SiC epitaxial merging detection method and system

Abstract

The invention relates to the technical field of semiconductors, in particular to a SiC epitaxy merging detection method and system.According to the SiC epitaxy merging detection method and system, a graphite ring or a wafer or a graphite disc can be independently subjected to edge searching and deviation correction through a merging and splitting module, an edge finder and a deviation correction platform, and a mechanical arm can complete transferring of the wafer or the graphite ring or the graphite disc through fixed grabbing or placing actions; the positioning precision of the wafer is improved, the positioning error in the wafer installation process is effectively eliminated, the combination and separation module can quickly complete the separation and combination action between the graphite ring and the wafer or the graphite disc, the wafer, the graphite ring and the graphite disc which are combined can be smoothly put into an epitaxial growth environment, and the wafer processing quality is ensured; and through arrangement of the laser sensor and the acquisition equipment, automatic detection is realized, manpower is effectively saved, and positioning errors caused by manpower are reduced.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a SiC epitaxial merging detection method and system. Background Art

[0002] Generally, a semiconductor device manufacturing process is performed by repeatedly performing a plurality of unit processes, such as an exposure process, an etching process, a diffusion process, a deposition process, and a metal process on a wafer, and the wafer loaded on a carrier within the facility is introduced or taken out by a wafer transfer device.

[0003] The wafer transfer device is equipped with a robot that supports the wafer at the front end of the arm. The wafer is transferred while being supported by the robot. The wafer is supported by a carrier during transfer, which facilitates the smooth loading of the wafer into the epitaxial equipment. However, the traditional detection method can no longer meet the production needs of wafer manufacturers. The traditional detection method not only causes manufacturers to spend more labor costs, but also affects production efficiency due to positioning errors caused by operators, reducing processing quality. Summary of the invention

[0004] In view of the deficiencies in the prior art, the present invention provides a SiC epitaxial merging detection method and system, which can independently perform edge finding and deviation correction on a graphite ring, a wafer or a graphite disk, thereby improving the positioning accuracy of the wafer, effectively eliminating the positioning error in wafer installation, and facilitating the smooth placement of the merged wafer, graphite ring and graphite disk into an epitaxial growth environment, thereby realizing automated detection, effectively saving labor, reducing the positioning error caused by labor, and ensuring the wafer processing quality.

[0005] In order to solve the above technical problems, the present invention adopts the following technical solutions:

[0006] A SiC epitaxial merging detection method comprises the following steps:

[0007] S01. Use a merging and splitting module, an edge finder and a correction platform to independently complete edge finding and correction for the graphite ring, wafer and graphite disk respectively. Use a laser sensor to detect whether the merging and splitting module has a wafer placed thereon. When it is detected that the merging and splitting module has not placed a wafer, use a robot to place the wafer on the merging and splitting module so that the center position and the hypotenuse direction of the wafer and the graphite ring are consistent.

[0008] S02, using a merging and splitting module to merge the wafer and the graphite ring, and using a laser sensor to detect whether the merging and splitting module has a graphite disk placed therein;

[0009] S03, when it is detected that the merging and splitting module does not have a graphite disk, a manipulator is used to place the graphite disk in the merging and splitting module so that the center position and the bevel direction of the graphite disk and the graphite ring are consistent, and a laser sensor is used to detect the flatness error between the graphite ring and the graphite disk;

[0010] S04. When the flatness error between the graphite ring and the graphite disk is within a specified range, the graphite ring and the graphite disk are merged by a merging and splitting module, and a collection device is used to detect whether the wafer has fragments. If the wafer has no fragments, the merged wafer, graphite ring and graphite disk are placed in an epitaxial growth environment.

[0011] Wherein, in step S01, a disk-ring placing box for storing a combination of graphite rings and graphite disks is provided, the merging and splitting module comprises a base frame, a plurality of ring brackets connected to the top of the base frame, a tray and a lifting mechanism, the ring brackets are distributed around the base frame, the lifting mechanism is drivingly connected to the tray, the base frame is penetrated with movable openings from top to bottom, the output end of the lifting mechanism is penetrated through the movable opening, the lifting mechanism drives the tray to move up and down, so that the tray moves up and down inside the ring bracket;

[0012] When it is necessary to find the edge of the graphite disk, the lifting mechanism drives the tray to move upward to the required height, the manipulator transfers the combination of the graphite disk and the graphite ring from the disk and ring placement box to the merging and splitting module, the ring bracket and the tray respectively support the graphite ring and the graphite disk, the lifting mechanism drives the tray to move downward, so that the graphite disk moves downward synchronously with the tray to separate from the graphite ring, thereby separating the graphite disk from the merging and splitting module, the manipulator transfers the separated graphite disk to the correction platform, the correction platform is provided with a third positioning reference, the correction platform positions and finds the edge of the graphite disk according to the third positioning reference to determine the position and angle of the graphite disk.

[0013] The merging and splitting module further includes a detaching and splitting driving mechanism, a detaching and splitting annular light source, a surface light source and a collection device. The detaching and splitting driving mechanism is used to drive the base frame to move along the X-axis and the Y-axis and to make the base frame rotate. The detaching and splitting annular light source is located between the base frame and the surface light source. The front end of the collection device passes through the surface light source and corresponds to the detaching and splitting annular light source. The collection device is provided with a second positioning reference. The detaching and splitting driving mechanism is connected to the collection device. The collection device transmits the position and angle information of the graphite ring to the detaching and splitting driving mechanism.

