wherein a computer program is stored in the memory, and the processor implements the steps in the above-mentioned method embodiments when executing the computer program.

[0122] In one embodiment, a probe station is provided, including a wafer carrier, an image acquisition device and the electronic device in the above embodiment, the electronic device is connected to the image acquisition device; the wafer carrier is used to place a wafer, and the image acquisition device acquires an image of the wafer to obtain a wafer image and sends it to the electronic device.

[0123] The above-mentioned probe station, since it adopts the above-mentioned electronic equipment, can also realize the generation of a Group wafer Map, which is convenient for testing the Group wafer.

[0124] Those of ordinary skill in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, storage, database or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory or optical memory, etc. Volatile memory can include random access memory (RAM) or external cache memory. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM).

[0125] In the description of this specification, the description with reference to the terms "some embodiments", "other embodiments", "ideal embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0126] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0127] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the attached claims.

Claims

1. A method for generating a Group wafer map, characterized in that: include: Acquire a wafer image of a group wafer, a center grain coordinate of the group wafer, and a layout parameter of the group wafer; According to the layout parameters of the Group wafer, respectively calculate the number of die units in the Group wafer in a first direction and a second direction, wherein the first direction and the second direction are perpendicular to each other; Based on the center grain coordinates, the layout parameters of the Group wafer, and the number of the grain units in the first direction and the second direction, traverse and analyze the number of preset type grains in each grain unit in the first direction and the second direction within the range of the Group wafer to obtain the number of grain columns and the number of grain rows respectively; Determine the physical coordinates of the grains corresponding to the number of grain columns and the number of grain rows, and determine the grain properties of the corresponding grains according to the distance between the physical coordinates and the center of the wafer, wherein the grain properties include test grain properties and non-test grain properties; A Map of the Group wafer is generated at least according to the number of grain columns, the number of grain rows, the physical coordinates and the grain attributes.

2. The method according to claim 1, characterized in that The layout parameters include wafer size, length of the grain unit in the first direction and length in the second direction, length of the preset type grain in the first direction and length in the second direction, and coordinates of the preset type grain included in a grain unit relative to the grain unit.

3. The method according to claim 2, characterized in that The step of calculating the number of die units in the Group wafer in a first direction and a second direction respectively according to the layout parameters of the Group wafer includes: Calculate the number of the die units in the Group wafer in the first direction according to the wafer size and the length of the die unit in the first direction; The number of the die units in the Group wafer in the second direction is calculated according to the wafer size and the length of the die unit in the second direction.

4. The method according to claim 2, characterized in that: The wafer size includes the wafer radius; The method of traversing and analyzing the number of preset type grains located within the Group wafer range in each grain unit in the first direction and the second direction based on the center grain coordinate, the layout parameters of the Group wafer, and the number of the grain units in the first direction and the second direction to obtain the number of grain columns and the number of grain rows respectively includes: Calculate the coordinates of the preset type of grains in each grain unit in the first direction according to the coordinates of the central grain, the number of the grain units in the first direction, the lengths of the grain unit in the first direction and the second direction, and the coordinates of the preset type of grains included in one grain unit relative to the grain unit; Calculating the distance from the coordinates of each preset type of grain in the first direction to the center of the wafer to obtain a first distance; Record the number of wafers for which the first distance is less than or equal to the wafer radius, and obtain the number of grain columns; Calculate the coordinates of the preset type of grains in each grain unit in the second direction according to the coordinates of the central grain, the number of the grain units in the second direction, the lengths of the grain unit in the first direction and the second direction, and the coordinates of the preset type of grains included in one grain unit relative to the grain unit; Calculate the distance from the coordinates of each preset type of grain in the second direction to the center of the wafer to obtain a second distance; The number of times that the second distance is less than or equal to the wafer radius is recorded to obtain the number of grain rows.

