Wafer carrier plate manufacturing method and wafer carrier plate structure
By grinding and polishing the load disk to be processed and photoresist layer processing is combined with the wet etching process to generate fixed grooves and pores of the inclined side walls, the problem of stress interference during the processing of the wafer load disk is solved, the flatness and stability of the load disk is improved, and the wafer damage rate is reduced.
Patent Information
- Application Number
- CN202411600934.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-08
- Publication Date
- 2025-03-04
AI Technical Summary
There is stress interference during the processing of existing wafer load disks, resulting in uneven surfaces, which increases the risk of chipping during wafer transport and testing.
A wafer loading disk production method is adopted, including grinding and polishing the loading disk to be processed, spin coating the photoresist layer and patterning, and fixing grooves and pores of the inclined side walls are generated through a wet etching process to ensure the flatness and structural stability of the loading disk.
It effectively solves the stress interference on the wafer loading during processing, improves the flatness and stability of the loading disk, and reduces the damage rate of the wafer during transport and testing.
Smart Images
Figure CN119560380A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor testing technology, and in particular to a wafer carrier manufacturing method and a wafer carrier structure. Background Art
[0002] During semiconductor wafer testing, the wafers need to be transferred from the material box to the test carrier of the machine. Due to the thin thickness and large size of the wafers, it is easy for them to be broken into pieces during the transfer operation, affecting the yield rate of wafer production.
[0003] In order to facilitate the wafer replacement operation and reduce the probability of wafer breakage accidents, it is necessary to use a wafer carrier as a transfer component. During the transportation process, the wafer needs to be placed on the wafer carrier. The wafer carrier provides suction through the air holes and the exhaust equipment that cooperates with it to firmly support the wafer on the surface of the wafer carrier, so that the wafer carrier can be smoothly transferred to the machine, reducing the possibility of wafer breakage caused by external forces during transportation. However, the existing mechanical processing method will cause extrusion at the corners of the grooves on the carrier, so that the surface flatness of the finally processed wafer carrier does not meet the requirements. When the wafer is fixed by vacuum adsorption through the wafer carrier, this local unevenness will directly lead to wafer breakage. The above problems need to be solved. Summary of the invention
[0004] In order to solve the stress interference on the wafer carrier during the processing and improve the flatness of the wafer carrier, the present application provides a wafer carrier manufacturing method and a wafer carrier structure, which adopts the following technical solutions:
[0005] In a first aspect, the present application provides a method for manufacturing a wafer carrier, comprising:
[0006] A carrier to be processed is provided; the carrier to be processed has an upper surface and a lower surface opposite to each other, the upper surface is in contact with a wafer, and the lower surface is in contact with a vacuum adsorption device;
[0007] Performing grinding and polishing treatment on the upper surface and the lower surface respectively;
[0008] A first photoresist layer is spin-coated on the lower surface, and the first photoresist layer is patterned to obtain a preset pattern; wherein the pattern includes a first pattern arranged around the center of the disk body and a plurality of second patterns spaced apart from and arranged around the first pattern;
[0009] Under the shielding of the first photoresist layer, the lower surface is etched for the first time to obtain a fixing groove; wherein the side wall of the fixing groove is inclined from one side to the other side;
[0010] Spin coating a second photoresist layer on the lower surface, and patterning the second photoresist layer to obtain a preset pattern; wherein the pattern includes a plurality of third patterns spaced apart in the fixed groove;
[0011] Under the shielding of the second photoresist layer, the lower surface is etched for the second time to obtain air holes; wherein the side walls of the air holes are inclined from one side to the other side.
[0012] In one embodiment, the first pattern includes a plurality of first sub-patterns corresponding to the positions of the fixed grooves, and the masking thickness of the first sub-patterns gradually increases from the middle to the outer side;
[0013] The second pattern includes a plurality of second sub-patterns corresponding to the positions of the air holes, and the masking thickness of the second sub-pattern gradually increases from the middle to the outer side.