[0014] When the graphite ring is edge-finding and deflection-correcting, a laser sensor is used to detect whether the ring bracket has a wafer. When it is detected that the ring bracket has no wafer, a robot is used to place the wafer after edge-finding on the ring bracket. The ring bracket supports the graphite ring, and the surface light source and the detachable annular light source are used to supplement the light for the graphite ring and the collection device. The collection device takes visual photos to determine the position and angle of the graphite ring. The detachable driving mechanism drives the ring bracket to move along the X-axis and / or Y-axis through the base frame and rotates the ring bracket, so that the graphite ring determines its own position and angle according to the second positioning reference, thereby realizing precise positioning of the graphite ring.

[0015] Wherein, the edge finder is provided with a first positioning reference, and the edge finder determines the position and angle of the wafer according to the first positioning reference;

[0016] When the wafer needs to be placed in the merging and splitting module, the graphite ring determines its own position and angle according to the second positioning reference, the lifting mechanism drives the tray to move upward inside the graphite ring to the required height, and the robot places the wafer on the tray so that the center position and hypotenuse direction of the wafer and the graphite ring are consistent.

[0017] Wherein, in step S02;

[0018] When the wafer needs to be merged with the graphite ring, the graphite ring determines its own position and angle according to the second positioning reference, the lifting mechanism drives the tray to move upward inside the graphite ring to the required height, the manipulator places the wafer on the tray so that the center position and the hypotenuse direction of the wafer and the graphite ring are consistent, and the lifting mechanism drives the tray and the wafer to descend synchronously until the wafer is supported by the graphite ring, thereby realizing the merging of the wafer and the graphite ring;

[0019] When the laser sensor detects whether a graphite disk is placed in the merging and splitting module, the laser sensor collects data from the placement space of the graphite disk in the merging and splitting module. When the graphite disk is not placed in the placement space, the data collected by the laser sensor exceeds the predetermined range, which means that no graphite disk is placed in the merging and splitting module.

[0020] Wherein, in steps S03 and S04, the laser sensor acquires data from at least three acquisition points on the graphite ring or graphite disk, respectively, and fits at least three points on the graphite disk to form a disk ring plane, and calculates whether the vertical distance from each acquisition point on the graphite ring to the disk ring plane is within a predetermined range, so as to determine the flatness error between the graphite ring and the graphite disk;

[0021] When it is necessary to merge the graphite ring with the graphite disk, and merge the wafer with the graphite ring, the graphite disk determines its own position and angle according to the third positioning reference, the lifting mechanism drives the tray down to the required height, the manipulator places the graphite disk on the tray, and the lifting mechanism drives the tray to move upward until the graphite disk and the graphite ring are merged, and the wafer, graphite ring and graphite disk are merged.

[0022] The deflection correction platform includes a deflection correction table, a deflection correction driving mechanism connected to the deflection correction table, a deflection correction annular light source and a deflection correction collector. The deflection correction driving mechanism is used to drive the deflection correction table to move along the X-axis and the Y-axis and to make the deflection correction table rotate. The deflection correction annular light source is located between the deflection correction table and the deflection correction collector. The deflection correction collector corresponds to the deflection correction annular light source. The deflection correction collector is provided with a third positioning reference. The deflection correction driving mechanism is electrically connected to the deflection correction collector.

[0023] When the graphite disk is finding its edge, the robot grabs the graphite disk and places it on the deflection correction table, which supports the graphite disk. The deflection correction ring light source provides supplementary light for the graphite disk. The deflection correction collector takes visual photos to determine the position and angle of the graphite disk. The deflection correction drive mechanism drives the deflection correction table to move along the X-axis and / or Y-axis according to the data obtained by the deflection correction collector, and makes the deflection correction table rotate, so that the graphite disk determines its own position and angle according to the third positioning reference, thereby realizing precise positioning of the graphite disk.

[0024] Wherein, in step S04, the collection device collects the wafer surface, and when cracks or fragments exist on the wafer surface, the robot takes out the combined wafer, graphite ring and graphite disk from the combining and splitting module;

[0025] When there are no cracks or fragments on the wafer surface, the robot places the combined wafer, graphite ring and graphite disk into the epitaxial growth environment.

[0026] Wherein, the ring bracket is provided with a ring support opening, and when the ring bracket supports the graphite ring, the bottom outer edge of the graphite ring extends into the ring support opening;

[0027] The bottom end of the graphite ring is provided with an annular disk accommodating groove. When the graphite disk and the graphite ring are combined, the top outer edge of the graphite disk extends into the disk accommodating groove. The top end of the graphite ring is provided with an annular sheet accommodating groove. When the wafer and the graphite ring are combined, the bottom outer edge of the wafer extends into the sheet accommodating groove.

[0028] The present invention also includes a SiC epitaxial merger detection system, including a laser sensor, a deviation correction collector and a collection device;

[0029] The laser sensor is used to detect whether there are wafers, graphite rings and graphite disks in the merging and disassembling module, and can detect the flatness error between the graphite rings and the graphite disks;

[0030] The deviation correction collector is used to visually take photos to determine the position and angle of the graphite disk, and to determine the position and angle of the graphite disk using a third positioning reference;

[0031] The acquisition device is used to visually take pictures to determine the position and angle of the graphite ring, and can determine the position and angle of the graphite ring with a second positioning reference; and to acquire wafer surface information.

