Groove damage detection system, method, device and equipment

Abstract

The invention provides a groove damage detection system, method, device and equipment. The system comprises a bearing table, two first rollers and a second roller, the two first rollers are arranged on the bearing table, and the axes of the first rollers are parallel to the table top of the bearing table; the second roller is arranged above the first roller in the vertical direction, the second roller is parallel to the first roller and can move in the first direction and the second direction, the first direction is parallel to the table top of the bearing table, and the second direction is perpendicular to the table top of the bearing table; wherein at least one displacement sensor is arranged on the end face of the second roller, at least one pressure sensor is arranged on a first generatrix of the second roller, and the first generatrix is the generatrix closest to the first roller. According to the scheme, the problems that the damage of the silicon wafer groove is judged in a microscope observation mode, the difficulty is high, and the whole groove cannot be covered are solved.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon wafer damage detection, and in particular to a groove damage detection system, method, device and equipment. Background Art

[0002] During the silicon wafer processing, damage control has always been the focus of attention. Excessive damage will bring risks such as chip breakage. Silicon wafer damage is mainly concentrated on the surface, and the notch is particularly serious. Assessing notch damage is of great significance to evaluating the processing capability of the machine.

[0003] In the prior art, the method of microscopic observation after etching is usually used to directly observe the edge damage of the silicon wafer. However, for the Notch part, its sample preparation and microscopic observation are very difficult, and usually cannot cover the entire Notch. Summary of the invention

[0004] The embodiments of the present invention provide a groove damage detection system, method, device and equipment to solve the problem that the damage of silicon wafer grooves is difficult to determine by microscope observation in the prior art and the entire groove cannot be covered.

[0005] In order to solve the above technical problems, the present invention adopts the following technical solutions:

[0006] In a first aspect, an embodiment of the present invention provides a silicon wafer groove damage detection system, comprising:

[0007] A bearing platform, two first rollers, and a second roller;

[0008] The two first rollers are arranged on the bearing platform, and the axes of the first rollers are parallel to the surface of the bearing platform;

[0009] The second roller is arranged above the first roller in a vertical direction, the second roller is parallel to the first roller, and can move along a first direction and a second direction, the first direction is a direction parallel to the table surface of the supporting platform, and the second direction is perpendicular to the table surface of the supporting platform;

[0010] Wherein, at least one displacement sensor is arranged on the end surface of the second roller, and at least one pressure sensor is arranged on the first busbar of the second roller, and the first busbar is the busbar closest to the first roller.

[0011] Furthermore, the first roller is connected to the bearing platform via a lifting rod;

[0012] The lifting rod is used to control the first roller to move along the first direction or along the second direction, and to control the first roller to rotate around the lifting rod.

[0013] Furthermore, the lifting rod is slidably connected to the bearing platform, so that the lifting rod can drive the first rolling roller to slide relative to the bearing platform.

[0014] Furthermore, the silicon wafer groove damage detection system further includes: a locking unit;

[0015] The locking unit is used to limit the position of the lifting rod so that the lifting rod is fixed on the bearing platform.

[0016] In a second aspect, an embodiment of the present invention provides a method for detecting groove damage of a silicon wafer, which is applied to the groove damage detection system of the silicon wafer as described above, comprising:

[0017] Placing the silicon wafer on two first rollers, wherein the two first rollers are symmetrical with respect to a first straight line, and the first straight line passes through the center of the groove and the center of the silicon wafer;

[0018] Controlling the second roller to move and approach the silicon wafer so that the orthographic projection of the axis of the second roller on the silicon wafer passes through the center of the silicon wafer;

[0019] When the second roller contacts the silicon wafer, performing a zeroing process on the displacement sensor on the second roller;

[0020] Controlling the second roller to press the silicon wafer downward in a vertical direction at a preset speed until the silicon wafer breaks;

[0021] Acquire the target displacement of the silicon wafer in the vertical direction acquired by the displacement sensor and the target pressure acquired by the pressure sensor when the silicon wafer is broken;

[0022] The damage degree of the groove of the silicon wafer is determined according to the target displacement and the crack position of the silicon wafer.

[0023] Furthermore, the method further comprises:

[0024] When the pressure collected by the pressure sensor is greater than zero and less than a preset pressure, it is confirmed that the second roller contacts the silicon wafer.