[0014] In one embodiment, the first etching and the second etching are both wet etching; and the etching solution used in the first wet etching and the second wet etching has the same components, and the proportion of each component in the etching solution during the first wet etching is different from the proportion of each component in the etching solution during the second wet etching.
[0015] In one embodiment, the etching solution is a ferric chloride solution, and the ratio of ferric chloride to deionized water in the ferric chloride solution during the first wet etching is 1:3 or 1:4, and the ratio of ferric chloride to deionized water in the ferric chloride solution during the second wet etching is 1:5 or 1:6.
[0016] In one embodiment, the first wet etching and the second wet etching use the same etching solution composition and ratio, but different etching times.
[0017] In one embodiment, the first etching comprises:
[0018] Taking the smallest cross section in the pore as a reference, the fixing groove is firstly anisotropically etched, and then the remaining part of the fixing groove is isotropically etched.
[0019] In one embodiment, the anisotropic etching penetrates from the lower surface of the carrier to be processed to the upper surface of the carrier to be processed.
[0020] In one embodiment, the second etching comprises:
[0021] Taking the smallest cross section in the pore as a reference, the pore is firstly anisotropically etched on the basis of the fixing groove, and then the remaining part of the pore is isotropically etched.
[0022] In a second aspect, the present application provides a wafer carrier, which is manufactured using any of the wafer carrier manufacturing methods described above.
[0023] In one embodiment, the wafer carrier includes a disk body, and a side of the disk body for connecting to a carrying device is provided with a plurality of fixing grooves, the fixing grooves include a first fixing groove and a plurality of second fixing grooves, the first fixing groove is arranged in a circle center of the disk body, the first fixing groove and the second fixing groove are arranged at intervals, a plurality of the second fixing grooves are arranged around the first fixing groove, a plurality of the second fixing grooves are arranged at intervals in pairs, the fixing groove is provided with a plurality of air holes penetrating the surface of the disk body, and the air holes are arranged at intervals along the length direction of the fixing groove.
[0024] In one of the embodiments, the side wall of the fixing groove is inclined, and the area of the fixing groove gradually increases from a side close to the air hole to a side far from the air hole.
[0025] In one of the embodiments, the side wall of the air hole is inclined, and the area of the air hole gradually increases from a side away from the fixing groove to a side close to the fixing groove.
[0026] In summary, compared with the prior art, the technical solution provided by this application has at least the following beneficial effects:
[0027] The present application cuts the substrate to be processed by mechanical processing to obtain a rough carrier, obtains the carrier substrate after grinding and polishing, etches the carrier substrate mask for the first time, specifically adopts a chemical etching process to process the carrier substrate to generate a fixed groove, the side wall of the fixed groove is inclined, and the area of the fixed groove gradually increases from the side close to the pore to the side away from the pore, and then etches for the second time after masking, specifically adopts a chemical etching process to process the fixed groove to generate a plurality of pores, the pores penetrate the carrier, the side wall of the pores is inclined, and the area of the pores gradually increases from the side away from the fixed groove to the side close to the fixed groove. The wafer carrier generated by non-stress processing effectively solves the stress interference to the wafer carrier during the processing, ensures that the flatness and roughness will not be deformed and deteriorated during processing, and reduces the damage rate during wafer transportation and testing. BRIEF DESCRIPTION OF THE DRAWINGS
[0028] Figure 1 It is a flow chart of a method for manufacturing a wafer carrier described in an embodiment of the present application.
[0029] Figure 2 It is a schematic diagram of the bottom structure of a wafer carrier described in an embodiment of the present application.
[0030] Figure 3 It is a schematic diagram of the side cross-sectional structure of the wafer carrier described in the embodiment of the present application.