[0032] Beneficial effects of the present invention:

[0033] The present invention can independently perform edge finding and deviation correction on graphite rings, wafers or graphite disks through the merging and splitting modules, edge finders and deviation correction platforms. The manipulator can complete the transfer of wafers, graphite rings or graphite disks by adopting fixed grabbing or placing actions, thereby improving the positioning accuracy of wafers and effectively eliminating positioning errors in wafer installation. The merging and splitting modules can quickly complete the splitting and merging actions between graphite rings and wafers or graphite disks, which is conducive to smoothly placing the merged wafers, graphite rings and graphite disks into an epitaxial growth environment, realizing automated detection, effectively saving labor, reducing positioning errors caused by labor, and ensuring wafer processing quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 A three-dimensional diagram of the structure in the SiC epitaxial merger detection method and system.

[0035] Figure 2 This is a schematic diagram of the structure when the graphite ring and graphite disk are combined.

[0036] Figure 3 Schematic diagram of the exploded structure with wafer, graphite ring and graphite disk.

[0037] Figure 4 It is a three-dimensional diagram showing the graphite ring, graphite disk and the combined split module separated.

[0038] Figure 5 This is a schematic diagram of the positional relationship between the tray, graphite ring and ring bracket before the wafer and graphite ring are combined.

[0039] Figure 6 Schematic diagram of the exploded structure of the laser sensor, chassis, ring bracket and tray.

[0040] Figure 7 Schematic diagram of the exploded structure of the disassembly and assembly of the drive mechanism.

[0041] Figure 8 Schematic diagram of the three-dimensional structure of the correction platform Figure 1 .

[0042] Fig. 9 It is a schematic diagram of the three-dimensional structure of the merged and split modules.

[0043] Fig.10 This is a partial structural explosion diagram of the merged and split modules.

[0044] Fig.11 It is a structural schematic diagram of the separation of the graphite ring and the ring bracket.

[0045] Fig.12 Schematic diagram of the local structure when the graphite ring is separated from the graphite disk.

[0046] Fig.13 This is a three-dimensional image of the wafer and graphite ring when separated.

[0047] 01. Wafer; 02. Graphite ring;

[0048] 021, disc receiving groove; 022, sheet receiving groove; 03, graphite disc;

[0049] 1. Merge and split modules;

[0050] 11. bottom frame; 111. movable opening; 12. ring bracket; 121. supporting ring opening;

[0051] 13. Pallet; 14. Lifting mechanism; 15. Disassembly and assembly drive mechanism;

[0052] 16. Disassemble and assemble the ring light source; 17. Surface light source; 18. Collection equipment;

[0053] 2. Loading box; 3. Manipulator; 4. Edge finder; 5. Ring placement box;

[0054] 6. Laser sensor;

[0055] 7. Correction platform;

[0056] 71. Deviation correction platform; 72. Deviation correction driving mechanism;

[0057] 73. Deviation-correcting ring light source; 74. Deviation-correcting collector. DETAILED DESCRIPTION

[0058] To facilitate understanding by those skilled in the art, the present invention is further described below in conjunction with examples and drawings. Specific implementation methods of the present invention will be described below. It should be pointed out that in the specific description of these implementation methods, in order to provide a concise description, this specification cannot provide a detailed description of all features of the actual implementation methods.

[0059] refer to Figures 1 to 13 As shown, the present invention provides a SiC epitaxial merging detection method, comprising the following steps:

[0060] S01, using the merging and splitting module 1, the edge finder 4 and the correction platform 7 to independently complete the edge finding and correction of the graphite ring 02, the wafer 01 and the graphite disk 03, respectively, using the laser sensor 6 to detect whether the merging and splitting module 1 has the wafer 01 placed, when it is detected that the merging and splitting module 1 has not placed the wafer 01, the robot 3 is used to place the wafer 01 on the merging and splitting module 1, so that the center position and the hypotenuse direction of the wafer 01 and the graphite ring 02 are consistent;

[0061] S02, using the merging and splitting module 1 to merge the wafer 01 and the graphite ring 02, and using the laser sensor 6 to detect whether the merging and splitting module 1 has the graphite disk 03 placed therein;

[0062] S03, when it is detected that the merging and splitting module 1 does not have the graphite disk 03, the manipulator 3 is used to place the graphite disk 03 in the merging and splitting module 1, so that the center position and the hypotenuse direction of the graphite disk 03 and the graphite ring 02 are consistent, and the laser sensor 6 is used to detect the flatness error between the graphite ring 02 and the graphite disk 03;

[0063] S04. When the flatness error between the graphite ring 02 and the graphite disk 03 is within the specified range, the merging and splitting module 1 is used to merge the graphite ring 02 and the graphite disk 03. The collection device 18 is used to detect whether the wafer 01 has fragments. If the wafer 01 has no fragments, the merged wafer 01, graphite ring 02 and graphite disk 03 are placed in an epitaxial growth environment.