[0025] Furthermore, before controlling the second roller to press down the silicon wafer at a preset speed in the vertical direction, the method further comprises:

[0026] The first rollers are controlled to move so that the distance between the two first rollers is smaller than the radius of the silicon wafer.

[0027] Further, determining the damage degree of the groove of the silicon wafer according to the target displacement and the crack position of the silicon wafer includes:

[0028] According to the size parameters of the silicon wafer, the relative positions of the first roller and the second roller, and the preset speed, a finite element simulation calculation is performed on the damage depth of the groove of the silicon wafer to obtain a first corresponding relationship and a second corresponding relationship; the first corresponding relationship is a corresponding relationship between the target displacement and the target pressure; the second corresponding relationship is a corresponding relationship between the target displacement and the damage depth of the groove of the silicon wafer;

[0029] The damage degree of the groove of the silicon wafer is obtained according to the target displacement, the crack position of the silicon wafer, the first corresponding relationship, and the second corresponding relationship.

[0030] In a third aspect, an embodiment of the present invention provides a silicon wafer groove damage detection device, comprising:

[0031] An adjustment module, used for placing the silicon wafer on two first rollers, the two first rollers are symmetrical with respect to a first straight line, and the first straight line passes through the center of the groove and the center of the silicon wafer;

[0032] A first control module is used to control the second roller to move and approach the silicon wafer so that the orthographic projection of the axis of the second roller on the silicon wafer passes through the center of the silicon wafer;

[0033] A processing module, used for performing a zeroing process on the displacement sensor on the second roller when the second roller contacts the silicon wafer;

[0034] A second control module, used for controlling the second roller to press the silicon wafer downward at a preset speed in a vertical direction until the silicon wafer is broken;

[0035] an acquisition module, used to acquire a target displacement of the silicon wafer in a vertical direction acquired by the displacement sensor and a target pressure acquired by the pressure sensor when the silicon wafer is broken;

[0036] A determination module is used to determine the damage degree of the groove of the silicon wafer according to the target displacement and the crack position of the silicon wafer.

[0037] In a fourth aspect, an embodiment of the present invention provides a groove damage detection device, comprising: a transceiver, a memory, a processor, and a computer program stored in the memory and executable on the processor; when the processor executes the computer program, the steps of the groove damage detection method as described above are implemented.

[0038] The beneficial effects of the present invention are:

[0039] The groove damage detection system, method, device and equipment of the silicon wafer of the embodiment of the present invention can detect the groove damage of the silicon wafer by using the three-point bending method through the first roller and the second roller; the first roller and the second roller can apply pressure to the silicon wafer to be detected; and then the displacement sensor set on the second roller collects the target displacement in the vertical direction generated when the silicon wafer breaks, so as to determine the damage degree of the silicon wafer groove according to the target displacement. The groove damage detection system of the embodiment of the present invention solves the problem that the damage of the silicon wafer groove is difficult to judge by microscopic observation in the prior art and cannot cover the entire groove. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 A schematic diagram showing the structure of a silicon wafer groove damage detection system according to an embodiment of the present invention;

[0041] Figure 2 A schematic diagram showing the steps of a method for detecting groove damage in a silicon wafer according to an embodiment of the present invention;

[0042] Figure 3 A simplified schematic diagram of a silicon wafer during a finite element simulation process of an embodiment of the present invention is shown;

[0043] Figure 4 A stress cloud diagram showing a silicon wafer according to an embodiment of the present invention;

[0044] Figure 5 A schematic diagram showing the corresponding relationship between stress and displacement of a silicon wafer with a groove direction of 100 according to an embodiment of the present invention;

[0045] Figure 6 A schematic diagram showing the corresponding relationship between stress and displacement of a silicon wafer with a groove direction of 110 according to an embodiment of the present invention;

[0046] Figure 7 A schematic diagram showing the corresponding relationship between the displacement of a silicon wafer with a groove direction of 100 and the groove damage depth according to an embodiment of the present invention;

[0047] Figure 8 A schematic diagram showing the corresponding relationship between the displacement of a silicon wafer with a groove direction of 110 and the groove damage depth according to an embodiment of the present invention;

[0048] Fig. 9 A schematic diagram of a module of a device for detecting groove damage in a silicon wafer according to an embodiment of the present invention. DETAILED DESCRIPTION

[0049] In order to make the technical problems, technical solutions and advantages to be solved by the present invention clearer, the following will be described in detail in conjunction with the accompanying drawings and specific embodiments. In the following description, specific details such as specific configurations and components are provided only to help fully understand the embodiments of the present invention. Therefore, it should be clear to those skilled in the art that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of the present invention. In addition, for clarity and brevity, the description of known functions and structures is omitted.