[0031] Description of reference numerals:
[0032] 1. disk body; 2. fixing groove; 21. first fixing groove; 22. second fixing groove; 3. air hole; 100. wafer; 200. exhaust device. DETAILED DESCRIPTION
[0033] The following combination Figure 1-Figure 3 The present application is described in further detail. The terms used in the embodiments of the present application are only for the purpose of describing specific embodiments and are not intended to be limiting.
[0034] Reference Figure 1 The present application relates to a method for manufacturing a wafer carrier, comprising:
[0035] A carrier to be processed is provided; the carrier to be processed has an upper surface and a lower surface opposite to each other, the upper surface is in contact with a wafer, and the lower surface is in contact with a vacuum adsorption device;
[0036] The upper surface and the lower surface are respectively subjected to grinding and polishing treatment;
[0037] A first photoresist layer is spin-coated on the lower surface, and the first photoresist layer is patterned to obtain a preset pattern; wherein the pattern includes a first pattern arranged around the center of the disk body and a plurality of second patterns spaced apart from and arranged around the first pattern;
[0038] Under the shielding of the first photoresist layer, the lower surface is etched for the first time to obtain a fixing groove 2; wherein the side wall of the fixing groove 2 is inclined from one side to the other side;
[0039] Spin-coating a second photoresist layer on the lower surface, and patterning the second photoresist layer to obtain a preset pattern; wherein the pattern includes a plurality of third patterns spaced apart in the fixing groove 2;
[0040] Under the shielding of the second photoresist layer, the lower surface is etched for the second time to obtain the pore 3; wherein the side wall of the pore 3 is inclined from one side to the other side.
[0041] Specifically, the embodiment of the present application processes a carrier to be processed having an upper surface and a lower surface arranged opposite to each other, obtains a carrier substrate after grinding and polishing, performs a first wet etching on the carrier substrate mask, specifically, uses a chemical etching process to process the carrier substrate to generate a fixed groove 2, the side wall of the fixed groove 2 is inclined, and the area of the fixed groove 2 gradually increases from a side close to the pore 3 to a side away from the pore 3, and then performs a second wet etching after masking, specifically, uses a chemical etching process to process the fixed groove 2 to generate a plurality of pores 3, the pores 3 penetrate the carrier, the side wall of the pore 3 is inclined, and the area of the pore 3 gradually increases from a side away from the fixed groove 2 to a side close to the fixed groove 2, and the wafer carrier generated by non-stress processing effectively solves the stress interference on the wafer carrier during the processing process, ensures that the flatness and roughness will not be deformed and deteriorated during processing, and reduces the damage rate of the wafer 100 during transportation and testing.
[0042] As one of the embodiments, the upper surface and the lower surface are respectively ground and polished to obtain a carrier disc to be processed with a surface roughness Ra less than 0.16 and a thickness less than 1 mm. The depth of the fixed groove 2 is less than or equal to 0.5 times the thickness of the carrier disc to be processed. The diameter of the pores 3 is 33 to 330 um. The spacing between the pores 3 in the same fixed groove 2 is greater than or equal to 5 mm. The substrate to be processed is cut by a mechanical processing process to obtain the carrier disc to be processed.