[0064] In actual application, the manipulator 3 is a four-axis robot, and the manipulator 3 is provided with a suction arm. The manipulator 3 is used to grab or place the wafer 01, the graphite ring 02 or the graphite disk 03, and the edge finder 4 is used to find the edge and correct the wafer 01, and adjust the position and angle of the wafer 01; when the wafer 01, the graphite ring 02 and the graphite disk 03 are combined, the manipulator 3 grabs or places the graphite disk 03 to realize the overall transfer of the wafer 01, the graphite ring 02 and the graphite disk 03; when the wafer 01 and the graphite ring 02 are combined, the manipulator 3 grabs or places the graphite ring 02 to realize the wafer 01 and The graphite ring 02 is transferred as a whole; when the graphite ring 02 and the graphite disk 03 are merged, the manipulator 3 grabs or places the graphite disk 03 to realize the transfer of the graphite ring 02 and the graphite disk 03 as a whole; after the center position and the bevel direction of the wafer 01 are determined by the edge finder 4, they will no longer be adjusted by the correction platform 7, the merging and splitting module 1 or the manipulator 3 for the second time. The correction platform 7 and the merging and splitting module 1 also use independent edge finding for the positioning and edge finding of the respective graphite disk 03 and the graphite ring 02. Through the merging and splitting module 1, the edge finder 4 and the correction platform 7, the graphite ring 02 and the wafer 01 can be independently positioned. Or graphite disk 03 for edge finding and deviation correction, the manipulator 3 can complete the transfer of wafer 01, graphite ring 02 or graphite disk 03 by fixed grabbing or placing action, improve the positioning accuracy of wafer 01, effectively eliminate the positioning error in the installation of wafer 01, and facilitate the merging and splitting module 1 to quickly complete the splitting and merging action between graphite ring 02 and wafer 01 or graphite disk 03, which is conducive to smoothly placing the merged wafer 01, graphite ring 02 and graphite disk 03 into the epitaxial growth environment, ensuring the processing quality of wafer 01; the laser sensor 6 is set to detect the wafer 01 and graphite ring 02. Or whether the graphite disk 03 is accurately placed in the corresponding position, improving the accuracy of material placement, the laser sensor 6 can also detect the flatness error between the graphite ring 02 and the graphite disk 03, ensuring that the flatness between the graphite ring 02 and the graphite disk 03 is within a reasonable range, realizing automatic detection, effectively saving labor, and reducing positioning errors caused by human factors; by setting up the acquisition equipment 18 to detect whether the wafer 01 has fragments, unqualified wafers 01 are removed in time, ensuring the structural stability of the wafer 01, realizing automatic detection, effectively saving labor, and reducing positioning errors caused by human factors.

[0065] refer to Figure 1 As shown, in this embodiment, in step S01, a disk ring placement box 5 for storing a combination of graphite rings 02 and graphite disks 03 is provided, referring to Figure 4 , 10As shown, the merging and splitting module 1 includes a base frame 11, a plurality of ring brackets 12 connected to the top of the base frame 11, a tray 13 and a lifting mechanism 14, the ring brackets 12 are distributed around the base frame 11, the lifting mechanism 14 is drivingly connected to the tray 13, the base frame 11 is penetrated by a movable opening 111 from top to bottom, the output end of the lifting mechanism 14 is penetrated by the movable opening 111, and the lifting mechanism 14 drives the tray 13 to move up and down, so that the tray 13 moves up and down inside the ring bracket 12.

[0066] refer to Figure 4 As shown, in actual application, when it is necessary to find the edge of the graphite disk 03, the lifting mechanism 14 drives the tray 13 to move upward to the required height, and the manipulator 3 transfers the combination of the graphite disk 03 and the graphite ring 02 from the disk-ring placement box 5 to the merging and splitting module 1, and the graphite ring 02 and the graphite disk 03 are supported by the ring bracket 12 and the tray 13 respectively. The lifting mechanism 14 drives the tray 13 to move downward, so that the graphite disk 03 moves downward synchronously with the tray 13 to separate from the graphite ring 02, so as to separate the graphite disk 03 from the merging and splitting module 1, and the manipulator 3 transfers the separated graphite disk 03 to the correction platform 7, and the correction platform 7 is provided with a third positioning reference. 7 The graphite disk 03 is positioned and edge-finded according to the third positioning reference to determine the position and angle of the graphite disk 03, so as to stably realize the edge-finding and deviation-correction of the graphite disk 03; specifically, the third positioning reference has been determined by the deviation-correction platform 7 during the debugging process. After the deviation-correction platform 7 finds the edge of the graphite disk 03, the position and angle information of the graphite disk 03 is not transmitted to the manipulator 3, the edge finder 4 or the merging and splitting module 1. The manipulator 3 can realize the taking and placing of the graphite disk 03 by using a fixed grasping or placing action, and smoothly realize the individual edge-finding of the graphite disk 03, saving a lot of reference calibration time between the edge finder 4, the deviation-correction platform 7 and the merging and splitting module 1, reducing the calculation complexity of the equipment, and effectively improving the positioning efficiency of the graphite disk 03.

[0067] refer to Fig. 9 As shown, in this embodiment, the merging and splitting module 1 also includes a merging and splitting driving mechanism 15, a merging and splitting ring light source 16, a surface light source 17 and a collection device 18. The merging and splitting driving mechanism 15 is used to drive the base frame 11 to move along the X-axis and the Y-axis, and to make the base frame 11 rotate. The merging and splitting ring light source 16 is located between the base frame 11 and the surface light source 17. The front end of the collection device 18 passes through the surface light source 17 and corresponds to the merging and splitting ring light source 16. The collection device 18 is provided with a second positioning reference. The merging and splitting driving mechanism 15 is connected to the collection device 18. The collection device 18 transmits the position and angle information of the graphite ring 02 to the merging and splitting driving mechanism 15.