[0050] It should be understood that the references to "one embodiment" or "an embodiment" throughout the specification mean that the specific features, structures, or characteristics associated with the embodiment are included in at least one embodiment of the present invention. Therefore, the references to "in one embodiment" or "in an embodiment" appearing throughout the specification do not necessarily refer to the same embodiment. In addition, these specific features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0051] The present invention aims to solve the problem that it is difficult to judge the damage of silicon wafer grooves by microscope observation in the prior art and the entire groove cannot be covered. The present invention provides a groove damage detection system, method, device and equipment.

[0052] like Figure 1 As shown, an embodiment of the present application provides a silicon wafer groove damage detection system, comprising:

[0053] A bearing platform 1, two first rollers 2, and a second roller 3;

[0054] The two first rollers 2 are arranged on the supporting platform 1, and the axes of the first rollers 2 are parallel to the surface of the supporting platform 1;

[0055] The second roller 3 is arranged above the first roller 2 in the vertical direction, the second roller 3 is parallel to the first roller 2, and can move along a first direction and a second direction, the first direction is a direction parallel to the table surface of the carrying platform 1, and the second direction is perpendicular to the table surface of the carrying platform 1;

[0056] The end surface of the second roller 3 is provided with at least one displacement sensor, and the first busbar of the second roller 3 is provided with at least one pressure sensor, and the first busbar is the busbar closest to the first roller 2 .

[0057] It should be noted that the first roller and the second roller are both cylindrical roller shafts.

[0058] Optionally, the displacement sensor is used to detect the displacement of the second roller in the vertical direction, so as to determine the deformation amount of the silicon wafer;

[0059] The pressure sensor is used to detect the pressure applied by the second roller to the silicon wafer.

[0060] The groove damage detection system for silicon wafers in the embodiment of the present invention can detect the groove damage of silicon wafers by using the three-point bending method through the first roller and the second roller; the first roller and the second roller can apply pressure to the silicon wafer to be detected; and then the displacement sensor set on the second roller collects the target displacement in the vertical direction generated when the silicon wafer breaks, so as to determine the damage degree of the groove of the silicon wafer according to the target displacement. The groove damage detection system in the embodiment of the present invention solves the problem that the damage of the silicon wafer groove is difficult to judge by microscope observation in the prior art and cannot cover the entire groove.

[0061] The three-point bending method is to fix the two first rollers, place the silicon wafer on the two first rollers, and apply pressure to the silicon wafer at a constant speed through the second roller. During the pressure application process, the load (pressure) gradually increases, so that the silicon wafer generates the maximum bending stress at the central loading point; as the load increases, the silicon wafer gradually deforms until it breaks or reaches the elastic limit of the material. By recording the data of multiple groups of tests, the relationship curve between the applied load and the deformation amount is determined to analyze the mechanical properties of the silicon wafer.

[0062] Optionally, the first roller 2 is connected to the bearing platform 1 via a lifting rod 4;

[0063] The lifting rod 4 is used to control the first roller 2 to move along the first direction or along the second direction, and to control the first roller 2 to rotate around the lifting rod 4 .

[0064] Optionally, the lifting rod is a motor-driven lifting rod or a hydraulically-driven lifting rod.

[0065] It should be noted that for silicon wafers of different sizes or thicknesses, the vertical displacement when the silicon wafer breaks is different, and the distance between the first rolling roller and the supporting platform needs to be adjusted to ensure the smooth implementation of the three-point bending method.

[0066] The groove damage detection system for silicon wafers in the embodiment of the present invention can flexibly adjust the distance between the first roller and the supporting platform by setting the lifting rod, so as to adapt to the groove damage detection of silicon wafers with different thicknesses.

[0067] Optionally, the lifting rod 4 is slidably connected to the bearing platform 1 , so that the lifting rod 4 can drive the first rolling roller 2 to slide relative to the bearing platform 1 .