[0043] Specifically, the substrate to be processed is cut by mechanical processing to obtain a rough carrier blank, and the thickness of the rough carrier blank is 0.5 to 1 mm thicker than the final product. The rough carrier blank is then masked and polished, and after grinding and polishing, a carrier substrate with a surface roughness Ra less than 0.16 and a thickness less than 1 mm is obtained. The first etching operation is performed on the carrier substrate mask, and a shape structure is made using a photomask, which greatly improves the restrictions on the processing pattern of the carrier surface compared to mechanical processing. Specifically, the carrier substrate is processed by a chemical etching process to generate a fixed groove 2, the depth of the fixed groove 2 is less than or equal to 0.5 times the thickness of the carrier substrate, the side wall of the fixed groove 2 is inclined, and the area of the fixed groove 2 gradually increases from the side close to the pore 3 to the side away from the pore 3. Then, a second etching operation is performed, specifically, a chemical etching process is used to process the fixed groove 2 to generate a plurality of pores 3, the pores 3 penetrate the carrier, the diameter of the pores 3 is 33 to 330 um, the spacing between the pores 3 in the same fixed groove 2 is greater than or equal to 5 mm, the side walls of the pores 3 are inclined, and the area of the pores 3 gradually increases from the side away from the fixed groove 2 to the side close to the fixed groove 2. The wafer carrier generated by non-stress processing effectively solves the stress interference to the wafer carrier during the processing, ensures that the flatness and roughness will not be deformed and deteriorated during processing, thereby reducing the damage rate of the wafer 100 during transportation and testing. Figure 2 and Figure 3An embodiment of the present application provides a wafer carrier, including a plate body, a side of the plate body for connecting to a carrying device is provided with a plurality of fixing grooves 2, the fixing grooves 2 are provided with a plurality of air holes 3 penetrating the surface of the plate body, and the air holes 3 are arranged at intervals along the length direction of the fixing grooves 2.
[0044] Specifically, in order to facilitate the wafer replacement operation and reduce the probability of wafer breakage accidents, the present application provides a wafer carrier that allows the wafer 100 to be smoothly transported and tested. The wafer 100 is carried by the disk body 1 of the wafer carrier, and the carrying device is a device related to the test operation. The wafer carrier is installed on the carrying device to test the wafer 100. A fixing groove 2 is provided on one side of the disk body 1 for connecting to an external carrying device, and the disk body 1 is firmly installed on the carrying device through the fixing groove 2, so that the wafer 100 is transported to a suitable detection position. During the process of transporting and testing the wafer 100, the air holes 3 are connected to the external vacuum device 200, i.e., the vacuum adsorption device. The vacuum adsorption device 200 performs vacuum adsorption on the wafer 100 through the air holes 3, thereby firmly adsorbing the wafer 100 on the surface of the disk 1, and the air holes 3 are arranged at intervals along the length direction of the fixed groove 2, so that the wafer 100 can be subjected to uniform force, reducing the stress interference to the wafer 100 during the transportation and processing, and reducing the damage rate of the wafer 100 during the transportation and testing process.
[0045] Among them, the fixed groove 2, the air hole 3 and the external exhaust device 200 cooperate with each other. The disk body 1 is specifically installed on the exhaust port of the exhaust device 200 through the fixed groove 2. After the exhaust port of the exhaust device 200 and the fixed groove 2 are connected to form a relatively closed space, the exhaust port extracts the air in the fixed groove 2, the fixed groove 2 is connected with the air hole 3, and the air hole 3 is connected with the outside of the disk body 1, so that the air hole 3 vacuum adsorbs the wafer 100 placed on the surface of the disk body 1, thereby playing a role in stably adsorbing the wafer 100 on the surface of the disk body 1.
[0046] As one embodiment, the fixing groove 2 includes a first fixing groove 21, and the first fixing groove 21 is arranged in the center of the disc body 1. The first fixing groove 21 is arranged in a circular ring shape.
[0047] Specifically, the fixing groove 2 of the present application includes a first fixing groove 21. In the present embodiment, the first fixing groove 21 is set to be annular, and the center of the annular first fixing groove 21 coincides with the center of the disk body 1, so that the first fixing groove 21 can be set around the center of the disk body 1, so that the disk body 1 fixes the suction device 200 through the first fixing groove 21. The first fixing groove 21 is annular and is located closer to the center of the circle, which can provide uniform fixing support in the central area of the entire disk body 1, help to disperse the force applied to the disk body 1, and reduce deformation or instability caused by concentrated pressure. And the annular first fixing groove 21 can provide higher alignment accuracy, so that the fixing component can accurately align the center of the disk body 1 during installation.