[0068] refer to Figure 6As shown, in actual application, when the graphite ring 02 is edge-finding and deflection-correcting, the laser sensor 6 is used to detect whether the ring bracket 12 has the wafer 01 placed thereon. When it is detected that the ring bracket 12 does not have the wafer 01 placed thereon, the manipulator 3 is used to place the wafer 01 after edge-finding on the ring bracket 12, so as to facilitate the smooth placement of the wafer 01. The ring bracket 12 supports the graphite ring 02, and the surface light source 17 and the detachable annular light source 16 are used to supplement the light for the graphite ring 02 and the acquisition device 18. The acquisition device 18 visually takes pictures to determine the position and angle of the graphite ring 02. The detachable driving mechanism 15 drives the ring bracket 12 to move along the X-axis and / or the Y-axis through the base frame 11, and causes the ring bracket 12 to rotate, so that the graphite ring 02 moves according to the second fixed The positioning reference determines its own position and angle to achieve precise positioning of the graphite ring 02; specifically, the second positioning reference is determined by the acquisition device 18 during the debugging process. After the merging and splitting module 1 completes the edge finding of the graphite ring 02, the position and angle information of the graphite ring 02 is determined, and the position and angle information of the graphite ring 02 is not transmitted to the manipulator 3, the edge finder 4 or the correction platform 7. The manipulator 3 uses a fixed grasping or placing action to realize the picking and placing of the graphite ring 02, and successfully realizes the individual edge finding of the graphite ring 02, saving a lot of reference calibration time between the edge finder 4, the correction platform 7 and the merging and splitting module 1, reducing the equipment calculation complexity, and effectively improving the positioning efficiency of the graphite ring 02.

[0069] In this embodiment, the edge finder 4 is provided with a first positioning reference, and the edge finder 4 determines the position and angle of the wafer 01 according to the first positioning reference. Specifically, the first positioning reference has been determined by the edge finder 4 during the debugging process. After the edge finder 4 completes edge finding for the wafer 01, the position and angle information of the wafer 01 is not transmitted to the robot 3, the merging and splitting module 1 or the correction platform 7. The robot 3 adopts a fixed grasping or placing action to realize the placement of the wafer 01, and smoothly realizes the separate edge finding of the wafer 01, saving a large number of edge finders 4, correction platforms 7, The reference calibration time between the robot 3 and the merging and splitting module 1 reduces the calculation complexity of the equipment and effectively improves the positioning efficiency of the wafer 01. In actual application, when the wafer 01 needs to be placed on the merging and splitting module 1, the graphite ring 02 determines its own position and angle according to the second positioning reference, and the lifting mechanism 14 drives the tray 13 to move upward to the required height on the inner side of the graphite ring 02. The robot 3 places the wafer 01 on the tray 13 so that the center position and hypotenuse direction of the wafer 01 and the graphite ring 02 are consistent, which is convenient for quickly placing the wafer 01.

[0070] refer to Figure 5As shown, in this embodiment, in step S02; when it is necessary to merge the wafer 01 and the graphite ring 02, the graphite ring 02 determines its own position and angle according to the second positioning reference, the lifting mechanism 14 drives the tray 13 to move upward to the required height on the inner side of the graphite ring 02, and the robot 3 places the wafer 01 on the tray 13 so that the center position and the hypotenuse direction of the wafer 01 and the graphite ring 02 are consistent, and the lifting mechanism 14 drives the tray 13 and the wafer 01 to descend synchronously until the wafer 01 is supported by the graphite ring 02, thereby realizing the merging of the wafer 01 and the graphite ring 02, facilitating the rapid merging of the wafer 01 and the graphite ring 02, and improving the positioning accuracy of the wafer 01.

[0071] refer to Figure 6 As shown, when the laser sensor 6 detects whether the merging and splitting module 1 has the graphite disk 03 placed, the laser sensor 6 collects data from the placement space of the graphite disk 03 in the merging and splitting module 1. When the graphite disk 03 is not placed in the placement space, the data collected by the laser sensor 6 exceeds the predetermined range, which means that the merging and splitting module 1 does not have the graphite disk 03 placed. This realizes automatic detection of whether the merging and splitting module 1 has the graphite disk 03 placed, effectively saves labor, reduces positioning errors caused by labor, and facilitates rapid placement of the graphite disk 03 into the merging and splitting module 1.

[0072] refer to Figure 6As shown, in this embodiment, in steps S03 and S04, the laser sensor 6 obtains data from at least three acquisition points on the graphite ring 02 or the graphite disk 03, respectively, and fits at least three points on the graphite disk 03 to form a disk ring plane, and calculates whether the vertical distance from each acquisition point on the graphite ring 02 to the disk ring plane is within a predetermined range, so as to determine the flatness error between the graphite ring 02 and the graphite disk 03; in actual application, the predetermined range refers to the maximum value minus the minimum value of the acquisition data is less than or equal to 0.02m m, which is conducive to accurately detecting the combined flatness of the graphite ring 02 and the graphite disk 03, and ensuring that the graphite ring 02 is smoothly placed on the graphite disk 03; when it is necessary to merge the graphite ring 02 with the graphite disk 03, merge the wafer 01 with the graphite ring 02, and the graphite disk 03 determines its own position and angle according to the third positioning reference. Specifically, since the wafer 01 and the graphite ring 02 have been merged, the center position and angle of the wafer 01 and the graphite ring 02 have overlapped, and the graphite disk 03 determines its own position and angle according to the third positioning reference. When the graphite disk 03 is placed on the tray 13, the lifting mechanism 14 drives the tray 13 to descend to the required height until the manipulator 3 places the graphite disk 03 on the tray 13. At this time, it is possible to ensure that the center position and angle of the graphite disk 03 and the graphite ring 02 coincide with each other. The positioning deviation between the graphite disk 03 and the graphite ring 02 can be accurately compensated by only driving the tray 13 to support the graphite disk 03 to move upward by the lifting mechanism 14. Therefore, the lifting mechanism 14 drives the tray 13 to move upward until the graphite disk 03 is combined with the graphite ring 02, thereby realizing the crystallization. Circle 01, graphite ring 02 and graphite disk 03 are merged; specifically, during the whole process of movement of tray 13, the lifting mechanism 14 does not need to wait for the correction platform 7, edge finder 4 or manipulator 3 to transmit any position or angle information of wafer 01, graphite ring 02 or graphite disk 03. The lifting mechanism 14 can execute the splitting or merging action between graphite ring 02 and wafer 01 or graphite disk 03, thereby ensuring the stable execution of the splitting and merging action and facilitating the rapid merging of wafer 01, graphite ring 02 and graphite disk 03.