[0068] It should be noted that the distance between the two first rollers needs to be determined according to the diameter of the silicon wafer; generally, the distance between the two first rollers is smaller than the radius of the silicon wafer.

[0069] Optionally, according to the size of the silicon wafer, the distance between the two first rollers is adjusted by sliding the lifting rod along the supporting platform; and the first roller is controlled to rotate by the lifting rod so that the first roller and the second roller are parallel.

[0070] The groove damage detection system for silicon wafers in the embodiment of the present invention can flexibly adjust the distance between the two first rollers by setting the lifting rod, thereby adapting to the groove damage detection of silicon wafers of different sizes.

[0071] Optionally, the silicon wafer groove damage detection system further includes: a locking unit;

[0072] The locking unit is used to limit the position of the lifting rod so that the lifting rod is fixed on the bearing platform.

[0073] Optionally, a slide rail is provided on the bearing platform, and the lifting rod is connected to the bearing platform via the slide rail;

[0074] The locking unit is a buckle, and when the distance between the two first rollers is adjusted to a suitable distance, the first rollers are fixed to the supporting platform through the buckle.

[0075] like Figure 2 As shown, an embodiment of the present invention also provides a method for detecting groove damage of a silicon wafer, which is applied to the groove damage detection system of the silicon wafer as described above, and includes the following steps:

[0076] Step 201, placing a silicon wafer on two first rollers, wherein the two first rollers are symmetrical with respect to a first straight line, and the first straight line passes through the center of the groove and the center of the silicon wafer;

[0077] Step 202, controlling the second roller to move and approach the silicon wafer so that the orthographic projection of the axis of the second roller on the silicon wafer passes through the center of the silicon wafer;

[0078] Step 203, when the second roller contacts the silicon wafer, performing zeroing processing on the displacement sensor on the second roller;

[0079] Step 204, controlling the second roller to press the silicon wafer downward in a vertical direction at a preset speed until the silicon wafer is broken;

[0080] Step 205, obtaining the target displacement of the silicon wafer in the vertical direction acquired by the displacement sensor and the target pressure acquired by the pressure sensor when the silicon wafer is broken;

[0081] Step 206 : determining the damage degree of the groove of the silicon wafer according to the target displacement and the crack position of the silicon wafer.

[0082] Optionally, the method further comprises:

[0083] After placing the silicon wafer on the two first rollers, the placement position of the silicon wafer is adjusted so that the two first rollers are symmetrical with respect to the first straight line.

[0084] Optionally, the method further comprises:

[0085] After placing the silicon wafer on the two first rollers, the angles of the two first rollers are adjusted so that the two first rollers are symmetrical with respect to the first straight line.

[0086] It should be noted that, for silicon wafers with the same thickness and the same groove size, if the groove has no damage, the target displacement is within the same range;

[0087] That is, after testing a silicon wafer of a specific specification, if the target displacement is not within the interval, the groove of the silicon wafer is damaged.

[0088] In the embodiment of the present invention, if the target displacement is less than a first threshold value, the rupture of the silicon wafer is a cracking, and the rupture position is at the groove, then the groove of the silicon wafer has obvious damage;

[0089] If the target displacement is greater than or equal to the first threshold and less than the second threshold, the rupture of the silicon wafer is a cracking and the rupture position is at the groove, then the groove of the silicon wafer has obvious damage;

[0090] If the target displacement is greater than or equal to the second threshold, no matter where the rupture position is, it is determined that no obvious damage occurs to the groove of the silicon wafer.

[0091] The groove damage detection method of the silicon wafer of the embodiment of the present invention applies pressure to the silicon wafer to be detected by the first roller and the second roller, thereby realizing the three-point bending method to detect the groove damage of the silicon wafer; the displacement sensor set on the second roller collects the target displacement in the vertical direction generated when the silicon wafer is broken, so as to determine the damage degree of the silicon wafer groove according to the target displacement. The groove damage detection method of the embodiment of the present invention solves the problem that the damage of the silicon wafer groove is difficult to judge by microscope observation in the prior art and cannot cover the entire groove.

[0092] Optionally, before controlling the second roller to press down the silicon wafer at a preset speed in a vertical direction, the method further comprises:

[0093] The first rollers are controlled to move so that the distance between the two first rollers is smaller than the radius of the silicon wafer.