[0048] When the disc 1 is fixed on the exhaust device 200, the exhaust device 200 applies an exhaust force to the air holes 3 on the first fixing groove 21 through the first fixing groove 21, so that the air holes 3 arranged in an interval and annular shape can adsorb the wafer 100. The annular air holes 3 are located in the middle of the wafer 100. The central area of the wafer 100 usually requires a uniform adsorption force to reduce warping or cracking caused by force concentration. Therefore, the air holes 3 arranged in an annular shape can apply a uniform adsorption force to the middle of the wafer 100. The air holes 3 arranged in an annular shape can provide a moderate adsorption force, thereby stabilizing the wafer 100.
[0049] As one implementation manner, the first pattern includes a plurality of first sub-patterns corresponding to the positions of the fixed grooves, and the masking thickness of the first sub-patterns gradually increases from the middle to the outer side;
[0050] The second pattern includes a plurality of second sub-patterns corresponding to the positions of the air holes, and the masking thickness of the second sub-pattern gradually increases from the middle to the outer side.
[0051] The first etching and the second etching are both wet etching; and the etching solution used in the first wet etching and the second wet etching has the same components, and the proportion of each component in the etching solution during the first wet etching is different from the proportion of each component in the etching solution during the second wet etching.
[0052] Specifically, the first wet etching usually takes from a few minutes to more than ten minutes depending on the material and the required groove depth, and the optimal time needs to be determined through experiments. The mask should be designed to form an inclined inner sidewall groove, usually a trapezoid or other shape to ensure the inclination angle of the groove wall after etching. Due to the shielding effect of the photoresist and the selectivity of the etching solution, the mask thickness of the first sub-pattern gradually increases from the middle to the outside, and a fixed groove with an inner sidewall inclined from one side to the other will be formed after the first etching.
[0053] The etching time of the second wet etching should be relatively short, usually within a few minutes, to ensure that the depth and size of the pores are appropriate. Photolithography is performed to form a pore pattern corresponding to the fixed groove. The pores are designed to be connected to the fixed groove, and the inner sidewalls also have an inclined shape. The second etching uses the existing fixed groove shape and the shielding effect of the photoresist layer, and the masking thickness of the second sub-pattern gradually increases from the middle to the outside, forming pores with an inner sidewall inclined from one side to the other.
[0054] During the etching process of the photoresist in the embodiment of the present application, the photoresist layer at the bottom is thinner and the etching speed is faster, while the etching speed is slower at the top due to the thicker photoresist layer. This thickness difference leads to the formation of inclined walls, and during the wet etching process, the difference in selectivity of chemical reactions for different materials results in different etching rates under the same etching conditions, thereby forming a trapezoidal shape.
[0055] As one embodiment, the first etching liquid used in the first wet etching is a ferric chloride solution, and the ferric chloride is mixed with deionized water in a ratio of 1:3 or 1:4. The second etching liquid used in the second wet etching is a ferric chloride solution, and the ferric chloride is mixed with deionized water in a ratio of 1:5 or 1:6. The etching liquid components and proportions used in the first wet etching and the second wet etching are the same, but the etching time is different.
[0056] Specifically, the specific proportion of the first wet etching depends on the required etching rate and material type. The first etching requires a higher etching rate to quickly form a fixed groove, so a stronger acid solution is needed. Increasing the proportion of the solution helps to increase the etching rate and ensure that it can quickly penetrate the photoresist layer and etch into the carrier material. The purpose of the second etching is to finely form pores. The etching rate is relatively low, so a more dilute solution is needed to avoid excessive depth or shape distortion caused by too fast etching. The diluted solution can make the etching more uniform and avoid over-etching.
[0057] The first etching includes: taking the minimum cross section in the pore as a reference, first anisotropically etching the fixed groove, and then isotropically etching the remaining part of the fixed groove. The anisotropic etching runs from the lower surface of the carrier to be processed to the upper surface of the carrier to be processed. The second etching includes: taking the minimum cross section in the pore as a reference, first anisotropically etching the pore on the basis of the fixed groove, and then isotropically etching the remaining part of the pore.