[0073] refer to Figure 7As shown, in this embodiment, the deflection correction platform 7 includes a deflection correction table 71, a deflection correction driving mechanism 72 connected to the deflection correction table 71, a deflection correction annular light source 73 and a deflection correction collector 74, the deflection correction driving mechanism 72 is used to drive the deflection correction table 71 to move along the X-axis and the Y-axis, and to make the deflection correction table 71 rotate, the deflection correction annular light source 73 is located between the deflection correction table 71 and the deflection correction collector 74, the deflection correction collector 74 corresponds to the deflection correction annular light source 73, the deflection correction collector 74 is provided with a third positioning reference, and the deflection correction driving mechanism 72 is electrically connected to the deflection correction collector 74; in actual During application, when the graphite disk 03 is finding its edge, the robot 3 grabs the graphite disk 03 and places it on the deflection correction table 71, and the graphite disk 03 is supported by the deflection correction table 71. The deflection correction ring light source 73 provides supplementary light for the graphite disk 03, and the deflection correction collector 74 takes visual photos to determine the position and angle of the graphite disk 03. The deflection correction drive mechanism 72 drives the deflection correction table 71 to move along the X-axis and / or Y-axis according to the data obtained by the deflection correction collector 74, and makes the deflection correction table 71 rotate, so that the graphite disk 03 determines its own position and angle according to the third positioning reference, thereby realizing the precise positioning of the graphite disk 03.

[0074] refer to Fig. 9 As shown, in this embodiment, in step S04, the acquisition device 18 acquires the surface of the wafer 01. When cracks or fragments exist on the surface of the wafer 01, the robot 3 takes out the merged wafer 01, graphite ring 02 and graphite disk 03 from the merging and splitting module 1; in actual application, when there are no cracks or fragments on the surface of the wafer 01, the robot 3 puts the merged wafer 01, graphite ring 02 and graphite disk 03 into the epitaxial growth environment. When cracks or fragments exist on the surface of the wafer 01, the robot 3 takes the wafer 01 away; the structural integrity of the wafer 01 is ensured, the inferior wafer 01 is picked out in time, and the processing quality is guaranteed.

[0075] refer to Fig.11 As shown, in this embodiment, the ring bracket 12 is provided with a ring support opening 121. When the ring bracket 12 supports the graphite ring 02, the bottom outer edge of the graphite ring 02 extends into the ring support opening 121, and the graphite ring 02 is supported by the ring support opening 121, which facilitates the positioning of the graphite ring 02; Fig.12 As shown, the bottom end of the graphite ring 02 is provided with an annular disk receiving groove 021. When the graphite disk 03 is combined with the graphite ring 02, the top outer edge of the graphite disk 03 extends into the disk receiving groove 021. Fig.13 As shown, the top of the graphite ring 02 is provided with an annular sheet accommodating groove 022. When the wafer 01 and the graphite ring 02 are combined, the bottom outer edge of the wafer 01 extends into the sheet accommodating groove 022, so that part of the wafer 01 is hidden in the graphite ring 02. The structure is compact, space is saved, and it is beneficial for the wafer 01 to be accurately positioned in the graphite ring 02.

[0076] refer to Figure 6 ,7 As shown in FIG. 9 , the present invention also includes a SiC epitaxial merging detection system, including a laser sensor 6, a correction collector 74 and a collection device 18; the laser sensor 6 is used to detect whether there are wafers 01, graphite rings 02 and graphite disks 03 in the merging and disassembling module 1, to ensure that the wafers 01, graphite rings 02 and graphite disks 03 can be smoothly placed into the merging and disassembling module 1; and can detect the flatness error between the graphite rings 02 and the graphite disks 03, to ensure that the graphite rings 02 and the graphite disks 03 are accurately installed.

[0077] The correction collector 74 is used to visually take pictures to determine the position and angle of the graphite disk 03, and to determine the position and angle of the graphite disk 03 based on the third positioning reference. It can correct the deviation between the center position and angle information of the graphite disk 03 and the corresponding center position and angle information in the third positioning reference, so as to accurately determine the position and angle of the graphite disk 03.

[0078] The acquisition device 18 is used for visually photographing to determine the position and angle of the graphite ring 02, and can determine the position and angle of the graphite ring 02 with the second positioning reference, and can correct the deviation between the center position and angle information of the graphite ring 02 and the corresponding center position and angle information in the second positioning reference, accurately determine the position and angle of the graphite ring 02, effectively save labor, and reduce positioning errors caused by human factors; and collect surface information of the wafer 01. When there are no cracks or fragments on the surface of the wafer 01, the robot 3 puts the merged wafer 01, graphite ring 02 and graphite disk 03 into the epitaxial growth environment, effectively saves labor, reduces positioning errors caused by human factors, ensures the structural integrity of the wafer 01, graphite ring 02 and graphite disk 03, and promptly picks out inferior wafers 01, graphite rings 02 and graphite disks 03 to ensure production efficiency.