[0094] In the embodiment of the present invention, the diameter of the silicon wafer is 300 mm, the distance between the two first rollers is 100 mm, and the preset speed is 1 mm / min.

[0095] The groove damage detection system for silicon wafers in the embodiment of the present invention can concentrate the load applied by the second roller on the groove by setting the distance between the two first rollers to be smaller than the radius of the silicon wafer, thereby better realizing the detection of the silicon wafer.

[0096] Optionally, the method further comprises:

[0097] When the pressure collected by the pressure sensor is greater than zero and less than a preset pressure, it is confirmed that the second roller contacts the silicon wafer.

[0098] It should be noted that the contact between the second roller and the silicon wafer can be understood as the second roller contacts the silicon wafer but applies almost no pressure to the silicon wafer; however, since the pressure collected by the pressure sensor is zero, it is impossible to determine whether the second roller contacts the silicon wafer; therefore, a smaller pressure value is used to determine whether the second roller contacts the silicon wafer.

[0099] In the embodiment of the present invention, the preset pressure is 0.2N.

[0100] The groove damage detection system for silicon wafers in the embodiment of the present invention can determine whether the second rolling roller contacts the silicon wafer through the preset pressure, thereby accurately determining the deformation amount generated when the silicon wafer breaks, thereby improving the accuracy of groove damage detection for the silicon wafer.

[0101] Optionally, determining the damage degree of the groove of the silicon wafer according to the target displacement and the crack position of the silicon wafer includes:

[0102] According to the size parameters of the silicon wafer, the relative positions of the first roller and the second roller, and the preset speed, a finite element simulation calculation is performed on the damage depth of the groove of the silicon wafer to obtain a first corresponding relationship and a second corresponding relationship; the first corresponding relationship is a corresponding relationship between the target displacement and the target pressure; the second corresponding relationship is a corresponding relationship between the target displacement and the damage depth of the groove of the silicon wafer;

[0103] The damage degree of the groove of the silicon wafer is obtained according to the target displacement, the crack position of the silicon wafer, the first corresponding relationship, and the second corresponding relationship.

[0104] It should be noted that the relevant standards of the three-point bending method recommend the use of rectangular or cylindrical samples for the test. For a sample with a singular shape, it is difficult to analytically give the stress distribution of each part. Therefore, the finite element analysis method is used to simulate the three-point bending to determine the point with the largest stress distribution on the silicon wafer.

[0105] In the embodiment of the present invention, Figure 3 As shown, it is a circle with a diameter of 300mm. Since the thickness of the silicon wafer (0.775mm) is too different from its diameter (300mm), the three-dimensional entity can be simplified to a plane and processed as a shell element in the subsequent finite element processing. There are also three straight lines L6, L8, and L10 in the figure, which represent the positions of the three rollers respectively;

[0106] After building the model of the silicon wafer, in order to ensure the simulation accuracy, the mesh size was set to 0.5mm during the meshing process. The final mesh size was 323056 nodes and 322137 2D units. Shell units were used in the finite element simulation, and the thickness real constant was set to 0.775mm. Since single crystal silicon is a brittle material at room temperature, the failure form under three-point bending load is usually brittle fracture in the elastic stage; therefore, the physical model of the finite element model is simple enough, mainly linear elastic mechanics, and the mathematical expression of its generalized Hooke's law is as follows:

[0107]

[0108] Among them, C 11 Represents the elastic modulus along the main crystal axis; C 12 represents the coupling term between normal stress and normal strain; C 44 It represents the shear modulus, which is the relationship between shear stress and shear strain.

[0109] For single crystal silicon, C 11 , C 12 , C 44 The three constants are: 165GPa, 64GPa, 80GPa. The specific form of generalized Hooke's law is:

[0110]

[0111] Although the finite element simulation of three-point bending belongs to transient dynamics, our load is a displacement load with a constant rate ( Figure 3The Z-direction velocity applied to the groove Node near L8 is 0.01666 mm / s, which is approximately 1 mm / min and is similar to the actual test);

[0112] For the loads solved by finite element, one is the Z displacement on L8 mentioned above, and the other is the fixed constraint of the Z displacement in L6 and L10;