[0058] Specifically, the embodiment of the present application may adopt a physical etching method, such as ICP etching, which can accelerate the overall etching rate; in addition, after a small hole is obtained by ICP etching, it is convenient for the solution to enter during the subsequent wet etching, further accelerating the etching rate. The overlapping part of the embodiment of the present application is the minimum cross-section of the pore.
[0059] As one embodiment, the fixing groove 2 includes a plurality of second fixing grooves 22, the first fixing groove 21 and the second fixing groove 22 are arranged at intervals, and the plurality of second fixing grooves 22 are arranged around the first fixing groove 21, and the plurality of second fixing grooves 22 are arranged at intervals in pairs. The second fixing grooves 22 are arranged in a strip shape.
[0060] Specifically, the fixing groove 2 of the present application also includes a second fixing groove 22. In the embodiment of the present application, the second fixing groove 22 is arranged in a strip shape. Several strip-shaped second fixing grooves 22 are spaced and surround the center of the disk body 1. The end of the second fixing groove 22 points to the center of the disk body 1, and the extension line of the second fixing groove 22 can be connected to the center of the disk body 1, thereby bisecting the circular disk body 1. The other end is away from the center of the disk body 1, and the first fixing groove 21 is closer to the center of the disk body 1 than the second fixing groove 22. The second fixing grooves 22 are distributed on the periphery of the first fixing groove 21. Through the spaced arrangement of multiple strip-shaped grooves, external accessories or components can be effectively locked and fixed, increasing the stability of the entire structure. Since the end of the second fixing groove 22 points to the center of the circle, the disk body 1 can be better aligned and supported during the fixing process to prevent the component from being offset or rotated. The strip-shaped second fixing grooves 22 further enhance the alignment function, especially in the case of multiple grooves, the positioning of the component is corrected by evenly distributed grooves. The second fixing grooves 22 surround the center of the disk body 1 and are spaced apart. This layout helps to provide uniform fixing force at different positions, so that the installed components can be kept in the predetermined position and are not easily moved due to external force or vibration.
[0061] When the disk body 1 is fixed on the exhaust device 200, the exhaust device 200 applies an exhaust force to the air holes 3 on the second fixing grooves 22 through the second fixing grooves 22, so as to play the role of adsorbing the portion outside the center area of the wafer 100 by separating the air holes 3. The strip-shaped second fixing grooves 22 are arranged outside the surface of the disk body 1. This area is at the edge area of the wafer 100, and the adsorption force needs to be lighter. The closer to the outside, the lighter the adsorption force is needed. Therefore, the distance between the strip-shaped second fixing grooves 22 gradually increases from the end close to the center of the disk body 1 to the end far from the center of the disk body 1, so as to avoid excessive force on the edge part, thereby reducing damage or cracking of the edge.
[0062] As one implementation manner, each of the first fixing groove 21 and the second fixing groove 22 is provided with 5 to 10 air holes 3 .
[0063] Specifically, the embodiment of the present application is provided with 5 to 10 air holes 3. When the disc 1 is fixed to the exhaust device 200 through the first fixing groove 21 and the second fixing groove 22, the exhaust device 200 adsorbs the wafer 100 through the air holes 3 on each fixing groove 2. The embodiment of the present application is for a 6-inch wafer 100, and the volume of the disc 1 is set to be greater than or equal to 1.2 times of the wafer 100. The 5 to 10 air holes 3 corresponding to the 6-inch wafer 100 can firmly adsorb the wafer 100 without bringing too much adsorption force to the wafer 100, thereby achieving a stable adsorption of the wafer 100 without causing damage.
[0064] As one embodiment, the pores 3 are configured as chemically etched holes.