[0079] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. Although the present invention is disclosed as a preferred embodiment as above, it is not used to limit the present invention. Any technician familiar with the profession can make some changes or modifications to equivalent embodiments of equivalent changes by using the technical contents disclosed above without departing from the scope of the technical solution of the present invention. However, any simple modification, equivalent changes and modifications made to the above embodiments according to the technology of the present invention are within the scope of the technical solution of the present invention without departing from the content of the technical solution of the present invention.

Claims

1. A SiC epitaxial merging detection method, characterized in that: The following steps are involved: S01, using a merging and splitting module (1), an edge finder (4) and a correction platform (7) to independently complete edge finding and correction for a graphite ring (02), a wafer (01) and a graphite disk (03), using a laser sensor (6) to detect whether the merging and splitting module (1) has placed a wafer (01), and when it is detected that the merging and splitting module (1) has not placed a wafer (01), using a robot (3) to place the wafer (01) on the merging and splitting module (1) so that the center position and the hypotenuse direction of the wafer (01) and the graphite ring (02) are consistent; S02, using a merging and splitting module (1) to merge the wafer (01) and the graphite ring (02), and using a laser sensor (6) to detect whether the merging and splitting module (1) has a graphite disk (03) placed thereon; S03, when it is detected that the merging and splitting module (1) does not have the graphite disk (03) placed therein, a manipulator (3) is used to place the graphite disk (03) on the merging and splitting module (1) so that the center position and the hypotenuse direction of the graphite disk (03) and the graphite ring (02) are consistent, and a laser sensor (6) is used to detect the flatness error between the graphite ring (02) and the graphite disk (03); S04. When the flatness error between the graphite ring (02) and the graphite disk (03) is within a specified range, the graphite ring (02) and the graphite disk (03) are merged using a merging and splitting module (1), and a collection device (18) is used to detect whether the wafer (01) has fragments. If the wafer (01) has no fragments, the merged wafer (01), the graphite ring (02) and the graphite disk (03) are placed in an epitaxial growth environment.

2. The SiC epitaxial merging detection method according to claim 1, characterized in that: In step S01, a disk-ring placement box (5) for storing a combination of graphite rings (02) and graphite disks (03) is provided, the merging and splitting module (1) comprises a base frame (11), a plurality of ring brackets (12) connected to the top of the base frame (11), a tray (13) and a lifting mechanism (14), the ring brackets (12) are distributed around the base frame (11), the lifting mechanism (14) is drivingly connected to the tray (13), the base frame (11) is penetrated by a movable opening (111) at the top and bottom, the output end of the lifting mechanism (14) is penetrated by the movable opening (111), and the lifting mechanism (14) drives the tray (13) to move up and down, so that the tray (13) moves up and down inside the ring bracket (12); When it is necessary to find the edge of the graphite disk (03), the lifting mechanism (14) drives the tray (13) to move upward to the required height, the manipulator (3) transfers the combination of the graphite disk (03) and the graphite ring (02) from the disk-ring placement box (5) to the merging and splitting module (1), the ring bracket (12) and the tray (13) respectively support the graphite ring (02) and the graphite disk (03), and the lifting mechanism (14) drives the tray (13) to move downward, so that The graphite disk (03) moves downward synchronously with the tray (13) to be separated from the graphite ring (02), so that the graphite disk (03) is separated from the merging and splitting module (1). The manipulator (3) transfers the separated graphite disk (03) to a deviation correction platform (7). The deviation correction platform (7) is provided with a third positioning reference. The deviation correction platform (7) positions and finds the edge of the graphite disk (03) according to the third positioning reference to determine the position and angle of the graphite disk (03).

3. The SiC epitaxial merging detection method according to claim 2, characterized in that: The merging and splitting module (1) further comprises a merging and splitting driving mechanism (15), a merging and splitting annular light source (16), a surface light source (17) and a collection device (18); the merging and splitting driving mechanism (15) is used to drive the base frame (11) to move along the X-axis and the Y-axis and to make the base frame (11) rotate; the merging and splitting annular light source (16) is located between the base frame (11) and the surface light source (17); the front end of the collection device (18) passes through the surface light source (17) and corresponds to the merging and splitting annular light source (16); the collection device (18) is provided with a second positioning reference; the merging and splitting driving mechanism (15) is connected to the collection device (18); the collection device (18) transmits the position and angle information of the graphite ring (02) to the merging and splitting driving mechanism (15); When the graphite ring (02) is edge-finding and deflection-correcting, a laser sensor (6) is used to detect whether the ring bracket (12) has a wafer (01) placed thereon. When it is detected that the ring bracket (12) has not a wafer (01) placed thereon, a robot (3) is used to place the wafer (01) after edge-finding on the ring bracket (12). The ring bracket (12) supports the graphite ring (02). A surface light source (17) and a detachable annular light source (16) are used to supplement light for the graphite ring (02) and a collection device (18). The collection device (18) visually photographs to determine the position and angle of the graphite ring (02). The detachable driving mechanism (15) drives the ring bracket (12) to move along the X-axis and / or the Y-axis through the base frame (11), and causes the ring bracket (12) to rotate, so that the graphite ring (02) determines its own position and angle according to a second positioning reference, thereby achieving accurate positioning of the graphite ring (02).

4. The SiC epitaxial merging detection method according to claim 3, characterized in that: The edge finder (4) is provided with a first positioning reference, and the edge finder (4) determines the position and angle of the wafer (01) according to the first positioning reference; When the wafer (01) needs to be placed on the merging and splitting module (1), the graphite ring (02) determines its own position and angle according to the second positioning reference, the lifting mechanism (14) drives the tray (13) to move upward inside the graphite ring (02) to a required height, and the robot (3) places the wafer (01) on the tray (13) so that the center position and hypotenuse direction of the wafer (01) and the graphite ring (02) are consistent.