[0113] In order to obtain as much simulation data as possible, the total simulation time was set to 1000s and the time step was set to 1s;

[0114] In post-processing, since single crystal silicon wafers are brittle materials, the first strength theory is generally used for failure assessment; Figure 4 Display the distribution cloud diagram of the first principal stress at 200s;

[0115] By extracting the first principal stress of the Notch part at each moment, the change of the first principal stress with time (displacement) can be obtained; and the change of the crack depth with displacement;

[0116] like Figure 5 and Figure 6 , respectively, are schematic diagrams of the corresponding relationship between stress and displacement of a silicon wafer with a groove direction of 100, and a schematic diagram of the corresponding relationship between stress and displacement of a silicon wafer with a groove direction of 110;

[0117] like Figure 7 and Figure 8 , respectively, are schematic diagrams of the corresponding relationship between the displacement of a silicon wafer with a groove direction of 100 and the groove damage depth, and schematic diagrams of the corresponding relationship between the displacement of a silicon wafer with a groove direction of 110 and the groove damage depth.

[0118] In the embodiment of the present invention, a three-point bending test was performed on a single crystal silicon wafer with a notch direction of 110 after wire cutting. The silicon wafer had significant damage and finally cracked along the Notch. The displacement during cracking was 5.23mm. Therefore, it was determined that there was obvious Notch damage. Figure 8 The maximum crack depth was read to be approximately 0.0475 mm.

[0119] like Fig. 9 The embodiment of the present invention further provides a silicon wafer groove damage detection device 900, comprising:

[0120] An adjustment module 901 is used to place the silicon wafer on two first rollers, the two first rollers are symmetrical with respect to a first straight line, and the first straight line passes through the center of the groove and the center of the silicon wafer;

[0121] A first control module 902 is used to control the second roller to move and approach the silicon wafer so that the orthographic projection of the axis of the second roller on the silicon wafer passes through the center of the silicon wafer;

[0122] A processing module 903, configured to perform zeroing processing on a displacement sensor on the second roller when the second roller contacts the silicon wafer;

[0123] A second control module 904 is used to control the second roller to press the silicon wafer downward at a preset speed in a vertical direction until the silicon wafer is broken;

[0124] An acquisition module 905 is used to acquire a target displacement of the silicon wafer in a vertical direction acquired by the displacement sensor and a target pressure acquired by the pressure sensor when the silicon wafer is broken;

[0125] The determination module 906 is used to determine the damage degree of the groove of the silicon wafer according to the target displacement and the crack position of the silicon wafer.

[0126] The groove damage detection device for silicon wafers in the embodiment of the present invention applies pressure to the silicon wafer to be detected by the first roller and the second roller, thereby realizing the three-point bending method to detect the groove damage of the silicon wafer; the displacement sensor set on the second roller collects the target displacement in the vertical direction generated when the silicon wafer is broken, so as to determine the damage degree of the groove of the silicon wafer according to the target displacement. The groove damage detection method in the embodiment of the present invention solves the problem that the damage of the silicon wafer groove is difficult to judge by microscope observation in the prior art and cannot cover the entire groove.

[0127] In addition, a specific embodiment of the present invention further provides a computer-readable storage medium on which a computer program is stored, and when the program is executed by a processor, the steps of the above-mentioned method for detecting groove damage in a silicon wafer are implemented. The same technical effect can be achieved, and to avoid repetition, it will not be described here.

[0128] An embodiment of the present application also provides a computer program product, including computer instructions. When the computer instructions are executed by a processor, the various processes of the above-mentioned silicon wafer groove damage detection method embodiment are implemented, and the same technical effect can be achieved. To avoid repetition, they are not repeated here.

[0129] The above is a preferred embodiment of the present invention. It should be pointed out that for ordinary personnel in this technical field, several improvements and modifications can be made without departing from the principles described in the present invention. These improvements and modifications are also within the scope of protection of the present invention.

Claims

1. A silicon wafer groove damage detection system, characterized in that: include: A bearing platform, two first rollers, and a second roller; The two first rollers are arranged on the bearing platform, and the axes of the first rollers are parallel to the surface of the bearing platform; The second roller is arranged above the first roller in a vertical direction, the second roller is parallel to the first roller, and can move along a first direction and a second direction, the first direction is a direction parallel to the table surface of the supporting platform, and the second direction is perpendicular to the table surface of the supporting platform; Wherein, at least one displacement sensor is arranged on the end surface of the second roller, and at least one pressure sensor is arranged on the first busbar of the second roller, and the first busbar is the busbar closest to the first roller.