[0065] Specifically, the pores 3 of the embodiment of the present application are processed using a chemical etching process. The wafer carrier must have an electrical conduction function, and its material is the same as the copper and its alloys used in the circuit board, or the material of the copper surface metal layer. The pores 3 obtained by chemical etching can make the transitions and corners of the pores 3 smoother. Chemical etching is a non-stress processing and will not have a significant impact on the existing structure, thereby improving the yield rate. When the wafer 100 contacts and is adsorbed on the chemical etching hole, the chemical etching hole makes the surface of the disk 1 smoother, thereby ensuring the flatness and roughness, and will not deform or deteriorate during processing.
[0066] As one implementation manner, the diameter of the pore 3 is 33-330 um.
[0067] Specifically, the diameter of the pore 3 set in the embodiment of the present application is 33-330um, and the minimum size of the pore 3 is 1 / 3 of the thickness of the disk body 1, and the maximum does not exceed 500um. In the embodiment of the present application, the disk body 1 of the wafer carrier is between 0.1 and 1mm, so the diameter of the pore 3 is set to 33-330um. There is no one-to-one correspondence between the pore 3 of the exhaust device 200 and the pore 3 of the disk body 1. The pore 3 diameter is set to 33-330um, which can more stably adsorb the 6-inch wafer 100.
[0068] As one implementation manner, the spacing between the air holes 3 in the same fixing groove 2 is greater than or equal to 5 mm.
[0069] Specifically, the spacing between the air holes 3 in the same fixing groove 2 of the embodiment of the present application is greater than or equal to 5 mm, reducing the stress concentration problem caused by too dense. The uniform and moderate adsorption force can effectively distribute the stress and reduce the local stress concentration, thereby protecting the wafer 100 from damage.
[0070] As one of the implementation modes, the side wall of the fixing groove 2 is inclined, and the area of the fixing groove 2 gradually increases from a side close to the air hole 3 to a side away from the air hole 3 .
[0071] Specifically, the fixing groove 2 of the embodiment of the present application includes a first fixing groove 21 and a second fixing groove 22, and the side walls of the first fixing groove 21 and the second fixing groove 22 are both inclined, so that the tray body 1 can be installed more conveniently when it is installed at the corresponding shape of the exhaust port through the fixing groove, thereby reducing the docking operation cost of the tray body 1 and the exhaust device 200. And the fixing groove 2 is connected to the air hole 3 in a gradually decreasing form, so that the process of extracting gas is more gentle, so that the wafer 100 is more stable when being adsorbed.
[0072] As one implementation manner, the area of the air hole 3 gradually increases from a side away from the fixing groove 2 to a side close to the fixing groove 2 .
[0073] Specifically, the area of one side of the pore 3 in the embodiment of the present application connecting the fixed groove 2 and the exhaust device 200 is larger, so that when the exhaust device 200 performs the suction operation, more gas can be adsorbed within a certain period of time, improving the timeliness of the adsorption step, and the area of the other side is smaller, which can reduce the adsorption area as much as possible, provide sufficient adsorption force for the wafer 100 within the appropriate adsorption force range, and enhance the adsorption effect. At the same time, the deformation damage to the wafer caused by the pressure stress in the adsorption hole area is reduced.
[0074] An embodiment of the present application provides a wafer testing system, which includes any one of the wafer carriers described above.
[0075] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working process of the above-described device and product can refer to the corresponding process in the aforementioned method embodiment, and will not be repeated here.
[0076] In the several embodiments provided in this application, it should be understood that the disclosed products can be implemented in other ways.
[0077] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.
[0078] As described above, the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.