5. The method according to any one of claims 2 to 4, characterized in that: The wafer size includes a wafer radius; the determining of the physical coordinates of the grains corresponding to the number of grain columns and the number of grain rows, and determining the grain properties of the corresponding grains according to the distance between the physical coordinates and the center of the wafer, includes: Calculate the physical coordinates of the grain corresponding to the serial number according to the coordinates of the central grain, the serial numbers corresponding to the number of grain columns and the number of grain rows, the length of the grain unit in the first direction and the length in the second direction, and the length of the preset type of grain in the first direction and the length in the second direction; Calculating the distance between the physical coordinate and the center of the wafer; If the distance is greater than or equal to the wafer radius, marking the grain attribute of the grain corresponding to the physical coordinate as a non-test grain; If the distance is less than the wafer radius, the die attribute of the die corresponding to the physical coordinate is marked as a test die.

6. The method according to claim 5, characterized in that The grain attributes further include edge grain attributes; when the distance is less than the wafer radius, the grain attribute of the grain corresponding to the physical coordinates marked is a test grain, including: Calculating the difference between the wafer radius and a preset edge removal distance; If the distance is greater than or equal to the difference, marking the grain attribute of the grain corresponding to the physical coordinate as an edge grain; If the distance is smaller than the difference, the die attribute of the die corresponding to the physical coordinate is marked as a test die.

7. A Group wafer testing method, characterized in that: include: Based on the Map of the Group wafer generated by the method described in any one of claims 1 to 6, the test die in the Group wafer are tested.

8. A Group wafer map generation device, characterized in that: include: A parameter acquisition module, used to acquire a wafer image of a Group wafer, a center grain coordinate of the Group wafer, and a layout parameter of the Group wafer; A parameter calculation module, used to calculate the number of grain units in the Group wafer in a first direction and a second direction respectively according to the layout parameters of the Group wafer, wherein the first direction and the second direction are perpendicular to each other; A row and column analysis module, configured to traverse and analyze the number of preset type grains in each grain unit in the first direction and the second direction within the range of the Group wafer based on the center grain coordinate, the layout parameters of the Group wafer, and the number of the grain units in the first direction and the second direction, and obtain the number of grain columns and the number of grain rows respectively; an attribute determination module, used to determine the physical coordinates of the grains corresponding to the number of grain columns and the number of grain rows, and determine the grain attributes of the corresponding grains according to the distance between the physical coordinates and the center of the wafer, wherein the grain attributes include test grain attributes and non-test grain attributes; A map generating module is used to generate a map of the Group wafer according to at least the number of grain columns, the number of grain rows, the physical coordinates and the grain attributes.

9. A Group wafer testing device, characterized in that: include: A parameter acquisition module, used to acquire a wafer image of a Group wafer, a center grain coordinate of the Group wafer, and a layout parameter of the Group wafer; A parameter calculation module, used to calculate the number of grain units in the Group wafer in a first direction and a second direction respectively according to the layout parameters of the Group wafer, wherein the first direction and the second direction are perpendicular to each other; A row and column analysis module, configured to traverse and analyze the number of preset type grains in each grain unit in the first direction and the second direction within the range of the Group wafer based on the center grain coordinate, the layout parameters of the Group wafer, and the number of the grain units in the first direction and the second direction, and obtain the number of grain columns and the number of grain rows respectively; an attribute determination module, used to determine the physical coordinates of the grains corresponding to the number of grain columns and the number of grain rows, and determine the grain attributes of the corresponding grains according to the distance between the physical coordinates and the center of the wafer, wherein the grain attributes include test grain attributes and non-test grain attributes; A map generating module, configured to generate a map of the Group wafer according to at least the number of grain columns, the number of grain rows, the physical coordinates and the grain attributes; The test module is used to test the test dies in the Group wafer based on the Map of the Group wafer.

10. An electronic device comprising a memory and a processor, wherein the memory stores a computer program, wherein: The processor implements the steps of the method according to any one of claims 1 to 6 when executing the computer program, or implements the steps of the method according to claim 7 when executing the computer program.

11. A probe station, characterized in that: comprising a slide stage, an image acquisition device, and the electronic device according to claim 10, wherein the electronic device is connected to the image acquisition device; The wafer stage is used to place a wafer, and the image acquisition device acquires an image of the wafer to obtain a wafer image and sends the image to the electronic device.

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