2. The silicon wafer groove damage detection system according to claim 1, characterized in that: The first roller is connected to the bearing platform via a lifting rod; The lifting rod is used to control the first roller to move along the first direction or along the second direction, and to control the first roller to rotate around the lifting rod.

3. The silicon wafer groove damage detection system according to claim 2, characterized in that: The lifting rod is slidably connected to the bearing platform, so that the lifting rod can drive the first rolling roller to slide relative to the bearing platform.

4. The silicon wafer groove damage detection system according to claim 3, characterized in that: Also includes: Locking unit; The locking unit is used to limit the position of the lifting rod so that the lifting rod is fixed on the bearing platform.

5. A method for detecting groove damage in a silicon wafer, characterized in that: A groove damage detection system for a silicon wafer as claimed in any one of claims 1 to 4, comprising: Placing the silicon wafer on two first rollers, wherein the two first rollers are symmetrical with respect to a first straight line, and the first straight line passes through the center of the groove and the center of the silicon wafer; Controlling the second roller to move and approach the silicon wafer so that the orthographic projection of the axis of the second roller on the silicon wafer passes through the center of the silicon wafer; When the second roller contacts the silicon wafer, performing a zeroing process on the displacement sensor on the second roller; Controlling the second roller to press the silicon wafer downward in a vertical direction at a preset speed until the silicon wafer breaks; Acquire the target displacement of the silicon wafer in the vertical direction acquired by the displacement sensor and the target pressure acquired by the pressure sensor when the silicon wafer is broken; The damage degree of the groove of the silicon wafer is determined according to the target displacement and the crack position of the silicon wafer.

6. The method for detecting groove damage of a silicon wafer according to claim 5, characterized in that: The method further comprises: When the pressure collected by the pressure sensor is greater than zero and less than a preset pressure, it is confirmed that the second roller contacts the silicon wafer.

7. The method for detecting groove damage of a silicon wafer according to claim 5, characterized in that: Before controlling the second roller to press down the silicon wafer at a preset speed in the vertical direction, the method further includes: The first rollers are controlled to move so that the distance between the two first rollers is smaller than the radius of the silicon wafer.

8. The method for detecting groove damage of a silicon wafer according to claim 5, characterized in that: Determining the damage degree of the groove of the silicon wafer according to the target displacement and the crack position of the silicon wafer includes: According to the size parameters of the silicon wafer, the relative positions of the first roller and the second roller, and the preset speed, a finite element simulation calculation is performed on the damage depth of the groove of the silicon wafer to obtain a first corresponding relationship and a second corresponding relationship; the first corresponding relationship is a corresponding relationship between the target displacement and the target pressure; the second corresponding relationship is a corresponding relationship between the target displacement and the damage depth of the groove of the silicon wafer; The damage degree of the groove of the silicon wafer is obtained according to the target displacement, the crack position of the silicon wafer, the first corresponding relationship, and the second corresponding relationship.

9. A silicon wafer groove damage detection device, characterized in that: include: An adjustment module, used for placing the silicon wafer on two first rollers, the two first rollers are symmetrical with respect to a first straight line, and the first straight line passes through the center of the groove and the center of the silicon wafer; A first control module is used to control the second roller to move and approach the silicon wafer so that the orthographic projection of the axis of the second roller on the silicon wafer passes through the center of the silicon wafer; A processing module, used for performing a zeroing process on the displacement sensor on the second roller when the second roller contacts the silicon wafer; A second control module, used for controlling the second roller to press the silicon wafer downward at a preset speed in a vertical direction until the silicon wafer is broken; an acquisition module, used to acquire a target displacement of the silicon wafer in a vertical direction acquired by the displacement sensor and a target pressure acquired by the pressure sensor when the silicon wafer is broken; A determination module is used to determine the damage degree of the groove of the silicon wafer according to the target displacement and the crack position of the silicon wafer.

10. A silicon wafer groove damage detection device, comprising: A transceiver, a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of a method for detecting groove damage in a silicon wafer as described in any one of claims 5 to 8 when executing the computer program.

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