5. The SiC epitaxial merging detection method according to claim 4, characterized in that: In step S02; When it is necessary to merge the wafer (01) and the graphite ring (02), the graphite ring (02) determines its own position and angle according to the second positioning reference, the lifting mechanism (14) drives the tray (13) to move upward to a required height inside the graphite ring (02), the robot (3) places the wafer (01) on the tray (13) so that the center positions and hypotenuse directions of the wafer (01) and the graphite ring (02) are consistent, and the lifting mechanism (14) drives the tray (13) and the wafer (01) to descend synchronously until the wafer (01) is supported by the graphite ring (02), thereby achieving the merging of the wafer (01) and the graphite ring (02); When the laser sensor (6) detects whether the merging and splitting module (1) has a graphite disk (03) placed therein, the laser sensor (6) collects data from the placement space of the graphite disk (03) in the merging and splitting module (1); when the graphite disk (03) is not placed in the placement space, the data collected by the laser sensor (6) exceeds a predetermined range, indicating that the merging and splitting module (1) has not a graphite disk (03) placed therein.

6. The SiC epitaxial merging detection method according to claim 5, characterized in that: In steps S03 and S04, the laser sensor (6) acquires data from at least three acquisition points on the graphite ring (02) or the graphite disk (03), respectively, and forms a disk ring plane by fitting at least three points on the graphite disk (03), and calculates whether the vertical distance from each acquisition point on the graphite ring (02) to the disk ring plane is within a predetermined range, so as to determine the flatness error between the graphite ring (02) and the graphite disk (03); When it is necessary to merge the graphite ring (02) with the graphite disk (03), merge the wafer (01) with the graphite ring (02), the graphite disk (03) determines its own position and angle according to the third positioning reference, the lifting mechanism (14) drives the tray (13) to descend to the required height, the manipulator (3) places the graphite disk (03) on the tray (13), and the lifting mechanism (14) drives the tray (13) to move upward until the graphite disk (03) and the graphite ring (02) are merged, thereby realizing the merger of the wafer (01), the graphite ring (02) and the graphite disk (03).

7. The SiC epitaxial merging detection method according to claim 2, characterized in that: The deflection correction platform (7) comprises a deflection correction platform (71), a deflection correction driving mechanism (72) drivingly connected to the deflection correction platform (71), a deflection correction annular light source (73) and a deflection correction collector (74); the deflection correction driving mechanism (72) is used to drive the deflection correction platform (71) to move along the X-axis and the Y-axis and to make the deflection correction platform (71) rotate; the deflection correction annular light source (73) is located between the deflection correction platform (71) and the deflection correction collector (74); the deflection correction collector (74) corresponds to the deflection correction annular light source (73); the deflection correction collector (74) is provided with a third positioning reference; and the deflection correction driving mechanism (72) is electrically connected to the deflection correction collector (74); When the graphite disk (03) is edge-finding, the robot (3) grabs the graphite disk (03) and places it on the deflection correction table (71). The graphite disk (03) is supported by the deflection correction table (71). The deflection correction ring light source (73) provides supplementary light for the graphite disk (03). The deflection correction collector (74) visually photographs to determine the position and angle of the graphite disk (03). The deflection correction drive mechanism (72) drives the deflection correction table (71) to move along the X-axis and / or the Y-axis according to the data obtained by the deflection correction collector (74), and causes the deflection correction table (71) to rotate, so that the graphite disk (03) determines its own position and angle according to the third positioning reference, thereby realizing accurate positioning of the graphite disk (03).

8. The SiC epitaxial merging detection method according to claim 1, characterized in that: In step S04, the collecting device (18) collects the surface of the wafer (01). When cracks or fragments exist on the surface of the wafer (01), the robot (3) takes out the combined wafer (01), the graphite ring (02) and the graphite disk (03) from the combining and splitting module (1); When there are no cracks or fragments on the surface of the wafer (01), the robot (3) places the combined wafer (01), the graphite ring (02) and the graphite disk (03) into an epitaxial growth environment.

9. The SiC epitaxial merging detection method according to claim 3, characterized in that: The ring bracket (12) is provided with a ring supporting opening (121), and when the ring bracket (12) supports the graphite ring (02), the bottom outer edge of the graphite ring (02) extends into the ring supporting opening (121); The bottom end of the graphite ring (02) is provided with an annular disk accommodating groove (021); when the graphite disk (03) is combined with the graphite ring (02), the top outer edge of the graphite disk (03) extends into the disk accommodating groove (021); the top end of the graphite ring (02) is provided with an annular sheet accommodating groove (022); when the wafer (01) is combined with the graphite ring (02), the bottom outer edge of the wafer (01) extends into the sheet accommodating groove (022).

10. A SiC epitaxial merging detection system, used in the SiC epitaxial merging detection method according to any one of claims 1 to 9, characterized in that: It includes a laser sensor (6), a deviation correction collector (74) and a collection device (18); The laser sensor (6) is used to detect whether there is a wafer (01), a graphite ring (02) and a graphite disk (03) in the merging and disassembling module (1), and can detect the flatness error between the graphite ring (02) and the graphite disk (03); The deviation correction collector (74) is used to visually take photos to determine the position and angle of the graphite disk (03), and to determine the position and angle of the graphite disk (03) using a third positioning reference; The acquisition device (18) is used to visually take photos to determine the position and angle of the graphite ring (02), and can determine the position and angle of the graphite ring (02) based on a second positioning reference; and to acquire surface information of the wafer (01).

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