Claims
1. A method for manufacturing a wafer carrier, characterized in that: include: A carrier to be processed is provided; the carrier to be processed has an upper surface and a lower surface opposite to each other, the upper surface is in contact with a wafer, and the lower surface is in contact with a vacuum adsorption device; Performing grinding and polishing treatment on the upper surface and the lower surface respectively; A first photoresist layer is spin-coated on the lower surface, and the first photoresist layer is patterned to obtain a preset pattern; wherein the pattern includes a first pattern arranged around the center of the disk body and a plurality of second patterns spaced apart from and arranged around the first pattern; Under the shielding of the first photoresist layer, the lower surface is etched for the first time to obtain a fixing groove; wherein the side wall of the fixing groove is inclined from one side to the other side; Spin coating a second photoresist layer on the lower surface, and patterning the second photoresist layer to obtain a preset pattern; wherein the pattern includes a plurality of third patterns spaced apart in the fixed groove; Under the shielding of the second photoresist layer, the lower surface is etched for the second time to obtain air holes; wherein the side walls of the air holes are inclined from one side to the other side.
2. The method for manufacturing a wafer carrier according to claim 1, characterized in that: The first pattern includes a plurality of first sub-patterns corresponding to the positions of the fixed grooves, and the masking thickness of the first sub-pattern gradually increases from the middle to the outer side; The second pattern includes a plurality of second sub-patterns corresponding to the positions of the air holes, and the masking thickness of the second sub-pattern gradually increases from the middle to the outer side.
3. The method for manufacturing a wafer carrier according to claim 2, characterized in that: The first etching and the second etching are both wet etching; and the etching solution used in the first wet etching and the second wet etching has the same components, and the proportion of each component in the etching solution during the first wet etching is different from the proportion of each component in the etching solution during the second wet etching.
4. The method for manufacturing a wafer carrier according to claim 3, characterized in that: The etching liquid is a ferric chloride solution, and the ratio of ferric chloride to deionized water in the ferric chloride solution during the first wet etching is 1:3 or 1:4, and the ratio of ferric chloride to deionized water in the ferric chloride solution during the second wet etching is 1:5 or 1:
6.
5. The method for manufacturing a wafer carrier according to claim 3, characterized in that: The first wet etching and the second wet etching use the same etching solution composition and ratio, but different etching times.
6. The method for manufacturing a wafer carrier according to claim 2, characterized in that: The first etching comprises: Taking the smallest cross section in the pore as a reference, the fixing groove is firstly anisotropically etched, and then the remaining part of the fixing groove is isotropically etched.
7. The method for manufacturing a wafer carrier according to claim 6, characterized in that: The anisotropic etching penetrates from the lower surface of the carrier to be processed to the upper surface of the carrier to be processed.
8. The method for manufacturing a wafer carrier according to claim 6, characterized in that: The second etching comprises: Taking the smallest cross section in the pore as a reference, the pore is firstly anisotropically etched on the basis of the fixing groove, and then the remaining part of the pore is isotropically etched.
9. A wafer carrier, characterized in that: The wafer carrier is manufactured using the wafer carrier manufacturing method described in any one of claims 1-6.
10. The wafer carrier according to claim 9, characterized in that: The wafer carrier includes a plate body, and a side of the plate body for connecting to a carrying device is provided with a plurality of fixing grooves, the fixing grooves include a first fixing groove and a plurality of second fixing grooves, the first fixing groove is arranged in a circle center of the plate body, the first fixing groove and the second fixing groove are arranged at intervals, a plurality of the second fixing grooves are arranged around the first fixing groove, a plurality of the second fixing grooves are arranged at intervals in pairs, the fixing groove is provided with a plurality of air holes penetrating the surface of the plate body, and the air holes are arranged at intervals along the length direction of the fixing groove.
11. The wafer carrier according to claim 10, characterized in that: The side wall of the fixing groove is arranged obliquely, and the area of the fixing groove gradually increases from a side close to the air hole to a side far away from the air hole.
12. The wafer carrier according to claim 10, characterized in that: The side wall of the air hole is arranged obliquely, and the area of the air hole gradually increases from a side away from the fixing groove to a side close to the fixing groove.